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TWI806781B - VCSEL structure - Google Patents

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TWI806781B
TWI806781B TW111137094A TW111137094A TWI806781B TW I806781 B TWI806781 B TW I806781B TW 111137094 A TW111137094 A TW 111137094A TW 111137094 A TW111137094 A TW 111137094A TW I806781 B TWI806781 B TW I806781B
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dbr
layer
refractive index
vcsel
current aperture
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TW202322504A (en
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潘德烈
李承遠
李佳勳
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大陸商深圳市德明利光電有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

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Abstract

本發明涉及一種VCSEL結構，包括一襯底、一電極接觸層、一下DBR、一有源區、一上DBR，其中，該上DBR內的光學路徑上的堆疊結構由中Al含量的低折射率材質Al2O3由AlxGa1-xAs經氧化工藝形成Al2O3/AlyGa1-yAs組成，諧振腔光學路徑外側的導通路徑由一歐姆金屬取代Al2O3形成低電阻路徑及光局限，該堆疊結構與該歐姆金屬組成的組合層的上下兩側由AlxGa1-xAs組成並形成DBR結構中高折射率的部分，該有源區的上方設有一電流孔徑，該電流孔徑由AlzGa1-zAs組成並形成DBR結構中高折射率的部分，其中，x>z>y。 The invention relates to a VCSEL structure, comprising a substrate, an electrode contact layer, a lower DBR, an active region, and an upper DBR, wherein the stacked structure on the optical path in the upper DBR has a low refractive index with a medium Al content The material Al 2 O 3 is composed of Al x Ga 1-x As through oxidation process to form Al 2 O 3 /Aly Ga 1-y As, and the conduction path outside the optical path of the resonator is formed by an ohmic metal instead of Al 2 O 3 to form a low Resistance path and light confinement, the upper and lower sides of the combined layer composed of the stack structure and the ohmic metal are composed of Al x Ga 1-x As and form a high refractive index part in the DBR structure, and a current aperture is arranged above the active region , the current aperture is composed of Al z Ga 1-z As and forms a high refractive index part of the DBR structure, where x>z>y.

Description

VCSEL結構VCSEL structure

本發明涉及VCSEL技術領域，尤其涉及一種VCSEL結構。 The invention relates to the technical field of VCSEL, in particular to a VCSEL structure.

VCSEL的結構主要由上下DBR與有源區的MQW所形成的諧振腔所構成。在GaAs材料系統中，由於AlAs與GaAs的折射係數(refractive index)差異不大(GaAs~3.66、AlAs~3.01)，根據菲涅耳方程式，一組2p+1層DBR薄膜在垂直方向的反射率約為

Figure 111137094-A0305-02-0003-1
，其中n H 、n L 、n S 分別為DBR結構層的高、低折射係數及襯底的折射係數。明顯地，nH/nL比值越高(差值越大)則可有較高的反射率。就一特定的反射率(R)而言，只要較少的對數即可達到。而GaAs與AlAs的n H /n L 比值約只有3.66/3.01
Figure 111137094-A0305-02-0003-4
1.2，因此通常需要約30對的堆疊才能到達99%的反射率。 The structure of the VCSEL is mainly composed of a resonant cavity formed by the upper and lower DBRs and the MQW of the active region. In the GaAs material system, due to the small difference in refractive index between AlAs and GaAs (GaAs~3.66, AlAs~3.01), according to the Fresnel equation, the reflectivity of a group of 2p+1 layer DBR films in the vertical direction about
Figure 111137094-A0305-02-0003-1
, where n H , n L , and n S are the high and low refractive indices of the DBR structure layer and the refractive index of the substrate, respectively. Obviously, the higher the n H /n L ratio (the larger the difference), the higher the reflectivity can be. For a given reflectivity (R), fewer logarithms are needed to achieve it. The n H / n L ratio of GaAs and AlAs is only about 3.66/3.01
Figure 111137094-A0305-02-0003-4
1.2, so usually about 30 pairs of stacks are needed to achieve 99% reflectivity.

鑒於上述狀況，有必要提出一種可以降低堆疊數量的VCSEL結構。 In view of the above situation, it is necessary to propose a VCSEL structure that can reduce the number of stacks.

為了解決上述技術問題，本發明採用的技術方案為：一種VCSEL結構，包括一襯底、一電極接觸層、一下DBR、一有源區、一上DBR，其中，該上DBR內的光學路徑上的堆疊結構由中Al含量的低折射率材質Al2O3由AlxGa1-xAs經氧化工藝形成Al2O3/AlyGa1-yAs組成，諧振腔光學路徑外側的導通路徑由一歐姆金屬取代Al2O3形成低電阻路徑及光局限，該堆疊結構與該歐姆金屬組成的組合層的上下兩側由AlxGa1-xAs組成並形成DBR結構中高折射率的部 分，該有源區的上方設有一電流孔徑，該電流孔徑由AlzGa1-zAs組成並形成DBR結構中高折射率的部分，其中，x>z>y。 In order to solve the above-mentioned technical problems, the technical solution adopted in the present invention is: a VCSEL structure, including a substrate, an electrode contact layer, a lower DBR, an active region, and an upper DBR, wherein the optical path in the upper DBR The stack structure is composed of low refractive index material Al 2 O 3 with medium Al content, Al 2 O 3 /Aly Ga 1-y As formed by Al x Ga 1- x As through oxidation process, and the conduction path outside the optical path of the resonator Al 2 O 3 is replaced by an ohmic metal to form a low-resistance path and optical confinement. The upper and lower sides of the combined layer composed of the stack structure and the ohmic metal are composed of Al x Ga 1-x As and form the high refractive index part of the DBR structure. , a current aperture is provided above the active region, the current aperture is composed of AlzGa1 -zAs and forms a part of the high refractive index in the DBR structure, wherein, x>z>y.

進一步的，該電流孔徑的兩側由AlzGa1-zAs氧化後所形成的Al2O3組成。 Further, the two sides of the current aperture are composed of Al 2 O 3 formed after oxidation of Al z Ga 1-z As.

進一步的，所述AlzGa1-zAs為一層或多層，多層的所述AlzGa1-zAs之間以AlyGa1-yAs作為一間隔層。 Further, the Al z Ga 1-z As is one or more layers, and A y Ga 1-y As is used as a spacer layer between the multiple layers of the Al z Ga 1-z As.

進一步的，該電流孔徑的直徑小於任意一層的該堆疊結構的直徑。 Further, the diameter of the current aperture is smaller than the diameter of any layer of the stacked structure.

進一步的，該有源區從上至下依次包括一上限制層、一MQW和一下限制層。 Further, the active region includes an upper confinement layer, an MQW and a lower confinement layer sequentially from top to bottom.

進一步的，該上DBR上設有一上電極，該上電極設置在該堆疊結構外。 Further, an upper electrode is arranged on the upper DBR, and the upper electrode is arranged outside the stacked structure.

進一步的，該電極接觸層上設置有下電極。 Further, a lower electrode is arranged on the electrode contact layer.

本發明的有益效果在於：由於AlAs的能帶比較寬，因此越多對的DBR會造成較高的阻抗，限制頻寬及功率轉換效率。有別于現今主流的氧化型VCSEL，本發明採用Al2O3作為DBR的n L 材料(~1.76)，因此其n H /n L 比值可高達3.66/1.76

Figure 111137094-A0305-02-0004-5
2.08，因此可大幅減少DBR對數；同時，借由特殊的晶片結構設計將該歐姆金屬引入DBR的導通路徑中取代現有高Al%的AlGaAs，由於該歐姆金屬散熱更好、電阻更低，從而使得整體厚度也可以隨之減小，有利於小型化，即從厚度及材料兩方面降低了器件的電阻及熱阻，最終到達提高頻寬及效率的目的。 The beneficial effect of the present invention is that: since the energy band of AlAs is relatively wide, the more pairs of DBRs will cause higher impedance, which limits the bandwidth and power conversion efficiency. Different from the current mainstream oxidation VCSEL, the present invention uses Al 2 O 3 as the n L material (~1.76) of the DBR, so its n H / n L ratio can be as high as 3.66/1.76
Figure 111137094-A0305-02-0004-5
2.08, so the number of DBR pairs can be greatly reduced; at the same time, the ohmic metal is introduced into the conduction path of the DBR through a special chip structure design to replace the existing high Al% AlGaAs, because the ohmic metal has better heat dissipation and lower resistance. The overall thickness can also be reduced accordingly, which is conducive to miniaturization, that is, the resistance and thermal resistance of the device are reduced in terms of thickness and material, and finally the purpose of improving bandwidth and efficiency is achieved.

100:襯底 100: Substrate

200:電極接觸層 200: electrode contact layer

210:下電極 210: lower electrode

300:下DBR 300: Down DBR

400:有源區 400: active area

410:上限制層 410: upper limit layer

420:MQW 420:MQW

430:下限制層 430: lower limit layer

500:上DBR 500: on DBR

510:堆疊結構 510: stack structure

520:導通路徑 520: conduction path

530:電流孔徑 530: current aperture

540:上電極 540: Upper electrode

550:電流限制層 550: current limiting layer

圖1是本發明實施例一種VCSEL結構的外延結構示意圖。 FIG. 1 is a schematic diagram of an epitaxial structure of a VCSEL structure according to an embodiment of the present invention.

圖2是本發明實施例一種VCSEL結構的結構示意圖。 FIG. 2 is a schematic structural diagram of a VCSEL structure according to an embodiment of the present invention.

為了使本發明的目的、技術方案及優點更加清楚明白，以下結合附圖及實施例，對本發明一種光學路徑可控高導熱、低電阻的VCSEL製作方法及VCSEL進行進一步詳細說明。應當理解，此處所描述的具體實施例僅用以解釋本發明，並不用於限定本發明。 In order to make the purpose, technical solution and advantages of the present invention clearer, a VCSEL manufacturing method and VCSEL with controllable optical path and high thermal conductivity and low resistance of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

請參照圖1-圖2，一種VCSEL結構，包括一襯底100、一電極接觸層200、一下DBR300、一有源區400、一上DBR500，其中，該上DBR500內的光學路徑上的堆疊結構510由中Al含量的低折射率材質Al2O3由AlxGa1-xAs經氧化工藝形成Al2O3/AlyGa1-yAs組成，諧振腔光學路徑外側的導通路徑520由一歐姆金屬取代Al2O3形成低電阻路徑及光局限，該堆疊結構510與該歐姆金屬組成的組合層的上下兩側由AlxGa1-xAs組成並形成DBR結構中高折射率的部分，該有源區400的上方設有一電流孔徑530，該電流孔徑530由AlzGa1-zAs組成並形成DBR結構中高折射率的部分，其中，x>z>y。 Please refer to FIGS. 1-2 , a VCSEL structure, including a substrate 100, an electrode contact layer 200, a lower DBR300, an active region 400, and an upper DBR500, wherein the stacked structure on the optical path in the upper DBR500 510 is composed of Al 2 O 3 , a low refractive index material with medium Al content, and Al 2 O 3 /Aly Ga 1-y As formed by oxidation process of Al x Ga 1- x As. The conduction path 520 outside the optical path of the resonator is composed of An ohmic metal replaces Al 2 O 3 to form a low-resistance path and optical confinement. The upper and lower sides of the combined layer composed of the stack structure 510 and the ohmic metal are composed of Al x Ga 1-x As and form a high refractive index part in the DBR structure. , a current aperture 530 is disposed above the active region 400, and the current aperture 530 is composed of Al z Ga 1-z As and forms a high refractive index part in the DBR structure, where x>z>y.

由於AlAs的能帶比較寬，因此越多對的DBR會造成較高的阻抗，限制頻寬及功率轉換效率。有別于現今主流的氧化型VCSEL，本發明採用Al2O3作為DBR的n L 材料(~1.76)，因此其n H /n L 比值可高達3.66/1.76

Figure 111137094-A0305-02-0005-6
2.08，因此可大幅減少DBR對數；同時，借由特殊的晶片結構設計將該歐姆金屬引入DBR的導通路徑520中取代現有高Al%的AlGaAs，由於該歐姆金屬散熱更好、電阻更低，從而使得整體厚度也可以隨之減小，有利於小型化，即從厚度及材料兩方 面降低了器件的電阻及熱阻，最終到達提高頻寬及效率的目的。並且由於材料差異導致的電阻差異使得光學路徑和電流路徑分離，兩者之間的相互影響降低，降低甚至避免了壓電效應的影響。 Since the energy band of AlAs is relatively wide, the more pairs of DBRs will result in higher impedance, limiting the bandwidth and power conversion efficiency. Different from the current mainstream oxidation VCSEL, the present invention uses Al 2 O 3 as the n L material (~1.76) of the DBR, so its n H / n L ratio can be as high as 3.66/1.76
Figure 111137094-A0305-02-0005-6
2.08, so the number of DBR pairs can be greatly reduced; at the same time, the ohmic metal is introduced into the conduction path 520 of the DBR to replace the existing high Al% AlGaAs through the special chip structure design, because the ohmic metal has better heat dissipation and lower resistance, thus The overall thickness can also be reduced accordingly, which is conducive to miniaturization, that is, the resistance and thermal resistance of the device are reduced from both the thickness and the material, and finally the purpose of improving the bandwidth and efficiency is achieved. And the resistance difference caused by the material difference makes the optical path and the current path separate, the mutual influence between the two is reduced, and the influence of the piezoelectric effect is reduced or even avoided.

請參見表1，在垂直方向，依照DBR反射率計算公式R=1-

Figure 111137094-A0305-02-0006-2
計算，若將AlAs換成Al2O3，則DBR只要9對就可以得到AlAs材料29對才能達到的反射率。 Please refer to Table 1, in the vertical direction, according to the calculation formula of DBR reflectance R =1-
Figure 111137094-A0305-02-0006-2
It is calculated that if AlAs is replaced by Al 2 O 3 , only 9 pairs of DBRs can obtain the reflectivity that can only be achieved by 29 pairs of AlAs materials.

Figure 111137094-A0305-02-0006-3
Figure 111137094-A0305-02-0006-3

在另一方面，由於採用了該歐姆金屬，可以根據需要去控制該電流孔徑530以及該堆疊結構510的大小，使得諧振腔可控，即可以通過去除現有技術中該上DBR500的堆疊結構510的Al2O3，通過控制去除該堆疊結構510外的外延材料的多少，可以控制對接結構的形狀和大小，簡單的，一般可以採用化學刻蝕的方式去除。歐姆金屬可以通過原子層沉積、濺鍍、蒸鍍、電鍍等方式中的一種或任意組合來形成。 On the other hand, due to the use of the ohmic metal, the size of the current aperture 530 and the stack structure 510 can be controlled as required, so that the resonant cavity can be controlled, that is, by removing the stack structure 510 of the upper DBR 500 in the prior art For Al 2 O 3 , the shape and size of the docking structure can be controlled by controlling the amount of epitaxial material removed outside the stacked structure 510 . Simply, it can generally be removed by chemical etching. Ohmic metals can be formed by one or any combination of atomic layer deposition, sputtering, evaporation, electroplating, and the like.

特別的，Al2O3/AlyGa1-yAs堆疊結構510可以由現有的AlxGa1-xAs/AlyGa1-yAs堆疊結構510通過完全氧化形成。 In particular, the Al 2 O 3 / AlyGa 1-y As stack structure 510 can be formed from the existing Al x Ga 1-x As/ AlyGa 1-y As stack structure 510 through complete oxidation.

進一步的，該電流孔徑530的兩側由AlzGa1-zAs氧化後所形成的Al2O3組成。該電流孔徑530的兩側由AlzGa1-zAs氧化後所形成的Al2O3組成電流限制層550。 Further, the two sides of the current aperture 530 are composed of Al 2 O 3 formed after oxidation of Al z Ga 1-z As. Both sides of the current aperture 530 are composed of Al 2 O 3 formed after oxidation of Al z Ga 1-z As to form the current confinement layer 550 .

進一步的，AlzGa1-zAs為一層或多層，多層的AlzGa1-zAs之間以AlyGa1-yAs作為一間隔層，作為器件串聯電阻及光型的調整手段。 Furthermore, Al z Ga 1-z As is one or more layers, and A y Ga 1-y As is used as a spacer layer between the multi-layers of Al z Ga 1- z As to adjust the device series resistance and optical mode.

進一步的，該電流孔徑530的直徑小於任意一層的堆疊結構510的直徑。方便鐳射的通過，以及方便電流進入該電流孔徑530的兩側。 Further, the diameter of the current aperture 530 is smaller than the diameter of any layer of the stack structure 510 . It is convenient for laser to pass through, and for current to enter both sides of the current aperture 530 .

進一步的，該有源區400從上至下依次包括一上限制層410、一MQW420和一下限制層430。MQW即Multiple Quantum Well多量子阱。 Further, the active region 400 includes an upper confinement layer 410 , an MQW 420 and a lower confinement layer 430 sequentially from top to bottom. MQW stands for Multiple Quantum Well.

進一步的，該上DBR500上設有一上電極540，該上電極540設置在該堆疊結構510外。 Further, an upper electrode 540 is disposed on the upper DBR 500 , and the upper electrode 540 is disposed outside the stack structure 510 .

進一步的，該電極接觸層200上設置有下電極210。 Further, a lower electrode 210 is disposed on the electrode contact layer 200 .

一般的，作為頂發射結構的VCSEL，該上DBR500為p型DBR，該上電極540為p型電極，該下DBR300為n型DBR，下電極210為n型電極；作為底發射結構的VCSEL則相反。 Generally, as a VCSEL with a top emission structure, the upper DBR 500 is a p-type DBR, the upper electrode 540 is a p-type electrode, the lower DBR 300 is an n-type DBR, and the lower electrode 210 is an n-type electrode; for a VCSEL with a bottom emission structure, on the contrary.

並且，可以理解的，此機構中，AlxGa1-xAs是高折射率、高Al%(含Al量)材料，AlyGa1-yAs是低折射率、低Al%材料，AlzGa1-zAs是中折射率、中Al%材料，Al2O3是最低折射率，且本申請的Al2O3即氧化鋁泛指VCSEL結構中AlGaAs經氧化而得以Al2O3為主而含有少量的的Ga2O3、GaAs或AlAs的混合物。 And, it can be understood that in this mechanism, Al x Ga 1-x As is a material with high refractive index and high Al% (Al content), Aly Ga 1-y As is a material with low refractive index and low Al%, and Al z Ga 1-z As is a material with a medium refractive index and a medium Al%, and Al 2 O 3 is the lowest refractive index, and Al 2 O 3 in this application refers to Al2O3 obtained by oxidation of AlGaAs in the VCSEL structure It mainly contains a small amount of Ga 2 O 3 , GaAs or AlAs mixture.

其中摻雜有少量GaAs成分。 Which is doped with a small amount of GaAs components.

需要說明，若本發明實施例中有涉及方向性指示(諸如上、下、左、右、前、後......)，則該方向性指示僅用於解釋在某一特定姿態(如附圖所示)下各部件之間的相對位置關係、運動情況等，如果該特定姿態發生改變時，則該方向性指示也相應地隨之改變。 It should be noted that if there is a directional indication (such as up, down, left, right, front, back...) in the embodiment of the present invention, the directional indication is only used to explain the direction in a certain posture ( As shown in the accompanying drawings), if the specific posture changes, the directional indication will also change accordingly.

綜上所述，本發明提供的一種VCSEL結構，採用Al2O3作為DBR的n L 材料(~1.76)，因此其n H /n L 比值可高達3.66/1.76

Figure 111137094-A0305-02-0007-8
2.08，因此可大幅減少DBR對數；同時，借由特殊的晶片結構設計將該歐姆金屬引入DBR的導通路徑中取代現有高Al%的AlGaAs，由於歐姆金屬散熱更好、電阻更低，從而使得整 體厚度也可以隨之減小，有利於小型化，即從厚度及材料兩方面降低了器件的電阻及熱阻，最終到達提高頻寬及效率的目的。 In summary, the present invention provides a VCSEL structure that uses Al 2 O 3 as the n L material (~1.76) of the DBR, so its n H / n L ratio can be as high as 3.66/1.76
Figure 111137094-A0305-02-0007-8
2.08, so the number of DBR pairs can be greatly reduced; at the same time, the ohmic metal is introduced into the conduction path of the DBR through a special chip structure design to replace the existing AlGaAs with high Al%, because the ohmic metal has better heat dissipation and lower resistance, making the overall The thickness can also be reduced accordingly, which is conducive to miniaturization, that is, the resistance and thermal resistance of the device are reduced in terms of thickness and material, and finally the purpose of improving bandwidth and efficiency is achieved.

以上所述，僅是本發明的較佳實施例而已，並非對本發明作任何形式上的限制，雖然本發明已以較佳實施例揭露如上，然而並非用以限定本發明，任何熟悉本專業的技術人員，在不脫離本發明技術方案範圍內，當可利用上述揭示的技術內容做出些許更動或修飾為等同變化的等效實施例，但凡是未脫離本發明技術方案內容，依據本發明的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾，均仍屬於本發明技術方案的範圍內。 The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, may use the technical content disclosed above to make some changes or modify equivalent embodiments with equivalent changes, but as long as they do not depart from the content of the technical solution of the present invention, the Technical Essence Any simple modifications, equivalent changes and modifications made to the above embodiments still fall within the scope of the technical solution of the present invention.

100:襯底 100: Substrate

200:電極接觸層 200: electrode contact layer

300:下DBR 300: Down DBR

400:有源區 400: active area

410:上限制層 410: upper limit layer

420:MQW 420:MQW

430:下限制層 430: lower limit layer

500:上DBR 500: on DBR

510:堆疊結構 510: stack structure

520:導通路徑 520: conduction path

530:電流孔徑 530: current aperture

550:電流限制層 550: current limiting layer

Claims (7)

一種VCSEL結構，其特徵在於，包括：一襯底、一電極接觸層、一下DBR、一有源區、一上DBR，其中，該上DBR內的光學路徑上的堆疊結構由中Al含量的低折射率材質Al2O3由AlxGa1-xAs經氧化工藝形成Al2O3/AlyGa1-yAs組成，諧振腔光學路徑外側的導通路徑由一歐姆金屬取代Al2O3形成低電阻路徑及光局限，該堆疊結構與該歐姆金屬組成的組合層的上下兩側由AlxGa1-xAs組成並形成DBR結構中高折射率的部分，該有源區的上方設有一電流孔徑，該電流孔徑由AlzGa1-zAs組成並形成DBR結構中高折射率的部分，其中，x>z>y。 A VCSEL structure, characterized in that it includes: a substrate, an electrode contact layer, a lower DBR, an active region, and an upper DBR, wherein the stacked structure on the optical path in the upper DBR is made of a low Al content The refractive index material Al 2 O 3 is composed of Al 2 O 3 / Aly Ga 1-y As formed by oxidation process of Al x Ga 1-x As, and the conduction path outside the optical path of the resonator is replaced by an ohmic metal Al 2 O 3 Form low-resistance path and optical confinement, the upper and lower sides of the combined layer composed of the stack structure and the ohmic metal are composed of AlxGa1 -xAs and form the part of high refractive index in the DBR structure, and a The current aperture, which is composed of AlzGa1 -zAs and forms the high refractive index part of the DBR structure, where x>z>y. 如請求項1所述之VCSEL結構，其中，該電流孔徑的兩側由AlzGa1-zAs氧化後所形成的Al2O3組成。 The VCSEL structure as described in Claim 1, wherein the two sides of the current aperture are composed of Al 2 O 3 formed after oxidation of Al z Ga 1-z As. 如請求項1所述之VCSEL結構，其中，所述AlzGa1-zAs為一層或多層，多層的所述AlzGa1-zAs之間以AlyGa1-yAs作為一間隔層。 The VCSEL structure according to claim 1, wherein the Al z Ga 1-z As is one or more layers, and Aly Ga 1- y As is used as a spacer between the Al z Ga 1-z As layers layer. 如請求項1所述之VCSEL結構，其中，該電流孔徑的直徑小於任意一層的該堆疊結構的直徑。 The VCSEL structure as claimed in claim 1, wherein the diameter of the current aperture is smaller than the diameter of any layer of the stacked structure. 如請求項1所述之VCSEL結構，其中，該有源區從上至下依次包括一上限制層、一MQW和一下限制層。 The VCSEL structure according to claim 1, wherein the active region includes an upper confinement layer, an MQW and a lower confinement layer in order from top to bottom. 如請求項1所述之VCSEL結構，其中，該上DBR上設有一上電極，該上電極設置在該堆疊結構外。 The VCSEL structure according to Claim 1, wherein an upper electrode is arranged on the upper DBR, and the upper electrode is arranged outside the stacked structure. 如請求項1所述之VCSEL結構，其中，該電極接觸層上設置有下電極。 The VCSEL structure according to claim 1, wherein a lower electrode is disposed on the electrode contact layer.
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