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GB2313708B - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
GB2313708B
GB2313708B GB9711309A GB9711309A GB2313708B GB 2313708 B GB2313708 B GB 2313708B GB 9711309 A GB9711309 A GB 9711309A GB 9711309 A GB9711309 A GB 9711309A GB 2313708 B GB2313708 B GB 2313708B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
fabricating semiconductor
fabricating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9711309A
Other versions
GB9711309D0 (en
GB2313708A (en
Inventor
Hideaki Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB9711309D0 publication Critical patent/GB9711309D0/en
Publication of GB2313708A publication Critical patent/GB2313708A/en
Application granted granted Critical
Publication of GB2313708B publication Critical patent/GB2313708B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P50/266—
    • H10P14/40—
GB9711309A 1996-05-30 1997-05-30 Method of fabricating semiconductor device Expired - Fee Related GB2313708B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08137225A JP3112832B2 (en) 1996-05-30 1996-05-30 Method for manufacturing semiconductor device

Publications (3)

Publication Number Publication Date
GB9711309D0 GB9711309D0 (en) 1997-07-30
GB2313708A GB2313708A (en) 1997-12-03
GB2313708B true GB2313708B (en) 1998-07-29

Family

ID=15193711

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9711309A Expired - Fee Related GB2313708B (en) 1996-05-30 1997-05-30 Method of fabricating semiconductor device

Country Status (3)

Country Link
JP (1) JP3112832B2 (en)
KR (1) KR100252492B1 (en)
GB (1) GB2313708B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW383427B (en) * 1998-04-03 2000-03-01 United Microelectronics Corp Method for etching tantalum oxide
GB2337361B (en) * 1998-05-06 2000-03-29 United Microelectronics Corp Method of etching tantalum oxide layer
US6177353B1 (en) * 1998-09-15 2001-01-23 Infineon Technologies North America Corp. Metallization etching techniques for reducing post-etch corrosion of metal lines
JP3257533B2 (en) * 1999-01-25 2002-02-18 日本電気株式会社 Wiring formation method using inorganic anti-reflection film
JP3733021B2 (en) * 2000-12-15 2006-01-11 シャープ株式会社 Plasma process method
JP4546667B2 (en) * 2001-05-17 2010-09-15 東京エレクトロン株式会社 Dry etching method
KR100453956B1 (en) * 2001-12-20 2004-10-20 동부전자 주식회사 Method for manufacturing metal line of semiconductor device
DE102004022402B4 (en) * 2004-05-06 2007-03-15 Infineon Technologies Ag Process for the anisotropic etching of aluminum-containing substrates
JP5237306B2 (en) * 2010-01-07 2013-07-17 日本電信電話株式会社 Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit device
WO2021171458A1 (en) * 2020-02-27 2021-09-02 株式会社日立ハイテク Plasma processing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350488A (en) * 1992-12-10 1994-09-27 Applied Materials, Inc. Process for etching high copper content aluminum films
US5411631A (en) * 1992-11-11 1995-05-02 Tokyo Electron Limited Dry etching method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5217570A (en) * 1991-01-31 1993-06-08 Sony Corporation Dry etching method
JPH06104222A (en) * 1992-09-18 1994-04-15 Fujitsu Ltd Method for manufacturing semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411631A (en) * 1992-11-11 1995-05-02 Tokyo Electron Limited Dry etching method
US5350488A (en) * 1992-12-10 1994-09-27 Applied Materials, Inc. Process for etching high copper content aluminum films

Also Published As

Publication number Publication date
GB9711309D0 (en) 1997-07-30
JP3112832B2 (en) 2000-11-27
JPH09321026A (en) 1997-12-12
GB2313708A (en) 1997-12-03
KR970077353A (en) 1997-12-12
KR100252492B1 (en) 2000-05-01

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee