TWI782203B - Film stripping device - Google Patents

Abstract

The protective film is well peeled off from the wafer in a short time.

A film peeling device Place a peeling film (54) on the protective film (51) pasted on one side of the wafer (W), stretch the peeling film to peel the protective film from the wafer, which has: peeling film Sticking means (31), on the upper surface of the protective adhesive film of the wafer on the holding table (11), press and peel off the adhesive film by the pressing part and stick it; One end of the peeling adhesive film pasted by the means; the moving means (37), peels off the protective adhesive film from the wafer by the relative movement of the clamping means and the holding table; The front-end peeling region of the circle peels off the gas toward the center of the wafer; and is configured to peel off the protective glue from one side of the wafer by the gas jet toward the front-end peeling region in the state where the peeling film is clamped by the clamping means. part of the membrane.

Description

Film peeling device

The invention relates to a stripping device for stripping a protective adhesive film pasted on a wafer.

When grinding a wafer on which components are formed, a protective film is attached to the front surface of the wafer in order to protect the components. After the wafer is ground, a strip-shaped peeling film is attached to the protective film of the wafer, and the protective film is peeled off from the wafer through the peeling film (for example, refer to Patent Documents 1 and 2). The release adhesive film described in Patent Document 1 is adhered to the protective adhesive film by an adhesive paste coated on the entire back surface of the release adhesive film. The peeling adhesive film described in Patent Document 2 is a heat-pressing adhesive film, and the heat-pressing adhesive film is attached to the protective film at the abutting portion by pressing the abutting member against the protective film in a heated state. [Prior art literature] [Patent Document]

[Patent Document 1] Japanese Unexamined Patent Publication No. 2012-028478 [Patent Document 2] Japanese Patent No. 5918928

However, when peeling the protective film from the wafer by stretching the heat-pressed adhesive film, the peeling film needs to be peeled at a low speed while being folded at 90° or more, and there is a problem that it takes a long time to peel the protective film from the wafer. .

In view of the above-mentioned problems, one object of the present invention is to provide an adhesive film peeling device capable of peeling a protective adhesive film from a wafer satisfactorily in a short time.

One aspect of the present invention is an adhesive film peeling device, which sticks a peeling adhesive film on the protective adhesive film attached to one side of the wafer, and stretches the peeling adhesive film to peel the protective adhesive film from the wafer. It is provided with: a holding table, which holds the other side of the wafer; a peeling adhesive film sticking means, on the upper surface of the protective adhesive film of the wafer held by the holding table, press the peeling adhesive film by a pressing part and stick it; The clamping means clamps one end of the peeling adhesive film pasted by the peeling adhesive means; the moving means moves the clamping means and the holding table relative to each other, and stretches the peeling adhesive from the outer side of the wafer toward the center film to peel the protective adhesive film from the wafer; and gas injection means for positioning the gas injection port facing the front end peeling area where the protective adhesive film is peeled from the wafer by the peeling adhesive film stuck near the outer periphery of the wafer , and arranged on the outside of the wafer, the gas is sprayed from the front end peeling area toward the center of the wafer; in the state where the clamping means clamps the peeling film, from the front end peeling area by the gas injection means Gas jetting, peeling off a part of the protective adhesive film from the one side of the wafer, and then stretching the peeling adhesive film to peel the protective adhesive film from the wafer.

According to this configuration, the gas injection port of the gas injection means is directed to the front end peeling region where the protective film is peeled off from the outer peripheral edge of the wafer. The peeling film is clamped by the clamping means and the front peeling area is formed. By injecting gas toward the center of the wafer, the gas enters from the front peeling area between one side of the wafer and the adhesive surface of the protective film, thereby Part of the protective film was peeled off. Since an air layer is made between one side of the wafer and the adhesive surface of the protective film, the rolling of the protective film cannot lift the wafer when peeling starts. Therefore, even if the peeling speed is increased, the wafer will not be damaged, and the protective adhesive film can be peeled off from the wafer well in a short time.

In an adhesive film peeling apparatus according to an aspect of the present invention, the gas injection means intermittently injects gas from at least half of the wafer center to the peeling region at the front end.

In an adhesive film peeling device according to one aspect of the present invention, a plurality of elements are formed in a region of the wafer divided by a planned dividing line, and are bonded in a state of being separated and singulated along the planned dividing line. on the protective adhesive film; the peeling adhesive film is adhered to a peeling direction that is not parallel to the planned dividing line; the gas injection means ejects gas that is not parallel to the planned dividing line.

In the adhesive film peeling apparatus of one aspect of this invention, this gas injection means is an ion generator.

According to the present invention, since the gas injection port of the gas injection means is directed toward the front end peeling area, the peeling is performed while spraying the gas toward the center of the wafer, whereby the protective film can be detached from the wafer well in a short time.

Hereinafter, referring to the accompanying drawings, the adhesive film peeling device of this embodiment will be described. Fig. 1 is a schematic diagram of the adhesive film peeling device of the present embodiment. In addition, in the schematic diagram of the adhesive film peeling apparatus shown in FIG. 1, description of the member which forms a part of the conveyance path of the peeled adhesive film is omitted for convenience of description.

As shown in FIG. 1 , the adhesive film peeling device 1 is configured as follows: stick a peeling adhesive film 54 on the protective adhesive film 51 of the wafer W on the holding table 11 , and peel the protective adhesive film 51 from the wafer W through the peeling adhesive film 54 . One side of the wafer W is pasted with a UV-curable protective film 51 , and the components are protected by the protective film 51 in the front grinding step of the wafer W. An adhesive film 52 is pasted on the other side of the wafer W, and an annular frame 53 is pasted on the periphery of the adhesive film 52 . The wafer W is carried into the adhesive film peeling device 1 in a state supported by the ring frame 53 through the adhesive film 52 .

On the holding table 11 of the adhesive film peeling device 1 , the holding surface 12 is formed of a porous ceramic material, and the other side of the wafer W is held by the negative pressure generated on the holding surface 12 . Above the holding table 11 , an adhesive film roll (not shown) for winding the strip-shaped peeling adhesive film 54 in a roll is rotatably supported. The peeling adhesive film 54 is a strip-shaped adhesive film of thermal pressing type, and is attached to the protective adhesive film 51 by pressing and thermal pressing in a heated state. Above the holding table 11 are provided: a driven roller 21 that is driven to rotate as the peeling adhesive film 54 is pulled out; and a pair of holding rollers 22 that hold only the peeling adhesive film 54 that has been pulled out to a predetermined length.

The driven roller 21 refolds the peeling adhesive film 54 pulled out from the adhesive film roll toward the pair of holding rollers 22 , and applies tension to the peeling adhesive film 54 by refolding the peeling adhesive film 54 . The pair of holding rollers 22 are sandwiched between the path of the peeling adhesive film 54 folded back by the driven roller 21 and face each other, and are arranged so as to be in rolling contact with both sides of the peeling adhesive film 54 . The rolling contact surfaces of the pair of holding rollers 22 are formed of a material capable of pinching and peeling the adhesive film 54 from both sides. The pair of holding rollers 22 is connected with a braking mechanism (not shown), so that tension acts on the peeling adhesive film 54 pulled out from the adhesive film roll.

The adhesive film peeling device 1 is provided with a clamping means 25 for holding one end of the peeled adhesive film 54 at a position separated in a direction in which the peeled adhesive film 54 is pulled out from the pair of holding rollers 22 . The holding means 25 holds the peeling adhesive film 54 by bringing the movable claw 27 close to the fixed claw 26 , and releases one end of the peeling adhesive film 54 by separating the movable claw 27 from the fixed claw 26 . The clamping means 25 is connected with a pull-out mechanism 39 , and when the peeling adhesive film 54 is clamped by the clamping means 25 , the clamping means 25 is moved from the clamping position to the pulling-out direction by the pull-out mechanism 39 . By this, only the peeling tape 54 of a predetermined length for peeling of the protective tape 51 is pulled out from the tape roll.

Between the pair of holding rollers 22 and the clamping means 25 is provided a peeling tape sticking means 31 , which sticks the peeling tape 54 to the upper surface of the protective tape 51 of the wafer W on the holding table 11 . The peeling tape sticking means 31 is provided with a pressing part 32 for pressing the peeling tape 54 on the upper surface of the protective tape 51 . The pressing part 32 approaches the holding table 11 or separates from the holding table 11 by the lifting means 34, and is heated by the heating means 35, such as a heater. The release adhesive film 54 is pressed against the upper surface of the protective adhesive film 51 while being heated by the pressing portion 32 , thereby thermally pressing the release adhesive film 54 onto the protective adhesive film 51 on the contact surface 33 of the pressing portion 32 .

Between the pair of holding rollers 22 and the pressing part 32, a cutting part 36 for cutting the peeling adhesive film 54 stuck on the protective adhesive film 51 is provided. The cutting part 36 is configured to be movable in the vertical direction, and cuts the peeling tape 54 by moving downward in a state where the peeling tape 54 is attached to the protective tape 51 . The moving means 37 for peeling the protective film 51 from the wafer W is connected to the holding table 11 . The moving means 37 moves the holding table 11 substantially horizontally in a state where the peeling adhesive film 54 is clamped by the clamping means 25, thereby stretching the peeling adhesive film 54 from the outer side of the wafer W toward the center, thereby removing the wafer W from the wafer W. Circle W peeled off.

Incidentally, the peeling force for peeling the protective adhesive film 51 from one side of the wafer W depends on the peeling speed. That is, the faster the peeling speed, the more the peeling force is required, and the slower the peeling speed, the less the peeling force is required. Therefore, when the protective adhesive film 51 is peeled off from the wafer W in one direction, if the peeling speed is too fast, one side of the wafer W and the adhesive surface of the protective adhesive film 51 cannot be completely peeled off, and cracks may occur on the outer periphery of the wafer. Case. Therefore, it is necessary to peel off the protective adhesive film 51 from the wafer W while the peeling speed is slowed down.

Therefore, in this embodiment, a gas injection means 46 is provided radially outward of the wafer W, and the gas injection means 46 injects gas from the outer peripheral edge of the wafer toward the front-stage peeling region where the protective film 51 is slightly peeled off. By spraying the gas to the front-end peeling area, the gas enters from the front-end peeling area between one side of the wafer W and the bonding surface of the protective film 51 , so that the peeling of the protective film 51 from the wafer W is facilitated. Therefore, by peeling the protective adhesive film 51 from the wafer W while spraying the gas, the peeling speed without damage to the wafer W can be increased, and the peeling time of the protective adhesive film 51 can be shortened.

Hereinafter, referring to FIG. 2 and FIG. 3, the peel-off film sticking means and the gas injection means will be described. Fig. 2 is a perspective view of the peeling adhesive film sticking means of this embodiment. FIG. 3 is an explanatory diagram of gas injection in the present embodiment.

As shown in FIG. 2 , the peeling adhesive film sticking means 31 protrudes from the lower surface of the heating means 35 to press the pressing part 32 . The contact surface of the pressing portion 32 is circular in shape, and is formed so that the peeling adhesive film 54 can be hot-pressed on the upper surface of the protective adhesive film 51 in a circular shape. The abutting surface 33 of the pressing part 32 is formed, for example, with a small diameter of 2.5 [mm], which suppresses the sticking area of the peeling adhesive film 54 to the sticking area A of the protective adhesive film 51 . The outer edge of the abutting surface 33 has an arc shape with a curvature greater than that of the outer peripheral edge of the wafer W, and the peeling starting point P for peeling the protective adhesive film 51 from the wafer W can be positioned in the arc shape of the sticking area A.

Because the peeling adhesive film 54 is attached to the protective adhesive film 51 at the peeling starting point P (refer to FIG. 3A ), the pulling force of the peeling adhesive film 54 acts directly on the direction in which the protective adhesive film 51 is rolled up from the wafer W. Therefore, the protective adhesive film 51 can be peeled off smoothly with a weak pulling force without damaging the outer peripheral edge of the wafer W. Since the peeling can be performed smoothly, the breakage of the wafer W can be suppressed and the peeling speed can be increased. Furthermore, because the peeling adhesive film 54 is adhered to the protective adhesive film 51 in a circular shape, the pulling force acting in the peeling direction is borne by the wide sticking area A, so that the peeling adhesive film 54 will not be peeled off from the protective adhesive film 51 .

As shown in FIG. 3A and FIG. 3B , the gas injection means 46 assists the peeling off of the protective film 51 by injecting gas, for example, is constituted by an ion generator that injects ionized air. By forming the gas injection means 46 with an ion generator, the static electricity generated when the protective film 51 is peeled off with ionized air is eliminated to prevent component failure caused by electrostatic damage. The gas injection means 46 is arranged on the radially outer side of the wafer W in the vicinity of the sticking area A of the release tape 54 . The gas injection means 46 is connected to a gas source 48 through a pipeline, and only a predetermined amount of gas is injected from the gas source 48 toward the gas injection means 46 .

The gas injection port 47 of the gas injection means 46 is positioned at the height position of the boundary surface between the wafer W and the protective adhesive film 51 in a side view, and faces the center of the wafer W in a direction parallel to the peeling direction of the protective adhesive film 51 in a top view. . That is, the gas injection port 47 is positioned facing the front end peeling area 50 where the protective adhesive film 51 is peeled from the wafer W by the peeling tape 54 attached near the outer peripheral edge of the wafer W. By confirming the aiming of the gas injection port 47 in the tip peeling area 50 , the gas can be injected intensively toward the slightly rolled tip peeling area 50 .

In the state where the clamping means 25 (refer to FIG. 1 ) clamp the peeling adhesive film 54 to form the front end peeling area 50 , the gas injection means 46 injects gas instantaneously from the front end peeling area 50 toward the center of the wafer. Gas enters from between the wafer W and the protective adhesive film 51 in the front-end peeling area 50 , and one side of the wafer W is peeled off from the adhesive surface of the protective adhesive film 51 by the passing of the gas. And, the protective adhesive film 51 is partially peeled off from one side of the wafer W by the gas diffusing toward the center of the wafer. Thereby, the wafer W will not be damaged as the protective adhesive film 51 is rolled up, and the peeling speed can be increased to peel the protective adhesive film 51 in a short time.

In addition, since the protective film 51 is peeled from the wafer W by the gas jet, even if the peeling amount of the protective film 51 is small when the front peeling region 50 is formed, it can sufficiently function as the front peeling region 50 . In the formation operation of the front-end peeling region 50 , the peeling speed is set to be slow because the outer peripheral edge of the wafer W is easily damaged, but the peeling time can be shortened by forming the front-end peeling region 50 with a small amount of peeling. In this way, by shortening the operation time of the formation operation of the front end peeling region 50 in which the peeling speed is the slowest in the peeling operation, the operation time of the entire peeling operation can be shortened to improve productivity.

Next, referring to FIG. 4 and FIG. 5 , the peeling action of the protective film will be described by using the film peeling device. 4 and 5 are explanatory views of the peeling operation of the protective film according to this embodiment.

As shown in FIG. 4A , when the wafer W is held on the holding table 11 , the outer peripheral edge of the wafer W is positioned directly below the pressing portion 32 of the peeling tape sticking means 31 . The peeling tape 54 is pulled out from a tape roll (not shown) above the wafer W, and the peeling tape 54 is held by a pair of holding rollers 22 in a state protruding in the pulling direction. In this initial state, the clamping means 25 is withdrawn from one end of the peeling adhesive film 54 . In addition, when ultraviolet rays are irradiated to the protective film 51 by an ultraviolet lamp (not shown), the adhesive layer of the protective film 51 hardens and the adhesive force decreases.

As shown in Figure 4B, one end of the peeling adhesive film 54 is clamped by the clamping means 25, and when the peeling adhesive film 54 is only pulled out to a predetermined length from a pair of holding rollers 22 in the pull-out direction, then clamping The adhesive film 54 is peeled off so that the abutting surface 33 of the pressing portion 32 faces the upper surface of the protective adhesive film 51 . Moreover, the pressing part 32 moves downward, and the peeling adhesive film 54 is pressed against the protective adhesive film 51 by the pressing part 32 in a heated state. At this time, since the abutting surface 33 is formed in a circular shape, the peeling adhesive film 54 is thermally pressed against the protective film 51 in a state where the arc shape of the outer edge of the abutting surface 33 is close to the outer peripheral edge of the wafer W.

As shown in FIG. 4C , when the peeling adhesive film 54 is pressed against the protective adhesive film 51 by the pressing portion 32 , the cutting portion 36 moves downward to cut the peeling adhesive film 54 . The peeling adhesive film 54 is cut and separated from the adhesive film roll to form a belt-shaped piece when the protective adhesive film 51 is peeled off by the peeling adhesive film 54 . As shown in FIG. 5A , the holding table 11 is moved by a predetermined amount relative to the clamping means 25 in the peeling direction by the moving means 37 (refer to FIG. The protective film 51 is peeled off. Thereby, the tip peeling region 50 is formed on the outer peripheral edge of the wafer W. As shown in FIG.

At this time, since the peeling adhesive film 54 is thermally pressed against the protective adhesive film 51 on the outer peripheral edge of the wafer W, the protective adhesive film 51 is easily peeled off from the wafer W. Therefore, the wafer W will not be damaged even if the peeling speed at the time of forming the tip peeling region 50 is increased. In addition, as described above, since the protective film 51 is peeled by gas jet, the amount of peeling at the time of formation of the tip peeling region 50 can be reduced. Thus, the peeling speed at the time of forming the distal peeling region 50 can be increased, the amount of peeling required for forming the distal peeling region 50 can be reduced, and the time for forming the distal peeling region 50 can be shortened.

As shown in FIG. 5B, while making the holding table 11 move in the peeling direction relative to the clamping means 25, gas is injected into the gas injection means 46 from the gas source 48, and the gas is injected into the gas injection means 46 from the gas injection port 47 toward the front end peeling area 50 instantaneously. injection. Gas is introduced from the front-end peeling area 50 between the wafer W and the protective adhesive film 51 , thereby partially peeling the protective adhesive film 51 from one side of the wafer W. Because one side of the wafer W is separated from the adhesive surface of the protective film 51 by gas, even if the protective film 51 is rolled up, the wafer W will not be lifted and damaged. And as shown in FIG. 5C , the protective adhesive film 51 is completely peeled off from the wafer W by passing the holding table 11 under the clamping means 25 .

At this time, since the stripping operation of the protective film 51 is assisted by gas injection, even if the stripping speed of the protective film 51 is increased, the wafer W will not be damaged. Therefore, the peeling speed from the formation of the front peeling region 50 to the peeling of the protective adhesive film 51 can be increased. In addition, as described above, since ionized air is sprayed as a gas, even if the peeling speed is increased, the device will not be electrostatically destroyed due to peeling electrification. Thereby, the peeling time for peeling the protective adhesive film 51 from the wafer W can be greatly shortened.

For example, when peeling the protective adhesive film 51 from a 12-inch wafer in the conventional peeling operation, first peel only 20 [mm] from the outer periphery of the wafer W at a peeling speed of 0.5 [mm/s]. A leading end peeling region 50 is formed. Afterwards, peel the protective adhesive film 51 from the front end peeling area 50 for 20 [mm] at a peeling speed of 3.0 [mm/s], and peel the protective adhesive film 51 at a peeling speed of 5.0 [mm/s] for the remaining 260 [mm]. peel off. In this way, in the conventional peeling operation of the protective adhesive film 51 , it takes 98 [sec] to peel the protective adhesive film 51 from the wafer W.

On the other hand, in the case of peeling the protective adhesive film 51 from a 12-inch wafer in the peeling operation of this embodiment, first, only 20 [mm] is peeled from the outer periphery of the wafer W at a peeling speed of 10.0 [mm/s]. To form the front end peeling region 50 . As described above, since the peeling adhesive film 54 is thermally pressed against the protective adhesive film 51 on the outer periphery of the wafer W, the peeling speed of the protective adhesive film 51 is greatly increased. In addition, since the gas jet is used, the amount of peeling at the time of forming the tip peeling region 50 is reduced to half. In this way, the travel time of the distal end peeling region 50 is greatly shortened by the synergistic effect of the shape of the contact surface of the pressing part 32 and the gas injection. After that, the protective adhesive film 51 was peeled off for 0.3 [mm] at a peeling speed of 0.1 [mm/s] as the gas injection waiting time. Thereafter, the protective adhesive film 51 was peeled to the remaining 290 [mm] at a peeling speed of 120 [mm/s]. In this way, the protective adhesive film 51 can be peeled from the wafer W in 6.4 [sec] in the peeling operation of the present embodiment.

As described above, according to the adhesive film peeling apparatus 1 of the present embodiment, the gas injection port 47 of the gas injection means 46 is directed toward the tip peeling area 50 where the protective adhesive film 51 is peeled off from the outer peripheral edge of the wafer. The peeling adhesive film 54 is clamped by the clamping means 25 to form the front peeling area 50. By injecting gas toward the center of the wafer W, the front peeling area 50 is between one side of the wafer W and the adhesive surface of the protective adhesive film 51. Gas is introduced, whereby a part of the protective film 51 is peeled off. Since an air layer is formed between one side of the wafer W and the adhesive surface of the protective film 51 , the wafer W will not be lifted as the protective film 51 is rolled up when the peeling starts. Therefore, the protective adhesive film 51 can be detached from the wafer W well in a short time without damaging the wafer W even if the peeling speed is increased.

In addition, although this Embodiment demonstrated the structure which peeled the protective adhesive film from the wafer before singulation as an example, it is not limited to this structure. As shown in FIG. 6A , the protective adhesive film 51 may also be peeled off from the wafer W after singulation. Elements are formed in each region of the wafer W divided by the planned dividing line, and are attached to the protective adhesive film 51 in a singulated state along the planned dividing line. In this case, the peeling adhesive film 54 sticks the protective adhesive film 51 from the wafer W in a peeling direction that is not parallel to the planned dividing line. In addition, the gas injection means 46 injects gas from a direction that is not parallel to the planned division line.

Since the dividing line crosses obliquely with respect to the peeling direction of the protective adhesive film 51, the protective adhesive film 51 is rolled up from the corner side of each element wafer C, and the protective adhesive film 51 is easily peeled off from the element wafer C. Therefore, the device wafer C is prevented from being lifted up with the roll-up of the protective adhesive film 51 . In addition, since the planned dividing line intersects obliquely with respect to the spraying direction of the gas injecting means 46, the gas becomes difficult to be released from the gap between the element wafers C (the planned dividing line), and between the element wafer C and the protective film 51 There is gas in between and the peeling becomes easy.

On the other hand, as shown in the comparative example of FIG. 6 , the peeling adhesive film 54 is stuck in the peeling direction parallel to the planned dividing line, and the gas injection means 46 injects gas from a direction parallel to the planned dividing line. Since the planned dividing line is parallel to the peeling direction of the protective film 51, the protective film 51 is rolled up from one side of the element wafer C intersecting the peeling direction, making it difficult to peel the protective film 51 from the element wafer C. In addition, since the planned division line is parallel to the injection direction of the gas injection means 46, the gap between the element wafers (the planned division line) will pass through the gas, and the gas will not enter between the element wafer C and the protective film 51. Difficult to peel off.

In addition, in this embodiment, the gas injection means only needs to be configured to inject gas from at least half of the wafer center from the peeling region at the tip. For example, the gas may be injected continuously or intermittently. Jet gas. When peeling off the protective film from the singulated wafer (see FIG. 6A ), the protective film can be peeled off from the element wafer while suppressing the movement of the element wafer by intermittently injecting gas. Furthermore, intermittent gas injection can also be realized by providing a mechanism for indirectly shielding continuous gas injection in the gas injection means.

In addition, in the present embodiment described above, although the gas injection means was described using an ion generator as an example, it is not limited to this configuration. The gas injection means is a means for injecting gas toward the exfoliation region at the tip, and is not limited to an ion generator that injects ionized air. In addition, the gas injection means is not limited to the structure which injects gas instantaneously or intermittently, and may inject gas continuously.

In addition, in the present embodiment described above, although the wafer is held on the holding surface of the holding table by sticking the adhesive film, it is not limited to this structure. For example, a plurality of jigs may be provided around the holding surface of the holding table, and the annular frame may be fixed by the jigs.

In addition, in the above-mentioned present embodiment, although the holding means makes the movable claw close to the fixed claw and holds the release adhesive film, it is not limited to this structure. The clamping means only needs to be configured to clamp one end of the peeling adhesive film. For example, a pair of movable claws may approach each other to fix the front end of the peeling adhesive film.

In addition, in the above-mentioned present embodiment, although the configuration in which the release adhesive film is mechanically cut by the cutting unit has been described, it is not limited to this configuration. The cutting part may be configured to cut the peelable adhesive film, for example, it may be configured to thermally cut with an electric heating wire.

In addition, in the above-mentioned present embodiment, although the structure in which the adhesive force of the protective film is lowered by irradiating ultraviolet rays to the protective film is described, it is not limited to this structure. The peeling operation of the protective film may be performed without reducing the adhesive force of the protective film. In addition, a thermosetting resin can also be used instead of the ultraviolet curing resin of the protective film. In this case, it is preferable to heat the protective film before peeling off the protective film.

In addition, in the above-mentioned present embodiment, although the structure in which the protective film is peeled off from the ground wafer by peeling the film is described, it is not limited to this structure. The peeling of the adhesive film is to peel off the protective adhesive film attached to the wafer, and is not limited to the peeling of the protective adhesive film of the wafer after grinding.

In addition, in the present embodiment described above, the moving means is configured to move the holding table relative to the clamping means to thereby peel the protective film from the wafer, but it is not limited to this configuration. The moving means may be configured to relatively move the holding means and the holding table to peel off the protective adhesive film from the wafer. For example, the moving means can also be configured to move the clamping means relative to the holding table, thereby peeling off the protective adhesive film from the wafer.

In addition, in the above-mentioned present embodiment, although the peeling tape sticking means is configured by heat-pressing the peeling tape to the protective tape, it is not limited to this configuration. The sticking means of the peeling film is sufficient as long as the peeling film can be pasted on the protective film, for example, the peeling film can also be pasted on the protective film through an adhesive.

In addition, various workpieces such as semiconductor substrates, inorganic material substrates, and packaging substrates can also be used as wafers. Various substrates such as silicon, gallium arsenide, gallium nitride, and silicon carbide can also be used as the semiconductor substrate. Various substrates such as sapphire, ceramics, and glass can also be used as the inorganic material substrate. The semiconductor substrate and the inorganic material substrate may or may not be formed with elements. Various substrates for CSP (Chip Size Package), SIP (System In Package), and FOWLP (Wafer Level Fan Out Package) can also be used as package substrates. The package substrate can also form a barrier with EMI (Electro Magnetic Interference; electromagnetic interference) countermeasures. In addition, lithium tantalate and lithium niobate after element formation or before element formation, or green ceramics and piezoelectric materials may be used as the wafer.

In addition, although the present embodiment and modifications have been described, all or partial combinations of the above-described embodiments and modifications can also be regarded as other embodiments of the present invention.

In addition, the embodiments of the present invention are not limited to the above-described embodiments or modified examples, and various changes, substitutions, and modifications are possible without departing from the technical idea of the present invention. Furthermore, due to technical progress and other derived technologies, if the technical idea of the present invention can be realized by other methods, it can also be implemented by other methods. Therefore, the scope of the patent application covers all the embodiments included in the scope of the technical idea of the present invention.

[industrial availability] As described above, the present invention has the effect of peeling off the protective film from the wafer well in a short time, and is particularly effective for a film peeling device that peels off the protective film from the wafer after grinding.

1‧‧‧Film peeling device 11‧‧‧Holding table 25‧‧‧Clamping means 31‧‧‧Peel-off adhesive film sticking means 32‧‧‧press part 37‧‧‧Means of mobility 46‧‧‧Gas injection means 47‧‧‧Gas injection port 50‧‧‧Front peeling area 51‧‧‧Protective film 52‧‧‧Pasting film W‧‧‧Wafer

Fig. 1 is a schematic diagram of the adhesive film peeling device of the present embodiment. Fig. 2 is a perspective view of the peeling adhesive film sticking means of this embodiment. FIG. 3 is an explanatory diagram of gas injection in the present embodiment. FIG. 4 is an explanatory diagram of the peeling operation of the protective film according to this embodiment. Fig. 5 is an explanatory diagram of the peeling operation of the protective film according to the present embodiment. Fig. 6 is an explanatory diagram of gas injection in a modified example.

11: Holding table

12: keep the surface

22: Hold the roller

25: clamping means

26: fixed claw

27: movable claw

31: Peel off the film sticking means

32: Pressing part

34: lifting means

35: heating means

36:Cutting part

37: Means of movement

39‧‧‧Pulling mechanism

46‧‧‧Gas injection means

47‧‧‧Gas injection port

48‧‧‧gas source

51‧‧‧Protective film

52‧‧‧Pasting film

54‧‧‧Peeling off the film

W‧‧‧Wafer

Claims (3)

An adhesive film peeling device, sticking a peeling adhesive film on a protective adhesive film attached to one side of a wafer, stretching the peeling adhesive film to peel the protective adhesive film from the wafer, is characterized in that it has: a holding table, a holding table The other side of the wafer; the peeling adhesive film sticking means, on the upper surface of the protective adhesive film of the wafer held by the holding table, the peeling adhesive film is pressed by the pressing part and pasted; the clamping means is clamped by One end of the peeling adhesive film pasted by the peeling adhesive film sticking means; the moving means moves the clamping means and the holding table relative to each other, stretches the peeling adhesive film from the outer side of the wafer toward the center, and peels the peeling adhesive film from the wafer Protective film; and gas injection means, facing the front end peeling area where the protective film is peeled off from the wafer by sticking the peeling film near the outer periphery of the wafer, the gas injection port is positioned and arranged on the wafer The gas is sprayed from the front end peeling area toward the center of the wafer; in the state where the clamping means clamps the peeling adhesive film, the gas injection from the front end peeling area by the gas injection means is carried out from the center of the wafer. The one side peels off a part of the protective adhesive film, and then stretches the peeling adhesive film to peel the protective adhesive film from the wafer, and the gas jet means is to peel at least half of the wafer center from the front end peeling area. , so that the gas is injected intermittently. The adhesive film peeling device described in Claim 1, wherein the wafer has a plurality of elements formed in the region divided by the planned dividing line, and is in a state of being divided and singulated along the planned dividing line Next, it is pasted on the protective adhesive film; the peeling adhesive film is pasted in a peeling direction that is not parallel to the planned dividing line; the gas injection means ejects gas that is not parallel to the planned dividing line. The adhesive film stripping device described in item 1 or item 2 of the scope of the patent application, wherein the gas injection means is an ion generator.

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