TWI814905B - Cut crystal adhesive film - Google Patents

Abstract

The present invention provides a die-cut die-bonding film that is less likely to float between an adhesive layer and an adhesive layer during cooling and stretching at room temperature, and thereafter. The die-cutting adhesive film of the present invention includes: a die-cutting tape having a laminated structure including a base material and an adhesive layer; and an adhesive layer that is releasably and closely adhered to the adhesive layer in the die-cutting tape; and radiation. The hardness of the above-mentioned adhesive layer surface before hardening measured by the nanoindentation method at a temperature of 23°C and a frequency of 100 Hz is 0.04 to 0.3 MPa, and at a temperature of 23°C and a peeling speed of 300 mm/min In the T-shaped peel test below, the peeling force between the above-mentioned adhesive layer and the above-mentioned adhesive layer before radiation hardening is 0.3 N/20 mm or more.

Description

Cut crystal adhesive film

The invention relates to a cut crystal adhesive film. More specifically, the present invention relates to a die-cut die-bonding film that can be used in the manufacturing process of semiconductor devices.

In the manufacturing process of semiconductor devices, in the process of obtaining a semiconductor wafer including an adhesive film having a size equivalent to that of a die-bonding wafer, that is, a semiconductor wafer with an adhesive layer for die-bonding, a die-cut bonding process is sometimes used. crystal film. The die-cut die-attach film has a size corresponding to the semiconductor wafer to be processed. For example, it has a die-cut tape including a base material and an adhesive layer, and a die-attach film (adhesive agent) that is releasably and tightly connected to the adhesive layer side. layer).

As one method of obtaining a semiconductor wafer with an adhesive layer using a die attach film, there is known a method of cutting the die attach film through a step of extending the die tape in the die attach film. In this method, first, the semiconductor wafer is bonded to the die-bonding film of the cutting die-bonding film. For example, the semiconductor wafer is processed in such a manner that it can be cut together with the die-bonding film and singulated into a plurality of semiconductor wafers.

Then, in order to cut the die-adhesive film on the dicing tape, a stretching device is used to stretch the dicing tape on the die-adhesive film in a two-dimensional direction including the diameter direction and the circumferential direction of the semiconductor wafer. In this extending step, the semiconductor wafer on the die-adhesive film is also cut at a part corresponding to the cutting part in the die-adhesive film, so that the semiconductor wafer is single-pieced on the die-adhesive film or die-cutting tape. into multiple semiconductor wafers.

Then, in order to enlarge the distance between the plurality of semiconductor wafers adhered to the crystal film after being cut on the dicing tape, the stretching step is performed again. Then, for example, after the cleaning step, each semiconductor wafer is lifted up from the lower side of the dicing tape together with the die adhesive film corresponding to the size of the wafer that is closely connected to the semiconductor wafer by the pin member of the pickup mechanism, and is then self-cut. Pick up from the crystal tape. In this way, a semiconductor wafer with an adherent crystal film, that is, an adhesive layer, is obtained. The semiconductor chip with the adhesive layer is bonded to an adherend such as a mounting substrate through the adhesive layer and by die bonding.

Technology related to the die-cut die-bonding film used in the above manner is described in the following Patent Documents 1 to 3, for example. [Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Publication No. 2007-2173 [Patent Document 2] Japanese Patent Application Laid-Open No. 2010-177401 [Patent Document 3] Japanese Patent Application Laid-Open No. 2016-115804

[Problem to be solved by the invention]

In recent years, in response to the demand for higher capacitance of semiconductors, circuit layers have been multilayered or silicon layers have been thinned. However, as the thickness (total thickness) of the circuit layer increases due to the multi-layering of the circuit layer, the ratio of the resin contained in the circuit layer tends to increase. Therefore, the multi-layered circuit layer and the thinned silicon The difference in linear expansion coefficient of the layers becomes significant, and the semiconductor wafer is prone to warping. Therefore, when using the previous die-cut die-bonding film, especially the semiconductor wafer in which the circuit layer of the die-bonded film obtained after die-cutting is multi-layered, there are the following problems: in the stretching step (cooling stretching and room temperature stretching described below) ) and thereafter (for example, during the cleaning step, picking up, etc.), peeling (lifting) is likely to occur at the interface between the adhesive layer and the die bonding film of the dicing tape. If floating occurs, the semiconductor wafer will easily slip off after the stretching step (cleaning step, processing, etc.).

The present invention was completed in view of the above problems, and its object is to provide a die-cut die-bonding film that is less likely to float between the adhesive layer and the adhesive layer during cooling and stretching at room temperature, and thereafter. [Technical means to solve problems]

The inventors of the present invention have made great efforts to achieve the above object, and have found that if the following die-cut die bonding film is used, floating is less likely to occur between the adhesive layer and the adhesive layer during cooling and stretching at room temperature, and thereafter. Starting from this, the die-cutting adhesive film includes: a die-cutting tape, which has a laminated structure including a base material and an adhesive layer; and an adhesive layer, which is releasably and closely connected to the above-mentioned adhesive layer in the above-mentioned die-cutting tape; radiation; The hardness of the above-mentioned adhesive layer surface before hardening measured by the nanoindentation method at a temperature of 23°C and a frequency of 100 Hz is 0.04 to 0.8 MPa, and under the conditions of a temperature of 23°C and a peeling speed of 300 mm/min In the T-shaped peel test below, the peeling force between the above-mentioned adhesive layer and the above-mentioned adhesive layer before radiation hardening is 0.3 N/20 mm or more. The present invention was completed based on these findings.

That is, the present invention provides a die-cutting adhesive film, which is provided with: a die-cutting tape having a laminated structure including a base material and an adhesive layer; and an adhesive layer that is releasably and closely adhered to the above-mentioned die-cutting tape. Adhesive layer; the hardness of the surface of the adhesive layer before radiation hardening measured by the nanoindentation method at a temperature of 23°C and a frequency of 100 Hz is 0.04 to 0.8 MPa, and at a temperature of 23°C and a peeling speed of 300 The peeling force between the above-mentioned adhesive layer and the above-mentioned adhesive layer before radiation hardening in the T-shaped peel test under the condition of mm/min is 0.3 N/20 mm or more.

The die-cut die-bonding film of the present invention includes a die-cut tape and an adhesive layer. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive layer is releasably and tightly connected to the adhesive layer in the dicing tape. The hardness of the surface of the adhesive layer of the die cutting tape before radiation hardening measured by the nanoindentation method at a temperature of 23°C and a frequency of 100 Hz is 0.04 to 0.8 MPa, and at a temperature of 23°C , The peeling force between the above-mentioned adhesive layer and the above-mentioned adhesive layer before radiation hardening in the T-shaped peel test under the condition of peeling speed of 300 mm/min is 0.3 N/20 mm or more. The die-cut die-bonding film having this structure can be used in the manufacturing process of semiconductor devices to obtain a semiconductor wafer with an adhesive layer attached.

In the manufacturing process of semiconductor devices, in order to obtain a semiconductor wafer with an adhesive layer attached as described above, a stretching step using a dicing die-bonding film, that is, a stretching step for cutting, may be performed. In this stretching step, the cutting force must properly act on the adhesive layer on the die tape in the die bonding film. As mentioned above, the hardness of the adhesive layer of the die-cut tape in the die-cut adhesive film of the present invention measured using the nanoindentation method under the conditions of a temperature of 23°C and a frequency of 100 Hz is: 0.04～0.8 MPa. The above-mentioned hardness measured by the nanoindentation method is calculated based on the load-indentation depth curve. The load-indentation depth curve is continuously measured when the indenter is loaded and unloaded. The indenter is pressed until it adheres. It is obtained by the load on the indenter when the agent layer is on the surface and the depth of indentation. In this way, the hardness measured by the nanoindentation method is an indicator of the physical properties of the surface of the adhesive layer. Due to the hardness of the adhesive layer in the die-cut die-bonding film of the present invention measured using the nanoindentation method is above 0.04 MPa, the surface of the adhesive layer is softer, and the adhesive layer and the adhesive layer can be The adhesiveness becomes appropriate, thereby suppressing the stretching step and subsequent peeling (lifting) between the adhesive layer and the adhesive layer. In addition, the hardness measured by the above-mentioned nanoindentation method is 0.8 MPa or less, which prevents the adhesion between the adhesive layer and the adhesive layer from becoming too strong, and can be attached after being cut in the following pick-up step. The semiconductor wafer with the agent layer is well peeled off from the adhesive layer, thereby achieving good pick-up. Furthermore, the hardness of the adhesive layer before radiation hardening measured by the nanoindentation method is within the above range.

Furthermore, in the die-cut die-bonding film of the present invention, as mentioned above, the gap between the above-mentioned adhesive layer and the above-mentioned adhesive layer in the T-type peeling test under the conditions of a temperature of 23° C. and a peeling speed of 300 mm/min. The peeling force is above 0.3 N/20 mm. If the above-mentioned peeling force is 0.3 N/20 mm or more, the adhesion between the adhesive layer and the adhesive layer can be moderated, thereby suppressing the stretching step and subsequent peeling between the adhesive layer and the adhesive layer. (floating).

Furthermore, in the die-cut die-bonding film of the present invention, the adhesive layer preferably contains a first acrylic polymer, and the first acrylic polymer contains a structural unit derived from a nitrogen atom-containing monomer. Furthermore, it is preferable to include a structural unit derived from (meth)acryloylmorpholine as the structural unit derived from a nitrogen atom-containing monomer. If the adhesive layer contains such a first acrylic polymer, the hardness measured by the nanoindentation method can be easily made to be within the above range and the peeling force can be made within the above range, thereby suppressing the occurrence of the stretching step and The subsequent peeling (lifting) between the adhesive layer and the adhesive layer, and the semiconductor wafer with the cut adhesive layer attached is well peeled from the adhesive layer in the following pick-up step, making it easy to achieve good results. Pick up. [Effects of the invention]

The die-bonding film of the present invention is less likely to cause floating between the adhesive layer and the adhesive layer during and after the stretching step of using the die-bonding film to obtain a semiconductor wafer with an adhesive layer. In particular, even when a semiconductor wafer with multi-layered circuit layers is used, floating is unlikely to occur.

[Cutting crystal film] The die-cutting adhesive film of the present invention includes: a die-cutting tape having a laminated structure including a base material and an adhesive layer; and an adhesive layer that is releasably and closely adhered to the adhesive layer in the die-cutting tape. An embodiment of the die-cut die-bonding film of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing one embodiment of the die-cut die-bonding film of the present invention.

As shown in FIG. 1 , the die attach film 1 includes a die tape 10 and an adhesive layer 20 laminated on the adhesive layer 12 in the die tape 10 , and can be used to obtain adhesion in the manufacture of semiconductor devices. An extension step in the process of coating semiconductor wafers.

The die-cut die attach film 1 has a disc shape having a size corresponding to a semiconductor wafer to be processed in the manufacturing process of a semiconductor device. The diameter of the die-cut die-bonding film 1 is, for example, in the range of 345 to 380 mm (corresponding to the 12-inch wafer type), 245 to 280 mm (corresponding to the 8-inch wafer type), and 195 to 230 mm. Within (corresponding to 6-inch wafer type), or within the range of 495 ~ 530 mm (corresponding to 18-inch wafer type). The die-cutting tape 10 in the die-cutting die-adhesive film 1 has a laminated structure including a base material 11 and an adhesive layer 12 .

(Substrate) The base material in the die-cutting tape is an element that functions as a support in the die-cutting tape or the die-cutting adhesive film. Examples of the base material include plastic base materials (especially plastic films). The above-mentioned base material may be a single layer or a laminate of base materials of the same type or different types.

Examples of the resin constituting the above-mentioned plastic base material include: low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block Copolymer polypropylene, homopolypropylene, polybutylene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid Polyolefin resins such as ester (random, alternating) copolymers, ethylene-butene copolymers, and ethylene-hexene copolymers; polyurethane; polyethylene terephthalate (PET), polynaphthalene Polyesters such as ethylene formate, polybutylene terephthalate (PBT); polycarbonate; polyimide; polyether ether ketone; polyether imine; aromatic polyamide, fully aromatic polyamide Polyamides such as amide; polyphenylene sulfide; fluororesin; polyvinyl chloride; polyvinylidene chloride; cellulose resin; polysiloxy resin, etc. From the viewpoint of ensuring good heat shrinkability in the base material and making it easy to maintain the distance between wafers by utilizing the dicing tape or local heat shrinkage of the base material in the normal temperature stretching step described below, the base material is preferably composed of ethylene-vinyl acetate. Ester copolymer as the main component.

In addition, the main component of the base material is the component accounting for the largest mass ratio among the constituent components. Only one type of the above-mentioned resin may be used, or two or more types may be used. When the adhesive layer is a radiation-hardening adhesive layer as described below, the base material is preferably radiolucent.

When the substrate is a plastic film, the plastic film may be unaligned or may be aligned in at least one direction (uniaxial direction, biaxial direction, etc.). When aligned in at least one direction, the plastic film can be heat-shrunk in the at least one direction. If it has heat-shrinkability, the outer peripheral portion of the semiconductor wafer in the dicing tape can be heat-shrunk, thereby fixing the semiconductor wafers with the adhesive layer attached to them after being singulated with the distance between them expanded. Therefore, the semiconductor wafer can be easily picked up. In order for the base material and the dicing tape to have isotropic heat shrinkability, the base material is preferably a biaxial alignment film. Furthermore, the above-mentioned plastic film aligned in at least one direction can be obtained by extending a non-stretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.).

The heat shrinkage rate of the base material and the dicing tape in the heat treatment test conducted under the conditions of a heating temperature of 100°C and a heating time of 60 seconds is preferably 1 to 30%, more preferably 2 to 25%, and still more preferably It is 3~20%, especially 5~20%. The above-mentioned thermal shrinkage rate is preferably the thermal shrinkage rate in at least one of the MD (Machine DirectioN, longitudinal) direction and the TD (Transverse DirectioN, transverse) direction.

In order to improve the adhesion and retention with the adhesive layer, the side surface of the adhesive layer of the base material can also be subjected to corona discharge treatment, plasma treatment, sand cushion processing, ozone exposure treatment, flame exposure treatment, high pressure treatment, etc. Physical treatments such as electric shock exposure treatment and ionizing radiation treatment; chemical treatments such as chromic acid treatment; and surface treatments such as easy-adhesion treatment using a coating agent (primer). In addition, in order to provide antistatic properties, a conductive vapor deposition layer containing metals, alloys, oxides thereof, etc. may also be provided on the surface of the base material. The surface treatment used to improve adhesion is preferably applied to the entire surface of the adhesive layer side of the substrate.

From the viewpoint of ensuring the strength of the base material to function as a support in the die tape and the die bonding film, the thickness of the base material is preferably 40 μm or more, more preferably 50 μm or more, and still more preferably It is 55 μm or more, preferably 60 μm or more. Furthermore, from the viewpoint of achieving appropriate flexibility in the die-cutting tape and the die-cut die-adhesive film, the thickness of the base material is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less. .

(adhesive layer) As mentioned above, the hardness of the adhesive layer surface of the adhesive layer in the die-cut die-bonding film measured by the nanoindentation method at a temperature of 23°C and a frequency of 100 Hz is 0.04 to 0.8 MPa, preferably 0.05～0.8 MPa, more preferably 0.05～0.7 MPa. The hardness measured by the above-mentioned nanoindentation method is 0.04 MPa or above, and the surface of the adhesive layer is soft, which can make the adhesion between the adhesive layer and the adhesive layer moderate, thereby suppressing the occurrence of the stretching step and its The subsequent peeling (lifting) between the adhesive layer and the adhesive layer. In addition, the hardness measured by the above-mentioned nanoindentation method is 0.8 MPa or less, which prevents the adhesion between the adhesive layer and the adhesive layer from becoming too strong, and can be attached after being cut in the following pick-up step. The semiconductor wafer with the agent layer is well peeled off from the adhesive layer, thereby achieving good pick-up. Furthermore, the hardness of the adhesive layer before radiation hardening measured by the nanoindentation method is within the above range. In addition, in this specification, "before radiation curing" refers to a state in which the adhesive layer has not been cured by radiation irradiation, and also includes the case where the adhesive layer is not a radiation curable adhesive layer described below.

The above-mentioned hardness measured by the nanoindentation method is calculated based on the load-indentation depth curve. The load-indentation depth curve is continuously measured when the indenter is loaded and unloaded. The indenter is pressed until it adheres. It is obtained by the load on the indenter when the agent layer is on the surface and the depth of indentation. In this way, the hardness measured by the nanoindentation method is an indicator of the physical properties of the surface of the adhesive layer. The hardness of the above-mentioned adhesive layer measured by the nanoindentation method is the hardness obtained by the nanoindentation test under the conditions of a load of 1 mN, a loading and unloading speed of 0.1 mN/s, and a holding time of 1 s.

The adhesive layer of the dicing tape preferably contains an acrylic polymer as a base polymer. The above-mentioned acrylic polymer is a polymer containing a structural unit derived from an acrylic monomer (a monomer component having a (meth)acrylyl group in the molecule) as a structural unit of the polymer. The acrylic polymer is preferably a polymer containing the structural unit derived from (meth)acrylic acid ester at the highest mass ratio. Furthermore, only one type of acrylic polymer may be used, or two or more types of acrylic polymers may be used. In addition, in this specification, "(meth)acrylic acid" means "acrylic acid" and/or "methacrylic acid" (either or both of "acrylic acid" and "methacrylic acid"), and the same applies to others. .

Examples of the (meth)acrylate include hydrocarbon group-containing (meth)acrylate which may have an alkoxy group. Examples of the hydrocarbon group-containing (meth)acrylate include alkyl (meth)acrylate, cycloalkyl (meth)acrylate, and aryl (meth)acrylate. Examples of the alkyl (meth)acrylate include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, and third butyl (meth)acrylate. Pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (laurel Ester), tridecyl ester, myristyl ester, cetyl ester, octadecyl ester, eicosyl ester, etc.

Examples of the (meth)acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl (meth)acrylic acid. Examples of the aryl (meth)acrylate include phenyl ester and benzyl (meth)acrylate. Examples of the hydrocarbon group-containing (meth)acrylate having an alkoxy group include those in which one or more hydrogen atoms in the hydrocarbon group in the hydrocarbon group-containing (meth)acrylate are substituted with an alkoxy group. Examples thereof include (Meth)acrylic acid 2-methoxymethyl ester, 2-methoxyethyl ester, 2-methoxybutyl ester, etc. Only one type of the hydrocarbon group-containing (meth)acrylate which may have an alkoxy group may be used, or two or more types may be used.

The above-mentioned (meth)acrylate having a hydrocarbon group which may have an alkoxy group preferably has a total number of carbon atoms in the ester part (in the case of an alkoxy group, the total number of carbon atoms in the alkoxy group is included) is 6 ~10. Particularly preferred is a hydrocarbon group-containing (meth)acrylate with a total number of carbon atoms of 6 to 10. In this case, it is easier to balance the suppression of floating between the adhesive layer and the adhesive layer in the stretching step and the subsequent step, and the good pick-up property in the pick-up step.

In order to appropriately express in the adhesive layer 12 the basic characteristics such as the adhesiveness obtained by the hydrocarbon group-containing (meth)acrylate which may have an alkoxy group, the possible % of all monomer components used to form the acrylic polymer The ratio of the hydrocarbon group-containing (meth)acrylate having an alkoxy group is preferably 20 mol% or more, more preferably 30 mol% or more. Furthermore, it is more preferable that it is 40 mol% or more.

Furthermore, in this specification, among the above-mentioned monomer components, compounds having a radiation polymerizable group (for example, having a radical polymerizable function) are not included in the stage of being incorporated into the polymer before the adhesive layer is irradiated with radiation. group and the first functional group of the cross-linking agent).

The acrylic polymer is preferably a polymer containing a structural unit derived from a nitrogen atom-containing monomer as a structural unit of the polymer (sometimes it is called a "first acrylic polymer"). In this case, it is easy to make the hardness measured by the nanoindentation method fall within the above range and the above peeling force fall within the above range, thereby suppressing the occurrence of the stretching step and the subsequent separation between the adhesive layer and the adhesive layer. The semiconductor wafer with the cut adhesive layer attached thereto can be peeled off (lifted) well from the adhesive layer in the following pick-up step, so that good pick-up can be easily achieved.

Examples of the nitrogen atom-containing monomer include morpholinyl group-containing monomers such as (meth)acrylamide, cyano group-containing monomers such as (meth)acrylonitrile, and acyl-containing monomers such as (meth)acrylamide. Amino monomers, etc. Among them, the above-mentioned nitrogen atom-containing monomer preferably contains a morpholino group-containing monomer (especially (meth)acryloylmorpholine). Only one type of the above nitrogen atom-containing monomer may be used, or two or more types may be used.

From the viewpoint of making it easier for the hardness measured by the nanoindentation method to be within the above range and the above peeling force to be within the above range, among all the monomer components used to form the acrylic polymer, The ratio of structural units derived from nitrogen atom-containing monomers in all monomer components of the first acrylic polymer is preferably 1 mol% or more, more preferably 2 mol% or more. Moreover, the said ratio is preferably 30 mol% or less, more preferably 20 mol% or less.

In order to modify cohesion, heat resistance, etc., the above-mentioned acrylic polymer may also contain, in addition to the above-mentioned nitrogen atom-containing monomer, structural units derived from other monomer components. Hydrocarbon-based (meth)acrylate copolymer. Examples of the other monomer components include functional group-containing monomers such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, and phosphate group-containing monomers. .

Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid, and the like. .

Examples of the acid anhydride monomer include maleic anhydride, itaconic anhydride, and the like. Examples of the hydroxyl-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6-(meth)acrylate. Hydroxyhexyl ester, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethylcyclohexyl) (meth)acrylate ) methyl ester, etc.

Examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate, methylglycidyl (meth)acrylate, and the like.

Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, and (meth)acrylamidepropanesulfonic acid. Acid, (meth)acrylic acid sulfopropyl ester, (meth)acryloyloxynaphthalene sulfonic acid, etc.

Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacrylyl phosphate and the like.

As the above-mentioned other monomer components, a hydroxyl-containing monomer is preferred, and 2-hydroxyethyl (meth)acrylate is more preferred. That is, the acrylic polymer preferably contains a structural unit derived from 2-hydroxyethyl (meth)acrylate. Only one type of the above-mentioned other monomer components may be used, or two or more types may be used. In order to appropriately express in the adhesive layer 12 the basic characteristics such as adhesiveness obtained by the hydrocarbon group-containing (meth)acrylate which may have an alkoxy group, all monomer components used to form the acrylic polymer contain The total ratio of the nitrogen atom monomer and the other monomer components mentioned above is preferably 60 mol% or less, more preferably 40 mol% or less.

In order to appropriately express in the adhesive layer the basic properties such as adhesiveness obtained by the hydrocarbon group-containing (meth)acrylate which may have an alkoxy group, all monomer components used to form the acrylic polymer are derived from The ratio of the structural units of the hydroxyl-containing monomer is preferably 5 mol% or more, more preferably 10 mol% or more. Moreover, the said ratio is, for example, 80 mol% or less, 70 mol% or less, or 60 mol% or less.

Furthermore, the first acrylic polymer preferably contains a structural unit derived from a hydroxyl-containing monomer and a structural part derived from a compound having an isocyanate group and a radically polymerizable functional group. Examples of the radically polymerizable functional group include a radiation-polymerizable carbon-carbon double bond, such as vinyl, acryl, isopropenyl, (meth)acrylyl (acrylyl, methacrylyl). acyl group) etc. Among them, a (meth)acrylyl group is preferred.

When the first acrylic polymer contains a structural unit derived from a hydroxyl-containing monomer and a structural part derived from a compound having an isocyanate group and a radical polymerizable functional group, the first acrylic polymer derived from The molar ratio of the structural part of the compound having an isocyanate group and a radically polymerizable functional group to the structural unit derived from the hydroxyl-containing monomer is preferably 0.7 or more, more preferably 0.75 or more. Furthermore, the molar ratio is preferably 0.9 or less, more preferably 0.85 or less. If the molar ratio is within the above range, it will be easier to make the hardness measured by the nanoindentation method to be within the above range and the peeling force to be within the above range.

Examples of the compound having an isocyanate group and a radical polymerizable functional group include methacrylyl isocyanate, 2-acrylyloxyethyl isocyanate, 2-methacrylyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, etc. Among them, 2-propenyloxyethyl isocyanate and 2-methacryloxyethyl isocyanate are preferred.

The above-mentioned acrylic polymer including the first acrylic polymer may also include a structure derived from a polyfunctional monomer copolymerizable with the monomer component forming the acrylic polymer in order to form a cross-linked structure in the polymer skeleton. unit. Examples of the polyfunctional monomer include hexylene glycol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, and neopentyl glycol di(meth)acrylate. Glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate , epoxy (meth)acrylate (such as polyglycidyl (meth)acrylate), (meth)acrylic polyester, (meth)acrylic urethane, etc. have (methyl) in the molecule Monomers of acrylic group and other reactive functional groups, etc. Only one type of the above-mentioned polyfunctional monomer may be used, or two or more types may be used. In order to appropriately express in the adhesive layer 12 the basic characteristics such as adhesiveness obtained by the hydrocarbon group-containing (meth)acrylate which may have an alkoxy group, the above-mentioned among all monomer components used to form the acrylic polymer The ratio of the polyfunctional monomer is preferably 40 mol% or less, more preferably 30 mol% or less.

An acrylic polymer is obtained by polymerizing one or more monomer components including an acrylic monomer. Examples of polymerization methods include solution polymerization, emulsion polymerization, block polymerization, suspension polymerization, and the like.

The mass average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably 350,000 to 1,000,000. If the mass average molecular weight is 300,000 or more, there is a tendency that there are fewer low molecular weight substances in the adhesive layer, and contamination of the adhesive layer, semiconductor wafer, etc. can be further suppressed.

The adhesive layer or the adhesive forming the adhesive layer may also contain a cross-linking agent. For example, when an acrylic polymer is used as the base polymer, the acrylic polymer can be cross-linked, thereby further reducing the low molecular weight substances in the adhesive layer. In addition, the mass average molecular weight of the acrylic polymer can be increased. Examples of the crosslinking agent include polyisocyanate compounds, epoxy compounds, polyol compounds (polyphenol compounds, etc.), aziridine compounds, melamine compounds, and the like. When a cross-linking agent is used, the usage amount is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, based on 100 parts by mass of the base polymer.

The adhesive layer can be an adhesive layer that can deliberately reduce the adhesive force by external action during the use of the die-cutting adhesive film (adhesive force-reducible adhesive layer), or it can be an adhesive layer that can be used to cut the die. An adhesive layer whose adhesion is almost or completely not reduced due to external effects during the use of the die-bonding film (non-adhesion-reducing adhesive layer). Semiconductor wafers can be singulated by using a die-cut die-bonding film. The method and conditions for dicing the circle are appropriately selected.

In the case where the adhesive layer is an adhesive layer with a reducible adhesive force, during the manufacturing process or use of the die-cut die-bonding film, the adhesive layer can be used separately to show a state of relatively high adhesive force and to show a relatively low adhesive force. A state of low adhesion. For example, when the adhesive layer is attached to the adhesive layer of the die-cut tape during the manufacturing process of the die-cut die-adhesive film, or when the die-cut die-adhesive film is used in the die-cutting step, the adhesive layer can be used to display relatively The state of high adhesion suppresses and prevents the adherends such as the adhesive layer from floating up from the adhesive layer. On the other hand, the semiconductor attached to the adhesive layer is then picked up with the dicing tape used for self-dicing the die bonding film. In the step of picking up the wafer, the adhesive force of the adhesive layer can be reduced to facilitate the picking up.

Examples of the adhesive that forms such an adhesive layer that can reduce adhesive force include radiation curable adhesives, heat-foaming adhesives, and the like. As an adhesive to form an adhesive layer with a reducible adhesive force, one adhesive may be used, or two or more adhesives may be used.

As the radiation-curable adhesive, for example, an adhesive that is cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or Type of adhesive (UV curable adhesive).

Examples of the radiation-curable adhesive include radiation-polymerizable monomer components or oligomer components containing a base polymer such as the above-mentioned acrylic polymer and a functional group such as a radiation-polymerizable carbon-carbon double bond. Additive type radiation hardening adhesive.

Examples of the radiation-polymerizable monomer component include (meth)acrylic urethane, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol tetrakis(meth)acrylate. hydroxy) acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, etc. Examples of the radiation-polymerizable oligomer component include various oligomers such as polyurethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers. Preferably, the molecular weight is Around 100 to 30,000. The content of the radiation-curable monomer component and oligomer component in the radiation-curable adhesive forming the adhesive layer is, for example, 5 to 500 parts by mass, preferably 40 to 100 parts by mass relative to 100 parts by mass of the base polymer. About 150 parts by mass. In addition, as an additive type radiation curable adhesive, for example, what is disclosed in Japanese Patent Application Publication No. Sho 60-196956 can also be used.

Examples of the radiation-curable adhesive include an intrinsic type of a base polymer containing a functional group such as a radiation-polymerizable carbon-carbon double bond in a polymer side chain or in the polymer main chain. Radiation hardening adhesive. If such an intrinsic radiation-curable adhesive is used, unintended changes over time in the adhesive properties caused by movement of low molecular weight components within the formed adhesive layer tend to be suppressed.

As the base polymer contained in the above-mentioned intrinsic type radiation curable adhesive, an acrylic polymer (especially the above-mentioned first acrylic polymer) is preferred. An example of a method for introducing radiation-polymerizable carbon-carbon double bonds into an acrylic polymer is a method of polymerizing (copolymerizing) raw material monomers containing a monomer component having a first functional group to obtain an acrylic polymer. Thereafter, a compound having a second functional group capable of reacting with the first functional group and a radiation-polymerizable carbon-carbon double bond is condensed with an acrylic polymer while maintaining the radiation-polymerizability of the carbon-carbon double bond. reaction or addition reaction.

Examples of combinations of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridinyl group, an aziridinyl group and a carboxyl group, a hydroxyl group and an isocyanate group, and an isocyanate group. radicals and hydroxyl groups, etc. Among these, from the viewpoint of ease of reaction tracking, a combination of a hydroxyl group and an isocyanate group, and a combination of an isocyanate group and a hydroxyl group are preferred. Among them, from the viewpoint of the technical difficulty of producing a polymer having a highly reactive isocyanate group and the ease of producing and obtaining an acrylic polymer having a hydroxyl group, the above-mentioned first functional group is preferred. The group is a hydroxyl group and the second functional group is an isocyanate group. Examples of the compound having an isocyanate group and a radioactive polymerizable carbon-carbon double bond include the above-mentioned compound having an isocyanate group and a radical polymerizable functional group. Examples of the acrylic polymer having a hydroxyl group include the above-mentioned hydroxyl-containing monomers, or ether compounds derived from 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, etc. The structural unit.

The radiation curable adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketool compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, and diphenyl Methyl ketone compounds, 9-oxosulfide𠮿 Compounds, camphorquinone, halogenated ketones, acylphosphine oxides, acylphosphonates, etc. Examples of the α-ketool compound include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)one and α-hydroxy-α,α'-dimethylphenyl ketone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexylphenylketone, etc. Examples of the acetophenone compound include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2-methylacetophenone. Base-1-[4-(methylthio)-phenyl]-2-morpholinopropane-1, etc. Examples of the benzoin ether-based compound include benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether, and the like. Examples of the ketal compound include benzildimethyl ketal and the like. Examples of the aromatic sulfonyl chloride-based compound include 2-naphthalene sulfonyl chloride and the like. Examples of the photoactive oxime-based compound include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Examples of the benzophenone compound include benzophenone, benzoyl benzoic acid, 3,3'-dimethyl-4-methoxybenzophenone, and the like. As the above 9-oxosulfide𠮿 Compounds, for example, 9-oxosulfide , 2-chloro-9-oxosulfide𠮿 , 2-Methyl-9-oxosulfide𠮿 , 2,4-dimethyl-9-oxosulfide𠮿 , isopropyl-9-oxosulfide𠮿 ,2,4-Dichloro-9-oxosulfide𠮿 , 2,4-diethyl-9-oxosulfide𠮿 , 2,4-diisopropyl-9-oxysulfide𠮿 wait. The content of the photopolymerization initiator in the radiation curable adhesive is, for example, 0.05 to 20 parts by mass relative to 100 parts by mass of the base polymer.

The above-mentioned heat-foaming adhesive is an adhesive containing components (foaming agent, heat-expandable microspheres, etc.) that foam or expand by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride, azides, and the like. Examples of the organic foaming agent include: chlorofluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azobisisobutyronitrile, azodimethylamide, barium azodicarboxylate, etc. Azo compounds; p-toluenesulfonyl hydrazine, diphenyl-3,3'-disulfonyl hydrazine, 4,4'-oxybis(benzenesulfonylhydrazine), allyl bis(sulfonylhydrazine), etc. Hydrazine compounds; p-toluenesulfonamide amidourea, 4,4'-oxybis(benzenesulfonamide amidourea) and other amidurea compounds; 5-morpholinyl-1,2,3,4-thiane Triazole compounds such as azole; N,N'-dinitrosopentamethylenetetramine, N,N'-dimethyl-N,N'-dinitrosoterephthalamide and other N- Nitroso compounds, etc. Examples of the thermally expandable microspheres include microspheres in which a substance that is easily vaporized and expanded by heating is sealed in a shell. Examples of the above-mentioned substances that are easily vaporized and expanded by heating include isobutane, propane, pentane, and the like. Thermal-expandable microspheres can be produced by sealing a substance that is easily vaporized and expanded by heating into a shell-forming substance using an aggregation method or an interfacial polymerization method. As the above-mentioned shell-forming material, a material showing thermal meltability or a material capable of being ruptured by thermal expansion of a sealed material can be used. Examples of such substances include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polystyrene, and the like.

Examples of the non-reducing adhesive force adhesive layer include a pressure-sensitive adhesive layer. Furthermore, the pressure-sensitive adhesive layer includes an adhesive layer formed of the radiation-curable adhesive described above for the adhesive layer with reduced adhesive force, which has been cured by radiation irradiation in advance and has a certain adhesive force. Adhesive layer. As the adhesive forming the non-reducing adhesive layer, one adhesive may be used, or two or more adhesives may be used. In addition, the adhesive layer may be a non-reducing adhesive layer as a whole, or a part of it may be a non-reducing adhesive layer. For example, when the adhesive layer has a single-layer structure, the entire adhesive layer can be a non-reducing adhesive layer, or it can be a specific part of the adhesive layer (for example, the bonding target area of the annular frame and located in The area outside the central area) is a non-adhesion-reducing adhesive layer, and other parts (such as the central area where the semiconductor wafer is bonded) are an adhesive layer that can reduce adhesion. In addition, when the adhesive layer has a laminated structure, all the adhesive layers in the laminated structure may be non-reducing adhesive layers, or part of the adhesive layers in the laminated structure may be a non-reducing adhesive layer. layer.

An adhesive layer in a form in which an adhesive layer made of a radiation-hardening adhesive (a radiation-hardening adhesive layer that has not been irradiated with radiation) has been hardened in advance by irradiation with radiation (a radiation-hardening type adhesive layer that has been irradiated with radiation). Even if the adhesive force is reduced due to radiation irradiation, the adhesion generated by the contained polymer component is shown, so that the adhesive layer of the dicing tape can exert the minimum required adhesive force during the dicing step, etc. When a radiation-irradiated radiation-hardening adhesive layer is used, in the direction of surface expansion of the adhesive layer, the entirety of the adhesive layer can be a radiation-irradiated radiation-hardening adhesive layer, or the adhesive layer can be One part of the layer is a radiation-curable adhesive layer that has been irradiated with radiation, and the other part is a radiation-curable adhesive layer that has not been irradiated with radiation. Furthermore, in this specification, the so-called "radiation curable adhesive layer" refers to an adhesive layer formed of a radiation curable adhesive, including a radiation curable radiation-free radiation curable adhesive layer and the adhesive layer The two layers are the radiation-hardened radiation-curable adhesive layer after the layer is cured by radiation irradiation.

As the adhesive forming the pressure-sensitive adhesive layer, a well-known or commonly used pressure-sensitive adhesive can be used, and an acrylic adhesive or a rubber adhesive using an acrylic polymer as a base polymer is preferably used. When the adhesive layer contains an acrylic polymer as a pressure-sensitive adhesive, the acrylic polymer preferably contains structural units derived from (meth)acrylate as the largest structural unit in terms of mass ratio. As the acrylic polymer, for example, the acrylic polymer described as the acrylic polymer that can be contained in the adhesive layer can be used.

In addition to the above components, the adhesive layer or the adhesive forming the adhesive layer may also be formulated with well-known or commonly used adhesive layers such as cross-linking accelerators, adhesion-imparting agents, anti-aging agents, colorants (pigments, dyes, etc.) additives used in. Examples of the coloring agent include compounds that are colored by radiation irradiation. When a compound colored by radiation irradiation is contained, only the portion irradiated with radiation may be colored. The above-mentioned compounds colored by radiation irradiation are colorless or light-colored compounds before radiation irradiation but become colored by radiation irradiation. Examples thereof include leuco dyes and the like. The usage amount of the compound colored by radiation irradiation is not particularly limited and can be appropriately selected.

The thickness of the adhesive layer is not particularly limited. When the adhesive layer is an adhesive layer formed of a radiation-hardening adhesive, the balance of the adhesion force to the adhesive layer before and after radiation curing of the adhesive layer is obtained. From a viewpoint, it is preferably about 1 to 50 μm, more preferably 2 to 40 μm, and still more preferably 5 to 30 μm.

(adhesive layer) The adhesive layer functions as a thermosetting adhesive for display die bonding and, if necessary, also has an adhesive function for holding workpieces such as semiconductor wafers and frame members such as ring frames. The adhesive layer can be cut by applying tensile stress and used.

The adhesive layer and the adhesive constituting the adhesive layer may include a thermosetting resin and, for example, a thermoplastic resin as an adhesive component, or may include a thermoplastic resin having a thermosetting functional group that can react with a hardener to form a bond. When the adhesive constituting the adhesive layer contains a thermoplastic resin having a thermosetting functional group, the adhesive does not need to contain a thermosetting resin (epoxy resin, etc.). The adhesive layer may have a single-layer structure or a multi-layer structure.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutadiene rubber. Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET or PBT, polyimide resin Amine imine resin, fluorine resin, etc. Only one type of the above-mentioned thermoplastic resin may be used, or two or more types may be used. As the thermoplastic resin, an acrylic resin is preferred because it has less ionic impurities and has high heat resistance, so that it is easy to ensure joint reliability by an adhesive layer.

The acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth)acrylate that may have an alkoxy group as the largest structural unit in terms of mass ratio. Examples of the hydrocarbon group-containing (meth)acrylate that may have an alkoxy group include hydrocarbon group-containing (meth)acrylic acid that forms the acrylic polymer that may be included in the adhesive layer. Examples of esters.

The above-mentioned acrylic resin may also contain structural units derived from other monomer components, and the other monomer components may be copolymerized with a hydrocarbon group-containing (meth)acrylate that may have an alkoxy group. Examples of the other monomer components include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, and acrylonitrile. Functional group-containing monomers, various polyfunctional monomers, etc., specifically exemplified as other monomer components constituting the acrylic polymer that can be included in the adhesive layer, can be used.

When the adhesive layer contains a thermosetting resin as well as a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amine resin, unsaturated polyester resin, polyurethane resin, polysiloxy resin, thermosetting polyester resin, etc. Imide resin, etc. Only one type of the above-mentioned thermosetting resin may be used, or two or more types may be used. As the above-mentioned thermosetting resin, an epoxy resin is preferred because the content of ionic impurities and the like that may cause corrosion of semiconductor wafers to be bonded tends to be small. In addition, as the hardener of the epoxy resin, a phenol resin is preferred.

Examples of the above-mentioned epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, and fluorine type. Type, phenolic novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenolethane type, hydantoin type, triglycidyl isocyanurate type, glycidylamine type Epoxy resin, etc. Among them, novolac-type epoxy resin, biphenyl-type epoxy resin, trihydroxyphenylmethane-type epoxy resin, Tetraphenol ethane type epoxy resin.

Examples of the phenol resin that can function as a hardener for epoxy resins include novolak-type phenol resins, resol-type phenol resins, and polyhydroxystyrenes such as polyparahydroxystyrene. Examples of the novolac-type phenol resin include phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, nonylphenol novolak resin, and the like. Only one type of the above-mentioned phenol resin may be used, or two or more types may be used. Among them, phenolic novolac resins and phenol aralkanes are preferred from the viewpoint that when used as a hardener for an epoxy resin as an adhesive for die bonding, there is a tendency to improve the connection reliability of the adhesive. base resin.

From the viewpoint of fully advancing the curing reaction between the epoxy resin and the phenol resin in the adhesive layer, the phenol resin is contained in an amount corresponding to 1 equivalent of the epoxy group in the epoxy resin component. The hydroxyl group in the resin is preferably 0.5 to 2.0 equivalents, more preferably 0.7 to 1.5 equivalents.

When the adhesive layer contains a thermosetting resin, from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the adhesive layer, the content ratio of the thermosetting resin relative to the total mass of the adhesive layer is preferably: 5 to 60 mass%, more preferably 10 to 50 mass%.

When the adhesive layer contains a thermoplastic resin having a thermosetting functional group, for example, an acrylic resin containing a thermosetting functional group can be used as the thermoplastic resin. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth)acrylate that may have an alkoxy group as the largest structural unit in terms of mass ratio. Examples of the hydrocarbon group-containing (meth)acrylate which may have an alkoxy group include hydrocarbon group-containing (meth)acrylate which may be used to form the acrylic polymer that may be included in the adhesive layer. Examples of esters.

On the other hand, examples of the thermosetting functional group in the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxyl group, a hydroxyl group, an isocyanate group, and the like. Among them, glycidyl group and carboxyl group are preferred. That is, as the thermosetting functional group-containing acrylic resin, glycidyl group-containing acrylic resin and carboxyl group-containing acrylic resin are particularly preferred.

Furthermore, it is preferable to contain a curing agent together with the thermosetting functional group-containing acrylic resin. Examples of the curing agent include cross-linking agents that can be included in the radiation-curable adhesive for forming the adhesive layer. . When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol compound as the hardener. For example, the above-mentioned various phenolic resins can be used.

Regarding the adhesive layer before hardening for crystal bonding, in order to achieve a certain degree of cross-linking, for example, it is preferable to react and bond with functional groups at the end of the molecular chain of the resin that may be included in the adhesive layer. A polyfunctional compound is prepared in advance as a crosslinking component in the resin composition for adhesive layer formation. This structure is preferable for the adhesive layer from the viewpoint of improving the adhesive properties at high temperatures and improving the heat resistance.

Examples of the crosslinking component include polyisocyanate compounds. Examples of the polyisocyanate compound include toluene diisocyanate, diphenylmethane diisocyanate, terephthalene diisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyols and diisocyanates. Moreover, as the said crosslinking component, other polyfunctional compounds, such as an epoxy resin, and a polyisocyanate compound may be used together.

The content of the crosslinking component in the resin composition for forming the adhesive layer increases the cohesive force of the formed adhesive layer 20 relative to 100 parts by mass of the resin having the above-mentioned functional group that can react with the crosslinking component and bond. From the viewpoint of improving the adhesive strength of the formed adhesive layer 20, it is preferable that it is 0.05 parts by mass or more. It is preferable that it is 7 parts by mass or less.

The adhesive layer preferably contains a filler. By blending fillers into the adhesive layer, physical properties such as electrical conductivity, thermal conductivity, and elastic modulus of the adhesive layer can be adjusted. Examples of fillers include inorganic fillers and organic fillers, and inorganic fillers are particularly preferred.

As inorganic fillers, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, In addition to crystalline silicon oxide and amorphous silicon oxide, metal monomers such as aluminum, gold, silver, copper, and nickel, or alloys, amorphous carbon black, graphite, and the like can also be used. Fillers may also have various shapes such as spherical, needle-like, and flaky shapes. As the above-mentioned filler, only one type may be used, or two or more types may be used.

The average particle size of the above-mentioned filler is preferably 0.005-10 μm, more preferably 0.005-1 μm. If the average particle diameter is 0.005 μm or more, the wettability and adhesion to adherends such as semiconductor wafers will be further improved. When the average particle diameter is 10 μm or less, the effect of the filler added to provide the above characteristics can be fully achieved, and heat resistance can be ensured. In addition, the average particle diameter of the filler can be determined using, for example, a brightness type particle size distribution meter (for example, trade name "LA-910"; manufactured by Horiba Manufacturing Co., Ltd.).

The adhesive layer may also contain other components if necessary. Examples of the other components include curing catalysts, flame retardants, silane coupling agents, ion trapping agents, dyes, and the like. Only one type of the above-mentioned other additives may be used, or two or more types may be used.

Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like.

Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethoxysilane. Diethoxysilane, etc.

Examples of the ion trapping agent include aluminum magnesium carbonates, bismuth hydroxide, hydrous antimony oxide (such as "IXE-300" manufactured by Toagosei Co., Ltd.), and zirconium phosphate with a specific structure (such as "IXE-300" manufactured by Toagosei Co., Ltd.). "IXE-100"), magnesium silicate (such as "KYOWAAD 600" manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (such as "KYOWAAD 700" manufactured by Kyowa Chemical Industry Co., Ltd.), etc.

Compounds that can form complexes with metal ions can also be used as ion trapping agents. Examples of such compounds include triazole compounds, tetrazole compounds, and bipyridine compounds. Among these, from the viewpoint of the stability of the complex formed with the metal ion, a triazole compound is preferred.

Examples of the triazole-based compound include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, and carboxybenzotriazole. Azole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylphenyl) Benzotriazole, 2-(2-hydroxy-5-tertiary octylphenyl)benzotriazole, 6-(2-benzotriazolyl)-4-tertiary octyl-6'-tertiary Butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2',3'-hydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl )benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-tertiary amyl-6-{(H-benzotriazole-1-yl) Methyl}phenol, 2-(2-hydroxy-5-tert-butylphenyl)-2H-benzotriazole, 3-(2H-benzotriazol-2-yl)-5-(1,1 -Dimethylethyl)-4-hydroxy, octyl-3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl] Propionate, 2-ethylhexyl-3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2 -(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2 -(2H-benzotriazol-2-yl)-4-tert-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-5- 3-Octylphenyl)-benzotriazole, 2-(3-tert-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy- 3,5-Di-tert-pentylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole, 2-[ 2-Hydroxy-3,5-bis(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazole) -2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol], 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)benzene base]-2H-benzotriazole, methyl-3-[3-(2H-benzotriazol-2-yl)-5-tert-butyl-4-hydroxyphenyl]propionate, etc.

In addition, specific hydroxyl-containing compounds such as hydroquinone compounds, hydroxyanthraquinone compounds, and polyphenol compounds can also be used as ion trapping agents. Specific examples of such hydroxyl-containing compounds include 1,2-benzenediol, alizarin, anthracenol, tannin, gallic acid, methyl gallate, gallic acid, and the like.

The thickness of the adhesive layer (total thickness in the case of a laminate) is not particularly limited, but is, for example, 1 to 200 μm. The upper limit is preferably 100 μm, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm.

In the die-cut die-bonding film, as mentioned above, the peeling force between the above-mentioned adhesive layer and the above-mentioned adhesive layer in the T-type peel test at a temperature of 23°C and a peeling speed of 300 mm/min is 0.3 N. /20 mm or more, preferably 0.5 N/20 mm or more, more preferably 0.7 N/20 mm or more. If the above-mentioned peeling force is 0.3 N/20 mm or more, the adhesion between the adhesive layer and the adhesive layer can be moderated, thereby suppressing the stretching step and subsequent peeling between the adhesive layer and the adhesive layer. (floating). In addition, the higher the above-mentioned peeling force, the better, but the upper limit may be, for example, 10 N/20 mm, 5.0 N/20 mm, or 3.0 N/20 mm. In addition, the above-mentioned peeling force of the adhesive layer before radiation hardening is the above-mentioned value.

The T-shaped peel test was performed using a tensile testing machine (trade name "Autograph AGS-J"; manufactured by Shimadzu Corporation). The specimen piece used for this test can be produced as follows. After laminating the backing tape (trade name "BT-315"; manufactured by Nitto Denko Co., Ltd.) to the adhesive layer side of the die-cut die-attach film, a test piece with a width of 50 mm and a length of 120 mm was cut out.

The die-cut die-bonding film may also include spacers. Specifically, each die-cut die-adhesive film may be in the form of a sheet including a spacer, or the separator may be in the form of a long strip, with a plurality of die-cut die-adhesive films arranged thereon and the separator may be wound. Take the form of a roller. The spacer is an element used to cover and protect the surface of the adhesive layer of the die-cut die-bonding film, and is peeled off from the die-cut die-bonding film when the die-cut die-bonding film is used. Examples of the separator include polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, and surface coating with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent. The resulting plastic film or paper, etc. The thickness of the spacer is, for example, 5 to 200 μm.

The die-cut die-bonding film 1 which is one embodiment of the die-cut die-bonding film of the present invention is produced in the following manner, for example.

First, the substrate 11 can be obtained by forming a film using a known or conventional film forming method. Examples of the film forming method include calendering film forming method, casting method in organic solvent, inflation extrusion method in closed system, T-die extrusion method, co-extrusion method, dry lamination method, etc. .

Next, an adhesive layer-forming composition (adhesive composition) including an adhesive and a solvent for forming the adhesive layer 12 is applied on the base material 11 to form a coating film, and then, if necessary, the adhesive layer is formed by stripping. The coating film is solidified by solvent or hardening, and the adhesive layer 12 can be formed. Examples of the coating method include known or commonly used coating methods such as roll coating, screen coating, and gravure coating. Moreover, as desolvation conditions, for example, the temperature is in the range of 80 to 150° C. and the time is in the range of 0.5 to 5 minutes.

Alternatively, after the adhesive composition is coated on the separator to form a coating film, the coating film may be solidified under the above-mentioned desolvation conditions to form the adhesive layer 12 . Thereafter, the adhesive layer 12 and the spacer are bonded to the base material 11 . In the above manner, the dicing tape 10 can be produced.

Regarding the adhesive layer 20, first, a composition for forming the adhesive layer 20 (adhesive composition) containing a resin, a filler, a curing catalyst, a solvent, etc. is prepared. Next, after the adhesive composition is applied on the separator to form a coating film, the coating film is cured by desolvation or hardening as necessary to form the adhesive layer 20 . The coating method is not particularly limited, and examples thereof include known or commonly used coating methods such as roll coating, screen coating, and gravure coating. In addition, as desolvation conditions, for example, the temperature is in the range of 70 to 160° C. and the time is in the range of 1 to 5 minutes.

Then, the spacer is peeled off from the wafer tape 10 and the adhesive layer 20 respectively, and the adhesive layer 20 and the adhesive layer 12 are bonded together so that they become bonding surfaces. Bonding can be performed by pressure bonding, for example. At this time, the lamination temperature is not particularly limited, but for example, 30 to 50°C is preferred, and 35 to 45°C is more preferred. In addition, the linear pressure is not particularly limited, but for example, 0.1 to 20 kgf/cm is preferred, and 1 to 10 kgf/cm is more preferred.

As described above, when the adhesive layer 12 is a radiation-hardening adhesive layer, when the adhesive layer 12 is irradiated with radiation such as ultraviolet rays after the adhesive layer 20 is bonded, for example, the adhesive layer 12 is irradiated from the side of the base material 11 The layer 12 is irradiated with radiation, and the irradiation dose is, for example, 50 to 500 mJ, preferably 100 to 300 mJ. The area of the die-cut die-bonding film 1 that is irradiated as a measure to reduce the adhesive force of the adhesive layer 12 (irradiation area R) is usually the area within the bonding area of the adhesive layer 20 in the adhesive layer 12 excluding its peripheral portion. area. When the irradiation area R is partially provided, this can be done by forming a mask corresponding to the pattern of the area other than the irradiation area R. Alternatively, a method of irradiating radiation in a point-like manner to form the irradiation region R may be used.

In the above manner, for example, the die-cut die-bonding film 1 shown in Figure 1 can be produced.

[Method for manufacturing semiconductor device] Semiconductor devices can be manufactured using the die-cut die-bonding film of the present invention. Specifically, a semiconductor device can be manufactured by a manufacturing method including the following steps: attaching a semiconductor wafer including a plurality of semiconductor wafers on the above-mentioned adhesive layer side of the die-cut die-attach film of the present invention segmented body, or a semiconductor wafer that can be singulated into a plurality of semiconductor wafers (there is a situation called "step A"); under relatively low temperature conditions, the die-cut die-bonding film of the present invention is The wafer tape is extended to cut at least the above-mentioned adhesive layer to obtain a semiconductor wafer with the adhesive layer attached (there is a situation called "step B"); under relatively high temperature conditions, the above-mentioned dicing tape is stretched to obtain a semiconductor wafer with an adhesive layer attached. The distance between the semiconductor wafers with the adhesive layer attached is expanded (a situation called "step C" exists); and the semiconductor wafers with the adhesive layer attached are picked up (a situation called "step D" occurs).

The divided body of the above-mentioned semiconductor wafer containing a plurality of semiconductor wafers used in step A, or the semiconductor wafer that can be singulated into a plurality of semiconductor wafers can be obtained in the following manner. First, as shown in FIGS. 2(a) and 2(b) , division trenches 30a are formed in the semiconductor wafer W (division trench forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the side of the first surface Wa in the semiconductor wafer W, and wiring structures required for the semiconductor elements (not shown) have been formed on the first surface Wa (not shown).

Next, after the wafer processing tape T1 having the adhesive surface T1a is attached to the second surface Wb side of the semiconductor wafer W, with the semiconductor wafer W held on the wafer processing tape T1, a wafer cutting machine is used The rotating blade of the device forms a dividing groove 30a of a specific depth on the first surface Wa side of the semiconductor wafer W. The dividing grooves 30a are gaps for separating the semiconductor wafer W into semiconductor wafer units (the dividing grooves 30a are schematically represented by thick solid lines in FIGS. 2 to 4 ).

Next, as shown in FIG. 2(c) , the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape is peeled off from the semiconductor wafer W. T1.

Next, as shown in FIG. 2(d) , with the semiconductor wafer W held by the wafer processing tape T2, the semiconductor wafer W is thinned to a specific thickness by polishing from the second surface Wb. thickness (wafer thinning step). Grinding processing can be performed using a grinding processing device equipped with a grinding wheel. Through this wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers 31 is formed.

Specifically, the semiconductor wafer 30A has a portion (connection portion) that connects portions of the wafer that are singulated into a plurality of semiconductor wafers 31 on the second surface Wb side. The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the front end of the second surface Wb side of the dividing groove 30a is, for example, 1 to 30 μm, preferably 3 to 20 μm. .

(Step A) In step A, a divided body of a semiconductor wafer including a plurality of semiconductor wafers, or a semiconductor wafer that can be singulated into a plurality of semiconductor wafers is attached to the adhesive layer 20 side of the die attach film 1 .

In one embodiment of step A, as shown in FIG. 3(a) , the adhesive layer 20 of the bisection die attach film 1 is adhered to the semiconductor wafer 30A held by the wafer processing tape T2. Thereafter, as shown in FIG. 3(b) , the wafer processing tape T2 is peeled off from the semiconductor wafer 30A.

When the adhesive layer 12 in the die-cut die-attach film 1 is a radiation-hardening adhesive layer, after the semiconductor wafer 30A is bonded to the adhesive layer 20, the adhesive can be applied from the side of the base material 11. The layer 12 is irradiated with radiation such as ultraviolet rays instead of the above-mentioned radiation irradiation during the manufacturing process of the die-cut die-bonding film 1 . The irradiation dose is, for example, 50 to 500 mJ/cm ² , preferably 100 to 300 mJ/cm ² . The area of the die-cut die-bonding film 1 that is irradiated as a measure to reduce the adhesive force of the adhesive layer 12 (the irradiation area R shown in FIG. 1 ) is, for example, the area where the adhesive layer 20 in the adhesive layer 12 is bonded. The area outside its peripheral edge.

(Step B) In step B, under relatively low temperature conditions, the die cutting tape 10 in the die die attach film 1 is extended to at least cut the adhesive layer 20 to obtain a semiconductor wafer with the adhesive layer attached.

In one embodiment of step B, first, the annular frame 41 is attached to the adhesive layer 12 of the die tape 10 in the die adhesion film 1, and then as shown in Figure 4(a), The die-cut die attach film 1 with the semiconductor wafer 30A is fixed to the holder 42 of the extension device.

Then, as shown in FIG. 4(b) , a first stretching step (cooling stretching step) is performed under relatively low temperature conditions to singulate the semiconductor wafer 30A into a plurality of semiconductor wafers 31, and the cut wafers are bonded. The adhesive layer 20 of the crystal film 1 is cut into small pieces of adhesive layer 21, thereby obtaining a semiconductor wafer 31 with an adhesive layer attached.

In the cooling and stretching step, the hollow cylindrical lifting member 43 of the stretching device is brought into contact with the dicing tape 10 on the lower side of the dicing die bonding film 1 in the figure and raised, so that the semiconductor wafer will be bonded thereto. The dicing tape 10 of the 30A die die attach film 1 is stretched in a two-dimensional direction including the diameter direction and the circumferential direction of the semiconductor wafer 30A.

This stretching is performed under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa, is generated in the dicing tape 10 . The temperature condition in the cooling and stretching step is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and still more preferably -15°C. The extension speed (the speed at which the lifting member 43 is raised) in the cooling extension step is preferably 0.1 to 100 mm/second. In addition, the stretching amount in the cooling stretching step is preferably 3 to 16 mm.

In step B, when a semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers is used, a cut occurs in a portion of the semiconductor wafer 30A that is thin and prone to cracking, resulting in a single piece of the semiconductor wafer 31 . change. At the same time, in step B, deformation is suppressed in each region of the adhesive layer 20 in close contact with the adhesive layer 12 of the extended dicing tape 10 where each semiconductor wafer 31 is in close contact. On the other hand, the semiconductor wafer 31 The portion of the dividing groove located in the vertical direction in the figure does not have such deformation inhibiting effect. In this state, the tensile stress is generated in the dicing tape 10. As a result, in the adhesive layer 20 , the portions of the dividing grooves between the semiconductor wafers 31 located in the vertical direction are cut. After cutting by stretching, as shown in FIG. 4(c) , the lifting member 43 is lowered to release the stretched state of the dicing tape 10 .

(Step C) In step C, the dicing tape 10 is stretched under relatively high temperature conditions to expand the distance between the semiconductor wafers attached with the adhesive layer.

In one embodiment of step C, first, as shown in FIG. 5(a) , a second stretching step (normal temperature stretching step) is performed under relatively high temperature conditions, and the semiconductor wafer 31 with the adhesive layer is attached thereto. The distance (distance) increases.

In step C, the hollow cylindrical lifting member 43 of the extending device is raised again to extend the die-cutting tape 10 of the die-cutting die-adhesive film 1 . The temperature condition in the second stretching step is, for example, 10°C or higher, preferably 15 to 30°C. The extension speed (the speed at which the lifting member 43 is raised) in the second extension step is, for example, 0.1 to 10 mm/second, preferably 0.3 to 1 mm/second. Moreover, the stretching amount in the second stretching step is, for example, 3 to 16 mm. In step C, the distance between the semiconductor wafers 31 with the adhesive layer is expanded to such an extent that the semiconductor wafers 31 with the adhesive layer can be properly picked up from the dicing tape 10 in the following pick-up step. After the separation distance is expanded by stretching, as shown in FIG. 5(b) , the lifting member 43 is lowered to release the stretched state of the dicing tape 10 .

From the viewpoint of preventing the distance between the semiconductor wafers 31 with the adhesive layer on the dicing tape 10 from becoming narrower after the extended state is released, it is preferable to separate the semiconductor wafers 31 in the dicing tape 10 before releasing the extended state. The outer portion of the holding area is heated to cause it to shrink.

After step C, if necessary, there may also be a cleaning step of using a cleaning solution such as water to clean the semiconductor wafer 31 side of the dicing tape 10 of the semiconductor wafer 31 with the adhesive layer.

(Step D) In step D (picking up step), the semiconductor wafer with the adhesive layer attached thereto is picked up. In one embodiment of step D, after going through the above cleaning step if necessary, as shown in FIG. 6 , the semiconductor wafer 31 with the adhesive layer attached is picked up from the dicing tape 10 . For example, for the semiconductor wafer 31 with the adhesive layer attached to be picked up, the pin member 44 of the pickup mechanism is raised on the lower side of the dicing tape 10 in the figure and is lifted up by the dicing tape 10 , and then is adsorbed by the adsorption jig 45 Keep. In the picking step, the lifting speed of the pin member 44 is, for example, 1 to 100 mm/second, and the lifting amount of the pin member 44 is, for example, 50 to 3000 μm.

The above-mentioned manufacturing method of a semiconductor device may also include other steps in addition to steps A to D. For example, in one embodiment, as shown in FIG. 7(a) , the picked-up semiconductor chip 31 with an adhesive layer attached is temporarily bonded to the adherend 51 via the adhesive layer 21 (temporary bonding step).

Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately produced semiconductor wafer. The shear bonding force at 25°C when the adhesive layer 21 is temporarily bonded relative to the adherend 51 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa. The structure in which the above-mentioned shear bonding force of the adhesive layer 21 is 0.2 MPa or more can suppress the occurrence of ultrasonic vibration or heating on the bonding surface between the adhesive layer 21 and the semiconductor wafer 31 or the adherend 51 during the wire bonding step described below. Shear deformation for proper wire bonding. In addition, the shear bonding force at 175°C when the adhesive layer 21 is temporarily bonded is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa, relative to the adherend 51 .

Next, as shown in FIG. 7( b ), the electrode pads (not shown) of the semiconductor chip 31 and the terminal portions (not shown) of the adherend 51 are electrically connected via the bonding wires 52 (wire bonding step) .

The connection between the electrode pads of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wire 52 can be achieved by ultrasonic welding accompanied by heating without thermally hardening the adhesive layer 21 . As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, etc. can be used. The wire heating temperature in wire bonding is, for example, 80 to 250°C, preferably 80 to 220°C. Moreover, the heating time is several seconds to several minutes.

Next, as shown in FIG. 7( c ), the semiconductor chip 31 is sealed with the sealing resin 53 for protecting the semiconductor chip 31 or the bonding wire 52 on the adherend 51 (sealing step).

In the sealing step, thermal hardening of the adhesive layer 21 proceeds. In the sealing step, the sealing resin 53 is formed, for example, by a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, epoxy resin can be used. In the sealing step, the heating temperature used to form the sealing resin 53 is, for example, 165-185°C, and the heating time is, for example, 60 seconds to several minutes.

When hardening of the sealing resin 53 does not proceed sufficiently in the sealing step, a subsequent hardening step for completely hardening the sealing resin 53 is performed after the sealing step. Even if the adhesive layer 21 is not completely thermally cured in the sealing step, the adhesive layer 21 can be completely thermally cured together with the sealing resin 53 in the subsequent curing step. In the subsequent hardening step, the heating temperature is, for example, 165-185°C, and the heating time is, for example, 0.5-8 hours.

In the above embodiment, after the semiconductor chip 31 with the adhesive layer is temporarily bonded to the adherend 51 as described above, the wire bonding step is performed without completely thermally curing the adhesive layer 21 . Alternatively to this configuration, in the above-mentioned manufacturing method of a semiconductor device, the semiconductor chip 31 with the adhesive layer attached thereto may be temporarily bonded to the adherend 51 , and the wire bonding step may be performed after the adhesive layer 21 is thermally hardened.

In the above method for manufacturing a semiconductor device, as another embodiment, the wafer thinning step shown in FIG. 8 may be performed instead of the wafer thinning step described above with reference to FIG. 2(d). After the process described above with reference to FIG. 2(c), in the wafer thinning step shown in FIG. 8, the semiconductor wafer W is held in the state of the wafer processing tape T2. The circle is thinned by grinding from the second surface Wb until it reaches a specific thickness, thereby forming a semiconductor wafer divided body 30B including a plurality of semiconductor wafers 31 and held on the wafer processing tape T2.

In the above wafer thinning step, the method of grinding the wafer until the dividing groove 30a is exposed on the second surface Wb side (first method) can be used, or the following method (second method) can be used: from the second surface Wb The wafer is side-grinded until it reaches the dividing groove 30a. Afterwards, the squeezing force of the rotating grinding wheel on the wafer causes cracks to be generated between the dividing groove 30a and the second surface Wb to form the semiconductor wafer divided body 30B. . The depth from the first surface Wa of the dividing groove 30a formed in the above manner with reference to FIGS. 2(a) and 2(b) is appropriately determined depending on the method used.

In FIG. 8 , the dividing grooves 30 a passing through the first method or the dividing grooves 30 a passing the second method and the cracks connected to the dividing grooves are schematically represented by thick solid lines. In the above manufacturing method of a semiconductor device, in step A, the semiconductor wafer divided body 30B produced in this way can also be used as a semiconductor wafer divided body instead of the semiconductor wafer 30A, and then refer to FIGS. 3 to 7 as above. The article describes each step.

9(a) and 9(b) illustrate step B in this embodiment, that is, the first stretching step (cooling stretching step) performed after bonding the semiconductor wafer divided body 30B to the die-cut die attach film 1 .

In step B in this embodiment, the hollow cylindrical lifting member 43 of the stretching device is brought into contact with the die-cutting tape 10 on the lower side of the die-cutting adhesive film 1 in the figure and rises, thereby bonding the die-cutting tape 10 . The dicing tape 10 having the die attach film 1 of the semiconductor wafer divided body 30B is stretched in a two-dimensional direction including the diameter direction and the circumferential direction of the semiconductor wafer divided body 30B.

This stretching is performed under conditions that generate a tensile stress in the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa, in the dicing tape 10 . The temperature condition in the cooling and stretching step is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and still more preferably -15°C. The extension speed (the speed at which the lifting member 43 is raised) in the cooling extension step is preferably 1 to 400 mm/second. In addition, the stretching amount in the cooling stretching step is preferably 50 to 200 mm.

Through this cooling and stretching step, the adhesive layer 20 of the die-cut die-bonding film 1 is cut into small pieces of adhesive layer 21 to obtain a semiconductor wafer 31 with an adhesive layer attached. Specifically, in the cooling and elongation step, each region of each semiconductor wafer 31 in which the semiconductor wafer divided body 30B is in close contact with the adhesive layer 20 of the extended dicing tape 10 is deformed. On the other hand, the portion of the dividing groove 30a between the semiconductor wafers 31 located in the vertical direction in the figure does not have such a deformation suppressing effect. In this state, the tensile stress is generated in the dicing tape 10. As a result, the portion of the dividing groove 30a between the semiconductor wafers 31 in the adhesive layer 20 located in the vertical direction in the figure is cut.

In the above method of manufacturing a semiconductor device, as another embodiment, a semiconductor wafer 30C produced in the following manner may be used instead of the semiconductor wafer 30A or the semiconductor wafer divided body 30B used in step A.

In this embodiment, as shown in FIGS. 10(a) and 10(b) , first, the modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the side of the first surface Wa in the semiconductor wafer W, and wiring structures required for the semiconductor elements (not shown) have been formed on the first surface Wa (not shown).

Next, after the wafer processing tape T3 having the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, the light is collected while the semiconductor wafer W is held by the wafer processing tape T3. The laser light inside the point-aligned wafer is irradiated from the side opposite to the wafer processing tape T3 along the pre-dividing line to the semiconductor wafer W, and modification is formed in the semiconductor wafer W by ablation using multi-photon absorption. Area 30b. The modified region 30b is a weakened region used to separate the semiconductor wafer W into semiconductor wafer units.

A method of forming the modified region 30b on a pre-dividing line in a semiconductor wafer by laser light irradiation is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. However, the laser light irradiation conditions in this embodiment are, for example, Make appropriate adjustments within the following conditions.

<Laser light irradiation conditions> (A) Laser light laser light source Semiconductor laser excitation Nd: YAG (Neodymium-doped Yttrium Aluminum Garnet, Neodymium-doped Yttrium Aluminum Garnet) Laser wavelength 1064 nm Laser spot cross-sectional area 3.14×10 ^{- 8} cm ² Oscillation form Q-switch pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM (transverse electromagnetic wave, transverse electromagnetic wave) 00 Polarization characteristics Linear polarization (B) Condensing lens magnification 100 times or less NA (numerical aperture, numerical aperture) 0.55 The transmittance of the laser light wavelength is 100% or less (C) The moving speed of the mounting table for mounting the semiconductor substrate is 280 mm/second or less

Next, as shown in FIG. 10(c) , with the semiconductor wafer W held by the wafer processing tape T3, the semiconductor wafer W is thinned to a specific thickness by polishing from the second surface Wb. By this, a semiconductor wafer 30C that can be singulated into a plurality of semiconductor wafers 31 is formed (wafer thinning step).

In the above method of manufacturing a semiconductor device, in step A, the semiconductor wafer 30C produced in this manner can also be used as a semiconductor wafer that can be singulated to replace the semiconductor wafer 30A, and then the process is performed with reference to FIGS. 3 to 7 . The steps described above.

11(a) and 11(b) illustrate step B in this embodiment, that is, the first stretching step (cooling stretching step) performed after bonding the semiconductor wafer 30C to the die attach film 1.

In the cooling and stretching step, the hollow cylindrical lifting member 43 of the stretching device is brought into contact with the dicing tape 10 on the lower side of the dicing die bonding film 1 in the figure and raised, so that the semiconductor wafer will be bonded thereto. The dicing tape 10 of the 30C die attach film 1 is stretched in a two-dimensional direction including the diameter direction and the circumferential direction of the semiconductor wafer 30C. This stretching is performed under conditions that generate a tensile stress in the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa, in the dicing tape 10 . The temperature condition in the cooling and stretching step is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and still more preferably -15°C. The extension speed (the speed at which the lifting member 43 is raised) in the cooling extension step is preferably 1 to 400 mm/second. In addition, the stretching amount in the cooling stretching step is preferably 50 to 200 mm.

Through this cooling and stretching step, the adhesive layer 20 of the die-cut die-bonding film 1 is cut into small pieces of adhesive layer 21 to obtain a semiconductor wafer 31 with an adhesive layer attached. Specifically, in the cooling and elongation step, cracks are formed in the fragile modified region 30b in the semiconductor wafer 30C, thereby causing the semiconductor wafer 31 to be singulated. At the same time, in the cooling and extending step, deformation is suppressed in each region of each semiconductor wafer 31 in the adhesive layer 20 that is closely connected to the adhesive layer 12 of the stretched dicing tape 10, and the semiconductor wafer 30C is closely connected. On the other hand, such a deformation-inhibiting effect does not occur in the portion where the crack is formed on the wafer, which is located in the vertical direction in the figure. In this state, tensile stress is generated in the dicing tape 10 . As a result, the crack formation portion between the semiconductor wafers 31 in the adhesive layer 20 is cut off in the vertical direction in the figure.

In addition, in the above-mentioned manufacturing method of a semiconductor device, the die-cut die-bonding film 1 can be used to obtain a semiconductor wafer with an adhesive layer attached in the above-mentioned manner, and can also be used when a plurality of semiconductor wafers are stacked for three-dimensional mounting. The use of obtaining semiconductor wafers with adhesive layers attached. In such three-dimensional mounting, spacers may be interposed between the semiconductor chips 31 together with the adhesive layer 21 , or no spacers may be interposed. [Example]

Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples in any way. Furthermore, Table 1 shows the composition of each monomer component constituting the acrylic polymer _P2 in the adhesive layer in the Examples and Comparative Examples. Among them, in Table 1, regarding the unit of each numerical value indicating the composition of the composition, the numerical value related to the monomer component is relative to "mol", and the numerical value related to each component except the monomer component is relative to "mol". The "mass part" of 100 mass parts of this acrylic polymer _P2 .

Example 1 (Crystal Cutting Tape) In a reaction vessel equipped with a cooling tube, a nitrogen inlet tube, a thermometer, and a stirring device, 100 moles of 2-ethylhexyl acrylate (2EHA), 2-hydroxyethyl acrylate ( A mixture of 20 moles of HEA), 2 parts by mass of benzoyl peroxide as the polymerization initiator, and toluene as the polymerization solvent relative to 100 parts by mass of the total amount of these monomer components, at 61°C, at Stir under nitrogen atmosphere for 6 hours (polymerization reaction). Thereby, a polymer solution containing acrylic polymer _P1 was obtained.

Then, a solution containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was prepared. The mixture was stirred at 50°C under air atmosphere for 48 hours (addition reaction). In this reaction solution, the amount of MOI prepared was 16 moles. Moreover, in this reaction solution, the compounding quantity of dibutyl tin dilaurate was 0.01 mass part with respect to 100 mass parts of acrylic polymer _P1 . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in a side chain (an acrylic polymer containing a structural unit derived from an isocyanate compound containing an unsaturated functional group) is obtained. .

Next, to this polymer solution, ₂ parts by mass of a polyisocyanate compound (trade name "Coronate L"; manufactured by Tosoh Co., Ltd.) and 2 parts by mass were added based on 100 parts by mass of the acrylic polymer P2. Photopolymerization initiator (trade name "Irgacure 127"; manufactured by BASF) was mixed, and toluene was added to the mixture to dilute it so that the viscosity of the mixture at room temperature became 500 mPa·s to obtain an adhesive. composition.

Then, using an applicator, the adhesive composition is applied to the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface to form an adhesive composition layer. . Then, the composition layer was desolvated by heating at 120° C. for 2 minutes, thereby forming an adhesive layer with a thickness of 10 μm on the PET separator.

Then, using a laminating machine, an EVA resin film (thickness: 125 μm; manufactured by Nitto Denko Co., Ltd.) as a base material was bonded to the exposed surface of the adhesive layer at room temperature. The bonded body was then stored at 50° C. for 24 hours. The dicing tape of Example 1 was produced in the above manner.

(Adhesive layer) To methyl ethyl ketone were added 100 parts by mass of acrylic polymer A ₁ (trade name "TEISANRESIN SG-P3", manufactured by Nagase Chemical Co., Ltd.) and solid phenol resin (trade name "MEHC- 7851SS"; solid at 23°C; manufactured by Meiwa Kasei Co., Ltd.) 12 parts by mass, and 100 parts by mass of silica filler (trade name "SO-C2"; average particle size: 0.5 μm; manufactured by Admatechs Co., Ltd.) The mixture was mixed and the concentration was adjusted so that the solid content concentration became 18% by mass, thereby obtaining an adhesive composition.

Next, using an applicator, the adhesive composition was applied to the silicone release-treated surface of a PET separator (thickness 50 μm) having a silicone release-treated surface to form a coating film, and then the The coating film was desolvated at 130°C for 2 minutes. In the above manner, an adhesive layer with a thickness of 15 μm in Example 1 was formed on the PET separator.

(Preparation of crystal-cut crystal adhesive film) The PET separator was peeled off from the dicing tape of Example 1, and then the adhesive layer of Example 1 was bonded to the exposed adhesive layer. Use a hand roller for fit. In this way, the die-cut die-bonding film of Example 1 was produced.

Examples 2 to 17 and Comparative Examples 1 to 9 In the preparation of the adhesive layer, as shown in Tables 1 and 2, the monomer composition to form the acrylic polymer P ₁ , the compounding amount of MOI, and the photopolymerization initiator were changed. Except for the type or blending amount of the polyisocyanate compound, the die cutting tape and the die cutting adhesive film were produced in the same manner as in Example 1.

Furthermore, in Tables 1 and 2, "EA" represents ethyl acrylate, "BA" represents butyl acrylate, "2MEA" represents 2-methoxyethyl acrylate, and "4HBA" represents 4-hydroxybutyl acrylate. "AM" represents acrylomorpholine, "Irgacure 184" represents the trade name "Irgacure 184" (manufactured by BASF Corporation), "Irgacure 651" represents the trade name "Irgacure 651" (manufactured by BASF Corporation), and "Irgacure 369" represents the trade name "Irgacure 369" (manufactured by BASF Corporation), "Irgacure 2959" represents the trade name "Irgacure 2959" (manufactured by BASF Corporation), and "Coronate HL" represents the trade name "Coronate HL" (manufactured by Tosoh Corporation).

＜Evaluation＞ The following evaluations were performed on the die-cut die-bonding films obtained in Examples and Comparative Examples. The results are shown in Table 1.

(Hardness measured using nanoindentation method) For each of the die-cut die-bonding films obtained in the Examples and Comparative Examples, the adhesive layer was peeled off from the adhesive layer, and a nanoindentation instrument (trade name "TriboIndenter") was used on the peeled surface of the adhesive layer. ; manufactured by HYSITRON Inc.), conduct nanoindentation measurement on the surface of the adhesive layer under the following conditions. Moreover, the obtained hardness is shown in Table 1. Indenter used: Berkovich (triangular pyramid type) Measuring method: single intrusion measurement Measuring temperature: 23℃ Frequency: 100 Hz Pressing depth setting: 500 nm Load: 1 mN, Load speed: 0.1 mN/s Unloading speed: 0.1 mN/s Hold time: 1 s

(T-type peel test) For each of the die-cut die-bonding films obtained in the Examples and Comparative Examples, the peeling force between the adhesive layer and the adhesive layer was studied in the following manner. First, test pieces were produced from each of the crystal-bonded films. Specifically, a backing tape (trade name "BT-315"; manufactured by Nitto Denko Co., Ltd.) is bonded to the adhesive layer side of the die-cut die-bonding film, and then the die-cut die-bonding film with the backing tape is removed. Cut a test piece with a width of 50 mm and a length of 120 mm from the film. Next, a T-shaped peel test was performed on the test piece using a tensile testing machine (trade name "Autograph AGS-J"; manufactured by Shimadzu Corporation) to measure the peeling force (N/20 mm). In this measurement, the temperature condition was set to 23°C, and the peeling speed was set to 300 mm/min. The measurement results are shown in the table.

(Lifting of semiconductor wafer with adhesive layer attached) Using the brand name "ML300-Integration" (manufactured by Tokyo Precision Co., Ltd.) as a laser processing device, the focus point is aligned with the inside of a 12-inch semiconductor wafer. Laser light is irradiated along the lattice-shaped (10 mm×10 mm) pre-divided lines to form a modified region inside the semiconductor wafer. The irradiation of laser light is performed under the following conditions. (A) Laser light source Semiconductor laser excitation Nd: YAG Laser wavelength 1064 nm Laser spot cross-sectional area 3.14×10 ^-8 cm ² Oscillation form Q-switch pulse repetition frequency 100 kHz Pulse width 30 ns Output 20 μJ/pulse Laser light quality TEM00 40 Polarization characteristics Linear polarization (B) Condensing lens magnification 50 times NA 0.55 Transmittance of laser light wavelength 60% (C) Moving speed of the mounting table holding the semiconductor substrate 100 mm/sec

A method of forming the modified region 30b on a pre-dividing line in a semiconductor wafer by laser light irradiation is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. However, the laser light irradiation conditions in this embodiment are, for example, Make appropriate adjustments within the following conditions.

<Laser light irradiation conditions> (A) Laser light Laser light source Semiconductor laser excitation Nd: YAG Laser wavelength 1064 nm Laser spot cross-sectional area 3.14×10 ^-8 cm ² Oscillation form Q-switch pulse repetition frequency 100 kHz or less Pulse width Output below 1 μs and below 1 mJ Laser light quality TEM00 Polarization characteristics Linear polarization (B) Condensing lens magnification below 100 times NA 0.55 Transmittance of laser light wavelength below 100% (C) Movement of the stage for mounting the semiconductor substrate Speed 280 mm/second or less

After the modified area is formed inside the semiconductor wafer, a protective tape for back grinding is attached to the surface of the semiconductor wafer, and a back grinding machine (trade name "DGP8760"; manufactured by DISCO Co., Ltd.) is used to determine the thickness of the semiconductor wafer. The back surface is ground to 30 μm.

The semiconductor wafer and the die ring formed with the modified region were bonded to the die-cut die-adhesive films obtained in the Examples and Comparative Examples. Next, the semiconductor wafer and the adhesive layer are cut using a die spacer (trade name "DDS2300"; manufactured by DISCO Co., Ltd.). Specifically, first, the semiconductor wafer is cut by cooling and stretching in a cooling stretching unit at a temperature of -15° C., a cooling stretching speed (stretching speed) of 200 mm/second, and an stretching amount of 14 mm. Next, the area of the portion where the adhesive layer floats from the dicing tape (the ratio of the area of the semiconductor wafer to which the adhesive layer is floated when the entire area of the adhesive layer is 100%) is observed under a microscope. Regarding the floating in the cooling and elongation step, if there is no floating or the floating is within the allowable range, the evaluation is ○, and if the floating is obviously present, the evaluation is ×. The results are shown in the table.

After the semiconductor wafer and the adhesive layer are cut, the above-mentioned cooling extension unit is directly used to perform normal temperature extension under the conditions of room temperature, extension speed 1 mm/second, and extension amount 5 mm. Next, the area of the portion where the adhesive layer floats from the dicing tape (the ratio of the area of the semiconductor wafer to which the adhesive layer is floated when the entire area of the adhesive layer is 100%) is observed under a microscope. Regarding the floating in the normal temperature stretching step, if there is no floating or if the floating is within the allowable range, it is evaluated as ○, and if there is obvious floating, it is evaluated as ×. In addition, the floating (floating with time) after stretching at room temperature and left at 23° C. for 30 minutes was also evaluated in accordance with the above evaluation criteria. The results are shown in the table.

[Table 1]

[Table 2]

According to the die-cut die-bonding films of Examples 1 to 17, in the cooling and stretching steps and the room-temperature stretching steps, and further after a period of time, the semiconductor wafer with the adhesive layer does not float from the die-cut tape, and the adhesive layer can be successfully performed. cut off, and in the picking step, the semiconductor wafer with the adhesive layer attached can be properly picked up.

1: Cut crystal bonding film 10:Crystal cutting tape 11:Substrate 12: Adhesive layer 20: Adhesive layer 21: Adhesive layer 30a: Split slot 30A: Semiconductor wafer 30b: Modified area 30B: Semiconductor wafer split body 30C: Semiconductor wafer 31:Semiconductor wafer 41: Ring frame 42:Retainer 43: Jacking up components 44: pin structure 45: Adsorption fixture 51: The connected body 52:Joining wire 53:Sealing resin R: irradiation area T1: Tape for wafer processing T1a: Adhesive surface T2: Tape for wafer processing T2a: Adhesive surface T3: Tape for wafer processing T3a: Adhesive surface W: semiconductor wafer Wa: Side 1 Wb: Side 2

FIG. 1 is a schematic cross-sectional view showing one embodiment of the die-cut die-bonding film of the first invention. FIGS. 2(a) to 2(d) illustrate some steps in a method of manufacturing a semiconductor device using the die-cut die-bonding film shown in FIG. 1 . Figures 3(a) and (b) show steps following the steps shown in Figure 2. Figures 4(a) to (c) show steps following the steps shown in Figure 3. Figures 5(a) and (b) show steps following the steps shown in Figure 4. Figure 6 shows the steps subsequent to those shown in Figure 5. Figures 7 (a) to (c) show steps following the steps shown in Figure 6 . FIG. 8 shows some steps in a modified example of a method of manufacturing a semiconductor device using the die-cut die-attach film shown in FIG. 1 . 9(a) and (b) show some steps in a variation of the method of manufacturing a semiconductor device using the die-cut die-bonding film shown in FIG. 1. FIGS. 10(a) to 10(c) show some steps in a variation of the method of manufacturing a semiconductor device using the die-cut die-bonding film shown in FIG. 1 . 11(a) and (b) illustrate some steps in a modified example of the manufacturing method of a semiconductor device using the die-cut die-bonding film shown in FIG. 1 .

1: Cut crystal bonding film

10:Crystal cutting tape

11:Substrate

12: Adhesive layer

20: Adhesive layer

R: irradiation area

Claims (3)

A die-cutting adhesive film, which includes: a die-cutting tape, which has a laminated structure including a base material and an adhesive layer; and An adhesive layer, which is peelably and tightly connected to the above-mentioned adhesive layer in the above-mentioned dicing tape; The hardness of the surface of the adhesive layer before radiation hardening measured by the nanoindentation method at a temperature of 23°C and a frequency of 100 Hz is 0.04 to 0.8 MPa, and The peeling force between the above-mentioned adhesive layer and the above-mentioned adhesive layer before radiation hardening in the T-shaped peel test at a temperature of 23°C and a peeling speed of 300 mm/min is 0.3 N/20 mm or more. The die-cut die-bonding film of claim 1, wherein the adhesive layer contains a first acrylic polymer, and the first acrylic polymer contains structural units derived from nitrogen atom-containing monomers. The die-cut die-bonding film of claim 2, wherein the structural units derived from nitrogen atom-containing monomers include structural units derived from (meth)acryloylmorpholine.