TWI396265B - Chip package structure and method thereof - Google Patents
Chip package structure and method thereof Download PDFInfo
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- TWI396265B TWI396265B TW098124543A TW98124543A TWI396265B TW I396265 B TWI396265 B TW I396265B TW 098124543 A TW098124543 A TW 098124543A TW 98124543 A TW98124543 A TW 98124543A TW I396265 B TWI396265 B TW I396265B
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Description
本發明係有關封裝技術,特別是一種晶片封裝結構及其方法。The present invention relates to packaging techniques, and more particularly to a wafer package structure and method therefor.
由於使用者對於高速化、多功能化、高容量化與輕、薄、短、小的要求,使得半導體元件的構裝密度越來越高。一般而言,基本的晶片封裝結構至少包括:一基板;至少一晶片設置於其上並與基板電性連接;以及一封裝材料覆蓋晶片、電性連接結構與部分基板。於封裝領域,如何減少製程步驟、降低成本與提高封裝積集度是一個無止盡的目標與重要的課題。Due to the high speed, multi-function, high capacity, and light, thin, short, and small requirements of the user, the mounting density of the semiconductor element is becoming higher and higher. In general, the basic chip package structure includes at least: a substrate; at least one wafer is disposed thereon and electrically connected to the substrate; and a packaging material covers the wafer, the electrical connection structure and a portion of the substrate. In the field of packaging, how to reduce process steps, reduce costs and improve package integration is an endless goal and an important issue.
為了解決上述問題,本發明目的之一係提供一種晶片封裝結構及其方法,藉由使用膠膜取代原有基板與封裝材料來封裝整個封裝體。In order to solve the above problems, an object of the present invention is to provide a chip package structure and method thereof, which package an entire package by using a film instead of the original substrate and the package material.
本發明目的之一係提供一種晶片封裝結構及其方法,藉由膠膜將晶片密封於兩片膠膜,其封裝方法簡單且能有效避免外來物影響晶片。One of the objects of the present invention is to provide a chip package structure and a method thereof for sealing a wafer to two films by a film, which is simple in packaging method and can effectively prevent foreign matter from affecting the wafer.
為了達到上述目的,本發明一實施例之一種晶片封裝結構,係包括:一第一膠膜,係具有複數個內接點於一上表面與複數個外接點於一下表面,其中內接點與外接點係電性連接;至少一晶片,係設置於第一膠膜之上表面並與內接點電性連接;一第二膠膜,係覆蓋於晶片上並與第一膠膜形成一封閉空間容置晶片;以及複數個導電焊球,係設置於外接點上。In order to achieve the above object, a chip package structure according to an embodiment of the present invention includes: a first adhesive film having a plurality of inner contacts on an upper surface and a plurality of external contacts on a lower surface, wherein the inner contacts are The external contacts are electrically connected; at least one wafer is disposed on the upper surface of the first adhesive film and electrically connected to the inner contact; a second adhesive film covers the wafer and forms a closed film with the first adhesive film The space accommodates the wafer; and the plurality of conductive solder balls are disposed on the external contacts.
本發明另一實施例之一種晶片封裝方法,係包括下列步驟:提供一第一膠膜,其中第一膠膜係具有複數個內接點於一上表面與複數個外接點於一下表面,且內接點與外接點係電性連接;設置至少一晶片於第一膠膜之上表面並使晶片與內接點電性連接;設置複數個導電焊球於外接點上;設置一第二膠膜於晶片上;以及利用一沖壓步驟移除多餘第一膠膜與第二膠膜並使第一膠膜與第二膠膜連接形成一封閉空間以容置晶片。A chip packaging method according to another embodiment of the present invention includes the following steps: providing a first film, wherein the first film has a plurality of inner contacts on an upper surface and a plurality of external contacts on the lower surface, and The inner contact is electrically connected to the external contact; at least one wafer is disposed on the upper surface of the first adhesive film and the wafer is electrically connected to the inner contact; a plurality of conductive solder balls are disposed on the external contact; and a second adhesive is disposed The film is on the wafer; and the excess first film and the second film are removed by a stamping step and the first film is joined to the second film to form a closed space to accommodate the wafer.
請參照圖1E,於本實施例中,晶片封裝結構包括:一第一膠膜10;至少一晶片20;一第二膠膜40;以及複數個導電焊球30。第一膠膜10具有複數個內接點12於一上表面與複數個外接點14於一下表面,其中內接點12與外接點14係電性連接。晶片20係設置於第一膠膜10之上表面並與內接點12電性連接。第二膠膜40係覆蓋於晶片20上並與第一膠膜10形成一封閉空間容置晶片20。導電焊球30係設置於外接點14上。Referring to FIG. 1E, in the embodiment, the chip package structure includes: a first film 10; at least one wafer 20; a second film 40; and a plurality of conductive solder balls 30. The first adhesive film 10 has a plurality of inner contacts 12 on an upper surface and a plurality of external contacts 14 on the lower surface, wherein the inner contacts 12 and the external contacts 14 are electrically connected. The wafer 20 is disposed on the upper surface of the first adhesive film 10 and electrically connected to the inner contact 12 . The second adhesive film 40 covers the wafer 20 and forms a closed space accommodating wafer 20 with the first adhesive film 10. The conductive solder balls 30 are disposed on the external contacts 14.
於一實施例中,內接點12與外接點14可利用第一膠膜內10之金屬線路(圖上未示)互相電性連接。於一實施例中,晶片20具有複數個銅凸塊(圖上未示)與內接點12電性連接。於一實施例中,晶片封裝結構可設置複數個晶片20。於一實施例中,晶片20可互相堆疊設置,如圖2所示。於一實施例中,晶片20亦可並排設置(圖上未示)。In one embodiment, the inner contact 12 and the outer contact 14 are electrically connected to each other by a metal line (not shown) of the first adhesive film 10. In one embodiment, the wafer 20 has a plurality of copper bumps (not shown) electrically connected to the inner contacts 12. In one embodiment, the wafer package structure can be provided with a plurality of wafers 20. In one embodiment, the wafers 20 can be stacked one on another as shown in FIG. In one embodiment, the wafers 20 can also be arranged side by side (not shown).
請參照圖1A、圖1B、圖1C、圖1D與圖1E,於本實施例中晶片封裝方法包括下列步驟。如圖1A所示,提供一第一膠膜10,其中第一膠膜10係具有複數個內接點12於一上表面與複數個外接點14於一下表面,且內接點12與外接點14係電性連接。設置至少一晶片20於第一膠膜10之上表面並使晶片20與內接點12電性連接,如圖1B所示。晶片20可利用複數個銅凸塊(圖上未示)與內接點12電性連接。參照圖1C,設置複數個導電焊球30於外接點14上。設置一第二膠膜40於晶片20上並利用一沖壓步驟移除多餘第一膠膜10與第二膠膜40。使第一膠膜10與第二膠膜40連接形成一封閉空間以容置晶片20,如圖1D與圖1E所示。Referring to FIG. 1A, FIG. 1B, FIG. 1C, FIG. 1D and FIG. 1E, the wafer packaging method in the embodiment includes the following steps. As shown in FIG. 1A, a first film 10 is provided, wherein the first film 10 has a plurality of inner contacts 12 on an upper surface and a plurality of external contacts 14 on the lower surface, and the inner contacts 12 and the external contacts 14 series electrical connection. At least one wafer 20 is disposed on the upper surface of the first adhesive film 10 and electrically connects the wafer 20 to the internal contacts 12, as shown in FIG. 1B. The wafer 20 can be electrically connected to the inner contact 12 by a plurality of copper bumps (not shown). Referring to FIG. 1C, a plurality of conductive solder balls 30 are disposed on the external contacts 14. A second film 40 is disposed on the wafer 20 and the excess first film 10 and the second film 40 are removed by a stamping step. The first film 10 is joined to the second film 40 to form a closed space for accommodating the wafer 20, as shown in FIGS. 1D and 1E.
於一實施例中,沖壓步驟時更可同時提供一加熱步驟幫助第一膠膜10與第二膠膜40連接。於不同實施例中,複數個晶片20互相堆疊設置(如圖2所示)或並排設置。於一實施例中,堆疊之晶片20可利用矽穿孔(through-silicon via,TSV)技術電性連接。In an embodiment, a heating step may be simultaneously provided to assist the first film 10 to be connected to the second film 40. In various embodiments, a plurality of wafers 20 are stacked one on another (as shown in Figure 2) or side by side. In one embodiment, the stacked wafers 20 can be electrically connected using a through-silicon via (TSV) technique.
本發明藉由膠膜當作整個封裝技術的核心,並利用重壓(punch)的方式結合與分段。本發明膠膜之使用可利用既有的捲帶技術。覆蓋於晶片上之膠膜是否有黏牢非主要要求,僅需隔絕外來物即可。若需避免膠膜在熱脹冷縮環境下變化過大,可於膠膜內增加細微的小孔減少膨脹的現象產生以避免膠膜撐破。The invention adopts a film as the core of the whole packaging technology, and combines and segments by means of a punch. The use of the film of the present invention utilizes existing tape winding techniques. Whether the film covering the wafer is sticky is not a major requirement, and it is only necessary to isolate the foreign matter. If it is necessary to avoid excessive change of the film in the thermal expansion and contraction environment, it is possible to increase the fine pores in the film to reduce the expansion phenomenon to avoid the film breakage.
綜合上述,本發明藉由使用膠膜取代原有基板與封裝材料來封裝整個封裝體;藉由膠膜將晶片密封於兩片膠膜內,其封裝方法簡單且能有效避免外來物影響晶片。In summary, the present invention encapsulates the entire package by replacing the original substrate and the packaging material with a film; sealing the wafer into the two films by the film, the packaging method is simple and can effectively prevent foreign matter from affecting the wafer.
以上所述之實施例僅係為說明本發明之技術思想及特點,其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施,當不能以之限定本發明之專利範圍,即大凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵蓋在本發明之專利範圍內。The embodiments described above are merely illustrative of the technical spirit and the features of the present invention, and the objects of the present invention can be understood by those skilled in the art, and the scope of the present invention cannot be limited thereto. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention.
10...第一膠膜10. . . First film
12...內接點12. . . Internal point
14...外接點14. . . External point
20...晶片20. . . Wafer
30...導電焊球30. . . Conductive solder ball
40...第二膠膜40. . . Second film
圖1A、圖1B、圖1C、圖1D與圖1E所示為根據本發明一實施例之示意圖。1A, 1B, 1C, 1D and 1E are schematic views showing an embodiment of the present invention.
圖2所示為根據本發明一實施例之示意圖。2 is a schematic view of an embodiment of the invention.
10...第一膠膜10. . . First film
12...內接點12. . . Internal point
14...外接點14. . . External point
20...晶片20. . . Wafer
30...導電焊球30. . . Conductive solder ball
40...第二膠膜40. . . Second film
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098124543A TWI396265B (en) | 2009-07-21 | 2009-07-21 | Chip package structure and method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| TW098124543A TWI396265B (en) | 2009-07-21 | 2009-07-21 | Chip package structure and method thereof |
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| TW201104801A TW201104801A (en) | 2011-02-01 |
| TWI396265B true TWI396265B (en) | 2013-05-11 |
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| TW098124543A TWI396265B (en) | 2009-07-21 | 2009-07-21 | Chip package structure and method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW432564B (en) * | 1998-12-14 | 2001-05-01 | Vanguard Int Semiconduct Corp | Package structure of flexible substrate |
| TW200731484A (en) * | 2005-10-13 | 2007-08-16 | Intel Corp | Integrated micro-channels for 3D through silicon architectures |
| TW200744171A (en) * | 2006-05-24 | 2007-12-01 | Powertech Technology Inc | Semiconductor package and its fabricating process |
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- 2009-07-21 TW TW098124543A patent/TWI396265B/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW432564B (en) * | 1998-12-14 | 2001-05-01 | Vanguard Int Semiconduct Corp | Package structure of flexible substrate |
| TW200731484A (en) * | 2005-10-13 | 2007-08-16 | Intel Corp | Integrated micro-channels for 3D through silicon architectures |
| TW200744171A (en) * | 2006-05-24 | 2007-12-01 | Powertech Technology Inc | Semiconductor package and its fabricating process |
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| TW201104801A (en) | 2011-02-01 |
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