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TWI291079B - Photomask - Google Patents

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Publication number
TWI291079B
TWI291079B TW93111794A TW93111794A TWI291079B TW I291079 B TWI291079 B TW I291079B TW 93111794 A TW93111794 A TW 93111794A TW 93111794 A TW93111794 A TW 93111794A TW I291079 B TWI291079 B TW I291079B
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TW
Taiwan
Prior art keywords
reticle
region
substrate
transparent
frame
Prior art date
Application number
TW93111794A
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Chinese (zh)
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TW200535567A (en
Inventor
Chao-Yung Chu
Wen-Bin Hsieh
Te-Yang Fang
Original Assignee
United Microelectronics Corp
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Priority to TW93111794A priority Critical patent/TWI291079B/en
Publication of TW200535567A publication Critical patent/TW200535567A/en
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Publication of TWI291079B publication Critical patent/TWI291079B/en

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A photomask includes a substrate having a transparent substrate, a mask pattern positioned on a surface of the transparent substrate, a transparent electrostatic discharge (ESD) ring positioned on the surface of the transparent substrate and surrounding the mask pattern, a pellicle covering over the mask pattern, and a mounting adhesive used for sticking the pellicle on the transparent electrostatic discharge ring. The transparent electrostatic discharge ring is utilized to examine a binding condition between the pellicle and the transparent substrate and to suppress an electrostatic discharge.

Description

1291079 玫、發明說明·· 【發明所屬之技術領域】 本發明係m種光罩結構,特別是指—種可以檢查光罩保護蓋與 基板之密合程度以及避免產生靜電放電的光罩結構。 【先前技術】 •為了在半導體晶片上形成一設計的積體電路(integrated circuits) ’目前的半導難輯是先製作複數個光罩並在各光罩上分 別形成-設計的佈局目案(lay〇ut),然後再藉由微影製程來將各光罩 上的圖案以一定的比例逐次轉移到半導體晶片表面的各光阻層上,進 而將元整之積體電路的佈局圖案順利地製作在半導體晶片上。因此, 為了將積體電路的佈局圖案精確地轉移至半導體晶片上,光罩圖案的 製作與保護便是一相當重要的關鍵技術。 睛參考圖一與圖二,圖一為習知之光罩結構的上視圖,而圖二係為 圖一之光罩結構沿切線2-2’之剖面示意圖。如圖一與圖二所示,光罩 10包含有一透明的石英基板12,並且基板12表面包含有一光罩圖案 區12a、以及一光罩圖案層14設置於光罩圖案區I2a表面。此外,光 罩10另包含有一鉻膜16,設於基板12表面並環繞於光罩圖案層14之 外,以及一透明環狀區18,位於鉻膜16之内。其中,光罩圖案層14 係為一由複數個透光區與不透光區所組成之佈局圖案,其係用來進行 圖案轉移,而不透光的鉻膜丨6則是用來阻撞非必要之光線。除此之外, 透明壤狀區18内係不具有任何鉻金屬,其是用來作為一絕緣的靜電環 (electrostatic discharge ring, ESD ring),以絕緣光罩圖案層 14 以及鉻膜16,進而避免鉻膜丨6上的靜電傳導至光罩圖案層14内,而 產生靜電放電並導致線路圖案失真或損毀。 1291079 另一方面,光罩10還包含有一光罩保護蓋(pellicle)2〇,覆蓋於 光罩圖案14上方,用以防止灰塵等不潔物附著於光罩圖案14上。一 般而言,光罩保護蓋20係包含有一透光膠膜(transparent film)22, 一用以支撐透光膠膜22之框架(frame)24,以及一膠黏層(mounting adhesive)26,用來將框架24黏合至基板12之上,並且透光膠膜22 通常也是經由一膠黏層(未顯示)而黏合至框架24上。必須注意的是, 膠黏層26與基板12之間必須完全地密合,才可有效地防止灰塵附著 於光罩圖案14上,否則若膠黏層26的寬度太細、或是膠黏層26與基 板12之間具有孔隙或氣泡,則灰塵或殘膠等容易經由氣體流動而進入 光罩保護蓋20與基板12之間,並附著於光罩圖案層14上,因而影響 後續的微影製程之可靠性。例如,當一微粒附著於光罩圖案層14内之 透光區時,微影製程之圖案轉移過程便可能轉移該微粒之圖案於晶片 上’因而造成晶片圖案錯誤。 ^ 再者,如圖一所示,由於習知光罩保護蓋2〇之膠黏層26都是黏貼 於不透光的鉻膜16表面上,因此在進行微影製程之前,習知技術並無 法事先檢查膠黏層26與基板12之間是否具有縫隙、或是密合不佳的" 情形,往轉是產品出酬題後,才會發現光11()具有缺陷,如此 僅降低產品良率更是浪費成本。 【發明内容】 本發明的目岐提供一種光罩結構,以解決前述問題。 依據本發明之目的,本義陳佳魏儀提供 包含有-透明基板,-設於該透明基絲面的光罩_層^其 透明基板表面並環繞該光罩圖㈣的透明靜電環,—覆蓋。= 光ί保護蓋,以及—用來黏合該光罩保護“明C 膠黏層,其巾該翻靜電環侧來檢查該光罩保護纽験板之 1291079 密合程度,以及防止產生靜電放電。 。由於本發明係將該膠黏層黏合於該透明靜電環上,該透明靜電環不 僅可用來防止產生靜電放電,更可用來檢查郷黏層與該透明基板^ =的接合是否具有缺陷,以確保該光罩係不會遭受灰塵等不潔物之污 ^ ’進而可提高微影製程的可靠性並提昇產品良率。 【實施方式】 請參考圖三與圖四,圖三係為本發雜佳實施例之光軍上視圖,而 圖四係為®三所示之光罩沿切線4-4,之勤示意圖。如圖三與圖四所 不,光罩30係包含有一基板32,通常基板32必須是由高度透光且絕 緣的材質所構成,例如石英,並且紐32之表面包含有—光罩圖案區 32a、圍繞於光罩圖案區32a之内緣區域32b、以及一圍繞於内绫茂 域娜外側之外緣區賴c。此外,光罩3〇另包含有一設於光罩=案 區32a表面之光罩圖案層34,一設於内緣區域32b表面之膜36a , β又於外緣區域32c表面之路膜36b,以及一位於鉻膜36a與鉻膜36b 之間的透明環狀區38。其中,光罩_層34係為-由複數個透光區、 半透光區、不透光區或相位移區所組成之佈局圖案,其係用來進行圖 =之轉移,而鉻膜36a與36b則是用來阻擋非必要之光線,並且透明 %狀區38内不具有任何鉻金屬,其係用來作為一絕緣的靜電環,以絕 緣鉻膜36a與36b,並防止靜電放電之產生。一般而言,光罩圖案層 34、鉻膜36a與36b、與透明環狀區38係可同時形成,而其製作方法 係先沉積-鉻金屬層於基板32的表面,然後再利用一侧製程對該鉻 金屬層進行蝕刻,便可形成光罩圖案層34、鉻膜3如與361)'以及透 明環狀區38。 除此之外,光罩30還包含有一光罩保護蓋4〇,其係覆蓋於光罩圖 案34上方,用以防止灰塵尊不潔物附著於光罩圖案34上。並且光罩 1291079 保護蓋40主要係由一透光膠膜42、一框架44、與一膠黏層46構成, 其中透光膠膜42係為一高度透光的膠膜,例如硝化纖維 (nitrocellulose, NC)或含氟高分子(fluoropolymer),並且透光膠膜 42通常也是經由一膠黏層(未顯示)而黏合至框架44上。此外,框架 44是用來支撐透光膠膜42並係為一鋁框架,而且鋁框架44係經過陽 極處理,因此可避免反射光線。另一方面,膠黏層46係設於框架 上,其係用來將框架44黏合至基板32之透明環狀區38上,以使光罩 保護蓋40可覆蓋住整個光罩圖案34。此外,透明環狀區38的寬度dl 必須大於框架44的寬度d2,以使膠黏層46可黏附於透明環狀區38的 表面上,在本發明之較佳實施例中,透明環狀區38的寬度dl約為3 毫米(mm) ’而框架44的寬度d2約為2毫米,然而本發明並不限於此, 事實上,透明環狀區38與框架44的寬度係可視製程需要而定。 值得注思的是,如圖四所示,由於膠黏層係黏附於透明環狀區 38的表面上,因此本發明係可於光罩3〇製作完成或定期檢查時,利用 人工或機器(例如光學顯微鏡)由光罩3〇背面,亦即沿箭頭M,所指之 方向檢查雜層46與基板32之間雜合情況,練_ 46與基板災 之間的密合程度佳,則光罩30便可制於微難程巾關案轉移。隹 是,假若經過人工或機ϋ的檢測之後,發現膠軸46與基板%之間 具有縫隙、H泡或是練不⑽情形,則必騎光罩紐蓋4G與基板 32分離,之後再將新的光罩保護蓋4〇黏合至基板32上,最後再利用 人工或機H沿箭頭M,所指之方向檢鱗黏層46與基板⑧之間的黏 合情況,並魏上述麵以確保職層46與基板㈤之間錄密黏合。 相較於習知技術,本發明係將光罩保護蓋4〇之 明環^區38上,所赠日·狀區38不僅可用來作為靜電環^ 產生靜電放電,更可絲檢查膠黏層46與基板⑽之_接合是否 有缺陷,以確保光罩30之鮮圖鋪34係 物 污染,躺可提高郷製程的謂錄提昇產鮮不泳物」 1291079 以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做 之均等變化與修飾,皆應屬本發明專利之涵蓋範圍。 【圖式簡單說明】 圖式之簡單說明 圖一為習知之光罩結構的上視圖。 圖二係為圖一之光罩結構沿切線2-2’之剖面示意圖。 圖三係為本發明較佳實施例之光罩上視圖。 圖四係為圖三所示之光罩沿切線4-4’之剖面示意圖。 圖式之符號說明 10 光罩 12 石英基板 12a 光罩圖案區 14 光罩圖案層 16 鉻膜 18 透明琢*狀區 20 光罩保護蓋 22 透光膠膜 24 框架 26 膠黏層 30 光罩 32 基板 32a 光罩圖案區 32b 内緣區域 32c 外緣區域 34 光罩圖案層 36a 鉻膜 36b 鉻膜 38 透明環狀區 40 光罩保護蓋 42 透光膠膜 44 框架 46 膠黏層BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to m type reticle structures, and more particularly to a reticle structure capable of inspecting the degree of adhesion of a reticle protective cover to a substrate and avoiding electrostatic discharge. [Prior Art] • In order to form a designed integrated circuit on a semiconductor wafer, the current semi-conducting difficulty is to first create a plurality of reticle and separately form a layout plan on each reticle ( Lay〇ut), and then by lithography process to transfer the pattern on each mask to each photoresist layer on the surface of the semiconductor wafer in a certain proportion, thereby smoothly arranging the layout pattern of the integrated circuit Fabricated on a semiconductor wafer. Therefore, in order to accurately transfer the layout pattern of the integrated circuit to the semiconductor wafer, the fabrication and protection of the mask pattern is a very important key technology. Referring to Figures 1 and 2, Figure 1 is a top view of a conventional reticle structure, and Figure 2 is a cross-sectional view of the reticle structure of Figure 1 taken along line 2-2'. As shown in FIG. 1 and FIG. 2, the photomask 10 includes a transparent quartz substrate 12, and the surface of the substrate 12 includes a mask pattern region 12a, and a mask pattern layer 14 is disposed on the surface of the mask pattern region I2a. In addition, the reticle 10 further includes a chrome film 16 disposed on the surface of the substrate 12 and surrounding the reticle pattern layer 14, and a transparent annular region 18 located within the chrome film 16. The reticle pattern layer 14 is a layout pattern composed of a plurality of transparent regions and opaque regions, which is used for pattern transfer, and the opaque chrome film 丨6 is used for blocking. Non-essential light. In addition, the transparent soil region 18 does not have any chrome metal, and is used as an insulating electrostatic discharge ring (ESD ring) to insulate the mask pattern layer 14 and the chromium film 16, and further Electrostatic conduction on the chrome film crucible 6 is prevented from being conducted into the reticle pattern layer 14, and electrostatic discharge is generated and the line pattern is distorted or damaged. 1291079 On the other hand, the reticle 10 further includes a reticle protective cover 2 〇 covering the reticle pattern 14 for preventing impurities such as dust from adhering to the reticle pattern 14. In general, the reticle protective cover 20 includes a transparent film 22, a frame 24 for supporting the transparent film 22, and a mounting adhesive 26 for use. The frame 24 is bonded to the substrate 12, and the light transmissive film 22 is also typically bonded to the frame 24 via an adhesive layer (not shown). It must be noted that the adhesive layer 26 and the substrate 12 must be completely adhered together to effectively prevent dust from adhering to the reticle pattern 14, otherwise the width of the adhesive layer 26 is too thin or an adhesive layer. There is a void or a bubble between the substrate 26 and the substrate 12, so that dust or residual glue or the like easily flows between the reticle protective cover 20 and the substrate 12 via the gas, and adheres to the reticle pattern layer 14, thereby affecting subsequent lithography. Process reliability. For example, when a particle adheres to the light-transmissive region in the mask pattern layer 14, the pattern transfer process of the lithography process may transfer the pattern of the particle onto the wafer, thereby causing a wafer pattern error. ^ Further, as shown in FIG. 1, since the adhesive layer 26 of the conventional photomask protective cover 2 is adhered to the surface of the opaque chrome film 16, the prior art cannot be prior to the lithography process. Check whether there is a gap between the adhesive layer 26 and the substrate 12, or a poorly sealed " situation, after the product is paid for, it will find that the light 11() has defects, thus only reducing the product yield. It is a waste of cost. SUMMARY OF THE INVENTION The object of the present invention is to provide a reticle structure to solve the aforementioned problems. According to the purpose of the present invention, the original meaning of Chen Jiawei provides a transparent electrostatic ring comprising a transparent substrate, a photomask provided on the transparent base surface, and a transparent electrostatic ring covering the surface of the transparent cover. . = Light ί protective cover, and - used to bond the reticle to protect the "C-adhesive layer, the side of the squeegee to check the adhesion of the reticle protection button 12911, and to prevent electrostatic discharge. Since the adhesive layer is adhered to the transparent electrostatic ring, the transparent electrostatic ring can be used not only to prevent electrostatic discharge, but also to check whether the bonding between the adhesive layer and the transparent substrate has defects. Make sure that the reticle is not contaminated by impurities such as dust, which can improve the reliability of the lithography process and improve the yield of the product. [Embodiment] Please refer to Figure 3 and Figure 4, Figure 3 is the same. The upper view of the light armor of the preferred embodiment, and the fourth figure is the schematic diagram of the reticle along the tangential line 4-4, as shown in Fig. 3 and Fig. 4. The photomask 30 includes a substrate 32, usually The substrate 32 must be made of a highly transparent and insulating material such as quartz, and the surface of the button 32 includes a mask pattern region 32a, an inner edge region 32b surrounding the mask pattern region 32a, and a surrounding portion.绫茂域娜 outside outer edge area Further, the photomask 3 further includes a mask pattern layer 34 disposed on the surface of the mask = case 32a, a film 36a disposed on the surface of the inner edge region 32b, and a film film on the surface of the outer edge region 32c. 36b, and a transparent annular region 38 between the chrome film 36a and the chrome film 36b. wherein the reticle layer 34 is - consists of a plurality of light transmissive regions, semi-transmissive regions, opaque regions or phase shifts The layout pattern composed of the regions is used to transfer the image, while the chromium films 36a and 36b are used to block unnecessary light, and the transparent % region 38 does not have any chromium metal. As an insulating electrostatic ring, the chromium films 36a and 36b are insulated to prevent the generation of electrostatic discharge. In general, the mask pattern layer 34, the chromium films 36a and 36b, and the transparent annular region 38 can be simultaneously formed. The manufacturing method comprises the steps of: depositing a chrome metal layer on the surface of the substrate 32, and then etching the chrome metal layer by using a side process to form the reticle pattern layer 34, the chrome film 3 and the 361)', and the transparent ring. The mask 30. In addition, the reticle 30 further includes a reticle cover 4 〇 covering the reticle pattern Above the 34, the dust cover is prevented from adhering to the reticle pattern 34. The reticle 1291079 protection cover 40 is mainly composed of a transparent adhesive film 42, a frame 44, and an adhesive layer 46. The film 42 is a highly transparent film, such as nitrocellulose (NC) or fluoropolymer, and the light transmissive film 42 is also bonded to the adhesive layer (not shown). In addition, the frame 44 is used to support the transparent film 42 and is an aluminum frame, and the aluminum frame 44 is anodized to avoid reflection of light. On the other hand, the adhesive layer 46 is attached to The frame is used to bond the frame 44 to the transparent annular region 38 of the substrate 32 such that the reticle cover 40 can cover the entire reticle pattern 34. In addition, the width dl of the transparent annular region 38 must be greater than the width d2 of the frame 44 such that the adhesive layer 46 can adhere to the surface of the transparent annular region 38. In a preferred embodiment of the invention, the transparent annular region 38 has a width dl of about 3 mm (mm) and the width d2 of the frame 44 is about 2 mm. However, the present invention is not limited thereto. In fact, the width of the transparent annular portion 38 and the frame 44 is determined by the process requirements. . It is worth noting that, as shown in FIG. 4, since the adhesive layer is adhered to the surface of the transparent annular region 38, the present invention can be manually or machined when the photomask 3 is finished or periodically inspected ( For example, an optical microscope) checks the hybridity between the impurity layer 46 and the substrate 32 from the back surface of the mask 3, that is, in the direction indicated by the arrow M, and the degree of adhesion between the _46 and the substrate is good, and the mask is 30 can be made in the transfer of micro-difficult towel. Therefore, if after the manual or machine test, it is found that there is a gap between the rubber shaft 46 and the substrate %, H bubble or the case of no (10), the photomask cover 4G must be separated from the substrate 32, and then The new reticle protective cover 4 〇 is bonded to the substrate 32, and finally the hand or machine H is used to check the adhesion between the scaly layer 46 and the substrate 8 along the direction of the arrow M, and the above surface is used to secure the position. The layer 46 is densely bonded to the substrate (f). Compared with the prior art, the present invention is provided on the bright ring region 38 of the reticle protective cover 4, and the provided daily-shaped region 38 can be used not only as an electrostatic discharge to generate an electrostatic discharge, but also to check the adhesive layer. Whether the bonding with the substrate (10) is defective, so as to ensure that the fresh mask of the reticle 30 is contaminated, and the lie can improve the sputum process to enhance the production of fresh food. 1291079 The above is only the comparison of the present invention. The preferred embodiments, all of which vary and modify the scope of the patent application of the present invention, are intended to be covered by the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top view of a conventional reticle structure. Figure 2 is a schematic cross-sectional view of the reticle structure of Figure 1 taken along line 2-2'. Figure 3 is a top plan view of a reticle in accordance with a preferred embodiment of the present invention. Figure 4 is a schematic cross-sectional view of the reticle shown in Figure 3 taken along line 4-4'. DESCRIPTION OF SYMBOLS 10 Photomask 12 Quartz substrate 12a Photomask pattern area 14 Photomask pattern layer 16 Chrome film 18 Transparent 琢*-like area 20 Photomask protective cover 22 Translucent adhesive film 24 Frame 26 Adhesive layer 30 Photomask 32 Substrate 32a reticle pattern area 32b inner edge area 32c outer edge area 34 reticle pattern layer 36a chrome film 36b chrome film 38 transparent annular region 40 reticle protective cover 42 transparent film 44 frame 46 adhesive layer

Claims (1)

i · 一種光罩結構’該光罩結構包含有: —基板,該基板表面包含有-光罩圖案區以及_透明環狀區, 且該透明環狀區係環繞於該光罩圖案區;以及 -光罩保護蓋,黏合於該透明環狀區且係覆蓋於該光罩圖案區 之上; 其中該透明環狀區係用來檢查該光罩保護蓋與該基板之密合 程度。 、泰如申請專利範圍第i項之光罩結構,其中該透明環狀區係為一 遷明靜電環,用以防止產生靜電放電。 3女如申請專利範圍第i項之光罩結構,其t該光罩保護蓋係包含 有: 一框架,其具有一第一面與一第二面; 一透光膠膜,設於該框架之第一面;以及 —膠黏層’設於該框架之第二面’用以將該光罩保護蓋黏合至 該透明環狀區。 ★申明專利fen第3項之光罩結構,其中該透光膠膜係包含有 確化纖維或含氟高分子。 ^如中料利範圍第3項之光罩結構,其巾該框㈣為一紹框 木,並且該鋁框架係經過陽極處理,以避免反射光線。 11 1291079 」如申請專利範圍第1項之光罩結構,其十該基板表面另包含有 内緣區域,且該内緣區域係位於於該光罩圖案區與該透明環狀 區之間。 7·。如申請專利範圍帛6項之光罩結構,纟中該基板另包含有_外 緣區域,位於該基板表面並環繞該透明環狀區之外。 8·如申請專利範圍第7項之光罩結構另包含有一不透光之第一鉻 膜與一不透光之第二鉻膜,分別設於該内緣區域與該外緣區 表面。 9·如申請專利範圍第1項之光罩結構另包含有一光罩圖案層,設 於該光罩圖案區之表面。 12 1291079 柒、指定代表圖: (一) 本案指定代表圖為:第(三)圖。 (二) 本代表圖之元件代表符號簡單說明: 30 光罩 32 基板 34 光罩圖案層 36a 鉻膜 36b 鉻膜 38 透明環狀區 40 光罩保護蓋 捌、本案若有化學式時,請揭示最能顯示發明特徵的化學式:i. A reticle structure' the reticle structure comprises: a substrate comprising a reticle pattern region and a transparent annular region, and the transparent annular region surrounds the reticle pattern region; a reticle protective cover bonded to the transparent annular region and covering the reticle pattern region; wherein the transparent annular region is used for checking the degree of adhesion of the reticle protective cover to the substrate. The reticle structure of the i-th patent of the patent application, the transparent annular zone is a relocation electrostatic ring to prevent electrostatic discharge. 3 female as claimed in the patent scope of the ii mask structure, the reticle protective cover comprises: a frame having a first side and a second side; a light transmissive film, disposed in the frame a first side; and an adhesive layer 'on the second side of the frame' for bonding the reticle cover to the transparent annular region. ★ Declaring the reticle structure of the patent fen item 3, wherein the light transmissive film comprises a determinized fiber or a fluoropolymer. ^ For example, in the reticle structure of the third item of the material range, the frame (4) is a frame, and the aluminum frame is anodized to avoid reflection of light. 11 1291079. The reticle structure of claim 1, wherein the substrate surface further comprises an inner edge region, and the inner edge region is located between the reticle pattern region and the transparent annular region. 7·. For example, in the reticle structure of claim 6, the substrate further includes an outer edge region located on the surface of the substrate and surrounding the transparent annular region. 8. The reticle structure of claim 7 further comprising an opaque first chrome film and an opaque second chrome film disposed on the inner edge region and the outer edge region, respectively. 9. The reticle structure of claim 1 further comprising a reticle pattern layer disposed on a surface of the reticle pattern area. 12 1291079 柒, designated representative map: (1) The representative representative of the case is: (3). (2) The symbol of the representative figure of this representative figure is a brief description: 30 Photomask 32 Substrate 34 Photomask pattern layer 36a Chromium film 36b Chromium film 38 Transparent ring area 40 Photomask protection cover, if there is a chemical formula in this case, please reveal the most A chemical formula that shows the characteristics of the invention:
TW93111794A 2004-04-27 2004-04-27 Photomask TWI291079B (en)

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TWI291079B true TWI291079B (en) 2007-12-11

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