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TWI692545B - 形成高ｐ型摻雜鍺錫膜的方法以及包含該等膜的結構和裝置 - Google Patents

形成高ｐ型摻雜鍺錫膜的方法以及包含該等膜的結構和裝置 Download PDF

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TWI692545B
TWI692545B TW105119533A TW105119533A TWI692545B TW I692545 B TWI692545 B TW I692545B TW 105119533 A TW105119533 A TW 105119533A TW 105119533 A TW105119533 A TW 105119533A TW I692545 B TWI692545 B TW I692545B
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喬 馬各提斯
約翰 托勒
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荷蘭商Ａｓｍ智慧財產控股公司
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Abstract

揭示的是形成p型摻雜鍺錫層的方法、形成p型摻雜鍺錫層的系統、包含p型摻雜鍺錫層的結構。p型摻雜鍺錫層包含n型摻雜物，其允許比較高程度的錫和/或p型摻雜物包含到p型摻雜鍺錫層裡。

Description

形成高P型摻雜鍺錫膜的方法以及包含該等膜的結構和裝置
本揭示一般而言關於形成包含鍺錫之層的技術以及關於包含此種層的結構和裝置。更特別而言，本揭示關於形成p型摻雜鍺錫層的方法、形成包含該等層之結構和裝置的方法、用於形成該等層和結構的系統、包含該等層的結構和裝置。
多樣的電子裝置(例如半導體裝置)和光子裝置(例如雷射和太陽能裝置)可以包含或可以理想地包含鍺錫(GeSn)層，例如GeSn、GeSnSi、GeSnSiC和類似者。舉例而言，GeSn層可以用於形成直接能帶間隙裝置，以及/或者可以使用作為應力源(stressor)以在相鄰的鍺層中提供應變而增加鍺層中的移動性。類似而言，GeSnSi和/或GeSnSiC層可以用於形成可調整能帶間隙的裝置以及可調整光學性質的光學裝置。
於許多應用，可以想要在GeSn膜中包含比較大量的Sn以增加膜中的應變。增加應變舉例而言可以導致包含此種膜的裝置有較好的電子和/或電洞移動性。
也可以想要提供具有比較高程度之p型摻雜物(譬如硼)的GeSn膜，以形成具有比較低接觸電阻的GeSn膜。一般而言，p型摻雜物在 膜中的濃度愈高，則接觸電阻就愈低。
很不幸的，在p型摻雜GeSn膜的形成期間，p型摻雜物和Sn可以彼此競爭以包含在膜中。結果，隨著膜中之p型摻雜物的份量增加，可以包含在膜中的Sn份量便減少。類似而言，隨著膜中的Sn份量增加，可以包含在膜中之p型摻雜物的份量便減少。
據此，想要有形成GeSn膜的改良方法和系統，其可以允許膜中有比較高程度的Sn和/或p型摻雜物。附帶而言，想要具有比較高濃度之p型摻雜物和/或Sn的GeSn膜以及包含此種膜的結構和裝置。
本揭示之多樣的具體態樣關於形成p型摻雜GeSn膜的方法、包含p型摻雜GeSn膜的結構和裝置、用於形成膜的系統。在此所述的方法可以用於形成p型GeSn膜，其適合各式各樣的應用，包含在半導體和光子裝置中的膜。雖然下面更詳細討論本揭示之多樣具體態樣解決先前技藝的方法、膜、結構、裝置、系統之缺點的方式，不過一般而言，本揭示提供形成p型鍺錫層(譬如結晶)的方法，其能夠具有比較高的錫含量和比較高的p型摻雜物含量。此種膜特別是很適合想要有低歐姆接觸電阻的情形。
如在此所用，鍺錫(GeSn)層(在此也稱為膜)或包含鍺和錫的層是包含鍺和錫元素的層。該等層可以包含額外的元素，例如矽(譬如GeSnSi層)、碳(譬如GeSnSiC層)和/或其他元素。
依據本揭示的範例性具體態樣，形成覆蓋基板之p型摻雜GeSn層的方法包含以下步驟：提供具有反應腔室的氣相反應器；提供鍺前驅物給反應腔室；提供錫前驅物給反應腔室；提供p型摻雜前驅物給反應 腔室；以及提供n型摻雜物給反應腔室。多樣的前驅物可以從一或更多種前驅物來源所提供，並且不須全部都分開提供。本發明人訝異而未預期的發現：藉由在膜的形成過程期間添加n型摻雜物，則Sn和p型摻雜物的一或二者中之增加程度可以併入膜中。
範例性方法可以用於形成覆蓋基板之p型摻雜GeSn的磊晶層。於這些情形，反應腔室的溫度範圍可以從約200℃到約500℃、約250℃到約450℃、或約300℃到約420℃。在此步驟期間的範例性反應腔室壓力範圍從約1托耳到約760托耳、約10托耳到約760托耳、或約50托耳到約760托耳。依據這些具體態樣的多樣方面，方法包含以下步驟：在或靠近反應腔室的入口(譬如在反應器的入口或注射歧管)混合一或更多種前驅物。
範例性方法可以包含提供額外的前驅物(例如矽和/或碳前驅物)給反應腔室；此種額外的前驅物可以在或靠近反應腔室的入口而與一或更多種其他前驅物混合。
依據本揭示之多樣具體態樣的範例性方面，在p型摻雜GeSn膜的成長期間，p型摻雜前驅物之流速對n型摻雜前驅物之流速的比例範圍從約20到約1，約50到約1、或約100到約1。依據進一步方面，在p型摻雜GeSn膜的成長期間，p型摻雜前驅物之流速對錫前驅物之流速的比例範圍從約1到約1、約2到約1、或約3到約1。
使用在此揭示之方法所形成的範例性p型摻雜GeSn膜可以包含：大於5原子%、或約1原子%到約15原子%、或約5原子%或更多到約10原子%的Sn；每立方公分約1×1018到約1×1020個p型摻雜物，例如第13族元素；和/或每立方公分約1×1017到約5×1017個n型摻雜物，例如第15 族元素。GeSn膜也可以包含約0原子%到約35原子%的矽和/或約0原子%到約5原子%的碳。
依據本揭示的額外具體態樣，結構包含可以依據本揭示方法所形成的p型摻雜GeSn層(譬如結晶)。該結構舉例而言可以用於形成電子(譬如半導體)或光子(譬如太陽能或發光)裝置。依據這些具體態樣的多樣方面，併入p型摻雜GeSn層裡的錫份量可以是大於5原子%、或約1原子%到約15原子%、或約5原子%或更多到約10原子%的Sn。當p型摻雜GeSn層包含矽時，該層可以包含大於0原子%的矽、大於約1原子%的矽、約1原子%的矽到約35原子%的矽、約2原子%的矽到約16原子%的矽、或約4原子%的矽到約12原子%的矽。類似而言，p型摻雜GeSn膜可以包含大於0原子%的碳或大於約5原子%的碳。範例性p型摻雜GeSn膜也包含每立方公分約1×1018到約5×1019個p型摻雜物(例如第13族元素)和每立方公分約1×1017到約5×1017個n型摻雜物(例如第15族元素)。如下所詳列，範例性結構可以包含額外層，例如典型而言用於形成裝置的層。舉例而言，結構可以包含鍺層，其可以形成緩衝層和/或鰭層而作為鰭場效電晶體(FinFET)裝置的一部分。
依據本揭示之再額外的範例性具體態樣，裝置包含如在此所述的p型摻雜GeSn層，其可以如在此所述的形成。
同時，依據本揭示的又一額外範例性具體態樣，用於形成p型摻雜GeSn層的系統包含：氣相反應器，其包含反應腔室；鍺前驅物來源，其耦合於反應腔室；錫前驅物來源，其耦合於反應腔室；p型摻雜物來源，其耦合於反應腔室；以及n型摻雜物來源，其耦合於反應腔室。系統可以 建構成在或靠近反應腔室的入口(譬如在注射歧管)混合(譬如具有操作控制機制，其建構成造成混合)一或更多種前驅物。範例性系統適合形成如在此所述的p型摻雜GeSn結構以及/或者適合進行在此所述的範例性方法。
前面的發明內容和後面的實施方式都祇是範例性和解釋性的，並且不限制本揭示。
100‧‧‧系統
102‧‧‧基板操持系統
104‧‧‧反應器
106‧‧‧氣體分布系統
108‧‧‧壁
110‧‧‧排放來源
112‧‧‧第一氣體來源
114‧‧‧第二氣體來源
116‧‧‧第三氣體來源
118‧‧‧第四氣體來源
200‧‧‧本發明的方法
202~206‧‧‧本發明的方法步驟
300‧‧‧本發明的方法
302~310‧‧‧本發明的方法步驟
400‧‧‧結構
402‧‧‧基板
404‧‧‧緩衝層
406‧‧‧p型摻雜GeSn層
500‧‧‧結構
502‧‧‧基板
504‧‧‧絕緣層
506‧‧‧通孔
508‧‧‧緩衝層
510‧‧‧p型摻雜GeSn層
600‧‧‧結構
602‧‧‧基板
604‧‧‧緩衝層
606‧‧‧p型摻雜GeSn層
608‧‧‧鍺層
當考慮以下釋例性圖式來參照實施方式和申請專利範圍，則可以更完整了解本揭示的範例性具體態樣。
圖1示範依據本揭示的範例性具體態樣之形成p型摻雜GeSn層的系統。
圖2示範依據本揭示的進一步範例性具體態樣之形成p型摻雜GeSn層的方法。
圖3示範依據本揭示的具體態樣之形成p型摻雜GeSn層的另一範例性方法。
圖4示範依據本揭示的範例性具體態樣之結構。
圖5示範依據本揭示的範例性具體態樣之另一結構。
圖6示範根據本揭示的再額外範例性具體態樣之又一結構。
將體會圖中的元件是為了簡潔而示範，並且未必按照比例來繪製。舉例而言，圖中某些元件的尺度可以相對於其他元件而有所誇大，以幫助改善對本揭示所示範之具體態樣的了解。
下面提供的方法、系統、結構和裝置之範例性具體態樣的敘 述衹是範例性的，並且打算祇是為了釋例；以下敘述不打算限制本揭示或請求項的範圍。再者，引述具有所述特色的多重具體態樣並不打算排除具有額外特色的其他具體態樣或併入所述特色之不同組合的其他具體態樣。
依據本揭示的範例性方法關於形成覆蓋基板之p型摻雜GeSn(譬如結晶)層的方法。p型摻雜GeSn層可以包含額外的元素，例如矽和/或碳，其與p型摻雜GeSn層形成部分的晶格。如下所更詳列，p型摻雜GeSn層也包含n型摻雜物。包含n型摻雜物則允許增加膜中Sn和/或p型摻雜物的濃度。吾人認為n型摻雜物可以作為界面活性劑，並且在形成膜/層之時使Sn維持在定位。舉例來說，也包含n型摻雜物的p型摻雜GeSn層可以同時具有較高濃度的p型摻雜物和Sn；然而無n型摻雜物，則認為p型摻雜物和Sn彼此競爭要包含在晶格結構中，因此限制了各者在結晶層中的濃度。範例性p型摻雜GeSn膜舉例而言可以具有大於5原子%的Sn濃度和低於1毫歐姆的電阻率。
如在此所用，「基板」(substrate)是指上面具有可以沉積材料之表面的任何材料。基板可以包含整塊材料(譬如單晶矽、單晶鍺或其他半導體晶圓)，或者可以包含覆蓋整塊材料的一或更多層。進一步而言，基板可以包含多樣的拓樸，例如溝槽、通孔、線和類似者，其形成在基板之至少部分的層裡面或上面。範例性基板包含矽晶圓、包含鍺而覆蓋矽晶圓的一層、包含鍺矽錫而覆蓋矽晶圓的一層。
現在轉到圖式，圖1示範適合形成p型摻雜GeSn膜之範例性系統100的截面側視圖。系統100包含可選用的基板操持系統102、反應器104、氣體分布系統106、配置在反應器104和基板操持系統102之間的 可選用的壁108。系統100也包含第一氣體來源112、第二氣體來源114、第三氣體來源116、第四氣體來源118以及排放來源110。舉例來說，第一氣體來源112可以包含鍺前驅物，第二氣體來源114可以包含錫前驅物，第三氣體來源116可以包含p型摻雜前驅物，而第四氣體來源118可以包含n型摻雜前驅物。第一氣體來源112、第二氣體來源114、第三氣體來源116以及第四氣體來源118中的一或更多者也可以包含載體氣體(carrier gas)。附帶或替代而言，一或更多種前驅物可以在氣體分布系統106之前或當中與載體氣體混合。系統100也可以包含額外的前驅物來源(譬如矽和/或碳前驅物來源，其可以與載體氣體混合)、清洩氣體來源和/或載體氣體來源，其耦合於氣體分布系統106。適合作為載體和清洩氣體的範例性氣體包含氮、氬、氦和氫。
在系統100的操作期間，基板(未示範)譬如從基板操持系統102轉移到反應器104。一旦(多個)基板轉移到反應器104，則一或更多種氣體(例如前驅物、載體氣體和/或清洩氣體)經由氣體分布系統106而引入反應器104的反應腔室裡。
反應器104可以是單獨的反應器或是叢集工具的一部分。進一步而言，反應器104可以專屬於特殊的過程(例如沉積過程)，或者建構成進行多重過程。反應器104可以是單一基板的水平流動反應器，其能夠讓反應物以低停駐時間而層流於基板上方，這轉而有利於比較快速的依序基板處理。替代而言，反應器104可以是垂直流動反應器，其舉例而言具有一或更多種前驅物流動從蓮蓬頭冒出而實質往下流動到基板上。舉例來說，反應器104包含典型而言用於磊晶化學氣相沉積(chemical vapor deposition，CVD)處理的反應器，例如可得自ASM的Epsilon® 2000 Plus，其可以包含直接電漿和/或遠處電漿設備(未示範)，以及/或者包含多樣的加熱系統，例如輻射、感應和/或電阻式加熱系統(也未示範)。使用電漿可以提高一或更多種前驅物的反應性。適合系統100的範例性CVD反應器描述於2009年1月13日頒給Pomarede等人的美國專利第7,476,627號，其內容以不與本揭示衝突的程度下併於此以為參考。
來源112可以包含鍺烷(GeH4)、二鍺烷(Ge2H6)、三鍺烷(Ge3H8)、四鍺烷(Ge4H10)和/或其他的鍺鹵化物，並且可以可選用的包含一或更多種摻雜化合物，例如典型而言用於製造光子和/或半導體裝置的p型和/或n型化合物。如上所注意，來源112也可以包含載體氣體。
來源114可以包含適合提供錫給鍺錫層的任何化合物。範例性錫前驅物包含氯化錫(SnCl4)、氘化錫烷(SnD4)、甲基和/或鹵化物取代的錫烷，例如具有以下化學式的化合物：Sn(CH3)4-nXn，其中X是H、D(氘)、Cl或Br，而n是0、1、2或3；ZSn(CH3)3-nXn，其中Z是H或D，X是Cl或Br，而n是0、1或2；Z2Sn(CH3)2-nXn，其中Z是H或D，X是Cl或Br，而n是0或1；或者SnBr4。適合用於本揭示的某些範例性錫前驅物更詳細討論於2013年3月4日申請的美國專利申請案第13/783,762號，標題為用於氣相沉積的錫前驅物以及沉積過程，其內容以不與本揭示衝突的程度下併於此以為參考。
來源116、118可以包含適合的p型和n型摻雜前驅物。替代或附帶而言，來源112和/或114可以包含p型和/或n型摻雜前驅物。範例性p型摻雜前驅物包含二硼烷(B2H6)，並且範例性n型摻雜前驅物包含 胂(AsH3)、膦(PH3)和類似者。
可選用的額外前驅物來源當使用時可以包含額外元素或化合物的一或更多種前驅物，其舉例而言可以包含到沉積層的晶格裡。舉例而言，額外的前驅物來源可以包含矽前驅物(例如矽烷、二矽烷、三矽烷、四矽烷，新五矽烷、更高階矽烷)、碳前驅物(例如單甲基矽烷)和/或額外的摻雜物來源。
現在轉到圖2，示範的是形成覆蓋基板之p型摻雜GeSn層的範例性方法200。方法200包含以下步驟：在氣相反應器的反應腔室裡提供基板(步驟202)；提供前驅物給反應腔室(步驟204)；以及形成覆蓋基板的p型摻雜GeSn膜(步驟206)。
在步驟202期間，將基板(例如晶圓)載入氣相反應器(例如適合磊晶成長的CVD反應器)裡。反應器可以是單一基板的層流反應器，此種反應器例如可得自ASM的Epsilon® 2000 Plus的反應器系統。在步驟202期間，反應腔室可以帶到想要的操作溫度和壓力。反應腔室的操作溫度和壓力可以依據多樣的因素而變化。舉例而言，反應腔室可以建構成在靠近大氣壓力或在較低的壓力下操作。以特定的範例來說，在層形成步驟期間，反應器102的操作壓力範圍從約1托耳到約760托耳、約10托耳到約760托耳、或約50托耳到約760托耳。類似而言，反應器104的操作溫度範圍舉例而言可以從約200℃到約500℃、約250℃到約450℃、或約300℃到約420℃。
在步驟204期間，一或更多種前驅物提供給反應腔室。如上所注意，一或更多種前驅物可以衍生自共同的來源(譬如鍺前驅物也可以包 含n型和/或p型摻雜前驅物)。替代而言，每種前驅物可以由分開的來源所提供。舉例來說，在步驟204期間，鍺前驅物(例如二鍺烷)、錫前驅物(例如氯化錫)、p型摻雜前驅物(例如二硼烷)、n型摻雜物(例如膦)提供給反應腔室。一或更多種前驅物的流速可加以選擇以獲得如在此所列之想要濃度的Ge、Sn、p型摻雜物、n型摻雜物。進一步而言，在此步驟期間，額外的前驅物(例如矽和/或碳前驅物)可以提供給反應腔室。
在步驟204期間，一或更多種反應物可以在或靠近反應腔室的入口而混合，例如在氣體分布系統106，譬如是在氣體分布系統的注射歧管裡。
在步驟206，形成p型摻雜GeSn層(譬如p型摻雜GeSn結晶層)而覆蓋基板。在這步驟期間，可以有利的維持反應器條件以允許p型摻雜GeSn層的磊晶成長。
方法200也可以包含以下步驟：形成覆蓋基板的絕緣層，以及在絕緣層裡形成通孔。下面更詳細描述形成絕緣層和絕緣層裡之通孔的範例性技術。於這些情形，p型摻雜鍺錫層可以選擇性形成在基板上而在通孔裡。
圖3示範依據本揭示之額外具體態樣的另一方法300。方法300包含以下步驟：提供氣相反應器(步驟302)；在氣相反應器的反應腔室裡提供基板(步驟304)；以及在基板的表面上形成結晶p型摻雜GeSn層。
在步驟302期間，提供適合成長包含鍺錫之結晶層的反應器。反應器可以包含在此所述的任何反應器，例如水平流動磊晶CVD反應器。
在步驟304期間，在反應器的反應腔室裡提供基板。步驟304可以相同或類似於方法200的步驟202。
在步驟306，形成p型摻雜GeSn的結晶層。依據本揭示之範例性具體態樣的多樣方面，形成p型摻雜GeSn層的步驟包含：提供錫前驅物和鍺的體積比例為約0.001到約0.1、約0.005到約0.05、小於約0.1、或小於約0.05。附帶或替代而言，在p型摻雜GeSn膜的成長期間，p型摻雜前驅物之流速對n型摻雜前驅物之流速的範圍從約20到約1、約50到約1、或約100到約1。依據進一步方面，在p型摻雜GeSn膜的成長期間，p型摻雜前驅物之流速對錫前驅物之流速的比例範圍從約1到約1、約2到約1、或約3到約1。依據進一步方面，在形成p型摻雜結晶GeSn層的步驟期間，反應腔室的溫度範圍從約200℃到約500℃、約250℃到約450℃、或約300℃到約420℃。同時，依據再進一步方面，在形成包含鍺錫之層的步驟期間，反應腔室的壓力範圍從約1托耳到約760托耳、約10托耳到約760托耳、或約50托耳到約760托耳。
步驟306可以包含形成包含GeSnSi的層。於這些情形，矽前驅物可以額外提供給反應腔室。範例性矽來源前驅物包含二矽烷、三矽烷、四矽烷、新五矽烷、更高階矽烷化合物。類似而言，步驟306可以包含形成包含GeSnSiC的層。於這些情形，碳來源(例如包含單甲基矽烷的來源)可以額外提供給反應腔室。
方法300也可以包含可選用的步驟308和/或310：形成覆蓋基板的絕緣層(步驟308)和在絕緣層裡形成通孔。在步驟308期間，任何適合的絕緣層(例如氧化矽或氮化矽)可以沉積到基板上。然後，在步驟310 期間，一或更多個通孔可以形成在絕緣層裡。反應性離子蝕刻或其他適合的技術可以用於形成一或更多個通孔。在進行步驟308和310的情形下，在步驟306期間所形成的結晶層可以選擇性的在通孔裡形成。
使用方法200或方法300(譬如在步驟206或306期間)所形成的p型摻雜GeSn層可以包含：大於5原子%、或約1原子%到約15原子%、或約5原子%或更多到約10原子%的Sn；每立方公分約1×1018到約1×1020個p型摻雜物，例如第13族元素；和/或每立方公分約1×1017到約5×1017個n型摻雜物，例如第15族元素。
當p型摻雜GeSn層包含矽時，該層可以包含大於0原子%的矽、大於約1原子%矽、約1原子%的矽到約35原子%的矽、約2原子%的矽到約16原子%的矽、或約4原子%的矽到約12原子%的矽。類似而言，當p型摻雜GeSn層包含碳，該層可以包含大於0原子%的碳或大於約5原子%的碳。
現在轉到圖4~6，示範的是範例性結構400、500、600，其包含如在此所述的p型摻雜GeSn層。圖4示範結構400，其包含基板402、緩衝層404、p型摻雜GeSn層406。基板402可以包含任何適合的基板，例如矽基板，其可以具有形成其中和/或其上的一或更多層。緩衝層404可以包含一層鍺，其磊晶成長而覆蓋基板402。p型摻雜GeSn層406可以包含在此所述之任何的p型摻雜GeSn層，並且舉例而言可以根據在此揭示的方法而形成。
依據本揭示之額外範例的結構可以包含額外層，譬如在層404之下和/或在層406之上。舉例來說，結構可以包含覆蓋層406的鍺層。
現在轉到圖5，結構500包含基板502、絕緣層504、形成在層504裡的通孔506、緩衝(譬如鍺)層508、p型摻雜GeSn層510。層508和510磊晶形成而覆蓋基板502，並且可以選擇性的形成在通孔606裡，譬如使用方法200或方法300來為之。
圖6示範依據本揭示之額外具體態樣的又一結構600。結構600包含基板602、緩衝層604(譬如鍺緩衝層)、p型摻雜GeSn層606、鍺層608。雖然未示範，但是一或更多層704~708可以形成在絕緣材料的通孔裡，如上面關於圖5所述。
要了解在此所述的組態和/或做法本質上是範例性的，並且這些特定的具體態樣或範例不是要視為有限制的意味。在範例性方法的情形下，在此所述的特定常規或步驟可以代表任何數目之處理策略中的一或更多者。因此，示範的多樣動作可以採取示範的順序來進行、以其他的順序來進行、同時的進行、或於某些情形下有所省略。
本揭示的主題包含在此揭示之多樣過程、層、系統、組態和其他特色、功能、動作和/或性質的所有新穎和非顯而易知的組合和次組合以及其任何和所有的等同者。
100‧‧‧系統
102‧‧‧基板操持系統
104‧‧‧反應器
106‧‧‧氣體分布系統
108‧‧‧壁
110‧‧‧排放來源
112‧‧‧第一氣體來源
114‧‧‧第二氣體來源
116‧‧‧第三氣體來源
118‧‧‧第四氣體來源

Claims (20)

  1. 一種形成p型摻雜鍺錫層的方法，該方法包含以下步驟：在反應器的反應腔室裡提供基板；提供用以形成該p型摻雜鍺錫層的一或更多種前驅物給該反應腔室；以及使用該一或更多種前驅物，在該反應腔室裡之基板的表面上形成該p型摻雜鍺錫層，其中該p型摻雜鍺錫層包含n型摻雜物。
  2. 如申請專利範圍第1項的方法，其進一步包含以下步驟：在該反應腔室的入口混合p型摻雜前驅物和n型摻雜前驅物。
  3. 如申請專利範圍第1項的方法，其中提供一或更多種前驅物給該反應腔室的該步驟包含：提供鍺前驅物給該反應腔室；提供錫前驅物給該反應腔室；提供p型摻雜前驅物給該反應腔室；以及提供n型摻雜前驅物給該反應腔室。
  4. 根據申請專利範圍第1到3項中任一項的方法，其進一步包含以下步驟：提供矽前驅物給該反應腔室。
  5. 如申請專利範圍第4項的方法，其中該p型摻雜鍺錫層包含矽。
  6. 根據申請專利範圍第1到3項中任一項的方法，其中在該p型摻雜鍺錫層的成長期間，p型摻雜前驅物之流速對n型摻雜前驅物之流速的比例範圍從約100到約1。
  7. 根據申請專利範圍第1至3項中任一項的方法，其中p型摻雜前驅物之流速和錫前驅物之流速的比例範圍從約3到約1。
  8. 根據申請專利範圍第1至3項中任一項的方法，其中提供一或更多種前驅物給該反應腔室的該步驟包含：提供碳前驅物給該反應腔室。
  9. 一種結構，其包含：基板；以及p型摻雜GeSn層，其覆蓋該基板，該p型摻雜GeSn膜包含n型摻雜物。
  10. 如申請專利範圍第9項的結構，其中該p型摻雜GeSn層包含從每立方公分約1×1018到約1×1020個p型摻雜物。
  11. 如申請專利範圍第10項的結構，其中該p型摻雜GeSn層包含從每立方公分約1×1017到約5×1017個n型摻雜物。
  12. 如申請專利範圍第9項的結構，其中該p型摻雜物包含第13族元素。
  13. 如申請專利範圍第9項的結構，其中該p型摻雜物包含硼。
  14. 如申請專利範圍第9項的結構，其中該n型摻雜物包含第15族元素。
  15. 如申請專利範圍第9項的結構，其中該n型摻雜物包含磷。
  16. 如申請專利範圍第9至15項中任一項的結構，其中該p型摻雜GeSn層進一步包含矽。
  17. 如申請專利範圍第9至15項中任一項的結構，其中該p型摻雜GeSn層進一步包含碳。
  18. 如申請專利範圍第9至15項中任一項的結構，其中該p型摻雜GeSn層形成部分的鰭場效電晶體(FinFET)裝置。
  19. 一種用於形成p型摻雜GeSn層的系統，該系統包含： 氣相反應器，其包含反應腔室；鍺前驅物來源，其耦合於該反應腔室；錫前驅物來源，其耦合於該反應腔室；p型摻雜前驅物來源，其耦合於該反應腔室；以及n型摻雜前驅物來源，其耦合於該反應腔室，其中該系統建構成供應鍺前驅物、錫前驅物、p型摻雜前驅物以及n型摻雜前驅物給該反應腔室，以形成包含n型摻雜物的p型摻雜GeSn層。
  20. 如申請專利範圍第19項的系統，其中該鍺前驅物、該錫前驅物、該p型摻雜前驅物以及該n型摻雜前驅物在靠近該反應腔室的入口混合。
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