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TWI889555B - 電特性評估方法、電特性評估裝置、電特性評估系統 - Google Patents

電特性評估方法、電特性評估裝置、電特性評估系統 Download PDF

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Publication number
TWI889555B
TWI889555B TW113136570A TW113136570A TWI889555B TW I889555 B TWI889555 B TW I889555B TW 113136570 A TW113136570 A TW 113136570A TW 113136570 A TW113136570 A TW 113136570A TW I889555 B TWI889555 B TW I889555B
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TW
Taiwan
Prior art keywords
electrical characteristics
equivalent circuit
semiconductor element
electrical
simulation
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TW113136570A
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English (en)
Chinese (zh)
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TW202514423A (zh
Inventor
司
高田哲
榊原慎
一郎
水野貴之
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日商日立全球先端科技股份有限公司
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    • H10P74/00—

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW113136570A 2023-09-29 2024-09-26 電特性評估方法、電特性評估裝置、電特性評估系統 TWI889555B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2023/035704 WO2025069400A1 (ja) 2023-09-29 2023-09-29 電気特性評価方法、電気特性評価装置、電気特性評価システム
WOPCT/JP2023/035704 2023-09-29

Publications (2)

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TW202514423A TW202514423A (zh) 2025-04-01
TWI889555B true TWI889555B (zh) 2025-07-01

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TW113136570A TWI889555B (zh) 2023-09-29 2024-09-26 電特性評估方法、電特性評估裝置、電特性評估系統

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TW (1) TWI889555B (ja)
WO (1) WO2025069400A1 (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180366326A1 (en) * 2009-06-30 2018-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TW201909448A (zh) * 2009-11-27 2019-03-01 日商半導體能源研究所股份有限公司 半導體裝置
TWI745357B (zh) * 2016-03-18 2021-11-11 日商半導體能源研究所股份有限公司 半導體裝置、半導體晶圓及電子裝置
TWI779937B (zh) * 2009-07-03 2022-10-01 日商半導體能源研究所股份有限公司 半導體裝置之製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4891036B2 (ja) * 2006-11-16 2012-03-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体検査装置
US10678978B1 (en) * 2017-09-30 2020-06-09 Cadence Design Systems, Inc. Methods, systems, and computer program product for binding and back annotating an electronic design with a schematic driven extracted view
JP7250642B2 (ja) * 2019-08-08 2023-04-03 株式会社日立ハイテク 荷電粒子線装置および荷電粒子線検査システム
JP7499864B2 (ja) * 2020-09-30 2024-06-14 株式会社日立ハイテク 検査方法
US20240151665A1 (en) * 2021-03-29 2024-05-09 Hitachi High-Tech Corporation Inspection system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180366326A1 (en) * 2009-06-30 2018-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI779937B (zh) * 2009-07-03 2022-10-01 日商半導體能源研究所股份有限公司 半導體裝置之製造方法
TW201909448A (zh) * 2009-11-27 2019-03-01 日商半導體能源研究所股份有限公司 半導體裝置
TWI745357B (zh) * 2016-03-18 2021-11-11 日商半導體能源研究所股份有限公司 半導體裝置、半導體晶圓及電子裝置

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TW202514423A (zh) 2025-04-01
WO2025069400A1 (ja) 2025-04-03

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