TWI886000B - Power supply device with high output stability - Google Patents
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本發明係關於一種電源供應器,特別係關於一種高輸出穩定度之電源供應器。The present invention relates to a power supply, and more particularly to a power supply with high output stability.
電源供應器為筆記型電腦領域中不可或缺之元件。然而,若電源供應器之輸出穩定度不足,則很容易造成相關筆記型電腦之整體操作性能下滑。有鑑於此,勢必要提出一種全新之解決方案,以克服先前技術所面臨之困境。Power supplies are indispensable components in the field of laptop computers. However, if the output stability of the power supply is insufficient, it is easy to cause the overall operating performance of the related laptop to decline. In view of this, it is necessary to propose a new solution to overcome the difficulties faced by previous technologies.
在較佳實施例中,本發明提出一種高輸出穩定度之電源供應器,包括:一橋式整流器,根據一第一輸入電位和一第二輸入電位來產生一整流電位;一升壓電感器,接收該整流電位;一功率切換器,根據一第一驅動電位來選擇性地將該升壓電感器耦接至一接地電位;一第一輸出級電路,耦接至該升壓電感器,其中該第一輸出級電路係根據一控制電位來決定是否要產生一中間電位;一切換電路,根據該中間電位、一第二驅動電位,以及一第三驅動電位來產生一切換電位;一變壓器,包括一主線圈、一第一副線圈,以及一第二副線圈,其中該變壓器內建一漏電感器和一激磁電感器,而該主線圈係經由該漏電感器接收該切換電位;一諧振電容器,耦接至該激磁電感器;一感測電阻器,耦接至該諧振電容器;一第二輸出級電路,耦接至該第一副線圈和該第二副線圈,並產生一輸出電位;以及一偵測及控制電路,偵測跨越該感測電阻器之一第一峰值電位差和一第二峰值電位差,其中該偵測及控制電路更根據該第一峰值電位差和該第二峰值電位差來產生該控制電位、該第一驅動電位、該第二驅動電位,以及該第三驅動電位。In a preferred embodiment, the present invention provides a power supply with high output stability, including: a bridge rectifier, generating a rectified potential according to a first input potential and a second input potential; a boost inductor, receiving the rectified potential; a power switch, selectively coupling the boost inductor to a ground potential according to a first drive potential; a first output stage circuit, coupled to the boost inductor, wherein the first output stage circuit determines whether to generate an intermediate potential according to a control potential; a switching circuit, generating all switching potentials according to the intermediate potential, a second drive potential, and a third drive potential; a transformer, including a main coil, a first secondary coil, and a grounding circuit. , and a second secondary coil, wherein the transformer has a leakage inductor and an exciting inductor built in, and the main coil receives the switching potential via the leakage inductor; a resonant capacitor coupled to the exciting inductor; a sensing resistor coupled to the resonant capacitor; a second output stage circuit coupled to the first secondary coil and the second secondary coil and generating an output potential; and a detection and control circuit detecting a first peak potential difference and a second peak potential difference across the sensing resistor, wherein the detection and control circuit further generates the control potential, the first driving potential, the second driving potential, and the third driving potential according to the first peak potential difference and the second peak potential difference.
在一些實施例中,該橋式整流器包括:一第一二極體,具有一陽極和一陰極,其中該第一二極體之該陽極係耦接至一第一輸入節點以接收該第一輸入電位,而該第一二極體之該陰極係耦接至一第一節點以輸出該整流電位;一第二二極體,具有一陽極和一陰極,其中該第二二極體之該陽極係耦接至一第二輸入節點以接收該第二輸入電位,而該第二二極體之該陰極係耦接至該第一節點;一第三二極體,具有一陽極和一陰極,其中該第三二極體之該陽極係耦接至該接地電位,而該第三二極體之該陰極係耦接至該第一輸入節點;以及一第四二極體,具有一陽極和一陰極,其中該第四二極體之該陽極係耦接至該接地電位,而該第四二極體之該陰極係耦接至該第二輸入節點;其中該升壓電感器具有一第一端和一第二端,該升壓電感器之該第一端係耦接至該第一節點以接收該整流電位,而該升壓電感器之該第二端係耦接至一第二節點。In some embodiments, the bridge rectifier includes: a first diode having an anode and a cathode, wherein the anode of the first diode is coupled to a first input node to receive the first input potential, and the cathode of the first diode is coupled to a first node to output the rectified potential; a second diode having an anode and a cathode, wherein the anode of the second diode is coupled to a second input node to receive the second input potential, and the cathode of the second diode is coupled to the first node; a third diode having an anode and a cathode. cathode, wherein the anode of the third diode is coupled to the ground potential, and the cathode of the third diode is coupled to the first input node; and a fourth diode having an anode and a cathode, wherein the anode of the fourth diode is coupled to the ground potential, and the cathode of the fourth diode is coupled to the second input node; wherein the boost inductor has a first end and a second end, the first end of the boost inductor is coupled to the first node to receive the rectified potential, and the second end of the boost inductor is coupled to a second node.
在一些實施例中,該功率切換器包括:一第一電晶體,具有一控制端、一第一端,以及一第二端,其中該第一電晶體之該控制端係用於接收該第一驅動電位,該第一電晶體之該第一端係耦接至該接地電位,而該第一電晶體之該第二端係耦接至該第二節點。In some embodiments, the power switch includes: a first transistor having a control end, a first end, and a second end, wherein the control end of the first transistor is used to receive the first driving potential, the first end of the first transistor is coupled to the ground potential, and the second end of the first transistor is coupled to the second node.
在一些實施例中,該第一輸出級電路包括:一第五二極體,具有一陽極和一陰極,其中該第五二極體之該陽極係耦接至該第二節點,而該第五二極體之該陰極係耦接至一第三節點;一第一電容器,具有一第一端和一第二端,其中該第一電容器之該第一端係耦接至該第三節點,而該第一電容器之該第二端係耦接至該接地電位;以及一第二電晶體,具有一控制端、一第一端,以及一第二端,其中該第二電晶體之該控制端係用於接收該控制電位,該第二電晶體之該第一端係耦接至一第四節點以選擇性地輸出該中間電位,而該第二電晶體之該第二端係耦接至該第三節點。In some embodiments, the first output stage circuit includes: a fifth diode having an anode and a cathode, wherein the anode of the fifth diode is coupled to the second node, and the cathode of the fifth diode is coupled to a third node; a first capacitor having a first end and a second end, wherein the first end of the first capacitor is coupled to the third node, and the second end of the first capacitor is coupled to the ground potential; and a second transistor having a control end, a first end, and a second end, wherein the control end of the second transistor is used to receive the control potential, the first end of the second transistor is coupled to a fourth node to selectively output the intermediate potential, and the second end of the second transistor is coupled to the third node.
在一些實施例中,該切換電路包括:一第三電晶體,具有一控制端、一第一端,以及一第二端,其中該第三電晶體之該控制端係用於接收該第二驅動電位,該第三電晶體之該第一端係耦接至一第五節點以輸出該切換電位,而該第三電晶體之該第二端係耦接至該第四節點以接收該中間電位;以及一第四電晶體,具有一控制端、一第一端,以及一第二端,其中該第四電晶體之該控制端係用於接收該第三驅動電位,該第四電晶體之該第一端係耦接至該接地電位,而該第四電晶體之該第二端係耦接至該第五節點。In some embodiments, the switching circuit includes: a third transistor having a control end, a first end, and a second end, wherein the control end of the third transistor is used to receive the second driving potential, the first end of the third transistor is coupled to a fifth node to output the switching potential, and the second end of the third transistor is coupled to the fourth node to receive the intermediate potential; and a fourth transistor having a control end, a first end, and a second end, wherein the control end of the fourth transistor is used to receive the third driving potential, the first end of the fourth transistor is coupled to the ground potential, and the second end of the fourth transistor is coupled to the fifth node.
在一些實施例中,該漏電感器具有一第一端和一第二端,該漏電感器之該第一端係耦接至該第五節點以接收該切換電位,該漏電感器之該第二端係耦接至一第六節點,該主線圈具有一第一端和一第二端,該主線圈之該第一端係耦接至該第六節點,該主線圈之該第二端係耦接至一第七節點,該激磁電感器具有一第一端和一第二端,該激磁電感器之該第一端係耦接至該第六節點,該激磁電感器之該第二端係耦接至該第七節點,該諧振電容器具有一第一端和一第二端,該諧振電容器之該第一端係耦接至該第七節點,該諧振電容器之該第二端係耦接至一第八節點,該感測電阻器具有一第一端和一第二端,該感測電阻器之該第一端係耦接至該第八節點,該感測電阻器之該第二端係耦接至該接地電位,該第一副線圈具有一第一端和一第二端,該第一副線圈之該第一端係耦接至一第九節點,該第一副線圈之該第二端係耦接至一共同節點,該第二副線圈具有一第一端和一第二端,該第二副線圈之該第一端係耦接至該共同節點,而該第二副線圈之該第二端係耦接至一第十節點。In some embodiments, the leakage inductor has a first end and a second end, the first end of the leakage inductor is coupled to the fifth node to receive the switching potential, the second end of the leakage inductor is coupled to a sixth node, the main coil has a first end and a second end, the first end of the main coil is coupled to the sixth node, the second end of the main coil is coupled to a seventh node, the excitation inductor has a first end and a second end, the first end of the excitation inductor is coupled to the sixth node, the second end of the excitation inductor is coupled to the seventh node, the resonant capacitor has a first end and a second end, the first end of the resonant capacitor is coupled to the sixth node, and the second end of the resonant capacitor is coupled to the seventh node. One end is coupled to the seventh node, the second end of the resonant capacitor is coupled to an eighth node, the sensing resistor has a first end and a second end, the first end of the sensing resistor is coupled to the eighth node, the second end of the sensing resistor is coupled to the ground potential, the first secondary coil has a first end and a second end, the first end of the first secondary coil is coupled to a ninth node, the second end of the first secondary coil is coupled to a common node, the second secondary coil has a first end and a second end, the first end of the second secondary coil is coupled to the common node, and the second end of the second secondary coil is coupled to a tenth node.
在一些實施例中,該第二輸出級電路包括:一第六二極體,具有一陽極和一陰極,其中該第六二極體之該陽極係耦接至該第九節點,而該第六二極體之該陰極係耦接至一輸出節點以輸出該輸出電位;一第七二極體,具有一陽極和一陰極,其中該第七二極體之該陽極係耦接至該第十節點,而該第七二極體之該陰極係耦接至該輸出節點;以及一第二電容器,具有一第一端和一第二端,其中該第二電容器之該第一端係耦接至該輸出節點,而該第二電容器之該第二端係耦接至該共同節點。In some embodiments, the second output stage circuit includes: a sixth diode having an anode and a cathode, wherein the anode of the sixth diode is coupled to the ninth node, and the cathode of the sixth diode is coupled to an output node to output the output potential; a seventh diode having an anode and a cathode, wherein the anode of the seventh diode is coupled to the tenth node, and the cathode of the seventh diode is coupled to the output node; and a second capacitor having a first end and a second end, wherein the first end of the second capacitor is coupled to the output node, and the second end of the second capacitor is coupled to the common node.
在一些實施例中,該偵測及控制電路包括:一第一及閘,具有一第一輸入端、一第二輸入端,以及一輸出端,其中該第一及閘之該第一輸入端係用於接收該第二驅動電位,該第一及閘之該第二輸入端係用於接收該輸出電位,而該第一及閘之該輸出端係用於輸出一第一邏輯電位;以及一第二及閘,具有一第一輸入端、一第二輸入端,以及一輸出端,其中該第二及閘之該第一輸入端係用於接收該第三驅動電位,該第二及閘之該第二輸入端係用於接收該輸出電位,而該第二及閘之該輸出端係用於輸出一第二邏輯電位。In some embodiments, the detection and control circuit includes: a first AND gate having a first input terminal, a second input terminal, and an output terminal, wherein the first input terminal of the first AND gate is used to receive the second drive potential, the second input terminal of the first AND gate is used to receive the output potential, and the output terminal of the first AND gate is used to output a first logic potential; and a second AND gate having a first input terminal, a second input terminal, and an output terminal, wherein the first input terminal of the second AND gate is used to receive the third drive potential, the second input terminal of the second AND gate is used to receive the output potential, and the output terminal of the second AND gate is used to output a second logic potential.
在一些實施例中,該偵測及控制電路更包括:一脈波寬度調變積體電路,產生該第一驅動電位;以及一微控制器,產生該第二驅動電位和該第三驅動電位;其中若該第一邏輯電位具有高邏輯位準,則該微控制器將取得跨越該感測電阻器之該第一峰值電位差;其中若該第二邏輯電位具有高邏輯位準,則該微控制器將取得跨越該感測電阻器之該第二峰值電位差。In some embodiments, the detection and control circuit further includes: a pulse width modulation integrated circuit that generates the first drive potential; and a microcontroller that generates the second drive potential and the third drive potential; wherein if the first logic potential has a high logic level, the microcontroller will obtain the first peak potential difference across the sensing resistor; wherein if the second logic potential has a high logic level, the microcontroller will obtain the second peak potential difference across the sensing resistor.
在一些實施例中,若該第一峰值電位差和該第二峰值電位差具有不同之絕對值,則該微控制器將通知該脈波寬度調變積體電路,使得該脈波寬度調變積體電路更輸出一警示電位並產生具有低邏輯位準之該控制電位。In some embodiments, if the first peak potential difference and the second peak potential difference have different absolute values, the microcontroller will notify the pulse width modulation integrated circuit, so that the pulse width modulation integrated circuit further outputs a warning potential and generates the control potential with a low logic level.
為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。In order to make the purpose, features and advantages of the present invention more clearly understood, specific embodiments of the present invention are specifically listed below and described in detail with reference to the accompanying drawings.
在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。Certain terms are used in the specification and patent application to refer to specific components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. This specification and patent application do not use differences in names as a way to distinguish components, but use differences in the functions of components as the criterion for distinction. The words "include" and "including" mentioned throughout the specification and patent application are open terms and should be interpreted as "including but not limited to". The word "substantially" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and achieve the basic technical effect. In addition, the word "coupled" in this specification includes any direct and indirect electrical connection means. Therefore, if a first device is described herein as being coupled to a second device, it means that the first device may be directly electrically connected to the second device, or may be indirectly electrically connected to the second device via other devices or connection means.
第1圖係顯示根據本發明一實施例所述之電源供應器100之示意圖。例如,電源供應器100可應用於桌上型電腦、筆記型電腦,或一體成形電腦。如第1圖所示,電源供應器100包括:一橋式整流器110、一升壓電感器LU、一功率切換器120、一第一輸出級電路130、一切換電路140、一變壓器150、一諧振電容器CR、一感測電阻器RS、一第二輸出級電路160,以及一偵測及控制電路170。必須注意的是,雖然未顯示於第1圖中,但電源供應器100更可包括其他元件,例如:一穩壓器或(且)一負回授電路。FIG. 1 is a schematic diagram showing a
橋式整流器110可根據一第一輸入電位VIN1和一第二輸入電位VIN2來產生一整流電位VR,其中第一輸入電位VIN1和第二輸入電位VIN2之間可形成具有任意頻率和任意振幅之一交流電壓。例如,交流電壓之頻率可約為50Hz或60Hz,而交流電壓之方均根值可約介於90V至264V之間,但亦不僅限於此。升壓電感器LU可接收整流電位VR。功率切換器120可根據一第一驅動電位VG1來選擇性地將升壓電感器LU耦接至一接地電位VSS(例如:0V)。例如,若第一驅動電位VG1具有一高邏輯位準(亦即,邏輯「1」),則功率切換器120可將升壓電感器LU耦接至接地電位VSS(亦即,功率切換器120可近似於一短路路徑);反之,若第一驅動電位VG1具有一低邏輯位準(亦即,邏輯「0」),則功率切換器120不會將升壓電感器LU耦接至接地電位VSS(亦即,功率切換器120可近似於一斷路路徑)。The
第一輸出級電路130係耦接至升壓電感器LU,其中第一輸出級電路130可根據一控制電位VC來決定是否要產生一中間電位VE。例如,若控制電位VC具有一高邏輯位準,則第一輸出級電路130可正常地輸出中間電位VE;反之,若控制電位VC具有一低邏輯位準,則第一輸出級電路130可立刻停止輸出中間電位VE。切換電路140可根據中間電位VE、一第二驅動電位VG2,以及一第三驅動電位VG3來產生一切換電位VW。The first
變壓器150包括一主線圈151、一第一副線圈152,以及一第二副線圈153。變壓器150更可內建一漏電感器LR和一激磁電感器LM,其中漏電感器LR、激磁電感器LM,以及主線圈151皆可位於變壓器150之同一側,而第一副線圈152和第二副線圈153則皆可位於變壓器150之相對另一側。主線圈151可經由漏電感器LR接收切換電位VW,而第一副線圈152和第二副線圈153則可回應於切換電位VW來進行操作。諧振電容器CR係耦接至激磁電感器LM。例如,漏電感器LR、激磁電感器LM,以及諧振電容器CR三者可共同形成電源供應器100之一諧振槽(Resonant Tank)。另外,感測電阻器RS係耦接至諧振電容器CR。第二輸出級電路160係耦接至第一副線圈152和第二副線圈153,並可產生一輸出電位VOUT。例如,輸出電位VOUT可為一直流電位,其電位位準可介於18V至22V之間,但亦不僅限於此。The
偵測及控制電路170可偵測跨越感測電阻器RS之一第一峰值電位差VD1和一第二峰值電位差VD2,其可對應於切換電路140之不同操作週期。例如,偵測及控制電路170可將第一峰值電位差VD1之絕對值與第二峰值電位差VD2之絕對值互相比較,但亦不僅限於此。接著,偵測及控制電路170更可根據第一峰值電位差VD1和第二峰值電位差VD2來產生控制電位VC、第一驅動電位VG1、第二驅動電位VG2,以及第三驅動電位VG3。由於偵測及控制電路170可持續地監控電源供應器100之操作狀態,故此種設計將可避免電源供應器100意外產生不平衡之諧振能量。根據實際量測結果,本發明所提之電源供應器100將可大幅提升其自身之輸出穩定度。The detection and
以下實施例將介紹電源供應器100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。The following embodiments will introduce the detailed structure and operation of the
第2圖係顯示根據本發明一實施例所述之電源供應器200之電路圖。在第2圖之實施例中,在第2圖之實施例中,電源供應器200具有一第一輸入節點NIN1、一第二輸入節點NIN2,以及一輸出節點NOUT,並包括:一橋式整流器210、一升壓電感器LU、一功率切換器220、一第一輸出級電路230、一切換電路240、一變壓器250、一諧振電容器CR、一感測電阻器RS、一第二輸出級電路260,以及一偵測及控制電路270。電源供應器200之第一輸入節點NIN1和第二輸入節點NIN2可分別由一外部輸入電源處(未顯示)接收一第一輸入電位VIN1和一第二輸入電位VIN2,而電源供應器200之輸出節點NOUT則可用於輸出一輸出電位VOUT至一系統端(未顯示),例如:一筆記型電腦。FIG. 2 is a circuit diagram of a
橋式整流器210包括一第一二極體D1、一第二二極體D2、一第三二極體D3,以及一第四二極體D4。第一二極體D1具有一陽極和一陰極,其中第一二極體D1之陽極係耦接至第一輸入節點NIN1,而第一二極體D1之陰極係耦接至一第一節點N1以輸出一整流電位VR。第二二極體D2具有一陽極和一陰極,其中第二二極體D2之陽極係耦接至第二輸入節點NIN2,而第二二極體D2之陰極係耦接至第一節點N1。第三二極體D3具有一陽極和一陰極,其中第三二極體D3之陽極係耦接至一接地電位VSS,而第三二極體D3之陰極係耦接至第一輸入節點NIN1。第四二極體D4具有一陽極和一陰極,其中第四二極體D4之陽極係耦接至接地電位VSS,而第四二極體D4之陰極係耦接至第二輸入節點NIN2。The
升壓電感器LU具有一第一端和一第二端,其中升壓電感器LU之第一端係耦接至第一節點N1以接收整流電位VR,而升壓電感器LU之第二端係耦接至一第二節點N2。The boost inductor LU has a first terminal and a second terminal, wherein the first terminal of the boost inductor LU is coupled to the first node N1 to receive the rectified potential VR, and the second terminal of the boost inductor LU is coupled to a second node N2.
功率切換器220包括一第一電晶體M1。例如,第一電晶體M1可為一N型金氧半場效電晶體(N-type Metal-Oxide-Semiconductor Field-Effect Transistor,NMOSFET)。第一電晶體M1具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第一電晶體M1之控制端係用於接收一第一驅動電位VG1,第一電晶體M1之第一端係耦接至接地電位VSS,而第一電晶體M1之第二端係耦接至第二節點N2。The
第一輸出級電路230包括一第二電晶體M2、一第五二極體D5,以及一第一電容器C1。例如,第二電晶體M2可為一N型金氧半場效電晶體。第五二極體D5具有一陽極和一陰極,其中第五二極體D5之陽極係耦接至第二節點N2,而第五二極體D5之陰極係耦接至一第三節點N3。第一電容器C1具有一第一端和一第二端,其中第一電容器C1之第一端係耦接至第三節點N3,而第一電容器C1之第二端係耦接至接地電位VSS。第二電晶體M2具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第二電晶體M2之控制端係用於接收一控制電位VC,第二電晶體M2之第一端係耦接至一第四節點N4以選擇性地輸出一中間電位VE,而第二電晶體M2之第二端係耦接至第三節點N3。The first
切換電路240包括一第三電晶體M3和一第四電晶體M4。例如,第三電晶體M3和第四電晶體M4可各自為一N型金氧半場效電晶體。第三電晶體M3具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第三電晶體M3之控制端係用於接收一第二驅動電位VG2,第三電晶體M3之第一端係耦接至一第五節點N5以輸出一切換電位VW,而第三電晶體M3之第二端係耦接至第四節點N4以接收中間電位VE。第四電晶體M4具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第四電晶體M4之控制端係用於接收一第三驅動電位VG3,第四電晶體M4之第一端係耦接至接地電位VSS,而第四電晶體M4之第二端係耦接至第五節點N5。The
變壓器250包括一主線圈251、一第一副線圈252,以及一第二副線圈253,其中變壓器250更內建一漏電感器LR和一激磁電感器LM。漏電感器LR和激磁電感器LM皆可為變壓器250製造時所附帶產生之固有元件,其並非外部獨立元件。漏電感器LR、主線圈251,以及激磁電感器LM皆可位於變壓器250之同一側(例如:一次側),而第一副線圈252和第二副線圈253則皆可位於變壓器250之相對另一側(例如:二次側,其可與一次側互相隔離開來)。漏電感器LR具有一第一端和一第二端,其中漏電感器LR之第一端係耦接至第五節點N5以接收切換電位VW,而漏電感器LR之第二端係耦接至一第六節點N6。主線圈251具有一第一端和一第二端,其中主線圈251之第一端係耦接至第六節點N6,而主線圈251之第二端係耦接至一第七節點N7。激磁電感器LM具有一第一端和一第二端,其中激磁電感器LM之第一端係耦接至第六節點N6,而激磁電感器LM之第二端係耦接至第七節點N7。諧振電容器CR具有一第一端和一第二端,其中諧振電容器CR之第一端係耦接至第七節點N7,而諧振電容器CR之第二端係耦接至一第八節點N8。例如,漏電感器LR、激磁電感器LM,以及諧振電容器CR三者可共同形成電源供應器200之一諧振槽。感測電阻器RS具有一第一端和一第二端,其中感測電阻器RS之第一端係耦接至第八節點N8,而感測電阻器RS之第二端係耦接至接地電位VSS。例如,感測電阻器RS之電阻值可小於或等於5Ω,而有一電位差ΔV則可跨越過感測電阻器RS。第一副線圈252具有一第一端和一第二端,其中第一副線圈252之第一端係耦接至一第九節點N9,而第一副線圈252之第二端係耦接至一共同節點NCM。例如,共同節點NCM可提供一共同電位,其可被視為另一接地電位,並可與前述之接地電位VSS相同或相異。第二副線圈253具有一第一端和一第二端,其中第二副線圈253之第一端係耦接至共同節點NCM,而第二副線圈253之第二端係耦接至一第十節點N10。The
第二輸出級電路260包括一第六二極體D6、一第七二極體D7,以及一第二電容器C2。第六二極體D6具有一陽極和一陰極,其中第六二極體D6之陽極係耦接至第九節點N9,而第六二極體D6之陰極係耦接至輸出節點NOUT。第七二極體D7具有一陽極和一陰極,其中第七二極體D7之陽極係耦接至第十節點N10,而第七二極體D7之陰極係耦接至輸出節點NOUT。第二電容器C2具有一第一端和一第二端,其中第二電容器C2之第一端係耦接至輸出節點NOUT,而第二電容器C2之第二端係耦接至共同節點NCM。The second
偵測及控制電路270包括:一第一及閘(AND Gate)272、一第二及閘274、一脈波寬度調變積體電路(Pulse Width Modulation Integrated Circuit,PWM IC)276,以及一微控制器(Microcontroller Unit,MCU)278。The detection and
第一及閘272具有一第一輸入端、一第二輸入端,以及一輸出端,其中第一及閘272之第一輸入端係用於接收第二驅動電位VG2,第一及閘272之第二輸入端係用於接收輸出電位VOUT,而第一及閘272之輸出端係用於輸出一第一邏輯電位VL1。例如,若第二驅動電位VG2和輸出電位VOUT兩者皆為高邏輯位準,則第一及閘272將可輸出具有高邏輯位準之第一邏輯電位VL1;反之,若第二驅動電位VG2和輸出電位VOUT之任一者為低邏輯位準,則第一及閘272將可輸出具有低邏輯位準之第一邏輯電位VL1。The first AND
第二及閘274具有一第一輸入端、一第二輸入端,以及一輸出端,其中第二及閘274之第一輸入端係用於接收第三驅動電位VG3,第二及閘274之第二輸入端係用於接收輸出電位VOUT,而第二及閘274之輸出端係用於輸出一第二邏輯電位VL2。例如,若第三驅動電位VG3和輸出電位VOUT兩者皆為高邏輯位準,則第二及閘274將可輸出具有高邏輯位準之第二邏輯電位VL2;反之,若第三驅動電位VG3和輸出電位VOUT之任一者為低邏輯位準,則第二及閘274將可輸出具有低邏輯位準之第二邏輯電位VL2。The second AND
脈波寬度調變積體電路276可產生第一驅動電位VG1。微控制器278係耦接至脈波寬度調變積體電路276,其中微控制器278可產生第二驅動電位VG2和第三驅動電位VG3。例如,第二驅動電位VG2和第三驅動電位VG3可具有互補(Complementary)之邏輯位準。The pulse width modulation integrated
微控制器278係耦接至感測電阻器RS之第一端和第二端,並可由第一及閘272和第二及閘274來進行控制。詳細而言,微控制器278更可根據第一邏輯電位VL1和第二邏輯電位VL2來監控前述之電位差ΔV。The
在一些實施例中,若第一邏輯電位VL1具有高邏輯位準,則微控制器278將取得跨越感測電阻器RS之一第一峰值電位差VD1。例如,於第一邏輯電位VL1具有高邏輯位準之期間內,第一峰值電位差VD1可等同於前述之電位差ΔV之最高值,但亦不僅限於此。In some embodiments, if the first logic potential VL1 has a high logic level, the
在一些實施例中,若第二邏輯電位VL2具有高邏輯位準,則微控制器278將取得跨越感測電阻器RS之一第二峰值電位差VD2。例如,於第二邏輯電位VL2具有高邏輯位準之期間內,第二峰值電位差VD2可等同於前述之電位差ΔV之最低值,但亦不僅限於此。接著,微控制器278還可將第一峰值電位差VD1之絕對值與第二峰值電位差VD2之絕對值互相比較,其詳細操作方式可如下列實施例所述。In some embodiments, if the second logic potential VL2 has a high logic level, the
第3圖係顯示根據本發明一實施例所述之電源供應器200操作於平衡模式之電位波形圖,其中橫軸代表時間(s),而縱軸代表各個電位位準(V)。在第3圖之實施例中,若第一峰值電位差VD1和第二峰值電位差VD2具有相等之絕對值(
),則微控制器278將會判斷電源供應器200已提供平衡之諧振能量(亦即,平衡模式)。此時,微控制器278還會通知脈波寬度調變積體電路276,使得脈波寬度調變積體電路276可產生具有高邏輯位準之控制電位VC。
FIG. 3 is a potential waveform diagram of the
第4圖係顯示根據本發明一實施例所述之電源供應器200操作於非平衡模式之電位波形圖,其中橫軸代表時間(s),而縱軸代表各個電位位準(V)。在第4圖之實施例中,若第一峰值電位差VD1和第二峰值電位差VD2具有不同之絕對值(
),則微控制器278將會判斷電源供應器200正提供不平衡之諧振能量(亦即,非平衡模式)。此時,微控制器278還會通知脈波寬度調變積體電路276,使得脈波寬度調變積體電路276更輸出一警示電位VA並可產生具有低邏輯位準之控制電位VC。
FIG. 4 is a potential waveform diagram of the
第5圖係顯示根據本發明一實施例所述之系統端290之示意圖。系統端290包括一主電路板292和嵌入式控制器(Embedded Controller,EC)294。電源供應器200之輸出電位VOUT可提供電力給主電路板292。另外,當接收到警示電位VA時,嵌入式控制器294將會偵測到電源供應器200之不平衡問題。因此,系統端290可基於嵌入式控制器294之偵測與通知而能為電源供應器200即將發生之異常電壓振盪作好充足準備。FIG. 5 is a schematic diagram showing a
第6圖係顯示根據本發明一實施例所述之電源供應器200由平衡模式切換至非平衡模式之電位波形圖,其中橫軸代表時間(s),而縱軸代表各個電位位準(V)。如第6圖所示,在一特定時間點TS之前,電源供應器200係操作於平衡模式。接著,在特定時間點TS之後,微控制器278可將控制電位VC由高邏輯位準切換為低邏輯位準,從而可完全關閉電源供應器200。必須注意的是,本發明所提之設計方式將能有效防免電源供應器200提供不穩定之輸出電位VOUT。FIG. 6 is a potential waveform diagram showing the
本發明提出一種新穎之電源供應器。根據實際量測結果,使用前述設計之電源供應器之輸出穩定度將可大幅改善,故其很適合應用於各種各式之裝置當中。The present invention proposes a novel power supply. According to actual measurement results, the output stability of the power supply using the above design can be greatly improved, so it is very suitable for application in various types of devices.
值得注意的是,以上所述之電位、電流、電阻值、電感值、電容值,以及其餘元件參數均非為本發明之限制條件。設計者可以根據不同需要調整這些設定值。本發明之電源供應器並不僅限於第1-6圖所圖示之狀態。本發明可以僅包括第1-6圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之電源供應器當中。雖然本發明之實施例係使用金氧半場效電晶體為例,但本發明並不僅限於此,本技術領域人士可改用其他種類之電晶體,例如:接面場效電晶體,或是鰭式場效電晶體等等,而不致於影響本發明之效果。It is worth noting that the potential, current, resistance, inductance, capacitance, and other component parameters described above are not limiting conditions of the present invention. Designers can adjust these settings according to different needs. The power supply of the present invention is not limited to the states shown in Figures 1-6. The present invention may only include any one or more features of any one or more embodiments of Figures 1-6. In other words, not all of the features shown in the diagrams need to be implemented in the power supply of the present invention at the same time. Although the embodiments of the present invention use metal oxide semi-conductor field effect transistors as an example, the present invention is not limited to this. People in the technical field can use other types of transistors, such as junction field effect transistors, or fin field effect transistors, etc., without affecting the effects of the present invention.
在本說明書以及申請專利範圍中的序數,例如「第一」、「第二」、「第三」等等,彼此之間並沒有順序上的先後關係,其僅用於標示區分兩個具有相同名字之不同元件。Ordinal numbers in this specification and the scope of the patent application, such as "first", "second", "third", etc., have no sequential relationship with each other, and are only used to mark and distinguish two different components with the same name.
本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention is disclosed as above with the preferred embodiments, it is not intended to limit the scope of the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the attached patent application.
100,200:電源供應器 110,210:橋式整流器 120,220:功率切換器 130,230:第一輸出級電路 140,240:切換電路 150,250:變壓器 151,251:主線圈 152,252:第一副線圈 153,253:第二副線圈 160,260:第二輸出級電路 170,270:偵測及控制電路 272:第一及閘 274:第二及閘 276:脈波寬度調變積體電路 278:微控制器 290:系統端 292:主電路板 294:嵌入式控制器 C1:第一電容器 C2:第二電容器 CR:諧振電容器 D1:第一二極體 D2:第二二極體 D3:第三二極體 D4:第四二極體 D5:第五二極體 D6:第六二極體 D7:第七二極體 LM:激磁電感器 LR:漏電感器 LU:升壓電感器 M1:第一電晶體 M2:第二電晶體 M3:第三電晶體 M4:第四電晶體 N1:第一節點 N2:第二節點 N3:第三節點 N4:第四節點 N5:第五節點 N6:第六節點 N7:第七節點 N8:第八節點 N9:第九節點 N10:第十節點 NCM:共同節點 NIN1:第一輸入節點 NIN2:第二輸入節點 NOUT:輸出節點 RS:感測電阻器 TS:特定時間點 VA:警示電位 VC:控制電位 VD1:第一峰值電位差 VD2:第二峰值電位差 VE:中間電位 VG1:第一驅動電位 VG2:第二驅動電位 VG3:第三驅動電位 VIN1:第一輸入電位 VIN2:第二輸入電位 VL1:第一邏輯電位 VL2:第二邏輯電位 VOUT:輸出電位 VR:整流電位 VSS:接地電位 VW:切換電位 ΔV:電位差100,200: Power supply 110,210: Bridge rectifier 120,220: Power switch 130,230: First output stage circuit 140,240: Switching circuit 150,250: Transformer 151,251: Main coil 152,252: First secondary coil 153,253: Second secondary coil 160,260: Second output stage circuit 170,270: Detection and control circuit 272: First gate 274: Second gate 276: Pulse width modulation integrated circuit 278: Microcontroller 290: System side 292: Main circuit board 294: Embedded controller C1: First capacitor C2: Second capacitor CR: Resonance capacitor D1: First diode D2: Second diode D3: Third diode D4: Fourth diode D5: Fifth diode D6: Sixth diode D7: Seventh diode LM: Excitation inductor LR: Leakage inductor LU: Boost inductor M1: First transistor M2: Second transistor M3: Third transistor M4: Fourth transistor N1: First node N2: Second node N3: Third node N4: Fourth node N5: Fifth node N6: Sixth node N7: Seventh node N8: Eighth node N9: Ninth node N10: Tenth node NCM: Common node NIN1: First input node NIN2: Second input node NOUT: Output node RS: Sense resistor TS: Specific time point VA: Warning potential VC: Control potential VD1: First peak potential difference VD2: Second peak potential difference VE: Middle potential VG1: First drive potential VG2: Second drive potential VG3: Third drive potential VIN1: First input potential VIN2: Second input potential VL1: First logic potential VL2: Second logic potential VOUT: Output potential VR: Rectification potential VSS: Ground potential VW: Switching potential ΔV: Potential difference
第1圖係顯示根據本發明一實施例所述之電源供應器之示意圖。 第2圖係顯示根據本發明一實施例所述之電源供應器之電路圖。 第3圖係顯示根據本發明一實施例所述之電源供應器操作於平衡模式之電位波形圖。 第4圖係顯示根據本發明一實施例所述之電源供應器操作於非平衡模式之電位波形圖。 第5圖係顯示根據本發明一實施例所述之系統端之示意圖。 第6圖係顯示根據本發明一實施例所述之電源供應器由平衡模式切換至非平衡模式之電位波形圖。 FIG. 1 is a schematic diagram showing a power supply according to an embodiment of the present invention. FIG. 2 is a circuit diagram showing a power supply according to an embodiment of the present invention. FIG. 3 is a potential waveform diagram showing a power supply according to an embodiment of the present invention operating in a balanced mode. FIG. 4 is a potential waveform diagram showing a power supply according to an embodiment of the present invention operating in an unbalanced mode. FIG. 5 is a schematic diagram showing a system end according to an embodiment of the present invention. FIG. 6 is a potential waveform diagram showing a power supply according to an embodiment of the present invention switching from a balanced mode to an unbalanced mode.
100:電源供應器 100: Power supply
110:橋式整流器 110: Bridge rectifier
120:功率切換器 120: Power switch
130:第一輸出級電路 130: First output stage circuit
140:切換電路 140: Switching circuit
150:變壓器 150: Transformer
151:主線圈 151: Main coil
152:第一副線圈 152: First coil
153:第二副線圈 153: Second coil
160:第二輸出級電路 160: Second output stage circuit
170:偵測及控制電路 170: Detection and control circuit
CR:諧振電容器 CR: Resonance capacitor
LM:激磁電感器 LM: Magnetizing inductor
LR:漏電感器 LR: Leakage Inductor
LU:升壓電感器 LU: Boost Inductor
RS:感測電阻器 RS: Sensing resistor
VC:控制電位 VC: control potential
VD1:第一峰值電位差 VD1: first peak potential difference
VD2:第二峰值電位差 VD2: Second peak potential difference
VE:中間電位 VE: intermediate potential
VG1:第一驅動電位 VG1: first driving potential
VG2:第二驅動電位 VG2: Second driving potential
VG3:第三驅動電位 VG3: The third driving potential
VIN1:第一輸入電位 VIN1: first input potential
VIN2:第二輸入電位 VIN2: Second input potential
VOUT:輸出電位 VOUT: output voltage
VR:整流電位 VR: Rectification potential
VSS:接地電位 VSS: ground potential
VW:切換電位 VW: Switching potential
Claims (10)
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| TW113127647A TWI886000B (en) | 2024-07-25 | 2024-07-25 | Power supply device with high output stability |
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| Application Number | Priority Date | Filing Date | Title |
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| TW113127647A TWI886000B (en) | 2024-07-25 | 2024-07-25 | Power supply device with high output stability |
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| TWI886000B true TWI886000B (en) | 2025-06-01 |
| TW202606164A TW202606164A (en) | 2026-02-01 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201545454A (en) * | 2014-05-30 | 2015-12-01 | Wistron Corp | LLC resonant converter |
| US20230127124A1 (en) * | 2020-06-12 | 2023-04-27 | Agilent Technologies, Inc. | Dual feedback loop for precision high voltage power supply |
| TWI801261B (en) * | 2022-06-13 | 2023-05-01 | 宏碁股份有限公司 | Power supply device with fast discharge function |
| TWI812407B (en) * | 2022-08-17 | 2023-08-11 | 宏碁股份有限公司 | Power supply device with high output stability |
| TWI837944B (en) * | 2022-11-15 | 2024-04-01 | 宏碁股份有限公司 | Power supply device with high output stability |
-
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- 2024-07-25 TW TW113127647A patent/TWI886000B/en active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201545454A (en) * | 2014-05-30 | 2015-12-01 | Wistron Corp | LLC resonant converter |
| US20230127124A1 (en) * | 2020-06-12 | 2023-04-27 | Agilent Technologies, Inc. | Dual feedback loop for precision high voltage power supply |
| TWI801261B (en) * | 2022-06-13 | 2023-05-01 | 宏碁股份有限公司 | Power supply device with fast discharge function |
| TWI812407B (en) * | 2022-08-17 | 2023-08-11 | 宏碁股份有限公司 | Power supply device with high output stability |
| TWI837944B (en) * | 2022-11-15 | 2024-04-01 | 宏碁股份有限公司 | Power supply device with high output stability |
| US20240162832A1 (en) * | 2022-11-15 | 2024-05-16 | Acer Incorporated | Power supply device with high output stability |
| EP4372973A1 (en) * | 2022-11-15 | 2024-05-22 | ACER Incorporated | Power supply device with high output stability |
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