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TWI714686B - 光阻圖案形成方法及顯影條件的決定方法 - Google Patents

光阻圖案形成方法及顯影條件的決定方法 Download PDF

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Publication number
TWI714686B
TWI714686B TW105141364A TW105141364A TWI714686B TW I714686 B TWI714686 B TW I714686B TW 105141364 A TW105141364 A TW 105141364A TW 105141364 A TW105141364 A TW 105141364A TW I714686 B TWI714686 B TW I714686B
Authority
TW
Taiwan
Prior art keywords
photoresist
polymer
molecular weight
photoresist pattern
less
Prior art date
Application number
TW105141364A
Other languages
English (en)
Chinese (zh)
Other versions
TW201736969A (zh
Inventor
星野学
Original Assignee
日商日本瑞翁股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日本瑞翁股份有限公司 filed Critical 日商日本瑞翁股份有限公司
Publication of TW201736969A publication Critical patent/TW201736969A/zh
Application granted granted Critical
Publication of TWI714686B publication Critical patent/TWI714686B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW105141364A 2015-12-28 2016-12-14 光阻圖案形成方法及顯影條件的決定方法 TWI714686B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015255939 2015-12-28
JP2015-255939 2015-12-28

Publications (2)

Publication Number Publication Date
TW201736969A TW201736969A (zh) 2017-10-16
TWI714686B true TWI714686B (zh) 2021-01-01

Family

ID=59225160

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105141364A TWI714686B (zh) 2015-12-28 2016-12-14 光阻圖案形成方法及顯影條件的決定方法

Country Status (3)

Country Link
JP (1) JP6844549B2 (fr)
TW (1) TWI714686B (fr)
WO (1) WO2017115622A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019077956A1 (fr) * 2017-10-20 2019-04-25 日本ゼオン株式会社 Copolymère et composition de réserve positive
WO2019150966A1 (fr) * 2018-02-05 2019-08-08 日本ゼオン株式会社 Composition de réserve, et film de réserve
JP2020086455A (ja) * 2018-11-21 2020-06-04 日本ゼオン株式会社 レジストパターン形成方法
WO2022176685A1 (fr) * 2021-02-19 2022-08-25 富士フイルム株式会社 Procédé de détermination de rapport de mélange et dispositif de développement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5983157A (ja) * 1982-09-28 1984-05-14 エクソン・リサ−チ・アンド・エンジニアリング・カンパニ− ポジ型重合体レジストの感度及びコントラストを増大させる方法
JPH02197846A (ja) * 1989-01-26 1990-08-06 Toray Ind Inc 感放射線ポジ型レジスト
JP2009132640A (ja) * 2007-11-29 2009-06-18 Mitsubishi Chemicals Corp フラーレン誘導体、並びにその溶液及びその膜
JP2009134020A (ja) * 2007-11-29 2009-06-18 Frontier Carbon Corp レジスト組成物及びパターン形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2867479B2 (ja) * 1989-10-19 1999-03-08 富士通株式会社 レジストパターンの形成方法
JP5113504B2 (ja) * 2007-12-11 2013-01-09 株式会社サトー知識財産研究所 被印字媒体供給装置
JP2015115524A (ja) * 2013-12-13 2015-06-22 大日本印刷株式会社 インプリントモールドの製造方法
JP6365015B2 (ja) * 2014-06-30 2018-08-01 大日本印刷株式会社 ポジ型レジスト組成物及びその製造方法、並びに、当該ポジ型レジスト組成物を用いたレジストパターンの製造方法
JP6680292B2 (ja) * 2015-02-20 2020-04-15 日本ゼオン株式会社 重合体およびポジ型レジスト組成物、並びに、レジストパターン形成方法
US10386720B2 (en) * 2015-02-20 2019-08-20 Zeon Corporation Polymer and positive resist composition
JP6575141B2 (ja) * 2015-05-22 2019-09-18 日本ゼオン株式会社 レジストパターン形成方法および現像条件の決定方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5983157A (ja) * 1982-09-28 1984-05-14 エクソン・リサ−チ・アンド・エンジニアリング・カンパニ− ポジ型重合体レジストの感度及びコントラストを増大させる方法
JPH02197846A (ja) * 1989-01-26 1990-08-06 Toray Ind Inc 感放射線ポジ型レジスト
JP2009132640A (ja) * 2007-11-29 2009-06-18 Mitsubishi Chemicals Corp フラーレン誘導体、並びにその溶液及びその膜
JP2009134020A (ja) * 2007-11-29 2009-06-18 Frontier Carbon Corp レジスト組成物及びパターン形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Influence of molecular weight of resist polymers on surface roughness and line-edge roughness, YAMAGUHCI. T. et al., J. Vac. Sci. Technol. B., 2004, 22(6), 2604-2610 *

Also Published As

Publication number Publication date
JPWO2017115622A1 (ja) 2018-10-18
TW201736969A (zh) 2017-10-16
JP6844549B2 (ja) 2021-03-17
WO2017115622A1 (fr) 2017-07-06

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