TWI235245B - SiO2-coated mirror substrate for EUV - Google Patents
SiO2-coated mirror substrate for EUV Download PDFInfo
- Publication number
- TWI235245B TWI235245B TW088111300A TW88111300A TWI235245B TW I235245 B TWI235245 B TW I235245B TW 088111300 A TW088111300 A TW 088111300A TW 88111300 A TW88111300 A TW 88111300A TW I235245 B TWI235245 B TW I235245B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- amorphous
- cover layer
- mirror
- covering
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract description 4
- 229910052681 coesite Inorganic materials 0.000 title 1
- 229910052906 cristobalite Inorganic materials 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 229910052682 stishovite Inorganic materials 0.000 title 1
- 229910052905 tridymite Inorganic materials 0.000 title 1
- 229910018540 Si C Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims 2
- 238000005286 illumination Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000005498 polishing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/062—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements the element being a crystal
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
只 底 基 之。 質光 品拋 種被 此上 ，面 驗的 經大 據夠 依在 ，地 時勻 曲均 彎法 烈無 強全 面完 其或 尤強 勉 1235245 五、發明說明（1) 本發明係有關一種反射鏡基底、設有此種反射鏡基底 之反射鏡及其製造法、以及一種超紫外線投影曝光設備。 單晶石夕是高熱負荷形狀穩定之高要求反射鏡的優先基 底材料。 使用於X射線範圍時，尤其是軟X射線，亦稱作超紫外 線（E U V )，需要微粗彳造值在埃範圍之極平坦表面。其可利 用所謂的超級拋光而達成。 此種超紫外線反射鏡優先使用於超紫外線石版印刷的 照明反射鏡、遮蔽罩及投影物鏡。其拋光品質決定整個系 統的可使用性。例如參見Κ . Η 〇 h， B u 1 1 . E 1 e c t r 〇 t e c h η . Lab. 49， No. 12， 1 9 8 5 年 10 月，第 47-54 頁，Τ·Ε·
Jewell et al· Proz· SPIE Vol. 1527 (1991) ，David M. Williamson, OSA IODC Conference paper LWA 2-1, 第18卜184頁，1 9 9 8年6月10日。 專利JP-B2-96/032 592曾提出一種X射線反射鏡，一 具有燒結S i C之矩陣被覆以一層晶體S i C，而得到一平坦的 精確表面。
第4頁 1235245 五、發明說明（2) 本發明之目的在於提供一種反射鏡基底，其結合矽單 晶基底之正面特性與優良的超級拋光特性。 本發明目的利用申請專利範圍第1項之反射鏡基底而 達成。其在一具低熱延展性與高導熱性的晶體基底（例如 鑽石、B N、S i C、矽）設一層薄非晶體層，其例如由石英玻 璃、非晶體Si 02、A 1 2 03構成。如此而得到一極適合超級拋 光之覆蓋層，而不妨害基底之其他特性。
申請專利範圍第2項提出一有利設計，其使非晶體層 之厚度為1-100 //m。 申請專利範圍第3項提出一設有此種基底之反射鏡。 申請專利範圍第4項提出一此種反射鏡之優先製造 法。 申請專利範圍第5項提出本發明反射鏡使用於超紫外 線投影曝光設備之有利用途。
以下將依據附圖進一步說明本發明。 圖1顯示本發明超紫外線投影曝光設備之示意圖。
第5頁
Claims (1)
1235245 _案號88111300_年月曰 修正_ 六、申請專利範圍 6. 一種超紫外線投影曝光設備，包含： 一超紫外線光源； 一照明光學元件； 一遮蔽罩； 一投影物鏡； 一晶圓，以及 至少一反射鏡，包括在該照明光學元件内或是在該投 影物鏡内，該至少一反射鏡包含有一晶體基底、一非晶體 覆蓋層設在該基底上，以及覆蓋在該非晶體覆蓋層上的一 反射層。 7. —種反射鏡，包含： 一晶體基底； 一非晶體覆蓋層，設於該基底；以及 一反射鏡，覆蓋在該非晶體覆蓋層上； 其中該基底包含有下列至少一材料··鑽石、BN、S i C、 石夕。 8. —種反射鏡，包含： 一晶體基底； 一非晶體覆蓋層，設於該基底；以及 一反射鏡，覆蓋在該非晶體覆蓋層上； 其中該覆蓋層包含有A 12 03。
第10頁 2005. 04.19.011 1235245 案號 88111300 六、申請專利範圍 9. 一種反射鏡，包含： 月 曰 修正 一晶體基底； 一非晶體覆蓋層，設於該基底；以及 一反射鏡，覆蓋在該非晶體覆蓋層上； 其中該非晶體覆蓋層具有微粗值在埃的範圍
I 第11頁 2004.07.15.012
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19830449A DE19830449A1 (de) | 1998-07-08 | 1998-07-08 | SiO¶2¶-beschichtetes Spiegelsubstrat für EUV |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI235245B true TWI235245B (en) | 2005-07-01 |
Family
ID=7873305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088111300A TWI235245B (en) | 1998-07-08 | 1999-07-02 | SiO2-coated mirror substrate for EUV |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6453005B2 (zh) |
| EP (1) | EP1095379B1 (zh) |
| JP (1) | JP2002520601A (zh) |
| KR (1) | KR20010079499A (zh) |
| DE (2) | DE19830449A1 (zh) |
| TW (1) | TWI235245B (zh) |
| WO (1) | WO2000003400A1 (zh) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE41220E1 (en) | 1999-07-22 | 2010-04-13 | Corning Incorporated | Extreme ultraviolet soft x-ray projection lithographic method system and lithographic elements |
| DE10021075A1 (de) * | 2000-04-28 | 2001-10-31 | Max Planck Gesellschaft | Verwendung von isotopenangereicherten Halbleiter-Einkristallen als röntgenoptische Komponenten |
| US7843632B2 (en) * | 2006-08-16 | 2010-11-30 | Cymer, Inc. | EUV optics |
| US6855380B2 (en) | 2001-05-18 | 2005-02-15 | Carl Zeiss Smt Ag | Method for the production of optical components with increased stability, components obtained thereby and their use |
| DE10132819B4 (de) * | 2001-05-18 | 2006-04-13 | Carl Zeiss Smt Ag | Verfahren zur Herstellung optischer Bauteile mit erhöhter Stabilität, damit erhaltene optische Elemente und ihre Verwendung |
| EP1401323A4 (en) | 2001-05-31 | 2009-06-03 | Image Navigation Ltd | IMPLANTOLOGY METHODS WITH PICTURE CONTROL |
| DE10127086A1 (de) * | 2001-06-02 | 2002-12-05 | Zeiss Carl | Vorrichtung zur Reflexion von elektromagnetischen Wellen |
| DE10139188A1 (de) * | 2001-08-16 | 2003-03-06 | Schott Glas | Glaskeramik für röntgenoptische Komponenten |
| DE10163965B4 (de) * | 2001-08-29 | 2004-09-16 | Bte Bedampfungstechnik Gmbh | Lichtsperrende Beschichtung für Projektionszwecke sowie Verfahren zu deren Herstellung |
| US7145739B1 (en) | 2002-03-07 | 2006-12-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Lightweight optical mirrors formed in single crystal substrate |
| US20030206532A1 (en) | 2002-05-06 | 2003-11-06 | Extricom Ltd. | Collaboration between wireless lan access points |
| US7129010B2 (en) * | 2002-08-02 | 2006-10-31 | Schott Ag | Substrates for in particular microlithography |
| EP1598681A3 (de) * | 2004-05-17 | 2006-03-01 | Carl Zeiss SMT AG | Optische Komponente mit gekrümmter Oberfläche und Mehrlagenbeschichtung |
| DE102004060184A1 (de) * | 2004-12-14 | 2006-07-06 | Carl Zeiss Smt Ag | EUV-Spiegelanordnung |
| DE102007007907A1 (de) | 2007-02-14 | 2008-08-21 | Carl Zeiss Smt Ag | Verfahren zur Herstellung eines diffraktiven optischen Elements, nach einem derartigen Verfahren hergestelltes diffraktives optisches Element, Beleuchtungsoptik mit einem derartigen diffratkiven optischen Element, Mikrolithografie-Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik, Verfahren zum Herstellen eines mikroelektronischen Bauelements unter Verwendung einer derartigen Projektionsbelichtungsanlage sowie mit einem solchen Verfahren hergestelltes Bauelement |
| US20080280539A1 (en) * | 2007-05-11 | 2008-11-13 | Asml Holding N.V. | Optical component fabrication using amorphous oxide coated substrates |
| US20080318066A1 (en) * | 2007-05-11 | 2008-12-25 | Asml Holding N.V. | Optical Component Fabrication Using Coated Substrates |
| WO2009024181A1 (en) * | 2007-08-20 | 2009-02-26 | Optosic Ag | Method of manufacturing and processing silicon carbide scanning mirrors |
| DE102009040785A1 (de) * | 2009-09-09 | 2011-03-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrat aus einer Aluminium-Silizium-Legierung oder kristallinem Silizium, Metallspiegel, Verfahren zu dessen Herstellung sowie dessen Verwendung |
| DE102009049640B4 (de) | 2009-10-15 | 2012-05-31 | Carl Zeiss Smt Gmbh | Projektionsobjektiv für eine mikrolithographische EUV-Projektionsbelichtungsanlage |
| DE102011080636A1 (de) | 2010-09-27 | 2012-03-29 | Carl Zeiss Smt Gmbh | Spiegel und Projektionsbelichtungsanlage damit |
| DE102011003077A1 (de) * | 2011-01-25 | 2012-07-26 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung eines Substrates für ein reflektives optisches Element für die EUV-Lithographie |
| DE102011015141A1 (de) | 2011-03-16 | 2012-09-20 | Carl Zeiss Laser Optics Gmbh | Verfahren zum Herstellen eines reflektiven optischen Bauelements für eine EUV-Projektionsbelichtungsanlage und derartiges Bauelement |
| DE102011080408A1 (de) | 2011-08-04 | 2013-02-07 | Carl Zeiss Smt Gmbh | Semiaktive Kippkorrektur für feste Spiegel |
| US9075188B2 (en) * | 2011-08-31 | 2015-07-07 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of making lightweight, single crystal mirror |
| US10175391B2 (en) * | 2012-10-12 | 2019-01-08 | Lawrence Livermore National Security, Llc | Planarization of optical substrates |
| US9933617B2 (en) | 2014-05-21 | 2018-04-03 | Us Synthetic Corporation | Mirror including polycrystalline diamond body for use with a motor, scanning systems including the same, and related methods |
| DE102014219775A1 (de) | 2014-09-30 | 2014-12-31 | Carl Zeiss Smt Gmbh | Spiegelsubstrat für einen spiegel einer euv - projektionsbelichtungsanlage und verfahren zu seiner herstellung |
| DE102018207759A1 (de) * | 2018-05-17 | 2019-11-21 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen eines Substrats für ein optisches Element und reflektierendes optisches Element |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5317069A (en) * | 1976-07-30 | 1978-02-16 | Fujitsu Ltd | Semiconductor device and its production |
| JPS6453408A (en) * | 1987-08-25 | 1989-03-01 | Hitachi Ltd | Manufacture of single crystal multilayer film |
| JPH04190200A (ja) * | 1990-11-22 | 1992-07-08 | Ishikawajima Harima Heavy Ind Co Ltd | 真空紫外光領域用の多層膜ミラー及びその製法 |
| JPH0567525A (ja) * | 1991-09-06 | 1993-03-19 | Tdk Corp | 磁性積層体およびその製造方法ならびに磁気抵抗効果素子の製造方法 |
| JPH09318800A (ja) * | 1996-05-28 | 1997-12-12 | Japan Aviation Electron Ind Ltd | Ｘ線多層膜反射鏡 |
-
1998
- 1998-07-08 DE DE19830449A patent/DE19830449A1/de not_active Withdrawn
-
1999
- 1999-06-17 JP JP2000559570A patent/JP2002520601A/ja not_active Withdrawn
- 1999-06-17 WO PCT/EP1999/004209 patent/WO2000003400A1/de not_active Ceased
- 1999-06-17 KR KR1020017000156A patent/KR20010079499A/ko not_active Abandoned
- 1999-06-17 DE DE59902673T patent/DE59902673D1/de not_active Expired - Lifetime
- 1999-06-17 EP EP99931093A patent/EP1095379B1/de not_active Expired - Lifetime
- 1999-07-02 TW TW088111300A patent/TWI235245B/zh not_active IP Right Cessation
-
2001
- 2001-01-05 US US09/756,018 patent/US6453005B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20010028518A1 (en) | 2001-10-11 |
| DE59902673D1 (de) | 2002-10-17 |
| US6453005B2 (en) | 2002-09-17 |
| JP2002520601A (ja) | 2002-07-09 |
| WO2000003400A1 (de) | 2000-01-20 |
| KR20010079499A (ko) | 2001-08-22 |
| EP1095379A1 (de) | 2001-05-02 |
| DE19830449A1 (de) | 2000-01-27 |
| EP1095379B1 (de) | 2002-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI235245B (en) | SiO2-coated mirror substrate for EUV | |
| TW408240B (en) | Optical mount with UV adhesive and protective layer | |
| US6776006B2 (en) | Method to avoid striae in EUV lithography mirrors | |
| EP0279670B1 (en) | A reflection type mask | |
| US6011646A (en) | Method to adjust multilayer film stress induced deformation of optics | |
| US9541685B2 (en) | Method for producing a reflective optical component for an EUV projection exposure apparatus and component of this type | |
| TW449675B (en) | Multilayer attenuating phase-shift masks | |
| TWI288247B (en) | High precision mirror, and a method of making it | |
| US7428037B2 (en) | Optical component that includes a material having a thermal longitudinal expansion with a zero crossing | |
| CN102132209A (zh) | 具有高热传导率的euv掩模版基底 | |
| JP2011503654A (ja) | 紫外線反射光学素子、紫外線反射光学素子を作製する方法、および紫外線反射光学素子を備える投影露光装置 | |
| JP5800478B2 (ja) | Ｅｕｖｌ用途のための低熱膨張ガラス | |
| JPH11506876A (ja) | 紫外線リトグラフィー用の結像システム及び装置 | |
| JP2883100B2 (ja) | 軟ｘ線・真空紫外線用ハーフミラー又はビームスプリッター | |
| JP2016531319A (ja) | 特にマイクロリソグラフィ投影露光装置のミラー | |
| JPS63201656A (ja) | 多層膜反射型マスク | |
| JPH0868897A (ja) | 反射鏡およびその製造方法 | |
| JP3662571B2 (ja) | リソグラフ装置およびデバイス製造方法 | |
| JP5059283B2 (ja) | Ｘ線光学コンポーネントのための基板材料 | |
| JPH10339799A (ja) | 反射鏡及びその製造方法 | |
| JPH0868898A (ja) | 反射鏡およびその製造方法 | |
| JPH11326598A (ja) | 反射鏡およびその製造方法 | |
| JPH11329918A (ja) | 軟ｘ線投影露光装置 | |
| JPH07244199A (ja) | 投影露光方法及びその装置 | |
| JPH09142996A (ja) | 反射型マスク基板 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |