TW200936818A - Plating apparatus and plating method - Google Patents
Plating apparatus and plating method Download PDFInfo
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- TW200936818A TW200936818A TW097147071A TW97147071A TW200936818A TW 200936818 A TW200936818 A TW 200936818A TW 097147071 A TW097147071 A TW 097147071A TW 97147071 A TW97147071 A TW 97147071A TW 200936818 A TW200936818 A TW 200936818A
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/008—Current shielding devices
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Automation & Control Theory (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
200936818 六、發明說明: 【發明所屬之技術領域】 本發明係有關用於實施鍍覆物件(基板)(例如,半導體 晶圓片)之表面鍍覆的鍍覆裝置及鍍覆方法,且更特別的是 關於可用於形成鍍膜於設在半導體晶圓片表面之精細互連 凹部或小孔或光阻開口中、或用於在半導體晶圓片表面上 形成用以電氣連接至例如封裝件之電極的凸塊(突出電極) 的鍍覆裝置及鍍覆方法。 ❹【先前技術】 例如 ΙΑβ(捲帶式自動接合)或覆晶封裝(fUp chip: 通承要在半導體晶片(有互連形成於其中)表面的預定部份 (電極)處形成由金、銅、錫或鎳或多層該等金屬製成的突 出里連接電極(凸塊),藉此該半導體晶片可經由該等凸塊 電,連接至封裝件的電極或TAB電極。有各種方法可用來 =凸,’例如電鐘法、氣相沉積法、印製法以及植球法 =7略其中,隨著半導體晶片的1/0數增加及 電極間距變小,最常用的方法 對穩定地完成的電驗。 w精細凸塊以及可相 電二 =:!=度的金屬膜(_。此外, 地控.易 需嚴格要求金屬膜的厚度之面内均勻度(=1金屬膜時, ㈣〇nnity)以便實現高密度封裝、高 電錢法來形成金輕時,可❹賴子^^率。若用 蜀于饋送逮率和鍍液的 320840 4 200936818 % 電位有均勻的分布。因此,㈣電鍍法能夠得到有優異厚 度之面内均勻度的金屬膜。、 在使用所謂浸潰法的鍵覆裝置中,已知有一㈣覆裝 置係包含:用於容納鍍液的鍍槽;用於垂直地保 覆物件)並藉此水密性密封其周邊部份的基板保持器土 ;陽又 極’其係用-陽極保持器被垂直地保持且經配置成是面對 著在該鑛槽中的基板;由電介質材料製成且有一中央孔的 〇調節板(regulation ,其係經配置成位在該陽極與 ,基板之間;以及,配置於該調節板與該基板之間賴掉 名(paddle),用於授拌該鍍液(請參考,例如,國際公開號: 世界專利第W0 2004/009879號小冊子,專利文獻丨)。 二f專利文獻1所述之鍍覆裝置的操作中,陽極、基板 及調即板均沉浸於鍍槽的鍍液中,同時經由導線將該陽極 連接至鍍覆電源的陽極以及將該基板連接至該鍍覆電源的 陰極,並在該陽極與該基板之間施加一預定鍍覆電壓,藉 ©此>儿積金屬並形成金屬膜(鑛膜)於基板表面上。在鍍覆期 間’用配置於調節板、基板之間的擾拌槳擾拌該 錢液以便 均勻地供給足夠數量的離子至基板,藉此可形成厚度更加 均勻的金屬膜。 、β根據專利文獻1的鍍覆裝置,鍍槽的電位分布可用置 陽择、在陽極對面的基板之間且在柱形主體中有鍍液通 ,的調即板來控制。這使得對形成於基板表面之金屬臈的 厚度分布的控制成為有可能。 此外’已有人提出一種鍍覆裝置,其係藉由最小化均 5 320840 200936818 沉浸於鍍槽中之鍍液的調節板及鍍覆物件的距離,從而可 讓鍍覆物件整個表面有更加均句之電位分布,藉此形成有 更加均勻厚度的金屬骐(請參考,例如,日本專利早期公開 公布號:2001-329400,專利文獻2)。 目前,為了增加生產力,人們強烈要求要把用於形 有給定厚度之鍍膜的鍍覆時間縮短到習知鍍覆時間的二八 之二左右。為了在較短的時間内形成有給定厚度及给定^ 覆面積的鍍膜’必須藉由施加較高的電流(亦即,較高=又 ❹流密度)來以較快的鍍覆速率進行鍍覆。不過,如果使用, 知常用鍍覆裝置及其操作方法在高電流密度條件下進行% 覆的話,鍍膜厚度的面内均勻度會有變差的傾向。人們^ 求鍍膜厚度要有比以前更高程度的面内均勻度。因此,如 專利文獻2所述,縮短調節板與鑛覆物件的距離對於在古 電流密度鍍覆條件下進行鑛覆是很重要的。 商 本發明人已發現,當使用習知常用鍍覆裝置及其操4 方法在高電流密度條件下進行鍍覆時,鍍覆所形成的凸夫 會有具有凸形頂部而不是平頂的傾向。形成此種凸項型^ 塊會導致下列問題:就目前還在研發的WL_csp(晶元級盖 片尺寸封裝)而言,在用鍍覆法形成凸塊後,凸塊會被樹) 所塗覆。如果凸塊呈凸頂狀,必須塗上過多量的樹脂以$ 盍整個凸塊,您會增加成本。在塗佈樹脂後,通常用所令 刮板(squeegee)的刮刀來整平樹脂表面。在用刮刀(到板 整平樹脂表面時,有凸頂的高凸塊可能會倒塌。在用樹 塗覆凸塊後’通常也會用機械研磨法把樹脂及凸塊磨到免 320840 6 200936818 定的厚度。如果凸塊有凸頂而因此塗上過量的樹脂,則必 須磨掉多餘的樹脂,這會導致成本增加。 已有人提出一種鍍覆裝置及方法,其係在進行具有通 孔之印刷電路板的鍍覆之同時在鍵液中驅動一對攪拌桿 (一支的速度為5公分/秒至2〇公分/秒,而另一支為25公 仝/衫至70公为/秒)(請參考,例如,日本早期公開公布 號:2006-41172,專利文獻3)。不過,若是在進行鍍覆時 使這對攪拌桿各以該等速度移動的話,仍然無法形成具有 霤平頂的凸塊。 【發明内容】 鑑於上述先前技術的情況,吾等已做成本發明。因此, 本發明的目標是要提供一種鍍覆裝置及鍍覆方法,在進行 鍍覆物件(基板)(例如,半導體晶圓片)的鍍覆時,其係可 形成具有平頂的凸塊或可形成有優良面内均勻度的金屬 膜,即使在高電流密度條件下進行鍍覆亦然。 ❹ 為了達成該目標,本發明提供一種鍍覆裝置,其係包 含·用於容納鍍液的鍍槽;陽極,其係待沉浸於在該鍍槽 内的該鍍液中,保持器,其係用於保持鍍覆物件以及將該 鍍覆物件配置於與該陽極相對向的位置;攪拌槳,其係經 配置在該%極和被該保持器保持著的該鏡覆物件之間,並 且與該鍍覆物件呈平行地往復移動以攪拌該鍍液;以及, 控制部件(control section) ’用於控制用以驅動該擾拌紫 的攪拌槳驅動部件。該控制部件係控制該攪拌槳驅動部件 使得該挽拌槳以平均絕對值為70公分/秒至1〇〇公分/秒的 320840 7 200936818 * 速度移動。 藉由使配置在該陽極與該鍍覆物件之間的擾摔樂例如 以平均絕對值為7〇公分/秒至1〇〇公分/秒的(高)速度來移 動以藉此攪拌該鍍液,可均勻地供給足夠數量的離子至先 前已形成之用於凸塊形成的阻劑孔,這使得有可能形成具 有平頂的凸塊’即使疋在南電流密度條件下進行鍍覆亦然。200936818 VI. Description of the Invention: [Technical Field] The present invention relates to a plating apparatus and a plating method for performing surface plating of a plated article (substrate) (for example, a semiconductor wafer), and more particularly </ RTI> relating to electrodes that can be used to form a coating in a fine interconnect recess or aperture or photoresist opening disposed on a surface of a semiconductor wafer, or for forming an electrode on a surface of a semiconductor wafer for electrical connection to, for example, a package A plating device and a plating method for bumps (protruding electrodes). ❹[Prior Art] For example, ΙΑβ (tape-type automatic bonding) or flip-chip package (fUp chip: formed by a predetermined portion (electrode) on the surface of a semiconductor wafer (with interconnects formed therein) formed of gold and copper , tin or nickel or a plurality of layers of such metal-made protruding electrodes (bumps) whereby the semiconductor wafer can be electrically connected to the electrodes of the package or the TAB electrode via the bumps. Various methods are available = Convex, 'for example, electric clock method, vapor deposition method, printing method, and ball-planting method=7, among them, as the number of semiconductor wafers increases by 1/0 and the electrode pitch becomes smaller, the most common method is to stably perform electricity. Inspection. w fine bumps and metal films that can be phase-electricized ==!==. In addition, ground control. Easy to meet the in-plane uniformity of the thickness of the metal film (=1 metal film, (4) 〇nnity In order to achieve high-density packaging and high-power method to form gold light, it can be used to reduce the potential. If used to feed the catch rate and the plating solution, 320840 4 200936818% potential is evenly distributed. Therefore, (4) plating method A metal with excellent in-plane uniformity of thickness can be obtained In the keying device using the so-called impregnation method, it is known that a (four) coating device comprises: a plating tank for accommodating a plating solution; for vertically covering an object) and thereby sealing the peripheral portion thereof by watertightness Substrate holder soil; the anode and the pole's - the anode holder is vertically held and configured to face the substrate in the ore; the crucible adjustment plate made of dielectric material and having a central hole (regulation, which is disposed between the anode and the substrate; and a paddle disposed between the conditioning plate and the substrate for mixing the plating solution (please refer, for example, International Publication No.: World Patent No. WO 2004/009879 pamphlet, patent document 丨). In the operation of the plating apparatus described in Patent Document 1, the anode, the substrate, and the adjustment plate are all immersed in the plating bath of the plating tank. Simultaneously connecting the anode to the anode of the plating power source via a wire and connecting the substrate to the cathode of the plating power source, and applying a predetermined plating voltage between the anode and the substrate, Metal and metal film (mine On the surface of the substrate. During the plating, the liquid is mixed with the scramble pad disposed between the adjustment plate and the substrate to uniformly supply a sufficient amount of ions to the substrate, thereby forming a metal film having a more uniform thickness. According to the plating apparatus of Patent Document 1, the potential distribution of the plating tank can be controlled by placing the anode between the substrates opposite to the anode and the plating liquid in the cylindrical body. The control of the thickness distribution of the metal ruthenium formed on the surface of the substrate becomes possible. Furthermore, a plating apparatus has been proposed which is an adjustment plate and plating which minimizes the plating solution immersed in the plating tank by 5 320840 200936818 The distance of the object, so that the entire surface of the plated article has a more uniform potential distribution, thereby forming a metal crucible having a more uniform thickness (refer to, for example, Japanese Patent Laid-Open Publication No. 2001-329400, Patent Document 2) ). At present, in order to increase productivity, it is strongly required to shorten the plating time for a coating having a given thickness to about two-eighth of the conventional plating time. In order to form a coating having a given thickness and a given area in a relatively short period of time, it must be plated at a faster plating rate by applying a higher current (i.e., higher = turbulent density). cover. However, if it is used, it is known that the usual plating apparatus and its operation method are covered by a high current density, and the in-plane uniformity of the coating thickness tends to be deteriorated. People ^ need to have a higher degree of in-plane uniformity than before. Therefore, as described in Patent Document 2, shortening the distance between the regulating plate and the ore covering member is important for performing the ore coating under the ancient current density plating condition. The present inventors have discovered that when plating is performed under high current density conditions using conventional conventional plating apparatus and its method 4, the convexity formed by plating has a tendency to have a convex top rather than a flat top. . The formation of such a convex type of block causes the following problems: in the case of the WL_csp (a wafer-level cover-size package) currently under development, after the bump is formed by the plating method, the bump is coated by the tree) cover. If the bumps are convex, you must apply an excessive amount of resin to the entire bump to increase the cost. After the resin is applied, the squeegee blade is usually used to level the surface of the resin. When using a scraper (the high bump with a convex top may collapse when the plate is flattened to the surface of the resin. After the bump is coated with a tree), the resin and the bump are usually ground by mechanical grinding to avoid 320840 6 200936818 If the bump has a convex top and thus an excessive amount of resin is applied, the excess resin must be worn away, which leads to an increase in cost. A plating apparatus and method have been proposed which are used for printing with through holes. The board is plated while driving a pair of stirring rods in the key solution (one speed is 5 cm/sec to 2 cm/s, and the other is 25 mm/shirt to 70 mm/sec) (Please refer to, for example, Japanese Laid-Open Publication No. 2006-41172, Patent Document 3). However, if the pair of stirring rods are moved at these speeds during plating, it is still impossible to form a flat top. SUMMARY OF THE INVENTION In view of the above prior art, we have made cost inventions. Therefore, it is an object of the present invention to provide a plating apparatus and a plating method for performing a plating object (substrate) (for example, Semiconductor wafer In the case of plating, it is possible to form a bump having a flat top or a metal film which can be formed with excellent in-plane uniformity even under high current density conditions. ❹ In order to achieve the object, the present invention provides A plating apparatus comprising: a plating tank for accommodating a plating solution; an anode to be immersed in the plating solution in the plating tank, a holder for holding the plating object and the The plated article is disposed at a position opposite to the anode; the paddle is disposed between the % pole and the mirror object held by the holder, and reciprocates parallel to the plated object To agitate the plating solution; and, a control section 'for controlling a stirring paddle driving part for driving the scrambled purple. The control part controls the paddle driving part so that the paddle is averaged 320840 7 200936818 * speed shift from 70 cm / sec to 1 〇〇 cm / sec. By making the interference between the anode and the plated object, for example, the average absolute value is 7 〇 cm / sec to 1〇〇cm/sec The (high) speed is moved to thereby agitate the plating solution, and a sufficient amount of ions can be uniformly supplied to the previously formed resist hole for bump formation, which makes it possible to form a bump having a flat top even It is also possible to carry out plating under conditions of southern current density.
φ 該授拌槳最好為具有數個條形部份的板狀構件。該板 狀構件以具有3笔米至5毫米的厚度為較佳。 該擾拌紫之每-條形部份較宜為相對於平行於該鏡覆 物件的垂直平面傾斜30度至60度,以4〇度至5〇度更佳。φ The mixing paddle is preferably a plate-like member having a plurality of strip portions. The plate member preferably has a thickness of 3 to 5 mm. Preferably, each of the strips of the scrambled violet is inclined at 30 to 60 degrees with respect to a vertical plane parallel to the mirror covering, preferably 4 to 5 degrees.
該撲拌紫之每一條形部份以I右 9袁 切从具有2亳米至8毫米的寬 度為較佳,以3毫米至6毫米更佳。 較佳地,該授拌紫與該鑛覆物件的距離為5毫米至U 毫米 在本發明之-較佳方面巾,軸覆裝 配 之:且由電介質材料製成的調:板。該 == 鍍覆物件之輪廓的柱形部份;以 及連接至餘形部份之陽極料_(anQde_side perlpheralend)的凸緣部份,用於調 鍍覆物件之間的電場。 珉㈣陽極與每 在該陽極與該游狀間設有m 整個表面有更加均勻之電位分布 ,了讓鑛覆物件的 鐘覆物件上之金屬膜(錄膜)的面内均^提兩形狀該 流密度鍍覆條件下形成該金屬膜亦然^即使疋在同電 320840 8 200936818 該鍍覆物件與該調節板之該柱 =距離以8毫米至25毫米為較佳,以12毫米= 更佳。 在本發明之-較佳方面中,該保持器具有向外突出的 保持窃臂部(holder arm),以及該錢槽具有保持器支芊 (header s_㈣,用於與該保持器臂部接觸㈣掛及支 承該保持器於其上。在該保持器臂部與該保持器支架的接 ❹ 觸區域巾設有蚊構件,絲將該轉器臂部目定於該保 持器支架。 ’ 藉此結構,可防止被懸掛及支承於該鍍槽上的保持器 搖擺或傾斜’即使該保持器承受因該攪拌槳之高速移動而 引起之鍍液流動的反向壓力亦然。 較佳地’該固疋構件為裝設於該保持器臂部與該保持 器支架中之至少一者的磁石。使用磁力可確保優良的固定^ 在本發明之一較佳方面中,該保持器臂部與該保持器 支架至少在彼等之接觸區的一部份中具有在該保持器被懸 掛及支承於該鍍槽上時會相互接觸及閉合的接點,而在該 等接點閉合時允許供電至該鍍覆物件。 在該保持器被懸掛及支承於該鍍槽上時,這可確保該 保持器臂部的接點與該保持器支架的接點之間有優良的接 緒0 ’ 本發明也提供一種鑛覆方法’其係包含:在鏡槽的鑛 液中彼此相對地配置陽極與鍍覆物件;以及,使配置於該 陽極與該鍍覆物件之間的攪拌槳以與該鍍覆物件平行之方 9 320840 200936818 式以平均絕對值為70公分 動,同時在該陽極與誃 a为/秒的速度往復移 該攪拌槳最好為具‘件之間施加-電壓。 狀構件以具有3毫_ $ 條形部份的板狀構件。該板 該咖丄二 厚度為較佳。 物件的垂直平面傾斜3()声”較且為相對於平行於該鐘覆 該攪拌举之备一攸又至6〇度’以40度至50度更佳。 現讦杀之母—條形部份 ❹ 度為較佳,以3毫米至毛未至8毫米的寬 土 毫米更佳0 較佳地,該攪拌槳鱼Each of the strip-shaped portions of the blended purple is preferably from 2 mm to 8 mm in width, preferably from 3 mm to 6 mm. Preferably, the distance between the hybrid violet and the mineral-coated article is from 5 mm to U mm. In the preferred embodiment of the invention, the shaft is coated with: a plate made of a dielectric material. The == the cylindrical portion of the profile of the plated article; and the flange portion of the anode material _ (anQde_side perlpheralend) connected to the die portion for adjusting the electric field between the plated articles.珉 (4) The anode has a more uniform potential distribution with the entire surface of the anode and the wrap, and the metal film (recording film) on the object of the ore covering object is lifted into two shapes. The metal film is formed under the flow density plating condition, even if it is in the same electric power 320840 8 200936818, the column of the plating object and the adjusting plate is preferably 8 mm to 25 mm, and 12 mm = more good. In a preferred aspect of the invention, the retainer has an outwardly projecting retainer arm and the money slot has a retainer support (header s_(4) for contacting the retainer arm (4) The holder is hung and supported thereon. A mosquito member is disposed on the contact portion of the holder arm and the holder bracket, and the wire is used to define the holder arm to the holder holder. The structure prevents the retainer suspended and supported on the plating tank from swinging or tilting, even if the retainer is subjected to a reverse pressure caused by the high-speed movement of the stirring paddle. The solid structure member is a magnet mounted on at least one of the holder arm portion and the holder bracket. The magnetic force ensures excellent fixation. In a preferred aspect of the invention, the holder arm portion and the holder The retainer brackets have contacts that contact and close each other when at least a portion of their contact areas are engaged and supported on the plating tank, and allow power to be supplied when the contacts are closed The plated article. The holder is suspended When hanging and supporting on the plating tank, this ensures an excellent connection between the joint of the retainer arm and the joint of the retainer bracket. The present invention also provides a method of mineral coating. Arranging the anode and the plated article opposite to each other in the ore bath of the mirror slot; and arranging the agitating paddle disposed between the anode and the plated article to be parallel to the plated article 9 320840 200936818 The absolute value is 70 cm, and the agitating paddle is reciprocated at a speed of the anode and 誃a / sec. Preferably, the pad is applied with a voltage between the members. The member has a plate having a strip of 3 milligrams. The thickness of the plate is preferably 2. The vertical plane of the object is inclined by 3 () sound" and is 40 degrees relative to the parallel to the clock. It is better to 50 degrees. The mother of the slaughter is preferably a strip-shaped portion, preferably 3 mm to a width of 3 mm to 8 mm. Preferably, the stirring paddle is preferred.
毫米。 >、,、該鍍覆物件的距離為5毫米至U 在本發明之一較佳 板==: 之:::::::::部份;以及連接至該柱形部份 鑛覆物件之間的―電場:",用於調節形成於該陽極與該 部的節毫=柱形部份之鍵覆物件側端 更佳。 宅十至25毫未為較佳,以12毫米至18毫米 本發明也提供-種鍍覆n其係包含:用於容納锻 4的,槽’陽極’其係待沉浸於在該鑛槽内的該鏡液中; =持,,其係用於保持鍍覆物件以及將該鍍覆物件配置於 二該陽極相對向的位置;鮮_ ’其係經配置在該陽極和 子該保持保持著的雜覆物件之間,並且與該鍵覆物件 呈平行地往復移動以攪拌該鍍液;以及,控制部件,其係 10 320840 200936818 用於控制用以驅動該攪拌槳的攪拌槳驅動部件。該鍍槽是 藉由具有許多鑛液通行孔的分離板(separati〇n plate)分 隔成鍍覆物件處理室與鍍液分佈室。該鍍液分佈室設有屏 蔽板(shield plate),用於調節電場同時確保該鍍液之分 散式流動。 藉由以此方式用該分離板來把該鍍槽分隔成該上部鍍 覆物件處理室與該下部鍍液分佈室,以及在該鍍液分佈室 裝设該屏蔽板以抑制在該錢液分佈室中形成由該陽極朝向 鍍覆物件的電場,如此即可防止在該鍍覆物件下方形成電 場,從而可防止電場影響鍍膜的面内均勻度。當在習知低 電流密度條件下進行鍍覆時,在賴物件下方形成的電場 對於鍍膜之面内均勻度的影響不會成問題。另一方面,在 高電流密度條件的情形下,此—電場的影響會造成問題, =是因為鍍膜之減㈣底部的部份之厚度會快速增加之 ㈣ίί發明之一較佳方面中,該鍍覆敦置更包含配曼在 _極與該__之間且由電介質材料製成 調節板包含:内徑配合該鍍覆物件之 ^卽板。該 =連接至該柱形部份之陽極料周端的凸緣部=部份;, 即形成於該陽極與該鍍覆物件之間的’习’用於調 的間隙 觸的,場屏蔽構件係附接於該凸緣部份的下端該分離板接 提供該調節板可控制形成於該二 :場’此外,提供該電場屏蔽構件於該= 物件之間的 板之間可防止電場從該凸緣部份與該::與該分離 32〇84〇 11 200936818 、在本發明之-較佳方面中,該鑛液分佈室被該屏蔽板 /刀隔成陽極侧溶液分佈室與陰極侧溶液分佈室。該鍵液係 ,過鑛液供給路線供給至該陽極側溶液分佈轉=極側 溶液分佈室。_ 藉由以此方式⑽賴板把該鍍液分佈室完全 2陽極侧溶液分佈室與該陰極側溶液分佈室,這使得能可 ^防止由觸極產生的餘線穿過在频液分佈室中的 又液以及到達作為陰極的鍍覆物件。 攪拌由該聯結器輕易地將該攪拌紫與由該 能夠快速转地操作㈣桿分離。這賴簡拌槳的更換 Ο 液的=供:!!:在其係包含:用於容納鍍 保掊 /、係待几次於在該鍍槽内的該鍍液中; 與該陽極相鍍覆物件以及將該鍍覆物件配置於 被該保持器保持著上=紫,錢經配置在該陽極和 呈平行地覆件之間’並且與該鍵覆物件 制用以驅動液;控制部件,其係用於控 該授拌樂之間且由電==件::置在該陽極與 板移動機構,1係用於二:枓製成的調喊’·以及,調節 平行地移動該調節板與該錢覆物件平行之方式垂直或 320840 12 200936818 al 該調節板移動機構可微調該調節板相對於鍍覆物件的 垂直或水平位置,藉此可提高形成於鍍覆物件表面之鍍膜 的厚度之面内均勻度。由於該調節板是配置在靠近鍍覆物 件的位置,微調該調節板相對於該鍍覆物件的垂直或水平 位置對於提高形成於鍍覆物件上之鍍膜的厚度之面内均勻 度是很重要的。 較佳地,該調節板移動機構包含壓入構件(press member),甩於對該調節板施壓以使該調節板移動。 ❹ 例如,該壓入構件為壓入螺栓(press bolt)。可藉由 控制由該壓入構件所施壓的程度(特別是,當具有預定螺距 的壓入螺栓被用作壓入構件時,藉由控制壓入螺栓的迴轉 數),而輕易控制該調節板的移動距離。 較佳地,在該鍍槽的内周面上設有導引構件,用來引 導該調節板的移動。 該導引構件係使該調節板能夠與鑛覆物件呈平行地移 ❹動,同時保持兩者之間的距離不變。此外,藉由使用具有 可,該調節板之周圍部份插入之凹槽的導引構件,可防止 電場由該調節板的周邊洩露出。 較佳地,該調節板設有安裝部件(m〇untingMillimeter. >,, the distance of the plated article is 5 mm to U in a preferred plate ==:::::::::: portion of the invention; and connecting to the cylindrical portion of the ore cover The "electric field:" between the objects is preferably used to adjust the side of the key member formed on the anode and the portion of the column. House ten to 25 millimeters is not preferred, and 12 to 18 millimeters of the present invention are also provided - a type of plating comprising: a groove 'anode' for accommodating the forged 4, which is to be immersed in the ore tank In the mirror liquid; = holding, which is used to hold the plated article and the plated article is disposed at two opposite positions of the anode; fresh _ ' is configured to remain in the anode and the sub Between the covering members, and reciprocating in parallel with the key covering member to agitate the plating solution; and, a control member, 10 320840 200936818 for controlling the stirring paddle driving member for driving the stirring paddle. The plating tank is separated into a plating material processing chamber and a plating liquid distribution chamber by a separation plate having a plurality of mineral liquid passage holes. The plating solution distribution chamber is provided with a shield plate for adjusting the electric field while ensuring the dispersed flow of the plating solution. By separating the plating tank into the upper plating material processing chamber and the lower plating liquid distribution chamber by using the separating plate in this manner, and installing the shielding plate in the plating liquid distribution chamber to suppress the distribution of the money liquid An electric field from the anode toward the plated article is formed in the chamber, thereby preventing an electric field from being formed under the plated article, thereby preventing the electric field from affecting the in-plane uniformity of the coating. When plating is carried out under conventional low current density conditions, the effect of the electric field formed under the article on the in-plane uniformity of the coating is not a problem. On the other hand, in the case of high current density conditions, this - the influence of the electric field causes problems, = because the thickness of the portion of the bottom portion of the coating (4) is rapidly increased. (4) In one of the preferred aspects of the invention, the plating The overhanging device further comprises a matching plate made of a dielectric material between the _ pole and the __, and the adjusting plate comprises: an inner diameter matching the plate of the plated object. The flange portion is connected to the peripheral end of the anode portion of the cylindrical portion; that is, the gap between the anode and the plated article is used for adjusting the gap contact, and the field shielding member is Attached to the lower end of the flange portion, the separating plate is connected to provide the adjusting plate to be controlled to be formed on the two: field. Further, the electric field shielding member is provided between the plates between the objects to prevent an electric field from being convex. The edge portion and the:: and the separation 32〇84〇11 200936818, in a preferred aspect of the invention, the mineral liquid distribution chamber is partitioned by the shielding plate/knife into an anode side solution distribution chamber and a cathode side solution distribution room. The key liquid system and the ore supply route are supplied to the anode side solution distribution turn to the pole side solution distribution chamber. _ By this method (10), the plating solution distribution chamber is completely 2 anode side solution distribution chamber and the cathode side solution distribution chamber, which makes it possible to prevent the remaining line generated by the electrode from passing through the frequency distribution chamber. The liquid in the tank and the plated object as the cathode. Stirring is easily separated by the coupler from the stirring of the (four) rod by which it can be quickly rotated. The replacement of the sputum is: for::!: in the system: for accommodating the plating 掊 /, waiting for several times in the plating bath in the plating tank; plating with the anode And the covering member is disposed to be held by the holder=purple, and the money is disposed between the anode and the parallel covering member and is configured to drive the liquid with the bonding member; the control component, It is used to control the between the mixers and is controlled by the electric==piece:: the anode and the plate moving mechanism, the 1 system is used for the second: the squeaking of the squatting '· and, the adjustment moves the adjustment in parallel The plate is perpendicular to the money covering member or 320840 12 200936818 a The adjusting plate moving mechanism can finely adjust the vertical or horizontal position of the adjusting plate relative to the plated article, thereby increasing the thickness of the coating formed on the surface of the plated article Uniformity in the plane. Since the adjustment plate is disposed adjacent to the plated article, fine-tuning the vertical or horizontal position of the adjustment plate relative to the plated article is important to increase the in-plane uniformity of the thickness of the coating formed on the plated article. . Preferably, the adjustment plate moving mechanism includes a press member for pressing the adjustment plate to move the adjustment plate. ❹ For example, the press-in member is a press bolt. The adjustment can be easily controlled by controlling the degree of pressure applied by the press-in member (in particular, when the press-in bolt having a predetermined pitch is used as the press-in member, by controlling the number of revolutions of the press-in bolt) The moving distance of the board. Preferably, a guide member is provided on the inner peripheral surface of the plating tank for guiding the movement of the regulating plate. The guiding member enables the adjustment plate to be moved in parallel with the ore-covering member while maintaining the distance between the two. Further, by using a guiding member having a groove into which the peripheral portion of the regulating plate is inserted, it is possible to prevent an electric field from leaking from the periphery of the regulating plate. Preferably, the adjustment plate is provided with a mounting component (m〇unting
SeCtl〇=用以絲用於調節電場的輔助調節板。 ,調即板與該辅助調節板的組合係能夠針對鑛覆物件 的^形ί最佳電場,而不用改變該調節板的安裝位置或 更換該5周節板。 本發明之-較佳方面中,該鍍覆裝置更包含定位/ 320840 13 200936818 保持部件(P〇sitioning/h〇1 e 持該保持器、該調節板以及保用於定位及保 藉由在特诚由— 的陽極保持器。 籍由在該鍍槽中设定用以保持該基板 板及該陽極保持器的定位/保持部件於定位,可使== 持器、該調節板及該陽極保持器位样 方向中輕易地對齊。 u位置在鍍槽的垂直 m㈣的賴裝置讀法,錢賴覆 ® 的鍍覆時,可軸具有平頂 ==有優良面内均勾度的金屬膜,即使在高電流密 度條件下進行鑛覆時亦然。 【實施方式】 現在將用附圖描述本發明的較佳具體實施例。以下描 述係說明以基板為鑛覆物件實施鐘銅於其表面的情形。在 以下說明中,相同或等價的元件都用相同的元件符號表示 且不再重覆說明。 ❹、第1圖為本發明鑛覆襞置之—具體實施例的垂直剖面 正視圖。如第1圖所示,該錢覆裝置包含容納鍍液Q於其 中的鍵槽10。在鍍槽1〇的上端四周設有用於承接溢出鍍 槽10邊緣之鍍液Q的溢流槽(〇verfl〇w tank)12。設有栗 Η之鍍液供給路、線16的一端係連接至溢流槽12的底部, ㈣:^^線16的另__端係連接至設在賴1()底部的 鍍液供給人σ 18。溢流槽丨2内的鍍液Q係藉由泵14之驅 使而被送回到鍍槽10。在泵14之下游,將用於控制鍍液Q 之溫度的恆溫單元2〇與用於壚出内含於鍍液之外來物質 14 320840 200936818 的過濾器22安插於鍍液供給路線16中。 該鍍覆裝置也包含:基板保持器24,用以可拆卸地固 持基板(鍍覆物件)W以及將基板垂直位置沉浸於鍍槽 10的鍍液Q中。用陽極保持器28固持以及沉浸於鍍槽1〇 之鍍液Q中的陽極26係經配置成是在用基板保持器24固 持且沉浸於鍍液Q中的基板w之對面。在此具體實施例中, 含磷銅用來作為陽極26。基板W與陽極26係經由鍍覆電 ❹源30來電氣連接,並藉由使電流在基板w、陽極26之間 流通而在基板W表面上形成鍍膜(銅膜)。 與基板W表面呈平行地往復移動以攪拌鍍液Q的攪拌 槳32係經配置成是在用基板保持器24固定以及浸入鍍液 Q中的基板W與陽極26之間。藉由用攪拌槳32攪拌鍍液q, 可均勻地供給足夠數量的銅離子至基板w表面。攪拌槳32 與基板W的距離較佳為5毫米至11毫米。此外,使得基板 W整個表面上有更加均勻的電位分布之由電介質材料製成 ❿的調節板(regulation plate)34係經配置成位在攪拌槳32 與陽極26之間。 如第2圖及第3圖所示,攪拌槳32係由矩形板狀構件 構成’其具有3毫米至5毫米之均勻厚度“t” ,以及有多 個界定垂直延伸條狀部份32b的平行狹縫32a。授拌紫32 係由例如有鐵弗龍塗層的鈦形成。攪拌槳32的垂直長度 Li與狹縫32a的垂直長度L2均充分地大於基板W的垂直尺 寸。此外,攪拌槳32係經設計成使得它的橫向長度η與往 復距離(行程“St”)的總和是充分地大於基板#的橫向尺 320840 15 200936818 寸。 最好用以下方式決定狹縫32a的寬度及 ==具有必要剛性之範圍_^ 液可㈣形部份咖可有效地擾拌鍍液,以及該錢 縫32a。窄化咖32之條形部請 Ο 了錄㈣32在接近其往復移動的末 、(灯程末做暫時停止而減速時減少在基板w上形成 的電場陰影(不被電場影響或很小的斑點)。 在此具體實施例中,如第3圖所示,狹縫32a係經垂 地形成,致使每個條形部份32b的橫截面為矩形。每個 條形部份伽的寬度“B”較宜為2毫米至8毫米,以3毫 米至6笔米更佳。如第4A圖所示,每個條形部份犯匕的橫 戴面之4個角可經倒角。或者是,如第4β圖所示,每個條 形部份娜的橫截面可呈平行四邊形使得其相對於和基板 W平打之垂直平面傾斜一預定角度Θ。條形部份挪對於 和基板w平行之垂直平面的傾斜角0較宜為於3『至 60 ’以40 S 50更佳。藉此結構’可增強授摔紫32麟 錢液的效果。 授拌樂32的厚度(板厚)“t,’較宜為3毫米至5毫 米此,、體貫施例是4亳米,藉此可將調節板%配置於基 板謂近。已經確認的是,如果攪拌樂32的厚度(板厚) “t”為1毫米或2毫米,則響藥%沒有足夠的強度。 藉由使獅樂32有均勻的厚度,可防讀液麟或有大波 浪。 320840 200936818 第5圖圖不攪拌槳32的驅動機構與鍍槽1〇。攪拌槳 32係用固定於擾拌_ 32上端的夾子%固定於水平延伸轴 桿38。軸桿38用軸桿保持器4〇固定且可水平滑動。軸桿 38的末端係耦合至用於使攪拌槳32線性及水平地往復移 動的授拌禁驅動部件42。攪拌樂驅動部件42用曲柄機構 (未圖不)將馬達44的旋轉轉換成軸桿38的線性往復移 動。在此具體實施例中,設有一控制部件46,其係藉由控 ❿制攪拌槳驅動部件42的馬達44轉速來控制攪拌槳32的移 動速度。也可使用藉助滾珠螺桿來把伺服馬達的旋轉轉換 成軸桿之線性往復移動的攪拌槳驅動部件,或用線性馬達 使得軸桿線性往復移動的攪拌槳驅動部件以取代使用曲柄 機構的攪拌槳驅動部件42。 在此具體實施例中,如第6圖所示,攪拌槳32的往復 行程St係使得位於一行程末端的攪拌槳32之條形部 份32b不會與位於另一行程末端的攪拌槳犯條形部份32b © 重疊。此可減少授拌槳32對於電場陰影在基板f上的形成 的影響。 、 在此具體實施例中,搜拌槳32是以高於習知授拌槳的 速度往復移動,尤其是以平均絕對值為7〇公分/秒至1〇〇 =分/秒的速度移動。這是基於本發明人的以下實驗發現: 當以8ASD(安培/平方分米^/如2))的電流密度(高於5ASD 的習知電流密度)進行用於形成凸塊的鍍膜時,可藉由利用 攪拌槳(其以高於習知攪拌槳的速度移動)攪拌鍍液而形成 具有平頂的凸塊,尤其是以平均絕對值為7〇公分/秒至100 17 320840 200936818 公分/秒的速度移動。在此I體 馬達Μ的旋轉移動轉換成&歹的/用曲柄機構把 上述;以及馬達Μ轉一圈 、=生:多動’如 程I做一次往復移動。在此分的行 以250 rpm旋轉時,可形成最佳的㈣中,虽馬達44 之移動速度的最佳平均絕對值為分因此,_紫32 ο ㈣由柱形部份5:與 二質材料的聚氣乙缔製成。調節板3 =且::電 =:部份5。的前端是配置在基板側 分限制電場的變寬。在此 =]、及轴向長度可充 可阻52在鍍槽1G中係經配置成使並 :斷形成於陽極26與基板w之間 =其 25亳未為較佳,12毫米至18毫米更佳。 «毫未至 儘管在本具體實施例的調節板%中 凸緣部份52是附接於柱形部份5〇的末端,貪第圖所示, 極延長柱形部份50使得柱形部份50的部份5、〇 2向陽 份52的陽極側表面突出,如第8圖所示。3凸緣部 如们圖所示’基板?是用基板保持器^固定。爲 二^,2 4係經設計成能夠供電至基板W +具有表面導ΐ膜 ',濺鍍銅膜)的周圍區域。基板保持器24有多個電接 點(contact) ’而這些電接點的總寬度不小於可與電接點接 18 320840 200936818 周圍區域的周長之_。該等電接點係以等距均 to5 例中,基板保因此在此具體實施 這會护致門$ 7 接又來自鍍液之流動的反向壓力。 ο ^ ° ^ 的面内均勻度有不利影響。刀布不均勻’從而對於錢膜 所示,#基板保制24被設置於 時疋用被輸送震置(未圖示)抓牢 w "支::的在:送裝置上’然後利用向;突出心^ 上的保持器支64而懸掛及支承於固定在鑛槽1〇 第1G _放大透視圖係圖示保持器臂部以及 ❿SeCtl〇 = auxiliary adjustment plate for wire adjustment of the electric field. The combination of the adjustment plate and the auxiliary adjustment plate can be adapted to the optimal electric field of the ore-covering object without changing the installation position of the adjustment plate or replacing the 5-week plate. In a preferred aspect of the present invention, the plating apparatus further includes a positioning/320840 13 200936818 holding member (P〇sitioning/h〇1 e holding the holder, the adjusting plate, and for positioning and securing An anode holder is provided by positioning the positioning/holding member for holding the substrate board and the anode holder in the plating tank, so that the == holder, the adjustment plate, and the anode can be held The position is easily aligned in the orientation of the device. The position of the u is in the vertical m (four) of the plating tank. When the coating is applied, the shaft has a flat top == a metal film with excellent in-plane hooking. The preferred embodiment of the present invention will now be described with reference to the accompanying drawings. The following description illustrates the implementation of the copper on the surface of the substrate by using the substrate as a mineral coated article. In the following description, the same or equivalent elements are denoted by the same element symbols and will not be repeated. ❹, Fig. 1 is a vertical cross-sectional front view of a present embodiment of the present invention. As shown in Figure 1, the money cover device The keyway 10 is provided with a plating solution Q. An overflow tank 12 for receiving the plating solution Q overflowing the edge of the plating tank 10 is provided around the upper end of the plating tank 1〇. One end of the plating liquid supply path and the line 16 is connected to the bottom of the overflow tank 12, and (4): the other end of the line 16 is connected to the plating liquid supplier σ 18 provided at the bottom of the lag 1 (). The plating solution Q in the tank 2 is sent back to the plating tank 10 by the pump 14. Below the pump 14, the thermostat unit 2 for controlling the temperature of the plating solution Q is used for the extraction. The filter 22 containing the material other than the plating solution 14 320840 200936818 is inserted in the plating liquid supply route 16. The plating apparatus also includes a substrate holder 24 for detachably holding the substrate (plating object) W and The vertical position of the substrate is immersed in the plating solution Q of the plating tank 10. The anode 26 held by the anode holder 28 and immersed in the plating bath Q of the plating tank 1 is configured to be held by the substrate holder 24 and immersed in The opposite side of the substrate w in the plating solution Q. In this embodiment, phosphorus-containing copper is used as the anode 26. The substrate W and the anode 26 are plated. The electric power source 30 is electrically connected, and a plating film (copper film) is formed on the surface of the substrate W by circulating a current between the substrate w and the anode 26. The reciprocating movement in parallel with the surface of the substrate W to agitate the plating solution Q The agitating paddle 32 is disposed between the substrate W and the anode 26 which are fixed by the substrate holder 24 and immersed in the plating solution Q. By stirring the plating solution q with the stirring paddle 32, a sufficient amount of copper ions can be uniformly supplied. To the surface of the substrate w. The distance between the stirring paddle 32 and the substrate W is preferably from 5 mm to 11 mm. Further, a regulation plate made of a dielectric material having a more uniform potential distribution on the entire surface of the substrate W is provided. The 34 series is configured to be positioned between the paddle 32 and the anode 26. As shown in Figs. 2 and 3, the agitating paddle 32 is composed of a rectangular plate-like member having a uniform thickness "t" of 3 mm to 5 mm and a plurality of parallels defining a vertically extending strip portion 32b. Slit 32a. The hybrid violet 32 is formed of, for example, titanium coated with Teflon. The vertical length Li of the paddle 32 and the vertical length L2 of the slit 32a are both sufficiently larger than the vertical dimension of the substrate W. Further, the agitating paddle 32 is designed such that its sum of the lateral length η and the reciprocating distance (stroke "St") is sufficiently larger than the lateral rule of the substrate # 320840 15 200936818 inches. It is preferable to determine the width of the slit 32a and the range of the necessary rigidity in the following manner. The liquid (4)-shaped portion can effectively disturb the plating solution, and the money slit 32a. The strip of the narrow coffee 32 is recorded. (4) 32 is close to the end of its reciprocating movement. (When the end of the lamp is temporarily stopped and decelerated, the electric field shadow formed on the substrate w is reduced (not affected by the electric field or small spots). In this embodiment, as shown in Fig. 3, the slits 32a are formed vertically so that each strip portion 32b has a rectangular cross section. The width of each strip portion is "B" Preferably, it is 2 mm to 8 mm, preferably 3 mm to 6 mm. As shown in Fig. 4A, the four corners of each strip-shaped cross-face can be chamfered. As shown in the 4th figure, the cross section of each strip portion may be in the form of a parallelogram such that it is inclined by a predetermined angle 相对 with respect to a plane perpendicular to the plane of the substrate W. The strip portion is parallel to the substrate w. The inclination angle 0 of the vertical plane is preferably 3" to 60' with 40 S 50. This structure can enhance the effect of the drop of purple 32. The thickness of the mixer 32 (thickness) "t , 'It is better to be 3 mm to 5 mm, and the physical example is 4 mm, so that the adjustment plate % can be placed on the substrate. It is recognized that if the thickness (plate thickness) "t" of the mixing music 32 is 1 mm or 2 mm, the drug % does not have sufficient strength. By making the lion 32 have a uniform thickness, it is possible to prevent the liquid collar or 320840 200936818 Fig. 5 is a diagram showing the driving mechanism of the stirring paddle 32 and the plating tank 1 . The stirring paddle 32 is fixed to the horizontally extending shaft 38 by a clip % fixed to the upper end of the scrambler _ 32. The shaft holder 4 is fixed and horizontally slidable. The end of the shaft 38 is coupled to a stirring drive member 42 for linearly and horizontally reciprocating the stirring paddle 32. The stirring music driving member 42 is provided with a crank mechanism (not The rotation of the motor 44 is converted into a linear reciprocating movement of the shaft 38. In this embodiment, a control member 46 is provided which controls the agitation by controlling the rotational speed of the motor 44 of the agitating paddle drive member 42. The moving speed of the paddle 32. It is also possible to use a paddle drive member that converts the rotation of the servo motor into a linear reciprocating movement of the shaft by means of a ball screw, or a paddle drive member that linearly reciprocates the shaft with a linear motor instead of using song The paddle drive member 42 of the shank mechanism. In this embodiment, as shown in Fig. 6, the reciprocating stroke St of the paddle 32 is such that the strip portion 32b of the paddle 32 at the end of one stroke is not located At the end of the other stroke, the agitating blade portion 32b © overlaps. This reduces the influence of the mixing paddle 32 on the formation of the electric field shadow on the substrate f. In this embodiment, the search paddle 32 is high. It is known to reciprocate the speed of the mixing paddle, especially at a speed of an average absolute value of 7 〇 cm/sec to 1 〇〇 = min/sec. This is based on the following experimental findings of the inventors: When using 8ASD ( The current density (amplitude current density higher than 5 ASD) of ampere/square decimeter ^/2)) can be used to form a bump coating, by using a stirring paddle (which is higher than the conventional paddle) Speed shifting) The bath is agitated to form a bump with a flat top, especially at an average absolute value of 7 〇 cm/sec to 100 17 320840 200936818 cm/sec. In this case, the rotational movement of the motor Μ is converted into & / / with a crank mechanism to make the above; and the motor is rotated one turn, = raw: hyperactive ', I make a reciprocating movement. When the row of this minute is rotated at 250 rpm, it can be formed into the best (four), although the optimum average absolute value of the moving speed of the motor 44 is, therefore, _ purple 32 ο (iv) by the cylindrical portion 5: and the second The material is made of polyethylene. Adjustment board 3 = and :: electricity =: part 5. The front end is arranged on the substrate side to limit the widening of the electric field. Here, the ==, and the axial length chargeable resistor 52 are configured in the plating tank 1G so as to be formed between the anode 26 and the substrate w = 25 亳 is not preferred, 12 mm to 18 mm. Better. «In the past, in the adjustment plate % of the present embodiment, the flange portion 52 is attached to the end of the cylindrical portion 5〇, as shown in the figure, the extremely elongated cylindrical portion 50 makes the cylindrical portion Part 5 of the portion 50, 〇2 protrudes toward the anode side surface of the positive portion 52, as shown in Fig. 8. 3Flange parts As shown in the figure, 'substrate? It is fixed with the substrate holder ^. The two ^, 2 4 series are designed to be able to supply power to the substrate W + with a surface conduction film ', sputtered copper film) around the area. The substrate holder 24 has a plurality of electrical contacts and the total width of the electrical contacts is not less than the circumference of the area around the area where the electrical contacts can be connected to 18 320840 200936818. The electrical contacts are in equal distances to 5 cases, and the substrate protection is thus implemented here. This will protect the door from the reverse pressure of the flow of the plating solution. The in-plane uniformity of ο ^ ° ^ has an adverse effect. The knife cloth is not uniform'. As shown in the money film, the # substrate protection system 24 is set to be used when the conveyor is placed (not shown) to hold the w " support:: on the delivery device. ; the retainer branch 64 on the protruding heart ^ is suspended and supported in the ore tank 1 〇 1G _ magnified perspective view shows the retainer arm and ❿
Hi圖為保持器臂部64與保持器支架62相_二 的杈截面圖,以及第12圖為第u 12®^^ , f#J#I,(arni_side cJact)6^° 6二ΓΓ:=面向保持器支架62的表面。臂側接點 疋用未圖不的導線電氣連接至用於供電至基板w的陰極 :另-方面,支架側接點(su_rt_side c〇ntac⑽ 疋裝在保持器支架62之面向保持器臂部64的表面。 側接點68係電氣連接至未圖示的外部電源。當基板保持器 =懸掛及支承於上時,㈣接點66與架側接點、Μ 相互接觸及閉合’藉此可使外部電源與陰極接點電氣連 320840 19 200936818 接因此’可施加陰極電壓至該等陰極接點。臂側接點66 與支架侧接點68通常是分別設在左、右保持器臂部64中 之一個與左、右保持器支架62中與其對應的-個。 作為固疋構件的臂侧磁石(arm_side贴即的)7〇是設 在保持器臂部64之面向保持器支架62的表面,而作為固 ^f件的支㈣磁石72是設在賴H支架62之面向保持 态臂部64的表面。例如,歛磁石可用作磁石70、72。藉 ❹ '、:構田基板保持器24懸掛及支承於鍍槽1〇上時,臂 侧磁石70與支架侧磁石72會相互接觸及吸引,藉此可經 基板支架62與保持器臂部使基板保持器%更穩固地 固定於鑛槽10。因此’可防止基板保持器24由於鏡液的 =動而搖擺或傾斜。臂側磁石7Q與架側磁石72通常是裝 叹在右、左保持器臂部64兩者與右、左保持器支架Μ兩 者上。 基板保持器24相對於鍍槽10的定位是用輸送裝置的 ©輸送來完成。如f 13圖所示,在保持器支架62中也可設 置在頂°卩具有錐面的溝狀開口 62a,並用開口 62a作為基 板保持S 24之保持器臂部64用的導件。當將開口(導 = )62a設於基板支架62以供基板保持器24與鍍槽⑺之 定位日守,則為了基板保持器24的定位及輸送,開口 62a需 要小尺寸的“游隙,,。當基板保持器24在“游隙,,範圍内 搖擺或傾斜時,臂侧接點66與支架侧接點68有可能永久 或間歇地斷開。鑑於這點,藉由在接點66、68附近的磁石 70 72使基板保持器24穩固地支承於鍍槽iq上,從而可 320840 20 200936818 觸。此外,可抑 以及增強接點 使臂侧接點66與支架侧接點68緊緊地接 制由於接點66、68之磨擦而導致的磨損, 66、68的耐久性。 f側磁石70與支架側磁石72中之一個可換成磁性材 °磁石也可覆上磁性材料以防止磁石因其接觸而損壞。 此外,可用磁性材料覆蓋磁石的周圍以便暴露磁石的 且部份雜材料由磁石表面突出,藉此增加磁力。 ❹姑圖所在鍍槽1〇底刪分離板80與屏蔽 板82。為了使得鍍液Q(其係由設於鍵槽ίο底部之錄液供 給入口 18供給)能在基板W的整個表面上形成均勻之流 動,在鍍槽10底部提供用以散佈鍍液的空間,以及在該空 間中水平地配置具有許多鑛液通行孔的分離板刖。因此, 分離板10可把鍍槽10的内部分成上部基板處理室84與下 部鐘液分佈室86。 第14圖為分離板8〇的平面圖,分離板8〇具有與鑛槽 ❹10之内部形狀實質相同的形狀,並具有許多遍及板體的鍍 液通行孔80a。藉由用分離板80把鍍槽10分成基板處理 室84與鍍液分佈室86,以及設置具有鍍液通行孔8〇&讓 鑛液通過的分離板80 ’而使得鍍液q可形成流向基板?的 均勻流動。如果設於分離板8〇的鍍液通行孔8〇a有大直 徑’源於陽極26的電場會穿過鍍液分佈室86並洩露進入 基板W侧’這會影響形成於基板w上之鍍膜的面内均勻度。 因此’用於本具體實施例的鍍液通行孔8〇a係具有2.5毫 米的小直徑。 21 320840 200936818 儘管在此具體實施例中,設有遍及分離板80的鍍液通 行孔80a,然而不一定要以遍及板體的方式設置小孔80线。 例如,如第15圖所示,可在以調節板34之位置A為界的 基板侧區域中設置分散的錢液通行孔80a,以及在以陽極 26之位置B為界的對面區域(在陽極後方)中也設置鍍液通 行孔80a。使用圖示於第15圖的分離板80可更有效地防 止陽極26的電場穿過鑛液分佈室86以及洩露進入基板W 侧。此外,在鍍液通行孔80a也設於陽極26後方時,可由 ® 鍍槽10可靠地排出鍍液Q。 如第16圖所示,分離板80係水平地被支承於設置在 鑛槽10之侧板l〇a上的分離板支架90上。分離板8〇與分 離板支架90可藉由設於其中間的襯墊92而緊密地接觸。 儘管使用分離板80,源於陽極26的電場仍可能穿過 鍍液分佈室86以及洩露進入基板w侧,這會影響形成於基 板W上之鑛膜的面内均勻度。因此,在此具體實施例中, ❹向下垂直延伸的屏蔽板82是安裝於分離板80的下表面。 鼓置屏敝板82可更有效地防止源於陽極26的電場穿過錢 液分佈室86以及洩露進入基板w侧,同時確保鍍液Q分散 於鍍液分佈室86中以及使鍍液Q形成流入基板處理室84 的均勻流動。關於這點,如第17圖所示,屏蔽板82是用 以下方式安裝於分離板80的下表面:屏蔽板82是配置在 鍍液供給入口 18的正上方,並在屏蔽板82與鍍槽底部 之間形成間隙“S” 。為了防止電場洩露,間隙“s,,儘可 能小為較佳。 320840 22 200936818 * 如第18圖所示,也可配置與鍍槽ι〇底部接觸的屏蔽 板82 ’以及在屏蔽板82中設置半圓形開口 82a以確保用 於鍍液的流道。此外,就此情形而言,開口 82a儘可能小 為較佳以防土電場洩露。屏蔽板82係經配置成位在分離板 8 0下表面中汉有錢液通行孔.§ 〇 a的區域中,例如,在調節 板34之位於凸緣部份52正下方的區域。 儘管在此具體實施例中,屏蔽板82是配置在鍍液供給 ❹入口 18的正上方,屏蔽板82不一定要配置於鍍液供給入 口 18的正上方。此外,也可使用多個屏蔽板82。 在第1圖的鍍覆裝置中,基板W、陽極26、調節板34 及攪拌槳32在鍍槽10中的位置關係會影響形成於基板w 上之鑛膜的面内岣勻度。在此具體實施例中,基板W、陽 極26及調節板34係經配置成使得基板W的中心、陽極26 的中心及調節板34之柱形部份50的軸線實質對齊。在此 具體實施例中’陽極26與基板W的極間距離(pole-t〇-pole ❾distance)為90毫米;而該極間距離大體上可設定於6〇毫 ^ 宅卡的麵圍内。在此具體實施例中.,基板W與調節 板34之柱形部份50在基板W侧之末端的距離為15亳米, 而柱形部份5G的長度為2G毫米,因此基板W與調節板34 之凸緣部份52的距離為35毫米。 如第19圖所示,下端與分離板8〇彈性接觸的電場屏 蔽構件94(例如,由橡膠片製成)是設在調節板34之凸緣 部份52之位在陽極側的下端。電場屏蔽構件94可防止電 机由在分離板8〇、凸緣部份52之間的間隙洩露出。也可 23 320840 200936818 使凸緣部份52的下表面與分離板80的上表面緊密接觸使 得凸緣部份52也可用作電場屏蔽構件。The Hi diagram is a cross-sectional view of the holder arm portion 64 and the holder bracket 62, and the 12th diagram is the u 12®^^ , f#J#I, (arni_side cJact) 6^° 6 2: = facing the surface of the holder bracket 62. The arm side contacts are electrically connected to the cathode for power supply to the substrate w by wires not shown: on the other hand, the bracket side contacts (su_rt_side c〇ntac (10) are mounted on the holder arm portion 64 of the holder bracket 62 The side contact 68 is electrically connected to an external power source (not shown). When the substrate holder = suspension and support, (4) the contact 66 and the frame side contact, 相互 contact and close 'by The external power source and the cathode contact are electrically connected 320840 19 200936818 so that the cathode voltage can be applied to the cathode contacts. The arm side contacts 66 and the bracket side contacts 68 are typically disposed in the left and right holder arms 64, respectively. One of the left and right holder brackets 62 corresponding thereto. The arm-side magnet (arm_side attachment) 7 作为 as the fixing member is provided on the surface of the holder arm portion 64 facing the holder bracket 62, Further, the branch (four) magnet 72 as a fixing member is provided on the surface of the yoke H bracket 62 facing the holding arm portion 64. For example, the concentrating magnet can be used as the magnets 70, 72. By ❹ ',: the field substrate holder When the suspension and support are carried out on the plating tank 1 , the arm side magnet 70 and the bracket side The magnets 72 will contact and attract each other, whereby the substrate holders can be more stably fixed to the ore tank 10 via the substrate holder 62 and the holder arm. Therefore, the substrate holder 24 can be prevented from swinging due to the movement of the mirror liquid. Or tilting. The arm side magnet 7Q and the rack side magnet 72 are typically sighed on both the right and left retainer arms 64 and the right and left retainer brackets. Positioning of the substrate holder 24 relative to the plating tank 10 This is accomplished by the delivery of the conveyor. As shown in Fig. 13, a groove-shaped opening 62a having a tapered surface may be provided in the holder holder 62, and the holder of the S 24 may be held by the opening 62a as a substrate. A guide for the arm portion 64. When the opening (guide = ) 62a is provided on the substrate holder 62 for positioning the substrate holder 24 and the plating tank (7), the opening 62a is required for the positioning and transportation of the substrate holder 24. Small size "backlash, when the substrate holder 24 is rocked or tilted within the "gap," range, the arm side contact 66 and the bracket side contact 68 may be permanently or intermittently disconnected. Retaining the substrate by magnets 70 72 near contacts 66, 68 The device 24 is firmly supported on the plating tank iq so that it can be touched by 320840 20 200936818. In addition, the restraining and reinforcing joints enable the arm side contact 66 and the bracket side contact 68 to be tightly connected due to the contacts 66, 68. Wear due to friction, durability of 66, 68. One of the f-side magnet 70 and the bracket-side magnet 72 can be replaced with a magnetic material. The magnet can also be coated with a magnetic material to prevent the magnet from being damaged by contact. The magnetic material covers the periphery of the magnet to expose the magnet and part of the impurity material is protruded from the surface of the magnet, thereby increasing the magnetic force. The plating plate is located at the bottom of the plating tank and the shielding plate 80 and the shielding plate 82 are removed. In order to allow the plating solution Q (which is supplied from the liquid supply supply inlet 18 provided at the bottom of the key groove) to form a uniform flow over the entire surface of the substrate W, a space for dispersing the plating solution is provided at the bottom of the plating tank 10, and A separation plate having a plurality of ore passage holes is horizontally arranged in the space. Therefore, the separation plate 10 can divide the inside of the plating tank 10 into the upper substrate processing chamber 84 and the lower clock liquid distribution chamber 86. Fig. 14 is a plan view of the separating plate 8'', which has substantially the same shape as the inner shape of the ore groove 10, and has a plurality of plating liquid passage holes 80a extending through the plate body. The plating bath 10 can be formed into a flow direction by dividing the plating tank 10 into the substrate processing chamber 84 and the plating solution distribution chamber 86 by using the separating plate 80, and providing the separating plate 80' having the plating liquid passage hole 8 & allowing the passage of the ore liquid. Substrate? Uniform flow. If the plating liquid passage hole 8〇a provided in the separating plate 8〇 has a large diameter 'the electric field originating from the anode 26 passes through the plating liquid distribution chamber 86 and leaks into the substrate W side', which affects the plating film formed on the substrate w. In-plane uniformity. Therefore, the plating liquid passage hole 8〇a used in the present embodiment has a small diameter of 2.5 mm. 21 320840 200936818 Although in this embodiment, the plating liquid passage hole 80a is provided throughout the separation plate 80, it is not necessary to provide the small hole 80 line in the manner of the plate body. For example, as shown in Fig. 15, a dispersed money liquid passage hole 80a may be provided in the substrate side region bounded by the position A of the adjustment plate 34, and an opposite region (at the anode) bounded by the position B of the anode 26 A plating passage hole 80a is also provided in the rear portion. The use of the separating plate 80 shown in Fig. 15 can more effectively prevent the electric field of the anode 26 from passing through the mineral liquid distribution chamber 86 and leaking into the substrate W side. Further, when the plating liquid passage hole 80a is also provided behind the anode 26, the plating solution Q can be reliably discharged by the plating tank 10. As shown in Fig. 16, the separating plate 80 is horizontally supported on the separating plate holder 90 provided on the side plate 10a of the ore 10. The separating plate 8 and the separating plate holder 90 can be in close contact by the spacer 92 provided therebetween. Although the separation plate 80 is used, the electric field originating from the anode 26 may still pass through the plating solution distribution chamber 86 and leak into the substrate w side, which affects the in-plane uniformity of the mineral film formed on the substrate W. Therefore, in this embodiment, the shield plate 82 extending vertically downward is mounted on the lower surface of the separation plate 80. The drum screen panel 82 can more effectively prevent the electric field originating from the anode 26 from passing through the money liquid distribution chamber 86 and leaking into the substrate w side, while ensuring that the plating solution Q is dispersed in the plating liquid distribution chamber 86 and forming the plating solution Q. The flow into the substrate processing chamber 84 is uniform. In this regard, as shown in Fig. 17, the shield plate 82 is attached to the lower surface of the separation plate 80 in such a manner that the shield plate 82 is disposed directly above the plating solution supply inlet 18, and is provided in the shield plate 82 and the plating tank. A gap "S" is formed between the bottoms. In order to prevent electric field leakage, the gap "s, as small as possible is preferred. 320840 22 200936818 * As shown in Fig. 18, a shield plate 82' that is in contact with the bottom of the plating tank can also be disposed and set in the shield plate 82. The semicircular opening 82a ensures a flow path for the plating solution. Further, in this case, the opening 82a is as small as possible to prevent leakage of the electric field. The shielding plate 82 is configured to be positioned under the separation plate 80. In the region of the 有a ,a, for example, in the region of the adjustment plate 34 directly below the flange portion 52. Although in this embodiment, the shield plate 82 is disposed in the plating solution. Directly above the supply port 18, the shield plate 82 does not have to be disposed directly above the plating solution supply inlet 18. Alternatively, a plurality of shield plates 82 may be used. In the plating apparatus of Fig. 1, the substrate W and the anode are used. 26. The positional relationship of the adjustment plate 34 and the agitating paddle 32 in the plating tank 10 affects the in-plane uniformity of the mineral film formed on the substrate w. In this embodiment, the substrate W, the anode 26, and the conditioning plate 34 Is configured such that the center of the substrate W, the center of the anode 26 The axis of the cylindrical portion 50 of the adjustment plate 34 is substantially aligned. In this embodiment, the pole-t〇-pole ❾distance of the anode 26 and the substrate W is 90 mm; and the distance between the poles is substantially It can be set in the circumference of the 6 〇 ^ 宅 house card. In this embodiment, the distance between the substrate W and the cylindrical portion 50 of the adjustment plate 34 at the end of the substrate W side is 15 , meters, and the column shape The length of the portion 5G is 2G mm, so the distance between the substrate W and the flange portion 52 of the regulating plate 34 is 35 mm. As shown in Fig. 19, the electric field shielding member 94 whose lower end is in elastic contact with the separating plate 8 is (for example The rubber sheet is made at the lower end of the flange portion 52 of the regulating plate 34 on the anode side. The electric field shielding member 94 prevents the motor from being disposed between the separating plate 8 and the flange portion 52. The gap is leaked out. 23 320840 200936818 The lower surface of the flange portion 52 is brought into close contact with the upper surface of the separating plate 80 so that the flange portion 52 can also function as an electric field shielding member.
Ο 可用能夠調整調節板34與基板w之距離的方式來安| 調節板34於鍍槽10。特別是,如第2〇圓所示,可在鍍^ 10的側板10a上裝設具有多個以預定間距排列之垂直狹^ 96a的調節板固定用開縫板96,以及將調節板以之凸緣部 份52的各侧端插入調節板固定用開缝板%的任意狹縫 =a。調節板固定用開縫板9 6可用狹縫9 β b及固定螺絲 ,裝於賴侧板10a。此—安裝法使得有可能精細地铜、8 碉節板34與基板w的距離以便可使調節板34位§°整 类員基板的最佳位置。 ;於此 μ最好在調節板固定用開缝板96附近的凸緣部份 咬置由橡膠密封件製成的一對電場屏蔽構件1〇〇,二中 此形成由陽極26朝向基板W的電場穿過凸緣部份更防 ,與狹縫96a之間的間隙。電場屏蔽構件1〇〇可J各 在調節板固定用開縫板96的陽極侧。 "、裝毁 在本發明的鍍覆裝置中,形成於基板上的 曲 徑為150微米,而鍍覆目標厚度為11〇微米。二型 ^等凸塊,最好使用硫酸銅濃度不小於15〇克/升的形成 :示範鍍液包括具有下顺合物的驗性溶液,、鍍液。 ?添加物’特別是聚合物成份(抑制劑)、载:種 剛)、以及整平劑成份(抑制劑): 财々(加迷 容液的組合物 硫酸鋼五水化物(CuS〇4-5H2〇): 2〇〇克/升 320840 24 200936818 硫酸(H2SO4) : 100克/升 氯(Cl) : 60毫克/升 儘管習知常用鍍覆方法是以3 ASD至5 ASD的電流密 度來進行形成凸塊的鍍覆,本發明是以例如8 ASD的電流 密度來進行錢覆。本發明的鍍覆裝置及鍍覆方法能以達14 ASD的電流密度來實施鍍覆。除非另有說明,在以下的說 明中’鑛覆操作是以8 ASD的電流密度進行 第21圖圖示用於形成凸塊的鍍銅製程。首先,藉由沉 浸基板於純水例如持續1〇分鐘來用水預清洗基板。接下 來,藉由沉浸基板於5體積百分比(ν〇ι%)的硫酸例如持續 1分鐘來實施基板的預處理。然後用純水清洗基板例如持 續30秒。純水清洗係實施兩次。之後,用以下方式實施基 ❿ 的銅鍍覆·首先,在不施加電流的情形下沉浸基板於^ 液持、’只1刀麴,然後施加電流至鍍覆系統。用純水清洗^ 覆後的基板,然_如藉㈣吹聽來乾_基板。知 m a#J',J^^^(resist-tripping solutio 從基板剝掉_,歸進行水清洗及乾燥。 第22圖及第23圖圖示有不同形狀的凸 電流密度同樣為8 ASD但用 沾 度不相同的不同鑛覆方法賴㈣之_ 下述方式形成之凸塊之形別疋’弟22圖係顯示 平均㈣Μ 實麵覆時,使攪拌紫』 夢此來2G公分/秒的速度(其為習知常用速度)移! 藉此來料鍍液^第23 _顯相下述方式形成之凸- 320840 25 200936818 之形狀:在實施鍍覆時,使攪拌紫以平均絕對值為83公分 /秒的速度移動藉此攪拌鍍液。如第22圖所示,在用8ASD 的高電流密度進行鍍覆同時攪拌鍍液的攪拌槳是以習知的 低速移動,藉此形成凸塊時,凸塊之凸形頂部的高度hl為 30徵米,然而,如第23圖所示,在用相同的高電流密度 進行鑛覆同時授拌鍍液的擾拌樂是以顯著較高的速度(.平 均絕對值為83公分/秒)移動藉此形成凸塊的情形中,其凸 形了貞部的⑨度h2為15微米而顯著低於習知凸塊的高度。 ^ 第24圖至第28圖圖示藉由使用構造大體與第1圖所 示之鍍覆裝置相同的鍍覆裝置之鍍覆方法形成於基板(晶 圓)上的凸塊之顯微照片’其中該等鍍覆方法係使用不同的 授拌樂以及以不同的移動速度授拌鍍液。具體而言,第24 圖所示之凸塊係藉由下述方式形成:在實施鑛覆之同時, 授拌鍵液的授拌紫(厚度2毫米)是以平均絕對值為4〇公分 /秒的速度移冑可在形成於基板之整個表面上的凸塊觀察 〇到缺陷。第25圖所示之凸塊係藉由下述方式形成:在實施 鍍覆之同時,攪拌鍍液的攪拌槳(厚度4毫米)是以平均絕 對值為40公分/秒的逮度移動。形成於基板之整個表面上 的凸塊有缺陷以及有不規則的形狀。由第24圖及第25圖 可見,只增加授拌槳的厚度是不夠的。 第26圖所示之凸塊是藉由下述方式形成:在實施鍍覆 之同時,攪拌鍍液的攪拌槳(厚度4毫米)是以平均絕對值 為67公分/秒的速度移動。可在形成於基板之整個表面上 的凸塊觀察到缺陷。第27圖所示之凸塊是藉由下述方式形 320840 26 200936818 % 成:在實施錢覆之同時,授拌鍍液的授拌紫(厚度4毫米) 是以平均絕對值為83公分/秒的速度移動。形成於基板之 整個表面上的凸塊為無缺陷的優良凸塊。吾等認為造成第 26圖凸塊與第27圖凸塊有上述差異之原因為,當授掉槳 以低速移動時,銅離子的供給在高電流密度條件下會不足 而造,凸塊的缺陷,而當耐槳以高速移動時,可供給足 夠數量的銅離子而可形成無缺陷的凸塊。當在相同的高電 流密度條件下進行鏟覆之同時擾拌錢液的擾掉紫(厚度3 毫米)是以平均絕對值為83公分/秒的速度移動時,可觀察 到形成於基板之整個表面上的凸塊都沒有缺陷,如第28圖 戶斤不。由第27圖與第28圖的比較可見,與使用厚度4毫 米的擾拌槳相比,使用厚度3毫米的擾拌紫係產生頂部較 圓的凸塊。 第29圖係圖示使用在分離板下面不裝設屏蔽板的鍍 槽來進行鍍覆時所形成之凸塊在基板上的高度分布,而第 Φ 30圖圖不使用在分離板下面設有屏蔽板的鍍槽來進行鍍覆 時所形成之凸塊在基板上的高度分布。列於附註之數值妁 單位為‘微米(/ΖΠ1)” 。如第29圖所示,當不使用屏蔽板 時’基板之靠近鏡槽底部的邊緣部份之鍍覆厚度(凸塊高度) 係大於中央部份,然而,如第30圖所示,當使用屏蔽板時, 基板之靠近鐘槽底部的邊緣部份之鑛覆厚度會減少到大致 與中央部份之鍍覆厚度相同的程度。 第31圖及第32圖的曲線圖係圖示以不同鍍覆方法形 成於基板上之凸塊在基板上之高度的面内均句度,該等方 27 320840 200936818 m不同形狀且與配置在離基板有不同距離的調 ^第32 半紫用不同的移動速度來擾拌鍍液。第31圖 :第=X轴與Y轴為第33圖中之正交軸線。具 均J.tl圖示以下述方式形成之凸塊之高度的面内 =二又I成該等凸塊的錄覆係、使用在 與基板相距35毫米的5毫米厚扁平調節板’同 攪拌槳是以平均絕對值為20公分/秒的速度 ❹ 32圖圖-:Γ度(鍍覆厚度)的分布為W形的分布曲線。第 成二Γ:: 成之凸塊之高度的面内均勻度:形 =Γ=係使用如第7圖所示、與基板相距15毫 ’㈣攪拌鍍㈣㈣妓料賴對值為83 移動。凸塊高度(鍍覆厚度)的分布曲線比第 31圖所不者平坦,這表示第32圖的凸塊之面内均句度有 提南。 ❹ 第34圖為本發明之艘覆裝置之另一具體實 體實施例的鍍覆襄置係使用由分離板8〇下表面垂直向下 t伸且下端到達鍍槽1G底壁的屏蔽板82。因此,形成於 =板80下面的鍍液分佈室86會完全被屏蔽板犯分隔成 %極側溶液分佈室110與陰極侧溶液分佈室ιΐ2。屏蔽板 82的下端表面是用例如焊接法固定於鍍槽10的底壁。 鍍液供給路線16在怪溫單元2〇與過滤器 主閥m與流量計116。在W22下游,鑛液供給路線 …叉成兩條分叉路線16a、16b,而分叉路線16a、⑽ 各自連接至陽極側溶液分佈室110與陰極侧溶液分佈室 320840 28 200936818 112。分叉路線16a、16b各自設有閥118a、118b。 藉由以此方式用屏蔽板82把鍍液分佈室86完全分隔 極侧驗分佈室UG與陰極侧溶液分佈室112,則可 可#地防止由陽極26產生的電位線穿過鍍液分佈室86的 鐘液錢露進入陰極(基板)側。此外,可通過鍍液供給路 線16來個別供給錢液至陽極側溶液分佈室與陰極側溶 液分佈室112。 Ο 第35圖及第36圖圖示用於攪拌槳32的另一驅動機構 ”鍍槽10 〇在此具體實施例中,將攪拌槳32的上端安裝 ^授拌槳保持構件12G。由祕_動部件42伸出的轴桿 3=皮分,個部份:分別用轴桿保持器4〇支承的右端及 二' 38b ’以及位於末端轴桿聊、38b之間的 2杯38c。中間軸桿38c係穿過授㈣保持構件i2〇 二:中聯結器一调节 The adjustment plate 34 can be placed in the plating tank 10 in such a manner that the distance between the adjustment plate 34 and the substrate w can be adjusted. In particular, as shown by the second circle, the adjustment plate fixing slit plate 96 having a plurality of vertical slits 96a arranged at a predetermined pitch may be mounted on the side plate 10a of the plating plate 10, and the regulating plate may be Each side end of the flange portion 52 is inserted into any slit = a of the adjusting plate fixing slit plate %. The adjusting plate fixing slit plate 916 can be attached to the sloping side plate 10a by the slit 9 β b and the fixing screw. This - the mounting method makes it possible to finely distort the copper, 8 gusset plate 34 from the substrate w so that the adjustment plate 34 can be positioned at the optimum position of the entire substrate. Preferably, the pair of electric field shielding members 1 由 made of a rubber seal are bitten at the flange portion near the adjusting plate fixing slit plate 96, and the second portion is formed by the anode 26 toward the substrate W. The electric field passes through the flange portion to prevent a gap with the slit 96a. The electric field shielding members 1 are each located on the anode side of the adjusting plate fixing slit plate 96. "Installation In the plating apparatus of the present invention, the diameter of the substrate formed on the substrate was 150 μm, and the target thickness of the plating was 11 μm. The type II bump is preferably formed using a copper sulfate concentration of not less than 15 g/l: the exemplary plating solution includes an in-situ solution having a lower compound, and a plating solution. Additives 'especially polymer components (inhibitors), carrier: seed just), and leveling agent components (inhibitors): Treasury (combination of sulfuric acid steel pentahydrate (CuS〇4- 5H2〇): 2 gram/liter 320840 24 200936818 Sulfuric acid (H2SO4): 100 g/L chlorine (Cl): 60 mg/L Although the conventional plating method is conventionally carried out at a current density of 3 ASD to 5 ASD. The plating of the bumps is formed by the present invention at a current density of, for example, 8 ASD. The plating apparatus and the plating method of the present invention can perform plating at a current density of up to 14 ASD. Unless otherwise stated, In the following description, the 'mineralization operation is performed at a current density of 8 ASD. Figure 21 illustrates a copper plating process for forming bumps. First, pre-cleaning with water by immersing the substrate in pure water, for example, for 1 minute. Substrate. Next, the substrate is pretreated by immersing the substrate in 5 volume percent (v% by weight) of sulfuric acid, for example, for 1 minute. The substrate is then washed with pure water for, for example, 30 seconds. The pure water cleaning system is performed twice. After that, the copper plating of the base is implemented in the following manner. First, immerse the substrate in the liquid without holding current, 'only 1 knife 麴, and then apply current to the plating system. Clean the substrate after washing with pure water, then _ if by (4) blowing to dry _ Substrate. Know ma#J', J^^^(resist-tripping solutio) is stripped from the substrate, and is washed and dried by water. Figures 22 and 23 show that the convex current density of different shapes is also 8 ASD. However, different mineral deposit methods with different degrees of staining are used. The shape of the bumps formed in the following manners is shown in the following way. The image of the brother 22 shows the average (four) Μ when the solid surface is covered, so that the stirring purple is dreaming 2G cm/sec. The speed (which is the conventional speed) is shifted! By this, the plating solution is formed. The 23rd_phase is formed by the following method. - 320840 25 200936818 Shape: When performing plating, make the stirring purple to the average absolute value. The plating solution was stirred at a speed of 83 cm/sec. As shown in Fig. 22, the stirring paddle which was plated with a high current density of 8 ASD while stirring the plating solution was moved at a known low speed, thereby forming a convex shape. In the case of a block, the height hl of the convex top of the bump is 30 mm, however, as shown in Fig. 23, the same is used. The high current density of the mineral coating and the mixing of the plating solution are at a significantly higher speed (average absolute value of 83 cm / sec) to form a bump in the case where the convex portion is convex The 9 degree h2 is 15 micrometers and is significantly lower than the height of the conventional bumps. ^ Figures 24 to 28 illustrate plating by using the same plating apparatus as the plating apparatus shown in Fig. 1 A photomicrograph of a bump formed on a substrate (wafer) in which the plating method is performed using different inductive music and at different moving speeds. Specifically, the bump shown in Fig. 24 is formed by performing the mineral coating while the mixing of the bonding liquid (thickness of 2 mm) is an average absolute value of 4 〇 / The speed shift of the second can observe defects in the bumps formed on the entire surface of the substrate. The bump shown in Fig. 25 was formed by moving the stirring paddle (thickness 4 mm) of the plating solution while moving, with a mean absolute value of 40 cm/sec. The bumps formed on the entire surface of the substrate are defective and have an irregular shape. It can be seen from Figs. 24 and 25 that it is not sufficient to increase the thickness of the mixing paddle. The bump shown in Fig. 26 was formed by moving the stirring paddle (thickness 4 mm) of the plating solution while moving at a speed of an average absolute value of 67 cm/sec. Defects can be observed on the bumps formed on the entire surface of the substrate. The bump shown in Fig. 27 is formed by the following method: 320840 26 200936818 %: At the same time as the implementation of the money cover, the mixing of the plating solution (thickness 4 mm) is an average absolute value of 83 cm / The speed of the second moves. The bumps formed on the entire surface of the substrate are excellent bumps without defects. We believe that the reason for the difference between the bumps in Figure 26 and the bumps in Figure 27 is that when the paddle is moved at a low speed, the supply of copper ions is insufficient under high current density conditions, and the defects of the bumps When the paddle is moved at a high speed, a sufficient amount of copper ions can be supplied to form a defect-free bump. When the shovel is applied under the same high current density conditions, the disturbing purple (thickness 3 mm) of the scrambled liquid is moved at a speed of an average absolute value of 83 cm/sec, and the entire formation on the substrate can be observed. There are no defects on the surface of the bumps, as shown in Figure 28. As can be seen from the comparison of Fig. 27 and Fig. 28, the use of a scrambled purple system having a thickness of 3 mm produces a relatively round top bump as compared with the use of a spoiler having a thickness of 4 mm. Figure 29 is a diagram showing the height distribution of the bumps formed on the substrate by plating using a plating tank without a shield plate under the separation plate, and the Φ 30 map is not used under the separation plate. The plating of the shielding plate is used to perform the height distribution of the bumps formed on the substrate. The value listed in the note is in the order of 'micron (/ΖΠ1). As shown in Fig. 29, when the shield is not used, the plating thickness (bump height) of the edge portion of the substrate near the bottom of the mirror groove is More than the central portion, however, as shown in Fig. 30, when the shield is used, the thickness of the underlying portion of the substrate near the bottom of the bell groove is reduced to approximately the same extent as the plating thickness of the central portion. The graphs of FIGS. 31 and 32 are diagrams showing the in-plane uniformity of the height of the bumps formed on the substrate by different plating methods on the substrate, the squares of the different shapes and arrangements of 27 320840 200936818 m The 32nd half-purple from different distances of the substrate is used to disturb the plating solution with different moving speeds. Fig. 31: The X-axis and the Y-axis are the orthogonal axes in Fig. 33. The in-plane ratio of the height of the bumps formed in the following manner = two and I is the recording system of the bumps, using a 5 mm thick flat adjustment plate at a distance of 35 mm from the substrate, and the stirring paddle is an average absolute value. For a speed of 20 cm / sec 图 32 Graph -: The distribution of the twist (plating thickness) is W-shaped Distribution curve. The second dimension:: In-plane uniformity of the height of the bump: Shape = Γ = is used as shown in Figure 7, and the distance from the substrate is 15 milli' (four) stirring plating (four) (four) 83 movement. The distribution curve of the height of the bump (plating thickness) is flatter than that of Fig. 31, which means that the in-plane uniformity of the bump of Fig. 32 has a hint of south. ❹ Figure 34 is a ship of the invention. The plating device of another specific physical embodiment of the covering device uses a shielding plate 82 which is vertically downwardly t-shaped by the lower surface of the separating plate 8 and reaches the bottom wall of the plating tank 1G by the lower end. Therefore, it is formed under the = plate 80. The plating solution distribution chamber 86 is completely divided by the shield plate into the %-pole solution distribution chamber 110 and the cathode-side solution distribution chamber ι 2. The lower end surface of the shield plate 82 is fixed to the bottom wall of the plating tank 10 by, for example, welding. The supply route 16 is at the weft temperature unit 2〇 and the filter main valve m and the flow meter 116. Downstream of W22, the mineral supply route is forked into two bifurcation routes 16a, 16b, and the bifurcation routes 16a, (10) are each connected to Anode side solution distribution chamber 110 and cathode side solution distribution chamber 320840 28 200936818 112. Bifurcation route 16a And 16b are each provided with valves 118a and 118b. By completely separating the plating solution distribution chamber 86 by the shield plate 82 in this manner from the pole side distribution chamber UG and the cathode side solution distribution chamber 112, the coke can be prevented from being generated by the anode 26. The potential line passes through the clock liquid of the plating solution distribution chamber 86 and enters the cathode (substrate) side. Further, the liquid liquid can be supplied to the anode side solution distribution chamber and the cathode side solution distribution chamber 112 by the plating liquid supply route 16. Ο FIGS. 35 and 36 illustrate another drive mechanism for the agitating paddle 32. The plating tank 10 〇 In this embodiment, the upper end of the agitating paddle 32 is attached to the paddle holding member 12G. The shaft 3 protruded from the secret member 42 = the skin portion, the right portion: the right end supported by the shaft holder 4〇 and the two '38b' respectively, and the two cups 38c located between the end shaft bar and 38b . The intermediate shaft 38c is passed through the (four) holding member i2 〇 two: the middle coupling one
Q 咖。在此且體竇如=聯、、、°器122b連接至末端軸桿 聯处器。不月例中,聯結器122a、122b是用螺桿型 器不過’可使用任何聯結器,例如所謂的快速聯結 而由:Ϊ裝Ϊ更t攪拌槳32時,可透過聯結器122a、122b 此,由鑛覆褒置卸下轴桿保持器4〇。因 裝授拌樂32於鍍覆褒置時,能外,在重新安 32於預定位詈。, 民好的重覆性安裝攪拌槳 ’可藉由暫時由鑛覆裝置卸下擾拌 320840 29 200936818 槳32來輕易地完成調節板34的卸除及重新安裝。 第37圖圖示設有調節板移動機構的另一調節板與另 一鍍槽。此具體實施例的鍍槽10係包含内槽130與包圍内 槽130之外周的外槽132。調節板134係由具有柱形部份 136的矩形板狀主體部份138、與比主體部份138寬且與主 體部份138之頂部一體成形的夾持部份140構成。在此具 體實施例中,調節板134在與基板W平行之橫向(水平)方 向的定位係經由夾挎部份140用調節板移動機構142來完 ❹成。 調節板移動機構142包含:經配置成跨越鏡槽1〇之上 開口的調節板支架144 ;垂直地裝在調節板支架之外 周端上的一對托架146 ;各自藉由與形成於各托架146之 母螺紋嚙合而可水平移動的橫向壓入螺栓(lateral press b〇lt)148;以及,各自穿透形成於各托架146之無負載孔 (unloaded hole)且水平延伸的橫向固定螺栓15()。當將調 〇節板134的夾持部份140置於調節板支架⑷上而將調節 板134設定至預定位置時,椹 1cn A姐入 杈向壓入螺栓148與橫向固定 螺栓150的位置會在夾持部 夾持部份H0之各個外周的外周端表面對面。在 ^ 1Rn ^ . ^ 鳊表面中之相對向於橫向固定螺 栓15◦的位置,形成各自與横向 母螺紋。橫向壓入螺栓1⑽螺紋喵口的 面接觸,而在被栓緊時係向:壓=請的綱^ 因此,在安置調節板13 卽板134 ° 架144上以及設定調節柄、A持部份140於調節板支 134於預定位置後,可用橫向壓 320840 30 200936818 '、 8來元成調節板134在與基板W平行之橫向方向Q coffee. Here, the sinus sinus, such as the sinus, and the sinus 122b, is connected to the end shaft joint. In the case of a non-monthly case, the couplers 122a, 122b are of a screw type but can be used with any coupler, such as a so-called quick coupling, which can be transmitted through the couplers 122a, 122b by means of the couplings 122a, 122b. The mine cover removes the shaft retainer 4〇. Because the accompaniment of the mixer 32 is applied to the plating position, it can be re-arranged at the predetermined position. The re-installation of the paddles by the people can be easily removed and reinstalled by temporarily removing the spoiler 320840 29 200936818 paddles 32 from the ore cover device. Figure 37 illustrates another adjustment plate and another plating tank provided with an adjustment plate moving mechanism. The plating tank 10 of this embodiment includes an inner tank 130 and an outer tank 132 surrounding the outer circumference of the inner tank 130. The adjustment plate 134 is composed of a rectangular plate-like main body portion 138 having a cylindrical portion 136, and a clamping portion 140 which is wider than the main body portion 138 and integrally formed with the top portion of the main body portion 138. In this particular embodiment, the positioning of the adjustment plate 134 in the lateral (horizontal) direction parallel to the substrate W is completed by the adjustment plate moving mechanism 142 via the clamping portion 140. The adjustment plate moving mechanism 142 includes: an adjustment plate bracket 144 configured to open across the mirror slot 1; a pair of brackets 146 vertically mounted on the outer peripheral end of the adjustment plate bracket; each of which is formed by each of the brackets a lateral press b lt 148 that is engaged with the female thread of the frame 146 to be horizontally movable; and a horizontally extending horizontally extending bolt that penetrates the unloaded hole of each of the brackets 146 and extends horizontally 15(). When the clamping portion 140 of the spoon plate 134 is placed on the adjusting plate bracket (4) and the adjusting plate 134 is set to the predetermined position, the position of the pressing pin 148 and the lateral fixing bolt 150 will be The outer peripheral end surface of each outer circumference of the nip portion H0 is sandwiched. In the position of the ^ 1Rn ^ . ^ 鳊 opposite to the lateral fixing bolt 15 ,, the respective lateral and female threads are formed. The lateral pressing bolt 1 (10) is in contact with the surface of the threaded spigot, and when it is tightened, it is directed to: pressure = please. Therefore, place the adjusting plate 13 134 134 ° frame 144 and set the adjusting handle, A holding part After the adjustment plate branch 134 is at a predetermined position, the lateral direction of the adjustment plate 134 may be parallel to the substrate W by a lateral pressure of 320840 30 200936818 ', 8 .
:的:位’以及可用橫向固定螺栓⑽來固定調節板134。 可=、、㈣夹持部份14G而是經由調節板134中之其他部份 來完^藉由横向壓入騎148及橫向固定· 15〇所進行 之調卽板134的定位。藉由控制具有預定螺距的各橫向壓 入螺栓148的迴轉數,可輕易調整調節板134㈣向(水平) 移動距離。在横向壓入螺栓148不與夹持部份140的外周 端表面接觸而不壓著調節板134時,各個橫向固定螺检15〇 係作用為牽引螺栓(draw bolt)。 ,了使調節板134朝與基板评平行的橫向方向移動, 在調節板134之主體部份138的周面與鍍槽1〇之内槽13〇 的内周面之間形成間隙。在此具體實施例中,在内槽13〇 中:與調節板134之主體部份138的周面相對向之:置, 裝設具有向内形成開σ之溝狀凹槽咖的導引構件脱, 並將調節板134之主體部份138的外周端部份插入導引構 ❿件152的凹们52a。導引構件152係使得調節板134能狗 使用導引構件152作為導件來與基板f呈平行地橫向(水平) 移動,同時保持調節板134與基板w的距離不變。此外, 將調節板134之主體部份138的外周端部份插入導引構件 152的凹槽152a係可防止電場由調節板134周邊沒露出。 如第38圖所示,在導引構件152的凹槽152a底部盥 調節板134之主體部份138的周面之間提供—移動間隙 (movement gap)tl。例如,移動間隙tl係為j毫米至5毫 米’而以1毫米至2亳米為較佳。基於構造上的理由,通 320840 200936818 * 常在導引構件152與内槽130的内周面之間形成一間隙 t2 °在此具體實施例中,為了防止電位線由間隙t2鴻露 出’係利用密封保持構件154與數個固定螺栓156將電場 屏蔽構件158(例如,由橡膠密封件構成)固定於導引構件 152上’其中電場屏蔽構件158的自由端係與内槽130的 内周面壓力接觸(pressure contact)。儘管在此具體實施 例中,電場屏蔽構件158是配置於導引構件152的陽極侧, Λ 然而它可配置於導引構件152的陰極(基板)側或兩側都 。有。 懾&在此具體實施例中,是用調節板移動機構142冲 ,調節板134與基板W呈平行地橫向移動,然而也可使韻 二板134與基板w呈平行地水平及垂直移動。第39圖圖力 設計成可使調節板134與基板W呈平行地水平及垂直移鸯 的調節板移動機構160。調節板移動機構16G與第37 _ ❹ :板移動機請不同的地方在於:在調節板134之失裝 邛伤140的每個向外突出部份中設有垂 圈母螺紋(heli-sert femaWh ¥穿式螺旋讀 1R0^ ei〇alethread)’且使垂直壓入螺老 162(其係與該母螺紋以螺纟 人 ^^ Λ 、,嚙口)的下禚與調節板支架14 的頂面接觸,錢錢持部们4㈣ :部設有朝鑛槽i◦之寬度方向延伸的狹二出= 螺检164插入該狹縫,而且蔣亩 將直固^ 設於詷r杯古加144沾夺垂直固尤螺栓164的下部與 〇又於凋即板支架144的母蟫妗4人 橫向固定螺栓。 螺、纹本具體實施例不使用 根據此具體實施例,卷鈿芬田士 田朝緊固方向旋轉垂直壓入螺桂 320840 32 200936818 162時’螺栓162的尖端會與調節板支架Mi的頂面接觸, 藉由相對於作用在頂面上之接觸壓力的反作用力,使調節 板134向上移動。反之,當朝放鬆方向旋轉垂直壓入螺栓 162時,調節板134會向下移動。在完成調節板134相對 於基板W的水平及垂直定位後,垂直固定螺栓164的下部 係與設於調節板支架144的母螺紋嚙合而固定調節板134。 可使用氣缸、伺服馬達等等,而取代壓入螺栓Mg、 Ο ❹ 162。此外,可結合使用第37圖所示久調節板移動機構⑷ 與第39圖所示之調節板移動機構16〇,以調整調節板 的垂直及水平位置。就此情形而言,供橫向固定螺检咖4 插入的垂直延伸狹縫可設於粍架146,藉此調節板'丨34可 用橫向固定螺栓150來固定,而不論調節板134之垂直°位 移位置為何。也可省略第39圖射之卿板移動機構^ 的橫向壓入螺检148以便只進行調節! 34相對於基板# 之垂直定位。 藉由用調節板移動機構142微調調節板134相對於男 板W的水平位置或用_板移動機構⑽微調 、= 相對於基板W的水平及垂直位置,可提高形成於基板评 面上之鍍朗厚紅面_⑽。㈣是,由 是配置於靠近基板W位置,微_料〗 W的垂直或水平位践於提高職於錢丨細上之基板 的厚度之面内均勻度是很重要的。 又 調續板是添加以下結構 於安裝辅助調節板170 第40圖及第41圖所示的另一 於圖示於第37圖的調節板I%。用 320840 33 200936818 ❹The : position ' and the lateral fixing bolts (10) can be used to fix the adjustment plate 134. The positioning of the slab 134 by the lateral pressing of the ride 148 and the lateral fixing 15 经由 can be performed by the other portions of the adjustment plate 134. The distance of the adjustment plate 134 (four) to the (horizontal) movement can be easily adjusted by controlling the number of revolutions of each of the lateral pressing bolts 148 having a predetermined pitch. When the lateral pressing bolt 148 is not in contact with the outer peripheral end surface of the holding portion 140 without pressing the regulating plate 134, each of the lateral fixing screws 15 acts as a draw bolt. The adjustment plate 134 is moved in the lateral direction parallel to the substrate, and a gap is formed between the circumferential surface of the main portion 138 of the adjustment plate 134 and the inner circumferential surface of the groove 13〇 in the plating groove 1〇. In this embodiment, in the inner groove 13〇: opposite to the circumferential surface of the main body portion 138 of the adjusting plate 134: a guiding member having a groove-shaped groove inwardly forming an opening σ is provided The outer peripheral end portion of the main body portion 138 of the adjusting plate 134 is inserted into the recess 52a of the guiding member 152. The guiding member 152 is such that the regulating plate 134 can use the guiding member 152 as a guide to move laterally (horizontally) in parallel with the substrate f while maintaining the distance between the regulating plate 134 and the substrate w. Further, the insertion of the outer peripheral end portion of the main body portion 138 of the adjusting plate 134 into the recess 152a of the guiding member 152 prevents the electric field from being exposed by the periphery of the regulating plate 134. As shown in Fig. 38, a movement gap t1 is provided between the peripheral surface of the main portion 138 of the regulating plate 134 at the bottom of the groove 152a of the guiding member 152. For example, the moving gap tl is preferably from j mm to 5 mm' and is preferably from 1 mm to 2 mm. For structural reasons, pass 320840 200936818 * A gap t2 is often formed between the guiding member 152 and the inner circumferential surface of the inner groove 130. In this embodiment, in order to prevent the potential line from being exposed by the gap t2 The seal holding member 154 and the plurality of fixing bolts 156 fix the electric field shielding member 158 (for example, composed of a rubber seal) to the guide member 152 'where the free end of the electric field shielding member 158 is pressed against the inner peripheral surface of the inner groove 130 Pressure contact. Although in this embodiment, the electric field shielding member 158 is disposed on the anode side of the guiding member 152, it may be disposed on the cathode (substrate) side or both sides of the guiding member 152. Have.慑& In this embodiment, the adjustment plate moving mechanism 142 is used, and the adjustment plate 134 is laterally moved in parallel with the substrate W. However, the second plate 134 may be horizontally and vertically moved in parallel with the substrate w. Fig. 39 is a regulation plate moving mechanism 160 designed to move the adjustment plate 134 horizontally and vertically in parallel with the substrate W. The adjustment plate moving mechanism 16G differs from the 37th _ ❹: plate moving machine in that a heave-sert femaWh is provided in each outwardly protruding portion of the unloading flaw 140 of the adjustment plate 134. ¥穿穿螺旋 reads 1R0^ ei〇alethread)' and vertically presses the lower surface of the screw 162 (which is threaded with the female thread) and the top surface of the adjustment plate bracket 14 Contact, money and money holding department 4 (four): The Ministry has a narrow two out of the width of the mine slot i = the screw inspection 164 inserted into the slit, and Jiang Mu will be straight solid ^ set in the 詷r Cup Gujia 144 dip The lower portion of the vertical solid bolt 164 is laterally fixed to the female body of the female bracket of the plate bracket 144. The embodiment of the bolt 163 is not used. According to this embodiment, the tip of the bolt 162 is aligned with the top surface of the adjusting plate bracket Mi when the 钿 钿 士 士 士 朝 朝 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 In contact, the adjustment plate 134 is moved upward by a reaction force with respect to the contact pressure acting on the top surface. On the contrary, when the vertical pressing bolt 162 is rotated in the loosening direction, the regulating plate 134 is moved downward. After the horizontal and vertical positioning of the adjustment plate 134 with respect to the substrate W is completed, the lower portion of the vertical fixing bolt 164 is engaged with the female screw provided on the adjustment plate holder 144 to fix the adjustment plate 134. Instead of the press-in bolts Mg, ❹ 162, a cylinder, a servo motor or the like can be used. Further, the adjustment plate moving mechanism (4) shown in Fig. 37 and the adjustment plate moving mechanism 16A shown in Fig. 39 can be used in combination to adjust the vertical and horizontal positions of the adjustment plate. In this case, the vertically extending slit for the insertion of the lateral fixing screw 4 can be provided on the truss 146, whereby the adjusting plate '丨34 can be fixed by the lateral fixing bolt 150 regardless of the vertical displacement position of the adjusting plate 134. Why? It is also possible to omit the lateral press-in screw 148 of the slab moving mechanism of Fig. 39 to perform only adjustment! 34 with respect to the vertical positioning of the substrate #. By using the adjustment plate moving mechanism 142 to finely adjust the horizontal position of the adjustment plate 134 with respect to the men's plate W or by using the plate movement mechanism (10) to finely adjust the horizontal and vertical positions relative to the substrate W, the plating formed on the substrate evaluation surface can be improved. Long thick red noodles _ (10). (4) Yes, it is important to arrange the in-plane uniformity of the thickness of the substrate on the fineness of the substrate. Further, the splicing plate is added to the adjustment plate I% shown in Fig. 37 shown in Figs. 40 and 41 of the auxiliary adjustment plate 170. With 320840 33 200936818 ❹
的輔助調節板安裝部件是設在調節板134之主體部份138 的陽極侧表面^該辅助調節板安裝部件係由固定在對應至 輔助調節板170之外周侧部(Peripheral side portion) 之位置的一對侧鉤172a、與固定在對應至辅助調節板170 之底部角落的一對底鉤172b構成。藉由把輔助調節板170 放在調節板134的辅助調節板安裝部件(由該對侧鉤172a 及該對底鉤172b構成)裡,可將辅助調節板Π〇擺設至相 對於調節板134的預定位置處。 在此具體實施例中,具有用於8吋晶圓之開口 134a# 調節板(8吋晶圓調節板)係用作調節板134,以及具有用於 6叫晶圓之開口 170a的輔助調節板(6吋晶圓調節板)係用 作輔助調節板170。用此結構,當基板W由8吋晶圓換成〔 吋晶圓時,只要使辅助調節板(6吋晶圓調節板)17〇附接於 調節板(8吋晶圓調節板)134即可應付此一改變,而不用更 換調節板。夾持開口 170b是設在辅助調節板1?〇的頂部。 調節板134與輔助調節板17〇間之重疊的橫向尺寸' t3、t4與下部垂直尺寸t5各者一般而係不小於5毫米 以不小於1G毫米為較佳。在辅助調節板m附接二 134時,這可防止陽極26的電力線穿過調節板 調節板no的間隙然後穿過調節板134的開口 i3/、辅助 穿過輔助調節板170的開α n〇a。 &’而不 儘管此具體實施例是使用8对晶圓調節板與 調節板的組合,然而有可能使用任何兩種調節板(第 二調節板)的組合。例如’可在通讀形使用第—調節 320840 34 200936818 =及在有需要根據所用基板(鐘覆物件)之類型來調整電場 刀布時,使用與該第一調節板組合的第二調節板。 第42圖及第43圖係圖示本發明鍍覆裝置之另一具體 實施例的主要部份。此具體實施例的鍍覆裝置與第i圖所 不之鑛覆裝置不同的地方在於··前者使用在頂 陽極保持器卿 ❹ 調節板134(如第37圖所示),以及陽極_ n 8、§周郎板134及基板保持器24係各自經由夹持部份 8〇、夾持部份14〇及保持器臂部64(請參 圖 ,越錢㈣之頂部開口的單一定位/保^ :因此’是在由單一構件構成的定位/保持部㈣2上安 極保持器28之夾持部份⑽、調節板 =礼140以及基板保持器24之保持器臂部料 夬 ο 有可旎牛靠地使藉由陽極保持器28固定之陽 軸、調節板134之柱形部份136之中 = 器Μ固定之基板W的中心軸彼此重合細及用基板保持 儘管在此具體實施例中,是在由 保持部件182上安置陽極保持器 牛構成的定位7 __部請以及基 =^部_、調節 6 4 ’然而也有可能安置陽極保持器2 8 1節的臂其部 保持器24的其他部份於定位/保持部件=㈣4及基板 定位/保持部件182作為參考來完 上’只要可用 板134及基板保持器24的垂直定位保持器28、調節 第44圖及第45圖圖示另-調節板。_㈣添加 320840 35 200936818 第7圖所示的調節板134。-橫隔膜188係 = C=XingPlate)]84及固定螺㈣固定至調 即板134之主體部们38的陽極侧表面 ⑽可覆蓋整辦央開口 134a。橫隔们 可f過而添加劑不可穿透過之陽離子交換器 功能膜(中性咖構成。藉由以此方式用 Μ臈188覆蓋調節板ϊ34的開口 用 ❹ 液的添加劑在陽極26表面分解及消耗。 3於鍍 ^ 46圖至第48圖為本發明錢覆裝置之另一 二用=的賴咖 52構成之定由柱形部份50及矩形凸緣部份 内周面上的預=節板保持器是裝設於鍍槽1〇 矩形框之形^ 調節板保持器_係由各具有類似 /[之祕(其比調節板34 =持器⑴一心 大出的大出部份202a。突出 節板3\之凸緣部份52的厚度相同。^度大約與調 内周2式^持讀在其底部及兩侧端衫於鑛槽10的 (hinge pi加可動式㈣器204在其下端係經由叙鏈銷 保持哭2= 旋轉地支承於鑛槽1〇上。當可動式 的底部及兩:二==旋轉時,可動式保持器204 了員部接觸,2二保持器挪之突出部份_的 鞴此在固疋式保持器202與可動式保持器2〇4 320840 36 200936818 ,,可形成-待安置調節板34於其中的向 厚度大約與調節板34之凸緣部份52的厚度相同。門其 ^ ^ 2〇δ^ 便防止電私2 _料料騎器204的下端以 方止電场在可動式保持器204、鐘槽 根據此具體實施例 f之⑴曳露出。 器200,其中,係藉由—里將調即板34固疋於調節板保持 ❹ 可動切括哭―女置調節板34於固定式保持器202、 了動式保持& m之間,並使可動式鱗器 2持器202旋轉以及例如用夾持 );=式 持器204而將綱銘此u 」固疋可動式保 可動式保持器m之間。以Γ方式保持器202與 板保持器-.中,可防止電 式保持器204之間祕出。 呆持盗202與可動The auxiliary adjustment plate mounting member is provided on the anode side surface of the main body portion 138 of the adjustment plate 134. The auxiliary adjustment plate mounting member is fixed at a position corresponding to the peripheral side portion of the auxiliary adjustment plate 170. The pair of side hooks 172a are formed with a pair of bottom hooks 172b fixed to the bottom corners of the auxiliary adjustment plate 170. By placing the auxiliary adjustment plate 170 on the auxiliary adjustment plate mounting member of the adjustment plate 134 (consisting of the pair of side hooks 172a and the pair of bottom hooks 172b), the auxiliary adjustment plate can be placed to be opposed to the adjustment plate 134. At the scheduled location. In this embodiment, an opening 134a# (8 吋 wafer conditioning board) for an 8 吋 wafer is used as the conditioning board 134, and an auxiliary conditioning board having an opening 170a for 6 wafers. (6 吋 wafer conditioning plate) is used as the auxiliary adjustment plate 170. With this configuration, when the substrate W is replaced by an 8-inch wafer (for a wafer, an auxiliary adjustment plate (6-inch wafer conditioning plate) 17A is attached to the adjustment plate (8-inch wafer adjustment plate) 134, that is, This change can be handled without replacing the adjustment plate. The grip opening 170b is provided at the top of the auxiliary adjustment plate 1?. The lateral dimension 't3, t4 and the lower vertical dimension t5 of the overlap between the adjustment plate 134 and the auxiliary adjustment plate 17 are generally not less than 5 mm and not less than 1 Gm. When the auxiliary adjustment plate m is attached to the second 134, this prevents the power line of the anode 26 from passing through the gap of the adjustment plate adjustment plate no and then passing through the opening i3/ of the adjustment plate 134, assisting the opening through the auxiliary adjustment plate 170. a. &' While this particular embodiment uses a combination of eight pairs of wafer conditioning plates and conditioning plates, it is possible to use a combination of any two conditioning plates (second conditioning plates). For example, the second adjustment plate combined with the first adjustment plate can be used when it is necessary to adjust the electric field cloth according to the type of the substrate (the clock cover member) to be used in the case of the use of the first adjustment 320840 34 200936818. Figures 42 and 43 show the main parts of another embodiment of the plating apparatus of the present invention. The plating apparatus of this embodiment differs from the ore coating apparatus of the first embodiment in that the former is used in the top anode holder ❹ adjustment plate 134 (as shown in Fig. 37), and the anode _ n 8 § Zhou Lang board 134 and substrate holder 24 are respectively connected via the clamping portion 8 〇, the clamping portion 14 〇 and the holder arm portion 64 (please refer to the figure, the simple positioning of the top opening of the money (4)/protection ^ : Therefore, it is the holding portion (10) of the pole holder 28 on the positioning/holding portion (four) 2 composed of a single member, the adjusting plate = the ceremony 140, and the holder arm of the substrate holder 24. The central axis of the substrate W fixed by the anode holder 28 and the cylindrical portion 136 of the adjustment plate 134 is overlapped with each other and held by the substrate, although in this embodiment, It is the positioning of the anode holder cow placed on the holding member 182, and the base portion _, the adjustment 6 4 ' however, it is also possible to position the anode holder 2 8 1 section of the arm holder 24 Other parts are located in the positioning/holding part = (4) 4 and the substrate positioning/holding part 182 as a reference. Upper 'As long as the available positioning plate 134 and the vertical positioning holder 28 of the substrate holder 24, the adjustment 44 and 45 illustrate another adjustment plate. _ (4) Add 320840 35 200936818 The adjustment plate 134 shown in Fig. 7. The diaphragm 188 is = C = XingPlate)] 84 and the fixed screw (4) is fixed to the anode side surface (10) of the body portion 38 of the plate 134 to cover the entire central opening 134a. The cation exchanger functional film (which is composed of a neutral coffee) through which the additive is impermeable may be used. In this way, the opening of the adjusting plate 34 is covered with the crucible 188 to decompose and consume the surface of the anode 26 with the additive of the liquid. 3, the plating of 46 to 48 is the other two of the money-covering device of the present invention, which is composed of a cylindrical portion 50 and a pre-section on the inner circumferential surface of the rectangular flange portion. The plate holder is formed in a rectangular frame of a plating tank. The adjustment plate holder is composed of a large portion 202a having a similar/[secret than the adjustment plate 34 = the holder (1). The thickness of the flange portion 52 of the protruding section plate 3 is the same. The degree is about the same as that of the inner circumference of the type 2, and is held at the bottom and the side of the end plate in the ore tank 10 (hinge pi plus movable (four) device 204 The lower end is held by the chain pin 2 = rotatively supported on the mine tank 1 。. When the movable bottom and the two: two == rotation, the movable holder 204 contacts the member, and the second holder moves The protruding portion _ is in the solid-state holder 202 and the movable holder 2〇4 320840 36 200936818, and the adjustment plate 34 to be placed can be formed. The thickness of the flange is about the same as the thickness of the flange portion 52 of the adjusting plate 34. The gate 2 ^ 2 〇 δ ^ prevents the lower end of the material collector 204 from stopping the electric field in the movable holder 204, the bell groove according to the specific embodiment f (1) is exposed. The device 200, wherein the plate 34 is fixed to the adjusting plate by means of the inner lining, and the movable plate is arranged to be crying and the female setting plate 34 is fixed. The holder 202, the movable holding & m, and the movable scale 2 holder 202 is rotated and clamped, for example, with the gripper; 204, the guide holder 204 is fixed and movable. Between the holders m. In the Γ mode holder 202 and the plate holder -., the secret between the electric holders 204 can be prevented.
Q 可藉由下述方式由調節板保持器2q 耳先’鬆開可動式保持器204,然後旋轉可^^即板34 : 離開固定式保持器202,如第48圖所-式保持器204 持器204向上傾斜抽出調節板34。 “、'、後由可動式保 =在鍍槽1G預定位置裝設可拆卸地 此 的调即板保持器200,可簡單快速 々寺調即板34 儘管已用具體實施例來描述本發明,:板34的更換。 =二本發明不受限於上述狀具體實施例',、、=藝者應瞭 洛在本發明概念内的修改。 疋希望涵蓋 【圖式簡單說明】 第1围為本發明鍛覆裝置之—具體實施例的垂直剖面 320840 37 200936818 正視圖; 第2圖為使用於第1圖鍍覆裝置之攪拌槳的平面圖; 第3圖為沿著第2圖之直線A-A繪出的橫截面圖; 第4A圖與第4B圖各自圖示與第3圖對應的攪拌槳變 體; 第5圖的示意圖係圖示第1圖鍍覆裝置的攪拌槳驅動 機構與鍍槽; 第6圖的平面圖係圖示攪拌槳的行程末端(str〇ke ❹ end); 第7圖為使用於第1圖鐘覆裝置之調節板的透視圖; 第8圖為另一調節板的側視圖; 第9圖係圖示第1圖鍍覆裝置之基板保持器與鍍槽之 保持器支架的關係; 第10圖的放大透視圖係圖示第1圖之鍍覆裝置中之保 持器臂部與其附近; ❹ 第11圖的横截面圖係圖示相接觸著的保持器臂部與 保持器支架; 第12圖為第11圖的右側視圖; 第13圖為另一保持器支架的透視圖; 第14圖為使用於第1圖鍍覆裝置之分離板的平面圖; 第15圖為分離板之一變體的平面圖; 第16圖為圖示安裝分離板於第丨圖鍍覆裝置中之鍍槽 之側板上的橫截面圖; 第17圖的透視圖係圖示第!圖鏟覆裝置中之分離板、 320840 38 200936818 屏蔽板及鍍槽底部的關係; 第18圖的透視圖係圖示分離板、屏蔽板及鍍槽底部的 另一個關係; 第19圖的橫截面圖係圖示第丨圖鍍覆裝置中之調節板 的凸緣部份與分離板的關係; 第20圖的鍍槽俯視圖係圖示用可調整調節板與基板 之距離的方式安裝調節板於鍍槽的具體實施例; ❹ ,21圖為用於形成凸塊之鍍銅製程的流程圖; -^ ^ ^ * 式形成的凸塊形狀:以8 ASD的 n X订 _藉纟㈣㈣以平均絕對值等於20 公分/秒的速度移動來攪拌妓;^㈣值專於20 第23圖圖不用以下古斗l 雷沒漆声% —下方式形成的凸塊形狀:以8 ASD的 n又仃又同時藉由使攪拌槳以平均絕對值等於83 公分/秒的速度移動來_舰;^㈣值松83 鍍覆H圖2為毫用米H方式形成的凸塊的顯微照片:在進行 的速度移動來授拌鍍^摔紫以平均絕對值等於4 0公分/秒 第25圖為用以下方式形成的” 鍍覆時使厚4毫米的與“ 〜蹲微如片.在進订 的速度移動來攪拌鍍液; ;40&刀/私 =26圖為用以下方式形成的凸的 鍍覆時使厚4毫米的嬙41 貝儆照片.在進仃 的速度移動來授拌鐵液; 等於67么为/秒 第27圖為用w下方式形成的凸塊軸微照片:在進行 320840 39 200936818 鐘覆時使厚4毫米的攪拌槳以平均絕對值等於83公分/秒 的速度移動來攪拌鍍液; 第28圖為用以下方式形成的凸塊的顯微照片:在進行 鍍覆時使厚3毫米的攪拌槳以平均絕對值等於83公分/秒 的速度移動來攪拌鍍液; 第29圖為用以下方式形成之凸塊的高度在基板之分 布圖:使用不在分離板下裝設屏蔽板的鍍槽來進行鍍覆; 第30圖為用以下方式形成之凸塊的高度在基板之分 布圖:使用在分離板下設有屏蔽板的鐘槽來進行鍍覆; 第31圖的曲線係圖示用以下方式形成之凸塊高度在 基板的面内均勻度:使用在中央有開口且與基板相距35毫 米的5毫米厚扁平調節板來進行鍍覆,同時使攪拌槳以平 均絕對料於20公分/秒的速度移動紐雜液; 第32圖的曲線係圖示用以下方式形成之凸塊高度在 基板的面内均句度:使用與基板相距15毫米的第7圖所示 ©之調節板來騎《,㈣使獅—平觸對值等於⑽ 公分/秒的速度移動來攪拌鍍液; 第33圖圖示第31圖及第犯圖所指的X軸與γ軸; 帛34圖為本發明鍍覆裝置之另一具體實施例的垂直 剖面正視圖; =35圖的平面圖係圖示另—搜拌紫驅動機構與鑛槽; 36圖為第35圖的垂直剖面正視圖; 機槿圖的垂直剖面側視圖係圖示設有一調節板移動 機構的另-調節板與另一鑛槽; 320840 40 200936818 t 第38圖為沿著第37圖之直線B-B繪出的橫截面圖; 第39圖圖示設有另一調節板移動機構的調節板之主 要部份; 第40圖為另一調節板的前視圖; 第41圖為第40圖的平面圖; 第42圖為本發明鍍覆裝置之另一具體實施例的垂直 剖面正視圖; 第43圖的前視圖係圖示使用於第42圖所示之鍍覆裝 ® 置的陽極保持器與定位/保持部件; 第44圖為另一調節板的前視圖; 第45圖為沿著第44圖之直線C-C繪出的橫截面圖; 第46圖為本發明鍍覆裝置之另一具體實施例的垂直 剖面正視圖; 第47圖的橫截面視圖係圖示第46圖所示之鍍覆裝置 的調節板保持器與調節板;以及 _ 第48圖的剖視圖係圖示在調節板由調節板保持器釋 出時的調節板保持器。 【主要元件符號說明】 10 鍍槽 10a 侧板 12 溢流槽 14 泵 16 鍍液供給路線 16a, 16fc 1 分叉路線 18 鍍液供給入口 20 恆溫單元 22 過滤器 24 基板保持 26 陽極 28 陽極保持器 41 320840 200936818 30 鍍覆電源 32 攪拌槳 32a 狹缝 32b 條狀部份 34,134 調節板 36 夾子 38 軸桿 38a, 38b 右端及左端軸桿 38c 中間軸桿 40 軸桿保持器 42 攪拌槳驅動部件 44 馬達 46 控制部件 50 柱形部份 50a 部份 52 矩形凸緣部份 ® 60 保持器夾钳 62 保持支架 62a 溝狀開口 64 保持器臂部 66 臂側接點 68 支架侧接點 70 臂側磁石 72 支架側磁石 80 分離板 80a 鍍液通行孔 82 屏蔽板 82a 半圓形開口 84 基板處理室 86 鍍液分佈室 © 90 分離板支架 92 襯塾 94, 100 電場屏蔽構件 96 調節板固定用開缝板 96a,96t 1 狹缝 98 固定螺絲 110 陽極側溶液分佈室 112 陰極側溶液分佈室 114 主閥 116 流量計 118a, 118b 閥 120 攪拌槳保持構件 122a, 122b 聯結器 130 内槽 132 外槽 134a, 170a 開口 42 320840 200936818 136 柱形部份 138 矩形板狀主體 140 夾持部份 142, 160 調節板移動 144 調節板支架 146 托架 148 橫向壓入螺栓 150 橫向固定螺栓 152 導引構件 152a 溝狀凹槽 154 密封保持構件 156 固定螺栓 158 電場屏蔽構件 162 垂直壓入螺栓 164 垂直固定螺检 170 輔助調節板 ® 170b 夾持開口 172a 側鉤 172b 底鉤 180 寬夹持部份 182 定位/保持部件 184 固定板 186 固定螺栓 188 橫隔膜 200 調節板保持器 202 固定式保持器 202a 突出部份 204 可動式保持器 206 鉸鏈鎖 208 電場屏蔽構件 ❿B 寬度 Η 橫向長度 Li, L2 垂直長度 Q 鍵液 W 基板(鍍覆物件) St往復距離 t 厚度(板厚) θ 傾斜角 tl 移動間隙 t2 間隙 t3, t4 橫向尺寸 t5 下部垂直尺寸 43 320840Q can be 'released from the adjustment plate holder 2q' by first releasing the movable holder 204, and then rotating the plate 34: away from the fixed holder 202, as shown in Fig. 48. The holder 204 is tilted upward to pull out the adjustment plate 34. "," followed by movable protection = detachably arranging the detachable plate holder 200 at a predetermined position of the plating tank 1G, which can be simply and quickly adjusted to the board 34. Although the invention has been described in terms of specific embodiments, : Replacement of the plate 34. = 2 The present invention is not limited to the above-described specific embodiment ',, = = the artist should modify the concept within the concept of the invention. 疋 wish to cover [simple description of the schema] A vertical section of the forging device of the present invention is a front view of a vertical section 320840 37 200936818; a second drawing is a plan view of a stirring paddle used in the plating apparatus of FIG. 1; and a third drawing is taken along a line AA of FIG. A cross-sectional view of the drawing; FIG. 4A and FIG. 4B each illustrate a stirring paddle variant corresponding to FIG. 3; and FIG. 5 is a schematic view showing a paddle driving mechanism and a plating tank of the plating apparatus of FIG. 1; The plan view of Fig. 6 is a view showing the stroke end of the stirring paddle; the seventh drawing is a perspective view of the adjusting plate used in the first drawing device; the eighth drawing is the side of the other adjusting plate. Figure 9 is a diagram showing the substrate holder of the plating apparatus of Fig. 1 and the holder of the plating tank. FIG. 10 is an enlarged perspective view showing the holder arm portion of the plating apparatus of FIG. 1 and its vicinity; 横截 The cross-sectional view of FIG. 11 is a view showing the holder arm and the holder that are in contact with each other. Figure 12 is a right side view of Figure 11; Figure 13 is a perspective view of another holder holder; Figure 14 is a plan view of the separation plate used in the plating apparatus of Figure 1, and Figure 15 is a separation plate A plan view of one of the variants; Fig. 16 is a cross-sectional view showing the side plate of the plating tank in which the separating plate is mounted in the first plating apparatus; the perspective view of Fig. 17 is a plan view of the scraping device Separation plate in the middle, 320840 38 200936818 The relationship between the shielding plate and the bottom of the plating tank; The perspective view in Fig. 18 shows another relationship between the separating plate, the shielding plate and the bottom of the plating tank; the cross-sectional view of Fig. 19 is a diagram The relationship between the flange portion of the adjusting plate in the first plating device and the separating plate; the top view of the plating groove in Fig. 20 shows the specific arrangement of the adjusting plate in the plating tank by adjusting the distance between the adjusting plate and the substrate Embodiments; ❹ , 21 is a copper plating process for forming bumps Cheng;; ^ ^ ^ * Formed bump shape: 8 ASD n X order _ 纟 (4) (four) to move at an average absolute value equal to 20 cm / sec; ^ (four) value for 20 23 The figure does not need to use the following antiques: No lacquer %% - the shape of the bump formed in the following way: at 8 ASD n and at the same time by moving the paddle at an average absolute value equal to 83 cm / sec ;^(四)值松83 Plating HFig.2 is a photomicrograph of a bump formed by the millimeter H method: the moving speed is applied to the plating, and the average absolute value is equal to 40 cm/sec. The picture is formed in the following manner: "When plating, make a thickness of 4 mm and "~ 蹲 micro as a piece. Move at a speed of the order to stir the plating solution; 40 & knife / private = 26 figure is formed in the following manner Convex plating makes a 4 mm thick 嫱41 儆 儆 photo. Move at the speed of the enthalpy to teach the mixing of molten iron; equal to 67 y / s. Figure 27 is a micrograph of the bump axis formed by w: Stir the plating solution with a 4 mm thick paddle at an average absolute value of 83 cm/sec while performing a 320840 39 200936818 clock cover; Figure 28 is a photomicrograph of a bump formed by moving a paddle having a thickness of 3 mm at a speed of an average absolute value of 83 cm/sec to agitate the plating solution when plating; Figure 29 shows the following: The distribution of the height of the bump formed by the method on the substrate: plating is performed using a plating tank in which the shielding plate is not disposed under the separating plate; FIG. 30 is a distribution diagram of the height of the bump formed in the following manner on the substrate: use The bell groove of the shielding plate is provided under the separating plate for plating; the curve of Fig. 31 shows the uniformity of the height of the bump formed in the following manner in the in-plane of the substrate: the opening is opened in the center and is spaced from the substrate 35 A 5 mm thick flat adjustment plate of millimeters is used for plating, while the agitating paddle is moved at an average of 20 cm/sec. The curve of Fig. 32 shows the height of the bump formed in the following manner. In-plane uniformity of the substrate: use the adjustment plate shown in Figure 7 at a distance of 15 mm from the substrate to ride ", (4) to move the plating solution by moving the lion-flat contact value equal to (10) cm/sec; Figure 33 shows the 31st map and the first map The X-axis and the γ-axis are referred to; the 帛34 diagram is a vertical cross-sectional front view of another embodiment of the plating apparatus of the present invention; the plan view of the =35 diagram is an illustration of another-purchasing mechanism and a mining tank; a vertical cross-sectional front view of Fig. 35; a vertical cross-sectional side view of the machine diagram showing another adjustment plate with an adjustment plate moving mechanism and another mining tank; 320840 40 200936818 t Figure 38 is along the 37th The cross-sectional view of the straight line BB of the figure; the 39th part shows the main part of the adjusting plate provided with another adjusting plate moving mechanism; the 40th is the front view of the other adjusting plate; the 41st is the 40th Figure 42 is a plan view; Fig. 42 is a vertical sectional front view showing another embodiment of the plating apparatus of the present invention; and Fig. 43 is a front view showing the anode holding used in the plating apparatus shown in Fig. 42. And the positioning/holding member; Fig. 44 is a front view of another adjusting plate; Fig. 45 is a cross-sectional view taken along line CC of Fig. 44; Fig. 46 is another drawing of the plating device of the present invention A vertical cross-sectional front view of a specific embodiment; a cross-sectional view of FIG. 47 is a cross-sectional view of FIG. The adjustment plate holder and adjustment plate of the illustrated plating apparatus; and the sectional view of Fig. 48 illustrate the adjustment plate holder when the adjustment plate is released by the adjustment plate holder. [Main component symbol description] 10 plating tank 10a side plate 12 overflow tank 14 pump 16 plating liquid supply route 16a, 16fc 1 bifurcation route 18 plating liquid supply inlet 20 thermostatic unit 22 filter 24 substrate holding 26 anode 28 anode holder 41 320840 200936818 30 Plated power supply 32 Stirring paddle 32a Slit 32b Strip 34,134 Adjusting plate 36 Clamp 38 Shaft 38a, 38b Right and left end shaft 38c Intermediate shaft 40 Shaft retainer 42 Stirring paddle drive unit 44 Motor 46 Control part 50 Cylindrical part 50a Part 52 Rectangular flange part® 60 Retainer clamp 62 Retaining bracket 62a Grooved opening 64 Retainer arm 66 Arm side contact 68 Bracket side contact 70 Arm side magnet 72 Bracket side magnet 80 Separation plate 80a Plating liquid passage hole 82 Shielding plate 82a Semicircular opening 84 Substrate processing chamber 86 Plating solution distribution chamber © 90 Separation plate holder 92 Lining 94, 100 Electric field shielding member 96 Adjusting plate fixing opening plate 96a, 96t 1 slit 98 fixing screw 110 anode side solution distribution chamber 112 cathode side solution distribution chamber 114 main valve 116 flow meter 118a, 118b valve 120 Agitating paddle retaining members 122a, 122b Coupling 130 Inner groove 132 Outer groove 134a, 170a Opening 42 320840 200936818 136 Cylindrical portion 138 Rectangular plate body 140 Clamping portion 142, 160 Adjustment plate movement 144 Adjustment plate bracket 146 Bracket 148 Transverse press-in bolt 150 Transverse fixing bolt 152 Guide member 152a Grooved groove 154 Sealing retaining member 156 Fixing bolt 158 Electric field shielding member 162 Vertical press-in bolt 164 Vertical fixing screw 170 Auxiliary adjustment plate ® 170b Clamping opening 172a side Hook 172b bottom hook 180 wide clamping portion 182 positioning/holding member 184 fixing plate 186 fixing bolt 188 diaphragm 200 adjusting plate holder 202 fixed holder 202a protruding portion 204 movable holder 206 hinge lock 208 electric field shielding member ❿B Width Η Lateral length Li, L2 Vertical length Q Key liquid W Substrate (plated object) St reciprocating distance t Thickness (plate thickness) θ Tilt angle tl Moving gap t2 Clearance t3, t4 Transverse dimension t5 Lower vertical dimension 43 320840
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| JP2007313730 | 2007-12-04 | ||
| JP2008292174A JP5184308B2 (en) | 2007-12-04 | 2008-11-14 | Plating apparatus and plating method |
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| TWI457471B TWI457471B (en) | 2014-10-21 |
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| JP (5) | JP5184308B2 (en) |
| KR (3) | KR101493380B1 (en) |
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| CN104562162B (en) * | 2013-10-21 | 2018-03-23 | 欣兴电子股份有限公司 | diaphragm device |
| TWI677928B (en) * | 2014-05-26 | 2019-11-21 | 日商荏原製作所股份有限公司 | Substrate electrolytic processing apparatus and paddle for use in such substrate electrolytic processing apparatus |
Also Published As
| Publication number | Publication date |
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| JP5726921B2 (en) | 2015-06-03 |
| KR20090058466A (en) | 2009-06-09 |
| CN101451264A (en) | 2009-06-10 |
| JP5213669B2 (en) | 2013-06-19 |
| JP2013122091A (en) | 2013-06-20 |
| CN101451264B (en) | 2013-01-23 |
| JP2015145537A (en) | 2015-08-13 |
| JP2013064202A (en) | 2013-04-11 |
| CN108588800B (en) | 2020-07-07 |
| JP2009155726A (en) | 2009-07-16 |
| KR20140130645A (en) | 2014-11-11 |
| KR101486441B1 (en) | 2015-01-28 |
| JP5572229B2 (en) | 2014-08-13 |
| KR101493380B1 (en) | 2015-02-23 |
| KR101515120B1 (en) | 2015-04-24 |
| JP5184308B2 (en) | 2013-04-17 |
| JP2009155727A (en) | 2009-07-16 |
| KR20140133788A (en) | 2014-11-20 |
| CN105420778A (en) | 2016-03-23 |
| TWI457471B (en) | 2014-10-21 |
| CN108588800A (en) | 2018-09-28 |
| CN103060871A (en) | 2013-04-24 |
| CN107604426B (en) | 2019-08-30 |
| CN103060871B (en) | 2015-11-25 |
| CN107604426A (en) | 2018-01-19 |
| JP5980983B2 (en) | 2016-08-31 |
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