[go: up one dir, main page]

DE10000191B8 - Projektbelichtungsanlage der Mikrolithographie - Google Patents

Projektbelichtungsanlage der Mikrolithographie Download PDF

Info

Publication number
DE10000191B8
DE10000191B8 DE10000191A DE10000191A DE10000191B8 DE 10000191 B8 DE10000191 B8 DE 10000191B8 DE 10000191 A DE10000191 A DE 10000191A DE 10000191 A DE10000191 A DE 10000191A DE 10000191 B8 DE10000191 B8 DE 10000191B8
Authority
DE
Germany
Prior art keywords
microlithography
exposure system
project exposure
project
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10000191A
Other languages
English (en)
Other versions
DE10000191A1 (de
DE10000191B4 (de
Inventor
Karl-Heinz Schuster
Hubert Holderer
Rudolf von Bünau
Christian Dr. Wagner
Jochen Becker
Stefan Xalter
Wolfgang Hummel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to DE10000191A priority Critical patent/DE10000191B8/de
Priority to JP2000376898A priority patent/JP4612945B2/ja
Priority to TW089122846A priority patent/TW486610B/zh
Priority to US09/755,423 priority patent/US6504597B2/en
Publication of DE10000191A1 publication Critical patent/DE10000191A1/de
Application granted granted Critical
Publication of DE10000191B4 publication Critical patent/DE10000191B4/de
Publication of DE10000191B8 publication Critical patent/DE10000191B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/028—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Couplings Of Light Guides (AREA)
DE10000191A 2000-01-05 2000-01-05 Projektbelichtungsanlage der Mikrolithographie Expired - Fee Related DE10000191B8 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE10000191A DE10000191B8 (de) 2000-01-05 2000-01-05 Projektbelichtungsanlage der Mikrolithographie
JP2000376898A JP4612945B2 (ja) 2000-01-05 2000-12-12 光学装置
TW089122846A TW486610B (en) 2000-01-05 2000-12-18 Optical arrangement
US09/755,423 US6504597B2 (en) 2000-01-05 2001-01-05 Optical arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10000191A DE10000191B8 (de) 2000-01-05 2000-01-05 Projektbelichtungsanlage der Mikrolithographie

Publications (3)

Publication Number Publication Date
DE10000191A1 DE10000191A1 (de) 2001-07-26
DE10000191B4 DE10000191B4 (de) 2004-11-18
DE10000191B8 true DE10000191B8 (de) 2005-10-06

Family

ID=7626782

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10000191A Expired - Fee Related DE10000191B8 (de) 2000-01-05 2000-01-05 Projektbelichtungsanlage der Mikrolithographie

Country Status (4)

Country Link
US (1) US6504597B2 (de)
JP (1) JP4612945B2 (de)
DE (1) DE10000191B8 (de)
TW (1) TW486610B (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3944008B2 (ja) * 2002-06-28 2007-07-11 キヤノン株式会社 反射ミラー装置及び露光装置及びデバイス製造方法
TW200423224A (en) * 2002-12-03 2004-11-01 Nippon Kogaku Kk Exposure system, exposure method, and device fabricating method
DE10301799B4 (de) * 2003-01-20 2005-08-11 Carl Zeiss Smt Ag Projektionsbelichtungsanlage und Verfahren zur Homogenisierung optischer Eigenschaften einer optischen Komponente
JPWO2005022614A1 (ja) 2003-08-28 2007-11-01 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP4666908B2 (ja) * 2003-12-12 2011-04-06 キヤノン株式会社 露光装置、計測方法及びデバイス製造方法
WO2005078774A1 (ja) * 2004-02-13 2005-08-25 Nikon Corporation 露光方法及び装置、並びにデバイス製造方法
US20080204682A1 (en) * 2005-06-28 2008-08-28 Nikon Corporation Exposure method and exposure apparatus, and device manufacturing method
DE102005031792A1 (de) * 2005-07-07 2007-01-11 Carl Zeiss Smt Ag Verfahren zur Entfernung von Kontamination von optischen Elementen, insbesondere von Oberflächen optischer Elemente sowie ein optisches System oder Teilsystem hierfür
CN101479667B (zh) 2006-07-03 2011-12-07 卡尔蔡司Smt有限责任公司 修正/修复光刻投影物镜的方法
DE102006039895A1 (de) 2006-08-25 2008-03-13 Carl Zeiss Smt Ag Verfahren zur Korrektur von durch Intensitätsverteilungen in optischen Systemen erzeugten Abbildungsveränderungen sowie entsprechendes optisches System
US7903234B2 (en) * 2006-11-27 2011-03-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
KR101507622B1 (ko) 2006-12-01 2015-03-31 칼 짜이스 에스엠티 게엠베하 이미지 수차들을 감소시키기 위한, 교환가능하고 조작가능한 보정 배열을 구비하는 광학 시스템
CN101589342A (zh) 2007-01-22 2009-11-25 卡尔蔡司Smt股份公司 改善光学系统成像特性的方法以及光学系统
DE102007009867A1 (de) * 2007-02-28 2008-09-11 Carl Zeiss Smt Ag Abbildungsvorrichtung mit auswechselbaren Blenden sowie Verfahren hierzu
US7829249B2 (en) 2007-03-05 2010-11-09 Asml Netherlands B.V. Device manufacturing method, computer program and lithographic apparatus
WO2008116886A1 (de) 2007-03-27 2008-10-02 Carl Zeiss Smt Ag Korrektur optischer elemente mittels flach eingestrahltem korrekturlicht
WO2008133234A1 (ja) * 2007-04-23 2008-11-06 Nikon Corporation 光学素子保持装置、鏡筒及び露光装置ならびにデバイスの製造方法
US7692766B2 (en) * 2007-05-04 2010-04-06 Asml Holding Nv Lithographic apparatus
US20080285000A1 (en) * 2007-05-17 2008-11-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2048540A1 (de) 2007-10-09 2009-04-15 Carl Zeiss SMT AG Mikrolithographisches Projektionsbelichtungsgerät
US20100290020A1 (en) * 2009-05-15 2010-11-18 Shinichi Mori Optical apparatus, exposure apparatus, exposure method, and method for producing device
NL2005449A (en) * 2009-11-16 2012-04-05 Asml Netherlands Bv Lithographic method and apparatus.
WO2011116792A1 (en) 2010-03-26 2011-09-29 Carl Zeiss Smt Gmbh Optical system, exposure apparatus, and waverfront correction method
WO2012013748A1 (en) 2010-07-30 2012-02-02 Carl Zeiss Smt Gmbh Euv exposure apparatus
DE102010039930A1 (de) * 2010-08-30 2012-03-01 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage
DE102010041298A1 (de) 2010-09-24 2012-03-29 Carl Zeiss Smt Gmbh EUV-Mikrolithographie-Projektionsbelichtungsanlage mit einer Heizlichtquelle
NL2007498A (en) * 2010-12-23 2012-06-27 Asml Netherlands Bv Lithographic apparatus and method of modifying a beam of radiation within a lithographic apparatus.
DE102011004375B3 (de) 2011-02-18 2012-05-31 Carl Zeiss Smt Gmbh Vorrichtung zur Führung von elektromagnetischer Strahlung in eine Projektionsbelichtungsanlage
DE102011076435B4 (de) * 2011-05-25 2013-09-19 Carl Zeiss Smt Gmbh Verfahren sowie Vorrichtung zur Einstellung einer Beleuchtungsoptik
DE102011077784A1 (de) * 2011-06-20 2012-12-20 Carl Zeiss Smt Gmbh Projektionsanordnung
KR101693950B1 (ko) 2011-09-29 2017-01-06 칼 짜이스 에스엠테 게엠베하 마이크로리소그래피 투영 노광 장치의 투영 대물 렌즈
DE102012201410B4 (de) 2012-02-01 2013-08-14 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit einer Messvorrichtung zum Vermessen eines optischen Elements
US9940427B2 (en) 2012-02-09 2018-04-10 Asml Netherlands B.V. Lens heating aware source mask optimization for advanced lithography
WO2013156041A1 (en) * 2012-04-18 2013-10-24 Carl Zeiss Smt Gmbh A microlithographic apparatus and a method of changing an optical wavefront in an objective of such an apparatus
DE102012212757A1 (de) 2012-07-20 2014-01-23 Carl Zeiss Smt Gmbh Verfahren zum betreiben einer mikrolithographischen projektionsbelichtungsanlage
NL2011592A (en) 2012-10-31 2014-05-06 Asml Netherlands Bv Compensation for patterning device deformation.
WO2014139543A1 (en) 2013-03-13 2014-09-18 Carl Zeiss Smt Gmbh Microlithographic apparatus
DE102013205567A1 (de) * 2013-03-28 2014-03-06 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage mit einem variablen Transmissionsfilter
WO2015032418A1 (en) 2013-09-09 2015-03-12 Carl Zeiss Smt Gmbh Microlithographic projection exposure apparatus and method of correcting optical wavefront deformations in such an apparatus
WO2015036002A1 (en) 2013-09-14 2015-03-19 Carl Zeiss Smt Gmbh Method of operating a microlithographic projection apparatus
DE102015212785B4 (de) * 2015-07-08 2020-06-18 Heraeus Noblelight Gmbh Optimierung der Strahlenverteilung einer Strahlungsquelle
DE102016214480A1 (de) * 2016-08-04 2017-08-24 Carl Zeiss Smt Gmbh Optische anordnung für eine lithographieanlage und verfahren zum betreiben einer lithographieanlage
DE102016225701A1 (de) 2016-12-21 2017-03-02 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer EUV-Lithographieanlage
CN109426088B (zh) * 2017-08-25 2021-03-09 上海微电子装备（集团）股份有限公司 一种照明系统、曝光装置和曝光方法
US11474439B2 (en) * 2019-06-25 2022-10-18 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and method of manufacturing article
DE102022209455A1 (de) * 2022-09-09 2024-03-14 Carl Zeiss Smt Gmbh Heizanordnung, sowie optisches System und Verfahren zum Heizen eines optischen Elements
DE102023202021A1 (de) * 2023-03-07 2024-09-12 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Heizen eines Spiegels, Anordnung aus einer Heizvorrichtung und einem EUV-Spiegel, Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage
DE102024203755A1 (de) 2023-07-27 2025-01-30 Carl Zeiss Smt Gmbh Verfahren zum Designen eines abbildenden optischen Systems für eine Projektionsbelichtungsanlage, abbildendes optisches System und Projektionsbelichtungsanlage
DE102023209078A1 (de) 2023-09-19 2024-08-22 Carl Zeiss Smt Gmbh Verfahren zum Betreiben eines EUV-Spiegelsystems, EUV-Spiegelsystem, Projektionsobjektiv für eine mikrolithografische Projektionsbelichtungsanlage

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864548A (ja) * 1994-08-25 1996-03-08 Kokusai Electric Co Ltd ウェーハのランプアニール方法及び装置
EP0823662A2 (de) * 1996-08-07 1998-02-11 Nikon Corporation Projektionsbelichtungsapparat
US5805273A (en) * 1994-04-22 1998-09-08 Canon Kabushiki Kaisha Projection exposure apparatus and microdevice manufacturing method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719704A (en) * 1991-09-11 1998-02-17 Nikon Corporation Projection exposure apparatus
US5995263A (en) * 1993-11-12 1999-11-30 Nikon Corporation Projection exposure apparatus
US6018384A (en) * 1994-09-07 2000-01-25 Nikon Corporation Projection exposure system
US5883704A (en) 1995-08-07 1999-03-16 Nikon Corporation Projection exposure apparatus wherein focusing of the apparatus is changed by controlling the temperature of a lens element of the projection optical system
JPH09232213A (ja) * 1996-02-26 1997-09-05 Nikon Corp 投影露光装置
JP3790833B2 (ja) * 1996-08-07 2006-06-28 株式会社ニコン 投影露光方法及び装置
US6256086B1 (en) * 1998-10-06 2001-07-03 Canon Kabushiki Kaisha Projection exposure apparatus, and device manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5805273A (en) * 1994-04-22 1998-09-08 Canon Kabushiki Kaisha Projection exposure apparatus and microdevice manufacturing method
JPH0864548A (ja) * 1994-08-25 1996-03-08 Kokusai Electric Co Ltd ウェーハのランプアニール方法及び装置
EP0823662A2 (de) * 1996-08-07 1998-02-11 Nikon Corporation Projektionsbelichtungsapparat

Also Published As

Publication number Publication date
DE10000191A1 (de) 2001-07-26
TW486610B (en) 2002-05-11
JP2001196305A (ja) 2001-07-19
JP4612945B2 (ja) 2011-01-12
DE10000191B4 (de) 2004-11-18
US6504597B2 (en) 2003-01-07
US20010019403A1 (en) 2001-09-06

Similar Documents

Publication Publication Date Title
DE10000191B8 (de) Projektbelichtungsanlage der Mikrolithographie
DE59913282D1 (de) Projektions-belichtungsanlage der mikrolithographie
DE60118669D1 (de) Lithographischer Projektionsapparat
DE60127050D1 (de) Lithographischer Projektionsapparat
DE60020638D1 (de) Lithographischer Projektionsapparat
DE60020620D1 (de) Lithographischer Projektionsapparat
DE60026461D1 (de) Lithographischer Projektionsapparat
DE60135260D1 (de) Belichtungsgerät
DE60143178D1 (de) Lichtempfindliche Zusammensetzung
DE50112921D1 (de) Projektionsbelichtungsanlage mit reflektivem Retikel
DE60134922D1 (de) Lithographischer Apparat
DE50211190D1 (de) Projektionsbelichtungsanlage
DE60232568D1 (de) Belichtungsapparat
DE60041232D1 (de) Projektionssystem
DE60233406D1 (de) Fotoresist-entfernungszusammensetzung
DE60128975D1 (de) Mikrolithographischer Projektionsapparat
DE60113887T2 (de) Projektor
DE59707065D1 (de) Lithographie-belichtungseinrichtung
DE60007538D1 (de) Bildprojektionssystem
DE60131203D1 (de) Lithographischer Apparat
DE60221180D1 (de) Lithographischer Apparat
DE69933918D1 (de) Lithographischer Projektionsapparat
ID29506A (id) Masker sekali pakai
DE69819306D1 (de) Flüssigkeitsundurchlässige Gesichtsmaske
DE60122229D1 (de) Trennfilm

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: CARL ZEISS SMT AG, 73447 OBERKOCHEN, DE

8364 No opposition during term of opposition
8381 Inventor (new situation)

Inventor name: HUMMEL, WOLFGANG, 73525 SCHWAEBISCH GMUEND, DE

Inventor name: B?NAU, RUDOLF, VON, 73457 ESSINGEN, DE

Inventor name: HOLDERER, HUBERT, 89551 KOENIGSBRONN, DE

Inventor name: SCHUSTER, KARL-HEINZ, 89551 KOENIGSBRONN, DE

Inventor name: XALTER, STEFAN, 73447 OBERKOCHEN, DE

Inventor name: WAGNER, CHRISTIAN, DR., 73430 AALEN, DE

Inventor name: BECKER, JOCHEN, 73447 OBERKOCHEN, DE

8396 Reprint of erroneous front page
8327 Change in the person/name/address of the patent owner

Owner name: CARL ZEISS SMT GMBH, 73447 OBERKOCHEN, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee