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CN111826100A - Die-bond film - Google Patents

Die-bond film Download PDF

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CN111826100A
CN111826100A CN202010299872.8A CN202010299872A CN111826100A CN 111826100 A CN111826100 A CN 111826100A CN 202010299872 A CN202010299872 A CN 202010299872A CN 111826100 A CN111826100 A CN 111826100A
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adhesive layer
bonding film
dicing
die
pressure
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杉村敏正
福井章洋
大西谦司
木村雄大
高本尚英
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Nitto Denko Corp
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    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • C09J7/24Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241Polyolefin, e.g.rubber
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
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    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
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    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04Homopolymers or copolymers of esters
    • C09J133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
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    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • C09J7/381Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385Acrylic polymers
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    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/02Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
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  • Dicing (AREA)
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Abstract

Provided is a dicing die-bonding film which is less likely to float between an adhesive layer and an adhesive layer during cold expansion and normal temperature expansion, and thereafter. A dicing die-bonding film comprising: a dicing tape having a laminated structure including a substrate and an adhesive layer; and an adhesive layer that is releasably adhered to the adhesive layer in the dicing tape, wherein the adhesive layer has a water contact angle of a surface on the adhesive layer adhesion side of 110 DEG or less and an arithmetic average surface roughness Ra of 1.0 [ mu ] m or less.

Description

切割芯片接合薄膜Die-bond film

技术领域technical field

本发明涉及切割芯片接合薄膜。更详细而言,本发明涉及能够在半导体装置的制造过程中使用的切割芯片接合薄膜。The present invention relates to dicing die-bonding films. More specifically, the present invention relates to a dicing die-bonding film that can be used in a manufacturing process of a semiconductor device.

背景技术Background technique

在半导体装置的制造过程中,在得到具有芯片接合用的尺寸与芯片相当的粘接薄膜的半导体芯片、即带有芯片接合用粘接剂层的半导体芯片的过程中有时使用切割芯片接合薄膜。切割芯片接合薄膜具有对应于作为加工对象的半导体晶圆的尺寸,例如具有由基材和粘合剂层构成的切割带、和可剥离地密合在该粘合剂层侧的芯片接合薄膜(粘接剂层)。In the manufacturing process of a semiconductor device, a dicing die-bonding film is sometimes used in the process of obtaining a semiconductor chip having an adhesive film for die-bonding having a size equivalent to the die, that is, a semiconductor chip with an adhesive layer for die-bonding. The dicing die-bonding film has a size corresponding to the semiconductor wafer to be processed, and includes, for example, a dicing tape composed of a base material and an adhesive layer, and a die-bonding film ( adhesive layer).

作为使用切割芯片接合薄膜来得到带有粘接剂层的半导体芯片的方法之一,已知有经过用于对切割芯片接合薄膜中的切割带进行扩展从而使芯片接合薄膜割断的工序的方法。该方法首先在切割芯片接合薄膜的芯片接合薄膜上贴合半导体晶圆。该半导体晶圆例如按照之后与芯片接合薄膜一起被割断、能够单片化为多个半导体芯片的方式进行了加工。As one of the methods of obtaining a semiconductor chip with an adhesive bond layer by using a dicing die-bonding film, there is known a method of going through a step of extending a dicing tape in the dicing die-bonding film to cut the die-bonding film. In this method, a semiconductor wafer is first attached to the die-bonding film from which the die-bonding film is cut. This semiconductor wafer is processed so that it can be cut|disconnected together with a die-bonding film later, and it can be divided into several semiconductor chips, for example.

然后,为了割断切割带上的芯片接合薄膜,使用扩展装置沿着包含半导体晶圆的径向和圆周方向的二维方向拉伸切割芯片接合薄膜的切割带。在该扩展工序中,在芯片接合薄膜中的相当于割断位置的位置处,位于芯片接合薄膜上的半导体晶圆也产生割断,半导体晶圆在切割芯片接合薄膜或切割带上被单片化为多个半导体芯片。Then, in order to cut the die-bonding film on the dicing tape, the dicing tape for dicing the die-bonding film is stretched in a two-dimensional direction including the radial and circumferential directions of the semiconductor wafer using an expansion device. In this expansion step, the semiconductor wafer located on the die-bonding film is also cut at a position corresponding to the cutting position in the die-bonding film, and the semiconductor wafer is singulated on the dicing die-bonding film or the dicing tape. Multiple semiconductor chips.

然后,对于切割带上的割断后的多个带有芯片接合薄膜的半导体芯片,为了拓宽间隔距离而再次进行扩展工序。然后,例如在经过清洗工序后,利用拾取机构的针状构件将各半导体芯片和与其密合的尺寸与芯片相当的芯片接合薄膜一起从切割带的下侧顶起,从切割带上进行拾取。由此得到带有芯片接合薄膜即粘接剂层的半导体芯片。该带有粘接剂层的半导体芯片借助其粘接剂层通过芯片接合固定到安装基板等被粘物上。Then, for the plurality of semiconductor chips with the die-bonding film that have been cut on the dicing tape, the expansion process is performed again in order to increase the spacing distance. Then, after a cleaning step, for example, each semiconductor chip and a die-bonding film having a size corresponding to the chip adhered thereto are lifted up from the lower side of the dicing tape by the needle-shaped member of the pickup mechanism, and picked up from the dicing tape. Thereby, the semiconductor chip with the adhesive bond layer which is a die-bonding film is obtained. The adhesive layer-attached semiconductor chip is fixed to an adherend such as a mounting substrate by die bonding via the adhesive layer.

关于涉及如以上那样使用的切割芯片接合薄膜的技术,例如记载于下述专利文献1~3。The technique concerning the dicing die-bonding film used as mentioned above is described in the following patent documents 1-3, for example.

现有技术文献prior art literature

专利文献Patent Literature

专利文献1:日本特开2007-2173号公报Patent Document 1: Japanese Patent Laid-Open No. 2007-2173

专利文献2:日本特开2010-177401号公报Patent Document 2: Japanese Patent Laid-Open No. 2010-177401

专利文献3:日本特开2016-115804号公报Patent Document 3: Japanese Patent Laid-Open No. 2016-115804

发明内容SUMMARY OF THE INVENTION

发明要解决的问题Invention to solve problem

近年来,由于半导体的高容量化的需求,电路层的多层化、硅层的薄层化正在进展。但是,通过电路层的多层化,电路层的厚度(总厚度)会增加,从而有电路层中包含的树脂的比例增加的倾向,由此,经多层化的电路层与经薄层化的硅层的线性膨胀率之差变得显著,因此半导体芯片变得容易翘曲。因此,使用以往的切割芯片接合薄膜的情况下,特别是在切割后得到的带有芯片接合薄膜的电路层进行了多层化的半导体芯片存有如下问题:在扩展工序(后述的冷扩展及常温扩展)及之后(例如,清洗工序、直至进行拾取为止的期间等),在切割带的粘合剂层与芯片接合薄膜的界面容易发生剥离(浮起)。若发生浮起,则在扩展工序后(清洗工序、处理时等)半导体芯片容易滑落。In recent years, in order to increase the capacity of semiconductors, multilayering of circuit layers and thinning of silicon layers are progressing. However, by multilayering the circuit layers, the thickness (total thickness) of the circuit layers increases, and the ratio of the resin contained in the circuit layers tends to increase. As a result, the multilayered circuit layers and the thinned circuit layers tend to increase. The difference between the linear expansion coefficients of the silicon layers becomes significant, and thus the semiconductor chip becomes easily warped. Therefore, in the case of using the conventional dicing die-bonding film, in particular, a semiconductor chip in which the circuit layer with the die-bonding film obtained after dicing is multi-layered has the following problem: in the expansion process (cold expansion to be described later) and room temperature expansion) and thereafter (for example, a cleaning process, a period until picking up, etc.), peeling (floating) is likely to occur at the interface between the pressure-sensitive adhesive layer of the dicing tape and the die-bonding film. When the floating occurs, the semiconductor chip is likely to slip off after the expansion process (cleaning process, processing, etc.).

本发明是鉴于上述的问题而作出的,其目的在于,提供在冷扩展时及常温扩展时、以及之后在粘接剂层与粘合剂层之间不易发生浮起的切割芯片接合薄膜。The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a dicing die-bonding film that does not easily float between the adhesive layer and the adhesive layer during cold expansion, during normal temperature expansion, and thereafter.

用于解决问题的方案solution to the problem

本发明人等为了达成上述目的进行了深入研究,结果发现使用如下切割芯片接合薄膜时,在冷扩展时及常温扩展时、以及之后在粘接剂层与粘合剂层之间不易发生浮起,所述切割芯片接合薄膜具备:切割带,其具有包含基材和粘合剂层的层叠结构;及粘接剂层,其以可剥离的方式密合于上述切割带中的上述粘合剂层,上述粘合剂层中,上述粘接剂层密合侧的表面的水接触角为110°以下、算术平均表面粗糙度Ra为1.0μm以下。本发明是基于上述见解而完成的。The inventors of the present invention have conducted intensive studies in order to achieve the above-mentioned object, and as a result, they have found that when a dicing die-bonding film is used as described below, floating is less likely to occur between the adhesive bond layer and the adhesive bond layer during cold expansion, during normal temperature expansion, and thereafter. , the dicing die-bonding film includes: a dicing tape having a laminated structure including a base material and an adhesive layer; and an adhesive layer that is releasably adhered to the above-mentioned adhesive in the above-mentioned dicing tape layer, wherein the adhesive layer has a water contact angle of 110° or less and an arithmetic mean surface roughness Ra of 1.0 μm or less on the surface of the adhesive layer on the adhesive side. The present invention has been completed based on the above findings.

即,本发明提供一种切割芯片接合薄膜,其具备:切割带,其具有包含基材和粘合剂层的层叠结构;及粘接剂层,其以可剥离的方式密合于上述切割带中的上述粘合剂层,上述粘合剂层中,上述粘接剂层密合侧的表面的水接触角为110°以下、算术平均表面粗糙度Ra为1.0μm以下。That is, the present invention provides a dicing die-bonding film comprising: a dicing tape having a laminated structure including a base material and an adhesive layer; and an adhesive layer releasably adhering to the dicing tape In the said pressure-sensitive adhesive layer, in the said pressure-sensitive adhesive layer, the water contact angle of the surface of the said pressure-sensitive adhesive layer adhering side is 110 degrees or less, and the arithmetic mean surface roughness Ra is 1.0 micrometer or less.

本发明的切割芯片接合薄膜具备切割带及粘接剂层。切割带具有包含基材和粘合剂层的层叠结构。粘接剂层以可剥离的方式密合于切割带中的粘合剂层。这种构成的切割芯片接合薄膜可以在半导体装置的制造过程中用于得到带有粘接剂层的半导体芯片。The dicing die-bonding film of the present invention includes a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive layer is releasably adhered to the adhesive layer in the dicing tape. The dicing die-bonding film of such a configuration can be used to obtain a semiconductor chip with an adhesive layer in the manufacturing process of a semiconductor device.

在半导体装置的制造过程中,如上所述,为了得到带有粘接剂层的半导体芯片,有时实施使用切割芯片接合薄膜进行的扩展工序、即用于割断的扩展工序。在该扩展工序中,需要使割断力适宜地作用于切割芯片接合薄膜中的切割带上的粘接剂层。对于本发明的切割芯片接合薄膜中的切割带的粘合剂层,上述粘接剂层密合侧的表面的水接触角为110°以下、算术平均表面粗糙度Ra为1.0μm以下。利用具有这种构成的本发明的切割芯片接合薄膜,粘合剂层与粘接剂层的密合性适度优异,能够抑制扩展工序及之后的粘合剂层与粘接剂层之间发生剥离(浮起)。In the manufacturing process of a semiconductor device, as described above, in order to obtain a semiconductor chip with an adhesive layer, an expansion process using a dicing die-bonding film, that is, an expansion process for severing may be performed. In this expansion step, it is necessary to appropriately act the cutting force on the adhesive layer on the dicing tape in the dicing die-bonding film. The pressure-sensitive adhesive layer of the dicing tape in the dicing die-bonding film of the present invention has a water contact angle of 110° or less and an arithmetic mean surface roughness Ra of 1.0 μm or less on the surface on the side where the pressure-sensitive adhesive layer is in close contact. According to the dicing die-bonding film of the present invention having such a configuration, the adhesiveness between the adhesive layer and the adhesive layer is moderately excellent, and the occurrence of peeling between the adhesive layer and the adhesive layer in the expansion step and subsequent steps can be suppressed (floating).

另外,对于本发明的切割芯片接合薄膜,优选上述粘合剂层的上述表面(粘接剂层密合侧的表面)的、使用水的接触角和二碘甲烷的接触角根据Kaelble Uy式求出的表面自由能的极性成分的值为0.10以上。利用具有这种构成的本发明的切割芯片接合薄膜,与粘接剂层表面的极性成分的差变小,粘合剂层表面与粘接剂层表面的亲和性提高,因此粘合剂层与粘接剂层的密合性变得更适度、能够进一步抑制扩展工序及之后的粘合剂层与粘接剂层之间发生剥离(浮起)。In the dicing die-bonding film of the present invention, it is preferable that the contact angle with water and the contact angle of diiodomethane on the surface of the pressure-sensitive adhesive layer (the surface on the side where the pressure-sensitive adhesive layer is in close contact) are determined by the Kaelble Uy equation. The value of the polar component of the obtained surface free energy is 0.10 or more. With the dicing die-bonding film of the present invention having such a configuration, the difference in polar components with the surface of the adhesive layer is reduced, and the affinity between the surface of the adhesive layer and the surface of the adhesive layer is improved, so that the adhesive The adhesiveness between the layer and the adhesive layer becomes more appropriate, and the occurrence of peeling (floating) between the adhesive layer and the adhesive layer in the expansion step and subsequent steps can be further suppressed.

另外,对于本发明的切割芯片接合薄膜,上述粘合剂层优选含有丙烯酸系聚合物,所述丙烯酸系聚合物包含任选具有烷氧基的含烃基(甲基)丙烯酸酯及含羟基单体作为单体成分。利用具有这种构成的本发明的切割芯片接合薄膜,能够容易地设计具有水接触角为110°以下、算术平均表面粗糙度Ra为1.0μm以下的表面的粘合剂层。Moreover, in the dicing die-bonding film of the present invention, the pressure-sensitive adhesive layer preferably contains an acrylic polymer containing a hydrocarbon group-containing (meth)acrylate and a hydroxyl group-containing monomer optionally having an alkoxy group as a monomer component. With the dicing die-bonding film of the present invention having such a configuration, an adhesive layer having a surface with a water contact angle of 110° or less and an arithmetic mean surface roughness Ra of 1.0 μm or less can be easily designed.

上述粘合剂层优选含有多异氰酸酯化合物作为交联剂。利用具有这种构成的本发明的切割芯片接合薄膜,能够容易地设计具有水接触角为110°以下、算术平均表面粗糙度Ra为1.0μm以下的表面的粘合剂层,并且能够容易地设计能够区分使用粘合剂层显示相对高的粘合力的状态和显示相对低的粘合力的状态的辐射线固化型粘合剂层。It is preferable that the said adhesive layer contains a polyisocyanate compound as a crosslinking agent. With the dicing die-bonding film of the present invention having such a configuration, an adhesive layer having a surface with a water contact angle of 110° or less and an arithmetic mean surface roughness Ra of 1.0 μm or less can be easily designed and easily designed A radiation-curable adhesive layer in a state in which the adhesive layer exhibits relatively high adhesive force and a state in which it exhibits relatively low adhesive force can be distinguished.

发明的效果effect of invention

本发明的切割芯片接合薄膜在为了得到带有粘接剂层的半导体芯片而使用切割芯片接合薄膜的扩展工序及之后,在粘接剂层与粘合剂层之间不易发生浮起。特别是即使在使用了电路层进行了多层化的半导体芯片的情况下,也不易发生浮起。The dicing die-bonding film of the present invention is less likely to float between the adhesive layer and the pressure-sensitive adhesive layer in the expansion step of using the dicing die-bonding film to obtain a semiconductor chip with an adhesive layer. In particular, even in the case of using a semiconductor chip in which the circuit layers are multi-layered, floating is less likely to occur.

附图说明Description of drawings

图1为示出本发明的切割芯片接合薄膜的一实施方式的截面示意图。FIG. 1 is a schematic cross-sectional view showing one embodiment of the dicing die-bonding film of the present invention.

图2示出使用图1所示的切割芯片接合薄膜的半导体装置的制造方法中的一部分工序。FIG. 2 shows a part of steps in a method of manufacturing a semiconductor device using the dicing die-bonding film shown in FIG. 1 .

图3示出图2所示的工序的后续工序。FIG. 3 shows a subsequent process to the process shown in FIG. 2 .

图4示出图3所示的工序的后续工序。FIG. 4 shows a subsequent process to the process shown in FIG. 3 .

图5示出图4所示的工序的后续工序。FIG. 5 shows a subsequent process to the process shown in FIG. 4 .

图6示出图5所示的工序的后续工序。FIG. 6 shows a subsequent process to the process shown in FIG. 5 .

图7示出图6所示的工序的后续工序。FIG. 7 shows a subsequent process to the process shown in FIG. 6 .

图8示出使用图1所示的切割芯片接合薄膜的半导体装置的制造方法的变形例中的一部分工序。FIG. 8 shows some steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in FIG. 1 .

图9示出使用图1所示的切割芯片接合薄膜的半导体装置的制造方法的变形例中的一部分工序。FIG. 9 shows some steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in FIG. 1 .

图10示出使用图1所示的切割芯片接合薄膜的半导体装置的制造方法的变形例中的一部分工序。FIG. 10 shows some steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in FIG. 1 .

图11示出使用图1所示的切割芯片接合薄膜的半导体装置的制造方法的变形例中的一部分工序。FIG. 11 shows some steps in a modification of the method for manufacturing a semiconductor device using the dicing die-bonding film shown in FIG. 1 .

附图标记说明Description of reference numerals

1 切割芯片接合薄膜1 Cut the die-bonding film

10 切割带10 cutting tape

11 基材11 Substrate

12 粘合剂层12 Adhesive Layer

20、21 粘接剂层20, 21 Adhesive layer

W、30A、30C 半导体晶圆W, 30A, 30C semiconductor wafers

30B 半导体晶圆分割体30B Semiconductor Wafer Divider

30a 分割槽30a Split slot

30b 改性区域30b Modified region

31 半导体芯片31 Semiconductor chips

具体实施方式Detailed ways

[切割芯片接合薄膜][Dicing Die Bonding Film]

本发明的切割芯片接合薄膜具备:切割带,其具有包含基材和粘合剂层的层叠结构;和粘接剂层,其以可剥离的方式密合于上述切割带中的上述粘合剂层。以下对本发明的切割芯片接合薄膜的一实施方式进行说明。The dicing die-bonding film of the present invention includes: a dicing tape having a laminated structure including a base material and an adhesive layer; and an adhesive layer that is releasably adhered to the above-mentioned adhesive in the above-mentioned dicing tape Floor. Hereinafter, one Embodiment of the dicing die-bonding film of this invention is demonstrated.

图1为示出本发明的切割芯片接合薄膜的一实施方式的截面示意图。如图1所示,切割芯片接合薄膜1具备:切割带10;和层叠于切割带10中的粘合剂层12上的粘接剂层20,在半导体装置的制造中,能够用于得到带有粘接剂层的半导体芯片的过程中的扩展工序。FIG. 1 is a schematic cross-sectional view showing one embodiment of the dicing die-bonding film of the present invention. As shown in FIG. 1 , the dicing die-bonding film 1 includes: a dicing tape 10; An expansion process in the process of a semiconductor chip with an adhesive layer.

切割芯片接合薄膜1具有圆盘形状,其尺寸对应于作为半导体装置的制造过程中的加工对象的半导体晶圆。切割芯片接合薄膜1的直径在例如345~380mm的范围内(12英寸晶圆对应型)、245~280mm的范围内(8英寸晶圆对应型)、195~230mm的范围内(6英寸晶圆对应型)、或495~530mm的范围内(18英寸晶圆对应型)。The dicing die-bonding film 1 has a disc shape whose size corresponds to a semiconductor wafer to be processed in a manufacturing process of a semiconductor device. The diameter of the dicing die-bonding film 1 is, for example, in the range of 345 to 380 mm (for 12-inch wafers), in the range of 245 to 280 mm (for 8-inch wafers), and in the range of 195 to 230 mm (for 6-inch wafers). compatible type), or within the range of 495 to 530 mm (18-inch wafer compatible type).

切割芯片接合薄膜1中的切割带10具有包含基材11和粘合剂层12的层叠结构。对于切割芯片接合薄膜1中的粘合剂层12的、粘接剂层20所密合的一侧的表面12a,水接触角为110°以下、算术平均表面粗糙度Ra为1.0μm以下。The dicing tape 10 in the dicing die-bonding film 1 has a laminated structure including a base material 11 and an adhesive layer 12 . The surface 12a of the adhesive layer 12 in the dicing die-bonding film 1 on the side to which the adhesive layer 20 is in close contact has a water contact angle of 110° or less and an arithmetic mean surface roughness Ra of 1.0 μm or less.

(基材)(substrate)

切割带中的基材为在切割带、切割芯片接合薄膜中作为支撑体而发挥作用的要素。作为基材,例如可列举出塑料基材(特别是塑料薄膜)。上述基材可以为单层,也可以为同种或不同种的基材的层叠体。The base material in the dicing tape is an element that functions as a support in the dicing tape and the dicing die-bonding film. As a base material, a plastic base material (especially a plastic film) is mentioned, for example. The above-mentioned base material may be a single layer, or may be a laminate of the same kind or different kinds of base materials.

作为构成上述塑料基材的树脂,可列举例如:低密度聚乙烯、直链状低密度聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯、乙烯-乙酸乙烯酯共聚物(EVA)、离聚物、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物等聚烯烃树脂;聚氨基甲酸酯;聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸二乙醇酯、聚对苯二甲酸丁二醇酯(PBT)等聚酯;聚碳酸酯;聚酰亚胺;聚醚醚酮;聚醚酰亚胺;芳族聚酰胺、全芳香族聚酰胺等聚酰胺;聚苯硫醚;氟树脂;聚氯乙烯;聚偏氯乙烯;纤维素树脂;有机硅树脂等。从确保基材良好的热收缩性、在后述的常温扩展工序中容易利用切割带或基材的局部热收缩维持芯片间隔距离的观点出发,基材优选包含乙烯-乙酸乙烯酯共聚物作为主成分。Examples of the resin constituting the plastic base material include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra-low density polyethylene, random copolymer polypropylene, block Copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth) Acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer and other polyolefin resins; polyurethane; polyethylene terephthalate (PET), polyethylene naphthalene Polyester such as diethanol dicarboxylate and polybutylene terephthalate (PBT); polycarbonate; polyimide; polyether ether ketone; polyether imide; aramid, wholly aromatic Polyamide such as polyamide; polyphenylene sulfide; fluororesin; polyvinyl chloride; polyvinylidene chloride; cellulose resin; silicone resin, etc. The substrate preferably contains ethylene-vinyl acetate copolymer as a main component from the viewpoints of ensuring good heat shrinkability of the substrate and making it easy to maintain the distance between chips by the local thermal shrinkage of the dicing tape or the substrate in the room temperature expansion process described later. Element.

需要说明的是,基材的主成分为构成成分中占据最大的质量比例的成分。上述树脂可以仅使用一种,也可以使用两种以上。粘合剂层如后述那样为辐射线固化型粘合剂层的情况下,基材优选具有辐射线透过性。In addition, the main component of a base material is a component which occupies the largest mass ratio among structural components. Only one kind of the above-mentioned resins may be used, or two or more kinds thereof may be used. When the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer as described later, the base material preferably has radiation permeability.

在基材为塑料薄膜时,上述塑料薄膜既可以未取向也可以沿着至少一个方向(一轴方向、二轴方向等)取向。在沿着至少一个方向取向时,塑料薄膜能够沿着该至少一个方向热收缩。当具有热收缩性时,能够使切割带的半导体晶圆的外周部分热收缩,由此能够以拓宽了单片化后的带有粘接剂层的半导体芯片彼此的间隔的状态进行固定,因此能够容易地进行半导体芯片的拾取。为了使基材和切割带具有各向同性的热收缩性,优选基材为二轴取向薄膜。需要说明的是,上述沿着至少一方向取向了的塑料薄膜可以通过将未拉伸的塑料薄膜沿着该至少一方向进行拉伸(一轴拉伸、二轴拉伸等)而得到。When the base material is a plastic film, the plastic film may not be oriented or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film is capable of heat shrinking in the at least one direction. When it has thermal shrinkage, the outer peripheral portion of the semiconductor wafer of the dicing tape can be thermally shrunk, and thus the singulated semiconductor chips with the adhesive layer can be fixed in a state where the gap between the semiconductor chips with the adhesive layer after being separated into pieces is widened. Pickup of semiconductor chips can be easily performed. In order to impart isotropic heat shrinkability to the base material and the dicing tape, the base material is preferably a biaxially oriented film. It should be noted that the plastic film oriented in at least one direction can be obtained by stretching (uniaxial stretching, biaxial stretching, etc.) of an unstretched plastic film in the at least one direction.

基材和切割带在以加热温度100℃和加热时间处理60秒的条件进行的加热处理试验中的热收缩率优选为1~30%,更优选为2~25%,进一步优选为3~20%,特别优选为5~20%。上述热收缩率优选为MD方向和TD方向中的至少一个方向的热收缩率。The thermal shrinkage ratio of the base material and the dicing tape in the heat treatment test performed under the conditions of a heating temperature of 100° C. and a heating time of 60 seconds is preferably 1 to 30%, more preferably 2 to 25%, and still more preferably 3 to 20%. %, particularly preferably 5 to 20%. It is preferable that the said thermal shrinkage rate is the thermal shrinkage rate of at least one of the MD direction and the TD direction.

对于基材的粘合剂层侧表面,出于提高与粘合剂层的密合性、保持性等的目的,例如,可以实施电晕放电处理、等离子体处理、磨砂加工处理、臭氧暴露处理、火焰暴露处理、高压电击暴露处理、离子化辐射线处理等物理处理;铬酸处理等化学处理;基于涂布剂(底涂剂)的易粘接处理等表面处理。另外,为了赋予抗静电能力,可以在基材表面设置包含金属、合金、它们的氧化物等的导电性的蒸镀层。优选对基材的粘合剂层侧的表面整体实施了用于提高密合性的表面处理。The adhesive layer side surface of the base material may be subjected to, for example, corona discharge treatment, plasma treatment, sanding treatment, or ozone exposure treatment for the purpose of improving adhesion to the adhesive layer, retention, etc. , flame exposure treatment, high voltage electric shock exposure treatment, ionizing radiation treatment and other physical treatments; chromic acid treatment and other chemical treatments; coating agent (primer) based easy bonding treatment and other surface treatments. In addition, in order to impart antistatic capability, a conductive vapor deposition layer containing metals, alloys, oxides thereof, and the like may be provided on the surface of the substrate. It is preferable that the surface treatment for improving adhesiveness is given to the whole surface of the adhesive layer side of a base material.

从确保基材作为切割带和切割芯片接合薄膜的支撑体发挥作用的强度的观点出发,基材的厚度优选为40μm以上,更优选为50μm以上,进一步优选为55μm以上,特别优选为60μm以上。另外,从使切割带和切割芯片接合薄膜实现适度的挠性的观点出发,基材的厚度优选为200μm以下,更优选为180μm以下,进一步优选为150μm以下。From the viewpoint of securing the strength of the base material to function as a support for the dicing tape and the dicing die-bonding film, the thickness of the base material is preferably 40 μm or more, more preferably 50 μm or more, still more preferably 55 μm or more, and particularly preferably 60 μm or more. In addition, from the viewpoint of realizing moderate flexibility of the dicing tape and the dicing die-bonding film, the thickness of the base material is preferably 200 μm or less, more preferably 180 μm or less, and further preferably 150 μm or less.

(粘合剂层)(adhesive layer)

本发明的切割芯片接合薄膜中的粘合剂层如上所述,粘接剂层密合侧的表面的水接触角为110°以下、算术平均表面粗糙度Ra为1.0μm以下。本发明的切割芯片接合薄膜通过具有这种构成,从而粘合剂层与粘接剂层的密合性适度优异,能够抑制扩展工序及之后的粘合剂层与粘接剂层之间发生剥离(浮起)。The pressure-sensitive adhesive layer in the dicing die-bonding film of the present invention has a water contact angle of 110° or less and an arithmetic mean surface roughness Ra of 1.0 μm or less on the surface on the side of the pressure-sensitive adhesive layer in close contact as described above. Since the dicing die-bonding film of the present invention has such a configuration, the adhesiveness between the adhesive layer and the adhesive layer is moderately excellent, and the occurrence of peeling between the adhesive layer and the adhesive layer in the expansion step and subsequent steps can be suppressed (floating).

粘合剂层的、粘接剂层密合侧的表面(表面12a)的算术平均表面粗糙度(Ra)为1.0μm以下,优选为0.5μm以下、更优选为0.3μm以下。上述Ra可以通过对本发明的切割芯片接合薄膜中未层叠有粘接剂层的部分的粘合剂层表面进行测定来得到。上述算术平均表面粗糙度可以基于JIS B 0601来测定。The arithmetic mean surface roughness (Ra) of the surface (surface 12a) of the adhesive layer on the adhesive layer adhesion side is 1.0 μm or less, preferably 0.5 μm or less, and more preferably 0.3 μm or less. The said Ra can be obtained by measuring the adhesive layer surface of the part in which the adhesive bond layer was not laminated|stacked in the dicing die-bonding film of this invention. The above-mentioned arithmetic mean surface roughness can be measured based on JIS B 0601.

粘合剂层的、粘接剂层密合侧的表面(表面12a)的水接触角为110°以下、优选为108°以下、更优选为105°以下。上述水接触角可以通过对本发明的切割芯片接合薄膜中未层叠有粘接剂层的部分的粘合剂层表面进行测定来得到。The water contact angle of the surface (surface 12a) of the adhesive layer on the adhesive layer adhesion side is 110° or less, preferably 108° or less, and more preferably 105° or less. The said water contact angle can be obtained by measuring the adhesive layer surface of the part in which the adhesive bond layer was not laminated|stacked in the dicing die-bonding film of this invention.

另外,上述水接触角例如为80°以上,优选为84°以上、更优选为88°以上。上述水接触为80°以上时,能够抑制粘合剂层与粘接剂层的熔接、在有意将粘合剂层与粘接剂层剥离时更不易发生不剥离的不良情况。Moreover, the said water contact angle is 80 degrees or more, for example, Preferably it is 84 degrees or more, More preferably, it is 88 degrees or more. When the said water contact is 80 degrees or more, fusion of an adhesive bond layer and an adhesive bond layer can be suppressed, and when an adhesive bond layer and an adhesive bond layer are peeled intentionally, the inconvenience of not peeling becomes less likely to occur.

粘合剂层的、粘接剂层密合侧的表面(表面12a)的使用水的接触角和二碘甲烷的接触角根据Kaelble Uy式求出的表面自由能的极性成分的值优选为0.10以上、更优选为0.20以上、进一步优选为0.40以上。上述极性成分的值为0.10以上时,与粘接剂层表面的极性成分的差变小,粘合剂层表面与粘接剂层表面的亲和性提高,因此粘合剂层与粘接剂层的密合性变得更适度、能够进一步抑制扩展工序及之后的粘合剂层与粘接剂层之间发生剥离(浮起)。上述极性成分的值为求出表面自由能时使用的下述式(1)中的γsp,可以使用下述式(2)及下述式(3)来求出。The value of the polar component of the surface free energy obtained by the Kaelble Uy equation for the contact angle with water and the contact angle of diiodomethane on the surface (surface 12a) of the adhesive layer on the adhesion side of the adhesive layer is preferably: 0.10 or more, more preferably 0.20 or more, still more preferably 0.40 or more. When the value of the above-mentioned polar component is 0.10 or more, the difference between the polar component and the surface of the adhesive layer becomes small, and the affinity between the surface of the adhesive layer and the surface of the adhesive layer is improved, so that the The adhesiveness of the adhesive bond layer becomes more appropriate, and the occurrence of peeling (floating) between the adhesive bond layer and the adhesive bond layer in the expansion step and subsequent steps can be further suppressed. The value of the above-mentioned polar component can be obtained by using the following formula (2) and the following formula (3) as γs p in the following formula (1) used to obtain the surface free energy.

γs=γsd+γsp (1)γs=γs d +γs p (1)

γw(1+cosθw)=2(γsdγwd)1/2+2(γspγwp)1/2 (2)γw(1+cosθw)=2(γs d γw d ) 1/2 +2(γs p γw p ) 1/2 (2)

γi(1+cosθi)=2(γsdγid)1/2+2(γspγip)1/2 (3)γi(1+cosθi)=2(γs d γi d ) 1/2 +2(γs p γi p ) 1/2 (3)

上述式(1)~(3)中,γs表示粘合剂层的表面自由能,γsd表示粘合剂层的表面自由能的分散成分,γsp表示粘合剂层的表面自由能的极性成分,γw表示72.8mJ/m2,γwd表示21.8mJ/m2,γwp表示51.0mJ/m2,γi表示50.8mJ/m2,γid表示48.5mJ/m2,γip表示2.3mJ/m2,θw表示粘合剂层表面的水接触角,θi表示粘合剂层表面的二碘甲烷接触角。γw、γwd、γwp、γi、γid、及γip为已知的文献值。In the above formulae (1) to (3), γs represents the surface free energy of the adhesive layer, γs d represents the dispersion component of the surface free energy of the adhesive layer, and γs p represents the polar of the surface free energy of the adhesive layer. Sex components, γw represents 72.8mJ/m 2 , γw d represents 21.8mJ/m 2 , γw p represents 51.0mJ/m 2 , γi represents 50.8mJ/m 2 , γi d represents 48.5mJ/m 2 , and γip represents 2.3 mJ/m 2 , θw represents the water contact angle of the adhesive layer surface, and θi represents the diiodomethane contact angle of the adhesive layer surface. γw, γw d , γw p , γi, γid , and γip are known literature values.

切割带的粘合剂层优选为含有丙烯酸系聚合物作为基础聚合物的粘合剂层(丙烯酸系粘合剂层)。上述丙烯酸系聚合物是含有源自丙烯酸系单体(分子中具有(甲基)丙烯酰基的单体成分)的构成单元作为聚合物的构成单元的聚合物。The pressure-sensitive adhesive layer of the dicing tape is preferably a pressure-sensitive adhesive layer (acrylic pressure-sensitive adhesive layer) containing an acrylic polymer as a base polymer. The said acrylic polymer is a polymer which contains the structural unit derived from an acrylic monomer (monomer component which has a (meth)acryloyl group in a molecule|numerator) as a structural unit of a polymer.

上述丙烯酸系聚合物优选为以质量比例计源自(甲基)丙烯酸酯的构成单元的含量最多的聚合物。需要说明的是,丙烯酸系聚合物既可以仅使用一种也可以使用两种以上。另外,在本说明书中,“(甲基)丙烯酸”表示“丙烯酸”和/或“甲基丙烯酸”(“丙烯酸”和“甲基丙烯酸”中的任一者或两者),其它也同样。It is preferable that the said acrylic polymer is a polymer which has the largest content of the structural unit derived from a (meth)acrylate by mass ratio. In addition, only 1 type of acrylic polymer may be used, and 2 or more types may be used for it. In addition, in this specification, "(meth)acrylic acid" means "acrylic acid" and/or "methacrylic acid" (either or both of "acrylic acid" and "methacrylic acid"), and the same applies to others.

作为上述(甲基)丙烯酸酯,例如,可列举出任选具有烷氧基的含烃基(甲基)丙烯酸酯。作为含烃基(甲基)丙烯酸酯,可列举出(甲基)丙烯酸烷基酯、(甲基)丙烯酸环烷基酯、(甲基)丙烯酸芳基酯等。As said (meth)acrylate, the hydrocarbon group containing (meth)acrylate which may have an alkoxy group is mentioned, for example. Examples of the hydrocarbon group-containing (meth)acrylate include alkyl (meth)acrylate, cycloalkyl (meth)acrylate, aryl (meth)acrylate, and the like.

作为上述(甲基)丙烯酸烷基酯,可列举例如:(甲基)丙烯酸的甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷基酯、十二烷基酯(月桂酯)、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等。Examples of the above-mentioned alkyl (meth)acrylate include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl (meth)acrylic acid esters, isoamyl esters, hexyl esters, heptyl esters, octyl esters, 2-ethylhexyl esters, isooctyl esters, nonyl esters, decyl esters, isodecyl esters, undecyl esters, dodecyl esters (lauryl esters ), tridecyl ester, tetradecyl ester, hexadecyl ester, octadecyl ester, eicosyl ester, etc.

作为上述(甲基)丙烯酸环烷基酯,可列举例如:(甲基)丙烯酸的环戊酯、环己酯等。作为上述(甲基)丙烯酸芳基酯,可列举例如:(甲基)丙烯酸的苯酯、苄酯。As said (meth)acrylic-acid cycloalkyl ester, the cyclopentyl ester of (meth)acrylic acid, a cyclohexyl ester, etc. are mentioned, for example. As said (meth)acrylic-acid aryl ester, the phenyl ester and benzyl ester of (meth)acrylic acid are mentioned, for example.

作为具有烷氧基的含烃基(甲基)丙烯酸酯,可列举出将上述含烃基(甲基)丙烯酸酯中的烃基中的1个以上氢原子取代为烷氧基而成者,例如可列举出(甲基)丙烯酸的2-甲氧基甲基酯、2-甲氧基乙基酯、2-甲氧基丁基酯等。Examples of the hydrocarbon group-containing (meth)acrylate having an alkoxy group include those obtained by substituting one or more hydrogen atoms in the hydrocarbon group in the above-mentioned hydrocarbon group-containing (meth)acrylate with an alkoxy group, and examples thereof include 2-methoxymethyl ester, 2-methoxyethyl ester, 2-methoxybutyl ester of (meth)acrylic acid, etc.

上述任选具有烷氧基的含烃基(甲基)丙烯酸酯可以仅使用一种,也可以使用两种以上。Only one type of hydrocarbon group-containing (meth)acrylate which may have an alkoxy group may be used, or two or more types may be used.

对于上述任选具有烷氧基的含烃基(甲基)丙烯酸酯,在一实施方式中,酯部中的碳数的总数(具有烷氧基的情况下,为包括烷氧基中的碳数的总数)优选为6~10。特别优选为烃基的碳数的总数为6~10的含烃基(甲基)丙烯酸酯。该情况下,能够更容易地兼顾扩展工序及之后的粘合剂层与粘接剂层之间的浮起的抑制性、和拾取工序中的良好的拾取性。Regarding the above-mentioned hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group, in one embodiment, the total number of carbon atoms in the ester moiety (in the case of having an alkoxy group, the total number of carbon atoms in the alkoxy group is included) The total number) is preferably 6-10. Particularly preferred is a hydrocarbon group-containing (meth)acrylate in which the total number of carbon atoms in the hydrocarbon group is 6 to 10. In this case, it is possible to more easily achieve both the suppression of floating between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer after the expansion process and the good pick-up property in the pickup process.

需要说明的是,对于上述任选具有烷氧基的含烃基(甲基)丙烯酸酯,在又一实施方式中,酯部中的碳数的总数(具有烷氧基的情况下,为包括烷氧基中的碳数的总数)优选为2~4。特别优选为烃基的碳数的总数为2~4的含烃基(甲基)丙烯酸酯。该情况下,上述任选具有烷氧基的含烃基(甲基)丙烯酸酯由于极性比较高,因此即使含极性基团的单体的比例比较少,也能够容易地使粘合剂层表面的水接触角为110°以下。In addition, about the above-mentioned hydrocarbon group-containing (meth)acrylate which may have an alkoxy group, in yet another embodiment, the total number of carbon atoms in the ester moiety (in the case of having an alkoxy group, an alkoxy group is included) The total number of carbon numbers in the oxy group) is preferably 2-4. Particularly preferred is a hydrocarbon group-containing (meth)acrylate in which the total number of carbon atoms in the hydrocarbon group is 2 to 4. In this case, since the above-mentioned hydrocarbon group-containing (meth)acrylate which may have an alkoxy group has a relatively high polarity, even if the ratio of the polar group-containing monomer is relatively small, the pressure-sensitive adhesive layer can be easily formed. The water contact angle of the surface is 110° or less.

为了使粘合剂层适当地表现出基于任选具有烷氧基的含烃基(甲基)丙烯酸酯的粘合性等基本特性,用于形成丙烯酸系聚合物的全部单体成分中的任选具有烷氧基的含烃基(甲基)丙烯酸酯的比例优选20摩尔%以上、更优选为30摩尔%以上。进一步优选为40摩尔%以上。In order for the pressure-sensitive adhesive layer to appropriately exhibit basic properties such as adhesiveness based on the hydrocarbon group-containing (meth)acrylate which optionally has an alkoxy group, optional among all monomer components for forming the acrylic polymer is required. The ratio of the hydrocarbon group-containing (meth)acrylate having an alkoxy group is preferably 20 mol % or more, and more preferably 30 mol % or more. More preferably, it is 40 mol% or more.

需要说明的是,本说明书中,上述单体成分中不包含在对粘合剂层照射辐射线前的、组入到聚合物的阶段中具有辐射线聚合性基团的化合物(例如,后述的具有第2官能团及辐射线聚合性的碳-碳双键的化合物)。In addition, in this specification, the said monomer component does not contain the compound which has a radiation polymerizable group in the stage of incorporating into the polymer before irradiating radiation to the pressure-sensitive adhesive layer (for example, the following-mentioned compound with a second functional group and a radiation polymerizable carbon-carbon double bond).

对于上述丙烯酸系聚合物,出于内聚力、耐热性等的改性的目的,可以包含源自能与上述任选具有烷氧基的含烃基(甲基)丙烯酸酯共聚的其他单体成分的构成单元。作为上述其他单体成分,例如可列举出含羧基单体、含酸酐单体、含羟基单体、含缩水甘油基单体、含磺酸基单体、含磷酸基单体、含氮原子单体等含极性基团的单体等。The above-mentioned acrylic polymer may contain, for the purpose of modification of cohesion, heat resistance, etc., a monomer component derived from other monomer components that can be copolymerized with the above-mentioned hydrocarbon group-containing (meth)acrylate which optionally has an alkoxy group. constituent unit. Examples of the above-mentioned other monomer components include carboxyl group-containing monomers, acid anhydride-containing monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, nitrogen atom-containing monomers such as monomers containing polar groups, etc.

作为上述含羧基单体,可列举例如:丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、马来酸、富马酸、巴豆酸等。Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid, and the like. .

作为上述酸酐单体,可列举例如:马来酸酐、衣康酸酐等。作为上述含羟基单体,可列举例如:(甲基)丙烯酸2-羟基乙酯、(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸4-羟基丁酯、(甲基)丙烯酸6-羟基己酯、(甲基)丙烯酸8-羟基辛酯、(甲基)丙烯酸10-羟基癸酯、(甲基)丙烯酸12-羟基月桂酯、(甲基)丙烯酸(4-羟基甲基环己基)甲酯等。As said acid anhydride monomer, maleic anhydride, itaconic anhydride, etc. are mentioned, for example. Examples of the above-mentioned hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6 (meth)acrylate. -Hydroxyhexyl, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, (4-hydroxymethyl) (meth)acrylate Hexyl) methyl ester, etc.

作为上述含缩水甘油基单体,可列举例如:(甲基)丙烯酸缩水甘油酯、(甲基)丙烯酸甲基缩水甘油酯等。As said glycidyl group-containing monomer, glycidyl (meth)acrylate, methyl glycidyl (meth)acrylate, etc. are mentioned, for example.

作为上述含磺酸基单体,可列举例如:苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧基萘磺酸等。Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, and (meth)acrylamidepropanesulfonic acid , (meth) sulfopropyl acrylate, (meth) acryloyloxynaphthalene sulfonic acid, etc.

作为上述含磷酸基单体,例如可列举出2-羟基乙基丙烯酰基磷酸酯等。As said phosphoric acid group containing monomer, 2-hydroxyethyl acryloyl phosphate etc. are mentioned, for example.

作为上述含氮原子单体,例如可列举出(甲基)丙烯酰基吗啉等含吗啉基单体、(甲基)丙烯腈等含氰基单体、(甲基)丙烯酰胺等含酰胺基单体等。Examples of the nitrogen atom-containing monomers include morpholine group-containing monomers such as (meth)acryloyl morpholine, cyano group-containing monomers such as (meth)acrylonitrile, and amides such as (meth)acrylamide. base monomers, etc.

作为上述其他单体成分,其中,优选含羟基单体、含氮原子单体(特别是含吗啉基单体),更优选为(甲基)丙烯酸2-羟基乙酯((甲基)丙烯酸2-羟基乙酯)、(甲基)丙烯酰基吗啉。即,上述丙烯酸系聚合物优选包含源自(甲基)丙烯酸2-羟基乙酯的构成单元和/或源自(甲基)丙烯酰基吗啉的构成单元。Among these other monomer components, hydroxyl group-containing monomers and nitrogen atom-containing monomers (especially morpholine group-containing monomers) are preferred, and 2-hydroxyethyl (meth)acrylate ((meth)acrylic acid) is more preferred 2-hydroxyethyl ester), (meth)acryloyl morpholine. That is, it is preferable that the said acrylic polymer contains the structural unit derived from 2-hydroxyethyl (meth)acrylate and/or the structural unit derived from (meth)acryloyl morpholine.

上述其他单体成分可以仅使用一种,也可以使用两种以上。Only one type of the above-mentioned other monomer components may be used, or two or more types may be used.

为了使粘合剂层适当地表现出基于任选具有烷氧基的含烃基(甲基)丙烯酸酯的粘合性等基本特性,用于形成丙烯酸系聚合物的全部单体成分中的上述含极性基团单体的合计比例优选60摩尔%以下、更优选为50摩尔%以下。另外,从能够容易地将粘合剂层表面的水接触角设计为110°以下的观点出发,上述含极性基团的单体的合计比例优选10摩尔%以上,更优选为15摩尔%以上。In order for the pressure-sensitive adhesive layer to appropriately exhibit basic properties such as adhesiveness based on the hydrocarbon group-containing (meth)acrylate which optionally has an alkoxy group, the above-mentioned containing among all the monomer components used to form the acrylic polymer The total ratio of the polar group monomers is preferably 60 mol % or less, and more preferably 50 mol % or less. In addition, from the viewpoint that the water contact angle of the pressure-sensitive adhesive layer surface can be easily designed to be 110° or less, the total ratio of the polar group-containing monomers is preferably 10 mol % or more, and more preferably 15 mol % or more. .

为了使粘合剂层适当地表现出基于任选具有烷氧基的含烃基(甲基)丙烯酸酯的粘合性等基本特性,用于形成丙烯酸系聚合物的全部单体成分中的源自含羟基单体的构成单元的比例优选5摩尔%以上、更优选为10摩尔%以上。另外,上述比例例如为80摩尔%以下,可以为70摩尔%以下、60摩尔%以下。In order for the pressure-sensitive adhesive layer to appropriately exhibit basic properties such as adhesiveness based on the hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group, among all the monomer components used to form the acrylic polymer, the The ratio of the structural unit of the hydroxyl group-containing monomer is preferably 5 mol % or more, and more preferably 10 mol % or more. Moreover, the said ratio is 80 mol% or less, for example, 70 mol% or less, 60 mol% or less may be sufficient as it.

使用上述含氮原子单体作为形成丙烯酸系聚合物的单体成分的情况下,从能够容易地将粘合剂层表面的水接触角设计为110°以下的观点出发,用于形成丙烯酸系聚合物的全部单体成分中的源自含氮原子单体的构成单元的比例优选为3摩尔%以上、更优选为5摩尔%以上。另外,上述比例例如为50摩尔%以下,可以为30摩尔%以下、20摩尔%以下。When the above-mentioned nitrogen atom-containing monomer is used as a monomer component for forming an acrylic polymer, it is used for forming an acrylic polymer from the viewpoint that the water contact angle of the pressure-sensitive adhesive layer surface can be easily designed to be 110° or less The proportion of the structural unit derived from the nitrogen atom-containing monomer in the total monomer components of the product is preferably 3 mol % or more, and more preferably 5 mol % or more. Moreover, the said ratio is 50 mol% or less, for example, 30 mol% or less, 20 mol% or less may be sufficient as it.

上述丙烯酸系聚合物为了在其聚合物骨架中形成交联结构,可以含有源自多官能性单体的构成单元,该多官能性单体能与形成丙烯酸系聚合物的单体成分共聚。作为上述多官能性单体,可列举例如:己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧(甲基)丙烯酸酯(例如聚(甲基)丙烯酸缩水甘油酯)、聚酯(甲基)丙烯酸酯、氨基甲酸酯(甲基)丙烯酸酯等在分子内具有(甲基)丙烯酰基和其它反应性官能团的单体等。The said acrylic polymer may contain the structural unit derived from the polyfunctional monomer which can be copolymerized with the monomer component which forms an acrylic polymer in order to form a crosslinked structure in the polymer backbone. As said polyfunctional monomer, for example, hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, new Pentylene glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate Esters, epoxy (meth)acrylates (eg polyglycidyl(meth)acrylate), polyester (meth)acrylates, urethane (meth)acrylates, etc. have (methyl) in the molecule ) monomers of acryloyl and other reactive functional groups, etc.

上述多官能性单体可以仅使用一种,也可以使用两种以上。为了使粘合剂层适当地表现出基于任选具有烷氧基的含烃基(甲基)丙烯酸酯的粘合性等基本特性,用于形成丙烯酸系聚合物的全部单体成分中的上述多官能性单体的比例优选为40摩尔%以下、更优选为30摩尔%以下。Only one type of the above-mentioned polyfunctional monomer may be used, or two or more types may be used. In order for the pressure-sensitive adhesive layer to appropriately exhibit basic properties such as adhesiveness based on the hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group, many of the above-mentioned monomer components used for forming the acrylic polymer are required. The ratio of the functional monomer is preferably 40 mol % or less, and more preferably 30 mol % or less.

上述丙烯酸系聚合物优选在含有源自具有第1官能团的单体(例如上述含极性基团单体)的构成单元的同时,含有源自具有可与上述第1官能团反应的第2官能团及辐射线聚合性官能团的化合物的结构部。丙烯酸系聚合物具有这种构成的情况下,后述的辐射线固化性粘合剂的设计变容易。The acrylic polymer preferably contains a structural unit derived from a monomer having a first functional group (for example, the above-mentioned polar group-containing monomer), as well as a second functional group having a reactable with the first functional group and The structural part of the compound of the radiation polymerizable functional group. When an acrylic polymer has such a structure, the design of the radiation curable adhesive mentioned later becomes easy.

作为上述第1官能团和上述第2官能团的组合,可列举例如:羧基与环氧基、环氧基与羧基、羧基与氮丙啶基、氮丙啶基与羧基、羟基与异氰酸酯基、异氰酸酯基与羟基等。这些中,从追踪反应的容易程度的观点出发,优选羟基与异氰酸酯基的组合、异氰酸酯基与羟基的组合。其中,制作具有反应性高的异氰酸酯基的聚合物的技术难度高,而从具有羟基的丙烯酸系聚合物的制作和入手的容易性的观点出发,优选上述第1官能团为羟基且上述第2官能团为异氰酸酯基的组合。Examples of combinations of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridine group, an aziridine group and a carboxyl group, a hydroxyl group and an isocyanate group, and an isocyanate group. with hydroxyl, etc. Among these, the combination of a hydroxyl group and an isocyanate group, and the combination of an isocyanate group and a hydroxyl group are preferable from a viewpoint of the easiness of tracing a reaction. Among them, it is technically difficult to prepare a polymer having a highly reactive isocyanate group, but from the viewpoint of ease of preparation and availability of an acrylic polymer having a hydroxyl group, the first functional group is preferably a hydroxyl group and the second functional group is preferably a hydroxyl group. It is a combination of isocyanate groups.

上述丙烯酸系聚合物特别优选在含有源自含羟基单体的构成单元的同时,含有源自具有辐射线聚合性的碳-碳双键(特别是(甲基)丙烯酰基)及异氰酸酯基的化合物的结构部。In particular, the acrylic polymer preferably contains a compound derived from a radiation polymerizable carbon-carbon double bond (especially a (meth)acryloyl group) and an isocyanate group in addition to a structural unit derived from a hydroxyl group-containing monomer the structural department.

作为具有辐射性聚合性的碳-碳双键及异氰酸酯基的化合物,可列举出甲基丙烯酰基异氰酸酯、2-丙烯酰氧基乙基异氰酸酯、2-甲基丙烯酰氧基乙基异氰酸酯、间异丙烯基-α,α-二甲基苄基异氰酸酯等。其中,优选2-丙烯酰氧基乙基异氰酸酯、2-甲基丙烯酰氧基乙基异氰酸酯。另外,作为具有羟基的丙烯酸系聚合物,可列举出包含源自上述的含羟基单体、2-羟基乙基乙烯基醚、4-羟基丁基乙烯基醚、二乙二醇单乙烯基醚等醚系化合物的构成单元的丙烯酸系聚合物。Examples of compounds having radiation polymerizable carbon-carbon double bonds and isocyanate groups include methacryloyl isocyanate, 2-acryloyloxyethyl isocyanate, 2-methacryloyloxyethyl isocyanate, meta- Isopropenyl-α,α-dimethylbenzyl isocyanate, etc. Among them, 2-acryloyloxyethyl isocyanate and 2-methacryloyloxyethyl isocyanate are preferable. In addition, examples of the acrylic polymer having a hydroxyl group include those derived from the above-mentioned hydroxyl group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glycol monovinyl ether. An acrylic polymer that is a constituent unit of an ether-based compound.

源自上述具有第1官能团的单体的构成单元与上述具有第2官能团及辐射线聚合性官能团的化合物的摩尔比[前者/后者]优选0.95以上、更优选为1.00以上、进一步优选为1.05以上、特别优选为1.10以上。上述摩尔比为0.95以上时,能充分促进第1官能团(例如羟基)与第2官能团(例如异氰酸酯基)的键合,但推测粘合剂层中的丙烯酸系聚合物中的未反应的第1官能团会残存一定程度,粘合剂层与基材之间的剥离力进一步提高,更不易引起扩展时的粘合剂层的破裂。上述摩尔比例如为10.00以下,可以为5.00以下、3.00以下、2.00以下、1.50以下、1.30以下。The molar ratio [the former/the latter] of the structural unit derived from the monomer having the first functional group and the compound having the second functional group and the radiation polymerizable functional group is preferably 0.95 or more, more preferably 1.00 or more, still more preferably 1.05 or more, particularly preferably 1.10 or more. When the molar ratio is 0.95 or more, the bonding between the first functional group (for example, hydroxyl group) and the second functional group (for example, isocyanate group) can be sufficiently promoted, but the unreacted first functional group in the acrylic polymer in the pressure-sensitive adhesive layer is presumed to be unreacted. The functional group remains to a certain extent, the peeling force between the adhesive layer and the substrate is further improved, and the adhesive layer is less likely to be broken during expansion. The above-mentioned molar ratio is, for example, 10.00 or less, and may be 5.00 or less, 3.00 or less, 2.00 or less, 1.50 or less, or 1.30 or less.

特别是,含羟基单体与2-甲基丙烯酰氧基乙基异氰酸酯的摩尔比[含羟基单体/2-甲基丙烯酰氧基乙基异氰酸酯]优选为上述范围内。In particular, the molar ratio of the hydroxyl group-containing monomer to 2-methacryloyloxyethyl isocyanate [hydroxyl group-containing monomer/2-methacryloyloxyethyl isocyanate] is preferably within the above range.

丙烯酸系聚合物可通过将包含丙烯酸系单体的一种以上单体成分供于聚合而得到。作为聚合方法,可列举溶液聚合、乳液聚合、本体聚合、悬浮聚合等。The acrylic polymer can be obtained by subjecting one or more monomer components including an acrylic monomer to polymerization. As a polymerization method, solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, etc. are mentioned.

粘合剂层或形成粘合剂层的粘合剂可以含有交联剂。例如,当使用丙烯酸系聚合物作为基础聚合物时,能够使丙烯酸系聚合物交联、进一步减少粘合剂层中的低分子量物质。另外,能够提高丙烯酸系聚合物的数均分子量。The adhesive layer or the adhesive forming the adhesive layer may contain a crosslinking agent. For example, when an acrylic polymer is used as a base polymer, the acrylic polymer can be crosslinked, and the low molecular weight substances in the adhesive layer can be further reduced. In addition, the number average molecular weight of the acrylic polymer can be increased.

作为上述交联剂,可列举例如:多异氰酸酯化合物、环氧化合物、多元醇化合物(多酚类化合物等)、氮丙啶化合物、三聚氰胺化合物等。其中,优选多异氰酸酯化合物。该情况下,能够容易地设计具有水接触角为110°以下、算术平均表面粗糙度Ra为1.0μm以下的表面的粘合剂层,并且能够容易地设计能够区分使用粘合剂层显示相对高的粘合力的状态和显示相对低的粘合力的状态的辐射线固化型粘合剂层。当使用交联剂时,其用量相对于基础聚合物100质量份优选为5质量份左右以下,更优选为0.1~5质量份。As said crosslinking agent, a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol type compound etc.), an aziridine compound, a melamine compound etc. are mentioned, for example. Among them, polyisocyanate compounds are preferred. In this case, a pressure-sensitive adhesive layer having a surface with a water contact angle of 110° or less and an arithmetic mean surface roughness Ra of 1.0 μm or less can be easily designed, and it is possible to easily design a pressure-sensitive adhesive layer capable of distinguishing the use of the pressure-sensitive adhesive layer to exhibit relatively high The state of the adhesive force of the radiation-curable adhesive layer and the state of showing a relatively low adhesive force. When a crosslinking agent is used, the amount thereof is preferably about 5 parts by mass or less with respect to 100 parts by mass of the base polymer, and more preferably 0.1 to 5 parts by mass.

丙烯酸系聚合物(使用交联剂的情况下为交联后)的质均分子量优选30万以上(例如30万~140万),更优选为35万以上。质均分子量为30万以上时,有粘合剂层中的低分子量物质少的倾向,能够进一步抑制对粘接剂层、半导体晶圆等的污染。The mass average molecular weight of the acrylic polymer (after crosslinking when a crosslinking agent is used) is preferably 300,000 or more (for example, 300,000 to 1.4 million), and more preferably 350,000 or more. When the mass average molecular weight is 300,000 or more, there is a tendency that there are few low-molecular-weight substances in the adhesive layer, and contamination to the adhesive layer, the semiconductor wafer, and the like can be further suppressed.

粘合剂层可以是在切割芯片接合薄膜的使用过程中能够通过来自外部的作用有意地降低粘合力的粘合剂层(粘合力可降低型粘合剂层),也可以是在切割芯片接合薄膜的使用过程中粘合力几乎或完全不因来自外部的作用降低的粘合剂层(粘合力非降低型粘合剂层),可以根据使用切割芯片接合薄膜进行单片化的半导体晶圆的单片化的方法、条件等来适宜选择。The adhesive layer may be an adhesive layer (adhesive force-reducing type adhesive layer) that can intentionally reduce the adhesive force by an action from the outside during the use of the dicing die-bonding film, or it may be an adhesive layer during the dicing of the die-bonding film. An adhesive layer (adhesive force non-decreasing type adhesive layer) in which the adhesive force is hardly or not reduced by external action during the use of the die-bonding film can be singulated by using the dicing die-bonding film. The method and conditions of the singulation of the semiconductor wafer are appropriately selected.

粘合剂层为粘合力可降低型粘合剂层的情况下,在切割芯片接合薄膜的制造过程、使用过程中,能够区分使用粘合剂层显示相对高的粘合力的状态和显示相对低的粘合力的状态。例如,在切割芯片接合薄膜的制造过程中,在切割带的粘合剂层上贴合粘接剂层时、将切割芯片接合薄膜用于切割工序时利用粘合剂层显示相对高的粘合力的状态能够抑制、防止粘接剂层等被粘物从粘合剂层浮起,另一方面,在其后的用于从切割芯片接合薄膜的切割带拾取带有粘接剂层的半导体芯片的拾取工序中,通过降低粘合剂层的粘合力能够容易地进行拾取。When the pressure-sensitive adhesive layer is a pressure-reducing type pressure-sensitive adhesive layer, it is possible to distinguish between a state in which the pressure-sensitive adhesive layer exhibits relatively high adhesion during the manufacturing process and use of the dicing die-bonding film. A state of relatively low adhesion. For example, in the production process of the dicing die-bonding film, when the adhesive layer is attached to the adhesive layer of the dicing tape, when the dicing die-bonding film is used in the dicing process, the adhesive layer exhibits relatively high adhesion The state of the force can suppress and prevent the adherend such as the adhesive layer from rising from the adhesive layer. On the other hand, the semiconductor with the adhesive layer is picked up from the dicing tape for dicing the die-bonding film. In the pick-up process of a chip, it can pick up easily by reducing the adhesive force of an adhesive layer.

作为形成这种粘合力可降低型粘合剂层的粘合剂,例如可列举出辐射线固化性粘合剂、加热发泡型粘合剂等。作为形成粘合力可降低型粘合剂层的粘合剂,可以仅使用一种粘合剂,也可以使用两种以上粘合剂。As an adhesive which forms such an adhesive force-decreasing-type adhesive layer, a radiation curable adhesive, a heating foaming adhesive, etc. are mentioned, for example. As the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer, only one type of pressure-sensitive adhesive may be used, or two or more types of pressure-sensitive adhesives may be used.

作为上述辐射线固化性粘合剂,例如可以使用通过电子束、紫外线、α射线、β射线、γ射线、或X射线的照射进行固化的类型的粘合剂,特别优选可以使用通过紫外线照射进行固化的类型的粘合剂(紫外线固化性粘合剂)。As the above-mentioned radiation-curable adhesive, for example, a type of adhesive that can be cured by irradiation with electron beams, ultraviolet rays, alpha rays, beta rays, gamma rays, or X rays can be used, and it is particularly preferable to use ultraviolet rays. Cured type of adhesive (UV-curable adhesive).

作为上述辐射线固化性粘合剂,例如可列举出添加型的辐射线固化性粘合剂,其含有:上述丙烯酸系聚合物等基础聚合物、和具有辐射线聚合性的碳-碳双键等官能团的辐射线聚合性的单体成分、低聚物成分。Examples of the radiation-curable adhesive include an additive-type radiation-curable adhesive containing a base polymer such as the above-mentioned acrylic polymer and a carbon-carbon double bond having radiation polymerizability. Radiation polymerizable monomer components and oligomer components with equal functional groups.

作为上述辐射线聚合性的单体成分,可列举例如:氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。Examples of the radiation polymerizable monomer component include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetrakis (meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, and the like.

作为上述辐射线聚合性的低聚物成分,例如,可列举出氨基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各种低聚物,优选分子量为100~30000左右者。Examples of the radiation polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers, and the molecular weight is preferred. It is about 100 to 30,000.

形成粘合剂层的辐射线固化性粘合剂中的上述辐射线固化性的单体成分及低聚物成分的含量相对于上述基础聚合物100质量份例如为5~500质量份,优选为40~150质量份左右。The content of the radiation-curable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive forming the pressure-sensitive adhesive layer is, for example, 5 to 500 parts by mass, preferably 5 to 500 parts by mass relative to 100 parts by mass of the base polymer. About 40 to 150 parts by mass.

另外,作为添加型的辐射线固化性粘合剂,可以使用例如日本特开昭60-196956号公报中公开的物质。In addition, as an additive type radiation-curable adhesive, for example, those disclosed in Japanese Unexamined Patent Publication No. Sho 60-196956 can be used.

作为上述辐射线固化性粘合剂,也可列举出内在型的辐射线固化性粘合剂,其含有在聚合物侧链、聚合物主链中、聚合物主链末端具有辐射线聚合性的碳-碳双键等官能团的基础聚合物。若使用这种内在型的辐射线固化性粘合剂,则有能够抑制形成的粘合剂层内的低分子量成分的移动所引起的粘合特性的不期望的经时变化的倾向。Examples of the above radiation-curable adhesive include intrinsically-type radiation-curable adhesives containing a radiation-polymerizable adhesive in the side chain of the polymer, in the main chain of the polymer, and at the end of the main chain of the polymer. Base polymer for functional groups such as carbon-carbon double bonds. Use of such an intrinsic radiation-curable adhesive tends to suppress undesired changes in adhesive properties over time due to migration of low-molecular-weight components in the formed adhesive layer.

作为上述内在型的辐射线固化性粘合剂中含有的基础聚合物,优选丙烯酸系聚合物。作为辐射线聚合性的碳-碳双键向丙烯酸系聚合物中的导入方法,例如可列举出如下方法:使包含上述具有第1官能团的单体成分的原料单体聚合(共聚)而得到丙烯酸系聚合物后,使具有上述第2官能团及辐射线聚合性的碳-碳双键的化合物在维持碳-碳双键的辐射线聚合性的情况下与丙烯酸系聚合物进行缩合反应或加成反应。As the base polymer contained in the above-mentioned intrinsic radiation-curable adhesive, an acrylic polymer is preferable. As a method for introducing a radiation polymerizable carbon-carbon double bond into an acrylic polymer, for example, a method in which acrylic acid is obtained by polymerizing (copolymerizing) a raw material monomer containing the monomer component having the first functional group described above may be mentioned. After the polymer, a compound having the above-mentioned second functional group and a radiation polymerizable carbon-carbon double bond is subjected to a condensation reaction or addition to the acrylic polymer while maintaining the radiation polymerizability of the carbon-carbon double bond reaction.

上述辐射线固化性粘合剂优选含有光聚合引发剂。作为上述光聚合引发剂,可列举例如:α-酮醇类化合物、苯乙酮类化合物、苯偶姻醚类化合物、缩酮类化合物、芳香族磺酰氯类化合物、光活性肟类化合物、二苯甲酮类化合物、噻吨酮类化合物、樟脑醌、卤代酮、酰基氧化膦、酰基膦酸酯等。It is preferable that the said radiation curable adhesive contains a photoinitiator. Examples of the above-mentioned photopolymerization initiator include α-ketoalcohol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, Benzophenone compounds, thioxanthone compounds, camphorquinone, halogenated ketones, acyl phosphine oxides, acyl phosphonates, etc.

作为上述α-酮醇类化合物,可列举例如:4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、α-羟基-α,α’-二甲基苯乙酮、2-甲基-2-羟基苯丙酮、1-羟基环己基苯基酮等。Examples of the above-mentioned α-ketoalcohol compounds include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylbenzene Ethanone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone, etc.

作为上述苯乙酮类化合物,可列举例如:甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-吗啉代丙烷-1-酮等。As said acetophenone compound, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2- Methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropan-1-one, etc.

作为上述苯偶姻醚类化合物,可列举例如:苯偶姻乙醚、苯偶姻异丙醚、茴香偶姻甲醚等。作为上述缩酮类化合物,可列举例如:苯偶酰二甲基缩酮等。As said benzoin ether type compound, benzoin ethyl ether, benzoin isopropyl ether, anisin methyl ether, etc. are mentioned, for example. As said ketal type compound, benzil dimethyl ketal etc. are mentioned, for example.

作为上述芳香族磺酰氯类化合物,可列举例如:2-萘磺酰氯等。作为上述光活性肟类化合物,可列举例如:1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟等。As said aromatic sulfonyl chloride type compound, 2-naphthalenesulfonyl chloride etc. are mentioned, for example. As said photoactive oxime type compound, 1-phenyl-1, 2- propanedione-2-(O-ethoxycarbonyl) oxime etc. are mentioned, for example.

作为上述二苯甲酮类化合物,可列举例如:二苯甲酮、苯甲酰基苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等。As said benzophenone type compound, benzophenone, benzoylbenzoic acid, 3,3'-dimethyl-4-methoxybenzophenone etc. are mentioned, for example.

作为上述噻吨酮类化合物,可列举例如:噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2,4-二甲基噻吨酮、异丙基噻吨酮、2,4-二氯噻吨酮、2,4-二乙基噻吨酮、2,4-二异丙基噻吨酮等。As said thioxanthone compound, for example: thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2 , 4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, etc.

辐射线固化性粘合剂中的光聚合引发剂的含量相对于基础聚合物100质量份例如为0.05~20质量份。The content of the photopolymerization initiator in the radiation-curable adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer.

上述加热发泡型粘合剂是含有通过加热而发泡、膨胀的成分(发泡剂、热膨胀性微球等)的粘合剂。The above-mentioned heating-foaming-type adhesive is an adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams and expands by heating.

作为上述发泡剂,可列举各种无机系发泡剂、有机系发泡剂。作为上述无机系发泡剂,可列举例如:碳酸铵、碳酸氢铵、碳酸氢钠、亚硝酸铵、硼氢化钠、叠氮化物类等。作为上述有机系发泡剂,可列举例如:三氯一氟甲烷、二氯一氟甲烷等氯氟代烷烃;偶氮双异丁腈、偶氮二甲酰胺、偶氮二甲酸钡等偶氮类化合物;对甲苯磺酰肼、二苯基砜-3,3’-二磺酰肼、4,4’-氧代双苯磺酰肼、烯丙基双磺酰肼等肼类化合物;对甲苯磺酰基氨基脲、4,4’-氧代双(苯磺酰基氨基脲)等氨基脲类化合物;5-吗啉基-1,2,3,4-噻三唑等三唑类化合物;N,N’-二亚硝基五亚甲基四胺、N,N’-二甲基-N,N’-二亚硝基对苯二甲酰胺等N-亚硝基类化合物等。As said foaming agent, various inorganic foaming agents and organic foaming agents are mentioned. As said inorganic foaming agent, ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, azides, etc. are mentioned, for example. Examples of the organic foaming agent include: chlorofluoroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane; Compounds; hydrazine compounds such as p-toluenesulfonyl hydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxobisbenzenesulfonylhydrazide, allylbissulfonylhydrazide; p- Semicarbazide compounds such as tosyl semicarbazide and 4,4'-oxobis(benzenesulfonyl semicarbazide); triazole compounds such as 5-morpholino-1,2,3,4-thitriazole; N-nitroso compounds such as N,N'-dinitrosopentamethylenetetramine, N,N'-dimethyl-N,N'-dinitrosoterephthalamide, etc.

作为上述热膨胀性微球,可列举例如构成为壳内内包有通过加热容易气化、膨胀的物质的微球。作为上述通过加热容易气化、膨胀的物质,可列举例如:异丁烷、丙烷、戊烷等。通过利用凝聚法、界面聚合法等将通过加热容易气化、膨胀的物质内包到壳形成物质内,从而能够制作热膨胀性微球。作为上述壳形成物质,可以使用显示热熔融性的物质、可通过内包物质的热膨胀作用而破裂的物质。作为这种物质,可列举例如:偏氯乙烯·丙烯腈共聚物、聚乙烯醇、聚乙烯醇缩丁醛、聚甲基丙烯酸甲酯、聚丙烯腈、聚偏氯乙烯、聚砜等。As said heat-expandable microsphere, the microsphere comprised in the shell which encloses the substance which is easy to vaporize and expand|swell by heating is mentioned, for example. Examples of the above-mentioned substances that are easily vaporized and expanded by heating include isobutane, propane, and pentane. Heat-expandable microspheres can be produced by enclosing a substance that is easily vaporized and expanded by heating in a shell-forming substance by a coacervation method, an interfacial polymerization method, or the like. As the above-mentioned shell-forming substance, a substance that exhibits thermal fusion properties and a substance that can be ruptured by thermal expansion of an encapsulated substance can be used. As such a substance, a vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone, etc. are mentioned, for example.

作为上述粘合力非降低型粘合剂层,可列举例如压敏型粘合剂层。需要说明的是,压敏型粘合剂层包括如下形态的粘合剂层:通过预先照射辐射线使由粘合力可降低型粘合剂层中记载的辐射线固化性粘合剂形成的粘合剂层固化但仍具有一定的粘合力。作为形成粘合力非降低型粘合剂层的粘合剂,既可以使用一种粘合剂,也可以使用两种以上粘合剂。As said adhesive force non-decreasing-type adhesive layer, a pressure-sensitive adhesive layer is mentioned, for example. In addition, the pressure-sensitive pressure-sensitive adhesive layer includes a pressure-sensitive adhesive layer of a form formed of the radiation-curable pressure-sensitive adhesive described in the adhesive force-reducing type pressure-sensitive adhesive layer by irradiating radiation in advance. The adhesive layer cured but still had some adhesion. As an adhesive for forming the adhesive force non-decreasing type adhesive layer, one type of adhesive may be used, or two or more types of adhesive may be used.

另外,既可以是粘合剂层的整体为粘合力非降低型粘合剂层,也可以是一部分为粘合力非降低型粘合剂层。例如,在粘合剂层具有单层结构时,既可以是粘合剂层的整体为粘合力非降低型粘合剂层,也可以是粘合剂层中的规定部位(例如作为环形框的粘贴对象区域的位于中央区域的外侧的区域)为粘合力非降低型粘合剂层、其它部位(例如作为半导体晶圆的粘贴对象区域的中央区域)为粘合力可降低型粘合剂层。In addition, the whole adhesive layer may be an adhesive force non-decreasing type adhesive layer, or a part may be an adhesive force non-adhesive force non-decreasing type adhesive layer. For example, when the pressure-sensitive adhesive layer has a single-layer structure, the entire pressure-sensitive adhesive layer may be the pressure-sensitive adhesive layer without reducing the adhesive force, or a predetermined portion (eg, a ring frame) in the pressure-sensitive adhesive layer may be used. The area on the outside of the central area of the pasting target area) is the non-adhesion-reducing type adhesive layer, and other parts (for example, the central area of the pasting target area of the semiconductor wafer) are the adhesive force-reducing type adhesive layer. agent layer.

在粘合剂层具有层叠结构时,既可以是层叠结构中的全部粘合剂层为粘合力非降低型粘合剂层,也可以是层叠结构中的一部分粘合剂层为粘合力非降低型粘合剂层。When the pressure-sensitive adhesive layer has a laminated structure, all of the pressure-sensitive adhesive layers in the laminated structure may be non-adhesive pressure-sensitive adhesive layers, or a part of the pressure-sensitive adhesive layers in the laminated structure may be the pressure-sensitive adhesive layer. Non-reduced adhesive layer.

预先通过辐射线照射使由辐射线固化性粘合剂形成的粘合剂层(辐射线未照射辐射线固化型粘合剂层)固化的形态的粘合剂层(辐射线照射完的辐射线固化型粘合剂层)虽然通过照射辐射线而粘合力降低,但仍显示出起因于所含的聚合物成分的粘合性,能够在切割工序等中使切割带的粘合剂层发挥最低限度的粘合力。A pressure-sensitive adhesive layer in a form in which a radiation-curable pressure-sensitive adhesive layer (a radiation-irradiated radiation-curable pressure-sensitive adhesive layer) is previously cured by irradiation with radiation (radiation-irradiated Curable pressure-sensitive adhesive layer) Although the adhesive force is reduced by irradiation with radiation, the adhesiveness due to the contained polymer component is exhibited, and the pressure-sensitive adhesive layer of the dicing tape can be exerted in the dicing process and the like. Minimal adhesion.

使用辐射线照射完的辐射线固化型粘合剂层的情况下,可以在粘合剂层的面扩展方向上粘合剂层的整体为辐射线照射完的辐射线固化型粘合剂层,也可以粘合剂层的一部分为辐射线照射完的辐射线固化型粘合剂层并且其他部分为辐射线未照射的辐射线固化型粘合剂层。In the case of using a radiation-curable adhesive layer irradiated with radiation, the entire adhesive layer may be a radiation-curable adhesive layer irradiated with radiation in the surface expansion direction of the adhesive layer, A part of the pressure-sensitive adhesive layer may be a radiation-curable pressure-sensitive adhesive layer to which radiation has been irradiated, and the other part may be a radiation-curable pressure-sensitive adhesive layer not irradiated with radiation.

需要说明的是,本说明书中,“辐射线固化型粘合剂层”是指由辐射线固化性粘合剂形成的粘合剂层,包括具有辐射线固化性的辐射线未照射辐射线固化型粘合剂层及该粘合剂层通过辐射线照射进行固化后的辐射线固化完的辐射线固化型粘合剂层这两者。In addition, in this specification, "radiation-curable adhesive layer" refers to an adhesive layer formed of a radiation-curable adhesive, including radiation-curable radiation-irradiated non-radiation-curable adhesives Both the adhesive layer and the radiation-curable adhesive layer after the adhesive layer is cured by radiation irradiation.

作为形成上述压敏型粘合剂层的粘合剂,可以使用公知或惯用的压敏型的粘合剂,可以优选使用以丙烯酸系聚合物为基础聚合物的丙烯酸系粘合剂、橡胶类粘合剂。当粘合剂层含有丙烯酸系聚合物作为压敏型的粘合剂时,该丙烯酸系聚合物优选为含有源自(甲基)丙烯酸酯的构成单元作为质量比例最多的构成单元的聚合物。作为上述丙烯酸系聚合物,可以采用例如作为上述粘合剂层中可含有的丙烯酸系聚合物而说明的丙烯酸系聚合物。As the pressure-sensitive pressure-sensitive pressure-sensitive pressure-sensitive pressure-sensitive pressure-sensitive pressure-sensitive pressure-sensitive adhesive layer, known or conventional pressure-sensitive pressure-sensitive pressure-sensitive pressure-sensitive pressure-sensitive adhesive can be used, acrylic pressure-sensitive adhesives based on acrylic polymers, rubber-based adhesives can be preferably used adhesive. When the adhesive layer contains an acrylic polymer as a pressure-sensitive adhesive, the acrylic polymer is preferably a polymer containing a constitutional unit derived from a (meth)acrylate as the constitutional unit having the largest mass ratio. As said acrylic polymer, the acrylic polymer demonstrated as an acrylic polymer which can be contained in the said adhesive layer, for example can be employ|adopted.

粘合剂层或形成粘合剂层的粘合剂除了上述各成分以外还可以配混交联促进剂、增粘剂、防老剂、着色剂(颜料、染料等)等公知或惯用的用于粘合剂层的添加剂。The pressure-sensitive adhesive layer or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer may be compounded, in addition to the above components, known or conventionally used for adhesion, such as crosslinking accelerators, tackifiers, antioxidants, colorants (pigments, dyes, etc.). Additives for the mixture layer.

作为上述着色剂,可列举例如通过照射辐射线而产生着色的化合物。当含有通过照射辐射线而产生着色的化合物时,能够仅使被辐射线照射的部分着色。上述通过照射辐射线而产生着色的化合物为在照射辐射线前为无色或浅色、通过照射辐射线而变为有色的化合物,例如可列举隐色染料等。对上述通过照射辐射线而产生着色的化合物的用量没有特别限定,可以适宜选择。As said coloring agent, the compound which produces coloration by irradiation with radiation is mentioned, for example. When a compound that is colored by irradiation with radiation is contained, only the portion irradiated with radiation can be colored. The compound which is colored by irradiation with radiation is colorless or light-colored before irradiation with radiation, and becomes colored by irradiation with radiation, and examples thereof include leuco dyes and the like. The usage-amount of the said compound which produces coloring by irradiation with radiation is not specifically limited, It can select suitably.

对粘合剂层的厚度没有特别限定,当粘合剂层为由辐射线固化性粘合剂形成的粘合剂层时,从取得该粘合剂层在辐射线固化前后对粘接剂层的粘接力平衡的观点出发,优选为1~50μm左右,更优选为2~30μm,进一步优选为5~25μm。The thickness of the adhesive layer is not particularly limited, and when the adhesive layer is an adhesive layer formed of a radiation-curable adhesive, the adhesive layer is obtained from the adhesive layer before and after radiation curing. From the viewpoint of the balance of the adhesive force, the thickness is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and even more preferably 5 to 25 μm.

(粘接剂层)(adhesive layer)

粘接剂层具有作为芯片接合用的显示热固化性的粘接剂的功能,进而根据需要兼有用于保持半导体晶圆等工件和环形框等框构件的粘合功能。粘接剂层能够通过施加拉伸应力而割断,通过施加拉伸应力将其割断来使用。The adhesive layer functions as a thermosetting adhesive for die bonding, and also functions as an adhesive for holding workpieces such as semiconductor wafers and frame members such as ring frames as necessary. An adhesive bond layer can be cut|disconnected by applying a tensile stress, and it can be used by cutting|disconnecting it by applying a tensile stress.

粘接剂层和构成粘接剂层的粘接剂可以含有热固化性树脂和例如作为粘结剂成分的热塑性树脂,也可以含有具有热固化性官能团的热塑性树脂,所述热固化性官能团能够与固化剂反应而发生键合。当构成粘接剂层的粘接剂含有具有热固化性官能团的热塑性树脂时,该粘接剂不必包含热固化性树脂(环氧树脂等)。粘接剂层既可以具有单层结构也可以具有多层结构。The adhesive layer and the adhesive constituting the adhesive layer may contain a thermosetting resin and, for example, a thermoplastic resin as a binder component, or may contain a thermoplastic resin having a thermosetting functional group capable of Bonding occurs by reaction with the curing agent. When the adhesive constituting the adhesive layer contains a thermoplastic resin having a thermosetting functional group, the adhesive does not necessarily contain a thermosetting resin (epoxy resin or the like). The adhesive bond layer may have a single-layer structure or a multilayer structure.

作为上述热塑性树脂,可列举例如:天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、6-尼龙和6,6-尼龙等聚酰胺树脂、苯氧基树脂、丙烯酸类树脂、PET、PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、氟树脂等。上述热塑性树脂既可以仅使用一种也可以使用两种以上。作为上述热塑性树脂,从离子性杂质少且耐热性高、从而容易确保利用粘接剂层的接合可靠性的理由出发,优选丙烯酸类树脂。As said thermoplastic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene can be mentioned, for example. Vinyl resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET, PBT, polyamide amide imine resin, fluororesin, etc. Only one kind of the above-mentioned thermoplastic resins may be used, or two or more kinds thereof may be used. As the thermoplastic resin, an acrylic resin is preferable because there are few ionic impurities and high heat resistance, and it is easy to secure the bonding reliability by the adhesive bond layer.

上述丙烯酸系树脂优选含有源自含烃基(甲基)丙烯酸酯的构成单元作为质量比例最多的构成单元。作为该含烃基(甲基)丙烯酸酯,可列举例如:作为形成在上述粘合剂层中可含有的丙烯酸系聚合物的含烃基(甲基)丙烯酸酯而例示的含烃基(甲基)丙烯酸酯。It is preferable that the said acrylic resin contains the structural unit derived from a hydrocarbon group-containing (meth)acrylate as a structural unit with the largest mass ratio. As the hydrocarbon group-containing (meth)acrylate, for example, the hydrocarbon group-containing (meth)acrylic acid exemplified as the hydrocarbon group-containing (meth)acrylate of the acrylic polymer that can be contained in the pressure-sensitive adhesive layer may be mentioned. ester.

上述丙烯酸类树脂也可以含有源自能够与含烃基(甲基)丙烯酸酯共聚的其它单体成分的构成单元。作为上述其它单体成分,可列举例如:含羧基单体;酸酐单体;含羟基单体;含缩水甘油基单体;含磺酸基单体;含磷酸基单体;丙烯酰胺、丙烯腈等含有官能团的单体;各种多官能性单体等,具体而言,可以使用作为构成在上述粘合剂层中可含有的丙烯酸系聚合物的其它单体成分而例示的单体成分。The said acrylic resin may contain the structural unit derived from the other monomer component which can be copolymerized with the hydrocarbon group-containing (meth)acrylate. Examples of the above-mentioned other monomer components include: carboxyl group-containing monomer; acid anhydride monomer; hydroxyl group-containing monomer; glycidyl group-containing monomer; sulfonic acid group-containing monomer; phosphoric acid group-containing monomer; acrylamide, acrylonitrile Functional group-containing monomers, etc.; various polyfunctional monomers, etc. Specifically, the monomer components exemplified as other monomer components constituting the acrylic polymer that can be contained in the pressure-sensitive adhesive layer can be used.

当粘接剂层含有热塑性树脂和热固化性树脂时,作为该热固化性树脂,可列举例如:环氧树脂、酚醛树脂、氨基树脂、不饱和聚酯树脂、聚氨基甲酸酯树脂、有机硅树脂、热固化性聚酰亚胺树脂等。上述热固化性树脂既可以仅使用一种也可以使用两种以上。从具有可能会导致芯片接合对象即半导体芯片腐蚀的离子性杂质等的含量少的倾向的理由出发,作为上述热固化性树脂,优选环氧树脂。另外,作为环氧树脂的固化剂,优选酚醛树脂。When the adhesive layer contains a thermoplastic resin and a thermosetting resin, examples of the thermosetting resin include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, organic resins Silicone resin, thermosetting polyimide resin, etc. As for the said thermosetting resin, only 1 type may be used and 2 or more types may be used. The above-mentioned thermosetting resin is preferably an epoxy resin because there is a tendency that the content of ionic impurities, etc., which may cause corrosion of a semiconductor chip, which is an object of die bonding, is small. Moreover, as a hardening|curing agent of an epoxy resin, a phenol resin is preferable.

作为上述环氧树脂,可列举例如:双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、苯酚酚醛清漆型、邻甲酚酚醛清漆型、三羟苯基甲烷型、四(苯基羟基)乙烷(Tetraphenylolethane)型、乙内酰脲型、异氰脲酸三缩水甘油酯型、缩水甘油胺型的环氧树脂等。其中由于与作为固化剂的酚醛树脂富有反应性且耐热性优异而优选酚醛清漆型环氧树脂、联苯型环氧树脂、三羟苯基甲烷型环氧树脂、四(苯基羟基)乙烷型环氧树脂。As said epoxy resin, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, Fluorene type, phenol novolak type, o-cresol novolac type, trishydroxyphenylmethane type, tetraphenylolethane type, hydantoin type, triglycidyl isocyanurate type , Glycidylamine type epoxy resin, etc. Among them, novolak-type epoxy resins, biphenyl-type epoxy resins, trishydroxyphenylmethane-type epoxy resins, tetrakis(phenylhydroxy)ethyl Alkyl epoxy resin.

对于可作为环氧树脂的固化剂发挥作用的酚醛树脂,可列举例如:酚醛清漆型酚醛树脂、甲阶型酚醛树脂、聚对氧苯乙烯等聚氧苯乙烯等。作为酚醛清漆型酚醛树脂,可列举例如:苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等。上述酚醛树脂既可以仅使用一种也可以使用两种以上。其中,从用作作为芯片接合用粘接剂的环氧树脂的固化剂时有提高该粘接剂的连接可靠性的倾向的观点出发,优选苯酚酚醛清漆树脂、苯酚芳烷基树脂。As a phenolic resin which can function as a hardening|curing agent of an epoxy resin, a novolac-type phenolic resin, a resol-type phenolic resin, polyoxystyrene, such as polyparaoxystyrene, etc. are mentioned, for example. As a novolak-type phenolic resin, a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a t-butylphenol novolak resin, a nonylphenol novolak resin, etc. are mentioned, for example. As for the said phenol resin, only 1 type may be used and 2 or more types may be used. Among them, phenol novolac resins and phenol aralkyl resins are preferred from the viewpoint of the tendency to improve the connection reliability of the adhesive when used as a curing agent for an epoxy resin as an adhesive for die bonding.

在粘接剂层中,从使环氧树脂和酚醛树脂的固化反应充分进行的观点出发,以使酚醛树脂中的羟基相对于环氧树脂成分中的环氧基1当量达到优选0.5~2.0当量、更优选0.7~1.5当量的量来包含该酚醛树脂。In the adhesive bond layer, from the viewpoint of sufficiently advancing the curing reaction of the epoxy resin and the phenolic resin, the hydroxyl group in the phenolic resin is preferably 0.5 to 2.0 equivalents relative to 1 equivalent of the epoxy group in the epoxy resin component. , More preferably, the phenolic resin is contained in an amount of 0.7 to 1.5 equivalents.

当粘接剂层含有热固化性树脂时,关于上述热固化性树脂的含有比例,从使粘接剂层适宜地表现出作为热固化型粘接剂的功能的观点出发,相对于粘接剂层的总质量优选为5~60质量%,更优选为10~50质量%。When the adhesive layer contains a thermosetting resin, the content ratio of the above-mentioned thermosetting resin is relative to the adhesive from the viewpoint of appropriately exhibiting the function as a thermosetting adhesive in the adhesive layer. The total mass of the layers is preferably 5 to 60 mass %, more preferably 10 to 50 mass %.

当粘接剂层含有具有热固化性官能团的热塑性树脂时,作为该热塑性树脂,可以使用例如含热固化性官能团的丙烯酸类树脂。该含热固化性官能团的丙烯酸类树脂中的丙烯酸类树脂优选含有源自含烃基(甲基)丙烯酸酯的构成单元作为质量比例最多的构成单元。作为该含烃基(甲基)丙烯酸酯,可列举例如:作为形成上述粘合剂层中可含有的丙烯酸系聚合物的含烃基(甲基)丙烯酸酯而例示的含烃基(甲基)丙烯酸酯。When the adhesive bond layer contains a thermoplastic resin having a thermosetting functional group, as the thermoplastic resin, for example, a thermosetting functional group-containing acrylic resin can be used. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth)acrylate as the structural unit having the largest mass ratio. As the hydrocarbon group-containing (meth)acrylate, for example, the hydrocarbon group-containing (meth)acrylate exemplified as the hydrocarbon group-containing (meth)acrylate that forms the acrylic polymer that can be contained in the pressure-sensitive adhesive layer may be mentioned. .

另一方面,作为含热固化性官能团的丙烯酸类树脂中的热固化性官能团,可列举例如:缩水甘油基、羧基、羟基、异氰酸酯基等。其中优选缩水甘油基、羧基。即,作为含热固化性官能团的丙烯酸类树脂,特别优选含缩水甘油基的丙烯酸类树脂、含羧基丙烯酸类树脂。另外,优选与含热固化性官能团的丙烯酸类树脂一起含有固化剂,作为该固化剂,可列举例如:作为上述粘合剂层形成用的辐射线固化性粘合剂中可含有的交联剂而例示的交联剂。当含热固化性官能团的丙烯酸类树脂中的热固化性官能团为缩水甘油基时,优选使用多酚类化合物作为固化剂,例如可以使用上述各种酚醛树脂。On the other hand, as a thermosetting functional group in a thermosetting functional group containing acrylic resin, a glycidyl group, a carboxyl group, a hydroxyl group, an isocyanate group etc. are mentioned, for example. Among them, a glycidyl group and a carboxyl group are preferable. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin and a carboxyl group-containing acrylic resin are particularly preferable. In addition, it is preferable to contain a curing agent together with the thermosetting functional group-containing acrylic resin, and examples of the curing agent include a crosslinking agent that can be contained in the radiation-curable adhesive for forming the adhesive layer described above, for example. and the exemplified crosslinking agent. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol-based compound is preferably used as a curing agent, and for example, the various phenol resins described above can be used.

关于为了芯片接合而固化之前的粘接剂层,为了实现某种程度的交联度,例如优选在粘接剂层形成用树脂组合物中预先配混能够与粘接剂层中可含有的上述树脂的分子链末端的官能团等反应而键合的多官能性化合物作为交联成分。这种构成从提高粘接剂层在高温下的粘接特性的观点、以及实现耐热性的改善的观点出发是优选的。Regarding the adhesive layer before curing for die bonding, in order to achieve a certain degree of crosslinking, it is preferable to preliminarily mix, for example, the above-mentioned resin composition for adhesive layer formation that can be contained in the adhesive layer. The polyfunctional compound which reacts and couple|bonds the functional group etc. of the molecular chain terminal of resin as a crosslinking component. Such a configuration is preferable from the viewpoint of improving the adhesive properties of the adhesive bond layer at high temperatures and from the viewpoint of achieving improvement in heat resistance.

作为上述交联成分,可列举例如:多异氰酸酯化合物。作为多异氰酸酯化合物,可列举例如:甲苯二异氰酸酯、二苯基甲烷二异氰酸酯、对苯二异氰酸酯、1,5-萘二异氰酸酯、多元醇和二异氰酸酯的加成物等。另外,作为上述交联成分,可以将环氧树脂等其它多官能性化合物与多异氰酸酯化合物组合使用。As said crosslinking component, a polyisocyanate compound is mentioned, for example. As a polyisocyanate compound, the adduct of toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5- naphthalene diisocyanate, polyol, and diisocyanate, etc. are mentioned, for example. Moreover, as the said crosslinking component, other polyfunctional compounds, such as an epoxy resin, can be used in combination with a polyisocyanate compound.

对于粘接剂层形成用树脂组合物中的交联成分的含量,相对于具有可与该交联成分反应并键合的上述官能团的树脂100质量份,从形成的粘接剂层的内聚力提高的观点出发,优选0.05质量份以上,从形成的粘接剂层的粘接力提高的观点出发,优选7质量份以下。The content of the cross-linking component in the resin composition for forming an adhesive layer is improved from the cohesive force of the formed adhesive layer with respect to 100 parts by mass of the resin having the above-mentioned functional group capable of reacting and bonding with the cross-linking component. From the viewpoint of this, it is preferably 0.05 parts by mass or more, and from the viewpoint of improving the adhesive strength of the adhesive layer to be formed, it is preferably 7 parts by mass or less.

粘接剂层优选含有填料。通过向粘接剂层中配混填料,能够调整粘接剂层的导电性、热传导性、弹性模量等物性。作为填料,可列举无机填料和有机填料,特别优选无机填料。The adhesive bond layer preferably contains a filler. Physical properties such as electrical conductivity, thermal conductivity, and elastic modulus of the adhesive bond layer can be adjusted by blending the filler with the adhesive bond layer. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are particularly preferred.

作为无机填料,可列举例如:氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、钙氧化物、镁氧化物、铝氧化物、铝氮化物、硼酸铝晶须、氮化硼、结晶二氧化硅、非晶二氧化硅;以及铝、金、银、铜、镍等金属单质、合金;无定形碳黑、石墨等。填料可以具有球状、针状、薄片状等各种形状。作为上述填料,既可以仅使用一种也可以使用两种以上。Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whiskers. , boron nitride, crystalline silica, amorphous silica; and metal elements and alloys such as aluminum, gold, silver, copper, nickel, etc.; amorphous carbon black, graphite, etc. The filler may have various shapes such as spherical shape, needle shape, and flake shape. As said filler, only 1 type may be used and 2 or more types may be used.

上述填料的平均粒径优选为0.005~10μm,更优选为0.005~1μm。当上述平均粒径为0.005μm以上时,对半导体晶圆等被粘物的润湿性、粘接性进一步提高。当上述平均粒径为10μm以下时,能够使为了赋予上述各特性而加入的填料的效果充分发挥,并且能够确保耐热性。需要说明的是,填料的平均粒径例如可以使用光度式粒度分布计(例如商品名“LA-910”、株式会社堀场制作所制)求出。The average particle diameter of the above-mentioned filler is preferably 0.005 to 10 μm, and more preferably 0.005 to 1 μm. When the said average particle diameter is 0.005 micrometer or more, the wettability and adhesiveness with respect to to-be-adhered bodies, such as a semiconductor wafer, are further improved. When the said average particle diameter is 10 micrometers or less, the effect of the filler added in order to provide each characteristic mentioned above can be fully exhibited, and heat resistance can be ensured. In addition, the average particle diameter of a filler can be calculated|required using, for example, a photometric particle size distribution meter (for example, brand name "LA-910", the product made by Horiba Co., Ltd.).

粘接剂层可以根据需要而含有其它成分。作为上述其它成分,可列举例如:固化催化剂、阻燃剂、硅烷偶联剂、离子捕获剂、染料等。上述其他添加剂可以仅使用一种,也可以使用两种以上。The adhesive bond layer may contain other components as needed. As said other components, a hardening catalyst, a flame retardant, a silane coupling agent, an ion trapping agent, a dye etc. are mentioned, for example. Only one type of the above-mentioned other additives may be used, or two or more types may be used.

作为上述阻燃剂,可列举例如:三氧化锑、五氧化锑、溴化环氧树脂等。As said flame retardant, an antimony trioxide, an antimony pentoxide, a brominated epoxy resin etc. are mentioned, for example.

作为上述硅烷偶联剂,可列举例如:β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。As said silane coupling agent, for example, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxy propylpropylmethyldiethoxysilane, etc.

作为上述离子捕获剂,可列举例如:水滑石类、氢氧化铋、水合氧化锑(例如东亚合成株式会社制的“IXE-300”)、特定结构的磷酸锆(例如东亚合成株式会社制的“IXE-100”)、硅酸镁(例如协和化学工业株式会社制的“Kyoward 600”)、硅酸铝(例如协和化学工业株式会社制的“Kyoward 700”)等。Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, hydrated antimony oxide (for example, "IXE-300" manufactured by Toagosei Co., Ltd.), and zirconium phosphate with a specific structure (for example, "Toagosei Co., Ltd." IXE-100"), magnesium silicate (for example, "Kyoward 600" produced by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (for example, "Kyoward 700" produced by Kyowa Chemical Industry Co., Ltd.), and the like.

也可以使用能够与金属离子之间形成络合物的化合物作为离子捕获剂。作为这种化合物,可列举例如:三唑类化合物、四唑类化合物、联吡啶类化合物。这些中,从与金属离子之间形成的络合物的稳定性的观点出发,优选三唑类化合物。Compounds capable of forming complexes with metal ions can also be used as ion traps. As such a compound, a triazole type compound, a tetrazole type compound, and a bipyridine type compound are mentioned, for example. Among these, from the viewpoint of the stability of the complex formed with the metal ion, triazole-based compounds are preferred.

作为上述三唑类化合物,可列举例如:1,2,3-苯并三唑、1-{N,N-双(2-乙基己基)氨基甲基}苯并三唑、羧基苯并三唑、2-(2-羟基-5-甲基苯基)苯并三唑、2-(2-羟基-3,5-二叔丁基苯基)-5-氯苯并三唑、2-(2-羟基-3-叔丁基-5-甲基苯基)-5-氯苯并三唑、2-(2-羟基-3,5-二叔戊基苯基)苯并三唑、2-(2-羟基-5-叔辛基苯基)苯并三唑、6-(2-苯并三唑基)-4-叔辛基-6’-叔丁基-4’-甲基-2,2’-亚甲基双酚、1-(2’,3’-羟基丙基)苯并三唑、1-(1,2-二羧基二乙基)苯并三唑、1-(2-乙基己基氨基甲基)苯并三唑、2,4-二叔戊基-6-{(H-苯并三唑-1-基)甲基}苯酚、2-(2-羟基-5-叔丁基苯基)-2H-苯并三唑、3-(2H-苯并三唑-2-基)-5-(1,1-二甲基乙基)-4-羟基、3-[3-叔丁基-4-羟基-5-(5-氯-2H-苯并三唑-2-基)苯基]丙酸辛酯、3-[3-叔丁基-4-羟基-5-(5-氯-2H-苯并三唑-2-基)苯基]丙酸2-乙基己酯、2-(2H-苯并三唑-2-基)-6-(1-甲基-1-苯乙基)-4-(1,1,3,3-四甲基丁基)苯酚、2-(2H-苯并三唑-2-基)-4-叔丁基苯酚、2-(2-羟基-5-甲基苯基)苯并三唑、2-(2-羟基-5-叔辛基苯基)-苯并三唑、2-(3-叔丁基-2-羟基-5-甲基苯基)-5-氯苯并三唑、2-(2-羟基-3,5-二叔戊基苯基)苯并三唑、2-(2-羟基-3,5-二叔丁基苯基)-5-氯-苯并三唑、2-[2-羟基-3,5-二(1,1-二甲基苄基)苯基]-2H-苯并三唑、2,2’-亚甲基双[6-(2H-苯并三唑-2-基)-4-(1,1,3,3-四甲基丁基)苯酚]、2-[2-羟基-3,5-双(α,α-二甲基苄基)苯基]-2H-苯并三唑、3-[3-(2H-苯并三唑-2-基)-5-叔丁基-4-羟基苯基]丙酸甲基酯等。As said triazole type compound, 1,2,3- benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, carboxybenzotriazole, for example azole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole, 2- (2-Hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-amylphenyl)benzotriazole, 2-(2-Hydroxy-5-tert-octylphenyl)benzotriazole, 6-(2-benzotriazolyl)-4-tert-octyl-6'-tert-butyl-4'-methyl -2,2'-methylenebisphenol, 1-(2',3'-hydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl)benzotriazole, 1- (2-Ethylhexylaminomethyl)benzotriazole, 2,4-di-tert-amyl-6-{(H-benzotriazol-1-yl)methyl}phenol, 2-(2-hydroxyl) -5-tert-butylphenyl)-2H-benzotriazole, 3-(2H-benzotriazol-2-yl)-5-(1,1-dimethylethyl)-4-hydroxy, Octyl 3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propanoate, 3-[3-tert-butyl-4-hydroxy -5-(5-Chloro-2H-benzotriazol-2-yl)phenyl]propionic acid 2-ethylhexyl ester, 2-(2H-benzotriazol-2-yl)-6-(1 -Methyl-1-phenethyl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-tert-butyl Phenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-5-tert-octylphenyl)-benzotriazole, 2-(3-tert-butyl -2-Hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-amylphenyl)benzotriazole, 2-(2-hydroxyl -3,5-Di-tert-butylphenyl)-5-chloro-benzotriazole, 2-[2-hydroxy-3,5-bis(1,1-dimethylbenzyl)phenyl]-2H - Benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazol-2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol] , 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzotriazole, 3-[3-(2H-benzotriazole-2- yl)-5-tert-butyl-4-hydroxyphenyl]propionic acid methyl ester and the like.

另外,也可以使用对苯二酚化合物、羟基蒽醌化合物、多酚化合物等规定的含羟基化合物作为离子捕获剂。作为这种含羟基化合物,具体而言,可列举:1,2-苯二酚、茜素、1,5-二羟基蒽醌、鞣酸、没食子酸、没食子酸甲酯、连苯三酚等。In addition, a predetermined hydroxyl group-containing compound such as a hydroquinone compound, a hydroxyanthraquinone compound, and a polyphenol compound can also be used as the ion trapping agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, 1,5-dihydroxyanthraquinone, tannic acid, gallic acid, methyl gallate, pyrogallol, and the like. .

对粘接剂层的厚度(层叠体的情况下为总厚度)没有特别限定,为例如1~200μm。上限优选为100μm,更优选为80μm。下限优选为3μm,更优选为5μm。The thickness of the adhesive bond layer (the total thickness in the case of a laminate) is not particularly limited, but is, for example, 1 to 200 μm. The upper limit is preferably 100 μm, and more preferably 80 μm. The lower limit is preferably 3 μm, and more preferably 5 μm.

对于本发明的切割芯片接合薄膜,在温度23℃、剥离速度300mm/分钟的条件下的T型剥离试验中的、上述粘合剂层与上述粘接剂层之间的剥离力优选为0.3N/20mm以上、更优选为0.5N/20mm以上、进一步优选为0.7N/20mm以上。上述剥离力为0.3N/20mm以上时,能够使粘合剂层与粘接剂层的密合性适度,在不进行辐射线固化的状态下实施扩展工序的情况下,容易抑制扩展工序及之后的粘合剂层与粘接剂层之间的剥离(浮起)的产生。In the dicing die-bonding film of the present invention, the peel force between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer is preferably 0.3 N in a T-type peel test under the conditions of a temperature of 23° C. and a peeling speed of 300 mm/min. /20mm or more, more preferably 0.5N/20mm or more, still more preferably 0.7N/20mm or more. When the peeling force is 0.3 N/20 mm or more, the adhesiveness between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer can be moderately adjusted, and when the expansion process is carried out without radiation curing, the expansion process and later can be easily suppressed. The occurrence of peeling (floating) between the adhesive layer and the adhesive layer.

另外,上述剥离力越高越优选,其上限例如可以为10N/20mm、可以为5.0N/20mm、也可以为3.0N/20mm。需要说明的是,关于粘合剂层中使用了辐射线固化性粘合剂的切割芯片接合薄膜,辐射线固化前的粘合剂层的上述剥离力(紫外线固化前的T型剥离试验中的剥离力)优选为上述的值。In addition, the higher the peeling force, the more preferable, and the upper limit may be, for example, 10 N/20 mm, 5.0 N/20 mm, or 3.0 N/20 mm. In addition, with respect to the dicing die-bonding film using the radiation-curable adhesive in the adhesive layer, the above-mentioned peel force of the adhesive layer before radiation curing (in the T-peel test before ultraviolet curing) peel force) is preferably the above-mentioned value.

对于本发明的切割芯片接合薄膜,在温度23℃、剥离速度300mm/分钟的条件下的T型剥离试验中的、辐射线固化后的上述粘合剂层与上述粘接剂层之间的剥离力优选为0.3N/20mm以下,更优选为0.2N/20mm以下。上述剥离力为0.3N/20mm以下时,在辐射线固化后进行的拾取工序中容易实现良好的拾取。In the dicing die-bonding film of the present invention, in the T-peel test under the conditions of a temperature of 23° C. and a peeling speed of 300 mm/min, the peeling between the adhesive layer after radiation curing and the adhesive layer The force is preferably 0.3 N/20 mm or less, and more preferably 0.2 N/20 mm or less. When the said peeling force is 0.3 N/20mm or less, it becomes easy to implement favorable pick-up in the pick-up process performed after radiation hardening.

切割芯片接合薄膜可以具有隔离体。具体而言,既可以是每个切割芯片接合薄膜具有隔离体的片状的形态,也可以是隔离体为长条状、在其上配置有多个切割芯片接合薄膜且该隔离体被卷绕成卷的形态。The dicing die-bonding film may have a separator. Specifically, a sheet-like form having a separator for each dicing die-bonding film may be used, or the separator may be an elongated shape, a plurality of dicing die-bonding films may be arranged thereon, and the separator may be wound. In roll form.

隔离体是用于覆盖并保护切割芯片接合薄膜的粘接剂层的表面的要素,在使用切割芯片接合薄膜时从该薄膜剥离。作为隔离体,可列举例如:聚对苯二甲酸乙二醇酯(PET)薄膜、聚乙烯薄膜、聚丙烯薄膜、利用氟类剥离剂或丙烯酸长链烷基酯类剥离剂等剥离剂进行了表面涂布的塑料薄膜或纸类等。隔离体的厚度为例如5~200μm。The separator is an element for covering and protecting the surface of the adhesive layer of the dicing die-bonding film, and is peeled from the dicing die-bonding film when the dicing die-bonding film is used. As the separator, for example, polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-type release agent can be used. Surface-coated plastic film or paper, etc. The thickness of the separator is, for example, 5 to 200 μm.

作为本发明的切割芯片接合薄膜的一实施方式的切割芯片接合薄膜1例如可如下制造。The dicing die-bonding film 1 as one embodiment of the dicing die-bonding film of the present invention can be produced, for example, as follows.

首先,基材11可以通过公知乃至惯用的制膜方法进行制膜而得到。作为上述制膜方法,例如,可列举出压延制膜法、有机溶剂中的浇铸法、密闭体系中的吹塑挤出法、T模挤出法、共挤出法、干层压法等。First, the base material 11 can be obtained by forming a film by a known or conventional film forming method. Examples of the above-mentioned film forming method include a calendering film forming method, a casting method in an organic solvent, a blow extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

然后,在基材11上涂布包含形成粘合剂层12的粘合剂及溶剂等的、形成粘合剂层12的组合物(粘合剂组合物)而形成涂布膜后,根据需要通过脱溶剂、固化等使该涂布膜固化,可以形成粘合剂层12。作为上述涂布的方法,例如,可列举出辊涂布、丝网涂布、凹版涂布等公知乃至惯用的涂布方法。另外,作为脱溶剂条件,例如,在温度80~150℃、时间0.5~5分钟的范围内进行。Then, a composition for forming the pressure-sensitive adhesive layer 12 (adhesive composition) including a pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12, a solvent, and the like is applied on the substrate 11 to form a coating film, and then, if necessary, a coating film is formed. The adhesive layer 12 can be formed by curing the coating film by solvent removal, curing, or the like. As a method of said coating, well-known and conventional coating methods, such as roll coating, screen coating, and gravure coating, are mentioned, for example. Moreover, as desolvation conditions, for example, it performs in the range of temperature 80-150 degreeC, and time 0.5-5 minutes.

另外,可以在隔离体上涂布粘合剂组合物而形成涂布膜后,通过上述的脱溶剂条件使涂布膜固化而形成粘合剂层12。然后,在基材11上与隔离体一起贴合粘合剂层12。如上操作,可以制作切割带10。需要说明的是,采用将在隔离体上形成的粘合剂层12转印至基材11上的方法的情况下,为了将粘合剂层12的表面12a的Ra设为1.0μm以下,优选使用剥离处理面(粘合剂组合物涂布面)的Ra更小的隔离体。In addition, the adhesive layer 12 may be formed by coating the adhesive composition on the separator to form a coating film, and then curing the coating film under the above-mentioned desolvation conditions. Then, the pressure-sensitive adhesive layer 12 is attached to the base material 11 together with the separator. By doing as above, the dicing tape 10 can be produced. In addition, in the case where the method of transferring the pressure-sensitive adhesive layer 12 formed on the separator to the base material 11 is employed, in order to set the Ra of the surface 12 a of the pressure-sensitive adhesive layer 12 to 1.0 μm or less, it is preferable to A separator with a smaller Ra of the release-treated surface (adhesive composition-coated surface) was used.

对于粘接剂层20,首先,制作包含树脂、填料、固化催化剂、溶剂等的、形成粘接剂层20的组合物(粘接剂组合物)。然后,将粘接剂组合物涂布于隔离体上而形成涂布膜后,根据需要通过脱溶剂、固化等使该涂布膜固化,形成粘接剂层20。作为涂布方法,没有特别限定,例如,可列举出辊涂布、丝网涂布、凹版涂布等公知乃至惯用的涂布方法。另外,作为脱溶剂条件,例如,在温度70~160℃、时间1~5分钟的范围内进行。For the adhesive layer 20, first, a composition (adhesive composition) for forming the adhesive layer 20 containing a resin, a filler, a curing catalyst, a solvent, and the like is prepared. Then, after applying the adhesive composition on the separator to form a coating film, if necessary, the coating film is cured by solvent removal, curing, or the like to form the adhesive layer 20 . Although it does not specifically limit as a coating method, For example, well-known and conventional coating methods, such as roll coating, screen coating, and gravure coating, are mentioned. Moreover, as a desolvation condition, for example, it performs in the range of temperature 70-160 degreeC, and time 1-5 minutes.

接着,将隔离体分别从切割带10及粘接剂层20剥离,以粘接剂层20与粘合剂层12成为贴合面的方式将两者贴合。贴合例如可以通过压接来进行。此时,层压温度没有特别限定,例如,优选30~50℃、更优选为35~45℃。另外,线压没有特别限定,例如,优选0.1~20kgf/cm、更优选为1~10kgf/cm。Next, the separator is peeled off from the dicing tape 10 and the adhesive layer 20 , respectively, and the adhesive layer 20 and the adhesive layer 12 are bonded together so that the adhesive layer 20 and the adhesive layer 12 become bonding surfaces. Bonding can be performed, for example, by crimping. In this case, the lamination temperature is not particularly limited, but for example, it is preferably 30 to 50°C, and more preferably 35 to 45°C. Moreover, although the linear pressure is not specifically limited, For example, 0.1-20 kgf/cm is preferable, and 1-10 kgf/cm is more preferable.

如上所述,粘合剂层12为辐射线固化型粘合剂层的情况下,在粘接剂层20的贴合后对粘合剂层12照射紫外线等辐射线时,例如从基材11侧对粘合剂层12进行辐射线照射,其照射量例如为50~500mJ,优选为100~300mJ。As described above, when the adhesive layer 12 is a radiation-curable adhesive layer, when the adhesive layer 12 is irradiated with radiation such as ultraviolet rays after the adhesive layer 20 is bonded, the adhesive layer 12 is irradiated with radiation such as ultraviolet rays. The adhesive layer 12 is irradiated with radiation, and the irradiation amount is, for example, 50 to 500 mJ, or preferably 100 to 300 mJ.

切割芯片接合薄膜1中进行作为粘合剂层12的粘合力降低措施的照射的区域(照射区域R)通常为粘合剂层12中的粘接剂层20贴合区域内的除其边缘部以外的区域。局部设置照射区域R的情况下,可以隔着形成了与除照射区域R以外的区域相对应的图案的光掩模进行。另外,也可列举出点状照射辐射线来形成照射区域R的方法。In the dicing die-bonding film 1 , the area (irradiated area R) where irradiation as a measure for reducing the adhesive force of the adhesive layer 12 is performed is usually the area except the edge of the adhesive layer 20 in the adhesive layer 12 in the bonding area. areas outside the Department. When the irradiation region R is partially provided, it can be performed through a photomask in which a pattern corresponding to regions other than the irradiation region R is formed. In addition, a method of forming the irradiation region R by irradiating the radiation in a spot shape can also be mentioned.

如上操作,可以制作例如图1所示的切割芯片接合薄膜1。As described above, for example, the dicing die-bonding film 1 shown in FIG. 1 can be produced.

[半导体装置的制造方法][Manufacturing method of semiconductor device]

使用本发明的切割芯片接合薄膜可以制造半导体装置。具体而言,可以通过包含如下工序的制造方法来制造半导体装置:在本发明的切割芯片接合薄膜中的上述粘接剂层侧贴附包含多个半导体芯片的半导体晶圆的分割体、或能够单片化为多个半导体芯片的半导体晶圆的工序(有时称为“工序A”);在相对低温的条件下扩展本发明的切割芯片接合薄膜中的切割带,至少割断上述粘接剂层,得到带有粘接剂层的半导体芯片的工序(有时称为“工序B”);在相对高温的条件下扩展上述切割带,拓宽上述带有粘接剂层的半导体芯片彼此的间隔的工序(有时称为“工序C”);和拾取上述带有粘接剂层的半导体芯片的工序(有时称为“工序D”)。A semiconductor device can be manufactured using the dicing die-bonding film of the present invention. Specifically, a semiconductor device can be manufactured by a manufacturing method including a step of sticking a divided body of a semiconductor wafer including a plurality of semiconductor chips on the adhesive layer side of the dicing die-bonding film of the present invention, or capable of A step of singulating a semiconductor wafer into a plurality of semiconductor chips (sometimes referred to as "step A"); expanding the dicing tape in the dicing die-bonding film of the present invention at a relatively low temperature to cut at least the above-mentioned adhesive layer , the process of obtaining a semiconductor chip with an adhesive layer (sometimes referred to as "process B"); the process of expanding the above-mentioned dicing tape under relatively high temperature conditions to widen the distance between the above-mentioned semiconductor chips with an adhesive layer. (sometimes referred to as "step C"); and a step of picking up the above-mentioned semiconductor chip with an adhesive bond layer (sometimes referred to as "step D").

工序A中使用的上述包含多个半导体芯片的半导体晶圆的分割体、或能够单片化为多个半导体芯片的半导体晶圆可以如下得到。首先,如图2的(a)和图2的(b)所示在半导体晶圆W上形成分割槽30a(分割槽形成工序)。半导体晶圆W具有第1面Wa和第2面Wb。在半导体晶圆W中的第1面Wa侧已经安装了各种半导体元件(省略图示),并且该半导体元件所需要的布线结构等(省略图示)也已经形成在第1面Wa上。The divided body of the semiconductor wafer including the plurality of semiconductor chips used in the step A, or the semiconductor wafer that can be singulated into a plurality of semiconductor chips can be obtained as follows. First, as shown in FIGS. 2( a ) and 2 ( b ), dividing grooves 30 a are formed on the semiconductor wafer W (division groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already mounted on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements are already formed on the first surface Wa.

然后,将具有粘合面T1a的晶圆加工用胶带T1贴合于半导体晶圆W的第2面Wb侧后,以在晶圆加工用胶带T1上保持有半导体晶圆W的状态使用切割装置等旋转刀具在半导体晶圆W的第1面Wa侧形成规定深度的分割槽30a。分割槽30a为用于使半导体晶圆W分离为半导体芯片单元的空隙(在图2~4中,以粗线示意性示出分割槽30a)。Then, after bonding the tape T1 for wafer processing having the adhesive surface T1a to the second surface Wb side of the semiconductor wafer W, a dicing device is used in a state where the semiconductor wafer W is held on the tape T1 for wafer processing. The iso-rotary cutter forms dividing grooves 30 a of predetermined depths on the first surface Wa side of the semiconductor wafer W. As shown in FIG. The dividing grooves 30 a are gaps for separating the semiconductor wafer W into semiconductor chip units (the dividing grooves 30 a are schematically shown by thick lines in FIGS. 2 to 4 ).

然后,如图2的(c)所示,进行具有粘合面T2a的晶圆加工用胶带T2向半导体晶圆W的第1面Wa侧的贴合、以及从半导体晶圆W剥离晶圆加工用胶带T1。Then, as shown in FIG. 2( c ), the wafer processing tape T2 having the adhesive surface T2 a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing is performed to separate the wafer from the semiconductor wafer W Use tape T1.

然后,如图2的(d)所示,以在晶圆加工用胶带T2上保持有半导体晶圆W的状态,通过从第2面Wb起的磨削加工使半导体晶圆W减薄至规定厚度(晶圆减薄工序)。磨削加工可以使用具有磨削磨石的磨削加工装置进行。通过该晶圆减薄工序,在本实施方式中可形成能够单片化为多个半导体芯片31的半导体晶圆30A。Then, as shown in FIG. 2( d ), in a state where the semiconductor wafer W is held on the tape T2 for wafer processing, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the second surface Wb Thickness (wafer thinning process). The grinding process can be performed using a grinding process apparatus having a grinding stone. Through this wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips 31 can be formed.

半导体晶圆30A具体而言在该晶圆中具有在第2面Wb侧将要单片化为多个半导体芯片31的部位连接的部位(连接部)。半导体晶圆30A中的连接部的厚度、即半导体晶圆30A的第2面Wb与分割槽30a的第2面Wb侧的前端之间的距离为例如1~30μm,优选为3~20μm。Specifically, the semiconductor wafer 30A has a portion (connection portion) in the wafer that connects portions to be singulated into a plurality of semiconductor chips 31 on the second surface Wb side. The thickness of the connection portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the second surface Wb side of the dividing groove 30a is, for example, 1 to 30 μm, or preferably 3 to 20 μm.

(工序A)(Process A)

在工序A中,在切割芯片接合薄膜1中的粘接剂层20侧贴附包含多个半导体芯片的半导体晶圆的分割体、或能够单片化为多个半导体芯片的半导体晶圆。In step A, a split body of a semiconductor wafer including a plurality of semiconductor chips, or a semiconductor wafer that can be singulated into a plurality of semiconductor chips is attached to the adhesive layer 20 side in the dicing die-bonding film 1 .

在工序A的一实施方式中,如图3的(a)所示,将保持于晶圆加工用胶带T2的半导体晶圆30A与切割芯片接合薄膜1的粘接剂层20贴合。然后,如图3的(b)所示,从半导体晶圆30A剥离晶圆加工用胶带T2。In one embodiment of step A, as shown in FIG. 3( a ), the semiconductor wafer 30A held by the tape T2 for wafer processing is bonded to the adhesive layer 20 of the dicing die-bonding film 1 . Then, as shown in FIG. 3( b ), the tape T2 for wafer processing is peeled off from the semiconductor wafer 30A.

需要说明的是,在向粘接剂层20贴合半导体晶圆30A之后从基材11侧对粘合剂层12照射紫外线等辐射线。照射量为例如50~500mJ/cm2,优选为100~300mJ/cm2。切割芯片接合薄膜1中要进行作为粘合剂层12的粘合力降低措施的照射的区域(图1所示的照射区域R)为例如粘合剂层12中的粘接剂层20贴合区域内的除其边缘部以外的区域。In addition, after bonding the semiconductor wafer 30A to the adhesive bond layer 20, radiation, such as an ultraviolet-ray, is irradiated to the adhesive bond layer 12 from the base material 11 side. The irradiation amount is, for example, 50 to 500 mJ/cm 2 , preferably 100 to 300 mJ/cm 2 . In the dicing die-bonding film 1, an area to be irradiated as a measure for reducing the adhesive force of the adhesive layer 12 (irradiated area R shown in FIG. 1 ) is, for example, the adhesive layer 20 in the adhesive layer 12 is attached. Areas other than the edges of the area.

(工序B)(Process B)

在工序B中,在相对低温的条件下扩展切割芯片接合薄膜1中的切割带10,至少割断粘接剂层20,得到带有粘接剂层的半导体芯片。In step B, the dicing tape 10 in the die-bonding film 1 is spread under relatively low temperature conditions, at least the adhesive layer 20 is cut, and a semiconductor chip with an adhesive layer is obtained.

在工序B的一实施方式中,首先在切割芯片接合薄膜1中的切割带10的粘合剂层12上贴附环形框41,然后,如图4的(a)所示将带有半导体晶圆30A的该切割芯片接合薄膜1固定于扩展装置的保持件42。In one embodiment of the process B, first, the ring frame 41 is attached to the adhesive layer 12 of the dicing tape 10 in the dicing die-bonding film 1, and then, as shown in FIG. The dicing die-bonding film 1 of the circle 30A is fixed to the holder 42 of the expansion device.

然后,如图4的(b)所示进行相对低温的条件下的第1扩展工序(冷扩展工序),将半导体晶圆30A单片化为多个半导体芯片31,并且将切割芯片接合薄膜1的粘接剂层20割断为小片的粘接剂层21,得到带有粘接剂层的半导体芯片31。Then, as shown in FIG. 4( b ), a first expansion step (cold expansion step) under relatively low temperature conditions is performed, the semiconductor wafer 30A is singulated into a plurality of semiconductor chips 31 , and the die-bonding film 1 is diced. The adhesive layer 20 is cut into small pieces of the adhesive layer 21 to obtain a semiconductor chip 31 with an adhesive layer.

在冷扩展工序中,使扩展装置所具备的中空圆柱形状的顶起构件43在切割芯片接合薄膜1的图中下侧抵接于切割带10并上升,按照沿着包括半导体晶圆30A的径向和圆周方向的二维方向对贴合有半导体晶圆30A的切割芯片接合薄膜1的切割带10进行拉伸的方式进行扩展。In the cold expansion step, the hollow cylindrical lift-up member 43 included in the expansion device is brought into contact with the dicing tape 10 on the lower side of the drawing in which the die-bonding film 1 is diced and raised so as to follow the diameter including the semiconductor wafer 30A. The dicing tape 10 on which the dicing die-bonding film 1 of the semiconductor wafer 30A is bonded is extended in a two-dimensional direction with respect to the circumferential direction.

该扩展以使切割带10中产生15~32MPa、优选20~32MPa的范围内的拉伸应力的条件来进行。冷扩展工序中的温度条件为例如0℃以下,优选为-20~-5℃,更优选为-15~-5℃,更优选为-15℃。冷扩展工序中的扩展速度(使顶起构件43上升的速度)优选为0.1~100mm/秒。另外,冷扩展工序中的扩展量优选为3~16mm。This expansion is performed under the conditions that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa, is generated in the dicing tape 10 . The temperature conditions in the cold expansion step are, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed in the cold expansion step (the speed at which the lifting member 43 is raised) is preferably 0.1 to 100 mm/sec. In addition, the expansion amount in the cold expansion step is preferably 3 to 16 mm.

当在工序B中使用能够单片化为多个半导体芯片的半导体晶圆30A时,在半导体晶圆30A中较薄的、容易产生裂纹的部位发生割断,从而单片化为半导体芯片31。与此同时,工序B中,与被扩展的切割带10的粘合剂层12密合的粘接剂层20在各半导体芯片31所密合的各区域中变形受到抑制,另一方面,在位于图中的与半导体芯片31间的分割槽垂直的方向的位置处则不产生这种变形抑制,在该状态下切割带10中产生的拉伸应力发挥作用。其结果是,在粘接剂层20中位于与半导体芯片31间的分割槽垂直的方向的位置处被割断。在通过扩展而割断之后,如图4的(c)所示,使顶起构件43下降而解除切割带10的扩展状态。When the semiconductor wafer 30A that can be singulated into a plurality of semiconductor chips is used in the step B, the semiconductor wafer 30A is singulated into the semiconductor chips 31 by cutting at a thin portion of the semiconductor wafer 30A where cracks are likely to occur. At the same time, in the step B, the adhesive layer 20 that is in close contact with the adhesive layer 12 of the expanded dicing tape 10 is restrained from being deformed in each region where the semiconductor chips 31 are in close contact. Such deformation suppression does not occur at positions located in the direction perpendicular to the dividing grooves between the semiconductor chips 31 in the figure, and tensile stress generated in the dicing tape 10 acts in this state. As a result, the adhesive layer 20 is cut at a position in a direction perpendicular to the dividing groove between the semiconductor chips 31 . After being cut by expansion, as shown in FIG. 4( c ), the push-up member 43 is lowered to release the expanded state of the dicing tape 10 .

(工序C)(Process C)

在工序C中,在相对高温的条件下扩展上述切割带10,使上述带有粘接剂层的半导体芯片彼此的间隔拓宽。In step C, the dicing tape 10 is expanded under relatively high temperature conditions to widen the distance between the semiconductor chips with the adhesive layer.

在工序C的一实施方式中,首先如图5的(a)所示进行相对高温的条件下的第2扩展工序(常温扩展工序),使带有粘接剂层的半导体芯片31间的距离(间隔距离)拓宽。In one embodiment of the process C, first, as shown in FIG. 5( a ), a second expansion process (a normal temperature expansion process) under relatively high temperature conditions is performed, and the distance between the semiconductor chips 31 with the adhesive layer is adjusted to (separation distance) widened.

在工序C中,再次使扩展装置所具备的中空圆柱形状的顶起构件43上升而扩展切割芯片接合薄膜1的切割带10。第2扩展工序中的温度条件为例如10℃以上,优选为15~30℃。第2扩展工序中的扩展速度(使顶起构件43上升的速度)为例如0.1~10mm/秒,优选为0.3~1mm/秒。在工序C中,使带有粘接剂层的半导体芯片31的间隔距离拓宽至能够通过后述的拾取工序适宜地从切割带10拾取带有粘接剂层的半导体芯片31的程度。在通过扩展而拓宽间隔距离后,如图5的(b)所示使顶起构件43下降,解除切割带10的扩展状态。In the process C, the hollow-cylindrical-shaped push-up member 43 with which the expansion device is provided is raised again to expand the dicing tape 10 for dicing the die-bonding film 1 . The temperature conditions in the second expansion step are, for example, 10°C or higher, preferably 15 to 30°C. The expansion speed in the second expansion step (the speed at which the push-up member 43 is raised) is, for example, 0.1 to 10 mm/sec, or preferably 0.3 to 1 mm/sec. In step C, the distance between the adhesive layer-attached semiconductor chips 31 is widened to such an extent that the adhesive layer-attached semiconductor chips 31 can be appropriately picked up from the dicing tape 10 in a pickup step to be described later. After the spacing distance is widened by the expansion, the push-up member 43 is lowered as shown in FIG. 5( b ), and the expanded state of the dicing tape 10 is released.

从抑制解除扩展状态后切割带10上的带有粘接剂层的半导体芯片31的间隔距离变窄的观点出发,优选在解除扩展状态之前对切割带10中的半导体芯片31保持区域的外侧部分进行加热、使其收缩。From the viewpoint of suppressing the narrowing of the distance between the semiconductor chips 31 with the adhesive layer on the dicing tape 10 after the expanded state is released, it is preferable to hold the outer portion of the region where the semiconductor chips 31 in the dicing tape 10 are held before releasing the expanded state. Heat it to shrink it.

在工序C之后,根据需要可以具有清洁工序,其使用水等清洗液清洗具有带有粘接剂层的半导体芯片31的切割带10中的半导体芯片31侧。After step C, if necessary, there may be a cleaning step of cleaning the semiconductor chip 31 side of the dicing tape 10 having the semiconductor chip 31 with the adhesive layer using a cleaning liquid such as water.

(工序D)(Process D)

在工序D(拾取工序)中,拾取单片化后的带有粘接剂层的半导体芯片。在工序D的一实施方式中,在根据需要经过上述清洁工序后,如图6所示从切割带10拾取带有粘接剂层的半导体芯片31。例如,对于拾取对象的带有粘接剂层的半导体芯片31,在切割带10的图中下侧使拾取机构的针状构件44上升而隔着切割带10进行顶起后,利用吸附夹具45将其吸附保持。在拾取工序中,针状构件44的顶起速度为例如1~100mm/秒,针状构件44的顶起量为例如50~3000μm。In step D (pickup step), the singulated semiconductor chips with the adhesive layer are picked up. In one embodiment of the process D, after passing through the above-mentioned cleaning process as needed, the semiconductor chip 31 with the adhesive layer is picked up from the dicing tape 10 as shown in FIG. 6 . For example, for the semiconductor chip 31 with the adhesive layer to be picked up, the needle-shaped member 44 of the pick-up mechanism is raised from the lower side of the dicing tape 10 in the figure to push up through the dicing tape 10 , and then the suction jig 45 is used. Adsorb it. In the pick-up process, the push-up speed of the needle-shaped member 44 is, for example, 1 to 100 mm/sec, and the push-up amount of the needle-shaped member 44 is, for example, 50 to 3000 μm.

上述半导体装置的制造方法还可以包含工序A~D以外的其它工序。例如,在一实施方式中,如图7的(a)所示,将所拾取的带有粘接剂层的半导体芯片31借助粘接剂层21暂时固定于被粘物51(暂时固定工序)。The above-described method of manufacturing a semiconductor device may further include other steps than steps A to D. For example, in one embodiment, as shown in FIG. 7( a ), the picked-up semiconductor chip 31 with an adhesive layer is temporarily fixed to the adherend 51 via the adhesive layer 21 (temporary fixing step) .

作为被粘物51,可列举例如:引线框、TAB(载带自动键合,Tape AutomatedBonding)薄膜、布线基板、另外制作的半导体芯片等。粘接剂层21在暂时固定时在25℃下的剪切粘接力相对于被粘物51优选为0.2MPa以上,更优选为0.2~10MPa。粘接剂层21的上述剪切粘接力为0.2MPa以上的构成在后述的引线键合工序中能够抑制由于超声波振动、加热而在粘接剂层21与半导体芯片31或被粘物51的粘接面产生剪切变形,能适宜地进行引线键合。另外,粘接剂层21在暂时固定时在175℃下的剪切粘接力相对于被粘物51优选为0.01MPa以上,更优选为0.01~5MPa。Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, a separately produced semiconductor chip, and the like. The shear adhesive force at 25° C. of the adhesive layer 21 when temporarily fixed is preferably 0.2 MPa or more with respect to the adherend 51 , and more preferably 0.2 to 10 MPa. The configuration in which the shear adhesive force of the adhesive layer 21 is 0.2 MPa or more can suppress the adhesion between the adhesive layer 21 and the semiconductor chip 31 or the adherend 51 due to ultrasonic vibration and heating in the wire bonding process described later. Shear deformation occurs on the bonding surface, and wire bonding can be performed appropriately. Moreover, when the adhesive bond layer 21 is temporarily fixed, it is preferable that it is 0.01 MPa or more with respect to the to-be-adhered body 51, and, as for the shear adhesive force at 175 degreeC, it is more preferable that it is 0.01-5 MPa.

然后,如图7的(b)所示,将半导体芯片31的电极极板(省略图示)与被粘物51所具有的端子部(省略图示)借助接合引线52而电连接(引线接合工序)。Then, as shown in FIG. 7( b ), the electrode pads (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected by bonding wires 52 (wire bonding). process).

半导体芯片31的电极极板、被粘物51的端子部与接合引线52的连接可以通过伴有加热的超声波焊接而实现,以不使粘接剂层21热固化的方式来进行。作为接合引线52,可以使用例如金线、铝线、铜线等。引线接合中的引线加热温度为例如80~250℃,优选为80~220℃。另外,其加热时间为几秒~几分钟。The electrode pads of the semiconductor chip 31 , the terminals of the adherend 51 and the bonding wires 52 can be connected by ultrasonic welding with heating, and the adhesive layer 21 can be not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The wire heating temperature in wire bonding is, for example, 80 to 250°C, or preferably 80 to 220°C. In addition, the heating time is several seconds to several minutes.

然后,如图7的(c)所示,通过用于保护被粘物51上的半导体芯片31、接合引线52的密封树脂53将半导体芯片31密封(密封工序)。Then, as shown in FIG. 7( c ), the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 on the adherend 51 and the bonding wire 52 (sealing step).

在密封工序中,粘接剂层21进行热固化。在密封工序中,例如通过使用模具进行的传递成型技术来形成密封树脂53。作为密封树脂53的构成材料,可以使用例如环氧类树脂。在密封工序中,用于形成密封树脂53的加热温度为例如165~185℃,加热时间为例如60秒~几分钟。In the sealing step, the adhesive layer 21 is thermally cured. In the sealing process, the sealing resin 53 is formed by, for example, a transfer molding technique using a mold. As a constituent material of the sealing resin 53, for example, an epoxy resin can be used. In the sealing step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185° C., and the heating time is, for example, 60 seconds to several minutes.

当在密封工序中密封树脂53未充分进行固化时,在密封工序之后进行用于使密封树脂53完全固化的后固化工序。即使在密封工序中粘接剂层21未完全热固化的情况下,也可以在后固化工序中与密封树脂53一起进行粘接剂层21的完全热固化。在后固化工序中,加热温度为例如165~185℃,加热时间为例如0.5~8小时。When the sealing resin 53 is not sufficiently cured in the sealing process, a post-curing process for completely curing the sealing resin 53 is performed after the sealing process. Even when the adhesive layer 21 is not completely thermally cured in the sealing step, the adhesive layer 21 may be completely thermally cured together with the sealing resin 53 in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185° C., and the heating time is, for example, 0.5 to 8 hours.

在上述实施方式中,如上所述,在使带有粘接剂层的半导体芯片31暂时固定于被粘物51之后,在不使粘接剂层21完全热固化的状态下进行引线接合工序。也可以代替这种构成,在上述半导体装置的制造方法中,在将带有粘接剂层的半导体芯片31暂时固定于被粘物51后使粘接剂层21热固化,然后进行引线接合工序。In the above-described embodiment, as described above, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51 , the wire bonding step is performed without completely thermosetting the adhesive layer 21 . Instead of this configuration, in the above-described method of manufacturing a semiconductor device, the adhesive layer 21 may be thermally cured after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, and then the wire bonding step may be performed. .

在上述半导体装置的制造方法中,作为其它实施方式,可以进行图8所示的晶圆减薄工序来代替参照图2的(d)的上述晶圆减薄工序。经过参照图2的(c)的上述过程后,在图8所示的晶圆减薄工序中,以在晶圆加工用胶带T2上保持有半导体晶圆W的状态通过从第2面Wb起的磨削加工将该晶圆减薄至规定厚度,形成包含多个半导体芯片31且被保持于晶圆加工用胶带T2的半导体晶圆分割体30B。In the above-described method of manufacturing a semiconductor device, as another embodiment, the wafer thinning process shown in FIG. 8 may be performed instead of the above-described wafer thinning process with reference to FIG. 2( d ). After the above-described process with reference to FIG. 2( c ), in the wafer thinning step shown in FIG. 8 , the semiconductor wafer W is passed from the second surface Wb in a state where the semiconductor wafer W is held on the tape T2 for wafer processing. The wafer is thinned to a predetermined thickness by a grinding process, and a semiconductor wafer divided body 30B including a plurality of semiconductor chips 31 and held by the tape T2 for wafer processing is formed.

在上述晶圆减薄工序中,既可以采用将晶圆磨削至分割槽30a在第2面Wb侧露出为止的方法(第1方法),也可以采用如下方法:从第2面Wb侧起磨削晶圆至即将到达分割槽30a,然后利用旋转磨石对晶圆的挤压力作用使分割槽30a与第2面Wb之间产生裂纹,从而形成半导体晶圆分割体30B(第2方法)。根据所采用的方法适宜确定参照图2的(a)和图2的(b)的如上形成的分割槽30a的、从第1面Wa起的深度。In the wafer thinning step described above, a method of grinding the wafer until the dividing grooves 30a are exposed on the second surface Wb side (first method), or a method of starting from the second surface Wb side may be used. The wafer is ground until it reaches the dividing groove 30a, and then cracks are formed between the dividing groove 30a and the second surface Wb by the pressing force of the rotating grindstone on the wafer, thereby forming the semiconductor wafer dividing body 30B (the second method). ). The depth from the first surface Wa of the dividing groove 30a formed as described above with reference to FIGS. 2(a) and 2(b) is appropriately determined according to the method to be used.

在图8中,用粗线示意性示出经由第1方法而成的分割槽30a或经由第2方法而成的分割槽30a以及与其相连的裂纹。在上述半导体装置的制造方法中,可以在工序A中使用由此制作的半导体晶圆分割体30B作为半导体晶圆分割体来代替半导体晶圆30A,并进行参照图3至图7的上述各工序。In FIG. 8 , the divided grooves 30 a formed by the first method or the divided grooves 30 a formed by the second method and the cracks connected thereto are schematically shown by thick lines. In the above-described method of manufacturing a semiconductor device, in step A, the semiconductor wafer divided body 30B thus produced may be used as the semiconductor wafer divided body instead of the semiconductor wafer 30A, and the above-described steps with reference to FIGS. 3 to 7 may be performed. .

图9的(a)和图9的(b)示出该实施方式的工序B、即在将半导体晶圆分割体30B贴合于切割芯片接合薄膜1后进行的第1扩展工序(冷扩展工序)。FIGS. 9( a ) and 9 ( b ) show the process B of this embodiment, that is, the first expansion process (cold expansion process) performed after the semiconductor wafer divided body 30B is bonded to the dicing die-bonding film 1 . ).

在该实施方式的工序B中,使扩展装置所具备的中空圆柱形状的顶起构件43在切割芯片接合薄膜1的图中下侧抵接于切割带10并上升,以沿着包含半导体晶圆分割体30B的径向和圆周方向的二维方向对贴合有半导体晶圆分割体30B的切割芯片接合薄膜1的切割带10进行拉伸的方式进行扩展。In step B of this embodiment, the hollow cylindrical lift-up member 43 included in the expansion device is brought into contact with the dicing tape 10 on the lower side in the drawing of the dicing die-bonding film 1 and raised so as to extend along the semiconductor wafer including the semiconductor wafer. The two-dimensional directions of the radial direction and the circumferential direction of the divided body 30B are expanded so that the dicing tape 10 of the dicing die-bonding film 1 to which the semiconductor wafer divided body 30B is bonded is stretched.

该扩展以使切割带10中产生例如5~28MPa、优选8~25MPa的范围内的拉伸应力的条件来进行。冷扩展工序中的温度条件为例如0℃以下,优选为-20~-5℃,更优选为-15~-5℃,更优选为-15℃。冷扩展工序中的扩展速度(使顶起构件43上升的速度)优选为1~400mm/秒。另外,冷扩展工序中的扩展量优选为50~200mm。This expansion is performed under conditions such that a tensile stress in the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa, is generated in the dicing tape 10 . The temperature conditions in the cold expansion step are, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed in the cold expansion step (the speed at which the lifting member 43 is raised) is preferably 1 to 400 mm/sec. In addition, the expansion amount in the cold expansion step is preferably 50 to 200 mm.

通过这样的冷扩展工序,将切割芯片接合薄膜1的粘接剂层20割断为小片的粘接剂层21,得到带有粘接剂层的半导体芯片31。具体而言,在冷扩展工序中,在与要被扩展的切割带10的粘合剂层12密合的粘接剂层20中在半导体晶圆分割体30B的各半导体芯片31所密合的各区域中变形受到抑制,另一方面,在位于图中的与半导体芯片31间的分割槽30a垂直的方向的位置处则不产生这种变形抑制作用,在该状态下切割带10中产生的拉伸应力发挥作用。其结果是,在粘接剂层20中在位于图中的与半导体芯片31间的分割槽30a垂直的方向的位置处被割断。By such a cold expansion process, the adhesive bond layer 20 of the dicing die-bonding film 1 is cut|disconnected into the adhesive bond layer 21 of small pieces, and the semiconductor chip 31 with an adhesive bond layer is obtained. Specifically, in the cold expansion step, in the adhesive layer 20 that is in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded, each semiconductor chip 31 of the semiconductor wafer divided body 30B is in close contact with each other. Deformation is suppressed in each region. On the other hand, such a deformation suppressing effect does not occur at positions located in the direction perpendicular to the dividing grooves 30a between the semiconductor chips 31 in the figure. Tensile stress comes into play. As a result, the adhesive layer 20 is cut at a position in the direction perpendicular to the dividing groove 30a between the semiconductor chips 31 in the figure.

在上述半导体装置的制造方法中,作为又一其它实施方式,可以使用如下制作的半导体晶圆30C来代替工序A中使用的半导体晶圆30A或半导体晶圆分割体30B。In the above-described method of manufacturing a semiconductor device, as yet another embodiment, the semiconductor wafer 30C produced as follows may be used instead of the semiconductor wafer 30A or the semiconductor wafer divided body 30B used in the process A.

在该实施方式中,如图10的(a)和图10的(b)所示,首先在半导体晶圆W中形成改性区域30b。半导体晶圆W具有第1面Wa和第2面Wb。半导体晶圆W中的第1面Wa侧已经安装了各种半导体元件(省略图示),并且该半导体元件所需要的布线结构等(省略图示)也已经形成在第1面Wa上。In this embodiment mode, as shown in FIGS. 10( a ) and 10 ( b ), the modified region 30 b is formed in the semiconductor wafer W first. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already mounted on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements are already formed on the first surface Wa.

然后,将具有粘合面T3a的晶圆加工用胶带T3贴合于半导体晶圆W的第1面Wa侧后,以在晶圆加工用胶带T3上保持有半导体晶圆W的状态,从与晶圆加工用胶带T3相反的一侧对半导体晶圆W沿着预分割线照射聚光点位于晶圆内部的激光,利用由多光子吸收引起的消融在半导体晶圆W内形成改性区域30b。改性区域30b为用于使半导体晶圆W分离为半导体芯片单元的脆弱化区域。Then, after the tape T3 for wafer processing having the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the tape T3 for wafer processing, from the On the opposite side of the tape T3 for wafer processing, the semiconductor wafer W is irradiated with laser light whose condensing point is located inside the wafer along the pre-partition line, and a modified region 30b is formed in the semiconductor wafer W by ablation caused by multiphoton absorption. . The modified region 30b is a weakened region for separating the semiconductor wafer W into semiconductor chip units.

关于通过激光照射在半导体晶圆中在预分割线上形成改性区域30b的方法,在例如日本特开2002-192370号公报中有详细记载,该实施方式中的激光照射条件例如可在以下条件的范围内适宜调整。The method of forming the modified region 30b on the pre-division line in the semiconductor wafer by laser irradiation is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370, and the laser irradiation conditions in this embodiment may be, for example, the following conditions suitable adjustment within the range.

<激光照射条件><Laser irradiation conditions>

(A)激光(A) Laser

Figure BDA0002453576670000361
Figure BDA0002453576670000361

(B)聚光用透镜(B) Condensing lens

倍率 100倍以下Magnification 100 times or less

NA 0.55NA 0.55

对激光波长的透射率 100%以下Transmittance to laser wavelength 100% or less

(C)载置有半导体基板的载置台的移动速度280mm/秒以下(C) Movement speed of the stage on which the semiconductor substrate is placed is 280 mm/sec or less

然后,如图10的(c)所示,以在晶圆加工用胶带T3上保持有半导体晶圆W的状态,通过从第2面Wb起的磨削加工将半导体晶圆W减薄至规定厚度,由此形成能够单片化为多个半导体芯片31的半导体晶圆30C(晶圆减薄工序)。Then, as shown in FIG. 10( c ), in a state where the semiconductor wafer W is held on the tape T3 for wafer processing, the semiconductor wafer W is thinned to a predetermined thickness by grinding from the second surface Wb Thus, a semiconductor wafer 30C that can be separated into a plurality of semiconductor chips 31 is formed (wafer thinning step).

在上述半导体装置的制造方法中,在工序A中,可以使用如此制作的半导体晶圆30C来代替半导体晶圆30A作为能单片化的半导体晶圆,进行参照图3~图7的上述的各工序。In the above-described method of manufacturing a semiconductor device, in step A, the semiconductor wafer 30C thus produced may be used as a singulated semiconductor wafer instead of the semiconductor wafer 30A, and each of the above-described processes with reference to FIGS. 3 to 7 may be performed. process.

图11的(a)和图11的(b)示出该实施方式中的工序B、即在将半导体晶圆30C贴合于切割芯片接合薄膜1后进行的第1扩展工序(冷扩展工序)。FIGS. 11( a ) and 11 ( b ) show the process B in this embodiment, that is, the first expansion process (cold expansion process) performed after the semiconductor wafer 30C is bonded to the dicing die-bonding film 1 . .

在冷扩展工序中,使扩展装置所具备的中空圆柱形状的顶起构件43在切割芯片接合薄膜1的图中下侧抵接于切割带10并上升,以沿着包含半导体晶圆30C的径向和圆周方向的二维方向对贴合有半导体晶圆30C的切割芯片接合薄膜1的切割带10进行拉伸的方式进行扩展。In the cold expansion process, the hollow cylindrical-shaped lifting member 43 included in the expansion device is brought into contact with the dicing tape 10 on the lower side in the drawing of the dicing die-bonding film 1 and raised so as to follow the diameter including the semiconductor wafer 30C. The dicing tape 10 on which the dicing die-bonding film 1 of the semiconductor wafer 30C is bonded is extended in a two-dimensional direction with respect to the circumferential direction.

该扩展以使切割带10中产生例如5~28MPa、优选8~25MPa的范围内的拉伸应力的条件来进行。冷扩展工序中的温度条件为例如0℃以下,优选为-20~-5℃,更优选为-15~-5℃,更优选为-15℃。冷扩展工序中的扩展速度(使顶起构件43上升的速度)优选为1~400mm/秒。另外,冷扩展工序中的扩展量优选为50~200mm。This expansion is performed under conditions such that a tensile stress in the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa, is generated in the dicing tape 10 . The temperature conditions in the cold expansion step are, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C, and more preferably -15°C. The expansion speed in the cold expansion step (the speed at which the lifting member 43 is raised) is preferably 1 to 400 mm/sec. In addition, the expansion amount in the cold expansion step is preferably 50 to 200 mm.

通过这样的冷扩展工序,将切割芯片接合薄膜1的粘接剂层20割断为小片的粘接剂层21,得到带有粘接剂层的半导体芯片31。具体而言,在冷扩展工序中,在半导体晶圆30C中在脆弱的改性区域30b处形成裂纹,单片化为半导体芯片31。与此同时,在冷扩展工序中,在与要被扩展的切割带10的粘合剂层12密合的粘接剂层20中在半导体晶圆30C的各半导体芯片31所密合的各区域中变形受到抑制,另一方面,在位于图中的与晶圆的裂纹形成位置垂直的方向的位置处则不产生这种变形抑制作用,在该状态下切割带10中产生的拉伸应力发挥作用。其结果是,在粘接剂层20中在位于图中的与半导体芯片31间的裂纹形成位置垂直的方向的位置处被割断。By such a cold expansion process, the adhesive bond layer 20 of the dicing die-bonding film 1 is cut|disconnected into the adhesive bond layer 21 of small pieces, and the semiconductor chip 31 with an adhesive bond layer is obtained. Specifically, in the cold expansion step, cracks are formed in the fragile reformed region 30 b in the semiconductor wafer 30C, and the semiconductor chips 31 are separated into pieces. At the same time, in the cold expansion process, each area of the adhesive layer 20 that is in close contact with the adhesive layer 12 of the dicing tape 10 to be expanded is in close contact with each semiconductor chip 31 of the semiconductor wafer 30C. On the other hand, at a position located in the direction perpendicular to the crack formation position of the wafer in the figure, such a deformation suppressing effect does not occur, and the tensile stress generated in the dicing tape 10 is exerted in this state. effect. As a result, the adhesive layer 20 is cut at a position in the direction perpendicular to the crack formation position between the semiconductor chips 31 in the figure.

另外,在上述半导体装置的制造方法中,切割芯片接合薄膜1如上所述能够用于要得到带有粘接剂层的半导体芯片的用途中,还可以在用于得到将多个半导体芯片层叠而进行3维安装时的带有粘接剂层的半导体芯片的用途中使用。这种3维安装的半导体芯片31之间既可以与粘接剂层21一起夹设间隔物,也可以不夹设间隔物。Moreover, in the manufacturing method of the above-mentioned semiconductor device, the dicing die-bonding film 1 can be used for the purpose of obtaining a semiconductor chip with an adhesive bond layer as described above, or it can also be used for obtaining a plurality of semiconductor chips which are stacked in layers. It is used for the application of a semiconductor chip with an adhesive bond layer during three-dimensional mounting. A spacer may or may not be interposed between the three-dimensionally mounted semiconductor chips 31 together with the adhesive layer 21 .

[实施例][Example]

以下举出实施例更详细地对本发明进行说明,但本发明不受这些实施例任何限定。需要说明的是,将实施例及比较例中的粘合剂层的构成丙烯酸系聚合物P2的各单体成分的组成示于表中。其中,在表中,对于表示组合物的组成的各数值的单位而言,单体成分相关的数值为在该组合物内的相对的“摩尔”,单体成分以外的各成分相关的数值为相对于该丙烯酸系聚合物P2100质量份的“质量份”。Hereinafter, the present invention will be described in more detail by way of Examples, but the present invention is not limited by these Examples at all. In addition, the composition of each monomer component which comprises the acrylic polymer P2 of the adhesive layer in an Example and a comparative example is shown in a table|surface. Among them, in the table, for the unit of each numerical value representing the composition of the composition, the numerical value related to the monomer component is the relative "mol" in the composition, and the numerical value related to each component other than the monomer component is "Parts by mass" relative to 100 parts by mass of the acrylic polymer P 2 .

实施例1Example 1

(切割带)(cutting tape)

在具备冷凝管、氮气导入管、温度计、和搅拌装置的反应容器内,将包含丙烯酸2-乙基己酯(2EHA)100摩尔、丙烯酸2-羟基乙酯(HEA)30摩尔、丙烯酰基吗啉(AM)30摩尔、相对于这些单体成分100质量份为0.2质量份的作为聚合引发剂的过氧化苯甲酰、和作为聚合溶剂的甲苯的混合物在61℃下、在氮气气氛下进行6小时搅拌(聚合反应)。由此,得到含有丙烯酸系聚合物P1的聚合物溶液。In a reaction vessel equipped with a condenser tube, a nitrogen introduction tube, a thermometer, and a stirring device, 100 mol of 2-ethylhexyl acrylate (2EHA), 30 mol of 2-hydroxyethyl acrylate (HEA), and acryloyl morpholine were prepared. (AM) 30 mol, 0.2 mass part with respect to 100 mass parts of these monomer components, the mixture of benzoyl peroxide as a polymerization initiator, and toluene as a polymerization solvent was carried out at 61 degreeC under nitrogen atmosphere. hours of stirring (polymerization). Thus, a polymer solution containing the acrylic polymer P1 was obtained.

然后,将包含该含有丙烯酸系聚合物P1的聚合物溶液、2-甲基丙烯酰氧基乙基异氰酸酯(MOI)、和作为加成反应催化剂的二月桂酸二丁基锡的混合物在50℃下、在空气气氛下进行48小时搅拌(加成反应)。该反应溶液中,MOI的配混量为25摩尔。另外,该反应溶液中,二月桂酸二丁基锡的配混量相对于丙烯酸系聚合物P1 100质量份为0.01质量份。通过该加成反应,得到含有在侧链具有甲基丙烯酸酯基的丙烯酸系聚合物P2(包含源自含不饱和官能团的异氰酸酯化合物的构成单元的丙烯酸系聚合物)的聚合物溶液。Then, a mixture containing the polymer solution containing the acrylic polymer P1, 2 -methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was heated at 50°C and stirring for 48 hours in an air atmosphere (addition reaction). In this reaction solution, the compounding amount of MOI was 25 mol. Moreover, in this reaction solution, the compounding quantity of dibutyltin dilaurate was 0.01 mass part with respect to 100 mass parts of acryl-type polymer P1. By this addition reaction, the polymer solution containing the acrylic polymer P2 ( acrylic polymer containing the structural unit derived from the unsaturated functional group containing isocyanate compound) which has a methacrylate group in a side chain is obtained.

然后,在该聚合物溶液中加入相对于丙烯酸系聚合物P2 100质量份为1质量份的多异氰酸酯化合物(商品名“CORONATE L”、东曹株式会社制)、和2质量份的光聚合引发剂(商品名“Irgacure 127”、BASF公司制)并混合,进而加入甲苯进行稀释,得到粘合剂组合物。Then, 1 part by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh Corporation) and 2 parts by mass of a photopolymerization agent were added to the polymer solution with respect to 100 parts by mass of the acrylic polymer P 2 . An initiator (trade name "Irgacure 127", manufactured by BASF Corporation) was mixed, and toluene was added and diluted to obtain an adhesive composition.

然后,使用涂抹器在具有实施了有机硅脱模处理的面的PET隔离体(厚度50μm)的有机硅脱模处理面上涂布粘合剂组合物而形成粘合剂组合物层。然后,对该组合物层进行基于120℃下2分钟的加热的脱溶剂,在PET隔离体上形成厚度10μm的粘合剂层。Then, the pressure-sensitive adhesive composition was applied on the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a pressure-sensitive adhesive composition layer. Then, the composition layer was subjected to desolvation by heating at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm on the PET separator.

然后,使用层压机,在室温下将作为基材的EVA薄膜(厚度125μm)贴合于该粘合剂层的露出面。然后对该贴合体在50℃下进行24小时的保存。如上所述地操作,制作实施例1的切割带。Then, using a laminator, an EVA film (thickness: 125 μm) as a base material was bonded to the exposed surface of the pressure-sensitive adhesive layer at room temperature. Then, the bonded body was stored at 50°C for 24 hours. As described above, the dicing tape of Example 1 was produced.

(粘接剂层)(adhesive layer)

将丙烯酸系聚合物A1(丙烯酸乙酯与丙烯酸丁酯与丙烯腈与甲基丙烯酸缩水甘油酯的共聚物、质均分子量为120万、玻璃化转变温度为0℃、环氧值为0.4eq/kg)54质量份、固体酚醛树脂(商品名“MEHC-7851SS”、23℃下为固体,明和化成株式会社制)3质量份、液态酚醛树脂(商品名“MEH-8000H”、23℃下为液态、明和化成株式会社制)3质量份、和二氧化硅填料(商品名“SO-C2”、平均粒径为0.5μm、ADMATECHS CO.,LTD.制)40质量份加入到甲乙酮中并混合,以使室温下的粘度成为700mPa·s的方式调整浓度,得到粘接剂组合物。Acrylic polymer A1 (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, mass average molecular weight is 1.2 million, glass transition temperature is 0°C, and epoxy value is 0.4eq /kg) 54 parts by mass, solid phenolic resin (trade name "MEHC-7851SS", solid at 23°C, manufactured by Meiwa Chemical Co., Ltd.) 3 mass parts, liquid phenol resin (trade name "MEH-8000H", 23°C In a liquid state, 3 parts by mass of Meiwa Chemical Co., Ltd., and 40 parts by mass of a silica filler (trade name "SO-C2", average particle diameter of 0.5 μm, manufactured by ADMATECHS CO., LTD.) were added to methyl ethyl ketone and Mixing was carried out, and the density|concentration was adjusted so that the viscosity at room temperature might become 700 mPa*s, and the adhesive composition was obtained.

然后,使用涂抹器在具有实施了有机硅脱模处理的面的PET隔离体(厚度38μm)的有机硅脱模处理面上涂布粘接剂组合物而形成涂膜,对该涂膜在130℃下进行2分钟的脱溶剂。如上所述地操作,在PET隔离体上制作实施例1中的厚度10μm的粘接剂层。Then, using an applicator, the adhesive composition was applied to the silicone release-treated surface of the PET separator (thickness 38 μm) having the silicone release-treated surface to form a coating film, and the coating film was placed at 130 Å. The desolvation was carried out at °C for 2 minutes. As described above, the adhesive layer having a thickness of 10 μm in Example 1 was produced on the PET separator.

(切割芯片接合薄膜的制作)(Production of dicing die-bonding film)

从实施例1的切割带将PET隔离体剥离,将实施例1的粘接剂层贴合于露出的粘合剂层。贴合中使用手压辊。然后,从切割带侧照射300mJ的紫外线,制作实施例1的切割芯片接合薄膜。The PET separator was peeled off from the dicing tape of Example 1, and the adhesive layer of Example 1 was bonded to the exposed adhesive layer. Use a hand roller for lamination. Then, 300 mJ of ultraviolet rays were irradiated from the dicing tape side, and the dicing die-bonding film of Example 1 was produced.

实施例2Example 2

将粘合剂层的构成丙烯酸系聚合物P2(包含源自含不饱和官能团的异氰酸酯化合物的结构单元的丙烯酸系聚合物)的丙烯酰基吗啉(AM)的配混量变更为10摩尔,除此以外,与实施例1同样地操作,制作实施例2的切割带及切割芯片接合薄膜。The compounding amount of acryloyl morpholine (AM) constituting the acrylic polymer P 2 (acrylic polymer including a structural unit derived from an unsaturated functional group-containing isocyanate compound) of the pressure-sensitive adhesive layer was changed to 10 mol, Except for this, it carried out similarly to Example 1, and produced the dicing tape and the dicing die-bonding film of Example 2.

实施例3Example 3

不对粘合剂层照射紫外线,除此以外,与实施例1同样地操作,制作实施例3的切割带及切割芯片接合薄膜。Except not irradiating an ultraviolet-ray to an adhesive layer, it carried out similarly to Example 1, and produced the dicing tape and the dicing die-bonding film of Example 3.

实施例4Example 4

粘合剂层的制作中,将多异氰酸酯化合物(商品名“CORONATE L”、东曹株式会社制)的配混量设为2质量份,除此以外,与实施例3同样地操作,制作实施例4的切割带及切割芯片接合薄膜。In the preparation of the pressure-sensitive adhesive layer, the preparation was carried out in the same manner as in Example 3, except that the compounding amount of the polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh Corporation) was 2 parts by mass. The dicing tape and the dicing die-bonding film of Example 4.

实施例5Example 5

不对粘合剂层照射紫外线,除此以外,与实施例2同样地操作,制作实施例5的切割带及切割芯片接合薄膜。Except not irradiating an ultraviolet-ray to an adhesive layer, it carried out similarly to Example 2, and produced the dicing tape and the dicing die-bonding film of Example 5.

实施例6Example 6

粘合剂层的制作中,将多异氰酸酯化合物(商品名“CORONATE L”、东曹株式会社制)的配混量设为2质量份,除此以外,与实施例5同样地操作,制作实施例6的切割带及切割芯片接合薄膜。In the preparation of the pressure-sensitive adhesive layer, the preparation was carried out in the same manner as in Example 5, except that the compounding amount of the polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh Corporation) was 2 parts by mass The dicing tape and the dicing die-bonding film of Example 6.

实施例7Example 7

(切割带)(cutting tape)

在具备冷凝管、氮气导入管、温度计、和搅拌装置的反应容器内,将包含丙烯酸乙酯(EA)50摩尔、丙烯酸丁酯(BA)50摩尔、丙烯酸2-羟基乙酯(HEA)20摩尔、相对于这些单体成分100质量份为0.2质量份的作为聚合引发剂的过氧化苯甲酰、和作为聚合溶剂的甲苯的混合物在61℃下在氮气气氛下进行6小时搅拌(聚合反应)。由此,得到含有丙烯酸系聚合物P1的聚合物溶液。In a reaction vessel equipped with a condenser tube, a nitrogen introduction tube, a thermometer, and a stirring device, 50 mol of ethyl acrylate (EA), 50 mol of butyl acrylate (BA), and 20 mol of 2-hydroxyethyl acrylate (HEA) were contained , A mixture of 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent with respect to 100 parts by mass of these monomer components was stirred at 61° C. for 6 hours under a nitrogen atmosphere (polymerization reaction) . Thus, a polymer solution containing the acrylic polymer P1 was obtained.

然后,将包含该含有丙烯酸系聚合物P1的聚合物溶液、2-甲基丙烯酰氧基乙基异氰酸酯(MOI)、和作为加成反应催化剂的二月桂酸二丁基锡的混合物在50℃下在空气气氛下进行48小时搅拌(加成反应)。该反应溶液中,MOI的配混量为18摩尔。另外,该反应溶液中,二月桂酸二丁基锡的配混量相对于丙烯酸系聚合物P1 100质量份为0.01质量份。通过该加成反应,得到含有在侧链具有甲基丙烯酸酯基的丙烯酸系聚合物P2(包含源自含不饱和官能团的异氰酸酯化合物的结构单元的丙烯酸系聚合物)的聚合物溶液。Then, a mixture containing the polymer solution containing the acrylic polymer P1, 2 -methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was heated at 50°C Stirring (addition reaction) was carried out under air atmosphere for 48 hours. In this reaction solution, the compounding amount of MOI was 18 moles. Moreover, in this reaction solution, the compounding quantity of dibutyltin dilaurate was 0.01 mass part with respect to 100 mass parts of acryl-type polymer P1. Through this addition reaction, a polymer solution containing an acrylic polymer P 2 having a methacrylate group in a side chain (acrylic polymer containing a structural unit derived from an unsaturated functional group-containing isocyanate compound) is obtained.

然后,在该聚合物溶液中加入相对于丙烯酸系聚合物P2 100质量份为1质量份的多异氰酸酯化合物(商品名“CORONATE L”、东曹株式会社制)、和2质量份的光聚合引发剂(商品名“Irgacure 127”、BASF公司制)并混合,进而加入甲苯进行稀释,得到粘合剂组合物。Then, 1 part by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh Corporation) and 2 parts by mass of a photopolymerization agent were added to the polymer solution with respect to 100 parts by mass of the acrylic polymer P 2 . An initiator (trade name "Irgacure 127", manufactured by BASF Corporation) was mixed, and toluene was added and diluted to obtain an adhesive composition.

然后,使用涂抹器在具有实施了有机硅脱模处理的面的PET隔离体(厚度50μm)的有机硅脱模处理面上涂布粘合剂组合物而形成粘合剂组合物层。然后,对该组合物层进行基于120℃下2分钟的加热的脱溶剂,在PET隔离体上形成厚度10μm的粘合剂层。Then, the pressure-sensitive adhesive composition was applied on the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a pressure-sensitive adhesive composition layer. Then, the composition layer was subjected to desolvation by heating at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm on the PET separator.

然后,使用层压机,在室温下将作为基材的EVA薄膜(厚度125μm)贴合于该粘合剂层的露出面。然后对该贴合体在50℃下进行24小时的保存。如上所述地操作,制作实施例7的切割带。Then, using a laminator, an EVA film (thickness: 125 μm) as a base material was bonded to the exposed surface of the pressure-sensitive adhesive layer at room temperature. Then, the bonded body was stored at 50°C for 24 hours. As described above, the dicing tape of Example 7 was produced.

(切割芯片接合薄膜的制作)(Production of dicing die-bonding film)

从实施例7的切割带将PET隔离体剥离,将实施例1的粘接剂层贴合于露出的粘合剂层。贴合中使用手压辊。如此操作,制作实施例7的切割芯片接合薄膜。The PET separator was peeled off from the dicing tape of Example 7, and the adhesive layer of Example 1 was bonded to the exposed adhesive layer. Use a hand roller for lamination. In this way, the dicing die-bonding film of Example 7 was produced.

实施例8Example 8

粘合剂层的制作中,将多异氰酸酯化合物(商品名“CORONATE L”、东曹株式会社制)的配混量设为2质量份,除此以外,与实施例7同样地操作,制作实施例8的切割带及切割芯片接合薄膜。In the preparation of the pressure-sensitive adhesive layer, the preparation was carried out in the same manner as in Example 7, except that the compounding amount of the polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh Corporation) was set to 2 parts by mass The dicing tape and the dicing die-bonding film of Example 8.

比较例1Comparative Example 1

(切割带)(cutting tape)

在具备冷凝管、氮气导入管、温度计、和搅拌装置的反应容器内,将包含丙烯酸2-乙基己酯(2EHA)100摩尔、丙烯酸2-羟基乙酯(HEA)20摩尔、相对于这些单体成分100质量份为0.2质量份的作为聚合引发剂的过氧化苯甲酰、和作为聚合溶剂的甲苯的混合物在61℃下在氮气气氛下进行6小时搅拌(聚合反应)。由此,得到含有丙烯酸系聚合物P1的聚合物溶液。In a reaction vessel equipped with a condenser tube, a nitrogen gas introduction tube, a thermometer, and a stirring device, 100 mols of 2-ethylhexyl acrylate (2EHA) and 20 mols of 2-hydroxyethyl acrylate (HEA) were prepared relative to these monomers. A mixture of 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 61° C. for 6 hours under a nitrogen atmosphere (polymerization reaction) for 100 parts by mass of the body. Thus, a polymer solution containing the acrylic polymer P1 was obtained.

然后,将包含该含有丙烯酸系聚合物P1的聚合物溶液、2-甲基丙烯酰氧基乙基异氰酸酯(MOI)、和作为加成反应催化剂的二月桂酸二丁基锡的混合物在50℃下在空气气氛下进行48小时搅拌(加成反应)。该反应溶液中,MOI的配混量为18摩尔。另外,该反应溶液中,二月桂酸二丁基锡的配混量相对于丙烯酸系聚合物P1 100质量份为0.01质量份。通过该加成反应,得到含有在侧链具有甲基丙烯酸酯基的丙烯酸系聚合物P2(包含源自含不饱和官能团的异氰酸酯化合物的结构单元的丙烯酸系聚合物)的聚合物溶液。Then, a mixture containing the polymer solution containing the acrylic polymer P1, 2 -methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was heated at 50°C Stirring (addition reaction) was carried out under air atmosphere for 48 hours. In this reaction solution, the compounding amount of MOI was 18 moles. Moreover, in this reaction solution, the compounding quantity of dibutyltin dilaurate was 0.01 mass part with respect to 100 mass parts of acryl-type polymer P1. Through this addition reaction, a polymer solution containing an acrylic polymer P 2 having a methacrylate group in a side chain (acrylic polymer containing a structural unit derived from an unsaturated functional group-containing isocyanate compound) is obtained.

然后,在该聚合物溶液中加入相对于丙烯酸系聚合物P2 100质量份为0.5质量份的多异氰酸酯化合物(商品名“CORONATE L”、东曹株式会社制)、和2质量份的光聚合引发剂(商品名“Irgacure 127”、BASF公司制)并混合,进而加入甲苯进行稀释,得到粘合剂组合物。Then, 0.5 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh Corporation) and 2 parts by mass of a photopolymerization agent were added to the polymer solution with respect to 100 parts by mass of the acrylic polymer P 2 . An initiator (trade name "Irgacure 127", manufactured by BASF Corporation) was mixed, and toluene was added and diluted to obtain an adhesive composition.

然后,使用涂抹器在具有实施了有机硅脱模处理的面的PET隔离体(厚度50μm)的有机硅脱模处理面上涂布粘合剂组合物而形成粘合剂组合物层。然后,对该组合物层进行基于120℃下2分钟的加热的脱溶剂,在PET隔离体上形成厚度10μm的粘合剂层。Then, the pressure-sensitive adhesive composition was applied on the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a pressure-sensitive adhesive composition layer. Then, the composition layer was subjected to desolvation by heating at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm on the PET separator.

然后,使用层压机,在室温下将作为基材的EVA薄膜(厚度125μm)贴合于该粘合剂层的露出面。然后对该贴合体在50℃下进行24小时的保存。如上所述地操作,制作比较例1的切割带。Then, using a laminator, an EVA film (thickness: 125 μm) as a base material was bonded to the exposed surface of the pressure-sensitive adhesive layer at room temperature. Then, the bonded body was stored at 50°C for 24 hours. As described above, the dicing tape of Comparative Example 1 was produced.

(切割芯片接合薄膜的制作)(Production of dicing die-bonding film)

从比较例1的切割带将PET隔离体剥离,将实施例1的粘接剂层贴合于露出的粘合剂层。贴合中使用手压辊。如此操作,制作比较例1的切割芯片接合薄膜。The PET separator was peeled off from the dicing tape of Comparative Example 1, and the adhesive layer of Example 1 was bonded to the exposed adhesive layer. Use a hand roller for lamination. In this way, the dicing die-bonding film of Comparative Example 1 was produced.

比较例2Comparative Example 2

粘合剂层的制作中,将多异氰酸酯化合物(商品名“CORONATE L”、东曹株式会社制)的配混量设为1质量份,除此以外,与比较例1同样地操作,制作比较例2的切割带及切割芯片接合薄膜。In the preparation of the pressure-sensitive adhesive layer, except that the compounding amount of the polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh Corporation) was set to 1 part by mass, it was carried out in the same manner as in Comparative Example 1 to prepare a comparison. The dicing tape and the dicing die-bonding film of Example 2.

比较例3Comparative Example 3

粘合剂层的制作中,将多异氰酸酯化合物(商品名“CORONATE L”、东曹株式会社制)的配混量设为2质量份,除此以外,与比较例1同样地操作,制作比较例3的切割带及切割芯片接合薄膜。In the preparation of the pressure-sensitive adhesive layer, a comparison was made in the same manner as in Comparative Example 1, except that the compounding amount of the polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh Corporation) was set to 2 parts by mass The dicing tape and the dicing die-bonding film of Example 3.

比较例4Comparative Example 4

(切割带)(cutting tape)

在具备冷凝管、氮气导入管、温度计、和搅拌装置的反应容器内,将包含甲基丙烯酸月桂酯(LMA)100摩尔、甲基丙烯酸2-羟基乙酯(HEMA)20摩尔、相对于这些单体成分100质量份为0.2质量份的作为聚合引发剂的过氧化苯甲酰、和作为聚合溶剂的甲苯的混合物在61℃下在氮气气氛下进行6小时搅拌(聚合反应)。由此,得到含有丙烯酸系聚合物P1的聚合物溶液。In a reaction vessel equipped with a condenser tube, a nitrogen gas introduction tube, a thermometer, and a stirring device, 100 mols of lauryl methacrylate (LMA) and 20 mols of 2-hydroxyethyl methacrylate (HEMA) were prepared. A mixture of 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 61° C. for 6 hours under a nitrogen atmosphere (polymerization reaction) for 100 parts by mass of the body. Thus, a polymer solution containing the acrylic polymer P1 was obtained.

然后,将包含该含有丙烯酸系聚合物P1的聚合物溶液、2-甲基丙烯酰氧基乙基异氰酸酯(MOI)、和作为加成反应催化剂的二月桂酸二丁基锡的混合物在50℃下在空气气氛下进行48小时搅拌(加成反应)。该反应溶液中,MOI的配混量为18摩尔。另外,该反应溶液中,二月桂酸二丁基锡的配混量相对于丙烯酸系聚合物P1 100质量份为0.01质量份。通过该加成反应,得到含有在侧链具有甲基丙烯酸酯基的丙烯酸系聚合物P2(包含源自含不饱和官能团的异氰酸酯化合物的结构单元的丙烯酸系聚合物)的聚合物溶液。Then, a mixture containing the polymer solution containing the acrylic polymer P1, 2 -methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was heated at 50°C Stirring (addition reaction) was carried out under air atmosphere for 48 hours. In this reaction solution, the compounding amount of MOI was 18 moles. Moreover, in this reaction solution, the compounding quantity of dibutyltin dilaurate was 0.01 mass part with respect to 100 mass parts of acryl-type polymer P1. Through this addition reaction, a polymer solution containing an acrylic polymer P 2 having a methacrylate group in a side chain (acrylic polymer containing a structural unit derived from an unsaturated functional group-containing isocyanate compound) is obtained.

然后,在该聚合物溶液中加入相对于丙烯酸系聚合物P2 100质量份为0.5质量份的多异氰酸酯化合物(商品名“CORONATE L”、东曹株式会社制)、和2质量份的光聚合引发剂(商品名“Irgacure 127”、BASF公司制)并混合,进而加入甲苯进行稀释,得到粘合剂组合物。Then, 0.5 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh Corporation) and 2 parts by mass of a photopolymerization agent were added to the polymer solution with respect to 100 parts by mass of the acrylic polymer P 2 . An initiator (trade name "Irgacure 127", manufactured by BASF Corporation) was mixed, and toluene was added and diluted to obtain an adhesive composition.

然后,使用涂抹器在具有实施了有机硅脱模处理的面的PET隔离体(厚度50μm)的有机硅脱模处理面上涂布粘合剂组合物而形成粘合剂组合物层。然后,对该组合物层进行基于120℃下2分钟的加热的脱溶剂,在PET隔离体上形成厚度10μm的粘合剂层。Then, the pressure-sensitive adhesive composition was applied on the silicone release-treated surface of the PET separator (thickness 50 μm) having the silicone release-treated surface using an applicator to form a pressure-sensitive adhesive composition layer. Then, the composition layer was subjected to desolvation by heating at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm on the PET separator.

然后,使用层压机,在室温下将作为基材的EVA薄膜(厚度125μm)贴合于该粘合剂层的露出面。然后对该贴合体在50℃下进行24小时的保存。如上所述地操作,制作比较例4的切割带。Then, using a laminator, an EVA film (thickness: 125 μm) as a base material was bonded to the exposed surface of the pressure-sensitive adhesive layer at room temperature. Then, the bonded body was stored at 50°C for 24 hours. As described above, the dicing tape of Comparative Example 4 was produced.

(切割芯片接合薄膜的制作)(Production of dicing die-bonding film)

从比较例4的切割带将PET隔离体剥离,将实施例1的粘接剂层贴合于露出的粘合剂层。贴合中使用手压辊。如此操作,制作比较例4的切割芯片接合薄膜。The PET separator was peeled off from the dicing tape of Comparative Example 4, and the adhesive layer of Example 1 was bonded to the exposed adhesive layer. Use a hand roller for lamination. In this way, the dicing die-bonding film of Comparative Example 4 was produced.

比较例5Comparative Example 5

粘合剂层的制作中,将多异氰酸酯化合物(商品名“CORONATE L”、东曹株式会社制)的配混量设为1质量份,除此以外,与比较例4同样地操作,制作比较例5的切割带及切割芯片接合薄膜。In the preparation of the pressure-sensitive adhesive layer, except that the compounding amount of the polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh Corporation) was set to 1 part by mass, it was carried out in the same manner as in Comparative Example 4 to prepare a comparison. The dicing tape and the dicing die-bonding film of Example 5.

比较例6Comparative Example 6

粘合剂层的制作中,使用涂抹器在具有实施了有机硅脱模处理的面的PET隔离体(厚度50μm、脱模处理面的算术平均表面粗糙度为1.0μm)的有机硅脱模处理面上涂布粘合剂组合物而形成粘合剂组合物层,除此以外,与实施例2同样地操作,制作比较例6的切割带及切割芯片接合薄膜。In the preparation of the pressure-sensitive adhesive layer, a silicone mold release treatment was performed on a PET separator (thickness 50 μm, arithmetic mean surface roughness of the mold release treated surface: 1.0 μm) having a silicone mold release treated surface using an applicator A dicing tape and a dicing die-bonding film of Comparative Example 6 were produced in the same manner as in Example 2, except that the adhesive composition was coated on the surface to form an adhesive composition layer.

<评价><Evaluation>

对实施例及比较例中得到的切割芯片接合薄膜进行以下的评价。将结果示于表中。The following evaluations were performed on the dicing die-bonding films obtained in Examples and Comparative Examples. The results are shown in the table.

(1)表面粗糙度(1) Surface roughness

对实施例及比较例中得到的切割芯片接合薄膜的、未层叠有粘接剂层的区域内的粘合剂层表面,使用激光共聚焦显微镜(商品名“形状测定激光显微镜VK-X100”、KEYENCECORPORATION制),以目镜10倍、物镜20倍的倍率测定算术平均表面粗糙度(Ra)。The surface of the adhesive layer of the dicing die-bonding films obtained in the Examples and Comparative Examples in the region where the adhesive layer was not laminated was examined using a laser confocal microscope (trade name "Shape Measuring Laser Microscope VK-X100", KEYENCE CORPORATION), and the arithmetic mean surface roughness (Ra) was measured at a magnification of 10 times the eyepiece and 20 times the objective lens.

(2)水接触角(2) Water contact angle

使用接触角仪“CA-X型”(协和界面科学株式会社制),在粘合剂层表面滴下1滴试剂,测定此时的角度,由此测定水接触角。Using a contact angle meter "CA-X type" (manufactured by Kyowa Interface Science Co., Ltd.), one drop of the reagent was dropped on the surface of the pressure-sensitive adhesive layer, and the angle at that time was measured to measure the water contact angle.

(3)根据Kaelble Uy式求出的表面自由能的极性成分的值(3) The value of the polar component of the surface free energy obtained from the Kaelble Uy equation

与上述水接触角的测定同样地操作,测定粘合剂层表面的二碘甲烷接触角。然后,将接触角评价中测定的水接触角设为θw、二碘甲烷接触角设为θi,根据下述式(2)及(3)求出γsp,作为表面自由能的极性成分的值。需要说明的是,γw为72.8mJ/m2,γwd为21.8mJ/m2,γwp为51.0mJ/m2,γi为50.8mJ/m2,γid为48.5mJ/m2,γip为2.3mJ/m2In the same manner as the measurement of the above-mentioned water contact angle, the diiodomethane contact angle of the pressure-sensitive adhesive layer surface was measured. Then, using the water contact angle measured in the contact angle evaluation as θw and the diiodomethane contact angle as θi, γs p was obtained from the following equations (2) and (3) as the value of the polar component of the surface free energy. value. It should be noted that γw is 72.8 mJ/m 2 , γw d is 21.8 mJ/m 2 , γw p is 51.0 mJ/m 2 , γi is 50.8 mJ/m 2 , γi d is 48.5 mJ/m 2 , and γi p is 2.3mJ/m 2 .

γw(1+cosθw)=2(γsdγwd)1/2+2(γspγwp)1/2 (2)γw(1+cosθw)=2(γs d γw d ) 1/2 +2(γs p γw p ) 1/2 (2)

γi(1+cosθi)=2(γsdγid)1/2+2(γspγip)1/2 (3)γi(1+cosθi)=2(γs d γi d ) 1/2 +2(γs p γi p ) 1/2 (3)

(4)带有芯片接合薄膜的半导体芯片的浮起(4) Floating of semiconductor chip with die-bonding film

使用商品名“ML300-Integration”(株式会社东京精密制)作为激光加工装置,使聚光点对准12英寸的半导体晶圆的内部,沿格子状(10mm×10mm)的预分割线照射激光,在半导体晶圆的内部形成改性区域。对于激光的照射,在下述的条件下进行。Using the trade name "ML300-Integration" (manufactured by Tokyo Seiki Co., Ltd.) as a laser processing device, the light-converging point was aligned with the inside of a 12-inch semiconductor wafer, and the laser was irradiated along the pre-segmentation lines in a lattice shape (10 mm × 10 mm). A modified region is formed inside the semiconductor wafer. The irradiation of the laser light was performed under the following conditions.

(A)激光(A) Laser

Figure BDA0002453576670000461
Figure BDA0002453576670000461

(B)聚光用透镜(B) Condensing lens

倍率 50倍magnification 50 times

NA 0.55NA 0.55

对激光波长的透射率 60%Transmittance to laser wavelength 60%

(C)载置有半导体基板的载置台的移动速度100mm/秒(C) Movement speed of the stage on which the semiconductor substrate is placed: 100 mm/sec

在半导体晶圆内部形成改性区域后,将背面研磨用保护带贴合于半导体晶圆的表面,使用背面研磨机(商品名“DGP 8760”、DISCO Inc.制),对背面进行磨削以使半导体晶圆的厚度成为30μm。After forming the modified region inside the semiconductor wafer, a protective tape for back grinding is attached to the surface of the semiconductor wafer, and the back surface is ground using a back grinding machine (trade name "DGP 8760", manufactured by DISCO Inc.) The thickness of the semiconductor wafer was 30 μm.

将形成有改性区域的半导体晶圆和切割环贴合于实施例及比较例中得到的切割芯片接合薄膜。然后,使用芯片分离装置(商品名“DDS2300”、DISCO Inc.制),进行半导体晶圆及芯片接合薄膜的割断。具体而言,首先,使用冷扩展单元在温度-15℃、扩展速度100mm/秒、扩展量15mm的条件下进行冷扩展将半导体晶圆割断。冷扩展后,确认割断及带有芯片接合薄膜的半导体芯片的浮起不存在问题。The semiconductor wafer and the dicing ring on which the modified region was formed were bonded to the dicing die-bonding films obtained in Examples and Comparative Examples. Then, using a die separation apparatus (trade name "DDS2300", manufactured by DISCO Inc.), the semiconductor wafer and the die-bonding film were cut. Specifically, first, a cold expansion unit is used to perform cold expansion under the conditions of a temperature of -15° C., an expansion speed of 100 mm/sec, and an expansion amount of 15 mm, to cut the semiconductor wafer. After the cold expansion, it was confirmed that there was no problem with the dicing and the floating of the semiconductor chip with the die-bonding film.

半导体晶圆及芯片接合薄膜的割断后,直接使用上述冷扩展单元,在室温、扩展速度0.3mm/秒、扩展量8mm的条件下进行常温扩展。然后,用显微镜观察芯片接合薄膜从切割带浮起的部分的面积(将芯片接合薄膜整体的面积设为100%时浮起的带有芯片接合薄膜的半导体芯片的面积的比例)。将浮起的部分的面积的比例小于30%的情况评价为○、30~50%的情况评价为△、超过50%的情况评价为×。After the severing of the semiconductor wafer and the die-bonding film, the above-mentioned cold expansion unit was used as it was, and room temperature expansion was performed under the conditions of room temperature, expansion speed of 0.3 mm/sec, and expansion amount of 8 mm. Then, the area of the portion where the die-bonding film floated from the dicing tape (the ratio of the area of the semiconductor chip with the die-bonding film that floated when the area of the entire die-bonding film was 100%) was observed with a microscope. The case where the ratio of the area of the raised portion was less than 30% was evaluated as ○, the case of 30 to 50% was evaluated as Δ, and the case exceeding 50% was evaluated as ×.

[表1][Table 1]

Figure BDA0002453576670000471
Figure BDA0002453576670000471

[表2][Table 2]

Figure BDA0002453576670000481
Figure BDA0002453576670000481

作为以上的总结,以下附上本发明的构成及其变形。As a summary of the above, the constitution of the present invention and its modifications are attached below.

[1]一种切割芯片接合薄膜,其具备:[1] A dicing die-bonding film comprising:

切割带,具有包含基材和粘合剂层的层叠结构;及A dicing tape having a laminated structure comprising a substrate and an adhesive layer; and

粘接剂层,以可剥离的方式密合于前述切割带中的前述粘合剂层,an adhesive layer, which is adhered to the above-mentioned adhesive layer in the above-mentioned dicing tape in a releasable manner,

前述粘合剂层中,前述粘接剂层密合侧的表面的水接触角为110°以下、算术平均表面粗糙度Ra为1.0μm以下。In the said pressure-sensitive adhesive layer, the water contact angle of the surface of the said pressure-sensitive adhesive layer close-contact side is 110 degrees or less, and the arithmetic mean surface roughness Ra is 1.0 micrometer or less.

[2]根据[1]所述的切割芯片接合薄膜,其中,前述水接触角为108°以下(优选105°以下)。[2] The dicing die-bonding film according to [1], wherein the water contact angle is 108° or less (preferably 105° or less).

[3]根据[1]或[2]所述的切割芯片接合薄膜,其中,前述水接触角为80°以上(优选84°以上、更优选88°以上)。[3] The dicing die-bonding film according to [1] or [2], wherein the water contact angle is 80° or more (preferably 84° or more, more preferably 88° or more).

[4]根据[1]~[3]中任一项所述的切割芯片接合薄膜,其中,前述算术平均表面粗糙度Ra为0.5μm以下(优选0.3μm以下)。[4] The dicing die-bonding film according to any one of [1] to [3], wherein the arithmetic mean surface roughness Ra is 0.5 μm or less (preferably 0.3 μm or less).

[5]根据[1]~[4]中任一项所述的切割芯片接合薄膜,其中,前述粘合剂层的前述表面的、使用水的接触角和二碘甲烷的接触角根据Kaelble Uy式求出的表面自由能的极性成分的值为0.10以上(优选0.20以上、更优选0.40以上)。[5] The dicing die-bonding film according to any one of [1] to [4], wherein the contact angle using water and the contact angle of diiodomethane on the surface of the adhesive layer are based on Kaelble Uy The value of the polar component of the surface free energy obtained by the formula is 0.10 or more (preferably 0.20 or more, more preferably 0.40 or more).

[6]根据[1]~[5]中任一项所述的切割芯片接合薄膜,其中,前述粘合剂层包含丙烯酸系聚合物作为基础聚合物。[6] The dicing die-bonding film according to any one of [1] to [5], wherein the adhesive layer contains an acrylic polymer as a base polymer.

[7]根据[6]所述的切割芯片接合薄膜,其中,前述丙烯酸系聚合物包含任选具有烷氧基的含烃基(甲基)丙烯酸酯作为单体成分。[7] The dicing die-bonding film according to [6], wherein the acrylic polymer contains, as a monomer component, a hydrocarbon group-containing (meth)acrylate which may have an alkoxy group.

[8]根据[7]所述的切割芯片接合薄膜,其中,前述任选具有烷氧基的含烃基(甲基)丙烯酸酯的酯部中的碳数的总数为6~10。[8] The dicing die-bonding film according to [7], wherein the total number of carbon atoms in the ester portion of the hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group is 6 to 10.

[9]根据[6]所述的切割芯片接合薄膜,其中,前述任选具有烷氧基的含烃基(甲基)丙烯酸酯的酯部中的碳数的总数为2~4。[9] The dicing die-bonding film according to [6], wherein the total number of carbon atoms in the ester portion of the hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group is 2 to 4.

[10]根据[7]~[9]中任一项所述的切割芯片接合薄膜,其中,用于形成前述丙烯酸系聚合物的全部单体成分中前述任选具有烷氧基的含烃基(甲基)丙烯酸酯的比例为20摩尔%以上(优选30摩尔%以上、更优选40摩尔%以上)。[10] The dicing die-bonding film according to any one of [7] to [9], wherein the hydrocarbon group ( The ratio of meth)acrylate is 20 mol% or more (preferably 30 mol% or more, more preferably 40 mol% or more).

[11]根据[6]~[10]中任一项所述的切割芯片接合薄膜,其中,前述丙烯酸系聚合物含有含羟基单体作为单体成分。[11] The dicing die-bonding film according to any one of [6] to [10], wherein the acrylic polymer contains a hydroxyl group-containing monomer as a monomer component.

[12]根据[11]所述的切割芯片接合薄膜,其中,前述含羟基单体为(甲基)丙烯酸2-羟基乙酯。[12] The dicing die-bonding film according to [11], wherein the hydroxyl group-containing monomer is 2-hydroxyethyl (meth)acrylate.

[13]根据[11]或[12]所述的切割芯片接合薄膜,其中,用于形成前述丙烯酸系聚合物的全部单体成分中的前述含羟基单体的比例为5~80摩尔%。[13] The dicing die-bonding film according to [11] or [12], wherein the ratio of the hydroxyl group-containing monomer in the total monomer components for forming the acrylic polymer is 5 to 80 mol %.

[14]根据[6]~[13]中任一项所述的切割芯片接合薄膜,其中,丙烯酸系聚合物含有含氮原子单体(优选含吗啉基单体、更优选(甲基)丙烯酰基吗啉)作为单体成分。[14] The dicing die-bonding film according to any one of [6] to [13], wherein the acrylic polymer contains a nitrogen atom-containing monomer (preferably a morpholine group-containing monomer, more preferably (methyl) acryloyl morpholine) as a monomer component.

[15]根据[14]所述的切割芯片接合薄膜,其中,用于形成前述丙烯酸系聚合物的全部单体成分中的前述含氮原子单体的比例为3~50摩尔%。[15] The dicing die-bonding film according to [14], wherein the ratio of the nitrogen atom-containing monomer in the total monomer components for forming the acrylic polymer is 3 to 50 mol %.

[16]根据[6]~[15]中任一项所述的切割芯片接合薄膜,其中,用于形成前述丙烯酸系聚合物的全部单体成分中的前述含羟基单体和前述含氮原子单体的合计比例为10~60摩尔%。[16] The dicing die-bonding film according to any one of [6] to [15], wherein the hydroxyl-containing monomer and the nitrogen-containing atom in all monomer components for forming the acrylic polymer The total ratio of the monomers is 10 to 60 mol %.

[17]根据[6]~[16]中任一项所述的切割芯片接合薄膜,其中,前述丙烯酸系聚合物含有:源自具有第1官能团的单体的结构单元、以及源自具有可与前述第1官能团反应的第2官能团及辐射线聚合性官能团的化合物的结构部。[17] The dicing die-bonding film according to any one of [6] to [16], wherein the acrylic polymer contains: a structural unit derived from a monomer having a first functional group; The structure part of the compound of the 2nd functional group and the radiation polymerizable functional group which react with the said 1st functional group.

[18]根据[17]所述的切割芯片接合薄膜,其中,前述第1官能团与前述第2官能团的组合为羟基与异氰酸酯基的组合、或异氰酸酯基与羟基的组合。[18] The dicing die-bonding film according to [17], wherein the combination of the first functional group and the second functional group is a combination of a hydroxyl group and an isocyanate group, or a combination of an isocyanate group and a hydroxyl group.

[19]根据[17]所述的切割芯片接合薄膜,其中,前述第1官能团为羟基、前述第2官能团为异氰酸酯基。[19] The dicing die-bonding film according to [17], wherein the first functional group is a hydroxyl group and the second functional group is an isocyanate group.

[20]根据[17]~[19]中任一项所述的切割芯片接合薄膜,其中,前述具有第2官能团及辐射线聚合性官能团的化合物为具有辐射线聚合性的碳-碳双键(特别是(甲基)丙烯酰基)及异氰酸酯基的化合物。[20] The dicing die-bonding film according to any one of [17] to [19], wherein the compound having the second functional group and the radiation polymerizable functional group is a radiation polymerizable carbon-carbon double bond (especially (meth)acryloyl group) and the compound of an isocyanate group.

[21]根据[17]~[20]中任一项所述的切割芯片接合薄膜,其中,前述具有第2官能团及辐射线聚合性官能团的化合物为2-(甲基)丙烯酰氧基乙基异氰酸酯。[21] The dicing die-bonding film according to any one of [17] to [20], wherein the compound having the second functional group and a radiation polymerizable functional group is 2-(meth)acryloyloxyethy base isocyanate.

[22]根据[17]~[21]中任一项所述的切割芯片接合薄膜,其中,前述源自具有第1官能团的单体的结构单元与前述具有第2官能团及辐射线聚合性官能团的化合物的摩尔比为0.95以上(优选1.00以上、更优选1.05以上、进一步优选1.10以上)。[22] The dicing die-bonding film according to any one of [17] to [21], wherein the structural unit derived from the monomer having the first functional group, the second functional group and the radiation polymerizable functional group The molar ratio of the compound is 0.95 or more (preferably 1.00 or more, more preferably 1.05 or more, further preferably 1.10 or more).

[23]根据[17]~[22]中任一项所述的切割芯片接合薄膜,其中,前述源自具有第1官能团的单体的结构单元与前述具有第2官能团及辐射线聚合性官能团的化合物的摩尔比为10.00以下(优选5.00以下、更优选3.00以下、进一步优选2.00以下、进一步优选1.50以下、特别优选1.30以下)。[23] The dicing die-bonding film according to any one of [17] to [22], wherein the structural unit derived from the monomer having the first functional group, the second functional group and the radiation polymerizable functional group The molar ratio of the compound is 10.00 or less (preferably 5.00 or less, more preferably 3.00 or less, further preferably 2.00 or less, further preferably 1.50 or less, particularly preferably 1.30 or less).

[24]根据[1]~[23]中任一项所述的切割芯片接合薄膜,其中,前述粘合剂层含有交联剂(特别是多异氰酸酯化合物)。[24] The dicing die-bonding film according to any one of [1] to [23], wherein the pressure-sensitive adhesive layer contains a crosslinking agent (especially a polyisocyanate compound).

[25]根据[24]所述的切割芯片接合薄膜,其中,前述交联剂的用量相对于基础聚合物100质量份为0.1~5质量份。[25] The dicing die-bonding film according to [24], wherein the crosslinking agent is used in an amount of 0.1 to 5 parts by mass relative to 100 parts by mass of the base polymer.

[26]根据[1]~[25]中任一项所述的切割芯片接合薄膜,其中,前述粘合剂层为固化催化剂(特别是二月桂酸二丁基锡)。[26] The dicing die-bonding film according to any one of [1] to [25], wherein the adhesive layer is a curing catalyst (particularly, dibutyltin dilaurate).

Claims (4)

1. A dicing die-bonding film comprising:
a dicing tape having a laminated structure including a substrate and an adhesive layer; and
an adhesive layer releasably adhered to the adhesive layer in the dicing tape,
in the pressure-sensitive adhesive layer, the surface of the pressure-sensitive adhesive layer on the side of adhesion has a water contact angle of 110 DEG or less and an arithmetic mean surface roughness Ra of 1.0 [ mu ] m or less.
2. The dicing die-bonding film according to claim 1, wherein the surface of the adhesive layer has a polar component value of surface free energy of 0.10 or more, which is obtained from the Kaelble Uy equation using a contact angle of water and a contact angle of diiodomethane.
3. The dicing die-bonding film according to claim 1 or 2, wherein the adhesive layer contains an acrylic polymer containing a hydrocarbon-based (meth) acrylate optionally having an alkoxy group, and a hydroxyl-containing monomer as monomer components.
4. The dicing die-bonding film according to claim 3, wherein the adhesive layer contains a polyisocyanate compound as a crosslinking agent.
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