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WO2011092994A1 - Procédé de production d'un élément électroluminescent semi-conducteur, élément électroluminescent semi-conducteur et composition photosensible utilisée pour ledit procédé de production d'un élément électroluminescent semi-conducteur - Google Patents

Procédé de production d'un élément électroluminescent semi-conducteur, élément électroluminescent semi-conducteur et composition photosensible utilisée pour ledit procédé de production d'un élément électroluminescent semi-conducteur Download PDF

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Publication number
WO2011092994A1
WO2011092994A1 PCT/JP2010/073774 JP2010073774W WO2011092994A1 WO 2011092994 A1 WO2011092994 A1 WO 2011092994A1 JP 2010073774 W JP2010073774 W JP 2010073774W WO 2011092994 A1 WO2011092994 A1 WO 2011092994A1
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Prior art keywords
semiconductor light
current blocking
blocking layer
layer
emitting element
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English (en)
Japanese (ja)
Inventor
宏和 伊東
悟司 石川
哲也 山村
政暁 花村
雄一朗 有村
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JSR Corp
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JSR Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Definitions

  • the present invention relates to a method for manufacturing a semiconductor light emitting device, a semiconductor light emitting device, and a photosensitive composition used in the method for manufacturing a semiconductor light emitting device.
  • an insulating film called a current blocking layer or a current confinement layer is provided inside the semiconductor light emitting element to emit light. Techniques for improving efficiency are known (Patent Documents 1 to 8).
  • the current blocking layer needs to be formed in various shapes and on various positions and layers, for example, a shape covered with a current diffusion layer, depending on the function of the semiconductor light emitting device.
  • the current blocking layer has been formed by repeatedly performing processes such as CVD-TEOS and etching.
  • An object of the present invention is to provide a method for manufacturing a semiconductor light emitting device, a semiconductor light emitting device, and a photosensitive composition used in the method for manufacturing the semiconductor light emitting device.
  • the present invention includes, for example, the following aspects.
  • the semiconductor light emitting element is positioned below the electrode without being in contact with the electrode, the semiconductor layer, the current diffusion layer formed on the semiconductor layer, the electrode formed on the current diffusion layer, and And a method of manufacturing a semiconductor light-emitting device according to ⁇ 1> (hereinafter also referred to as “second embodiment”), comprising a current blocking layer covered with the current diffusion layer.
  • ⁇ 3> The method for producing a semiconductor light-emitting element according to ⁇ 1> or ⁇ 2>, wherein the photosensitive composition contains a polysiloxane (A) and a photosensitive acid generator (B). (Hereinafter also referred to as “third embodiment”).
  • a semiconductor light-emitting device (hereinafter also referred to as “fourth embodiment”) obtained by the method for manufacturing a semiconductor light-emitting device according to any one of ⁇ 1> to ⁇ 3>.
  • a photosensitive composition (hereinafter also referred to as “fifth embodiment”), which is used in the method for producing a semiconductor light-emitting device according to ⁇ 1> or ⁇ 2>.
  • ⁇ 6> The photosensitive composition as described in ⁇ 5> above, comprising polysiloxane (A) and a photosensitive acid generator (B) (hereinafter also referred to as “sixth embodiment”).
  • the semiconductor light-emitting device according to ⁇ 7>, further including a current blocking layer that exhibits a T-derived signal when measured by 29 Si-NMR by a DD-MAS method.
  • a method of manufacturing a semiconductor light emitting device having a current blocking layer currents of various shapes can be formed on various positions and layers without going through a process such as etching that has the above-described process problems. Since the blocking layer can be formed, the process problem can be solved.
  • the element component is close to the other layer in contact with the current blocking layer, the other layer in contact with the current blocking layer.
  • a current blocking layer having excellent adhesion to the substrate can be formed. For this reason, the problem concerning the process in the manufacturing method of a semiconductor light-emitting device can be solved. Furthermore, since the target shape can be accurately formed in the semiconductor layer having a step, the process margin can be widened.
  • the semiconductor light-emitting element is obtained by the method for manufacturing a semiconductor light-emitting element in which the problem relating to the process is solved, the semiconductor light-emitting element having excellent performance such as light emission efficiency is obtained.
  • the present invention can be effectively applied to a method for manufacturing a semiconductor light emitting device in which a problem relating to a process is solved.
  • a current blocking layer having excellent adhesion to other layers in contact with the current blocking layer can be formed, so that it is more useful for a method for manufacturing a semiconductor light emitting device in which the problems associated with the process are eliminated. Can be applied to.
  • FIG. 3 is a cross-sectional view of an example of a current blocking semiconductor light emitting element. Sectional drawing explaining an example of the manufacturing method of a semiconductor light-emitting device. The schematic diagram explaining an example of the shape of the pattern used for evaluation of a pattern shape. The schematic diagram explaining an example of the base material for electrical insulation evaluation.
  • FIG. 29 is a 29 Si-NMR chart according to the DD-MAS method of Example 15. 29 Si-NMR chart obtained by DD-MAS method in Example 16.
  • the semiconductor light-emitting element of the present invention relates to the fourth embodiment, and is obtained by “[2] Manufacturing method of semiconductor light-emitting element” described later.
  • various procedures can be considered depending on the configuration and shape of the semiconductor light emitting device, but the semiconductor light emitting device of the present invention is formed by “[2-1] Method for forming current blocking layer” described later.
  • the current blocking layer is not particularly limited.
  • Examples of the configuration and shape of the current blocking layer of the semiconductor light emitting device include a current blocking structure and a current confinement structure.
  • Examples of the configuration and shape of the electrodes of the semiconductor light emitting device include a normal type in which the upper electrode and the lower electrode face each other and a trench type in which the upper electrode and the lower electrode are in the same direction.
  • a structure and shape of the semiconductor layer of a semiconductor light-emitting device a double heterojunction type and a quantum well junction type are mentioned, for example.
  • the configuration and shape of the semiconductor light emitting device include, for example, Japanese Patent Application Laid-Open Nos. 2009-170655, 2007-173530, 2007-157778, 2005-294870, and 2004. -29679, JP-A-2004-047662, JP-A-2003-243703, JP-A-2003-88641, JP-A-2002-329885, JP-A-2002-066421, JP-A-2001-274456 JP, 2001-196629, 2001-177147, 2001-068786, 2000-261029, 2000-124502, 10-294531 JP 09-31442 A and JP It includes structural and shape according to the flat 09-237916 JP.
  • the term “current blocking layer” refers to a current blocking layer in a narrow sense that is used to prevent the light emitting region of the active layer from being positioned directly below an opaque electrode on the light extraction side.
  • the current confinement is used to reduce local current concentration on the active layer by preventing the light emitting region of the active layer from being located directly below the electrode on the light extraction side, and to suppress light absorption in the semiconductor substrate. It means a layer including a layer.
  • FIG. 1 shows a cross-sectional view of a current blocking semiconductor light emitting device as a representative example of the semiconductor light emitting device of the present invention.
  • the semiconductor light emitting element shown in FIG. 1 is also an example of the fourth embodiment according to the second embodiment.
  • the semiconductor light emitting device of FIG. 1 is provided on a sapphire substrate 100 in the order of a buffer layer 101, a semiconductor layer 110, a current diffusion layer 120, and an upper electrode 131.
  • a current blocking layer 140 is provided so as to be positioned below the upper electrode without being in contact with the upper electrode 131 and covered with the current diffusion layer 120.
  • the semiconductor layer 110 is a double heterojunction type, and is provided on the buffer layer 101 in the order of an n-type cladding layer 111, an active layer 112, and a p-type cladding layer 113.
  • the lower electrode 132 is provided on a part of the n-type cladding layer and is provided in the same direction as the upper electrode 131.
  • the current diffusion layer is a transparent electrode such as tin-doped indium oxide.
  • the buffer layer 101, the semiconductor layer 110, the current diffusion layer 120, the upper electrode 131, and the lower electrode may be formed by a known method such as a vapor phase epitaxial growth method, a liquid phase epitaxial growth method, a hydride vapor phase growth method, or a metal organic vapor phase growth method ( MOCVD method), molecular beam epitaxy method (MBE method), metalorganic molecular beam epitaxy method (MOMBE method), sputtering method, etc., and then, if necessary, formed by etching or grinding using resist as a mask Can do.
  • MOCVD method metal organic vapor phase growth method
  • MBE method molecular beam epitaxy method
  • MOMBE method metalorganic molecular beam epitaxy method
  • sputtering method etc.
  • the current blocking layer can be formed by “[2-1] Method for forming current blocking layer” described later.
  • a reflective layer used for amplifying light can be formed, and a substrate other than a sapphire substrate can be used.
  • the current blocking layer often has various shapes.
  • a pattern obtained from the photosensitive composition is formed by lithography, and the pattern is used as a current blocking layer. Therefore, the current blocking layer can be processed into various shapes.
  • [2] Method for Manufacturing Semiconductor Light-Emitting Element In the method for manufacturing a semiconductor light-emitting element of the present invention, various procedures can be considered depending on the configuration and shape of the semiconductor light-emitting element. As long as the current blocking layer is formed by the method described in “[2-1] Method for Forming Current Blocking Layer”, it is not particularly limited. In other words, the method for manufacturing a semiconductor light emitting device of the present invention is the same as the method described in “[1] Semiconductor light emitting device” described above, “[2-1] Method for forming current blocking layer” described later. Various embodiments can be applied depending on the configuration and shape of the semiconductor light-emitting element, except that the forming method described in 1 is used.
  • FIG. 2 shows a method for manufacturing a current blocking semiconductor light emitting device (nitride semiconductor light emitting device) as a representative example of the method for manufacturing a semiconductor light emitting device of the present invention.
  • the method for manufacturing the semiconductor light emitting element shown in FIG. 2 is also an example of the second embodiment.
  • a buffer layer 201, an n-type cladding layer 211 such as n-type GaN, and an active layer 212 such as InGaN / GaN are formed on the sapphire substrate 200 by metal organic chemical vapor deposition.
  • a semiconductor layer such as a p-type cladding layer 213 such as p-type GaN is grown sequentially.
  • a resist mask (not shown) is formed on the substrate of FIG. 2A in order to expose the surface of the n-type cladding layer 211 forming the lower electrode 232, and the cross-sectional view of FIG. As shown, the surface of the n-type cladding layer 211 is exposed by removing a part of the semiconductor layer 210 where the resist mask (not shown) is not formed. Thereafter, the resist mask (not shown) is removed.
  • a current blocking layer 240 is formed on the p-type cladding layer 213 by the current blocking layer forming method described in “[2-1] Method for forming current blocking layer” below. To do. Thereafter, a current diffusion layer 220 made of tin-doped indium oxide is formed so as to cover the current blocking layer 240.
  • the upper electrode 231 and the lower electrode 232 are formed by vacuum evaporation or the like.
  • a current blocking type semiconductor light emitting device (FIG. 2D) can be manufactured.
  • the manufacturing is performed in the order of (a), (b), (c), and (d) in the above description, but is not limited to this order. It is possible to change the order as appropriate.
  • a protective film may be formed to protect the semiconductor layer.
  • a method for forming a current blocking layer in the method for producing a semiconductor light emitting device of the present invention is to form a pattern obtained from a photosensitive composition by lithography, and use the pattern as a current blocking layer. It is what.
  • the lithography method forms a pattern by selectively irradiating the coating film obtained from the photosensitive composition with radiation (there is no limitation on the wavelength) through a mask, if necessary, and then developing. It is a general term for methods to do.
  • a photosensitive composition is applied on a substrate, and in the case of a photosensitive composition containing a volatile component such as a solvent, the solvent is volatilized to form a coating film.
  • the details of the photosensitive composition will be described later in “[3] Photosensitive composition”.
  • the substrate is a layer for forming a current blocking layer on a layer such as a semiconductor layer or a current diffusion layer, and is appropriately selected depending on the configuration and shape of the semiconductor light emitting device.
  • various application methods such as a dipping method, a spray method, a bar coating method, a roll coating method, and a spin coating method can be employed.
  • the thickness of the coating film can be appropriately controlled by adjusting the coating means, the solid content concentration of the resin composition solution, the viscosity, and the like.
  • the thickness of the coating film can be controlled by changing the rotation speed.
  • the obtained coating film is exposed through a mask having a desired pattern as necessary.
  • radiation used for exposure include ultraviolet rays and electron beams emitted from low-pressure mercury lamps, high-pressure mercury lamps, metal halide lamps, g-line steppers, h-line steppers, i-line steppers, KrF steppers, ArF steppers, EB exposure apparatuses, and the like. And laser beam.
  • the exposure amount can be appropriately set depending on the light source used, the film thickness of the coating film, and the like.
  • the film thickness is from 100 to 100 at a film thickness of 0.05 to 50 ⁇ m. It can be about 20,000 J / m 2 .
  • PEB a heat treatment
  • the acid generated by exposure can be made to act more efficiently.
  • the PEB conditions vary depending on the components of the photosensitive composition used for forming the coating film, the solid content concentration, the film thickness of the coating film, etc., but are usually 50 to 180 ° C., preferably 60 to 150 ° C. and 1 to About 60 minutes.
  • a pattern can be formed by development.
  • a positive photosensitive composition an exposed portion is developed, and in the case of a negative photosensitive composition, an unexposed portion is developed with an alkaline developer, etc., and dissolved and removed to form a desired pattern. can do.
  • Developing methods include shower developing method, spray developing method, immersion developing method, paddle developing method and the like.
  • the development conditions are usually about 20 to 40 ° C. and about 0.5 to 10 minutes.
  • the alkaline developer examples include an alkaline developer in which an alkaline compound such as sodium hydroxide, potassium hydroxide, aqueous ammonia, tetramethylammonium hydroxide, choline, etc. is dissolved in water so as to have a concentration of 1 to 10% by mass.
  • An aqueous solution may be mentioned.
  • an appropriate amount of a water-soluble organic solvent such as methanol and ethanol, a surfactant, and the like can be blended in the alkaline aqueous solution.
  • it is usually washed with water and dried.
  • heat treatment may be performed after development.
  • the characteristics as the current blocking layer, such as insulation, can be sufficiently exhibited.
  • Such curing conditions are not particularly limited, but are usually 50 to 600 ° C., more preferably about 1 minute to 10 hours.
  • heat processing are normally performed under nitrogen or air
  • It can also be heated in multiple stages. By heating in multiple stages, sudden volatilization of solvents and the like contained in the pattern after development is suppressed, and in the pattern after development, crosslinking of components in the photosensitive composition is performed. A reaction such as a reaction can be moderately advanced. Thereby, the current blocking layer obtained by the heat treatment can be prevented from being damaged by a process such as a heat treatment performed when another layer formed after the formation of the current blocking layer is formed.
  • the first stage is heated at a temperature of 100 to 250 ° C. for about 5 minutes to 2 hours, and the second stage is 10 to a temperature of 250 to 500 ° C. A method of heating for about 10 minutes is possible.
  • the pattern obtained as described above is used as a current blocking layer.
  • a pattern obtained from the photosensitive composition by lithography and using the pattern as a current blocking layer, various positions and Various shapes of current blocking layers can be formed on the layer.
  • the formation of other layers formed after the current blocking layer can be reduced.
  • other layers such as a current diffusion layer
  • MOCVD metalorganic vapor phase epitaxy
  • MBE molecular beam epitaxy
  • MOMBE organometallic molecular beam epitaxy
  • a sputtering method or the like to form another layer, it is possible to prevent an adverse effect (process damage) on the formed current blocking layer such as a decrease in insulation.
  • the current blocking layer is formed using a photosensitive composition containing polysiloxane (A) and a photosensitive acid generator (B) as in the third embodiment, such as LED and semiconductor laser.
  • a photosensitive composition containing polysiloxane (A) and a photosensitive acid generator (B) as in the third embodiment, such as LED and semiconductor laser.
  • the element component can be brought close to another layer in contact with the current blocking layer.
  • the current blocking layer obtained by the third embodiment has excellent adhesion to other layers in contact with the current blocking layer.
  • a transparent coating film can be formed, it is possible to solve the problem of depth of focus, which is a problem during exposure. For this reason, when forming a coating film with irregular depth of focus, such as a semiconductor layer with a step, and exposing the coating film to form a pattern, the target shape is more accurate than other photosensitive compositions. Can be formed.
  • photosensitive composition used in the method for producing a semiconductor light emitting device of the present invention (hereinafter also simply referred to as “photosensitive composition”) is any material that can form a pattern by lithography. It can be used without restriction.
  • the photosensitive composition may be a negative photosensitive composition (hereinafter also simply referred to as “negative type”) or a positive photosensitive composition (hereinafter also simply referred to as “positive type”).
  • the negative type is a photosensitive composition in which a portion irradiated with radiation remains as a post-development pattern in a coating film obtained from the photosensitive composition.
  • the positive type is a photosensitive composition in which a non-irradiated portion of the radiation remains as a post-development pattern in a coating film obtained from the photosensitive composition.
  • the pattern obtained from the photosensitive composition by the lithography method remains in the semiconductor light emitting device as a current blocking layer, the pattern is required to have stability against light and heat such as light resistance and heat resistance. For this reason, the negative type from which the pattern excellent in the stability with respect to light and a heat
  • This photosensitive composition usually contains a polymer.
  • This polymer may be an organic polymer or an inorganic polymer.
  • the organic polymer means a polymer containing a skeleton mainly composed of carbon (for example, a skeleton composed of C, C and O, or C and N), and the inorganic polymer is It means a polymer containing a skeleton mainly composed of an element other than carbon (for example, a skeleton composed of Si, Si and O, Ti and O, Si and C, or the like).
  • an organic photosensitive composition containing an organic polymer as a main component (hereinafter, also simply referred to as “organic”) and an inorganic polymer as a main component.
  • an inorganic photosensitive composition (hereinafter, also simply referred to as “inorganic”).
  • an inorganic type is preferable from the point of affinity and adhesiveness with other layers, such as a semiconductor layer.
  • an inorganic system that can provide a pattern having excellent stability to light and heat is preferable.
  • a semiconductor light-emitting device mainly composed of an inorganic component such as an LED or a semiconductor laser
  • the element component is close to other layers in contact with the current blocking layer
  • other layers in contact with the current blocking layer are formed by using an inorganic system.
  • a current blocking layer having excellent adhesion to the substrate can be formed.
  • a transparent coating film can be formed, the problem of the depth of focus which becomes a problem during exposure can be solved, which is preferable.
  • the organic polymer when the total amount of the polymer contained in the photosensitive composition is 100% by mass, the organic polymer is contained in an amount of 50% by mass or more (may be 100% by mass). It is. That is, the inorganic polymer is not included, or even if included, it is less than 50% by mass.
  • the inorganic polymer when the total amount of the polymer contained in the photosensitive composition is 100% by mass, the inorganic polymer is contained in an amount of 50% by mass or more (may be 100% by mass). Is. That is, the organic polymer is not contained, or even if contained, it is less than 50% by mass.
  • a positive and organic photosensitive composition hereinafter also referred to as “positive-organic”
  • a positive and inorganic photosensitive composition hereinafter referred to as “positive-type”.
  • positive-type also referred to as “inorganic”
  • negative-organic negative-type and organic photosensitive compositions
  • negative-inorganic negative-type and inorganic photosensitive compositions
  • Examples of the positive-organic type include, for example, JP-A-2009-133924, JP-A-2001-281862, JP-A-11-106606, JP-A-2008-192774, JP-A-2004-309776, and the like.
  • the composition described in Kaikai 2004-125815 can be used.
  • compositions containing Compositions containing an alkali-soluble organic polymer and a naphthoquinone diazide compound, which use the alkali solubility inhibiting effect of naphthoquinone diazide.
  • compositions described in JP-A-2007-279073 and 2007-182555 can be used.
  • Examples of the negative organic system include, for example, JP-A-2007-293306, JP-A-2003-215802, JP-A-2004-10660, JP-A-2003-258422, JP-A-2004-10660, Compositions described in JP-A No. 2004-171026 and the like can be used.
  • a composition containing an alkali-soluble organic polymer, a compound having a radical polymerizable unsaturated bond group (for example, a methacryl group or a vinyl group), and a radiation-sensitive radical generator A composition containing an alkali-soluble organic polymer, a compound that undergoes a crosslinking reaction by the action of an acid (for example, a compound having an epoxy group or a melamine compound), and a photosensitive acid generator; And a composition containing an organic polymer having a radical-polymerizable unsaturated bond group (for example, methacryl group or vinyl group) and a radiation-sensitive radical generator; an alkali-soluble and crosslinking reaction by the action of an acid. Examples thereof include a composition containing an organic polymer having a proceeding group (for example, an epoxy group) and a photosensitive acid generator.
  • Examples of the negative inorganic compound include compositions described in JP-A No. 2004-212983, WO 04/111734, WO 05/036269, JP-A 2004-198906, and JP-A 2005-266474. Can be used.
  • a composition comprising an alkali-soluble inorganic polymer, a compound having a radical-polymerizable unsaturated bond group (for example, a methacryl group or a vinyl group), and a radiation-sensitive radical generator.
  • a composition containing an alkali-soluble inorganic polymer, a compound that undergoes a crosslinking reaction by the action of an acid for example, a compound having an epoxy group or a melamine compound
  • a composition containing an inorganic polymer having a radical polymerizable unsaturated bond group for example, a methacryl group or a vinyl group
  • a radiation-sensitive radical generator for example, an alkali-soluble and crosslinking reaction by the action of an acid.
  • the negative-inorganic type is preferably a composition containing a metal alkoxide condensate and a photosensitive acid generator, and the metal alkoxide condensate is preferably a polysiloxane. It is more preferable in that it is excellent in the affinity and the adhesiveness, and is stable in terms of light and heat. In addition, in order to increase luminous efficiency, the surface of the semiconductor layer is often not flat but uneven. In this case, it is necessary to form a coating film made of the photosensitive composition on the uneven surface. When the metal alkoxide condensate is polysiloxane, the resulting coating film has high transparency, which is preferable from the viewpoint that a desired pattern can be accurately formed even on an uneven surface.
  • the above-mentioned alkali-soluble polymer is a polymer having a solubility in a 2.38 mass% tetraammonium hydroxide aqueous solution (alkaline liquid) of the coating film made of the polymer of 100 kg / second or more. It is.
  • a poorly alkali-soluble polymer is a polymer having a solubility of a coating film made of the polymer in a 2.38 mass% tetraammonium hydroxide aqueous solution (alkaline liquid) of less than 100 kg / sec. It is.
  • a polymer obtained by condensing a silane compound is preferable. More specifically, a silane compound represented by R a Si (OR 1 ) 4-a (hereinafter referred to as “compound (a1)”) and a silane compound represented by Si (OR 2 ) 4 (hereinafter referred to as “compound”). It is preferably a polymer obtained by condensing at least one silane compound selected from (a2) ".
  • R represents a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1 to 5 carbon atoms, a cyano group, a cyanoalkyl group, or an alkylcarbonyloxy group
  • R 1 represents Represents a monovalent organic group
  • a represents an integer of 1 to 3.
  • R 2 represents a monovalent organic group.
  • Examples of the monovalent organic group in R 1 of the compound (a1) include an alkyl group, an alkenyl group, an aryl group, an allyl group, and a glycidyl group.
  • Examples of the compound (a1) include methyltrimethoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltri-iso-propoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, Diethyldimethoxysilane, diethyldiethoxysilane, vinyltrimethoxysilane, phenyltrimethoxysilane and the like are preferable.
  • the monovalent organic group in R 1 of the compound (a1) can be applied as it is. However, it may be different may be the same as R 1 R 2 with a compound of the compound (a2) (a1).
  • Examples of the compound (a2) include tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-iso-propoxysilane, tetra-n-butoxysilane, tetra-sec-butoxysilane, tetra-tert-butoxysilane, tetra Examples include phenoxysilane. Among these, tetramethoxysilane and tetraethoxysilane are preferable.
  • hydrolyzable silane compound constituting the polysiloxane (A) only the compound (a1) and the compound (a2) may be used, but if necessary, R 3 x (R 4 O) 3-x Si
  • a hydrolyzable silane compound represented by — (R 7 ) z —Si (OR 5 ) 3-y R 6 y (hereinafter referred to as “compound (a3)”) can be used in combination.
  • R 3 to R 6 are the same or different and each represents a monovalent organic group
  • x and y are the same or different and each represents a number of 0 to 2
  • R 7 represents an oxygen atom
  • phenylene represents a group or a group represented by — (CH 2 ) n — (wherein n is an integer of 1 to 6), and z represents 0 or 1.
  • the monovalent organic group in R 3 to R 6 of the compound (a3) can be applied as it is. However, it may be different may be respectively same as the R 1 of R 3 ⁇ R 6 with a compound of the compound (a3) (a1).
  • the content of the structural unit derived from the compound (a1) is preferably 30 to 100 mol%, and preferably 60 to 100 Mole% is more preferable, and 70 to 100 mol% is still more preferable.
  • the content of the structural unit derived from the compound (a1) is 30 to 100 mol%, the affinity and adhesion to other layers such as a semiconductor layer are excellent, and the target pattern can be accurately formed even on the uneven surface. It is preferable in that it can be formed.
  • the content of the structural unit derived from the compound (a2) is preferably 0 to 70 parts by mass, more preferably 0 to 40 parts by mass, when the content of the structural unit derived from the compound (a1) is 100 parts by mass. preferable.
  • the content of the structural unit derived from the compound (a2) is from 0 to 70 parts by mass, it has excellent affinity and adhesion to other layers such as a semiconductor layer, and the target pattern can be accurately formed on the uneven surface. It is preferable in that it can be formed.
  • the content of the structural unit derived from the compound (a3) is preferably 50 parts by mass or less, and 0 to 40 parts by mass when the content of the structural unit derived from the compound (a1) is 100 parts by mass. More preferred is 0 to 30 parts by mass.
  • the effect by including the structural unit derived from each compound of the compound (a1) and compound (a2) in polysiloxane in pattern formation as the content rate of the structural unit derived from a compound (a3) is 50 mass parts or less
  • the effect including the structural unit derived from the compound (a3) can be more effectively obtained without inhibiting the above.
  • the polystyrene-reduced weight average molecular weight of the polysiloxane (A) by size exclusion chromatography (SEC) method is preferably 1000 to 100,000, more preferably 1000 to 10,000.
  • the weight average molecular weight is 1,000 to 100,000, it is possible to achieve both excellent coating properties and high storage stability while suppressing unnecessary gelation before curing.
  • silsesquioxanes having a crosslinking group such as octa [(1,2-epoxy-4-cyclohexyl) dimethylsiloxy] silsesquioxane, octa [( 3-glycidoxypropyl) dimethylsiloxy] silsesquioxane or the like may be added.
  • reaction byproducts such as lower alcohols such as methanol and ethanol.
  • Polysiloxane (A) may be used after being isolated from the polymer solution, or may be used as the polymer solution. In addition, when using as a polymer solution, the solvent substitution of the below-mentioned solvent may be carried out as needed.
  • the photosensitive acid generator (B) (hereinafter also referred to as “acid generator (B)”) is a component that generates an acid upon exposure.
  • the acid generated from the acid generator (B) promotes the crosslinking of the polysiloxane (A), and as a result, the curing of the film proceeds and the mechanical properties are increased. It is possible to form an excellent pattern.
  • the light source for exposure include radiation (ArF excimer laser (wavelength 193 nm) or KrF excimer laser (wavelength 248 nm)) such as a charged particle beam such as visible light, ultraviolet light, far ultraviolet light, X-ray, and electron beam. .
  • acid generator (B) known compounds can be used.
  • the compounds described in JP-A-2008-192774, JP-A-2007-256935, and JP-A-2007-178903 are used. Can do.
  • onium salt compounds including thiophenium salt compounds
  • halogen-containing compounds diazoketone compounds, sulfone compounds, sulfonic acid compounds, diazomethane compounds, sulfonimide compounds, and the like
  • diazoketone compounds halogen-containing compounds
  • sulfone compounds sulfonic acid compounds
  • diazomethane compounds diazomethane compounds
  • sulfonimide compounds and the like
  • an acid generator (B) only 1 type may be used and 2 or more types may be used together.
  • an onium salt compound is preferable and a thiophenium salt compound is more preferable from the viewpoint of compatibility with the polysiloxane (A) and the resolution and sensitivity of the photosensitive composition.
  • onium salt compound examples include 1- (4,7-di-n-butoxynaphthalen-1-yl) tetrahydrothiophenium salt compound, 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium Thiophenium salt compounds such as salt compounds, 1- (6-n-butoxynaphthalen-2-yl) tetrahydrothiophenium salt compounds, 1- (3,5-dimethyl-4-hydroxyphenyl) tetrahydrothiophenium salt compounds; Iodonium salt compounds such as bis (4-t-butylphenyl) iodonium salt compounds and diphenyliodonium salt compounds; triphenylsulfonium salt compounds, 4-t-butylphenyldiphenylsulfonium salt compounds, 4-cyclohexylphenyldiphenylsulfonium salt compounds, 4 -Methanesulfoni Sulfonium salt compounds such as phenyl di
  • the content of the acid generator (B) is not particularly limited, but is usually 0.1 to 30 parts by mass with respect to 100 parts by mass of the polysiloxane from the viewpoint of ensuring sensitivity and resolution. -20 parts by mass is preferable, and 0.1-15 parts by mass is more preferable. In the preferred range, the sensitivity and resolution are excellent, transparency to radiation can be sufficiently obtained, and a good pattern shape can be obtained more easily.
  • a solvent an acid diffusion controller, a surfactant, a sensitizer, an acid proliferating agent, a crosslinking agent, an antihalation agent, a storage stabilizer, an antifoaming agent, and the like can be appropriately contained.
  • the solvent is used so as to control the overall state (for example, viscosity) of the sixth embodiment so that the functions of the polysiloxane (A) and the acid generator (B) can be expressed well.
  • an organic solvent can be preferably used as the solvent.
  • ketone organic solvents such as methyl ethyl ketone and cyclohexanone
  • ester solvents such as gamma butyrolactone
  • glycol monomers such as propylene glycol monomethyl ether acetate and diethylene glycol monoethyl ether acetate
  • examples include ether monoesters; alkyl ethers such as propylene glycol monomethyl ether and propylene glycol monoethyl ether; alkyl alcohols such as 4-methyl-2-pentanol.
  • the acid diffusion control agent has an action of controlling undesired chemical reaction in the non-irradiated region by controlling unnecessary diffusion of acid generated by radiation from the photosensitive acid generator in the coating film.
  • the acid diffusion controller include triethylamine, trioctylamine, 2-phenylimidazole, 2-phenylbenzimidazole, Nt-butoxycarbonyl-2-phenylbenzimidazole, etc. whose basicity does not change by irradiation with radiation or heating. Nitrogen-containing organic compounds are preferred.
  • Surfactant is added to improve the flattening of the coating film, the flattening of the outer periphery of the substrate, and the striation.
  • surfactants include silicon surfactants, fluorine surfactants, and acrylic surfactants. More specifically, F-top EF301, EF303, EF352 (manufactured by Tochem Products), MegaFuck F171, F172, F173 (manufactured by Dainippon Ink and Chemicals), Florard FC430, FC431 (manufactured by Sumitomo 3M), Surflon Fluorosurfactants such as S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106 (manufactured by Asahi Glass Co., Ltd.), 250, 251 and 222F, FTX-218 (manufactured by Neos), SH Examples include silicon surfactants such as -192, SH-193, FZ-3789, SF8427, and SH8400 (man
  • the semiconductor light emitting device of the present invention forms a pattern obtained from a photosensitive composition containing polysiloxane (A) and an acid generator (B) by lithography, and uses the pattern as a current blocking layer.
  • the integration ratio of the signal derived from Q4 obtained when this current blocking layer is measured by 29 Si-NMR by the DD-MAS method is 50% or less when the total integration ratio is 100%.
  • the polysiloxane (A) is a polysiloxane obtained by condensing a mixture containing the compound (a1) and the compound (a2)
  • the current blocking layer is measured by 29 Si-NMR by the DD-MAS method. Then, a signal derived from T is obtained.
  • the signal derived from Q4 is a signal derived from a silicon atom in which four silicon atoms are bonded to another silicon atom via an oxygen atom, and a signal having a chemical shift in the range of ⁇ 125 to ⁇ 105 ppm.
  • the 29 Si signal of silane of tetramethylsilane is 0 ppm).
  • the signal derived from T is a signal obtained by combining the signal derived from T1, the signal derived from T2, and the signal derived from T3, and a signal having a chemical shift in the range of ⁇ 80 to ⁇ 40 ppm (the silane of tetramethylsilane). 29 Si signal is 0 ppm).
  • the signal derived from T1 is that one silicon atom is bonded to another silicon atom via an oxygen atom, two hydrogen atoms or carbon atoms are bonded via an oxygen atom, and one hydrogen atom or carbon atom is bonded.
  • a signal derived from a silicon atom in a bonded state is shown.
  • a signal derived from T2 means that two silicon atoms are bonded to another silicon atom through an oxygen atom, one hydrogen atom or a carbon atom is bonded through an oxygen atom, and one hydrogen atom or a carbon atom is bonded.
  • a signal derived from a silicon atom in a bonded state is shown.
  • the signal derived from T3 indicates a signal derived from a silicon atom in which three silicon atoms are bonded to another silicon atom via an oxygen atom and are bonded to one hydrogen atom or carbon atom.
  • A2 component In a flask purged with nitrogen, 1 part of a 20% maleic acid aqueous solution and 69 parts of ultrapure water were added and heated to 65 ° C. Next, a solution obtained by mixing 20 parts of tetramethoxysilane, 55 parts of methyltrimethoxysilane, 30 parts of allyltrimethoxysilane and 14 parts of propylene glycol monoethyl ether was dropped into the reaction vessel over 1 hour and stirred at 65 ° C. for 2 hours. I let you. The reaction solution was returned to room temperature to obtain polysiloxane A2.
  • A3 component In a flask purged with nitrogen, 67 parts of methyltrimethoxysilane, 19 parts of tetraethoxysilane and 130 parts of propylene glycol monoethyl ether were added and stirred, and then 240 parts of 0.1% oxalic acid aqueous solution was added at 60 ° C. The solution was added dropwise to the reaction vessel over time, and the solution temperature was stirred at 85 ° C. for 4 hours. The reaction solution was returned to room temperature to obtain polysiloxane A3.
  • A4 component In a flask purged with nitrogen, 0.05 parts of oxalic acid, 20 parts of methyltrimethoxysilane, 7 parts of tetraethoxysilane, 29 parts of phenyltrimethoxysilane and 25 parts of 1-methoxy-2-propanol were added and stirred. The temperature of the solution was heated to 60 ° C. Next, 18 parts of distilled water was added dropwise, and after completion of the addition, the solution was stirred at 100 ° C. for 3 hours. The reaction solution was returned to room temperature to obtain polysiloxane A4.
  • A5 component In a flask purged with nitrogen, 60 parts of methyltrimethoxysilane, 40 parts of tetraethoxysilane and 20 parts of 1-methoxy-2-propanol were added and stirred, and then the temperature of the solution was heated to 60 ° C. Next, 38 parts of a 0.1% oxalic acid aqueous solution was added dropwise, and after completion of the addition, the solution was stirred at 100 ° C. for 2 hours. The reaction solution was returned to room temperature to obtain polysiloxane A5.
  • A6 component In a flask purged with nitrogen, 70 parts of methyltrimethoxysilane, 20 parts of tetraethoxysilane and 22 parts of 1-methoxy-2-propanol were added and stirred, and then the temperature of the solution was heated to 60 ° C. Next, 39 parts of a 0.1% oxalic acid aqueous solution was added dropwise, and after completion of the addition, the solution was stirred at 100 ° C. for 2 hours. The reaction solution was returned to room temperature to obtain polysiloxane A6.
  • A7 component In a flask purged with nitrogen, 40 parts of methyltrimethoxysilane, 60 parts of tetraethoxysilane and 18 parts of 1-methoxy-2-propanol were added and stirred, and then the temperature of the solution was heated to 60 ° C. Subsequently, 37 parts of a 0.1% oxalic acid aqueous solution was added dropwise, and after completion of the addition, the solution was stirred at 100 ° C. for 2 hours. The reaction solution was returned to room temperature to obtain polysiloxane A7.
  • B1 component 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium trifluoromethanesulfonate.
  • Component B2 triphenylsulfonium nonafluoro-n-butanesulfonate.
  • B3 component 1- (4,7-di-n-butoxynaphthalen-1-yl) -tetrahydrothiophenium trifluoromethanesulfonate.
  • Component B4 2- [2- (furan-2-yl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine.
  • C1 component 2-phenylbenzimidazole.
  • C2 component trioctylamine.
  • Component C3 Nt-butoxycarbonyl-2-phenylbenzimidazole.
  • Component D1 dimethylpolysiloxane-polyoxyalkylene copolymer (silicon surfactant, manufactured by Toray Dow Corning Silicon, trade name “SH8400”).
  • E1 component propylene glycol monoethyl ether.
  • E2 component Propylene glycol monomethyl ether.
  • each substrate is as follows. Silicon wafer: A substantially flat silicon wafer substrate having a silicon oxide film of about 0.4 ⁇ m on the surface.
  • GaN substrate p-type GaN substrate having protrusions with a height of 1.2 ⁇ m to 0.4 ⁇ m.
  • the film thickness of the coating film in the case of a GaN substrate indicates the thickness from a protrusion having a height of 1.2 ⁇ m.
  • this film was baked at 400 ° C., and the volume resistivity ( ⁇ ⁇ m) of the baked film was regarded as insulating properties after baking.
  • the evaluation criteria for insulation are as follows. The evaluation results are shown in Table 2. Good: Volume resistivity of 10 14 ⁇ ⁇ cm or more. Defect: Volume resistivity is less than 10 14 ⁇ ⁇ cm.
  • the current blocking layer obtained by lithography of the photosensitive compositions of Examples 1 to 11 can be easily formed in various shapes on various substrates. Therefore, a semiconductor light emitting device having good performance such as luminous efficiency can be obtained.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention a trait à un procédé de production d'un élément électroluminescent semi-conducteur doté d'une couche de blocage de courant et permettant de former une couche de blocage de courant de diverses formes sur diverses positions sur la couche sans utiliser de processus de gravure. La présente invention a également trait à un élément électroluminescent semi-conducteur obtenu au moyen dudit procédé de production d'un élément électroluminescent semi-conducteur et à une et composition photosensible utilisée dans ledit procédé de production d'un élément électroluminescent semi-conducteur. Le procédé de production d'un élément électroluminescent semi-conducteur doté d'une couche de blocage de courant comprend une étape consistant à former un motif qui peut être obtenu à partir de la composition photosensible au moyen du procédé de lithographie et est caractérisé en ce que ledit motif devient la couche de blocage de courant.
PCT/JP2010/073774 2010-01-28 2010-12-28 Procédé de production d'un élément électroluminescent semi-conducteur, élément électroluminescent semi-conducteur et composition photosensible utilisée pour ledit procédé de production d'un élément électroluminescent semi-conducteur Ceased WO2011092994A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302913A (ja) * 1993-04-12 1994-10-28 Nippon Steel Corp 半導体レーザ素子の製造方法
JP2005175199A (ja) * 2003-12-11 2005-06-30 Hitachi Cable Ltd 発光ダイオード
JP2008205008A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd 半導体層間絶縁膜形成用組成物とその製造方法、膜形成方法と半導体装置
JP2009244722A (ja) * 2008-03-31 2009-10-22 Jsr Corp レジスト下層膜用組成物及びその製造方法
JP4392464B2 (ja) * 2008-01-15 2010-01-06 積水化学工業株式会社 レジスト材料及び積層体

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302913A (ja) * 1993-04-12 1994-10-28 Nippon Steel Corp 半導体レーザ素子の製造方法
JP2005175199A (ja) * 2003-12-11 2005-06-30 Hitachi Cable Ltd 発光ダイオード
JP2008205008A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd 半導体層間絶縁膜形成用組成物とその製造方法、膜形成方法と半導体装置
JP4392464B2 (ja) * 2008-01-15 2010-01-06 積水化学工業株式会社 レジスト材料及び積層体
JP2009244722A (ja) * 2008-03-31 2009-10-22 Jsr Corp レジスト下層膜用組成物及びその製造方法

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