TW201312693A - 半導體裝置的製造方法，及半導體裝置 - Google Patents
半導體裝置的製造方法，及半導體裝置 Download PDFInfo
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- TW201312693A TW201312693A TW101132962A TW101132962A TW201312693A TW 201312693 A TW201312693 A TW 201312693A TW 101132962 A TW101132962 A TW 101132962A TW 101132962 A TW101132962 A TW 101132962A TW 201312693 A TW201312693 A TW 201312693A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 458
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- 239000004020 conductor Substances 0.000 claims abstract description 410
- 229910052751 metal Inorganic materials 0.000 claims abstract description 240
- 239000002184 metal Substances 0.000 claims abstract description 240
- 239000012535 impurity Substances 0.000 claims abstract description 50
- 238000003384 imaging method Methods 0.000 claims description 128
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- 239000011810 insulating material Substances 0.000 claims description 3
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- 239000010410 layer Substances 0.000 description 1283
- 229910004298 SiO 2 Inorganic materials 0.000 description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 38
- 239000010703 silicon Substances 0.000 description 38
- 239000010949 copper Substances 0.000 description 28
- 238000005530 etching Methods 0.000 description 20
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- 238000010586 diagram Methods 0.000 description 16
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- 229910052707 ruthenium Inorganic materials 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 13
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- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 11
- 229910052721 tungsten Inorganic materials 0.000 description 11
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- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000009825 accumulation Methods 0.000 description 9
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- 238000006243 chemical reaction Methods 0.000 description 8
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
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- 230000004888 barrier function Effects 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
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- 238000009413 insulation Methods 0.000 description 6
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- 229910001925 ruthenium oxide Inorganic materials 0.000 description 6
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
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- 229910052719 titanium Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
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- 239000000203 mixture Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
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- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
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- 238000004070 electrodeposition Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- SAZXSKLZZOUTCH-UHFFFAOYSA-N germanium indium Chemical compound [Ge].[In] SAZXSKLZZOUTCH-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
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- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8027—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2011/071162 WO2013038553A1 (fr) | 2011-09-15 | 2011-09-15 | Procédé de production d'un dispositif semiconducteur, ainsi que dispositif semiconducteur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201312693A true TW201312693A (zh) | 2013-03-16 |
Family
ID=47882812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101132962A TW201312693A (zh) | 2011-09-15 | 2012-09-10 | 半導體裝置的製造方法，及半導體裝置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5279971B1 (fr) |
| KR (1) | KR20130056897A (fr) |
| CN (1) | CN103119720A (fr) |
| TW (1) | TW201312693A (fr) |
| WO (1) | WO2013038553A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI607327B (zh) * | 2015-12-25 | 2017-12-01 | 矽創電子股份有限公司 | 半導體元件 |
| TWI741835B (zh) * | 2019-10-30 | 2021-10-01 | 新加坡商新加坡優尼山帝斯電子私人有限公司 | 柱狀半導體裝置及其製造方法 |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014203303A1 (fr) | 2013-06-17 | 2014-12-24 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Dispositif à semi-conducteurs ainsi que procédé de fabrication de celui-ci |
| JP5759077B1 (ja) * | 2013-08-07 | 2015-08-05 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置の製造方法、及び、半導体装置 |
| WO2015040705A1 (fr) * | 2013-09-18 | 2015-03-26 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Dispositif à semi-conducteurs et procédé de fabrication de semi-conducteurs |
| WO2015045054A1 (fr) | 2013-09-26 | 2015-04-02 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Dispositif à semi-conducteurs et son procédé de fabrication |
| JP5658426B1 (ja) * | 2013-10-03 | 2015-01-28 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置、及び、半導体装置の製造方法 |
| WO2015068241A1 (fr) | 2013-11-07 | 2015-05-14 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Dispositif de stockage, dispositif à semi-conducteur et procédé de fabrication d'un dispositif de stockage et d'un dispositif à semi-conducteur |
| WO2015071982A1 (fr) * | 2013-11-13 | 2015-05-21 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Dispositif de stockage et méthode de fabrication de dispositif de stockage |
| JP5675003B1 (ja) | 2013-11-13 | 2015-02-25 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置、及び半導体装置の製造方法 |
| WO2015075819A1 (fr) | 2013-11-22 | 2015-05-28 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur |
| JP5657151B1 (ja) * | 2014-01-23 | 2015-01-21 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置、及び半導体装置の製造方法 |
| JP5885050B2 (ja) | 2014-02-12 | 2016-03-15 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置、及び半導体装置の製造方法 |
| JP5867951B2 (ja) * | 2014-02-14 | 2016-02-24 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置、及び半導体装置の製造方法 |
| JP5832057B1 (ja) * | 2014-02-24 | 2015-12-16 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 記憶装置、半導体装置、及び記憶装置、半導体装置の製造方法 |
| JP5838012B1 (ja) | 2014-02-28 | 2015-12-24 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置、及び半導体装置の製造方法 |
| CN106463534B (zh) | 2014-06-23 | 2020-12-11 | 英特尔公司 | 用于形成垂直晶体管架构的技术 |
| JP5864713B2 (ja) * | 2014-12-17 | 2016-02-17 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置 |
| JP5894251B2 (ja) * | 2014-12-22 | 2016-03-23 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置 |
| JP6190435B2 (ja) * | 2015-10-26 | 2017-08-30 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 記憶装置、及び半導体装置 |
| JP6174174B2 (ja) * | 2016-02-05 | 2017-08-02 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置の製造方法、及び、半導体装置 |
| CN110476230B (zh) * | 2017-03-27 | 2023-03-28 | 新加坡优尼山帝斯电子私人有限公司 | 柱状半导体装置与其制造方法 |
| JP6329299B2 (ja) * | 2017-04-20 | 2018-05-23 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置の製造方法、及び、半導体装置 |
| JP6328832B2 (ja) * | 2017-07-05 | 2018-05-23 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置の製造方法、及び、半導体装置 |
| CN113228241B (zh) * | 2018-12-21 | 2024-10-18 | 新加坡优尼山帝斯电子私人有限公司 | 三维半导体装置的制造方法 |
| WO2020245946A1 (fr) * | 2019-06-05 | 2020-12-10 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Procédé de fabrication d'un dispositif à semi-conducteur en colonnes |
| CN114999922B (zh) * | 2022-08-08 | 2022-11-04 | 泰科天润半导体科技（北京）有限公司 | 一种具有耐压结构的碳化硅mosfet的制造方法 |
| JPWO2024201262A1 (fr) * | 2023-03-31 | 2024-10-03 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003142684A (ja) * | 2001-11-02 | 2003-05-16 | Toshiba Corp | 半導体素子及び半導体装置 |
| CN101855725B (zh) * | 2007-09-12 | 2013-08-21 | 新加坡优尼山帝斯电子私人有限公司 | 固态摄像组件 |
| WO2009096000A1 (fr) * | 2008-01-29 | 2009-08-06 | Unisantis Electronics (Japan) Ltd. | Dispositif à mémoire à semiconducteur |
| WO2009096001A1 (fr) * | 2008-01-29 | 2009-08-06 | Unisantis Electronics (Japan) Ltd. | Dispositif à mémoire à semiconducteur, dispositif à semiconducteur à mémoire intégrée et procédé de fabrication de ce dispositif |
| JP4487221B1 (ja) * | 2009-04-17 | 2010-06-23 | 日本ユニサンティスエレクトロニクス株式会社 | 半導体装置 |
-
2011
- 2011-09-15 WO PCT/JP2011/071162 patent/WO2013038553A1/fr not_active Ceased
- 2011-09-15 CN CN2011800445156A patent/CN103119720A/zh active Pending
- 2011-09-15 JP JP2013512670A patent/JP5279971B1/ja active Active
- 2011-09-15 KR KR1020137006643A patent/KR20130056897A/ko not_active Ceased
-
2012
- 2012-09-10 TW TW101132962A patent/TW201312693A/zh unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI607327B (zh) * | 2015-12-25 | 2017-12-01 | 矽創電子股份有限公司 | 半導體元件 |
| TWI741835B (zh) * | 2019-10-30 | 2021-10-01 | 新加坡商新加坡優尼山帝斯電子私人有限公司 | 柱狀半導體裝置及其製造方法 |
| US12029022B2 (en) | 2019-10-30 | 2024-07-02 | Unisantis Electronics Singapore Pte. Ltd. | Pillar-shaped semiconductor device and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130056897A (ko) | 2013-05-30 |
| WO2013038553A1 (fr) | 2013-03-21 |
| CN103119720A (zh) | 2013-05-22 |
| JPWO2013038553A1 (ja) | 2015-03-23 |
| JP5279971B1 (ja) | 2013-09-04 |
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