TWI851351B - Power supply device for reducing power consumption - Google Patents
Power supply device for reducing power consumption Download PDFInfo
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本發明係關於一種電源供應器,特別係關於一種可降低功率消耗之電源供應器。The present invention relates to a power supply, and more particularly to a power supply capable of reducing power consumption.
目前電源供應器之保護機制分為兩種,一種是栓鎖關閉(Latch-off)之設計,而另外一種為自動恢復(Auto Recovery)之設計,其中栓鎖關閉式之保護機制存在一個缺點,亦即當故障發生時,相關之控制器仍然會消耗一些電力,造成整體操作效率降低。有鑑於此,勢必要提出一種全新之解決方案,以克服先前技術所面臨之困境。Currently, there are two types of protection mechanisms for power supplies, one is a latch-off design, and the other is an auto-recovery design. The latch-off protection mechanism has a disadvantage, that is, when a fault occurs, the related controller will still consume some power, resulting in a decrease in overall operating efficiency. In view of this, it is necessary to propose a new solution to overcome the difficulties faced by previous technologies.
在較佳實施例中,本發明提出一種降低功率消耗之電源供應器,包括:一橋式整流器,根據一第一輸入電位和一第二輸入電位來產生一整流電位;一升壓電感器,接收該整流電位;一第一電容器,儲存該整流電位;一第一功率切換器,根據一第一脈波寬度調變電位來選擇性地將該升壓電感器耦接至一接地電位;一第一輸出級電路,耦接至該升壓電感器,並產生一中間電位;一變壓器,包括一主線圈和一副線圈,其中該主線圈係用於接收該中間電位;一第二功率切換器,根據一第二脈波寬度調變電位來選擇性地將該主線圈耦接至該接地電位;一第二輸出級電路,耦接至該副線圈,並產生一輸出電位;以及一偵測及控制電路,包括一第一脈波寬度調變積體電路和一第二脈波寬度調變積體電路,其中該第一脈波寬度調變積體電路係用於產生該第一脈波寬度調變電位,而該第二脈波寬度調變積體電路係用於產生該第二脈波寬度調變電位;其中在一保護機制被觸發之後,該偵測及控制電路將關閉該第一脈波寬度調變積體電路和該第二脈波寬度調變積體電路。In a preferred embodiment, the present invention provides a power supply for reducing power consumption, comprising: a bridge rectifier, generating a rectified potential according to a first input potential and a second input potential; a boost inductor, receiving the rectified potential; a first capacitor, storing the rectified potential; a first power switch, selectively coupling the boost inductor to a ground potential according to a first pulse width modulation potential; a first output stage circuit, coupled to the boost inductor and generating an intermediate potential; a transformer, comprising a main coil and a secondary coil, wherein the main coil is used to receive the intermediate potential; a second ... A second pulse width modulation potential is used to selectively couple the main coil to the ground potential; a second output stage circuit is coupled to the secondary coil and generates an output potential; and a detection and control circuit includes a first pulse width modulation integrated circuit and a second pulse width modulation integrated circuit, wherein the first pulse width modulation integrated circuit The variable integrated circuit is used to generate the first pulse width modulation potential, and the second pulse width modulation integrated circuit is used to generate the second pulse width modulation potential; after a protection mechanism is triggered, the detection and control circuit will turn off the first pulse width modulation integrated circuit and the second pulse width modulation integrated circuit.
為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。In order to make the purpose, features and advantages of the present invention more clearly understood, specific embodiments of the present invention are specifically listed below and described in detail with reference to the accompanying drawings.
在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。Certain terms are used in the specification and patent application to refer to specific components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. This specification and patent application do not use differences in names as a way to distinguish components, but use differences in the functions of components as the criterion for distinction. The words "include" and "including" mentioned throughout the specification and patent application are open terms and should be interpreted as "including but not limited to". The word "substantially" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and achieve the basic technical effect. In addition, the word "coupled" in this specification includes any direct and indirect electrical connection means. Therefore, if a first device is described herein as being coupled to a second device, it means that the first device may be directly electrically connected to the second device, or may be indirectly electrically connected to the second device via other devices or connection means.
第1圖係顯示根據本發明一實施例所述之電源供應器100之示意圖。例如,電源供應器100可應用於桌上型電腦、筆記型電腦,或一體成形電腦。如第1圖所示,電源供應器100包括:一橋式整流器110、一升壓電感器LU、一第一電容器C1、一第一功率切換器120、一第一輸出級電路130、一變壓器140、一第二功率切換器150、一第二輸出級電路160,以及一偵測及控制電路170。必須注意的是,雖然未顯示於第1圖中,但電源供應器100更可包括其他元件,例如:一穩壓器或(且)一負回授電路。FIG. 1 is a schematic diagram showing a
橋式整流器110可根據一第一輸入電位VIN1和一第二輸入電位VIN2來產生一整流電位VR,其中第一輸入電位VIN1和第二輸入電位VIN2之間可形成具有任意頻率和任意振幅之一交流電壓。例如,交流電壓之頻率可約為50Hz或60Hz,而交流電壓之方均根值可約由90V至264V,但亦不僅限於此。升壓電感器LU可接收整流電位VR。第一電容器C1可儲存整流電位VR。第一功率切換器120可根據一第一脈波寬度調變電位VM1來選擇性地將升壓電感器LU耦接至一接地電位VSS(例如:0V)。例如,若第一脈波寬度調變電位VM1為高邏輯位準(亦即,邏輯「1」),則第一功率切換器120可將升壓電感器LU耦接至接地電位VSS(亦即,第一功率切換器120可近似於一短路路徑);反之,若第一脈波寬度調變電位VM1為低邏輯位準(亦即,邏輯「0」),則第一功率切換器120不會將升壓電感器LU耦接至接地電位VSS(亦即,第一功率切換器120可近似於一開路路徑)。第一輸出級電路130係耦接至升壓電感器LU,其中第一輸出級電路130可用於產生一中間電位VE。在一些實施例中,橋式整流器110、升壓電感器LU、第一電容器C1、第一功率切換器120,以及第一輸出級電路130可共同形成電源供應器100之一前級電路結構。The
變壓器140包括一主線圈141和一副線圈142,其中主線圈141可用於接收中間電位VE。例如,主線圈141可位於變壓器140之一側,而副線圈142則可位於變壓器140之相對另一側。第二功率切換器150可根據一第二脈波寬度調變電位VM2來選擇性地將主線圈141耦接至接地電位VSS。例如,若第二脈波寬度調變電位VM2為高邏輯位準,則第二功率切換器150可將主線圈141耦接至接地電位VSS(亦即,第二功率切換器150可近似於一短路路徑);反之,若第二脈波寬度調變電位VM2為低邏輯位準,則第二功率切換器150不會將主線圈141耦接至接地電位VSS(亦即,第二功率切換器150可近似於一開路路徑)。第二輸出級電路160係耦接至副線圈142,其中第二輸出級電路160可用於產生一輸出電位VOUT。例如,輸出電位VOUT可為一直流電位,其電位位準可由18V至22V,但亦不僅限於此。在一些實施例中,變壓器140、第二功率切換器150,以及第二輸出級電路160可共同形成電源供應器100之一後級電路結構。The
偵測及控制電路170包括一第一脈波寬度調變積體電路(Pulse Width Modulation Integrated Circuit,PWM IC)172和一第二脈波寬度調變積體電路174,其中第一脈波寬度調變積體電路172可用於產生第一脈波寬度調變電位VM1以控制電源供應器100之前級電路結構,而第二脈波寬度調變積體電路174則可用於產生第二脈波寬度調變電位VM2以控制電源供應器100之後級電路結構。在一保護機制被觸發之後,偵測及控制電路170將會關閉第一脈波寬度調變積體電路172和第二脈波寬度調變積體電路174,從而可有效降低電源供應器100之整體功率消耗。例如,前述之保護機制可指一過電壓保護、一過電流保護、一短路電流保護,或是一過溫度保護,但亦不僅限於此。The detection and
以下實施例將介紹電源供應器100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。The following embodiments will introduce the detailed structure and operation of the
第2圖係顯示根據本發明一實施例所述之電源供應器200之電路圖。在第2圖之實施例中,電源供應器200具有一第一輸入節點NIN1、一第二輸入節點NIN2,以及一輸出節點NOUT,並包括:一橋式整流器210、一升壓電感器LU、一第一電容器C1、一第一功率切換器220、一第一輸出級電路230、一變壓器240、一第二功率切換器250、一第二輸出級電路260,以及一偵測及控制電路270。電源供應器200之第一輸入節點NIN1和第二輸入節點NIN2可用於由一外部輸入電源(未顯示)處分別接收一第一輸入電位VIN1和一第二輸入電位VIN2。電源供應器200之輸出節點NOUT則可用於輸出一輸出電位VOUT至一系統端(未顯示)。FIG. 2 is a circuit diagram of a
橋式整流器210包括一第一二極體D1、一第二二極體D2、一第三二極體D3,以及一第四二極體D4。第一二極體D1具有一陽極和一陰極,其中第一二極體D1之陽極係耦接至第一輸入節點NIN1,而第一二極體D1之陰極係耦接至一第一節點N1以輸出一整流電位VR。第二二極體D2具有一陽極和一陰極,其中第二二極體D2之陽極係耦接至第二輸入節點NIN2,而第二二極體D2之陰極係耦接至第一節點N1。第三二極體D3具有一陽極和一陰極,其中第三二極體D3之陽極係耦接至一接地電位VSS,而第三二極體D3之陰極係耦接至第一輸入節點NIN1。第四二極體D4具有一陽極和一陰極,其中第四二極體D4之陽極係耦接至接地電位VSS,而第四二極體D4之陰極係耦接至第二輸入節點NIN2。The
升壓電感器LU具有一第一端和一第二端,其中升壓電感器LU之第一端係耦接至第一節點N1以接收整流電位VR,而升壓電感器LU之第二端係耦接至一第二節點N2。The boost inductor LU has a first terminal and a second terminal, wherein the first terminal of the boost inductor LU is coupled to the first node N1 to receive the rectified potential VR, and the second terminal of the boost inductor LU is coupled to a second node N2.
第一電容器C1具有一第一端和一第二端,其中第一電容器C1之第一端係耦接至第一節點N1以接收整流電位VR,而第一電容器C1之第二端係耦接至接地電位VSS。The first capacitor C1 has a first terminal and a second terminal, wherein the first terminal of the first capacitor C1 is coupled to the first node N1 to receive the rectified potential VR, and the second terminal of the first capacitor C1 is coupled to the ground potential VSS.
第一功率切換器220包括一第一電晶體M1。例如,第一電晶體M1可為一N型金氧半場效電晶體(N-type Metal-Oxide-Semiconductor Field-Effect Transistor,NMOSFET)。第一電晶體M1具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第一電晶體M1之控制端係用於接收一第一脈波寬度調變電位VM1,第一電晶體M1之第一端係耦接至接地電位VSS,而第一電晶體M1之第二端係耦接至第二節點N2。The
第一輸出級電路230包括一第五二極體D5和一第二電容器C2。第五二極體D5具有一陽極和一陰極,其中第五二極體D5之陽極係耦接至第二節點N2,而第五二極體D5之陰極係耦接至一第三節點N3以輸出一中間電位VE。第二電容器C2具有一第一端和一第二端,其中第二電容器C2之第一端係耦接至第三節點N3,而第二電容器C2之第二端係耦接至接地電位VSS。The first
變壓器240包括一主線圈241和一副線圈242,其中變壓器240更可內建一激磁電感器LM。激磁電感器LM可為變壓器240製造時所附帶產生之一固有元件,其並非一外部獨立元件。主線圈241和激磁電感器LM皆可位於變壓器240之同一側(例如:一次側),而副線圈242則可位於變壓器240之相對另一側(例如:二次側,其可與一次側互相隔離開來)。主線圈241具有一第一端和一第二端,其中主線圈241之第一端係耦接至第三節點N3以接收中間電位VE,而主線圈241之第二端係耦接至一第四節點N4。激磁電感器LM具有一第一端和一第二端,其中激磁電感器LM之第一端係耦接至第三節點N3,而激磁電感器LM之第二端係耦接至第四節點N4。副線圈242具有一第一端和一第二端,其中副線圈242之第一端係耦接至一第五節點N5,而副線圈242之第二端係耦接至一共同節點NCM。例如,共同節點NCM可視為另一接地電位,其可與前述之接地電位VSS相同或相異。在一些實施例中,接地電位VSS可作為變壓器240之一次側接地點,而共同節點NCM則可作為變壓器240之二次側接地點,但亦不僅限於此。The
第二功率切換器250包括一第二電晶體M2。例如,第二電晶體M2可為另一N型金氧半場效電晶體。第二電晶體M2具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第二電晶體M2之控制端係用於接收一第二脈波寬度調變電位VM2,第二電晶體M2之第一端係耦接至接地電位VSS,而第二電晶體M2之第二端係耦接至第四節點N4。The
第二輸出級電路260包括一第六二極體D6和一第三電容器C3。第六二極體D6具有一陽極和一陰極,其中第六二極體D6之陽極係耦接至第五節點N5,而第六二極體D6之陰極係耦接至輸出節點NOUT。第三電容器C3具有一第一端和一第二端,其中第三電容器C3之第一端係耦接至輸出節點NOUT,而第三電容器C3之第二端係耦接至共同節點NCM。The second output stage circuit 260 includes a sixth diode D6 and a third capacitor C3. The sixth diode D6 has an anode and a cathode, wherein the anode of the sixth diode D6 is coupled to the fifth node N5, and the cathode of the sixth diode D6 is coupled to the output node NOUT. The third capacitor C3 has a first terminal and a second terminal, wherein the first terminal of the third capacitor C3 is coupled to the output node NOUT, and the second terminal of the third capacitor C3 is coupled to the common node NCM.
偵測及控制電路270包括一第一脈波寬度調變積體電路272、一第二脈波寬度調變積體電路274、一計時電路276、一第三電晶體M3、一第四電晶體M4,以及一電阻器R。例如,第三電晶體M3和第四電晶體M4可各自為一N型金氧半場效電晶體。The detection and
電阻器R可具有相對較大之電阻值(例如,其可大於或等於500KΩ)。電阻器R具有一第一端和一第二端,其中電阻器R之第一端係耦接至第一節點N1,而電阻器R之第二端係耦接至一偵測節點ND以輸出一偵測電位VD。第三電晶體M3具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第三電晶體M3之控制端係用於接收一第一控制電位VC1,第三電晶體M3之第一端係耦接至一內部節點NN,而第三電晶體M3之第二端係耦接至偵測節點ND。第四電晶體M4具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第四電晶體M4之控制端係用於接收一第二控制電位VC2,第四電晶體M4之第一端係耦接至接地電位VSS,而第四電晶體M4之第二端係耦接至內部節點NN。The resistor R may have a relatively large resistance value (for example, it may be greater than or equal to 500KΩ). The resistor R has a first end and a second end, wherein the first end of the resistor R is coupled to the first node N1, and the second end of the resistor R is coupled to a detection node ND to output a detection potential VD. The third transistor M3 has a control end (for example, a gate), a first end (for example, a source), and a second end (for example, a drain), wherein the control end of the third transistor M3 is used to receive a first control potential VC1, the first end of the third transistor M3 is coupled to an internal node NN, and the second end of the third transistor M3 is coupled to the detection node ND. The fourth transistor M4 has a control end (e.g., a gate), a first end (e.g., a source), and a second end (e.g., a drain), wherein the control end of the fourth transistor M4 is used to receive a second control potential VC2, the first end of the fourth transistor M4 is coupled to the ground potential VSS, and the second end of the fourth transistor M4 is coupled to the internal node NN.
第3圖係顯示根據本發明一實施例所述之電源供應器200之信號波形圖,其中橫軸代表時間(s),而縱軸代表各個信號之電位位準(V)。請一併參考第2、3圖以理解電源供應器200之操作原理。FIG. 3 shows a signal waveform diagram of the
初始時(亦即,在一第一時間點T1之前),電源供應器200係正常運作。此時,偵測電位VD可維持於高邏輯位準,第一脈波寬度調變積體電路272可持續地輸出第一脈波寬度調變電位VM1,而第二脈波寬度調變積體電路274則可持續地輸出第二脈波寬度調變電位VM2。Initially (i.e., before a first time point T1), the
在第一時間點T1處,第二脈波寬度調變積體電路274判斷出有任何一種保護機制已被觸發。例如,第二脈波寬度調變積體電路274可藉由監控電源供應器200之操作狀態來判斷前述之保護機制是否被觸發;抑或,第二脈波寬度調變積體電路274可根據電源供應器200之一內部電位(未顯示)來判斷前述之保護機制是否被觸發,但亦不僅限於此。At the first time point T1, the second PWM integrated
當前述之保護機制被觸發時,第二脈波寬度調變積體電路274即停止輸出第二脈波寬度調變電位VM2並產生具有高邏輯位準之第二控制電位VC2,再傳送一溝通電位VT至第一脈波寬度調變積體電路272。回應於溝通電位VT,第一脈波寬度調變積體電路272即停止輸出第一脈波寬度調變電位VM1並產生具有高邏輯位準之第一控制電位VC1。此時,偵測節點ND處之偵測電位VD會被致能之第三電晶體M3和致能之第四電晶體M4幾乎下拉至接地電位VSS之位準。When the aforementioned protection mechanism is triggered, the second pulse width modulation integrated
計時電路276可持續地監控偵測節點ND處之偵測電位VD。當發現到偵測電位VD大致等於接地電位VSS時,計時電路276即開始計算一第一延遲時間TD1。當第一延遲時間TD1屆滿時(亦即,在一第二時間點T2處),計時電路276即傳送具有高邏輯位準之一通知電位VN至第一脈波寬度調變積體電路272。The
在第二時間點T2處,回應於具有高邏輯位準之通知電位VN,第一脈波寬度調變積體電路272即開始計算一第二延遲時間TD2。當第二延遲時間TD2屆滿時(亦即,在一第三時間點T3處),第一脈波寬度調變積體電路272即被關閉,使得第二脈波寬度調變積體電路274亦會隨之被關閉。由於第一脈波寬度調變積體電路272和第二脈波寬度調變積體電路274皆被關閉,故電源供應器200之整體功率消耗幾乎可下降至0。換言之,基於已經觸發之保護機制,電源供應器200將可維持於一關閉狀態,直到其外部輸入電源再被重置為止。At the second time point T2, in response to the notification potential VN having a high logic level, the
在一些實施例中,第一延遲時間TD1可介於100μs至260μs之間,而第二延遲時間TD2可介於100μs至150μs之間。前述之時間範圍係根據多次實驗結果而得出,其可避免電源供應器200之內部元件意外損壞,亦有助於降低保護機制被誤判觸發之機率。In some embodiments, the first delay time TD1 may be between 100 μs and 260 μs, and the second delay time TD2 may be between 100 μs and 150 μs. The aforementioned time range is obtained based on multiple experimental results, which can avoid accidental damage to the internal components of the
本發明提出一種新穎之電源供應器。根據實際量測結果,使用前述設計之電源供應器可在任一保護機制被觸發後快速地關閉對應之脈波寬度調變積體電路以降低功率消耗,故其很適合應用於各種各式之裝置當中。The present invention proposes a novel power supply. According to actual measurement results, the power supply using the above design can quickly shut down the corresponding pulse width modulation integrated circuit after any protection mechanism is triggered to reduce power consumption, so it is very suitable for application in various types of devices.
值得注意的是,以上所述之電位、電流、電阻值、電感值、電容值,以及其餘元件參數均非為本發明之限制條件。設計者可以根據不同需要調整這些設定值。本發明之電源供應器並不僅限於第1-3圖所圖示之狀態。本發明可以僅包括第1-3圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之電源供應器當中。雖然本發明之實施例係使用金氧半場效電晶體為例,但本發明並不僅限於此,本技術領域人士可改用其他種類之電晶體,例如:接面場效電晶體,或是鰭式場效電晶體等等,而不致於影響本發明之效果。It is worth noting that the potential, current, resistance, inductance, capacitance, and other component parameters described above are not limiting conditions of the present invention. Designers can adjust these settings according to different needs. The power supply of the present invention is not limited to the states shown in Figures 1-3. The present invention may only include any one or more features of any one or more embodiments of Figures 1-3. In other words, not all of the features shown in the diagrams need to be implemented in the power supply of the present invention at the same time. Although the embodiments of the present invention use metal oxide semi-conductor field effect transistors as an example, the present invention is not limited to this. People in the technical field can use other types of transistors, such as junction field effect transistors, or fin field effect transistors, etc., without affecting the effects of the present invention.
在本說明書以及申請專利範圍中的序數,例如「第一」、「第二」、「第三」等等,彼此之間並沒有順序上的先後關係,其僅用於標示區分兩個具有相同名字之不同元件。Ordinal numbers in this specification and the scope of the patent application, such as "first", "second", "third", etc., have no sequential relationship with each other, and are only used to mark and distinguish two different components with the same name.
本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention is disclosed as above with the preferred embodiments, it is not intended to limit the scope of the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the attached patent application.
100,200:電源供應器 110,210:橋式整流器 120,220:第一功率切換器 130,230:第一輸出級電路 140,240:變壓器 141,241:主線圈 142,242:副線圈 150,250:第二功率切換器 160,260:第二輸出級電路 170,270:偵測及控制電路 172,272:第一脈波寬度調變積體電路 174,274:第二脈波寬度調變積體電路 276:計時電路 C1:第一電容器 C2:第二電容器 C3:第三電容器 D1:第一二極體 D2:第二二極體 D3:第三二極體 D4:第四二極體 D5:第五二極體 D6:第六二極體 LM:激磁電感器 LU:升壓電感器 M1:第一電晶體 M2:第二電晶體 M3:第三電晶體 M4:第四電晶體 N1:第一節點 N2:第二節點 N3:第三節點 N4:第四節點 N5:第五節點 NCM:共同節點 ND:偵測節點 NIN1:第一輸入節點 NIN2:第二輸入節點 NN:內部節點 NOUT:輸出節點 R:電阻器 T1:第一時間點 T2:第二時間點 T3:第三時間點 TD1:第一延遲時間 TD2:第二延遲時間 VC1:第一控制電位 VC2:第二控制電位 VD:偵測電位 VE:中間電位 VIN1:第一輸入電位 VIN2:第二輸入電位 VM1:第一脈波寬度調變電位 VM2:第二脈波寬度調變電位 VN:通知電位 VOUT:輸出電位 VR:整流電位 VSS:接地電位 VT:溝通電位 100,200: Power supply 110,210: Bridge rectifier 120,220: First power switch 130,230: First output stage circuit 140,240: Transformer 141,241: Main coil 142,242: Secondary coil 150,250: Second power switch 160,260: Second output stage circuit 170,270: Detection and control circuit 172,272: First pulse width modulation integrated circuit 174,274: Second pulse width modulation integrated circuit 276: Timing circuit C1: First capacitor C2: Second capacitor C3: Third capacitor D1: first diode D2: second diode D3: third diode D4: fourth diode D5: fifth diode D6: sixth diode LM: excitation inductor LU: boost inductor M1: first transistor M2: second transistor M3: third transistor M4: fourth transistor N1: first node N2: second node N3: third node N4: fourth node N5: fifth node NCM: common node ND: detection node NIN1: first input node NIN2: second input node NN: internal node NOUT: output node R: resistor T1: first time point T2: second time point T3: third time point TD1: first delay time TD2: Second delay time VC1: First control potential VC2: Second control potential VD: Detection potential VE: Intermediate potential VIN1: First input potential VIN2: Second input potential VM1: First pulse width modulation potential VM2: Second pulse width modulation potential VN: Notification potential VOUT: Output potential VR: Rectification potential VSS: Ground potential VT: Communication potential
第1圖係顯示根據本發明一實施例所述之電源供應器之示意圖。 第2圖係顯示根據本發明一實施例所述之電源供應器之電路圖。 第3圖係顯示根據本發明一實施例所述之電源供應器之信號波形圖。 FIG. 1 is a schematic diagram showing a power supply according to an embodiment of the present invention. FIG. 2 is a circuit diagram showing a power supply according to an embodiment of the present invention. FIG. 3 is a signal waveform diagram showing a power supply according to an embodiment of the present invention.
100:電源供應器 100: Power supply
110:橋式整流器 110: Bridge rectifier
120:第一功率切換器 120: First power switch
130:第一輸出級電路 130: First output stage circuit
140:變壓器 140: Transformer
141:主線圈 141: Main coil
142:副線圈 142: Secondary coil
150:第二功率切換器 150: Second power switch
160:第二輸出級電路 160: Second output stage circuit
170:偵測及控制電路 170: Detection and control circuit
172:第一脈波寬度調變積體電路 172: The first pulse width modulation integrated circuit
174:第二脈波寬度調變積體電路 174: The second pulse width modulation integrated circuit
C1:第一電容器 C1: First capacitor
LU:升壓電感器 LU: Boost Inductor
VE:中間電位 VE: Middle potential
VIN1:第一輸入電位 VIN1: first input potential
VIN2:第二輸入電位 VIN2: Second input potential
VM1:第一脈波寬度調變電位 VM1: First pulse width modulation potential
VM2:第二脈波寬度調變電位 VM2: Second pulse width modulation potential
VOUT:輸出電位 VOUT: output voltage
VR:整流電位 VR: Rectification potential
VSS:接地電位 VSS: ground potential
Claims (9)
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