TWI479131B - Testing apparatus for light emitting diodes - Google Patents
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- TWI479131B TWI479131B TW103118120A TW103118120A TWI479131B TW I479131 B TWI479131 B TW I479131B TW 103118120 A TW103118120 A TW 103118120A TW 103118120 A TW103118120 A TW 103118120A TW I479131 B TWI479131 B TW I479131B
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- 239000000523 sample Substances 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims 1
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- 238000005259 measurement Methods 0.000 description 7
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- 230000000903 blocking effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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Description
本發明是有關於一種發光二極體之量測裝置，特別是有關於一種量測覆晶式發光二極體的發光二極體之量測裝置。The invention relates to a measuring device for a light-emitting diode, in particular to a measuring device for measuring a light-emitting diode of a flip-chip light-emitting diode.
發光二極體為由半導體材料製成的發光元件。因具有壽命長、安全性高、低功率、體積小、環保等優點，因此發光二極體逐漸成為照明燈具的主流趨勢。The light emitting diode is a light emitting element made of a semiconductor material. Because of its long life, high safety, low power, small size, and environmental protection, the LED has gradually become the mainstream trend of lighting fixtures.
發光二極體需經過測試後才能進行實際應用。其測試流程為將載有發光二極體晶片之晶圓展開後承載於量測裝置上，接著以探針接觸電極使發光二極體發光，而後利用光檢測器量測其光強度。The LEDs need to be tested before they can be used in practice. The test procedure is that the wafer carrying the LED chip is unfolded and carried on the measuring device, and then the LED is illuminated by the probe contact electrode, and then the light intensity is measured by the photodetector.
一般而言，光檢測器必須將待量測之發光二極體罩住，以收集到待量測之發光二極體的完整光強度。然而對於覆晶式發光二極體而言，因其發光面與電極不在同一平面，因此無法適用於現今水平式與垂直式發光二極體的量測系統，必須另外設計專用於覆晶式發光二極體的量測設備。In general, the photodetector must cover the light-emitting diode to be measured to collect the complete light intensity of the light-emitting diode to be measured. However, for the flip-chip light-emitting diode, since the light-emitting surface and the electrode are not in the same plane, it is not suitable for the measurement system of the current horizontal and vertical light-emitting diodes, and must be specially designed for flip-chip illumination. A measuring device for a diode.
本發明提供一種發光二極體之量測裝置，用於量測複數個覆晶式發光二極體。覆晶式發光二極體之間皆具有一間隙。發光二極體之量測裝置包含晶片膜、光檢測裝置與遮光元件。晶片膜承載覆晶式發光二極體。光檢測裝置設置於晶片膜相對覆晶式發光二極體之一側。光檢測裝置具有收光口。遮光元件設置於收光口。遮光元件具有透光區與遮光區，遮光區環繞透光區。透光區之面積可涵蓋單一覆晶式發光二極體與間隙之部分範圍。The invention provides a measuring device for a light emitting diode for measuring a plurality of flip chip light emitting diodes. There is a gap between the flip-chip light-emitting diodes. The measuring device of the light emitting diode includes a wafer film, a light detecting device, and a light blocking member. The wafer film carries a flip-chip light emitting diode. The photodetecting device is disposed on one side of the wafer film opposite to the flip-chip light emitting diode. The light detecting device has a light collecting port. The shading element is disposed at the light collecting port. The shading element has a light transmitting area and a light shielding area, and the light shielding area surrounds the light transmission area. The area of the light-transmissive region may cover a portion of a single flip-chip light-emitting diode and a portion of the gap.
在一或多個實施方式中，遮光元件為板材，且透光區為開口。In one or more embodiments, the shading element is a sheet material and the light transmissive area is an opening.
在一或多個實施方式中，開口之內壁越靠近光檢測裝置其口徑越大。In one or more embodiments, the closer the inner wall of the opening is to the photodetecting device, the larger its aperture.
在一或多個實施方式中，遮光元件更包含反射層，形成於開口之內壁。In one or more embodiments, the shading element further comprises a reflective layer formed on the inner wall of the opening.
在一或多個實施方式中，遮光元件包含透明載體與遮光層。遮光層形成於透明載體相對光檢測裝置之表面。遮光層僅位於遮光區中。In one or more embodiments, the shading element comprises a transparent carrier and a light shielding layer. A light shielding layer is formed on the surface of the transparent carrier opposite to the light detecting device. The light shielding layer is only located in the light shielding area.
在一或多個實施方式中，光檢測裝置為積分球。In one or more embodiments, the light detecting device is an integrating sphere.
在一或多個實施方式中，光檢測裝置包含反射腔與光偵測器。反射腔具有收光口，光偵測器設置於反射腔中。In one or more embodiments, the light detecting device includes a reflective cavity and a photodetector. The reflective cavity has a light collecting port, and the photodetector is disposed in the reflective cavity.
在一或多個實施方式中，光檢測裝置包含反射腔與太陽能板。反射腔具有收光口，太陽能板設置於反射腔中。In one or more embodiments, the light detecting device includes a reflective cavity and a solar panel. The reflective cavity has a light collecting opening, and the solar panel is disposed in the reflective cavity.
在一或多個實施方式中，量測裝置更包含探針組，設置於覆晶式發光二極體相對光檢測裝置之一側。In one or more embodiments, the measuring device further includes a probe set disposed on one side of the flip-chip light emitting diode relative to the light detecting device.
在一或多個實施方式中，當探針組接觸覆晶式發光二極體時，遮光元件支撐晶片膜使探針組與覆晶式發光二極體電性連接。In one or more embodiments, when the probe set contacts the flip-chip light-emitting diode, the light-shielding element supports the wafer film to electrically connect the probe set to the flip-chip light-emitting diode.
本實施方式之發光二極體之量測裝置能夠快速且精確地量測每一覆晶式發光二極體。僅有待量測之覆晶式發光二極體所發出的光能夠通過透光區而進入光檢測裝置，至於周遭的覆晶式發光二極體所發出的光則會被遮光元件之遮光區擋住。如此一來，光檢測裝置即能夠準確地量到單顆覆晶式發光二極體的光強度。The measuring device of the light-emitting diode of the present embodiment can measure each flip-chip light-emitting diode quickly and accurately. Only the light emitted by the flip-chip light-emitting diode to be measured can enter the light detecting device through the light-transmitting region, and the light emitted by the surrounding flip-chip light-emitting diode is blocked by the light-shielding region of the light-shielding member. In this way, the light detecting device can accurately measure the light intensity of the single flip-chip light-emitting diode.
100‧‧‧晶片膜100‧‧‧ wafer film
200‧‧‧光檢測裝置200‧‧‧Light detection device
202‧‧‧收光口202‧‧‧Lighting port
205‧‧‧光度計205‧‧‧photometer
210‧‧‧反射腔210‧‧‧Reflection chamber
220‧‧‧光偵測器220‧‧‧Photodetector
300‧‧‧遮光元件300‧‧‧ shading elements
302‧‧‧透光區302‧‧‧Light transmission area
304‧‧‧遮光區304‧‧‧ shading area
310‧‧‧板材310‧‧‧ plates
312‧‧‧開口312‧‧‧ openings
313‧‧‧內壁313‧‧‧ inner wall
320‧‧‧反射層320‧‧‧reflective layer
330‧‧‧透明載體330‧‧‧Transparent carrier
332‧‧‧表面332‧‧‧ surface
340‧‧‧遮光層340‧‧‧Lighting layer
400‧‧‧探針組400‧‧‧ probe set
900‧‧‧覆晶式發光二極體900‧‧‧Flip-chip light-emitting diode
910‧‧‧間隙910‧‧‧ gap
H‧‧‧橫向H‧‧‧ Landscape
P‧‧‧區域P‧‧‧ area
V‧‧‧縱向V‧‧‧ portrait
W1、W2、W3‧‧‧寬度W1, W2, W3‧‧‧ width
第1圖為本發明一實施方式之發光二極體之量測裝置的側視圖。Fig. 1 is a side view of a measuring device for a light-emitting diode according to an embodiment of the present invention.
第2A圖為第1圖之區域P之一實施方式的局部放大圖。Fig. 2A is a partially enlarged view showing an embodiment of a region P of Fig. 1.
第2B圖為第1圖之區域P之另一實施方式的局部放大圖。Fig. 2B is a partial enlarged view of another embodiment of the region P of Fig. 1.
第3圖為本發明另一實施方式之發光二極體之量測裝置的側視圖。Fig. 3 is a side view showing the measuring device of the light-emitting diode according to another embodiment of the present invention.
第4圖為本發明再一實施方式之量測裝置的側視圖。Figure 4 is a side view of a measuring device according to still another embodiment of the present invention.
以下將以圖式揭露本發明的複數個實施方式，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施方式中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。The embodiments of the present invention are disclosed in the following drawings, and for the purpose of clarity However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings.
請一併參照第1圖與第2A圖，其中第1圖為本發明一實施方式之發光二極體之量測裝置的側視圖，第2A圖為第1圖之區域P之一實施方式的局部放大圖。如圖所示，發光二極體之量測裝置用於量測複數個覆晶式發光二極體900。覆晶式發光二極體900之間皆具有一間隙910。發光二極體之量測裝置包含晶片膜100、光檢測裝置200與遮光元件300。晶片膜100承載覆晶式發光二極體900。光檢測裝置200設置於晶片膜100相對覆晶式發光二極體900之一側。光檢測裝置200具有收光口202。遮光元件300設置於收光口202。遮光元件300具有透光區302與遮光區304，遮光區304環繞透光區302。透光區302之面積可涵蓋單一覆晶式發光二極體900與間隙910之部分範圍。其中覆晶式發光二極體900能夠以透明膠帶或透明膠體(未繪示)固定於晶片膜100上。Referring to FIG. 1 and FIG. 2A together, FIG. 1 is a side view of a measuring device for a light-emitting diode according to an embodiment of the present invention, and FIG. 2A is an embodiment of a region P of FIG. Partially enlarged view. As shown, the measuring device of the light emitting diode is used to measure a plurality of flip-chip light emitting diodes 900. The flip-chip LEDs 900 have a gap 910 therebetween. The measuring device of the light emitting diode includes the wafer film 100, the light detecting device 200, and the light blocking member 300. The wafer film 100 carries a flip-chip light emitting diode 900. The photodetecting device 200 is disposed on one side of the wafer film 100 with respect to the flip-chip light emitting diode 900. The light detecting device 200 has a light collecting port 202. The light shielding element 300 is disposed at the light collection port 202. The light shielding member 300 has a light transmitting region 302 and a light shielding region 304, and the light shielding region 304 surrounds the light transmitting region 302. The area of the light transmissive region 302 may cover a portion of the single flip-chip light emitting diode 900 and the gap 910. The flip-chip LED 900 can be fixed on the wafer film 100 by a transparent tape or a transparent colloid (not shown).
簡言之，本實施方式之發光二極體之量測裝置能夠快速且精確地量測每一覆晶式發光二極體900。詳細而言，在進行單顆覆晶式發光二極體900的量測時，覆晶式發光 二極體900會朝晶片膜100發光，其中晶片膜100例如為透明材質，讓光束得以穿透。然而如第1圖所繪示，其發出的部分光束可能會激發周遭的覆晶式發光二極體900，使得其他覆晶式發光二極體900亦發光。不過在本實施方式中，透光區302之面積涵蓋單一覆晶式發光二極體900與間隙910之部分範圍(舉例而言，以第2A圖來看，若覆晶式發光二極體900具有寬度W1，而間隙910具有寬度W2=0.2W1，則透光區302的寬度W3可取1.1W1，然而本發明不以此為限)，換言之，僅有待量測之覆晶式發光二極體900所發出的光能夠通過透光區302而進入光檢測裝置200，至於周遭的覆晶式發光二極體900所發出的光則會被遮光元件300之遮光區304擋住，而無法進入光檢測裝置200。如此一來，光檢測裝置200即能夠準確地量到單顆覆晶式發光二極體900的光強度。另一方面，只要將晶片膜100橫向H(即第1圖之覆晶式發光二極體900的排列方向)移動，或是將光檢測裝置200橫向H移動，即可量測下一顆覆晶式發光二極體900，不必再分別罩住每顆覆晶式發光二極體900(其需要覆晶式發光二極體900與光檢測裝置200之間相對縱向V移動，或者需要依序將每顆覆晶式發光二極體900移開)，因此能夠大幅縮短量測的時間。In short, the measuring device of the light-emitting diode of the present embodiment can measure each flip-chip light-emitting diode 900 quickly and accurately. In detail, when performing measurement of a single flip-chip light-emitting diode 900, flip-chip illumination The diode 900 emits light toward the wafer film 100, wherein the wafer film 100 is, for example, a transparent material that allows the light beam to penetrate. However, as shown in FIG. 1, a part of the light beam emitted may excite the surrounding flip-chip LED 900, so that the other flip-chip LEDs 900 also emit light. However, in the present embodiment, the area of the light-transmitting region 302 covers a portion of the single flip-chip light-emitting diode 900 and the gap 910 (for example, as shown in FIG. 2A, if the flip-chip light-emitting diode 900 is Having a width W1, and the gap 910 has a width W2=0.2W1, the width W3 of the light-transmitting region 302 may take 1.1W1, but the invention is not limited thereto, in other words, only the flip-chip light-emitting diode to be measured The light emitted by the 900 can enter the photodetecting device 200 through the light transmitting region 302, and the light emitted by the surrounding flip-chip LED 900 is blocked by the light blocking region 304 of the light shielding member 300, and cannot enter the light detecting device. 200. In this way, the light detecting device 200 can accurately measure the light intensity of the single flip-chip light-emitting diode 900. On the other hand, as long as the lateral direction H of the wafer film 100 (i.e., the arrangement direction of the flip-chip light-emitting diodes 900 of FIG. 1) is moved, or the light detecting device 200 is moved laterally H, the next overlay can be measured. The crystalline light-emitting diode 900 does not need to cover each of the flip-chip light-emitting diodes 900 separately (which requires relative vertical V movement between the flip-chip light-emitting diode 900 and the light detecting device 200, or needs to be sequentially By shifting each of the flip-chip light-emitting diodes 900, the measurement time can be greatly shortened.
在本實施方式中，量測裝置更包含探針組400，設置於覆晶式發光二極體900相對光檢測裝置200之一側。探針組400能夠縱向V移動以接觸覆晶式發光二極體900。透過探針組400，可對覆晶式發光二極體900提供測試電 源。當被提供測試電源時，覆晶式發光二極體900即朝向晶片膜100發光。光束依序穿透晶片膜100與遮光元件300之透光區302而被光檢測裝置200所收集。In the present embodiment, the measuring device further includes a probe set 400 disposed on one side of the flip-chip LED 900 with respect to the photodetecting device 200. The probe set 400 is movable in the longitudinal direction V to contact the flip-chip light emitting diode 900. Test power can be provided to the flip-chip LED 900 through the probe set 400 source. When the test power source is supplied, the flip-chip type light emitting diode 900 emits light toward the wafer film 100. The light beam sequentially penetrates the wafer film 100 and the light transmitting region 302 of the light shielding member 300 to be collected by the light detecting device 200.
另外，當探針組400接觸覆晶式發光二極體900時，遮光元件300會支撐晶片膜100，使探針組400與覆晶式發光二極體900電性連接。也就是說，遮光元件300不但有遮光的作用，更有支撐晶片膜100與覆晶式發光二極體900的效果，使得探針組400能夠提供足夠的下壓力(目前所需的下壓力為3~5g)以與覆晶式發光二極體900電性連接，而覆晶式發光二極體900也就不需要以真空吸附的方式固定於晶片膜100。In addition, when the probe set 400 contacts the flip-chip LED 900, the shading element 300 supports the wafer film 100, and the probe set 400 is electrically connected to the flip-chip LED 900. That is to say, the shading element 300 not only has the function of shielding light, but also has the effect of supporting the wafer film 100 and the flip-chip LED 900, so that the probe set 400 can provide sufficient downforce (the currently required downforce is 3~5g) is electrically connected to the flip-chip type light-emitting diode 900, and the flip-chip type light-emitting diode 900 does not need to be fixed to the wafer film 100 by vacuum adsorption.
詳細而言，當進行單顆覆晶式發光二極體900之量測時，探針組400與光檢測裝置200會分別移至待測之覆晶式發光二極體900的上、下方，接著探針組400沿著縱向V移動以接觸且下壓覆晶式發光二極體900。因遮光元件300支撐住晶片膜100與覆晶式發光二極體900，因此探針組400與覆晶式發光二極體900之間能夠具有良好的電性連接。探針組400所提供的電源讓覆晶式發光二極體900向晶片膜100發光，僅待量測之覆晶式發光二極體900所發出的光束能夠通過遮光元件300之透光區302，因此被光檢測裝置200所量測，而周遭之覆晶式發光二極體900所發出的光則被遮光區304擋住。接下來，只需將晶片膜100或光檢測裝置200橫向H移動，待探針組400驅動下一顆覆晶式發光二極體900後，光檢測裝置200即可量測該顆 覆晶式發光二極體900，因此能夠大幅縮短量測的時間。In detail, when the measurement of the single flip-chip LED 900 is performed, the probe set 400 and the photodetecting device 200 are respectively moved to the upper and lower sides of the flip-chip LED 900 to be tested. The probe set 400 is then moved along the longitudinal direction V to contact and underlie the crystalline light-emitting diode 900. Since the light shielding element 300 supports the wafer film 100 and the flip chip type light emitting diode 900, the probe set 400 and the flip chip type light emitting diode 900 can have a good electrical connection. The power supply provided by the probe set 400 causes the flip-chip LED 900 to emit light to the wafer film 100, and only the light beam emitted by the flip-chip LED 900 to be measured can pass through the light-transmitting region 302 of the light-shielding element 300. Therefore, it is measured by the photodetecting device 200, and the light emitted by the surrounding flip-chip LED 900 is blocked by the light blocking region 304. Next, only the wafer film 100 or the photodetecting device 200 is moved laterally H. After the probe set 400 drives the next flip-chip LED 900, the photodetecting device 200 can measure the photo. Since the flip-chip type light-emitting diode 900 is used, the measurement time can be greatly shortened.
在本實施方式中，遮光元件300為板材310，且透光區302為開口312，亦即待量測之覆晶式發光二極體900所發出的光能夠通過開口312，而周遭的覆晶式發光二極體900則會被板材310所擋住，且板材310亦具有足夠的硬度以支撐晶片膜100。板材310之材質例如為金屬板，然而本發明不以此為限。In the present embodiment, the light-shielding element 300 is a plate material 310, and the light-transmitting region 302 is an opening 312, that is, the light emitted by the flip-chip light-emitting diode 900 to be measured can pass through the opening 312, and the surrounding flip-chip The light-emitting diode 900 is blocked by the plate 310, and the plate 310 also has sufficient hardness to support the wafer film 100. The material of the plate 310 is, for example, a metal plate, but the invention is not limited thereto.
在本實施方式中，光檢測裝置200為積分球。當待量測之覆晶式發光二極體900所發出的光自遮光元件300之透光區302進入積分球後，會在積分球中經過充分的反射與散射，接著被積分球中之光度計(photo meter)205所偵測。其中積分球之內表面可塗佈材質為硫酸鋇之反射層，此為本領域技術人員所熟知，因此不再贅述。In the present embodiment, the photodetecting device 200 is an integrating sphere. When the light emitted by the flip-chip LED 900 to be measured enters the integrating sphere from the light transmitting region 302 of the shading element 300, it is sufficiently reflected and scattered in the integrating sphere, and then the luminosity in the integrating sphere. Photo meter 205 detected. The inner surface of the integrating sphere can be coated with a reflective layer of barium sulfate, which is well known to those skilled in the art and therefore will not be described again.
接著請參照第2B圖，其為第1圖之區域P之另一實施方式的局部放大圖。本實施方式與第2A圖之實施方式的不同處在於遮光元件300的結構。在本實施方式中，遮光元件300的開口312之內壁313越靠近光檢測裝置200其口徑越大，換言之，開口312之內壁313越靠近晶片膜100其口徑越小。如此的設置能夠增加收集光束的效率。具體而言，當光束自開口312通過遮光元件300後，大角度入射的光束會打至內壁313，而內壁313能夠將光束反射至光檢測裝置200的內部。Next, please refer to FIG. 2B, which is a partial enlarged view of another embodiment of the region P of FIG. 1. The difference between this embodiment and the embodiment of FIG. 2A lies in the structure of the light shielding element 300. In the present embodiment, the closer the inner wall 313 of the opening 312 of the light-shielding member 300 is to the photodetecting device 200, the smaller the aperture, in other words, the closer the inner wall 313 of the opening 312 is to the wafer film 100, the smaller the aperture. Such an arrangement can increase the efficiency of collecting light beams. Specifically, when the light beam passes through the light shielding member 300 from the opening 312, the light beam incident at a large angle hits the inner wall 313, and the inner wall 313 can reflect the light beam to the inside of the light detecting device 200.
而在一或多個實施方式中，遮光元件300可選擇性地更包含反射層320，形成於開口312之內壁313，且更可 形成於遮光元件300面向光檢測裝置200的一面。反射層320能夠增加內壁313的反射率，以增加量測的準確性。反射層320之材質例如為硫酸鋇，其可利用塗佈的方式形成於內壁313上，然而本發明不以此為限。In one or more embodiments, the light shielding member 300 can further include a reflective layer 320, formed on the inner wall 313 of the opening 312, and more preferably It is formed on one side of the light shielding element 300 facing the light detecting device 200. The reflective layer 320 can increase the reflectivity of the inner wall 313 to increase the accuracy of the measurement. The material of the reflective layer 320 is, for example, barium sulfate, which can be formed on the inner wall 313 by coating, but the invention is not limited thereto.
接著請參照第3圖，其為本發明另一實施方式之發光二極體之量測裝置的側視圖。本實施方式與第1圖之實施方式的不同處在於遮光元件300的種類。在本實施方式中，遮光元件300包含透明載體330與遮光層340。遮光層340形成於透明載體330相對光檢測裝置200之表面332。遮光層340僅位於遮光區304中，而被遮光層340暴露出之部分透明載體330則形成透光區302。透明載體330允許覆晶式發光二極體900所發出之光通過，而遮光層340能夠阻擋周遭之覆晶式發光二極體900所發出的光。透明載體330之材質例如為玻璃，而遮光層340之材質例如為黑色油墨，可以塗佈方式形成於透明載體330之表面332，然而本發明並不以上述之材質為限。另外，因透明載體330(例如為玻璃)具有足夠的硬度，因此當進行量測時，探針組400能夠提供足夠的下壓力以與覆晶式發光二極體900電性連接。Next, please refer to FIG. 3, which is a side view of a measuring device for a light-emitting diode according to another embodiment of the present invention. The difference between this embodiment and the embodiment of Fig. 1 lies in the type of the light shielding element 300. In the present embodiment, the light shielding element 300 includes a transparent carrier 330 and a light shielding layer 340. The light shielding layer 340 is formed on the surface 332 of the transparent carrier 330 opposite to the light detecting device 200. The light shielding layer 340 is only located in the light shielding area 304, and a portion of the transparent carrier 330 exposed by the light shielding layer 340 forms the light transmission area 302. The transparent carrier 330 allows the light emitted by the flip-chip LED 900 to pass, and the light shielding layer 340 can block the light emitted by the surrounding flip-chip LED 900. The material of the transparent carrier 330 is, for example, glass, and the material of the light shielding layer 340 is, for example, black ink, and can be formed on the surface 332 of the transparent carrier 330 by coating. However, the present invention is not limited to the above materials. In addition, since the transparent carrier 330 (for example, glass) has sufficient hardness, the probe set 400 can provide sufficient downforce to be electrically connected to the flip-chip LED 900 when measured.
然而光檢測裝置200之種類並不以積分球為限。接著請參照第4圖，其為本發明再一實施方式之量測裝置的側視圖。本實施方式與第1圖之實施方式的不同處在於光檢測裝置200的種類。在本實施方式中，光檢測裝置200可包含反射腔210與光偵測器(photo detector)220。反射腔 210具有收光口202，而光偵測器220設置於反射腔210中。光束可自遮光元件300的透光區302進入反射腔210，而反射腔210能夠將光束反射至光偵測器220，藉此測量其光強度。在一或多個實施方式中，光偵測器220例如為光電二極體(photo diode)，然而本發明不以此為限。另外，反射腔210之外表面可塗佈黑色材料，以降低環境光之干擾，而反射腔210之內表面可塗佈反射層(如硫酸鋇)，以增加反射率。However, the type of the light detecting device 200 is not limited to the integrating sphere. Next, please refer to FIG. 4, which is a side view of a measuring device according to still another embodiment of the present invention. The difference between this embodiment and the embodiment of Fig. 1 lies in the type of the photodetecting device 200. In the present embodiment, the light detecting device 200 can include a reflective cavity 210 and a photo detector 220. Reflecting cavity The 210 has a light collection port 202, and the photodetector 220 is disposed in the reflective cavity 210. The light beam can enter the reflective cavity 210 from the light transmissive region 302 of the light blocking element 300, and the reflective cavity 210 can reflect the light beam to the photodetector 220, thereby measuring its light intensity. In one or more embodiments, the photodetector 220 is, for example, a photo diode, but the invention is not limited thereto. In addition, the outer surface of the reflective cavity 210 may be coated with a black material to reduce the interference of ambient light, and the inner surface of the reflective cavity 210 may be coated with a reflective layer (such as barium sulfate) to increase the reflectivity.
在其他的實施方式中，光偵測器220可替換為太陽能板(solar cell)，亦可達到量測光強度之功效。In other embodiments, the photodetector 220 can be replaced with a solar cell, and can also measure the light intensity.
綜上所述，上述實施方式之發光二極體之量測裝置能夠快速且精確地量測每一覆晶式發光二極體。僅有待量測之覆晶式發光二極體所發出的光能夠通過遮光元件之透光區而進入光檢測裝置，至於周遭的覆晶式發光二極體所發出的光則會被遮光元件之遮光區擋住。如此一來，光檢測裝置即能夠準確地量到單顆覆晶式發光二極體的光強度。另一方面，光檢測裝置只要橫向移動即可量測下一顆覆晶式發光二極體，因此能夠大幅縮短量測的時間。In summary, the measuring device of the light-emitting diode of the above embodiment can measure each flip-chip light-emitting diode quickly and accurately. Only the light emitted by the flip-chip light-emitting diode to be measured can enter the light detecting device through the light-transmitting region of the light-shielding element, and the light emitted by the surrounding flip-chip light-emitting diode is blocked by the light-shielding element. Blocked by the area. In this way, the light detecting device can accurately measure the light intensity of the single flip-chip light-emitting diode. On the other hand, the photodetecting device can measure the next flip-chip light-emitting diode as long as it moves laterally, so that the measurement time can be greatly shortened.
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
100‧‧‧晶片膜100‧‧‧ wafer film
200‧‧‧光檢測裝置200‧‧‧Light detection device
202‧‧‧收光口202‧‧‧Lighting port
205‧‧‧光度計205‧‧‧photometer
300‧‧‧遮光元件300‧‧‧ shading elements
302‧‧‧透光區302‧‧‧Light transmission area
304‧‧‧遮光區304‧‧‧ shading area
310‧‧‧板材310‧‧‧ plates
312‧‧‧開口312‧‧‧ openings
313‧‧‧內壁313‧‧‧ inner wall
400‧‧‧探針組400‧‧‧ probe set
900‧‧‧覆晶式發光二極體900‧‧‧Flip-chip light-emitting diode
910‧‧‧間隙910‧‧‧ gap
H‧‧‧橫向H‧‧‧ Landscape
P‧‧‧區域P‧‧‧ area
V‧‧‧縱向V‧‧‧ portrait
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| TW201109635A (en) * | 2009-09-10 | 2011-03-16 | Fittech Co Ltd | Optical characteristic measurement method for LED |
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| TW201109635A (en) * | 2009-09-10 | 2011-03-16 | Fittech Co Ltd | Optical characteristic measurement method for LED |
| US20140080230A1 (en) * | 2010-02-05 | 2014-03-20 | Samsung Electronics Co., Ltd. | Apparatus and method for evaluating optical properties of led and method for manufacturing led device |
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