CN1638033A

CN1638033A - Substrate processing apparatus

Info

Publication number: CN1638033A
Application number: CNA2005100039939A
Authority: CN
Inventors: 山本悟史; 志摩康正
Original assignee: Dainippon Screen Manufacturing Co Ltd
Current assignee: Skilling Group; Dainippon Screen Manufacturing Co Ltd
Priority date: 2004-01-08
Filing date: 2005-01-07
Publication date: 2005-07-13
Anticipated expiration: 2025-01-07
Also published as: TW200527503A; JP2005197487A; KR100731420B1; KR20050073420A; TWI283013B; JP4398262B2; CN100350555C

Abstract

The invention provides a substrate processing equipment wherein the equipment can be miniaturized, while the configuration equipped with a chamber in which treatment tools are arranged in the inside, and consumption of treatment liquid can be also reduced. The substrate processing equipment includes: the chamber 10 of a tightly closed type, which has a substrate carry-in port 12 and a substrate taking out port 14, the processing tools 16, 18 arranged inside the chamber, and a roller transfer 20 which transfers a substrate W are installed. The length of the chamber is made smaller than the dimensions in the substrate transfer direction. An air supply pipe 28 for supplying air for purging into the chamber, and an exhaust pipe 30 for exhausting air for purging, from the inside of the chamber are installed, and internal atmosphere and external atmosphere of the chamber are isolated from each other.

Description

Substrate board treatment

Technical field

The present invention relates to a kind of substrate board treatment of when transporting substrates such as semiconductor wafer, flat-panel monitor (FPD) glass substrate, photomask glass substrate, tellite, to substrate, implementing various processing such as the ultrasonic high pressure jet cleaning is handled, washing processing, air knife dried, etch processes, development treatment, lift-off processing.

Background technology

Semiconductor wafer, FPD are being implemented with substrates such as glass substrates under the situation of wet processed such as the ultrasonic high pressure jet cleaning is handled, washing processing, etch processes, use has the substrate board treatment of process chamber, and the internal configurations of this process chamber has processing unit such as ultrasonic high pressure cleaning system, water washing device, Etaching device.Thereby when transporting substrate, in process chamber, supply with soups such as pure water or etching solution, substrate is implemented predetermined process to substrate with conveyers such as roll-type transveyers.Like this, substrate is transported in the process chamber and is subjected to wet processed in process chamber.Therefore, see on the plane that the size of process chamber is equal to or greater than the size of substrate.

In addition, propose to have a kind ofly not possess process chamber and possess the scheme of the substrate board treatment of processing unit, the size of this processing unit on the substrate carriage direction is less than substrate.Promptly, proposition has a kind of like this substrate board treatment, it has formed the importing path that at one end has the introducing port that is used for importing treatment fluid and has at one end had and has been used for the wet processed liquid after the wet processed is discharged to the drain passageway of the outlet outside the system, and form to make and import the cross part that path and drain passageway intersect at separately the other end, possess the processing unit that constitutes towards the nozzle arrangements body of the peristome of base openings by being provided with at this cross part; Make the size of this processing unit on the substrate carriage direction less than substrate (for example, opening flat 10-163153 communique) with reference to Japanese publication spy.

In possessing the substrate board treatment that processing unit is configured in inner process chamber, along with the maximization of substrate size, process chamber will be big, maximize thereby device is whole.For example, in the device that carries out etch processes, etch process chamber, washing process chamber and dried chamber must be set continuously along the carriage direction of substrate, device is whole to maximize, and it is just big to occupy the space of cleaning in the room, and the manufacturing cost of device has also improved.In addition, because process chamber greatly also can increase the use amount of soup or pure water.

On the other hand, set handling chamber and to possess less than the substrate board treatment of the processing unit of substrate be favourable being provided with aspect space or the manufacturing cost not, also can reduce the use amount of soup or pure water, but, need prevent outflow or means of dispersing or the control outside drain passageway of soup or pure water, the formation of device or controlling organization are just complicated.The spittle of treatment fluid or boil-off gas also might be diffused into the surrounding enviroment from the peristome of nozzle arrangements body.

Summary of the invention

In view of the above-mentioned problems, the purpose of this invention is to provide a kind of substrate board treatment, it has the process chamber that processing unit is configured in inside, can either make equipment miniaturization can reduce the use amount of treatment fluid again, and owing to possess process chamber, so can easily prevent the outflow of treatment fluid or disperse, the spittle of treatment fluid or boil-off gas can not spread in surrounding enviroment yet.

The substrate board treatment of first aspect present invention comprises: the process chamber with hermetic type of substrate inlet and substrate outlet; Be arranged on the inside of this process chamber and substrate implemented the processing unit of predetermined process; The mobile device that substrate is relatively moved with respect to this processing unit, the width of described process chamber is equal to or greater than the size on the direction vertical with the direction that relatively moves of substrate, and, the length of process chamber is less than the size on the direction that relatively moves of substrate, process chamber and substrate that described processing unit is set relatively move, for with the internal environment of described process chamber and external environment condition is isolated opens, and be respectively arranged with in described process chamber supplying clean is discharged Clean-gas with the gas supply device (Clean-gas supply device) of gas with in the described process chamber gas exhausting device (exhaust apparatus) in the upper side space in the path that relatively moves of substrate and lower side space.

The substrate board treatment of second aspect present invention comprises: the process chamber with hermetic type of substrate inlet and substrate outlet; Be arranged on the inside of this process chamber and substrate implemented the processing unit of predetermined process; The mobile device that substrate is relatively moved with respect to this processing unit, the width of described process chamber is equal to or greater than the size on the direction vertical with the direction that relatively moves of substrate, and, the length of process chamber is less than the size on the direction that relatively moves of substrate, process chamber and substrate that described processing unit is set relatively move, for with the internal environment of described process chamber and external environment condition is isolated opens, be provided with: gas supply device, it is by last, following a pair of entrance side gas discharge device and last, down a pair of outlet side gas discharge device constitutes, on described, a pair of entrance side gas discharge device is the substrate porch at described process chamber down, the path and side and lower side are provided with respectively above it of relatively moving across substrate, have respectively approach substrate relatively move path and subtend in the gas vent in the path that relatively moves of substrate, spray barrier gas from this gas vent to the path that relatively moves of substrate respectively, on described, a pair of outlet side gas discharge device is the substrate exit at described process chamber down, the path and side and lower side are provided with respectively above it of relatively moving across substrate, have respectively approach substrate relatively move path and subtend in the gas vent in the path that relatively moves of substrate, spray barrier gas from this gas vent to the path that relatively moves of substrate respectively; Gas exhausting device, it is by last, following a pair of entrance side gas suction device and last, down a pair of outlet side gas suction device constitutes, on described, a pair of entrance side gas suction device is the substrate porch at described process chamber down, the path and side and lower side are provided with respectively above it of relatively moving across substrate, have respectively approach substrate relatively move path and subtend in the gas suction inlet in the path that relatively moves of substrate, suck barrier gas by this gas suction inlet respectively, on described, a pair of outlet side gas suction device is the substrate exit at described process chamber down, the path and side and lower side are provided with respectively above it of relatively moving across substrate, have respectively approach substrate relatively move path and subtend in the gas suction inlet in the path that relatively moves of substrate, suck barrier gas by this gas suction inlet respectively.

The substrate board treatment of third aspect present invention, be in the described substrate board treatment of second aspect, has switching device shifter, this switching device shifter carries out following switching: when there is substrate in the substrate inlet of described process chamber, described upper and lower a pair of entrance side gas discharge device and described upper and lower a pair of entrance side gas suction device are moved respectively; When there is substrate in the substrate outlet of described process chamber, described upper and lower a pair of outlet side gas discharge device and described upper and lower a pair of outlet side gas suction device are moved respectively; When there is not substrate in the substrate inlet of described process chamber, the entrance side gas discharge device of described upper side or lower side and the entrance side gas suction device of described lower side or upper side are moved respectively; When there is not substrate in the substrate outlet of described process chamber, the outlet side gas discharge device of described upper side or lower side and the outlet side gas suction device of described lower side or upper side are moved respectively.

The substrate board treatment of fourth aspect present invention is in each described substrate board treatment, to be provided with a plurality of described process chambers continuously on the direction that relatively moves of substrate in first～third aspect.

In each substrate board treatment of inventing of relevant first aspect and second aspect, owing to the processing unit of substrate being implemented predetermined process is configured in the inner treatment chamber of hermetic type, and with gas supply device and gas exhausting device the inner treatment chamber environment with external environment condition is isolated opens, so can easily prevent the outflow of treatment fluid or disperse, and can prevent that the spittle of treatment fluid or boil-off gas from spreading to surrounding enviroment.On the other hand,,, can save the space and reduce cost, can also reduce the use amount of treatment fluid simultaneously so can make equipment miniaturization because the length that makes process chamber is less than the size on the direction that relatively moves of substrate, and relatively moves substrate and process chamber.

In the substrate board treatment of the invention of relevant first aspect, suppress gas by gas supply device (Clean-gas supply device) supplying clean in the process chamber of hermetic type with gas and in process chamber, invade, and in process chamber, Clean-gaseous emission is come out and suppress gas to drain to the outside in process chamber with gas exhausting device (exhaust apparatus) from the outside.Like this, just can open inner treatment chamber environment and external environment condition are isolated.In addition, in the substrate board treatment of the invention of relevant first aspect, even substrate relatively moves in process chamber, by substrate the inner space of process chamber is divided into upper and lower two parts, because gas supply device and gas exhausting device are separately positioned in the upper side space and lower side space in the path that relatively moves of substrate, open so also can positively the inner treatment chamber environment be completely cut off with external environment condition.

In the substrate board treatment of the invention of relevant second aspect, spray barrier gas to the path that relatively moves of substrate respectively from each gas vent of entrance side gas discharge device and outlet side gas discharge device, each gas suction inlet by entrance side gas suction device and outlet side gas suction device sucks barrier gas respectively simultaneously, goes out the interruption-forming air curtain at the substrate of process chamber inlet and substrate respectively thus.Like this, just can open inner treatment chamber environment and external environment condition are isolated.In addition, in the substrate board treatment of the invention of relevant second aspect, even relatively moving with respect to process chamber, substrate the substrate of process chamber inlet and substrate outlet are divided into upper and lower two parts by substrate, each gas discharge device of entrance side and outlet side and each gas suction device of entrance side and outlet side are separately positioned on its upper side and lower side across the relatively moving the path of substrate, so just can be positively with the inner treatment chamber environment and external environment condition is isolated opens.

In the substrate board treatment of the invention of the relevant third aspect, when not having substrate in the process chamber, respectively in the substrate of process chamber inlet and substrate outlet from the gas vent of the gas discharge device of upper side or lower side the path injection barrier gas that relatively moves to substrate, the gas suction inlet that passes through the gas suction device of lower side or upper side simultaneously sucks barrier gas, forms air curtain thus.

The part of substrate relatively moves in process chamber, and there is substrate in the substrate of process chamber inlet, but when there is not substrate in the substrate outlet, substrate inlet at process chamber, spray barrier gas to the path that relatively moves of substrate respectively from the gas vent of upper and lower a pair of entrance side gas discharge device, each barrier with gas more respectively on substrate and below return, and the gas suction inlet by upper and lower a pair of entrance side gas suction device sucks barrier gas respectively, thus respectively at the upper and lower faces side formation air curtain of substrate.On the other hand, substrate outlet at process chamber, spray barrier gas from the gas vent of the outlet side gas discharge device of upper side or lower side to the path that relatively moves of substrate, the gas suction inlet that passes through the outlet side gas suction device of lower side or upper side simultaneously sucks barrier gas, forms air curtain thus.

Substrate relatively moves in process chamber, and the substrate of process chamber inlet and substrate export when having substrate, substrate inlet and substrate at process chamber exports respectively, spray barrier gas to the path that relatively moves of substrate respectively from the gas vent of upper and lower a pair of gas discharge device, each barrier with gas more respectively on substrate and below return, and the gas suction inlet by upper and lower a pair of gas suction device sucks barrier gas respectively, thus respectively at the upper and lower faces side formation air curtain of substrate.

There is not substrate in the substrate inlet of process chamber, and substrate exports when having substrate, substrate inlet at process chamber, spray barrier gas from the gas vent of the entrance side gas discharge device of upper side or lower side to the path that relatively moves of substrate, the gas suction inlet that passes through the entrance side gas suction device of lower side or upper side simultaneously sucks barrier gas, forms air curtain thus.On the other hand, substrate outlet at process chamber, spray barrier gas to the path that relatively moves of substrate respectively from the gas vent of upper and lower a pair of outlet side gas discharge device, each barrier with gas more respectively on substrate and below return, and the gas suction inlet by upper and lower a pair of outlet side gas suction device sucks barrier gas respectively, thus respectively at the upper and lower faces side formation air curtain of substrate.

By above effect can be all the time positively the inner treatment chamber environment and external environment condition is isolated opens.

In the substrate board treatment of the invention of relevant fourth aspect, by the process chamber of a plurality of continuous settings substrate is implemented multiple processing continuously, for example etch processes, washing are handled and dried.And because the length of each process chamber is less than the size on the direction that relatively moves of substrate, so maximization that can restraining device integral body.

Description of drawings

Fig. 1 is the example that embodiments of the present invention are shown, the schematic diagram that the schematic configuration of substrate board treatment is shown.

Fig. 2 is the general view of the process chamber of substrate board treatment shown in Figure 1.

Fig. 3 illustrates the schematic diagram that the summary of the substrate board treatment of other embodiments of the invention constitutes.

Fig. 4 illustrates the configuration example of the process chamber of substrate board treatment of the present invention, is the sectional drawing along the substrate carriage direction of process chamber, is the IV-IV cutaway view of Fig. 5.

Fig. 5 is the sectional drawing on the direction vertical with the substrate carriage direction of process chamber shown in Figure 4, is the V-V cutaway view of Fig. 4.

Fig. 6 is the sectional drawing along the substrate carriage direction of other configuration examples that the process chamber of substrate board treatment of the present invention is shown.

Fig. 7 is the sectional drawing along the substrate carriage direction of other configuration examples that the process chamber of substrate board treatment of the present invention is shown.

Fig. 8 is the sectional drawing of the process chamber of this configuration example, and the view of the state different with state shown in Figure 7 is shown.

Fig. 9 is the sectional drawing of the process chamber of this configuration example, and the view of the state different with state shown in Figure 8 with Fig. 7 is shown.

Figure 10 is the sectional drawing of the process chamber of this configuration example, and the view of the state different with Fig. 7～state shown in Figure 9 is shown.

Figure 11 A～Figure 11 E is the schematic diagram of the situation of representing that respectively substrate and process chamber relatively move.

Embodiment

With reference to Fig. 1～Figure 11 enforcement the preferred embodiments of the present invention are described.

This substrate board treatment be provided with have substrate be transported into mouthfuls 12 and substrate transport the process chamber 10 of mouthfuls 14 hermetic type, in process chamber 10 internal configurations ultrasonic high pressure jet cleaning washing handling part 16 and air knife dried portion 18 are arranged, as the processing unit of substrate W being implemented predetermined process.Ultrasonic high pressure jet cleaning washing handling part 16 and air knife dried portion 18 are configured in its upper side and lower side respectively across the transporting the path of substrate W.In addition, also be provided with roll-type transveyer 20, be used for a substrate W to be transported in the process chamber 10, in process chamber 10, to transport substrate W and in process chamber 10, substrate W is transported.

Shown in the general view among Fig. 2, the width of process chamber 10 is equal to or greater than the size on the direction vertical with carriage direction of substrate W, and its length is less than the size on the carriage direction of substrate W.Therefore, under the part of substrate W is accommodated in state in the process chamber 10, this holding portion is implemented ultrasonic high pressure jet cleaning washing handle or the air knife dried.Substrate W is transported by roll-type transveyer 20, and each several part is in proper order by process chamber 10 inside, and whole base plate W is all by process chamber 10 inside, thereby end is to the processing of whole of substrate W.Like this, since the flat shape of process chamber 10 less than substrate W, so can make the device integral miniaturization.

In addition, in process chamber 10, be respectively arranged with air supply opening 24 and exhaust outlet 26, connect supply pipe, for example air supply pipe 28 that Clean-gases such as air, nitrogen are arranged, never illustrated air supply source air supply and in process chamber 10 by air supply pipe 28 at air supply opening 24.In exhaust outlet 26 connections blast pipe 30 is arranged, by blast pipe 30 the Clean-air that supply in the process chamber 10 by air supply pipe 28 are emitted by not shown vacuum exhaust pump.Control to the gas supply flow in the process chamber 10 with from the process chamber 10 interior extraction flows that discharge by suitable adjusting, can suppress extraneous gas from the outside by substrate be transported into mouthfuls 12 or substrate transport mouthfuls 14 and enter in the process chamber 10, in addition, can suppress gas in the process chamber 10 by substrate be transported into mouthfuls 12 or substrate transport mouthfuls 14 and escape to the outside.Like this, the internal environment of process chamber 10 and external environment condition are just opened by isolated, thus can prevent to clean the spittle of employed pure water or by air knife 18 from substrate W remove and vaporized gas to process chamber 10 outdiffusions.In addition, though on process chamber 10, also be provided with discharge outlet, omitted its diagram.

Fig. 3 illustrates the schematic diagram that the summary of the substrate board treatment of other embodiments of the invention constitutes.This substrate board treatment be provided with substrate board treatment shown in Figure 1 in the same process chamber 10 of process chamber 10 (among Fig. 3, with the general component parts of substrate board treatment shown in Figure 1 mark with Fig. 1 in the same Reference numeral of employed Reference numeral, and omitted explanation) to them, simultaneously, the upstream side at process chamber 10 is provided with another process chamber 32.Process chamber 32 also be have substrate be transported into mouthfuls 34 and substrate transport the process chamber of mouthfuls 36 hermetic type, in the internal configurations of process chamber 32 the etch processes portion 38 of enforcement etch processes pair above the substrate W is arranged, the roll-type transveyer 22 that is used for transporting substrate W is arranged in the internal configurations of process chamber 32.

The same with process chamber 10, the width of process chamber 32 also is equal to or greater than the size on the direction vertical with carriage direction of substrate W, and its length is less than the size on the carriage direction of substrate W.Therefore, under the part of substrate W is accommodated in state in the process chamber 32 this holding portion is implemented etch processes, transport substrate W by roll-type transveyer 22, each several part by in the process chamber 32, comes the whole face of substrate W is carried out etch processes in order thus.In this substrate board treatment, two

process chambers

32,10 with continuous setting, substrate W is implemented etch processes and ultrasonic high pressure jet cleaning washing processing and air knife dried continuously, but, because the length of

chambers

32,10 is respectively less than the size on the carriage direction of substrate W, so can make the device integral miniaturization.

Also be respectively arranged with air supply opening 40 and exhaust outlet 42 in process chamber 32, connecting at air supply opening 40 has air supply pipe 44, and connecting at exhaust outlet 42 has blast pipe 46.The same with process chamber 10, suitably regulate the extraction flows of control to gas supply flow in the process chamber 32 and discharging in the process chamber 32, can completely cut off the environment in the process chamber 32 with external environment condition and open.

Fig. 4 and Fig. 5 represent the configuration example of process chamber, and Fig. 4 is the sectional drawing of process chamber along the substrate carriage direction, and the IV-IV cutaway view of Fig. 5 is shown, and Fig. 5 is the sectional drawing of process chamber along the direction vertical with the substrate carriage direction, is the V-V cutaway view of Fig. 4.

This process chamber 48 be have substrate be transported into mouthfuls 50 and substrate transport the process chamber of mouthfuls 52 hermetic type, internal configurations at process chamber 48 has processing unit 54, but, on the direction vertical with the carriage direction of substrate W, the bottom surface and the end face of process chamber 48 tilt, substrate W is also transported by roll-type transveyer (not shown, in Fig. 6～Figure 10 too) with the posture that is inclination on the direction vertical with the carriage direction of substrate.The width of this process chamber 48 also is equal to or greater than the size on the direction vertical with carriage direction of substrate W, and its length is less than the size on the carriage direction of substrate W.At process chamber 48, near the high side of its end face, be provided with air supply opening 56, connecting at this air supply opening 56 has air supply pipe 58, is provided with exhaust leakage fluid dram 60 near the low side of the bottom surface of process chamber 48, and connecting at this exhaust leakage fluid dram 60 has exhaust discharging tube 62.In the process chamber 48 of this structure, the discharge opeing that flows to bottom surface spontaneous current obliquely and emits by exhaust discharging tube 62 from exhaust leakage fluid dram 60 to a side side.

Sectional process chamber 64 along the substrate carriage direction shown in Figure 6 be have substrate be transported into mouthfuls 66 and substrate transport the process chamber of mouthfuls 68 hermetic type.In the inside of process chamber 64, transport the path and dispose processing unit 70a and processing unit 70b respectively with the below above it across substrate.Between the end face and processing unit 70a of process chamber 64, and be respectively arranged with partition walls 71a, 71b between the bottom surface of process chamber 64 and the processing unit 70b, two parts before and after this partition walls 71a, 71b are divided into the inner space of process chamber 64 on the substrate carriage direction, the path between the opposite face of its forward and backward inner space through being formed on substrate W and processing unit 70a, 70b and be communicated with into stream.And on the end face and bottom surface of process chamber 64, the front side that the substrate carriage direction of position is set at partition walls 71a, 71b is respectively arranged with air supply opening 72a, 72b, has connected air supply pipe 74a, 74b respectively at each air supply opening 72a, 72b.In the end face and the bottom surface of process chamber 64, the initial side that the substrate carriage direction of position is set at partition walls 71a, 71b is respectively arranged with exhaust outlet 76a, 76b, has connected blast pipe 78a, 78b respectively at each exhaust outlet 76a, 76b.

In process chamber 64 with this structure, substrate W is transported in the process chamber 64, even as shown in Figure 6, substrate W is divided into upper and lower two parts to the inner space of process chamber 64, also can separately Clean-air be supplied to upper side space and the lower side space that substrate transports the path respectively by air supply pipe 74a, 74b, in addition, separately air is emitted respectively by blast pipe 78a, 78b from upper side space and the lower side space that substrate transports the path.Therefore, suitably regulate control and supply with the gas supply flow in the process chamber 64 and the extraction flows of discharging in the process chamber 64, can positively completely cut off the internal environment of process chamber 64 with external environment condition and open.In process chamber 64, because air is mobile along the dotted line among Fig. 6, so, just can prevent that by forming such air-flow fog (particle) from adhering again on the surface of the substrate W that has handled well.

Fig. 7～Figure 10 is the sectional drawing along the substrate carriage direction of other configuration examples of expression process chamber.This process chamber 80 also be have substrate be transported into mouthfuls 82 and substrate transport the process chamber of mouthfuls 84 hermetic type.Internal configurations at process chamber 80 has processing unit 86, but in this process chamber 80, substrate be transported into mouthfuls 82 and substrate transport mouthfuls 84 and dispose feeder and exhaust apparatus respectively.

Promptly, substrate at process chamber 80 is transported into mouth 82, transport the path and side and lower side are respectively arranged with upper and lower a pair of jet path 88a, the 88b that has offered the air ejiction opening above it across substrate, both approach that substrate transports the path and relatively, connect respectively at each

jet path

88a, 88b and are connected air supply pipe 90a, the 90b that constitutes stream on the air supply source (not shown).In addition, transport the path and side and lower side are respectively arranged with upper and lower a pair of air suction way 92a, the 92b that has offered air suction inlet above it across substrate, both are adjacent to

jet path

88a, 88b respectively, and approach substrate to transport the path and relatively, connect respectively at each

air suction way

92a, 92b and be connected blast pipe 94a, the 94b that constitutes stream on the vacuum exhaust pump (not shown).

Jet path

88a, 88b and

air suction way

92a, 92b cross over substrate respectively and are transported into mouthfuls 82 whole A/F (A/F on the direction vertical with the substrate carriage direction) and are provided with.Transport path from its air ejiction opening to substrate by

jet path

88a, 88b and spray the barrier air, this air that is ejected is inhaled in air suction way 92a, the 92b by air suction inlet, thereby is transported into mouthful absolutely empty air screen barrier of 82 a formation barrier at substrate as described later.

Equally, substrate at process chamber 80 transports mouth 84, transport the path and side and lower side are respectively arranged with upper and lower a pair of jet path 96a, the 96b that has offered the air ejiction opening above it across substrate, both practise physiognomy and approach substrate over the ground and transport the path, connect respectively at each jet path 96a, 96b and are connected air supply pipe 98a, the 98b that constitutes stream on the air supply source (not shown).Transport the path and side and lower side are respectively arranged with upper and lower a pair of air suction way 100a, the 100b that has offered air suction inlet above it across substrate, both are adjacent to jet path 96a, 96b respectively, practise physiognomy and approach substrate over the ground and transport the path, connect respectively at each

air suction way

100a, 100b and be connected blast pipe 102a, the 102b that constitutes stream on the vacuum exhaust pump (not shown).

Though it is not shown, but on each

air supply pipe

90a, 90b, 98a, 98b and each

blast pipe

94a, 94b, 102a, 102b, be respectively arranged with open and close control valve, with each open and close control valve of control device difference switching controls, thereby substrate be transported into mouthfuls 82 and substrate transport mouthfuls 84 and form absolutely empty air screen barrier barrier all the time, open thereby can positively completely cut off the internal environment of process chamber 80 with external environment condition all the time.This change action carries out as follows.

At first, as shown in Figure 7, when in process chamber 80, having substrate W, the substrate of process chamber 80 be transported into mouthfuls 82 and substrate transport mouthfuls 84, respectively from upper and lower a pair of

jet path

88a, 88b; The air ejiction opening of 96a, 96b transports the path injection air to substrate respectively, each the road air that is sprayed on substrate W and below return respectively, and be drawn into upper and lower a pair of

air suction way

92a, 92b respectively by air suction inlet; Emit in 100a, the 100b.Like this, just the substrate of process chamber 80 be transported into mouthfuls 82 and the substrate upper and lower faces side that transports mouthfuls 84 substrate W form air curtain respectively.

Then, as shown in Figure 8, when in process chamber 80, not having substrate W, the substrate of process chamber 80 be transported into mouthfuls 82 and substrate transport mouthfuls 84, transport the path injection air to substrate respectively from upper side or the jet path 88a of lower side (being upper side), the air ejiction opening of 96a respectively illustrated example, the air that is sprayed is inhaled into by air suction inlet in air suction way 92b, the 100b of lower side or upper side (being lower side in illustrated example) and emits.Like this, just only from upper and lower a pair of

jet path

88a, 88b; The air ejiction opening injection air of a side among 96a, the 96b is by only being drawn into upper and lower a pair of

air suction way

92a, 92b to air; In the air suction inlet of jet passage side in the face of the ejection air among 100a, the 100b, thus the substrate of process chamber 80 be transported into mouthfuls 82 and substrate transport mouthfuls 84 and form air curtain respectively.

As shown in Figure 9, when the front end of substrate W is in the process chamber 80, substrate at process chamber 80 is transported into mouth 82, air ejiction opening from upper and lower a pair of

jet path

88a, 88b transports the path injection air to substrate respectively, each the road air that is sprayed on substrate W and below return respectively, and be drawn into respectively in upper and lower a pair of air suction way 92a, the 92b by air suction inlet and emit.Like this, just the upper and lower faces side that is transported into mouthfuls 82 substrate W at the substrate of process chamber 80 forms air curtain respectively.On the other hand, substrate at process chamber 80 transports mouth 84, transport the path injection air from the air ejiction opening of the jet path 96a of upper side or lower side (being upper side illustrated example) to substrate, the air that is sprayed is inhaled into by air suction inlet in the air suction way 100b of lower side or upper side (being lower side in illustrated example) and emits.Like this, just the substrate at process chamber 80 transports mouthful 84 formation air curtains.

As shown in figure 10, the rear end of substrate W is in process chamber 80 time, substrate at process chamber 80 is transported into mouth 82, transport the path injection air from the air ejiction opening of the jet path 88a of upper side or lower side (being upper side illustrated example) to substrate, the air that is sprayed is inhaled into by air suction inlet in the air suction way 92b of lower side or upper side (being lower side in illustrated example) and emits.Like this, just the substrate at process chamber 80 is transported into mouthful 82 formation air curtains.On the other hand, substrate at process chamber 80 transports mouth 84, air ejiction opening from upper and lower a pair of jet path 96a, 96b transports the path injection air to substrate respectively, each the road air that is sprayed on substrate W and below return respectively, and be drawn in upper and lower a pair of air suction way 100a, the 100b by air suction inlet and emit.Like this, just the upper and lower faces side that transports mouthfuls 84 substrate W at the substrate of process chamber 80 forms air curtain respectively.

In the explanation of each above-mentioned embodiment, fixedly

process chamber

10,32,48,64,80, and transport substrate W, but so long as process chamber and substrate relatively move and to carry out the processing of substrate just passable.As the substrate board treatment of the various embodiments described above, the device of schematic diagram shown in Figure 11 A is that fixing internal disposes the process chamber 106 of processing unit 104 and transports the substrate board treatment of substrate W; Device shown in Figure 11 B is fixing base W and substrate board treatment that process chamber 106 is moved relative to substrate W.Device shown in Figure 11 C is that substrate W and process chamber 106 are moved along same direction, and the translational speed of process chamber 106 is lower than the travelling speed of substrate W.Substrate W and process chamber 106 are oppositely moved mutually.Device shown in Figure 11 D is the process chamber 106b that has fixedly installed the process chamber 106a that disposes processing unit 104a continuously and dispose processing unit 104b on the substrate carriage direction, transports substrate W with respect to process chamber 106a, 106b.Certainly, the same with Figure 11 B or Figure 11 C, also can fixing base W and process chamber 106a, 106b are moved with respect to substrate W, perhaps along moving process chamber 106a, 106b with the speed slower than substrate W travelling speed with substrate W equidirectional.Device shown in Figure 11 E is to be fixed with process chamber 110, and this process chamber 110 is to transport the path and distinguish configuration process device 108a, 108b with the below above it across substrate, and with respect to process chamber 110 moving substrate W.Certainly, also can be the same with Figure 11 B or Figure 11 C, fixing base W, and process chamber 110 is moved with respect to substrate W, perhaps along moving process chamber 110 with the speed slower than substrate W travelling speed with substrate W equidirectional.

Claims

1, a kind of substrate board treatment comprises: the process chamber with hermetic type of substrate inlet and substrate outlet; Be arranged on the inside of this process chamber and substrate implemented the processing unit of predetermined process; The mobile device that substrate is relatively moved with respect to this processing unit is characterized in that,

The width of described process chamber is equal to or greater than the size on the direction vertical with the direction that relatively moves of substrate, and the length of process chamber is less than the size on the direction that relatively moves of substrate, and process chamber and substrate that described processing unit is set relatively move,

For with the internal environment of described process chamber and external environment condition is isolated opens, and be respectively arranged with in described process chamber supplying clean is discharged Clean-gas with the gas supply device of gas with in the described process chamber gas exhausting device in the upper side space in the path that relatively moves of substrate and lower side space.

2, a kind of substrate board treatment comprises: the process chamber with hermetic type of substrate inlet and substrate outlet; Be arranged on the inside of this process chamber and substrate implemented the processing unit of predetermined process; The mobile device that substrate is relatively moved with respect to this processing unit is characterized in that,

For with the internal environment of described process chamber and external environment condition is isolated opens, be provided with:

Gas supply device, it is by last, following a pair of entrance side gas discharge device and last, down a pair of outlet side gas discharge device constitutes, on described, a pair of entrance side gas discharge device is the substrate porch at described process chamber down, the path and side and lower side are provided with respectively above it of relatively moving across substrate, have respectively approach substrate relatively move path and subtend in the gas vent in the path that relatively moves of substrate, spray barrier gas from this gas vent to the path that relatively moves of substrate respectively, on described, a pair of outlet side gas discharge device is the substrate exit at described process chamber down, the path and side and lower side are provided with respectively above it of relatively moving across substrate, have respectively approach substrate relatively move path and subtend in the gas vent in the path that relatively moves of substrate, spray barrier gas from this gas vent to the path that relatively moves of substrate respectively;

Gas exhausting device, it is by last, following a pair of entrance side gas suction device and last, down a pair of outlet side gas suction device constitutes, on described, a pair of entrance side gas suction device is the substrate porch at described process chamber down, the path and side and lower side are provided with respectively above it of relatively moving across substrate, have respectively approach substrate relatively move path and subtend in the gas suction inlet in the path that relatively moves of substrate, suck barrier gas by this gas suction inlet respectively, on described, a pair of outlet side gas suction device is the substrate exit at described process chamber down, the path and side and lower side are provided with respectively above it of relatively moving across substrate, have respectively approach substrate relatively move path and subtend in the gas suction inlet in the path that relatively moves of substrate, suck barrier gas by this gas suction inlet respectively.

3, substrate board treatment according to claim 2, it is characterized in that, has switching device shifter, this switching device shifter carries out following switching: when there is substrate in the substrate inlet of described process chamber, described upper and lower a pair of entrance side gas discharge device and described upper and lower a pair of entrance side gas suction device are moved respectively; When there is substrate in the substrate outlet of described process chamber, described upper and lower a pair of outlet side gas discharge device and described upper and lower a pair of outlet side gas suction device are moved respectively; When there is not substrate in the substrate inlet of described process chamber, the entrance side gas discharge device of described upper side or lower side and the entrance side gas suction device of described lower side or upper side are moved respectively; When there is not substrate in the substrate outlet of described process chamber, the outlet side gas discharge device of described upper side or lower side and the outlet side gas suction device of described lower side or upper side are moved respectively.

4, according to each described substrate board treatment in the claim 1～3, it is characterized in that, on the direction that relatively moves of substrate, be provided with a plurality of described process chambers continuously.