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TW201126754A - Method for producing semoconductor light-emitting element, and photosensitive composition used for the method for producing semiconductor light-emitting element - Google Patents

Method for producing semoconductor light-emitting element, and photosensitive composition used for the method for producing semiconductor light-emitting element Download PDF

Info

Publication number
TW201126754A
TW201126754A TW100102872A TW100102872A TW201126754A TW 201126754 A TW201126754 A TW 201126754A TW 100102872 A TW100102872 A TW 100102872A TW 100102872 A TW100102872 A TW 100102872A TW 201126754 A TW201126754 A TW 201126754A
Authority
TW
Taiwan
Prior art keywords
semiconductor light
good
emitting device
current blocking
blocking layer
Prior art date
Application number
TW100102872A
Other languages
English (en)
Chinese (zh)
Inventor
Hirokazu Ito
Satoshi Ishikawa
Tetsuya Yamamura
Masaaki Hanamura
Yuichiro Arimura
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW201126754A publication Critical patent/TW201126754A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW100102872A 2010-01-28 2011-01-26 Method for producing semoconductor light-emitting element, and photosensitive composition used for the method for producing semiconductor light-emitting element TW201126754A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010017323 2010-01-28

Publications (1)

Publication Number Publication Date
TW201126754A true TW201126754A (en) 2011-08-01

Family

ID=44318993

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100102872A TW201126754A (en) 2010-01-28 2011-01-26 Method for producing semoconductor light-emitting element, and photosensitive composition used for the method for producing semiconductor light-emitting element

Country Status (3)

Country Link
JP (1) JP5673562B2 (fr)
TW (1) TW201126754A (fr)
WO (1) WO2011092994A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302913A (ja) * 1993-04-12 1994-10-28 Nippon Steel Corp 半導体レーザ素子の製造方法
JP4139321B2 (ja) * 2003-12-11 2008-08-27 日立電線株式会社 発光ダイオードの製造方法
JP2008205008A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd 半導体層間絶縁膜形成用組成物とその製造方法、膜形成方法と半導体装置
WO2009090867A1 (fr) * 2008-01-15 2009-07-23 Sekisui Chemical Co., Ltd. Matériau de réserve et stratifié
JP2009244722A (ja) * 2008-03-31 2009-10-22 Jsr Corp レジスト下層膜用組成物及びその製造方法

Also Published As

Publication number Publication date
JP5673562B2 (ja) 2015-02-18
WO2011092994A1 (fr) 2011-08-04
JPWO2011092994A1 (ja) 2013-05-30

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