TWI388023B - An optical detecting device and a detecting method using the same - Google Patents

Description

Optical detecting device and detecting method using the same

The invention relates to optical detection technology, and in particular to an optical parameter measurement device and method for a semiconductor light-emitting component.

The optical parameter measurement of a general light source is performed by using a Light Integrating Sphere with a detector. The integrating sphere has a sphere with an input aperture and an output aperture, and the inner wall of the sphere is uniformly coated with a high reflectivity. The barium sulfate coating, the detector is placed in the output hole. Therefore, when the light emitted by the light source to be tested is incident on the integrating sphere from the input hole, it will be uniformly reflected and diffused inside the integrating sphere, so that the intensity of the light output by the light source can be accurately measured by the detector. , illuminance and other light parameters.

A light-parameter measuring device and method for a conventional semiconductor light-emitting device, as disclosed in US Pat. No. 6,734,959, a semiconductor light-emitting device is placed on a carrier, and an integrating sphere is aligned above the semiconductor light-emitting device. After the two probes electrically illuminate each of the light-emitting units on the semiconductor light-emitting element, a part of the light emitted from the light-emitting unit is collected by the integrating sphere to perform optical parameter measurement.

In fact, the semiconductor light-emitting elements are mostly 360-degree light-emitting. However, due to the presence of the probe, the semiconductor light-emitting elements cannot be placed in the integrating sphere for complete light collection. In the conventional optical detecting device, the outer peripheral edge of the input hole of the integrating sphere and the light receiving angle formed by the center of the semiconductor light emitting element are only 12° to 120°, in other words, the conventional optical detecting device root. The light outside the above-mentioned light-receiving angle cannot be collected, and only the light emitted from the top of the semiconductor light-emitting element can be measured, and the light emitted from the bottom of the semiconductor light-emitting element can not be measured at all, and the accuracy of the measurement is greatly reduced.

In addition, limited by the process yield of the semiconductor light-emitting device, the light shapes of different light-emitting elements are not the same, the ratio of the top and bottom light-emitting is also different, and the packaged finished product will be applied to the light emitted from the bottom, so If the light emitted from the bottom of the semiconductor light-emitting element cannot be included in the measurement range, the error in the measurement of various optical parameters will cause great trouble to the quality control of the operator.

An object of the present invention is to provide an optical detecting device and a detecting method using the same, which can simultaneously collect and measure the light emitted from the top and the bottom of the semiconductor light emitting element, thereby improving the accuracy of the measurement.

Another object of the present invention is to provide an optical detecting apparatus and a detecting method using the same, which are only slightly modified with respect to the original detecting apparatus, and the conversion cost is low.

In order to achieve the foregoing object, the present invention provides an optical detecting apparatus for measuring optical parameters of a semiconductor light emitting element, comprising a carrier for carrying at least one semiconductor light emitting element, and an optical detecting device characterized in that the optical detecting device is characterized in that The carrier is further provided with a reflecting means corresponding to the top surface of the bottom of the semiconductor light emitting element.

The invention also provides an optical for measuring the optical parameters of a semiconductor light-emitting component The detecting method comprises the steps of: placing at least one semiconductor light emitting element on a top surface of a carrier, and providing a reflecting device on a top surface of the carrier; aligning an optical detecting device with the semiconductor light emitting device; and starting the optical Detecting the semiconductor light-emitting element to which the device is directed, and at the same time, the reflecting device reflects or scatters the bottom light of the semiconductor light-emitting element and partially targets the optical detecting device, and then performs light with the optical detecting device. Parameter measurement.

Therefore, the present invention only needs to provide a reflecting device on the carrier of the original detecting device, and the reflecting device is used to reflect or scatter the light emitted from the bottom of the semiconductor light emitting device, thereby improving the accuracy of the measurement and the conversion cost is low, thereby The object of the invention is achieved.

The reflective device may be a composite structure composed of barium sulfate, distributed Bragg reflectors (DBR), a metal reflective layer, or a metal reflective layer and a light transmissive layer and a protective layer.

In order to better understand the features of the present invention, the following description of the preferred embodiments and the accompanying drawings are as follows, wherein: FIG. 1 is a schematic diagram of the apparatus used in the preferred embodiment of the present invention; The cross-sectional view of the carrier in the embodiment; the third figure is a schematic diagram of the carrier of the first embodiment of the present invention directly carrying a semiconductor light-emitting component; 4 is a cross-sectional view of a carrier in a second embodiment of the present invention; a fifth view is a cross-sectional view of a carrier in a third embodiment of the present invention; and a sixth is a cross-sectional view of the carrier in the fourth embodiment of the present invention.

Referring to the first figure, an optical detecting device provided by the present invention includes an optical detecting device 20 and a carrier 30. The carrier 30 can be used to carry at least one semiconductor light emitting element 50, and the carrier 30 is further provided with a reflecting device 31 corresponding to the top surface of the bottom of the semiconductor light emitting device, and the optical detecting device 20 is located at the semiconductor light emitting device. The optical detecting device 20 includes two probes 21, an integrating sphere 22 and a detector 23. The integrating sphere defines an input hole 221, and the detector has an input hole 221. 23 is mounted on one side of the integrating sphere with respect to the input hole 221, and the detector 23 may be a detector such as an optical power meter or a photo Detector. It should be noted that, in the present invention, the optical detecting device 20 does not have to include the integrating sphere 22. Since the detailed structure and working principle of the optical detecting device 20 are conventional technologies, they are not described herein.

The first embodiment of the present invention is provided with reference to the second figure. The top surface of the carrier 30 is provided with a reflecting device 31 for reflecting the light emitted from the bottom of the semiconductor light emitting element 50 to be directed to the optical detecting device 20 The amount of light collected by the integrating sphere 22 is increased to improve the accuracy of the optical parameter measurement. In this embodiment, the reflecting device 31 is a distributed Bragg Reflector (DBR), which is a multi-layer film material composed of different optical media, thereby providing a high-quality reflection effect.

In addition, the reflective device 31 of the foregoing embodiment may also use a metal reflective layer instead. (Metallic Reflector).

In addition, the embodiment further includes a film 40 made of a light-transmitting material, the film having a transmittance of at least 40% or more; in the embodiment, the transmittance is 80%. And the adhesive film 40 has adhesiveness on one side, and can be used for adhering and fixing one or more semiconductor light emitting elements 50, and then the semiconductor light emitting element 50 and the adhesive film 40 are placed together on the top surface of the carrier 30; however, the carrier 30 can also directly carry a wafer containing a plurality of semiconductor light-emitting elements, the wafer having a plurality of light-emitting units 51 (ie, semiconductor light-emitting elements to be cut), as shown in the third figure, in this case This film 40 is not required to be used.

Referring to the fourth figure, the top surface of the carrier 30 of the second embodiment of the present invention is also provided with a reflecting device 31. The main difference is that the reflecting device 31 is composed of a metal reflective layer 32 and above the metal reflective layer 32. A light transmissive layer 33 is formed in common.

In this embodiment, the light transmissive layer 33 is made of glass, quartz, or polyethylene terephthalate (PET), polyvinyl chloride (PolyVinyl Chloride, PVC), ethylene-vinyl acetate copolymer ( Ethylene Vinyl Acetate, EVA) is made of light-transmissive multi-molecular materials. The metal reflective layer 32 is made of a metal having a high light transmittance such as aluminum (Al), silver (Ag), chromium (Cr), or rhenium (Rh), and the metal reflective layer 32 can be plated or splashed. Physical or chemical methods such as plating and evaporation are directly formed on the top surface of the carrier 30, and covered by the light-transmitting layer 33, thereby avoiding oxidation, vulcanization and reflectance of the metal reflective layer 32 due to contact with air. The problem of falling.

Alternatively, the metal reflective layer 32 may be formed by electroplating or physical or chemical methods such as sputtering or vapor deposition on one side of the light transmissive layer 33, and then the light transmissive layer 33 and the metal reflective layer 32 may be covered together. The top surface of the carrier 30.

Referring to the fifth figure, the top surface of the carrier 30 provided by the third embodiment of the present invention is also provided with a reflecting device 31, and the reflecting device 31 is a light transmissive layer 33 and a metal reflection from top to bottom. The layer 32 and a protective layer 34 are also made of a metal having a high light transmittance, and the protective layer is made of titanium (Ti), gold (Au), platinum (Pt), tungsten (W). ), cerium oxide (SiO ₂ ) or cerium nitride (Si ₃ N ₄ ), which is generally used for forming a dielectric protective layer.

It is worth mentioning that the manufacturing process of the reflecting device 31 in the embodiment first forms the metal reflective layer 32 on the surface of the light transmissive layer 33, and then is electroplated, or physical or chemical such as sputtering or evaporation. The protective layer 34 is formed on the surface of the metal reflective layer 32 to prevent oxidation of the metal reflective layer 32. After the reflective device 31 is completed, it is placed on the surface of the carrier 30 to reflect the light emitted from the bottom of the semiconductor light emitting device 50.

In addition, referring to the sixth figure, the top surface of the carrier 30 provided by the fourth embodiment of the present invention further has a recess 35 for receiving and positioning a reflecting device 31, and the reflecting device 31 is fabricated. The process is as described in the previous paragraph.

For the first to fourth embodiments, the present invention can be used to detect a plurality of light emitting units 51 on a semiconductor light emitting device 50 and a semiconductor light emitting device, or a film 40 and at least one semiconductor light emitting device 50. The position bearing the corresponding reflection device 31 can also achieve the purpose and predetermined efficacy of the invention.

The invention further provides an optical detecting method using the optical detecting device 10, the steps comprising: a) placing at least one semiconductor light emitting element 50 on the reflecting device 31 of the carrier 30; b) integrating the optical detecting device 20 The input hole 221 of the ball 22 is aligned with the semiconductor light emitting element 50; c) the second light emitting element 50 is electrically connected to the semiconductor light emitting element 50, and at this time, the semiconductor light emitting element 50 will be illuminated while being The top and bottom emit light, and the reflecting means 31 located at the bottom of the semiconductor light emitting element 50 will receive the light from the bottom of the semiconductor light emitting element 50 and reflect it so as to travel toward the integrating sphere 22 of the optical detecting device 20, and then The detector 23 of the optical detecting device 20 performs optical parameter measurement on the collected light.

In summary, the present invention provides a highly reflective reflective device on the carrier, so that the light emitted from the bottom of the semiconductor light emitting device can be effectively reflected upward, so that the optical detecting device can collect the bottom portion of the semiconductor light emitting device. The light, in turn, improves the accuracy of the measurement of various optical parameters, and does not require replacement of the original detection equipment, but only requires a small improvement, and the conversion cost is low.

10‧‧‧Optical testing equipment

20‧‧‧Optical detection device

21‧‧‧ probe

22‧‧·score ball

221‧‧‧ input hole

23‧‧‧Detector

30‧‧‧Hosting

31‧‧‧Reflecting device

32‧‧‧Metal reflector

33‧‧‧Transparent layer

34‧‧‧Protective layer

35‧‧‧ Groove

40‧‧‧ film

50‧‧‧Semiconductor light-emitting components

51‧‧‧Lighting unit

1 is a schematic view of a device used in a preferred embodiment of the present invention; a second view is a cross-sectional view of a carrier in a first embodiment of the present invention; and a third embodiment is a carrier directly carrying a semiconductor light emitting device in the first embodiment of the present invention. 4 is a cross-sectional view of a carrier in a second embodiment of the present invention; a fifth view is a cross-sectional view of a carrier in a third embodiment of the present invention; and a sixth embodiment is a carrier in the fourth embodiment of the present invention. Cutaway view.

10‧‧‧Optical testing equipment

20‧‧‧Optical detection device

21‧‧‧ probe

22‧‧·score ball

221‧‧‧ input hole

23‧‧‧Detector

30‧‧‧Hosting

31‧‧‧Reflecting device

50‧‧‧Semiconductor light-emitting components

Claims (28)

An optical detecting device for measuring optical parameters of a semiconductor light emitting device, comprising: a carrier for carrying at least one semiconductor light emitting device; and an optical detecting device, wherein the optical detecting device is characterized in that: the bearing A reflecting means is further disposed on the top surface of the bottom of the semiconductor light emitting element. The optical detecting device of claim 1, wherein the reflecting device is a distributed Bragg Reflectors. The optical detecting device of claim 1, wherein the reflecting device is a barium sulfate reflective layer. The optical detecting device of claim 1, wherein the reflecting device is a metal reflective layer. The optical detecting apparatus of claim 4, wherein the metal reflective layer is made of one of aluminum (Al), silver (Ag), chromium (Cr), and rhodium (Rh). The optical detecting device of claim 4, wherein the reflecting device further has a light transmitting layer located on a side of the metal reflective layer away from the carrier. The optical detecting apparatus according to claim 6, wherein the light transmissive layer is made of one of glass, quartz, polyethylene terephthalate, polyvinyl chloride, and ethylene-vinyl acetate copolymer. The optical detecting apparatus of claim 4 or 5, wherein the metal reflective layer is formed by electroplating or physical vapor deposition. The optical detecting device of claim 4 or 5, wherein the metal reflective layer is formed by a chemical vapor deposition method. The optical detecting device of claim 4 or 6, wherein the counter The radiation device further has a protective layer between the metal reflective layer and the carrier. The optical detecting apparatus according to claim 10, wherein the protective layer is made of titanium (Ti), gold (Au), platinum (Pt), tungsten (W), hafnium oxide (SiO ₂ ), and tantalum nitride (Si). ₃ N ₄ ) Made of one of them. The optical detecting apparatus of claim 11, wherein the protective layer is formed by electroplating or physical vapor deposition. The optical detecting apparatus of claim 11, wherein the protective layer is formed by a chemical vapor deposition method. The optical detecting device of claim 1, wherein the semiconductor light emitting device is adhered to a film and placed on the carrier, and the film has a transmittance of 40% or more. The optical detecting device of claim 14, wherein the film has a transmittance of 80% or more. An optical detecting method for measuring optical parameters of a semiconductor light emitting device, the method comprising: placing at least one semiconductor light emitting device on a top surface of a carrier, and a top surface of the carrier is provided with a reflecting device; The detecting device is aligned with the semiconductor light emitting device; the semiconductor light emitting device is aligned with the optical detecting device, and the reflecting device reflects or scatters the bottom light of the semiconductor light emitting device to partially face the optical detecting device Then, the optical parameter measurement is performed by the optical detecting device. The optical detection method of claim 16, wherein the reflective device The system is a Distributed Bragg Reflectors. The optical detection method of claim 16, wherein the reflecting device is a barium sulfate reflective layer. The optical detection method of claim 16, wherein the reflecting device is a metal reflective layer. The optical detecting method according to claim 19, wherein the metal reflective layer is made of one of aluminum (Al), silver (Ag), chromium (Cr), and rhodium (Rh). The optical detection method of claim 19, wherein the reflecting device further has a light transmissive layer on a side of the metal reflective layer away from the carrier. The optical detecting method according to claim 21, wherein the light transmissive layer is made of one of glass, quartz, polyethylene terephthalate, polyvinyl chloride, and ethylene-vinyl acetate copolymer. The optical detecting method of claim 19 or 21, wherein the reflecting device further has a protective layer between the metal reflective layer and the carrier. The optical detecting method according to claim 23, wherein the protective layer is made of titanium (Ti), gold (Au), platinum (Pt), tungsten (W), cerium oxide (SiO ₂ ), and tantalum nitride (Si). ₃ N ₄ ) Made of one of them. The optical detecting method of claim 16, wherein the optical detecting device comprises an integrating sphere and a detector for collecting and measuring the light collected by the integrating sphere. The optical detection method of claim 16, wherein the optical detecting device further comprises two probes for activating the semiconductor light emitting element to emit light. The optical detection method of claim 16, wherein the semiconductor light-emitting element is adhered to a film and placed on the carrier, and the film has a transmittance of 40% or more. The optical detection method according to claim 27, wherein the film has a transmittance of 80% or more.