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SG42823A1 - Method of manufacturing semiconductor devices - Google Patents

Method of manufacturing semiconductor devices

Info

Publication number
SG42823A1
SG42823A1 SG1995002282A SG1995002282A SG42823A1 SG 42823 A1 SG42823 A1 SG 42823A1 SG 1995002282 A SG1995002282 A SG 1995002282A SG 1995002282 A SG1995002282 A SG 1995002282A SG 42823 A1 SG42823 A1 SG 42823A1
Authority
SG
Singapore
Prior art keywords
semiconductor devices
manufacturing semiconductor
manufacturing
devices
semiconductor
Prior art date
Application number
SG1995002282A
Other languages
English (en)
Inventor
Kazuyuki Yahiro
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of SG42823A1 publication Critical patent/SG42823A1/en

Links

Classifications

    • H10P14/662—
    • H10W20/071—
    • H10W20/074—
    • H10W20/097—
    • H10P14/6334—
    • H10P14/6336—
    • H10P14/6682—
    • H10P14/6686—
    • H10P14/69215—
    • H10P14/6922—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/902—Capping layer
SG1995002282A 1994-12-26 1995-12-22 Method of manufacturing semiconductor devices SG42823A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6322950A JPH08181276A (ja) 1994-12-26 1994-12-26 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG42823A1 true SG42823A1 (en) 1997-10-17

Family

ID=18149458

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1995002282A SG42823A1 (en) 1994-12-26 1995-12-22 Method of manufacturing semiconductor devices

Country Status (8)

Country Link
US (2) US5683940A (zh)
EP (1) EP0720212B1 (zh)
JP (1) JPH08181276A (zh)
KR (1) KR0184378B1 (zh)
CN (1) CN1082721C (zh)
DE (1) DE69522195T2 (zh)
SG (1) SG42823A1 (zh)
TW (1) TW312817B (zh)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08181276A (ja) * 1994-12-26 1996-07-12 Toshiba Corp 半導体装置の製造方法
JP3522917B2 (ja) * 1995-10-03 2004-04-26 株式会社東芝 半導体装置の製造方法および半導体製造装置
EP0820095A3 (en) * 1996-07-19 1999-01-27 Sony Corporation Method of forming an interlayer film
KR100213439B1 (ko) * 1996-10-24 1999-08-02 윤종용 더미 웨이퍼를 사용하지 않는 웨이퍼상에 막형성 방법
JP3123449B2 (ja) * 1996-11-01 2001-01-09 ヤマハ株式会社 多層配線形成法
JPH1126449A (ja) * 1997-06-30 1999-01-29 Sony Corp 絶縁膜の成膜方法
KR100256823B1 (ko) * 1997-06-30 2000-05-15 김영환 반도체소자의 보호막 형성방법
US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6593247B1 (en) * 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6287990B1 (en) 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6627532B1 (en) * 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6667553B2 (en) 1998-05-29 2003-12-23 Dow Corning Corporation H:SiOC coated substrates
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6148761A (en) * 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6800571B2 (en) * 1998-09-29 2004-10-05 Applied Materials Inc. CVD plasma assisted low dielectric constant films
US6399489B1 (en) 1999-11-01 2002-06-04 Applied Materials, Inc. Barrier layer deposition using HDP-CVD
US6451390B1 (en) * 2000-04-06 2002-09-17 Applied Materials, Inc. Deposition of TEOS oxide using pulsed RF plasma
US6531398B1 (en) 2000-10-30 2003-03-11 Applied Materials, Inc. Method of depositing organosillicate layers
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US6486082B1 (en) * 2001-06-18 2002-11-26 Applied Materials, Inc. CVD plasma assisted lower dielectric constant sicoh film
GB0118417D0 (en) * 2001-07-28 2001-09-19 Trikon Holdings Ltd A method of depositing a dielectric film
US6926926B2 (en) * 2001-09-10 2005-08-09 Applied Materials, Inc. Silicon carbide deposited by high density plasma chemical-vapor deposition with bias
US6936309B2 (en) * 2002-04-02 2005-08-30 Applied Materials, Inc. Hardness improvement of silicon carboxy films
US20030194496A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Methods for depositing dielectric material
US20030211244A1 (en) * 2002-04-11 2003-11-13 Applied Materials, Inc. Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric
US20030194495A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Crosslink cyclo-siloxane compound with linear bridging group to form ultra low k dielectric
US6815373B2 (en) * 2002-04-16 2004-11-09 Applied Materials Inc. Use of cyclic siloxanes for hardness improvement of low k dielectric films
KR20030095630A (ko) * 2002-06-12 2003-12-24 삼성전자주식회사 매립 특성이 우수한 실리콘 산화물 형성 방법
US7105460B2 (en) * 2002-07-11 2006-09-12 Applied Materials Nitrogen-free dielectric anti-reflective coating and hardmask
US6927178B2 (en) 2002-07-11 2005-08-09 Applied Materials, Inc. Nitrogen-free dielectric anti-reflective coating and hardmask
US6897163B2 (en) * 2003-01-31 2005-05-24 Applied Materials, Inc. Method for depositing a low dielectric constant film
US20050003659A1 (en) * 2003-07-03 2005-01-06 Tower Semiconductor Ltd. Transparent inter-metal dielectric stack for CMOS image sensors
US7288205B2 (en) 2004-07-09 2007-10-30 Applied Materials, Inc. Hermetic low dielectric constant layer for barrier applications
US20060021703A1 (en) * 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
CN106118636A (zh) * 2016-06-27 2016-11-16 高大元 一种荧光氧化硅纳米颗粒的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5190792A (en) * 1989-09-27 1993-03-02 International Business Machines Corporation High-throughput, low-temperature process for depositing oxides
US5314724A (en) * 1991-01-08 1994-05-24 Fujitsu Limited Process for forming silicon oxide film
ATE187277T1 (de) * 1992-07-04 1999-12-15 Trikon Equip Ltd Behandlungsverfahren für eine halbleiterscheibe.
JPH08181276A (ja) * 1994-12-26 1996-07-12 Toshiba Corp 半導体装置の製造方法
JPH08181210A (ja) * 1994-12-26 1996-07-12 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH08181276A (ja) 1996-07-12
US5683940A (en) 1997-11-04
DE69522195D1 (de) 2001-09-20
TW312817B (zh) 1997-08-11
EP0720212B1 (en) 2001-08-16
DE69522195T2 (de) 2002-04-18
KR0184378B1 (ko) 1999-04-15
EP0720212A2 (en) 1996-07-03
EP0720212A3 (en) 1997-07-02
CN1082721C (zh) 2002-04-10
US6153542A (en) 2000-11-28
CN1134604A (zh) 1996-10-30

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