[go: up one dir, main page]

WO2008111269A1 - 第１電極と第２電極とを備える半導体装置およびその製造方法 - Google Patents

第１電極と第２電極とを備える半導体装置およびその製造方法 Download PDF

Info

Publication number
WO2008111269A1
WO2008111269A1 PCT/JP2007/073033 JP2007073033W WO2008111269A1 WO 2008111269 A1 WO2008111269 A1 WO 2008111269A1 JP 2007073033 W JP2007073033 W JP 2007073033W WO 2008111269 A1 WO2008111269 A1 WO 2008111269A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
substrate
manufacturing
semiconductor device
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/073033
Other languages
English (en)
French (fr)
Inventor
Kazuhiro Fujikawa
Takashi Hoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of WO2008111269A1 publication Critical patent/WO2008111269A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

　ＩＧＢＴ（９１）は、基板（Ｓ）と、基板（Ｓ）の上面（Ｓａ）側に形成されたエミッタ電極（１７）と、基板（Ｓ）の下面（Ｓｂ）側に形成されたコレクタ電極（１５）と、エミッタ電極（１７）とコレクタ電極（１５）との間を流れる電流を制御するための制御機構（ｐ型ベース領域（７）、ｎ+不純物領域（１１）、絶縁膜（１３）、およびゲート電極（１９））とを備えている。ｎ-ドリフト領域（１）が基板（Ｓ）内に形成されている。これにより、オン抵抗を小さくすることができる。
PCT/JP2007/073033 2007-03-09 2007-11-29 第１電極と第２電極とを備える半導体装置およびその製造方法 Ceased WO2008111269A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-060525 2007-03-09
JP2007060525A JP2008226997A (ja) 2007-03-09 2007-03-09 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
WO2008111269A1 true WO2008111269A1 (ja) 2008-09-18

Family

ID=39759213

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/073033 Ceased WO2008111269A1 (ja) 2007-03-09 2007-11-29 第１電極と第２電極とを備える半導体装置およびその製造方法

Country Status (2)

Country Link
JP (1) JP2008226997A (ja)
WO (1) WO2008111269A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010131573A1 (ja) * 2009-05-11 2010-11-18 住友電気工業株式会社 絶縁ゲート型バイポーラトランジスタ
JP2015130528A (ja) * 2015-03-11 2015-07-16 住友電気工業株式会社 炭化珪素半導体装置の製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2560206A4 (en) * 2010-04-15 2016-04-13 Yoshitaka Sugawara SEMICONDUCTOR COMPONENT
JP5834801B2 (ja) * 2011-11-16 2015-12-24 住友電気工業株式会社 半導体装置の製造方法および半導体装置
JP5880311B2 (ja) * 2012-06-26 2016-03-09 住友電気工業株式会社 炭化珪素半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09321323A (ja) * 1996-03-27 1997-12-12 Fuji Electric Co Ltd 炭化けい素半導体基板とその製造方法およびその基板を用いた炭化けい素半導体素子
WO2005041305A1 (en) * 2003-10-16 2005-05-06 Cree, Inc. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09321323A (ja) * 1996-03-27 1997-12-12 Fuji Electric Co Ltd 炭化けい素半導体基板とその製造方法およびその基板を用いた炭化けい素半導体素子
WO2005041305A1 (en) * 2003-10-16 2005-05-06 Cree, Inc. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010131573A1 (ja) * 2009-05-11 2010-11-18 住友電気工業株式会社 絶縁ゲート型バイポーラトランジスタ
US8168515B2 (en) 2009-05-11 2012-05-01 Sumitomo Electric Industries, Ltd. Method for manufacturing semiconductor substrate
JP2015130528A (ja) * 2015-03-11 2015-07-16 住友電気工業株式会社 炭化珪素半導体装置の製造方法

Also Published As

Publication number Publication date
JP2008226997A (ja) 2008-09-25

Similar Documents

Publication Publication Date Title
US9029869B2 (en) Semiconductor device
WO2008020911A3 (en) High power insulated gate bipolar transistors
EP2302668A3 (en) Semiconductor device having tipless epitaxial source/drain regions
WO2008105077A1 (ja) 化合物半導体装置とその製造方法
NZ590751A (en) Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
WO2009019837A1 (ja) 炭化珪素半導体素子およびその製造方法
EP1244150A3 (en) Vertical MOSFET having a trench gate electrode and method of making the same
EP3109895A3 (en) Semiconductor device having doped epitaxial region and its methods of fabrication
EP1315212A4 (en) SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
EP1962330A3 (en) Method for manufacturing SIC semiconductor device
TW200629424A (en) Improved trenched MOSFETS with part of the device formed on a (110) crystal plane
EP1193767A3 (en) Insulated gate bipolar transistor and method of making the same
WO2008123352A1 (ja) 半導体装置
JP2002198529A5 (ja)
WO2009141678A3 (en) Mos device with integrated schottky diode in active region contact trench
WO2012120359A3 (en) Insulated-gate bipolar transistor
WO2009075200A1 (ja) 半導体装置とその製造方法、並びにトレンチゲートの製造方法
TW200518206A (en) Metal-oxide-semiconductor device formed in silicon-on-insulator
WO2009088452A8 (en) Improved sawtooth electric field drift region structure for power semiconductor devices
JP2008510294A5 (ja)
EP1965436A3 (en) Silicon carbide self-aligned epitaxial mosfet and method of manufacturing thereof
TW200607094A (en) Semiconductor device and method of manufacturing thereof
WO2008111269A1 (ja) 第１電極と第２電極とを備える半導体装置およびその製造方法
EP1571711A4 (en) LATERAL SHORT CHANNEL DMOS, MANUFACTURING METHOD AND SEMICONDUCTOR ELEMENT
JP2010267762A5 (ja)

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07832748

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07832748

Country of ref document: EP

Kind code of ref document: A1