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TW200703486A - An optical system with at least a semiconductor light source and a method for removing contaminations and/or heating the system - Google Patents

An optical system with at least a semiconductor light source and a method for removing contaminations and/or heating the system

Info

Publication number
TW200703486A
TW200703486A TW095124222A TW95124222A TW200703486A TW 200703486 A TW200703486 A TW 200703486A TW 095124222 A TW095124222 A TW 095124222A TW 95124222 A TW95124222 A TW 95124222A TW 200703486 A TW200703486 A TW 200703486A
Authority
TW
Taiwan
Prior art keywords
light source
semiconductor light
heating
optical system
contaminations
Prior art date
Application number
TW095124222A
Other languages
English (en)
Inventor
Dieter Bader
Original Assignee
Zeiss Carl Smt Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Ag filed Critical Zeiss Carl Smt Ag
Publication of TW200703486A publication Critical patent/TW200703486A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning In General (AREA)
TW095124222A 2005-07-07 2006-07-03 An optical system with at least a semiconductor light source and a method for removing contaminations and/or heating the system TW200703486A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005031792A DE102005031792A1 (de) 2005-07-07 2005-07-07 Verfahren zur Entfernung von Kontamination von optischen Elementen, insbesondere von Oberflächen optischer Elemente sowie ein optisches System oder Teilsystem hierfür

Publications (1)

Publication Number Publication Date
TW200703486A true TW200703486A (en) 2007-01-16

Family

ID=37023114

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095124222A TW200703486A (en) 2005-07-07 2006-07-03 An optical system with at least a semiconductor light source and a method for removing contaminations and/or heating the system

Country Status (4)

Country Link
US (1) US20080212045A1 (zh)
DE (1) DE102005031792A1 (zh)
TW (1) TW200703486A (zh)
WO (1) WO2007006447A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI695237B (zh) * 2015-06-17 2020-06-01 德商維斯塔電子束公司 微粒射束設備及操作微粒射束設備的方法

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US7385670B2 (en) 2004-10-05 2008-06-10 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7671347B2 (en) * 2006-10-10 2010-03-02 Asml Netherlands B.V. Cleaning method, apparatus and cleaning system
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US9013672B2 (en) 2007-05-04 2015-04-21 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US9019466B2 (en) 2007-07-24 2015-04-28 Asml Netherlands B.V. Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system
US7916269B2 (en) 2007-07-24 2011-03-29 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
NL1035942A1 (nl) 2007-09-27 2009-03-30 Asml Netherlands Bv Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus.
SG151198A1 (en) 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
DE102007051459A1 (de) 2007-10-27 2009-05-14 Asml Netherlands B.V. Reinigung eines optischen Systems mittels Strahlungsenergie
NL1036273A1 (nl) 2007-12-18 2009-06-19 Asml Netherlands Bv Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus.
NL1036306A1 (nl) 2007-12-20 2009-06-23 Asml Netherlands Bv Lithographic apparatus and in-line cleaning apparatus.
US8339572B2 (en) 2008-01-25 2012-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102008041827A1 (de) 2008-09-05 2010-03-18 Carl Zeiss Smt Ag Schutzmodul für EUV-Lithographievorrichtung sowie EUV-Lithographievorrichtung
US20100192973A1 (en) * 2009-01-19 2010-08-05 Yoshifumi Ueno Extreme ultraviolet light source apparatus and cleaning method
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
JP2011023712A (ja) 2009-06-19 2011-02-03 Gigaphoton Inc 極端紫外光源装置
DE102009033319B4 (de) 2009-07-15 2019-02-21 Carl Zeiss Microscopy Gmbh Partikelstrahl-Mikroskopiesystem und Verfahren zum Betreiben desselben
DE102011004375B3 (de) * 2011-02-18 2012-05-31 Carl Zeiss Smt Gmbh Vorrichtung zur Führung von elektromagnetischer Strahlung in eine Projektionsbelichtungsanlage
DE102012216284A1 (de) * 2011-09-27 2013-03-28 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
JP2014053416A (ja) * 2012-09-06 2014-03-20 Toshiba Corp Ｅｕｖ露光装置及びクリーニング方法
WO2014139543A1 (en) * 2013-03-13 2014-09-18 Carl Zeiss Smt Gmbh Microlithographic apparatus
US10180248B2 (en) 2015-09-02 2019-01-15 ProPhotonix Limited LED lamp with sensing capabilities
US11392041B2 (en) * 2020-09-28 2022-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Particle removal device and method
US11579539B2 (en) * 2021-03-03 2023-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for improving critical dimension variation

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US5995263A (en) * 1993-11-12 1999-11-30 Nikon Corporation Projection exposure apparatus
JP3368091B2 (ja) * 1994-04-22 2003-01-20 キヤノン株式会社 投影露光装置及びデバイスの製造方法
US6018384A (en) * 1994-09-07 2000-01-25 Nikon Corporation Projection exposure system
US5883704A (en) * 1995-08-07 1999-03-16 Nikon Corporation Projection exposure apparatus wherein focusing of the apparatus is changed by controlling the temperature of a lens element of the projection optical system
US6233039B1 (en) * 1997-06-05 2001-05-15 Texas Instruments Incorporated Optical illumination system and associated exposure apparatus
EP0980581A1 (en) * 1998-03-05 2000-02-23 Fed Corporation Blue and ultraviolet photolithography with organic light emitting devices
DE19830438A1 (de) * 1998-07-08 2000-01-13 Zeiss Carl Fa Verfahren zur Dekontamination von Mikrolithographie-Projektionsbelichtungsanlagen
US6256086B1 (en) * 1998-10-06 2001-07-03 Canon Kabushiki Kaisha Projection exposure apparatus, and device manufacturing method
DE10000191B8 (de) * 2000-01-05 2005-10-06 Carl Zeiss Smt Ag Projektbelichtungsanlage der Mikrolithographie
US20020126479A1 (en) * 2001-03-08 2002-09-12 Ball Semiconductor, Inc. High power incoherent light source with laser array
US6828569B2 (en) * 2001-11-19 2004-12-07 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method and device manufactured thereby
DE10211611A1 (de) * 2002-03-12 2003-09-25 Zeiss Carl Smt Ag Verfahren und Vorrichtung zur Dekontamination optischer Oberflächen
AU2003235489A1 (en) * 2002-05-08 2003-11-11 Tom Mcneil High efficiency solid-state light source and methods of use and manufacture
DE10230652A1 (de) * 2002-07-08 2004-01-29 Carl Zeiss Smt Ag Optische Vorrichtung mit einer Beleuchtungslichtquelle
DE10240002A1 (de) * 2002-08-27 2004-03-11 Carl Zeiss Semiconductor Manufacturing Technologies Ag Optisches Teilsystem insbesondere für eine Projektionsbelichtungsanlage mit mindestens einem in mindestens zwei Stellungen verbringbaren optischen Element
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI695237B (zh) * 2015-06-17 2020-06-01 德商維斯塔電子束公司 微粒射束設備及操作微粒射束設備的方法
US10814361B2 (en) 2015-06-17 2020-10-27 Vistec Electron Beam Gmbh Particle beam apparatus and method for operating a particle beam apparatus

Also Published As

Publication number Publication date
DE102005031792A1 (de) 2007-01-11
WO2007006447A1 (en) 2007-01-18
US20080212045A1 (en) 2008-09-04

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