TW201634729A - 金屬氮化碳膜或類金屬氮化碳膜之製造方法、金屬氮化碳膜或類金屬氮化碳膜、及金屬氮化碳膜或類金屬氮化碳膜之製造裝置 - Google Patents
金屬氮化碳膜或類金屬氮化碳膜之製造方法、金屬氮化碳膜或類金屬氮化碳膜、及金屬氮化碳膜或類金屬氮化碳膜之製造裝置 Download PDFInfo
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- TW201634729A TW201634729A TW105100983A TW105100983A TW201634729A TW 201634729 A TW201634729 A TW 201634729A TW 105100983 A TW105100983 A TW 105100983A TW 105100983 A TW105100983 A TW 105100983A TW 201634729 A TW201634729 A TW 201634729A
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- Taiwan
- Prior art keywords
- metal
- carbonitride film
- film
- metal carbonitride
- source
- Prior art date
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- 239000002184 metal Substances 0.000 title claims abstract description 105
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims abstract description 23
- 229910052752 metalloid Inorganic materials 0.000 title claims abstract description 21
- 150000002738 metalloids Chemical class 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 26
- -1 1,2,4-triazole compound Chemical class 0.000 claims abstract description 22
- 125000006165 cyclic alkyl group Chemical group 0.000 claims abstract description 12
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 23
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910001507 metal halide Inorganic materials 0.000 claims description 5
- 150000005309 metal halides Chemical class 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical class N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 claims description 3
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 150000002170 ethers Chemical class 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 125000004665 trialkylsilyl group Chemical group 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 230000008016 vaporization Effects 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 4
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- DAMJCWMGELCIMI-UHFFFAOYSA-N benzyl n-(2-oxopyrrolidin-3-yl)carbamate Chemical compound C=1C=CC=CC=1COC(=O)NC1CCNC1=O DAMJCWMGELCIMI-UHFFFAOYSA-N 0.000 description 3
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- ODNBVEIAQAZNNM-UHFFFAOYSA-N 1-(6-chloroimidazo[1,2-b]pyridazin-3-yl)ethanone Chemical compound C1=CC(Cl)=NN2C(C(=O)C)=CN=C21 ODNBVEIAQAZNNM-UHFFFAOYSA-N 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- 238000005160 1H NMR spectroscopy Methods 0.000 description 2
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 2
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 2
- GUNJVIDCYZYFGV-UHFFFAOYSA-K Antimony trifluoride Inorganic materials F[Sb](F)F GUNJVIDCYZYFGV-UHFFFAOYSA-K 0.000 description 2
- RHMXXKKWQFXVDM-UHFFFAOYSA-J Br[Sb](Br)(Br)Br Chemical compound Br[Sb](Br)(Br)Br RHMXXKKWQFXVDM-UHFFFAOYSA-J 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- WZFIJJJUPLZZOG-UHFFFAOYSA-J [Sb](I)(I)(I)I Chemical compound [Sb](I)(I)(I)I WZFIJJJUPLZZOG-UHFFFAOYSA-J 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- RPJGYLSSECYURW-UHFFFAOYSA-K antimony(3+);tribromide Chemical compound Br[Sb](Br)Br RPJGYLSSECYURW-UHFFFAOYSA-K 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 239000012295 chemical reaction liquid Substances 0.000 description 2
- QTMDXZNDVAMKGV-UHFFFAOYSA-L copper(II) bromide Substances [Cu+2].[Br-].[Br-] QTMDXZNDVAMKGV-UHFFFAOYSA-L 0.000 description 2
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 2
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 2
- HZHUAESPXGNNFV-UHFFFAOYSA-N diethyl(methyl)phosphane Chemical group CCP(C)CC HZHUAESPXGNNFV-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- HBBBDGWCSBWWKP-UHFFFAOYSA-J tetrachloroantimony Chemical compound Cl[Sb](Cl)(Cl)Cl HBBBDGWCSBWWKP-UHFFFAOYSA-J 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- VNDYJBBGRKZCSX-UHFFFAOYSA-L zinc bromide Chemical compound Br[Zn]Br VNDYJBBGRKZCSX-UHFFFAOYSA-L 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- KHPNGCXABLTQFJ-UHFFFAOYSA-N 1,1,1-trichlorodecane Chemical compound CCCCCCCCCC(Cl)(Cl)Cl KHPNGCXABLTQFJ-UHFFFAOYSA-N 0.000 description 1
- IXADHCVQNVXURI-UHFFFAOYSA-N 1,1-dichlorodecane Chemical compound CCCCCCCCCC(Cl)Cl IXADHCVQNVXURI-UHFFFAOYSA-N 0.000 description 1
- ZTEHOZMYMCEYRM-UHFFFAOYSA-N 1-chlorodecane Chemical compound CCCCCCCCCCCl ZTEHOZMYMCEYRM-UHFFFAOYSA-N 0.000 description 1
- SYOANZBNGDEJFH-UHFFFAOYSA-N 2,5-dihydro-1h-triazole Chemical compound C1NNN=C1 SYOANZBNGDEJFH-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910021582 Cobalt(II) fluoride Inorganic materials 0.000 description 1
- 229910021584 Cobalt(II) iodide Inorganic materials 0.000 description 1
- 229910021590 Copper(II) bromide Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910016859 Lanthanum iodide Inorganic materials 0.000 description 1
- 229910021380 Manganese Chloride Inorganic materials 0.000 description 1
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical compound Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 description 1
- 229910021585 Nickel(II) bromide Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 description 1
- QISGROBHHFQWKS-UHFFFAOYSA-N [C].[Nb] Chemical compound [C].[Nb] QISGROBHHFQWKS-UHFFFAOYSA-N 0.000 description 1
- GPWHDDKQSYOYBF-UHFFFAOYSA-N ac1l2u0q Chemical compound Br[Br-]Br GPWHDDKQSYOYBF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 description 1
- CECABOMBVQNBEC-UHFFFAOYSA-K aluminium iodide Chemical compound I[Al](I)I CECABOMBVQNBEC-UHFFFAOYSA-K 0.000 description 1
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 1
- 229940045100 antimony triiodide Drugs 0.000 description 1
- KWQLUUQBTAXYCB-UHFFFAOYSA-K antimony(3+);triiodide Chemical compound I[Sb](I)I KWQLUUQBTAXYCB-UHFFFAOYSA-K 0.000 description 1
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 1
- YMEKEHSRPZAOGO-UHFFFAOYSA-N boron triiodide Chemical compound IB(I)I YMEKEHSRPZAOGO-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 229950005499 carbon tetrachloride Drugs 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 1
- AVWLPUQJODERGA-UHFFFAOYSA-L cobalt(2+);diiodide Chemical compound [Co+2].[I-].[I-] AVWLPUQJODERGA-UHFFFAOYSA-L 0.000 description 1
- BZRRQSJJPUGBAA-UHFFFAOYSA-L cobalt(ii) bromide Chemical compound Br[Co]Br BZRRQSJJPUGBAA-UHFFFAOYSA-L 0.000 description 1
- YCYBZKSMUPTWEE-UHFFFAOYSA-L cobalt(ii) fluoride Chemical compound F[Co]F YCYBZKSMUPTWEE-UHFFFAOYSA-L 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- NKNDPYCGAZPOFS-UHFFFAOYSA-M copper(i) bromide Chemical compound Br[Cu] NKNDPYCGAZPOFS-UHFFFAOYSA-M 0.000 description 1
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- RJYMRRJVDRJMJW-UHFFFAOYSA-L dibromomanganese Chemical compound Br[Mn]Br RJYMRRJVDRJMJW-UHFFFAOYSA-L 0.000 description 1
- CTNMMTCXUUFYAP-UHFFFAOYSA-L difluoromanganese Chemical compound F[Mn]F CTNMMTCXUUFYAP-UHFFFAOYSA-L 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- WXXZSFJVAMRMPV-UHFFFAOYSA-K gallium(iii) fluoride Chemical compound F[Ga](F)F WXXZSFJVAMRMPV-UHFFFAOYSA-K 0.000 description 1
- DWRNSCDYNYYYHT-UHFFFAOYSA-K gallium(iii) iodide Chemical compound I[Ga](I)I DWRNSCDYNYYYHT-UHFFFAOYSA-K 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- KYKBXWMMXCGRBA-UHFFFAOYSA-K lanthanum(3+);triiodide Chemical compound I[La](I)I KYKBXWMMXCGRBA-UHFFFAOYSA-K 0.000 description 1
- 235000002867 manganese chloride Nutrition 0.000 description 1
- 239000011565 manganese chloride Substances 0.000 description 1
- QWYFOIJABGVEFP-UHFFFAOYSA-L manganese(ii) iodide Chemical compound [Mn+2].[I-].[I-] QWYFOIJABGVEFP-UHFFFAOYSA-L 0.000 description 1
- RLCOZMCCEKDUPY-UHFFFAOYSA-H molybdenum hexafluoride Chemical compound F[Mo](F)(F)(F)(F)F RLCOZMCCEKDUPY-UHFFFAOYSA-H 0.000 description 1
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 1
- BQBYSLAFGRVJME-UHFFFAOYSA-L molybdenum(2+);dichloride Chemical compound Cl[Mo]Cl BQBYSLAFGRVJME-UHFFFAOYSA-L 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- IPLJNQFXJUCRNH-UHFFFAOYSA-L nickel(2+);dibromide Chemical compound [Ni+2].[Br-].[Br-] IPLJNQFXJUCRNH-UHFFFAOYSA-L 0.000 description 1
- BFSQJYRFLQUZKX-UHFFFAOYSA-L nickel(ii) iodide Chemical compound I[Ni]I BFSQJYRFLQUZKX-UHFFFAOYSA-L 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- INIOZDBICVTGEO-UHFFFAOYSA-L palladium(ii) bromide Chemical compound Br[Pd]Br INIOZDBICVTGEO-UHFFFAOYSA-L 0.000 description 1
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 1
- KGRJUMGAEQQVFK-UHFFFAOYSA-L platinum(2+);dibromide Chemical compound Br[Pt]Br KGRJUMGAEQQVFK-UHFFFAOYSA-L 0.000 description 1
- ZXDJCKVQKCNWEI-UHFFFAOYSA-L platinum(2+);diiodide Chemical compound [I-].[I-].[Pt+2] ZXDJCKVQKCNWEI-UHFFFAOYSA-L 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
- FBEIPJNQGITEBL-UHFFFAOYSA-J tetrachloroplatinum Chemical compound Cl[Pt](Cl)(Cl)Cl FBEIPJNQGITEBL-UHFFFAOYSA-J 0.000 description 1
- IDYFACFOJYNFAX-UHFFFAOYSA-J tetrafluoroantimony Chemical compound F[Sb](F)(F)F IDYFACFOJYNFAX-UHFFFAOYSA-J 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 1
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
- OMQSJNWFFJOIMO-UHFFFAOYSA-J zirconium tetrafluoride Chemical compound F[Zr](F)(F)F OMQSJNWFFJOIMO-UHFFFAOYSA-J 0.000 description 1
- XLMQAUWIRARSJG-UHFFFAOYSA-J zirconium(iv) iodide Chemical compound [Zr+4].[I-].[I-].[I-].[I-] XLMQAUWIRARSJG-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
本發明提供一種能夠於低溫下製造金屬氮化碳膜或類金屬氮化碳膜之方法。
本發明係將N-三烷基矽烷基-1,2,3-三唑化合物及通式(1)所表示之1,2,4-三唑化合物之至少一者用作氮源而成膜金屬氮化碳膜或類金屬氮化碳膜。
□(式中，R可相同或者亦可不同，表示氫原子、碳原子數1~5之直鏈狀、支鏈狀、或環狀之烷基、或碳原子數1~5之三烷基矽烷基；再者，複數個R亦可相互鍵結而形成環)
Description
本發明係關於一種金屬氮化碳膜或類金屬氮化碳膜之製造方法、金屬氮化碳膜或類金屬氮化碳膜、及金屬氮化碳膜或類金屬氮化碳膜之製造裝置。
近年來，於半導體或電子零件等領域，針對具有較高之耐化學品性之「於金屬氮化膜或類金屬氮化膜中存在碳之氮化碳膜」進行了大量之研究、開發。作為金屬氮化碳膜或類金屬氮化碳膜之製造方法，例如已知有將氨氣等無機氮氣、與乙炔等烴氣組合而進行製造之方法(例如參照專利文獻1)、或將異丙基胺用作碳-氮供給源(碳氮化劑)之方法(例如參照專利文獻2)。
又，揭示有將胺基矽烷類(例如參照專利文獻3~5)用作用以製造矽氮化碳膜之碳氮化劑之方法。
專利文獻1：日本專利特開2007-189173號公報
專利文獻2：日本專利特開2009-283587號公報
專利文獻3：日本專利特開2014-177471號公報
專利文獻4：日本專利特開2010-267971號公報
專利文獻5：日本專利特開2010-43081號公報
然而，於使用無機氮氣及烴氣之方法中，存在需要另外設置供給各氣體之機構，又，於成膜時需要600℃以上之較高溫度等問題。
另一方面，於使用胺基矽烷類之方法中，存在為了於電漿環境下進行，而不能選擇無法承受電漿之基板之問題。
本發明之主要目的在於提供一種能夠於低溫下製造金屬氮化碳膜或類金屬氮化碳膜之方法。
於本發明之金屬氮化碳膜或類金屬氮化碳膜之製造方法中，將N-三烷基矽烷基-1,2,3-三唑化合物及通式(1)所表示之1,2,4-三唑化合物之至少一者用作氮源，而成膜金屬氮化碳膜或類金屬氮化碳膜。
(式中，R可相同或者亦可不同，表示氫原子、碳原子數1~5之直鏈狀、支鏈狀、或環狀之烷基、或碳原子數1~5之三烷基矽烷基；再者，複數個R亦可相互鍵結而形成環)
本發明之金屬氮化碳膜或類金屬氮化碳膜係藉由本發明之金屬氮化碳膜或類金屬氮化碳膜之製造方法而獲得。
本發明之金屬氮化碳膜或類金屬氮化碳膜之製造裝置係用於本發明之金屬氮化碳膜或類金屬氮化碳膜之製造方法的金屬氮化碳膜或
類金屬氮化碳膜之製造裝置。本發明之金屬氮化碳膜或類金屬氮化碳膜之製造裝置具備反應室、金屬源或類金屬源供給部、及氮源供給部。反應室具有供配置成膜對象物之配置部。金屬源或類金屬源供給部向反應室內供給金屬源或類金屬源。氮源供給部向反應室內供給氮源。
根據本發明，可提供一種能夠於低溫下製造金屬氮化碳膜或類金屬氮化碳膜之方法。
20‧‧‧金屬氮化碳膜或類金屬氮化碳膜之製造裝置
21‧‧‧反應室
22‧‧‧配置部
23‧‧‧成膜對象物
24‧‧‧金屬源或類金屬源供給部
24a‧‧‧金屬源或類金屬源
25‧‧‧氮源供給部
25a‧‧‧氮源
26‧‧‧膜
圖1係表示本發明之一實施形態之金屬氮化碳膜或類金屬氮化碳膜之製造裝置的模式圖。
於本發明之金屬氮化碳膜或類金屬氮化碳膜之製造方法中，將N-三烷基矽烷基-1,2,3-三唑化合物及通式(1)所表示之1,2,4-三唑化合物之至少一者用作氮源，而成膜金屬氮化碳膜或類金屬氮化碳膜。
(式中，R可相同或者亦可不同，表示氫原子、碳原子數1~5之直鏈狀、支鏈狀、或環狀之烷基、或碳原子數1~5之三烷基矽烷基；再者，複數個R亦可相互鍵結而形成環)
具體而言，供給金屬源或類金屬源、與N-三烷基矽烷基-1,2,3-三唑化合物及通式(1)所表示之1,2,4-三唑化合物之至少一者，而於成膜
對象物上形成金屬氮化碳膜或類金屬氮化碳膜。金屬氮化碳膜或類金屬氮化碳膜之成膜可藉由例如化學氣相沉積法(Chemical Vapor Deposition法；以下稱為CVD法)或原子層沉積法(Atomic Layer Deposition；以下稱為ALD法)而適宜地進行。
於CVD法及ALD法中，為了於成膜對象物上形成膜而需要使氮源氣化，作為使氮源氣化之方法，例如不僅可使用將氮源本身填充或搬送至氣化室中並使之氣化的方法，亦可使用利用液體搬送用泵將使氮源稀釋至適當溶劑(例如可列舉：己烷、甲基環己烷、乙基環己烷、辛烷等脂肪族烴類；甲苯等芳香族烴類；四氫呋喃、二丁醚等醚類等)中而成之溶液導入至氣化室中並使之氣化的方法(溶液法)。
更具體而言，如圖1所示，針對金屬氮化碳膜或類金屬氮化碳膜之製造裝置20之反應室21內所設置之配置部22處配置之成膜對象物23，自反應室21內所設置之金屬源或類金屬源供給部24供給金屬源或類金屬源24a，並且自反應室21內所設置之氮源供給部25供給氮源25a，而將膜26成膜。
蒸鍍金屬氮化碳膜或類金屬氮化碳膜時之N-三烷基矽烷基-1,2,3-三唑化合物或1,2,4-三唑化合物之氣體相對於氣體總量之含有比率較佳為0.1體積%~99體積%，進而較佳為0.5體積%~95體積%。
成膜金屬氮化碳膜或類金屬氮化碳膜時之反應系內之壓力較佳為1Pa~200kPa，進而較佳為10Pa~110kPa。成膜金屬氮化碳膜或類金屬氮化碳膜時之成膜對象物之溫度較佳為100~600℃，進而較佳為200~500℃。成膜金屬氮化碳膜或類金屬氮化碳膜時之使N-三烷基矽烷基-1,2,3-三唑化合物或1,2,4-三唑化合物氣化之溫度較佳為0℃~180℃，進而較佳為10℃~100℃。
(N-三烷基矽烷基-1,2,3-三唑化合物)
N-三烷基矽烷基-1,2,3-三唑化合物係選自由下述式(2)及(3)所組
成之群中之至少1種化合物。再者，式(2)及(3)所表示之化合物為互變異構物。
(式中，R1可相同或者亦可不同，表示碳原子數1~3之直鏈狀、支鏈狀、或環狀之烷基；再者，複數個R1亦可相互鍵結而形成環；
式中，R2可相同或者亦可不同，表示氫原子、碳原子數1~5之直鏈狀、支鏈狀或環狀之烷基、或碳原子數1~5之三烷基矽烷基；再者，複數個R2亦可相互鍵結而形成環)
作為碳原子數1~3之直鏈狀或支鏈狀之烷基，例如可列舉：甲基、乙基、正丙基、異丙基、環丙基等。
式(2)及(3)中，R2為氫原子、碳原子數1~5之直鏈狀、支鏈狀、環狀之烷基、或碳原子數1~5之三烷基矽烷基。
作為碳原子數1~5之直鏈狀、支鏈狀、或環狀之烷基，例如可列舉：甲基、乙基、正丙基、異丙基、正丁基、異丁基、第三丁基、戊基、環丙基、環丁基、環戊基等。
作為碳原子數1~5之三烷基矽烷基，例如可列舉：三甲基矽烷基、三乙基矽烷基、二甲基乙基矽烷基、甲基二乙基矽烷基等。
再者，複數個R2亦可相互鍵結而形成環，作為所形成之環，例如可列舉碳原子數2~10之飽和或不飽和之環。
於本發明中，可較佳地使用之N-三烷基矽烷基-1,2,3-三唑化合物例如以式(4)至式(27)表示。再者，可單獨使用該等N-三烷基矽烷基-
1,2,3-三唑化合物，亦可混合兩種以上而使用。
[化5]
N-三烷基矽烷基-1,2,3-三唑化合物之製造可依據公知方法而進行(例如MAGNETIC RESONANCE IN CHEMISTRY，Vol.36，110，
(1998))。據此，揭示有藉由1,2,3-三唑與六甲基二矽氮烷(雙(三甲基矽烷基)胺)之反應而產生之N-三甲基矽烷基-1,2,3-三唑係以兩種之混合物之形式生成。
(1,2,4-三唑化合物)
於本發明中使用之1,2,4-三唑化合物為下述式(1)所表示之化合物。
(式中，R可相同或者亦可不同，表示氫原子、碳原子數1~5之直鏈狀、支鏈狀、或環狀之烷基、或碳原子數1~5之三烷基矽烷基；再者，複數個R亦可相互鍵結而形成環)
作為碳原子數1~5之直鏈狀、支鏈狀或環狀之烷基，例如可列舉：甲基、乙基、正丙基、異丙基、正丁基、異丁基、第三丁基、戊基、環丙基、環丁基、環戊基等。
作為碳原子數1~5之三烷基矽烷基，例如可列舉：三甲基矽烷基、三乙基矽烷基、二甲基乙基矽烷基、甲基二乙基矽烷基等。
再者，複數個R亦可相互鍵結而形成環，作為所形成之環，例如可列舉碳原子數2~10之飽和或不飽和之環。
於本發明中可較佳地使用之1,2,4-三唑化合物例如以式(28)至式(55)表示。再者，可單獨使用該等1,2,4-三唑化合物，亦可混合兩種以上而使用。
[化7]
(金屬源或非金屬源)
作為金屬源或類金屬源，例如可較佳地使用金屬鹵化物或類金屬鹵化物。
作為金屬鹵化物，可列舉：三氯化鋁、三溴化鋁、三氟化鋁、三碘化鋁、四溴化鈦、四氯化鈦、四氟化鈦、四碘化鈦、四溴化鋯、四氯化鋯、四氟化鋯、四碘化鋯、四溴化鉿、四氯化鉿、四氟化鉿、四碘化鉿、五氯化鉭、五氯化鉬、六氟化鉬、雙環戊二烯基二氯化鉬、六氯化鎢、六氟化鎢、二溴化鈷、二氯化鈷、二氟化鈷、二碘化鈷、二溴化鎳、二氯化鎳、二碘化鎳、二溴化錳、二氯化錳、二氟化錳、二碘化錳、單溴化銅、二溴化銅、單氯化銅、二氯化銅、二氟化銅、二碘化銅、三溴化鎵、三氯化鎵、三氟化鎵、三碘化鎵、三溴化鉍、三氯化鉍、三氟化鉍、三碘化鉍、三溴化釕、三氯化釕、三氟化釕、三氯化銠、二溴化鉑、二氯化鉑、四氯化鉑、二碘化鉑、二溴化鈀、二氯化鈀、二碘化鈀、三碘化釕、苯二氯化釕、二溴化鋅、二氯化鋅、二氟化鋅、二碘化鋅等。
作為類金屬鹵化物，可列舉：四氯矽烷、四氟矽烷、六氯乙矽
烷、氯化五甲基乙矽烷、二氯化四甲基乙矽烷、單氯矽烷、二氯矽烷、三氯矽烷、四溴化鍺、四氯化鍺、四碘化鍺、三溴化硼、三氯化硼、三氟化硼、三碘化硼等。
本發明之金屬氮化碳膜或類金屬氮化碳膜之製造方法特別適於製造矽氮化碳膜。
(金屬氮化碳膜或類金屬氮化碳膜之製造)
於CVD法及ALD法中，為了於成膜對象物上形成膜，需要使氮源氣化，作為使氮源氣化之方法，例如不僅可使用將氮源本身填充或搬送至氣化室並使之氣化的方法，亦可使用利用液體搬送用泵將使氮源稀釋至適當溶劑(例如可列舉：己烷、甲基環己烷、乙基環己烷、辛烷等脂肪族烴類；甲苯等芳香族烴類；四氫呋喃、二丁醚等醚類等)中而成之溶液導入至氣化室並使之氣化的方法(溶液法)。
其次，列舉實施例對本發明具體地進行說明，但本發明之範圍不受該等所限定。
於具備攪拌裝置、溫度計及滴液漏斗之內容積100ml之燒瓶中，添加1,2,3-三唑8.68g(125.7mmol)及六甲基二矽氮烷10.14g(62.8mmol)，一面攪拌混合液一面於145℃~150℃下反應2小時。
於反應結束後，使所獲得之反應液於減壓下蒸餾(120℃，27kPa)，而獲得作為無色透明液體之N-三甲基矽烷基-1,2,3-三唑16.07g(單離產率：90%)。
再者，N-三甲基矽烷基-1,2,3-三唑之物性值如下所述。
1H-NMR(CDCl3,δ(ppm))：0.55(9H,s),7.76(2H,s)
使用表1所示之化合物，於表1所示之條件下，藉由CVD法於20mm×20mm尺寸之基板上成膜膜。又，藉由對所成膜之膜進行XPS(X-ray Photoelectron Spectroscopy，X射線光電子光譜法)分析而特定膜。
由實施例1~3之結果可知，藉由使用N-三烷基矽烷基-1,2,3-三唑化合物，可於低溫下製造矽氮化碳膜。
於具備攪拌裝置、溫度計及滴液漏斗之內容積100ml之燒瓶中，添加1,2,4-三唑5.00g(72.4mmol)及六甲基二矽氮烷5.84g(32.6mmol)，一面攪拌混合液一面於145~150℃下反應4小時。
反應結束後，使所獲得之反應液於減壓下蒸餾(120℃，6.7kPa)，而獲得作為無色透明液體之N-三甲基矽烷基-1,2,4-三唑5.33g(單離產率：52%)。
再者，N-三甲基矽烷基-1,2,4-三唑之物性值如下所述。
1H-NMR(CDCl3,δ(ppm))：0.50(9H,s),8.09(1H,s),8.21(1H,s)
使用表2所示之化合物，於表1所示之條件下，藉由CVD法，於20mm×20mm尺寸之基板上成膜膜。又，藉由對所成膜之膜進行XPS(X-ray Photoelectron Spectroscopy，X射線光電子光譜法)分析而特定膜。
由實施例4~8之結果可知，藉由使用1,2,4-三唑化合物，可於低
溫下製造矽氮化碳膜。
20‧‧‧金屬氮化碳膜或類金屬氮化碳膜之製造裝置
21‧‧‧反應室
22‧‧‧配置部
23‧‧‧成膜對象物
24‧‧‧金屬源或類金屬源供給部
24a‧‧‧金屬源或類金屬源
25‧‧‧氮源供給部
25a‧‧‧氮源
26‧‧‧膜
Claims (12)
- 一種金屬氮化碳膜或類金屬氮化碳膜之製造方法，其係將N-三烷基矽烷基-1,2,3-三唑化合物及通式(1)所表示之1,2,4-三唑化合物之至少一者用作氮源而成膜金屬氮化碳膜或類金屬氮化碳膜，
- 如請求項1之金屬氮化碳膜或類金屬氮化碳膜之製造方法，其中N-三烷基矽烷基-1,2,3-三唑化合物為選自由下述式(2)及(3)所組成之群中之至少1種化合物，
- 如請求項1或2之金屬氮化碳膜或類金屬氮化碳膜之製造方法，其中成膜矽氮化碳膜作為上述類金屬氮化碳膜。
- 如請求項1至3中任一項之金屬氮化碳膜或類金屬氮化碳膜之製造方法，其中將以選自由脂肪族烴類、芳香族烴類及醚類所組成之群中之至少1種作為溶劑之N-三烷基矽烷基-1,2,3-三唑化合物及通式(1)所表示之1,2,4-三唑化合物之至少一者之溶液用作氮供給源。
- 如請求項1至4中任一項之金屬氮化碳膜或類金屬氮化碳膜之製造方法，其中供給金屬源或類金屬源、與N-三烷基矽烷基-1,2,3-三唑化合物及通式(1)所表示之1,2,4-三唑化合物之至少一者，而於成膜對象物上形成金屬氮化碳膜或類金屬氮化碳膜。
- 如請求項5之金屬氮化碳膜或類金屬氮化碳膜之製造方法，其中供給金屬鹵化物或類金屬鹵化物作為上述金屬源或上述類金屬源。
- 如請求項1至6中任一項之金屬氮化碳膜或類金屬氮化碳膜之製造方法，其中將金屬氮化碳膜或類金屬氮化碳膜之成膜溫度設為未達600℃。
- 如請求項7之金屬氮化碳膜或類金屬氮化碳膜之製造方法，其中將金屬氮化碳膜或類金屬氮化碳膜之成膜溫度設為未達550℃。
- 如請求項8之金屬氮化碳膜或類金屬氮化碳膜之製造方法，其中將金屬氮化碳膜或類金屬氮化碳膜之成膜溫度設為500℃以下。
- 一種金屬氮化碳膜或類金屬氮化碳膜，其係藉由如請求項1至9 中任一項之製造方法而獲得。
- 如請求項10之金屬氮化碳膜或類金屬氮化碳膜，其中類金屬為矽。
- 一種金屬氮化碳膜或類金屬氮化碳膜之製造裝置，其係用於如請求項1至11中任一項之金屬氮化碳膜或類金屬氮化碳膜之製造方法者，並且具備：反應室，其具有供配置上述成膜對象物之配置部；金屬源或類金屬源供給部，其向上述反應室內供給上述金屬源或類金屬源；及氮源供給部，其向上述反應室內供給上述氮源。
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| JP2015004617A JP2016130337A (ja) | 2015-01-14 | 2015-01-14 | 金属又は半金属炭窒化膜の製造方法 |
| JP2015015194A JP2016138325A (ja) | 2015-01-29 | 2015-01-29 | 金属又は半金属炭窒化膜の製造方法 |
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| EP (1) | EP3246428A1 (zh) |
| KR (1) | KR20170105483A (zh) |
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| DE102005049393B4 (de) * | 2005-10-15 | 2019-08-08 | Kennametal Widia Produktions Gmbh & Co. Kg | Verfahren zur Herstellung eines beschichteten Substratkörpers, Substratkörper mit einer Beschichtung und Verwendung des beschichteten Substratkörpers |
| JP5064296B2 (ja) * | 2008-05-21 | 2012-10-31 | 東京エレクトロン株式会社 | シリコン炭窒化膜の形成方法および形成装置 |
| US8557702B2 (en) * | 2009-02-02 | 2013-10-15 | Asm America, Inc. | Plasma-enhanced atomic layers deposition of conductive material over dielectric layers |
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| KR20170105483A (ko) | 2017-09-19 |
| US20170342551A1 (en) | 2017-11-30 |
| CN107075675A (zh) | 2017-08-18 |
| EP3246428A1 (en) | 2017-11-22 |
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