TWI457471B - Plating device and plating method - Google Patents
Plating device and plating method Download PDFInfo
- Publication number
- TWI457471B TWI457471B TW097147071A TW97147071A TWI457471B TW I457471 B TWI457471 B TW I457471B TW 097147071 A TW097147071 A TW 097147071A TW 97147071 A TW97147071 A TW 97147071A TW I457471 B TWI457471 B TW I457471B
- Authority
- TW
- Taiwan
- Prior art keywords
- plating
- anode
- holder
- plate
- paddle
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/008—Current shielding devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Automation & Control Theory (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本發明係有關用於實施鍍覆物件(基板)(例如,半導體晶圓片)之表面鍍覆的鍍覆裝置及鍍覆方法,且更特別的是關於可用於形成鍍膜於設在半導體晶圓片表面之精細互連凹部或小孔或光阻開口中、或用於在半導體晶圓片表面上形成用以電氣連接至例如封裝件之電極的凸塊(突出電極)的鍍覆裝置及鍍覆方法。The present invention relates to a plating apparatus and a plating method for performing surface plating of a plated article (substrate) (for example, a semiconductor wafer), and more particularly to a film that can be used for forming a plating film on a semiconductor wafer. a plating device and a plating device for forming a bump (protrusion electrode) for electrically connecting to an electrode such as a package on a surface of a semiconductor wafer, or a fine hole or a small hole or a photoresist opening in the surface of the chip Overlay method.
例如,TAB(捲帶式自動接合)或覆晶封裝(flip chip)通常要在半導體晶片(有互連形成於其中)表面的預定部份(電極)處形成由金、銅、錫或鎳或多層該等金屬製成的突出型連接電極(凸塊),藉此該半導體晶片可經由該等凸塊電氣連接至封裝件的電極或TAB電極。有各種方法可用來形成凸塊,例如電鍍法、氣相沉積法、印製法以及植球法(ball bumping)。其中,隨著半導體晶片的I/O數增加及電極間距變小,最常用的方法為可形成精細凸塊以及可相對穩定地完成的電鍍法。For example, TAB (Tape Automated Bonding) or flip chip is usually formed of gold, copper, tin or nickel at a predetermined portion (electrode) of the surface of a semiconductor wafer (with interconnects formed therein) or A plurality of protruding connection electrodes (bumps) made of the metal, whereby the semiconductor wafer can be electrically connected to the electrodes or TAB electrodes of the package via the bumps. There are various methods for forming bumps such as electroplating, vapor deposition, printing, and ball bumping. Among them, as the number of I/Os of the semiconductor wafer increases and the electrode pitch becomes smaller, the most common method is a plating method which can form fine bumps and can be relatively stably completed.
用電鍍法可輕易得到高純度的金屬膜(鍍膜)。此外,電鍍法不只能以相對高的速率形成金屬膜,也可相對輕易地控制金屬膜的厚度。在半導體晶圓片上形成金屬膜時,需嚴格要求金屬膜的厚度之面內均勻度(in-plane uniformity)以便實現高密度封裝、高效能及高良率。若用電鍍法來形成金屬膜時,可使金屬離子饋送速率和鍍液的電位有均勻的分布。因此,預料電鍍法能夠得到有優異厚度之面內均勻度的金屬膜。A high-purity metal film (coating film) can be easily obtained by electroplating. Further, the plating method can not only form the metal film at a relatively high rate, but also relatively easily control the thickness of the metal film. When a metal film is formed on a semiconductor wafer, the in-plane uniformity of the thickness of the metal film is strictly required in order to achieve high-density packaging, high efficiency, and high yield. When the metal film is formed by electroplating, the metal ion feed rate and the potential of the plating solution can be uniformly distributed. Therefore, it is expected that a plating method can obtain a metal film having an in-plane uniformity of an excellent thickness.
在使用所謂浸漬法的鍍覆裝置中,已知有一種鍍覆裝置係包含:用於容納鍍液的鍍槽;用於垂直地保持基板(鍍覆物件)並藉此水密性密封其周邊部份的基板保持器;陽極,其係用一陽極保持器被垂直地保持且經配置成是面對著在該鍍槽中的基板;由電介質材料製成且有一中央孔的調節板(regulation plate),其係經配置成位在該陽極與該基板之間;以及,配置於該調節板與該基板之間的攪拌槳(paddle),用於攪拌該鍍液(請參考,例如,國際公開號:世界專利第WO 2004/009879號小冊子,專利文獻1)。In a plating apparatus using a so-called impregnation method, there is known a plating apparatus comprising: a plating tank for accommodating a plating solution; for vertically holding a substrate (plating object) and thereby sealing a peripheral portion thereof by watertightness a substrate holder; an anode that is vertically held by an anode holder and configured to face the substrate in the plating tank; a regulation plate made of a dielectric material and having a central aperture Is configured to be positioned between the anode and the substrate; and a paddle disposed between the conditioning plate and the substrate for agitating the plating solution (please refer to, for example, international disclosure) No.: World Patent No. WO 2004/009879 pamphlet, Patent Document 1).
在專利文獻1所述之鍍覆裝置的操作中,陽極、基板及調節板均沉浸於鍍槽的鍍液中,同時經由導線將該陽極連接至鍍覆電源的陽極以及將該基板連接至該鍍覆電源的陰極,並在該陽極與該基板之間施加一預定鍍覆電壓,藉此沉積金屬並形成金屬膜(鍍膜)於基板表面上。在鍍覆期間,用配置於調節板、基板之間的攪拌槳攪拌該鍍液以便均勻地供給足夠數量的離子至基板,藉此可形成厚度更加均勻的金屬膜。In the operation of the plating apparatus described in Patent Document 1, the anode, the substrate, and the adjustment plate are both immersed in the plating bath of the plating tank while the anode is connected to the anode of the plating power source via a wire and the substrate is connected thereto. A cathode of the power source is plated, and a predetermined plating voltage is applied between the anode and the substrate, thereby depositing a metal and forming a metal film (coating) on the surface of the substrate. During the plating, the plating solution is stirred with a stirring pad disposed between the conditioning plate and the substrate to uniformly supply a sufficient amount of ions to the substrate, whereby a metal film having a more uniform thickness can be formed.
根據專利文獻1的鍍覆裝置,鍍槽的電位分布可用置於陽極、在陽極對面的基板之間且在柱形主體中有鍍液通道的調節板來控制。這使得對形成於基板表面之金屬膜的厚度分布的控制成為有可能。According to the plating apparatus of Patent Document 1, the potential distribution of the plating tank can be controlled by an adjustment plate placed between the anode, the substrate opposite the anode, and the plating channel in the cylindrical body. This makes it possible to control the thickness distribution of the metal film formed on the surface of the substrate.
此外,已有人提出一種鍍覆裝置,其係藉由最小化均沉浸於鍍槽中之鍍液的調節板及鍍覆物件的距離,從而可讓鍍覆物件整個表面有更加均勻之電位分布,藉此形成有更加均勻厚度的金屬膜(請參考,例如,日本專利早期公開公布號:2001-329400,專利文獻2)。In addition, a plating apparatus has been proposed which minimizes the potential of the entire surface of the plated article by minimizing the distance between the regulating plate and the plated article which are immersed in the plating bath. Thereby, a metal film having a more uniform thickness is formed (refer to, for example, Japanese Patent Laid-Open Publication No. 2001-329400, Patent Document 2).
目前,為了增加生產力,人們強烈要求要把用於形成有給定厚度之鍍膜的鍍覆時間縮短到習知鍍覆時間的三分之二左右。為了在較短的時間內形成有給定厚度及給定鍍覆面積的鍍膜,必須藉由施加較高的電流(亦即,較高的電流密度)來以較快的鍍覆速率進行鍍覆。不過,如果使用習知常用鍍覆裝置及其操作方法在高電流密度條件下進行鍍覆的話,鍍膜厚度的面內均勻度會有變差的傾向。人們要求鍍膜厚度要有比以前更高程度的面內均勻度。因此,如專利文獻2所述,縮短調節板與鍍覆物件的距離對於在高電流密度鍍覆條件下進行鍍覆是很重要的。At present, in order to increase productivity, it is strongly required to shorten the plating time for forming a coating having a given thickness to about two-thirds of the conventional plating time. In order to form a coating having a given thickness and a given plating area in a relatively short period of time, it is necessary to perform plating at a faster plating rate by applying a higher current (i.e., a higher current density). However, if the conventional plating apparatus and its operation method are used for plating under a high current density condition, the in-plane uniformity of the coating thickness tends to be deteriorated. The thickness of the coating is required to have a higher degree of in-plane uniformity than before. Therefore, as described in Patent Document 2, shortening the distance between the adjustment plate and the plated article is important for plating under high current density plating conditions.
本發明人已發現,當使用習知常用鍍覆裝置及其操作方法在高電流密度條件下進行鍍覆時,鍍覆所形成的凸塊會有具有凸形頂部而不是平頂的傾向。形成此種凸頂型凸塊會導致下列問題:就目前還在研發的WL-CSP(晶元級晶片尺寸封裝)而言,在用鍍覆法形成凸塊後,凸塊會被樹脂所塗覆。如果凸塊呈凸頂狀,必須塗上過多量的樹脂以覆蓋整個凸塊,這會增加成本。在塗佈樹脂後,通常用所謂刮板(squeegee)的刮刀來整平樹脂表面。在用刮刀(刮板)整平樹脂表面時,有凸頂的高凸塊可能會倒塌。在用樹脂塗覆凸塊後,通常也會用機械研磨法把樹脂及凸塊磨到預定的厚度。如果凸塊有凸頂而因此塗上過量的樹脂,則必須磨掉多餘的樹脂,這會導致成本增加。The present inventors have discovered that when plating is performed under high current density conditions using conventional conventional plating apparatus and its method of operation, the bumps formed by plating tend to have a convex top rather than a flat top. The formation of such a convex-type bump causes the following problems: in the case of the WL-CSP (Crystal Scale Wafer Size Package) currently under development, after the bump is formed by the plating method, the bump is coated with the resin. cover. If the bumps are convex, an excessive amount of resin must be applied to cover the entire bump, which increases the cost. After the resin is applied, the surface of the resin is usually flattened with a so-called squeegee blade. When the surface of the resin is flattened with a doctor blade (scraper), the high bump having a convex top may collapse. After the bumps are coated with a resin, the resin and the bumps are usually ground to a predetermined thickness by mechanical grinding. If the bumps have a convex top and thus an excessive amount of resin is applied, the excess resin must be worn away, which leads to an increase in cost.
已有人提出一種鍍覆裝置及方法,其係在進行具有通孔之印刷電路板的鍍覆之同時在鍍液中驅動一對攪拌桿(一支的速度為5公分/秒至20公分/秒,而另一支為25公分/秒至70公分/秒)(請參考,例如,日本早期公開公布號:2006-41172,專利文獻3)。不過,若是在進行鍍覆時使這對攪拌桿各以該等速度移動的話,仍然無法形成具有平頂的凸塊。A plating apparatus and method have been proposed which drive a pair of stirring rods in a plating solution while performing plating of a printed circuit board having through holes (one speed of 5 cm/sec to 20 cm/sec) The other one is 25 cm/sec to 70 cm/sec. (For example, Japanese Laid-Open Publication No.: 2006-41172, Patent Document 3). However, if the pair of stirring rods are moved at these speeds during plating, it is still impossible to form a bump having a flat top.
鑑於上述先前技術的情況,吾等已做成本發明。因此,本發明的目標是要提供一種鍍覆裝置及鍍覆方法,在進行鍍覆物件(基板)(例如,半導體晶圓片)的鍍覆時,其係可形成具有平頂的凸塊或可形成有優良面內均勻度的金屬膜,即使在高電流密度條件下進行鍍覆亦然。In view of the above prior art, we have made cost inventions. Accordingly, it is an object of the present invention to provide a plating apparatus and a plating method which can form a bump having a flat top when performing plating of a coated object (substrate) (for example, a semiconductor wafer) A metal film having excellent in-plane uniformity can be formed, even if it is plated under conditions of high current density.
為了達成該目標,本發明提供一種鍍覆裝置,其係包含:用於容納鍍液的鍍槽;陽極,其係待沉浸於在該鍍槽內的該鍍液中;保持器,其係用於保持鍍覆物件以及將該鍍覆物件配置於與該陽極相對向的位置;攪拌槳,其係經配置在該陽極和被該保持器保持著的該鍍覆物件之間,並且與該鍍覆物件呈平行地往復移動以攪拌該鍍液;以及,控制部件(control section),用於控制用以驅動該攪拌槳的攪拌槳驅動部件。該控制部件係控制該攪拌槳驅動部件使得該攪拌槳以平均絕對值為70公分/秒至100公分/秒的速度移動。In order to achieve the object, the present invention provides a plating apparatus comprising: a plating tank for containing a plating solution; an anode to be immersed in the plating solution in the plating tank; and a retainer for use And maintaining the plated article and the plated article at a position opposite to the anode; the paddle is disposed between the anode and the plated article held by the holder, and is plated The covering member reciprocates in parallel to agitate the plating solution; and a control section for controlling the agitating paddle driving member for driving the agitating paddle. The control unit controls the paddle drive unit such that the paddle moves at an average absolute value of 70 cm/sec to 100 cm/sec.
藉由使配置在該陽極與該鍍覆物件之間的攪拌槳例如以平均絕對值為70公分/秒至100公分/秒的(高)速度來移動以藉此攪拌該鍍液,可均勻地供給足夠數量的離子至先前已形成之用於凸塊形成的阻劑孔,這使得有可能形成具有平頂的凸塊,即使是在高電流密度條件下進行鍍覆亦然。By uniformly moving the stirring pad disposed between the anode and the plated article at a (high) speed of an average absolute value of 70 cm/sec to 100 cm/sec to thereby agitate the plating solution, uniformly A sufficient amount of ions is supplied to the previously formed resist holes for bump formation, which makes it possible to form bumps having flat tops, even when plated under high current density conditions.
該攪拌槳最好為具有數個條形部份的板狀構件。該板狀構件以具有3毫米至5毫米的厚度為較佳。The agitating paddle is preferably a plate-like member having a plurality of strip portions. The plate member is preferably a thickness of from 3 mm to 5 mm.
該攪拌槳之每一條形部份較宜為相對於平行於該鍍覆物件的垂直平面傾斜30度至60度,以40度至50度更佳。Preferably, each strip portion of the paddle is inclined by 30 to 60 degrees with respect to a vertical plane parallel to the plated article, and more preferably 40 to 50 degrees.
該攪拌槳之每一條形部份以具有2毫米至8毫米的寬度為較佳,以3毫米至6毫米更佳。Each strip portion of the stirring paddle preferably has a width of 2 mm to 8 mm, more preferably 3 mm to 6 mm.
較佳地,該攪拌槳與該鍍覆物件的距離為5毫米至11毫米。Preferably, the distance between the stirring paddle and the plated article is 5 mm to 11 mm.
在本發明之一較佳方面中,該鍍覆裝置更包含配置在該陽極與該攪拌槳之間且由電介質材料製成的調節板。該調節板包含:內徑配合該鍍覆物件之輪廓的柱形部份;以及連接至該柱形部份之陽極側外周端(anode-side peripheral end)的凸緣部份,用於調節形成於該陽極與該鍍覆物件之間的電場。In a preferred aspect of the invention, the plating apparatus further includes an adjustment plate disposed between the anode and the stirring paddle and made of a dielectric material. The adjustment plate includes: a cylindrical portion having an inner diameter matching the contour of the plated article; and a flange portion connected to an anode-side peripheral end of the cylindrical portion for adjusting the formation An electric field between the anode and the plated article.
在該陽極與該攪拌槳之間設有調節板可讓鍍覆物件的整個表面有更加均勻之電位分布。這使得能提高形成於該鍍覆物件上之金屬膜(鍍膜)的面內均勻度,即使是在高電流密度鍍覆條件下形成該金屬膜亦然。An adjustment plate is provided between the anode and the agitating paddle to provide a more uniform potential distribution across the entire surface of the plated article. This makes it possible to improve the in-plane uniformity of the metal film (coating film) formed on the plated article, even if the metal film is formed under high current density plating conditions.
該鍍覆物件與該調節板之該柱形部份之鍍覆物件側端部的距離以8毫米至25毫米為較佳,以12毫米至18毫米更佳。The distance between the plated article and the side end of the plated article of the cylindrical portion of the adjustment plate is preferably from 8 mm to 25 mm, more preferably from 12 mm to 18 mm.
在本發明之一較佳方面中,該保持器具有向外突出的保持器臂部(holder arm),以及該鍍槽具有保持器支架(holder support),用於與該保持器臂部接觸以懸掛及支承該保持器於其上。在該保持器臂部與該保持器支架的接觸區域中設有固定構件,用來將該保持器臂部固定於該保持器支架。In a preferred aspect of the invention, the holder has an outwardly projecting holder arm, and the plating tank has a holder support for contacting the holder arm Suspend and support the retainer thereon. A fixing member is provided in a contact area of the holder arm portion with the holder bracket for fixing the holder arm portion to the holder bracket.
藉此結構,可防止被懸掛及支承於該鍍槽上的保持器搖擺或傾斜,即使該保持器承受因該攪拌槳之高速移動而引起之鍍液流動的反向壓力亦然。With this configuration, it is possible to prevent the retainer suspended and supported on the plating tank from rocking or tilting even if the retainer is subjected to the reverse pressure of the plating liquid flow caused by the high-speed movement of the stirring blade.
較佳地,該固定構件為裝設於該保持器臂部與該保持器支架中之至少一者的磁石。使用磁力可確保優良的固定。Preferably, the fixing member is a magnet mounted on at least one of the holder arm portion and the holder bracket. The use of magnetic force ensures excellent fixation.
在本發明之一較佳方面中,該保持器臂部與該保持器支架至少在彼等之接觸區的一部份中具有在該保持器被懸掛及支承於該鍍槽上時會相互接觸及閉合的接點,而在該等接點閉合時允許供電至該鍍覆物件。In a preferred aspect of the present invention, the retainer arm portion and the retainer bracket are in contact with each other at least in a portion of their contact area when the retainer is suspended and supported on the plating tank. And closed contacts, and power is supplied to the plated article when the contacts are closed.
在該保持器被懸掛及支承於該鍍槽上時,這可確保該保持器臂部的接點與該保持器支架的接點之間有優良的接觸。This ensures excellent contact between the contacts of the retainer arms and the contacts of the retainer bracket when the retainer is suspended and supported on the plating tank.
本發明也提供一種鍍覆方法,其係包含:在鍍槽的鍍液中彼此相對地配置陽極與鍍覆物件;以及,使配置於該陽極與該鍍覆物件之間的攪拌槳以與該鍍覆物件平行之方式以平均絕對值為70公分/秒至100公分/秒的速度往復移動,同時在該陽極與該鍍覆物件之間施加一電壓。The present invention also provides a plating method comprising: arranging an anode and a plated article opposite to each other in a plating bath of a plating tank; and: agitating the paddle disposed between the anode and the plated article The plated articles are reciprocated in a parallel manner at an average absolute value of 70 cm/sec to 100 cm/sec while a voltage is applied between the anode and the plated article.
該攪拌槳最好為具有數個條形部份的板狀構件。該板狀構件以具有3毫米至5毫米的厚度為較佳。The agitating paddle is preferably a plate-like member having a plurality of strip portions. The plate member is preferably a thickness of from 3 mm to 5 mm.
該攪拌槳之每一條形部份較宜為相對於平行於該鍍覆物件的垂直平面傾斜30度至60度,以40度至50度更佳。Preferably, each strip portion of the paddle is inclined by 30 to 60 degrees with respect to a vertical plane parallel to the plated article, and more preferably 40 to 50 degrees.
該攪拌槳之每一條形部份以具有2毫米至8毫米的寬度為較佳,以3毫米至6毫米更佳。Each strip portion of the stirring paddle preferably has a width of 2 mm to 8 mm, more preferably 3 mm to 6 mm.
較佳地,該攪拌槳與該鍍覆物件的距離為5毫米至11毫米。Preferably, the distance between the stirring paddle and the plated article is 5 mm to 11 mm.
在本發明之一較佳方面中,在該陽極與該攪拌槳之間配置由電介質材料製成的調節板。該調節板包含:內徑配合該鍍覆物件之輪廓的柱形部份;以及連接至該柱形部份之陽極側外周端的凸緣部份,用於調節形成於該陽極與該鍍覆物件之間的一電場。In a preferred aspect of the invention, an adjustment plate made of a dielectric material is disposed between the anode and the agitating paddle. The adjustment plate includes: a cylindrical portion having an inner diameter matching the contour of the plated article; and a flange portion connected to the outer peripheral end of the anode portion of the cylindrical portion for adjusting the anode and the plated article An electric field between.
該鍍覆物件與該調節板之該柱形部份之鍍覆物件側端部的距離以8毫米至25毫米為較佳,以12毫米至18毫米更佳。The distance between the plated article and the side end of the plated article of the cylindrical portion of the adjustment plate is preferably from 8 mm to 25 mm, more preferably from 12 mm to 18 mm.
本發明也提供一種鍍覆裝置,其係包含:用於容納鍍液的鍍槽;陽極,其係待沉浸於在該鍍槽內的該鍍液中;保持器,其係用於保持鍍覆物件以及將該鍍覆物件配置於與該陽極相對向的位置;攪拌槳,其係經配置在該陽極和被該保持器保持著的該鍍覆物件之間,並且與該鍍覆物件呈平行地往復移動以攪拌該鍍液;以及,控制部件,其係用於控制用以驅動該攪拌槳的攪拌槳驅動部件。該鍍槽是藉由具有許多鍍液通行孔的分離板(separation plate)分隔成鍍覆物件處理室與鍍液分佈室。該鍍液分佈室設有屏蔽板(shield plate),用於調節電場同時確保該鍍液之分散式流動。The present invention also provides a plating apparatus comprising: a plating tank for containing a plating solution; an anode to be immersed in the plating solution in the plating tank; and a holder for maintaining plating And the object is disposed at a position opposite to the anode; the stirring paddle is disposed between the anode and the plated article held by the holder, and is parallel to the plated article Reciprocatingly moving to agitate the plating solution; and control means for controlling a paddle driving member for driving the agitating paddle. The plating tank is separated into a plating object processing chamber and a plating liquid distribution chamber by a separation plate having a plurality of plating liquid passage holes. The plating solution distribution chamber is provided with a shield plate for adjusting the electric field while ensuring the dispersed flow of the plating solution.
藉由以此方式用該分離板來把該鍍槽分隔成該上部鍍覆物件處理室與該下部鍍液分佈室,以及在該鍍液分佈室裝設該屏蔽板以抑制在該鍍液分佈室中形成由該陽極朝向鍍覆物件的電場,如此即可防止在該鍍覆物件下方形成電場,從而可防止電場影響鍍膜的面內均勻度。當在習知低電流密度條件下進行鍍覆時,在鍍覆物件下方形成的電場對於鍍膜之面內均勻度的影響不會成問題。另一方面,在高電流密度條件的情形下,此一電場的影響會造成問題,這是因為鍍膜之靠近鍍槽底部的部份之厚度會快速增加之故。By separating the plating tank into the upper plating material processing chamber and the lower plating liquid distribution chamber by using the separating plate in this manner, and installing the shielding plate in the plating liquid distribution chamber to suppress distribution in the plating solution An electric field from the anode toward the plated article is formed in the chamber, thereby preventing an electric field from being formed under the plated article, thereby preventing the electric field from affecting the in-plane uniformity of the coating. When plating is carried out under conventional low current density conditions, the effect of the electric field formed under the plated article on the in-plane uniformity of the coating is not a problem. On the other hand, in the case of high current density conditions, the influence of this electric field causes a problem because the thickness of the portion of the plating film near the bottom of the plating tank is rapidly increased.
在本發明之一較佳方面中,該鍍覆裝置更包含配置在該陽極與該攪拌槳之間且由電介質材料製成的調節板。該調節板包含:內徑配合該鍍覆物件之輪廓的柱形部份;以及連接至該柱形部份之陽極側外周端的凸緣部份,用於調節形成於該陽極與該鍍覆物件之間的電場。與該分離板接觸的電場屏蔽構件係附接於該凸緣部份的下端。In a preferred aspect of the invention, the plating apparatus further includes an adjustment plate disposed between the anode and the stirring paddle and made of a dielectric material. The adjustment plate includes: a cylindrical portion having an inner diameter matching the contour of the plated article; and a flange portion connected to the outer peripheral end of the anode portion of the cylindrical portion for adjusting the anode and the plated article The electric field between. An electric field shielding member that is in contact with the separation plate is attached to a lower end of the flange portion.
提供該調節板可控制形成於該陽極與鍍覆物件之間的電場,此外,提供該電場屏蔽構件於該凸緣部份與該分離板之間可防止電場從該凸緣部份與該分離板之間的間隙洩露出。Providing the adjustment plate to control an electric field formed between the anode and the plated article, and further providing the electric field shielding member to prevent the electric field from being separated from the flange portion between the flange portion and the separation plate The gap between the plates leaks out.
在本發明之一較佳方面中,該鍍液分佈室被該屏蔽板分隔成陽極側溶液分佈室與陰極側溶液分佈室。該鍍液係通過鍍液供給路線供給至該陽極側溶液分佈室與該陰極側溶液分佈室。In a preferred aspect of the invention, the plating solution distribution chamber is partitioned by the shielding plate into an anode side solution distribution chamber and a cathode side solution distribution chamber. The plating solution is supplied to the anode side solution distribution chamber and the cathode side solution distribution chamber through a plating solution supply route.
藉由以此方式用該屏蔽板把該鍍液分佈室完全分隔成該陽極側溶液分佈室與該陰極側溶液分佈室,這使得能可靠地防止由該陽極產生的電位線穿過在該鍍液分佈室中的鍍液以及到達作為陰極的鍍覆物件。By completely separating the plating solution distribution chamber into the anode side solution distribution chamber and the cathode side solution distribution chamber by the shield plate in this manner, it is possible to reliably prevent the potential line generated by the anode from passing through the plating. The plating solution in the liquid distribution chamber and the plated article as the cathode.
在本發明之一較佳方面中,該攪拌槳係經由聯結器耦接至由該攪拌槳驅動部件伸出的軸桿。In a preferred aspect of the invention, the agitating paddle is coupled via a coupler to a shaft extending from the paddle drive member.
藉此結構,可經由該聯結器輕易地將該攪拌槳與由該攪拌槳驅動部件伸出的軸桿分離。這使得該攪拌槳的更換能夠快速方便地操作。With this configuration, the agitating paddle can be easily separated from the shaft projecting from the paddle driving member via the coupler. This allows the replacement of the paddle to be operated quickly and easily.
本發明也提供一種鍍覆裝置,其係包含:用於容納鍍液的鍍槽;陽極,其係待沉浸於在該鍍槽內的該鍍液中;保持器,其係用於保持鍍覆物件以及將該鍍覆物件配置於與該陽極相對向的位置;攪拌槳,其係經配置在該陽極和被該保持器保持著的該鍍覆物件之間,並且與該鍍覆物件呈平行地往復移動以攪拌該鍍液;控制部件,其係用於控制用以驅動該攪拌槳的攪拌槳驅動部件;配置在該陽極與該攪拌槳之間且由電介質材料製成的調節板;以及,調節板移動機構,其係用於以與該鍍覆物件平行之方式垂直或平行地移動該調節板。The present invention also provides a plating apparatus comprising: a plating tank for containing a plating solution; an anode to be immersed in the plating solution in the plating tank; and a holder for maintaining plating And the object is disposed at a position opposite to the anode; the stirring paddle is disposed between the anode and the plated article held by the holder, and is parallel to the plated article Reciprocatingly moving to agitate the plating solution; controlling a member for controlling a stirring paddle driving member for driving the agitating paddle; an adjusting plate disposed between the anode and the agitating paddle and made of a dielectric material; An adjustment plate moving mechanism for moving the adjustment plate vertically or in parallel in a manner parallel to the plated article.
該調節板移動機構可微調該調節板相對於鍍覆物件的垂直或水平位置,藉此可提高形成於鍍覆物件表面之鍍膜的厚度之面內均勻度。由於該調節板是配置在靠近鍍覆物件的位置,微調該調節板相對於該鍍覆物件的垂直或水平位置對於提高形成於鍍覆物件上之鍍膜的厚度之面內均勻度是很重要的。The adjustment plate moving mechanism can finely adjust the vertical or horizontal position of the adjustment plate relative to the plated article, thereby improving the in-plane uniformity of the thickness of the plating film formed on the surface of the plated article. Since the adjustment plate is disposed adjacent to the plated article, fine-tuning the vertical or horizontal position of the adjustment plate relative to the plated article is important to increase the in-plane uniformity of the thickness of the coating formed on the plated article. .
較佳地,該調節板移動機構包含壓入構件(press member),用於對該調節板施壓以使該調節板移動。Preferably, the adjustment plate moving mechanism includes a press member for applying pressure to the adjustment plate to move the adjustment plate.
例如,該壓入構件為壓入螺栓(press bolt)。可藉由控制由該壓入構件所施壓的程度(特別是,當具有預定螺距的壓入螺栓被用作壓入構件時,藉由控制壓入螺栓的迴轉數),而輕易控制該調節板的移動距離。For example, the press-in member is a press bolt. The adjustment can be easily controlled by controlling the degree of pressure applied by the press-in member (in particular, when the press-in bolt having a predetermined pitch is used as the press-in member, by controlling the number of revolutions of the press-in bolt) The moving distance of the board.
較佳地,在該鍍槽的內周面上設有導引構件,用來引導該調節板的移動。Preferably, a guide member is provided on the inner circumferential surface of the plating tank for guiding the movement of the adjustment plate.
該導引構件係使該調節板能夠與鍍覆物件呈平行地移動,同時保持兩者之間的距離不變。此外,藉由使用具有可讓該調節板之周圍部份插入之凹槽的導引構件,可防止電場由該調節板的周邊洩露出。The guiding member enables the adjustment plate to move in parallel with the plated article while maintaining the distance between the two. Further, by using the guiding member having a groove into which the peripheral portion of the regulating plate can be inserted, the electric field can be prevented from leaking from the periphery of the regulating plate.
較佳地,該調節板設有安裝部件(mounting section),用以安裝用於調節電場的輔助調節板。Preferably, the adjustment plate is provided with a mounting section for mounting an auxiliary adjustment plate for adjusting an electric field.
該調節板與該輔助調節板的組合係能夠針對鍍覆物件的類型形成最佳電場,而不用改變該調節板的安裝位置或更換該調節板。The combination of the adjustment plate and the auxiliary adjustment plate enables an optimum electric field to be formed for the type of the plated article without changing the installation position of the adjustment plate or replacing the adjustment plate.
在本發明之一較佳方面中,該鍍覆裝置更包含定位/保持部件(positioning/holding section),用於定位及保持該保持器、該調節板以及保持該陽極的陽極保持器。In a preferred aspect of the invention, the plating apparatus further includes a positioning/holding section for positioning and holding the holder, the adjustment plate, and the anode holder holding the anode.
藉由在該鍍槽中設定用以保持該基板保持器、該調節板及該陽極保持器的定位/保持部件於定位,可使該基板保持器、該調節板及該陽極保持器的中央位置在鍍槽的垂直方向中輕易地對齊。The central position of the substrate holder, the adjustment plate and the anode holder can be set by positioning the positioning/holding member for holding the substrate holder, the adjustment plate and the anode holder in the plating tank. Easily aligned in the vertical direction of the plating bath.
根據本發明的鍍覆裝置及鍍覆方法,在進行鍍覆物件(基板)(例如,半導體晶圓片)的鍍覆時,可形成具有平頂的凸塊或具有優良面內均勻度的金屬膜,即使在高電流密度條件下進行鍍覆時亦然。According to the plating apparatus and the plating method of the present invention, when plating a plated object (substrate) (for example, a semiconductor wafer), a bump having a flat top or a metal having excellent in-plane uniformity can be formed. The film is also coated even under high current density conditions.
現在將用附圖描述本發明的較佳具體實施例。以下描述係說明以基板為鍍覆物件實施鍍銅於其表面的情形。在以下說明中,相同或等價的元件都用相同的元件符號表示且不再重覆說明。Preferred embodiments of the present invention will now be described with reference to the drawings. The following description explains the case where copper plating is applied to the surface of the substrate as a plated article. In the following description, the same or equivalent elements are denoted by the same element symbols and will not be repeated.
第1圖為本發明鍍覆裝置之一具體實施例的垂直剖面正視圖。如第1圖所示,該鍍覆裝置包含容納鍍液Q於其中的鍍槽10。在鍍槽10的上端四周設有用於承接溢出鍍槽10邊緣之鍍液Q的溢流槽(overflow tank)12。設有泵14之鍍液供給路線16的一端係連接至溢流槽12的底部,而鍍液供給路線16的另一端係連接至設在鍍槽10底部的鍍液供給入口18。溢流槽12內的鍍液Q係藉由泵14之驅使而被送回到鍍槽10。在泵14之下游,將用於控制鍍液Q之溫度的恆溫單元20與用於濾出內含於鍍液之外來物質的過濾器22安插於鍍液供給路線16中。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a vertical cross-sectional elevational view of one embodiment of a plating apparatus of the present invention. As shown in Fig. 1, the plating apparatus includes a plating tank 10 in which a plating solution Q is accommodated. An overflow tank 12 for receiving the plating solution Q overflowing the edge of the plating tank 10 is provided around the upper end of the plating tank 10. One end of the plating liquid supply path 16 provided with the pump 14 is connected to the bottom of the overflow tank 12, and the other end of the plating liquid supply path 16 is connected to the plating liquid supply inlet 18 provided at the bottom of the plating tank 10. The plating solution Q in the overflow tank 12 is sent back to the plating tank 10 by the pump 14. Downstream of the pump 14, a thermostat unit 20 for controlling the temperature of the plating solution Q and a filter 22 for filtering out substances contained in the plating solution are placed in the plating solution supply path 16.
該鍍覆裝置也包含:基板保持器24,用以可拆卸地固持基板(鍍覆物件)W以及將基板W以垂直位置沉浸於鍍槽10的鍍液Q中。用陽極保持器28固持以及沉浸於鍍槽10之鍍液Q中的陽極26係經配置成是在用基板保持器24固持且沉浸於鍍液Q中的基板W之對面。在此具體實施例中,含磷銅用來作為陽極26。基板W與陽極26係經由鍍覆電源30來電氣連接,並藉由使電流在基板W、陽極26之間流通而在基板W表面上形成鍍膜(銅膜)。The plating apparatus also includes a substrate holder 24 for detachably holding the substrate (plating object) W and immersing the substrate W in the plating solution Q of the plating tank 10 at a vertical position. The anode 26 held by the anode holder 28 and immersed in the plating solution Q of the plating tank 10 is configured to be opposed to the substrate W held by the substrate holder 24 and immersed in the plating solution Q. In this embodiment, phosphorus-containing copper is used as the anode 26. The substrate W and the anode 26 are electrically connected via a plating power source 30, and a plating film (copper film) is formed on the surface of the substrate W by causing a current to flow between the substrate W and the anode 26.
與基板W表面呈平行地往復移動以攪拌鍍液Q的攪拌槳32係經配置成是在用基板保持器24固定以及浸入鍍液Q中的基板W與陽極26之間。藉由用攪拌槳32攪拌鍍液Q,可均勻地供給足夠數量的銅離子至基板W表面。攪拌槳32與基板W的距離較佳為5毫米至11毫米。此外,使得基板W整個表面上有更加均勻的電位分布之由電介質材料製成的調節板(regulation plate)34係經配置成位在攪拌槳32與陽極26之間。The agitating paddle 32 that reciprocates in parallel with the surface of the substrate W to agitate the plating solution Q is disposed between the substrate W and the anode 26 that are fixed by the substrate holder 24 and immersed in the plating solution Q. By stirring the plating solution Q with the stirring paddle 32, a sufficient amount of copper ions can be uniformly supplied to the surface of the substrate W. The distance between the stirring paddle 32 and the substrate W is preferably from 5 mm to 11 mm. Further, a regulation plate 34 made of a dielectric material having a more uniform potential distribution across the entire surface of the substrate W is disposed between the agitating paddle 32 and the anode 26.
如第2圖及第3圖所示,攪拌槳32係由矩形板狀構件構成,其具有3毫米至5毫米之均勻厚度“t”,以及有多個界定垂直延伸條狀部份32b的平行狹縫32a。攪拌槳32係由例如有鐵弗龍塗層的鈦形成。攪拌槳32的垂直長度L1 與狹縫32a的垂直長度L2 均充分地大於基板W的垂直尺寸。此外,攪拌槳32係經設計成使得它的橫向長度H與往復距離(行程“St”)的總和是充分地大於基板W的橫向尺寸。As shown in Figs. 2 and 3, the agitating paddle 32 is composed of a rectangular plate-like member having a uniform thickness "t" of 3 mm to 5 mm and a plurality of parallels defining the vertically extending strip portions 32b. Slit 32a. The agitating paddle 32 is formed of, for example, titanium coated with a Teflon coating. Vertical length L 1 of the stirring blade 32 and the vertical length L 2 of the slit 32a are sufficiently larger than the vertical dimension of the substrate W. Further, the agitating paddle 32 is designed such that the sum of its lateral length H and reciprocating distance (stroke "St") is sufficiently larger than the lateral dimension of the substrate W.
最好用以下方式決定狹縫32a的寬度及數目:使每個條形部份32b在具有必要剛性之範圍內儘量窄,使得在狹縫32a之間的條形部份32b可有效地攪拌鍍液,以及該鍍液可有效地流過狹縫32a。窄化攪拌槳32之條形部份32b的另一重要處是為了在攪拌槳32在接近其往復移動的末端(行程末端)或做暫時停止而減速時減少在基板W上形成的電場陰影(不被電場影響或很小的斑點)。Preferably, the width and number of the slits 32a are determined in such a manner that each strip portion 32b is as narrow as possible within a range having the necessary rigidity so that the strip portion 32b between the slits 32a can be effectively agitated and plated. The liquid, and the plating solution, can effectively flow through the slit 32a. Another important point of narrowing the strip portion 32b of the agitating paddle 32 is to reduce the electric field shadow formed on the substrate W when the agitating paddle 32 is decelerated near the end (stroke end) of its reciprocating movement or temporarily stopped ( Not affected by electric fields or small spots).
在此具體實施例中,如第3圖所示,狹縫32a係經垂直地形成,致使每個條形部份32b的橫截面為矩形。每個條形部份32b的寬度“B”較宜為2毫米至8毫米,以3毫米至6毫米更佳。如第4A圖所示,每個條形部份32b的橫截面之4個角可經倒角。或者是,如第4B圖所示,每個條形部份32b的橫截面可呈平行四邊形使得其相對於和基板W平行之垂直平面傾斜一預定角度θ。條形部份32b對於和基板W平行之垂直平面的傾斜角θ較宜為於30°至60°,以40°至50°更佳。藉此結構,可增強攪拌槳32攪拌鍍液的效果。In this embodiment, as shown in Fig. 3, the slits 32a are formed vertically such that each strip portion 32b has a rectangular cross section. The width "B" of each of the strip portions 32b is preferably from 2 mm to 8 mm, more preferably from 3 mm to 6 mm. As shown in Fig. 4A, the four corners of the cross section of each strip portion 32b can be chamfered. Alternatively, as shown in Fig. 4B, each of the strip portions 32b may have a parallelogram in cross section such that it is inclined by a predetermined angle θ with respect to a vertical plane parallel to the substrate W. The inclination angle θ of the strip portion 32b for the vertical plane parallel to the substrate W is preferably from 30 to 60, more preferably from 40 to 50. With this configuration, the effect of the stirring paddle 32 stirring the plating solution can be enhanced.
攪拌槳32的厚度(板厚)“t”較宜為3毫米至5毫米,此具體實施例是4毫米,藉此可將調節板34配置於基板W附近。已經確認的是,如果攪拌槳32的厚度(板厚)“t”為1毫米或2毫米,則攪拌槳32沒有足夠的強度。藉由使攪拌槳32有均勻的厚度,可防止鍍液飛濺或有大波浪。The thickness (plate thickness) "t" of the agitating paddle 32 is preferably 3 mm to 5 mm, and this embodiment is 4 mm, whereby the regulating plate 34 can be disposed in the vicinity of the substrate W. It has been confirmed that if the thickness (plate thickness) "t" of the agitating paddle 32 is 1 mm or 2 mm, the agitating paddle 32 does not have sufficient strength. By making the stirring paddle 32 have a uniform thickness, the plating solution can be prevented from splashing or having a large wave.
第5圖圖示攪拌槳32的驅動機構與鍍槽10。攪拌槳32係用固定於攪拌槳32上端的夾子36固定於水平延伸軸桿38。軸桿38用軸桿保持器40固定且可水平滑動。軸桿38的末端係耦合至用於使攪拌槳32線性及水平地往復移動的攪拌槳驅動部件42。攪拌槳驅動部件42用曲柄機構(未圖示)將馬達44的旋轉轉換成軸桿38的線性往復移動。在此具體實施例中,設有一控制部件46,其係藉由控制攪拌槳驅動部件42的馬達44轉速來控制攪拌槳32的移動速度。也可使用藉助滾珠螺桿來把伺服馬達的旋轉轉換成軸桿之線性往復移動的攪拌槳驅動部件,或用線性馬達使得軸桿線性往復移動的攪拌槳驅動部件以取代使用曲柄機構的攪拌槳驅動部件42。FIG. 5 illustrates the drive mechanism of the agitating paddle 32 and the plating tank 10. The agitating paddle 32 is fixed to the horizontally extending shaft 38 by a clip 36 fixed to the upper end of the paddle 32. The shaft 38 is fixed by the shaft holder 40 and is horizontally slidable. The end of the shaft 38 is coupled to a paddle drive member 42 for reciprocating the agitating paddle 32 linearly and horizontally. The paddle drive member 42 converts the rotation of the motor 44 into a linear reciprocating movement of the shaft 38 by a crank mechanism (not shown). In this embodiment, a control member 46 is provided which controls the speed of movement of the paddle 32 by controlling the rotational speed of the motor 44 of the paddle drive member 42. It is also possible to use a paddle drive member that converts the rotation of the servo motor into a linear reciprocating movement of the shaft by means of a ball screw, or a paddle drive member that linearly reciprocates the shaft with a linear motor instead of the paddle drive that uses the crank mechanism. Component 42.
在此具體實施例中,如第6圖所示,攪拌槳32的往復行程“St”係使得位於一行程末端的攪拌槳32之條形部份32b不會與位於另一行程末端的攪拌槳32條形部份32b重疊。此可減少攪拌槳32對於電場陰影在基板W上的形成的影響。In this embodiment, as shown in Fig. 6, the reciprocating stroke "St" of the agitating paddle 32 is such that the strip portion 32b of the agitating paddle 32 at the end of one stroke does not overlap with the paddle at the end of the other stroke. The 32 strip portions 32b overlap. This can reduce the effect of the agitating paddle 32 on the formation of electric field shadows on the substrate W.
在此具體實施例中,攪拌槳32是以高於習知攪拌槳的速度往復移動,尤其是以平均絕對值為70公分/秒至100公分/秒的速度移動。這是基於本發明人的以下實驗發現:當以8ASD(安培/平方分米(A/dm2 ))的電流密度(高於5ASD的習知電流密度)進行用於形成凸塊的鍍膜時,可藉由利用攪拌槳(其以高於習知攪拌槳的速度移動)攪拌鍍液而形成具有平頂的凸塊,尤其是以平均絕對值為70公分/秒至100公分/秒的速度移動。在此具體實施例中,是用曲柄機構把馬達44的旋轉移動轉換成攪拌槳32的線性往復移動,如上述;以及馬達44轉一圈會造成攪拌槳32以10公分的行程“St”做一次往復移動。在此具體實施例中,當馬達44以250rpm旋轉時,可形成最佳的凸塊。因此,攪拌槳32之移動速度的最佳平均絕對值為83公分/秒。In this particular embodiment, the agitating paddle 32 is reciprocated at a higher speed than conventional agitating paddles, particularly at an average absolute value of 70 centimeters per second to 100 centimeters per second. This is based on the following experiment by the present inventors: when a coating for forming a bump is performed at a current density of 8 ASD (A/dm 2 ) (a conventional current density higher than 5 ASD), The bump having a flat top can be formed by agitating the plating solution by using a stirring paddle which moves at a higher speed than the conventional stirring paddle, especially at a speed of an average absolute value of 70 cm/sec to 100 cm/sec. . In this embodiment, the rotational movement of the motor 44 is converted into a linear reciprocating movement of the agitating paddle 32 by a crank mechanism, as described above; and the rotation of the motor 44 causes the agitating paddle 32 to be made with a stroke "St" of 10 cm. Reciprocating once. In this particular embodiment, the optimum bumps are formed when the motor 44 is rotated at 250 rpm. Therefore, the optimum average absolute value of the moving speed of the stirring blade 32 is 83 cm/sec.
第7圖為第1圖所示之調節板34的概略圖。調節板34係由柱形部份50與矩形凸緣部份52構成,且由屬於電介質材料的聚氯乙烯製成。調節板34係裝在鍍槽10中,其中柱形部份50的前端是配置在基板側,而凸緣部份52是配置在陽極側。柱形部份50的開口大小及軸向長度可充分限制電場的變寬。在此具體實施例中,柱形部份的軸向長度為20毫米。凸緣部份52在鍍槽10中係經配置成使其可阻斷形成於陽極26與基板W之間的電場。請參考第1圖,調節板34的柱形部份50與基板W的距離以8毫米至25毫米為較佳,12毫米至18毫米更佳。Fig. 7 is a schematic view of the adjustment plate 34 shown in Fig. 1. The regulating plate 34 is composed of a cylindrical portion 50 and a rectangular flange portion 52, and is made of polyvinyl chloride which is a dielectric material. The regulating plate 34 is housed in the plating tank 10, wherein the front end of the cylindrical portion 50 is disposed on the substrate side, and the flange portion 52 is disposed on the anode side. The opening size and axial length of the cylindrical portion 50 can sufficiently limit the widening of the electric field. In this embodiment, the cylindrical portion has an axial length of 20 mm. The flange portion 52 is configured in the plating bath 10 such that it blocks the electric field formed between the anode 26 and the substrate W. Referring to Fig. 1, the distance between the cylindrical portion 50 of the adjusting plate 34 and the substrate W is preferably 8 mm to 25 mm, more preferably 12 mm to 18 mm.
儘管在本具體實施例的調節板34中,如第7圖所示,凸緣部份52是附接於柱形部份50的末端,然而也可向陽極延長柱形部份50使得柱形部份50的部份50a由凸緣部份52的陽極側表面突出,如第8圖所示。Although in the regulating plate 34 of the present embodiment, as shown in Fig. 7, the flange portion 52 is attached to the end of the cylindrical portion 50, the cylindrical portion 50 may be extended toward the anode to make the columnar shape. The portion 50a of the portion 50 protrudes from the anode side surface of the flange portion 52 as shown in Fig. 8.
如第1圖所示,基板W是用基板保持器24固定。基板保持器24係經設計成能夠供電至基板W中具有表面導電膜(例如,濺鍍銅膜)的周圍區域。基板保持器24有多個電接點(contact),而這些電接點的總寬度不小於可與電接點接觸之基板周圍區域的周長之60%。該等電接點係以等距均勻地分布。As shown in FIG. 1, the substrate W is fixed by the substrate holder 24. The substrate holder 24 is designed to be capable of supplying power to a peripheral region of the substrate W having a surface conductive film (for example, a sputtered copper film). The substrate holder 24 has a plurality of electrical contacts, and the total width of the electrical contacts is not less than 60% of the circumference of the area surrounding the substrate that is in contact with the electrical contacts. The electrical contacts are evenly distributed equidistantly.
由於攪拌槳32是以高速移動,例如,以平均絕對值為70公分/秒至100公分/秒的速度移動,因此在此具體實施例中,基板保持器24會接受來自鍍液之流動的反向壓力。這會招致問題,例如基板保持器24搖擺或傾斜。基板保持器24的搖擺或傾斜會導致電位分布不均勻,從而對於鍍膜的面內均勻度有不利影響。Since the agitating paddle 32 is moved at a high speed, for example, at an average absolute value of 70 cm/sec to 100 cm/sec, in this embodiment, the substrate holder 24 receives the counter from the flow of the plating solution. To the pressure. This can cause problems such as the substrate holder 24 swinging or tilting. The sway or tilt of the substrate holder 24 causes uneven potential distribution, which adversely affects the in-plane uniformity of the coating.
如第9圖所示,當基板保持器24被設置於鍍槽10中時是用被輸送裝置(未圖示)抓牢的保持器夾鉗(holder grip)60掛在輸送裝置上,然後利用向外突出卡在保持器支架62上的保持器臂部64而懸掛及支承於固定在鍍槽10上的保持器支架62上。As shown in Fig. 9, when the substrate holder 24 is placed in the plating tank 10, a holder grip 60 that is gripped by a conveying device (not shown) is hung on the conveying device, and then utilized. The holder arm portion 64 that is caught on the holder bracket 62 is protruded and supported by the holder bracket 62 fixed to the plating tank 10.
第10圖的放大透視圖係圖示保持器臂部64及其周遭,第11圖為保持器臂部64與保持器支架62相接觸時的的橫截面圖,以及第12圖為第11圖的右側視圖。如第10圖至第12圖所示,臂側接點(arm-side contact)66是裝在保持器臂部64之面向保持器支架62的表面。臂側接點66是用未圖示的導線電氣連接至用於供電至基板W的陰極接點。另一方面,支架側接點(support-side contact)68是裝在保持器支架62之面向保持器臂部64的表面。支架側接點68係電氣連接至未圖示的外部電源。當基板保持器24懸掛及支承於鍍槽10上時,臂側接點66與架側接點68會相互接觸及閉合,藉此可使外部電源與陰極接點電氣連接。因此,可施加陰極電壓至該等陰極接點。臂側接點66與支架側接點68通常是分別設在左、右保持器臂部64中之一個與左、右保持器支架62中與其對應的一個。10 is an enlarged perspective view showing the holder arm portion 64 and its surroundings, and FIG. 11 is a cross-sectional view of the holder arm portion 64 in contact with the holder holder 62, and FIG. 12 is an 11th view. Right side view. As shown in Figs. 10 to 12, an arm-side contact 66 is mounted on the surface of the holder arm portion 64 facing the holder holder 62. The arm side contact 66 is electrically connected to a cathode contact for supplying power to the substrate W by a wire (not shown). On the other hand, a support-side contact 68 is mounted on the surface of the holder bracket 62 facing the holder arm portion 64. The bracket side contact 68 is electrically connected to an external power source (not shown). When the substrate holder 24 is suspended and supported on the plating tank 10, the arm side contact 66 and the rack side contact 68 are in contact with each other and closed, whereby the external power source can be electrically connected to the cathode contact. Therefore, a cathode voltage can be applied to the cathode contacts. The arm side contact 66 and the bracket side contact 68 are generally provided in one of the left and right holder arms 64 and the corresponding one of the left and right holder brackets 62, respectively.
作為固定構件的臂側磁石(arm-side magnet)70是設在保持器臂部64之面向保持器支架62的表面,而作為固定構件的支架側磁石72是設在保持器支架62之面向保持器臂部64的表面。例如,釹磁石可用作磁石70、72。藉此結構,當基板保持器24懸掛及支承於鍍槽10上時,臂側磁石70與支架側磁石72會相互接觸及吸引,藉此可經由基板支架62與保持器臂部64使基板保持器24更穩固地固定於鍍槽10。因此,可防止基板保持器24由於鍍液的流動而搖擺或傾斜。臂側磁石70與架側磁石72通常是裝設在右、左保持器臂部64兩者與右、左保持器支架62兩者上。An arm-side magnet 70 as a fixing member is provided on a surface of the holder arm portion 64 facing the holder bracket 62, and a holder-side magnet 72 as a fixing member is provided to face the holder holder 62. The surface of the arm portion 64. For example, a neodymium magnet can be used as the magnets 70, 72. With this configuration, when the substrate holder 24 is suspended and supported on the plating tank 10, the arm-side magnet 70 and the holder-side magnet 72 can contact and attract each other, whereby the substrate can be held via the substrate holder 62 and the holder arm portion 64. The device 24 is more firmly fixed to the plating tank 10. Therefore, the substrate holder 24 can be prevented from being swung or tilted due to the flow of the plating solution. The arm side magnets 70 and the rack side magnets 72 are typically mounted on both the right and left retainer arms 64 and the right and left retainer brackets 62.
基板保持器24相對於鍍槽10的定位是用輸送裝置的輸送來完成。如第13圖所示,在保持器支架62中也可設置在頂部具有錐面的溝狀開口62a,並用開口62a作為基板保持器24之保持器臂部64用的導件。當將開口(導件)62a設於基板支架62以供基板保持器24與鍍槽10之定位時,則為了基板保持器24的定位及輸送,開口62a需要小尺寸的“游隙”。當基板保持器24在“游隙”範圍內搖擺或傾斜時,臂側接點66與支架側接點68有可能永久或間歇地斷開。鑑於這點,藉由在接點66、68附近的磁石70、72使基板保持器24穩固地支承於鍍槽10上,從而可使臂側接點66與支架側接點68緊緊地接觸。此外,可抑制由於接點66、68之磨擦而導致的磨損,以及增強接點66、68的耐久性。The positioning of the substrate holder 24 relative to the plating tank 10 is accomplished by transport of the transport device. As shown in Fig. 13, a groove-shaped opening 62a having a tapered surface at the top may be provided in the holder holder 62, and the opening 62a may be used as a guide for the holder arm portion 64 of the substrate holder 24. When the opening (guide) 62a is provided on the substrate holder 62 for positioning the substrate holder 24 and the plating tank 10, the opening 62a requires a small "slip" for positioning and transportation of the substrate holder 24. When the substrate holder 24 is rocked or tilted within the "chuck" range, the arm side contact 66 and the bracket side contact 68 may be permanently or intermittently disconnected. In view of this, the substrate holder 24 is firmly supported on the plating tank 10 by the magnets 70, 72 in the vicinity of the contacts 66, 68, so that the arm side contact 66 can be brought into tight contact with the bracket side contact 68. . In addition, wear due to friction of the contacts 66, 68 can be suppressed, and durability of the joints 66, 68 can be enhanced.
臂側磁石70與支架側磁石72中之一個可換成磁性材料。磁石也可覆上磁性材料以防止磁石因其接觸而損壞。此外,可用磁性材料覆蓋磁石的周圍以便暴露磁石的表面且部份磁性材料由磁石表面突出,藉此增加磁力。One of the arm side magnet 70 and the holder side magnet 72 may be replaced with a magnetic material. The magnet may also be coated with a magnetic material to prevent the magnet from being damaged by its contact. Further, the periphery of the magnet may be covered with a magnetic material to expose the surface of the magnet and a part of the magnetic material is protruded from the surface of the magnet, thereby increasing the magnetic force.
如第1圖所示,在鍍槽10底部安裝分離板80與屏蔽板82。為了使得鍍液Q(其係由設於鍍槽10底部之鍍液供給入口18供給)能在基板W的整個表面上形成均勻之流動,在鍍槽10底部提供用以散佈鍍液的空間,以及在該空間中水平地配置具有許多鍍液通行孔的分離板80。因此,分離板10可把鍍槽10的內部分成上部基板處理室84與下部鍍液分佈室86。As shown in Fig. 1, a separating plate 80 and a shield plate 82 are attached to the bottom of the plating tank 10. In order to allow the plating solution Q (which is supplied from the plating liquid supply inlet 18 provided at the bottom of the plating tank 10) to form a uniform flow over the entire surface of the substrate W, a space for dispersing the plating solution is provided at the bottom of the plating tank 10, And a separation plate 80 having a plurality of plating liquid passage holes is horizontally disposed in the space. Therefore, the separating plate 10 can divide the inside of the plating tank 10 into the upper substrate processing chamber 84 and the lower plating liquid distribution chamber 86.
第14圖為分離板80的平面圖,分離板80具有與鍍槽10之內部形狀實質相同的形狀,並具有許多遍及板體的鍍液通行孔80a。藉由用分離板80把鍍槽10分成基板處理室84與鍍液分佈室86,以及設置具有鍍液通行孔80a讓鍍液通過的分離板80,而使得鍍液Q可形成流向基板W的均勻流動。如果設於分離板80的鍍液通行孔80a有大直徑,源於陽極26的電場會穿過鍍液分佈室86並洩露進入基板W側,這會影響形成於基板W上之鍍膜的面內均勻度。因此,用於本具體實施例的鍍液通行孔80a係具有2.5毫米的小直徑。Fig. 14 is a plan view of the separating plate 80 having substantially the same shape as the inner shape of the plating tank 10, and having a plurality of plating liquid passage holes 80a extending through the plate body. The plating solution Q can be formed into the substrate W by dividing the plating tank 10 into the substrate processing chamber 84 and the plating solution distribution chamber 86 by the separation plate 80, and the separation plate 80 having the plating liquid passage hole 80a for allowing the plating liquid to pass therethrough. Flow evenly. If the plating liquid passage hole 80a provided in the separating plate 80 has a large diameter, the electric field originating from the anode 26 passes through the plating liquid distribution chamber 86 and leaks into the substrate W side, which affects the in-plane uniformity of the plating film formed on the substrate W. degree. Therefore, the plating liquid passage hole 80a used in the present embodiment has a small diameter of 2.5 mm.
儘管在此具體實施例中,設有遍及分離板80的鍍液通行孔80a,然而不一定要以遍及板體的方式設置小孔80a。例如,如第15圖所示,可在以調節板34之位置A為界的基板側區域中設置分散的鍍液通行孔80a,以及在以陽極26之位置B為界的對面區域(在陽極後方)中也設置鍍液通行孔80a。使用圖示於第15圖的分離板80可更有效地防止陽極26的電場穿過鍍液分佈室86以及洩露進入基板W側。此外,在鍍液通行孔80a也設於陽極26後方時,可由鍍槽10可靠地排出鍍液Q。Although in this embodiment, the plating liquid passage hole 80a is provided throughout the separation plate 80, it is not necessary to provide the small hole 80a in a manner throughout the plate body. For example, as shown in Fig. 15, a dispersed plating liquid passage hole 80a may be provided in the substrate side region bounded by the position A of the regulating plate 34, and an opposite region (at the anode) bounded by the position B of the anode 26 A plating passage hole 80a is also provided in the rear portion. The use of the separation plate 80 shown in Fig. 15 can more effectively prevent the electric field of the anode 26 from passing through the plating solution distribution chamber 86 and leaking into the substrate W side. Further, when the plating solution passage hole 80a is also provided behind the anode 26, the plating solution Q can be reliably discharged by the plating tank 10.
如第16圖所示,分離板80係水平地被支承於設置在鍍槽10之側板10a上的分離板支架90上。分離板80與分離板支架90可藉由設於其中間的襯墊92而緊密地接觸。As shown in Fig. 16, the separating plate 80 is horizontally supported on the separating plate holder 90 provided on the side plate 10a of the plating tank 10. The separating plate 80 and the separating plate holder 90 can be in close contact by the spacer 92 provided therebetween.
儘管使用分離板80,源於陽極26的電場仍可能穿過鍍液分佈室86以及洩露進入基板W側,這會影響形成於基板W上之鍍膜的面內均勻度。因此,在此具體實施例中,向下垂直延伸的屏蔽板82是安裝於分離板80的下表面。設置屏蔽板82可更有效地防止源於陽極26的電場穿過鍍液分佈室86以及洩露進入基板W側,同時確保鍍液Q分散於鍍液分佈室86中以及使鍍液Q形成流入基板處理室84的均勻流動。關於這點,如第17圖所示,屏蔽板82是用以下方式安裝於分離板80的下表面:屏蔽板82是配置在鍍液供給入口18的正上方,並在屏蔽板82與鍍槽10底部之間形成間隙“S”。為了防止電場洩露,間隙“S”儘可能小為較佳。Although the separation plate 80 is used, the electric field originating from the anode 26 may still pass through the plating solution distribution chamber 86 and leak into the substrate W side, which affects the in-plane uniformity of the plating film formed on the substrate W. Therefore, in this embodiment, the shield plate 82 extending vertically downward is mounted to the lower surface of the separation plate 80. The shielding plate 82 is provided to more effectively prevent the electric field originating from the anode 26 from passing through the plating liquid distribution chamber 86 and leaking into the substrate W side while ensuring that the plating solution Q is dispersed in the plating liquid distribution chamber 86 and forming the plating solution Q into the substrate. The uniform flow of the processing chamber 84. In this regard, as shown in Fig. 17, the shield plate 82 is attached to the lower surface of the separation plate 80 in such a manner that the shield plate 82 is disposed directly above the plating solution supply inlet 18, and is provided in the shield plate 82 and the plating tank. A gap "S" is formed between the bottoms of 10. In order to prevent electric field leakage, the gap "S" is preferably as small as possible.
如第18圖所示,也可配置與鍍槽10底部接觸的屏蔽板82,以及在屏蔽板82中設置半圓形開口82a以確保用於鍍液的流道。此外,就此情形而言,開口82a儘可能小為較佳以防止電場洩露。屏蔽板82係經配置成位在分離板80下表面中沒有鍍液通行孔80a的區域中,例如,在調節板34之位於凸緣部份52正下方的區域。As shown in Fig. 18, a shield plate 82 that is in contact with the bottom of the plating tank 10 may be disposed, and a semicircular opening 82a is provided in the shield plate 82 to secure a flow path for plating. Further, in this case, it is preferable that the opening 82a is as small as possible to prevent electric field from leaking. The shield plate 82 is configured to be positioned in a region where the plating liquid passage hole 80a is not present in the lower surface of the separation plate 80, for example, in a region of the adjustment plate 34 directly below the flange portion 52.
儘管在此具體實施例中,屏蔽板82是配置在鍍液供給入口18的正上方,屏蔽板82不一定要配置於鍍液供給入口18的正上方。此外,也可使用多個屏蔽板82。Although in this embodiment, the shield plate 82 is disposed directly above the plating solution supply inlet 18, the shield plate 82 does not have to be disposed directly above the plating solution supply inlet 18. In addition, a plurality of shielding plates 82 can also be used.
在第1圖的鍍覆裝置中,基板W、陽極26、調節板34及攪拌槳32在鍍槽10中的位置關係會影響形成於基板W上之鍍膜的面內均勻度。在此具體實施例中,基板W、陽極26及調節板34係經配置成使得基板W的中心、陽極26的中心及調節板34之柱形部份50的軸線實質對齊。在此具體實施例中,陽極26與基板W的極間距離(pole-to-pole distance)為90毫米;而該極間距離大體上可設定於60毫米至95毫米的範圍內。在此具體實施例中,基板W與調節板34之柱形部份50在基板W側之末端的距離為15毫米,而柱形部份50的長度為20毫米,因此基板W與調節板34之凸緣部份52的距離為35毫米。In the plating apparatus of Fig. 1, the positional relationship of the substrate W, the anode 26, the regulating plate 34, and the stirring blade 32 in the plating tank 10 affects the in-plane uniformity of the plating film formed on the substrate W. In this particular embodiment, substrate W, anode 26, and conditioning plate 34 are configured such that the center of substrate W, the center of anode 26, and the axis of cylindrical portion 50 of conditioning plate 34 are substantially aligned. In this embodiment, the pole-to-pole distance of the anode 26 and the substrate W is 90 mm; and the inter-electrode distance can be set substantially in the range of 60 mm to 95 mm. In this embodiment, the distance between the substrate W and the cylindrical portion 50 of the adjustment plate 34 at the end of the substrate W side is 15 mm, and the length of the cylindrical portion 50 is 20 mm, so the substrate W and the adjustment plate 34 The flange portion 52 has a distance of 35 mm.
如第19圖所示,下端與分離板80彈性接觸的電場屏蔽構件94(例如,由橡膠片製成)是設在調節板34之凸緣部份52之位在陽極側的下端。電場屏蔽構件94可防止電流由在分離板80、凸緣部份52之間的間隙洩露出。也可使凸緣部份52的下表面與分離板80的上表面緊密接觸使得凸緣部份52也可用作電場屏蔽構件。As shown in Fig. 19, the electric field shielding member 94 (e.g., made of a rubber sheet) whose lower end is in elastic contact with the separating plate 80 is provided at the lower end of the flange portion 52 of the regulating plate 34 on the anode side. The electric field shielding member 94 prevents current from leaking from the gap between the separating plate 80 and the flange portion 52. The lower surface of the flange portion 52 can also be brought into close contact with the upper surface of the separating plate 80 so that the flange portion 52 can also function as an electric field shielding member.
可用能夠調整調節板34與基板W之距離的方式來安裝調節板34於鍍槽10。特別是,如第20圖所示,可在鍍槽10的側板10a上裝設具有多個以預定間距排列之垂直狹縫96a的調節板固定用開縫板96,以及將調節板34之凸緣部份52的各側端插入調節板固定用開縫板96的任意狹縫96a。調節板固定用開縫板96可用狹縫96b及固定螺絲98安裝於鍍槽側板10a。此一安裝法使得有可能精細地調整調節板34與基板W的距離以便可使調節板34位於用於此類基板的最佳位置。The adjustment plate 34 can be mounted on the plating tank 10 in such a manner that the distance between the adjustment plate 34 and the substrate W can be adjusted. In particular, as shown in Fig. 20, an adjustment plate fixing slit plate 96 having a plurality of vertical slits 96a arranged at a predetermined pitch, and a convex portion of the regulating plate 34 can be attached to the side plate 10a of the plating tank 10. Each side end of the edge portion 52 is inserted into any slit 96a of the slit plate 96 for adjusting the plate. The adjusting plate fixing slit plate 96 is attached to the plating tank side plate 10a by a slit 96b and a fixing screw 98. This mounting method makes it possible to finely adjust the distance of the adjustment plate 34 from the substrate W so that the adjustment plate 34 can be positioned at an optimum position for such a substrate.
最好在調節板固定用開縫板96附近的凸緣部份52中設置由橡膠密封件製成的一對電場屏蔽構件100,以便防止形成由陽極26朝向基板W的電場穿過凸緣部份52的各側端與狹縫96a之間的間隙。電場屏蔽構件100可只裝設在調節板固定用開縫板96的陽極側。Preferably, a pair of electric field shielding members 100 made of a rubber seal are provided in the flange portion 52 near the adjustment plate fixing slit plate 96 to prevent formation of an electric field from the anode 26 toward the substrate W through the flange portion. A gap between each side end of the portion 52 and the slit 96a. The electric field shielding member 100 can be mounted only on the anode side of the adjusting plate fixing slit plate 96.
在本發明的鍍覆裝置中,形成於基板上的凸塊之典型直徑為150微米,而鍍覆目標厚度為110微米。為了形成該等凸塊,最好使用硫酸銅濃度不小於150克/升的鍍液。一示範鍍液包括具有下列組合物的鹼性溶液,並含有數種有機添加物,特別是聚合物成份(抑制劑)、載體成份(加速劑)、以及整平劑成份(抑制劑):In the plating apparatus of the present invention, the bump formed on the substrate has a typical diameter of 150 μm and the plating target has a thickness of 110 μm. In order to form the bumps, it is preferred to use a plating solution having a copper sulfate concentration of not less than 150 g/liter. An exemplary bath includes an alkaline solution having the following composition and containing several organic additives, particularly a polymer component (inhibitor), a carrier component (accelerator), and a leveler component (inhibitor):
鹼性溶液的組合物Alkaline solution composition
硫酸銅五水化物(CuSO4 -5H2 O):200克/升Copper sulfate pentahydrate (CuSO 4 -5H 2 O): 200 g / liter
硫酸(H2 SO4 ):100克/升Sulfuric acid (H 2 SO 4 ): 100 g / liter
氯(Cl):60毫克/升Chlorine (Cl): 60 mg / liter
儘管習知常用鍍覆方法是以3ASD至5ASD的電流密度來進行形成凸塊的鍍覆,本發明是以例如8ASD的電流密度來進行鍍覆。本發明的鍍覆裝置及鍍覆方法能以達14ASD的電流密度來實施鍍覆。除非另有說明,在以下的說明中,鍍覆操作是以8ASD的電流密度進行。Although the conventional plating method is conventionally performed to form bumps by a current density of 3 ASD to 5 ASD, the present invention performs plating at a current density of, for example, 8 ASD. The plating apparatus and the plating method of the present invention can perform plating at a current density of up to 14 ASD. Unless otherwise stated, in the following description, the plating operation was performed at a current density of 8 ASD.
第21圖圖示用於形成凸塊的鍍銅製程。首先,藉由沉浸基板於純水例如持續10分鐘來用水預清洗基板。接下來,藉由沉浸基板於5體積百分比(vol%)的硫酸例如持續1分鐘來實施基板的預處理。然後用純水清洗基板例如持續30秒。純水清洗係實施兩次。之後,用以下方式實施基板的銅鍍覆:首先,在不施加電流的情形下沉浸基板於鍍液持續1分鐘,然後施加電流至鍍覆系統。用純水清洗鍍覆後的基板,然後例如藉由噴吹氮氣來乾燥該基板。在鍍覆製程後,用阻劑剝除溶液(resist-stripping solution)從基板剝掉阻劑,接著進行水清洗及乾燥。Figure 21 illustrates a copper plating process for forming bumps. First, the substrate is pre-cleaned with water by immersing the substrate in pure water, for example, for 10 minutes. Next, pretreatment of the substrate is carried out by immersing the substrate in 5 volume percent (vol%) sulfuric acid, for example, for 1 minute. The substrate is then washed with pure water, for example for 30 seconds. The pure water cleaning system was carried out twice. Thereafter, copper plating of the substrate was carried out in the following manner: First, the substrate was immersed in the plating solution for 1 minute without applying a current, and then an electric current was applied to the plating system. The plated substrate is washed with pure water, and then the substrate is dried, for example, by blowing nitrogen gas. After the plating process, the resist is stripped from the substrate with a resist-stripping solution, followed by water washing and drying.
第22圖及第23圖圖示有不同形狀的凸塊,彼等是用電流密度同樣為8ASD但用於攪拌鍍液的攪拌槳之移動速度不相同的不同鍍覆方法形成。特別是,第22圖係顯示以下述方式形成之凸塊之形狀:在實施鍍覆時,使攪拌槳以平均絕對值為20公分/秒的速度(其為習知常用速度)移動藉此來攪拌鍍液;而第23圖係顯示以下述方式形成之凸塊之形狀:在實施鍍覆時,使攪拌槳以平均絕對值為83公分/秒的速度移動藉此攪拌鍍液。如第22圖所示,在用8ASD的高電流密度進行鍍覆同時攪拌鍍液的攪拌槳是以習知的低速移動,藉此形成凸塊時,凸塊之凸形頂部的高度h1為30微米;然而,如第23圖所示,在用相同的高電流密度進行鍍覆同時攪拌鍍液的攪拌槳是以顯著較高的速度(平均絕對值為83公分/秒)移動藉此形成凸塊的情形中,其凸形頂部的高度h2為15微米而顯著低於習知凸塊的高度。Figs. 22 and 23 illustrate bumps having different shapes which are formed by different plating methods in which the moving speed of the stirring paddle having the same current density of 8 ASD but for stirring the plating solution is different. In particular, Fig. 22 shows the shape of the bump formed in such a manner that when the plating is performed, the stirring blade is moved at an average absolute value of 20 cm/sec, which is a conventional speed. The plating solution was stirred; and Fig. 23 shows the shape of the bump formed in such a manner that, when plating was performed, the stirring blade was moved at an average absolute value of 83 cm/sec to thereby agitate the plating solution. As shown in Fig. 22, the stirring paddle which is plated with a high current density of 8 ASD while stirring the plating solution is moved at a known low speed, whereby the height h1 of the convex top of the bump is 30 when the bump is formed. Micron; however, as shown in Fig. 23, the stirring paddle which is plated while using the same high current density while stirring the plating solution is moved at a significantly higher speed (average absolute value of 83 cm/sec) thereby forming a convex shape. In the case of a block, the height h2 of the convex top is 15 microns and is significantly lower than the height of the conventional bump.
第24圖至第28圖圖示藉由使用構造大體與第1圖所示之鍍覆裝置相同的鍍覆裝置之鍍覆方法形成於基板(晶圓)上的凸塊之顯微照片,其中該等鍍覆方法係使用不同的攪拌槳以及以不同的移動速度攪拌鍍液。具體而言,第24圖所示之凸塊係藉由下述方式形成:在實施鍍覆之同時,攪拌鍍液的攪拌槳(厚度2毫米)是以平均絕對值為40公分/秒的速度移動。可在形成於基板之整個表面上的凸塊觀察到缺陷。第25圖所示之凸塊係藉由下述方式形成:在實施鍍覆之同時,攪拌鍍液的攪拌槳(厚度4毫米)是以平均絕對值為40公分/秒的速度移動。形成於基板之整個表面上的凸塊有缺陷以及有不規則的形狀。由第24圖及第25圖可見,只增加攪拌槳的厚度是不夠的。24 to 28 illustrate photomicrographs of bumps formed on a substrate (wafer) by a plating method using a plating apparatus having a structure substantially the same as that of the plating apparatus shown in Fig. 1, wherein These plating methods use different paddles and agitate the bath at different moving speeds. Specifically, the bump shown in Fig. 24 is formed by agitating the paddle (thickness 2 mm) at the same time as the average absolute value of 40 cm/sec while performing the plating. mobile. Defects can be observed on the bumps formed on the entire surface of the substrate. The bump shown in Fig. 25 was formed by moving the stirring paddle (thickness 4 mm) of the plating solution while moving at a speed of an average absolute value of 40 cm/sec. The bumps formed on the entire surface of the substrate are defective and have an irregular shape. As can be seen from Figs. 24 and 25, it is not sufficient to increase the thickness of the stirring paddle only.
第26圖所示之凸塊是藉由下述方式形成:在實施鍍覆之同時,攪拌鍍液的攪拌槳(厚度4毫米)是以平均絕對值為67公分/秒的速度移動。可在形成於基板之整個表面上的凸塊觀察到缺陷。第27圖所示之凸塊是藉由下述方式形成:在實施鍍覆之同時,攪拌鍍液的攪拌槳(厚度4毫米)是以平均絕對值為83公分/秒的速度移動。形成於基板之整個表面上的凸塊為無缺陷的優良凸塊。吾等認為造成第26圖凸塊與第27圖凸塊有上述差異之原因為,當攪拌槳以低速移動時,銅離子的供給在高電流密度條件下會不足而造成凸塊的缺陷,而當攪拌槳以高速移動時,可供給足夠數量的銅離子而可形成無缺陷的凸塊。當在相同的高電流密度條件下進行鍍覆之同時攪拌鍍液的攪拌槳(厚度3毫米)是以平均絕對值為83公分/秒的速度移動時,可觀察到形成於基板之整個表面上的凸塊都沒有缺陷,如第28圖所示。由第27圖與第28圖的比較可見,與使用厚度4毫米的攪拌槳相比,使用厚度3毫米的攪拌槳係產生頂部較圓的凸塊。The bump shown in Fig. 26 was formed by moving the stirring paddle (thickness 4 mm) of the plating solution while moving at a speed of an average absolute value of 67 cm/sec. Defects can be observed on the bumps formed on the entire surface of the substrate. The bump shown in Fig. 27 was formed by moving the stirring paddle (thickness 4 mm) of the plating solution while moving at a speed of an average absolute value of 83 cm/sec. The bumps formed on the entire surface of the substrate are excellent bumps without defects. We believe that the reason for the difference between the bumps in Figure 26 and the bumps in Figure 27 is that when the paddle is moving at a low speed, the supply of copper ions will be insufficient under high current density conditions to cause bump defects. When the paddle is moved at a high speed, a sufficient amount of copper ions can be supplied to form a defect-free bump. When the plating paddle (thickness 3 mm) which agitates the plating solution under the same high current density condition is moved at a speed of an average absolute value of 83 cm/sec, it is observed that it is formed on the entire surface of the substrate. The bumps are free of defects, as shown in Figure 28. As can be seen from the comparison of Fig. 27 and Fig. 28, the use of a paddle system having a thickness of 3 mm produces a relatively rounded bump at the top as compared with the use of a paddle having a thickness of 4 mm.
第29圖係圖示使用在分離板下面不裝設屏蔽板的鍍槽來進行鍍覆時所形成之凸塊在基板上的高度分布,而第30圖圖示使用在分離板下面設有屏蔽板的鍍槽來進行鍍覆時所形成之凸塊在基板上的高度分布。列於附註之數值的單位為“微米(μm)”。如第29圖所示,當不使用屏蔽板時,基板之靠近鍍槽底部的邊緣部份之鍍覆厚度(凸塊高度)係大於中央部份,然而,如第30圖所示,當使用屏蔽板時,基板之靠近鍍槽底部的邊緣部份之鍍覆厚度會減少到大致與中央部份之鍍覆厚度相同的程度。Figure 29 is a diagram showing the height distribution of the bumps formed on the substrate by plating using a plating tank without a shield plate under the separation plate, and Figure 30 is a view showing the use of a shield under the separation plate. The plating of the plate is used to perform the plating to form a height distribution of the bumps on the substrate. The unit of the value listed in the note is "micron (μm)". As shown in Fig. 29, when the shielding plate is not used, the plating thickness (bump height) of the edge portion of the substrate near the bottom of the plating tank is larger than the central portion, however, as shown in Fig. 30, when used When the shield is shielded, the plating thickness of the edge portion of the substrate near the bottom of the plating tank is reduced to approximately the same extent as the plating thickness of the central portion.
第31圖及第32圖的曲線圖係圖示以不同鍍覆方法形成於基板上之凸塊在基板上之高度的面內均勻度,該等方法係使用具有不同形狀且與配置在離基板有不同距離的調節板,以及攪拌槳用不同的移動速度來攪拌鍍液。第31圖及第32圖所示的X軸與Y軸為第33圖中之正交軸線。具體而言,第31圖圖示以下述方式形成之凸塊之高度的面內均勻度:形成該等凸塊的鍍覆係使用在中央有開口以及無凸緣部份、與基板相距35毫米的5毫米厚扁平調節板,同時攪拌鍍液的攪拌槳是以平均絕對值為20公分/秒的速度移動。凸塊高度(鍍覆厚度)的分布為W形的分布曲線。第32圖圖示以下述方式形成之凸塊之高度的面內均勻度:形成該等凸塊的鍍覆係使用如第7圖所示、與基板相距15毫米的調節板,同時攪拌鍍液的攪拌槳是以平均絕對值為83公分/秒的速度移動。凸塊高度(鍍覆厚度)的分布曲線比第31圖所示者平坦,這表示第32圖的凸塊之面內均勻度有提高。The graphs of Figures 31 and 32 illustrate the in-plane uniformity of the height of the bumps formed on the substrate by different plating methods on the substrate, the methods being used with different shapes and disposed on the substrate. There are adjustment plates at different distances, and the paddles are used to agitate the bath with different moving speeds. The X-axis and the Y-axis shown in Figs. 31 and 32 are orthogonal axes in Fig. 33. Specifically, Fig. 31 illustrates the in-plane uniformity of the height of the bumps formed in such a manner that the plating forming the bumps has an opening and a flangeless portion in the center, and is 35 mm apart from the substrate. The 5 mm thick flat adjustment plate while the stirring paddle stirring the plating solution was moved at an average absolute value of 20 cm/sec. The distribution of the bump height (plating thickness) is a W-shaped distribution curve. Figure 32 illustrates the in-plane uniformity of the height of the bumps formed in such a manner that the plating forming the bumps uses an adjustment plate 15 mm apart from the substrate as shown in Fig. 7, while stirring the plating solution The paddle was moved at an average absolute value of 83 cm/sec. The distribution curve of the bump height (plating thickness) is flatter than that shown in Fig. 31, which indicates that the in-plane uniformity of the bump of Fig. 32 is improved.
第34圖為本發明之鍍覆裝置之另一具體實施例。此具體實施例的鍍覆裝置係使用由分離板80下表面垂直向下延伸且下端到達鍍槽10底壁的屏蔽板82。因此,形成於分離板80下面的鍍液分佈室86會完全被屏蔽板82分隔成陽極側溶液分佈室110與陰極側溶液分佈室112。屏蔽板82的下端表面是用例如焊接法固定於鍍槽10的底壁。Figure 34 is another embodiment of the plating apparatus of the present invention. The plating apparatus of this embodiment uses a shield plate 82 that extends vertically downward from the lower surface of the separator plate 80 and reaches the bottom wall of the plating tank 10 at the lower end. Therefore, the plating solution distribution chamber 86 formed under the separation plate 80 is completely separated by the shield plate 82 into the anode side solution distribution chamber 110 and the cathode side solution distribution chamber 112. The lower end surface of the shield plate 82 is fixed to the bottom wall of the plating tank 10 by, for example, welding.
鍍液供給路線16在恆溫單元20與過濾器22之間設有主閥114與流量計116。在過濾器22下游,鍍液供給路線16分叉成兩條分叉路線16a、16b,而分叉路線16a、16b各自連接至陽極側溶液分佈室110與陰極側溶液分佈室112。分叉路線16a、16b各自設有閥118a、118b。The plating solution supply route 16 is provided with a main valve 114 and a flow meter 116 between the thermostatic unit 20 and the filter 22. Downstream of the filter 22, the bath supply route 16 branches into two bifurcation routes 16a, 16b, and the bifurcation routes 16a, 16b are each connected to the anode side solution distribution chamber 110 and the cathode side solution distribution chamber 112. The branching paths 16a, 16b are each provided with valves 118a, 118b.
藉由以此方式用屏蔽板82把鍍液分佈室86完全分隔成陽極側溶液分佈室110與陰極側溶液分佈室112,則可可靠地防止由陽極26產生的電位線穿過鍍液分佈室86的鍍液並洩露進入陰極(基板)側。此外,可通過鍍液供給路線16來個別供給鍍液至陽極側溶液分佈室110與陰極側溶液分佈室112。By completely separating the plating solution distribution chamber 86 into the anode side solution distribution chamber 110 and the cathode side solution distribution chamber 112 by the shield plate 82 in this manner, the potential line generated by the anode 26 can be reliably prevented from passing through the plating solution distribution chamber. The plating solution of 86 leaked into the cathode (substrate) side. Further, the plating solution may be individually supplied to the anode side solution distribution chamber 110 and the cathode side solution distribution chamber 112 through the plating solution supply route 16.
第35圖及第36圖圖示用於攪拌槳32的另一驅動機構與鍍槽10。在此具體實施例中,將攪拌槳32的上端安裝於攪拌槳保持構件120。由攪拌槳驅動部件42伸出的軸桿38被分成3個部份:分別用軸桿保持器40支承的右端及左端軸桿38a、38b,以及位於末端軸桿38a、38b之間的中間軸桿38c。中間軸桿38c係穿過攪拌槳保持構件120而露出兩端。中間軸桿38c有一端是用聯結器122a連接至末端軸桿38a,而另一端是用聯結器122b連接至末端軸桿38b。在此具體實施例中,聯結器122a、122b是用螺桿型聯結器。不過,可使用任何聯結器,例如所謂的快速聯結器。FIGS. 35 and 36 illustrate another drive mechanism for the paddle 32 and the plating tank 10. In this embodiment, the upper end of the agitating paddle 32 is attached to the agitating paddle holding member 120. The shaft 38 projecting from the paddle drive member 42 is divided into three parts: a right end and a left end shaft 38a, 38b supported by the shaft holder 40, respectively, and an intermediate shaft between the end shafts 38a, 38b. Rod 38c. The intermediate shaft 38c passes through the agitating paddle holding member 120 to expose both ends. The intermediate shaft 38c has one end connected to the end shaft 38a by a coupling 122a and the other end connected to the end shaft 38b by a coupling 122b. In this particular embodiment, the couplers 122a, 122b are screw type couplers. However, any coupling can be used, such as a so-called quick coupler.
例如,在更換攪拌槳32時,可透過聯結器122a、122b而由鍍覆裝置一起卸下攪拌槳32、攪拌槳保持構件120及中間軸桿38c而不必由鍍覆裝置卸下軸桿保持器40。因此,可輕易快速地完成攪拌槳32的更換。此外,在重新安裝攪拌槳32於鍍覆裝置時,能以良好的重覆性安裝攪拌槳32於預定位置。此外,也可藉由暫時由鍍覆裝置卸下攪拌槳32來輕易地完成調節板34的卸除及重新安裝。For example, when the agitating paddle 32 is replaced, the agitating paddle 32, the paddle holding member 120, and the intermediate shaft 38c can be removed by the plating device through the couplings 122a, 122b without having to remove the shaft holder by the plating device. 40. Therefore, the replacement of the stirring paddle 32 can be completed quickly and easily. Further, when the agitating paddle 32 is reinstalled in the plating apparatus, the agitating paddle 32 can be mounted at a predetermined position with good reproducibility. Further, the removal and reinstallation of the adjustment plate 34 can be easily accomplished by temporarily removing the paddle 32 from the plating apparatus.
第37圖圖示設有調節板移動機構的另一調節板與另一鍍槽。此具體實施例的鍍槽10係包含內槽130與包圍內槽130之外周的外槽132。調節板134係由具有柱形部份136的矩形板狀主體部份138、與比主體部份138寬且與主體部份138之頂部一體成形的夾持部份140構成。在此具體實施例中,調節板134在與基板W平行之橫向(水平)方向的定位係經由夾持部份140用調節板移動機構142來完成。Figure 37 illustrates another adjustment plate with another adjustment plate moving mechanism and another plating tank. The plating tank 10 of this embodiment includes an inner tank 130 and an outer tank 132 surrounding the outer circumference of the inner tank 130. The adjustment plate 134 is composed of a rectangular plate-like main body portion 138 having a cylindrical portion 136, and a clamping portion 140 which is wider than the main body portion 138 and integrally formed with the top portion of the main body portion 138. In this embodiment, the positioning of the adjustment plate 134 in the lateral (horizontal) direction parallel to the substrate W is accomplished by the adjustment plate moving mechanism 142 via the clamping portion 140.
調節板移動機構142包含:經配置成跨越鍍槽10之上開口的調節板支架144;垂直地裝在調節板支架144之外周端上的一對托架146;各自藉由與形成於各托架146之母螺紋嚙合而可水平移動的橫向壓入螺栓(lateral press bolt)148;以及,各自穿透形成於各托架146之無負載孔(unloaded hole)且水平延伸的橫向固定螺栓150。當將調節板134的夾持部份140置於調節板支架144上而將調節板134設定至預定位置時,橫向壓入螺栓148與橫向固定螺栓150的位置會在夾持部份140的外周端表面對面。在夾持部份140之各個外周端表面中之相對向於橫向固定螺栓150的位置,形成各自與橫向固定螺栓150螺紋嚙合的母螺紋。橫向壓入螺栓148係與夾持部份140的外周端表面接觸,而在被栓緊時係向內壓入調節板134。The adjustment plate moving mechanism 142 includes: an adjustment plate bracket 144 configured to span the opening above the plating tank 10; a pair of brackets 146 vertically mounted on the outer peripheral end of the adjustment plate bracket 144; each formed by each of the brackets The female thread of the frame 146 is engaged with a horizontally movable lateral press bolt 148; and each of the laterally extending bolts 150 are formed to penetrate the unloaded holes of each of the brackets 146 and extend horizontally. When the holding portion 140 of the adjusting plate 134 is placed on the adjusting plate bracket 144 to set the adjusting plate 134 to a predetermined position, the position of the lateral pressing bolt 148 and the lateral fixing bolt 150 may be on the outer periphery of the holding portion 140. Opposite the end surface. At a position opposite to the lateral fixing bolt 150 in each of the outer peripheral end surfaces of the grip portion 140, female threads each being threadedly engaged with the lateral fixing bolt 150 are formed. The lateral pressing bolt 148 is in contact with the outer peripheral end surface of the clamping portion 140, and is pressed inwardly into the regulating plate 134 when being tightened.
因此,在安置調節板134的夾持部份140於調節板支架144上以及設定調節板134於預定位置後,可用橫向壓入螺栓148來完成調節板134在與基板W平行之橫向方向中的定位,以及可用橫向固定螺栓150來固定調節板134。可不經由夾持部份140而是經由調節板134中之其他部份來完成藉由橫向壓入螺栓148及橫向固定螺栓150所進行之調節板134的定位。藉由控制具有預定螺距的各橫向壓入螺栓148的迴轉數,可輕易調整調節板134的橫向(水平)移動距離。在橫向壓入螺栓148不與夾持部份140的外周端表面接觸而不壓著調節板134時,各個橫向固定螺栓150係作用為牽引螺栓(draw bolt)。Therefore, after the clamping portion 140 of the adjusting plate 134 is placed on the adjusting plate bracket 144 and the adjusting plate 134 is set at a predetermined position, the adjusting plate 134 can be completed in the lateral direction parallel to the substrate W by laterally pressing the bolt 148. Positioning, and the adjustment plate 134 can be secured with a lateral fixing bolt 150. The positioning of the adjustment plate 134 by laterally pressing the bolts 148 and the lateral fixing bolts 150 can be accomplished without the other portions of the adjustment plate 134 via the clamping portion 140. The lateral (horizontal) moving distance of the regulating plate 134 can be easily adjusted by controlling the number of revolutions of each of the lateral pressing bolts 148 having a predetermined pitch. When the lateral pressing bolt 148 is not in contact with the outer peripheral end surface of the grip portion 140 without pressing the regulating plate 134, each of the lateral fixing bolts 150 functions as a draw bolt.
為了使調節板134朝與基板W平行的橫向方向移動,在調節板134之主體部份138的周面與鍍槽10之內槽130的內周面之間形成間隙。在此具體實施例中,在內槽130中之與調節板134之主體部份138的周面相對向之位置,裝設具有向內形成開口之溝狀凹槽152a的導引構件152,並將調節板134之主體部份138的外周端部份插入導引構件152的凹槽152a。導引構件152係使得調節板134能夠使用導引構件152作為導件來與基板W呈平行地橫向(水平)移動,同時保持調節板134與基板W的距離不變。此外,將調節板134之主體部份138的外周端部份插入導引構件152的凹槽152a係可防止電場由調節板134周邊洩露出。In order to move the regulating plate 134 in the lateral direction parallel to the substrate W, a gap is formed between the circumferential surface of the main body portion 138 of the regulating plate 134 and the inner circumferential surface of the inner groove 130 of the plating tank 10. In this embodiment, a guide member 152 having a groove-shaped recess 152a that opens inward is provided at a position opposite to the circumferential surface of the main body portion 138 of the adjustment plate 134 in the inner groove 130, and The outer peripheral end portion of the main body portion 138 of the adjusting plate 134 is inserted into the recess 152a of the guiding member 152. The guiding member 152 is such that the regulating plate 134 can be moved laterally (horizontally) in parallel with the substrate W using the guiding member 152 as a guide while keeping the distance of the regulating plate 134 from the substrate W constant. Further, the insertion of the outer peripheral end portion of the main body portion 138 of the adjusting plate 134 into the recess 152a of the guiding member 152 prevents the electric field from being leaked from the periphery of the regulating plate 134.
如第38圖所示,在導引構件152的凹槽152a底部與調節板134之主體部份138的周面之間提供一移動間隙(movement gap)t1。例如,移動間隙t1係為1毫米至5毫米,而以1毫米至2毫米為較佳。基於構造上的理由,通常在導引構件152與內槽130的內周面之間形成一間隙t2。在此具體實施例中,為了防止電位線由間隙t2洩露出,係利用密封保持構件154與數個固定螺栓156將電場屏蔽構件158(例如,由橡膠密封件構成)固定於導引構件152上,其中電場屏蔽構件158的自由端係與內槽130的內周面壓力接觸(pressure contact)。儘管在此具體實施例中,電場屏蔽構件158是配置於導引構件152的陽極側,然而它可配置於導引構件152的陰極(基板)側或兩側都有。As shown in Fig. 38, a movement gap t1 is provided between the bottom of the groove 152a of the guiding member 152 and the peripheral surface of the main body portion 138 of the regulating plate 134. For example, the moving gap t1 is 1 mm to 5 mm, and preferably 1 mm to 2 mm. For the reason of construction, a gap t2 is generally formed between the guiding member 152 and the inner circumferential surface of the inner groove 130. In this embodiment, in order to prevent the potential line from leaking out of the gap t2, the electric field shielding member 158 (for example, composed of a rubber seal) is fixed to the guiding member 152 by the sealing holding member 154 and the plurality of fixing bolts 156. Wherein the free end of the electric field shielding member 158 is in pressure contact with the inner peripheral surface of the inner tank 130. Although in this embodiment, the electric field shielding member 158 is disposed on the anode side of the guiding member 152, it may be disposed on the cathode (substrate) side or both sides of the guiding member 152.
儘管在此具體實施例中,是用調節板移動機構142來使調節板134與基板W呈平行地橫向移動,然而也可使調節板134與基板W呈平行地水平及垂直移動。第39圖圖示設計成可使調節板134與基板W呈平行地水平及垂直移動的調節板移動機構160。調節板移動機構160與第37圖調節板移動機構142不同的地方在於:在調節板134之夾持部份140的每個向外突出部份中設有垂直貫穿之式螺旋線圈母螺紋(heli-sert female thread),且使垂直壓入螺栓162(其係與該母螺紋以螺紋嚙合)的下端與調節板支架144的頂面接觸,以及在夾持部份140的各個向外突出部份之端部設有朝鍍槽10之寬度方向延伸的狹縫,並將垂直固定螺栓164插入該狹縫,而且將垂直固定螺栓164的下部與設於調節板支架144的母螺紋嚙合。本具體實施例不使用橫向固定螺栓。Although in this embodiment, the adjustment plate moving mechanism 142 is used to laterally move the adjustment plate 134 in parallel with the substrate W, the adjustment plate 134 may be horizontally and vertically moved in parallel with the substrate W. Fig. 39 illustrates an adjustment plate moving mechanism 160 designed to move the adjustment plate 134 horizontally and vertically in parallel with the substrate W. The adjustment plate moving mechanism 160 is different from the adjustment plate moving mechanism 142 of FIG. 37 in that a vertically penetrating spiral coil female thread is provided in each of the outwardly protruding portions of the clamping portion 140 of the adjustment plate 134 (heli) -sert female thread), and the lower end of the vertical press-in bolt 162 (which is threadedly engaged with the female thread) is in contact with the top surface of the adjustment plate bracket 144, and the outwardly protruding portions of the clamping portion 140 The end portion is provided with a slit extending in the width direction of the plating tank 10, and the vertical fixing bolt 164 is inserted into the slit, and the lower portion of the vertical fixing bolt 164 is engaged with the female thread provided on the adjusting plate bracket 144. This embodiment does not use lateral fixing bolts.
根據此具體實施例,當朝緊固方向旋轉垂直壓入螺栓162時,螺栓162的尖端會與調節板支架144的頂面接觸,藉由相對於作用在頂面上之接觸壓力的反作用力,使調節板134向上移動。反之,當朝放鬆方向旋轉垂直壓入螺栓162時,調節板134會向下移動。在完成調節板134相對於基板W的水平及垂直定位後,垂直固定螺栓164的下部係與設於調節板支架144的母螺紋嚙合而固定調節板134。According to this embodiment, when the vertical pressing bolt 162 is rotated in the fastening direction, the tip end of the bolt 162 comes into contact with the top surface of the adjusting plate bracket 144 by the reaction force with respect to the contact pressure acting on the top surface. The adjustment plate 134 is moved upward. On the contrary, when the vertical pressing bolt 162 is rotated in the loosening direction, the regulating plate 134 is moved downward. After the horizontal and vertical positioning of the adjustment plate 134 with respect to the substrate W is completed, the lower portion of the vertical fixing bolt 164 is engaged with the female screw provided on the adjustment plate holder 144 to fix the adjustment plate 134.
可使用氣缸、伺服馬達等等,而取代壓入螺栓148、162。此外,可結合使用第37圖所示久調節板移動機構142與第39圖所示之調節板移動機構160,以調整調節板134的垂直及水平位置。就此情形而言,供橫向固定螺栓150插入的垂直延伸狹縫可設於托架146,藉此調節板134可用橫向固定螺栓150來固定,而不論調節板134之垂直位移位置為何。也可省略第39圖所示之調節板移動機構160的橫向壓入螺栓148以便只進行調節板134相對於基板W之垂直定位。Instead of the press-in bolts 148, 162, a cylinder, a servo motor or the like can be used. Further, the long adjustment plate moving mechanism 142 shown in Fig. 37 and the adjustment plate moving mechanism 160 shown in Fig. 39 can be used in combination to adjust the vertical and horizontal positions of the adjustment plate 134. In this case, a vertically extending slit for insertion of the lateral fixing bolt 150 may be provided to the bracket 146, whereby the adjusting plate 134 may be fixed by the lateral fixing bolt 150 regardless of the vertical displacement position of the adjusting plate 134. It is also possible to omit the lateral pressing bolt 148 of the adjusting plate moving mechanism 160 shown in Fig. 39 to perform only the vertical positioning of the regulating plate 134 with respect to the substrate W.
藉由用調節板移動機構142微調調節板134相對於基板W的水平位置或用調節板移動機構160微調調節板134相對於基板W的水平及垂直位置,可提高形成於基板W表面上之鍍膜的厚度之面內均勻度。特別是,由於調節板134是配置於靠近基板W的位置,微調調節板134相對於基板W的垂直或水平位置對於提高形成於基板W表面上之鍍膜的厚度之面內均勻度是很重要的。The coating formed on the surface of the substrate W can be improved by fine-tuning the horizontal position of the adjustment plate 134 with respect to the substrate W by the adjustment plate moving mechanism 142 or fine-tuning the horizontal and vertical positions of the adjustment plate 134 with respect to the substrate W by the adjustment plate moving mechanism 160. The in-plane uniformity of the thickness. In particular, since the adjustment plate 134 is disposed at a position close to the substrate W, the vertical or horizontal position of the fine adjustment plate 134 with respect to the substrate W is important for improving the in-plane uniformity of the thickness of the plating film formed on the surface of the substrate W. .
第40圖及第41圖所示的另一調節板是添加以下結構於圖示於第37圖的調節板134。用於安裝輔助調節板170的輔助調節板安裝部件是設在調節板134之主體部份138的陽極側表面。該輔助調節板安裝部件係由固定在對應至輔助調節板170之外周側部(peripheral side portion)之位置的一對側鉤172a、與固定在對應至輔助調節板170之底部角落的一對底鉤172b構成。藉由把輔助調節板170放在調節板134的輔助調節板安裝部件(由該對側鉤172a及該對底鉤172b構成)裡,可將輔助調節板170擺設至相對於調節板134的預定位置處。The other adjustment plate shown in Fig. 40 and Fig. 41 is an adjustment plate 134 having the following structure shown in Fig. 37. The auxiliary adjustment plate mounting member for mounting the auxiliary adjustment plate 170 is provided on the anode side surface of the main body portion 138 of the adjustment plate 134. The auxiliary adjustment plate mounting member is a pair of side hooks 172a fixed at a position corresponding to a peripheral side portion of the auxiliary adjustment plate 170, and a pair of bottoms fixed to a bottom corner corresponding to the auxiliary adjustment plate 170. The hook 172b is constructed. By placing the auxiliary adjustment plate 170 on the auxiliary adjustment plate mounting member of the adjustment plate 134 (consisting of the pair of side hooks 172a and the pair of bottom hooks 172b), the auxiliary adjustment plate 170 can be placed to be predetermined with respect to the adjustment plate 134. Location.
在此具體實施例中,具有用於8吋晶圓之開口134a的調節板(8吋晶圓調節板)係用作調節板134,以及具有用於6吋晶圓之開口170a的輔助調節板(6吋晶圓調節板)係用作輔助調節板170。用此結構,當基板W由8吋晶圓換成6吋晶圓時,只要使輔助調節板(6吋晶圓調節板)170附接於調節板(8吋晶圓調節板)134即可應付此一改變,而不用更換調節板。夾持開口170b是設在輔助調節板170的頂部。In this embodiment, an adjustment plate (8 吋 wafer conditioning plate) having an opening 134a for 8 turns of wafer is used as the conditioning plate 134, and an auxiliary conditioning plate having an opening 170a for the 6-inch wafer. (6 吋 wafer conditioning plate) is used as the auxiliary adjustment plate 170. With this configuration, when the substrate W is changed from 8 吋 wafer to 6 吋 wafer, the auxiliary adjustment plate (6 吋 wafer conditioning plate) 170 can be attached to the adjustment plate (8 吋 wafer adjustment plate) 134. Cope with this change without replacing the adjustment plate. The clamping opening 170b is provided at the top of the auxiliary adjustment plate 170.
調節板134與輔助調節板170間之重疊的橫向尺寸t3、t4與下部垂直尺寸t5各者一般而係不小於5毫米,以不小於10毫米為較佳,在輔助調節板170附接於調節板134時,這可防止陽極26的電力線穿過調節板134與輔助調節板170的間隙然後穿過調節板134的開口134a,而不穿過輔助調節板170的開口170a。The lateral dimension t3, t4 and the lower vertical dimension t5 of the overlap between the adjustment plate 134 and the auxiliary adjustment plate 170 are generally not less than 5 mm, preferably not less than 10 mm, and the auxiliary adjustment plate 170 is attached to the adjustment. At the time of the plate 134, this prevents the power line of the anode 26 from passing through the gap of the adjustment plate 134 and the auxiliary adjustment plate 170 and then passing through the opening 134a of the adjustment plate 134 without passing through the opening 170a of the auxiliary adjustment plate 170.
儘管此具體實施例是使用8吋晶圓調節板與6吋晶圓調節板的組合,然而有可能使用任何兩種調節板(第一及第二調節板)的組合。例如,可在通常情形使用第一調節板,以及在有需要根據所用基板(鍍覆物件)之類型來調整電場分布時,使用與該第一調節板組合的第二調節板。Although this embodiment uses a combination of an 8-inch wafer conditioning plate and a 6-inch wafer conditioning plate, it is possible to use a combination of any two adjustment plates (first and second conditioning plates). For example, the first adjustment plate can be used in the usual case, and the second adjustment plate combined with the first adjustment plate can be used when it is necessary to adjust the electric field distribution depending on the type of substrate (plating object) used.
第42圖及第43圖係圖示本發明鍍覆裝置之另一具體實施例的主要部份。此具體實施例的鍍覆裝置與第1圖所示之鍍覆裝置不同的地方在於:前者使用在頂部有寬夾持部份180的陽極保持器28(如第43圖所示)以及具有寬夾持部份140的調節板134(如第37圖所示),以及陽極保持器28、調節板134及基板保持器24係各自經由夾持部份180、夾持部份140及保持器臂部64(請參考第9圖)而設置在跨越鍍槽10之頂部開口的單一定位/保持部件182上。因此,是在由單一構件構成的定位/保持部件182上安置及設定陽極保持器28之夾持部份180、調節板134之夾持部份140以及基板保持器24之保持器臂部64。這使得有可能牢靠地使藉由陽極保持器28固定之陽極26之中心軸、調節板134之柱形部份136之中心軸以及用基板保持器24固定之基板W的中心軸彼此重合。Figures 42 and 43 show the main parts of another embodiment of the plating apparatus of the present invention. The plating apparatus of this embodiment differs from the plating apparatus shown in Fig. 1 in that the former uses an anode holder 28 having a wide clamping portion 180 at the top (as shown in Fig. 43) and has a width. The adjustment plate 134 of the clamping portion 140 (as shown in FIG. 37), and the anode holder 28, the adjustment plate 134, and the substrate holder 24 are each passed through the clamping portion 180, the clamping portion 140, and the holder arm. The portion 64 (please refer to FIG. 9) is disposed on a single positioning/holding member 182 that spans the top opening of the plating tank 10. Therefore, the holding portion 180 of the anode holder 28, the holding portion 140 of the regulating plate 134, and the holder arm portion 64 of the substrate holder 24 are placed and set on the positioning/holding member 182 composed of a single member. This makes it possible to firmly match the central axis of the anode 26 fixed by the anode holder 28, the central axis of the cylindrical portion 136 of the regulating plate 134, and the central axis of the substrate W fixed by the substrate holder 24 to each other.
儘管在此具體實施例中,是在由單一構件構成的定位/保持部件182上安置陽極保持器28的夾持部份180、調節板134的夾持部份140以及基板保持器24的保持器臂部64,然而也有可能安置陽極保持器28、調節板134及基板保持器24的其他部份於定位/保持部件182上,只要可用定位/保持部件182作為參考來完成陽極保持器28、調節板134及基板保持器24的垂直定位。Although in this embodiment, the holding portion 180 of the anode holder 28, the holding portion 140 of the regulating plate 134, and the holder of the substrate holder 24 are disposed on the positioning/holding member 182 composed of a single member. The arm portion 64, however, it is also possible to position the anode holder 28, the adjustment plate 134, and other portions of the substrate holder 24 on the positioning/holding member 182 as long as the anode holder 28 can be adjusted with the positioning/holding member 182 as a reference. Vertical positioning of the plate 134 and the substrate holder 24.
第44圖及第45圖圖示另一調節板。該調節板係添加以下結構至如第7圖所示的調節板134。一橫隔膜188係藉由固定板(fixing plate)184及固定螺栓186固定至調節板134之主體部份138的陽極側表面,以使得該橫隔膜188可覆蓋整個中央開口134a,橫隔膜188係由金屬離子可穿透過而添加劑不可穿透過之陽離子交換器(cation exchanger)、或功能膜(中性濾膜)構成。藉由以此方式用橫隔膜188覆蓋調節板134的開口134a,可防止內含於鍍液的添加劑在陽極26表面分解及消耗。Figures 44 and 45 illustrate another adjustment plate. The adjustment plate is added to the adjustment plate 134 as shown in Fig. 7 by the following structure. A diaphragm 188 is fixed to the anode side surface of the main body portion 138 of the adjustment plate 134 by a fixing plate 184 and a fixing bolt 186 so that the diaphragm 188 can cover the entire central opening 134a, and the diaphragm 188 is It is composed of a cation exchanger through which metal ions can pass through and an additive cannot penetrate, or a functional membrane (neutral filter membrane). By covering the opening 134a of the regulating plate 134 with the diaphragm 188 in this manner, the additive contained in the plating solution can be prevented from being decomposed and consumed on the surface of the anode 26.
第46圖至第48圖為本發明鍍覆裝置之另一具體實施例。此具體實施例的鍍覆裝置與第1圖鍍覆裝置不同的地方在於:用於可拆卸地固定由柱形部份50及矩形凸緣部份52構成之調節板34的調節板保持器200是裝設於鍍槽10內周面上的預定位置。調節板保持器200係由各具有類似矩形框之形狀(其比調節板34之凸緣部份52稍大些)的固定式保持器(fixed holder)202及可動式保持器204構成。固定式保持器202在其底部及兩側端具有向可動式保持器204突出的突出部份202a。突出部份202a的高度大約與調節板34之凸緣部份52的厚度相同。Figures 46 to 48 show another embodiment of the plating apparatus of the present invention. The plating apparatus of this embodiment differs from the plating apparatus of Fig. 1 in that an adjustment plate holder 200 for detachably fixing the regulating plate 34 composed of the cylindrical portion 50 and the rectangular flange portion 52 is provided. It is installed at a predetermined position on the inner circumferential surface of the plating tank 10. The adjustment plate holder 200 is composed of a fixed holder 202 and a movable holder 204 each having a shape similar to a rectangular frame which is slightly larger than the flange portion 52 of the adjustment plate 34. The fixed holder 202 has a protruding portion 202a that protrudes toward the movable holder 204 at its bottom and both side ends. The height of the protruding portion 202a is approximately the same as the thickness of the flange portion 52 of the adjustment plate 34.
固定式保持器202在其底部及兩側端固定於鍍槽10的內周面上,而可動式保持器204在其下端係經由鉸鏈銷(hinge pin)206而可旋轉地支承於鍍槽10上。當可動式保持器204向固定式保持器202旋轉時,可動式保持器204的底部及兩側端會與固定式保持器202之突出部份202a的頂部接觸,藉此在固定式保持器202與可動式保持器204之間可形成一待安置調節板34於其中的向上開放空間,其厚度大約與調節板34之凸緣部份52的厚度相同。The fixed holder 202 is fixed to the inner peripheral surface of the plating tank 10 at its bottom and both side ends, and the movable holder 204 is rotatably supported at the lower end thereof via a hinge pin 206 to the plating tank 10 on. When the movable holder 204 is rotated toward the fixed holder 202, the bottom and both side ends of the movable holder 204 are in contact with the top of the protruding portion 202a of the stationary holder 202, whereby the stationary holder 202 is in the stationary holder 202. An upwardly open space in which the adjustment plate 34 is to be placed may be formed with the movable holder 204, the thickness of which is approximately the same as the thickness of the flange portion 52 of the adjustment plate 34.
下端與鍍槽10底部彈性接觸的電場屏蔽構件208(例如,由橡膠片構成的)係附接於可動式保持器204的下端以便防止電場在可動式保持器204、鍍槽10底部之間洩露出。An electric field shielding member 208 (for example, composed of a rubber sheet) whose lower end is in elastic contact with the bottom of the plating tank 10 is attached to the lower end of the movable holder 204 to prevent electric field from leaking between the movable holder 204 and the bottom of the plating tank 10. Out.
根據此具體實施例,可將調節板34固定於調節板保持器200,其中,係藉由安置調節板34於固定式保持器202、可動式保持器204之間,並使可動式保持器204向固定式保持器202旋轉以及例如用夾持器(未圖示)固定可動式保持器204而將調節板34的外周端夾在固定式保持器202與可動式保持器204之間。以此方式將調節板34保持於調節板保持器200中,可防止電場在固定式保持器202與可動式保持器204之間洩露出。According to this embodiment, the adjustment plate 34 can be fixed to the adjustment plate holder 200 by placing the adjustment plate 34 between the fixed holder 202 and the movable holder 204, and the movable holder 204 is provided. The outer peripheral end of the regulating plate 34 is sandwiched between the fixed holder 202 and the movable holder 204 by rotating the stationary holder 202 and fixing the movable holder 204 with a holder (not shown), for example. Holding the adjustment plate 34 in the adjustment plate holder 200 in this manner prevents an electric field from leaking between the fixed holder 202 and the movable holder 204.
可藉由下述方式由調節板保持器200釋出調節板34:首先,鬆開可動式保持器204,然後旋轉可動式保持器204離開固定式保持器202,如第48圖所示,然後由可動式保持器204向上傾斜抽出調節板34。The adjustment plate 34 can be released from the adjustment plate holder 200 by first loosening the movable holder 204 and then rotating the movable holder 204 away from the fixed holder 202, as shown in Fig. 48, and then The adjustment plate 34 is pulled upward by the movable holder 204.
藉由在鍍槽10預定位置裝設可拆卸地保持調節板34的調節板保持器200,可簡單快速地完成調節板34的更換。By installing the adjustment plate holder 200 that detachably holds the adjustment plate 34 at a predetermined position of the plating tank 10, the replacement of the adjustment plate 34 can be completed simply and quickly.
儘管已用具體實施例來描述本發明,熟諳此藝者應瞭解,本發明不受限於上述特定具體實施例,而是希望涵蓋落在本發明概念內的修改。While the invention has been described in terms of specific embodiments, it is understood that the invention is not limited to the specific embodiments described above, but is intended to cover modifications that fall within the inventive concept.
10...鍍槽10. . . Plating tank
10a...側板10a. . . Side panel
12...溢流槽12. . . Overflow trough
14...泵14. . . Pump
16...鍍液供給路線16. . . Plating solution supply route
16a,16b...分叉路線16a, 16b. . . Bifurcation route
18...鍍液供給入口18. . . Plating solution supply inlet
20...恆溫單元20. . . Thermostatic unit
22...過濾器twenty two. . . filter
24...基板保持器twenty four. . . Substrate holder
26...陽極26. . . anode
28...陽極保持器28. . . Anode holder
30...鍍覆電源30. . . Plating power supply
32...攪拌槳32. . . mixer
32a...狹縫32a. . . Slit
32b...條狀部份32b. . . Strip
34,134...調節板34,134. . . Adjustment board
36...夾子36. . . Clip
38...軸桿38. . . Shaft
38a,38b...右端及左端軸桿38a, 38b. . . Right and left shafts
38c...中間軸桿38c. . . Intermediate shaft
40...軸桿保持器40. . . Shaft retainer
42...攪拌槳驅動部件42. . . Stirring paddle drive unit
44...馬達44. . . motor
46...控制部件46. . . Control unit
50...柱形部份50. . . Cylindrical part
50a...部份50a. . . Part
52...矩形凸緣部份52. . . Rectangular flange
60...保持器夾鉗60. . . Holder clamp
62...保持器支架62. . . Holder bracket
62a...溝狀開口62a. . . Grooved opening
64...保持器臂部64. . . Holder arm
66...臂側接點66. . . Arm side contact
68...支架側接點68. . . Bracket side joint
70...臂側磁石70. . . Arm side magnet
72...支架側磁石72. . . Bracket side magnet
80...分離板80. . . Separation plate
80a...鍍液通行孔80a. . . Plating liquid passage hole
82...屏蔽板82. . . Shield
82a...半圓形開口82a. . . Semicircular opening
84...基板處理室84. . . Substrate processing chamber
86...鍍液分佈室86. . . Plating solution distribution room
90...分離板支架90. . . Separation plate bracket
92...襯墊92. . . pad
94,100...電場屏蔽構件94,100. . . Electric field shielding member
96...調節板固定用開縫板96. . . Adjusting plate fixing slit plate
96a,96b...狹縫96a, 96b. . . Slit
98...固定螺絲98. . . Fixing screw
110...陽極側溶液分佈室110. . . Anode side solution distribution chamber
112...陰極側溶液分佈室112. . . Cathode side solution distribution chamber
114...主閥114. . . Main valve
116...流量計116. . . Flow meter
118a,118b...閥118a, 118b. . . valve
120...攪拌槳保持構件120. . . Stirring paddle retaining member
122a,122b...聯結器122a, 122b. . . Coupling
130...內槽130. . . Inner slot
132...外槽132. . . Outer slot
134a,170a...開口134a, 170a. . . Opening
136...柱形部份136. . . Cylindrical part
138...矩形板狀主體部份138. . . Rectangular plate body part
140...夾持部份140. . . Clamping part
142,160...調節板移動機構142,160. . . Adjustment plate moving mechanism
144...調節板支架144. . . Adjustment plate bracket
146...托架146. . . bracket
148...橫向壓入螺栓148. . . Lateral press-in bolt
150...橫向固定螺栓150. . . Lateral fixing bolt
152...導引構件152. . . Guide member
152a...溝狀凹槽152a. . . Grooved groove
154...密封保持構件154. . . Seal holding member
156...固定螺栓156. . . Fixing bolts
158...電場屏蔽構件158. . . Electric field shielding member
162...垂直壓入螺栓162. . . Press the bolt vertically
164...垂直固定螺栓164. . . Vertical fixing bolt
170...輔助調節板170. . . Auxiliary adjustment board
170b...夾持開口170b. . . Clamping opening
172a...側鉤172a. . . Side hook
172b...底鉤172b. . . Bottom hook
180...寬夾持部份180. . . Wide clamping part
182...定位/保持部件182. . . Positioning/holding part
184...固定板184. . . Fixed plate
186...固定螺栓186. . . Fixing bolts
188...橫隔膜188. . . Diaphragm
200...調節板保持器200. . . Adjustment plate holder
202...固定式保持器202. . . Fixed holder
202a...突出部份202a. . . Prominent part
204...可動式保持器204. . . Movable retainer
206...鉸鏈銷206. . . Hinge pin
208...電場屏蔽構件208. . . Electric field shielding member
B...寬度B. . . width
H...橫向長度H. . . Lateral length
L1 ,L2 ...垂直長度L 1 , L 2 . . . Vertical length
Q...鍍液Q. . . Plating solution
W...基板(鍍覆物件)W. . . Substrate (plated object)
St...往復距離St. . . Reciprocating distance
t...厚度(板厚)t. . . Thickness (thickness)
θ...傾斜角θ. . . Tilt angle
t1...移動間隙T1. . . Moving gap
t2...間隙T2. . . gap
t3,t4...橫向尺寸T3, t4. . . Horizontal size
t5...下部垂直尺寸T5. . . Lower vertical dimension
第1圖為本發明鍍覆裝置之一具體實施例的垂直剖面正視圖;1 is a vertical cross-sectional elevation view of one embodiment of a plating apparatus of the present invention;
第2圖為使用於第1圖鍍覆裝置之攪拌槳的平面圖;Figure 2 is a plan view of a stirring paddle used in the plating apparatus of Figure 1;
第3圖為沿著第2圖之直線A-A繪出的橫截面圖;Figure 3 is a cross-sectional view taken along line A-A of Figure 2;
第4A圖與第4B圖各自圖示與第3圖對應的攪拌槳變體;4A and 4B each illustrate a stirring paddle variant corresponding to FIG. 3;
第5圖的示意圖係圖示第1圖鍍覆裝置的攪拌槳驅動機構與鍍槽;Figure 5 is a schematic view showing the paddle drive mechanism and plating tank of the plating apparatus of Figure 1;
第6圖的平面圖係圖示攪拌槳的行程末端(stroke end);The plan view of Fig. 6 is a diagram showing the stroke end of the stirring paddle;
第7圖為使用於第1圖鍍覆裝置之調節板的透視圖;Figure 7 is a perspective view of an adjustment plate used in the plating apparatus of Figure 1;
第8圖為另一調節板的側視圖;Figure 8 is a side view of another adjustment plate;
第9圖係圖示第1圖鍍覆裝置之基板保持器與鍍槽之保持器支架的關係;Figure 9 is a view showing the relationship between the substrate holder of the plating apparatus of Fig. 1 and the holder holder of the plating tank;
第10圖的放大透視圖係圖示第1圖之鍍覆裝置中之保持器臂部與其附近;10 is an enlarged perspective view showing the retainer arm portion of the plating apparatus of FIG. 1 and its vicinity;
第11圖的橫截面圖係圖示相接觸著的保持器臂部與保持器支架;Figure 11 is a cross-sectional view showing the holder arm and the holder bracket that are in contact with each other;
第12圖為第11圖的右側視圖;Figure 12 is a right side view of Figure 11;
第13圖為另一保持器支架的透視圖;Figure 13 is a perspective view of another retainer bracket;
第14圖為使用於第1圖鍍覆裝置之分離板的平面圖;Figure 14 is a plan view of a separating plate used in the plating apparatus of Figure 1;
第15圖為分離板之一變體的平面圖;Figure 15 is a plan view showing a variation of one of the separation plates;
第16圖為圖示安裝分離板於第1圖鍍覆裝置中之鍍槽之側板上的橫截面圖;Figure 16 is a cross-sectional view showing the side plate of the plating tank in which the separating plate is mounted in the plating apparatus of Figure 1;
第17圖的透視圖係圖示第1圖鍍覆裝置中之分離板、屏蔽板及鍍槽底部的關係;Figure 17 is a perspective view showing the relationship between the separating plate, the shielding plate and the bottom of the plating tank in the plating apparatus of Figure 1;
第18圖的透視圖係圖示分離板、屏蔽板及鍍槽底部的另一個關係;Figure 18 is a perspective view showing another relationship of the separating plate, the shielding plate and the bottom of the plating tank;
第19圖的橫截面圖係圖示第1圖鍍覆裝置中之調節板的凸緣部份與分離板的關係;Figure 19 is a cross-sectional view showing the relationship between the flange portion of the adjusting plate in the plating apparatus of Figure 1 and the separating plate;
第20圖的鍍槽俯視圖係圖示用可調整調節板與基板之距離的方式安裝調節板於鍍槽的具體實施例;The top view of the plating tank of FIG. 20 illustrates a specific embodiment in which the adjusting plate is mounted on the plating tank by adjusting the distance between the adjusting plate and the substrate;
第21圖為用於形成凸塊之鍍銅製程的流程圖;Figure 21 is a flow chart of a copper plating process for forming bumps;
第22圖圖示用以下方式形成的凸塊形狀:以8ASD的電流密度進行鍍覆同時藉由使攪拌槳以平均絕對值等於20公分/秒的速度移動來攪拌鍍液;Figure 22 illustrates a bump shape formed by plating at a current density of 8 ASD while agitating the plating solution by moving the stirring paddle at a speed of an average absolute value equal to 20 cm/sec;
第23圖圖示用以下方式形成的凸塊形狀:以8ASD的電流密度進行鍍覆同時藉由使攪拌槳以平均絕對值等於83公分/秒的速度移動來攪拌鍍液;Figure 23 illustrates a bump shape formed by plating at a current density of 8 ASD while agitating the plating solution by moving the stirring paddle at a speed of an average absolute value equal to 83 cm/sec;
第24圖為用以下方式形成的凸塊的顯微照片:在進行鍍覆時使厚2毫米的攪拌槳以平均絕對值等於40公分/秒的速度移動來攪拌鍍液;Figure 24 is a photomicrograph of a bump formed by moving a 2 mm thick paddle at a speed of an average absolute value of 40 cm/sec to agitate the plating solution;
第25圖為用以下方式形成的凸塊的顯微照片:在進行鍍覆時使厚4毫米的攪拌槳以平均絕對值等於40公分/秒的速度移動來攪拌鍍液;Figure 25 is a photomicrograph of a bump formed by moving a 4 mm thick paddle at a speed of an average absolute value of 40 cm/sec to agitate the plating solution;
第26圖為用以下方式形成的凸塊的顯微照片:在進行鍍覆時使厚4毫米的攪拌槳以平均絕對值等於67公分/秒的速度移動來攪拌鍍液;Figure 26 is a photomicrograph of a bump formed by moving a 4 mm thick paddle at a speed of an average absolute value equal to 67 cm/sec to agitate the plating solution;
第27圖為用以下方式形成的凸塊的顯微照片:在進行鍍覆時使厚4毫米的攪拌槳以平均絕對值等於83公分/秒的速度移動來攪拌鍍液;Figure 27 is a photomicrograph of a bump formed by moving a 4 mm thick paddle at a speed of an average absolute value equal to 83 cm/sec to agitate the plating solution;
第28圖為用以下方式形成的凸塊的顯微照片:在進行鍍覆時使厚3毫米的攪拌槳以平均絕對值等於83公分/秒的速度移動來攪拌鍍液;Figure 28 is a photomicrograph of a bump formed by moving a 3 mm thick paddle at a speed of an average absolute value of 83 cm/sec to agitate the plating solution;
第29圖為用以下方式形成之凸塊的高度在基板之分布圖:使用不在分離板下裝設屏蔽板的鍍槽來進行鍍覆;Figure 29 is a distribution diagram of the height of the bump formed in the following manner on the substrate: plating is performed using a plating tank which is not provided with a shield plate under the separation plate;
第30圖為用以下方式形成之凸塊的高度在基板之分布圖:使用在分離板下設有屏蔽板的鍍槽來進行鍍覆;Figure 30 is a distribution diagram of the height of the bump formed in the following manner on the substrate: plating is performed using a plating tank provided with a shield plate under the separation plate;
第31圖的曲線係圖示用以下方式形成之凸塊高度在基板的面內均勻度:使用在中央有開口且與基板相距35毫米的5毫米厚扁平調節板來進行鍍覆,同時使攪拌槳以平均絕對值等於20公分/秒的速度移動來攪拌鍍液;The graph of Fig. 31 shows the in-plane uniformity of the bump height formed in the following manner by using a 5 mm thick flat adjustment plate having an opening at the center and 35 mm from the substrate while stirring The paddle is moved at an average absolute value equal to 20 cm/sec to agitate the plating solution;
第32圖的曲線係圖示用以下方式形成之凸塊高度在基板的面內均勻度:使用與基板相距15毫米的第7圖所示之調節板來進行鍍覆,同時使攪拌槳以平均絕對值等於83公分/秒的速度移動來攪拌鍍液;The graph of Fig. 32 shows the in-plane uniformity of the height of the bump formed in the following manner by using the adjustment plate shown in Fig. 7 which is 15 mm apart from the substrate, while averaging the stirring paddle The absolute value is equal to 83 cm / sec to move the stirring solution;
第33圖圖示第31圖及第32圖所指的X軸與Y軸;Figure 33 illustrates the X-axis and Y-axis indicated in Figures 31 and 32;
第34圖為本發明鍍覆裝置之另一具體實施例的垂直剖面正視圖;Figure 34 is a vertical sectional elevational view of another embodiment of the plating apparatus of the present invention;
第35圖的平面圖係圖示另一攪拌槳驅動機構與鍍槽;Figure 35 is a plan view showing another paddle drive mechanism and a plating tank;
第36圖為第35圖的垂直剖面正視圖;Figure 36 is a vertical sectional front view of Figure 35;
第37圖的垂直剖面側視圖係圖示設有一調節板移動機構的另一調節板與另一鍍槽;Figure 37 is a vertical sectional side view showing another adjustment plate and another plating tank provided with an adjustment plate moving mechanism;
第38圖為沿著第37圖之直線B-B繪出的橫截面圖;Figure 38 is a cross-sectional view taken along line B-B of Figure 37;
第39圖圖示設有另一調節板移動機構的調節板之主要部份;Figure 39 illustrates a major portion of an adjustment plate provided with another adjustment plate moving mechanism;
第40圖為另一調節板的前視圖;Figure 40 is a front view of another adjustment plate;
第41圖為第40圖的平面圖;Figure 41 is a plan view of Figure 40;
第42圖為本發明鍍覆裝置之另一具體實施例的垂直剖面正視圖;Figure 42 is a vertical sectional elevational view of another embodiment of the plating apparatus of the present invention;
第43圖的前視圖係圖示使用於第42圖所示之鍍覆裝置的陽極保持器與定位/保持部件;The front view of Fig. 43 illustrates the anode holder and the positioning/holding member used in the plating apparatus shown in Fig. 42;
第44圖為另一調節板的前視圖;Figure 44 is a front view of another adjustment plate;
第45圖為沿著第44圖之直線C-C繪出的橫截面圖;Figure 45 is a cross-sectional view taken along line C-C of Figure 44;
第46圖為本發明鍍覆裝置之另一具體實施例的垂直剖面正視圖;Figure 46 is a vertical sectional elevational view of another embodiment of the plating apparatus of the present invention;
第47圖的橫截面視圖係圖示第46圖所示之鍍覆裝置的調節板保持器與調節板;以及Figure 47 is a cross-sectional view showing the adjustment plate holder and the adjustment plate of the plating apparatus shown in Figure 46;
第48圖的剖視圖係圖示在調節板由調節板保持器釋出時的調節板保持器。The cross-sectional view of Fig. 48 illustrates the adjustment plate holder when the adjustment plate is released by the adjustment plate holder.
10...鍍槽10. . . Plating tank
12...溢流槽12. . . Overflow trough
14...泵14. . . Pump
16...鍍液供給路線16. . . Plating solution supply route
18...鍍液供給入口18. . . Plating solution supply inlet
20...恆溫單元20. . . Thermostatic unit
22...過濾器twenty two. . . filter
24...基板保持器twenty four. . . Substrate holder
26...陽極26. . . anode
28...陽極保持器28. . . Anode holder
30...鍍覆電源30. . . Plating power supply
32...攪拌槳32. . . mixer
34...調節板34. . . Adjustment board
50...柱形部份50. . . Cylindrical part
52...矩形凸緣部份52. . . Rectangular flange
80...分離板80. . . Separation plate
82...屏蔽板82. . . Shield
84...基板處理室84. . . Substrate processing chamber
86...鍍液分佈室86. . . Plating solution distribution room
Q...鍍液Q. . . Plating solution
W...基板(鍍覆物件)W. . . Substrate (plated object)
Claims (63)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007313730 | 2007-12-04 | ||
| JP2008292174A JP5184308B2 (en) | 2007-12-04 | 2008-11-14 | Plating apparatus and plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200936818A TW200936818A (en) | 2009-09-01 |
| TWI457471B true TWI457471B (en) | 2014-10-21 |
Family
ID=40733742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097147071A TWI457471B (en) | 2007-12-04 | 2008-12-04 | Plating device and plating method |
Country Status (4)
| Country | Link |
|---|---|
| JP (5) | JP5184308B2 (en) |
| KR (3) | KR101493380B1 (en) |
| CN (5) | CN108588800B (en) |
| TW (1) | TWI457471B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI668335B (en) * | 2018-08-22 | 2019-08-11 | 華紹國際有限公司 | Plating device and plating method |
| TWI707988B (en) * | 2018-10-30 | 2020-10-21 | 台灣積體電路製造股份有限公司 | Plating apparatus and plating method |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5184308B2 (en) * | 2007-12-04 | 2013-04-17 | 株式会社荏原製作所 | Plating apparatus and plating method |
| CN102453944A (en) * | 2010-10-19 | 2012-05-16 | 上海嘉捷通电路科技有限公司 | Novel removable electroplating device |
| CN103184491A (en) * | 2011-12-28 | 2013-07-03 | 北京有色金属研究总院 | Electroplating apparatus applying external magnetic field on plating member and method |
| JP5981534B2 (en) * | 2012-04-20 | 2016-08-31 | 株式会社Jcu | Substrate plating jig and plating apparatus using the same |
| MX352269B (en) * | 2012-11-01 | 2017-11-16 | Yuken Ind Co Ltd | Plating device, nozzle anode unit, method for manufacturing plating member, and device for fixing plated member. |
| CN103849915B (en) * | 2012-12-06 | 2016-08-31 | 北大方正集团有限公司 | Electroplanting device and pcb board via copper coating |
| JP2014237865A (en) * | 2013-06-06 | 2014-12-18 | 株式会社荏原製作所 | Electrolytic copper plating apparatus |
| CN104562162B (en) * | 2013-10-21 | 2018-03-23 | 欣兴电子股份有限公司 | diaphragm device |
| WO2015119029A1 (en) | 2014-02-06 | 2015-08-13 | 株式会社 荏原製作所 | Substrate holder, plating apparatus, and plating method |
| JP6285199B2 (en) * | 2014-02-10 | 2018-02-28 | 株式会社荏原製作所 | Anode holder and plating apparatus |
| US20150247251A1 (en) * | 2014-02-28 | 2015-09-03 | Applied Materials, Inc. | Methods for electrochemical deposition of multi-component solder using cation permeable barrier |
| KR102194716B1 (en) * | 2014-03-06 | 2020-12-23 | 삼성전기주식회사 | Plating apparatus |
| CN104005077B (en) * | 2014-05-14 | 2016-11-09 | 上海交通大学 | Electroplating device and electroplating method for optimizing temperature field distribution |
| JP6411943B2 (en) | 2014-05-26 | 2018-10-24 | 株式会社荏原製作所 | Substrate electrolytic treatment apparatus and paddle used for the substrate electrolytic treatment apparatus |
| JP6335763B2 (en) * | 2014-11-20 | 2018-05-30 | 株式会社荏原製作所 | Plating apparatus and plating method |
| JP6335777B2 (en) | 2014-12-26 | 2018-05-30 | 株式会社荏原製作所 | Substrate holder, method for holding substrate with substrate holder, and plating apparatus |
| JP6459597B2 (en) * | 2015-02-16 | 2019-01-30 | 株式会社村田製作所 | Electrolytic plating equipment |
| JP6408936B2 (en) * | 2015-03-05 | 2018-10-17 | 株式会社荏原製作所 | Plating equipment |
| JP6407093B2 (en) * | 2015-04-28 | 2018-10-17 | 株式会社荏原製作所 | Electrolytic treatment equipment |
| JP6399973B2 (en) | 2015-06-18 | 2018-10-03 | 株式会社荏原製作所 | Method for adjusting plating apparatus and measuring apparatus |
| KR101667959B1 (en) * | 2015-07-14 | 2016-10-24 | 한국기계연구원 | A plating jig |
| WO2017021489A1 (en) * | 2015-08-05 | 2017-02-09 | Atotech Deutschland Gmbh | Substrate holder reception apparatus |
| JP6317299B2 (en) * | 2015-08-28 | 2018-04-25 | 株式会社荏原製作所 | Plating apparatus, plating method, and substrate holder |
| JP6746185B2 (en) * | 2016-02-01 | 2020-08-26 | アスカコーポレーション株式会社 | Jig for semiconductor wafer plating |
| CN105648507A (en) * | 2016-03-24 | 2016-06-08 | 河南理工大学 | Device for electro-depositing planar parts |
| CN105648514B (en) * | 2016-03-24 | 2017-09-12 | 河南理工大学 | A kind of rabbling mechanism for electro-deposition |
| JP6678490B2 (en) * | 2016-03-28 | 2020-04-08 | 株式会社荏原製作所 | Plating method |
| JP6795915B2 (en) * | 2016-06-10 | 2020-12-02 | 株式会社荏原製作所 | Feeder and plating device that can supply power to the anode |
| JP6754636B2 (en) * | 2016-08-12 | 2020-09-16 | 株式会社ユアサメンブレンシステム | Septal member |
| JP6713916B2 (en) | 2016-12-01 | 2020-06-24 | 株式会社荏原製作所 | Substrate holder, plating apparatus, and substrate holder manufacturing method |
| JP6761763B2 (en) * | 2017-02-06 | 2020-09-30 | 株式会社荏原製作所 | Paddles, plating equipment with the paddles, and plating methods |
| JP6860406B2 (en) | 2017-04-05 | 2021-04-14 | 株式会社荏原製作所 | Semiconductor manufacturing equipment, failure prediction method for semiconductor manufacturing equipment, and failure prediction program for semiconductor manufacturing equipment |
| JP2017186677A (en) * | 2017-05-29 | 2017-10-12 | 株式会社荏原製作所 | Electrolytic copper plating equipment |
| JP6993115B2 (en) * | 2017-06-16 | 2022-01-13 | 株式会社荏原製作所 | Plating equipment |
| JP6986921B2 (en) * | 2017-10-12 | 2021-12-22 | 株式会社荏原製作所 | Plating equipment and plating method |
| JP6329681B1 (en) * | 2017-10-31 | 2018-05-23 | 株式会社荏原製作所 | Plating apparatus and plating method |
| JP6890528B2 (en) * | 2017-12-15 | 2021-06-18 | 株式会社荏原製作所 | Plating device with wave-dissipating member and wave-dissipating member that can be attached to the paddle |
| JP6979900B2 (en) * | 2018-02-13 | 2021-12-15 | 株式会社荏原製作所 | A storage medium that stores a board holding member, a board processing device, a control method for the board processing device, and a program. |
| JP6942072B2 (en) * | 2018-02-22 | 2021-09-29 | 株式会社荏原製作所 | Plating equipment |
| JP7005381B2 (en) * | 2018-02-26 | 2022-01-21 | 三菱電機株式会社 | Semiconductor manufacturing equipment and methods for manufacturing semiconductor equipment |
| JP6966958B2 (en) | 2018-03-01 | 2021-11-17 | 株式会社荏原製作所 | Plating equipment with paddles and paddles used to stir the plating solution |
| JP6790016B2 (en) * | 2018-04-10 | 2020-11-25 | 上村工業株式会社 | Surface treatment equipment, surface treatment method and paddle |
| TWI690620B (en) * | 2018-08-22 | 2020-04-11 | 華紹國際有限公司 | Electroless plating device and manufacturing method of metallized substrate |
| JP7193381B2 (en) * | 2019-02-28 | 2022-12-20 | 株式会社荏原製作所 | Plating equipment |
| JP7183111B2 (en) * | 2019-05-17 | 2022-12-05 | 株式会社荏原製作所 | Plating method, insoluble anode for plating, and plating apparatus |
| JP7173932B2 (en) | 2019-06-10 | 2022-11-16 | 株式会社荏原製作所 | Anode holder and plating equipment |
| US11608563B2 (en) * | 2019-07-19 | 2023-03-21 | Asmpt Nexx, Inc. | Electrochemical deposition systems |
| CN110804755A (en) * | 2019-08-27 | 2020-02-18 | 宁波华远电子科技有限公司 | Electroplating apparatus |
| JP7383441B2 (en) * | 2019-10-07 | 2023-11-20 | 上村工業株式会社 | Surface treatment equipment, surface treatment method and paddle |
| JP7316908B2 (en) * | 2019-10-30 | 2023-07-28 | 株式会社荏原製作所 | anode assembly |
| CN110629264B (en) * | 2019-11-11 | 2021-09-24 | 生益电子股份有限公司 | A PCB electroplating device |
| CN110804757B (en) * | 2019-11-27 | 2024-02-20 | 镇江耐丝新型材料有限公司 | Copper particle leveling tool used in copper plating tank |
| JP7460504B2 (en) * | 2020-10-20 | 2024-04-02 | 株式会社荏原製作所 | Plating Equipment |
| CN114981485B (en) | 2020-12-21 | 2023-03-28 | 株式会社荏原制作所 | Plating apparatus and method for stirring plating solution |
| CN114855244A (en) * | 2021-02-04 | 2022-08-05 | 盛美半导体设备(上海)股份有限公司 | Electroplating device and electroplating method |
| US12152312B2 (en) | 2021-02-25 | 2024-11-26 | Ebara Corporation | Plating apparatus and air bubble removing method of plating apparatus |
| WO2022190243A1 (en) | 2021-03-10 | 2022-09-15 | 株式会社荏原製作所 | Plating apparatus and plating method |
| CN115110136B (en) * | 2021-03-19 | 2024-03-08 | 先进半导体材料(深圳)有限公司 | Electroplating apparatus and electroplating method |
| CN114262927B (en) * | 2021-11-25 | 2023-06-06 | 绍兴同芯成集成电路有限公司 | Electroplating device and electroplating method for substrate |
| CN114737241B (en) * | 2022-05-16 | 2023-10-20 | 广德正大电子科技有限公司 | Gilding rectifier distribution structure for improving electroplating uniformity |
| CN115491740B (en) * | 2022-11-01 | 2024-06-21 | 中国工程物理研究院材料研究所 | Static outer wall tubular uranium electroplating device |
| KR102723221B1 (en) * | 2022-12-09 | 2024-10-30 | 가부시키가이샤 에바라 세이사꾸쇼 | Plating device |
| CN119221083A (en) * | 2023-06-29 | 2024-12-31 | 盛美半导体设备(上海)股份有限公司 | Stirring mechanism of electroplating equipment, electroplating equipment and electroplating method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5516412A (en) * | 1995-05-16 | 1996-05-14 | International Business Machines Corporation | Vertical paddle plating cell |
| US20040007467A1 (en) * | 2002-05-29 | 2004-01-15 | Mchugh Paul R. | Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces |
| US20040262150A1 (en) * | 2002-07-18 | 2004-12-30 | Toshikazu Yajima | Plating device |
| US20050006241A1 (en) * | 2003-07-01 | 2005-01-13 | Mchugh Paul R. | Paddles and enclosures for enhancing mass transfer during processing of microfeature workpieces |
| US20060131162A1 (en) * | 2003-03-24 | 2006-06-22 | Alexander Schroeck | Device and the parts thereof for producing electrodeposited dental shaped pieces |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5633500A (en) * | 1979-08-28 | 1981-04-03 | Fujitsu Ltd | Averaging apparatus of distribution of plating electric current |
| JPS5767192A (en) * | 1980-10-11 | 1982-04-23 | C Uyemura & Co Ltd | High-speed plating method |
| JPS61116768U (en) * | 1984-12-28 | 1986-07-23 | ||
| JPH02145791A (en) * | 1988-11-28 | 1990-06-05 | Eagle Ind Co Ltd | Method and equipment for plating and shielding plate for plating |
| JPH0444373U (en) * | 1990-08-15 | 1992-04-15 | ||
| JP3109548B2 (en) * | 1992-07-02 | 2000-11-20 | イビデン株式会社 | Electroplating equipment |
| JPH09273000A (en) * | 1996-04-09 | 1997-10-21 | Hitachi Kyowa Eng Kk | Plating device |
| CN2270737Y (en) * | 1996-05-21 | 1997-12-17 | 王明臣 | Internal hole plating iron device |
| JPH11229196A (en) * | 1998-02-12 | 1999-08-24 | Mitsubishi Shindoh Co Ltd | Electroplating apparatus and electroplating method |
| US20030038035A1 (en) * | 2001-05-30 | 2003-02-27 | Wilson Gregory J. | Methods and systems for controlling current in electrochemical processing of microelectronic workpieces |
| DE19951324C2 (en) * | 1999-10-20 | 2003-07-17 | Atotech Deutschland Gmbh | Method and device for the electrolytic treatment of electrically conductive surfaces of pieces of plate and foil material separated from one another and application of the method |
| JP2001200392A (en) * | 2000-01-20 | 2001-07-24 | Nec Corp | Plating device |
| JP2001329400A (en) * | 2000-05-17 | 2001-11-27 | Hitachi Kyowa Engineering Co Ltd | Plating device and plating method |
| US6976973B1 (en) * | 2000-10-12 | 2005-12-20 | Baxter International Inc. | Peritoneal dialysis catheters |
| CN1153851C (en) * | 2001-02-28 | 2004-06-16 | 研能科技股份有限公司 | Apparatus and method for controlling power line distribution |
| JP4759834B2 (en) * | 2001-04-25 | 2011-08-31 | 凸版印刷株式会社 | Electroplating equipment for film carriers |
| JP4368543B2 (en) * | 2001-07-25 | 2009-11-18 | シャープ株式会社 | Plating method and plating apparatus |
| JP2003226997A (en) * | 2002-02-06 | 2003-08-15 | Sony Corp | Plating jig for semiconductor wafer |
| TWM240034U (en) * | 2002-02-19 | 2004-08-01 | Advanced Semiconductor Eng | Electric field adjustment device of electroplating tank |
| JP2003247098A (en) * | 2002-02-21 | 2003-09-05 | Ebara Corp | Plating device |
| CN1477238A (en) * | 2002-08-20 | 2004-02-25 | 株式会社Smc | Electroplanting device |
| JP2004225129A (en) * | 2003-01-24 | 2004-08-12 | Ebara Corp | Plating method and plating device |
| KR20060024792A (en) * | 2003-06-06 | 2006-03-17 | 세미툴,인크 | Methods and Systems for Processing Microfeature Workpieces with Flow Agitators and / or Multiple Electrodes |
| JP3723963B2 (en) * | 2003-06-06 | 2005-12-07 | 三井金属鉱業株式会社 | Plating apparatus and film carrier tape manufacturing method for electronic component mounting |
| JP4136830B2 (en) * | 2003-07-10 | 2008-08-20 | 株式会社荏原製作所 | Plating equipment |
| JP2005089812A (en) * | 2003-09-17 | 2005-04-07 | Casio Comput Co Ltd | Plating apparatus and semiconductor substrate plating method |
| CN1546737A (en) * | 2003-11-28 | 2004-11-17 | 魏连o | One side electroplating method and apparatus therefor |
| JP2006152415A (en) * | 2004-12-01 | 2006-06-15 | Ebara Corp | Plating apparatus and plating method |
| CN2898063Y (en) * | 2006-03-01 | 2007-05-09 | 长沙力元新材料股份有限公司 | Continuous electroplating apparatus |
| CN2937161Y (en) * | 2006-08-14 | 2007-08-22 | 中国铝业股份有限公司 | Electroplating liquid circulation device for electroplating production |
| CN101054701B (en) * | 2007-02-08 | 2010-12-08 | 上海美维科技有限公司 | Method of increasing electroplating evenness |
| JP5184308B2 (en) * | 2007-12-04 | 2013-04-17 | 株式会社荏原製作所 | Plating apparatus and plating method |
-
2008
- 2008-11-14 JP JP2008292174A patent/JP5184308B2/en active Active
- 2008-12-01 JP JP2008305978A patent/JP5213669B2/en active Active
- 2008-12-03 KR KR20080122015A patent/KR101493380B1/en active Active
- 2008-12-04 CN CN201710733577.7A patent/CN108588800B/en active Active
- 2008-12-04 CN CN201210570167.2A patent/CN103060871B/en active Active
- 2008-12-04 CN CN201710733595.5A patent/CN107604426B/en active Active
- 2008-12-04 TW TW097147071A patent/TWI457471B/en active
- 2008-12-04 CN CN201510813398.5A patent/CN105420778A/en active Pending
- 2008-12-04 CN CN2008101788929A patent/CN101451264B/en active Active
-
2013
- 2013-01-15 JP JP2013004854A patent/JP5726921B2/en active Active
- 2013-01-15 JP JP2013004855A patent/JP5572229B2/en active Active
-
2014
- 2014-09-24 KR KR1020140127522A patent/KR101515120B1/en active Active
- 2014-09-24 KR KR20140127518A patent/KR101486441B1/en active Active
-
2015
- 2015-04-01 JP JP2015075016A patent/JP5980983B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5516412A (en) * | 1995-05-16 | 1996-05-14 | International Business Machines Corporation | Vertical paddle plating cell |
| US20040007467A1 (en) * | 2002-05-29 | 2004-01-15 | Mchugh Paul R. | Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces |
| US20040262150A1 (en) * | 2002-07-18 | 2004-12-30 | Toshikazu Yajima | Plating device |
| US20060131162A1 (en) * | 2003-03-24 | 2006-06-22 | Alexander Schroeck | Device and the parts thereof for producing electrodeposited dental shaped pieces |
| US20050006241A1 (en) * | 2003-07-01 | 2005-01-13 | Mchugh Paul R. | Paddles and enclosures for enhancing mass transfer during processing of microfeature workpieces |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI668335B (en) * | 2018-08-22 | 2019-08-11 | 華紹國際有限公司 | Plating device and plating method |
| TWI707988B (en) * | 2018-10-30 | 2020-10-21 | 台灣積體電路製造股份有限公司 | Plating apparatus and plating method |
| US10865496B2 (en) | 2018-10-30 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plating apparatus and plating method |
| TWI739615B (en) * | 2018-10-30 | 2021-09-11 | 台灣積體電路製造股份有限公司 | Plating apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5726921B2 (en) | 2015-06-03 |
| KR20090058466A (en) | 2009-06-09 |
| CN101451264A (en) | 2009-06-10 |
| JP5213669B2 (en) | 2013-06-19 |
| JP2013122091A (en) | 2013-06-20 |
| CN101451264B (en) | 2013-01-23 |
| TW200936818A (en) | 2009-09-01 |
| JP2015145537A (en) | 2015-08-13 |
| JP2013064202A (en) | 2013-04-11 |
| CN108588800B (en) | 2020-07-07 |
| JP2009155726A (en) | 2009-07-16 |
| KR20140130645A (en) | 2014-11-11 |
| KR101486441B1 (en) | 2015-01-28 |
| JP5572229B2 (en) | 2014-08-13 |
| KR101493380B1 (en) | 2015-02-23 |
| KR101515120B1 (en) | 2015-04-24 |
| JP5184308B2 (en) | 2013-04-17 |
| JP2009155727A (en) | 2009-07-16 |
| KR20140133788A (en) | 2014-11-20 |
| CN105420778A (en) | 2016-03-23 |
| CN108588800A (en) | 2018-09-28 |
| CN103060871A (en) | 2013-04-24 |
| CN107604426B (en) | 2019-08-30 |
| CN103060871B (en) | 2015-11-25 |
| CN107604426A (en) | 2018-01-19 |
| JP5980983B2 (en) | 2016-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI457471B (en) | Plating device and plating method | |
| USRE45687E1 (en) | Plating apparatus and plating method | |
| JP6100049B2 (en) | Plating equipment | |
| US10829865B2 (en) | Paddle for use of stirring plating solution and plating apparatus including paddle | |
| CN110184639B (en) | Electroplating device | |
| JP4642771B2 (en) | Method and apparatus for fluid processing a workpiece | |
| JP2009155727A5 (en) | Plating equipment | |
| TWI748131B (en) | Plating apparatus and plating method | |
| EP1524338A1 (en) | Plating device | |
| US20210071312A1 (en) | Plating method, plating apparatus, anode holder | |
| TWI743872B (en) | Electrochemical deposition systems | |
| CN203474939U (en) | Electroplating device | |
| KR20190041400A (en) | Plating apparatus and plating method | |
| KR20220098847A (en) | Paddle and plating apparatus equipped with the paddle |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |