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WO2008105266A1 - 電子線リソグラフィー用レジスト下層膜形成組成物 - Google Patents

電子線リソグラフィー用レジスト下層膜形成組成物 Download PDF

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Publication number
WO2008105266A1
WO2008105266A1 PCT/JP2008/052740 JP2008052740W WO2008105266A1 WO 2008105266 A1 WO2008105266 A1 WO 2008105266A1 JP 2008052740 W JP2008052740 W JP 2008052740W WO 2008105266 A1 WO2008105266 A1 WO 2008105266A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron lithography
lower layer
layer film
composition
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/052740
Other languages
English (en)
French (fr)
Inventor
Tomoyuki Enomoto
Takahiro Sakaguchi
Rikimaru Sakamoto
Masaki Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Priority to JP2009501187A priority Critical patent/JP5447832B2/ja
Priority to CN200880006374.7A priority patent/CN101622580B/zh
Priority to US12/449,737 priority patent/US8603731B2/en
Priority to EP08711564.8A priority patent/EP2120095B1/en
Priority to KR1020097019058A priority patent/KR101462508B1/ko
Publication of WO2008105266A1 publication Critical patent/WO2008105266A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Architecture (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

【課題】 電子線リソグラフィーを用いたデバイス作製工程に用いられ、電子線によって及ぼされる悪影響を低減し、良好なレジストパターンを得るのに有効な電子線リソグラフィー用レジスト下層膜組成物、並びに該電子線リソグラフィー用レジスト下層膜組成物を用いるレジストパターン形成法を提供する 【解決手段】 　ハロゲン原子を含有する繰り返し単位構造を有する高分子化合物及び溶媒を含む電子線リソグラフィー用レジスト下層膜形成組成物であり、基板上の転写パターンを形成する加工対象膜と電子線リソグラフィー用レジスト膜の間に成膜されて用いられ、半導体デバイス製造に使用される。前記高分子化合物は、少なくとも１０質量％のハロゲン原子を含有する。
PCT/JP2008/052740 2007-02-27 2008-02-19 電子線リソグラフィー用レジスト下層膜形成組成物 Ceased WO2008105266A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009501187A JP5447832B2 (ja) 2007-02-27 2008-02-19 電子線リソグラフィー用レジスト下層膜形成組成物
CN200880006374.7A CN101622580B (zh) 2007-02-27 2008-02-19 形成电子束光刻用抗蚀剂下层膜的组合物
US12/449,737 US8603731B2 (en) 2007-02-27 2008-02-19 Resist underlayer film forming composition for electron beam lithography
EP08711564.8A EP2120095B1 (en) 2007-02-27 2008-02-19 Use of a composition for forming a resist lower layer film for electron lithography
KR1020097019058A KR101462508B1 (ko) 2007-02-27 2008-02-19 전자선 리소그래피용 레지스트 하층막 형성 조성물

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007046922 2007-02-27
JP2007-046922 2007-02-27

Publications (1)

Publication Number Publication Date
WO2008105266A1 true WO2008105266A1 (ja) 2008-09-04

Family

ID=39721102

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052740 Ceased WO2008105266A1 (ja) 2007-02-27 2008-02-19 電子線リソグラフィー用レジスト下層膜形成組成物

Country Status (7)

Country Link
US (1) US8603731B2 (ja)
EP (1) EP2120095B1 (ja)
JP (1) JP5447832B2 (ja)
KR (1) KR101462508B1 (ja)
CN (1) CN101622580B (ja)
TW (1) TWI489217B (ja)
WO (1) WO2008105266A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010074075A1 (ja) * 2008-12-26 2010-07-01 日産化学工業株式会社 レジスト下層膜形成組成物用添加剤及びそれを含むレジスト下層膜形成用組成物
JP2010202723A (ja) * 2009-03-02 2010-09-16 Tosoh Corp ブロック共重合体及びその製造方法
WO2010122948A1 (ja) * 2009-04-21 2010-10-28 日産化学工業株式会社 Ｅｕｖリソグラフィー用レジスト下層膜形成組成物
KR20160099554A (ko) 2013-12-19 2016-08-22 닛산 가가쿠 고교 가부시키 가이샤 락톤구조함유 폴리머를 포함하는 전자선 레지스트 하층막 형성 조성물
JP2017102420A (ja) * 2015-05-18 2017-06-08 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
JPWO2021070775A1 (ja) * 2019-10-09 2021-04-15
WO2024204163A1 (ja) * 2023-03-31 2024-10-03 日産化学株式会社 レジスト下層膜形成用組成物

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
CN103415809B (zh) * 2011-03-15 2017-03-15 日产化学工业株式会社 形成抗蚀剂下层膜的组合物及使用该组合物的抗蚀剂图案的形成方法
JP5597616B2 (ja) * 2011-10-03 2014-10-01 富士フイルム株式会社 ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
JP5705103B2 (ja) 2011-12-26 2015-04-22 株式会社東芝 パターン形成方法
WO2015012172A1 (ja) * 2013-07-23 2015-01-29 日産化学工業株式会社 レジスト下層膜形成組成物用添加剤及びそれを含むレジスト下層膜形成組成物
CN104407499A (zh) * 2014-12-03 2015-03-11 复旦大学 使用氢氧化钾溶液显影uviii的电子束光刻高分辨率图形的方法
US11042090B2 (en) 2017-08-04 2021-06-22 Shin-Etsu Chemical Co., Ltd. Composition for forming organic film

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US5693691A (en) 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
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WO2003034152A1 (en) * 2001-10-10 2003-04-24 Nissan Chemical Industries, Ltd. Composition for forming antireflection film for lithography
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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2010074075A1 (ja) * 2008-12-26 2012-06-21 日産化学工業株式会社 レジスト下層膜形成組成物用添加剤及びそれを含むレジスト下層膜形成用組成物
WO2010074075A1 (ja) * 2008-12-26 2010-07-01 日産化学工業株式会社 レジスト下層膜形成組成物用添加剤及びそれを含むレジスト下層膜形成用組成物
JP2010202723A (ja) * 2009-03-02 2010-09-16 Tosoh Corp ブロック共重合体及びその製造方法
KR101739325B1 (ko) 2009-04-21 2017-05-24 닛산 가가쿠 고교 가부시키 가이샤 Ｅｕｖ 리소그래피용 레지스트 하층막 형성 조성물
WO2010122948A1 (ja) * 2009-04-21 2010-10-28 日産化学工業株式会社 Ｅｕｖリソグラフィー用レジスト下層膜形成組成物
CN102414619A (zh) * 2009-04-21 2012-04-11 日产化学工业株式会社 Euv光刻用抗蚀剂下层膜形成用组合物
JPWO2010122948A1 (ja) * 2009-04-21 2012-10-25 日産化学工業株式会社 Ｅｕｖリソグラフィー用レジスト下層膜形成組成物
US9005873B2 (en) 2009-04-21 2015-04-14 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer film for EUV lithography
CN104749887A (zh) * 2009-04-21 2015-07-01 日产化学工业株式会社 Euv光刻用抗蚀剂下层膜形成用组合物
KR20160099554A (ko) 2013-12-19 2016-08-22 닛산 가가쿠 고교 가부시키 가이샤 락톤구조함유 폴리머를 포함하는 전자선 레지스트 하층막 형성 조성물
US10289002B2 (en) 2013-12-19 2019-05-14 Nissan Chemical Industries, Ltd. Electron beam resist underlayer film-forming composition containing lactone-structure-containing polymer
JP2017102420A (ja) * 2015-05-18 2017-06-08 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
JPWO2021070775A1 (ja) * 2019-10-09 2021-04-15
WO2021070775A1 (ja) * 2019-10-09 2021-04-15 日産化学株式会社 レジスト下層膜形成組成物
JP7655223B2 (ja) 2019-10-09 2025-04-02 日産化学株式会社 レジスト下層膜形成組成物
WO2024204163A1 (ja) * 2023-03-31 2024-10-03 日産化学株式会社 レジスト下層膜形成用組成物

Also Published As

Publication number Publication date
CN101622580A (zh) 2010-01-06
TWI489217B (zh) 2015-06-21
EP2120095A4 (en) 2011-04-06
JPWO2008105266A1 (ja) 2010-06-03
EP2120095A1 (en) 2009-11-18
US20100081081A1 (en) 2010-04-01
CN101622580B (zh) 2013-12-25
US8603731B2 (en) 2013-12-10
EP2120095B1 (en) 2013-04-24
JP5447832B2 (ja) 2014-03-19
TW200900864A (en) 2009-01-01
KR101462508B1 (ko) 2014-11-17
KR20100015316A (ko) 2010-02-12

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