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WO2008111269A1 - Semiconductor device having first electrode and second electrode and its manufacturing method - Google Patents

Semiconductor device having first electrode and second electrode and its manufacturing method Download PDF

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Publication number
WO2008111269A1
WO2008111269A1 PCT/JP2007/073033 JP2007073033W WO2008111269A1 WO 2008111269 A1 WO2008111269 A1 WO 2008111269A1 JP 2007073033 W JP2007073033 W JP 2007073033W WO 2008111269 A1 WO2008111269 A1 WO 2008111269A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
substrate
manufacturing
semiconductor device
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/073033
Other languages
French (fr)
Japanese (ja)
Inventor
Kazuhiro Fujikawa
Takashi Hoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of WO2008111269A1 publication Critical patent/WO2008111269A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)

Abstract

An IGBT (91) comprises a substrate (S), an emitter electrode (17) formed on the upper surface (Sa) side of the substrate (S), a collector electrode (15) formed on the lower surface (Sb) side of the substrate (S), a control mechanism (a p-type base region (7), an n+ impurity region (11), an insulating film (13), and a gate electrode (19)). An n- drift region (1) is formed in the substrate (S). This makes it possible to reduce on-resistance.
PCT/JP2007/073033 2007-03-09 2007-11-29 Semiconductor device having first electrode and second electrode and its manufacturing method Ceased WO2008111269A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-060525 2007-03-09
JP2007060525A JP2008226997A (en) 2007-03-09 2007-03-09 Semiconductor device and manufacturing method thereof

Publications (1)

Publication Number Publication Date
WO2008111269A1 true WO2008111269A1 (en) 2008-09-18

Family

ID=39759213

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/073033 Ceased WO2008111269A1 (en) 2007-03-09 2007-11-29 Semiconductor device having first electrode and second electrode and its manufacturing method

Country Status (2)

Country Link
JP (1) JP2008226997A (en)
WO (1) WO2008111269A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010131573A1 (en) * 2009-05-11 2010-11-18 住友電気工業株式会社 Insulating gate type bipolar transistor
JP2015130528A (en) * 2015-03-11 2015-07-16 住友電気工業株式会社 Method for manufacturing silicon carbide semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5638067B2 (en) * 2010-04-15 2014-12-10 良孝 菅原 Semiconductor device
JP5834801B2 (en) * 2011-11-16 2015-12-24 住友電気工業株式会社 Semiconductor device manufacturing method and semiconductor device
JP5880311B2 (en) * 2012-06-26 2016-03-09 住友電気工業株式会社 Silicon carbide semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09321323A (en) * 1996-03-27 1997-12-12 Fuji Electric Co Ltd Silicon carbide semiconductor substrate, method of manufacturing the same, and silicon carbide semiconductor device using the substrate
WO2005041305A1 (en) * 2003-10-16 2005-05-06 Cree, Inc. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09321323A (en) * 1996-03-27 1997-12-12 Fuji Electric Co Ltd Silicon carbide semiconductor substrate, method of manufacturing the same, and silicon carbide semiconductor device using the substrate
WO2005041305A1 (en) * 2003-10-16 2005-05-06 Cree, Inc. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010131573A1 (en) * 2009-05-11 2010-11-18 住友電気工業株式会社 Insulating gate type bipolar transistor
US8168515B2 (en) 2009-05-11 2012-05-01 Sumitomo Electric Industries, Ltd. Method for manufacturing semiconductor substrate
JP2015130528A (en) * 2015-03-11 2015-07-16 住友電気工業株式会社 Method for manufacturing silicon carbide semiconductor device

Also Published As

Publication number Publication date
JP2008226997A (en) 2008-09-25

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