1226971 玖、發明說明： 【發明所屬之技術領域】 本發明係關於在光微影技術中用於圖案轉印的光罩及 其素材原版的光罩毛胚。 【先前技術】 光罩係藉由首先通過在精密研磨石英玻璃等而得到的 透光性基板（研磨步驟）的主表面進行濺鍍等，形成例如鉻 為主成份的遮光膜（成膜步驟），塗敷光阻膜於所形成的遮 光膜上（塗敷步驟），選擇性將光所塗敷的光阻膜曝光（曝光 步驟），將所曝光的光阻膜顯像的同時進行蝕刻處理，以圖 案加工遮光膜（蝕刻步驟）所製成。在此，將經由上述成膜 步驟所得到的光罩的中間生成物，亦即素材原版稱為光罩 毛胚。 但是，無論是光罩還是光罩毛胚，均有在各步驟間作搬 運時等，因把持透光性基板的外周部及側面部而容易剝落 形成於其欲把持部分的遮光膜的問題。在遮光膜被剝落的 情況，若其剝離物作為粉粒黏附於遮光膜圖案上時，便會 於該圖案上產生遮光膜殘留等的缺陷，另外，為除去該剝 離物則無法避免光罩或毛胚的洗淨次數的增加。 在此，利用在光罩的外周部不形成遮光膜，以減低把持 時所產生的遮光膜的剝離物（粉粒）的技術，已廣為所知（參 照專利文獻1、2 )。此等技術可適用於將矽晶圓等作為處 理對象的光微影技術中所使用的光罩。 另一方面，上述技術對於在曝光步驟中使用電子束以形 5 312/發明說明書(補件)/93-02/92134011 1226971 成微細的遮罩圖案的毛胚並不適用。這是因為尤其是在描 繪微細圖案的情況，在上述曝光步驟雖進行電子束描繪， 但在使用電子束描繪微細的圖案時，為防止該電子束引起 的基板的電荷上升’而有必要在毛胚的外周部也以具有導 電性的遮光膜以便可導電（設置導通接腳）的緣故。 例如，在用於液晶顯示器等的顯示裝置的製造的光罩 中，伴隨著該顯示裝置的高精細化等，要求圖案的微細化， 在上述光罩的製造過程中，在上述曝光步驟中，現實情況 是進行電子描繪。 (專利文獻1 ) 曰本專利特開昭6 0 - 1 9 4 4 4 6號公報（參照第2頁及圖1 ) (專利文獻2 ) 曰本專利特公平3 - 3 4 0 5 0號公報（參照第2、3頁及圖2 ) 【發明内容】 但是，用於液晶顯示器等的顯示裝置的製造的光罩，近 年來，隨著圖案高精度化的深入，有伴隨著顯示晝面的大 面積化而逐漸大型化的趨勢，遮罩越為大型，則其越厚而 且重，因此使得剝離物的產生的問題越發嚴重。也就是說， 大型遮罩在處理時，具有使用夾住其外周部的夾具牢固予 以保持的情況，遮罩越重則與夾具的接觸部，亦即施加於 外周部的荷重也越大，因此該部分的遮光膜變得容易剝落。 另外，不僅是基板的表面，也可考慮藉由將基板的側面 作鏡面研磨，使成膜時繞於側面部而形成的遮光膜的附著 力增加，以減低遮光膜的剝離的方法，在半導體製造用的 6 312/發明說明書(補件)/93-02/92134011 1226971 光罩中，在基板的側面部施以鏡面研磨已被實用化。但是， 在顯示裝置用等的大型遮罩中，具有在側面部進行曝光裝 置（遮罩對準器）的光罩檢測的例子，若基板的側面部為鏡 面部時則有無法檢測反射光的問題，及在以人手取用基板 而把持基板的側面部時，因為基板的重量重（約1 k g〜 1 5 k g )，若基板的側面部為鏡面部時則有滑落下的危險增加 的問題，因此，必須要求側面部為一粗面。因此，在大型 光罩中具有側面部的遮光膜容易被剝落的狀況。 如上述的產生剝離物的問題，在近年來要求形成為高精 度的圖案的大型毛胚中尤其嚴重。 在此，本發明之目的在於，提供一種在取用形成大型且 微細的光罩圖案的毛胚或使用該毛胚所製造的光罩時，可 防止剝離物等的粉粒產生的技術。 根據本發明，提供一種光罩毛胚，其係僅於透光性基板 主表面上之除了外緣以外的部分上形成遮光膜，將該外緣 部作為遮光膜之未成膜區域而成者，其特徵為：上述透光 性基板的尺寸，一邊為3 0 0 (in m )以上，同時，上述未成膜 區域的寬度為3(mm)以上。 在本發明之光罩毛胚中，最好上述遮光膜係使用雷射描 繪以進行圖案加工。 另外，在本發明之光罩毛胚中，對於上述透光性基板側 面部的表面粗縫度（Ra)為0.05〜0.3// πι的粗面，尤其有 效。 另外，根據本發明，即可提供一種使用上述光罩毛胚來 7 312/發明說明書(補件)/93-02/92134011 1226971 製造的光罩。 【實施方式】 圖1顯示本實施形態之光罩毛胚。該光罩毛胚係僅於透 光性基板1主表面上之除了外緣1 S以外的部分上形成遮光 膜2，將該外緣部1 S作為遮光膜2的未成膜區域者。 透光性基板1對於曝露光實質透明的基板。該透光性基 板1係為俯視形成為矩形形狀或正方形形狀，其尺寸為一 邊為3 0 0 ( m m )以上，亦即，在矩形形狀或正方形形狀的四 邊中，至少相對面的二邊為300(mni)以上。又，對各邊為 3 0 0 ( m m )以上，亦即，在矩形形狀或正方形形狀的四邊中， 四邊全為300(mni)以上的大型光罩，更為有效。如此的大 型光罩最為適用於例如液晶顯示裝置等的製造。具體而 言，透光性基板1的尺寸可為330x 450(mm)、390x 610(mm)、5 Ο 0 x 750(mm)、520χ 800(mm) » 或此以上。 又，對透光性基板1的厚度並無特別的限定，如本發明 之光罩要求高平坦度的高精度遮罩用的基板及尺寸大的基 板，具有較厚的傾向。作為一實施例，設定透光性基板1 的厚度為5〜15(mm)。1226971 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a photomask used for pattern transfer in photolithography technology and a photomask blank of an original plate of the material. [Prior Art] A photomask is formed by first sputtering a main surface of a light-transmitting substrate (polishing step) obtained by precision polishing of quartz glass or the like to form a light-shielding film containing chromium as a main component (film-forming step). , Coating a photoresist film on the formed light-shielding film (coating step), selectively exposing the light-coated photoresist film (exposure step), and performing an etching process while developing the exposed photoresist film , Made by patterning the light-shielding film (etching step). Here, the intermediate product of the photomask obtained through the above-mentioned film forming step, that is, the original material is called a photomask blank. However, both the photomask and the photomask blank have the problem that the light-shielding film formed on the portion to be held is easily peeled off when the outer peripheral portion and the side portion of the light-transmitting substrate are held during transportation, etc. When the light-shielding film is peeled off, if the peeling matter adheres to the light-shielding film pattern as powder particles, defects such as residual light-shielding film will be generated on the pattern. In addition, in order to remove the peel-off, a photomask or The number of times the hair embryos are washed is increased. Here, a technique is known in which a light-shielding film is not formed on the outer peripheral portion of a photomask to reduce peeling (powder) of the light-shielding film generated during gripping (see Patent Documents 1 and 2). These techniques can be applied to a photomask used in a photolithography technology in which a silicon wafer or the like is a processing target. On the other hand, the above-mentioned technique is not applicable to a blank that is shaped into a fine mask pattern using an electron beam in the exposure step 5 312 / Invention Specification (Supplement) / 93-02 / 92134011 1226971. This is because, especially when drawing a fine pattern, although electron beam drawing is performed in the above-mentioned exposure step, when drawing a fine pattern using an electron beam, it is necessary to prevent the increase of the charge on the substrate caused by the electron beam. The outer peripheral part of the embryo is also provided with a conductive light-shielding film so as to be conductive (providing a conductive pin). For example, in a photomask used for the manufacture of a display device such as a liquid crystal display, the pattern is required to be miniaturized along with the high definition of the display device. In the photomask manufacturing process, in the exposure step, The reality is electronic drawing. (Patent Document 1) Japanese Patent Laid-Open No. 6 0-1 9 4 4 4 6 (refer to page 2 and Fig. 1) (Patent Document 2) Japanese Patent Laid-open No. 3-3 4 0 5 0 (Refer to pages 2, 3 and FIG. 2) [Summary of the Invention] However, in recent years, photomasks used for the manufacture of display devices such as liquid crystal displays have been accompanied by the display of daylight surfaces as the accuracy of patterns has increased. The larger the area becomes, the larger the size of the mask becomes. The larger the mask becomes, the thicker and heavier it becomes. Therefore, the problem of the occurrence of peeling becomes more serious. That is to say, a large-sized mask may be held firmly by a jig that grips its outer periphery during processing. The heavier the mask is, the more the contact part with the jig, that is, the larger the load applied to the outer periphery, so The part of the light-shielding film becomes easily peeled. In addition, not only the surface of the substrate, but also a method of reducing the peeling of the light-shielding film in semiconductors by increasing the adhesion of the light-shielding film formed around the side surface during film formation by mirror-polishing the side surface of the substrate can be considered. In 6 312 / Invention Manual (Supplement) / 93-02 / 92134011 1226971 for manufacturing, a mirror polishing is applied to the side surface of the substrate, which has been put into practical use. However, in large masks such as display devices, there are examples in which mask detection by an exposure device (mask aligner) is performed on a side portion, and if the side portion of the substrate is a mirror surface portion, it is impossible to detect reflected light. The problem is that when the substrate is held by the human hand and the side surface of the substrate is held, the substrate is heavy (about 1 kg to 15 kg). If the side surface of the substrate is a mirror surface, there is an increased risk of slipping and falling. Therefore, it is required to have a rough side surface. Therefore, in a large-scale mask, a light-shielding film having a side portion is easily peeled off. As described above, the problem of occurrence of peeling is particularly serious in large hair blanks which are required to be formed into a pattern with high accuracy in recent years. It is an object of the present invention to provide a technique for preventing the generation of particles such as peeling off when taking a blank that forms a large and fine mask pattern or a mask manufactured using the blank. According to the present invention, there is provided a photomask blank formed by forming a light-shielding film only on a portion other than an outer edge on a main surface of a light-transmitting substrate, and using the outer edge portion as an unfilmed area of the light-shielding film. It is characterized in that the size of the transparent substrate is 300 (in m) or more on one side, and the width of the non-film-formed region is 3 (mm) or more. In the photomask blank of the present invention, it is preferable that the light-shielding film is patterned using laser drawing. Further, in the photomask blank of the present invention, a rough surface having a surface roughness (Ra) of 0.05 to 0.3 // m of the surface of the transparent substrate-side surface portion is particularly effective. In addition, according to the present invention, it is possible to provide a photomask manufactured using the above photomask blank 7 312 / Invention Specification (Supplement) / 93-02 / 92134011 1226971. [Embodiment] Fig. 1 shows a mask blank of this embodiment. This photomask germ line forms a light-shielding film 2 only on a part of the main surface of the light-transmitting substrate 1 except for the outer edge 1 S, and the outer edge portion 1 S is used as an unfilmed area of the light-shielding film 2. The translucent substrate 1 is a substrate that is substantially transparent to light exposure. The translucent substrate 1 is formed in a rectangular shape or a square shape in a plan view, and has a size of 300 (mm) or more on one side, that is, at least two sides of the opposite sides of the four sides of the rectangular or square shape are 300 (mni) or more. In addition, it is more effective for a large-sized mask with each side of 300 (m m) or more, that is, a rectangular mask or a square-shaped four sides in which all four sides are 300 (mni) or more. Such a large photomask is most suitable for the manufacture of, for example, a liquid crystal display device. Specifically, the size of the light-transmitting substrate 1 may be 330x450 (mm), 390x610 (mm), 500x750 (mm), 520x800 (mm) »or more. The thickness of the light-transmitting substrate 1 is not particularly limited. For example, the substrate for a high-precision mask and a substrate having a large size, which require high flatness, of the photomask of the present invention tend to be thicker. As an example, the thickness of the translucent substrate 1 is set to 5 to 15 (mm).
另外，透光性基板1主表面上之未成膜區域1 S的寬度 A(參照圖2)為3(mm)以上，最好為5(mm)，也可為此以上。 但是，未成膜區域1 S的寬度A係以設為該未成膜區域1 S 未重疊使用該毛胚所製造的光罩的所謂描繪保證區域的值 為佳。具體而言，在描繪保證區域為從透光性基板1的外 端面除去1 0 ( m m )的區域的情況，則未成膜區域1 S的寬度A 8 312/發明說明書(補件)/93-02/9213401 ] 1226971 最好為1 Ο ( m m )以下。 又，在一實施例中，令未成膜區域1 S的寬度A為5 土 1 ( m m ) 〇 遮光膜2為實質遮蔽曝露光者，例如，可使用鉻等的金 屬來構成。又，該遮光膜也可為具有包含反射防止層或半 透光層等的多層構造或連續層構造者，該情況，係指此等 所有層包含在内為遮光膜2。該遮光膜2係使用依雷射描 繪裝置的雷射描繪以進行圖案加工。也就是說，該光罩毛 胚為雷射描繪用者。 以下，說明該光罩毛胚的製造方法，及使用該毛胚的光 罩的製造方法。 (研磨步驟） 首先，在精密研磨石英玻璃等後進行倒角，得到縱向 3 0 0 ( m m )以上，橫向3 0 0 ( m m )以上的俯視為四角徑的透光性 基板1。在此，無特別在透光性基板1的側面部（端面1T 及倒角部1 C )進行精研磨加工的必要，也可為粗面（參照圖 2 )。即使端面1 T及倒角部1 C為粗面，因為此等的部分未 形成遮光膜2，因此仍無該遮光膜2被剝離而黏附於光罩 圖案加工面的問題。又，考慮到以手把持時的滑動難易度， 基板的側面部、尤其是端面，其表面粗糙度（R a )最好為 0·05//ηι以上的粗面，尤佳為以上，最佳為0.15 // m以上。另外，若基板的侧面部過粗時，有隱藏埋設於 溝内的粉粒於洗淨時等產生的問題。考慮到該點，基板的 側面部、尤其是端面，其表面粗糙度（R a )最好為0 . 3 μ m 9 312/發明說明書(補件)/93-02/92134011 1226971 以下的粗面，尤佳為Ο . 2 5 // m以下，最佳為Ο . 2 μ m以下。 為得到表面粗糙度（R a )為Ο . Ο 5〜Ο . 3 // m的側面部，可藉由 控制研磨方法來進行，例如，在鑽石工具（埋設有指定粗度 的鑽石顆粒的輪狀的研磨砂輪）中，藉由使用# 7 0 0〜# 2 4 0 0 的顆粒度的鑽石工具的研磨便可獲得。 又，倒角部1 C的寬度B (參照圖2 )，例如可為0 . 3 (in m )〜 1 . 3 ( m m ) 〇 (成膜步驟） 接著，僅於所得到的透光性基板1主表面上之除了外緣 1 S以外的區域上形成遮光膜2。在此所稱的外緣1 S係為包 含上述端面1 T及倒角部1 C的區域。 遮光膜2的形成可使用濺鍍處理。濺鍍也可在藉由未圖 示的框狀的保持元件遮蔽未成膜區域1 S的狀態，以保持該 透光性基板1的狀態來進行。藉此，因為在藉由透光性基 板1的主表面上的框狀保持元件所遮蔽的區域，未附著濺 射靶子的顆粒，因此可將該區域設為未成膜區域1 S。此 時，以成膜面（主表面）面向下方的方式保持透光性基板 1，便可減低粉粒對該成膜面的黏附的問題。 另外，藉由使用具導電性者作為該框狀保持元件，在該 框狀保持元件採用濺鍍成膜時的接地，便可防止異常放 電。在此，因為將未成膜區域1 S的寬度A設為3 ( m m)以上， 因此可與此對應將框狀保持元件的寬度設為3 ( m m )以上。 藉此，因為在濺鍍時可充分確保接地，因此可確實避免異 常放電，其結果有可提高良率的效果。 10 312/發明說明書(補件)/93-02/9213401】 1226971 經由以上的步驟，完成本實施形態之光罩毛胚。 (塗敷步驟） 接著，藉由旋塗法等塗敷光阻膜於所形成的遮光膜2 上。在此所使用的光阻，係為雷射描繪用的光阻，作為具 體例，可列舉長瀨產業公司製的N P R 3 5 1 0 P G等。 (曝光步驟） 接著，在將所塗敷的光阻烘烤後，藉由雷射描繪選擇性 進行曝光。此時的雷射描繪無如電子束描繪般在真空中進 行的必要，而可在空氣中進行，因此，具有不使用大型裝 置便可的優點。又，在此所使用的雷射描繪裝置，作為具 體例，可列舉Μ I C R Ο N I C公司製的L R S等。 (蝕刻步驟） 接著，將所曝光的光阻膜顯像以形成光阻圖案，將該光 阻圖案作為遮罩以蝕刻處理遮光膜2，形成遮光膜圖案。 然後，除去該光阻膜圖案，其後，施以指定的洗淨以完成 本實施形態的光罩。 根據本實施形態，可獲得如下的效果。 (1 )本實施形態之光罩毛胚，藉由使用雷射描繪，可避 免習知的電子束描繪的電荷上升的問題，因此，即使在尺 寸上，一邊為300(mm)以上的大型裝置，同時，未成膜區 域1 S的寬度A為3 ( mm)以上，仍無任何的障礙。 (2)因為大型的光罩毛胚或光罩（以下稱為光罩等）的重 量也重，在必須於搬運時等牢固保持此時，藉由將遮光膜 2的未成膜區域1 S的寬度A設為3 ( m m )以上，即使在以人 11 312/發明說明書(補件)/93-02/92 Π40 Π 1226971 手等把持端面1 T及倒角部1 C、1 C的狀態搬送該光罩 情況，仍可確實避免該人手等接觸於遮光膜2的情況 此，可確實防止遮光膜2的剝離的問題。 (3 )另外，即使在使用不僅保持透光性基板1的端i 及倒角部1 C、1 C還保持外緣部1 S的保持元件來搬送 罩等的情況，仍可充分確保該保持部分為3 ( mm)以上 此，可確實防止遮光膜2的剝離的問題，同時，可穩 牢固保持大型且重的光罩等。 (4 )如上述，藉由防止遮光膜2的外緣部分的剝離 除去微小異物（粉粒）的產生源，可防止異物黏附於光 的光罩圖案面，可良率很好地製造無缺陷的光罩。藉 本發明之光罩等，為尤其將其遮罩圖案執行微細而嚴 缺陷檢查者，另外，因遮罩尺寸非常大的緣故，也招 陷的產生率變高，因此較為適用於作為例如TFT (薄膜 體）的製造用的遮罩。 (5 )另外，因為可減低除去習知必須會有的異物用ί 罩等的洗淨次數，因此可提高該光罩等的製造的執行 又，在本實施形態中，作為透光性基板1例示了矩 板，但該透光性基板也可為正方形基板。 (產業上的可利用性） 根據本發明，在取用要求大型且微細圖案的光罩毛 時，可防止粉粒的產生。 【圖式簡單說明】 圖1為顯示本實施形態之光罩毛胚的模式圖，圖1 312/發明說明書(補件)/93-02/92134011 等的 。因 1 1Τ 該光 ，因 定而 以 罩等 此， 格的 致缺 電晶 i光 率。 形基 胚 :a) 12 1226971 為俯視圖，圖1 ( b )為剖視圖。 圖2為顯示本實施形態之光罩毛胚的外緣部的模式放大 圖。 (元件符號說明） 1 透光性基板 1C 倒角部 1 S 外緣（未成膜區域） 1 T 端面 2 遮光膜 A 未成膜區域1 S的寬度 B 倒角部1 C的寬度 13 312/發明說明書(補件)/93-02/92134011The width A (see FIG. 2) of the non-film-formed region 1 S on the main surface of the translucent substrate 1 is 3 (mm) or more, preferably 5 (mm), or more. However, the width A of the non-film-formed region 1 S is preferably a value of a so-called drawing-guaranteed region in which the photo-mask made by using the blank is not overlapped with the non-film-formed region 1 S. Specifically, in the case where the guaranteed region is drawn as a region where 10 (mm) is removed from the outer end surface of the light-transmitting substrate 1, the width A of the unfilmed region 1 S A 8 312 / Invention Specification (Supplement) / 93- 02/9213401] 1226971 It is best to be less than 10 (mm). In one embodiment, the width A of the unfilmed region 1 S is 5 to 1 (m m). The light-shielding film 2 is a material that substantially shields light from exposure. For example, it can be made of a metal such as chromium. The light-shielding film may have a multilayer structure or a continuous layer structure including an anti-reflection layer, a semi-light-transmitting layer, and the like. In this case, the light-shielding film 2 is included in all layers. This light-shielding film 2 is patterned using laser drawing by an laser drawing device. In other words, the mask embryo is a laser drawing user. Hereinafter, a method for manufacturing the photomask blank and a method for manufacturing the photomask using the photomask will be described. (Polishing step) First, chamfering is performed after precision grinding of quartz glass or the like to obtain a light-transmitting substrate 1 having a square shape in a plan view with a length of 300 (m m) or more and a width of 300 (m m) or more. Here, it is not necessary to perform a fine polishing process on the side surface portion (the end surface 1T and the chamfered portion 1 C) of the light-transmitting substrate 1, and it may be a rough surface (see FIG. 2). Even if the end face 1 T and the chamfered portion 1 C are rough, since the light-shielding film 2 is not formed in these portions, there is no problem that the light-shielding film 2 is peeled off and adheres to the mask pattern processing surface. In addition, considering the ease of sliding when held by a hand, the surface roughness (R a) of the side surface portion, especially the end surface of the substrate, is preferably a rough surface having a thickness of 0.05 or more, and more preferably, It is preferably 0.15 // m or more. In addition, if the side surface portion of the substrate is too thick, there is a problem that the powder particles buried in the groove are hidden during cleaning. Taking this into consideration, it is preferable that the surface roughness (R a) of the side surface portion, especially the end surface, of the substrate is 0.3 μm 9 312 / Invention Specification (Supplement) / 93-02 / 92134011 1226971 or less , Particularly preferably 0. 2 5 // m or less, and most preferably 0. 2 μ m or less. In order to obtain a side surface with a surface roughness (Ra) of 0. 〇 5 to Ο. 3 // m, it can be performed by controlling the grinding method, for example, in a diamond tool (a wheel embedded with diamond particles of a specified thickness). In the shape of a grinding wheel, it can be obtained by grinding using a diamond tool with a particle size of # 7 0 0 to # 2 4 0 0. The width B (see FIG. 2) of the chamfered portion 1 C may be, for example, 0.3 (in m) to 1.3 (mm) 〇 (film formation step). Next, only the obtained transparent substrate is obtained. A light-shielding film 2 is formed on a region other than the outer edge 1 S on the main surface. The outer edge 1 S referred to herein is a region including the aforementioned end face 1 T and the chamfered portion 1 C. The light-shielding film 2 can be formed by a sputtering process. Sputtering can also be performed in a state where the unfilmed region 1 S is shielded by a frame-shaped holding element (not shown), and the light-transmitting substrate 1 is held. Thereby, since the area shielded by the frame-shaped holding element on the main surface of the light-transmitting substrate 1 is not adhered with the particles of the sputtering target, this area can be set as the unfilmed area 1S. At this time, by holding the light-transmitting substrate 1 with the film-forming surface (main surface) facing downward, the problem of adhesion of particles to the film-forming surface can be reduced. In addition, by using a conductive member as the frame-shaped holding member, grounding when the frame-shaped holding member is sputter-formed can prevent abnormal discharge. Here, since the width A of the unfilmed region 1 S is set to 3 (m m) or more, the width of the frame-shaped holding element can be set to 3 (m m) or more accordingly. Thereby, since the ground can be sufficiently ensured during sputtering, abnormal discharge can be reliably prevented, and as a result, the yield can be improved. 10 312 / Invention Specification (Supplement) / 93-02 / 9213401] 1226971 After the above steps, the photomask blank of this embodiment is completed. (Coating Step) Next, a photoresist film is coated on the formed light-shielding film 2 by a spin coating method or the like. The photoresist used here is a photoresist for laser drawing, and specific examples include N P R 3 5 1 0 P G manufactured by Nagase Industry Co., Ltd. and the like. (Exposure step) Next, the applied photoresist is baked and then selectively exposed by laser drawing. Laser drawing at this time does not need to be performed in a vacuum like electron beam drawing, but can be performed in the air. Therefore, there is an advantage that a large-sized device can be used without using a large-scale device. The laser drawing device used here includes, as a specific example, L R S manufactured by M I C R 0 N I C. (Etching step) Next, the exposed photoresist film is developed to form a photoresist pattern, and the photoresist pattern is used as a mask to etch the light-shielding film 2 to form a light-shielding film pattern. Then, the photoresist film pattern is removed, and thereafter, a predetermined cleaning is performed to complete the photomask of this embodiment. According to this embodiment, the following effects can be obtained. (1) The mask blank of this embodiment can avoid the problem of the increase in the charge of the conventional electron beam drawing by using laser drawing. Therefore, even in size, a large device with a side of 300 (mm) or more At the same time, the width A of the unfilmed area 1 S is 3 (mm) or more without any obstacle. (2) The large photomask blanks or photomasks (hereinafter referred to as photomasks) are also heavy, and must be held firmly during transportation, etc. At this time, the unformed area 1 S of the light-shielding film 2 The width A is set to 3 (mm) or more, even if the end face 1 T and the chamfered portion 1 C, 1 C are transported with a hand 11 312 / Invention Manual (Supplement) / 93-02 / 92 Π40 Π 1226971 In the case of the photomask, the situation where the human hand or the like comes into contact with the light-shielding film 2 can be reliably avoided, and the problem of peeling of the light-shielding film 2 can be reliably prevented. (3) In addition, even when a cover or the like is transported using a holding element that holds not only the end i and the chamfered portions 1 C and 1 C of the light-transmitting substrate 1 but also the outer edge portion 1 S, the holding can be sufficiently ensured. The part is 3 (mm) or more, so that the problem of peeling of the light shielding film 2 can be reliably prevented, and at the same time, a large and heavy photomask can be firmly held. (4) As described above, by preventing peeling of the outer edge portion of the light-shielding film 2 to remove the source of minute foreign matter (powder particles), the foreign matter can be prevented from adhering to the photomask surface of the light, and the defect-free production can be performed with good yield. Mask. The mask and the like of the present invention are particularly useful for inspecting fine and severe defect patterns of the mask pattern, and because the mask size is very large, the occurrence rate of trapping is also increased, and therefore it is more suitable for use as, for example, a TFT. (Film body) A manufacturing mask. (5) In addition, it is possible to reduce the number of times of washing with a mask or the like, which is necessary to remove conventional foreign matter, so that the manufacturing execution of the mask and the like can be improved. In the present embodiment, it is used as the translucent substrate 1 The rectangular plate is exemplified, but the translucent substrate may be a square substrate. (Industrial Applicability) According to the present invention, it is possible to prevent generation of particles when taking mask hairs requiring large and fine patterns. [Brief Description of the Drawings] FIG. 1 is a schematic diagram showing a mask blank of this embodiment, and FIG. 1 312 / Invention Specification (Supplement) / 93-02 / 92134011 and the like. Because the light is 1 1T, and so on, it is covered by the cover, which causes a shortage of the photometric efficiency of the transistor. Basal embryo: a) 12 1226971 is a top view, and Fig. 1 (b) is a sectional view. Fig. 2 is a schematic enlarged view showing an outer edge portion of a mask blank of this embodiment. (Description of Element Symbols) 1 Transparent substrate 1C chamfered part 1 S outer edge (unformed area) 1 T end face 2 light-shielding film A unformed area 1 S width B chamfered part 1 C width 13 312 / Instruction Manual (Supplement) / 93-02 / 92134011