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WO2008093531A1 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
WO2008093531A1
WO2008093531A1 PCT/JP2008/050343 JP2008050343W WO2008093531A1 WO 2008093531 A1 WO2008093531 A1 WO 2008093531A1 JP 2008050343 W JP2008050343 W JP 2008050343W WO 2008093531 A1 WO2008093531 A1 WO 2008093531A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
manufacturing
via hole
insulating layer
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/050343
Other languages
English (en)
French (fr)
Inventor
Hideya Murai
Yuji Kayashima
Takehiko Maeda
Shintaro Yamamichi
Takuo Funaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
NEC Corp
Original Assignee
NEC Electronics Corp
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Electronics Corp, NEC Corp filed Critical NEC Electronics Corp
Priority to US12/521,936 priority Critical patent/US8043953B2/en
Priority to JP2008556041A priority patent/JPWO2008093531A1/ja
Publication of WO2008093531A1 publication Critical patent/WO2008093531A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10W70/09—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H10W20/081—
    • H10W70/099—
    • H10W70/60—
    • H10W70/614—
    • H10W70/682—
    • H10W70/685—
    • H10W72/01225—
    • H10W72/073—
    • H10W72/251—
    • H10W72/29—
    • H10W72/874—
    • H10W72/9413—
    • H10W90/00—
    • H10W90/734—

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

　製造が容易で、パッド数が多く取れ、また厚みも薄くできる半導体装置及びその製造方法を提供する。 　ＬＳＩチップと、ＬＳＩチップ上に設けられた非感光性樹脂から構成される絶縁層であって、外部接続用パッドに対応する位置にビアホールを有する絶縁層と、絶縁層上からビアホール内を経由して外部接続用パッドまで延在する配線層と、を有し、ビアホールの少なくとも一部は、前記絶縁層にレーザ光を照射することによって形成されたものであることを特徴とする半導体装置。
PCT/JP2008/050343 2007-01-29 2008-01-15 半導体装置及びその製造方法 Ceased WO2008093531A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/521,936 US8043953B2 (en) 2007-01-29 2008-01-15 Semiconductor device including an LSI chip and a method for manufacturing the same
JP2008556041A JPWO2008093531A1 (ja) 2007-01-29 2008-01-15 半導体装置及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007018141 2007-01-29
JP2007-018141 2007-01-29

Publications (1)

Publication Number Publication Date
WO2008093531A1 true WO2008093531A1 (ja) 2008-08-07

Family

ID=39673845

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050343 Ceased WO2008093531A1 (ja) 2007-01-29 2008-01-15 半導体装置及びその製造方法

Country Status (3)

Country Link
US (1) US8043953B2 (ja)
JP (1) JPWO2008093531A1 (ja)
WO (1) WO2008093531A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012074581A (ja) * 2010-09-29 2012-04-12 Teramikros Inc 半導体装置及びその製造方法
JP2013543275A (ja) * 2010-11-05 2013-11-28 インヴェンサス・コーポレイション 背面照明固体イメージセンサ
KR20160020761A (ko) * 2014-08-14 2016-02-24 삼성전기주식회사 인쇄회로기판 및 인쇄회로기판의 제조 방법
CN111223823A (zh) * 2018-11-23 2020-06-02 三星电子株式会社 半导体芯片和半导体封装件

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012134270A (ja) * 2010-12-21 2012-07-12 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
US10854550B2 (en) 2017-09-28 2020-12-01 Advanced Semiconductor Engineering, Inc. Semiconductor package and method of manufacturing the same
CN112366177B (zh) * 2020-11-10 2022-11-29 长江存储科技有限责任公司 半导体器件及其形成方法

Citations (4)

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JP2002246504A (ja) * 2000-12-15 2002-08-30 Ibiden Co Ltd 半導体素子を内蔵する多層プリント配線板の製造方法
JP2003007896A (ja) * 2001-06-26 2003-01-10 Ibiden Co Ltd 多層プリント配線板
JP2004165277A (ja) * 2002-11-11 2004-06-10 Shinko Electric Ind Co Ltd 電子部品実装構造及びその製造方法
JP2005332887A (ja) * 2004-05-18 2005-12-02 Shinko Electric Ind Co Ltd 多層配線の形成方法および多層配線基板の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
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JP2001094264A (ja) 1999-09-22 2001-04-06 Ibiden Co Ltd 多層プリント配線板およびその製造方法
JP2001185845A (ja) * 1999-12-15 2001-07-06 Internatl Business Mach Corp <Ibm> 電子部品の製造方法及び該電子部品
JP2001320171A (ja) * 2000-05-08 2001-11-16 Shinko Electric Ind Co Ltd 多層配線基板及び半導体装置
EP1321980A4 (en) 2000-09-25 2007-04-04 Ibiden Co Ltd SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING THE SEMICONDUCTOR ELEMENT, MULTILAYER CONDUCTOR PLATE AND METHOD FOR PRODUCING THE MULTILAYER CONDUCTOR PLATE
JP3981314B2 (ja) 2002-08-28 2007-09-26 京セラ株式会社 多層配線基板の製造方法
JP3888302B2 (ja) * 2002-12-24 2007-02-28 カシオ計算機株式会社 半導体装置
JP2004335641A (ja) * 2003-05-06 2004-11-25 Canon Inc 半導体素子内蔵基板の製造方法
JP4414712B2 (ja) * 2003-09-29 2010-02-10 大日本印刷株式会社 電子装置の製造方法
JP2005217372A (ja) * 2004-02-02 2005-08-11 Sony Corp 電子部品を内蔵する基板、基板およびそれらの製造方法
JP4298559B2 (ja) * 2004-03-29 2009-07-22 新光電気工業株式会社 電子部品実装構造及びその製造方法
JP4268560B2 (ja) * 2004-04-27 2009-05-27 大日本印刷株式会社 電子部品内蔵モジュールおよびその製造方法
JP4431747B2 (ja) * 2004-10-22 2010-03-17 富士通株式会社 半導体装置の製造方法
JP4759981B2 (ja) * 2004-11-02 2011-08-31 大日本印刷株式会社 電子部品内蔵モジュールの製造方法
EP1850378A3 (en) * 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
US7642114B2 (en) * 2006-07-19 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Micro electro mechanical device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246504A (ja) * 2000-12-15 2002-08-30 Ibiden Co Ltd 半導体素子を内蔵する多層プリント配線板の製造方法
JP2003007896A (ja) * 2001-06-26 2003-01-10 Ibiden Co Ltd 多層プリント配線板
JP2004165277A (ja) * 2002-11-11 2004-06-10 Shinko Electric Ind Co Ltd 電子部品実装構造及びその製造方法
JP2005332887A (ja) * 2004-05-18 2005-12-02 Shinko Electric Ind Co Ltd 多層配線の形成方法および多層配線基板の製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012074581A (ja) * 2010-09-29 2012-04-12 Teramikros Inc 半導体装置及びその製造方法
JP2013543275A (ja) * 2010-11-05 2013-11-28 インヴェンサス・コーポレイション 背面照明固体イメージセンサ
KR20130132840A (ko) * 2010-11-05 2013-12-05 디지털옵틱스 코포레이션 이스트 후면 조명 고체 이미지 센서
US9484379B2 (en) 2010-11-05 2016-11-01 Invensas Corporation Rear-face illuminated solid state image sensors
JP2017195375A (ja) * 2010-11-05 2017-10-26 インヴェンサス・コーポレイション 背面照明固体イメージセンサ
KR101943996B1 (ko) * 2010-11-05 2019-01-30 인벤사스 코포레이션 후면 조명 고체 이미지 센서
US10249673B2 (en) 2010-11-05 2019-04-02 Invensas Corporation Rear-face illuminated solid state image sensors
KR20160020761A (ko) * 2014-08-14 2016-02-24 삼성전기주식회사 인쇄회로기판 및 인쇄회로기판의 제조 방법
KR102268385B1 (ko) * 2014-08-14 2021-06-23 삼성전기주식회사 인쇄회로기판 및 인쇄회로기판의 제조 방법
CN111223823A (zh) * 2018-11-23 2020-06-02 三星电子株式会社 半导体芯片和半导体封装件
CN111223823B (zh) * 2018-11-23 2023-11-21 三星电子株式会社 半导体芯片和半导体封装件

Also Published As

Publication number Publication date
JPWO2008093531A1 (ja) 2010-05-20
US8043953B2 (en) 2011-10-25
US20090294951A1 (en) 2009-12-03

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