200535567 玫、發明說明： 【發明所屬之技術領域】 本發明係”光罩結構，制是指—種可以檢查光罩保講宴與 基板之密合程度以及避免產生靜電放電的光罩結構。 【先前技術】 為了在半導體晶片上形成-設計的積體電路(integrated ⑽U1ts)，目前醉導體餘均是絲作複數個鮮並在各光罩上分 卿成-設計的佈關範ayQut)，雜再#由郷製程來將各光^ 上的圖案以-定的比例逐次轉移到半導體晶片表面的各光阻層上 而將70整之積體電路的佈局圖案綱地製作在♦導體晶#上。因此， 為了將積體電路的佈局醜精確地轉移至轉體晶#上， 製作與保護便是一相當重要的關鍵技術。 ，〃、 請^圖-與圖二，圖一為習知之光罩結構的上視圖，而圖二係 切線2—2,之剖面示意圖。如圖—與圖二所示，光罩 區t3 $的石*基板12，並且基板12表面包含有-光罩圖案 i η心t 圖案層14設置於光罩圖案區12a表面。此外，光 ί另匕3有一鉻膜16，設於基板12表面並環繞於光罩圖案層14之 …’以及:透明環狀區18，位於鉻膜16之内。其中，光罩圖案 係為-由複數個透光區與不透光區所組成之佈局圖案，盆制來^ 而^光的鉻膜16則是用來阻擋非必要之光線。心 ===17不具有任何絡金屬，其是用來作為—絕緣的靜電環 =6電”避免则上的靜電傳導至光罩=二 產生於電放電亚導致線路圖案失真或損毀。 200535567 /另-方面’光罩10還包含有—光罩保護蓋(pellide)2Q，覆蓋於 光罩圖案14上方’用以防止灰塵等不潔物附著於光罩圖案14上。一 般而言，光罩髓蓋20係包含有—透光雜(transp_t film)22， 一用以支撐透光膠膜22之框架（f麵)24，以及-膠黏層（麵ting adheS1Ve)26，用來將框架24黏合至基板12之上，並且透光膠膜以 通常也是經由-膠黏層（未顯示）_合至框架24上。必須注意的是， 膠黏層26與基板12之間必須完全地密合，才可有效地防止灰塵附著 於光罩随14上’否縣膠麵26的寬度太細、献獅層部絲 板12之間具有絲或氣泡，顺塵或殘料容胃經域體流動而進入 光^保護蓋2G與基板12之間，並附著於光罩随層14上，因而影響 後續的微影製程之可靠性。例如，當—微粒附著於光罩_層14内之 透光區b ’微純程之圖轉移過程便可能轉移該微粒之圖案於晶片 上，因而造成晶片圖案錯誤。 再者，如圖-所示，由於習知光罩保護蓋2〇之膠黏層26都是黏貼 於不透光的賴16表面上，目此在進行製紅前，·技術並無 法事先檢查麵層26與基板12之間是否具有縫隙、或是密合不佳的 情形，往往都是產品出酬題後，才會魏光罩iq具有 僅降低產品良率更是浪費成本。 【發明内容】 本發明的目的是提供-種光I結構，萌決前述問題。 依據本發明之目的，本發明的較佳實施㈣提供—種光_ 一 Γ基板，—設於該透明絲表面的光罩圖案層，1於ί 透明基板表面並環繞該光罩圖案層的透明靜電環，—覆蓋於=岡亥 案層^上的光罩保護蓋，以及1來黏合該光罩保護蓋與該透二 環的絲層’其巾該透嘯電環_來檢查該移倾蓋與該基板: 200535567 岔合程度，以及防止產生靜電放電 财=本發明係Ϊ該雜雜合㈣翻靜«上，該_靜電環不 僅可用來防止產生靜電放電，更可用來檢查誃 盥 間的接合是否具有缺陷，以確伴兮先罩伤:二乡"1 3"、μ透月基板之 隹保°亥光罩係不會遭受灰塵等不潔物之、、兮 染，進而可提高微影製程的可靠性並提昇產品良率。 ，、物之5 【實施方式】 FI it考圖二細四，圖三係為本發日她佳實補之鮮上視圖，而 圖四係為圖三所示之光罩沿切線4_4 ’之剖面示意圖。如圖三與圖四所 =’先罩30係包含有-基板32 ’通常基板32必須是由高度透光且絕 ^的材質所構成’例如石英，並且基板32之表面包含有—光罩圖幸區 32二-圍繞於光罩圖龍孤之崎區域32b、以及—圍繞於内緣區 域32b外侧之外緣區域32c。此外，光罩3〇另包含有一設於光罩圖案 區32a表面之光罩圖案層34，一設於内緣區域娜表面之絡膜施， —設於外緣區域咖表面之鉻膜36b，以及—位於鉻膜施與鉻膜娜 的透明環狀區38。其中，光罩_層34係為—由複數個透光區、 $透光區、不透光區或她籠触成之佈局随，其偏來進行圖 案之轉移，而鉻膜36a肖36b則是用來阻擔非必要之光線，並且透明 環狀區38内不具有任何鉻金屬，其伽來作為—絕緣的靜電環，以絕 緣鉻膜36a與36b ’並防止靜電放電之產生。一般而言，光罩圖案層 34、鉻膜36a與36b、與透明環狀區38係可同時形成，而其製作方法 係先沉積-鉻金屬秋基板32的絲，織再_—_製輯祕 金屬層進行钱刻’便可形成光罩圖案層34、鉻膜36讀、以及透 明環狀區38。 安除此之外，光罩30還包含有一光罩保護蓋4〇，其係覆蓋於光罩圖 案34上方，用以防止灰塵等不潔物附著於光罩圖案^上。並且光罩 12 200535567 保護蓋40主要係由一透光膠膜42、一框架44、與一膠黏層46構成， 其中透光膠膜42係為一高度透光的膠膜，例如確化纖維 (nitrocellul〇se，NC)或含氟高分子（fiu〇r〇p〇lyme〇，並且透光膠膜 42通常也是經由一膠黏層（未顯示）而黏合至框架44上。此外，框架、 44是用來支撐透光膠膜42並係為一鋁框架，而且鋁框架私係經過^ 極處理)因此可避免反射光線。另一方面，膠黏層犹係設於框架私 上j其係用來將框架44黏合至基板32之透明環狀區38上，以使光罩 保護蓋40可覆蓋住整個光罩圖案34。此外，透明環狀區％的寬度以 必須大於框架44的寬度d2，减膠歸46可_於透明環狀區38的 表面上，在本發明之較佳實施例中，透明環狀區38的寬度dl約為3 毫米（_)，而框架44的寬度d2約為2毫米，然而本發明並不限於 事實上，透明環狀區38與框架44的寬度係可視製程需要而定。 注意的是，如圖四所示，由於膠黏層46係黏附於透明環狀區 的表面上，因此本發明係可於光㈣製作完成或定期檢查時，利用 如光學顯微鏡）由光罩30背面，亦即沿箭賴所指之 ^層46與基板32之間的黏合情況，若膠黏層46與基板32 s ⑴口私度j土’則光罩3〇便可使用於微影製程中的圖案轉移。但 ΐ古㈣人^機器的檢測之後，發現膠黏層46與基板32之間 32八^ I包或是密合不佳的情开知則必須將光罩保護蓋40與基板 人:戈機再將新的光罩保護蓋4〇黏合至基板32±，最後再利用 二Ϊ Γ、前頭M，所指之方向檢查膠黏層46與基板32之間的黏 …亚*上逃步驟以確保膠黏層46與基板％之間係緊密黏合。 明環白^技術，本發明係將光罩保護蓋4〇之膠黏層46黏合於透 產生靜i放電，更=透^環狀區38不僅可用來作為靜電環，以防止 46 32 污染，進而可提古心㉟光罩圖案層34係不會遭受灰塵等不潔物之 美阿U衫I程的可靠性並提昇產品良率。 13 200535567 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做 之均等變化與修飾，皆應屬本發明專利之涵蓋範圍。 【圖式簡單說明】 圖式之簡單說明 圖一為習知之光罩結構的上視圖。 圖二係為圖一之光罩結構沿切線2-2’之剖面示意圖。 圖三係為本發明較佳實施例之光罩上視圖。 圖四係為圖三所示之光罩沿切線4-4’之剖面示意圖。 圖式之符號說明 10 光罩 12 石英基板 12a 光罩圖案區 14 光罩圖案層 16 鉻膜 18 透明環狀區 20 光罩保護蓋 22 透光膠膜 24 框架 26 膠黏層 30 光罩 32 基板 32a 光罩圖案區 32b 内緣區域 32c 外緣區域 34 光罩圖案層 36a 鉻膜 36b 鉻膜 38 透明環狀區 40 光罩保護蓋 42 透光膠膜 44 框架 46 膠黏層 14200535567 Description of the invention: [Technical field to which the invention belongs] The present invention is a "photomask structure," which refers to a photomask structure that can check the closeness of the photomask banquet and the substrate and avoid electrostatic discharge. Prior technology] In order to form and design integrated circuits (U1ts) on semiconductor wafers, the current drunk conductors are all made of silk and are divided into various designs on each photomask. Then, the pattern on each light ^ is transferred to the photoresist layer on the surface of the semiconductor wafer in a fixed ratio by a process, and the layout pattern of the 70 integrated circuit is made on the conductor crystal # Therefore, in order to accurately transfer the layout of the integrated circuit to the turning body crystal #, production and protection is a very important key technology., 〃, please ^ Figure-and Figure 2, Figure 1 is the light of knowledge A top view of the mask structure, and a schematic cross-sectional view of the second line of tangent line 2-2. As shown in FIG. 2 and FIG. 2, the mask area t3 $ of the stone * substrate 12 and the surface of the substrate 12 includes a mask pattern i η 心 t pattern layer 14 is provided in the mask pattern area 12 a surface. In addition, the light 3 has a chrome film 16 provided on the surface of the substrate 12 and surrounds the reticle pattern layer 14... and a transparent annular region 18 located within the chrome film 16. Among them, the reticle The pattern is a layout pattern composed of a plurality of transparent and opaque areas. The chrome 16 made of light is used to block unnecessary light. The heart === 17 does not have any It is used to protect metal, which is used as an insulating electrostatic ring = 6 electricity. ”To avoid the conduction of the static electricity on the photomask = 2, it is caused by electric discharge, which causes distortion or damage to the circuit pattern. 200535567 / Another aspect-The photomask 10 also includes a pellide 2Q covering the photomask pattern 14 to prevent dirt and other impurities from adhering to the photomask pattern 14. Generally speaking, the mask cap 20 includes a transp_t film 22, a frame (f-side) 24 for supporting the translucent adhesive film 22, and an adhesive layer (side adheS1Ve) 26. Is used to adhere the frame 24 to the substrate 12, and the light-transmitting adhesive film is usually attached to the frame 24 via an adhesive layer (not shown). It must be noted that the adhesive layer 26 and the substrate 12 must be completely tightly closed to effectively prevent dust from adhering to the photomask cover 14. The width of the rubber surface 26 is too thin, and the lion layer wire board There are filaments or air bubbles between the 12, and the dust or residual material flows through the body and enters between the photo ^ protective cover 2G and the substrate 12, and is attached to the photomask follower layer 14, thereby affecting the subsequent lithography process. reliability. For example, when the particles are attached to the light-transmitting area b 'within the photomask layer 14, the pattern transfer process of the micro-pure range may transfer the pattern of the particles to the wafer, thereby causing a wafer pattern error. Moreover, as shown in the figure, since the adhesive layer 26 of the conventional photomask protective cover 20 is adhered to the surface of the opaque Lai 16, the technology cannot inspect the surface layer in advance before making the red. Whether there is a gap between the substrate 26 and the substrate 12 or the adhesion is not good, it is often after the product is paid that the photomask iq has only a reduction in product yield and is a waste of cost. SUMMARY OF THE INVENTION The object of the present invention is to provide a light I structure that solves the aforementioned problems. According to the purpose of the present invention, a preferred embodiment of the present invention provides-a kind of light-a Γ substrate, a mask pattern layer provided on the surface of the transparent wire, and 1 transparent on the surface of the transparent substrate and surrounding the mask pattern layer. Electrostatic ring, a mask protective cover covering the ganghai case layer ^, and 1 to bond the photomask protective cover and the silk layer of the second transparent ring 'its towel and the howling ring_ to check the tilt Cover and the base plate: 200535567 The degree of divergence, and the prevention of electrostatic discharge. The invention is based on the hybrid hybrid, which is turned quietly. The electrostatic ring can not only be used to prevent the occurrence of electrostatic discharge, but also to check the toilet. Is there a defect in the joint to ensure that it is accompanied by a mask first: Erxiang " 1 3 ", the protection of the μ lunar substrate ° The mask system will not be affected by unclean objects such as dust, etc., which can improve Reliability of lithography process and increase product yield. 5 、 Implementation 5 [Implementation] FI it is shown in Figures 2 and 4; Figure 3 is a top view of her best supplement on the day of the present day, and Figure 4 is a photomask along the tangent line 4_4 'shown in Figure 3. Schematic cross-section. As shown in Figures 3 and 4 = 'First mask 30 contains-substrate 32' Usually substrate 32 must be made of a material that is highly transparent and highly transparent ', such as quartz, and the surface of substrate 32 contains-photomask Fortunately, the area 32b-surrounds the mask Tulong Gusuzaki area 32b, and-surrounds the outer edge area 32c outside the inner edge area 32b. In addition, the reticle 30 includes a reticle pattern layer 34 provided on the surface of the reticle pattern area 32a, a masking film provided on the surface of the inner edge area, and a chrome film 36b provided on the surface of the coffee cup in the outer edge area. And—located in the transparent annular region 38 where the chrome film is applied. Among them, the photomask_layer 34 is a layout formed by a plurality of transparent areas, $ transparent areas, opaque areas, or her cage, which are used to transfer the pattern, while the chromium film 36a and 36b are It is used to block unnecessary light, and it does not have any chrome metal in the transparent ring region 38. It is used as an insulating electrostatic ring to insulate the chrome films 36a and 36b 'and prevent the occurrence of electrostatic discharge. Generally speaking, the mask pattern layer 34, the chrome films 36a and 36b, and the transparent ring region 38 can be formed simultaneously, and the manufacturing method is firstly deposited-the wire of the chrome metal autumn substrate 32, weaving and then ___ system series The secret metal layer is engraved to form a mask pattern layer 34, a chrome film 36, and a transparent ring region 38. In addition, the reticle 30 also includes a reticle protective cover 40, which covers the top of the reticle pattern 34 to prevent unclean objects such as dust from adhering to the reticle pattern ^. And the photomask 12 200535567 protective cover 40 is mainly composed of a light-transmitting adhesive film 42, a frame 44, and an adhesive layer 46, wherein the light-transmitting adhesive film 42 is a highly light-transmitting adhesive film, such as a confirmation fiber ( nitrocellulose (NC) or fluorinated polymer (fiu〇r〇p〇lyme〇), and the light-transmitting adhesive film 42 is usually bonded to the frame 44 through an adhesive layer (not shown). In addition, the frame, 44 It is used to support the light-transmissive adhesive film 42 and is an aluminum frame, and the aluminum frame is processed through a polar electrode), so it can avoid reflecting light. On the other hand, the adhesive layer is still disposed on the frame private. It is used to adhere the frame 44 to the transparent annular region 38 of the substrate 32, so that the photomask protection cover 40 can cover the entire photomask pattern 34. In addition, the width of the transparent annular area% must be greater than the width d2 of the frame 44. The reduced glue 46 can be on the surface of the transparent annular area 38. In a preferred embodiment of the present invention, The width dl is about 3 mm (_), and the width d2 of the frame 44 is about 2 mm. However, the present invention is not limited to the fact that the widths of the transparent annular region 38 and the frame 44 may be determined according to process requirements. Note that, as shown in FIG. 4, since the adhesive layer 46 is adhered to the surface of the transparent annular region, the present invention can be used by the photomask 30 when the photocathode is completed or periodically inspected, such as an optical microscope. On the back side, that is, the adhesion between the layer 46 and the substrate 32 along the direction of the arrow, if the adhesive layer 46 and the substrate 32 s pass through the mouth, the mask 30 can be used in the lithography process. In the pattern transfer. However, after the inspection of the ancient man ^ machine, it was found that between the adhesive layer 46 and the substrate 32, or the package was not well-closed, the photomask protective cover 40 must be connected to the substrate. Attach the new photomask protective cover 40 to the substrate 32 ±, and finally use two Γ Γ and front M to check the adhesion between the adhesive layer 46 and the substrate 32 in the direction indicated ... The adhesive layer 46 is tightly adhered to the substrate%. Bright ring white technology, the present invention is to adhere the adhesive layer 46 of the photomask protective cover 40 to a static discharge, and the transparent area 38 can not only be used as an electrostatic ring to prevent 46 32 pollution, Furthermore, the reliability of the ancient U-shirt pattern pattern layer 34 that does not suffer from unclean objects such as dust can be improved and the product yield can be improved. 13 200535567 The above is only a preferred embodiment of the present invention. Any equivalent changes and modifications made in accordance with the scope of the patent application for the present invention shall fall within the scope of the patent for the invention. [Brief description of the drawings] Brief description of the drawings FIG. 1 is a top view of a conventional photomask structure. Fig. 2 is a schematic cross-sectional view of the mask structure of Fig. 1 along a tangent line 2-2 '. FIG. 3 is a top view of a photomask according to a preferred embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of the photomask shown in FIG. 3 along a tangent line 4-4 '. Description of Symbols 10 Mask 12 Quartz Substrate 12a Mask Pattern Area 14 Mask Pattern Layer 16 Chrome Film 18 Transparent Loop Zone 20 Mask Protective Cover 22 Transparent Film 24 Frame 26 Adhesive Layer 30 Mask 32 Substrate 32a Mask pattern area 32b Inner edge area 32c Outer edge area 34 Mask pattern layer 36a Chrome film 36b Chrome film 38 Transparent ring area 40 Mask protective cover 42 Light-transmissive film 44 Frame 46 Adhesive layer 14