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TW201816862A - Film for dicing tape-integrated semiconductor back surface and method for manufacturing semiconductor device - Google Patents

Film for dicing tape-integrated semiconductor back surface and method for manufacturing semiconductor device Download PDF

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Publication number
TW201816862A
TW201816862A TW106125058A TW106125058A TW201816862A TW 201816862 A TW201816862 A TW 201816862A TW 106125058 A TW106125058 A TW 106125058A TW 106125058 A TW106125058 A TW 106125058A TW 201816862 A TW201816862 A TW 201816862A
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film
adhesive layer
dicing tape
semiconductor back
back surface
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TW106125058A
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Chinese (zh)
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木村龍一
杉村敏正
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日商日東電工股份有限公司
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Publication of TW201816862A publication Critical patent/TW201816862A/en

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    • H10P72/7402—
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08—Homopolymers or copolymers of acrylic acid esters
    • H10P72/0428—
    • H10P72/0442—
    • H10W74/012—
    • H10W74/15—
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H10P72/7416—
    • H10W90/724—

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  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

本發明提供一種能夠減少刀片切割時於晶片側面產生之龜裂之切割帶一體型半導體背面用膜。 本發明之切割帶一體型半導體背面用膜具備：具有基材及形成於基材上之黏著劑層之切割帶、及形成於切割帶之黏著劑層上之覆晶型半導體背面用膜，且黏著劑層之紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa。The present invention provides a dicing tape-integrated semiconductor backside film capable of reducing cracks generated on the side of a wafer during dicing by a blade. The dicing tape-integrated semiconductor back film of the present invention includes: a dicing tape having a base material and an adhesive layer formed on the base material; and a film-type semiconductor back film formed on the adhesive layer of the dicing tape; and The tensile elastic modulus of the adhesive layer at 23 ° C after ultraviolet irradiation is 1 MPa to 200 MPa.

Description

切割帶一體型半導體背面用膜、及半導體裝置之製造方法Film for dicing tape-integrated semiconductor back surface and method for manufacturing semiconductor device

本發明係關於一種切割帶一體型半導體背面用膜、及半導體裝置之製造方法。The present invention relates to a dicing tape-integrated semiconductor back film and a method for manufacturing a semiconductor device.

近年來，更進一步要求半導體裝置及其封裝體之薄型化、小型化。因此，作為半導體裝置及其封裝體，廣泛利用將半導體晶片等半導體元件覆晶連接於基板上而成之覆晶型之半導體裝置。該覆晶連接係以半導體晶片之電路面與基板之電極形成面對向之形態進行固定。此種半導體裝置等存在藉由覆晶型半導體背面用膜保護半導體晶片之背面，防止半導體晶片之損傷等之情形。 先前，存在將此種覆晶型半導體背面用膜貼合於切割帶上製成一體型之切割帶一體型半導體背面用膜(例如參照專利文獻1)。 作為使用切割帶一體型半導體背面用膜之半導體裝置之製造方法，已知有於覆晶型半導體背面用膜上貼合晶圓後，利用刀片切割晶圓之方法。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2014-175548號公報In recent years, thinner and smaller semiconductor devices and packages have been required. Therefore, as a semiconductor device and its package, a flip-chip type semiconductor device in which a semiconductor element such as a semiconductor wafer is flip-chip connected to a substrate is widely used. The flip-chip connection is fixed in such a manner that the circuit surface of the semiconductor wafer and the electrode of the substrate face each other. In such semiconductor devices, the back surface of a semiconductor wafer is protected by a film for a flip-chip semiconductor back surface to prevent damage to the semiconductor wafer and the like. Conventionally, there has been a dicing tape-integrated semiconductor back film formed by bonding such a film-type semiconductor back film to a dicing tape to form an integrated type (for example, refer to Patent Document 1). As a method for manufacturing a semiconductor device using a dicing tape-integrated semiconductor back surface film, a method is known in which a wafer is bonded to a flip-chip semiconductor back surface film and then the wafer is cut by a blade. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2014-175548

[發明所欲解決之問題] 然而，存在由於刀片切割時之衝擊或摩擦而於晶片側面產生龜裂之情形。晶片側面之龜裂有使可靠性降低之虞。 [解決問題之技術手段] 本案發明者等為了解決上述問題而對切割帶一體型半導體背面用膜進行了研究。其結果發現，藉由採用下述構成，能夠減少刀片切割時於晶片側面產生之龜裂，從而完成了本發明。 即，第1本發明之切割帶一體型半導體背面用膜之特徵在於，具備： 具有基材及形成於上述基材上之黏著劑層之切割帶、及 形成於上述切割帶之上述黏著劑層上之覆晶型半導體背面用膜，且 上述黏著劑層之紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa。 根據上述構成，黏著劑層之紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa，紫外線照射後具有某種程度之硬度。因此，若於對黏著劑層照射紫外線後進行刀片切割，則能夠抑制刀片切割時之摩擦或衝擊，而能夠減少於晶片側面產生之龜裂。 於上述構成中，較佳為至少上述黏著劑層之晶圓貼附部之紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa。 當至少上述黏著劑層之晶圓貼附部之紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa時，若於對黏著劑層照射紫外線後進行刀片切割，則能夠進一步減少於晶片側面產生之龜裂。 於上述構成中，較佳為對上述黏著劑層照射紫外線後之上述覆晶型半導體背面用膜與上述黏著劑層之間之23℃下之剝離力為0.01 N/20 mm以上且0.2 N/20 mm以下。 對上述黏著劑層照射紫外線後之上述覆晶型半導體背面用膜與上述黏著劑層之間之23℃下之剝離力為0.01 N/20 mm以上且0.2 N/20 mm以下時，若於對黏著劑層照射紫外線後進行刀片切割，則能夠進一步減少於晶片側面產生之龜裂。又，能夠較佳地拾取切割後之晶片。 又，第2本發明之切割帶一體型半導體背面用膜之特徵在於，具備： 具有基材及形成於上述基材上之黏著劑層之切割帶、及 形成於上述切割帶之上述黏著劑層上之覆晶型半導體背面用膜，且 上述黏著劑層之23℃下之拉伸彈性模數為1 MPa～200 MPa。 根據上述構成，黏著劑層之23℃下之拉伸彈性模數為1 MPa～200 MPa，具有某種程度之硬度。因此，能夠抑制刀片切割時之摩擦或衝擊，而能夠減少於晶片側面產生之龜裂。 於上述構成中，較佳為至少上述黏著劑層之晶圓貼附部之23℃下之拉伸彈性模數為1 MPa～200 MPa。 若至少上述黏著劑層之晶圓貼附部之23℃下之拉伸彈性模數為1 MPa～200 MPa，則能夠進一步減少刀片切割時於晶片側面產生之龜裂。 於上述構成中，較佳為上述覆晶型半導體背面用膜與上述黏著劑層之間之23℃下之剝離力為0.01 N/20 mm以上且0.2 N/20 mm以下。 若上述覆晶型半導體背面用膜與上述黏著劑層之間之23℃下之剝離力為0.01 N/20 mm以上且0.2 N/20 mm以下，則能夠進一步減少刀片切割時於晶片側面產生之龜裂。又，能夠較佳地拾取切割後之晶片。 又，第3本發明之半導體裝置之製造方法之特徵在於，其係使用上述切割帶一體型半導體背面用膜之半導體裝置之製造方法，且具備以下步驟： 步驟A，於上述切割帶一體型半導體背面用膜之上述覆晶型半導體背面用膜上貼合半導體晶圓； 步驟B，以使上述黏著劑層之23℃下之拉伸彈性模數成為1 MPa～200 MPa之方式對上述黏著劑層照射紫外線； 步驟C，於上述步驟A及上述步驟B之後，對上述半導體晶圓進行刀片切割而形成半導體元件；及 步驟D，將上述半導體元件與上述覆晶型半導體背面用膜一起從上述黏著劑層剝離。 根據上述構成，步驟B之後紫外線照射後之黏著劑層之23℃下之拉伸彈性模數為1 MPa～200 MPa，因此具有某種程度之硬度。並且，於黏著劑層具有某種程度之硬度之狀態(23℃下之拉伸彈性模數為1 MPa～200 MPa)下進行刀片切割，因此能夠抑制刀片切割時之摩擦或衝擊，而能夠減少於晶片側面產生之龜裂。 再者，關於上述步驟A及上述步驟B，可先進行其中任一步驟。[Problems to be Solved by the Invention] However, there are cases where cracks occur on the side surface of the wafer due to impact or friction during dicing of the blade. Cracks on the side of the wafer may reduce reliability. [Technical Means for Solving the Problem] In order to solve the above-mentioned problems, the inventors of the present case have studied a dicing tape-integrated semiconductor back film. As a result, it was found that by employing the following configuration, it is possible to reduce the occurrence of cracks on the side surface of the wafer during dicing of the blade, and completed the present invention. That is, the dicing tape-integrated semiconductor back film according to the first aspect of the present invention includes: a dicing tape having a base material and an adhesive layer formed on the base material; and the adhesive layer formed on the dicing tape. The film for the backside of the above-mentioned flip-chip semiconductor, and the tensile modulus of elasticity at 23 ° C. after the ultraviolet ray irradiation of the adhesive layer is 1 MPa to 200 MPa. According to the above configuration, the tensile elastic modulus at 23 ° C. of the adhesive layer after UV irradiation is 1 MPa to 200 MPa, and it has a certain degree of hardness after UV irradiation. Therefore, if the blade is diced after the adhesive layer is irradiated with ultraviolet rays, friction or impact during the dicing of the blade can be suppressed, and cracks generated on the side of the wafer can be reduced. In the above configuration, it is preferable that at least the tensile elastic modulus at 23 ° C. after the ultraviolet irradiation of the wafer attachment portion of the adhesive layer is 1 MPa to 200 MPa. When at least the tensile modulus of elasticity at 23 ° C after ultraviolet irradiation of the wafer attachment portion of the above-mentioned adhesive layer is 1 MPa to 200 MPa, if the adhesive layer is irradiated with ultraviolet rays and then the blade is cut, it can be further cut. Reduce cracks on the side of the wafer. In the above configuration, it is preferable that the peel force at 23 ° C between the film for the flip-chip semiconductor back surface and the adhesive layer after the ultraviolet ray is irradiated to the adhesive layer is 0.01 N / 20 mm or more and 0.2 N / 20 mm or less. After the adhesive layer is irradiated with ultraviolet rays, the peel force at 23 ° C between the film for the flip-chip semiconductor back surface and the adhesive layer is 0.01 N / 20 mm or more and 0.2 N / 20 mm or less. Blade cutting after the adhesive layer is irradiated with ultraviolet rays can further reduce cracks generated on the side of the wafer. In addition, the diced wafer can be picked up better. Moreover, the dicing tape-integrated semiconductor back film of the second aspect of the present invention includes a dicing tape having a base material and an adhesive layer formed on the base material, and the adhesive layer formed on the dicing tape. The film for the back surface of the above-mentioned flip-chip semiconductor, and the tensile elastic modulus at 23 ° C. of the adhesive layer is 1 MPa to 200 MPa. According to the above configuration, the tensile elastic modulus at 23 ° C. of the adhesive layer is 1 MPa to 200 MPa, and has a certain degree of hardness. Therefore, it is possible to suppress friction or impact during dicing of the blade, and to reduce cracks generated on the side surface of the wafer. In the above configuration, it is preferable that at least the tensile elastic modulus at 23 ° C. of the wafer attachment portion of the adhesive layer is 1 MPa to 200 MPa. If at least the tensile modulus of elasticity at 23 ° C of the wafer attachment portion of the adhesive layer is 1 MPa to 200 MPa, it is possible to further reduce cracks generated on the side of the wafer when the blade is cut. In the above configuration, it is preferable that a peel force at 23 ° C. between the film for a flip-chip semiconductor back surface and the adhesive layer is 0.01 N / 20 mm or more and 0.2 N / 20 mm or less. If the peel force at 23 ° C between the film for the flip-chip semiconductor back surface and the adhesive layer is greater than or equal to 0.01 N / 20 mm and less than or equal to 0.2 N / 20 mm, it is possible to further reduce Cracked. In addition, the diced wafer can be picked up better. In addition, the method for manufacturing a semiconductor device according to a third aspect of the present invention is characterized in that it is a method for manufacturing a semiconductor device using the dicing tape-integrated semiconductor backside film, and includes the following steps: Step A: The dicing tape-integrated semiconductor is formed on the dicing tape-integrated semiconductor. Attach a semiconductor wafer to the above-mentioned flip-chip type semiconductor back-side film; step B, apply the adhesive to the adhesive so that the tensile elastic modulus at 23 ° C of the adhesive layer becomes 1 MPa to 200 MPa. The layer is irradiated with ultraviolet rays; step C, after the step A and the step B, the semiconductor wafer is diced to form a semiconductor element; and step D, the semiconductor element and the film for the flip-chip semiconductor back surface are removed from the semiconductor wafer together. The adhesive layer was peeled. According to the above configuration, the tensile elastic modulus at 23 ° C. of the adhesive layer after ultraviolet irradiation after step B is 1 MPa to 200 MPa, and therefore has a certain degree of hardness. In addition, blade cutting is performed in a state where the adhesive layer has a certain degree of hardness (tensile elastic modulus at 23 ° C is 1 MPa to 200 MPa), so it is possible to reduce friction or impact during cutting of the blade and reduce Cracks on the side of the wafer. In addition, as for the step A and the step B, any one of the steps may be performed first.

(切割帶一體型半導體背面用膜) 以下一面參照圖式一面對本發明之一實施形態之切割帶一體型半導體背面用膜進行說明。圖1係表示本發明之一實施形態之切割帶一體型半導體背面用膜之一例之剖面模式圖。如圖1所示，切割帶一體型半導體背面用膜1為具備於基材21上設置有黏著劑層22之切割帶2及覆晶型半導體背面用膜40(以下亦稱為「半導體背面用膜40」)之構成。又，本發明之切割帶一體型半導體背面用膜可如圖1所示為於切割帶2之黏著劑層22上僅於對應於半導體晶圓之貼合部分之部分23(以下亦稱為「晶圓貼附部23」)形成有覆晶型半導體背面用膜40之構成，亦可為於黏著劑層之整面形成有半導體背面用膜之構成，又，還可為在大於對應於半導體晶圓之貼合部分之部分且小於黏著劑層之整面之部分形成有半導體背面用膜之構成。再者，半導體背面用膜之表面(供貼合於晶圓之背面之一側之表面)於貼合於晶圓背面之前之期間可藉由隔離件等進行保護。 (覆晶型半導體背面用膜) 覆晶型半導體背面用膜40(半導體背面用膜40)較佳為含有熱硬化性樹脂及熱塑性樹脂而形成。 作為上述熱塑性樹脂，例如可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET(聚對苯二甲酸乙二酯)或PBT(聚對苯二甲酸丁二酯)等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或氟樹脂等。熱塑性樹脂可單獨使用或併用2種以上。該等熱塑性樹脂之中，尤佳為離子性雜質較少、耐熱性較高，而能夠確保半導體元件之可靠性之丙烯酸系樹脂。 作為上述丙烯酸系樹脂，並無特別限定，可列舉以具有碳數30以下(較佳為碳數4～18，進而較佳為碳數6～10，尤佳為碳數8或9)之直鏈或支鏈之烷基之丙烯酸或甲基丙烯酸之酯之1種或2種以上作為成分之聚合物等。即，本發明中，所謂丙烯酸系樹脂係指亦包括甲基丙烯酸系樹脂在內之廣義含義。作為上述烷基，例如可列舉：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂基、十八烷基等。 又，作為用以形成上述丙烯酸系樹脂之其他單體(烷基之碳數為30以下之丙烯酸或甲基丙烯酸之烷基酯以外之單體)，並無特別限定，例如可列舉：如丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、伊康酸、馬來酸、富馬酸或巴豆酸等之含羧基單體；如馬來酸酐或伊康酸酐等之酸酐單體；如(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯或丙烯酸(4-羥甲基環己基)甲酯等之含羥基單體；如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等之含磺酸基單體；如2-羥基乙基丙烯醯基磷酸酯等之含磷酸基單體；丙烯腈、丙烯醯基啉等。再者，所謂(甲基)丙烯酸係指丙烯酸及/或甲基丙烯酸，本發明之所謂(甲基)均為相同含義。 作為上述熱硬化性樹脂，除了環氧樹脂、酚系樹脂以外，可列舉：胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂、熱硬化性聚醯亞胺樹脂等。熱硬化性樹脂可單獨使用或併用2種以上。作為熱硬化性樹脂，尤佳為會腐蝕半導體元件之離子性雜質等之含量較少之環氧樹脂。又，作為環氧樹脂之硬化劑，可較佳地使用酚系樹脂。 作為環氧樹脂，並無特別限定，例如可使用：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、溴化雙酚A型環氧樹脂、氫化雙酚A型環氧樹脂、雙酚AF型環氧樹脂、聯苯型環氧樹脂、萘型環氧樹脂、茀型環氧樹脂、苯酚酚醛清漆型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂、三羥基苯基甲烷型環氧樹脂、四酚基乙烷型環氧樹脂等二官能環氧樹脂或多官能環氧樹脂；或乙內醯脲型環氧樹脂、異氰脲酸三縮水甘油酯型環氧樹脂或縮水甘油胺型環氧樹脂等環氧樹脂。 作為環氧樹脂，於上述例示中，尤佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型環氧樹脂、四酚基乙烷型環氧樹脂。其原因在於，該等環氧樹脂富有與作為硬化劑之酚系樹脂之反應性，耐熱性等優異。 進而，上述酚系樹脂係作為上述環氧樹脂之硬化劑發揮作用者，例如可列舉：苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚系樹脂；可溶酚醛型酚系樹脂；聚對羥基苯乙烯等聚羥基苯乙烯等。酚系樹脂可單獨使用或併用2種以上。該等酚系樹脂之中，尤佳為苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。其原因在於，能夠提高半導體裝置之連接可靠性。 關於環氧樹脂與酚系樹脂之調配比率，例如較佳為以酚系樹脂中之羥基相對於上述環氧樹脂成分中之環氧基每1當量成為0.5當量～2.0當量之方式調配。更佳為0.8當量～1.2當量。即，其原因在於，若兩者之調配比率偏離上述範圍，則無法進行充分之硬化反應，環氧樹脂硬化物之特性變得容易劣化。 本發明中，亦可使用環氧樹脂與酚系樹脂之熱硬化促進觸媒。作為熱硬化促進觸媒，並無特別限制，可從公知之熱硬化促進觸媒中適當選擇而使用。熱硬化促進觸媒可單獨使用或組合2種以上使用。作為熱硬化促進觸媒，例如可使用：胺系硬化促進劑、磷系硬化促進劑、咪唑系硬化促進劑、硼系硬化促進劑、磷-硼系硬化促進劑等。 作為半導體背面用膜40，較佳為由含有環氧樹脂及酚系樹脂之樹脂組合物、或含有環氧樹脂、酚系樹脂及丙烯酸系樹脂之樹脂組合物形成。該等樹脂由於離子性雜質較少、耐熱性較高，因此能夠確保半導體元件之可靠性。 半導體背面用膜40重要的是對半導體晶圓之背面(電路非形成面)具有接著性(密接性)。半導體背面用膜40例如可藉由含有作為熱硬化性樹脂之環氧樹脂之樹脂組合物形成。為了預先使半導體背面用膜40進行某種程度之交聯，亦可於製作時預先添加與聚合物之分子鏈末端之官能基等反應之多官能性化合物作為交聯劑。藉此，能夠提高高溫下之接著特性，實現耐熱性之改善。 作為上述交聯劑，並無特別限制，可使用公知之交聯劑。具體而言，例如可列舉：異氰酸酯系交聯劑、環氧系交聯劑、三聚氰胺系交聯劑、過氧化物系交聯劑，此外可列舉：脲系交聯劑、金屬烷氧化物系交聯劑、金屬螯合物系交聯劑、金屬鹽系交聯劑、碳二醯亞胺系交聯劑、㗁唑啉系交聯劑、氮丙啶系交聯劑、胺系交聯劑等。作為交聯劑，較佳為異氰酸酯系交聯劑或環氧系交聯劑。又，上述交聯劑可單獨使用或組合2種以上使用。 作為上述異氰酸酯系交聯劑，例如可列舉：1,2-伸乙基二異氰酸酯、1,4-伸丁基二異氰酸酯、1,6-六亞甲基二異氰酸酯等低級脂肪族聚異氰酸酯類；伸環戊基二異氰酸酯、伸環己基二異氰酸酯、異佛爾酮二異氰酸酯、氫化甲苯二異氰酸酯、氫化二甲苯二異氰酸酯等脂環族聚異氰酸酯類；2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯、苯二甲基二異氰酸酯等芳香族聚異氰酸酯類等，此外亦可使用：三羥甲基丙烷/甲苯二異氰酸酯三聚體加成物[Nippon Polyurethane Industry股份有限公司製造，商品名「CORONATE L」]、三羥甲基丙烷/六亞甲基二異氰酸酯三聚體加成物[Nippon Polyurethane Industry股份有限公司製造，商品名「CORONATE HL」]等。又，作為上述環氧系交聯劑，例如可列舉：N,N,N',N'-四縮水甘油基-間苯二甲胺、二縮水甘油基苯胺、1,3-雙(N,N-縮水甘油基胺基甲基)環己烷、1,6-己二醇二縮水甘油醚、新戊二醇二縮水甘油醚、乙二醇二縮水甘油醚、丙二醇二縮水甘油醚、聚乙二醇二縮水甘油醚、聚丙二醇二縮水甘油醚、山梨醇聚縮水甘油醚、甘油聚縮水甘油醚、季戊四醇聚縮水甘油醚、聚甘油聚縮水甘油醚、山梨醇酐聚縮水甘油醚、三羥甲基丙烷聚縮水甘油醚、己二酸二縮水甘油酯、鄰苯二甲酸二縮水甘油酯、三縮水甘油基-三(2-羥基乙基)異氰脲酸酯、間苯二酚二縮水甘油醚、雙酚-S-二縮水甘油醚，此外可列舉分子內具有2個以上環氧基之環氧系樹脂等。 再者，交聯劑之使用量並無特別限制，可根據進行交聯之程度而適當選擇。具體而言，作為交聯劑之使用量，例如相對於聚合物成分(尤其是具有分子鏈末端之官能基之聚合物)100重量份，通常較佳為設為7重量份以下(例如0.05重量份～7重量份)。若交聯劑之使用量相對於聚合物成分100重量份而多於7重量份，則接著力降低，故欠佳。再者，從凝聚力提高之觀點而言，交聯劑之使用量較佳為相對於聚合物成分100重量份為0.05重量份以上。 再者，本發明中，亦可代替使用交聯劑或者於使用交聯劑之同時藉由電子束或紫外線等之照射實施交聯處理。 半導體背面用膜40較佳為含有著色劑。藉此，半導體背面用膜40被著色，能夠發揮優異之標記性及外觀性，而能夠製成外觀具有附加價值之半導體裝置。如此，由於經著色之半導體背面用膜具有優異之標記性，因此藉由利用印刷方法或鐳射標記方法等各種標記方法，介隔半導體背面用膜對半導體元件或使用該半導體元件之半導體裝置之非電路面側之面實施標記，能夠賦予文字資訊或圖形資訊等各種資訊。尤其，藉由控制著色之顏色，可以優異之視認性視認藉由標記所賦予之資訊(文字資訊、圖形資訊等)。又，由於半導體背面用膜被著色，因此能夠容易地將切割帶與半導體背面用膜相區別，能夠提高作業性等。進而，例如作為半導體裝置，亦可根據不同製品而用顏色進行區別。於使半導體背面用膜變為有色之情形時(並非無色、透明之情形時)，作為藉由著色所呈現之顏色，並無特別限制，例如較佳為黑色、藍色、紅色等深色，尤佳為黑色。 於本實施形態中，所謂深色基本上係指L* a* b* 表色系統中規定之L* 成為60以下(0～60)[較佳為50以下(0～50)，進而較佳為40以下(0～40)]之較深之顏色。 又，所謂黑色基本上係指L* a* b* 表色系統中規定之L* 成為35以下(0～35)[較佳為30以下(0～30)，進而較佳為25以下(0～25)]之黑色系顏色。再者，於黑色中，L* a* b* 表色系統中規定之a* 及b* 可分別根據L* 之值而適當選擇。作為a* 及b* ，例如較佳為兩者均為-10～10，更佳為-5～5，尤佳為 -3～3之範圍(尤其是0或大致為0)。 再者，於本實施形態中，L* a* b* 表色系統中規定之L* 、a* 、b* 係藉由使用色彩色差計(商品名「CR-200」，Minolta公司製造；色彩色差計)進行測定而求出。再者，L* a* b* 表色系統係國際照明委員會(CIE)於1976年推薦之色空間，係指被稱為CIE1976(L* a* b* )表色系統之色空間。又，L* a* b* 表色系統於日本工業標準JIS Z 8729中進行了規定。 於對半導體背面用膜40進行著色時，可根據目標顏色使用著色材料(著色劑)。作為此種著色材料，可較佳地使用黑色系著色材料、藍色系著色材料、紅色系著色材料等各種深色系著色材料，更佳為黑色系著色材料。作為著色材料，可為顏料、染料等任一種。著色材料可單獨使用或組合2種以上使用。再者，作為染料，可使用酸性染料、反應染料、直接染料、分散染料、陽離子染料等任一形態之染料。又，顏料之形態亦無特別限制，可從公知之顏料中適當選擇而使用。 作為黑色系著色材料，並無特別限制，例如可從無機之黑色系顏料、黑色系染料中適當選擇。又，作為黑色系著色材料，亦可為混合有青色(cyan)系著色材料(藍綠色系著色材料)、品紅(magenda)系著色材料(紫紅色系著色材料)及黃色(yellow)系著色材料(黃色系著色材料)之著色材料混合物。黑色系著色材料可單獨使用或組合2種以上使用。當然，黑色系著色材料亦可與黑色以外之顏色之著色材料併用。 具體而言，作為黑色系著色材料，例如可列舉：碳黑(爐黑、煙囪黑、乙炔黑、熱碳黑、燈黑等)、石墨(graphite)、氧化銅、二氧化錳、偶氮系顏料(甲亞胺偶氮黑(azomethine azo black)等)、苯胺黑、苝黑、鈦黑、花青黑、活性碳、鐵氧體(非磁性鐵氧體、磁性鐵氧體等)、磁鐵礦、氧化鉻、氧化鐵、二硫化鉬、鉻錯合物、複合氧化物系黑色色素、蒽醌系有機黑色色素等。 本發明中，作為黑色系著色材料，亦可利用：C.I.溶劑黑3、C.I.溶劑黑7、C.I.溶劑黑22、C.I.溶劑黑27、C.I.溶劑黑29、C.I.溶劑黑34、C.I.溶劑黑43、C.I.溶劑黑70，C.I.直接黑17、C.I.直接黑19、C.I.直接黑22、C.I.直接黑32、C.I.直接黑38、C.I.直接黑51、C.I.直接黑71，C.I.酸性黑1、C.I.酸性黑2、C.I.酸性黑24、C.I.酸性黑26、C.I.酸性黑31、C.I.酸性黑48、C.I.酸性黑52、C.I.酸性黑107、C.I.酸性黑109、C.I.酸性黑110、C.I.酸性黑119、C.I.酸性黑154，C.I.分散黑1、C.I.分散黑3、C.I.分散黑10、C.I.分散黑24等黑色系染料；C.I.顏料黑1、C.I.顏料黑7等黑色系顏料等。 作為黑色系著色材料以外之著色材料，例如可列舉：青色系著色材料、品紅系著色材料、黃色系著色材料等。作為青色系著色材料，例如可列舉：C.I.溶劑藍25、C.I.溶劑藍36、C.I.溶劑藍60、C.I.溶劑藍70、C.I.溶劑藍93、C.I.溶劑藍95，C.I.酸性藍6、C.I.酸性藍45等青色系染料；C.I.顏料藍1、C.I.顏料藍2、C.I.顏料藍3、C.I.顏料藍15、C.I.顏料藍15:1、C.I.顏料藍15:2、C.I.顏料藍15:3、C.I.顏料藍15:4、C.I.顏料藍15:5、C.I.顏料藍15:6、C.I.顏料藍16、C.I.顏料藍17、C.I.顏料藍17:1、C.I.顏料藍18、C.I.顏料藍22、C.I.顏料藍25、C.I.顏料藍56、C.I.顏料藍60、C.I.顏料藍63、C.I.顏料藍65、C.I.顏料藍66，C.I.還原藍4、C.I.還原藍60，C.I.顏料綠7等青色系顏料等。 又，於品紅系著色材料中，作為品紅系染料，例如可列舉：C.I.溶劑紅1、C.I.溶劑紅3、C.I.溶劑紅8、C.I.溶劑紅23、C.I.溶劑紅24、C.I.溶劑紅25、C.I.溶劑紅27、C.I.溶劑紅30、C.I.溶劑紅49、C.I.溶劑紅52、C.I.溶劑紅58、C.I.溶劑紅63、C.I.溶劑紅81、C.I.溶劑紅82、C.I.溶劑紅83、C.I.溶劑紅84、C.I.溶劑紅100、C.I.溶劑紅109、C.I.溶劑紅111、C.I.溶劑紅121、C.I.溶劑紅122；C.I.分散紅9；C.I.溶劑紫8、C.I.溶劑紫13、C.I.溶劑紫14、C.I.溶劑紫21、C.I.溶劑紫27；C.I.分散紫1；C.I.鹼性紅1、C.I.鹼性紅2、C.I.鹼性紅9、C.I.鹼性紅12、C.I.鹼性紅13、C.I.鹼性紅14、C.I.鹼性紅15、C.I.鹼性紅17、C.I.鹼性紅18、C.I.鹼性紅22、C.I.鹼性紅23、C.I.鹼性紅24、C.I.鹼性紅27、C.I.鹼性紅29、C.I.鹼性紅32、C.I.鹼性紅34、C.I.鹼性紅35、C.I.鹼性紅36、C.I.鹼性紅37、C.I.鹼性紅38、C.I.鹼性紅39、C.I.鹼性紅40；C.I.鹼性紫1、C.I.鹼性紫3、C.I.鹼性紫7、C.I.鹼性紫10、C.I.鹼性紫14、C.I.鹼性紫15、C.I.鹼性紫21、C.I.鹼性紫25、C.I.鹼性紫26、C.I.鹼性紫27、C.I.鹼性紫28等。 於品紅系著色材料中，作為品紅系顏料，例如可列舉：C.I.顏料紅1、C.I.顏料紅2、C.I.顏料紅3、C.I.顏料紅4、C.I.顏料紅5、C.I.顏料紅6、C.I.顏料紅7、C.I.顏料紅8、C.I.顏料紅9、C.I.顏料紅10、C.I.顏料紅11、C.I.顏料紅12、C.I.顏料紅13、C.I.顏料紅14、C.I.顏料紅15、C.I.顏料紅16、C.I.顏料紅17、C.I.顏料紅18、C.I.顏料紅19、C.I.顏料紅21、C.I.顏料紅22、C.I.顏料紅23、C.I.顏料紅30、C.I.顏料紅31、C.I.顏料紅32、C.I.顏料紅37、C.I.顏料紅38、C.I.顏料紅39、C.I.顏料紅40、C.I.顏料紅41、C.I.顏料紅42、C.I.顏料紅48:1、C.I.顏料紅48:2、C.I.顏料紅48:3、C.I.顏料紅48:4、C.I.顏料紅49、C.I.顏料紅49:1、C.I.顏料紅50、C.I.顏料紅51、C.I.顏料紅52、C.I.顏料紅52:2、C.I.顏料紅53:1、C.I.顏料紅54、C.I.顏料紅55、C.I.顏料紅56、C.I.顏料紅57:1、C.I.顏料紅58、C.I.顏料紅60、C.I.顏料紅60:1、C.I.顏料紅63、C.I.顏料紅63:1、C.I.顏料紅63:2、C.I.顏料紅64、C.I.顏料紅641、C.I.顏料紅67、C.I.顏料紅68、C.I.顏料紅81、C.I.顏料紅83、C.I.顏料紅87、C.I.顏料紅88、C.I.顏料紅89、C.I.顏料紅90、C.I.顏料紅92、C.I.顏料紅101、C.I.顏料紅104、C.I.顏料紅105、C.I.顏料紅106、C.I.顏料紅108、C.I.顏料紅112、C.I.顏料紅114、C.I.顏料紅122、C.I.顏料紅123、C.I.顏料紅139、C.I.顏料紅144、C.I.顏料紅146、C.I.顏料紅147、C.I.顏料紅149、C.I.顏料紅150、C.I.顏料紅151、C.I.顏料紅163、C.I.顏料紅166、C.I.顏料紅168、C.I.顏料紅170、C.I.顏料紅171、C.I.顏料紅172、C.I.顏料紅175、C.I.顏料紅176、C.I.顏料紅177、C.I.顏料紅178、C.I.顏料紅179、C.I.顏料紅184、C.I.顏料紅185、C.I.顏料紅187、C.I.顏料紅190、C.I.顏料紅193、C.I.顏料紅202、C.I.顏料紅206、C.I.顏料紅207、C.I.顏料紅209、C.I.顏料紅219、C.I.顏料紅222、C.I.顏料紅224、C.I.顏料紅238、C.I.顏料紅245；C.I.顏料紫3、C.I.顏料紫9、C.I.顏料紫19、C.I.顏料紫23、C.I.顏料紫31、C.I.顏料紫32、C.I.顏料紫33、C.I.顏料紫36、C.I.顏料紫38、C.I.顏料紫43、C.I.顏料紫50；C.I.還原紅1、C.I.還原紅2、C.I.還原紅10、C.I.還原紅13、C.I.還原紅15、C.I.還原紅23、C.I.還原紅29、C.I.還原紅35等。 又，作為黃色系著色材料，例如可列舉：C.I.溶劑黃19、C.I.溶劑黃44、C.I.溶劑黃77、C.I.溶劑黃79、C.I.溶劑黃81、C.I.溶劑黃82、C.I.溶劑黃93、C.I.溶劑黃98、C.I.溶劑黃103、C.I.溶劑黃104、C.I.溶劑黃112、C.I.溶劑黃162等黃色系染料；C.I.顏料橙31、C.I.顏料橙43，C.I.顏料黃1、C.I.顏料黃2、C.I.顏料黃3、C.I.顏料黃4、C.I.顏料黃5、C.I.顏料黃6、C.I.顏料黃7、C.I.顏料黃10、C.I.顏料黃11、C.I.顏料黃12、C.I.顏料黃13、C.I.顏料黃14、C.I.顏料黃15、C.I.顏料黃16、C.I.顏料黃17、C.I.顏料黃23、C.I.顏料黃24、C.I.顏料黃34、C.I.顏料黃35、C.I.顏料黃37、C.I.顏料黃42、C.I.顏料黃53、C.I.顏料黃55、C.I.顏料黃65、C.I.顏料黃73、C.I.顏料黃74、C.I.顏料黃75、C.I.顏料黃81、C.I.顏料黃83、C.I.顏料黃93、C.I.顏料黃94、C.I.顏料黃95、C.I.顏料黃97、C.I.顏料黃98、C.I.顏料黃100、C.I.顏料黃101、C.I.顏料黃104、C.I.顏料黃108、C.I.顏料黃109、C.I.顏料黃110、C.I.顏料黃113、C.I.顏料黃114、C.I.顏料黃116、C.I.顏料黃117、C.I.顏料黃120、C.I.顏料黃128、C.I.顏料黃129、C.I.顏料黃133、C.I.顏料黃138、C.I.顏料黃139、C.I.顏料黃147、C.I.顏料黃150、C.I.顏料黃151、C.I.顏料黃153、C.I.顏料黃154、C.I.顏料黃155、C.I.顏料黃156、C.I.顏料黃167、C.I.顏料黃172、C.I.顏料黃173、C.I.顏料黃180、C.I.顏料黃185、C.I.顏料黃195，C.I.還原黃1、C.I.還原黃3、C.I.還原黃20等黃色系顏料等。 青色系著色材料、品紅系著色材料、黃色系著色材料等各種著色材料可分別單獨使用或組合2種以上使用。再者，於青色系著色材料、品紅系著色材料、黃色系著色材料等各種著色材料使用2種以上之情形時，作為該等著色材料之混合比率(或調配比率)，並無特別限制，可根據各著色材料之種類或目標顏色等而適當選擇。 半導體背面用膜40中可視需要適當調配其他添加劑。作為其他添加劑，例如可列舉：填充劑(填料)、阻燃劑、矽烷偶合劑、離子捕捉劑，此外可列舉：增量劑、防老化劑、抗氧化劑、界面活性劑等。 作為上述填充劑，可為無機填充劑、有機填充劑中之任一種，較佳為無機填充劑。藉由調配無機填充劑等填充劑，能夠實現半導體背面用膜40之賦予或導熱性之提高、彈性模數之調節等。再者，作為半導體背面用膜40，可為導電性，亦可為非導電性。作為上述無機填充劑，例如可列舉包含二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽等陶瓷類、鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀、焊錫等金屬或合金類、以及碳等之各種無機粉末等。填充劑可單獨使用或組合2種以上使用。作為填充劑，其中較佳為二氧化矽、尤其是熔融二氧化矽。再者，無機填充劑之平均粒徑較佳為0.1 μm～80 μm之範圍內。無機填充劑之平均粒徑例如可藉由鐳射繞射型粒度分佈測定裝置進行測定。 上述填充劑(尤其是無機填充劑)之調配量較佳為相對於有機樹脂成分100重量份為80重量份以下(0重量份～80重量份)，尤佳為0重量份～70重量份。 又，作為上述阻燃劑，例如可列舉：三氧化二銻、五氧化二銻、溴化環氧樹脂等。阻燃劑可單獨使用或併用2種以上。作為上述矽烷偶合劑，例如可列舉：β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等。矽烷偶合劑可單獨使用或併用2種以上。作為上述離子捕捉劑，例如可列舉：水滑石類、氫氧化鉍等。離子捕捉劑可單獨使用或併用2種以上。 半導體背面用膜40例如可利用如下慣用方法形成：將環氧樹脂等熱硬化性樹脂、視需要之丙烯酸系樹脂等熱塑性樹脂、以及視需要之溶劑或其他添加劑等加以混合而製備樹脂組合物，並形成為膜狀之層。 半導體背面用膜40較佳為硬化後之拉伸儲存彈性模數於23℃～80℃之全部範圍內為1 GPa以上。若拉伸儲存彈性模數為1 GPa以上，則能夠減少切割時於晶片側面產生之龜裂。拉伸儲存彈性模數較佳為2 GPa以上。硬化後之半導體背面用膜40之拉伸儲存彈性模數可藉由丙烯酸系樹脂之含量、熱硬化性樹脂之含量等進行調整。再者，半導體背面用膜40可藉由120℃ 2小時之加熱而硬化。硬化後之半導體背面用膜40之拉伸儲存彈性模數係利用實施例中記載之方法進行測定。 硬化後之半導體背面用膜40之23℃下之拉伸儲存彈性模數較佳為2 GPa以上、更佳為2.5 GPa以上。硬化後之半導體背面用膜40之23℃下之拉伸儲存彈性模數之上限為例如50 GPa、10 GPa、7 GPa、5 GPa。另一方面，硬化後之半導體背面用膜40之80℃下之拉伸儲存彈性模數之上限為例如50 GPa、10 GPa、7 GPa、5 GPa。 硬化後之半導體背面用膜40之80℃下之拉伸儲存彈性模數相對於硬化後之半導體背面用膜40之23℃下之拉伸儲存彈性模數之比(80℃下之拉伸儲存彈性模數/23℃下之拉伸儲存彈性模數)較佳為0.3以上、較佳為0.4以上。若拉伸儲存彈性模數之比未達0.3，則相對於溫度之彈性模數變化較大，因此容易產生晶片側面之龜裂。拉伸儲存彈性模數之比(80℃下之拉伸儲存彈性模數/23℃下之拉伸儲存彈性模數)較佳為1.0以下、更佳為0.9以下、進而較佳為0.8以下。 半導體背面用膜40較佳為具有1.7 kgf/mm2 以上之相對於矽晶片之25℃下之剪切接著力。若25℃下之剪切接著力為1.7 kgf/mm2 以上，則能夠減少切割時於晶片側面產生之龜裂。推測能夠抑制切割時之半導體晶片之振動。25℃下之剪切接著力之下限為例如1.8 kgf/mm2 。25℃下之剪切接著力之上限為例如4 kgf/mm2 、3.5 kgf/mm2 、3 kgf/mm2 等。25℃下之剪切接著力可藉由熱塑性樹脂相對於熱硬化性樹脂之比等進行調整。25℃下之剪切接著力可於70℃下將半導體背面用膜40固定於矽晶片，以120℃加熱2小時後，於剪切速度500 μm/sec、25℃之條件下進行測定。 半導體背面用膜40較佳為具有0.5 kgf/mm2 以上之相對於矽晶片之100℃下之剪切接著力。若100℃下之剪切接著力為0.5 kgf/mm2 以上，則有不易產生切割時之晶片飛濺、或回焊時之半導體背面用膜40之剝離之傾向，可靠性優異。100℃下之剪切接著力較佳為1.0 kgf/mm2 以上、更佳為2.0 kgf/mm2 以上。 半導體背面用膜40較佳為藉由隔離件(剝離襯墊)進行保護(未圖示)。隔離件具有於供於實際使用之前保護半導體背面用膜之作為保護材料之功能。隔離件於將半導體晶圓貼合於半導體背面用膜上時剝離。作為隔離件，可使用聚乙烯、聚丙烯、或利用氟系剝離劑、長鏈烷基丙烯酸酯系剝離劑等剝離劑進行了表面塗佈之塑膠膜(聚對苯二甲酸乙二酯等)或紙等。再者，隔離件可利用先前公知之方法形成。又，隔離件之厚度等亦無特別限制。 半導體背面用膜40之厚度並無特別限定，例如可從2 μm～200 μm左右之範圍適當選擇。進而，上述厚度較佳為4 μm～160 μm左右，更佳為6 μm～100 μm左右，尤佳為10 μm～80 μm左右。 (切割帶) 切割帶2係於基材21上形成黏著劑層22而構成。如此，切割帶2只要具有積層有基材21及黏著劑層22之構成即可。 切割帶2可分為： (1)黏著劑層22之紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa之情形； (2)黏著劑層22之23℃下之拉伸彈性模數為1 MPa～200 MPa之情形。 以下，首先對(1)之情形進行說明。 黏著劑層22於紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa、較佳為1 MPa～100 MPa、更佳為10 MPa～50 MPa。紫外線照射後之23℃下之拉伸彈性模數為1 MPa以上，紫外線照射後具有某種程度之硬度。因此，若於對黏著劑層22照射紫外線後進行刀片切割，則能夠減少於晶片側面產生之龜裂。又，由於紫外線照射後之23℃下之拉伸彈性模數為200 MPa以下，因此能夠抑制於切割時發生晶片飛散(die fly)。紫外線照射量係基於實施例中之記載。 較佳為至少黏著劑層22之晶圓貼附部23之紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa、更佳為1 MPa～100 MPa、進而較佳為10 MPa～50 MPa。即，於黏著劑層22僅由晶圓貼附部23構成之情形時，較佳為黏著劑層22於紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa。又，於黏著劑層22由晶圓貼附部23及其以外之部分構成之情形時，只要至少黏著劑層22之晶圓貼附部23之紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa即可，其以外之部分並無特別限定。若至少黏著劑層22之晶圓貼附部23之23℃下之拉伸彈性模數為1 MPa～200 MPa，則能夠進一步減少刀片切割時於晶片側面產生之龜裂。 紫外線照射後之黏著劑層22之拉伸彈性模數例如可藉由下述之交聯劑、光聚合起始劑、紫外線反應型交聯劑之含量等進行調整。 對黏著劑層22照射紫外線後之覆晶型半導體背面用膜40與黏著劑層22之間之23℃下之剝離力較佳為0.01 N/20 mm以上且0.2 N/20 mm以下、更佳為0.03 N/20 mm以上且0.15 N/20 mm以下、進而較佳為0.05 N/20 mm以上且0.10 N/20 mm以下。若對黏著劑層22照射紫外線後之覆晶型半導體背面用膜40與黏著劑層22之間之23℃下之剝離力為0.01 N/20 mm以上且0.2 N/20 mm以下，則能夠進一步減少刀片切割時於晶片側面產生之龜裂。又，能夠較佳地拾取切割後之晶片。 基材21可用作黏著劑層等之支持母體。基材21較佳為具有紫外線透過性。作為基材21，例如可使用：紙等紙系基材；布、不織布、毛氈、網狀物等纖維系基材；金屬箔、金屬板等金屬系基材；塑膠之膜或片材等塑膠系基材；橡膠片等橡膠系基材；發泡片等發泡體；或該等之積層體[尤其是塑膠系基材與其他基材之積層體、或塑膠膜(或片)彼此之積層體等]等適當之薄層體。本發明中，作為基材，可較佳地使用塑膠之膜或片材等塑膠系基材。作為此種塑膠材料之素材，例如可列舉：聚乙烯(PE)、聚丙烯(PP)、乙烯-丙烯共聚物等烯烴系樹脂；乙烯-乙酸乙烯酯共聚物(EVA)、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物等以乙烯作為單體成分之共聚物；聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)、聚對苯二甲酸丁二酯(PBT)等聚酯；丙烯酸系樹脂；聚氯乙烯(PVC)；聚胺基甲酸酯；聚碳酸酯；聚苯硫醚(PPS)；聚醯胺(尼龍)、全芳香族聚醯胺(芳綸(aramid))等醯胺系樹脂；聚醚醚酮(PEEK)；聚醯亞胺；聚醚醯亞胺；聚偏二氯乙烯；ABS(丙烯腈-丁二烯-苯乙烯共聚物)；纖維素系樹脂；聚矽氧樹脂；氟樹脂等。 又，作為基材21之材料，可列舉上述樹脂之交聯體等聚合物。上述塑膠膜可以無延伸之狀態使用，亦可視需要使用實施有單軸或雙軸之延伸處理者。根據藉由延伸處理等而賦予了熱收縮性之樹脂片，能夠藉由切割後使基材21熱收縮而降低黏著劑層22與半導體背面用膜40之接著面積，實現半導體晶片之回收之容易化。 基材21之表面可實施慣用之表面處理，例如鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化放射線處理等化學或物理處理、及利用底塗劑(例如下述黏著物質)之塗佈處理以提高與鄰接之層之密接性、保持性等。 基材21可適當選擇同一種類或不同種類者使用，視需要可使用數種之摻合物。又，對於基材21，可為了賦予抗靜電能力而於上述基材21上設置包含金屬、合金、該等之氧化物等之厚度為30～500 Å左右之導電性物質之蒸鍍層。基材21可為單層或2種以上之複層。 基材21之厚度(於為積層體之情形時係指總厚度)並無特別限制，可根據強度或柔軟性、使用目的等而適當選擇，例如一般為1000 μm以下(例如1 μm～ 1000 μm)，較佳為10 μm～500 μm，進而較佳為20 μm～300 μm，尤其是30 μm～200 μm左右，但不限於該等。 再者，基材21中，亦可於不損害本發明之效果等之範圍內含有各種添加劑(著色劑、填充劑、塑化劑、防老化劑、抗氧化劑、界面活性劑、阻燃劑等)。 黏著劑層22係由黏著劑所形成，具有黏著性。黏著劑層22只要於紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa則並無特別限定，可從公知之黏著劑中適當選擇。具體而言，作為黏著劑，例如可從下述中適當選擇具有上述特性之黏著劑而使用：丙烯酸系黏著劑、橡膠系黏著劑、乙烯基烷基醚系黏著劑、聚矽氧系黏著劑、聚酯系黏著劑、聚醯胺系黏著劑、胺基甲酸酯系黏著劑、氟系黏著劑、苯乙烯-二烯嵌段共聚物系黏著劑、於該等黏著劑中調配熔點約200℃以下之熱熔融性樹脂而成之蠕變特性改良型黏著劑等公知之黏著劑(例如參照日本專利特開昭56-61468號公報、日本專利特開昭61-174857號公報、日本專利特開昭63-17981號公報、日本專利特開昭56-13040號公報等)。其中，較佳為使用紫外線硬化型黏著劑。黏著劑可單獨使用或組合2種以上使用。 作為上述黏著劑，可較佳地使用丙烯酸系黏著劑、橡膠系黏著劑，尤佳為丙烯酸系黏著劑。作為丙烯酸系黏著劑，可列舉以使用1種或2種以上(甲基)丙烯酸烷基酯作為單體成分之丙烯酸系聚合物(均聚物或共聚物)作為基礎聚合物之丙烯酸系黏著劑。 作為上述丙烯酸系黏著劑中之(甲基)丙烯酸烷基酯，例如可列舉：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第二丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等(甲基)丙烯酸烷基酯等。作為(甲基)丙烯酸烷基酯，較佳為烷基之碳數為4～18之(甲基)丙烯酸烷基酯。再者，(甲基)丙烯酸烷基酯之烷基可為直鏈狀或支鏈狀中之任一種。 再者，上述丙烯酸系聚合物亦可以凝聚力、耐熱性、交聯性等之改質為目的而視需要含有可與上述(甲基)丙烯酸烷基酯共聚之其他單體成分(共聚性單體成分)所對應之單元。作為此種共聚性單體成分，例如可列舉：(甲基)丙烯酸(丙烯酸、甲基丙烯酸)、丙烯酸羧基乙酯、丙烯酸羧基戊酯、伊康酸、馬來酸、富馬酸、巴豆酸等含羧基單體；馬來酸酐、伊康酸酐等含酸酐基單體；(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基丙酯、(甲基)丙烯酸羥基丁酯、(甲基)丙烯酸羥基己酯、(甲基)丙烯酸羥基辛酯、(甲基)丙烯酸羥基癸酯、(甲基)丙烯酸羥基月桂酯、(甲基)丙烯酸(4-羥甲基環己基)甲酯等含羥基單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基單體；2-羥基乙基丙烯醯基磷酸酯等含磷酸基單體；(甲基)丙烯醯胺、N,N-二甲基(甲基)丙烯醯胺、N-丁基(甲基)丙烯醯胺、N-羥甲基(甲基)丙烯醯胺、N-羥甲基丙烷(甲基)丙烯醯胺等(N-取代)醯胺系單體；(甲基)丙烯酸胺基乙酯、(甲基)丙烯酸N,N-二甲胺基乙酯、(甲基)丙烯酸第三丁基胺基乙酯等(甲基)丙烯酸胺基烷基酯系單體；(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯等(甲基)丙烯酸烷氧基烷基酯系單體；丙烯腈、甲基丙烯腈等氰基丙烯酸酯單體；(甲基)丙烯酸縮水甘油酯等含環氧基丙烯酸系單體；苯乙烯、α-甲基苯乙烯等苯乙烯系單體；乙酸乙烯酯、丙酸乙烯酯等乙烯酯系單體；異戊二烯、丁二烯、異丁烯等烯烴系單體；乙烯醚等乙烯醚系單體；N-乙烯基吡咯啶酮、甲基乙烯基吡咯啶酮、乙烯基吡啶、乙烯基哌啶酮、乙烯基嘧啶、乙烯基哌、乙烯基吡、乙烯基吡咯、乙烯基咪唑、乙烯基㗁唑、乙烯基啉、N-乙烯基羧酸醯胺類、N-乙烯基己內醯胺等含氮單體；N-環己基馬來醯亞胺、N-異丙基馬來醯亞胺、N-月桂基馬來醯亞胺、N-苯基馬來醯亞胺等馬來醯亞胺系單體；N-甲基伊康醯亞胺、N-乙基伊康醯亞胺、N-丁基伊康醯亞胺、N-辛基伊康醯亞胺、N-2-乙基己基伊康醯亞胺、N-環己基伊康醯亞胺、N-月桂基伊康醯亞胺等伊康醯亞胺系單體；N-(甲基)丙烯醯氧基亞甲基琥珀醯亞胺、N-(甲基)丙烯醯基-6-氧基六亞甲基琥珀醯亞胺、N-(甲基)丙烯醯基-8-氧基八亞甲基琥珀醯亞胺等琥珀醯亞胺系單體；聚乙二醇(甲基)丙烯酸酯、聚丙二醇(甲基)丙烯酸酯、甲氧基乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯等二醇系丙烯酸酯單體；(甲基)丙烯酸四氫糠酯、氟(甲基)丙烯酸酯、聚矽氧(甲基)丙烯酸酯等具有雜環、鹵素原子、矽原子等之丙烯酸酯系單體；己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧丙烯酸酯、聚酯丙烯酸酯、丙烯酸胺基甲酸酯、二乙烯苯、丁基二(甲基)丙烯酸酯(butyl di(meta)acrylate)、己基二(甲基)丙烯酸酯(hexyl di(meta)acrylate)等多官能單體等。該等共聚性單體成分可使用1種或2種以上。 上述黏著劑中較佳為採用交聯劑(外部交聯劑)以調整彈性模數。作為上述交聯劑，無特別限制，可使用公知之交聯劑。具體而言，作為交聯劑，可列舉：異氰酸酯系交聯劑、環氧系交聯劑、三聚氰胺系交聯劑、過氧化物系交聯劑，此外可列舉：脲系交聯劑、金屬烷氧化物系交聯劑、金屬螯合物系交聯劑、金屬鹽系交聯劑、碳二醯亞胺系交聯劑、㗁唑啉系交聯劑、氮丙啶系交聯劑、胺系交聯劑等，較佳為異氰酸酯系交聯劑或環氧系交聯劑。交聯劑可單獨使用或組合2種以上使用。再者，交聯劑之使用量無特別限制。於使用交聯劑之情形時，較佳為相對於基礎聚合物(溶劑除外之固形物成分)100重量份而調配0.1～20重量份。 作為上述異氰酸酯系交聯劑，例如可列舉：1,2-伸乙基二異氰酸酯、1,4-伸丁基二異氰酸酯、1,6-六亞甲基二異氰酸酯等低級脂肪族聚異氰酸酯類；伸環戊基二異氰酸酯、伸環己基二異氰酸酯、異佛爾酮二異氰酸酯、氫化甲苯二異氰酸酯、氫化二甲苯二異氰酸酯等脂環族聚異氰酸酯類；2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯、苯二甲基二異氰酸酯等芳香族聚異氰酸酯類等，此外可使用：三羥甲基丙烷/甲苯二異氰酸酯三聚體加成物[Nippon Polyurethane Industry股份有限公司製造，商品名「CORONATE L」]、三羥甲基丙烷/六亞甲基二異氰酸酯三聚體加成物[Nippon Polyurethane Industry股份有限公司製造，商品名「CORONATE HL」]等。又，作為上述環氧系交聯劑，例如可列舉：N,N,N',N'-四縮水甘油基間苯二甲胺、二縮水甘油基苯胺、1,3-雙(N,N-縮水甘油基胺基甲基)環己烷、1,6-己二醇二縮水甘油醚、新戊二醇二縮水甘油醚、乙二醇二縮水甘油醚、丙二醇二縮水甘油醚、聚乙二醇二縮水甘油醚、聚丙二醇二縮水甘油醚、山梨醇聚縮水甘油醚、甘油聚縮水甘油醚、季戊四醇聚縮水甘油醚、聚甘油聚縮水甘油醚、山梨醇酐聚縮水甘油醚、三羥甲基丙烷聚縮水甘油醚、己二酸二縮水甘油酯、鄰苯二甲酸二縮水甘油酯、三縮水甘油基-三(2-羥基乙基)異氰脲酸酯、間苯二酚二縮水甘油醚、雙酚-S-二縮水甘油醚，此外可列舉分子內具有2個以上環氧基之環氧系樹脂等。 於使用紫外線硬化型黏著劑作為黏著劑之情形時，作為紫外線硬化型黏著劑(組合物)，例如可列舉：將於聚合物側鏈、或者主鏈中或主鏈末端具有自由基反應性碳-碳雙鍵之聚合物用作基礎聚合物之內在型之紫外線硬化型黏著劑。 上述具有碳-碳雙鍵之基礎聚合物可無特別限制地使用具有碳-碳雙鍵且具有黏著性者。作為此種基礎聚合物，較佳為將丙烯酸系聚合物作為基本骨架者。作為丙烯酸系聚合物之基本骨架，可列舉上述例示之丙烯酸系聚合物。 向上述丙烯酸系聚合物中導入碳-碳雙鍵之導入法無特別限制，可採用各種方法，向聚合物側鏈導入碳-碳雙鍵時，分子設計容易。例如可列舉如下方法：預先使丙烯酸系聚合物與具有官能基之單體共聚，其後與具有可與該官能基反應之官能基及碳-碳雙鍵之化合物於維持碳-碳雙鍵之放射線硬化性之狀態下進行縮合或加成反應。 上述黏著劑較佳為包含紫外線反應型交聯劑(紫外線聚合性之單體成分、或低聚物成分)。若包含紫外線反應型交聯劑，則能夠提高紫外線照射後之彈性模數。 作為紫外線反應型交聯劑，例如可列舉：(甲基)丙烯酸胺基甲酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。又，可列舉：胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物，適合的是其分子量為100～30000左右之範圍者。藉由含有紫外線反應型交聯劑，可藉由紫外線照射而使彈性模數大幅提高。紫外線反應型交聯劑之調配量較佳為相對於基礎聚合物100重量份為1～50重量份。 上述黏著劑較佳為包含光聚合起始劑。作為光聚合起始劑，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等α-酮醇系化合物；甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-啉基丙烷-1-酮等苯乙酮系化合物；安息香乙醚、安息香異丙醚、大茴香偶姻甲醚等安息香醚系化合物；苯偶醯二甲基縮酮等縮酮系化合物；2-萘磺醯氯等芳香族磺醯氯系化合物；1-苯酮-1,2-丙二酮-2-(O-乙氧基羰基)肟等光活性肟系化合物；二苯甲酮、苯甲醯苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物；9-氧硫 、2-氯-9-氧硫 、2-甲基-9-氧硫 、2,4-二甲基-9-氧硫 、異丙基-9-氧硫 、2,4-二氯-9-氧硫 、2,4-二乙基-9-氧硫 、2,4-二異丙基-9-氧硫 等9-氧硫 系化合物；樟腦醌；鹵化酮；醯基氧化膦；醯基膦酸酯等。光聚合起始劑之調配量相對於構成黏著劑之基礎聚合物100重量份，例如為0.05～10重量份左右。 黏著劑層22例如可利用下述慣用之方法形成：將黏著劑(感壓接著劑)與視需要之溶劑或其他添加劑等加以混合，形成片狀之層。具體而言，例如可藉由下述方法等形成黏著劑層22：將含有黏著劑及視需要之溶劑或其他添加劑之混合物塗佈於基材21上之方法；於適合之隔離件(剝離紙等)上塗佈上述混合物而形成黏著劑層22並將其轉印(轉移)至基材21上之方法。 黏著劑層22之厚度無特別限制，例如為5 μm～300 μm(較佳為5 μm～200 μm，進而較佳為5 μm～100 μm，尤佳為7 μm～50 μm)左右。若黏著劑層22之厚度為上述範圍內，則能夠發揮適度之黏著力。再者，黏著劑層22可為單層、複層中之任一種。 切割帶一體型半導體背面用膜1可以捲成輥狀之形態形成，亦可以積層有片材(膜)之形態形成。例如，於具有捲成輥狀之形態之情形時，可將覆晶型半導體背面用膜與切割帶之積層體於視需要利用隔離件進行保護之狀態下捲成輥狀，製成捲成輥狀之狀態或形態之切割帶一體型半導體背面用膜。再者，作為捲成輥狀之狀態或形態之切割帶一體型半導體背面用膜1，可由基材21、形成於基材21之一面之黏著劑層22、形成於黏著劑層22上之半導體背面用膜40、以及形成於基材21之另一面之剝離處理層(背面處理層)構成。 再者，作為切割帶一體型半導體背面用膜1之厚度(半導體背面用膜之厚度與包含基材21及黏著劑層22之切割帶之厚度之總厚度)，例如可從7 μm～11300 μm之範圍選擇，較佳為17 μm～1600 μm(進而較佳為28 μm～1200 μm)。 以上對上述(1)之情形，即，黏著劑層22之紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa之情形之切割帶2進行了說明。 繼而，對上述(2)之情形，即，黏著劑層22之23℃下之拉伸彈性模數為1 MPa～200 MPa之情形之切割帶2進行說明。 於(2)之情形時，黏著劑層22於23℃下之拉伸彈性模數為1 MPa～200 MPa、較佳為1 MPa～100 MPa、更佳為10 MPa～50 MPa。黏著劑層22於23℃下之拉伸彈性模數為1 MPa以上，具有某種程度之硬度。因此，能夠減少刀片切割時於晶片側面產生之龜裂。又，於23℃下之拉伸彈性模數為200 MPa以下，因此能夠抑制於切割時發生晶片飛散。 較佳為至少黏著劑層22之晶圓貼附部23之23℃下之拉伸彈性模數為1 MPa～200 MPa、更佳為1 MPa～100 MPa、進而較佳為10 MPa～50 MPa。即，於黏著劑層22僅由晶圓貼附部23構成之情形時，較佳為黏著劑層22於23℃下之拉伸彈性模數為1 MPa～200 MPa。又，於黏著劑層22由晶圓貼附部23及其以外之部分構成之情形時，只要至少黏著劑層22之晶圓貼附部23之23℃下之拉伸彈性模數為1 MPa～200 MPa即可，其以外之部分無特別限定。若至少黏著劑層22之晶圓貼附部23之23℃下之拉伸彈性模數為1 MPa～200 MPa，則能夠進一步減少刀片切割時於晶片側面產生之龜裂。 黏著劑層22之拉伸彈性模數例如可藉由交聯劑之含量等進行調整。 覆晶型半導體背面用膜40與黏著劑層22之間之23℃下之剝離力較佳為0.01 N/20 mm以上且0.2 N/20 mm以下、更佳為0.03 N/20 mm以上且0.15 N/20 mm以下、進而較佳為0.05 N/20 mm以上且0.10 N/20 mm以下。若覆晶型半導體背面用膜40與黏著劑層22之間之23℃下之剝離力為0.01 N/20 mm以上且0.2 N/20 mm以下，則能夠進一步減少刀片切割時於晶片側面產生之龜裂。 上述(2)之情形之黏著劑層22之組成只要黏著劑層22之23℃下之拉伸彈性模數為1 MPa～200 MPa，則可採用與上述(1)同樣之構成，因此在此省略詳細說明。例如，黏著劑層22亦可不使用紫外線硬化型黏著劑，而由不進行紫外線硬化之黏著劑構成。 以上對上述(2)之情形，即，黏著劑層22之23℃下之拉伸彈性模數為1 MPa～200 MPa之情形之切割帶2進行了說明。 (切割帶一體型半導體背面用膜之製造方法) 以圖1所示之切割帶一體型半導體背面用膜1為例對本實施形態之切割帶一體型半導體背面用膜之製造方法進行說明。首先，基材21可藉由先前公知之製膜方法製膜。作為該製膜方法，例如可例示：壓延製膜法、於有機溶劑中之流延法(casting method)、於密閉系統中之吹脹擠出法、T模擠出法、共擠出法、乾式層壓法等。 繼而，於基材21上塗佈黏著劑組合物，進行乾燥(視需要進行加熱交聯)而形成黏著劑層22。作為塗佈方式，可列舉：輥式塗覆、絲網塗覆、凹版塗覆等。再者，可將黏著劑層組合物直接塗佈於基材21而於基材21上形成黏著劑層22，亦可於將黏著劑組合物塗佈於表面經過剝離處理之剝離紙等而形成黏著劑層22之後將該黏著劑層22轉印至基材21。藉此，製作於基材21上形成有黏著劑層22之切割帶2。 另一方面，將用以形成半導體背面用膜40之形成材料以乾燥後之厚度成為特定厚度之方式塗佈於剝離紙上，進而於特定條件下乾燥(於需要熱硬化之情形等時，視需要實施加熱處理進行乾燥)，形成塗佈層。藉由將該塗佈層轉印至黏著劑層22上，於黏著劑層22上形成半導體背面用膜40。再者，亦可藉由於黏著劑層22上直接塗佈用以形成半導體背面用膜40之形成材料之後，於特定條件下進行乾燥(於需要熱硬化之情形等時，視需要實施加熱處理進行乾燥)，而於黏著劑層22上形成半導體背面用膜40。藉由以上方法，能夠獲得本發明之切割帶一體型半導體背面用膜1。再者，於形成半導體背面用膜40時進行熱硬化之情形時，重要的是以達到部分硬化之狀態之程度進行熱硬化，但較佳為不進行熱硬化。 切割帶一體型半導體背面用膜1可於具備覆晶接合步驟之半導體裝置之製造時較佳地使用。即，本發明之切割帶一體型半導體背面用膜1於製造覆晶安裝之半導體裝置時使用，於半導體晶片之背面貼合有切割帶一體型半導體背面用膜1之半導體背面用膜40之狀態或形態下製造覆晶安裝之半導體裝置。因此，本發明之切割帶一體型半導體背面用膜1可用於覆晶安裝之半導體裝置(半導體晶片以覆晶接合方式固定於基板等被接著體之狀態或形態之半導體裝置)。 (半導體晶圓) 作為半導體晶圓，若為公知或慣用之半導體晶圓則無特別限制，可從各種素材之半導體晶圓中適當選擇並使用。本發明中，作為半導體晶圓，可較佳地使用矽晶圓。 (半導體裝置之製造方法) [第1實施形態] 以下一面參照圖2～圖7一面對第1實施形態之半導體裝置之製造方法進行說明。圖2～圖7係用以說明第1實施形態之半導體裝置之製造方法之剖面模式圖。 第1實施形態之半導體裝置之製造方法係於第3本發明之半導體裝置之製造方法中，先進行步驟A，其後進行步驟B之情形。 第1實施形態之半導體裝置之製造方法至少具有如下步驟： 步驟A，於上述切割帶一體型半導體背面用膜之上述覆晶型半導體背面用膜上貼合半導體晶圓； 步驟B，於上述步驟A之後，以使上述黏著劑層之23℃下之拉伸彈性模數成為1 MPa～200 MPa之方式對上述黏著劑層照射紫外線； 步驟C，於上述步驟A及上述步驟B之後，對上述半導體晶圓進行刀片切割而形成半導體元件；及 步驟D，將上述半導體元件與上述覆晶型半導體背面用膜一起從上述黏著劑層剝離。 以下對第1實施形態進行詳細說明。第1實施形態中，使用上述(1)之情形之切割帶一體型半導體背面用膜1。即，第1實施形態之黏著劑層22於紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa。黏著劑層22之紫外線照射前之23℃下之拉伸彈性模數可在1 MPa～200 MPa之範圍內，亦可在上述範圍外。不過，紫外線照射前之23℃下之拉伸彈性模數較佳為未達1 MPa。其原因在於，能夠更牢靠地固定晶圓。 [安裝步驟] 首先，如圖2所示，將任意設置於切割帶一體型半導體背面用膜1之半導體背面用膜40上之隔離件適當地剝離，於該半導體背面用膜40上貼合半導體晶圓4，將其接著保持進行固定(步驟A)。此時，半導體背面用膜40處於未硬化狀態(包括半硬化狀態)。又，切割帶一體型半導體背面用膜1貼合於半導體晶圓4之背面。所謂半導體晶圓4之背面係指與電路面為相反側之面(亦稱為非電路面、非電極形成面等)。貼合方法無特別限定，較佳為利用壓接之方法。壓接通常一面利用壓接輥等按壓機構按壓一面進行。 [加熱步驟] 繼而，視需要為了使半導體背面用膜40向半導體晶圓4之固定牢固而進行烘焙(baking)(加熱)。藉此，使半導體背面用膜40硬化。該烘焙例如於80～150℃、0.1～24小時之條件下進行。 [鐳射標記步驟] 繼而，視需要如圖3所示，從切割帶2側使用鐳射標記用之鐳射36對半導體背面用膜40進行鐳射標記。作為鐳射標記之條件，無特別限定，較佳為於強度：0.3 W～2.0 W之條件下對半導體背面用膜40照射鐳射[波長：532 nm]。又，較佳為以此時之加工深度(深度)成為2 μm以上之方式進行照射。上述加工深度之上限無特別限制，例如可從2 μm～25 μm之範圍選擇，較佳為3 μm以上(3 μm～20 μm)，更佳為5 μm以上(5 μm～15 μm)。藉由將鐳射標記之條件設於上述數值範圍內，能夠發揮優異之鐳射標記性。 再者，半導體背面用膜40之鐳射加工性可藉由構成樹脂成分之種類或其含量、著色劑之種類或其含量、交聯劑之種類或其含量、填充材料之種類或其含量等進行控制。 [紫外線照射步驟] 繼而，如圖4所示，對黏著劑層22照射紫外線38(步驟B)。紫外線之照射係以紫外線照射後之黏著劑層之23℃下之拉伸彈性模數成為1 MPa～200 MPa之方式進行。作為具體之紫外線之照射量，較佳為例如200～600 mJ/cm2 之範圍內。又，紫外線之照射方向無特別限定，但較佳為從基材21側進行照射。其原因在於，通常基材21使用高效率地透過紫外線者，因此能夠有效地利用紫外線。 [切割步驟] 繼而，如圖5所示，進行半導體晶圓4之切割。切割係藉由刀片切割進行。藉此，將半導體晶圓4切斷成特定尺寸進行單片化(小片化)，製造半導體晶片5(步驟C)。切割例如從半導體晶圓4之電路面側按照常規方法進行。又，本步驟例如可採用切入至切割帶一體型半導體背面用膜1之被稱為全切之切斷方式等。作為本步驟中使用之切割裝置，無特別限定，可使用先前公知者。 黏著劑層22藉由步驟B於23℃下之拉伸彈性模數成為1 MPa～200 MPa。因此，具有某種程度之硬度。並且，於黏著劑層22具有某種程度之硬度之狀態下進行刀片切割，因此能夠抑制刀片切割時之摩擦或衝擊，能夠減少於晶片側面產生之龜裂。 又，黏著劑層22藉由步驟B於紫外線照射後之23℃下之拉伸彈性模數成為200 MPa以下，因此能夠抑制於切割時發生晶片飛散。 再者，於進行切割帶一體型半導體背面用膜1之擴張(expand)之情形時，該擴張可使用先前公知之擴張裝置進行。擴張裝置具有：可經由切割環將切割帶一體型半導體背面用膜1向下方壓下之甜甜圈狀外環、以及直徑小於外環且支持切割帶一體型半導體背面用膜之內環。藉由該擴張步驟，於下述之拾取步驟中，能夠防止相鄰之半導體晶片彼此接觸而發生破損。 [拾取步驟] 為了回收接著固定於切割帶一體型半導體背面用膜1之半導體晶片5，如圖6所示，進行半導體晶片5之拾取，將半導體晶片5與半導體背面用膜40一起從切割帶2剝離(步驟D)。作為拾取之方法，無特別限定，可採用先前公知之各種方法。例如可列舉如下方法等：藉由頂針(needle)從切割帶一體型半導體背面用膜1之基材21側將各個半導體晶片5頂起，藉由拾取裝置拾取被頂起之半導體晶片5。所拾取之半導體晶片5之背面被半導體背面用膜40保護。 [覆晶連接步驟] 所拾取之半導體晶片5如圖7所示，藉由覆晶接合方式(覆晶安裝方式)固定於基板等被接著體。具體而言，按照常規方法將半導體晶片5以半導體晶片5之電路面(亦稱為表面、電路圖案形成面、電極形成面等)與被接著體6對向之形態固定於被接著體6。例如，藉由使形成於半導體晶片5之電路面側之凸塊51與被接著於被接著體6之連接焊墊上之接合用之導電材料(焊錫等)61接觸一面按壓一面使導電材料熔融，能夠確保半導體晶片5與被接著體6之電氣導通，將半導體晶片5固定於被接著體6(覆晶接合步驟)。此時，於半導體晶片5與被接著體6之間形成有空隙，該空隙間距離一般為30 μm～300 μm左右。再者，將半導體晶片5覆晶接合(覆晶連接)至被接著體6上之後，可清洗半導體晶片5與被接著體6之對向面或間隙，向該間隙中填充密封材料(密封樹脂等)進行密封。 作為被接著體6，可使用引線框架或電路基板(配線電路基板等)等各種基板。作為此種基板之材質，並無特別限定，可列舉：陶瓷基板或塑膠基板。作為塑膠基板，例如可列舉：環氧基板、雙馬來醯亞胺三基板、聚醯亞胺基板等。 於覆晶接合步驟中，作為凸塊及導電材料之材質，無特別限定，例如可列舉：錫-鉛系金屬材料、錫-銀系金屬材料、錫-銀-銅系金屬材料、錫-鋅系金屬材料、錫-鋅-鉍系金屬材料等焊錫類(合金)、或金系金屬材料、銅系金屬材料等。 再者，於覆晶接合步驟中，使導電材料熔融而連接半導體晶片5之電路面側之凸塊與被接著體6之表面之導電材料，作為該導電材料之熔融時之溫度，通常為260℃左右(例如250℃～300℃)。本發明之切割帶一體型半導體背面用膜藉由利用環氧樹脂等形成半導體背面用膜，能夠製成具有連該覆晶接合步驟中之高溫亦能夠耐受之耐熱性者。 本步驟較佳為進行半導體晶片5與被接著體6之對向面(電極形成面)或間隙之清洗。作為該清洗中使用之清洗液，無特別限制，例如可列舉有機系之清洗液或水系之清洗液。本發明之切割帶一體型半導體背面用膜中之半導體背面用膜具有對清洗液之耐溶劑性，對該等清洗液實質上不具有溶解性。因此，如上所述，作為清洗液，可使用各種清洗液，不需要特別之清洗液，可藉由先前之方法進行清洗。 繼而，視需要進行用以將經覆晶接合之半導體晶片5與被接著體6之間之間隙密封之密封步驟。密封步驟係使用密封樹脂進行。作為此時之密封條件，無特別限定，通常藉由於175℃下進行60秒～90秒之加熱而進行密封樹脂之熱硬化(回焊)，但本發明不限於此，例如可於165℃～185℃下固化(cure)數分鐘。於該步驟之熱處理中，亦可不僅進行密封樹脂之熱硬化，同時亦進行半導體背面用膜40之熱硬化。於該情形時，不需要新追加用以使半導體背面用膜40熱硬化之步驟。不過，於本發明中不限於此例，亦可於密封樹脂之熱硬化之前另行進行使半導體背面用膜40熱硬化之步驟。 作為上述密封樹脂，只要為具有絕緣性之樹脂(絕緣樹脂)則無特別限制，可從公知之密封樹脂等密封材料中適當選擇並使用，更佳為具有彈性之絕緣樹脂。作為密封樹脂，例如可列舉含有環氧樹脂之樹脂組合物等。作為環氧樹脂，可列舉上述例示之環氧樹脂等。又，作為由含有環氧樹脂之樹脂組合物構成之密封樹脂，樹脂成分除了環氧樹脂以外，亦可含有環氧樹脂以外之熱硬化性樹脂(酚系樹脂等)或熱塑性樹脂等。再者，作為酚系樹脂，亦可用作環氧樹脂之硬化劑，作為此種酚系樹脂，可列舉上述例示之酚系樹脂等。 又，於上述實施形態中，對向半導體晶片5與被接著體6之間之空隙中填充液狀之密封材料(密封樹脂等)進行密封之情形進行了說明，但本發明不限於此例，亦可使用片狀樹脂組合物。關於使用片狀樹脂組合物對半導體晶片與被接著體之間之空隙進行密封之方法，例如可採用日本專利特開2001-332520號公報等先前公知之方法。因此，此處省略詳細說明。 再者，上述密封步驟之後，亦可視需要進行熱處理(鐳射標記之後進行之回焊步驟)。作為該熱處理條件，無特別限定，可按照半導體技術協會(JEDEC)所規定之標準進行。例如可於溫度(上限)為210～270℃之範圍、時間為5～50秒之條件下進行。藉由該步驟，可將半導體封裝體安裝於基板(母板等)。 使用本發明之切割帶一體型半導體背面用膜所製造之半導體裝置由於為以覆晶安裝方式安裝之半導體裝置，因此為較以黏晶安裝方式安裝之半導體裝置薄型化、小型化之形狀。因此，可較佳地用作各種電子設備·電子零件或該等之材料·構件。具體而言，作為利用本發明之覆晶安裝之半導體裝置之電子設備，可列舉：所謂之「行動電話」或「PHS(Personal Handy-phone System，個人手持式電話系統)」、小型電腦(例如所謂之「PDA(Personal Digital Assistant，個人數位助理)」(攜帶型資訊終端)、所謂之「筆記型電腦」、所謂之「NETBOOK(商標)」、所謂之「可佩戴式電腦」等)、「行動電話」及電腦一體化之小型電子設備、所謂之「DIGITAL CAMERA(商標)」、所謂之「數位攝錄影機」、小型電視機、小型遊戲機、小型數位影音播放器、所謂之「電子記事本」、所謂之「電子辭典」、所謂之「電子書」用電子設備終端、小型數位型鐘錶等行動型電子設備(可攜帶之電子設備)等，當然亦可為行動型以外(設置型等)之電子設備(例如所謂之「桌上型電腦」、薄型電視機、錄影·播放用電子設備(硬碟記錄器、DVD播放器等)、投影儀、微型機械等)等。又，作為電子零件或電子設備·電子零件之材料·構件，例如可列舉：所謂之「CPU(Central Processing Unit，中央處理單元)」之構件、各種記憶裝置(所謂之「記憶體」、硬碟等)之構件等。 以上對第1實施形態之半導體裝置之製造方法進行了說明。 [第2實施形態] 第2實施形態之半導體裝置之製造方法係於第3本發明之半導體裝置之製造方法中，先進行步驟B，其後進行步驟A之情形。 第2實施形態之半導體裝置之製造方法至少具有如下步驟： 步驟B，以使上述黏著劑層之23℃下之拉伸彈性模數成為1 MPa～200 MPa之方式對上述黏著劑層照射紫外線； 步驟A，於上述步驟B之後，於上述切割帶一體型半導體背面用膜之上述覆晶型半導體背面用膜上貼合半導體晶圓； 步驟C，於上述步驟A及上述步驟B之後，對上述半導體晶圓進行刀片切割而形成半導體元件；及 步驟D，將上述半導體元件與上述覆晶型半導體背面用膜一起從上述黏著劑層剝離。 第2實施形態中，與第1實施形態同樣地使用上述(1)之情形之切割帶一體型半導體背面用膜1。即，第2實施形態之黏著劑層22於紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa。 [紫外線照射步驟] 首先，對黏著劑層22照射紫外線(步驟B)。紫外線之照射係以紫外線照射後之黏著劑層之23℃下之拉伸彈性模數成為1 MPa～200 MPa之方式進行。具體之紫外線之照射量或紫外線之照射方向可設為與第1實施形態同樣。 [安裝步驟] 繼而，於切割帶一體型半導體背面用膜1之半導體背面用膜40上貼合半導體晶圓4，將其接著保持進行固定(步驟A)。 繼而，視需要為了使半導體背面用膜40向半導體晶圓40之固定牢固而進行烘焙(加熱)。藉此，使半導體背面用膜40硬化。該烘焙例如於80～150℃、0.1～24小時之條件下進行。 [鐳射標記步驟] 繼而，視需要從切割帶2側使用鐳射標記用之鐳射36對半導體背面用膜40進行鐳射標記。作為鐳射標記之條件，可設為與第1實施形態同樣。 [切割步驟] 繼而，進行半導體晶圓4之切割。該步驟可設為與第1實施形態同樣。 黏著劑層22藉由步驟B於23℃下之拉伸彈性模數成為1 MPa～200 MPa。因此，具有某種程度之硬度。並且，於黏著劑層22具有某種程度之硬度之狀態下進行刀片切割，因此能夠抑制刀片切割時之摩擦或衝擊，能夠減少於晶片側面產生之龜裂。 又，黏著劑層22藉由步驟B於紫外線照射後之23℃下之拉伸彈性模數成為200 MPa以下，因此能夠抑制於切割時發生晶片飛散。 再者，切割步驟之後與第1實施形態同樣，因此此處之說明省略。 第2實施形態中，若於對黏著劑層22照射紫外線後進行加熱步驟，則有由於該熱而使未由環狀框固定之部分(切割帶2之中央部分)與晶圓一起下垂之情形。然而，若對切割帶2進行擴張則能夠消除該彎曲，因此不會產生大問題。另一方面，於切割步驟時，已完成紫外線照射，於23℃下之拉伸彈性模數成為1 MPa～200 MPa，因此能夠抑制刀片切割時之摩擦或衝擊，能夠減少於晶片側面產生之龜裂。 [第3實施形態] 第3實施形態之半導體裝置之製造方法至少具有如下步驟： 步驟X，準備切割帶一體型半導體背面用膜，上述切割帶一體型半導體背面用膜具備：具有基材及形成於上述基材上之黏著劑層之切割帶、以及形成於上述切割帶之上述黏著劑層上之覆晶型半導體背面用膜，且上述黏著劑層之23℃下之拉伸彈性模數為1 MPa～200 MPa； 步驟A，於上述切割帶一體型半導體背面用膜之上述覆晶型半導體背面用膜上貼合半導體晶圓； 步驟C，於上述步驟A之後，對上述半導體晶圓進行刀片切割而形成半導體元件。 第3實施形態中，使用上述(2)之情形之切割帶一體型半導體背面用膜1。即，第3實施形態之黏著劑層22於23℃下之拉伸彈性模數為1 MPa～200 MPa。 [準備步驟] 首先，準備上述(2)之情形之切割帶一體型半導體背面用膜1(步驟X)。 [安裝步驟] 繼而，於切割帶一體型半導體背面用膜1之半導體背面用膜40上貼合半導體晶圓4，將其接著保持進行固定(步驟A)。 繼而，視需要為了使半導體背面用膜40向半導體晶圓40之固定牢固而進行烘焙(加熱)。藉此，使半導體背面用膜40硬化。該烘焙例如於80～150℃、0.1～24小時之條件下進行。 [鐳射標記步驟] 繼而，視需要從切割帶2側使用鐳射標記用之鐳射36對半導體背面用膜40進行鐳射標記。作為鐳射標記之條件，可設為與第1實施形態同樣。 [切割步驟] 繼而，進行半導體晶圓4之切割。該步驟可設為與第1實施形態同樣。 黏著劑層22於23℃下之拉伸彈性模數為1 MPa～200 MPa。因此，具有某種程度之硬度。並且，於黏著劑層22具有某種程度之硬度之狀態下進行刀片切割，因此能夠抑制刀片切割時之摩擦或衝擊，能夠減少於晶片側面產生之龜裂。 又，黏著劑層22於23℃下之拉伸彈性模數為200 MPa以下，因此能夠抑制於切割時發生晶片飛散。 [拾取步驟] 繼而，為了回收接著固定於切割帶一體型半導體背面用膜1之半導體晶片5，進行半導體晶片5之拾取，將半導體晶片5與半導體背面用膜40一起從切割帶2剝離。再者，於使用紫外線硬化型黏著劑作為構成黏著劑層22之黏著劑之情形時，亦可照射紫外線之後進行拾取。藉此，能夠容易地進行拾取。 再者，拾取步驟之後與第1實施形態同樣，因此此處之說明省略。 以上對第3實施形態之半導體裝置之製造方法進行了說明。 [實施例] 以下例示性地對本發明之較佳之實施例進行詳細說明。其中，該實施例中記載之材料或調配量等只要無特別限定性之記載，則並不旨在將本發明之要旨僅限定於該等。又，以下記載為份之情形意指重量份。 首先，對實施例、比較例之切割帶一體型半導體背面用膜之製造方法進行以下說明。 再者，實施例1～3、實施例5之切割帶一體型半導體背面用膜假定用於上述之第1實施形態之半導體裝置之製造方法，實施例6假定用於第2實施形態之半導體裝置之製造方法，實施例4假定用於第3實施形態之半導體裝置之製造方法。 (實施例1) ＜半導體背面用膜之製作＞ 相對於丙烯酸酯共聚物(Nagase ChemteX公司製造，SG70L)之固形物成分100份，將環氧樹脂(三菱化學股份有限公司製造，JER YL980)20份、環氧樹脂(東都化成公司製造，KI-3000)50份、酚系樹脂(明和化成公司製造，MEH7851-SS)75份、球狀二氧化矽(商品名「SO-25R」，Admatechs股份有限公司製造，平均粒徑0.5 μm)180份、染料(Orient Chemical Industries公司製造，OILBKACK BS)10份、及熱硬化促進觸媒(四國化成公司製造，2PHZ)20份溶解於甲基乙基酮中，以固形物成分濃度成為23.6重量%之方式製備樹脂組合物之溶液。 將該樹脂組合物之溶液塗佈於作為剝離襯墊之包含經過聚矽氧脫模處理之厚度為50 μm之聚對苯二酸乙二酯膜(三菱樹脂製造，Diafoil MRA50)之脫模處理膜上，然後於130℃下乾燥2分鐘，藉此製作厚度(平均厚度)20 μm之半導體背面用膜A。 ＜切割帶之製作＞ 向具備冷凝管、氮氣導入管、溫度計及攪拌裝置之反應容器中投入丙烯酸2-乙基己酯(以下亦稱為「2EHA」)100份、丙烯酸2-羥基乙酯(以下亦稱為「HEA」)19份、過氧化苯甲醯0.4份及甲苯80份，於氮氣氣流中於60℃下進行10小時聚合處理，獲得丙烯酸系聚合物A。 向丙烯酸系聚合物A中加入2-甲基丙烯醯氧基乙基異氰酸酯(以下亦稱為「MOI」)12份，於空氣氣流中於50℃下進行60小時加成反應處理，獲得丙烯酸系聚合物A'。 繼而，相對於丙烯酸系聚合物A' 100份(固形物成分)，向甲苯中加入聚異氰酸酯化合物(商品名「CORONATE L」，Nippon Polyurethane股份有限公司製造)2份、紫外線反應型交聯劑(日本工業化學股份有限公司製造，紫光UV1700TL)20份、及光聚合起始劑(IRGACURE 369，Ciba Specialty Chemicals公司製造)2份，以固形物成分濃度成為28%之方式製作黏著劑溶液(亦稱為「黏著劑溶液A」)。 將上述中製備之黏著劑溶液A塗佈於PET剝離襯墊之實施有聚矽氧處理之面上，於120℃下加熱乾燥2分鐘，形成厚度30 μm之黏著劑層A。繼而，將厚度80 μm之聚丙烯膜貼合於黏著劑層A之露出面，於23℃下保存72小時，獲得切割片材A。 ＜切割帶一體型半導體背面用膜＞ 使用手壓輥將半導體背面用膜A貼合於所製作之切割帶A之黏著劑層上，製作實施例1之切割帶一體型半導體背面用膜A。 (實施例2) ＜切割帶之製作＞ 相對於實施例1中製作之丙烯酸系聚合物A' 100份(固形物成分)，向甲苯中加入聚異氰酸酯化合物(商品名「CORONATE L」，Nippon Polyurethane股份有限公司製造)2份、及光聚合起始劑(IRGACURE 369，Ciba Specialty Chemicals公司製造)2份，以固形物成分濃度成為28%之方式製作黏著劑溶液(亦稱為「黏著劑溶液B」)。 將上述中製備之黏著劑溶液B塗佈於PET剝離襯墊之實施有聚矽氧處理之面上，於120℃下加熱乾燥2分鐘，形成厚度30 μm之黏著劑層B。繼而，將厚度80 μm之聚丙烯膜貼合於黏著劑層B之露出面，於23℃下保存72小時，獲得切割片材B。 ＜切割帶一體型半導體背面用膜＞ 使用手壓輥將半導體背面用膜A貼合於所製作之切割帶B之黏著劑層上，製作實施例2之切割帶一體型半導體背面用膜B。 (實施例3) ＜切割帶之製作＞ 相對於實施例1中製作之丙烯酸系聚合物A' 100份(固形物成分)，向甲苯中加入聚異氰酸酯化合物(商品名「CORONATE L」，Nippon Polyurethane股份有限公司製造)2份、及光聚合起始劑(IRGACURE 369，Ciba Specialty Chemicals公司製造)0.06份，以固形物成分濃度成為28%之方式製作黏著劑溶液(亦稱為「黏著劑溶液C」)。 將上述中製備之黏著劑溶液C塗佈於PET剝離襯墊之實施有聚矽氧處理之面上，於120℃下加熱乾燥2分鐘，形成厚度30 μm之黏著劑層C。繼而，將厚度80 μm之聚丙烯膜貼合於黏著劑層C之露出面，於23℃下保存72小時，獲得切割片材C。 ＜切割帶一體型半導體背面用膜＞ 使用手壓輥將半導體背面用膜A貼合於所製作之切割帶C之黏著劑層上，製作實施例3之切割帶一體型半導體背面用膜C。 (實施例4) ＜切割帶之製作＞ 相對於實施例1中製作之丙烯酸系聚合物A' 100份(固形物成分)，向甲苯中加入聚異氰酸酯化合物(商品名「CORONATE L」，Nippon Polyurethane股份有限公司製造)8份、及光聚合起始劑(IRGACURE 369，Ciba Specialty Chemicals公司製造)2份，以固形物成分濃度成為28%之方式製作黏著劑溶液(亦稱為「黏著劑溶液D」)。 將上述中製備之黏著劑溶液D塗佈於PET剝離襯墊之實施有聚矽氧處理之面上，於120℃下加熱乾燥2分鐘，形成厚度30 μm之黏著劑層D。繼而，將厚度80 μm之聚丙烯膜貼合於黏著劑層D之露出面，於23℃下保存72小時，獲得切割片材D。 ＜切割帶一體型半導體背面用膜＞ 使用手壓輥將半導體背面用膜A貼合於所製作之切割帶D之黏著劑層上，製作實施例4之切割帶一體型半導體背面用膜D。 (實施例5) ＜半導體背面用膜之製作＞ 相對於丙烯酸酯共聚物(Nagase ChemteX公司製造，SG70L)之固形物成分100份，將環氧樹脂(三菱化學股份有限公司製造，JER YL980)140份、環氧樹脂(東都化成公司製造，KI-3000)140份、酚系樹脂(明和化成公司製造，MEH7851-SS)290份、球狀二氧化矽(商品名「SO-25R」，Admatechs股份有限公司製造，平均粒徑0.5 μm)470份、染料(Orient Chemical Industries公司製造，OILBKACK BS)10份、及熱硬化促進觸媒(四國化成公司製造，2PHZ)20份溶解於甲基乙基酮中，以固形物成分濃度成為23.6重量%之方式製備樹脂組合物之溶液。 將該樹脂組合物之溶液塗佈於作為剝離襯墊之包含經過聚矽氧脫模處理之厚度為50 μm之聚對苯二酸乙二酯膜(三菱樹脂製造，Diafoil MRA50)之脫模處理膜上，然後於130℃下乾燥2分鐘，藉此製作厚度(平均厚度)20 μm之半導體背面用膜B。 ＜切割帶一體型半導體背面用膜＞ 使用手壓輥將半導體背面用膜B貼合於實施例2中製作之切割帶B之黏著劑層上，製作實施例5之切割帶一體型半導體背面用膜E。 (實施例6) ＜切割帶一體型半導體背面用膜＞ 使用手壓輥將實施例1中製作之半導體背面用膜A貼合於實施例2中製作之切割帶B之黏著劑層上。繼而，使用紫外線照射裝置(高壓水銀燈)，從切割帶側以成為300 mJ/cm2 之方式對切割帶表面照射紫外線，使黏著劑硬化。藉由以上操作，製作實施例6之切割帶一體型半導體背面用膜F。 (比較例1) ＜切割帶之製作＞ 相對於實施例1中製作之丙烯酸系聚合物A' 100份(固形物成分)，向甲苯中加入聚異氰酸酯化合物(商品名「CORONATE L」，Nippon Polyurethane股份有限公司製造)4份，以固形物成分濃度成為28%之方式製作黏著劑溶液(亦稱為「黏著劑溶液G」)。 將上述中製備之黏著劑溶液G塗佈於PET剝離襯墊之實施有聚矽氧處理之面上，於120℃下加熱乾燥2分鐘，形成厚度30 μm之黏著劑層G。繼而，將厚度80 μm之聚丙烯膜貼合於黏著劑層G之露出面，於23℃下保存72小時，獲得切割片材G。 ＜切割帶一體型半導體背面用膜＞ 使用手壓輥將半導體背面用膜A貼合於所製作之切割帶G之黏著劑層上，製作比較例1之切割帶一體型半導體背面用膜G。 (比較例2) ＜切割帶之製作＞ 相對於實施例1中製作之丙烯酸系聚合物A' 100份(固形物成分)，向甲苯中加入聚異氰酸酯化合物(商品名「CORONATE L」，Nippon Polyurethane股份有限公司製造)2份，以固形物成分濃度成為28%之方式製作黏著劑溶液(亦稱為「黏著劑溶液H」)。 將上述中製備之黏著劑溶液H塗佈於PET剝離襯墊之實施有聚矽氧處理之面上，於120℃下加熱乾燥2分鐘，形成厚度30 μm之黏著劑層H。繼而，將厚度80 μm之聚丙烯膜貼合於黏著劑層H之露出面，於23℃下保存72小時，獲得切割片材H。 ＜切割帶一體型半導體背面用膜＞ 使用手壓輥將半導體背面用膜B貼合於所製作之切割帶H之黏著劑層上，製作比較例2之切割帶一體型半導體背面用膜H。 (比較例3) ＜切割帶之製作＞ 相對於實施例1中製作之丙烯酸系聚合物A' 100份(固形物成分)，向甲苯中加入聚異氰酸酯化合物(商品名「CORONATE L」，Nippon Polyurethane股份有限公司製造)2份、及丙烯酸2-羥基乙酯10份，以固形物成分濃度成為28%之方式製作黏著劑溶液(亦稱為「黏著劑溶液I」)。 將上述中製備之黏著劑溶液I塗佈於PET剝離襯墊之實施有聚矽氧處理之面上，於120℃下加熱乾燥2分鐘，形成厚度30 μm之黏著劑層I。繼而，將厚度80 μm之聚丙烯膜貼合於黏著劑層I之露出面，於23℃下保存72小時，獲得切割片材I。 ＜切割帶一體型半導體背面用膜＞ 使用手壓輥將半導體背面用膜A貼合於所製作之切割帶I之黏著劑層上，製作比較例3之切割帶一體型半導體背面用膜I。 [紫外線照射前之黏著劑層之彈性模數、及紫外線照射後之黏著劑層之彈性模數之測定] 以拉伸試驗之樣品尺寸成為初始長度(夾盤(chuck)間距離)10 mm、截面積0.1～0.5 mm2 之方式製備試片，於測定溫度23℃下以拉伸速度50 mm/min進行拉伸試驗，測定樣品伸長之變化量(mm)。其結果，於獲得之S-S曲線之初始之上升部分畫出切線，將相當於該切線為100%伸長率時之拉伸強度除以基材之截面積，而設為紫外線照射前之拉伸彈性模數。再者，關於UV照射後之拉伸彈性模數之測定，使用UV照射裝置(日東精機(商品名UM-810))以UV照射累積光量成為300 mJ/cm2 之方式從切割帶之基材側照射紫外線後進行。將結果示於表1。 [熱硬化後之半導體背面用膜之彈性模數之測定] 於120℃下對半導體背面用膜進行2小時加熱，其後除去剝離襯墊。繼而，從加熱後之半導體背面用膜切取寬度10 mm、長度22.5 mm、厚度0.02 mm之樣品。繼而，使用Rheometric公司製造之動態黏彈性測定裝置「Solid Analyzer RS A2」，於拉伸模式、頻率1 Hz、升溫速度10℃/分鐘、氮氣環境下從0℃至100℃之間進行動態黏彈性測定。 讀取此時之23℃下之數值。將結果示於表1。 [剝離力之測定] 關於實施例1～3、實施例5、實施例6，使用UV照射裝置(日東精機(商品名UM-810))以UV照射累積光量成為300 mJ/cm2 之方式從切割帶之基材側對所製作之切割帶一體型半導體背面用膜照射紫外線。繼而，於常溫下將膠帶(日東電工股份有限公司製造，商品名：BT-315)貼合於半導體背面用膜側進行補強。利用切割刀切斷成20 mm寬×120 mm長。其後，將切割帶之黏著劑層及半導體背面用膜夾住，於23℃下，使用拉伸試驗機(島津製作所股份有限公司製造，商品名：AGS-J)，以剝離速度300 mm/min藉由T型剝離試驗將黏著劑層與半導體背面用膜剝離，讀取此時之力(最大負荷，單位：N/20 mm)。 關於實施例4、比較例1～3，於常溫下將膠帶(日東電工股份有限公司製造，商品名：BT-315)貼合於所製作之切割帶一體型半導體背面用膜之半導體背面用膜側進行補強。利用切割刀切斷成20 mm寬×120 mm長。其後，將切割帶之黏著劑層及半導體背面用膜夾緊，於23℃下，使用拉伸試驗機(島津製作所股份有限公司製造，商品名：AGS-J)，以剝離速度300 mm/min藉由T型剝離試驗將黏著劑層與半導體背面用膜剝離，讀取此時之力(最大負荷，單位：N/20 mm)。將結果示於表1。 再者，該剝離力測定假設為切割時(拾取時)之剝離力。 [切割時之黏著劑層之彈性模數與半導體背面用膜之彈性模數之比] 於使用實施例1～3、實施例5、實施例6之切割帶一體型半導體背面用膜製造半導體裝置之情形時，於切割時，黏著劑層為紫外線照射後之狀態，半導體背面用膜經熱硬化。因此，關於實施例1～3、實施例5、實施例6，將紫外線照射後之黏著劑之彈性模數與熱硬化後之半導體背面用膜之彈性模數之比示於表1。 又，於使用實施例4、比較例1～3之切割帶一體型半導體背面用膜製造半導體裝置之情形時，於切割時，黏著劑未經紫外線照射，半導體背面用膜經熱硬化。因此，關於實施例4、比較例1～3，將紫外線照射前之黏著劑之彈性模數與熱硬化後之半導體背面用膜之彈性模數之比示於表1。 再者，切割時之黏著劑層之彈性模數與半導體背面用膜之彈性模數之比係藉由下式求出。 [切割時之黏著劑層之彈性模數與半導體背面用膜之彈性模數之比]＝(半導體背面用膜之彈性模數/黏著劑層之彈性模數) [碎片(chipping)評價] 首先，對半導體晶圓(直徑8英吋、厚度0.6 mm；裸矽晶圓)進行背面研磨，準備厚度0.2 mm之鏡面晶圓。 ＜關於實施例1～3、實施例5＞ 繼而，關於實施例1～3、實施例5，從切割帶一體型半導體背面用膜將剝離襯墊剝離，然後於70℃下將上述鏡面晶圓輥壓接於其半導體背面用膜上從而貼合，製成附切割帶一體型半導體背面用膜之半導體晶圓。繼而，於120℃下加熱2小時。繼而，使用UV照射裝置(日東精機(商品名UM-810))以UV照射累積光量成為300 mJ/cm2 之方式從切割帶之基材側照射紫外線。繼而，切割晶圓而獲得矽晶片。晶圓研磨條件、貼合條件、切割條件如下所述。 再者，切口深度Z1係以自矽晶片表面起之深度成為45 μm之方式進行調整。又，切口深度Z2係以直至達到切割帶之黏著劑層厚度之1/2之方式進行調整。 (晶圓研磨條件) 研磨裝置：商品名「DFG-8560」，DISCO公司製造 (貼合條件) 貼附裝置：商品名「MA-3000III」，日東精機公司製造 貼附速度計：10 mm/min 貼附壓力：0.15 MPa 貼附時之載台溫度：70℃ (切割條件) 切割裝置：商品名「DFD-6361」，DISCO公司製造 切割環：「2-8-1」(DISCO公司製造) 切割速度：30 mm/sec 切割刀片： Z1：DISCO公司製造「203O-SE 27HCDD」 Z2：DISCO公司製造「203O-SE 27HCBB」 切割刀片轉數： Z1：40,000 r/min Z2：45,000 r/min 切割方式：步進切割 晶片尺寸：2.0 mm見方 繼而，將矽晶片與半導體背面用膜一起剝離(拾取)。利用顯微鏡(Keyence公司製造，VHX500)觀察矽晶片之切斷面(4個切斷面中最後被切斷之面)，測定裂紋之深度。所謂裂紋之深度係指自半導體背面用膜與矽晶片之界面起之深度。於將矽晶片之厚度設為100%時，將裂紋之深度未達10%之情形判定為◎。將裂紋之深度為10%以上且未達12%之情形判定為○。將裂紋之深度為12%以上之情形判定為×。將結果示於表1。 ＜關於實施例6＞ 關於實施例6，首先，使用UV照射裝置(日東精機(商品名UM-810))以UV照射累積光量成為300 mJ/cm2 之方式從切割帶之基材側對切割帶一體型半導體背面用膜照射紫外線。繼而，從切割帶一體型半導體背面用膜將剝離襯墊剝離，然後於70℃下將上述鏡面晶圓輥壓接於其半導體背面用膜上從而貼合，製成附切割帶一體型半導體背面用膜之半導體晶圓。繼而，於120℃下加熱2小時。繼而，切割晶圓而獲得矽晶片。晶圓研磨條件、貼合條件、切割條件設為與上述實施例1～3、實施例5同樣。 繼而，將矽晶片與半導體背面用膜一起剝離(拾取)。利用顯微鏡(Keyence公司製造，VHX500)觀察矽晶片之切斷面(4個切斷面中最後被切斷之面)，測定裂紋之深度。於將矽晶片之厚度設為100%時，將裂紋之深度未達10%之情形判定為◎。將裂紋之深度為10%以上且未滿12%之情形判定為○。將裂紋之深度為12%以上之情形判定為×。將結果示於表1。 ＜關於實施例4、比較例1～3＞ 關於實施例4、比較例1～3，從切割帶一體型半導體背面用膜將剝離襯墊剝離，然後於70℃下將上述鏡面晶圓輥壓接於其半導體背面用膜上從而貼合，製成附切割帶一體型半導體背面用膜之半導體晶圓。繼而，切割晶圓而獲得矽晶片。晶圓研磨條件、貼合條件、切割條件設為與上述實施例1～3、實施例5同樣。 繼而，將矽晶片與半導體背面用膜一起剝離(拾取)。利用顯微鏡(Keyence公司製造，VHX500)觀察矽晶片之切斷面(4個切斷面中最後被切斷之面)，測定裂紋之深度。於將矽晶片之厚度設為100%時，將裂紋之深度未達10%之情形判定為◎。將裂紋之深度為10%以上且未達12%之情形判定為○。將裂紋之深度為12%以上之情形判定為×。將結果示於表1。 [表1] (Film for dicing tape-integrated semiconductor back surface) A film for a dicing tape-integrated semiconductor back surface according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing an example of a dicing tape-integrated semiconductor back film according to an embodiment of the present invention. As shown in FIG. 1, the dicing tape-integrated semiconductor back film 1 is a dicing tape 2 provided with an adhesive layer 22 on a substrate 21 and a flip-chip semiconductor back film 40 (hereinafter also referred to as “semiconductor back”). Film 40 ″). In addition, as shown in FIG. 1, the dicing tape-integrated semiconductor back film of the present invention may be a portion 23 (hereinafter, also referred to as “ The wafer attachment portion 23 ″) is formed with a flip-chip semiconductor backside film 40, and may be a structure in which a semiconductor backside film is formed on the entire surface of the adhesive layer. A portion of the wafer bonding portion and a portion smaller than the entire surface of the adhesive layer is formed with a film for semiconductor back surface. Furthermore, the surface of the film for semiconductor back surface (the surface to be bonded to one side of the back surface of the wafer) can be protected by a spacer or the like before bonding to the back surface of the wafer. (Film for flip-chip semiconductor back surface) The flip-chip semiconductor back film 40 (semiconductor back film 40) is preferably formed by containing a thermosetting resin and a thermoplastic resin. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polymer Butadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, PET (polyethylene terephthalate) Esters), saturated polyester resins such as PBT (polybutylene terephthalate), polyamidoamine imine resins, or fluororesins. The thermoplastic resin can be used alone or in combination of two or more. Among these thermoplastic resins, acrylic resins having less ionic impurities and high heat resistance, and capable of ensuring the reliability of semiconductor devices are particularly preferred. The acrylic resin is not particularly limited, and examples thereof include those having a carbon number of 30 or less (preferably 4 to 18 carbons, more preferably 6 to 10 carbons, and most preferably 8 or 9 carbons). A polymer having one or two or more types of acrylic acid or methacrylic acid ester of a chain or branched alkyl group as a component. That is, in the present invention, the term "acrylic resin" means a broad meaning including methacrylic resin. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, third butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, and 2-ethyl. Hexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, dodecyl (lauryl), tridecyl, tetradecyl, stearyl And octadecyl. In addition, the other monomers (monomers other than acrylic acid or alkyl esters of methacrylic acid having an alkyl group of 30 or less in carbon number) for forming the acrylic resin are not particularly limited, and examples thereof include acrylic acid. , Methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, Ikonic acid, maleic acid, fumaric acid, or crotonic acid, and other carboxyl group-containing monomers; such as maleic anhydride or itaconic acid anhydride monomers; Such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, (meth) acrylic acid Hydroxyl-containing monomers such as 8-hydroxyoctyl ester, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, or (4-hydroxymethylcyclohexyl) methyl acrylate; such as styrene Sulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate or (methyl) ) Sulfuric acid group-containing monomers such as acrylic fluorenol naphthalenesulfonic acid; phosphate-containing monomers such as 2-hydroxyethylacrylfluorenyl phosphate; acrylonitrile, acrylofluorenylline, and the like. The term "(meth) acrylic acid" refers to acrylic acid and / or methacrylic acid, and the term "(meth)" in the present invention has the same meaning. Examples of the thermosetting resin include an amine resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide in addition to the epoxy resin and the phenol resin. Resin, etc. The thermosetting resin can be used alone or in combination of two or more. The thermosetting resin is particularly preferably an epoxy resin with a low content of ionic impurities and the like that can corrode semiconductor elements. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is used suitably. The epoxy resin is not particularly limited, and examples thereof include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, brominated bisphenol A epoxy resin, and hydrogenated bisphenol A epoxy resin. Phenol A type epoxy resin, bisphenol AF type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, o-cresol novolac type epoxy resin Resin, trihydroxyphenylmethane type epoxy resin, tetraphenol-based ethane type epoxy resin and other bifunctional epoxy resins or polyfunctional epoxy resins; or hydantoin type epoxy resin, isocyanuric acid trishrink An epoxy resin such as a glyceride-type epoxy resin or a glycidylamine-type epoxy resin. As the epoxy resin, in the above examples, novolac epoxy resin, biphenyl epoxy resin, trihydroxyphenylmethane epoxy resin, and tetraphenol ethane epoxy resin are particularly preferred. The reason is that these epoxy resins are rich in reactivity with a phenol resin as a hardener, and are excellent in heat resistance and the like. Further, the phenolic resins function as hardeners of the epoxy resin, and examples thereof include phenol novolac resin, phenol aralkyl resin, cresol novolac resin, third butyl novolac resin, and nonyl Novolac phenolic resins such as phenol novolac resins; soluble phenolic phenolic resins; polyhydroxystyrenes such as polyparahydroxystyrene. The phenol resin can be used alone or in combination of two or more. Among these phenol resins, phenol novolak resin and phenol aralkyl resin are particularly preferred. This is because the connection reliability of the semiconductor device can be improved. Regarding the blending ratio of the epoxy resin and the phenol-based resin, for example, the blending ratio is preferably such that the hydroxyl group in the phenol-based resin is 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More preferably, it is 0.8 to 1.2 equivalents. That is, the reason is that if the blending ratio of the two deviates from the above range, a sufficient curing reaction cannot be performed, and the characteristics of the epoxy resin cured product tend to deteriorate. In the present invention, a thermosetting accelerator for an epoxy resin and a phenol resin may be used. There is no restriction | limiting in particular as a thermosetting accelerator, It can select suitably from a well-known thermosetting accelerator, and can use it. The thermosetting accelerator can be used alone or in combination of two or more. As the thermosetting accelerator, for example, an amine-based hardening accelerator, an phosphorus-based hardening accelerator, an imidazole-based hardening accelerator, a boron-based hardening accelerator, a phosphorus-boron-based hardening accelerator, or the like can be used. The film 40 for semiconductor back surface is preferably formed of a resin composition containing an epoxy resin and a phenol resin, or a resin composition containing an epoxy resin, a phenol resin, and an acrylic resin. Since these resins have less ionic impurities and high heat resistance, they can ensure the reliability of semiconductor devices. It is important that the film 40 for semiconductor back surface has adhesiveness (adhesion) to the back surface (circuit non-formation surface) of a semiconductor wafer. The film 40 for semiconductor back surface can be formed with the resin composition containing the epoxy resin which is a thermosetting resin, for example. In order to cross-link the film 40 for semiconductor back surface in advance to some extent, a polyfunctional compound that reacts with a functional group at the end of the molecular chain of the polymer may be added in advance as a cross-linking agent. Thereby, the adhesion characteristics at high temperatures can be improved, and the heat resistance can be improved. The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specific examples include an isocyanate-based cross-linking agent, an epoxy-based cross-linking agent, a melamine-based cross-linking agent, and a peroxide-based cross-linking agent. Examples include a urea-based cross-linking agent and a metal alkoxide-based cross-linking agent. Crosslinking agent, metal chelate crosslinking agent, metal salt crosslinking agent, carbodiimide crosslinking agent, oxazoline crosslinking agent, aziridine crosslinking agent, amine crosslinking Agent. The crosslinking agent is preferably an isocyanate-based crosslinking agent or an epoxy-based crosslinking agent. Moreover, the said crosslinking agent can be used individually or in combination of 2 or more types. Examples of the isocyanate-based crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate. Cyclopentyl diisocyanate, cyclohexyl diisocyanate, isophorone diisocyanate, hydrogenated toluene diisocyanate, hydrogenated xylene diisocyanate and other alicyclic polyisocyanates; 2,4-toluene diisocyanate, 2,6- Aromatic polyisocyanates such as toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, xylylene diisocyanate, etc. In addition, trimethylolpropane / toluene diisocyanate trimer adducts can also be used. [Manufactured by Nippon Polyurethane Industry Co., Ltd., trade name "CORONATE L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [manufactured by Nippon Polyurethane Industry Co., Ltd., trade name "CORONATE HL" ]Wait. Examples of the epoxy-based crosslinking agent include N, N, N ', N'-tetraglycidyl-m-xylylenediamine, diglycidylaniline, and 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, poly Ethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, triglyceride Methylolpropane polyglycidyl ether, diglycidyl adipate, diglycidyl phthalate, triglycidyl-tri (2-hydroxyethyl) isocyanurate, resorcinol di Examples of the glycidyl ether and bisphenol-S-diglycidyl ether include epoxy resins having two or more epoxy groups in the molecule. The amount of the cross-linking agent used is not particularly limited, and may be appropriately selected depending on the degree of cross-linking. Specifically, the amount of the cross-linking agent used is, for example, preferably 7 parts by weight or less (for example, 0.05 parts by weight) based on 100 parts by weight of the polymer component (especially the polymer having a functional group at the end of the molecular chain). Parts ~ 7 parts by weight). When the usage-amount of a crosslinking agent is more than 7 weight part with respect to 100 weight part of polymer components, adhesive force will fall, and it is unpreferable. In addition, from the viewpoint of improving the cohesive force, the amount of the cross-linking agent used is preferably 0.05 parts by weight or more based on 100 parts by weight of the polymer component. In addition, in the present invention, a crosslinking treatment may be performed instead of using a crosslinking agent or by using an electron beam, ultraviolet rays, or the like while using a crosslinking agent. The film 40 for semiconductor back surface preferably contains a colorant. Thereby, the film 40 for semiconductor back surface can be colored, can exhibit excellent marking property and external appearance, and can be set as the semiconductor device which has the added value of external appearance. In this way, since the colored film for semiconductor back surface has excellent marking properties, by using various marking methods such as a printing method or a laser marking method, the semiconductor back film is separated from the semiconductor device or the semiconductor device using the semiconductor device. The surface on the circuit surface side is marked to give various information such as text information or graphic information. In particular, by controlling the color of the coloring, the information (text information, graphic information, etc.) provided by the mark can be visually recognized with excellent visibility. In addition, since the film for semiconductor back surface is colored, the dicing tape can be easily distinguished from the film for semiconductor back surface, and workability and the like can be improved. Furthermore, for example, as a semiconductor device, colors may be distinguished according to different products. When the film for semiconductor back surface is colored (when it is not colorless or transparent), the color represented by coloring is not particularly limited. For example, dark colors such as black, blue, and red are preferred. Especially preferred is black. In this embodiment, the so-called dark color basically means L * a * b * L specified in the color system * A darker color of 60 or less (0 to 60) [preferably 50 or less (0 to 50), and more preferably 40 or less (0 to 40)]. The so-called black basically means L * a * b * L specified in the color system * A black color of 35 or less (0 to 35) [preferably 30 or less (0 to 30), and more preferably 25 or less (0 to 25)]. Furthermore, in black, L * a * b * A in the color system * And b * Available separately according to L * The value is appropriately selected. As a * And b * For example, it is preferably both -10 to 10, more preferably -5 to 5, and even more preferably -3 to 3 (especially 0 or approximately 0). Furthermore, in this embodiment, L * a * b * L specified in the color system * , A * , B * It was calculated | required by measuring using the color-color-difference meter (brand name "CR-200", manufactured by Minolta Corporation; color-color-difference meter). Furthermore, L * a * b * The color system is a color space recommended by the International Commission on Illumination (CIE) in 1976. It is referred to as CIE1976 (L * a * b * ) Color space of the color system. Again, L * a * b * The color system is specified in Japanese Industrial Standard JIS Z 8729. When coloring the film 40 for semiconductor back surfaces, a coloring material (colorant) can be used according to a target color. As such a coloring material, various dark-colored coloring materials such as a black-based coloring material, a blue-based coloring material, and a red-based coloring material can be preferably used, and more preferably a black-based coloring material. The coloring material may be any of a pigment and a dye. The coloring material can be used alone or in combination of two or more. In addition, as the dye, a dye in any form such as an acid dye, a reactive dye, a direct dye, a disperse dye, and a cationic dye can be used. In addition, the form of the pigment is not particularly limited, and it can be appropriately selected from known pigments and used. The black-based coloring material is not particularly limited, and may be appropriately selected from, for example, inorganic black-based pigments and black-based dyes. In addition, as the black-based coloring material, a cyan-based coloring material (cyan-based coloring material), a magenta-based coloring material (magenta-based coloring material), and yellow-based coloring may be mixed. A coloring material mixture of materials (yellow coloring materials). The black coloring material can be used alone or in combination of two or more. Of course, a black-based coloring material may be used in combination with a coloring material other than black. Specifically, examples of the black-based coloring material include carbon black (furnace black, chimney black, acetylene black, thermal carbon black, lamp black, etc.), graphite, copper oxide, manganese dioxide, and azo-based materials. Pigments (azomethine azo black, etc.), aniline black, black black, titanium black, cyanine black, activated carbon, ferrite (non-magnetic ferrite, magnetic ferrite, etc.), magnetic Iron ore, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, complex oxide black pigment, anthraquinone organic black pigment, etc. In the present invention, as a black-based coloring material, CI solvent black 3, CI solvent black 7, CI solvent black 22, CI solvent black 27, CI solvent black 29, CI solvent black 34, CI solvent black 43, CI Solvent Black 70, CI Direct Black 17, CI Direct Black 19, CI Direct Black 22, CI Direct Black 32, CI Direct Black 38, CI Direct Black 51, CI Direct Black 71, CI Acid Black 1, CI Acid Black 2, CI Acid black 24, CI acid black 26, CI acid black 31, CI acid black 48, CI acid black 52, CI acid black 107, CI acid black 109, CI acid black 110, CI acid black 119, CI acid black 154, CI Black dyes such as disperse black 1, CI disperse black 3, CI disperse black 10, and CI disperse black 24; black pigments such as CI pigment black 1, CI pigment black 7, and the like. Examples of the coloring material other than the black coloring material include a cyan coloring material, a magenta coloring material, and a yellow coloring material. Examples of the cyan coloring material include CI solvent blue 25, CI solvent blue 36, CI solvent blue 60, CI solvent blue 70, CI solvent blue 93, CI solvent blue 95, CI acid blue 6, CI acid blue 45, and the like. Cyan dyes; CI Pigment Blue 1, CI Pigment Blue 2, CI Pigment Blue 3, CI Pigment Blue 15, CI Pigment Blue 15: 1, CI Pigment Blue 15: 2, CI Pigment Blue 15: 3, CI Pigment Blue 15: 4.CI Pigment Blue 15: 5, CI Pigment Blue 15: 6, CI Pigment Blue 16, CI Pigment Blue 17, CI Pigment Blue 17: 1, CI Pigment Blue 18, CI Pigment Blue 22, CI Pigment Blue 25, CI Pigment Cyan pigments such as Blue 56, CI Pigment Blue 60, CI Pigment Blue 63, CI Pigment Blue 65, CI Pigment Blue 66, CI Reduce Blue 4, CI Reduce Blue 60, CI Pigment Green 7. In the magenta-based coloring material, examples of the magenta-based dye include CI solvent red 1, CI solvent red 3, CI solvent red 8, CI solvent red 23, CI solvent red 24, CI solvent red 25, CI solvent red 27, CI solvent red 30, CI solvent red 49, CI solvent red 52, CI solvent red 58, CI solvent red 63, CI solvent red 81, CI solvent red 82, CI solvent red 83, CI solvent red 84, CI solvent red 100, CI solvent red 109, CI solvent red 111, CI solvent red 121, CI solvent red 122; CI disperse red 9; CI solvent violet 8, CI solvent violet 13, CI solvent violet 14, CI solvent violet 21, CI Solvent Violet 27; CI Disperse Violet 1; CI Basic Red 1, CI Basic Red 2, CI Basic Red 9, CI Basic Red 12, CI Basic Red 13, CI Basic Red 14, CI Basic Red 15, CI Basic Red 17, CI Basic Red 18, CI Basic Red 22, CI Basic Red 23, CI Basic Red 24, CI Basic Red 27, CI Basic Red 29, CI Basic Red 32, CI Basic Red 34, CI Basic Red 35, CI Basic Red 36, CI Basic Red 37, CI Basic Red 38, CI Basic Red 39, CI Basic Red 40; CI Basic Violet 1, CI Basic Violet Violet 3, CI Basic Violet 7, CI Basic Violet 10, CI Basic Violet 14, CI Basic Violet 15, CI Basic Violet 21, CI Basic Violet 25, C I basic violet 26, CI basic violet 27, CI basic violet 28 and the like. Among the magenta-based coloring materials, examples of the magenta-based pigment include CI Pigment Red 1, CI Pigment Red 2, CI Pigment Red 3, CI Pigment Red 4, CI Pigment Red 5, CI Pigment Red 6, and CI Pigment. Red 7, CI Pigment Red 8, CI Pigment Red 9, CI Pigment Red 10, CI Pigment Red 11, CI Pigment Red 12, CI Pigment Red 13, CI Pigment Red 14, CI Pigment Red 15, CI Pigment Red 16, CI Pigment Red 17, CI Pigment Red 18, CI Pigment Red 19, CI Pigment Red 21, CI Pigment Red 22, CI Pigment Red 23, CI Pigment Red 30, CI Pigment Red 31, CI Pigment Red 32, CI Pigment Red 37, CI Pigment Red 38, CI Pigment Red 39, CI Pigment Red 40, CI Pigment Red 41, CI Pigment Red 42, CI Pigment Red 48: 1, CI Pigment Red 48: 2, CI Pigment Red 48: 3, CI Pigment Red 48: 4 , CI Pigment Red 49, CI Pigment Red 49: 1, CI Pigment Red 50, CI Pigment Red 51, CI Pigment Red 52, CI Pigment Red 52: 2, CI Pigment Red 53: 1, CI Pigment Red 54, CI Pigment Red 55, CI Pigment Red 56, CI Pigment Red 57: 1, CI Pigment Red 58, CI Pigment Red 60, CI Pigment Red 60: 1, CI Pigment Red 63, CI Pigment Red 63: 1, CI Pigment Red 63: 2 CI Pigment Red 64, CI Pigment Red 641, CI Pigment Red 67, CI Pigment Red 68, CI Pigment Red 81, CI Pigment Red 83, CI Pigment Red 87, CI Pigment Red 88, CI Pigment Red 89, CI Pigment Red 90, CI Pigment Red 92, CI Pigment Red 101, CI Pigment Red 104, CI Pigment Red 105, CI Pigment Red 106, CI Pigment Red 108, CI Pigment Red 112, CI Pigment Red 114, CI Pigment Red 122, CI Pigment Red 123, CI Pigment Red 139, CI Pigment Red 144, CI Pigment Red 146, CI Pigment Red 147, CI Pigment Red 149, CI Pigment Red 150, CI Pigment Red 151, CI Pigment Red 163, CI Pigment Red 166, CI Pigment Red 168, CI Pigment Red 170, CI Pigment Red 171, CI Pigment Red 172, CI Pigment Red 175, CI Pigment Red 176, CI Pigment Red 177, CI Pigment Red 178, CI Pigment Red 179, CI Pigment Red 184, CI Pigment Red 185, CI Pigment Red 187, CI Pigment Red 190, CI Pigment Red 193, CI Pigment Red 202, CI Pigment Red 206, CI Pigment Red 207, CI Pigment Red 209, CI Pigment Red 219, CI Pigment Red 222, CI Pigment Red 224, CI Pigment Red 238, CI Pigment Red 245; CI Pigment Violet 3, CI Pigment Violet 9, CI Pigment Violet 19, CI Pigment violet 23, CI pigment violet 31, CI pigment violet 32, CI pigment violet 33, CI pigment violet 36, CI pigment violet 38, CI pigment violet 43, CI pigment violet 50; CI reduced red 1, CI reduced red 2, CI also Original red 10, CI reduction red 13, CI reduction red 15, CI reduction red 23, CI reduction red 29, CI reduction red 35, and the like. Examples of the yellow-based coloring material include CI solvent yellow 19, CI solvent yellow 44, CI solvent yellow 77, CI solvent yellow 79, CI solvent yellow 81, CI solvent yellow 82, CI solvent yellow 93, and CI solvent yellow. 98, CI Solvent Yellow 103, CI Solvent Yellow 104, CI Solvent Yellow 112, CI Solvent Yellow 162 and other yellow dyes; CI Pigment Orange 31, CI Pigment Orange 43, CI Pigment Yellow 1, CI Pigment Yellow 2, CI Pigment Yellow 3 , CI Pigment Yellow 4, CI Pigment Yellow 5, CI Pigment Yellow 6, CI Pigment Yellow 7, CI Pigment Yellow 10, CI Pigment Yellow 11, CI Pigment Yellow 12, CI Pigment Yellow 13, CI Pigment Yellow 14, CI Pigment Yellow 15 , CI pigment yellow 16, CI pigment yellow 17, CI pigment yellow 23, CI pigment yellow 24, CI pigment yellow 34, CI pigment yellow 35, CI pigment yellow 37, CI pigment yellow 42, CI pigment yellow 53, CI pigment yellow 55 , CI Pigment Yellow 65, CI Pigment Yellow 73, CI Pigment Yellow 74, CI Pigment Yellow 75, CI Pigment Yellow 81, CI Pigment Yellow 83, CI Pigment Yellow 93, CI Pigment Yellow 94, CI Pigment Yellow 95, CI Pigment Yellow 97 , CI Pigment Yellow 98, CI Pigment Yellow 100, CI Pigment Yellow 101, CI Pigment Yellow 104, CI Pigment Yellow 108, CI Pigment Yellow 109, CI Pigment Yellow 110, CI Pigment Yellow 113, CI Pigment Yellow 114, CI Pigment Yellow 116 CI Pigment 117, CI Pigment Yellow 120, CI Pigment Yellow 128, CI Pigment Yellow 129, CI Pigment Yellow 133, CI Pigment Yellow 138, CI Pigment Yellow 139, CI Pigment Yellow 147, CI Pigment Yellow 150, CI Pigment Yellow 151, CI Pigment Yellow 153, CI pigment yellow 154, CI pigment yellow 155, CI pigment yellow 156, CI pigment yellow 167, CI pigment yellow 172, CI pigment yellow 173, CI pigment yellow 180, CI pigment yellow 185, CI pigment yellow 195, CI reduction yellow 1. Yellow pigments such as CI reduction yellow 3 and CI reduction yellow 20. Various coloring materials, such as a cyan coloring material, a magenta coloring material, and a yellow coloring material, can be used individually or in combination of 2 or more types. When two or more kinds of coloring materials such as cyan-based coloring materials, magenta-based coloring materials, and yellow-based coloring materials are used, there is no particular limitation on the mixing ratio (or blending ratio) of these coloring materials. It can be appropriately selected according to the type of each coloring material, the target color, and the like. If necessary, other additives may be blended into the film 40 for semiconductor back surface. Examples of the other additives include a filler (filler), a flame retardant, a silane coupling agent, and an ion trapping agent. Examples of the additive include extenders, anti-aging agents, antioxidants, and surfactants. The filler may be any of an inorganic filler and an organic filler, and an inorganic filler is preferred. By blending a filler such as an inorganic filler, it is possible to provide the film 40 for semiconductor back surface, improve the thermal conductivity, adjust the elastic modulus, and the like. The film 40 for semiconductor back surface may be conductive or non-conductive. Examples of the inorganic filler include ceramics including silicon dioxide, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, Various inorganic powders such as metals such as chromium, lead, tin, zinc, palladium, solder, and carbon. The filler can be used alone or in combination of two or more. Among the fillers, silicon dioxide, particularly fused silicon dioxide, is preferred. The average particle diameter of the inorganic filler is preferably in the range of 0.1 μm to 80 μm. The average particle diameter of the inorganic filler can be measured, for example, by a laser diffraction type particle size distribution measuring device. The blending amount of the filler (especially an inorganic filler) is preferably 80 parts by weight or less (0 to 80 parts by weight) with respect to 100 parts by weight of the organic resin component, and particularly preferably 0 to 70 parts by weight. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. The flame retardant can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropyl Methyldiethoxysilane and the like. Silane coupling agents can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. The ion trapping agents can be used alone or in combination of two or more. The film 40 for semiconductor back surface can be formed by a conventional method, for example, by mixing a thermosetting resin such as an epoxy resin, a thermoplastic resin such as an acrylic resin if necessary, and a solvent or other additives as necessary to prepare a resin composition. And formed into a film-like layer. The film 40 for semiconductor back surface is preferably 1 GPa or more in the entire range of 23 ° C to 80 ° C in the tensile storage elastic modulus. When the tensile storage elastic modulus is 1 GPa or more, it is possible to reduce cracks generated on the side of the wafer during dicing. The tensile storage elastic modulus is preferably 2 GPa or more. The tensile storage elastic modulus of the cured film 40 for semiconductor back surface can be adjusted by the content of the acrylic resin, the content of the thermosetting resin, and the like. The film 40 for semiconductor back surface can be hardened by heating at 120 ° C for 2 hours. The tensile storage elastic modulus of the cured film 40 for semiconductor back surface was measured by the method described in the examples. The tensile storage elastic modulus at 23 ° C. of the cured film 40 for a semiconductor back surface is preferably 2 GPa or more, and more preferably 2.5 GPa or more. The upper limit of the tensile storage elastic modulus at 23 ° C. of the cured film 40 for semiconductor back surface is, for example, 50 GPa, 10 GPa, 7 GPa, 5 GPa. On the other hand, the upper limit of the tensile storage elastic modulus of the cured film 40 for semiconductor back surface at 80 ° C. is, for example, 50 GPa, 10 GPa, 7 GPa, 5 GPa. Ratio of the tensile storage elastic modulus at 80 ° C of the cured semiconductor film 40 to the tensile storage elastic modulus at 23 ° C of the cured semiconductor film 40 (tensile storage at 80 ° C) The elastic modulus / tensile storage elastic modulus at 23 ° C) is preferably 0.3 or more, and more preferably 0.4 or more. If the ratio of the tensile storage elastic modulus is less than 0.3, the elastic modulus with respect to temperature changes greatly, so cracks on the side of the wafer are liable to occur. The ratio of the tensile storage elastic modulus (tensile storage elastic modulus at 80 ° C / tensile storage elastic modulus at 23 ° C) is preferably 1.0 or less, more preferably 0.9 or less, and still more preferably 0.8 or less. The film 40 for semiconductor back surface preferably has 1.7 kgf / mm 2 The above is relative to the shear adhesion at 25 ° C of a silicon wafer. If the shear adhesive force at 25 ℃ is 1.7 kgf / mm 2 As described above, it is possible to reduce cracks generated on the side of the wafer during dicing. It is estimated that the vibration of the semiconductor wafer during dicing can be suppressed. The lower limit of the shear adhesive force at 25 ° C is, for example, 1.8 kgf / mm 2 . The upper limit of the shear adhesive force at 25 ° C is, for example, 4 kgf / mm 2 , 3.5 kgf / mm 2 , 3 kgf / mm 2 Wait. The shear adhesion force at 25 ° C can be adjusted by the ratio of the thermoplastic resin to the thermosetting resin and the like. The shear adhesion force at 25 ° C can be measured at 70 ° C by fixing the film 40 for semiconductor back surface to a silicon wafer, heating at 120 ° C for 2 hours, and then measuring at a shear rate of 500 µm / sec and 25 ° C. The film 40 for semiconductor back surface preferably has 0.5 kgf / mm 2 The above is relative to the shear adhesion at 100 ° C of a silicon wafer. If the shear adhesive force at 100 ℃ is 0.5 kgf / mm 2 As described above, there is a tendency that wafer spatter during dicing or peeling of the film 40 for semiconductor back surface during reflow does not easily occur, and the reliability is excellent. The shear adhesive force at 100 ° C is preferably 1.0 kgf / mm 2 Above, more preferably 2.0 kgf / mm 2 the above. The film 40 for semiconductor back surface is preferably protected by a separator (release liner) (not shown). The separator has a function as a protective material for protecting the film for semiconductor back surface before it is actually used. The spacer is peeled off when the semiconductor wafer is bonded to the film for semiconductor back surface. As the separator, polyethylene, polypropylene, or a surface-coated plastic film (such as polyethylene terephthalate) using a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent can be used. Or paper. Furthermore, the spacer can be formed by a method known in the prior art. The thickness and the like of the spacer are not particularly limited. The thickness of the film 40 for semiconductor back surface is not particularly limited, and may be appropriately selected from a range of about 2 μm to 200 μm, for example. Furthermore, the thickness is preferably about 4 μm to 160 μm, more preferably about 6 μm to 100 μm, and even more preferably about 10 μm to 80 μm. (Cutting Tape) The dicing tape 2 is formed by forming an adhesive layer 22 on a substrate 21. As described above, the dicing tape 2 only needs to have a structure in which the base material 21 and the adhesive layer 22 are laminated. The cutting tape 2 can be divided into: (1) a case where the tensile elastic modulus at 23 ° C after the ultraviolet irradiation of the adhesive layer 22 is 1 MPa to 200 MPa; (2) a tensile at 23 ° C of the adhesive layer 22 When the tensile modulus is 1 MPa to 200 MPa. Hereinafter, the case of (1) will be described first. The tensile elastic modulus of the adhesive layer 22 at 23 ° C. after ultraviolet irradiation is 1 MPa to 200 MPa, preferably 1 MPa to 100 MPa, and more preferably 10 MPa to 50 MPa. The tensile elastic modulus at 23 ° C after UV irradiation is 1 MPa or more, and it has a certain degree of hardness after UV irradiation. Therefore, if blade cutting is performed after the adhesive layer 22 is irradiated with ultraviolet rays, it is possible to reduce cracks generated on the side surface of the wafer. In addition, since the tensile elastic modulus at 23 ° C. after the ultraviolet irradiation is 200 MPa or less, it is possible to suppress the occurrence of die fly during dicing. The amount of ultraviolet irradiation is based on the description in the examples. The tensile elastic modulus at 23 ° C after the ultraviolet irradiation of at least the wafer attachment portion 23 of the adhesive layer 22 is preferably 1 MPa to 200 MPa, more preferably 1 MPa to 100 MPa, and even more preferably 10 MPa ～ 50 MPa. That is, in a case where the adhesive layer 22 is composed of only the wafer attaching portion 23, the tensile elastic modulus of the adhesive layer 22 at 23 ° C. after the ultraviolet irradiation is preferably 1 MPa to 200 MPa. In the case where the adhesive layer 22 is composed of the wafer attachment portion 23 and other portions, at least the tensile elastic mold at 23 ° C. after the ultraviolet irradiation of the wafer attachment portion 23 of the adhesive layer 22 is required. The number may be 1 MPa to 200 MPa, and the other parts are not particularly limited. If at least the tensile modulus of elasticity at 23 ° C. of the wafer attachment portion 23 of the adhesive layer 22 is 1 MPa to 200 MPa, it is possible to further reduce cracks generated on the side of the wafer when the blade is cut. The tensile elastic modulus of the adhesive layer 22 after ultraviolet irradiation can be adjusted, for example, by the content of the following crosslinking agents, photopolymerization initiators, and ultraviolet-reactive crosslinking agents. The peel force at 23 ° C between the flip-chip-type semiconductor backside film 40 and the adhesive layer 22 after the adhesive layer 22 is irradiated with ultraviolet rays is preferably 0.01 N / 20 mm or more and 0.2 N / 20 mm or less, more preferably It is 0.03 N / 20 mm or more and 0.15 N / 20 mm or less, and more preferably 0.05 N / 20 mm or more and 0.10 N / 20 mm or less. After the adhesive layer 22 is irradiated with ultraviolet rays, the peeling force between the film 40 for a flip-chip type semiconductor back surface and the adhesive layer 22 at 23 ° C. is greater than or equal to 0.01 N / 20 mm and less than or equal to 0.2 N / 20 mm. Reduces cracks on the side of the wafer during blade cutting. In addition, the diced wafer can be picked up better. The substrate 21 can be used as a support matrix for an adhesive layer or the like. The base material 21 is preferably ultraviolet permeable. As the substrate 21, for example, paper-based substrates such as paper; fiber-based substrates such as cloth, non-woven fabric, felt, and mesh; metal-based substrates such as metal foil and metal plate; plastic such as plastic films or sheets Substrates; rubber substrates such as rubber sheets; foams such as foamed sheets; or laminates of these [especially laminates of plastic substrates and other substrates, or plastic films (or sheets) of each other Laminates, etc.] and other appropriate thin-layer bodies. In the present invention, as the substrate, a plastic-based substrate such as a plastic film or sheet can be preferably used. Examples of such plastic materials include olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymers; ethylene-vinyl acetate copolymers (EVA), ionic polymer resins, Ethylene- (meth) acrylic acid copolymers, ethylene- (meth) acrylic acid (random, alternating) copolymers and other copolymers with ethylene as the monomer component; polyethylene terephthalate (PET), poly (ethylene) Polyesters such as ethylene naphthalate (PEN), polybutylene terephthalate (PBT); acrylic resins; polyvinyl chloride (PVC); polyurethanes; polycarbonates; polyphenylene sulfide Ether (PPS); polyamide resins such as polyamide (nylon) and fully aromatic polyamide (aramid); polyetheretherketone (PEEK); polyimide; polyetherimide; Polyvinylidene chloride; ABS (acrylonitrile-butadiene-styrene copolymer); cellulose resin; silicone resin; fluororesin, etc. Examples of the material of the substrate 21 include polymers such as a crosslinked body of the above resin. The above-mentioned plastic film can be used without being stretched, and it is also possible to use a uniaxially or biaxially stretched treatment as required. According to the resin sheet provided with heat shrinkability by extension processing or the like, it is possible to reduce the bonding area between the adhesive layer 22 and the film 40 for semiconductor back surface by thermally shrinking the substrate 21 after dicing, thereby achieving easy recovery of the semiconductor wafer. Into. The surface of the substrate 21 may be subjected to conventional surface treatments, such as chemical or physical treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, ionizing radiation treatment, and the use of primers (such as the following adhesive substances) Coating treatment to improve adhesion and retention with adjacent layers. The substrate 21 can be appropriately selected from the same type or different types, and several types of blends can be used as necessary. For the base material 21, a vapor-deposited layer containing a conductive material having a thickness of about 30 to 500 Å may be provided on the base material 21 in order to provide antistatic ability. The substrate 21 may be a single layer or a multilayer of two or more types. The thickness of the substrate 21 (the total thickness in the case of a laminated body) is not particularly limited, and can be appropriately selected according to strength, flexibility, purpose of use, etc., for example, generally 1000 μm or less (for example, 1 μm to 1000 μm ), Preferably from 10 μm to 500 μm, further preferably from 20 μm to 300 μm, and particularly from about 30 μm to 200 μm, but is not limited to these. In addition, the substrate 21 may contain various additives (colorants, fillers, plasticizers, anti-aging agents, antioxidants, surfactants, flame retardants, etc.) within a range that does not impair the effects of the present invention. ). The adhesive layer 22 is formed of an adhesive and has adhesiveness. The adhesive layer 22 is not particularly limited as long as the tensile modulus of elasticity at 23 ° C. after ultraviolet irradiation is 1 MPa to 200 MPa, and may be appropriately selected from known adhesives. Specifically, as the adhesive, for example, an adhesive having the above characteristics can be appropriately selected and used from the following: an acrylic adhesive, a rubber adhesive, a vinyl alkyl ether adhesive, and a silicone adhesive. , Polyester-based adhesives, polyamide-based adhesives, urethane-based adhesives, fluorine-based adhesives, styrene-diene block copolymer-based adhesives, and the melting point of these adhesives is about Well-known adhesives such as creep-improved adhesives made of hot-melt resins below 200 ° C (for example, refer to Japanese Patent Laid-Open No. 56-61468, Japanese Patent Laid-Open No. 61-174857, and Japanese Patent (Japanese Patent Laid-Open No. 63-17981, Japanese Patent Laid-Open No. 56-13040, etc.). Among these, it is preferable to use an ultraviolet curable adhesive. The adhesive can be used alone or in combination of two or more. As the adhesive, an acrylic adhesive and a rubber adhesive can be preferably used, and an acrylic adhesive is particularly preferred. Examples of the acrylic pressure-sensitive adhesive include acrylic pressure-sensitive adhesives containing an acrylic polymer (homopolymer or copolymer) using one or two or more (meth) acrylic acid alkyl esters as monomer components. . Examples of the alkyl (meth) acrylate in the acrylic adhesive include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, and (meth) acrylic acid. Isopropyl ester, butyl (meth) acrylate, isobutyl (meth) acrylate, second butyl (meth) acrylate, third butyl (meth) acrylate, amyl (meth) acrylate, ( Hexyl (meth) acrylate, heptyl (meth) acrylate, octyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate Ester, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate, Tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, cetyl (meth) acrylate, decyl (meth) acrylate Alkyl (meth) acrylates, such as heptadecyl ester, octadecyl (meth) acrylate, undecyl (meth) acrylate, and eicosyl (meth) acrylate, and the like. The alkyl (meth) acrylate is preferably an alkyl (meth) acrylate having 4 to 18 carbon atoms in the alkyl group. The alkyl group of the (meth) acrylic acid alkyl ester may be either linear or branched. In addition, the acrylic polymer may contain other monomer components (copolymerizable monomers) which can be copolymerized with the alkyl (meth) acrylate, as needed, for the purpose of improving cohesion, heat resistance, and crosslinkability. Component). Examples of such copolymerizable monomer components include (meth) acrylic acid (acrylic acid, methacrylic acid), carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. And other carboxyl group-containing monomers; maleic anhydride, itaconic anhydride and other acid group-containing monomers; hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, (methyl) ) Hydroxyhexyl acrylate, hydroxyoctyl (meth) acrylate, hydroxydecyl (meth) acrylate, hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate, etc. Hydroxyl-containing monomer; styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, (meth) acrylic acid Sulfonyl group-containing monomers such as sulfopropyl ester, (meth) acryloxynaphthalenesulfonic acid; Phosphate group-containing monomers such as 2-hydroxyethylacrylfluorenyl phosphate; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth) acrylamine (N-Substituted) Amines Body; aminomethacrylate (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, tertiary butylaminoethyl (meth) acrylate, etc. Ester monomers; alkoxyalkyl (meth) acrylate monomers such as methoxyethyl (meth) acrylate and ethoxyethyl (meth) acrylate; acrylonitrile, methacrylonitrile Isocyanoacrylate monomers; epoxy-containing acrylic monomers such as glycidyl (meth) acrylate; styrene monomers such as styrene and α-methylstyrene; vinyl acetate and vinyl propionate And other vinyl ester monomers; olefin monomers such as isoprene, butadiene, isobutylene; vinyl ether monomers such as vinyl ether; N-vinyl pyrrolidone, methyl vinyl pyrrolidone, vinyl Pyridine, vinyl piperidone, vinyl pyrimidine, vinyl piperidine, vinyl pyridine, vinyl pyrrole, vinyl imidazole, vinyl oxazole, vinyl morpholine, N-vinyl carboxylic acid amines, N-ethylene Nitrogen-containing monomers such as caprolactam; N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide, N-phenylmaleimide Maleimide monomers such as amines; N-methyl Ikonimide, N-ethyl Ikonimide, N-butyl Ikonimide, N-octyl Ikonimide , N-2-ethylhexyl Ikonimide, N-cyclohexyl Ikonimide, N-Lauryl Ikonimide and other Ikonimide monomers; N- (meth) propylene Ethoxymethylene succinimide, N- (meth) acrylfluorenyl-6-oxyhexamethylene succinimide, N- (meth) acrylfluorenyl-8-oxyoctaimine Succinimide monomers such as methyl succinimide; polyethylene glycol (meth) acrylate, polypropylene glycol (meth) acrylate, methoxyethylene glycol (meth) acrylate, methoxy Glycol-based acrylate monomers such as polypropylene glycol (meth) acrylate; tetrahydrofurfuryl (meth) acrylate, fluorine (meth) acrylate, polysiloxane (meth) acrylate, etc. Acrylate monomers such as halogen atoms and silicon atoms; hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, Neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trihydroxy Methylpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, acrylic urethane, divinylbenzene , Polyfunctional monomers such as butyl di (meta) acrylate, hexyl di (meta) acrylate, and the like. These copolymerizable monomer components can be used alone or in combination of two or more. Among the above-mentioned adhesives, a crosslinking agent (external crosslinking agent) is preferably used to adjust the elastic modulus. The crosslinking agent is not particularly limited, and known crosslinking agents can be used. Specific examples of the crosslinking agent include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, melamine-based crosslinking agents, and peroxide-based crosslinking agents. In addition, urea-based crosslinking agents and metals Alkoxide-based crosslinker, metal chelate-based crosslinker, metal salt-based crosslinker, carbodiimide-based crosslinker, oxazoline-based crosslinker, aziridine-based crosslinker, The amine-based crosslinking agent and the like are preferably an isocyanate-based crosslinking agent or an epoxy-based crosslinking agent. The crosslinking agent may be used alone or in combination of two or more kinds. In addition, the amount of the crosslinking agent used is not particularly limited. When using a crosslinking agent, it is preferable to mix | blend 0.1-20 weight part with respect to 100 weight part of base polymers (solid content component except a solvent). Examples of the isocyanate-based crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate. Cyclopentyl diisocyanate, cyclohexyl diisocyanate, isophorone diisocyanate, hydrogenated toluene diisocyanate, hydrogenated xylene diisocyanate and other alicyclic polyisocyanates; 2,4-toluene diisocyanate, 2,6- Aromatic polyisocyanates such as toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, xylylene diisocyanate, etc. In addition, trimethylolpropane / toluene diisocyanate trimer adduct [ Manufactured by Nippon Polyurethane Industry Co., Ltd. under the trade name "CORONATE L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [Made by Nippon Polyurethane Industry Co., Ltd. under the trade name "CORONATE HL"] Wait. Examples of the epoxy-based crosslinking agent include N, N, N ', N'-tetraglycidyl metaxylylenediamine, diglycidylaniline, and 1,3-bis (N, N -Glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene Glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trihydroxy Methylpropane polyglycidyl ether, diglycidyl adipate, diglycidyl phthalate, triglycidyl-tri (2-hydroxyethyl) isocyanurate, resorcinol diglycidyl Glyceryl ether, bisphenol-S-diglycidyl ether, and epoxy-based resins having two or more epoxy groups in the molecule are also mentioned. When a UV-curable adhesive is used as the adhesive, examples of the UV-curable adhesive (composition) include a radically reactive carbon in a polymer side chain, a main chain, or a main chain terminal. -The polymer of carbon double bond is used as a UV-curing adhesive inherent in the base polymer. As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, an acrylic polymer is preferably used as a basic skeleton. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above. The introduction method of the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be used. When the carbon-carbon double bond is introduced into the polymer side chain, the molecular design is easy. For example, the following method can be mentioned: an acrylic polymer is copolymerized with a monomer having a functional group in advance, and then a compound having a functional group and a carbon-carbon double bond capable of reacting with the functional group is used to maintain the carbon-carbon double bond. Condensation or addition reaction proceeds in a state of radiation hardening. The adhesive preferably contains an ultraviolet-reactive crosslinking agent (ultraviolet-polymerizable monomer component or oligomer component). When an ultraviolet-reactive crosslinking agent is contained, the elastic modulus after ultraviolet irradiation can be improved. Examples of the ultraviolet-reactive crosslinking agent include (meth) acrylic acid urethane, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, and pentaerythritol. Tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (methyl) ) Acrylate, etc. Examples thereof include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based, and those having a molecular weight in the range of about 100 to 30,000 are suitable. By containing an ultraviolet-reactive crosslinking agent, the elastic modulus can be greatly improved by ultraviolet irradiation. The blending amount of the ultraviolet-reactive crosslinking agent is preferably 1 to 50 parts by weight based on 100 parts by weight of the base polymer. It is preferable that the said adhesive contains a photoinitiator. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) one, α-hydroxy-α, α'-dimethylacetophenone Α-keto alcohol compounds such as 1,2-methyl-2-hydroxyphenylacetone, 1-hydroxycyclohexylphenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone Acetophenone compounds such as ketones, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2-olinylpropane-1-one; Benzoin ether compounds such as benzoin diethyl ether, benzoin isopropyl ether, fennel dimethyl ether; ketal compounds such as benzoin dimethyl ketal; aromatic sulfonyl chloride compounds such as 2-naphthalenesulfonyl chloride; 1 -Benzophenone-1,2-propanedione-2- (O-ethoxycarbonyl) oxime and other photoactive oxime compounds; benzophenone, benzamidinebenzoic acid, 3,3'-dimethyl- Benzophenone compounds such as 4-methoxybenzophenone; 9-oxosulfur , 2-chloro-9-oxysulfur 2-methyl-9-oxysulfur 2,4-dimethyl-9-oxysulfur Isopropyl-9-oxysulfur , 2,4-dichloro-9-oxysulfur , 2,4-diethyl-9-oxysulfur 2,4-diisopropyl-9-oxysulfur 9-oxysulfur Compounds; camphorquinone; halogenated ketones; fluorenyl phosphine oxide; fluorenyl phosphonate and the like. The blending amount of the photopolymerization initiator is, for example, about 0.05 to 10 parts by weight based on 100 parts by weight of the base polymer constituting the adhesive. The adhesive layer 22 can be formed by, for example, a conventional method: mixing an adhesive (pressure-sensitive adhesive) with a solvent or other additives as needed to form a sheet-like layer. Specifically, for example, the adhesive layer 22 can be formed by the following methods: a method of applying a mixture containing an adhesive and an optional solvent or other additives on the substrate 21; a suitable separator (release paper) Etc.) A method in which the above mixture is applied to form an adhesive layer 22 and transferred (transferred) to the substrate 21. The thickness of the adhesive layer 22 is not particularly limited, and is, for example, about 5 μm to 300 μm (preferably 5 μm to 200 μm, more preferably 5 μm to 100 μm, and particularly preferably 7 μm to 50 μm). When the thickness of the adhesive layer 22 is within the above range, a moderate adhesive force can be exhibited. In addition, the adhesive layer 22 may be any of a single layer and a multi-layer. The dicing tape-integrated semiconductor backside film 1 may be formed in the form of a roll, or may be formed in the form of a laminated sheet (film). For example, in the case of being rolled into a roll shape, the laminated body of the film for the backside of the flip-chip semiconductor and the dicing tape can be rolled into a roll shape under the condition of being protected by a separator as needed, and then rolled into a roll. The state or form of the dicing tape-integrated semiconductor back film. Furthermore, as a roll-shaped state or form of the dicing tape-integrated semiconductor back film 1, the substrate 21, an adhesive layer 22 formed on one surface of the substrate 21, and a semiconductor formed on the adhesive layer 22 can be used. The back surface film 40 and a release treatment layer (back surface treatment layer) formed on the other surface of the base material 21 are configured. The thickness of the dicing tape-integrated semiconductor back film 1 (the total thickness of the thickness of the semiconductor back film and the thickness of the dicing tape including the substrate 21 and the adhesive layer 22) can be, for example, from 7 μm to 11300 μm. The selection range is preferably 17 μm to 1600 μm (and further preferably 28 μm to 1200 μm). The case (1) above, that is, the cutting tape 2 in the case where the tensile elastic modulus at 23 ° C. after the ultraviolet irradiation of the adhesive layer 22 is 1 MPa to 200 MPa has been described. Next, the case (2) above, that is, the cutting tape 2 in a case where the tensile elastic modulus at 23 ° C. of the adhesive layer 22 is 1 MPa to 200 MPa will be described. In the case of (2), the tensile elastic modulus of the adhesive layer 22 at 23 ° C is 1 MPa to 200 MPa, preferably 1 MPa to 100 MPa, and more preferably 10 MPa to 50 MPa. The tensile elastic modulus of the adhesive layer 22 at 23 ° C. is 1 MPa or more, and it has a certain degree of hardness. Therefore, it is possible to reduce cracks generated on the side of the wafer when the blade is diced. In addition, since the tensile elastic modulus at 23 ° C is 200 MPa or less, it is possible to suppress wafer scattering during dicing. The tensile elastic modulus at 23 ° C of at least the wafer attachment portion 23 of the adhesive layer 22 is preferably 1 MPa to 200 MPa, more preferably 1 MPa to 100 MPa, and even more preferably 10 MPa to 50 MPa. . That is, in a case where the adhesive layer 22 is composed of only the wafer attaching portion 23, the tensile elastic modulus of the adhesive layer 22 at 23 ° C. is preferably 1 MPa to 200 MPa. In the case where the adhesive layer 22 is composed of the wafer attaching portion 23 and other portions, at least the tensile elastic modulus at 23 ° C. of the wafer attaching portion 23 of the adhesive layer 22 is 1 MPa. It is only required to be 200 MPa, and the other parts are not particularly limited. If at least the tensile modulus of elasticity at 23 ° C. of the wafer attachment portion 23 of the adhesive layer 22 is 1 MPa to 200 MPa, it is possible to further reduce cracks generated on the side of the wafer when the blade is cut. The tensile elastic modulus of the adhesive layer 22 can be adjusted by, for example, the content of the crosslinking agent. The peel force at 23 ° C between the flip-chip semiconductor backside film 40 and the adhesive layer 22 is preferably 0.01 N / 20 mm or more and 0.2 N / 20 mm or less, more preferably 0.03 N / 20 mm or more and 0.15 N / 20 mm or less, more preferably 0.05 N / 20 mm or more and 0.10 N / 20 mm or less. If the peeling force between the film 40 for the flip-chip semiconductor back surface and the adhesive layer 22 at 23 ° C is 0.01 N / 20 mm or more and 0.2 N / 20 mm or less, it is possible to further reduce Cracked. In the case of the above (2), the composition of the adhesive layer 22 may be the same as that of the above (1), as long as the tensile elastic modulus at 23 ° C of the adhesive layer 22 is 1 MPa to 200 MPa. Detailed description is omitted. For example, the adhesive layer 22 may be composed of an adhesive that does not use ultraviolet curing, without using an ultraviolet curing adhesive. The case (2) above, that is, the cutting tape 2 in the case where the tensile elastic modulus at 23 ° C. of the adhesive layer 22 is 1 MPa to 200 MPa has been described. (Manufacturing method of dicing tape-integrated semiconductor back surface film) The manufacturing method of the dicing tape-integrated semiconductor back film of this embodiment will be described by taking the dicing tape-integrated semiconductor back film 1 shown in FIG. 1 as an example. First, the substrate 21 can be formed into a film by a conventionally known film forming method. Examples of the film forming method include a rolling film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a coextrusion method, Dry lamination method. Then, the adhesive composition is coated on the substrate 21 and dried (heat-crosslinked as necessary) to form an adhesive layer 22. Examples of the coating method include roll coating, screen coating, and gravure coating. Furthermore, the adhesive layer composition may be directly applied to the substrate 21 to form the adhesive layer 22 on the substrate 21, or may be formed by applying the adhesive composition to a release paper whose surface is subjected to a release treatment or the like. The adhesive layer 22 is then transferred to the substrate 21. Thereby, the dicing tape 2 in which the adhesive layer 22 was formed on the base material 21 was produced. On the other hand, the material for forming the film 40 for semiconductor back surface is coated on a release paper so that the thickness after drying becomes a specific thickness, and then dried under specific conditions (in the case of thermal curing, etc., if necessary A heating process is performed and drying is performed), and a coating layer is formed. By transferring the coating layer to the adhesive layer 22, a film 40 for semiconductor back surface is formed on the adhesive layer 22. In addition, the coating material used to form the film 40 for semiconductor back surface can be directly coated on the adhesive layer 22 and then dried under specific conditions (when heat curing is required, etc., heat treatment can be performed as needed). (Dried), and a film 40 for semiconductor back surface is formed on the adhesive layer 22. By the above method, the dicing tape-integrated semiconductor back surface film 1 of the present invention can be obtained. In the case where thermal curing is performed when the film 40 for semiconductor back surface is formed, it is important to perform thermal curing to such an extent that it is partially cured, but it is preferable not to perform thermal curing. The dicing tape-integrated semiconductor backside film 1 can be preferably used when manufacturing a semiconductor device having a flip-chip bonding step. That is, the dicing tape-integrated semiconductor backside film 1 of the present invention is used when manufacturing a flip-chip-mounted semiconductor device, and the semiconductor backside film 40 having the dicing tape-integrated semiconductor backside film 1 on the backside of the semiconductor wafer is bonded. Or in the form of a flip-chip mounted semiconductor device. Therefore, the dicing tape-integrated semiconductor backside film 1 of the present invention can be used in a semiconductor device for flip chip mounting (a semiconductor device in which the semiconductor wafer is fixed to a substrate such as a substrate by a flip chip bonding method). (Semiconductor wafer) As a semiconductor wafer, there is no particular limitation as long as it is a known or customary semiconductor wafer, and it can be appropriately selected and used from semiconductor wafers of various materials. In the present invention, as the semiconductor wafer, a silicon wafer can be preferably used. (Method for Manufacturing Semiconductor Device) [First Embodiment] A method for manufacturing a semiconductor device according to the first embodiment will be described below with reference to FIGS. 2 to 7. 2 to 7 are schematic cross-sectional views for explaining a method for manufacturing a semiconductor device according to the first embodiment. The method for manufacturing a semiconductor device according to the first embodiment is the case where the method for manufacturing a semiconductor device according to the third aspect of the present invention includes step A and then step B. The method for manufacturing a semiconductor device according to the first embodiment has at least the following steps: Step A, bonding a semiconductor wafer to the above-mentioned film-on-type semiconductor back-side film of the dicing tape-integrated semiconductor back side film; step B, at the above-mentioned step After A, the adhesive layer is irradiated with ultraviolet rays so that the tensile modulus of elasticity at 23 ° C of the adhesive layer becomes 1 MPa to 200 MPa; Step C, after Step A and Step B described above, The semiconductor wafer is diced to form a semiconductor element; and step D, the semiconductor element and the film for the flip-chip semiconductor back surface are peeled off from the adhesive layer together. The first embodiment will be described in detail below. In the first embodiment, the dicing tape-integrated semiconductor backside film 1 in the case (1) is used. That is, the tensile elastic modulus of the adhesive layer 22 of the first embodiment at 23 ° C. after the ultraviolet irradiation is 1 MPa to 200 MPa. The tensile elastic modulus of the adhesive layer 22 at 23 ° C. before ultraviolet irradiation may be in a range of 1 MPa to 200 MPa, or may be outside the above range. However, the tensile elastic modulus at 23 ° C. before ultraviolet irradiation is preferably less than 1 MPa. The reason is that the wafer can be fixed more securely. [Installation Procedure] First, as shown in FIG. 2, the spacer arbitrarily provided on the semiconductor back film 40 of the dicing tape-integrated semiconductor back film 1 is appropriately peeled off, and a semiconductor is bonded to the semiconductor back film 40. The wafer 4 is then held and fixed (step A). At this time, the film 40 for semiconductor back surface is in an unhardened state (including a semi-hardened state). The dicing tape-integrated semiconductor back surface film 1 is bonded to the back surface of the semiconductor wafer 4. The back surface of the semiconductor wafer 4 refers to a surface opposite to the circuit surface (also referred to as a non-circuit surface, a non-electrode formation surface, etc.). The bonding method is not particularly limited, and a method using compression bonding is preferred. The crimping is usually performed while pressing with a pressing mechanism such as a crimping roller. [Heating Step] Then, as necessary, baking (heating) is performed to firmly fix the semiconductor back surface film 40 to the semiconductor wafer 4. Thereby, the film 40 for semiconductor back surfaces is hardened. This baking is performed, for example, under the conditions of 80 to 150 ° C and 0.1 to 24 hours. [Laser Marking Step] Next, as shown in FIG. 3, as shown in FIG. 3, the semiconductor back film 40 is laser-marked using a laser 36 for laser marking from the dicing tape 2 side. The conditions for the laser marking are not particularly limited, and it is preferable that the film 40 for semiconductor back surface is irradiated with laser [wavelength: 532 nm] under conditions of intensity: 0.3 W to 2.0 W. The irradiation is preferably performed so that the processing depth (depth) at this time becomes 2 μm or more. The upper limit of the processing depth is not particularly limited. For example, it can be selected from a range of 2 μm to 25 μm, preferably 3 μm or more (3 μm to 20 μm), and more preferably 5 μm or more (5 μm to 15 μm). By setting the conditions of the laser marking within the above numerical range, excellent laser marking properties can be exhibited. The laser processability of the film 40 for semiconductor back surface can be performed by the type or content of the resin component, the type or content of the colorant, the type or content of the crosslinking agent, the type or content of the filler, and the like. control. [Ultraviolet irradiation step] Subsequently, as shown in FIG. 4, the adhesive layer 22 is irradiated with ultraviolet rays 38 (step B). The ultraviolet irradiation is performed so that the tensile elastic modulus at 23 ° C. of the adhesive layer after the ultraviolet irradiation becomes 1 MPa to 200 MPa. The specific amount of ultraviolet radiation is preferably, for example, 200 to 600 mJ / cm 2 Within range. In addition, the irradiation direction of ultraviolet rays is not particularly limited, but irradiation is preferably performed from the substrate 21 side. The reason for this is that since the substrate 21 usually transmits ultraviolet rays with high efficiency, the ultraviolet rays can be effectively used. [Dicing step] Next, as shown in FIG. 5, dicing of the semiconductor wafer 4 is performed. Cutting is performed by blade cutting. Thereby, the semiconductor wafer 4 is cut to a specific size and singulated (dilated) to manufacture a semiconductor wafer 5 (step C). Dicing is performed, for example, from the circuit surface side of the semiconductor wafer 4 according to a conventional method. In addition, in this step, for example, a cutting method called full cutting that cuts into the dicing tape-integrated semiconductor back surface film 1 can be used. The cutting device used in this step is not particularly limited, and a conventionally known one can be used. The tensile elastic modulus of the adhesive layer 22 at 23 ° C. in step B becomes 1 MPa to 200 MPa. Therefore, it has a certain degree of hardness. In addition, since the dicing is performed while the adhesive layer 22 has a certain degree of hardness, it is possible to suppress friction or impact during the dicing of the dicing blade, and to reduce cracks generated on the side of the wafer. In addition, since the tensile elastic modulus of the adhesive layer 22 at 23 ° C after ultraviolet irradiation in step B becomes 200 MPa or less, it is possible to suppress the occurrence of wafer scattering during dicing. When the expansion of the dicing tape-integrated semiconductor back surface film 1 is performed, the expansion can be performed using a conventionally known expansion device. The expansion device includes a donut-shaped outer ring capable of pressing the dicing tape-integrated semiconductor back film 1 downward through a dicing ring, and an inner ring having a smaller diameter than the outer ring and supporting the dicing tape-integrated semiconductor back film. With this expansion step, it is possible to prevent adjacent semiconductor wafers from coming into contact with each other and causing breakage in a pickup step described below. [Pickup step] In order to recover the semiconductor wafer 5 which is then fixed to the dicing tape-integrated semiconductor back surface film 1, as shown in FIG. 6, the semiconductor wafer 5 is picked up and the semiconductor wafer 5 is removed from the dicing tape together with the semiconductor back film 40. 2 Peel off (step D). There is no particular limitation on the method of picking up, and various conventionally known methods can be adopted. For example, a method may be mentioned in which each semiconductor wafer 5 is lifted from the substrate 21 side of the dicing tape-integrated semiconductor back surface film 1 by a needle, and the lifted semiconductor wafer 5 is picked up by a pickup device. The back surface of the picked-up semiconductor wafer 5 is protected by a film 40 for semiconductor back surface. [Flip-Chip Connection Step] As shown in FIG. 7, the picked-up semiconductor wafer 5 is fixed to an adherend such as a substrate by a flip-chip bonding method (a flip-chip mounting method). Specifically, the semiconductor wafer 5 is fixed to the adherend 6 in such a manner that the circuit surface (also referred to as a surface, a circuit pattern formation surface, an electrode formation surface, etc.) of the semiconductor wafer 5 and the adherend 6 face each other according to a conventional method. For example, when the bump 51 formed on the circuit surface side of the semiconductor wafer 5 is brought into contact with the conductive material (solder or the like) 61 for bonding which is attached to the connection pad of the adherend 6, the conductive material is melted while being pressed, Electrical connection between the semiconductor wafer 5 and the adherend 6 can be ensured, and the semiconductor wafer 5 can be fixed to the adherend 6 (a flip-chip bonding step). At this time, a gap is formed between the semiconductor wafer 5 and the adherend 6, and the distance between the gaps is generally about 30 μm to 300 μm. Furthermore, after the semiconductor wafer 5 is chip-bonded (chip-bonded) to the adherend 6, the facing surface or gap between the semiconductor wafer 5 and the adherend 6 can be cleaned, and the sealing material (sealing resin) can be filled in the gap. Etc.) for sealing. As the adherend 6, various substrates such as a lead frame or a circuit board (such as a printed circuit board) can be used. The material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide tri-substrate, and a polyimide substrate. In the flip-chip bonding step, the materials of the bumps and the conductive material are not particularly limited, and examples thereof include tin-lead metal materials, tin-silver metal materials, tin-silver-copper metal materials, and tin-zinc. Solders (alloys) such as metallic materials, tin-zinc-bismuth metallic materials, gold-based metallic materials, copper-based metallic materials, etc. Furthermore, in the flip-chip bonding step, the conductive material is melted to connect the bump on the circuit surface side of the semiconductor wafer 5 and the conductive material on the surface of the adherend 6. The temperature at which the conductive material is melted is usually 260. ℃ (for example, 250 ° C to 300 ° C). The dicing tape-integrated semiconductor back film of the present invention can be made into a film having a heat resistance that can withstand even the high temperature in the flip-chip bonding step by forming the film for the semiconductor back with an epoxy resin or the like. In this step, it is preferable to clean the opposing surface (electrode formation surface) or the gap between the semiconductor wafer 5 and the adherend 6. The cleaning liquid used in the cleaning is not particularly limited, and examples thereof include an organic cleaning liquid and an aqueous cleaning liquid. The film for semiconductor back surface of the dicing tape-integrated semiconductor back surface film of the present invention has solvent resistance to a cleaning liquid, and has substantially no solubility to these cleaning liquids. Therefore, as described above, various cleaning liquids can be used as the cleaning liquid, and no special cleaning liquid is required, and the cleaning can be performed by the previous method. Then, a sealing step for sealing a gap between the flip-chip bonded semiconductor wafer 5 and the adherend 6 is performed as necessary. The sealing step is performed using a sealing resin. The sealing conditions at this time are not particularly limited. Usually, the sealing resin is thermally cured (reflowed) by heating at 175 ° C for 60 seconds to 90 seconds. However, the present invention is not limited to this. Cure for several minutes at 185 ° C. In the heat treatment in this step, not only the heat curing of the sealing resin, but also the heat curing of the film 40 for semiconductor back surface may be performed. In this case, it is not necessary to newly add a step for thermally curing the film 40 for semiconductor back surface. However, the present invention is not limited to this example, and the step of thermally curing the film 40 for semiconductor back surface may be separately performed before the thermal curing of the sealing resin. The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and it can be appropriately selected and used from sealing materials such as known sealing resins, and more preferably an insulating resin having elasticity. Examples of the sealing resin include a resin composition containing an epoxy resin. Examples of the epoxy resin include the epoxy resins exemplified above. In addition, as the sealing resin composed of a resin composition containing an epoxy resin, the resin component may contain, in addition to the epoxy resin, a thermosetting resin (such as a phenol resin) or a thermoplastic resin other than the epoxy resin. The phenol-based resin can also be used as a hardener for epoxy resins. Examples of such a phenol-based resin include the phenol-based resins exemplified above. Moreover, in the above-mentioned embodiment, the case where the sealing material (sealing resin etc.) in liquid form was filled in the space between the semiconductor wafer 5 and the to-be-adhered body 6 was demonstrated, but this invention is not limited to this example, A sheet-like resin composition can also be used. As a method for sealing a gap between a semiconductor wafer and an adherend using a sheet-like resin composition, for example, a conventionally known method such as Japanese Patent Laid-Open No. 2001-332520 can be adopted. Therefore, detailed description is omitted here. In addition, after the above-mentioned sealing step, heat treatment (reflow step after laser marking) may be performed as needed. The heat treatment conditions are not particularly limited, and can be performed in accordance with standards prescribed by the Semiconductor Technology Association (JEDEC). For example, the temperature (upper limit) can be performed in a range of 210 to 270 ° C and a time of 5 to 50 seconds. With this step, the semiconductor package can be mounted on a substrate (mother board, etc.). Since the semiconductor device manufactured by using the dicing tape-integrated semiconductor back film of the present invention is a semiconductor device mounted by a flip-chip mounting method, it is thinner and smaller in size than a semiconductor device mounted by a stick-chip mounting method. Therefore, it can be suitably used as various electronic devices, electronic parts, or materials and components. Specifically, as the electronic equipment using the flip-chip-mounted semiconductor device of the present invention, so-called "mobile phones" or "PHS (Personal Handy-phone System)", small computers (such as So-called "PDA (Personal Digital Assistant)" (portable information terminal), so-called "notebook computer", so-called "NETBOOK (trademark)", so-called "wearable computer", etc.), ""Mobilephone" and computer-integrated small electronic equipment, so-called "DIGITAL CAMERA (trademark)", so-called "digital video camera", small TV, small game console, small digital video player, so-called "electronic Notepad ", so-called" electronic dictionary ", so-called" electronic book "electronic device terminals, small digital clocks and other mobile electronic devices (portable electronic devices), etc., of course, can also be other than mobile (set type) Etc.) electronic equipment (e.g., so-called "desktop computers", thin TVs, recording / playback electronic equipment (hard disk recorders, DVD players, etc.), projection , Micromachine, etc.). Examples of materials and components of electronic parts, electronic equipment, and electronic parts include components of a so-called "CPU (Central Processing Unit)", various memory devices (so-called "memory", and hard disks). Etc). The manufacturing method of the semiconductor device according to the first embodiment has been described above. [Second Embodiment] The method for manufacturing a semiconductor device according to the second embodiment is the case where the method for manufacturing a semiconductor device according to the third aspect of the present invention is performed in step B first, and then in step A. The method for manufacturing a semiconductor device according to the second embodiment has at least the following steps: Step B: irradiate the adhesive layer with ultraviolet rays so that the tensile elastic modulus at 23 ° C. of the adhesive layer becomes 1 MPa to 200 MPa; In step A, after step B, a semiconductor wafer is bonded to the film-on-type semiconductor back surface film of the dicing tape-integrated semiconductor back surface film. In step C, after step A and step B described above, The semiconductor wafer is diced to form a semiconductor element; and step D, the semiconductor element and the film for the flip-chip semiconductor back surface are peeled off from the adhesive layer together. In the second embodiment, the dicing tape-integrated semiconductor back surface film 1 in the case (1) described above is used in the same manner as the first embodiment. That is, the tensile elastic modulus of the adhesive layer 22 of the second embodiment at 23 ° C. after the ultraviolet irradiation is 1 MPa to 200 MPa. [Ultraviolet irradiation step] First, the adhesive layer 22 is irradiated with ultraviolet rays (step B). The ultraviolet irradiation is performed so that the tensile elastic modulus at 23 ° C. of the adhesive layer after the ultraviolet irradiation becomes 1 MPa to 200 MPa. The specific ultraviolet irradiation amount and ultraviolet irradiation direction can be set to be the same as those in the first embodiment. [Mounting Step] Next, the semiconductor wafer 4 is bonded to the semiconductor back surface film 40 of the dicing tape-integrated semiconductor back surface film 1 and then held and fixed (step A). Then, if necessary, baking (heating) is performed in order to firmly fix the semiconductor back surface film 40 to the semiconductor wafer 40. Thereby, the film 40 for semiconductor back surfaces is hardened. This baking is performed, for example, under the conditions of 80 to 150 ° C and 0.1 to 24 hours. [Laser Marking Step] Next, the film 40 for semiconductor back surface is laser-marked using laser 36 for laser marking from the dicing tape 2 side as necessary. The conditions for the laser marking can be the same as those in the first embodiment. [Dicing step] Next, dicing of the semiconductor wafer 4 is performed. This step may be the same as that of the first embodiment. The tensile elastic modulus of the adhesive layer 22 at 23 ° C. in step B becomes 1 MPa to 200 MPa. Therefore, it has a certain degree of hardness. In addition, since the dicing is performed while the adhesive layer 22 has a certain degree of hardness, it is possible to suppress friction or impact during the dicing of the dicing blade, and to reduce cracks generated on the side of the wafer. In addition, since the tensile elastic modulus of the adhesive layer 22 at 23 ° C after ultraviolet irradiation in step B becomes 200 MPa or less, it is possible to suppress the occurrence of wafer scattering during dicing. In addition, since the dicing step is the same as that of the first embodiment, the description is omitted here. In the second embodiment, if the heating step is performed after the adhesive layer 22 is irradiated with ultraviolet rays, a portion that is not fixed by the ring frame (the central portion of the dicing tape 2) may sag together with the wafer due to the heat. . However, if the dicing tape 2 is expanded, the bending can be eliminated, so that no major problem occurs. On the other hand, at the dicing step, the ultraviolet irradiation has been completed, and the tensile elastic modulus at 23 ° C is 1 MPa to 200 MPa. Therefore, it is possible to suppress friction or impact during cutting of the blade, and reduce turtles generated on the side of the wafer crack. [Third Embodiment] A method for manufacturing a semiconductor device according to a third embodiment has at least the following steps: Step X: preparing a dicing tape-integrated semiconductor back film, which includes a substrate and a substrate; The dicing tape of the adhesive layer on the base material, and the film for the back surface of the flip-chip semiconductor formed on the adhesive layer of the dicing tape, and the tensile elastic modulus of the adhesive layer at 23 ° C. is 1 MPa ～ 200 MPa; step A, bonding a semiconductor wafer to the above-mentioned film-on-type semiconductor back film of the dicing tape-integrated semiconductor back film; step C, after the above step A, performing the semiconductor wafer The blade is cut to form a semiconductor element. In the third embodiment, the dicing tape-integrated semiconductor back surface film 1 in the case of the above (2) is used. That is, the tensile elastic modulus of the adhesive layer 22 of the third embodiment at 23 ° C. is 1 MPa to 200 MPa. [Preparation Step] First, the dicing tape-integrated semiconductor backside film 1 in the case of the above (2) is prepared (Step X). [Mounting Step] Next, the semiconductor wafer 4 is bonded to the semiconductor back surface film 40 of the dicing tape-integrated semiconductor back surface film 1 and then held and fixed (step A). Then, if necessary, baking (heating) is performed in order to firmly fix the semiconductor back surface film 40 to the semiconductor wafer 40. Thereby, the film 40 for semiconductor back surfaces is hardened. This baking is performed, for example, under the conditions of 80 to 150 ° C and 0.1 to 24 hours. [Laser Marking Step] Next, the film 40 for semiconductor back surface is laser-marked using laser 36 for laser marking from the dicing tape 2 side as necessary. The conditions for the laser marking can be the same as those in the first embodiment. [Dicing step] Next, dicing of the semiconductor wafer 4 is performed. This step may be the same as that of the first embodiment. The tensile elastic modulus of the adhesive layer 22 at 23 ° C is 1 MPa to 200 MPa. Therefore, it has a certain degree of hardness. In addition, since the dicing is performed while the adhesive layer 22 has a certain degree of hardness, it is possible to suppress friction or impact during the dicing of the dicing blade, and to reduce cracks generated on the side of the wafer. In addition, since the tensile elastic modulus of the adhesive layer 22 at 23 ° C. is 200 MPa or less, it is possible to suppress wafer scattering during dicing. [Pickup Step] Next, in order to recover the semiconductor wafer 5 which is subsequently fixed to the dicing tape-integrated semiconductor back surface film 1, the semiconductor wafer 5 is picked up, and the semiconductor wafer 5 is peeled from the dicing tape 2 together with the semiconductor back surface film 40. When an ultraviolet-curable adhesive is used as the adhesive constituting the adhesive layer 22, it may be picked up after irradiating ultraviolet rays. This makes it easy to pick up. In addition, since the pick-up step is the same as that of the first embodiment, the description is omitted here. The manufacturing method of the semiconductor device according to the third embodiment has been described above. [Embodiments] Hereinafter, preferred embodiments of the present invention will be described in detail. However, it is not intended to limit the gist of the present invention to only those described in the examples as long as there is no particular limitation on the materials, blending amounts, and the like. In addition, the case where it describes below as a part means a weight part. First, the manufacturing method of the dicing tape-integrated semiconductor back surface film of an Example and a comparative example is demonstrated below. In addition, the dicing tape-integrated semiconductor back surface films of Examples 1 to 3 and Example 5 are assumed to be used in the semiconductor device manufacturing method of the first embodiment described above, and Example 6 is assumed to be used in the semiconductor device of the second embodiment. As a manufacturing method, Example 4 is assumed to be a method for manufacturing a semiconductor device according to the third embodiment. (Example 1) <Production of film for semiconductor back surface> Epoxy resin (manufactured by Mitsubishi Chemical Corporation, JER YL980) 20 was used with respect to 100 parts of a solid content of an acrylate copolymer (manufactured by Nagase ChemteX, SG70L) 20 50 parts of epoxy resin (manufactured by Toto Kasei Co., Ltd., KI-3000), 75 parts of phenolic resin (manufactured by Meiwa Chemical Co., Ltd., MEH7851-SS), spherical silica (trade name "SO-25R", Admatechs Corporation) Co., Ltd., 180 parts average particle diameter, 0.5 parts, 10 parts dye (OILBKACK BS, manufactured by Orient Chemical Industries, Inc.), and 20 parts thermosetting catalyst (manufactured by Shikoku Chemical Co., 2PHZ) were dissolved in methyl ethyl In the ketone, a solution of the resin composition was prepared so that the solid content concentration became 23.6% by weight. This resin composition solution was applied as a release liner to a mold release process including a polyethylene terephthalate film (manufactured by Mitsubishi Resin, Diafoil MRA50) having a thickness of 50 μm and subjected to a polysiloxane release process. Then, the film was dried at 130 ° C. for 2 minutes to prepare a film A for semiconductor back surface having a thickness (average thickness) of 20 μm. <Production of Cutting Tape> 100 parts of 2-ethylhexyl acrylate (hereinafter also referred to as "2EHA") and 2-hydroxyethyl acrylate (into a reaction vessel provided with a condenser tube, a nitrogen introduction tube, a thermometer, and a stirring device) 19 parts (hereinafter also referred to as "HEA"), 0.4 parts of benzamidine peroxide and 80 parts of toluene. Polymerization treatment was performed at 60 ° C for 10 hours in a nitrogen gas stream to obtain an acrylic polymer A. 12 parts of 2-methacryloxyethyl isocyanate (hereinafter also referred to as "MOI") was added to the acrylic polymer A, and an addition reaction treatment was performed at 50 ° C for 60 hours in an air stream to obtain an acrylic system. Polymer A '. Next, 2 parts of a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane Co., Ltd.), and a UV-reactive cross-linking agent (to 100 parts (solid content) of the acrylic polymer A 'were added to toluene. 20 parts of Violet UV1700TL manufactured by Japan Industrial Chemical Co., Ltd. and 2 parts of a photopolymerization initiator (IRGACURE 369, manufactured by Ciba Specialty Chemicals), and an adhesive solution (also referred to as a solid solution concentration of 28%) "Adhesive Solution A"). The adhesive solution A prepared in the above was coated on the surface of the PET release liner subjected to the polysiloxane treatment, and dried at 120 ° C. for 2 minutes to form an adhesive layer A having a thickness of 30 μm. Then, a polypropylene film having a thickness of 80 μm was attached to the exposed surface of the adhesive layer A, and stored at 23 ° C. for 72 hours to obtain a cut sheet A. <Film for dicing tape-integrated semiconductor back surface> The film A for semiconductor back surface was bonded to the adhesive layer of the dicing tape A produced using a hand roller to produce the film A for dicing tape-integrated semiconductor back surface of Example 1. (Example 2) <Production of cutting tape> Polyisocyanate compound (trade name "CORONATE L", Nippon Polyurethane) was added to toluene with respect to 100 parts (solid content) of the acrylic polymer A 'prepared in Example 1. Co., Ltd.) 2 parts, and 2 parts of a photopolymerization initiator (IRGACURE 369, manufactured by Ciba Specialty Chemicals), and an adhesive solution (also referred to as "adhesive solution B" was prepared so that the solid content concentration became 28% "). The adhesive solution B prepared in the above was coated on the surface of the PET release liner on which the silicone treatment was performed, and dried at 120 ° C. for 2 minutes to form an adhesive layer B having a thickness of 30 μm. Then, a polypropylene film having a thickness of 80 μm was attached to the exposed surface of the adhesive layer B, and stored at 23 ° C. for 72 hours to obtain a cut sheet B. <Film for dicing tape-integrated semiconductor back surface> The film A for semiconductor back surface was bonded to the adhesive layer of the dicing tape B produced using a hand roller to produce the film B for dicing tape-integrated semiconductor back surface of Example 2. (Example 3) <Production of a cutting tape> Polyisocyanate compound (trade name "CORONATE L", Nippon Polyurethane) was added to toluene with respect to 100 parts (solid content) of the acrylic polymer A 'prepared in Example 1. Co., Ltd.) 2 parts, and photopolymerization initiator (IRGACURE 369, manufactured by Ciba Specialty Chemicals) 0.06 parts, and an adhesive solution (also referred to as "adhesive solution C" was prepared so that the solid content concentration became 28% "). The adhesive solution C prepared in the above was coated on the surface of the PET release liner on which the polysiloxane treatment was performed, and dried at 120 ° C. for 2 minutes to form an adhesive layer C having a thickness of 30 μm. Then, a polypropylene film having a thickness of 80 μm was attached to the exposed surface of the adhesive layer C, and stored at 23 ° C. for 72 hours to obtain a cut sheet C. <Film for dicing tape-integrated semiconductor back surface> The film A for semiconductor back surface was bonded to the adhesive layer of the dicing tape C produced using a hand roller to produce the film C for dicing tape-integrated semiconductor back surface of Example 3. (Example 4) <Production of cutting tape> Polyisocyanate compound (trade name "CORONATE L", Nippon Polyurethane) was added to toluene with respect to 100 parts (solid content) of the acrylic polymer A 'prepared in Example 1. Co., Ltd.) 8 parts and photopolymerization initiator (IRGACURE 369, manufactured by Ciba Specialty Chemicals) 2 parts, and an adhesive solution was prepared so that the solid content concentration became 28% (also referred to as "adhesive solution D "). The adhesive solution D prepared in the above was coated on the surface of the PET release liner on which the polysiloxane treatment was performed, and dried at 120 ° C. for 2 minutes to form an adhesive layer D having a thickness of 30 μm. Then, a polypropylene film having a thickness of 80 μm was attached to the exposed surface of the adhesive layer D, and stored at 23 ° C. for 72 hours to obtain a cut sheet D. <Film for dicing tape-integrated semiconductor back surface> The film A for semiconductor back surface was bonded to the adhesive layer of the dicing tape D produced using a hand roller to produce the film D for dicing tape-integrated semiconductor back surface of Example 4. (Example 5) <Production of film for semiconductor back surface> Epoxy resin (manufactured by Mitsubishi Chemical Corporation, JER YL980) 140 was used with respect to 100 parts of a solid component of an acrylate copolymer (manufactured by Nagase ChemteX, SG70L). 140 parts of epoxy resin (manufactured by Toto Kasei Co., Ltd., KI-3000), 290 parts of phenol resin (manufactured by Meiwa Chemical Co., Ltd., MEH7851-SS), spherical silica (trade name "SO-25R", Admatechs Co., Ltd. Co., Ltd., with an average particle size of 0.5 μm), 470 parts, dyes (manufactured by Orient Chemical Industries, OILBKACK BS), 10 parts, and thermal hardening accelerator (manufactured by Shikoku Chemical Co., 2PHZ) were dissolved in methyl ethyl In the ketone, a solution of the resin composition was prepared so that the solid content concentration became 23.6% by weight. This resin composition solution was applied as a release liner to a mold release process including a polyethylene terephthalate film (manufactured by Mitsubishi Resin, Diafoil MRA50) having a thickness of 50 μm and subjected to a polysiloxane release process. Then, the film was dried at 130 ° C. for 2 minutes to prepare a film B for semiconductor back surface having a thickness (average thickness) of 20 μm. <Film for dicing tape-integrated semiconductor back surface> Using a hand roller, the film B for semiconductor back surface was bonded to the adhesive layer of the dicing tape B produced in Example 2 to produce a dicing tape-integrated semiconductor back surface of Example 5. Membrane E. (Example 6) <Die tape integrated semiconductor back film> The semiconductor back film A produced in Example 1 was bonded to the adhesive layer of the dicing tape B produced in Example 2 using a hand roller. Then, using an ultraviolet irradiation device (high-pressure mercury lamp), the cutting belt side was set to 300 mJ / cm 2 In this way, the surface of the cutting tape is irradiated with ultraviolet rays to harden the adhesive. Through the above operations, the dicing tape-integrated semiconductor back film F of Example 6 was produced. (Comparative Example 1) <Production of Cutting Tape> Polyisocyanate compound (trade name "CORONATE L", Nippon Polyurethane) was added to toluene with respect to 100 parts (solid content) of the acrylic polymer A 'prepared in Example 1. Co., Ltd.) 4 parts, and an adhesive solution (also referred to as "adhesive solution G") was prepared so that the solid content concentration became 28%. The adhesive solution G prepared in the above was coated on the surface of the PET release liner on which the polysiloxane treatment was performed, and dried at 120 ° C. for 2 minutes to form an adhesive layer G having a thickness of 30 μm. Then, a polypropylene film having a thickness of 80 μm was attached to the exposed surface of the adhesive layer G, and stored at 23 ° C. for 72 hours to obtain a cut sheet G. <Film for dicing tape-integrated semiconductor back surface> The film A for semiconductor back surface was bonded to the adhesive layer of the dicing tape G produced using a hand roller to produce the film G for dicing tape-integrated semiconductor back surface of Comparative Example 1. (Comparative Example 2) <Preparation of Cutting Tape> Polyisocyanate compound (trade name "CORONATE L", Nippon Polyurethane) was added to toluene with respect to 100 parts (solid content) of the acrylic polymer A 'prepared in Example 1. Co., Ltd.) 2 parts, and an adhesive solution (also referred to as "adhesive solution H") was prepared so that the solid content concentration became 28%. The adhesive solution H prepared in the above was coated on the surface of the PET release liner on which the silicone treatment was performed, and dried at 120 ° C. for 2 minutes to form an adhesive layer H having a thickness of 30 μm. Then, a polypropylene film having a thickness of 80 μm was attached to the exposed surface of the adhesive layer H, and stored at 23 ° C. for 72 hours to obtain a cut sheet H. <Film for dicing tape-integrated semiconductor back surface> The film B for semiconductor back surface was bonded to the adhesive layer of the dicing tape H produced using a hand pressure roller to prepare the film H for dicing tape-integrated semiconductor back surface of Comparative Example 2. (Comparative Example 3) <Preparation of Cutting Tape> A polyisocyanate compound (trade name "CORONATE L", Nippon Polyurethane) was added to toluene with respect to 100 parts (solid content) of the acrylic polymer A 'prepared in Example 1. Co., Ltd.) and 2 parts of 2-hydroxyethyl acrylate and 10 parts of 2-hydroxyethyl acrylate, and an adhesive solution (also referred to as "adhesive solution I") was prepared so that the solid content concentration became 28%. The adhesive solution I prepared above was coated on the surface of the PET release liner on which the silicone treatment was performed, and dried at 120 ° C. for 2 minutes to form an adhesive layer I having a thickness of 30 μm. Then, a polypropylene film having a thickness of 80 μm was attached to the exposed surface of the adhesive layer I, and stored at 23 ° C. for 72 hours to obtain a cut sheet I. <Film for dicing tape-integrated semiconductor back surface> The film A for semiconductor back surface was bonded to the adhesive layer of the dicing tape I produced using a hand roller to prepare the dicing tape-integrated semiconductor back film I of Comparative Example 3. [Measurement of the elastic modulus of the adhesive layer before ultraviolet irradiation and the elastic modulus of the adhesive layer after ultraviolet irradiation] The initial sample size (distance between chucks) of the tensile test was 10 mm, Cross-section area 0.1 ～ 0.5 mm 2 A test piece was prepared in this manner, and a tensile test was performed at a measurement temperature of 23 ° C. at a tensile speed of 50 mm / min, and the change in the elongation (mm) of the sample was measured. As a result, a tangent line was drawn at the initial rising portion of the obtained SS curve, and the tensile strength equivalent to the 100% elongation of the tangent line was divided by the cross-sectional area of the substrate, and the tensile elasticity before ultraviolet irradiation was set. Modulus. In addition, regarding the measurement of the tensile elastic modulus after UV irradiation, a UV irradiation device (Nitto Seiki (trade name: UM-810)) was used to accumulate the amount of light by UV irradiation to 300 mJ / cm 2 This method is performed after irradiating ultraviolet rays from the substrate side of the dicing tape. The results are shown in Table 1. [Measurement of the elastic modulus of the film for semiconductor back surface after heat curing] The film for semiconductor back surface was heated at 120 ° C for 2 hours, and then the release liner was removed. Then, a sample with a width of 10 mm, a length of 22.5 mm, and a thickness of 0.02 mm was cut from the heated semiconductor back film. Next, a dynamic viscoelasticity measuring device "Solid Analyzer RS A2" manufactured by Rheometric was used to perform dynamic viscoelasticity in a tensile mode, a frequency of 1 Hz, a heating rate of 10 ° C / min, and a nitrogen environment from 0 ° C to 100 ° C. Determination. Read the value at 23 ° C at this time. The results are shown in Table 1. [Measurement of Peeling Force] Regarding Examples 1 to 3, Example 5, and Example 6, using a UV irradiation device (Nitto Seiki (trade name: UM-810)), the cumulative amount of light under UV irradiation was 300 mJ / cm 2 In this way, the produced dicing tape-integrated semiconductor back surface film is irradiated with ultraviolet rays from the substrate side of the dicing tape. Next, an adhesive tape (manufactured by Nitto Denko Corporation, trade name: BT-315) was attached to the film side for semiconductor back surface at room temperature to reinforce it. Cut with a cutter to 20 mm wide x 120 mm long. Thereafter, the adhesive layer of the dicing tape and the semiconductor back surface were sandwiched, and a tensile tester (made by Shimadzu Corporation, trade name: AGS-J) was used at 23 ° C at a peeling speed of 300 mm / min The T-peel test was used to peel the adhesive layer from the film for semiconductor back surface, and the force at this time (maximum load, unit: N / 20 mm) was read. Regarding Example 4 and Comparative Examples 1 to 3, an adhesive tape (manufactured by Nitto Denko Corporation, trade name: BT-315) was bonded to the produced film for a semiconductor back surface of a dicing tape-integrated semiconductor back surface at room temperature Side for reinforcement. Cut with a cutter to 20 mm wide x 120 mm long. Thereafter, the adhesive layer of the dicing tape and the film for the semiconductor back surface were clamped, and a tensile tester (made by Shimadzu Corporation, trade name: AGS-J) was used at 23 ° C at a peeling speed of 300 mm / min The T-peel test was used to peel the adhesive layer from the film for semiconductor back surface, and the force at this time (maximum load, unit: N / 20 mm) was read. The results are shown in Table 1. The measurement of the peeling force is assumed to be a peeling force at the time of cutting (at the time of picking up). [Ratio of the elastic modulus of the adhesive layer during dicing to the elastic modulus of the film for semiconductor back surface] A semiconductor device was manufactured using the dicing tape-integrated semiconductor back film of Examples 1 to 3, Example 5, and Example 6 In this case, at the time of dicing, the adhesive layer is in a state after being irradiated with ultraviolet rays, and the film for semiconductor back surface is cured by heat. Therefore, regarding Examples 1 to 3, Example 5, and Example 6, the ratio of the elastic modulus of the adhesive after ultraviolet irradiation to the elastic modulus of the film for semiconductor back surface after heat curing is shown in Table 1. When a semiconductor device was manufactured using the dicing tape-integrated semiconductor back surface film of Example 4 and Comparative Examples 1 to 3, the adhesive was not irradiated with ultraviolet rays during dicing, and the semiconductor back surface film was thermally cured. Therefore, regarding Example 4 and Comparative Examples 1 to 3, Table 1 shows the ratio of the elastic modulus of the adhesive before ultraviolet irradiation to the elastic modulus of the film for semiconductor back surface after heat curing. The ratio of the elastic modulus of the adhesive layer at the time of dicing to the elastic modulus of the film for semiconductor back surface is determined by the following formula. [Ratio of the elastic modulus of the adhesive layer at the time of cutting to the elastic modulus of the film for the semiconductor back surface] = (the elastic modulus of the film for the semiconductor back surface / the elastic modulus of the adhesive layer) [Evaluation of chipping] First , Back grinding semiconductor wafers (8 inches in diameter, 0.6 mm thick; bare silicon wafers) to prepare mirror wafers with a thickness of 0.2 mm. <About Examples 1 to 3 and Example 5> Next, about Examples 1 to 3 and Example 5, the release liner was peeled from the film for a semiconductor tape-integrated semiconductor back surface, and the mirror wafer was then removed at 70 ° C. A semiconductor wafer with a dicing tape-integrated semiconductor back surface film was fabricated by rolling and bonding to the film for semiconductor back surface. Then, it heated at 120 degreeC for 2 hours. Then, using a UV irradiation device (Nitto Seiki (trade name UM-810)), the cumulative amount of light under UV irradiation was 300 mJ / cm 2 This method irradiates ultraviolet rays from the substrate side of the dicing tape. Then, the wafer is cut to obtain a silicon wafer. Wafer polishing conditions, bonding conditions, and dicing conditions are described below. The cut depth Z1 is adjusted so that the depth from the surface of the silicon wafer becomes 45 μm. The cut depth Z2 is adjusted so as to reach 1/2 of the thickness of the adhesive layer of the dicing tape. (Wafer polishing conditions) Polishing device: Trade name "DFG-8560", manufactured by DISCO Corporation (Lamination condition) Mounting device: Trade name "MA-3000III", manufactured by Nitto Seiki Co., Ltd. Adhesive pressure: 0.15 MPa Stage temperature at the time of attaching: 70 ° C (cutting conditions) Cutting device: Trade name "DFD-6361", DISCO manufactured cutting ring: "2-8-1" (manufactured by DISCO) Cutting Speed: 30 mm / sec Cutting blade: Z1: "203O-SE 27HCDD" manufactured by DISCO Corporation Z2: "203O-SE 27HCBB" manufactured by DISCO Corporation Cutting blade revolution: Z1: 40,000 r / min Z2: 45,000 r / min Cutting method : Step-cut wafer size: 2.0 mm square Next, the silicon wafer was peeled (picked) together with the film for semiconductor back surface. The cut surface of the silicon wafer (the last cut surface among the four cut surfaces) was observed with a microscope (VHX500 manufactured by Keyence), and the depth of the crack was measured. The depth of the crack refers to the depth from the interface between the film for semiconductor back surface and the silicon wafer. When the thickness of the silicon wafer was set to 100%, the case where the depth of the crack did not reach 10% was determined as ◎. A case where the depth of the crack was 10% or more and less than 12% was determined to be ○. A case where the depth of the crack was 12% or more was judged as ×. The results are shown in Table 1. <About Example 6> About Example 6, first, a UV irradiation device (Nitto Seiki (trade name: UM-810)) was used to accumulate the amount of light under UV irradiation to 300 mJ / cm. 2 This method irradiates ultraviolet rays from the substrate side of the dicing tape to the dicing tape-integrated semiconductor back surface film. Then, the release liner was peeled off from the dicing tape-integrated semiconductor back surface film, and then the mirror wafer roll was pressure-bonded to the semiconductor back film at 70 ° C. to be bonded to form a dicing tape-integrated semiconductor back surface. Semiconductor wafer with film. Then, it heated at 120 degreeC for 2 hours. Then, the wafer is cut to obtain a silicon wafer. Wafer polishing conditions, bonding conditions, and dicing conditions were set to be the same as those of the above-mentioned Examples 1 to 3 and Example 5. Then, the silicon wafer was peeled (picked) together with the film for semiconductor back surface. The cut surface of the silicon wafer (the last cut surface among the four cut surfaces) was observed with a microscope (VHX500 manufactured by Keyence), and the depth of the crack was measured. When the thickness of the silicon wafer was set to 100%, the case where the depth of the crack did not reach 10% was determined as ◎. A case where the depth of the crack was 10% or more and less than 12% was determined to be ○. A case where the depth of the crack was 12% or more was judged as ×. The results are shown in Table 1. <About Example 4 and Comparative Examples 1 to 3> About Example 4 and Comparative Examples 1 to 3, the release liner was peeled from the dicing tape-integrated semiconductor back film, and the mirror wafer was rolled at 70 ° C. It is bonded to the film for semiconductor back surface and bonded together to form a semiconductor wafer with a dicing tape-integrated semiconductor back film. Then, the wafer is cut to obtain a silicon wafer. Wafer polishing conditions, bonding conditions, and dicing conditions were set to be the same as those of the above-mentioned Examples 1 to 3 and Example 5. Then, the silicon wafer was peeled (picked) together with the film for semiconductor back surface. The cut surface of the silicon wafer (the last cut surface among the four cut surfaces) was observed with a microscope (VHX500 manufactured by Keyence), and the depth of the crack was measured. When the thickness of the silicon wafer was set to 100%, the case where the depth of the crack did not reach 10% was determined as ◎. A case where the depth of the crack was 10% or more and less than 12% was determined to be ○. A case where the depth of the crack was 12% or more was judged as ×. The results are shown in Table 1. [Table 1]

1‧‧‧切割帶一體型半導體背面用膜1‧‧‧ Film for integrated semiconductor back surface with dicing tape

2‧‧‧切割帶2‧‧‧ cutting tape

4‧‧‧半導體晶圓4‧‧‧ semiconductor wafer

5‧‧‧半導體晶片5‧‧‧ semiconductor wafer

6‧‧‧被接著體6‧‧‧ to be followed

21‧‧‧基材21‧‧‧ substrate

22‧‧‧黏著劑層22‧‧‧ Adhesive layer

23‧‧‧對應於半導體晶圓之貼合部分之部分23‧‧‧ Corresponds to the bonding part of the semiconductor wafer

36‧‧‧鐳射36‧‧‧laser

38‧‧‧紫外線38‧‧‧UV

40‧‧‧半導體背面用膜(覆晶型半導體背面用膜)40‧‧‧Semiconductor Back Film (Flip-Chip Semiconductor Back Film)

51‧‧‧形成於半導體晶片5之電路面側之凸塊51‧‧‧ Bumps formed on the circuit surface side of the semiconductor wafer 5

61‧‧‧被接著於被接著體6之連接焊墊上之接合用之導電材料61‧‧‧Conductive conductive material for bonding to the bonding pads of the bonded body 6

圖1係表示本發明之一實施形態之切割帶一體型半導體背面用膜之一例之剖面模式圖。 圖2係用以說明第1實施形態之半導體裝置之製造方法之剖面模式圖。 圖3係用以說明第1實施形態之半導體裝置之製造方法之剖面模式圖。 圖4係用以說明第1實施形態之半導體裝置之製造方法之剖面模式圖。 圖5係用以說明第1實施形態之半導體裝置之製造方法之剖面模式圖。 圖6係用以說明第1實施形態之半導體裝置之製造方法之剖面模式圖。 圖7係用以說明第1實施形態之半導體裝置之製造方法之剖面模式圖。FIG. 1 is a schematic cross-sectional view showing an example of a dicing tape-integrated semiconductor back film according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view for explaining a method for manufacturing a semiconductor device according to the first embodiment. Fig. 3 is a schematic cross-sectional view for explaining a method for manufacturing a semiconductor device according to the first embodiment. FIG. 4 is a schematic cross-sectional view for explaining a method of manufacturing a semiconductor device according to the first embodiment. Fig. 5 is a schematic cross-sectional view for explaining a method for manufacturing a semiconductor device according to the first embodiment. FIG. 6 is a schematic cross-sectional view for explaining a method for manufacturing a semiconductor device according to the first embodiment. FIG. 7 is a schematic cross-sectional view for explaining a method for manufacturing a semiconductor device according to the first embodiment.

Claims (7)

一種切割帶一體型半導體背面用膜，其特徵在於，具備： 具有基材及形成於上述基材上之黏著劑層之切割帶、及 形成於上述切割帶之上述黏著劑層上之覆晶型半導體背面用膜，且 上述黏著劑層之紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa。A dicing tape-integrated semiconductor back film, comprising: a dicing tape having a base material and an adhesive layer formed on the base material; and a crystal-covered type formed on the adhesive layer of the dicing tape. The film for semiconductor back surface, and the tensile elastic modulus at 23 ° C. after the ultraviolet ray irradiation of the adhesive layer is 1 MPa to 200 MPa. 如請求項1之切割帶一體型半導體背面用膜，其中至少上述黏著劑層之晶圓貼附部之紫外線照射後之23℃下之拉伸彈性模數為1 MPa～200 MPa。For example, the dicing tape-integrated semiconductor back film of claim 1, wherein the tensile modulus of elasticity at 23 ° C after ultraviolet irradiation of at least the wafer attachment portion of the adhesive layer is 1 MPa to 200 MPa. 如請求項1或2之切割帶一體型半導體背面用膜，其中對上述黏著劑層進行紫外線照射後之上述覆晶型半導體背面用膜與上述黏著劑層之間的23℃下之剝離力為0.01 N/20 mm以上且0.2 N/20 mm以下。For example, the dicing tape-integrated semiconductor back film of claim 1 or 2, wherein the peel force at 23 ° C. between the film for the flip-chip semiconductor back surface and the adhesive layer after the adhesive layer is irradiated with ultraviolet rays is 0.01 N / 20 mm or more and 0.2 N / 20 mm or less. 一種切割帶一體型半導體背面用膜，其特徵在於，具備： 具有基材及形成於上述基材上之黏著劑層之切割帶、及 形成於上述切割帶之上述黏著劑層上之覆晶型半導體背面用膜，且 上述黏著劑層之23℃下之拉伸彈性模數為1 MPa～200 MPa。A dicing tape-integrated semiconductor back film, comprising: a dicing tape having a base material and an adhesive layer formed on the base material; and a crystal-covered type formed on the adhesive layer of the dicing tape. A film for semiconductor back surface, and the tensile elastic modulus at 23 ° C of the adhesive layer is 1 MPa to 200 MPa. 如請求項4之切割帶一體型半導體背面用膜，其中至少上述黏著劑層之晶圓貼附部之23℃下之拉伸彈性模數為1 MPa～200 MPa。For example, the film for a dicing tape-integrated semiconductor back surface of claim 4, wherein at least the tensile elastic modulus at 23 ° C. of the wafer attachment portion of the adhesive layer is 1 MPa to 200 MPa. 如請求項4或5之切割帶一體型半導體背面用膜，其中上述覆晶型半導體背面用膜與上述黏著劑層之間之23℃下之剝離力為0.01 N/20 mm以上且0.2 N/20 mm以下。For example, the dicing tape-integrated semiconductor back film of claim 4 or 5, wherein the peel force at 23 ° C between the film-on-chip semiconductor back film and the adhesive layer is 0.01 N / 20 mm or more and 0.2 N / 20 mm or less. 一種半導體裝置之製造方法，其特徵在於，其係使用如請求項1至3中任一項之切割帶一體型半導體背面用膜之半導體裝置之製造方法，且具備以下步驟： 步驟A，於上述切割帶一體型半導體背面用膜之上述覆晶型半導體背面用膜上貼合半導體晶圓； 步驟B，以使上述黏著劑層之23℃下之拉伸彈性模數成為1 MPa～200 MPa之方式對上述黏著劑層照射紫外線； 步驟C，於上述步驟A及上述步驟B之後，對上述半導體晶圓進行刀片切割而形成半導體元件；及 步驟D，將上述半導體元件與上述覆晶型半導體背面用膜一起從上述黏著劑層剝離。A method for manufacturing a semiconductor device, characterized in that it is a method for manufacturing a semiconductor device using the dicing tape-integrated semiconductor back film according to any one of claims 1 to 3, and includes the following steps: Step A, based on the above The semiconductor wafer on the above-mentioned flip-chip type semiconductor backside film with a dicing tape integrated semiconductor backside is bonded to a semiconductor wafer; step B, so that the tensile elastic modulus at 23 ° C of the adhesive layer becomes 1 MPa to 200 MPa. Irradiate the adhesive layer with ultraviolet rays; step C, after the steps A and B, the semiconductor wafer is diced to form a semiconductor element; and step D, the semiconductor element and the flip-chip semiconductor are formed on the back surface It peeled from the said adhesive layer together with the film.
TW106125058A 2016-07-29 2017-07-26 Film for dicing tape-integrated semiconductor back surface and method for manufacturing semiconductor device TW201816862A (en)

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