[go: up one dir, main page]

TW200603208A - Semiconductor device with crack prevention ring and method of manufacture thereof - Google Patents

Semiconductor device with crack prevention ring and method of manufacture thereof

Info

Publication number
TW200603208A
TW200603208A TW093139000A TW93139000A TW200603208A TW 200603208 A TW200603208 A TW 200603208A TW 093139000 A TW093139000 A TW 093139000A TW 93139000 A TW93139000 A TW 93139000A TW 200603208 A TW200603208 A TW 200603208A
Authority
TW
Taiwan
Prior art keywords
crack prevention
prevention ring
integrated circuit
crack
ring
Prior art date
Application number
TW093139000A
Other languages
English (en)
Other versions
TWI262537B (en
Inventor
Ping-Wei Wang
Chiiming-Morris Wu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200603208A publication Critical patent/TW200603208A/zh
Application granted granted Critical
Publication of TWI262537B publication Critical patent/TWI262537B/zh

Links

Classifications

    • H10W42/121
    • H10W42/00
    • H10W42/60

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093139000A 2004-07-15 2004-12-15 Semiconductor device with crack prevention ring and method of manufacture thereof TWI262537B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/891,955 US7223673B2 (en) 2004-07-15 2004-07-15 Method of manufacturing semiconductor device with crack prevention ring

Publications (2)

Publication Number Publication Date
TW200603208A true TW200603208A (en) 2006-01-16
TWI262537B TWI262537B (en) 2006-09-21

Family

ID=35598589

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093139000A TWI262537B (en) 2004-07-15 2004-12-15 Semiconductor device with crack prevention ring and method of manufacture thereof

Country Status (4)

Country Link
US (3) US7223673B2 (zh)
CN (1) CN1734764A (zh)
SG (1) SG119257A1 (zh)
TW (1) TWI262537B (zh)

Families Citing this family (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI227936B (en) * 2004-01-14 2005-02-11 Taiwan Semiconductor Mfg Sealed ring for IC protection
US8072066B2 (en) * 2004-06-04 2011-12-06 Omnivision Technologies, Inc. Metal interconnects for integrated circuit die comprising non-oxidizing portions extending outside seal ring
US7777338B2 (en) * 2004-09-13 2010-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structure for integrated circuit chips
JP4689244B2 (ja) * 2004-11-16 2011-05-25 ルネサスエレクトロニクス株式会社 半導体装置
US7374971B2 (en) 2005-04-20 2008-05-20 Freescale Semiconductor, Inc. Semiconductor die edge reconditioning
JP2006339189A (ja) * 2005-05-31 2006-12-14 Oki Electric Ind Co Ltd 半導体ウェハおよびそれにより形成した半導体装置
US20060278957A1 (en) * 2005-06-09 2006-12-14 Zong-Huei Lin Fabrication of semiconductor integrated circuit chips
US7176555B1 (en) * 2005-07-26 2007-02-13 United Microelectronics Corp. Flip chip package with reduced thermal stress
US8624346B2 (en) 2005-10-11 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Exclusion zone for stress-sensitive circuit design
US20070102791A1 (en) * 2005-11-07 2007-05-10 Ping-Chang Wu Structure of multi-layer crack stop ring and wafer having the same
US20070102792A1 (en) * 2005-11-07 2007-05-10 Ping-Chang Wu Multi-layer crack stop structure
US7382038B2 (en) * 2006-03-22 2008-06-03 United Microelectronics Corp. Semiconductor wafer and method for making the same
JP2008028243A (ja) * 2006-07-24 2008-02-07 Toshiba Corp 半導体装置
US20080122038A1 (en) * 2006-09-15 2008-05-29 Toshiba America Electronic Components, Inc. Guard ring structure with metallic materials
KR100771378B1 (ko) * 2006-12-22 2007-10-30 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
US7692274B2 (en) * 2007-01-04 2010-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Reinforced semiconductor structures
US9601443B2 (en) * 2007-02-13 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Test structure for seal ring quality monitor
KR100995558B1 (ko) 2007-03-22 2010-11-22 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법
WO2008126268A1 (ja) 2007-03-30 2008-10-23 Fujitsu Microelectronics Limited 半導体装置
US7952167B2 (en) * 2007-04-27 2011-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Scribe line layout design
US8125052B2 (en) * 2007-05-14 2012-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structure with improved cracking protection
US20080290340A1 (en) * 2007-05-23 2008-11-27 Texas Instruments Incorporated Method for fabricating a semiconductor device having embedded interconnect structures to improve die corner robustness
US7622737B2 (en) * 2007-07-11 2009-11-24 International Business Machines Corporation Test structures for electrically detecting back end of the line failures and methods of making and using the same
US9620456B2 (en) * 2007-07-12 2017-04-11 Nxp B.V. Integrated circuits on a wafer and methods for manufacturing integrated circuits
US7732932B2 (en) * 2007-08-03 2010-06-08 International Business Machines Corporation Semiconductor chips with crack stop regions for reducing crack propagation from chip edges/corners
US7960814B2 (en) 2007-08-08 2011-06-14 Freescale Semiconductor, Inc. Stress relief of a semiconductor device
US8102027B2 (en) * 2007-08-21 2012-01-24 Broadcom Corporation IC package sacrificial structures for crack propagation confinement
KR101369361B1 (ko) 2007-10-15 2014-03-04 삼성전자주식회사 일체형 크랙 스탑 구조물을 구비한 반도체 장치
US8643147B2 (en) * 2007-11-01 2014-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Seal ring structure with improved cracking protection and reduced problems
KR20090046993A (ko) * 2007-11-07 2009-05-12 주식회사 동부하이텍 반도체 소자 및 그 제조 방법
JP2009123734A (ja) * 2007-11-12 2009-06-04 Renesas Technology Corp 半導体装置及びその製造方法
US8648444B2 (en) * 2007-11-29 2014-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer scribe line structure for improving IC reliability
US7491578B1 (en) 2008-04-02 2009-02-17 International Business Machines Corporation Method of forming crack trapping and arrest in thin film structures
JP2009266923A (ja) * 2008-04-23 2009-11-12 Seiko Epson Corp 半導体装置およびその製造方法
US8334582B2 (en) * 2008-06-26 2012-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Protective seal ring for preventing die-saw induced stress
US7955952B2 (en) * 2008-07-17 2011-06-07 International Business Machines Corporation Crackstop structures and methods of making same
US7790577B2 (en) * 2008-07-17 2010-09-07 International Business Machines Corporation Crackstop structures and methods of making same
US8373254B2 (en) 2008-07-29 2013-02-12 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for reducing integrated circuit corner peeling
WO2010022970A1 (en) * 2008-08-29 2010-03-04 Advanced Micro Devices, Inc. A semiconductor device including stress relaxation gaps for enhancing chip package interaction stability
DE102008044984A1 (de) * 2008-08-29 2010-07-15 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit Verspannungsrelaxationsspalte zur Verbesserung der Chipgehäusewechselwirkungsstabilität
US8125054B2 (en) * 2008-09-23 2012-02-28 Texas Instruments Incorporated Semiconductor device having enhanced scribe and method for fabrication
KR101470530B1 (ko) * 2008-10-24 2014-12-08 삼성전자주식회사 일체화된 가드 링 패턴과 공정 모니터링 패턴을 포함하는 반도체 웨이퍼 및 반도체 소자
US8013333B2 (en) * 2008-11-07 2011-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor test pad structures
US7906836B2 (en) 2008-11-14 2011-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Heat spreader structures in scribe lines
KR20100064602A (ko) * 2008-12-05 2010-06-15 삼성전자주식회사 미로 같은 크랙 스토퍼 구조물을 갖는 반도체 및 제조 방법
US8368180B2 (en) * 2009-02-18 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Scribe line metal structure
US7897433B2 (en) * 2009-02-18 2011-03-01 Advanced Micro Devices, Inc. Semiconductor chip with reinforcement layer and method of making the same
US8445994B2 (en) * 2009-05-07 2013-05-21 Qualcomm Incorporated Discontinuous thin semiconductor wafer surface features
JP2010287853A (ja) * 2009-06-15 2010-12-24 Elpida Memory Inc 半導体装置及びその製造方法
US20110006389A1 (en) * 2009-07-08 2011-01-13 Lsi Corporation Suppressing fractures in diced integrated circuits
US9059110B2 (en) 2009-09-04 2015-06-16 X-Fab Semiconductor Foundries Ag Reduction of fluorine contamination of bond pads of semiconductor devices
US9269676B2 (en) * 2009-11-25 2016-02-23 Intel Corporation Through silicon via guard ring
TWI417975B (zh) * 2009-12-30 2013-12-01 Raydium Semiconductor Corp 測試墊結構、晶片封裝結構、測試墊結構製作方法以及晶片封裝結構製作方法
JP5830843B2 (ja) 2010-03-24 2015-12-09 富士通セミコンダクター株式会社 半導体ウエハとその製造方法、及び半導体チップ
US9093411B2 (en) 2010-10-19 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Pad structure having contact bars extending into substrate and wafer having the pad structure
US8587089B2 (en) * 2010-11-03 2013-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Seal ring structure with polyimide layer adhesion
FR2973935A1 (fr) * 2011-04-11 2012-10-12 St Microelectronics Rousset Procede pour evaluer un processus de decoupe de wafer semi-conducteur
US8692318B2 (en) * 2011-05-10 2014-04-08 Nanya Technology Corp. Trench MOS structure and method for making the same
US8710630B2 (en) * 2011-07-11 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for marking the orientation of a sawed die
US8587090B2 (en) * 2011-07-29 2013-11-19 Mediatek Inc. Die seal ring structure
US8624348B2 (en) 2011-11-11 2014-01-07 Invensas Corporation Chips with high fracture toughness through a metal ring
US8951842B2 (en) * 2012-01-12 2015-02-10 Micron Technology, Inc. Semiconductor growth substrates and associated systems and methods for die singulation
JP5968711B2 (ja) * 2012-07-25 2016-08-10 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US8987923B2 (en) * 2012-07-31 2015-03-24 Taiwan Semiconductor Manufacturing Company Limited Semiconductor seal ring
US9202782B2 (en) * 2013-01-07 2015-12-01 Intel Corporation Embedded package in PCB build up
US8970008B2 (en) * 2013-03-14 2015-03-03 Infineon Technologies Ag Wafer and integrated circuit chip having a crack stop structure
KR102061697B1 (ko) * 2013-07-05 2020-01-02 삼성전자주식회사 랩핑층을 가진 반도체 소자를 제조하는 방법
US9874690B2 (en) * 2013-10-04 2018-01-23 Globalfoundries Inc. Integrated waveguide structure with perforated chip edge seal
JP6406138B2 (ja) 2014-07-18 2018-10-17 株式会社デンソー 半導体装置およびその製造方法
CN105448866B (zh) * 2014-08-20 2019-08-30 中芯国际集成电路制造(上海)有限公司 半导体器件结构及其制作方法
DE102015100671B4 (de) * 2015-01-19 2022-01-20 Infineon Technologies Ag Bauelement mit einem Halbleiterchip, der eine Dicing-Kante und eine Schutzstruktur umfasst
DE102015203393A1 (de) 2015-02-25 2016-08-25 Infineon Technologies Ag Halbleiterelement und Verfahren zu Herstellen von diesem
CN106898589B (zh) * 2015-12-18 2020-03-17 联华电子股份有限公司 集成电路
US10249506B2 (en) 2016-03-03 2019-04-02 Gan Systems Inc. GaN-on-si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof
US10283501B2 (en) 2016-03-03 2019-05-07 Gan Systems Inc. GaN-on-Si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof
DE102016113020B4 (de) 2016-07-14 2020-10-01 Infineon Technologies Americas Corp. Halbleiterbauelemente und Verfahren zum Bilden eines Halbleiterbauelements
JP2018046094A (ja) * 2016-09-13 2018-03-22 エイブリック株式会社 半導体チップ、半導体装置、半導体ウェハ、及び半導体ウェハのダイシング方法
US10814629B2 (en) 2016-09-19 2020-10-27 Hewlett-Packard Development Company, L.P. Termination ring with gapped metallic layer
CN107093597B (zh) * 2017-04-17 2019-10-11 上海华虹宏力半导体制造有限公司 具有esd保护功能的密封环
CN109309057A (zh) 2017-07-26 2019-02-05 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US11049820B2 (en) * 2018-07-30 2021-06-29 Texas Instruments Incorporated Crack suppression structure for HV isolation component
CN110858578B (zh) 2018-08-23 2021-07-13 联华电子股份有限公司 管芯封环及其制造方法
KR102378837B1 (ko) * 2018-08-24 2022-03-24 삼성전자주식회사 반도체 장치 및 이를 포함하는 반도체 패키지
KR102653165B1 (ko) * 2018-11-22 2024-04-01 삼성전자주식회사 반도체 장치, 반도체 칩 및 반도체 기판의 반도체 기판의 소잉 방법
US11456247B2 (en) * 2019-06-13 2022-09-27 Nanya Technology Corporation Semiconductor device and fabrication method for the same
CN112151439B (zh) * 2019-06-28 2025-05-30 长鑫存储技术有限公司 晶圆及其制作方法、半导体器件
CN110690160A (zh) * 2019-10-16 2020-01-14 上海先方半导体有限公司 一种芯片保护结构及其制造方法
US20210125910A1 (en) * 2019-10-25 2021-04-29 Nanya Technology Corporation Semiconductor structure
CN111480226B (zh) * 2020-03-03 2021-08-27 长江存储科技有限责任公司 在半导体芯片中的保护结构及用于形成其的方法
CN113725167B (zh) 2020-05-25 2023-08-15 联华电子股份有限公司 集成电路元件及其制作方法
US12132011B2 (en) 2020-05-25 2024-10-29 United Microelectronics Corp. Integrated circuit device and fabrication method thereof
US11127700B1 (en) 2020-05-28 2021-09-21 United Microelectronics Corp. Integrated circuit device
US12249545B2 (en) * 2020-05-28 2025-03-11 United Microelectronics Corp. Integrated circuit device
KR102796813B1 (ko) 2020-06-24 2025-04-16 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법
CN112908879B (zh) * 2021-01-22 2022-06-03 长鑫存储技术有限公司 裸片裂纹损伤检测电路、裂纹检测方法以及存储器
KR102906234B1 (ko) * 2021-02-15 2025-12-31 삼성전자주식회사 반도체 장치 및 그의 제조 방법
US12191263B2 (en) 2021-03-01 2025-01-07 Changxin Memory Technologies, Inc. Semiconductor structure and manufacturing method of semiconductor structure
CN113035835B (zh) * 2021-03-01 2022-04-01 长鑫存储技术有限公司 半导体结构及半导体结构制作方法
US11854956B2 (en) * 2021-07-16 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor die package with conductive line crack prevention design
US12300636B2 (en) * 2021-07-29 2025-05-13 Taiwan Semiconductor Manufacturing Company, Ltd Seal ring structure and method of fabricating the same
KR20230031712A (ko) * 2021-08-27 2023-03-07 삼성전자주식회사 크랙 방지 구조를 포함한 반도체 소자
CN113937065B (zh) * 2021-10-12 2025-01-17 长鑫存储技术有限公司 半导体结构及其制备方法
US12278151B2 (en) 2021-12-13 2025-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor wafer seal ring having protrusion extending into trench in semiconductor substrate
US20230230981A1 (en) * 2022-01-18 2023-07-20 Changxin Memory Technologies, Inc, Semiconductor structure and manufacturing method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW325576B (en) * 1996-12-12 1998-01-21 Winbond Electronics Corp The manufacturing methods for die seal
TW311242B (en) * 1996-12-12 1997-07-21 Winbond Electronics Corp Die seal structure with trench and manufacturing method thereof
US6022791A (en) * 1997-10-15 2000-02-08 International Business Machines Corporation Chip crack stop
US6162583A (en) * 1998-03-20 2000-12-19 Industrial Technology Research Institute Method for making intermetal dielectrics (IMD) on semiconductor integrated circuits using low dielectric constant spin-on polymers
US6412786B1 (en) * 1999-11-24 2002-07-02 United Microelectronics Corp. Die seal ring
KR100314133B1 (ko) * 1999-11-26 2001-11-15 윤종용 가장자리에 흡습방지막이 형성된 반도체 칩 및 이흡습방지막의 형성방법
US6951801B2 (en) * 2003-01-27 2005-10-04 Freescale Semiconductor, Inc. Metal reduction in wafer scribe area
JP2005142262A (ja) * 2003-11-05 2005-06-02 Toshiba Corp 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
SG119257A1 (en) 2006-02-28
US7586176B2 (en) 2009-09-08
TWI262537B (en) 2006-09-21
US8354734B2 (en) 2013-01-15
US20090289325A1 (en) 2009-11-26
US20060012012A1 (en) 2006-01-19
CN1734764A (zh) 2006-02-15
US20070194409A1 (en) 2007-08-23
US7223673B2 (en) 2007-05-29

Similar Documents

Publication Publication Date Title
TW200603208A (en) Semiconductor device with crack prevention ring and method of manufacture thereof
US8486803B2 (en) Wafer level packaging method of encapsulating the bottom and side of a semiconductor chip
TWI256095B (en) Wafer level semiconductor package with build-up layer and process for fabricating the same
TW200710980A (en) Method for manufacturing semiconductor device
SG164318A1 (en) Crack stop structure enhancement of the integrated circuit seal ring
WO2002078083A3 (en) In-street integrated circuit wafer via
TW200633149A (en) Semiconductor die package including universal footprint and method for manufacturing the same
WO2007117805A3 (en) Method of separating semiconductor dies
SG165231A1 (en) Semiconductor die and method of forming noise absorbing regions between thvs in peripheral region of the die
DE602007010978D1 (zh)
WO2010080275A3 (en) Bump stress mitigation layer for integrated circuits
TW200605227A (en) Semiconductor device and manufacturing method thereof
TW200625535A (en) Method for manufacturing semiconductor device, and semiconductor device and electronic device
DE602007012367D1 (zh)
TW200634955A (en) Semiconductor device and semiconductor-device manufacturing method
TW200507704A (en) Method of production of multilayer circuit board with built-in semiconductor chip
WO2006115576A3 (en) Semiconductor die edge reconditioning
TW200639952A (en) Surface roughing method for embedded semiconductor chip structure
TW200512925A (en) Semiconductor device having fuse and capacitor at the same level and method of fabricating the same
TWI315551B (en) Semiconductor device production method and semiconductor device
TW200606735A (en) Die attach area cut-on-fly method and apparatus
TW200741863A (en) Method and device for depositing a protective layer during an etching procedure
TW200741896A (en) A semiconductor package assembly and methods of forming the same
TW200616028A (en) Passive device and method for forming the same
SG156550A1 (en) Wafer level integration module with interconnects

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent