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TWI561010B - Level shift driver circuit - Google Patents

Level shift driver circuit

Info

Publication number
TWI561010B
TWI561010B TW104120280A TW104120280A TWI561010B TW I561010 B TWI561010 B TW I561010B TW 104120280 A TW104120280 A TW 104120280A TW 104120280 A TW104120280 A TW 104120280A TW I561010 B TWI561010 B TW I561010B
Authority
TW
Taiwan
Prior art keywords
driver circuit
level shift
shift driver
level
circuit
Prior art date
Application number
TW104120280A
Other languages
English (en)
Other versions
TW201603489A (zh
Inventor
Po-Hao Huang
Original Assignee
Ememory Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ememory Technology Inc filed Critical Ememory Technology Inc
Publication of TW201603489A publication Critical patent/TW201603489A/zh
Application granted granted Critical
Publication of TWI561010B publication Critical patent/TWI561010B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/04—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/146—Write once memory, i.e. allowing changing of memory content by writing additional bits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356182—Bistable circuits using complementary field-effect transistors with additional means for controlling the main nodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10W20/43—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H10W20/491—
TW104120280A 2014-07-08 2015-06-24 Level shift driver circuit TWI561010B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201462022166P 2014-07-08 2014-07-08

Publications (2)

Publication Number Publication Date
TW201603489A TW201603489A (zh) 2016-01-16
TWI561010B true TWI561010B (en) 2016-12-01

Family

ID=52015968

Family Applications (4)

Application Number Title Priority Date Filing Date
TW104108332A TWI553645B (zh) 2014-07-08 2015-03-16 非揮發性記憶體及其行解碼器
TW104108466A TWI578326B (zh) 2014-07-08 2015-03-17 一次編程的記憶胞及其陣列結構與操作方法
TW104119498A TWI576965B (zh) 2014-07-08 2015-06-17 可高度微縮的單層多晶矽非揮發性記憶胞
TW104120280A TWI561010B (en) 2014-07-08 2015-06-24 Level shift driver circuit

Family Applications Before (3)

Application Number Title Priority Date Filing Date
TW104108332A TWI553645B (zh) 2014-07-08 2015-03-16 非揮發性記憶體及其行解碼器
TW104108466A TWI578326B (zh) 2014-07-08 2015-03-17 一次編程的記憶胞及其陣列結構與操作方法
TW104119498A TWI576965B (zh) 2014-07-08 2015-06-17 可高度微縮的單層多晶矽非揮發性記憶胞

Country Status (5)

Country Link
US (4) US9431111B2 (zh)
EP (2) EP2966685B1 (zh)
JP (2) JP6181037B2 (zh)
CN (3) CN105321570B (zh)
TW (4) TWI553645B (zh)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9214933B2 (en) 2014-02-25 2015-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Input/output circuit
US9508396B2 (en) * 2014-04-02 2016-11-29 Ememory Technology Inc. Array structure of single-ploy nonvolatile memory
US10109364B2 (en) * 2015-10-21 2018-10-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Non-volatile memory cell having multiple signal pathways to provide access to an antifuse of the memory cell
US10014066B2 (en) 2015-11-30 2018-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-fuse cell structure including reading and programming devices with different gate dielectric thickness
US9613714B1 (en) * 2016-01-19 2017-04-04 Ememory Technology Inc. One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method
US9847133B2 (en) * 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation
JP6200983B2 (ja) * 2016-01-25 2017-09-20 力旺電子股▲ふん▼有限公司ｅＭｅｍｏｒｙ Ｔｅｃｈｎｏｌｏｇｙ Ｉｎｃ． ワンタイムプログラマブルメモリセル、該メモリセルを含むメモリアレイのプログラム方法及び読み込み方法
KR102359372B1 (ko) * 2016-02-17 2022-02-09 에스케이하이닉스 주식회사 싱글-폴리 불휘발성 메모리 셀
US10115682B2 (en) * 2016-04-13 2018-10-30 Ememory Technology Inc. Erasable programmable non-volatile memory
US9633734B1 (en) * 2016-07-14 2017-04-25 Ememory Technology Inc. Driving circuit for non-volatile memory
US9647660B1 (en) * 2016-08-05 2017-05-09 Arm Limited Apparatus and method for universal high range level shifting
US9921598B1 (en) * 2017-01-03 2018-03-20 Stmicroelectronics S.R.L. Analog boost circuit for fast recovery of mirrored current
US10158354B2 (en) * 2017-02-10 2018-12-18 Silicon Laboratories Inc. Apparatus with electronic circuitry having reduced leakage current and associated methods
TWI618074B (zh) * 2017-03-06 2018-03-11 力旺電子股份有限公司 一次編程非揮發性記憶體及其讀取感測方法
US10090309B1 (en) 2017-04-27 2018-10-02 Ememory Technology Inc. Nonvolatile memory cell capable of improving program performance
US10360958B2 (en) * 2017-06-08 2019-07-23 International Business Machines Corporation Dual power rail cascode driver
TWI629684B (zh) * 2017-07-28 2018-07-11 華邦電子股份有限公司 記憶體裝置的行解碼器
US11087207B2 (en) * 2018-03-14 2021-08-10 Silicon Storage Technology, Inc. Decoders for analog neural memory in deep learning artificial neural network
JP7245171B2 (ja) * 2017-12-20 2023-03-23 タワー パートナーズ セミコンダクター株式会社 半導体装置及びその動作方法
US11245004B2 (en) 2019-12-11 2022-02-08 Ememory Technology Inc. Memory cell with isolated well region and associated non-volatile memory
CN112992213B (zh) * 2019-12-16 2023-09-22 上海磁宇信息科技有限公司 存储器的列译码器
US11663455B2 (en) * 2020-02-12 2023-05-30 Ememory Technology Inc. Resistive random-access memory cell and associated cell array structure
TWI707350B (zh) * 2020-02-13 2020-10-11 大陸商北京集創北方科技股份有限公司 一次性編程唯讀記憶體之操作方法、處理器晶片及資訊處理裝置
CN111276485A (zh) * 2020-02-14 2020-06-12 上海华虹宏力半导体制造有限公司 Mtp器件的制造方法及mtp器件
CN111900172B (zh) * 2020-07-29 2022-10-25 杰华特微电子股份有限公司 多次可编程存储单元及存储装置
CN111968975A (zh) * 2020-08-07 2020-11-20 长江存储科技有限责任公司 电路芯片、三维存储器以及制备三维存储器的方法
US11557338B2 (en) * 2020-10-13 2023-01-17 Ememory Technology Inc. Non-volatile memory with multi-level cell array and associated program control method
KR102876139B1 (ko) * 2021-05-20 2025-10-27 삼성전자주식회사 오티피 메모리 장치 및 오티피 메모리 장치의 동작 방법
CN115581068A (zh) * 2021-07-06 2023-01-06 成都锐成芯微科技股份有限公司 反熔丝型一次编程的非易失性存储单元及其存储器
CN115910143B (zh) * 2021-08-20 2024-06-21 长鑫存储技术有限公司 驱动电路、存储设备及驱动电路控制方法
CN115910144B (zh) * 2021-08-20 2024-06-21 长鑫存储技术有限公司 驱动电路、存储设备及驱动电路控制方法
EP4303921A4 (en) 2022-05-25 2024-01-10 Changxin Memory Technologies, Inc. ANTI-MEL BOND STRUCTURE, ANTI-MEL BOND ARRANGEMENT AND MEMORY
US20250105173A1 (en) * 2023-09-21 2025-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. One-time-programmable memory devices and methods of manufacturing thereof
CN118553294B (zh) * 2024-07-30 2025-03-14 四川凯路威科技有限公司 全共字线otp存储器电路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6801064B1 (en) * 2002-08-27 2004-10-05 Cypress Semiconductor, Corp Buffer circuit using low voltage transistors and level shifters
US20050007149A1 (en) * 1999-05-12 2005-01-13 Telefonaktiebolaget Lm Ericsson (Publ) Cascode signal driver with low harmonic content
US7183817B2 (en) * 2005-06-29 2007-02-27 Freescale Semiconductor, Inc. High speed output buffer with AC-coupled level shift and DC level detection and correction
US7554361B2 (en) * 2004-07-16 2009-06-30 Samsung Electronics Co., Ltd. Level shifter and method thereof

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6240698A (ja) 1985-08-16 1987-02-21 Fujitsu Ltd 半導体記憶装置
JPH0721790A (ja) * 1993-07-05 1995-01-24 Mitsubishi Electric Corp 半導体集積回路
JP3173247B2 (ja) 1993-09-29 2001-06-04 ソニー株式会社 レベルシフタ
US5469384A (en) * 1994-09-27 1995-11-21 Cypress Semiconductor Corp. Decoding scheme for reliable multi bit hot electron programming
US5717635A (en) * 1996-08-27 1998-02-10 International Business Machines Corporation High density EEPROM for solid state file
US6137723A (en) * 1998-04-01 2000-10-24 National Semiconductor Corporation Memory device having erasable Frohmann-Bentchkowsky EPROM cells that use a well-to-floating gate coupled voltage during erasure
JP3560480B2 (ja) * 1998-10-05 2004-09-02 シャープ株式会社 スタティック・ランダム・アクセスメモリ
US6841821B2 (en) * 1999-10-07 2005-01-11 Monolithic System Technology, Inc. Non-volatile memory cell fabricated with slight modification to a conventional logic process and methods of operating same
WO2003025944A1 (en) 2001-09-18 2003-03-27 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
US6798693B2 (en) 2001-09-18 2004-09-28 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
US6621745B1 (en) * 2002-06-18 2003-09-16 Atmel Corporation Row decoder circuit for use in programming a memory device
US6649453B1 (en) 2002-08-29 2003-11-18 Micron Technology, Inc. Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation
US20050030827A1 (en) * 2002-09-16 2005-02-10 Impinj, Inc., A Delaware Corporation PMOS memory cell
JP2004260242A (ja) * 2003-02-24 2004-09-16 Toshiba Corp 電圧レベルシフタ
JP4331966B2 (ja) * 2003-04-14 2009-09-16 株式会社ルネサステクノロジ 半導体集積回路
US7087953B2 (en) * 2004-12-03 2006-08-08 Aplus Flash Technology, Inc. Unified non-volatile memory device and method for integrating NOR and NAND-type flash memory and EEPROM device on a single substrate
JP4547313B2 (ja) * 2005-08-01 2010-09-22 株式会社日立製作所 半導体記憶装置
KR100801059B1 (ko) 2006-08-02 2008-02-04 삼성전자주식회사 누설 전류를 감소시키기 위한 반도체 메모리 장치의드라이버 회로
CN100517653C (zh) * 2006-12-08 2009-07-22 中芯国际集成电路制造(上海)有限公司 用于dram单元和外围晶体管的方法及所产生的结构
CN101047381B (zh) * 2007-04-02 2010-04-14 威盛电子股份有限公司 电压电平转换电路、方法及初始电压提供的方法
TWI430275B (zh) * 2008-04-16 2014-03-11 Magnachip Semiconductor Ltd 用於程式化非揮發性記憶體裝置之方法
US7768865B2 (en) 2008-04-21 2010-08-03 Vikram Bollu Address decoder and/or access line driver and method for memory devices
ITTO20080647A1 (it) 2008-08-29 2010-02-28 St Microelectronics Srl Decodificatore di colonna per dispositivi di memoria non volatili, in particolare del tipo a cambiamento di fase
US7830721B2 (en) * 2008-09-29 2010-11-09 Macronix International Co., Ltd Memory and reading method thereof
US7876612B2 (en) 2008-10-08 2011-01-25 Nanya Technology Corp. Method for reducing leakage current of a memory and related device
US7989875B2 (en) 2008-11-24 2011-08-02 Nxp B.V. BiCMOS integration of multiple-times-programmable non-volatile memories
CN101887756A (zh) * 2009-05-12 2010-11-17 杭州士兰集成电路有限公司 一次性可编程单元和阵列及其编程和读取方法
JP2011009454A (ja) 2009-06-25 2011-01-13 Renesas Electronics Corp 半導体装置
US9013910B2 (en) * 2009-07-30 2015-04-21 Ememory Technology Inc. Antifuse OTP memory cell with performance improvement prevention and operating method of memory
JP2011130162A (ja) * 2009-12-17 2011-06-30 Elpida Memory Inc 半導体装置
US8441299B2 (en) * 2010-01-28 2013-05-14 Peregrine Semiconductor Corporation Dual path level shifter
US8330189B2 (en) * 2010-06-21 2012-12-11 Kilopass Technology, Inc. One-time programmable memory and method for making the same
JP5596467B2 (ja) * 2010-08-19 2014-09-24 ルネサスエレクトロニクス株式会社 半導体装置及びメモリ装置への書込方法
US8339831B2 (en) 2010-10-07 2012-12-25 Ememory Technology Inc. Single polysilicon non-volatile memory
KR101787758B1 (ko) * 2011-06-09 2017-10-19 매그나칩 반도체 유한회사 레벨 쉬프터
ITTO20120192A1 (it) * 2012-03-05 2013-09-06 St Microelectronics Srl Architettura e metodo di decodifica per dispositivi di memoria non volatile a cambiamento di fase
US8779520B2 (en) * 2012-03-08 2014-07-15 Ememory Technology Inc. Erasable programmable single-ploy nonvolatile memory
JP2013187534A (ja) 2012-03-08 2013-09-19 Ememory Technology Inc 消去可能プログラマブル単一ポリ不揮発性メモリ
US8658495B2 (en) * 2012-03-08 2014-02-25 Ememory Technology Inc. Method of fabricating erasable programmable single-poly nonvolatile memory
US8941167B2 (en) * 2012-03-08 2015-01-27 Ememory Technology Inc. Erasable programmable single-ploy nonvolatile memory
EP2639817A1 (en) * 2012-03-12 2013-09-18 eMemory Technology Inc. Method of fabricating a single-poly floating-gate memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050007149A1 (en) * 1999-05-12 2005-01-13 Telefonaktiebolaget Lm Ericsson (Publ) Cascode signal driver with low harmonic content
US6801064B1 (en) * 2002-08-27 2004-10-05 Cypress Semiconductor, Corp Buffer circuit using low voltage transistors and level shifters
US7554361B2 (en) * 2004-07-16 2009-06-30 Samsung Electronics Co., Ltd. Level shifter and method thereof
US7183817B2 (en) * 2005-06-29 2007-02-27 Freescale Semiconductor, Inc. High speed output buffer with AC-coupled level shift and DC level detection and correction

Also Published As

Publication number Publication date
CN105321570A (zh) 2016-02-10
EP2966686A1 (en) 2016-01-13
CN105244352A (zh) 2016-01-13
TWI578326B (zh) 2017-04-11
CN105262474A (zh) 2016-01-20
TW201603199A (zh) 2016-01-16
US9640262B2 (en) 2017-05-02
JP6181037B2 (ja) 2017-08-16
CN105262474B (zh) 2018-05-25
US9431111B2 (en) 2016-08-30
JP2016018992A (ja) 2016-02-01
US20160013193A1 (en) 2016-01-14
US9548122B2 (en) 2017-01-17
TW201603033A (zh) 2016-01-16
TWI576965B (zh) 2017-04-01
TW201603489A (zh) 2016-01-16
US9312009B2 (en) 2016-04-12
CN105321570B (zh) 2019-06-21
CN105244352B (zh) 2018-07-27
JP2016018987A (ja) 2016-02-01
US20160013199A1 (en) 2016-01-14
EP2966685B1 (en) 2020-02-19
EP2966685A1 (en) 2016-01-13
JP6092315B2 (ja) 2017-03-08
TW201603025A (zh) 2016-01-16
TWI553645B (zh) 2016-10-11
CN105280644A (zh) 2016-01-27
EP2966686B1 (en) 2020-12-23
US20160012894A1 (en) 2016-01-14
US20160013776A1 (en) 2016-01-14

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