[go: up one dir, main page]

WO2009075200A1 - 半導体装置とその製造方法、並びにトレンチゲートの製造方法 - Google Patents

半導体装置とその製造方法、並びにトレンチゲートの製造方法 Download PDF

Info

Publication number
WO2009075200A1
WO2009075200A1 PCT/JP2008/071858 JP2008071858W WO2009075200A1 WO 2009075200 A1 WO2009075200 A1 WO 2009075200A1 JP 2008071858 W JP2008071858 W JP 2008071858W WO 2009075200 A1 WO2009075200 A1 WO 2009075200A1
Authority
WO
WIPO (PCT)
Prior art keywords
region
trench gate
manufacturing
protrusion
drift region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/071858
Other languages
English (en)
French (fr)
Inventor
Sachiko Aoi
Takahide Sugiyama
Takashi Suzuki
Akitaka Soeno
Tsuyoshi Nishiwaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Toyota Central R&D Labs Inc
Original Assignee
Toyota Motor Corp
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp, Toyota Central R&D Labs Inc filed Critical Toyota Motor Corp
Priority to EP08859002A priority Critical patent/EP2234163A4/en
Priority to US12/743,525 priority patent/US20100276729A1/en
Priority to CN200880120102XA priority patent/CN101897027B/zh
Publication of WO2009075200A1 publication Critical patent/WO2009075200A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

ＩＧＢＴ１０は、ｎ＋型のエミッタ領域３４と、ｎ－型のドリフト領域２６と、エミッタ領域３４とドリフト領域２６の間に設けられているｐ型のボディ領域２８と、エミッタ領域３４からドリフト領域２６に向けてボディ領域２８内を伸びているトレンチゲート４０と、トレンチゲート４０の表面に接している絶縁体の突出部６０を備えている。突出部６０の少なくとも一部がドリフト領域２６内に突出している。 突出部６０は、表面部半導体領域から供給される電子がトレンチゲート４０の下方に移動するのを物理的に抑制し、これにより、その電子に引き寄せられてトレンチゲート４０の下方に正孔が集中するのを抑制することができる。この結果、ゲート容量がキャリアの集中によって経時的に変動するのを抑制することができ、高耐量なＩＧＢＴ１０を提供することができる。
PCT/JP2008/071858 2007-12-10 2008-12-02 半導体装置とその製造方法、並びにトレンチゲートの製造方法 Ceased WO2009075200A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08859002A EP2234163A4 (en) 2007-12-10 2008-12-02 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR AND METHOD FOR PRODUCING A TRUNK GATE
US12/743,525 US20100276729A1 (en) 2007-12-10 2008-12-02 Semiconductor device, manufacturing method thereof, and manufacturing method of trench gate
CN200880120102XA CN101897027B (zh) 2007-12-10 2008-12-02 半导体装置及其制造方法和沟槽栅的制造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-317913 2007-12-10
JP2007317913 2007-12-10
JP2008156240A JP2009164558A (ja) 2007-12-10 2008-06-16 半導体装置とその製造方法、並びにトレンチゲートの製造方法
JP2008-156240 2008-06-16

Publications (1)

Publication Number Publication Date
WO2009075200A1 true WO2009075200A1 (ja) 2009-06-18

Family

ID=40755443

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071858 Ceased WO2009075200A1 (ja) 2007-12-10 2008-12-02 半導体装置とその製造方法、並びにトレンチゲートの製造方法

Country Status (5)

Country Link
US (1) US20100276729A1 (ja)
EP (1) EP2234163A4 (ja)
JP (1) JP2009164558A (ja)
CN (1) CN101897027B (ja)
WO (1) WO2009075200A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011039888A1 (ja) * 2009-10-01 2011-04-07 トヨタ自動車株式会社 半導体装置
CN103311271A (zh) * 2012-03-07 2013-09-18 英飞凌科技奥地利有限公司 电荷补偿半导体器件
WO2016092901A1 (ja) * 2014-12-10 2016-06-16 トヨタ自動車株式会社 半導体装置
JP2016213374A (ja) * 2015-05-12 2016-12-15 株式会社豊田中央研究所 半導体装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012042404A2 (en) 2010-08-09 2012-04-05 Instituto Technológico Y De Estudios Superiores De Monterrey Antimicrobial, antibacterial and spore germination inhibiting activity from an avocado extract enriched in bioactive compounds
US8866222B2 (en) 2012-03-07 2014-10-21 Infineon Technologies Austria Ag Charge compensation semiconductor device
CN103390650B (zh) * 2012-05-04 2017-08-08 朱江 一种具有无源金属肖特基半导体装置及其制备方法
JP5747891B2 (ja) * 2012-10-09 2015-07-15 トヨタ自動車株式会社 半導体装置
DE102013207829A1 (de) * 2012-12-27 2014-07-03 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Chip-Antenne, Elektronisches Bauelement und Herstellungsverfahren dafür
US8823084B2 (en) 2012-12-31 2014-09-02 Infineon Technologies Austria Ag Semiconductor device with charge compensation structure arrangement for optimized on-state resistance and switching losses
JP5807653B2 (ja) * 2013-03-26 2015-11-10 トヨタ自動車株式会社 半導体装置の製造方法
JP6052065B2 (ja) * 2013-05-31 2016-12-27 豊田合成株式会社 半導体素装置および半導体装置の製造方法
US9147763B2 (en) 2013-09-23 2015-09-29 Infineon Technologies Austria Ag Charge-compensation semiconductor device
CA2998291C (en) 2015-09-23 2022-07-12 Instituto Tecnologico Y De Estudios Superiores De Monterrey Acetogenin molecules having antiplatelet and/or antithrombic activities, and methods and compositions thereof
US10932484B2 (en) 2016-10-19 2021-03-02 Instituto Tecnologico Y De Estudios Superiores De Monterrey Inhibitory activity of acetogenins against Listeria monocytogenes
JP7059556B2 (ja) * 2017-10-05 2022-04-26 富士電機株式会社 半導体装置
JP7204454B2 (ja) * 2018-11-30 2023-01-16 株式会社豊田中央研究所 半導体装置
DE102019216145A1 (de) * 2019-10-21 2021-04-22 Robert Bosch Gmbh Verfahren zum herstellen einer halbleitervorrichtung
CN111261713B (zh) * 2020-03-25 2022-09-09 广东芯聚能半导体有限公司 沟槽型igbt器件结构
JP7513553B2 (ja) * 2021-03-11 2024-07-09 株式会社東芝 半導体装置
CN119451146A (zh) * 2024-11-04 2025-02-14 南京南瑞半导体有限公司 低米勒电容的沟槽型igbt器件

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005056868A (ja) * 2001-06-04 2005-03-03 Matsushita Electric Ind Co Ltd 炭化珪素半導体装置の製造方法
JP2006093193A (ja) * 2004-09-21 2006-04-06 Toyota Motor Corp 半導体装置およびその製造方法
JP2006120951A (ja) 2004-10-22 2006-05-11 Toshiba Corp 半導体装置及びその製造方法
JP2006332591A (ja) 2005-04-28 2006-12-07 Denso Corp 半導体装置
WO2007012490A2 (de) * 2005-07-27 2007-02-01 Infineon Technologies Austria Ag Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
JP2007129259A (ja) * 1996-08-01 2007-05-24 Kansai Electric Power Co Inc:The 絶縁ゲート半導体装置
JP2007165380A (ja) * 2005-12-09 2007-06-28 Toshiba Corp 半導体装置及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3288218B2 (ja) * 1995-03-14 2002-06-04 三菱電機株式会社 絶縁ゲート型半導体装置およびその製造方法
US7132712B2 (en) * 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US7122860B2 (en) * 2002-05-31 2006-10-17 Koninklijke Philips Electronics N.V. Trench-gate semiconductor devices
JP2004022941A (ja) * 2002-06-19 2004-01-22 Toshiba Corp 半導体装置
JP3927111B2 (ja) * 2002-10-31 2007-06-06 株式会社東芝 電力用半導体装置
JP4903055B2 (ja) * 2003-12-30 2012-03-21 フェアチャイルド・セミコンダクター・コーポレーション パワー半導体デバイスおよびその製造方法
JP2005276931A (ja) * 2004-03-23 2005-10-06 Toshiba Corp 半導体装置およびその製造方法
JP4957005B2 (ja) * 2006-01-31 2012-06-20 富士電機株式会社 炭化珪素半導体素子の製造方法
JP4735414B2 (ja) * 2006-05-24 2011-07-27 トヨタ自動車株式会社 絶縁ゲート型半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007129259A (ja) * 1996-08-01 2007-05-24 Kansai Electric Power Co Inc:The 絶縁ゲート半導体装置
JP2005056868A (ja) * 2001-06-04 2005-03-03 Matsushita Electric Ind Co Ltd 炭化珪素半導体装置の製造方法
JP2006093193A (ja) * 2004-09-21 2006-04-06 Toyota Motor Corp 半導体装置およびその製造方法
JP2006120951A (ja) 2004-10-22 2006-05-11 Toshiba Corp 半導体装置及びその製造方法
JP2006332591A (ja) 2005-04-28 2006-12-07 Denso Corp 半導体装置
WO2007012490A2 (de) * 2005-07-27 2007-02-01 Infineon Technologies Austria Ag Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
JP2007165380A (ja) * 2005-12-09 2007-06-28 Toshiba Corp 半導体装置及びその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2234163A4

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011039888A1 (ja) * 2009-10-01 2011-04-07 トヨタ自動車株式会社 半導体装置
US8598652B2 (en) 2009-10-01 2013-12-03 Toyota Jidosha Kabushiki Kaisha Semiconductor device
JP5472309B2 (ja) * 2009-10-01 2014-04-16 トヨタ自動車株式会社 半導体装置
DE112009005299B4 (de) * 2009-10-01 2015-08-06 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung
CN103311271A (zh) * 2012-03-07 2013-09-18 英飞凌科技奥地利有限公司 电荷补偿半导体器件
WO2016092901A1 (ja) * 2014-12-10 2016-06-16 トヨタ自動車株式会社 半導体装置
JP2016111283A (ja) * 2014-12-10 2016-06-20 トヨタ自動車株式会社 半導体装置
US10153350B2 (en) 2014-12-10 2018-12-11 Toyota Jidosha Kabushiki Kaisha Semiconductor device
JP2016213374A (ja) * 2015-05-12 2016-12-15 株式会社豊田中央研究所 半導体装置

Also Published As

Publication number Publication date
JP2009164558A (ja) 2009-07-23
EP2234163A1 (en) 2010-09-29
EP2234163A4 (en) 2012-07-04
CN101897027A (zh) 2010-11-24
US20100276729A1 (en) 2010-11-04
CN101897027B (zh) 2012-02-29

Similar Documents

Publication Publication Date Title
WO2009075200A1 (ja) 半導体装置とその製造方法、並びにトレンチゲートの製造方法
US9082815B2 (en) Semiconductor device having carrier extraction in electric field alleviating layer
US8653628B1 (en) Power semiconductor device and method of manufacturing the same
US20130153999A1 (en) Trench gate mosfet device
US9166040B2 (en) Semiconductor device
CN104347689B (zh) 双沟槽‑栅极绝缘栅双极晶体管结构
US20180019331A1 (en) Semiconductor device
WO2012120359A3 (en) Insulated-gate bipolar transistor
WO2005112128A3 (en) Trench mosfet including buried source electrode and method of fabricating the same
JP2019079833A (ja) スイッチング素子とその製造方法
CN104124274A (zh) 超结横向双扩散金属氧化物半导体场效应管及其制作方法
US20140138738A1 (en) Semiconductor device
TWM410990U (en) High Antistatic capability schottky diode
US9263560B2 (en) Power semiconductor device having reduced gate-collector capacitance
CN103762230B (zh) N沟道注入效率增强型绝缘栅双极型晶体管
US9153678B2 (en) Power semiconductor device and method of manufacturing the same
JP2008177297A (ja) 半導体装置
US9252212B2 (en) Power semiconductor device
KR102406116B1 (ko) 반도체 소자 및 그 제조 방법
WO2008059350A3 (en) Semiconductor device and method for production thereof
WO2021017368A1 (zh) 绝缘栅双极型晶体管及其制作方法
JP2020043309A (ja) 半導体装置
CN103779404B (zh) P沟道注入效率增强型绝缘栅双极型晶体管
WO2013013959A3 (de) Hochvolttransistorbauelement und herstellungsverfahren
US9153675B2 (en) Power semiconductor and manufacturing method thereof

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880120102.X

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08859002

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12743525

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2008859002

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE