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WO2009019837A1 - 炭化珪素半導体素子およびその製造方法 - Google Patents

炭化珪素半導体素子およびその製造方法 Download PDF

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Publication number
WO2009019837A1
WO2009019837A1 PCT/JP2008/002073 JP2008002073W WO2009019837A1 WO 2009019837 A1 WO2009019837 A1 WO 2009019837A1 JP 2008002073 W JP2008002073 W JP 2008002073W WO 2009019837 A1 WO2009019837 A1 WO 2009019837A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
silicon
producing
semiconductor device
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/002073
Other languages
English (en)
French (fr)
Inventor
Chiaki Kudou
Kazuya Utsunomiya
Masashi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to US12/443,210 priority Critical patent/US7829416B2/en
Priority to JP2009505675A priority patent/JP4365894B2/ja
Priority to CN2008800008631A priority patent/CN101548387B/zh
Publication of WO2009019837A1 publication Critical patent/WO2009019837A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H10P30/2042—
    • H10P30/21—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

　炭化珪素基板１１上に形成されたゲート電極１８が、シリコン下層１８Ａと、シリコン下層１８Ａ上に設けられた第１の金属とシリコンの化合物からなるシリサイド上層１８Ｂを有している。炭化珪素基板１１の表面に形成されたｎ型ソース領域およびｐ＋領域にコンタクトするソース電極１ａｓは、第１の金属シリサイドとは異なる第２の金属シリサイドを含んでいる。シリコン下層１８Ａの側面は絶縁物で覆われている。
PCT/JP2008/002073 2007-08-07 2008-08-01 炭化珪素半導体素子およびその製造方法 Ceased WO2009019837A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/443,210 US7829416B2 (en) 2007-08-07 2008-08-01 Silicon carbide semiconductor device and method for producing the same
JP2009505675A JP4365894B2 (ja) 2007-08-07 2008-08-01 炭化珪素半導体素子の製造方法
CN2008800008631A CN101548387B (zh) 2007-08-07 2008-08-01 碳化硅半导体元件及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-205204 2007-08-07
JP2007205204 2007-08-07

Publications (1)

Publication Number Publication Date
WO2009019837A1 true WO2009019837A1 (ja) 2009-02-12

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Application Number Title Priority Date Filing Date
PCT/JP2008/002073 Ceased WO2009019837A1 (ja) 2007-08-07 2008-08-01 炭化珪素半導体素子およびその製造方法

Country Status (4)

Country Link
US (1) US7829416B2 (ja)
JP (1) JP4365894B2 (ja)
CN (1) CN101548387B (ja)
WO (1) WO2009019837A1 (ja)

Cited By (10)

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US20120153303A1 (en) * 2009-09-02 2012-06-21 Panasonic Corporation Semiconductor element and method for manufacturing same
JP2016058657A (ja) * 2014-09-11 2016-04-21 国立研究開発法人産業技術総合研究所 炭化珪素半導体素子及び炭化珪素半導体素子の製造方法
JPWO2015008336A1 (ja) * 2013-07-16 2017-03-02 株式会社日立製作所 半導体装置およびその製造方法
JP2018082190A (ja) * 2012-12-18 2018-05-24 ゼネラル・エレクトリック・カンパニイ 炭化ケイ素装置におけるオーミック接触のためのシステム及び方法
JP2020520091A (ja) * 2017-05-18 2020-07-02 ゼネラル・エレクトリック・カンパニイ 半導体電力変換デバイス用の集積ゲートレジスタ
JP2022125984A (ja) * 2021-02-17 2022-08-29 エスティーマイクロエレクトロニクス エス．アール．エル． 改良したゲートバイアス構造を有する垂直導通シリコンカーバイドｍｏｓｆｅｔ装置及びその製造方法
WO2024203338A1 (ja) * 2023-03-30 2024-10-03 ローム株式会社 半導体装置およびその製造方法
JP7810569B2 (ja) 2021-02-17 2026-02-03 エスティーマイクロエレクトロニクス エス．アール．エル． 改良したゲートバイアス構造を有する垂直導通シリコンカーバイドｍｏｓｆｅｔ装置及びその製造方法

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