201115124 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種盤體’特別是指一種用於光學檢 測的承載盤。 【先前技術】 參閱圖1、2,現有的半導體發光元件之光參數量測設 備2，如美國專利第6,734,959號發明專利所揭示，一半導 體發光光件22放置在一承載盤丨上，該承載盤丨是安裝於 該光參數量測設備2的機座21上，一積分球24對準該半 導體發光元件22上方，運用二探針23導電點亮該半導體 發光元件22上的其中一發光單元221之後’再由該積分球 24收集來自該發光單元221所發出的光線來進行光參數（ 如.光度、光波長 '光譜等參數）量測。 實際上，半導體發光元件22多為360度發光的，然而 ，由於該等探針23的存在，進而導致半導體發光元件22 無法置入該積分球24當中進行完整的收光。以現有的光參 數量測設備2來說，該積分球24與該半導體發光元件22 中心所構成的收光角度僅有12度〜12〇度，換句話說，現有 的光參數量測設備2根本無法收集前述收光角度以外的光 線而且/、夠i測該半導體發光元件22自頂部所發出且 未文到該等探針23.遮蔽的光線，量測的準確度因此大打折 扣〇 此外，X限於製程良率，不同半導體發光元件22的光 形不盡相同，頂部和底部發光的比例也存有差異，且封裝 201115124 後的成品通常會應用到底部所發出的光線，然而，由於該 承載盤1 一般皆設計為深色，因此該半導體發光元件22底 部所發出的光線無法有效反射至上方，使得該積分球24無 法將該半導體發光元件22底部所發出的光線納入量測範圍 ，而造成各項光參數於量測上的誤差，使量測到的光參數 會與最後封裝完成的產品產生相當大的落差，對於業者在 品質管控上將會造成很大的困擾。 【發明内容】 因此，本發明之目的，即在提供一種可以反射光量的 承載盤。 於是，本發明承載盤，適用於承載至少一發光源，該 承載盤包含一本體及一反射件。該反射件安裝於該本體與 該發光源之間以反射該發光源所產生的光線。 本發明一種光參數量測方法，適用於量測一發光源， 該光參數量測方法包含下列步驟： (A) 犁備一承載盤，該承載盤包括一本體，及一安裝 於該本體與該發光源之間以反射該發光源所產生的光㈣ 反射件； (B) 將複數發光元件放置於該反射件上； (C) 利用點測方式使其中—發光元件發光而形成該發 光源；及 (D) 以學感測器接收分別來自該發光源朝該光學 .感測器發射的光’及該發切'朝相反該光學感測器發射後 經過該反射件反射後的光，並進行量測計算，以得..到該發 201115124 . 光源的光參數。 _ • 本發明之功效在於該反射件可將該發光源朝該反射件 發射的光朝反方向反射，以提高後續量測該發光源的發光 量時的準確性。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之二個較佳實施例的詳細說明中，將可 清楚的呈現。 ® 在本發明被詳細描述之前，要注意的是，在以下的說 明内容中，類似的元件是以相同的編號來表示。 參閱圖3、4、.5，本發明承載盤5之第一較佳實施例適 用於文裝於一光學檢測平台4内，該承載盤5包含一本體ό 及一反射件7。 該光學檢測平台4包括一機座41、一位於該機座41上 方且具有複數發光元件421的晶圓42、一位於該晶圓42下 方以承載該晶圓42的透光膜片43、二位於該晶圓42上方 鲁 的探針44，及一位於該晶圓42上方的光學感測器45。於 本實施例中，當該等發光元件421的其中一者通電時，會 發光而形成一發光源。 _該本體6呈圓盤狀且安裝於該機座…具有複數發光 元件421的該晶圓42及該透光媒片43是放置於該承載盤$ Jl 〇 豸反射件7安裝於該本體6與該等發光元件421之間 ’且具有一相鄰該等發光元# 421的硬質透明層71、一相 201115124 郴該本體6的反射層72，及一位轸該反射層72與該本體6 之間的保„蔓層73。當該等發光元件42丨的至少其中一者通 電而形成該發光源時，該反射件7即可反射該發光源所產 生的光線。 忒硬質透明層71為硬度5.5以上、透射率大於9〇%的 高硬度且高透射率材質製成，其中，選用的材質為一般玻 璃、光學玻璃、石英玻璃、青板玻璃、白板玻璃、強化玻 璃及藍寶石的其中一者。於本實施例中，該硬質透明層71 為一種透射率90%的光學玻璃製成。 該反射層72是由反射率90%以上的高反射率材質電鍍 製成’其中’選用的材質分別選自於鋁、金、銀、鉻、铑 ，及此等之組合所組成的群體。於本實施例中，該反射層 72為反射率9〇%的鋁金屬電錢製成。 該保護層73是用以避免該反射層72接觸空氣而被破 壞，如氧化、硫化等作用。於本實施例中，該保護層73是 由金所电鍍製成，但也可以是其他可保護該反射層而不 遭受破壞的其他材質製成。 要說明的是，該反射件7的材質也可以是一種多層介 電膜’而可達到前述該硬質透明層71、該反射層72及該保 護層73所產生的效果。 使用時，是使用一種可利用該承載盤之光參數量測方 法進行光學檢測，該光參數量測方法，適用於量測該發光 源’且包含下列步驟（A)、步驟（B)、步驟（ c)，及步驟 (D) 〇 201115124 於該步驟⑷中’是先製備前述之該承載盤5,盆中 該反射件7是在該硬質透明層71的下表面鍍上—層旦有光 反射功能的該反射層72,並於該反射層72的下表面再鍍上 一層避免該反射層則接觸空氣而被破壞的該保護層^ 於該步驟⑻巾，將具有複數發光元件42ι的晶圓42 放置於該反射件7後，再將該反射件7放置於該機座仏 於該步驟（c)巾，利用點測方式操作該等探針44朝 其中一發光元件421延伸並電連接於該發光元件42ι，以驅 使該發光元件421通電發光後而形成該發光源。201115124 VI. Description of the Invention: [Technical Field] The present invention relates to a disk body', particularly to a carrier disk for optical inspection. [Prior Art] Referring to Figures 1 and 2, an optical parameter measuring device 2 of a conventional semiconductor light-emitting device, as disclosed in U.S. Patent No. 6,734,959, a semiconductor light-emitting member 22 is placed on a carrier tray, the carrier The disk is mounted on the base 21 of the optical parameter measuring device 2, an integrating sphere 24 is aligned above the semiconductor light emitting element 22, and the two light emitting units are electrically illuminated by the two probes 23 After 221, the light emitted from the light-emitting unit 221 is collected by the integrating sphere 24 to measure light parameters (such as luminosity, light wavelength 'spectrum, etc.). In fact, the semiconductor light-emitting elements 22 are mostly 360-degree light-emitting. However, due to the presence of the probes 23, the semiconductor light-emitting elements 22 are not placed in the integrating sphere 24 for complete light collection. In the conventional optical parameter measuring device 2, the light collecting angle formed by the integrating sphere 24 and the center of the semiconductor light emitting element 22 is only 12 degrees to 12 degrees, in other words, the existing optical parameter measuring device 2 It is impossible to collect the light outside the above-mentioned light-receiving angle at all, and/or to measure the light emitted from the top of the semiconductor light-emitting element 22 and not covered by the probes 23. The accuracy of the measurement is greatly reduced. X is limited to the process yield, the light shape of different semiconductor light-emitting elements 22 is not the same, and the ratio of the top and bottom light-emitting is also different, and the finished product after the package 201115124 is usually applied to the light emitted from the bottom, however, due to the load The disk 1 is generally designed to be dark, so that the light emitted from the bottom of the semiconductor light-emitting element 22 cannot be effectively reflected upward, so that the integrating sphere 24 cannot incorporate the light emitted from the bottom of the semiconductor light-emitting element 22 into the measurement range, resulting in The error of the various optical parameters on the measurement makes the measured optical parameters have a considerable gap with the final packaged product. It will cause great distress on the control. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a carrier tray that can reflect the amount of light. Therefore, the carrier disk of the present invention is adapted to carry at least one light source, and the carrier disk comprises a body and a reflector. The reflector is mounted between the body and the illumination source to reflect light generated by the illumination source. The optical parameter measurement method is applicable to measuring a light source. The light parameter measurement method comprises the following steps: (A) plowing a carrier disk, the carrier disk comprises a body, and a body is mounted on the body Between the illuminating sources, the light (four) reflecting member generated by the illuminating source is reflected; (B) the plurality of illuminating elements are placed on the reflecting member; (C) the illuminating element is illuminated by a spot method to form the illuminating source And (D) receiving, by the sensor, light emitted from the illumination source toward the optical sensor and the light emitted by the reflection sensor after being emitted by the reflection sensor, And carry out the measurement calculation, in order to get the light parameters of the light source of the 201115124. The effect of the present invention is that the reflecting member can reflect the light emitted from the illuminating source toward the reflecting member in a reverse direction to improve the accuracy of subsequent measurement of the illuminating amount of the illuminating source. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention. Prior to the detailed description of the invention, it is noted that in the following description, like elements are denoted by the same reference numerals. Referring to Figures 3, 4, and 5, the first preferred embodiment of the carrier 5 of the present invention is suitable for use in an optical inspection platform 4, which includes a body ό and a reflector 7. The optical detection platform 4 includes a base 41, a wafer 42 having a plurality of light-emitting elements 421 above the base 41, and a light-transmissive film 43 located under the wafer 42 to carry the wafer 42. A probe 44 located above the wafer 42 and an optical sensor 45 above the wafer 42. In this embodiment, when one of the light-emitting elements 421 is energized, it emits light to form a light source. The body 6 is in the shape of a disk and is mounted on the base. The wafer 42 having the plurality of light-emitting elements 421 and the light-transmissive medium 43 are placed on the carrier. J J 〇豸 The reflector 7 is mounted on the body 6 Between the light-emitting elements 421 and a rigid transparent layer 71 adjacent to the illuminants #421, a phase 201115124, a reflective layer 72 of the body 6, and a reflective layer 72 and the body 6 Between the vine layer 73. When at least one of the illuminating elements 42 is energized to form the illuminating source, the reflecting member 7 can reflect the light generated by the illuminating source. The hard transparent layer 71 is It is made of high hardness and high transmittance with a hardness of 5.5 or more and a transmittance of more than 9〇%. Among them, the selected materials are general glass, optical glass, quartz glass, blue glass, white glass, tempered glass and sapphire. In the present embodiment, the hard transparent layer 71 is made of an optical glass having a transmittance of 90%. The reflective layer 72 is made of a high reflectivity material having a reflectance of 90% or more. Selected from aluminum, gold, silver, chromium, And in the present embodiment, the reflective layer 72 is made of aluminum metal electricity having a reflectivity of 9〇%. The protective layer 73 is used to prevent the reflective layer 72 from contacting the air. It is destroyed, such as oxidation, vulcanization, etc. In the present embodiment, the protective layer 73 is made of gold, but may be made of other materials that can protect the reflective layer without being damaged. The material of the reflector 7 may be a multilayer dielectric film 'the effect of the hard transparent layer 71, the reflective layer 72 and the protective layer 73. When used, one type of use is available. The optical parameter measurement method of the carrier disk performs optical detection, and the optical parameter measurement method is suitable for measuring the illumination source' and includes the following steps (A), (B), (c), and (D) 〇201115124 In the step (4), the carrier plate 5 is prepared first, and the reflecting member 7 in the basin is plated on the lower surface of the hard transparent layer 71. The reflective layer 72 has a light reflecting function. And plating a layer on the lower surface of the reflective layer 72 The protective layer is prevented from being damaged by the contact of the reflective layer. In the step (8), the wafer 42 having the plurality of light-emitting elements 42i is placed on the reflective member 7, and the reflective member 7 is placed on the base. In the step (c), the probes 44 are operated by a spotting method to extend toward the one of the light-emitting elements 421 and electrically connected to the light-emitting elements 42i to drive the light-emitting elements 421 to emit light to form the light-emitting source.
接著進行該步驟（D)，此時，該光學感測器45即可接 收到該發光源朝上方所發射的光，同時，該發光源朝下方 發射的光會通過該透光膜片43及該硬質透明層71 ,並於該 反射層72朝反方向反射，並在穿過該硬質透明層71與該 透光膜片43後，由該光學感測器45所接收，這樣一來， 該發光源於上、下二方向的光皆可受到該光學感測器45所 接收。最後計算該光學感測器45所量測到的光，並計算該 發光源的光參數，進而可得出準確的光學特性，而使檢測 後的光學特性是接近產品實際封裝後的數值，而減少品質 管控的困難度。 要說明的是’由於該硬質透明層71的硬度較高，因此 於多次量測不同的晶圓42後，該硬質透明層71並不會受 到到傷，因此也不會因刮傷的產生而降低該硬質透明層71 的透射率，且也可保護該反射層72不被破壞，而保持正常 的反射效果。 . 201115124 參閱圖5，本發明的一第二較佳實施例是類似於該第一 較佳實施例，其差異之處在於： 該本體6相對於會形成該發光源的該等發光元件421 的上表面具有—凹槽61及複數氣孔62,該反射件7是容置 於°亥凹丸61中’該等複數氣孔62於相反於上表面的開口 用以供一真空裝置（圖未示）裝設，如此，該反射件7及 該晶圓42即可受到該真空裝置的吸引而固定於該本體6上 〇 如此，該第二較佳實施例也可達到與上述第一較佳實 施例相同的目的與功效，並可進一步固定該反射件7及該 晶圓42。 綜上所述，該反射件7可將該發光源朝該反射件7發 t的光朝反方向反射，以提高後續量測該發光源的發光量 時的準確性，同時還可避免該反射件7的硬質透明層Μ受 到到傷而影響透射率，故確實能達成本發明之目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 月b以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一現有的承載盤與一光參數量測設備的組合示 意圖； 圖2是該現有的承載盤與一晶圓的立體分解圖； 圖3是本發明承載盤的一第一較佳實施例與一光學檢 201115124 測平台的組合示意圖； 體八：4是該第一較佳實施例與-透光膜片 體分解圖； 及 及—晶圓的立 圖5是該第一較佳實施例的一反射件的剖視示意 rsi · 圖， 圖 疋本發明承載盤的一第二較佳實 片月一 s问μ 庇只知例與一透光膜 片及一日曰固的立體分解圖。 201115124 【主要元件符號說明】 4…… •…光學檢測平台 6…… ••…本體 41···.· …·機座 61… …··凹槽 42····. …·晶圓 62•… •…·氣孔 421… •…發光元件 7…… ••…反射件 43··.·· •…透光膜片 71 ..... …··硬質透明層 44•，… …·探針 72·.··. .....反射層 45"… …·光學感測器 73.···. 1 ·…保護層 5…… •…承載盤 10Then, the step (D) is performed. At this time, the optical sensor 45 can receive the light emitted by the light source upward, and the light emitted from the light source downward passes through the transparent film 43 and The hard transparent layer 71 is reflected in the reflective layer 72 in the opposite direction, and is received by the optical sensor 45 after passing through the hard transparent layer 71 and the transparent film 43, so that Light from both the upper and lower directions of the light source can be received by the optical sensor 45. Finally, the light measured by the optical sensor 45 is calculated, and the optical parameters of the light source are calculated, thereby obtaining accurate optical characteristics, so that the optical characteristics after the detection are close to the actual packaged value of the product, and Reduce the difficulty of quality control. It should be noted that 'the hardness of the hard transparent layer 71 is high. Therefore, after the different wafers 42 are measured a plurality of times, the hard transparent layer 71 is not damaged, so that scratches are not generated. The transmittance of the hard transparent layer 71 is lowered, and the reflective layer 72 can also be protected from being destroyed, while maintaining a normal reflection effect. Referring to FIG. 5, a second preferred embodiment of the present invention is similar to the first preferred embodiment in that: the body 6 is opposite to the light-emitting elements 421 that will form the illumination source. The upper surface has a groove 61 and a plurality of air holes 62. The reflection member 7 is received in the angled hole 61. The plurality of holes 62 are opposite to the upper surface for supplying a vacuum device (not shown). Therefore, the reflector 7 and the wafer 42 can be fixed to the body 6 by being attracted by the vacuum device. The second preferred embodiment can also achieve the first preferred embodiment. The same purpose and effect can be achieved, and the reflector 7 and the wafer 42 can be further fixed. In summary, the reflecting member 7 can reflect the light emitted from the illuminating source toward the reflecting member 7 in a reverse direction to improve the accuracy of subsequently measuring the illuminating amount of the illuminating source, and can also avoid the reflection. The hard transparent layer of the member 7 is damaged to affect the transmittance, so that the object of the present invention can be achieved. However, the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, that is, the simple equivalent changes made by the scope of the invention and the description of the invention. Modifications are still within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of a combination of a conventional carrier and an optical parameter measuring device; FIG. 2 is an exploded perspective view of the conventional carrier and a wafer; FIG. 3 is a carrier of the present invention. A schematic diagram of a combination of a first preferred embodiment and an optical inspection 201115124; a body 8: 4 is an exploded view of the first preferred embodiment and the transparent film; and the wafer 5 is A cross-sectional view of a reflector of the first preferred embodiment is a schematic diagram of a second preferred real film of the present invention, and a light transmissive film and a transparent cover. A solid exploded view of the sun. 201115124 [Explanation of main component symbols] 4... •...optical detection platform 6... ••...body 41·······rack 61......·groove 42····.... wafer 62 •... •... vent 421... •... illuminating element 7... ••...reflector 43······...transparent diaphragm 71 ........·hard transparent layer 44•,... Probe 72····......reflective layer 45"...·Optical sensor 73.···. 1 ·...Protective layer 5...•...Loading tray 10