1246950 九、發明說明： 【發明所屬之技術領域】 本發明是有關於— 程， 一種承載器之定位孔及其貫孔製1246950 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a process, a positioning hole of a carrier and a through hole system thereof
【先前技術】[Prior Art]
的應用領顺料廣。為了使結魏弱的碰電路裸晶片 (die)月匕文到有效的保護’並同時使積體電路裸晶片能與外 界相互傳遞訊號，才發展出晶片封裝(package)技術。目前 =經研發出的晶片封裝技術眾多，以晶片接合技術來說， 苇見的曰曰片接合技術為打線(Wire B〇nding，W/B)、覆晶 (Fhp Chlp，F/C)、捲帶式自動接合(Tape Aut〇matic如通叩， TAB)及晶片與軟片接合(〇1屮〇11朽11^，〔〇巧等，其中晶片 與軟片接合技術係直接將晶片接合於一軟片式承載器上， 而封衣元成後的封裝體不但體積小、重量輕，且由於軟片 式承載為本身具有可折彎(Flexible)的特性，故可使得封裝 體在後續組裝上更具;有彈性。 、圖1A〜1H繪示為習知之一種晶片與軟片接合之軟片 式承載器的定位孔製程。請參照圖1A，首先，先提供一薄 膜11〇與一金屬層130,其中金屬層13〇係形成於薄膜11〇 上。請參照圖1B，之後，使用一沖壓模具(未繪示)對薄膜 110進行衝孔(punch)，而產生多個傳動孔1仙。薄膜 1246950 > 13746twf.doc/y 及金屬層130係藉由這些傳動孔i4〇而配置於一輸送帶（未 繪示）上，並藉由此輸送帶而帶動薄膜11()及^屬如 前進。然後，再對金屬層130之表面132進行二化^研磨 (chemical polish)製程。 請參照圖1C，接著，於金屬層130之表面132上形 成一光阻層150。請參照圖1D，之後’於光阻層15〇上配 置一罩幕10 ,其中此罩幕1 〇具有多個開口 12，然後，藉 由一光線通過此罩幕10之多個開口 12，而對光'阻層15曰〇 進行曝光(exposure)，並移除罩幕1〇。請參照圖1e，A著， 對光阻層150進行顯影(devel〇pment)，使得光阻層15〇呈 現出-圖案。請參照圖1F ’之後’經由蝕刻(etch;ng)而移 除未被光阻層150之圖案所覆蓋之金屬層13〇。請參照圖 1G，然後，移除光阻層15〇。請參照圖1H，接著，使用'另 一沖壓模具(未繪示)對薄膜110與金屬層130進行衝孔而 產生多個定位孔142，即完成習知晶片與軟片接合之軟片 式承載器的定位孔的製作。 值得注意的是，每一批軟片式承載器，必須針對不同 晶片之接點位置（皆擔示）而設計出對應的定位孔⑷ 位置，而這些定位孔:142係利用沖壓模具對薄膜11〇及金 屬層130進订衝孔而形成。因此，對於不同晶片之接點位 置設計’則必須特別訂做並使用不同規格的沖壓模且，铁 而，製，具所需耗費的時間、成本卻相當地高，:此丁 在生產少里多樣之軟片式承載器時，將明顯大幅地增加了 車人片式承載為之定位孔的製造成本。 1246950 1 13746twf.doc/y 【發明内容】 有鑑於此’本發日狀目的就是在提供—種 接"之軟片式承載器的定位孔及其雷射貫孔！人片 少量多樣之軟収承載科，可有效 =| f 之定位孔的製造成本。 式承载裔 為達本發明之上述目的，本發明提出—種 ，合之軟片式承載器的定位孔製程。錢，提供盗 ^屬層，/其中金屬層係配置於薄膜上。接著，圖案化i 屬二，以形成一具有多個定位記號之圖案於金屬層^，豆 :k些疋位§己號係與金屬層形成一圖案化線路層時同時形 成。之後，藉由一雷射而形成多個定位孔於薄膜上，以完 成本發明之晶片與軟片接合之軟片式承載器的定位 作。 ^ 依照本發明的較佳實施例所述之晶片與軟片接合之 幸人片式承載器的定位孔製程，其中這些定位記號係與金屬 1被圖案化時同時形成。當這些定位記號例如為空心孔 時’定位孔係藉由低能量的雷射貫穿薄膜且貫穿空心之這 二疋位§己號所形成的。此外，當這些定位記號例如為實心 點時，定位孔係藉由/高能量雷射同時貫穿薄膜以及實心之 這些定位記號所形成的。 依照本發明的較佳實施例所述之晶片與軟片接合之 軟片式承載器的定位孔製程，其中將金屬層配置於薄膜上 之方法包括一濺鍍製程、一壓合製程或一塗佈製程。 依照本發明的較佳實施例所述之晶片與軟片接合之 1246950 • 13746twf.doc/y if益的定位孔製程’其中圖案化金屬層之步驟勺 i後，’將首先，形成—光阻層於金屬層的表ΐ二 ^曝:CD之一罩幕配置於光阻層上。然後， 位記號之圖案層呈現出此具有多個定 光阻層所覆蓋之全屬;ΐ::，經由侧而移除未被 化金屬層的製程層。取後，移除光阻層，以完成圖案 妒μ 發明的較佳實施例所述之晶片與軟片接人之 ^载器的定位孔製程，其中在形成光阻層:接= 括對孟屬層進行一表面處理，此表 ： (chemical p〇lish)。 匕3化學研磨 為達本發明之上述目的，本發明一 製程:適用於將一薄臈及/或一金屬層貫孔，而金二= ，於薄膜上’其巾金屬層具有多個定位記號 y而= 形成多個定位孔於薄^由田射並貝找些定位記號而 ，照本發明的較佳實施例所述之雷射貫孔製程， 疋位5己:虎包含空心的定位記號，其例如為鋼環 t定位孔储由較低能量之雷射而貫穿空心 ^， =膜而形成’或者是這些定位記號包含實心己己 Ϊ穿: = ，且這些定位孔係藉由較高能量之雷射 貝牙貝〜之廷些疋位記號與薄膜而形成。 基於上述，本發明之晶片與軟片接合之軟 的定位孔及其雷财孔製程關藉由雷射财^這些^ 1246950 . 13746twf.doc/y 成。因此’相較於習知軟片式承载器的 製作模具，並可二，式承載器的定位孔製程將毋須 位孔的-龙： 置、多樣地製作軟片式承載器之定 的成本:可有效地節省製作軟片式承載器之定位孔 的、特徵和優點能更明顯易懂， 並配合所附圖式，作詳細說明如 為讓本發明之上述目 下文特舉一較佳實施例， 下： 【實施方式】 【第一實施例] 圖2A〜2H繪示為本發明第一實施例之一種晶片與軟 片接合之軟片式承載器的定位孔製程。請參照圖2八，首 先，先&供一薄膜210及一金屬層230，其中金屬層23〇 係形成於薄膜210上，而薄膜210的材質例如為聚乙醯胺 (polyimide)，且金屬層23〇的材質例如為銅箔或其他金屬 等，而將金屬層230形成於薄膜210上的方法包括例如一 濺鑛(sputtering)、壓合(iaminate)及塗佈(casting)等製程，而 此種一薄膜210與一金屬層23〇接合之軟片式承載器係為 兩層板的型式；若是金屬層230係藉由一黏著層（未繪示） 而壓合(Laminate)於薄膜210上時，則此種一薄膜21〇、一 黏著層與一金屬層230接合之軟片式承載器係為三層板的 型式。請參照圖2B，之後，例如使用一沖壓模具(未繪示) 對薄膜210進行衝孔(Punch)而產生多個傳動孔240，其中 薄膜210及金屬層230係藉由這些傳動孔240而配置於一 1246950 ， 13746twf.doc/y 輸送帶（未綠示）上，並藉由此輸送帶而帶動薄膜210及 金屬層230前進。然後，再例如對金屬層23〇之表面 進行一表面處理步驟，其例如為一化學研磨（chemical polish)製程，以平坦化金屬層23〇之表面232等。 請參照圖2C，接著，例如於金屬層230之表面232 上形成一光阻層250。請參照圖2D，之後，例如於光阻層 250上配置一罩幕1〇，其中此罩幕1〇例如具有多個開口 12,然後，例如藉由一光線通過此罩幕1〇之多個開口 η， 而對光阻層250進行曝光㈣。接著，移除此罩幕 1〇。請參照圖2E，之後，例如對光阻層25〇進行顯影 (development)，使得光阻層25〇呈現出一圖案。請參照^ 2F，之後，例如經由一蝕刻（etchin幻製程而移除未被光阻 層250之圖案所覆蓋之金屬層23()，其中制完之金屬層 230的圖案例如包含—圖案化線路加與多敏心的定^ 記號234 ’其中此空心的定位記號234例如為銅環等。請 參照圖2G，然後，移除光阻層25〇。 請參照圖2Η’接著，例如使用一較低能量之雷射並 ^這些空心蚊位記#u 234而於薄膜加上燒灼出多個 ，位孔242。之U列如進行—成品檢測步驟，以確保金 f層23G之圖f卜觀良好，並無互相連接產生短路(Short) ，斷裂喊象等，以完成本發明之晶片與軟片接合之軟片 式承載咨的定位孔242的製作。The application has a wide range of applications. In order to make the weak die of the circuit die to effective protection, and at the same time enable the integrated circuit bare chip to transmit signals to and from the outside, the chip packaging technology is developed. At present, there are many chip packaging technologies developed. In the case of wafer bonding technology, the splicing technology of the wafer bonding is Wire B〇nding (W/B), Flip Chip (Fhp Chlp, F/C). Tape and reel type automatic bonding (Tape Aut〇matic such as Wanton, TAB) and wafer-to-film bonding (〇1屮〇11朽11^, [〇巧等, where wafer and film bonding technology directly bonds the wafer to a film On the carrier, the package after the sealing is not only small in size, light in weight, but also has a flexible characteristic in the film carrier, so that the package can be further assembled in the subsequent assembly; FIG. 1A to FIG. 1H illustrate a positioning hole process of a conventional wafer-and-film bonded film carrier. Referring to FIG. 1A, first, a film 11 and a metal layer 130 are provided, wherein the metal layer is provided. 13〇 is formed on the film 11〇. Referring to Fig. 1B, the film 110 is punched using a stamping die (not shown) to produce a plurality of drive holes. The film 1246950 > 13746twf .doc/y and metal layer 130 are configured by these transmission holes i4〇 On a conveyor belt (not shown), and by the conveyor belt, the film 11 () and the film are advanced. Then, the surface 132 of the metal layer 130 is subjected to a chemical polish process. Referring to FIG. 1C, a photoresist layer 150 is formed on the surface 132 of the metal layer 130. Referring to FIG. 1D, a mask 10 is disposed on the photoresist layer 15A, wherein the mask has a plurality of masks The opening 12 is then exposed to the light 'resist layer 15' by a light passing through the plurality of openings 12 of the mask 10, and the mask 1 is removed. Referring to Figure 1e, The photoresist layer 150 is developed (devel 〇pment) such that the photoresist layer 15 〇 exhibits a pattern. Please refer to FIG. 1F 'after' to remove the pattern of the photoresist layer 150 without etching (etch; ng) The metal layer 13 is covered. Please refer to FIG. 1G, and then the photoresist layer 15 is removed. Referring to FIG. 1H, the film 110 and the metal layer 130 are then etched using another stamping die (not shown). The holes are formed to form a plurality of positioning holes 142, that is, the fabrication of the positioning holes of the wafer carrier in which the conventional wafer and the film are bonded. It should be noted that each batch of the film carrier must design corresponding positioning holes (4) for the contact positions of the different wafers (both of which are shown), and these positioning holes: 142 are used to punch the film 11 by using a stamping die. And the metal layer 130 is formed by punching holes. Therefore, the design of the joint position for different wafers must be specially made and used with different specifications of the stamping die, and the iron, the system has the time and cost required. It is quite high: this kind of Ding will significantly increase the manufacturing cost of the positioning hole for the driver's chip bearing when producing a variety of flexible film carriers. 1246950 1 13746twf.doc/y [Summary of the Invention] In view of the fact that the purpose of this is to provide the positioning hole of the film carrier and its laser through hole! A small number of soft-receiving load-bearing sections can effectively reduce the manufacturing cost of the positioning hole of =| f. In order to achieve the above object of the present invention, the present invention proposes a positioning hole process for a flexible disk carrier. Money, providing a thief layer, / where the metal layer is placed on the film. Next, the pattern i is two, to form a pattern having a plurality of positioning marks on the metal layer, and the beans are formed simultaneously with the metal layer to form a patterned circuit layer. Thereafter, a plurality of positioning holes are formed on the film by a laser to complete the positioning of the wafer-bonded film carrier of the invention. The locating hole process of the wafer carrier bonded to the wafer according to the preferred embodiment of the present invention, wherein the alignment marks are formed simultaneously with the metal 1 being patterned. When these positioning marks are, for example, hollow holes, the positioning holes are formed by a low-energy laser penetrating the film and penetrating through the hollow. Further, when the positioning marks are, for example, solid dots, the positioning holes are formed by the /high-energy laser simultaneously passing through the film and the solid positioning marks. According to a preferred embodiment of the preferred embodiment of the present invention, a locating hole process for a wafer-bonded flexible wafer carrier, wherein the method of disposing a metal layer on the film comprises a sputtering process, a pressing process or a coating process . According to the preferred embodiment of the present invention, the wafer and the film are bonded to the 1246950 • 13746 twf.doc/y if the locating hole process 'after the step of patterning the metal layer, i will be formed first—the photoresist layer The surface of the metal layer is exposed: a mask of CD is disposed on the photoresist layer. Then, the pattern layer of the bit mark exhibits the entire genus covered by the plurality of fixed photoresist layers; ΐ::, the process layer of the un-metallized layer is removed via the side. After the removal, the photoresist layer is removed to complete the positioning hole process of the wafer and the film receiving device of the preferred embodiment of the invention, wherein the photoresist layer is formed: The layer is subjected to a surface treatment, this table: (chemical p〇lish).匕3 chemical grinding to achieve the above object of the present invention, a process of the present invention: suitable for a thin crucible and / or a metal layer through the hole, and gold two =, on the film 'the metal layer of the towel has a plurality of positioning marks Y and = forming a plurality of positioning holes in the thin film by the field and looking for some positioning marks, according to a preferred embodiment of the present invention, the laser through hole process, the position 5: the tiger contains hollow positioning marks, For example, the steel ring t locating holes are stored by a lower energy laser through the hollow ^, = film to form 'or these positioning marks contain solid Ϊ Ϊ : : , and these positioning holes are by higher energy The laser is formed by the markings of the beak and the film. Based on the above, the soft positioning holes of the wafer and the film bonded to the film of the present invention and the process of the thunder hole are formed by the lasers, which are 12146690.13746twf.doc/y. Therefore, compared with the conventional mold carrier, the positioning hole process of the second type carrier can be used to set the cost of the flexible carrier. The features, advantages and advantages of the locating hole for the production of the film carrier can be more clearly understood and described in detail with reference to the accompanying drawings. [Embodiment] FIG. 2A to FIG. 2H are diagrams showing a process of locating a hole of a wafer-bonded film carrier according to a first embodiment of the present invention. Referring to FIG. 2, first, a film 210 and a metal layer 230 are formed, wherein a metal layer 23 is formed on the film 210, and the material of the film 210 is, for example, polyimide, and metal. The material of the layer 23 is, for example, copper foil or other metal, and the method of forming the metal layer 230 on the film 210 includes, for example, a sputtering, iaminate, and casting process. The film carrier of the film 210 and the metal layer 23 is a two-layer plate; if the metal layer 230 is laminated to the film 210 by an adhesive layer (not shown) In this case, the film carrier of the film 21, an adhesive layer and a metal layer 230 is a three-layer board. Referring to FIG. 2B, a plurality of transmission holes 240 are formed by punching the film 210, for example, using a stamping die (not shown). The film 210 and the metal layer 230 are configured by the transmission holes 240. On a conveyor belt (not shown in green) on a 1246950, 13746 twf.doc/y, the film 210 and the metal layer 230 are advanced by the conveyor belt. Then, for example, a surface treatment step is performed on the surface of the metal layer 23, which is, for example, a chemical polish process to planarize the surface 232 of the metal layer 23 and the like. Referring to FIG. 2C, a photoresist layer 250 is formed on the surface 232 of the metal layer 230, for example. Referring to FIG. 2D, afterwards, for example, a mask 1 is disposed on the photoresist layer 250, wherein the mask 1 has, for example, a plurality of openings 12, and then, for example, by a light passing through the mask 1 The opening η is exposed to the photoresist layer 250 (four). Next, remove this mask 1〇. Referring to FIG. 2E, for example, the photoresist layer 25 is developed to cause the photoresist layer 25 to exhibit a pattern. Please refer to ^2F, after which the metal layer 23 (not covered by the pattern of the photoresist layer 250 is removed, for example, via an etch process), wherein the pattern of the finished metal layer 230 includes, for example, a patterned circuit. Adding a multi-sensitive symmetry mark 234', wherein the hollow positioning mark 234 is, for example, a copper ring or the like. Please refer to FIG. 2G, and then the photoresist layer 25 is removed. Please refer to FIG. 2 Η 'Next, for example, using a comparison Low-energy laser and ^ these hollow mosquitoes record #u 234 and burn a plurality of holes in the film, bit holes 242. The U column is carried out - the finished product detection step to ensure that the gold f layer 23G map f Good, no short connection, short break, etc., to complete the fabrication of the wafer-and-film bonded locating holes 242 of the present invention.
圖21繪示為圖2H 層之圖案上的結構示 ^軟片式承載器，其錫層覆蓋於金 思圖。請參照圖21，然後，例如使 10 1246950 * 13746twf.doc/y 用一電鍍(plating)製程而將一錫層260覆蓋於金屬層230 之圖案上。圖2J緣示為圖21之軟片式承載器，其銲罩層 形成於部分之錫層上的結構示意圖。請參照圖2J，再者， 例如使用一印刷(printing)製程而將一銲罩層27〇形成於部 分之錫層260上。圖2K緣示為圖2J之軟片式承載器，其 另一錫層形成於未被銲罩層覆蓋之錫層上的結構示意圖。 請參照圖2K，接著，例如使用一電鍍(piating)製程而將另 一錫層280形成於未被銲罩層27〇覆蓋之錫層26〇上。最 後，例如進行一成品檢測步驟，以確保錫層26〇、28〇及銲 罩層270之外觀形成良好，而完成本發明之兩層軟片式承 載器的^作（僅包括薄膜210與金屬層230時），以適於 進行後續之將晶片配置於軟片（chip Qn Film，⑺f)上的製 程:當然’若是本發明之軟片式承載器係包括薄膜210、 ㈣軟片式承載器。 周圍而共同於金屬層心观位記號234之 孔，亦包含在本發明之保^膜210上燒灼出多個定位 量之雷射的原因乃是:因為=彡要== 燒灼出多個定位孔。 只赘貝牙至屬層230而 步驟，未必要在圖2C〜=射&灼出多個定位孔242白 之後執行，亦可以在圖^之圖案化金屬層230的步馬 j246950 13746twf.doc/y 定位^卜^：習知晶片與軟片接合之軟片式承載器的 可相同衣二t母一軟片式承载器之傳動孔240位置皆 孔制^僅在制H 片與軟片接合之軟片式承載11的定位 孔衣純在料傳減時需製作 可。但是，值得注意的是，由於定位孔242 之晶片的接點位置（皆未繪示)而改二^ 發明之軟減製程㈣ = 性地於金屬層230 ^¾瞄om L咕 田对衣私就可辦 而…I: 上燒灼出多個定位孔242， #财同規格之模具，故可有效地f省製作多 格之模具所需的時間與成本，並可符合少 省1心m、式承載器之定位孔242的需求，以有效地節 $ 1作軟片式承載器之定位孔242的成本。 【第二實施例】 片接示為本發明第"實施例之—種晶片與軟 之Ιλ片絲載㈣定位孔㈣分製程，狀位記號 為貫心之剖面示意圖。請參照圖3Α，此外，相較於第一每 施例之定位孔製程，其形成之空心蚊位記號234，本^ 施例之軟片式承㈣的定位孔製程，在移除其光阻層之 ，，在金屬層上330:例如製作出包含金屬層33〇之實心的 疋4 334其中此貫心的定位記號幻4例如為銅墊等。 普作=苓！!、圖3B，接著，例如使用一較高能量之雷射並 貝牙坆些貫心的定位記號334而於金屬層33〇及薄膜 上燒灼出多個定位孔342。至於本實施例之製程的其他步 驟則與上述之第_實施例相同，在此便不再資述，只是其 12 1246950 13746twf.doc/y 罩幕之開口數目小於第一 目，故餘刻完金屬層33〇也列之罩幕10的開〇 12數 332等。 僅顯現出例如一圖案化線路 當然，本實施例之教 能量之雷射而圍繞著這此1式承载器的製程亦可以 金屬層330及薄膜31〇的定位記號334之周圍而於 在本發明之保護的範圍内Γ灼出多個定位孔342，亦包含 因此’相較於習知晶 定位孔製程，本發明晶片心软片接合之軟片式承載器的 位孔製程將以-雷射軟片式承載器的定 310上燒灼出多個心無性地於金屬層330、薄膜 训上⑽出夕個疋位孔34 多 模具，以有效地節省製作敕,作夕種不同規格之 本。 衣作軟片式承载器之定位孔342的成 综上所述，由於本發明之晶片與軟片接合 載，定位孔及其雷射貫孔製程因H二 於金屬層或薄膜上燒灼出多個定位孔。因此田:二可 軟片式承載器的製程’本發需製作同—位夂^ 動孔的模具，而毋須製作其他符合不同位置雜之 少量、多樣地、彈性地製物式承。 ^^ 以有效地節省製作軟片式承載器之定: 雖然本發明已以—較佳實關揭露如上，狹 以限，定本發明，任何熟習此技藝者，在不脫離:發明 神和範_ ’當可作些許之更動錢_，因此本發明之$ 13 1246950 13746twf.doc/y 護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡单說明】 圖1A〜1H繪示為習知之一種晶片與軟片接合之軟片 式承載器的定位孔製程。 圖2A〜2H繪示為本發明第一實施例之一種晶片與軟 片接合之軟片式承載器的定位孔製程。 圖21繪示為圖2H之軟片式承載器，其錫層覆蓋於金 屬層之圖案上的結構示意圖。 圖2J繪示為圖21之軟片式承載器，其銲罩層形成於 部分之錫層上的結構不意圖。 圖2K繪示為圖2J之軟片式承載器，其另一錫層形成 於未被銲罩層覆蓋之錫層上的結構示意圖。 圖3A〜3B繪示為本發明第二實施例之一種晶片與軟 片接合之軟片式承載器的定位孔的部分製程。 【主要元件符號說明】 10、20 ··罩幕 12、22 :開口 110 :薄膜 130 :金屬層 / 132 ··表面 140 :傳動孔 142 :定位孔 150 ·•光阻 210、310 :薄膜 14 1246950 13746twf.doc/y 230、330 :金屬層 232、332 :圖案化線路 234、334 :定位記號 240 :傳動孔 242、342 :定位孔 250 :光阻 260、280 :錫層 270 :銲罩層Figure 21 is a diagram showing the structure of the pattern of the layer of Figure 2H. The film carrier is covered with a tin layer. Referring to FIG. 21, a tin layer 260 is then overlaid on the pattern of the metal layer 230 by, for example, 10 1246950 * 13746 twf.doc/y using a plating process. Fig. 2J is a schematic view showing the structure of the film carrier of Fig. 21, in which the solder mask layer is formed on a portion of the tin layer. Referring to Fig. 2J, a solder mask layer 27 is formed on a portion of the tin layer 260, for example, using a printing process. Fig. 2K is a schematic view showing the structure of the film carrier of Fig. 2J with another tin layer formed on the tin layer not covered by the solder mask layer. Referring to Fig. 2K, another tin layer 280 is formed on the tin layer 26 which is not covered by the solder mask layer 27, for example, using a piating process. Finally, for example, a finished product inspection step is performed to ensure that the appearance of the tin layers 26, 28, and the solder mask layer 270 is well formed, and the two-layer film carrier of the present invention is completed (including only the film 210 and the metal layer). At 230 o'clock, a process suitable for subsequent wafer placement on a chip (chip Qn Film, (7) f) is used: of course, if the film carrier of the present invention comprises a film 210, (4) a film carrier. The reason for the surrounding and common holes of the metal layer of the heart mark 234, which also includes the laser for burning a plurality of positioning amounts on the film 210 of the present invention is: because ===== Burning out multiple positions hole. The step of only the shellfish to the layer 230 is not necessary to be performed after the plurality of positioning holes 242 are burned in FIG. 2C==shooting/amplifying, and the patterning metal layer 230 can also be patterned in the step j246950 13746twf.doc /y Positioning ^ Bu: The conventional film-and-film-bonded film carrier can be the same. The position of the drive hole 240 of the two-female-chip carrier is made of holes. Only the film of the H piece and the film is bonded. The positioning hole of the bearing 11 needs to be made purely when the material is transferred. However, it is worth noting that due to the contact position of the wafer of the positioning hole 242 (none of which is shown), the softening process of the invention is changed (4) = sexually in the metal layer 230 ^ 3⁄4 aiming om L 咕田It can be done...I: It burns a plurality of positioning holes 242, #财同规格的模具, so it can effectively save the time and cost required to make multi-grid molds, and can meet less than one heart, The positioning hole 242 of the carrier is required to effectively cost the aligning hole 1/2 as the positioning hole 242 of the film carrier. [Second Embodiment] The chip is shown in the first embodiment of the present invention as a cross-sectional process of a wafer and a soft Ι Ι 载 载 (4) locating hole (four), and the shape mark is a cross-sectional view of the center. Referring to FIG. 3A, in addition, compared with the positioning hole process of the first embodiment, the hollow mosquito mark 234 is formed, and the positioning hole process of the flexible film bearing (4) of the present embodiment removes the photoresist layer. On the metal layer 330, for example, a solid 疋4 334 including a metal layer 33〇 is formed, wherein the positioning mark 4 of the center of the heart is, for example, a copper pad or the like. General work = 苓! 3B, next, a plurality of locating holes 342 are cauterized on the metal layer 33 and the film, for example, using a higher energy laser and a peripherally located positioning mark 334. The other steps of the process of the present embodiment are the same as those of the above-mentioned embodiment, and will not be described here, except that the number of openings of the 12 1246950 13746 twf.doc/y mask is smaller than the first item, so the rest is completed. The metal layer 33 is also provided with the opening number 332 of the mask 10 and the like. For example, only a patterned circuit is shown. Of course, the laser of the teaching energy of the present embodiment surrounds the process of the type 1 carrier, and the surrounding of the metal layer 330 and the positioning mark 334 of the film 31 而 can be used in the present invention. Within the scope of protection, a plurality of positioning holes 342 are burned, and the hole hole process of the chip carrier bonded by the wafer core film of the present invention will be the same as that of the conventional crystal positioning hole process. On the fixed 310, a plurality of hearts are asexually applied to the metal layer 330 and the film is trained (10), and a plurality of molds are formed in the position of the hole, so as to effectively save the production of the crucible, and the different specifications of the evening. As described above, the locating hole 342 of the film-type carrier is integrated. Since the wafer and the film of the present invention are bonded, the locating hole and the laser through-hole process are burned by the H layer on the metal layer or the film. hole. Therefore, the process of the field: the two-piece flexible sheet carrier is required to make the mold of the same position and the movable hole, and it is not necessary to make other small-sized, diverse and elastic-shaped articles that conform to different positions. ^^ In order to effectively save the production of the film carrier: Although the present invention has been disclosed as a preferred embodiment, the invention is not limited to: the invention of the god and the fan A little more money may be made, and therefore the scope of the invention is defined by the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A to 1H illustrate a positioning hole process of a conventional wafer-to-film bonded film carrier. 2A to 2H illustrate a process of locating a hole of a wafer-to-film bonded film carrier according to a first embodiment of the present invention. Figure 21 is a schematic view showing the structure of the film carrier of Figure 2H with the tin layer overlying the pattern of the metal layer. Fig. 2J is a view showing the structure of the film carrier of Fig. 21, in which the solder mask layer is formed on a portion of the tin layer. 2K is a schematic view showing the structure of the film carrier of FIG. 2J with another tin layer formed on the tin layer not covered by the solder mask layer. 3A-3B illustrate a partial process of positioning holes of a wafer-to-film bonded film carrier according to a second embodiment of the present invention. [Main component symbol description] 10, 20 · · Mask 12, 22: Opening 110: Film 130: Metal layer / 132 · Surface 140: Transmission hole 142: Positioning hole 150 · Photo resist 210, 310: Film 14 1246950 13746twf.doc/y 230, 330: metal layers 232, 332: patterned lines 234, 334: positioning marks 240: drive holes 242, 342: positioning holes 250: photoresist 260, 280: tin layer 270: solder mask layer
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