1283013 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種基板處理裝置，為在搬運半導體 圓、扁平面顯示器（FPD)用玻璃基板、光罩用玻璃基板、 刷基板等之基板時，對基板施加超音波·高壓喷射洗淨 理、水洗處理、氣刀乾燥處理、蝕刻處理、顯像處理、 離處理等之各種處理。 【先前技術】 在對半導體晶圓或 FPD用玻璃基板等之基板施加超 波·高壓噴射洗淨處理、水洗處理、蝕刻處理等之濕式 理之情況時，係使用具備有處理室之基板處理裝置，在 處理室之内部配置有超音波·高壓噴射洗淨裝置、水洗 置、蝕刻裝置等之處理工具。然後，利用滚筒式輸送器 之搬運機構搬運基板之同時，在處理室内對基板供給純 或蝕刻液等之藥液，對基板施加指定之處理。依此，基 在處理室内被搬運的同時，在處理室内接受濕式處理。 此，處理室在以平面角度觀之為等於或大於基板之大小 另外，提案有未具備處理室，而具備在基板搬運方向 尺寸小於基板之處理.工具的基板處理裝置。亦即，所提 之基板處理裝置，在一端形成具有用來導入處理液之導 口的導入道路，和在一端形成具有用來將濕式處理後之 式處理液排出到系外之排出口的排出通路，將導入通路 排出通路各在另一端交叉而形成交叉部，在其交叉部具 由設有朝向基板開口之開口部的f嘴構成體所構成之處 312XP/發明說明書(補件)/94-04/93139789 晶 印 處 剝 音 處 該 裝 等 水 板 因 〇 之 案 入 濕 與 備 理 5 1283013 工具，該處理工具之在基板搬運方向之尺寸為小於基板（例 如，參照曰本平成1 0年專利申請公開第1 6 3 1 5 3號公報）。 【發明内容】 (發明所欲解決之問題） 具備有在内部配置處理工具的處理室之基板處理裝置 中，隨著基板尺寸之大型化，使處理室變大，而裝置全體 大型化。例如，在進行蝕刻處理之裝置中，需要在基板之 搬運方向連續設置餘刻處理室、水洗處理室和乾燥處理 室，則裝置全體大型化，佔用清潔室内之空間變大，裝置 之製造成本亦增加。另外，亦有由於處理室變大而使藥液 或純水之使用量增大的問題。 另一方面，在未具備處理室、而具備有小於基板之處理 工具的基板處理裝置，雖在設置空間或製造成本方面為有 利，藥液或純水之使用量亦減少，但需要有防止藥液與純 水流出或飛散到排出通路外之手段或控制，則使裝置構造 或控制機構複雜化。尚且，亦有處理液之飛沫或蒸發氣體 從喷嘴構成體之開口部朝向周邊環境擴散之虞。 本發明乃為鑑於上述之問題而成者，其目的為提供一種 基板處理裝置，係具有在内部配置有處理工具之處理室構 造，同時可以使裝置小型化，亦可以使處理液之使用量減 少，另外，由於其為具備有處理室之構造，所以可容易地 防止處理液之流出或飛散，不會有處理液之飛沫或蒸發氣 體擴散到周邊環境之虞。 (解決問題之手段） 6 312XP/發明說明書(補件)/94-04/93139789 1283013 申請專利範圍第1項之發明為一種基板處理裝置，具備 有：具有基板入口和基板出口的密閉型之處理室；對配置在 該處理室内部之基板施加指定之處理的處理工具；使基板 對於該處理工具相對地移動的移動手段；其特徵為：使上述 處理室之寬度等於或大於基板之相對移動方向之正交方向 的尺寸，且使處理室之長度小於基板之相對移動方向的尺 寸，並使配置有上述處理工具之處理室和基板相對地移 動；為隔絕上述處理室之内部環境和外部環境，而在基板 之相對移動路徑之上方側空間和下方側空間分別具備了將 沖洗用氣體供給至上述處理室的氣體供給手段（沖洗用氣 體供給手段），及將沖洗用氣體自上述處理室排出的氣體排 出手段（排氣手段）。 申請專利範圍第2項之發明為一種基板處理裝置，具備 有：具有基板入口和基板出口的密閉型之處理室；對配置在 該處理室内部之基板施加指定之處理的處理工具，使基板 對於該處理工具相對地移動的移動手段；其特徵為：使上述 處理室之寬度等於或大於基板之相對移動方向之正交方向 的尺寸，且使處理室之長度小於基板之相對移動方向的尺 寸，並使配置有上述處理工具之處理室和基板相對地移 動；為隔絕上述處理室之内部環境和外部環境，而具備有 氣體供給手段，其構成包含有：上·下一對之入口側氣體吐 出手段，在上述處理室之基板入口 ，分別配置於包夾基板 之相對移動路徑之上方側和下方側，分別具有接近基板之 相對移動路徑之對向的氣體吐出口 ，從該氣體吐出口朝向 7 312XP/發明說明書(補件)/94-04/93139789 1283013 基板之相對移動路徑分別吐出氣幕用氣體；及上·下一對 之出口側氣體吐出手段，在上述處理室之基板出口 ，分別 配置於包夾基板之相對移動路徑之上方側和下方側，分別 具有接近基板之相對移動路徑之對向的氣體吐出口 ，從該 氣體吐出口朝向基板之相對移動路徑分別吐出氣幕用氣 體；並具備有氣體排出手段，其構成包含有：上·下一對之 入口側氣體吸入手段，在上述處理室之基板入口 ，分別配 置於包夾基板之相對移動路徑之上方側和下方側，分別具 有接近基板之相對移動路徑之對向的氣體吸入口 ，通過該 氣體吸入口分別吸入氣幕用氣體；和上·下一對之出口側 氣體吸入手段，在上述處理室之基板出口 ，分別配置於包 夾基板之相對移動路徑之上方側和下方側，分別具有接近 基板之相對移動路徑之對向的氣體吸入口 ，通過該氣體吸 入口分別吸入氣幕用氣體。 申請專利範圍第3項之發明，其特徵為，申請專利範圍 第2項之基板處理裝置中，具備有切換手段，切換成為當 在上述處理室之基板入口存在有基板時，使上述上·下一 對之入口側氣體吐出手段和上述上·下一對之入口側氣體 吸入手段分別進行動作；當在上述處理室之基板出口存在 有基板時，使上述上·下一對之出口側氣體吐出手段和上· 下一對之出口側氣體吸入手段分別進行動作；當在上述處 理室之基板入口未存在有基板時，使上述上方側或下方側 之入口側氣體吐出手段和上述下方側或上方側之入口側氣 體吸入手段分別進行動作；當在上述處理室之基板出口未 8 312XP/發明說明書(補件)/94-04/93139789 1283013 存在有基板時，使上述上方側或下方側之出口側氣體吐出 手段和上述下方側或上方側之出口側氣體吸入手段分別進 行動作。 申請專利範圍第4項之發明的特徵為在申請專利範圍第 1至3項中任一項之基板處理裝置中，使上述處理室在基 板之相對移動方向連續地設置多個。 (發明效果） 在申請專利範圍第1或2項之各個發明之基板處理裝置 中，在密閉型之處理室内部配置對於基板施加指定處理之 處理工具，由於利用氣體供給手段和氣體排出手段隔絕處 理室之内部環境和外部環境，所以可容易地防止處理液的 流出與飛散、並可防止處理液之飛沫或蒸發氣體擴散到周 邊環境。另一方面，處理室之長度設為在基板之相對移動 方向上的尺寸小於基板，因為使處理室和基板進行相對地 移動，所以可以使裝置小型化，可達成節省空間和降低成 本之同時，亦可以減少處理液之使用量。 尚且，在申請專利範圍第 1項之發明的基板處理裝置 中，藉由氣體供給手段（沖洗用氣體供給手段）將沖洗用氣 體供給到密閉型之處理室内，藉此抑制氣體從外部侵入到 處理室内，藉由氣體排出手段（排氣手段）將沖洗用氣體從 處理室内排氣，藉此抑制氣體從處理室内漏出到外部。藉 此可隔絕處理室之内部環境和外部環境。更進一步，在申 請專利範圍第1項之發明的基板處理裝置中，基板在處理 室内相對地移動，即使處理室之内部空間被基板分斷成為 9 312XP/發明說明書(補件)/94-04/93139789 1283013 上·下部份，藉由將氣體供給手段和氣體排出手段分別設 在基板之相對移動路徑的上方側空間和下方側空間，可確 實地隔絕處理室之内部環境和外部環境。 另外，在申請專利範圍第2項之發明的基板處理裝置， 從入口側氣體吐出手段和出口側氣體吐出手段之各氣體吐 出口 ，朝向基板之相對移動路徑分別吐出氣幕用氣體的同 時，通過入口側氣體吸入手段和出口側氣體吸入手段之各 氣體吸入口 ，分別吸入氣幕用氣體，藉此在處理室之基板 入口和基板出口分別形成氣幕。藉此可以隔絕處理室之内 部環境和外部環境。更進一步，在申請專利範圍第2項之 發明的基板處理裝置，基板對於處理室進行相對地移動， 即使處理室之基板入口或基板出口被基板分斷成為上·下 部份，藉由使入口側及出口側之各氣體吐出手段、和入口 側及出口側之各氣體吸入手段包夾著基板之相對移動路徑 並分別被設在上方側和下方側，則可以確實地隔絕處理室 之内部環境和外部環境。 在申請專利範圍第3項之發明的基板處理裝置中，當在 處理室内沒有基板存在時，在處理室之基板入口和基板出 口 ，分別從上方側或下方側之氣體吐出手段之氣體吐出 口，朝向基板之相對移動路徑吐出氣幕用氣體之同時，通 過下方側或上方側之氣體吸入手段之氣體吸入口 ，吸入氣 幕用氣體，藉此形成氣體之氣幕。 在處理室内基板之一部份進行相對地移動，當在處理室 之基板入口存在有基板、在基板出口未存在有基板時，在 10 312XP/發明說明書(補件)/94-04/93139789 1283013 處理室之基板入口 ，從上·下一對之入口側氣體吐出手段 之氣體吐出口 ，朝向基板之相對移動路徑分別吐出氣幕用 氣體，各氣幕用氣體在基板之上面和下面分別彈回，通過 上·下一對之入口側氣體吸入手段之氣體吸入口分別被吸 入，藉此在基板之上·下兩面側分別形成氣體之氣幕。另 一方面，在處理室之基板出口 ，從上方側或下方側之出口 側氣體吐出手段之氣體吐出口 ，朝向基板之相對移動路徑 吐出氣幕用氣體之同時，通過下方側或上方側之出口側氣 體吸入手段之氣體吸入口 ，吸入氣幕用氣體，藉此形成氣 體之氣幕。 在處理室内基板相對地移動，當在處理室之基板入口和 基板出口存在有基板時，在處理室之基板入口和基板出 口 ，分別從上·下一對之氣體吐出手段之氣體吐出口 ，朝 向基板之相對移動路徑分別吐出氣幕用氣體，各氣幕用氣 體在基板之上面和下面分別彈回，通過上·下一對之氣體 吸入手段之氣體吸入口分別被吸入，藉此在基板之上·下 兩面側分別形成氣體之氣幕。 另外，當在處理室之基板入口未存在有基板、而在基板 出口存在有基板時，在處理室之基板入口，從上方側或下 方側之入口側氣體吐出手段之氣體吐出口 ，朝向基板之相 對移動路徑吐出氣幕用氣體之同時，通過下方側或上方側 之入口側氣體吸入手段之氣體吸入口吸入氣幕用氣體，藉 此形成氣體之氣幕。另一方面，在處理室之基板出口 ，從 上·下一對之出口側氣體吐出手段之氣體吐出口，朝向基 11 312XP/發明說明書(補件)/94-04/93139789 1283013 板之相對移動路徑分別吐出氣幕用氣體，各氣幕用氣體在 基板之上面和下面分別彈回，通過上·下一對之出口側氣 體吸入手段之氣體吸入口分別被吸入，藉此在基板之上· 下兩面側分別形成氣體之氣幕。 利用上述之作用，可以使處理室之内部環境和外部環境 時常且確實地隔絕。 在申請專利範圍第4項之發明的基板處理裝置中，藉由 多個連續設置的處理室對於基板連續地施加多種之處理， 例如蝕刻處理、水洗處理和乾燥處理。另外，由於各個處 理室之長度小於基板之相對移動方向的尺寸，所以可以抑 制裝置全體之大型化。 【實施方式】 下面參照圖1至圖1 1，針對本發明之最佳實施形態進行 . 說明。 圖1概略地表示本發明之實施形態之1實例，為模式性 地表示基板處理裝置之概略構造。 該基板處理裝置具備有基板搬入口 1 2和基板搬出口 1 4 的密閉型之處理室1 0。在處理室1 0之内部配置有作為對 基板 W施加指定處理之處理工具的超音波·高壓噴射洗 淨·水洗處理部1 6和氣刀乾燥處理部1 8。超音波·高壓 喷射洗淨·水洗處理部1 6和氣刀乾燥處理部1 8係包夾著 基板W之搬運路徑而分別被設置在其之上方側和下方側。 另外，具備有滾筒輸送器2 0，以進行基板W之搬入到處理 室10内，在處理室10内之搬運和從處理室10内之搬出。 12 312XP/發明說明書(補件)/94-04/93139789 1283013 處理室10如圖2之概略平面圖所示，其寬度設為大於 或等於基板W在搬運方向之正交方向的尺寸’其長度設為 小於基板W在搬運方向的尺寸。因此，基板W在其一部份 被收容於處理室1 0内之狀態，對其收容部份實施超音波· 高壓噴射洗淨·水洗處理或氣刀乾燥處理。然後，基板 w 藉由滾筒輸送器 2 0搬運而各部份順序地通過處理室 1 0 内，在基板W之全體完全通過處理室1 0内時，則結束對基 板W之全面的處理。依此，藉由使處理室1 0之平面形狀小 於基板W，可使裝置全體小型化。 另外，在處理室1 0分別設有氣體供給口 2 4和排氣口 2 6，在氣體供給口 2 4，連通地接續有空氣、氮氣等之沖洗 用氣體之供給管，例如空氣供給管2 8，成為從圖中未顯示 之空氣供給源通過空氣供給管2 8將空氣供給到處理室1 0 内。另外，在排氣口 2 6連通地接續有排氣管3 0，通過空 氣供給管2 8而供給到處理室1 0内之沖洗用空氣，則通過 排氣管3 0藉由圖中未顯示之真空排氣泵排氣。藉由適當地 調節·控制對處理室1 0内之空氣供給流量和自處理室1 0 内之排氣流量，可抑制外來氣體通過基板搬入口 1 2或基板 搬出口 1 4從外部侵入到處理室1 0内，並可抑制氣體通過 基板搬入口 1 2或基板搬出口 1 4從處理室1 0内向外部漏 出。依此，使處理室1 0之内部環境和外部環境被隔絕，可 防止洗淨所使用之純水的飛洙或以氣刀1 8從基板W上除去 而蒸發之氣體向處理室1 0外擴散。尚且，在處理室1 0亦 設有排水口’但省略其圖示。 13 312XP/發明說明書(補件)/94-04/93139789 1283013 圖3模式性地表示，本發明之另一實施形態之基板 裝置的概略構造。該基板處理裝置具備有與圖1所示 板處理裝置之處理室1 0為同樣的處理室1 0 (在圖3中 與圖1所不之基板處理裝置為共通之構成構件’亦標 圖1所使用之符號為相同之符號，而其等之說明則加 略），同時，在處理室1 0之上游側設置有另一個之處 3 2。處理室 3 2亦為具有基板搬入口 3 4和基板搬出〗 之密閉型，在處理室3 2之内部配置有對基板W上面施 刻處理的蝕刻處理部38。另外，在處理室32之内部 有搬運基板W用之滾筒輸送器2 2。 與處理室1 0同樣地，處理室3 2亦使其寬度等於或 在基板W搬運方向之正交方向的尺寸，使其長度小於 板W之搬運方向的尺寸。因此，基板W在其一部份被 於處理室3 2内之狀態，於其收容部份實施蝕刻處理， 基板W以滾筒輸送器2 2搬運則各個部份順序地通過處 3 2内，而對基板W之全面進行蝕刻處理。在該基板處 置係利用2個連設之處理室3 2、1 0對於基板W連續施 刻處理與超音波·高壓喷射洗淨·水洗處理及氣刀乾 理，但因為各個處理室3 2、1 0之長度分別小於基板W 運方向的尺寸，故可使裝置全體小型化。 另外，在處理室3 2亦分別設有氣體供給口 4 0和排 4 2，於氣體供給口 4 0連通接續著空氣供給管 4 4，於 口 4 2連通接續著排氣管4 6。其次，與處理室1 0同稽 藉由適當地調節·控制對處理室3 2内之空氣的供給流 312ΧΡ/發明說明書(補件)/94-04/93139789 處理 之基 ，於 示與 以省 理室 ]36 力口蚀 配置 大於 在基 收容 藉由 理室 理裝 力口雀虫 無處 之搬 氣口 排氣 [地， 量與 14 1283013 從處理室3 2内之排氣流量，可隔絕處理室3 2之内部環境 和外部環境。 圖4和圖5為表示處理室之構造例，圖4為處理室之沿 基板搬運方向之剖面圖，表示圖5之I V - I V箭頭視線剖面 圖；圖5為處理室在基板搬運方向之正交方向之剖面圖， 表示圖4之V - V箭頭視線剖面圖。 該處理室48為具有基板搬入口 50和基板搬出口 52之 密閉型，在處理室48之内部配置有處理工具54，但處理 室4 8在基板.W之搬運方向之正交方向，使其底面和頂面傾 斜，基板W亦以在其搬運方向之正交方向為傾斜之姿勢藉 由滾筒搬送器（圖中未顯示。在圖6至圖1 0亦同）搬運。另 外，該處理室48亦為使其寬度等於或大於基板W之搬運方 向之正交方向的尺寸，使其長度小於基板W之搬運方向的 尺寸。尚且，在處理室48於其頂面之高側端附近設有氣體 供給口 5 6，於該氣體供給口 5 6連通接續有空氣供給管5 8， 又，在處理室 48之底面的低側端附近設有排氣·排液口 6 0，在該排氣·排液口 6 0連通接續著排氣·排液管6 2。 在此種構造之處理室4 8，流下到底面之排液沿著傾斜面自 然地流向一側端側，通過排氣·排液管6 2從排氣·排液口 6 0排出。 其次，於圖6所示之沿基板搬運方向之剖面圖的處理室 64，為具有基板搬入口 66和基板搬出口 68之密閉型，在 該處理室64之内部，處理工具70a、7 0 b包夾著基板搬運 路徑而分別設置於其之上方和下方。另外，在處理室 64 15 312XP/發明說明書(補件)/94-04/93139789 1283013 之頂面與處理工具70a之間，及處理室64之底面與處理工 具7 0 b之間，分別設有隔壁7 1 a、7 1 b，藉由該隔壁7 1 a、 7 1 b在基板搬運方向將處理室6 4之内部空間前後地分隔， 該前·後之内部空間經由形成於基板W與處理工具7 1 a、 71 b之對向面之間的通路，連接成流通路徑。接著，在處 理室6 4之頂面和底面，於較隔壁7 1 a、7 1 b之形成位置的 基板搬運方向之前方側，分別設置氣體供給口 7 2 a、7 2 b， 在該各氣體供給口 7 2 a、7 2 b分別連通接續著空氣供給管 74a、74b。又，在處理室64之頂面和底面，於較隔壁71a、 7 1 b之形成位置的基板搬運方向之前方側，分別設置排氣 口 7 6 a、7 6 b，在該各排氣口 7 6 a、7 6 b分別連通接續著排 氣管 78a 、 78b 。 在具有此種構造之處理室64中，基板W被搬入到處理 室64内，即使處理室64之内部空間如圖6所示般地以基 板W分斷成為上·下部份，通過空氣供給管7 4 a、7 4 b將沖 洗用之空氣分別供給到基板搬運路徑之上方側空間和下方 側空間，又，通過排氣管7 8 a、7 8 b從基板搬運路徑之上方 側空間和下方側空間分別將空氣排氣。因此，藉由適當地 調節·控制對處理室 64内之空氣的供給流量和從處理室 6 4内的排氣流量，可確實地隔絕處理室6 4之内部環境和 外部環境。另外，由於處理室64内之空氣如圖6中以虛線 所示般地流動，故藉由形成該種氣流，可防止霧（粒子）再 附著於處理完成之基板W表面。 圖7至圖1 0為表示處理室的另一構造例之沿基板搬運 16 312XP/發明說明書(補件)/94-04/93139789 1283013 方向之剖面圖。該處理室8 0亦為具有基板搬入口 8 2和基 板搬出口 8 4之密閉型，在處理室8 0之内部設有處理工具 86，而在該處理室80於基板搬入口 82和基板搬出口 84 分別配置有氣體供給手段和氣體排出手段。 亦即，在處理室80之基板搬入口 82於包夾著基板搬運 路徑之上方側和下方側，設置有接近基板搬運路徑並對向 地開口之上·下一對的空氣吐出通路88a、88b，在各空氣 吐出通路8 8 a、8 8 b分別連通接續著流通接續到空氣供給源 (圖中未顯示）之空氣供給管90a、90b。又，在包夾著基板 搬運路徑之上方側和下方側，設置有鄰接空氣吐出通路 8 8 a、8 8 b、且接近基板搬運路徑並對向地開口之上·下一 對的空氣吸入通路92a、92b，在各空氣吸入通路92a、92b， 分別連通接續著流通接續到真空排氣泵（圖中未顯示）之排 氣管94a、94b。空氣吐出通路88a、88b和空氣吸入通路 9 2 a、9 2 b分別被設置成涵蓋基板搬入口 8 2之開口寬度（基 板搬運方向之正交方向的開口寬度）的全體。接著，從空氣 吐出通路88a、88b自該空氣吐出口朝向基板搬運路徑吐出 氣幕用空氣，該吐出之空氣通過空氣吸入口被吸入到空氣 吸入通路92a、92b内，如後述般地在基板搬入口 82形成 空氣氣幕。 另外，在處理室8 0之基板搬出口 8 4亦同樣地，在包夾 著基板搬運路徑之上方側和下方側，設置有接近基板搬運 路徑並對向地開口之上·下一對的空氣吐出通路 96a、 9 6 b，在各空氣吐出通路9 6 a、9 6 b分別連通接續著流通接 17 312XP/發明說明書(補件)/94-(M/93139789 1283013 續到空氣供給源（圖中未顯示）之空氣供給管 9 8 a、9 8 b。 又，在包夾著基板搬運路徑之上方側和下方側，設置有鄰 接空氣吐出通路9 6 a、9 6 b、且接近基板搬運路徑並對向地 開口之上·下一對的空氣吸入通路100a、100b，在各空氣 吸入通路1 0 0 a、1 0 0 b分別連通接續著流通接續到真空排氣 泵（圖中未顯示）之排氣管1 0 2 a、1 0 2 b。 雖圖中未顯示，但在各空氣供給管90a、90b、98a、98b 和各排氣管9 4 a、9 4 b、1 0 2 a、1 0 2 b分別插入設有開閉控制 閥。接著，利用控制裝置分別切換控制各開閉控制閥，藉 此在基板搬入口 8 2和基板搬出口 8 4經常地形成空氣氣 幕，構建成為使處理室8 0之内部環境和外部環境經常且確 實地被隔絕。該切換動作係以下面所述般進行。 首先，如圖7所示，當在處理室80内存在有基板W時， 分別在處理室 8 0之基板搬入口 8 2和基板搬出口 8 4，從 上·下一對之空氣吐出通路88a、88b; 96a、96b之空氣吐 出口 ，朝向基板搬運路徑分別吐出空氣，該被吐出之空氣 在基板W之上面和下面分別彈回，通過空氣吸入口分別被 吸入到上·下一對之空氣吸入通路92a、92b; 100a、100b 内並被排氣。依此，在處理室8 0之基板搬入口 8 2和基板 搬出口 84的基板W之上·下兩面側分別形成空氣氣幕。 其次，如圖8所示，當在處理室80内未存在有基板W 時，分別在處理室8 0之基板搬入口 8 2和基板搬出口 8 4， 從上方側或下方側（於圖示例中為上方側）之空氣吐出通路 8 8 a、9 6 a之空氣吐出口 ，朝向基板搬運路徑吐出.空氣，該 18 312XP/發明說明書(補件)/94-04/93139789 1283013 被吐出之空氣通過空氣吸入口被吸入到下方側或上方側 (於圖示例中為下方側）之空氣吸入通路9 2 b、1 0 0 b内並被 排氣。依此，僅從上·下一對之空氣吐出通路8 8 a、8 8 b ; 96a、96b之其中一側的空氣吐出口吐出空氣，在上*下一 對之空氣吸入通路92a、92b; 100a、100b中，僅於與吐出 空氣之空氣吐出通路為對向側的空氣吸入口吸入空氣，藉 此在處理室8 0之基板搬入口 8 2和基板搬出口 8 4分別形成 空氣氣幕。 又，如圖9所示，當基板W之前端位於處理室80内時， 在處理室80之基板搬入口 82，從上·下一對之空氣吐出 通路8 8 a、8 8 b之空氣吐出口，分別朝向基板搬運路徑吐出 空氣，該被吐出之各空氣在基板 W之上面和下面分別彈 回，通過空氣吸入口分別被吸入到上·下一對之空氣吸入 通路92a、92b内並被排氣。依此，在處理室80之基板搬 入口 8 2的基板W之上·下兩側分別形成空氣氣幕。另一方 面，在處理室8 0之基板搬出口 8 4，從上方側或下方側（於 圖示例中為上方側）之空氣吐出通路9 6 a的空氣吐出口，朝 向基板搬運路徑吐出空氣，該被吐出之空氣通過空氣吸入 口被吸入到下方側或上方側（於圖示例中為下方側）之空氣 吸入通路100b内並被排氣。依此，在處理室80之基板搬 出口 84形成空氣氣幕。 另外，如圖1 0所示，當基板W之後端位於處理室8 0内 時，在處理室8 0之基板搬入口 8 2，從上方側或下方側（於 圖示例中為上方側）之空氣吐出通路8 8 a的空氣吐出口，朝 19 312XP/發明說明書(補件)/94-04/93139789 1283013 向基板搬運路徑吐出空氣，該被吐出之空氣通過空氣吸入 口被吸入到下方側或上方側（於圖示例中為下方側）之空氣 吸入通路92b内並被排氣。依此，在處理室80之基板搬入 口 82形成空氣氣幕。另一方面，在處理室80之基板搬出 口 84，從上·下一對之空氣吐出通路96a、96b之空氣吐 出口朝向基板搬運路徑分別吐出空氣，該被吐出之各空氣 在基板W之上面和下面分別彈回，通過空氣吸收口分別被 吸入到上·下一對之空氣吸入通路 100a、1 0 0 b 内並被排 氣。依此，在處理室80之基板搬出口 84的基板W之上· 下兩面側分別形成空氣氣幕。 在上述之各實施形態之說明中，為處理室1 0、3 2、4 8、 6 4、8 0被固定而搬運基板W之方式，但亦可使處理室和基 板相對地移動以進行基板之處理。圖 1 1 ( a )所示之概略圖 的裝置，為如上述各實施形態之基板處理裝置般，將在内 部配置有處理工具104之處理室106固定而搬運基板W之 方式。圖11(b)所示之裝置為將基板W固定，而使處理室 1 0 6相對於基板W相對地移動。圖1 1 ( c )所示之裝置為使基 板W和處理室1 0 6分別朝向同一方向移動，而使處理室1 0 6 之移動速度較基板W之搬運速度慢。尚，亦可使基板W和 處理室1 0 6分別朝向互相相反之方向移動。圖1 1 ( d )所示 之裝置為將設有處理工具104a之處理室106a和設有處理 工具 104b之處理室 106b連續設置·於基板搬運方向並固 定，相對於該等之處理室1 0 6 a、1 0 6 b搬運基板W的構造例。 當然，與圖1 1 ( b)或（c)同樣地，亦可將基板W固定，使處 20 312XP/發明說明書(補件)/94-04/93139789 1283013 理室1 0 6 a、1 0 6 b相對於基板W移動，或使處理室1 0 6 a、 1 Ο 6 b以較基板搬運速度為慢之速度，與基板W朝向同一方 向移動。又，圖11(e)所示之裝置為將在包夾著基板搬運 路徑之上方和下方分別配置有處理工具1 0 8 a、1 0 8 b之處理 室1 1 0固定，相對於該處理室1 1 0搬運基板W的構造例。 當然，與圖1 1 ( b)或（c)同樣地，亦可將基板W固定，使處 理室1 1 0相對於基板W移動，或使處理室1 1 0以較基板搬 運速度為慢之速度，與基板W朝向同一方向移動。 【圖式簡單說明】 圖1表示本發明之實施形態之1例，為模式性地表示基 板處理裝置的概略構造之圖。 圖2為圖1所示之基板處理裝置之處理室的概略平面圖。 圖3為模式性地表示本發明之其他實施形態之基板處理 裝置的概略構造之圖。 圖4表示本發明之基板處理裝置之處理室的構造例，為 處理室之沿基板搬運方向之剖面圖，且為圖5之I V - I V箭 頭視線剖面圖。 圖5為圖4所示之處理室的基板搬運方向之正交方向之 剖面圖，且為圖4之V-V箭頭視線剖面圖。 圖6為表示本發明之基板處理裝置的處理室之其他構造 例之沿基板搬運方向的剖面圖。 圖7為表示本發明之基板處理裝置的處理室之其他構造 例之沿基板搬運方向的剖面圖。 圖8同樣為處理室之剖面圖，表示與圖7所示之狀態為 21 312XP/發明說明書(補件)/94-04/93139789 1283013 0 狀 之 異 相 狀 示 所 8 圖 和 7 圖 與 示 表 圖 面 剖 之 室 S 處 為 樣 同 9 圖 態 狀 之 異 相 為 態 大 M3 之 示 所 9 圖 至 7 圖 示 表 圖 面 剖 之 室 S 處 為 榡 同 ο 11 圖 態 大 之 異 相 為 態 圖 至 a 之 移 對 相 之 室 ^*•1 S 處 和 板 基 示 表 別 分 為 圖 式 模 的 樣 態[Technical Field] The present invention relates to a substrate processing apparatus which is a substrate for transporting a semiconductor wafer, a flat surface display (FPD) glass substrate, a photomask glass substrate, a brush substrate, or the like. At the time, various processes such as ultrasonic, high-pressure jet cleaning, water washing, air knife drying, etching, development, and separation are applied to the substrate. [Prior Art] When a wet process such as a superwave/high-pressure jet cleaning process, a water washing process, or an etching process is applied to a substrate such as a semiconductor wafer or a FPD glass substrate, substrate processing using a processing chamber is used. In the apparatus, processing tools such as an ultrasonic wave/high-pressure jet cleaning device, a water washing device, and an etching device are disposed inside the processing chamber. Then, the substrate is transported by the transport mechanism of the drum conveyor, and a chemical liquid such as pure or etching liquid is supplied to the substrate in the processing chamber, and a predetermined process is applied to the substrate. Accordingly, the substrate is subjected to wet processing in the processing chamber while being transported in the processing chamber. Therefore, the processing chamber is equal to or larger than the size of the substrate in a plan view. Further, there is proposed a substrate processing apparatus which does not have a processing chamber and which has a size smaller than that of the substrate in the substrate transport direction. That is, the substrate processing apparatus is provided with an introduction path having a guide port for introducing the treatment liquid at one end, and a discharge port having a discharge liquid for discharging the wet treatment type to the outside of the system at one end. In the discharge passage, each of the introduction passage discharge passages intersects at the other end to form an intersection portion, and the intersection portion is formed by a f-mouth structure having an opening portion facing the substrate opening. 312XP/Invention Manual (Supplement)/ 94-04/93139789 The squeegee is stripped at the stencil. The slab is filled with wet and prepared 5 1283013 tools. The size of the processing tool in the substrate transport direction is smaller than the substrate (for example, refer to 曰本平成1) 0-year patent application publication No. 1 6 3 1 5 3). [Problems to be Solved by the Invention] In the substrate processing apparatus including the processing chamber in which the processing tool is disposed, the processing chamber is enlarged as the size of the substrate is increased, and the entire apparatus is increased in size. For example, in the apparatus for performing the etching treatment, it is necessary to continuously provide the residual processing chamber, the water washing processing chamber, and the drying processing chamber in the transport direction of the substrate, and the entire apparatus is enlarged, the space occupying the clean room is increased, and the manufacturing cost of the device is also increased. increase. Further, there is a problem that the amount of the chemical liquid or the pure water is increased due to the increase in the processing chamber. On the other hand, in the substrate processing apparatus which does not have a processing chamber and has a processing tool smaller than the substrate, it is advantageous in terms of installation space and manufacturing cost, and the amount of chemical liquid or pure water is also reduced, but it is necessary to prevent the medicine. The means or control by which the liquid and pure water flow out or scatter outside the discharge passage complicates the device construction or control mechanism. Further, there are also droplets of the treatment liquid or evaporation gas which diffuse from the opening of the nozzle structure toward the surrounding environment. The present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing apparatus having a processing chamber structure in which a processing tool is disposed therein, and at the same time, the apparatus can be miniaturized, and the amount of the processing liquid can be reduced. Further, since it has a structure having a processing chamber, it is possible to easily prevent the outflow or scattering of the treatment liquid, and there is no possibility that the droplets of the treatment liquid or the evaporation gas diffuse into the surrounding environment. (Means for Solving the Problem) 6 312XP/Invention Manual (Supplement)/94-04/93139789 1283013 The invention of claim 1 is a substrate processing apparatus comprising: a closed type processing having a substrate inlet and a substrate outlet a processing tool for applying a specified process to a substrate disposed inside the processing chamber; a moving means for relatively moving the substrate to the processing tool; wherein the width of the processing chamber is equal to or greater than a relative moving direction of the substrate The dimension in the orthogonal direction, and the length of the processing chamber is smaller than the dimension of the relative movement direction of the substrate, and the processing chamber and the substrate on which the processing tool is disposed are relatively moved; to isolate the internal environment and the external environment of the processing chamber, Further, the upper side space and the lower side space of the relative movement path of the substrate are respectively provided with a gas supply means (a flushing gas supply means) for supplying a flushing gas to the processing chamber, and a flushing gas is discharged from the processing chamber. Gas discharge means (exhaust means). The invention of claim 2 is a substrate processing apparatus comprising: a sealed processing chamber having a substrate inlet and a substrate outlet; and a processing tool for applying a predetermined process to the substrate disposed inside the processing chamber, a moving means for relatively moving the processing tool; characterized in that: the width of the processing chamber is equal to or larger than a dimension of an orthogonal direction of a relative moving direction of the substrate, and the length of the processing chamber is smaller than a dimension of a relative moving direction of the substrate, The processing chamber and the substrate on which the processing tool is disposed are relatively moved; and the gas supply means is provided to isolate the internal environment and the external environment of the processing chamber, and includes a pair of upper and lower inlet gas discharges The substrate inlets of the processing chambers are respectively disposed on the upper side and the lower side of the relative movement path of the sandwich substrate, and each has a gas discharge port facing the opposite movement path of the substrate, and the gas discharge port is oriented from the gas discharge port. 312XP / invention manual (supplement) /94-04/93139789 1283013 relative movement path of the substrate The gas for discharging the gas curtain; and the upper and lower pair of outlet side gas discharge means are disposed on the upper and lower sides of the relative movement path of the sandwich substrate at the substrate outlets of the processing chamber, respectively, and have a relative proximity to the substrate The gas discharge port facing the moving path, the gas for the gas curtain is discharged from the gas discharge port toward the substrate, and the gas discharge means is provided, and the gas inlet means includes: the upper and lower pair of inlet side gas suction The substrate inlets of the processing chambers are respectively disposed on the upper side and the lower side of the relative movement path of the sandwich substrate, and each has a gas suction port facing the opposite movement path of the substrate, and is respectively sucked through the gas suction port. The air curtain gas; and the upper and lower pair of outlet side gas suction means are disposed on the upper and lower sides of the relative movement path of the sandwich substrate at the substrate outlets of the processing chamber, respectively, and have relative movements close to the substrate The gas suction port opposite to the path sucks the gas for the curtain curtain through the gas suction port. According to a third aspect of the invention, in the substrate processing apparatus of the second aspect of the invention, the switching device is provided to switch the upper and lower sides when a substrate is present at a substrate inlet of the processing chamber. The pair of inlet side gas discharge means and the upper and lower pair of inlet side gas suction means operate, and when the substrate is present at the substrate outlet of the processing chamber, the upper and lower pair of outlet side gases are discharged. The means and the upper and lower pair of outlet side gas suction means operate separately; when the substrate is not present at the substrate inlet of the processing chamber, the upper side or the lower side inlet side gas discharge means and the lower side or upper side are provided The side inlet side gas suction means is operated separately; when the substrate exit is not included in the substrate outlet of the processing chamber, the upper or lower side outlet is provided when there is a substrate in the substrate outlet No. 8 312XP/invention specification (supplement)/94-04/93139789 1283013 The side gas discharge means and the outlet side gas suction means on the lower side or the upper side are operated separately. In the substrate processing apparatus according to any one of claims 1 to 3, the processing chamber is provided in plurality in the relative movement direction of the substrate. (Effect of the Invention) In the substrate processing apparatus according to each of the first or second aspects of the invention, the processing tool for applying a predetermined process to the substrate is disposed inside the sealed processing chamber, and is insulated by the gas supply means and the gas discharge means. Since the internal environment and the external environment of the chamber can easily prevent the outflow and scattering of the treatment liquid, and prevent the droplets of the treatment liquid or the evaporation gas from diffusing into the surrounding environment. On the other hand, the length of the processing chamber is set to be smaller than the substrate in the relative moving direction of the substrate, because the processing chamber and the substrate are relatively moved, so that the device can be miniaturized, and space saving and cost reduction can be achieved. It is also possible to reduce the amount of the treatment liquid used. Further, in the substrate processing apparatus of the invention of the first aspect of the invention, the gas supply means (the gas supply means for rinsing) supplies the rinsing gas to the sealed processing chamber, thereby suppressing the gas from entering the processing from the outside. In the room, the flushing gas is exhausted from the processing chamber by a gas discharge means (exhaust means), thereby suppressing leakage of gas from the processing chamber to the outside. This isolates the internal and external environment of the process room. Further, in the substrate processing apparatus according to the first aspect of the invention, the substrate is relatively moved in the processing chamber, even if the internal space of the processing chamber is divided by the substrate into 9 312XP/invention specification (supplement)/94-04 /93139789 1283013 The upper and lower portions are provided with the gas supply means and the gas discharge means, respectively, in the upper side space and the lower side space of the relative movement path of the substrate, thereby reliably insulating the internal environment and the external environment of the processing chamber. Further, in the substrate processing apparatus of the invention of the second aspect of the invention, the gas discharge ports of the inlet-side gas discharge means and the outlet-side gas discharge means are discharged, and the gas for the curtain curtain is ejected toward the relative movement path of the substrate. The gas suction ports of the inlet side gas suction means and the outlet side gas suction means respectively suck the gas for the air curtain, thereby forming a gas curtain at the substrate inlet and the substrate outlet of the processing chamber, respectively. This isolates the internal and external environment of the chamber. Further, in the substrate processing apparatus of the invention of claim 2, the substrate relatively moves the processing chamber, and even if the substrate inlet or the substrate outlet of the processing chamber is divided by the substrate into upper and lower portions, the inlet is made Each of the gas discharge means on the side and the outlet side and the respective gas suction means on the inlet side and the outlet side sandwich the relative movement path of the substrate and are provided on the upper side and the lower side, respectively, thereby reliably insulating the internal environment of the processing chamber. And the external environment. In the substrate processing apparatus according to the third aspect of the invention, when there is no substrate in the processing chamber, the gas discharge port of the gas discharge means from the upper side or the lower side of the substrate inlet and the substrate outlet of the processing chamber are respectively While the gas for the gas curtain is discharged toward the relative movement path of the substrate, the gas for the gas curtain is sucked through the gas suction port of the gas suction means on the lower side or the upper side, thereby forming a gas curtain of the gas. Relatively moving a portion of the substrate in the processing chamber, when there is a substrate at the substrate entrance of the processing chamber, and there is no substrate at the substrate exit, at 10 312 XP / invention specification (supplement) /94-04/93139789 1283013 The substrate inlet of the processing chamber is ejected from the gas discharge ports of the upper and lower pair of inlet side gas discharge means, and the gas for the curtain curtain is ejected toward the relative movement path of the substrate, and the gas for each gas curtain bounces back on the upper and lower sides of the substrate, respectively. The gas suction ports of the upper and lower pair of inlet side gas suction means are respectively sucked, thereby forming gas curtains on the upper and lower sides of the substrate. On the other hand, at the substrate outlet of the processing chamber, the gas discharge port of the gas-discharging means of the outlet side from the upper side or the lower side is discharged toward the relative movement path of the substrate, and the gas exits through the lower side or the upper side. The gas suction port of the side gas suction means sucks the gas for the air curtain, thereby forming a gas curtain of the gas. When the substrate is relatively moved in the processing chamber, when the substrate is present at the substrate inlet and the substrate outlet of the processing chamber, the substrate inlet and the substrate outlet of the processing chamber are respectively directed from the gas discharge ports of the upper and lower gas discharge means. The gas for the gas curtain is respectively ejected from the relative movement path of the substrate, and the gas for each gas curtain is rebounded on the upper surface and the lower surface of the substrate, respectively, and the gas suction ports of the upper and lower pair of gas suction means are respectively sucked, thereby being in the substrate A gas curtain of gas is formed on each of the upper and lower sides. Further, when the substrate is not present at the substrate inlet of the processing chamber and the substrate is present at the substrate outlet, the gas discharge port of the gas discharge means of the inlet side from the upper side or the lower side of the substrate inlet of the processing chamber faces the substrate. At the same time as the gas for the gas curtain is discharged from the moving path, the gas for the gas curtain is sucked through the gas suction port of the inlet side gas suction means on the lower side or the upper side, thereby forming a gas curtain of the gas. On the other hand, in the substrate outlet of the processing chamber, the gas discharge port of the gas discharge means from the upper and lower side of the outlet side faces the relative movement of the substrate 11 312XP / invention manual (supplement) / 94-04 / 93139789 1283013 The gas is discharged from the gas curtains, and the gas for each gas curtain is rebounded on the upper surface and the lower surface of the substrate, respectively, and is sucked through the gas suction ports of the upper and lower pair of outlet side gas suction means, thereby being on the substrate. The gas curtains of the gas are formed on the lower two sides. By utilizing the above effects, the internal environment of the processing chamber and the external environment can be constantly and surely isolated. In the substrate processing apparatus of the invention of claim 4, a plurality of processes such as an etching process, a water washing process, and a drying process are continuously applied to the substrate by a plurality of processing chambers which are continuously disposed. Further, since the length of each processing chamber is smaller than the dimension of the relative movement direction of the substrate, it is possible to suppress an increase in size of the entire apparatus. [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described with reference to Figs. 1 to 1 . Fig. 1 schematically shows an example of an embodiment of the present invention, and schematically shows a schematic configuration of a substrate processing apparatus. This substrate processing apparatus includes a sealed processing chamber 10 having a substrate carrying inlet 1 2 and a substrate carrying port 1 4 . In the processing chamber 10, an ultrasonic/high-pressure jet cleaning/washing treatment unit 16 and an air knife drying processing unit 18 as processing tools for applying a predetermined process to the substrate W are disposed. The ultrasonic wave/high-pressure jet washing/washing treatment unit 16 and the air knife drying processing unit 18 are provided on the upper side and the lower side of the substrate W so as to sandwich the conveyance path of the substrate W. Further, the roller conveyor 20 is provided to carry the substrate W into the processing chamber 10, transport it in the processing chamber 10, and carry it out from the processing chamber 10. 12 312XP/Invention Manual (Supplement)/94-04/93139789 1283013 The processing chamber 10 is as shown in the schematic plan view of FIG. 2, and its width is set to be larger than or equal to the dimension of the substrate W in the orthogonal direction of the conveying direction. It is smaller than the size of the substrate W in the conveyance direction. Therefore, the substrate W is placed in the processing chamber 10 in a part thereof, and the housing portion is subjected to ultrasonic, high-pressure jet washing, water washing treatment or air knife drying. Then, the substrate w is conveyed by the roller conveyor 20 and the portions are sequentially passed through the processing chamber 10, and when the entire substrate W is completely passed through the processing chamber 10, the overall processing of the substrate W is terminated. Accordingly, by making the planar shape of the processing chamber 10 smaller than the substrate W, the entire apparatus can be miniaturized. Further, in the processing chamber 10, a gas supply port 24 and an exhaust port 2, respectively, are provided, and a supply pipe for rinsing gas such as air or nitrogen is continuously connected to the gas supply port 24, for example, the air supply pipe 2 8. Air is supplied into the processing chamber 10 through the air supply pipe 28 from an air supply source not shown. Further, the exhaust pipe 30 is connected to the exhaust port 26, and the flushing air supplied into the processing chamber 10 through the air supply pipe 28 is not shown by the exhaust pipe 30. The vacuum exhaust pump is exhausted. By appropriately adjusting and controlling the air supply flow rate in the processing chamber 10 and the exhaust gas flow rate from the processing chamber 10, it is possible to suppress entry of foreign matter into the processing from the outside through the substrate carrying inlet 12 or the substrate carrying port 14 In the chamber 10, the gas can be prevented from leaking from the inside of the processing chamber 10 to the outside through the substrate carrying inlet 12 or the substrate carrying port 14. Accordingly, the internal environment of the processing chamber 10 and the external environment are isolated, and it is possible to prevent the flying water of the pure water used for washing or the gas evaporated from the substrate W by the air knife 18 and to evaporate the gas to the processing chamber 10 diffusion. Further, the treatment chamber 10 is also provided with a drain port', but the illustration thereof is omitted. 13 312XP/Invention Manual (Supplement)/94-04/93139789 1283013 Fig. 3 schematically shows a schematic configuration of a substrate device according to another embodiment of the present invention. The substrate processing apparatus includes a processing chamber 10 that is the same as the processing chamber 10 of the sheet processing apparatus shown in FIG. 1 (a constituent member common to the substrate processing apparatus shown in FIG. 3 and FIG. 1). The symbols used are the same symbols, and the description thereof is omitted, and another point 3 2 is provided on the upstream side of the processing chamber 10. The processing chamber 32 is also a sealed type having a substrate carrying inlet 34 and a substrate carrying out, and an etching treatment portion 38 for processing the upper surface of the substrate W is disposed inside the processing chamber 32. Further, inside the processing chamber 32, there is a roller conveyor 22 for transporting the substrate W. Similarly to the processing chamber 10, the processing chamber 32 has a width equal to or smaller than the dimension of the substrate W in the direction in which the substrate W is conveyed, and the length thereof is smaller than the dimension of the sheet W in the conveyance direction. Therefore, in a state where a portion of the substrate W is placed in the processing chamber 32, an etching process is performed on the housing portion thereof, and the substrate W is conveyed by the roller conveyor 22, and the respective portions sequentially pass through the portion 3 2 The entire surface of the substrate W is etched. In the substrate processing system, the substrate W is continuously etched by the two processing chambers 3 2, 10, and the ultrasonic, high-pressure jet cleaning, water washing treatment, and air knife processing are performed, but each processing chamber 32 is used. Since the length of 10 is smaller than the dimension of the substrate W, the entire device can be miniaturized. Further, the processing chamber 32 is also provided with a gas supply port 40 and a row 4 2, and the gas supply port 40 is connected to the air supply pipe 4 4, and the port 4 2 is connected to the exhaust pipe 46. Next, in the same manner as the processing chamber 10, by appropriately adjusting and controlling the supply flow 312 of the air in the processing chamber 32/the invention specification (supplement)/94-04/93139789, Room]36 The force clot configuration is larger than the exhaust port in the base containment by the room. The amount of the exhaust flow from the processing chamber 3 2 is detachable. 3 2 internal environment and external environment. 4 and 5 are views showing a configuration of a processing chamber, and Fig. 4 is a cross-sectional view of the processing chamber in the direction in which the substrate is conveyed, showing a cross-sectional view taken along line IV-IV of Fig. 5; and Fig. 5 is a view of the processing chamber in the direction of substrate transportation. A cross-sectional view of the intersection direction, showing a cross-sectional view of the V-V arrow of Fig. 4. The processing chamber 48 is a sealed type having a substrate carrying inlet 50 and a substrate carrying port 52. The processing tool 54 is disposed inside the processing chamber 48. However, the processing chamber 48 is oriented in the direction orthogonal to the conveying direction of the substrate W. The bottom surface and the top surface are inclined, and the substrate W is also conveyed by a drum conveyor (not shown in the drawings, as shown in Fig. 6 to Fig. 10) in an inclined posture in the direction in which the conveyance direction is orthogonal. Further, the processing chamber 48 is also sized such that its width is equal to or larger than the orthogonal direction of the transport direction of the substrate W, and the length thereof is smaller than the transport direction of the substrate W. Further, in the processing chamber 48, a gas supply port 5 6 is provided in the vicinity of the high side end of the top surface thereof, and the gas supply port 56 is connected to the air supply pipe 5, and on the lower side of the bottom surface of the processing chamber 48. An exhaust/drain port 60 is provided near the end, and the exhaust/drain pipe 6 2 is connected to the exhaust/drain port 60. In the processing chamber 4 8 of such a configuration, the liquid discharged to the bottom surface naturally flows to the one end side along the inclined surface, and is discharged from the exhaust/drain port 60 through the exhaust/drain pipe 62. Next, the processing chamber 64 in the cross-sectional view in the substrate transport direction shown in FIG. 6 is a sealed type having a substrate carrying port 66 and a substrate carrying port 68. Inside the processing chamber 64, the processing tools 70a, 7 0 b The substrate transport path is sandwiched between the upper and lower sides of the substrate. In addition, between the top surface of the processing chamber 64 15 312XP/invention specification (supplement)/94-04/93139789 1283013 and the processing tool 70a, and between the bottom surface of the processing chamber 64 and the processing tool 70b, respectively The partition walls 7 1 a and 7 1 b partition the internal space of the processing chamber 64 in the substrate transport direction by the partition walls 7 1 a and 7 1 b, and the front and rear internal spaces are formed on the substrate W and processed. The passages between the opposing faces of the tools 7 1 a, 71 b are connected in a flow path. Next, on the top surface and the bottom surface of the processing chamber 64, gas supply ports 7 2 a and 7 2 b are provided on the front side in the substrate transport direction at the position where the partition walls 7 1 a and 7 1 b are formed, respectively. The gas supply ports 7 2 a and 7 2 b are connected to the air supply pipes 74a and 74b, respectively. Further, at the top surface and the bottom surface of the processing chamber 64, exhaust ports 7 6 a and 7 6 b are provided on the front side of the substrate conveying direction at the positions where the partition walls 71a and 71b are formed, and the exhaust ports are provided at the respective exhaust ports. 7 6 a, 7 6 b are connected to the exhaust pipes 78a and 78b, respectively. In the processing chamber 64 having such a configuration, the substrate W is carried into the processing chamber 64, and even if the internal space of the processing chamber 64 is divided into the upper and lower portions by the substrate W as shown in FIG. 6, the air is supplied through the air. The tubes 7 4 a and 7 4 b supply the flushing air to the upper side space and the lower side space of the substrate conveyance path, respectively, and the space from the upper side of the substrate conveyance path through the exhaust pipes 7 8 a and 7 8 b The lower side space separates the air. Therefore, by appropriately adjusting and controlling the supply flow rate of the air in the processing chamber 64 and the flow rate of the exhaust gas from the processing chamber 64, the internal environment and the external environment of the processing chamber 64 can be surely insulated. Further, since the air in the processing chamber 64 flows as indicated by a broken line in Fig. 6, by forming such a gas stream, it is possible to prevent the mist (particles) from adhering to the surface of the substrate W which has been processed. 7 to 10 are cross-sectional views showing another configuration example of the processing chamber along the direction of substrate conveyance 16 312 XP / invention specification (supplement) / 94-04/93139789 1283013. The processing chamber 80 is also a sealed type having a substrate carrying port 8 2 and a substrate carrying port 8 4, and a processing tool 86 is provided inside the processing chamber 80, and the processing chamber 80 is placed in the substrate carrying port 82 and the substrate. The outlets 84 are respectively provided with a gas supply means and a gas discharge means. In other words, the substrate transfer port 82 of the processing chamber 80 is provided with an air discharge passage 88a, 88b that is close to the substrate conveyance path and that is open to the ground and to the next pair on the upper side and the lower side of the substrate conveyance path. The air supply pipes 90a and 90b that are connected to the air supply source (not shown) are connected to each of the air discharge passages 8 8 a and 8 8 b. Further, an air suction passage that is adjacent to the air discharge passages 8 8 a and 8 8 b and close to the substrate conveyance path and opens upward and downward with respect to the ground is provided on the upper side and the lower side of the substrate conveyance path. 92a and 92b are connected to the exhaust pipes 94a and 94b which are connected to the vacuum exhaust pump (not shown) in the respective air suction passages 92a and 92b. The air discharge passages 88a and 88b and the air suction passages 9 2 a and 9 2 b are provided so as to cover the entire opening width of the substrate transfer port 8 2 (the opening width in the direction orthogonal to the substrate conveyance direction). Then, the air discharge air is discharged from the air discharge port toward the substrate conveyance path from the air discharge port 88a, 88b, and the discharged air is sucked into the air suction passages 92a and 92b through the air intake port, and is carried in the substrate as will be described later. Port 82 forms an air curtain. In the same manner, in the substrate transfer port 8 of the processing chamber 80, the upper and lower sides of the substrate transport path are provided, and the air is provided close to the substrate transport path and is opened to the ground. The discharge passages 96a and 96b are connected to each of the air discharge passages 9 6 a and 9 6 b to be connected to each other. 17 312XP/Invention Manual (Supplement)/94-(M/93139789 1283013 continues to the air supply source (Fig. The air supply pipes 9 8 a and 9 8 b are not shown in the upper side and the lower side of the substrate conveyance path, and the adjacent air discharge paths 9 6 a and 9 6 b are provided and are close to the substrate conveyance. The air intake passages 100a and 100b are connected to the air intake passages 100a and 100b, respectively, and are connected to each of the air intake passages 1 0 0 a and 1 0 0 b to be connected to the vacuum exhaust pump (not shown in the drawing). Exhaust pipe 1 0 2 a, 1 0 2 b. Although not shown in the drawings, each air supply pipe 90a, 90b, 98a, 98b and each exhaust pipe 9 4 a, 9 4 b, 1 0 2 a, 1 0 2 b are respectively inserted and provided with an opening and closing control valve. Then, the control device is used to switch and control each opening and closing control Thereby, an air curtain is often formed in the substrate carrying inlet 8 2 and the substrate carrying out port 8 4, so that the internal environment and the external environment of the processing chamber 80 are constantly and surely isolated. The switching operation is as follows. First, as shown in FIG. 7, when the substrate W is present in the processing chamber 80, the substrate transfer port 8 2 and the substrate transfer port 8 in the processing chamber 80, respectively, from the upper and lower pair of air The air outlets of the discharge passages 88a and 88b; 96a and 96b discharge air toward the substrate conveyance path, and the discharged air bounces back on the upper surface and the lower surface of the substrate W, respectively, and is sucked into the upper and lower portions through the air suction port. The air suction passages 92a, 92b; 100a, 100b are exhausted. Accordingly, air is formed on the upper and lower sides of the substrate W of the substrate transfer port 8 2 of the processing chamber 80 and the substrate transfer port 84, respectively. Next, as shown in FIG. 8, when the substrate W is not present in the processing chamber 80, the substrate carrying port 8 2 and the substrate carrying port 8 4 in the processing chamber 80 are respectively from the upper side or the lower side (in the case of the substrate W). In the example of the figure, the air is spit on the upper side) The air discharge port of the passage 8 8 a, 9 6 a is discharged toward the substrate conveyance path. The air is sucked into the air through the air suction port. The air suction passages 9 2 b and 1 0 0 b on the lower side or the upper side (the lower side in the illustrated example) are exhausted. Accordingly, only the upper and lower pair of air discharge passages 8 8 a 8 8 b ; 96a, 96b, one of the air outlets of the 96a, 96b, and the air suction passages 92a, 92b of the upper and lower pairs; 100a, 100b, only the air discharge passage with the discharge air is opposite Air is sucked into the air intake port on the side, whereby an air curtain is formed in the substrate carrying inlet 8 2 and the substrate carrying port 84 of the processing chamber 80, respectively. Further, as shown in Fig. 9, when the front end of the substrate W is located in the processing chamber 80, the substrate is carried in the inlet 82 of the processing chamber 80, and the air is discharged from the upper and lower air discharge passages 8 8 a, 8 8 b. The outlets discharge air toward the substrate conveyance path, and the discharged air is respectively bounced back on the upper surface and the lower surface of the substrate W, and are respectively sucked into the upper and lower pair of air suction passages 92a and 92b through the air suction port. exhaust. Accordingly, an air curtain is formed on each of the upper and lower sides of the substrate W of the substrate carrying inlet 8 of the processing chamber 80. On the other hand, in the substrate discharge port 84 of the processing chamber 80, the air discharge port of the air discharge passage 967a from the upper side or the lower side (upward side in the illustrated example) discharges air toward the substrate conveyance path. The discharged air is sucked into the air suction passage 100b on the lower side or the upper side (the lower side in the illustrated example) through the air suction port and is exhausted. Accordingly, an air curtain is formed at the substrate carrying opening 84 of the processing chamber 80. Further, as shown in FIG. 10, when the rear end of the substrate W is located in the processing chamber 80, the substrate carrying inlet 8 2 in the processing chamber 80 is from the upper side or the lower side (upper side in the illustrated example) The air discharge port of the air discharge passage 8 8 a is discharged to the substrate conveyance path toward the 19 312XP/invention manual (supplement)/94-04/93139789 1283013, and the discharged air is sucked to the lower side through the air suction port. Or the air suction passage 92b on the upper side (the lower side in the illustrated example) is exhausted. Accordingly, an air curtain is formed in the substrate loading port 82 of the processing chamber 80. On the other hand, in the substrate transfer port 84 of the processing chamber 80, air is discharged from the air discharge ports of the upper and lower pair of air discharge passages 96a and 96b toward the substrate conveyance path, and the discharged air is above the substrate W. They are respectively bounced back and are sucked into the upper and lower pair of air suction passages 100a and 1 0 0 b through the air absorbing ports, respectively, and are exhausted. Accordingly, an air curtain is formed on each of the upper and lower sides of the substrate W of the substrate carrying outlet 84 of the processing chamber 80. In the above description of the embodiments, the processing chambers 10, 3 2, 4 8 , 6 4, and 80 are fixed and the substrate W is transported. However, the processing chamber and the substrate may be relatively moved to perform the substrate. Processing. The apparatus shown in the schematic diagram of Fig. 1 (a) is a method in which the processing chamber 106 in which the processing tool 104 is disposed is fixed and the substrate W is transported, as in the substrate processing apparatus of each of the above embodiments. The apparatus shown in Fig. 11(b) is for fixing the substrate W to relatively move the processing chamber 160 with respect to the substrate W. The apparatus shown in Fig. 1 1 (c) is such that the substrate W and the processing chamber 106 move in the same direction, respectively, so that the moving speed of the processing chamber 1 0 6 is slower than the conveying speed of the substrate W. Alternatively, the substrate W and the processing chamber 106 may be moved in mutually opposite directions. The apparatus shown in Fig. 1 1 (d) is such that the processing chamber 106a provided with the processing tool 104a and the processing chamber 106b provided with the processing tool 104b are continuously disposed in the substrate carrying direction and fixed, with respect to the processing chambers 10 6 a, 1 0 6 b Example of the structure of the transport substrate W. Of course, as in FIG. 1 1 (b) or (c), the substrate W can also be fixed to make a place 20 312XP / invention manual (supplement) /94-04/93139789 1283013 room 1 0 6 a, 1 0 6b moves relative to the substrate W, or the processing chambers 1 0 6 a, 1 Ο 6 b move at a slower speed than the substrate transport speed, and move in the same direction as the substrate W. Moreover, the apparatus shown in FIG. 11(e) is fixed to the processing chamber 1 1 0 in which the processing tools 1 0 8 a and 1 0 8 b are disposed above and below the substrate transport path, respectively. A structural example in which the substrate W is transported in the chamber 110. Of course, similarly to FIG. 11 (b) or (c), the substrate W may be fixed to move the processing chamber 1 10 to the substrate W, or the processing chamber 1 10 may be slower than the substrate transport speed. The speed moves in the same direction as the substrate W. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a schematic configuration of a substrate processing apparatus in an example of an embodiment of the present invention. Fig. 2 is a schematic plan view showing a processing chamber of the substrate processing apparatus shown in Fig. 1; Fig. 3 is a view schematically showing the schematic configuration of a substrate processing apparatus according to another embodiment of the present invention. Fig. 4 is a cross-sectional view showing the structure of the processing chamber of the substrate processing apparatus of the present invention, which is a cross-sectional view of the processing chamber in the substrate transport direction, and is a cross-sectional view of the I V - I V arrow of Fig. 5. Figure 5 is a cross-sectional view showing the direction in which the substrate of the processing chamber shown in Figure 4 is orthogonal to the direction of the substrate, and is a cross-sectional view taken along line V-V of Figure 4; Fig. 6 is a cross-sectional view showing another structural example of the processing chamber of the substrate processing apparatus of the present invention in the substrate transport direction. Fig. 7 is a cross-sectional view showing another structural example of the processing chamber of the substrate processing apparatus of the present invention in the substrate transport direction. Figure 8 is also a cross-sectional view of the processing chamber, showing the state shown in Figure 7 as 21 312XP / invention specification (supplement) /94-04/93139789 1283013 0-shaped phase diagram 8 diagram and 7 diagram and table The room S in the plane of the drawing is the same as the state of the 9th state. The state of the state is large. M3 is shown in Fig. 9 to Fig. 7. The room S in the surface of the chart is the same as the ο 11 The room to the phase of the shift to the phase of the phase ^*•1 S and the base of the plate are divided into the form of the pattern mode
WW
ο IX 明 8 說 、 號64 符板、 件基48 元 、 要32 主 、 室 S 處 106、 106a、 106b、 110 12、 34、 50、 66、 82 基板搬入口 14、 36、 52、 68、 84 基板搬出口 16 處理工具（超音波·高壓喷射洗淨·水洗處理部） 18 處理工具（氣刀乾燥處理部） 2 0、2 2 滾筒輸送器 24、 40、 56、 72a、 72b 氣體供給口 26 、 42 、 76a 、 76b 排氣口 28、 44、 58、 74a、 74b 空氣供給管 、90a、 90b、 98a、 98b 3 0、46、78a、78b、9 4 a 排氣管 94b > 102a、 102b 38 蝕刻處理部 54、 70a、 70b、 86、 104處理工具 104a、 104b、 108a、 108b 60 排氣·排液口 62 排氣·排液管 22 312XP/發明說明書(補件)/94-04/93139789 1283013 88a、88b、96a、9 6b 空氣吐出通路 92a、92b、100a、100b 空氣吸入通路ο IX ming 8 said, No. 64 symbol board, piece base 48 yuan, to 32 main, room S at 106, 106a, 106b, 110 12, 34, 50, 66, 82 substrate carrying inlets 14, 36, 52, 68, 84 Substrate discharge port 16 Processing tool (ultrasonic, high-pressure jet cleaning and water washing treatment unit) 18 Processing tool (air knife drying processing unit) 2 0, 2 2 Roller conveyors 24, 40, 56, 72a, 72b Gas supply port 26, 42, 76a, 76b exhaust ports 28, 44, 58, 74a, 74b air supply pipes, 90a, 90b, 98a, 98b 3 0, 46, 78a, 78b, 9 4 a exhaust pipe 94b > 102a, 102b 38 etching processing unit 54, 70a, 70b, 86, 104 processing tool 104a, 104b, 108a, 108b 60 exhausting/discharging port 62 exhausting/discharging tube 22 312XP/invention specification (supplement)/94-04 /93139789 1283013 88a, 88b, 96a, 9 6b air discharge passages 92a, 92b, 100a, 100b air suction passage
312XP/發明說明書(補件)/94-04/93139789 23312XP / invention manual (supplement) /94-04/93139789 23