TWI884909B - Adhesive film and adhesive film with wafer cutting tape - Google Patents

Abstract

The present invention provides a bonding film suitable for suppressing the occurrence of cracks caused by thermal stress in a formed bonding layer, and a bonding film with a wafer tape having such a bonding film. The bonding film 10 of the present invention has a fracture resistance of 10 MPa or more and/or a fracture elongation of 60% or more in a tensile test of a 5 mm wide bonding film specimen after hardening under the conditions of an initial chuck distance of 10 mm, 125°C and a tensile speed of 1 mm/sec. The bonding film X with a wafer tape of the present invention has such a bonding film 10 and a wafer tape 20. The wafer tape 20 has a laminated structure including a substrate 21 and an adhesive layer 22. The adhesive film 10 is in close contact with the adhesive layer 22 of the dicing ribbon 20 in a releasable manner.

Description

Adhesive film and adhesive film with cutting tape

The present invention relates to a bonding film and a bonding film with a wafer cutting tape which can be used in the manufacturing process of a semiconductor device.

In the process of manufacturing semiconductor devices, when a semiconductor chip accompanied by an adhesive film of a size equivalent to that of a die-bonding chip, i.e., a semiconductor chip with an adhesive film, is obtained, an adhesive film with a dicing tape is used. The adhesive film with a dicing tape has a size corresponding to the semiconductor wafer to be processed, for example, a dicing tape including a substrate and an adhesive layer, and an adhesive film that is in close contact with the adhesive layer in a releasable manner.

As a method for obtaining a semiconductor chip with a bonding film attached using a bonding film with a cutting tape, there is known a method in which the bonding film is cut through a step for expanding the cutting tape in the bonding film with a cutting tape. In this method, first, a semiconductor wafer as a workpiece is bonded to a bonding film of a bonding film with a cutting tape. The semiconductor wafer is processed, for example, in a manner that it can be cut together with the cutting of the bonding film and singulated into a plurality of semiconductor chips. Next, in order to cut the bonding film in a manner that a plurality of bonding film pieces each of which is in close contact with the semiconductor chip are generated from the bonding film on the cutting tape, the cutting tape of the bonding film with a cutting tape of the semiconductor wafer is kept expanded in the radial direction of the wafer (expansion step for cutting). In the expansion step, the portion on the bonding film corresponding to the portion where the bonding film in the semiconductor wafer is cut is also cut, and the semiconductor wafer is singulated into a plurality of semiconductor chips on the bonding film or the bonding tape with the dicing tape attached. Next, for example, after a cleaning step, each semiconductor chip is lifted from the lower side of the dicing tape by the pin member of the pickup mechanism together with the bonding film that is in close contact with it and is equivalent to the size of the chip, and then picked up from the dicing tape. In this way, a semiconductor chip with a bonding film attached is obtained. The semiconductor chip with a bonding film attached is fixed to an attached body such as a mounting substrate through the bonding film by bonding. For example, the technology related to the bonding film with a wafer ribbon used in the above manner and the bonding film included therein is described in the following patent documents 1 to 3. [Prior technical document] [Patent document]

[Patent Document 1] Japanese Patent Publication No. 2007-2173 [Patent Document 2] Japanese Patent Publication No. 2010-177401 [Patent Document 3] Japanese Patent Publication No. 2012-23161

[The problem the invention is trying to solve]

There is a requirement for bonding films used for semiconductor chips to form bonding layers that are not prone to cracking due to thermal stress, for example, even when subjected to a specific temperature cycle test. In addition, there is a tendency that the thicker the bonding film, the easier it is to generate cracking due to thermal stress in the bonding layer formed by it. The generation of cracks in the bonding layer between the mounting substrate and the semiconductor chip may cause damage or disconnection in the wiring on the surface of the mounting substrate that contacts the bonding layer, which is not good.

The present invention is conceived based on the above situation, and its purpose is to provide a bonding film suitable for suppressing the generation of cracks caused by thermal stress in the formed bonding layer, and a bonding film with a cutting tape having such a bonding film. [Technical means for solving the problem]

According to the first aspect of the present invention, a bonding film is provided. The bonding film has a breaking strength of 10 MPa or more and/or a breaking elongation of 60% or more in a tensile test on a 5 mm wide bonding film specimen after curing under the conditions of an initial chuck distance of 10 mm, 125°C and a tensile speed of 1 mm/second. The bonding film preferably has a breaking strength of 13 MPa or more, more preferably 16 MPa or more, more preferably 19 MPa or more, and more preferably 22 MPa or more in a tensile test on a 5 mm wide bonding film specimen after curing under the above conditions. The elongation at break of the adhesive film in the tensile test of the adhesive film specimen with a width of 5 mm after hardening under the above conditions is preferably 65% or more, more preferably 70% or more, and more preferably 75% or more. The adhesive film of this structure can be used as a bonding film for die bonding. In addition, the adhesive film of this structure can be used to obtain a semiconductor chip with the adhesive film in the manufacturing process of a semiconductor device in a form of close contact with the adhesive layer side of a wafer cutting tape.

The inventors of the present invention have found that the above-mentioned structure having a fracture resistance of 10 MPa or more and/or a fracture elongation of 60% or more in a tensile test of a 5 mm wide cured bonding film specimen under the conditions of an initial chuck distance of 10 mm, 125°C and a tensile speed of 1 mm/sec is suitable for suppressing the occurrence of cracks caused by thermal stress in the bonding layer formed by the bonding film, even when the bonding film is relatively thick. For example, as shown in the following examples and comparative examples.

It is believed that the breaking strength of the present adhesive film in the above-mentioned tensile test on the cured adhesive film specimen with a width of 5 mm is 10 MPa or more, preferably 13 MPa or more, more preferably 16 MPa or more, more preferably 19 MPa or more, and more preferably 22 MPa or more, which is suitable for resisting the strain generated and accumulated inside the cured adhesive film, i.e., the adhesive layer, due to the action of thermal stress and inhibiting the formation of cracks.

It is believed that the elongation at break of the adhesive film in the tensile test of the adhesive film specimen with a width of 5 mm after curing is 60% or more, preferably 65% or more, more preferably 70% or more, and more preferably 75% or more, which is suitable for suppressing the internal strain caused by the action of thermal stress in the adhesive film, i.e., the adhesive layer after curing. In the adhesive layer, the smaller the internal strain, the less likely it is to produce cracks.

As described above, the bonding film of the first aspect of the present invention is suitable for suppressing the occurrence of cracks caused by thermal stress in the bonding layer formed thereby.

The tensile storage elastic modulus of the adhesive film at 125°C obtained by measuring a 5 mm wide adhesive film specimen after curing under the conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of ±0.5 μm, and a heating rate of 10°C/min is preferably 40 MPa or more, more preferably 50 MPa or more, and even more preferably 60 MPa or more. This structure is better in terms of suppressing the generation of cracks caused by thermal stress in the formed adhesive layer.

The thickness of the bonding film is preferably 40 μm or more, more preferably 60 μm or more, and even more preferably 80 μm or more. This structure is preferred in terms of using the bonding film of the present invention as a bonding film for embedding the first semiconductor chip mounted on the mounting substrate by wire bonding and the entirety or a portion of the bonding wire connected to the first semiconductor chip, and forming a bonding layer for bonding the second semiconductor chip to the mounting substrate (a thicker bonding film for embedding the semiconductor chip). Or the structure related to the thickness of the bonding film is preferred in terms of using the bonding film of the present invention as a bonding film for embedding the first semiconductor chip mounted on the mounting substrate by flip-chip bonding, and forming a bonding layer for bonding the second semiconductor chip to the mounting substrate (a thicker bonding film for embedding the semiconductor chip).

The thickness of the bonding film is preferably 150 μm or less, more preferably 140 μm or less, and even more preferably 130 μm or less. This structure is preferred in terms of achieving good cutting of the bonding film when the bonding film is in close contact with the adhesive layer side of the dicing tape in the above-mentioned expansion step for cutting.

The viscosity of the bonding film at 120°C in an uncured state is preferably 300 Pa·s or more, more preferably 700 Pa·s or more, and more preferably 1000 Pa·s or more. The viscosity of the bonding film at 120°C in an uncured state is preferably 5000 Pa·s or less, more preferably 4500 Pa·s or less, and more preferably 4000 Pa·s or less. The above-mentioned structures related to the viscosity of the bonding film are preferred in terms of using the bonding film as the above-mentioned various thick bonding films for forming a bonding layer accompanying the embedding of a semiconductor chip or a bonding wire.

The bonding film can be formed in a manner that can embed the first semiconductor chip mounted on the mounting substrate by wire bonding and the entire or a part of the bonding wire connected to the first semiconductor chip, and bond the second semiconductor chip to the mounting substrate. The bonding film can also be formed in a manner that can embed the first semiconductor chip mounted on the mounting substrate by flip-chip, and bond the second semiconductor chip to the mounting substrate.

According to the second aspect of the present invention, a bonding film with a cutting tape is provided. The bonding film with a cutting tape has a cutting tape and the bonding film of the first aspect of the present invention. The cutting tape has a layered structure including a substrate and an adhesive layer. The bonding film is in close contact with the adhesive layer of the cutting tape in a releasable manner. This bonding film with a cutting tape having the bonding film of the first aspect of the present invention is suitable for providing a bonding film suitable for suppressing the generation of cracks caused by thermal stress in the formed bonding layer, for example, on a wafer scale.

FIG. 1 is a cross-sectional schematic diagram of a bonding film X with a wafer tape attached in one embodiment of the present invention. The bonding film X with a wafer tape attached has a laminated structure including a bonding film 10 and a wafer tape 20 in one embodiment of the present invention. The wafer tape 20 has a laminated structure including a substrate 21 and an adhesive layer 22. The adhesive layer 22 has an adhesive surface 22a on the bonding film 10 side. The bonding film 10 is in close contact with the adhesive layer 22 or the adhesive surface 22a of the wafer tape 20 in a releasable manner. The bonding film X with a wafer tape attached can be used in a process of obtaining a semiconductor chip with a bonding film attached when manufacturing a semiconductor device, for example, in a blade dicing step or an expansion step as described below. Furthermore, the bonding film X with the wafer cutting tape has a disc shape having a size corresponding to a semiconductor wafer as a workpiece in the process of manufacturing a semiconductor device, and its diameter is, for example, in the range of 300 to 390 mm (corresponding to 12-inch wafers), 200 to 280 mm (corresponding to 8-inch wafers), 450 to 530 mm (corresponding to 18-inch wafers), or 150 to 230 mm (corresponding to 6-inch wafers).

The bonding film 10 in the bonding film X with a wafer tape has a structure capable of functioning as a die-bonding adhesive exhibiting thermosetting properties. The bonding film 10 may have a composition including a thermosetting resin and a thermoplastic resin as resin components, or may have a composition including a thermoplastic resin containing a thermosetting functional group capable of reacting with a hardener to generate a bond as a resin component. In the case where the bonding film 10 has a composition including a thermoplastic resin containing a thermosetting functional group, the bonding film 10 does not need to further include a thermosetting resin. Such bonding film 10 may have a single-layer structure, or may have a multi-layer structure in which the composition is different between adjacent layers.

When the bonding film 10 has a composition including a thermosetting resin and a thermoplastic resin, the thermosetting resin may include, for example, epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, polysilicone resin, and thermosetting polyimide resin. The bonding film 10 may include one thermosetting resin or two or more thermosetting resins. Epoxy resin is preferred as the thermosetting resin in the bonding film 10 because it tends to contain less ionic impurities that may cause corrosion to the semiconductor chip to be bonded. Furthermore, as a hardener for making the epoxy resin exhibit thermosetting properties, a phenol resin is preferably used.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenolethane type, hydantoin type, triglycerol isocyanurate type and glycidylamine type epoxy resins. Phenol novolac type epoxy resin, o-cresol novolac type epoxy resin, biphenyl type epoxy resin, trihydroxyphenylmethane type epoxy resin and tetraphenolethane type epoxy resin are preferably used as the epoxy resin in the adhesive film 10 because they are highly reactive with the phenol resin as a hardener and have excellent heat resistance.

Examples of phenolic resins that can function as hardeners for epoxy resins include novolac-type phenolic resins, soluble novolac-type phenolic resins, and polyhydroxystyrenes such as poly(p-hydroxystyrene). Examples of novolac-type phenolic resins include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, and nonylphenol novolac resins. The adhesive film 10 may include one phenolic resin or two or more phenolic resins as hardeners for epoxy resins. Phenol novolac resin or phenol aralkyl resin is preferably used as a hardener for epoxy resin in the adhesive film 10 because it tends to improve the connection reliability of the adhesive when used as a hardener for epoxy resin used as a die bonding adhesive.

When the adhesive film 10 contains an epoxy resin and a phenol resin as a curing agent, the two resins are mixed in a ratio of preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents of hydroxyl groups in the phenol resin to 1 equivalent of epoxy groups in the epoxy resin. This configuration is preferred in terms of fully carrying out the curing reaction of the epoxy resin and the phenol resin when the adhesive film 10 is cured.

From the viewpoint of appropriately expressing the function as a thermosetting adhesive in the adhesive film 10, the content ratio of the thermosetting resin in the adhesive film 10 is preferably 5 to 60 mass %, and more preferably 10 to 50 mass %.

The thermoplastic resin in the bonding film 10 is responsible for the adhesive function, for example, and when the bonding film 10 has a composition including a thermosetting resin and a thermoplastic resin, the thermoplastic resin may include, for example, acrylic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, Ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, saturated polyester resin such as polyethylene terephthalate or polybutylene terephthalate, polyamide imide resin and fluororesin. The bonding film 10 may include one thermoplastic resin or two or more thermoplastic resins. Acrylic resin is preferred as the thermoplastic resin in the bonding film 10 because it has less ionic impurities and higher heat resistance.

When the adhesive film 10 contains an acrylic resin as the thermoplastic resin, the acrylic polymer of the acrylic resin preferably contains the largest amount of monomer units derived from (meth)acrylate in terms of mass ratio. "(Meth)acrylic acid" means "acrylic acid" and/or "methacrylic acid".

Examples of (meth)acrylates as monomer units for forming the acrylic polymers, i.e., (meth)acrylates as constituent monomers of the acrylic polymers include alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates. Examples of alkyl (meth)acrylates include methyl (meth)acrylates, ethyl (meth)acrylates, propyl (meth)acrylates, isopropyl (meth)acrylates, butyl (meth)acrylates, isobutyl (meth)acrylates, sec-butyl (meth)acrylates, tert-butyl (meth)acrylates, pentyl (meth)acrylates, isopentyl (meth)acrylates, hexyl (meth)acrylates, heptyl (meth)acrylates, octyl (meth)acrylates, 2-ethylhexyl (meth)acrylates, isooctyl (meth)acrylates, nonyl (meth)acrylates, decyl (meth)acrylates, isodecyl (meth)acrylates, undecyl (meth)acrylates, dodecyl (meth)acrylates), tridecyl (meth)acrylates, tetradecyl (meth)acrylates, hexadecyl (meth)acrylates, octadecyl (meth)acrylates, and eicosyl (meth)acrylates. Examples of cycloalkyl (meth)acrylates include cyclopentyl (meth)acrylates and cyclohexyl (meth)acrylates. As the (meth)acrylic acid aryl ester, for example, phenyl (meth)acrylate and benzyl (meth)acrylate can be listed. As the constituent monomer of the acrylic polymer, one (meth)acrylate can be used, or two or more (meth)acrylates can be used. In addition, the acrylic polymer used to form the acrylic resin can be obtained by polymerizing the raw material monomers used to form the acrylic polymer. As the polymerization method, for example, solution polymerization, emulsion polymerization, bulk polymerization and suspension polymerization can be listed.

The acrylic polymer may contain one or more other monomers that can be copolymerized with (meth)acrylate as constituent monomers, for example, in order to improve its cohesive force or heat resistance. Examples of such monomers include carboxyl-containing monomers, acid anhydride monomers, hydroxyl-containing monomers, epoxy-containing monomers, sulfonic acid-containing monomers, phosphoric acid-containing monomers, acrylamide, and acrylonitrile. Examples of carboxyl-containing monomers include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and butenoic acid. Examples of acid anhydride monomers include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (4-hydroxymethylcyclohexyl)methyl (meth)acrylate. Examples of the epoxy group-containing monomer include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamidepropanesulfonic acid, and (meth)acryloyloxynaphthalenesulfonic acid. As the phosphoric acid group-containing monomer, for example, 2-hydroxyethylacryloyl phosphate can be mentioned.

From the viewpoint of achieving higher cohesive force in the adhesive film 10, the acrylic polymer contained in the adhesive film 10 as the acrylic resin is, for example, a copolymer of butyl acrylate, ethyl acrylate and acrylonitrile.

In the case where the bonding film 10 has a composition including a thermoplastic resin containing a thermosetting functional group, as the thermoplastic resin, for example, an acrylic resin containing a thermosetting functional group can be used. The acrylic resin used to form the acrylic resin containing a thermosetting functional group is preferably a monomer unit derived from (meth)acrylate that contains the most monomer units by mass ratio. As such a (meth)acrylate, for example, the (meth)acrylate described above as a constituent monomer of the acrylic polymer that forms the acrylic resin contained in the bonding film 10 can be used. On the other hand, as the thermosetting functional group used to form the acrylic resin containing a thermosetting functional group, for example, a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group can be listed. Among them, a glycidyl group and a carboxyl group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be preferably used. In addition, according to the type of the thermosetting functional group in the thermosetting functional group-containing acrylic resin, a curing agent that can react with the thermosetting functional group is selected. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, as the curing agent, the phenol resin described above as a curing agent for epoxy resin can be used.

In order to achieve a certain degree of crosslinking of the bonding film 10 before hardening for die bonding, for example, it is preferred to mix a multifunctional compound that can react with the functional groups at the molecular chain ends of the above-mentioned resin components contained in the bonding film 10 to produce bonds into the resin composition for bonding film formation as a crosslinking agent. This composition is preferred in terms of improving the bonding properties of the bonding film 10 at high temperatures and seeking to improve the heat resistance. As such a crosslinking agent, for example, polyisocyanate compounds can be listed. As polyisocyanate compounds, for example, toluene diisocyanate, diphenylmethane diisocyanate, terephthalene diisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyols and diisocyanates can be listed. The content of the crosslinking agent in the adhesive film forming resin composition is preferably 0.05 parts by mass or more, and preferably 7 parts by mass or less, based on 100 parts by mass of the resin having the functional group that can react with the crosslinking agent to form a bond, from the viewpoint of improving the cohesive force of the formed adhesive film 10, and from the viewpoint of improving the adhesive force of the formed adhesive film 10. In addition, as the crosslinking agent in the adhesive film 10, other multifunctional compounds such as epoxy resins may be used in combination with polyisocyanate compounds.

The glass transition temperature of the acrylic resin and the thermosetting functional acrylic resin formulated in the bonding film 10 is preferably -40 to 10°C. Regarding the glass transition temperature of the polymer, the glass transition temperature (theoretical value) calculated based on the following Fox formula can be used. Fox's formula is a relationship between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer of each constituent monomer in the polymer. In the following Fox's formula, Tg represents the glass transition temperature of the polymer (°C), Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature of the homopolymer of monomer i (°C). Regarding the glass transition temperature of the homopolymer, the literature value can be used. For example, the glass transition temperatures of various homopolymers are listed in "New Polymer Library 7: Introduction to Synthetic Resins for Coatings" (authored by Kyozo Kitaoka, published by the Polymer Society, 1995) or "Acrylic Esters Catalog (1997 Edition)" (Mitsubishi Rayon Co., Ltd.). In addition, the glass transition temperature of a homopolymer of a monomer can also be obtained by the method specifically described in Japanese Patent Publication No. 2007-51271.

Fox's formula 1/(273＋Tg)＝Σ[Wi/(273＋Tgi)]

The adhesive film 10 may also contain fillers. Adding fillers to the adhesive film 10 is preferred in terms of adjusting the physical properties of the adhesive film 10, such as the breaking strength, breaking elongation, or elastic modulus. As fillers, inorganic fillers and organic fillers can be listed. The fillers can have various shapes such as spheres, needles, and sheets. In addition, the adhesive film 10 can contain one filler or two or more fillers.

Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystalline silicon dioxide, and amorphous silicon dioxide. Examples of the inorganic filler include single metals such as aluminum, gold, silver, copper, and nickel, or alloys, amorphous carbon, and graphite. When the bonding film 10 contains an inorganic filler, the content of the inorganic filler is preferably 10% by mass or more, more preferably 20% by mass or more, and more preferably 30% by mass or more. Moreover, the content is preferably 50 mass % or less, more preferably 45 mass % or less, and even more preferably 40 mass % or less.

Examples of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyamide imide, polyether ether ketone, polyether imide, and polyester imide. When the adhesive film 10 contains the organic filler, the content of the organic filler is preferably 2% by mass or more, more preferably 5% by mass or more, and more preferably 8% by mass or more. Furthermore, the content is preferably 20% by mass or less, more preferably 17% by mass or less, and more preferably 15% by mass or less.

When the adhesive film 10 contains a filler, the average particle size of the filler is preferably 0.005 to 10 μm, more preferably 0.05 to 1 μm. A configuration in which the average particle size of the filler is 0.005 μm or more is preferred in terms of achieving higher wettability or adhesion to an attached object such as a semiconductor wafer in the adhesive film 10. A configuration in which the average particle size of the filler is 10 μm or less is preferred in terms of obtaining a sufficient filler addition effect in the adhesive film 10 and ensuring heat resistance. The average particle size of the filler can be determined, for example, using a brightness type particle size distribution meter (trade name "LA-910", manufactured by Horiba, Ltd.).

The bonding film 10 may also contain a heat-curing catalyst. It is preferable to add a heat-curing catalyst to the bonding film 10 in order to fully carry out the curing reaction of the resin component or to increase the curing reaction speed when the bonding film 10 is cured. Examples of such heat-curing catalysts include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihaloborane compounds. Examples of the imidazole compounds include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'- methylimidazolyl-(1')]-ethyl-s-triatriol, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-triatriol, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triatriol, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triatriol, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triatriol isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Examples of triphenylphosphine compounds include triphenylphosphine, tri(butylphenyl)phosphine, tri(p-methylphenyl)phosphine, tri(nonylphenyl)phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. Triphenylphosphine compounds also include compounds having both a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-tolylborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of amine compounds include monoethanolamine trifluoroborate and dicyanamide. Examples of trihaloborane compounds include trichloroborane. The adhesive film 10 may contain one kind of heat-curing catalyst, or may contain two or more kinds of heat-curing catalysts.

The adhesive film 10 may also contain one or more other components as needed. Examples of the other components include flame retardants, silane coupling agents, and ion scavengers. Examples of flame retardants include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of silane coupling agents include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidyloxypropyltrimethoxysilane, and γ-glycidyloxypropylmethyldiethoxysilane. As ion scavengers, for example, magnesium aluminum carbonates, bismuth hydroxide, hydrated antimony oxide (e.g., "IXE-300" manufactured by Toagosei Co., Ltd.), zirconium phosphate of a specific structure (e.g., "IXE-100" manufactured by Toagosei Co., Ltd.), magnesium silicate (e.g., "Kyowaad 600" manufactured by Kyowa Chemical Co., Ltd.), and aluminum silicate (e.g., "Kyowaad 700" manufactured by Kyowa Chemical Co., Ltd.). Compounds that can form complexes with metal ions can also be used as ion scavengers. As such compounds, for example, triazole compounds, tetrazole compounds, and bipyridine compounds can be listed. Among them, triazole compounds are preferred from the viewpoint of the stability of the complex formed with metal ions. Examples of such triazole compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, carboxybenzotriazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylphenyl)benzotriazole, 2-(2-hydroxy-5-tert-octylphenyl)benzotriazole, 6-(2-benzotriazolyl)benzotriazole, and 1,2,3-di-benzotriazole. -4-tert-octyl-6'-tert-butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2,3-dihydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl)benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-tert-pentyl-6-{(H-benzotriazol-1-yl)methyl}phenol, 2-(2-hydroxy-5-tert-butylphenyl)-2H-benzotriazole, octyl-3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-ethylhexyl-3-[3 -tert-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-tert-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-5-tert-octylphenyl)-benzotriazole, 2-(3-tert-butyl-2-hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-dioctylphenyl)-benzotriazole, -tert-pentylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole, 2-[2-hydroxy-3,5-di(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazol-2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol], 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzotriazole and methyl-3-[3-(2H-benzotriazol-2-yl)-5-tert-butyl-4-hydroxyphenyl]propionate. In addition, specific hydroxyl-containing compounds such as hydroquinone compounds, hydroxyanthraquinone compounds or polyphenol compounds can also be used as ion scavengers. Specifically, such hydroxyl-containing compounds include 1,2-benzenediol, alizarin, anthracenol, tannin, gallic acid, methyl gallate and pyrogallol.

The thickness of the adhesive film 10 is preferably 40 μm or more, more preferably 60 μm or more, and even more preferably 80 μm or more. Furthermore, the thickness of the adhesive film 10 is preferably 150 μm or less, more preferably 140 μm or less, and even more preferably 130 μm or less.

The viscosity of the bonding film 10 at 120°C in an uncured state is preferably 300 Pa·s or more, more preferably 700 Pa·s or more, and more preferably 1000 Pa·s or more. Furthermore, the viscosity of the bonding film 10 at 120°C in an uncured state is preferably 5000 Pa·s or less, more preferably 4500 Pa·s or less, and more preferably 4000 Pa·s or less.

The adhesive film 10 has a breaking strength of 10 MPa or more and/or a breaking elongation of 60% or more in a tensile test conducted on a cured adhesive film specimen with a width of 5 mm under the conditions of an initial chuck distance of 10 mm, 125°C, and a tensile speed of 1 mm/second. The adhesive film 10 or the adhesive film specimen used in the tensile test is cured by heating at 150°C for 1 hour and then heating at 175°C for 1 hour. In addition, the breaking strength of the adhesive film 10 in the tensile test conducted on the cured adhesive film specimen with a width of 5 mm under the above conditions is preferably 13 MPa or more, more preferably 16 MPa or more, more preferably 19 MPa or more, and more preferably 22 MPa or more. The elongation at break of the adhesive film 10 in the tensile test of the adhesive film specimen with a width of 5 mm after hardening under the above conditions is preferably 65% or more, more preferably 70% or more, and more preferably 75% or more. The breaking strength and elongation at break can be measured, for example, using a dynamic viscoelasticity measuring device (trade name "RSA-III", manufactured by TA Instruments). In addition, the adjustment of the breaking strength and elongation at break in the adhesive film 10 can be carried out by controlling the amount of inorganic fillers and/or organic fillers in the adhesive film 10, or controlling the glass transition temperature of the acrylic resin in the adhesive film 10.

The tensile storage modulus of the adhesive film 10 at 125°C obtained by measuring the cured adhesive film specimen with a width of 5 mm under the conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of ±0.5 μm, and a heating rate of 10°C/min is preferably 40 MPa or more, more preferably 50 MPa or more, and more preferably 60 MPa or more. The adhesive film 10 or adhesive film specimen used in this measurement is hardened by heating at 150°C for 1 hour and then heating at 175°C for 1 hour. The tensile storage modulus can be measured, for example, using a dynamic viscoelasticity measuring device (trade name "RSA-III", manufactured by TA Instruments). Furthermore, the adjustment of the tensile storage modulus of elasticity in the bonding film 10 can be performed by controlling the amount of filler in the bonding film 10, etc.

In a peeling test under the conditions of a temperature of 23°C, a peeling angle of 180°, and a tensile speed of 300 mm/min, the adhesive film 10 exhibits a 180° peeling adhesion of 0.3 to 20 N/10 mm to a SUS plane. This structure is preferred in terms of ensuring that the workpiece is held by the adhesive film X with a wafer tape or the adhesive film 10 thereof.

The substrate 21 of the dicing tape 20 in the adhesive film with dicing tape X is an element that functions as a support in the dicing tape 20 or the adhesive film with dicing tape X. The substrate 21 is, for example, a plastic substrate, and a plastic film can be preferably used as the plastic substrate. Examples of the constituent materials of the plastic substrate include polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, aromatic polyamide, fluororesin, cellulose-based resin, and polysilicone resin. Examples of polyolefins include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. Examples of polyesters include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The substrate 21 may include one material or two or more materials. The substrate 21 may have a single-layer structure or a multi-layer structure. When the adhesive layer 22 on the substrate 21 has ultraviolet curability, it is preferred that the substrate 21 has ultraviolet transmittance. Furthermore, when the substrate 21 includes a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film.

When the adhesive film X with a diced ribbon is used, for example, when the diced ribbon 20 or the substrate 21 is shrunk by local heating, it is preferred that the substrate 21 has heat shrinkability. In addition, when the substrate 21 includes a plastic film, when isotropic heat shrinkability is achieved for the diced ribbon 20 or the substrate 21, it is preferred that the substrate 21 is a biaxially stretched film. The heat shrinkage rate of the diced ribbon 20 or the substrate 21 obtained by a heat treatment test under the conditions of a heating temperature of 100° C. and a heat treatment time of 60 seconds is preferably 2 to 30%, more preferably 2 to 25%, more preferably 3 to 20%, and more preferably 5 to 20%. The thermal shrinkage rate refers to at least one of the thermal shrinkage rate in the so-called MD (machine direction) direction and the thermal shrinkage rate in the so-called TD (transverse direction) direction.

The surface of the adhesive layer 22 side of the substrate 21 may be subjected to physical treatment, chemical treatment or primer treatment to improve the adhesion with the adhesive layer 22. Examples of physical treatment include: corona treatment, plasma treatment, frosting treatment, ozone exposure treatment, flame exposure treatment, high-voltage electric shock exposure treatment and ionizing radiation treatment. Examples of chemical treatment include chromic acid treatment.

From the viewpoint of ensuring the strength for the substrate 21 to function as a support in the dicing ribbon 20 or the adhesive film X with dicing ribbon, the thickness of the substrate 21 is preferably 40 μm or more, preferably 50 μm or more, more preferably 55 μm or more, and more preferably 60 μm or more. Furthermore, from the viewpoint of achieving appropriate flexibility in the dicing ribbon 20 or the adhesive film X with dicing ribbon, the thickness of the substrate 21 is preferably 200 μm or less, more preferably 180 μm or less, and more preferably 150 μm or less.

The adhesive layer 22 of the wafer tape 20 contains an adhesive. The adhesive may be an adhesive that can intentionally reduce the adhesive force by external action during the use of the wafer tape adhesive film X (adhesion reducing type adhesive), or an adhesive that has almost or completely no adhesive force reduced by external action during the use of the wafer tape adhesive film X (adhesion non-reducing type adhesive). Whether to use an adhesion reducing type adhesive or an adhesion non-reducing type adhesive as the adhesive in the adhesive layer 22 can be appropriately selected according to the method or conditions for singulating semiconductor chips using the wafer tape adhesive film X, and the use mode of the wafer tape adhesive film X.

When an adhesive with reduced adhesion is used as the adhesive in the adhesive layer 22, during the use of the adhesive film X with a wafer tape, the adhesive layer 22 can be used separately in a state where it exhibits relatively high adhesion and a state where it exhibits relatively low adhesion. For example, when the bonding film X with a wafer tape is used in the following expansion step, the high adhesion state of the adhesive layer 22 is used to suppress and prevent the bonding film 10 from being raised or peeled off from the adhesive layer 22. On the other hand, in the following picking-up step for picking up the semiconductor chip with the bonding film from the wafer tape 20 of the bonding film X with a wafer tape, the low adhesion state of the adhesive layer 22 can be used to easily pick up the semiconductor chip with the bonding film from the adhesive layer 22.

As such an adhesive agent of reduced adhesion, for example, an adhesive agent that can be cured by radiation irradiation during the use of the bonding film X with a wafer tape (radiation-curing adhesive agent) or a heat-foaming adhesive agent can be listed. In the adhesive layer 22 of the present embodiment, one type of adhesive agent of reduced adhesion can be used, or two or more types of adhesive agents of reduced adhesion can be used. In addition, the entire adhesive layer 22 can be formed of an adhesive agent of reduced adhesion, or a part of the adhesive layer 22 can be formed of an adhesive agent of reduced adhesion. For example, when the adhesive layer 22 has a single-layer structure, the entire adhesive layer 22 may be formed of an adhesive with reduced adhesion, or a specific portion of the adhesive layer 22 may be formed of an adhesive with reduced adhesion, and other portions (such as the bonding target region of the annular frame, which is outside the central region) may be formed of an adhesive with non-reduced adhesion. Furthermore, when the adhesive layer 22 has a multi-layer structure, all layers of the multi-layer structure may be formed of an adhesive with reduced adhesion, or a portion of the layers of the multi-layer structure may be formed of an adhesive with reduced adhesion.

As the radiation-curable adhesive used for the adhesive layer 22, for example, there can be cited adhesives of a type that can be cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays or X rays. It is particularly preferable to use an adhesive of a type that can be cured by irradiation with ultraviolet rays (ultraviolet-curable adhesive).

Examples of radiation-curable adhesives used in the adhesive layer 22 include additive-type radiation-curable adhesives containing: a base polymer such as an acrylic polymer as an acrylic adhesive; and a radiation-polymerizable monomer component or oligomer component having a radiation-polymerizable carbon-carbon double bond or other functional group.

The acrylic polymer as the base polymer of the radiation-curable adhesive preferably contains the largest number of monomer units derived from (meth)acrylates in terms of mass ratio. As the (meth)acrylates used to form the monomer units of the acrylic polymer, that is, as the (meth)acrylates used as the constituent monomers of the acrylic polymer, for example, there can be listed: (meth)acrylate alkyl esters, (meth)acrylate cycloalkyl esters, and (meth)acrylate aryl esters. As the (meth)acrylates, more specifically, there can be listed the (meth)acrylates described above as the constituent monomers of the acrylic polymer used to form the acrylic resin for the bonding film 10. As the constituent monomers of the acrylic polymer, one (meth)acrylate can be used, and two or more (meth)acrylates can also be used. As the constituent monomers of the acrylic polymer, 2-ethylhexyl acrylate and lauryl acrylate are preferably listed. In addition, when the adhesive layer 22 appropriately exhibits basic properties such as adhesiveness brought by (meth)acrylate, the ratio of (meth)acrylate in the entire monomers constituting the acrylic polymer is preferably 40 mass % or more, and more preferably 60 mass % or more.

For example, in order to improve its cohesive force or heat resistance, the acrylic polymer may contain one or more other monomers that can be copolymerized with (meth)acrylate in the constituent monomers. Examples of such other monomers include: carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile. More specifically, the other monomers may include the copolymerizable other monomers described above as constituent monomers of the acrylic polymer for forming the acrylic resin for the bonding film 10.

In order to form a cross-linked structure in the polymer backbone, the acrylic polymer may include monomer units derived from a multifunctional monomer that can be copolymerized with a monomer component such as (meth)acrylate. Examples of such multifunctional monomers include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trihydroxymethylpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, poly(meth)acrylate glycidyl, polyester (meth)acrylate, and (meth)acrylate urethane. "(Meth)acrylate" means "acrylate" and/or "methacrylate". As the constituent monomer of the acrylic polymer, one kind of multifunctional monomer may be used, or two or more kinds of multifunctional monomers may be used. When the adhesive layer 22 appropriately exhibits the basic properties such as adhesion brought by (meth)acrylate, the ratio of the multifunctional monomer in the entire constituent monomer of the acrylic polymer is preferably 40% by mass or less, and more preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing the raw material monomers used to form the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the perspective of high cleanliness in the semiconductor device manufacturing method using the dicing tape 20 or the adhesive film X with the dicing tape, it is preferred that the adhesive layer 22 in the dicing tape 20 or the adhesive film X with the dicing tape has fewer low molecular weight components, and the number average molecular weight of the acrylic polymer is preferably 100,000 or more, and more preferably 200,000 to 3,000,000.

The adhesive layer 22 or the adhesive used to form it may contain an external crosslinking agent, for example, in order to increase the number average molecular weight of the base polymer such as acrylic polymer. Examples of the external crosslinking agent used to react with the base polymer such as acrylic polymer to form a crosslinked structure include: polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds and melamine-based crosslinking agents. The content of the external crosslinking agent in the adhesive layer 22 or the adhesive used to form it is preferably 5 parts by mass or less, and more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component used to form the radiation-curable adhesive include trihydroxymethylpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate. Examples of the radiation-polymerizable oligomer component used to form the radiation-curable adhesive include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and oligomers having a molecular weight of about 100 to 30,000 are more suitable. The total content of the radiation-polymerizable monomer component or oligomer component in the radiation-curable adhesive is determined within a range that can appropriately reduce the adhesive force of the formed adhesive layer 22, and is preferably 5 to 500 parts by mass, more preferably 40 to 150 parts by mass, relative to 100 parts by mass of the base polymer such as the acrylic polymer. In addition, as an additive-type radiation-curable adhesive, for example, the one disclosed in Japanese Patent Laid-Open No. 60-196956 can be used.

As the radiation-curable adhesive used for the adhesive layer 22, for example, there can be mentioned an intrinsic radiation-curable adhesive of a base polymer containing a functional group such as a radiation-polymerizable carbon-carbon double bond in the polymer side chain, the polymer main chain, or at the end of the polymer main chain. Such an intrinsic radiation-curable adhesive is preferred in terms of suppressing unintentional changes in adhesive properties over time caused by the migration of low molecular weight components in the formed adhesive layer 22.

The base polymer contained in the intrinsic radiation-curable adhesive preferably has an acrylic polymer as a basic skeleton. The acrylic polymer forming such a basic skeleton may be the acrylic polymer described above as the base polymer contained in the additive radiation-curable adhesive. As a method for introducing radiation-polymerizable carbon-carbon double bonds into an acrylic polymer, for example, the following method can be cited: after copolymerizing a raw material monomer including a monomer having a specific functional group (first functional group) to obtain an acrylic polymer, while maintaining the radiation-polymerizable carbon-carbon double bond, a compound having a specific functional group (second functional group) that can react with the first functional group to form a bond and a radiation-polymerizable carbon-carbon double bond is subjected to a condensation reaction or an addition reaction with the acrylic polymer.

As the combination of the first functional group and the second functional group, for example, there can be listed: carboxyl and epoxy, epoxy and carboxyl, carboxyl and aziridine, aziridine and carboxyl, hydroxyl and isocyanate, isocyanate and hydroxyl. Among these combinations, from the perspective of easy reaction tracking, the combination of hydroxyl and isocyanate, or the combination of isocyanate and hydroxyl is preferred. In addition, since the production of a polymer having a highly reactive isocyanate is technically difficult, from the perspective of easy production or acquisition of an acrylic polymer, it is more preferred that the first functional group on the acrylic polymer side is a hydroxyl and the second functional group is an isocyanate. Examples of the isocyanate compound having both a radiation polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, an isocyanate compound containing a radiation polymerizable unsaturated functional group include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate (MOI) and m-isopropenyl-α,α-dimethylbenzyl isocyanate.

The radiation-curable adhesive used for the adhesive layer 22 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, 9-oxysulfide compounds, Series compounds, camphorquinone, halogenated ketones, acylphosphine oxides and acyl phosphates. Examples of α-ketoalcohol series compounds include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone and 1-hydroxycyclohexylphenylketone. Examples of acetophenone series compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone and 2-methyl-1-[4-(methylthio)-phenyl]-2-oxo-1-ol-1-propane. Examples of benzoin ether series compounds include benzoin ethyl ether, benzoin isopropyl ether and anisole methyl ether. Examples of ketal compounds include benzyl dimethyl ketal. Examples of aromatic sulfonyl chloride compounds include 2-naphthalenesulfonyl chloride. Examples of photoactive oxime compounds include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Examples of benzophenone compounds include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Examples of 9-oxysulfuryl compounds include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Compounds such as 9-oxosulfur , 2-chloro-9-oxysulfuron , 2-methyl 9-oxosulfuron , 2,4-dimethyl 9-oxosulfuron 、Isopropyl 9-oxysulfide , 2,4-dichloro-9-oxysulfuron , 2,4-diethyl 9-oxysulfide and 2,4-diisopropyl 9-oxysulfide The content of the photopolymerization initiator in the radiation-curable adhesive in the adhesive layer 22 is, for example, 0.05 to 20 parts by mass relative to 100 parts by mass of the base polymer such as the acrylic polymer.

The heat-expandable adhesive in the adhesive layer 22 is an adhesive containing a component that foams or expands when heated. Examples of the component that foams or expands when heated include a foaming agent and heat-expandable microspheres.

As the foaming agent for the heat-foaming adhesive, various inorganic foaming agents and organic foaming agents can be listed. As the inorganic foaming agent, for example, ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride and azides can be listed. As the organic foaming agent, for example, chlorofluorinated alkanes such as trichloromonofluoromethane or dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide or barium azodicarboxylate; hydrazine compounds such as p-toluenesulfonylhydrazine, diphenylsulfonium-3,3'-disulfonylhydrazine, 4,4'-oxybis(benzenesulfonylhydrazine) or allylbis(sulfonylhydrazine); -1,2-phenylethylenesulfonyl semihydrazide or 4,4'-oxybis(phenylsulfonyl semihydrazide) and other semihydrazide compounds; 5-thiophene-1,2,3,4-thiatriazole and other triazole compounds; and N,N'-dinitrosopentamethylenetetramine or N,N'-dimethyl-N,N'-dinitrosoterephthalamide and other N-nitroso compounds.

As heat-expandable microspheres for heat-expandable adhesives, for example, microspheres are formed by enclosing a substance that easily expands by gasification when heated into a shell. Examples of substances that easily expand by gasification when heated include isobutane, propane, and pentane. Heat-expandable microspheres can be produced by enclosing a substance that easily expands by gasification when heated into a shell-forming substance using a coagulation method or an interfacial polymerization method. As the shell-forming substance, a substance that exhibits heat melting properties or a substance that can be broken by the action of thermal expansion of the enclosed substance can be used. As such a substance, for example, vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride and polysulfone can be cited.

As the above-mentioned adhesive of non-reduced adhesive force in the adhesive layer 22, for example, a pressure-sensitive adhesive can be cited. As the pressure-sensitive adhesive, for example, an acrylic adhesive or a rubber adhesive using an acrylic polymer as a base polymer can be used. In the case where the adhesive layer 22 contains an acrylic adhesive as a pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic adhesive preferably contains a monomer unit derived from (meth)acrylate as the largest monomer unit in terms of mass ratio. As such an acrylic polymer, for example, the acrylic polymer described above with respect to the radiation-curable adhesive can be cited.

As the pressure-sensitive adhesive in the adhesive layer 22, an adhesive in the form of a radiation-curing adhesive hardened by radiation irradiation as described above with respect to the adhesive force reduction type adhesive can be used. Even if the adhesive force of such a hardened radiation-curing type adhesive is reduced by radiation irradiation, the adhesiveness brought by the polymer component can be exhibited according to the content of the polymer component, and the adhesive force can be used to adhere and retain the attached object in a specific usage mode.

In the adhesive layer 22 of the present embodiment, one adhesive of non-reducing adhesion type may be used, or two or more adhesives of non-reducing adhesion type may be used. Furthermore, the entire adhesive layer 22 may be formed of an adhesive of non-reducing adhesion type, or a portion of the adhesive layer 22 may be formed of an adhesive of non-reducing adhesion type. For example, when the adhesive layer 22 has a single-layer structure, the entire adhesive layer 22 may be formed of an adhesive of non-reducing adhesion type, or a specific portion of the adhesive layer 22 may be formed of an adhesive of non-reducing adhesion type, and the other portions may be formed of an adhesive of reducing adhesion type. Furthermore, when the adhesive layer 22 has a laminated structure, all layers of the laminated structure may be formed of an adhesive of a non-adhesion-reducing type, or a part of the layers of the laminated structure may be formed of an adhesive of a non-adhesion-reducing type.

The adhesive layer 22 or the adhesive used to form it may contain a crosslinking promoter, an adhesion imparting agent, an anti-aging agent or a coloring agent in addition to the above-mentioned components. Examples of the coloring agent include pigments and dyes. In addition, the coloring agent may be a compound that is colored by radiation. Examples of such compounds include stealth dyes.

The thickness of the adhesive layer 22 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and even more preferably 5 to 25 μm. This configuration is preferred in terms of maintaining a balance in the adhesive force of the adhesive layer 22 to the adhesive film 10 before and after radiation curing, for example, when the adhesive layer 22 includes a radiation curable adhesive.

The bonding film X with a dicing ribbon having the above-described structure can be manufactured, for example, in the following manner.

In the preparation of the adhesive film 10 of the adhesive film X with a wafer cutting tape, first, after preparing an adhesive composition for forming the adhesive film 10, the composition is applied on a specific isolation film to form an adhesive composition layer. Examples of isolation films include polyethylene terephthalate (PET) films, polyethylene films, polypropylene films, and plastic films or papers coated with a stripping agent such as a fluorine-based stripping agent or a long-chain alkyl acrylate-based stripping agent. Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating. Next, the adhesive composition layer is dried or cross-linked by heating as required. The heating temperature is, for example, 70 to 160° C. and the heating time is, for example, 1 to 5 minutes. In the above manner, the adhesive film 10 can be manufactured in the form of an accompanying isolation film.

The wafer tape 20 with the wafer tape bonding film X can be produced by providing an adhesive layer 22 on a prepared substrate 21. For example, the resin substrate 21 can be produced by a film-making method such as a rolling film-making method, a casting method in an organic solvent, or a blown extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, etc. The film or substrate 21 after film-making is subjected to a specific surface treatment as needed. In the formation of the adhesive layer 22, for example, after preparing an adhesive composition for forming the adhesive layer, the composition is first applied to the substrate 21 or a specific isolation film to form an adhesive composition layer. As the coating method of the adhesive composition, for example, there can be listed: roller coating, screen coating and gravure coating. Next, the adhesive composition layer is dried or cross-linked as needed by heating. The heating temperature is, for example, 80 to 150°C, and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 22 is formed on the isolation film, the adhesive layer 22 accompanied by the isolation film is adhered to the substrate 21, and then the isolation film is peeled off from the adhesive layer 22. In this way, the above-mentioned wafer-cutting ribbon 20 having a layered structure of the substrate 21 and the adhesive layer 22 is produced.

In the production of the adhesive film X with the wafer tape, the adhesive film 10 is then bonded to the adhesive layer 22 side of the wafer tape 20, for example, by pressing. The bonding temperature is, for example, 30 to 50°C, preferably 35 to 45°C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm, preferably 1 to 10 kgf/cm. When the adhesive layer 22 includes the radiation-curing adhesive as described above, the adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, and may be irradiated with radiation such as ultraviolet rays from the side of the substrate 21 after the bonding. Alternatively, such radiation irradiation may not be performed during the manufacturing process of the adhesive film X with a wafer tape (in this case, the adhesive layer 22 may be radiation-cured during the use of the adhesive film X with a wafer tape). When the adhesive layer 22 has ultraviolet curability, the ultraviolet irradiation amount used to cure the adhesive layer 22 is, for example, 50 to 500 mJ/ ^cm2 , preferably 100 to 300 mJ/ ^cm2 . As shown in FIG1, the area (irradiation area R) of the adhesive film X with a wafer tape to be irradiated as a measure to reduce the adhesion of the adhesive layer 22 is, for example, the area of the adhesive film bonding area in the adhesive layer 22 except for its peripheral portion.

The bonding film X with a wafer tape attached can be manufactured in the above manner. An isolation film (not shown) can be provided on the bonding film 10 side of the bonding film X with a wafer tape attached in a form of at least covering the bonding film 10. When the bonding film 10 is smaller than the adhesive layer 22 of the wafer tape 20 and there is a region in the adhesive layer 22 that is not attached to the bonding film 10, for example, an isolation film can be provided in a form of at least covering the bonding film 10 and the adhesive layer 22. The isolation film is used to protect the bonding film 10 or the adhesive layer 22 from being exposed to the device, and is peeled off from the bonding film X with a wafer tape attached when the bonding film X with a wafer tape is used.

2 to 4 show a method for manufacturing a semiconductor device using a bonding film X with a wafer ribbon.

In this method, first, as shown in FIG. 2( a ), a semiconductor wafer 30 is bonded to the bonding film 10 of the bonding film X with a wafer cutting tape. Various semiconductor elements (not shown) have been fabricated on one side of the semiconductor wafer 30, and wiring structures (not shown) required for the semiconductor elements have been formed on the single side. In this step, the semiconductor wafer 30 is pressed against the bonding film X with a wafer cutting tape by a press roller or the like, so that, for example, the back side of the semiconductor wafer 30 is bonded to the bonding film 10 of the bonding film X with a wafer cutting tape.

Next, as shown in FIG. 2( b ), the semiconductor wafer 30 is diced (blade cutting step). Specifically, while the semiconductor wafer 30 is held on the bonding film X with a dicing tape, the semiconductor wafer 30 and the bonding film 10 are cut using a rotating blade of a dicing device or the like to be singulated into semiconductor chip units (the cutting portion is schematically indicated by a thick solid line in the figure). Thus, a semiconductor chip 31 is formed with the bonding film 11 of the chip size.

When the adhesive layer 22 in the adhesive film with dicing tape X is a radiation-curable adhesive layer, the adhesive layer 22 may be irradiated with radiation such as ultraviolet light from the side of the substrate 21 as a measure to reduce adhesion before or after the blade cutting step, instead of the above-mentioned radiation irradiation in the manufacturing process of the adhesive film with dicing tape X. When the radiation irradiation is ultraviolet light irradiation, the irradiation amount is, for example, 50 to 500 mJ/cm ² , preferably 100 to 300 mJ/cm ² . The area of the adhesive film X with a wafer tape to which radiation is irradiated as a measure to reduce the adhesion of the adhesive layer 22 (indicated as an irradiated area R in FIG. 1 ) is, for example, the area of the adhesive film laminating area in the adhesive layer 22 excluding the peripheral portion thereof.

Furthermore, after a cleaning step of washing the wafer ribbon 20 with the semiconductor wafer 31 with the adhesive film attached thereto using a cleaning liquid such as water as needed, the semiconductor wafer 31 with the adhesive film attached thereto is picked up from the wafer ribbon 20 (pick-up step). For example, a pin member (not shown) of a pickup mechanism located at the lower side of the wafer ribbon 20 in the figure is raised, and the semiconductor wafer 31 with the adhesive film attached thereto to be picked up is lifted up through the wafer ribbon 20, and then held by an adsorption jig (not shown).

Next, as shown in FIG. 3(a) and FIG. 3(b), the semiconductor chip 31 with the bonding film is pre-bonded on the mounting substrate 51 (pre-bonding step). The pre-bonding is performed in a manner that the semiconductor chip C on the mounting substrate 51 is embedded in the bonding film 11 accompanying the semiconductor chip 31. Examples of the mounting substrate 51 include: a lead frame, a TAB (Tape Automated Bonding) film, and a wiring substrate. The semiconductor chip C is fixed to the mounting substrate 51, such as a controller chip, via a bonding layer 52, and the semiconductor chip 31 disposed on the semiconductor chip C is, for example, various memory chips. The electrode pad (not shown) of the semiconductor chip C is electrically connected to the terminal portion (not shown) of the mounting substrate 51 via a bonding wire 53. As the bonding wire 53, for example, a gold wire, an aluminum wire, or a copper wire can be used. In this step, the semiconductor chip C mounted by wire bonding and the bonding wire 53 connected thereto are embedded in the bonding film 11 accompanying the semiconductor chip 31. In addition, in this step, in order to set the semiconductor chip C and the bonding wire 53 to be easily pushed into the bonding film 11, the bonding film 11 can be heated to soften it. The heating temperature is a temperature at which the bonding film 11 does not become a completely heat-hardened state, for example, 80 to 140°C.

Next, as shown in FIG. 3( c ), the bonding film 11 is hardened by heating (thermal hardening step). In this step, the heating temperature is, for example, 100 to 200° C., and the heating time is, for example, 0.5 to 10 hours. By going through this step, a bonding layer formed by thermally hardening the bonding film 11 is formed. The bonding layer buries the semiconductor chip C (first semiconductor chip) mounted on the mounting substrate 51 by wire bonding and the bonding wire 53 connected thereto, and bonds the semiconductor chip 31 (second semiconductor chip) to the mounting substrate 51.

Next, as shown in FIG. 4( a ), the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the mounting substrate 51 are electrically connected via the bonding wire 53 (wire bonding step). The connection between the electrode pad of the semiconductor chip 31 and the bonding wire 53, and the connection between the terminal portion of the mounting substrate 51 and the bonding wire 53 are achieved by ultrasonic welding accompanied by heating. The wire heating temperature in wire bonding is, for example, 80 to 250° C., and the heating time is, for example, several seconds to several minutes. This wire bonding step can be performed before the above-mentioned thermal curing step.

Next, as shown in FIG. 4( b ), a sealing resin 54 is formed to seal the semiconductor chip 31 and the like mounted on the substrate 51 (sealing step). In this step, the sealing resin 54 is formed, for example, by a transfer molding technique using a mold. As a constituent material of the sealing resin 54, for example, an epoxy resin can be cited. In this step, the heating temperature for forming the sealing resin 54 is, for example, 165 to 185° C., and the heating time is, for example, 60 seconds to several minutes. In the case where the sealing resin 54 is not sufficiently hardened in this step, a post-hardening step is performed after this step to completely harden the sealing resin 54 by further heat treatment. In the post-curing step, the heating temperature is, for example, 165-185° C., and the heating time is, for example, 0.5-8 hours. Even if the bonding film 11 is not completely thermally cured in the step described above with reference to FIG. 3( c ), the bonding film 11 can be completely thermally cured together with the sealing resin 54 in the sealing step or the post-curing step.

In the above manner, a semiconductor device having multiple semiconductor chips mounted thereon can be manufactured.

When obtaining a semiconductor wafer with an adhesive film by using the adhesive film X with a dicing tape, the process including the steps shown in FIG. 5 to FIG. 9 may be performed. Specifically, it is as follows.

First, as shown in FIG. 5(a) and FIG. 5(b), a dividing groove 30a is formed on the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown in the figure) have been manufactured on the side of the first surface Wa in the semiconductor wafer W, and the wiring structure (not shown in the figure) required for the semiconductor element has been formed on the first surface Wa. In this step, after the wafer processing tape T1 having an adhesive surface T1a is attached to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is kept on the wafer processing tape T1, and a dividing groove 30a of a specific depth is formed on the first surface Wa side of the semiconductor wafer W using a rotating blade of a wafer cutting device or the like. The dividing grooves 30a are gaps for separating the semiconductor wafer W into semiconductor chip units (in FIGS. 5 to 7 , the dividing grooves 30a are schematically indicated by thick solid lines).

Next, as shown in FIG. 5( c ), the wafer processing tape T2 having the adhesive surface T2 a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is peeled off from the semiconductor wafer W.

Next, as shown in FIG. 5( d ), while the semiconductor wafer W is held on the wafer processing tape T2 , the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a specific thickness (wafer thinning step). The grinding process can be performed using a grinding device equipped with a grinding stone. By the wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips 31 is formed. Specifically, the semiconductor wafer 30A has a portion (connecting portion) on the second surface Wb side that connects the portions of the wafer that are singulated into a plurality of semiconductor chips 31 . The thickness of the connecting portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the front end of the second surface Wb side of the dividing groove 30a, is, for example, 1 to 30 μm, preferably 3 to 20 μm.

Next, as shown in FIG6(a), the semiconductor wafer 30A held by the wafer processing tape T2 is bonded to the bonding film 10 of the bonding film with dicing tape X. Thereafter, as shown in FIG6(b), the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. In the case where the adhesive layer 22 in the bonding film with dicing tape X is a radiation-curing adhesive layer, after the semiconductor wafer 30A is bonded to the bonding film 10, the adhesive layer 22 may be irradiated with radiation such as ultraviolet light from the side of the substrate 21 as a measure to reduce adhesion, instead of the above-mentioned radiation irradiation in the manufacturing process of the bonding film with dicing tape X. When the radiation irradiation is ultraviolet irradiation, the irradiation amount is, for example, 50 to 500 mJ/cm ² , preferably 100 to 300 mJ/cm ² . The irradiated area (irradiated area R shown in FIG. 1 ) in the adhesive film X with a wafer tape as a measure for reducing the adhesion of the adhesive layer 22 is, for example, the area of the adhesive film 10 bonding area in the adhesive layer 22 excluding the peripheral portion thereof.

Next, after the ring frame 41 is attached to the bonding film 10 in the bonding film with dicing tape X, as shown in FIG. 7(a), the bonding film with dicing tape X along with the semiconductor wafer 30A is fixed to a holder 42 of the expansion device.

Next, as shown in FIG. 7( b ), the first expansion step (cold expansion step) is performed under relatively low temperature conditions, the semiconductor wafer 30A is singulated into a plurality of semiconductor chips 31, and the bonding film 10 of the bonding film X with a dicing tape is cut into small pieces of bonding film 11, thereby obtaining semiconductor chips with a bonding film 31. In this step, the hollow cylindrical top member 43 provided in the expansion device abuts against the dicing tape 20 at the lower side of the bonding film X with a dicing tape in the figure and rises, and the dicing tape 20 with the bonding film X with a dicing tape attached to the semiconductor wafer 30A is expanded in a manner that it is stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. The expansion is performed under conditions such as generating a tensile stress of 15 to 32 MPa in the cut ribbon 20. The temperature conditions in the cold expansion step are, for example, below 0°C, preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed (the speed at which the lifting member 43 rises) in the cold expansion step is, for example, 0.1 to 100 mm/sec. In addition, the expansion amount in the cold expansion step is, for example, 3 to 16 mm.

In this step, the semiconductor wafer 30A is cut at the portion that is easily broken due to the thin wall, resulting in the singulation of the semiconductor chips 31. At the same time, in this step, the adhesive film 10 that is in close contact with the adhesive layer 22 of the expanded dicing tape 20 is suppressed from deformation in each region that is in close contact with each semiconductor chip 31. On the other hand, in a state where such deformation suppression effect is not produced, the tensile stress generated by the dicing tape 20 acts on the portion opposite to the dividing groove between the semiconductor chips 31. As a result, the portion opposite to the dividing groove between the semiconductor chips 31 in the adhesive film 10 is cut. After this step, as shown in FIG. 7(c), the lifting member 43 descends, releasing the expanded state in the dicing tape 20.

Next, as shown in FIG8(a), the second expansion step is performed under relatively high temperature conditions to expand the distance (interval distance) between the semiconductor chips 31 with the bonding film. In this step, the hollow cylindrical top member 43 of the expansion device rises again to expand the wafer tape 20 with the bonding film X of the wafer tape. The temperature condition in the second expansion step is, for example, above 10°C, preferably 15 to 30°C. The expansion speed in the second expansion step (the speed at which the top member 43 rises) is, for example, 0.1 to 10 mm/second. In addition, the expansion amount in the second expansion step is, for example, 3 to 16 mm. In this step, the spacing distance of the semiconductor chips 31 with the adhesive film is expanded to the extent that the semiconductor chips 31 with the adhesive film can be properly picked up from the wafer ribbon 20 in the following picking-up step. After this step, as shown in FIG. 8( b ), the lifting member 43 is lowered to release the expanded state in the wafer ribbon 20. When the spacing distance of the semiconductor chips 31 with the adhesive film on the wafer ribbon 20 is suppressed from narrowing after the expansion state is released, it is preferred to heat and shrink the portion of the wafer ribbon 20 outside the semiconductor chip 31 holding area before releasing the expansion state.

Next, after the wafer tape 20 with the semiconductor wafer 31 attached with the adhesive film is cleaned with a cleaning liquid such as water as needed, the semiconductor wafer 31 with the adhesive film is picked up from the wafer tape 20 as shown in FIG. 9 (pick-up step). For example, the pin member 44 of the pick-up mechanism located at the lower side of the wafer tape 20 in the figure is raised, and the semiconductor wafer 31 with the adhesive film to be picked up is lifted up through the wafer tape 20, and then held by the adsorption jig 45. In the pick-up step, the lifting speed of the pin member 44 is, for example, 1 to 100 mm/sec, and the lifting amount of the pin member 44 is, for example, 50 to 3000 μm. The semiconductor wafer 31 with the adhesive film picked up in this way is provided for the mounting step in the semiconductor device manufacturing process.

In the semiconductor device manufacturing method using the bonding film X with a wafer cutting tape, the wafer thinning step shown in FIG. 10 can be performed instead of the wafer thinning step described above with reference to FIG. 5(d). After the process described above with reference to FIG. 5(c), in the wafer thinning step shown in FIG. 10, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a specific thickness while being held on the wafer processing tape T2, thereby forming a semiconductor wafer divided body 30B including a plurality of semiconductor chips 31 and held on the wafer processing tape T2. In this step, a method of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side (first method) may be adopted, or a method of grinding the wafer from the second surface Wb side to before reaching the dividing groove 30a, and then by the action of pressing the wafer with a self-rotating grindstone, a crack is generated between the dividing groove 30a and the second surface Wb to form the semiconductor wafer divided body 30B (second method) may be adopted. According to the method adopted, the depth of the dividing groove 30a formed as described above with reference to Figures 5(a) and 5(b) from the first surface Wa is appropriately determined. In Figure 10, the dividing groove 30a through the first method or the dividing groove 30a through the second method and the crack connected thereto are schematically represented by thick solid lines. When the semiconductor chip 31 with the bonding film is obtained, the semiconductor wafer segment 30B thus manufactured can be attached to the bonding film X with the dicing tape instead of the semiconductor wafer 30A, and then the above steps can be performed with reference to FIGS. 7 to 9.

FIG. 11( a) and FIG. 11( b) specifically show the first expansion step (cold expansion step) performed after the semiconductor wafer segment 30B is bonded to the bonding film X with a dicing tape. In this step, the hollow cylindrical top member 43 provided in the expansion device abuts against the dicing tape 20 at the lower side of the bonding film X with a dicing tape in the figure and rises, and the dicing tape 20 with the bonding film X with a dicing tape bonded to the semiconductor wafer segment 30B is expanded in a manner that the dicing tape 20 is stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer segment 30B. The expansion is performed under the condition that a tensile stress of, for example, 1 to 100 MPa is generated in the dicing tape 20. The temperature condition in this step is, for example, below 0°C, preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed in this step (the speed at which the lifting member 43 rises) is, for example, 1 to 500 mm/sec. Moreover, the expansion amount in this step is, for example, 50 to 200 mm. By this cold expansion step, the bonding film 10 with the bonding film X attached with the wafer cutting tape is cut into small pieces of bonding film 11 to obtain a semiconductor chip 31 with a bonding film attached. Specifically, in this step, in the adhesive film 10 that is in close contact with the adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each region that is in close contact with each semiconductor chip 31 of the semiconductor wafer segment 30B, and on the other hand, in a state where such deformation suppression effect is not produced, the tensile stress generated by the dicing tape 20 acts on the portion opposite to the dividing groove 30a between the semiconductor chips 31. As a result, the portion opposite to the dividing groove 30a between the semiconductor chips 31 in the adhesive film 10 is cut. The semiconductor chip 31 with the adhesive film obtained in this way is provided for the mounting step in the semiconductor device manufacturing process after the pick-up step described above with reference to FIG. 9.

In the method for manufacturing a semiconductor device using the bonding film X with a dicing tape, a semiconductor wafer 30C manufactured as follows may be bonded to the bonding film X with a dicing tape instead of the semiconductor wafer 30, the semiconductor wafer 30A, or the semiconductor wafer divided body 30B.

In the production of the semiconductor wafer 30C, first, as shown in FIG. 12(a) and FIG. 12(b), a modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been produced on the side of the first surface Wa of the semiconductor wafer W, and wiring structures (not shown) required for the semiconductor elements have been formed on the first surface Wa. In this step, after the wafer processing tape T3 having the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is irradiated with laser light with the focal point aligned with the inside of the wafer from the side opposite to the wafer processing tape T3 along the predetermined dividing line, while the semiconductor wafer W is held on the wafer processing tape T3, and the modified region 30b is formed in the semiconductor wafer W by using the etching caused by multiphoton absorption. The modified region 30b is used to separate the semiconductor wafer W into the brittle region of the semiconductor chip unit. The method of forming the modified region 30b on the predetermined division line in the semiconductor wafer by laser irradiation is described in detail in, for example, Japanese Patent Publication No. 2002-192370. In this method, the laser irradiation conditions in this embodiment are appropriately adjusted within the range of the following conditions.

Laser irradiation conditions (A) Laser light source Semiconductor laser Nd: YAG (Neodymium-doped Yttrium Aluminum Garnet) Laser wavelength 1064 nm Laser spot cross-sectional area 3.14×10 ^-8 cm ² Oscillation form Q switch Pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00 Polarization characteristics Linear polarization (B) Focusing lens magnification 100 times or less NA (Numerical Aperture) 0.55 Transmittance to laser light wavelength 100% or less (C) Moving speed of the stage for mounting semiconductor substrate 280 mm/s or less

Next, while the semiconductor wafer W is held on the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a specific thickness, as shown in FIG. 12(c), to form a semiconductor wafer 30C that can be singulated into a plurality of semiconductor chips 31 (wafer thinning step). When the semiconductor chip 31 with the bonding film is obtained, the semiconductor wafer 30C manufactured in the above manner can be attached to the bonding film X with the dicing tape instead of the semiconductor wafer 30A, and the above steps can be performed with reference to FIGS. 7 to 9.

FIG. 13( a) and FIG. 13( b) specifically show the first expansion step (cold expansion step) performed after the semiconductor wafer 30C is bonded to the bonding film X with a dicing tape. In this step, the hollow cylindrical top member 43 provided in the expansion device abuts against the dicing tape 20 at the lower side of the bonding film X with a dicing tape in the figure and rises, and the dicing tape 20 with the bonding film X with a dicing tape bonded to the semiconductor wafer 30C is expanded in a manner that the dicing tape 20 is stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30C. The expansion is performed under the condition that a tensile stress of, for example, 1 to 100 MPa is generated in the dicing tape 20. The temperature condition in this step is, for example, below 0°C, preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed in this step (the speed at which the lifting member 43 rises) is, for example, 1 to 500 mm/sec. Furthermore, the expansion amount in this step is, for example, 50 to 200 mm. By means of such a cold expansion step, the bonding film 10 of the bonding film X with the wafer cutting tape is cut into small pieces of bonding film 11 to obtain a semiconductor chip 31 with a bonding film. Specifically, in this step, cracks are formed in the brittle modified region 30b in the semiconductor wafer 30C, causing singulation into the semiconductor chip 31. At the same time, in this step, in the adhesive film 10 that is in close contact with the adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each area that is in close contact with each semiconductor chip 31 of the semiconductor wafer 30C, and on the other hand, in a state where such deformation suppression effect is not produced, the tensile stress generated by the dicing tape 20 acts on the portion opposite to the crack formation portion of the wafer. As a result, the portion opposite to the crack formation portion between the semiconductor chips 31 in the adhesive film 10 is cut off. The semiconductor chip 31 with the adhesive film obtained in this way is provided for the mounting step in the semiconductor device manufacturing process after the picking-up step described above with reference to FIG. 9.

In the semiconductor device shown in FIG. 4( b ), the semiconductor chip C and the bonding wire 53 connected thereto are entirely embedded in the bonding layer formed by hardening the bonding film 11. Alternatively, the semiconductor chip C and a portion of the semiconductor chip C side of the bonding wire 53 connected thereto may be embedded in the bonding layer formed by hardening the bonding film 11. When manufacturing a semiconductor device of this structure, a bonding film X with a wafer cutting tape may also be used.

In the semiconductor device of the manufacturing target, as shown in FIG. 14, for example, a semiconductor chip C for flip-chip mounting can be used instead of a semiconductor chip C for wire bonding mounting. The semiconductor chip C shown in FIG. 14 is electrically connected to the mounting substrate 51 via a bump 55, and a bottom filler 56 is filled between the semiconductor chip C and the mounting substrate 51 and thermally cured. In the semiconductor device shown in FIG. 14, the semiconductor chip C (the first semiconductor chip) for flip-chip mounting on the mounting substrate 51 is embedded in the bonding layer formed by thermally curing the bonding film 11, and the semiconductor chip 31 (the second semiconductor chip) is bonded to the mounting substrate 51. When manufacturing a semiconductor device of this structure, a bonding film X with a wafer cutting tape can also be used.

In the above semiconductor device manufacturing method, after the pre-fixing step described above with reference to FIG. 3(a) and FIG. 3(b) or the heat curing step described above with reference to FIG. 3(c), a specific number of semiconductor chips with bonding layers are sequentially bonded and stacked on the semiconductor chip 31, and the electrode pads of each semiconductor chip including the semiconductor chip 31 are wire-bonded to the terminal portion of the mounting substrate 51, and then a sealing step is performed for resin-sealing all the semiconductor chips on the mounting substrate 51. An example of a semiconductor device manufactured through such a process is shown in FIG. 15.

In the semiconductor device shown in FIG. 15 , the semiconductor chip C is embedded in an adhesive layer formed by hardening the adhesive film 11 between the mounting substrate 51 and the semiconductor chip 31, and on the other hand, a plurality of semiconductor chips 31' are stacked in multiple stages on the semiconductor chip 31. The electrode pads (not shown) of the semiconductor chips 31, 31' and the terminal portions (not shown) of the mounting substrate 51 are electrically connected via bonding wires 53. The sealing resin 54 seals the semiconductor chips 31, 31' and the like on the mounting substrate 51. When manufacturing a semiconductor device of this structure, an adhesive film X with a wafer cutting tape may also be used.

In the semiconductor device shown in Fig. 15, for example, as shown in Fig. 16, a flip-chip mounted semiconductor chip C may be used instead of a wire-bonded mounted semiconductor chip C. When manufacturing a semiconductor device of such a structure, an adhesive film X with a wafer tape may also be used.

The inventors of the present invention have found that, for example, the bonding film 10 of the bonding film X with a wafer-cutting tape used in the manufacture of the semiconductor device described above has a fracture strength of 10 MPa or more and/or a fracture elongation of 60% or more in a tensile test of a 5 mm wide bonding film specimen after hardening under the conditions of an initial chuck distance of 10 mm, 125°C and a tensile speed of 1 mm/sec. Even when the bonding film 10 is relatively thick, the bonding film 10 is suitable for suppressing the occurrence of cracks caused by thermal stress in the bonding layer formed by the bonding film. For example, as shown in the following embodiments and comparative examples.

It is believed that the breaking strength of the adhesive film 10 in the above-mentioned tensile test on the cured adhesive film specimen with a width of 5 mm is 10 MPa or more, preferably 13 MPa or more, more preferably 16 MPa or more, more preferably 19 MPa or more, and more preferably 22 MPa or more. The above-mentioned structure is suitable for resisting the strain generated and accumulated inside the cured adhesive film 10, i.e., the adhesive layer, due to the action of thermal stress and inhibiting the formation of cracks.

It is believed that the above-mentioned structure of the adhesive film 10 in which the elongation at break in the above-mentioned tensile test on the adhesive film specimen having a width of 5 mm after curing is 60% or more, preferably 65% or more, more preferably 70% or more, and more preferably 75% or more is suitable for suppressing the internal strain caused by the action of thermal stress in the adhesive film 10 after curing, that is, the adhesive layer. In the adhesive layer, the smaller the internal strain, the less likely it is to produce cracks.

As described above, the bonding film 10 in the bonding film with a wafer ribbon X is suitable for suppressing the occurrence of cracks caused by thermal stress in the bonding layer formed thereby.

The tensile storage elastic modulus of the adhesive film 10 at 125°C obtained by measuring a 5 mm wide adhesive film specimen after curing under the conditions of an initial chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of ±0.5 μm, and a heating rate of 10°C/min is as described above, preferably 40 MPa or more, more preferably 50 MPa or more, and more preferably 60 MPa or more. This structure is preferred in terms of suppressing the generation of cracks caused by thermal stress in the adhesive layer formed by the adhesive film 10.

As described above, the thickness of the bonding film 10 is preferably 40 μm or more, more preferably 60 μm or more, and even more preferably 80 μm or more. This structure is preferred in terms of using the bonding film 10 as a bonding film for embedding a semiconductor chip.

As mentioned above, the thickness of the bonding film 10 is preferably 150 μm or less, more preferably 140 μm or less, and even more preferably 130 μm or less. This structure is preferred in terms of achieving good cutting of the bonding film 10 when the bonding film 10 is in close contact with the adhesive layer 22 side of the dicing ribbon 20 in the above-mentioned cutting expansion step.

The viscosity of the bonding film 10 at 120°C in the uncured state is as described above, preferably 300 Pa·s or more, more preferably 700 Pa·s or more, and more preferably 1000 Pa·s or more. The viscosity of the bonding film 10 at 120°C in the uncured state is preferably 5000 Pa·s or less, more preferably 4500 Pa·s or less, and more preferably 4000 Pa·s or less. Such structures related to the viscosity or softness of the bonding film 10 in the uncured state are preferred in terms of using the bonding film 10 as a bonding film for embedding semiconductor chips. [Example]

[Example 1] <Preparation of adhesive film> 100 parts by weight of acrylic resin _A1 (trade name "Teisanresin SG-708-6", weight average molecular weight of 700,000, glass transition temperature Tg of 4°C, manufactured by Nagase Chemicals Co., Ltd.), 144 parts by weight of epoxy resin _E1 (trade name "EPPN 501HY", manufactured by Nippon Kayaku Co., Ltd.), 89 parts by weight of phenol resin _F1 (trade name "LVR8210-DL", manufactured by Qun Rong Chemical Industries Co., Ltd.), and inorganic filler (trade name "SE-2050MCV", silica particles with an average particle size of 0.5 μm, manufactured by Admatechs Co., Ltd.), 222 parts by mass of a silane coupling agent (trade name "KBM-303", manufactured by Shin-Etsu Chemical Co., Ltd.), 1.4 parts by mass of a curing catalyst (trade name "TPP-K", manufactured by Hokkien Chemical Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain an adhesive composition. Next, the adhesive composition was applied on the silicone release treated surface of a PET separator film (thickness 38 μm) having a silicone release treated surface using an applicator to form an adhesive composition layer. Next, the composition layer was heat-dried at 130°C for 2 minutes to prepare an adhesive film with a thickness of 40 μm on the PET separator film. Furthermore, the three adhesive films thus prepared were laminated using a laminating machine to prepare the adhesive film of Example 1 (thickness 120 μm). During the lamination, the lamination speed was set to 10 mm/sec, the temperature condition was set to 60°C, and the pressure condition was set to 0.15 MPa. The compositions of the adhesive films in Example 1 and the following examples and comparative examples are disclosed in Table 1 (in Table 1, the unit of each numerical value indicating the composition of the adhesive film is the relative "mass part" in the composition).

<Production of Cut Ribbon> In a reaction vessel equipped with a cooling tube, a nitrogen inlet tube, a thermometer, and a stirring device, a mixture containing 86.4 parts by mass of 2-ethylhexyl acrylate, 13.6 parts by mass of 2-hydroxyethyl acrylate, 0.2 parts by mass of benzoyl peroxide as a polymerization initiator, and 65 parts by mass of toluene as a polymerization solvent was stirred at 61°C in a nitrogen atmosphere for 6 hours (polymerization reaction). Thus, a polymer solution containing acrylic polymer _P1 was obtained. Next, a mixture containing the polymer solution containing acrylic polymer _P1 , 2-methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was stirred at 50°C in an air atmosphere for 48 hours (addition reaction). In the reaction solution, the amount of MOI added is 14.6 parts by mass relative to 100 parts by mass of the acrylic polymer P ₁ , and the amount of dibutyltin dilaurate added is 0.5 parts by mass relative to 100 parts by mass of the acrylic polymer P _1. Through the addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylic acid group on the side chain is obtained. Next, 2 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd.) and 5 parts by mass of a photopolymerization initiator (trade name "Irgacure ₆₅₁ ", manufactured by BASF) are added to the polymer solution relative to 100 parts by mass of the acrylic polymer P 2 and mixed to obtain an adhesive composition. Next, an adhesive composition is applied on the silicone release treated surface of a PET separator film (thickness 38 μm) having a silicone release treated surface using an applicator to form an adhesive composition layer. Next, the composition layer is heat dried at 120°C for 2 minutes to form an adhesive layer with a thickness of 10 μm on the PET separator film. Next, a laminating machine is used to laminate an ethylene-vinyl acetate copolymer (EVA) substrate (trade name "Funcrare NRB#115", thickness 115 μm, manufactured by Gunze Co., Ltd.) on the exposed surface of the adhesive layer at room temperature. A wafer cut tape is produced in the above manner.

<Production of bonding film with cutting tape> The bonding film of Example 1 accompanied by a PET separator film is punched into a disc shape with a diameter of 330 mm. Next, after the PET separator film is peeled off from the bonding film and the PET separator film is peeled off from the above-mentioned cutting tape, a laminating machine is used to bond the adhesive layer exposed in the cutting tape and the surface of the bonding film exposed due to the peeling of the PET separator film. During the bonding, the bonding speed is set to 10 mm/sec, the temperature condition is set to 40°C, and the pressure condition is set to 0.15 MPa. Next, the cutting tape thus bonded to the bonding film is punched into a disc shape with a diameter of 390 mm in such a manner that the center of the cutting tape is aligned with the center of the bonding film. Next, the adhesive layer in the diced ribbon was irradiated with ultraviolet light from the side of the EVA substrate. During the ultraviolet irradiation, a high-pressure mercury lamp was used, and the cumulative irradiation light intensity was set to 400 mJ/cm ² . In the above manner, the diced ribbon-attached bonding film of Example 1 having a laminated structure including the diced ribbon and the bonding film was prepared.

[Example 2] An adhesive film (thickness 120 μm) of Example ₂ was prepared in the same manner as the adhesive film of Example 1, except that 59 parts by mass of epoxy resin _E2 (trade name "KI-3000-4", manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.) and 54 parts by mass _of epoxy resin _E3 (trade name "YL-980", manufactured by Mitsubishi Chemical Co., Ltd.) were used instead of 144 parts by mass of epoxy resin E1, 121 parts by mass of phenol resin F2 (trade name "MEH-7851SS", manufactured by Meiwa Chemical Co., Ltd.) was used instead of ₈₉ parts by mass of phenol resin F1, and the amount of curing catalyst (trade name "TPP-K", manufactured by Hokko Chemical Co., Ltd.) was set to 0.5 parts by mass instead of 0.25 parts by mass. The bonding film with a dicing tape of Example 2 was manufactured in the same manner as the bonding film with a dicing tape of Example 1, except that the bonding film of Example 2 was used instead of the bonding film of Example 1.

[Example 3] An adhesive film (thickness 120 μm) of Example 3 was prepared in the same manner as the adhesive film of Example 1, except that 100 parts by mass of acrylic resin A ₂ (trade name "Teisanresin SG-P3", weight average molecular weight 850,000, glass transition temperature Tg 12°C, manufactured by Nagase Chemicals Co., Ltd.) was used instead of 100 parts by mass of acrylic resin A _1. Furthermore, an adhesive film with a diced ribbon of Example 3 was prepared in the same manner as the adhesive film with a diced ribbon of Example 1, except that the adhesive film of Example 3 was used instead of the above-mentioned adhesive film of Example 1.

[Comparative Example 1] 100 parts by weight of acrylic resin A ₃ (trade name "Teisanresin SG-70L", weight average molecular weight 900,000, glass transition temperature Tg -13°C, manufactured by Nagase Chemicals Co., Ltd.), 102 parts by weight of epoxy resin E ₂ (trade name "KI-3000-4", manufactured by Nippon Steel & Sumitomo Chemicals Co., Ltd.), 13 parts by weight of epoxy resin E ₃ (trade name "YL-980", manufactured by Mitsubishi Chemical Co., Ltd.), 119 parts by weight of phenol resin F ₂ (trade name "MEH-7851SS", manufactured by Meiwa Chemicals Co., Ltd.), and inorganic filler (trade name "SE-2050MCV", silica particles with an average particle size of 0.5 μm, manufactured by Admatechs Co., Ltd.), 222 parts by mass of a silane coupling agent (trade name "KBM-303", manufactured by Shin-Etsu Chemical Co., Ltd.), 1.4 parts by mass of a curing catalyst (trade name "TPP-K", manufactured by Hokkien Chemical Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain an adhesive composition. Next, the adhesive composition was applied to the silicone release treated surface of a PET separator film (thickness 38 μm) having a silicone release treated surface using an applicator to form an adhesive composition layer. Next, the composition layer was heat-dried at 130°C for 2 minutes to prepare an adhesive film with a thickness of 40 μm on the PET separator film. Furthermore, the three adhesive films thus prepared were laminated using a laminating machine to prepare an adhesive film of Comparative Example 1 (120 μm thick). During the lamination, the lamination speed was set to 10 mm/sec, the temperature condition was set to 60°C, and the pressure condition was set to 0.15 MPa. In addition, the adhesive film of Comparative Example 1 was used instead of the above-mentioned adhesive film of Example 1, and the adhesive film with a wafer cutting tape of Comparative Example 1 was prepared in the same manner as the adhesive film with a wafer cutting tape of Example 1.

[Comparative Example 2] An adhesive film (thickness 120 μm) of Comparative Example ₂ was prepared in the same manner as the adhesive film of Comparative Example ₁ , except that the amount of epoxy resin E2 was set to 105 mass parts instead of 102 mass parts, the amount of epoxy resin _E3 was set to 41 mass parts instead of 13 mass parts, the amount of phenol resin F2 was set to 154 mass parts instead of 119 mass parts, and the amount of curing catalyst (trade name "TPP-K", manufactured by Beixing Chemical Co., Ltd.) was set to 0.8 mass parts instead of 0.67 mass parts. Furthermore, the bonding film with a dicing tape of Comparative Example 2 was manufactured in the same manner as the bonding film with a dicing tape of Example 1, except that the bonding film of Comparative Example 2 was used instead of the bonding film of Example 1.

[Comparative Example 3] An adhesive film (thickness 120 μm) of Comparative Example ₃ was prepared in the same manner as the adhesive film of Example 1, except that 100 parts by mass of acrylic resin A ₃ (trade name "Teisanresin SG-70L", manufactured by Nagase Chemicals Co., Ltd.) was used instead of 100 parts by mass of acrylic resin A 1, and the amount of curing catalyst (trade name "TPP-K", manufactured by Hokko Chemical Co., Ltd.) was set to 0.1 parts by mass instead of 0.25 parts by mass. In addition, the adhesive film of Comparative Example 3 was used instead of the above-mentioned adhesive film of Example 1, and the adhesive film with a wafer cutting tape of Comparative Example 3 was prepared in the same manner as the adhesive film with a wafer cutting tape of Example 1.

<Breaking strength and elongation at break after curing> Each adhesive film of Examples 1 to 3 and Comparative Examples 1 to 3 was cured by heating at 150°C for 1 hour and then heating at 175°C for 1 hour. Furthermore, each adhesive film specimen (length 40 mm, width 5 mm, thickness 120 μm) cut from the cured adhesive film was subjected to a tensile test using a dynamic viscoelasticity measuring device (trade name "RSA-III", manufactured by TA Instruments) to measure the breaking strength and elongation at break. In the tensile test, the measuring mode was the tensile mode, the initial chuck distance was 10 mm, the temperature condition was 125°C, and the tensile speed was 1 mm/second. The measured values of breaking strength (MPa) and breaking elongation (%) are shown in Table 1.

<Tensile storage modulus after curing> Each adhesive film of Examples 1 to 3 and Comparative Examples 1 to 3 was cured by heating at 150°C for 1 hour and then heating at 175°C for 1 hour. Furthermore, each adhesive film specimen (length 40 mm, width 5 mm, thickness 120 μm) cut from the cured adhesive film was subjected to a tensile test using a dynamic viscoelasticity measuring device (trade name "RSA-III", manufactured by TA Instruments) to measure the tensile storage modulus. In the tensile test, the measuring mode was the tensile mode, the initial chuck distance was 22.5 mm, the measuring temperature range was 0°C to 150°C, the heating rate was 10°C/min, the dynamic strain was ±0.5 μm, and the frequency was 1 Hz. The obtained tensile storage elastic modulus (MPa) at 125°C is shown in Table 1.

<Viscosity before curing> The viscosity of each adhesive film in Examples 1 to 3 and Comparative Examples 1 to 3 in the uncured state at 120°C was measured. Specifically, 0.1 g of the sample collected from the adhesive film was added to a parallel plate (diameter 20 mm) as a measuring plate, and the melt viscosity (Pa・s) of the sample was measured by the parallel plate method using a rheometer (trade name "MARS3", manufactured by HAAKE). In this measurement, the gap between the parallel plates was 0.1 mm, the strain rate was 5/second, the heating rate was 10°C/minute, and the measurement temperature range was 90 to 150°C. The measurement results are shown in Table 1.

[Temperature Cycle Test] After obtaining a semiconductor chip with a bonding film using bonding films with a dicing tape in Examples 1 to 3 and Comparative Examples 1 to 3, a temperature cycle test was performed on a bonded body sample obtained by bonding the semiconductor chip to a substrate.

Each sample for the temperature cycle test was prepared as follows. First, a silicon wafer (12 inches in diameter, 60 μm thick) was bonded to the bonding film (120 μm thick) side of the bonding film with a dicing tape. Next, the silicon wafer on the bonding film with a dicing tape was cut together with the bonding film by blade dicing using a dicing device (trade name "DFD6260", manufactured by DISCO Co., Ltd.) to separate into chips (10 mm square) with a bonding film. Next, the semiconductor chip with the bonding film was bonded to an organic substrate. Specifically, after the chip with the bonding film was pre-fixed on its bonding film side to the organic substrate, the bonding film between the organic substrate and the chip was hardened to form a bonding layer. During pre-bonding, the heating temperature is set to 120°C, the pressing load is set to 1 kg, and the pressing time is set to 1 second. When hardening the adhesive film, the pressure is set to 7 kg/ ^cm2 , the heating temperature is set to 150°C, and the heating time is set to 1 hour. Next, the semiconductor chip is sealed on the organic substrate by a sealing resin. Specifically, after supplying the sealing resin (trade name "GE-100", manufactured by Hitachi Chemical Co., Ltd.) in a manner such that the semiconductor chip is embedded in the organic substrate, the sealing resin is heated at 175°C for 90 seconds, and then heated at 175°C for 5 hours. In the above manner, bonding samples for temperature cycle tests are prepared using each adhesive film with a cut wafer tape.

The temperature cycle test was conducted using a temperature cycle tester (trade name "TSA-103ES", manufactured by ESPEC Co., Ltd.), and each sample was subjected to 700 cycles of temperature changes in the range of -55℃ to 125℃. The temperature distribution of one cycle includes a holding time of 5 minutes at -55℃ and a holding time of 5 minutes at 125℃.

After the temperature cycle test, the bonded sample was horizontally ground from the substrate side by mechanical grinding to expose the substrate side surface of the bonding layer in the bonded sample. Then, the exposed bonding layer surface was observed. In the observation, the situation where no cracks were generated in the bonding layer was evaluated as good, and the situation where cracks were generated in the bonding layer was evaluated as bad. The evaluation results are shown in Table 1.

The bonded body samples made using the bonding films with dicing tapes of Examples 1 to 3 did not produce cracks in the bonding layer after the above temperature cycle test. On the other hand, the bonded body samples made using the bonding films with dicing tapes of Comparative Examples 1 to 3 produced cracks in the bonding layer after the above temperature cycle test.

[Table 1]

10‧‧‧Adhesive film 11‧‧‧Adhesive film 20‧‧‧Wafer tape 21‧‧‧Substrate 22‧‧‧Adhesive layer 22a‧‧‧Adhesive surface 30‧‧‧Semiconductor wafer 30A‧‧‧Semiconductor wafer 30B‧‧‧Semiconductor wafer segment 30C‧‧‧Semiconductor wafer 30a‧‧‧Segmentation groove 30b‧‧‧Modified area 31‧‧‧Semiconductor chip 31'‧‧‧Semiconductor chip 41‧‧‧Ring frame 42‧‧‧Retainer 43‧‧‧Lifting member 44‧‧‧Pin member 45‧‧‧ Adsorption jig 51‧‧‧Mounting substrate 52‧‧‧Adhesive layer 53‧‧‧Bonding wire 54‧‧‧Sealing resin 55‧‧‧Bump 56‧‧‧Bottom filler C‧‧‧Semiconductor chip R‧‧‧Irradiation area T1‧‧‧Tape for wafer processing T1a‧‧‧Adhesive surface T2‧‧‧Tape for wafer processing T2a‧‧‧Adhesive surface T3‧‧‧Tape for wafer processing T3a‧‧‧Adhesive surface W‧‧‧Semiconductor wafer Wa‧‧‧1st side Wb‧‧‧2nd side X‧‧‧Adhesive film with wafer cutting tape

FIG. 1 is a cross-sectional schematic diagram of a bonding film with a wafer cutting tape in one embodiment of the present invention. FIG. 2(a) and (b) show a part of the steps in a method for manufacturing a semiconductor device using the bonding film with a wafer cutting tape shown in FIG. FIG. 3(a) to (c) show a part of the steps in a method for manufacturing a semiconductor device using the bonding film with a wafer cutting tape shown in FIG. FIG. 4(a) and (b) show a part of the steps in a method for manufacturing a semiconductor device using the bonding film with a wafer cutting tape shown in FIG. FIG. 5(a) to (d) show a part of the steps in a method for manufacturing a semiconductor device using the bonding film with a wafer cutting tape shown in FIG. FIG. 6(a) and (b) show a part of the steps in a method for manufacturing a semiconductor device using the bonding film with a wafer cutting tape shown in FIG. Figures 7(a) to (c) show some steps in a method for manufacturing a semiconductor device using a bonding film with a wafer cutting tape as shown in Figure 1. Figures 8(a) and (b) show some steps in a method for manufacturing a semiconductor device using a bonding film with a wafer cutting tape as shown in Figure 1. Figure 9 shows some steps in a method for manufacturing a semiconductor device using a bonding film with a wafer cutting tape as shown in Figure 1. Figure 10 shows some steps in a method for manufacturing a semiconductor device using a bonding film with a wafer cutting tape as shown in Figure 1. Figures 11(a) and (b) show some steps in a method for manufacturing a semiconductor device using a bonding film with a wafer cutting tape as shown in Figure 1. Fig. 12 (a) to (c) show some steps in the method for manufacturing a semiconductor device using the bonding film with a wafer cutting tape shown in Fig. 1. Fig. 13 (a) and (b) show some steps in the method for manufacturing a semiconductor device using the bonding film with a wafer cutting tape shown in Fig. 1. Fig. 14 shows an example of a semiconductor device manufactured using the bonding film with a wafer cutting tape shown in Fig. 1. Fig. 15 shows an example of a semiconductor device manufactured using the bonding film with a wafer cutting tape shown in Fig. 1. Fig. 16 shows an example of a semiconductor device manufactured using the bonding film with a wafer cutting tape shown in Fig. 1.

10‧‧‧Attach the membrane

20‧‧‧Crystal cutting belt

21‧‧‧Base material

22‧‧‧Adhesive layer

22a‧‧‧Adhesive surface

R‧‧‧Irradiation area

X‧‧‧Attached adhesive film with wafer cutting tape

Claims (7)

A bonding film having a breaking strength of 10 MPa or more and/or a breaking elongation of 60% or more in a tensile test of a 5 mm wide bonding film specimen after hardening under the conditions of an initial chuck distance of 10 mm, 125°C and a tensile speed of 1 mm/s, and a viscosity of 3200~5000 Pa‧s at 120°C in an unhardened state. The bonding film contains a thermosetting resin, an acrylic resin and an inorganic filler, wherein the content of the thermosetting resin is 233/556.65 (≒41.9)~50% by mass, the glass transition temperature of the acrylic resin is 4~10°C, and the content of the inorganic filler is 222/556.65 (≒39.9)~50% by mass. For example, for the adhesive film in claim 1, the tensile storage elastic modulus at 125°C obtained by measuring the 5mm width adhesive film specimen after hardening under the conditions of an initial chuck distance of 22.5mm, a frequency of 1Hz, a dynamic strain of ±0.5μm and a heating rate of 10°C/min is 40MPa or more. The bonding film of claim 1 has a thickness of 40~150μm. The bonding film of claim 2 has a thickness of 40~150μm. The bonding film of any one of claim 1 to 4 is capable of forming a bonding layer that buries the first semiconductor chip mounted on the mounting substrate by wire bonding and the entire or a portion of the bonding wires connected to the first semiconductor chip, and that bonds the second semiconductor chip to the mounting substrate. The bonding film of any one of claims 1 to 4 can form a bonding layer that encapsulates the first semiconductor chip mounted on the mounting substrate and bonds the second semiconductor chip to the mounting substrate. A bonding film with a wafer tape, comprising: a wafer tape having a layered structure including a substrate and an adhesive layer; and a bonding film as in any one of claims 1 to 6, which is in close contact with the adhesive layer in the wafer tape in a releasable manner.