1246171 13747twf.doc/m 九、發明說明： 【發明所屬之技術領域】 垃入二月T有關於一種承載器之晶片接觸窗口及 =開口與傳動孔製程，且特別是有關於一種可 ί ^(FleXlble)之軟片式承載器'㈣m carrier)的接觸 窗口及接合墊開口與傳動孔製程。 【先前技術】 隨著科技的進步與生活品質的持續提升，加上 3C產業的整合與持續成長，使得積體電路 circuit，IC)的應用領域越來越廣。為了使結構脆弱 的積體電路裸晶片(die)能受到有效的保護，並同時 使積體電路裸晶片能與外界相互傳遞訊號，才發展 出晶片封裝（package)技術。目前已經研發出的晶片 封裝技術眾多，以晶片接合技術來說，常見的晶片 接合技術為打線（Wire B0nding，W/B)、覆晶（FHp Chip， F/C)及捲帶式自動接合（Tape Am〇matic恥^^叫， TAB)等，其中捲帶式自動接合技術係將晶片接合於 一軟片式承載器上，而封裝完成後的封裝體不但體 積小、重量輕，且由於軟片本身具有可折彎的特性， 故可使得封裝體在後續組裝上更具有彈性。 圖1A〜1F緣示為習知之一種軟片式承載器之 晶片接觸窗口及接合墊開口與傳動孔製程。請參照 圖1A，首先，先提供一薄膜no與一黏著層12〇， 其中黏著層120係配置於薄膜11〇上。請參照圖1β， 接著，使用一沖壓模具（未繪示）對薄膜11〇與黏著 1246171 13747twf.doc/m 層120進行衝孔（Punch)，而產生一晶片接觸窗口 yo、多個預定之接合墊開口 132與多個傳動孔u 薄膜110及黏著層12〇係藉由這些傳動孔134而配 f於-輸达帶（未繪示）上，並藉由此輸送帶而帶 動溥膜110及黏著層120前進。 請芩照圖ic，接著，將一金屬層14〇配置於 ίΐ層120上，並藉由黏著層120之黏著性而將金 !層_接合於薄膜110 i ’其中這些預定之接合 開口 132係暴露出局部之金屬層14〇。請參昭圖 出，之後，形成多個軟性膠材（nex c〇at)i5^於 些預定之接合墊開口 132内’其中這些軟性膠材⑼ 係用以增加此軟片式承載器之折合性。請來昭 1E，然後’钱刻並圖案化金屬層14〇，使得這^ 定之接合墊開口 132所暴露之金屬層14〇可作^貝 3= 142。請參照® &接著，形成-金屬保 =160於稞露之金屬層14〇上，以防止裸露之全 屬層140接觸到外界空氣而氧化。之後，進 =測步驟，以確保薄膜11〇與金屬層14〇之= :外硯良好’而完成習知軟片式承載器之晶片：： 固口 130及接合墊開口 132與傳動孔134的製作。 值得注意的是，由於習知每一批' 針對不同晶片之尺寸規格與不同之：：： 人^s未繪不）而設計出對應的晶片接觸窗口及 =開口與傳動孔位置，而這些晶片接觸窗口及接 σ墊開口與傳動孔係利用沖壓模具對薄膜及黏著層 1246171 13747twf.d〇c/m 進行衝孔而形成。因此，對於不同晶片之尺寸規格 與不同之接點位置設計，則必須特別訂做並使用不 同規格的沖壓模具，然而，製作模具所需耗費的時 間、成本卻相當地高，如此，在生產少量多樣之軟 片式承載器時，將明顯大幅地增加了軟片式承載哭 之晶片接觸窗口及接合墊開口與傳動孔的製造成 【發明内容】 有鏗於此，本發明之目的就是在提供一種軟片 式承載杰之晶片接觸窗口及接合墊開口與傳動孔製 程^其雷射成孔方法，可有效地節省軟片式承載^ 之晶片接觸窗口及接合墊開口與傳動孔的製造成 為達本發明之上述目的，本發明提出一種軟片 1承載器之晶片接觸窗口及接合墊開口與傳動孔製 用於一捲帶自動接合(Tape Aut〇mated Bonding， 封裝體的製程技術’此軟片式承載器之 及接ί塾開口與傳動孔製程至少包含下列數 提供一薄膜。接著，藉由-雷射而 二#,於ί ί面上形成多個開σ，其中這些開口之 觸窗Η ί出一晶片，並作為此晶片的一晶片接 之：开心分之這些開口係作為至少-傳動孔。 口係美金屬層於此薄膜上’而其他之這些開 的多個接合墊的開口屬層，亚作為此金屬層之預定 1246171 13747twf.doc/m 之晶片接觸窗口及接合墊開口與傳動孔制^承裁器 在，供薄膜之後’更包括形成—黏著層腊其中 使得金屬層可藉由黏著層而接合於薄膜上。’、上， 依照本發明的較佳實施例所述之軟 、 之晶片接觸窗口及接合墊開口與傳動孔制承载為 將金屬層配置於薄膜上之方法包括—壓合衣製呈’其中 依照本發明的較佳實施例所述之軟 之晶片接觸窗口及接合墊開口與傳動孔:。7載器 f形成金屬層於薄膜上之後，更包括圖案:匕：屬J中 其中延伸於晶片接觸窗口上之部分的金屏葛層， 引腳’且這些開口所暴露出局部全二^個 接合墊。 〈邊I屬層為多個 依照本發明的較佳實施例所述之軟片 之晶片接觸窗口及接合墊開口與傳動孔製程， 層於薄膜上之後，更包括形成多個軟性 膝材於預疋之這些接合墊的開口内。 注 依照本發明的較佳實施例所述之軟片 之，片舍觸窗口及接合墊開口與傳動孔製程 在提供薄膜之後，更包括形成多個成孔記號於^ i而S些開口係藉由雷射貫穿這些成孔記號與薄 為達本發明之上述目的，本發明另提出—種♦ 法’適用於將一薄膜穿孔，而此雷射成： /匕括以下之步驟：藉由一雷射而於薄膜之表面 1246171 13747twf.doc/m 上形成多個開口，其中〗古此 曰y 、，仏也/、甲纪些開口之一係適於暴露出 一曰日片’並作為此晶只沾 . H日〆、也 日月的—接觸窗口，而部分之這 t露出局部之預定的-金屬層’並作 為虫屬層之預疋的夕個接合墊開口，且其他之這些 開口係作為多個傳動孔。 依照本發明的較伟每& ^ 法，在形成這些開口之v更户i述之雷射成孔方 號於薄膜上’且料開μ孔記 記號與薄膜而形成係措由雷射貫穿這些成孔 窗口 本發明之軟片式承載器之晶片接觸 固及接合㈣σ與傳動孔製程及其雷射成孔方法 :?藉就可貫穿薄膜而形成晶片接觸窗口、 程，本發明軟片式二 程將毋須製作模具，故可有效：節 載器之晶侧窗口及接合塾開口 為讓本發明之上述和其他目的、特徵和優 it下了文特舉健實施例，並配合所_式·，作詳細 【實施方式】 片=it〜2E綠示為本發明較佳實施例之—種教 制：承載态之晶片接觸窗口及接合墊開口 =程。本發明軟片式承載器係適用於-捲 己（Tape Automated B〇nding，TAB)封裝體的製程技 1246171 13747twf.doc/m 術。請參照圖2A，首先，先提供一薄膜21〇，此薄 巧210的材質例如為聚乙醯胺（p〇lyimide)等。浐繼 績參照圖2A，接著，將一黏著層22〇配置於薄膜2⑺ 上。請參照圖2B ’之後，例如使用一雷射而於 210與黏著層220内形成多個開口，其中這些口 係貝穿薄m 21〇與黏著層220而形成一晶片接 口 230、多數個預定之接合墊開口 232以及多數 傳動孔234。晶片接觸窗口 23〇係適於暴露出一晶 片（未繪示）。這些預定之接合墊開口 232係適於^ 露^局部之預定的一金屬層（未緣示）。薄膜21〇^ 漆占Ϊ層220係可藉由這些傳動孔234而配置於一輸 (未繪示）上，並藉由此輸送帶而帶動薄膜2⑺ 及黏著層220前進。 、 凊參照圖2C，然後，形成一金屬層240於薄 膜210上’此金屬豸24〇乃是例如藉由黏著層 =合(laminate)於薄膜21()上，其中金屬層24 材貝例如為銅箱或其他金屬等。請參照圖2D，接 2多個軟性膠材（Flex CQat) 25G於這些預定之接 口開π 232内’其中這些軟性膠材25〇的材質包 括聚乙醯胺(P〇lyimide)’而這些軟性膠材25〇係 加此軟片式承載器之折合性。請參照圖2e，之 +刻金屬層240’使得這些預定之接合墊開口 232 路之金屬層240可作為多個接合墊242。至於 =金屬層240之製程步驟例如包括先以-化學研 1,1 c emical p〇llsh)製程而平坦化金屬層24〇之表 1246171 13747twf.doc/m 面，之後，塗佈光阻於金屬層240上、光阻曝光、 顯影、塗佈膠體並底面覆蓋（back coat)於薄膜210 上、以浸潰法將金屬層240浸泡於蝕刻液中而圖案 化金屬層240及去光阻等多道步驟（皆未繪示），在 此便不再贅述。值得一提的是，延伸於晶片接觸窗 口 230上之部分的金屬層240為多個引腳244，這 些引腳244可與一晶片之多數個凸塊（bonding pad) 電性連接（未繪示）。然後，例如進行一成品檢測步 驟，以確保薄膜210與金屬層240之圖案外觀良好， 以完成本發明軟片式承載器之晶片接觸窗口 230及 接合墊開口 232與傳動孔234的製作。 至於在製作完成本發明軟片式承載器之晶片接 觸窗口及接合墊開口與傳動孔之後的後續製程，更 包括下列之步驟。圖2F繪示為圖2E之軟片式承載 器，其金屬保護層形成於圖案化金屬層的結構示意 圖。請參照圖2F，接著，例如以一電鍍（plating)製 程而形成一金屬保護層260於金屬層240的圖案上， 以防止裸露之金屬層240接觸到外界空氣而氧化， 其中金屬保護層260之材質例如為錫等。圖2G繪 示為圖2F之軟片式承載器，其銲罩層（solder mask ) 形成於部分之金屬保護層上的結構示意圖。請參照 圖2G，接著，例如以一印刷（plating)製程而形成一 銲罩層（solder mask) 270於部分之金屬保護層260 上。圖2H繪示為圖2G之軟片式承載器，其金屬保 護層形成於未被銲罩層覆蓋之金屬保護層上的結構 11 1246171 13747twf.doc/m ΐ i ^請/12H ’接著，使用例如—電錢 二矛而形成—金屬保護層28〇於未被銲 保護層上，其中金屬保護層280之： =為錫等。之後，進行—成品檢測步驟，以確 /W寻膜210與金屬層24〇之圖案外觀良好。1246171 13747twf.doc / m IX. Description of the invention: [Technical field to which the invention belongs] In February, T related to the wafer contact window of a carrier and the process of openings and transmission holes, and in particular, it relates to a method that can be used. ^ ( FleXlble) 's "承载 m carrier" contact window and bonding pad opening and transmission hole process. [Previous technology] With the advancement of technology and the continuous improvement of quality of life, and the integration and continuous growth of the 3C industry, the application fields of integrated circuit (IC) have become wider and wider. In order to protect the structurally fragile integrated circuit die, and at the same time to enable the integrated circuit bare chip to communicate with the outside world, the package technology was developed. Many chip packaging technologies have been developed so far. In terms of chip bonding technology, common chip bonding technologies are wire bonding (W / B), flip chip (FHp Chip, F / C), and tape-and-reel automatic bonding ( Tape Am〇matic (TAB), etc., in which the tape-and-reel automatic bonding technology bonds the wafer to a flexible chip carrier, and the package after the package is not only small in size and light in weight, but also because of the flexible film itself It has the characteristics of being bendable, so that the package can be more flexible in subsequent assembly. Figures 1A to 1F show the wafer contact window, bonding pad opening, and transmission hole process of a conventional soft-film carrier. Referring to FIG. 1A, first, a thin film no and an adhesive layer 120 are provided. The adhesive layer 120 is disposed on the thin film 110. Please refer to FIG. 1β. Next, a punching die (not shown) is used to punch the film 11 and the adhesive layer 1246171 13747twf.doc / m layer 120 to produce a wafer contact window yo and a plurality of predetermined bondings. The pad opening 132, the plurality of transmission holes u, the film 110, and the adhesive layer 120 are arranged on a conveying belt (not shown) through these transmission holes 134, and the diaphragm 110 and the film 110 are driven by the conveyor belt. The adhesive layer 120 advances. Please refer to FIG. Ic, and then, a metal layer 14 is disposed on the thin layer 120, and the gold layer is bonded to the film 110 by the adhesiveness of the adhesive layer 120. Among these predetermined bonding openings 132 are The local metal layer 14 is exposed. Please refer to the drawing, and then, form a plurality of soft rubber materials (nex coat) i5 ^ in some predetermined bonding pad openings 132, where these soft rubber materials are used to increase the flexibility of the flexible sheet carrier. . Please come to Zhao 1E, and then ’move and pattern the metal layer 140, so that the metal layer 140 exposed by the bonding pad opening 132 may be used as 贝 3 = 142. Please refer to ® & Next, form a metal barrier of 160 on the exposed metal layer 14 to prevent the exposed metal layer 140 from contacting the outside air and oxidizing. Then, the test step is performed to ensure that the thin film 11 and the metal layer 14 are equal to the outer diameter of the film carrier, and the wafer of the conventional flexible film carrier is completed: the production of the solid opening 130, the bonding pad opening 132, and the transmission hole 134. . It is worth noting that due to the knowledge of each batch 'different sizes and specifications for different wafers ::: ^ s (not shown), corresponding wafer contact windows and = openings and drive hole positions are designed, and these wafers The contact window and the σ pad opening and the transmission hole are formed by punching the film and the adhesive layer 1246171 13747twf.doc / m with a stamping die. Therefore, for different chip sizes and different contact position designs, stamping dies with different specifications must be customized and used. However, the time and cost required to make the dies are quite high. In the case of a variety of flexible film carriers, the wafer contact window, the bonding pad opening, and the transmission hole of the flexible film carrier are significantly increased. [Summary of the Invention] The purpose of the present invention is to provide a flexible film. The wafer contact window and bonding pad opening and transmission hole manufacturing process of the wafer carrying bearing ^ its laser hole formation method can effectively save the manufacture of the wafer contact window, bonding pad opening and transmission hole of the flexible wafer bearing ^ reaching the above-mentioned invention. For the purpose, the present invention proposes a wafer contact window and a bonding pad opening and a driving hole of a flexible film 1 carrier for a tape automatic bonding (Tape Automated Bonding, package process technology 'the sum of the flexible carrier ί 塾 The process of opening and transmission hole contains at least the following numbers to provide a film. Then, by -laser and two #, 于 ί 面A plurality of openings σ are formed on the opening, and the openings of these openings touch a wafer and connect them as a wafer of the wafer: the openings are divided into at least-transmission holes. The mouth is a metal layer on the film. 'The other openings of the multiple bonding pads are layers, and the wafer contact window and the bonding pad openings and drive holes made of this metal layer are intended to be 1246771 13747twf.doc / m. 'It further includes forming-adhesive layer wax which allows the metal layer to be bonded to the film through the adhesive layer.', Above, the soft, wafer contact window and bonding pad opening and transmission according to the preferred embodiment of the present invention. The method of hole-based loading for arranging a metal layer on a film includes:-pressing a garment to make a soft wafer contact window and a pad opening and a driving hole according to the preferred embodiment of the present invention. f After the metal layer is formed on the film, it further includes a pattern: dagger: a layer of Jinpingge which is a part of J that extends over the contact window of the wafer, the pins', and all of the bonding pads exposed by these openings. <The edge I layer is a plurality of wafer contact windows, bonding pad openings, and transmission hole processes according to the preferred embodiment of the present invention. After the layer is formed on the film, it further includes forming a plurality of soft knee materials in the pre-sacrifice. In the openings of these bonding pads. Note In the film according to the preferred embodiment of the present invention, after the film is provided with the film, the film touch window, the bonding pad openings, and the transmission hole process further include forming a plurality of hole-forming marks in ^ In order to achieve the above-mentioned object of the present invention, the openings are penetrated by lasers through the hole-forming marks and thin layers. The present invention also proposes a method-which is suitable for perforating a thin film, and the laser is: The following steps: A plurality of openings are formed on the surface of the film by a laser 1246171 13747twf.doc / m, among which 古, 仏, 仏, and 1 are suitable for exposing an opening. "Sun film" and as the crystal only dip. H sundial, also sun and moon-contact the window, and part of this t exposes a local predetermined-metal layer "and serves as a pre-saturated bonding pad for the insect layer Openings, and other openings as multiple Moving hole. According to the more advanced method of the present invention, in the formation of these openings, the laser holes described above are formed on the film, and the μ hole mark and the film are opened to form a system that is penetrated by the laser. These hole-forming windows The wafer contact fixation and bonding of the film carrier of the present invention and the process of σσ and transmission holes and the method of laser hole formation:? The wafer contact window and process can be formed by penetrating the film. It will not be necessary to make a mold, so it is effective: the crystal side window and the joint opening of the nodal device are provided with the above-mentioned and other objects, features, and advantages of the present invention, and cooperate with the following formulas, [Detailed description] [Embodiment] The sheet = it ~ 2E green is the preferred embodiment of the present invention—a kind of teaching: the wafer contact window and the bonding pad opening in the loaded state = process. The film carrier of the present invention is suitable for the process technology of a Tape Automated Bonding (TAB) package. 1246171 13747twf.doc / m. Please refer to FIG. 2A. First, a thin film 21 is provided. The material of the thin 210 is, for example, polyimide.浐 Referring to FIG. 2A, an adhesive layer 22 is disposed on the film 2⑺. Please refer to FIG. 2B ′. For example, a laser is used to form a plurality of openings in the 210 and the adhesive layer 220. These openings are formed through a thin m 21 〇 and the adhesive layer 220 to form a wafer interface 230. The bonding pad opening 232 and the plurality of transmission holes 234. The wafer contact window 23 is adapted to expose a wafer (not shown). The predetermined bonding pad openings 232 are a predetermined predetermined metal layer (not shown). The film 21 ^ lacquer coating layer 220 can be disposed on a conveyor (not shown) through these transmission holes 234, and the film 2 and the adhesive layer 220 are advanced by the conveyor belt. Referring to FIG. 2C, a metal layer 240 is formed on the film 210. This metal 豸 24〇 is, for example, laminated on the film 21 () by an adhesive layer, where the metal layer 24 is made of, for example, Copper boxes or other metals. Please refer to FIG. 2D, connect more than two flexible rubber materials (Flex CQat) 25G in the predetermined interface opening π 232 'wherein the material of these soft rubber materials 25 includes polyimide' and these soft materials Glue material 25 is added to the flexibility of this soft sheet carrier. Referring to FIG. 2e, the + etched metal layer 240 'allows these predetermined metal layers 240 of the bonding pad openings 232 to serve as a plurality of bonding pads 242. As for the = metal layer 240, the process steps include, for example, first planarizing the metal layer 24 with the -chemical research 1.1 c emical poll) process, and then coating the surface 12467171 13747twf.doc / m surface, and then coating the photoresist on the metal On the layer 240, photoresist exposure, development, colloid coating and back coat on the film 210, the metal layer 240 is immersed in an etching solution by the dipping method to pattern the metal layer 240 and remove photoresist. The steps (both are not shown) will not be repeated here. It is worth mentioning that the metal layer 240 extending on a part of the chip contact window 230 is a plurality of pins 244, and these pins 244 can be electrically connected to a plurality of bonding pads of a chip (not shown) ). Then, for example, a finished product inspection step is performed to ensure that the patterns of the thin film 210 and the metal layer 240 have a good appearance, so as to complete the fabrication of the wafer contact window 230, the bonding pad opening 232, and the transmission hole 234 of the film carrier of the present invention. As for the subsequent process after the wafer contact window, the bonding pad opening and the driving hole of the flexible sheet carrier of the present invention are completed, the following steps are further included. FIG. 2F is a schematic structural diagram of the soft-chip carrier of FIG. 2E with a metal protective layer formed on the patterned metal layer. Please refer to FIG. 2F. Next, for example, a metal protection layer 260 is formed on the pattern of the metal layer 240 by a plating process, so as to prevent the exposed metal layer 240 from contacting the outside air and oxidizing. The material is, for example, tin. FIG. 2G is a schematic structural diagram of the soft sheet carrier of FIG. 2F with a solder mask formed on a part of the metal protective layer. Please refer to FIG. 2G, and then, for example, a solder mask layer 270 is formed on a portion of the metal protective layer 260 by a plating process. FIG. 2H illustrates the structure of the soft sheet carrier of FIG. 2G, the metal protective layer of which is formed on the metal protective layer not covered by the solder mask layer 11 1246171 13747twf.doc / m ΐ i ^ Please / 12H 'Next, use, for example, —Electric money is formed by two spears—Metal protective layer 28 is on the unwelded protective layer, of which metal protective layer 280 is: tin and the like. After that, a final product inspection step is performed to confirm that the pattern appearance of the / finding film 210 and the metal layer 24 is good.
圖3矣會示為本發明較佳實施狀一種軟片式承 态，，、具有多個成孔記號於薄膜上的示往 ^圖日 3,值得注意的是，本發明之另—軟片式; 戟杰之曰曰片接觸窗口及接合墊開口與傳動孔製程， ，可以在提供薄膜210之後，再於薄膜210上形成 夕個成孔記號212。接著，請參照圖2B，藉由雷射 貫穿這些成孔記號212、薄膜210及黏著層22〇田而 形成這些開口 230、232及234，至於其他步驟則盥 圖20、2〇、冗、2卜2(}及211所代表之步驟相同， 故在此便不再贅述。此外，本實施例軟片式承載哭 之晶片接觸窗口及接合墊開口與傳動孔製程亦可二 一雷射而圍繞著這些成孔記號212之周圍而於薄膜 210上燒灼出這些開口 23〇、232及234，亦包含在 本發明之保護的範圍内。 3 值得注意的是，上述之雷射於薄膜21〇上烤灼 出多個開口 230、232及234的步驟（如圖2B所示°)， 未必要在提供薄膜210 (如圖2A所示）之後執行， 亦I以在圖2C、2E、2F、2G或2H的步驟之II才 進行’亦包含在本發明之保護的範圍内。此外，本 發明之軟片式承載器未必要藉由黏著層22〇才可將 12 1246171 13747twf.doc/m 至屬層240接合於薄膜2 1 〇上。 器之晶片接觸窗口及= = 雷射成孔方法將以—雷射傳動孔製程及其 動孔234,而毋須製作多種不 柊 2舁傳 大幅地減少製作這些不同規格之以=成=可 進而有效地節省製作軟片式承载哭：曰片 综上所述，由於本 由///Γ與傳動孔及其雷射成孔方： :、接合墊開口與傳動孔，故可符合少量、出多=固 〒性地製作軟片式承載器的需求，並可大幅地r ,,、 習:口製作軟片式承載器之晶片接觸窗：人 口與傳動孔所需之模具的成本。 0墊開 雖然本發明已以較佳實施例揭露如上，然1 =艮定本發明，任何熟習此技藝者，在不 當可作些許之更動與潤飾，因此本發= 4耗圍§視後狀申請專·騎界定者為準。 ” 【圖式簡單說明】 晶月U 1F緣不為習知之一種軟片式承载器之 曰曰接觸自口及接合墊開口與傳動孔製程。 圖2A〜2E繪示為本發明較佳實施例之一種軟 13 1246171 13747twf.doc/m 與傳動孔 其金屬保 片式承載器之晶片接觸窗σ 製程。 及接合墊開1 圖邛繪示為圖2Ε之軟片式 濩層形成於圖案化之金屬層的社 圖2G繪示為圖2F之軟7不^、圖 ς ,Η 片式承载器，其銲罩芦 示意圖 圖2 Η繪不為圖2 G之教y斗、$私σΕ7 心孕人月式承載器，苴全眉 多士；你土从扣变口《 # ^ ^ ^ 構示意圖 圖3繪示為本發明較佳實施例之一種軟片式承 ，器，其具有多個成孔記號於薄膜上的示意圖。 【主要元件符號說明】 solder mask)形成於部分 ，、干卓層 意圖。 <孟屬保濩層上的結構 伴緣示為® 2G之軟片式承載器，其金屬 被銲罩層覆蓋之金屬保護層上的結 110 ••薄膜 120 黏著層 130 接觸窗口 132 接合墊開口 134 傳動孔 140 金屬層 142 接合塾 150 軟性膠材 160 金屬保護層 210 薄膜 212 成孔記號 220 黏著層 14 1246171 13747twf.doc/m 230 :晶片接觸窗口 232 :接合墊開口 234 :傳動孔 240 :金屬層 242 :接合墊 244 :引腳 250 :軟性膠材 260 :金屬保護層 270 :銲罩層 280 :金屬保護層 15Figure 3 矣 will show a preferred embodiment of the present invention is a soft sheet bearing state, and has a plurality of hole formation marks on the film shown ^ Figure 3, it is worth noting that the present invention is another-soft sheet type; The manufacturing process of the film contact window, the bonding pad opening, and the transmission hole can be performed after forming the film 210, and then forming a hole-forming mark 212 on the film 210. Next, referring to FIG. 2B, the openings 230, 232, and 234 are formed by laser penetrating the hole-forming marks 212, the film 210, and the adhesive layer 220. For other steps, FIG. 20, 20, and 2 The steps represented by Bu 2 () and 211 are the same, so they will not be repeated here. In addition, the wafer contact window, bonding pad opening, and transmission hole manufacturing process of the film-type wafer can also be surrounded by lasers. The openings 23o, 232, and 234 are burned out on the film 210 around these hole-forming marks 212, which are also included in the protection scope of the present invention. 3 It is worth noting that the above laser is baked on the film 21o The steps of burning out the multiple openings 230, 232, and 234 (as shown in FIG. 2B) need not be performed after the film 210 is provided (as shown in FIG. 2A), and the steps are as shown in FIG. 2C, 2E, 2F, 2G, or It is also included in the protection scope of the present invention that the II of step 2H is performed. In addition, the film carrier of the present invention does not need to pass 12 1246171 13747twf.doc / m to the dependent layer 240 through the adhesive layer 22. Bonded to the film 2 1 〇. The wafer contact window of the device and = = laser The hole method will be based on the laser transmission hole process and its moving hole 234, without the need to make a variety of transmissions, which will greatly reduce the production of these different specifications. = 成 =, which can effectively save the production of flexible film-type bearing cry: To sum up, because the hole is formed by /// Γ and the transmission hole and its laser::, the opening of the bonding pad and the transmission hole, it can meet the requirements of a small amount, a large amount = solid to make a flexible sheet carrier. Demand, and can greatly increase the cost of the die contact window for making a wafer carrier: the cost of the mold required for the population and the driving hole. 0 Although the present invention has been disclosed above in a preferred embodiment, 1 = Defining the present invention, anyone who is familiar with this skill can make some changes and retouching if it is inappropriate, so this hair = 4 Consumption § It is subject to the definition of the application and riding definition. "[Simplified illustration of the drawing] Crystal The month U 1F is not a conventional process for making a soft sheet carrier, such as a contact self-port and a joint pad opening and a transmission hole process. Figures 2A to 2E show a soft 13 1246171 13747twf.doc / m and the transmission hole of the metal chip holder carrier wafer The process of touching the window σ and the opening of the bonding pad 1 Figure 2 shows the soft sheet type of FIG. 2E. The layer is formed on the patterned metal layer. Figure 2G shows the soft sheet of FIG. 2F. Schematic diagram of the carrier, its welding cover. Figure 2 is not shown in Figure 2. G is a y-do, $ private σΕ7 heart-pregnant moon-type carrier, and full eyebrow toast; you will change from buckle to mouth. # ^ ^ ^ Schematic diagram FIG. 3 is a schematic diagram of a film-type bearing device with a plurality of hole-forming marks on a film according to a preferred embodiment of the present invention. [Explanation of Symbols of Main Components] The solder mask is formed on the part, and is dry. Layer intent. < The structural companion on the Meng Bao Bao layer is shown as ® 2G soft sheet carrier, whose metal is covered by the solder mask layer on the metal protective layer 110 •• film 120 adhesive layer 130 contact window 132 bond pad opening 134 Drive hole 140 Metal layer 142 Bonding pad 150 Soft rubber material 160 Metal protective layer 210 Film 212 Hole formation mark 220 Adhesive layer 14 1246171 13747twf.doc / m 230: Wafer contact window 232: Bond pad opening 234: Drive hole 240: Metal Layer 242: Bonding pad 244: Pin 250: Flexible rubber 260: Metal protective layer 270: Solder mask layer 280: Metal protective layer 15