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SE0500865L - Halvledaranordning av kiselkarbid - Google Patents

Halvledaranordning av kiselkarbid

Info

Publication number
SE0500865L
SE0500865L SE0500865A SE0500865A SE0500865L SE 0500865 L SE0500865 L SE 0500865L SE 0500865 A SE0500865 A SE 0500865A SE 0500865 A SE0500865 A SE 0500865A SE 0500865 L SE0500865 L SE 0500865L
Authority
SE
Sweden
Prior art keywords
disposed
drift layer
semiconductor device
silicon carbide
carbide semiconductor
Prior art date
Application number
SE0500865A
Other languages
English (en)
Other versions
SE527922C2 (sv
Inventor
Eiichi Okuno
Hideo Matsuki
Jun Kojima
Takeshi Endo
Yoshihito Mitsuoka
Yoshiyuki Hisada
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004122796A external-priority patent/JP4635470B2/ja
Priority claimed from JP2004185521A external-priority patent/JP2006013005A/ja
Application filed by Denso Corp filed Critical Denso Corp
Publication of SE0500865L publication Critical patent/SE0500865L/sv
Publication of SE527922C2 publication Critical patent/SE527922C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H01L29/045—
    • H01L29/78—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H10P90/129—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
SE0500865A 2004-04-19 2005-04-19 Halvledaranordning av kiselkarbid SE527922C2 (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004122796A JP4635470B2 (ja) 2004-04-19 2004-04-19 炭化珪素半導体装置およびその製造方法
JP2004185521A JP2006013005A (ja) 2004-06-23 2004-06-23 炭化珪素半導体基板およびその製造方法

Publications (2)

Publication Number Publication Date
SE0500865L true SE0500865L (sv) 2005-10-20
SE527922C2 SE527922C2 (sv) 2006-07-11

Family

ID=35095381

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0500865A SE527922C2 (sv) 2004-04-19 2005-04-19 Halvledaranordning av kiselkarbid

Country Status (3)

Country Link
US (2) US7365363B2 (sv)
DE (1) DE102005017814B4 (sv)
SE (1) SE527922C2 (sv)

Families Citing this family (61)

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JP4775102B2 (ja) * 2005-05-09 2011-09-21 住友電気工業株式会社 半導体装置の製造方法
JP4939797B2 (ja) * 2005-11-01 2012-05-30 ルネサスエレクトロニクス株式会社 スイッチング半導体装置
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JP5017865B2 (ja) * 2006-01-17 2012-09-05 富士電機株式会社 半導体装置
CA2636776A1 (en) * 2006-01-30 2007-08-02 Sumitomo Electric Industries, Ltd. Method of manufacturing silicon carbide semiconductor device
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US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
EP2631951B1 (en) * 2006-08-17 2017-10-11 Cree, Inc. High power insulated gate bipolar transistors
JP5562641B2 (ja) 2006-09-14 2014-07-30 クリー インコーポレイテッド マイクロパイプ・フリーの炭化ケイ素およびその製造方法
JP5071763B2 (ja) * 2006-10-16 2012-11-14 独立行政法人産業技術総合研究所 炭化ケイ素半導体装置およびその製造方法
JP2008112834A (ja) * 2006-10-30 2008-05-15 Sumitomo Electric Ind Ltd 炭化ケイ素半導体装置の製造方法
JP5098295B2 (ja) * 2006-10-30 2012-12-12 株式会社デンソー 炭化珪素半導体装置の製造方法
JP5098294B2 (ja) * 2006-10-30 2012-12-12 株式会社デンソー 炭化珪素半導体装置の製造方法
KR20090089362A (ko) * 2006-11-10 2009-08-21 스미토모덴키고교가부시키가이샤 탄화규소 반도체 장치 및 그 제조 방법
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JP4046140B1 (ja) * 2006-11-29 2008-02-13 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
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JP2008294171A (ja) * 2007-05-24 2008-12-04 Oki Electric Ind Co Ltd 半導体デバイス及びその製造方法
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
JP2010098189A (ja) * 2008-10-17 2010-04-30 Toshiba Corp 半導体装置
JP5969209B2 (ja) 2008-12-15 2016-08-17 カードラボ エーピーエスＣａｒｄｌａｂ Ａｐｓ Ｒｆｉｄタグ
JP4978637B2 (ja) * 2009-02-12 2012-07-18 株式会社デンソー 炭化珪素単結晶の製造方法
JP2010184833A (ja) * 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
CN102414818B (zh) 2009-04-30 2013-03-20 松下电器产业株式会社 半导体元件、半导体装置及电力变换器
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8629509B2 (en) * 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8541787B2 (en) * 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
CN102473645B (zh) 2009-08-19 2013-07-10 松下电器产业株式会社 半导体元件、半导体装置以及功率变换器
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
EP2490247A1 (en) * 2009-10-13 2012-08-22 Sumitomo Electric Industries, Ltd. Silicon carbide substrate manufacturing method and silicon carbide substrate
JP5439215B2 (ja) * 2010-02-10 2014-03-12 株式会社東芝 半導体装置および半導体装置の製造方法
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
JP5616665B2 (ja) 2010-03-30 2014-10-29 ローム株式会社 半導体装置
JP2011228643A (ja) * 2010-03-30 2011-11-10 Shindengen Electric Mfg Co Ltd 半導体装置及びその製造方法
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
KR101063935B1 (ko) 2010-07-16 2011-09-14 한국전기연구원 자기정렬법을 이용한 탄화규소 전계효과 트랜지스터 소자의 제조방법
CN102122666B (zh) * 2011-01-13 2012-11-28 电子科技大学 使用高介电常数栅介质的耐压器件
JP5584823B2 (ja) * 2011-03-29 2014-09-03 株式会社日立製作所 炭化珪素半導体装置
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
WO2012165108A1 (ja) * 2011-06-02 2012-12-06 住友電気工業株式会社 炭化珪素基板の製造方法
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
WO2013036370A1 (en) 2011-09-11 2013-03-14 Cree, Inc. High current density power module comprising transistors with improved layout
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
JP5464192B2 (ja) * 2011-09-29 2014-04-09 株式会社デンソー 半導体装置の製造方法
US9087904B2 (en) * 2012-06-08 2015-07-21 Joled Inc. Thin-film transistor having tapered organic etch-stopper layer
JP6285668B2 (ja) * 2013-09-03 2018-02-28 株式会社東芝 半導体装置及びその製造方法
US9449853B2 (en) * 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
JP6310571B2 (ja) * 2014-11-18 2018-04-11 東洋炭素株式会社 ＳｉＣ基板処理方法
JP6537590B2 (ja) 2015-02-18 2019-07-03 昭和電工株式会社 炭化珪素単結晶インゴットの製造方法
CN108138360B (zh) * 2015-10-07 2020-12-08 住友电气工业株式会社 碳化硅外延基板及用于制造碳化硅半导体装置的方法
JP6768492B2 (ja) * 2016-12-26 2020-10-14 昭和電工株式会社 ＳｉＣインゴットの製造方法
CN106847879B (zh) * 2017-01-19 2021-12-03 北京世纪金光半导体有限公司 一种斜面沟道的SiC MOSFET器件及制备方法
JP6862381B2 (ja) * 2018-03-02 2021-04-21 株式会社東芝 半導体装置
CN115842057A (zh) * 2022-12-27 2023-03-24 飞锃半导体（上海）有限公司 半导体结构及形成方法
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Also Published As

Publication number Publication date
DE102005017814A1 (de) 2005-12-22
DE102005017814B4 (de) 2016-08-11
US20050230686A1 (en) 2005-10-20
US7968892B2 (en) 2011-06-28
US20070281173A1 (en) 2007-12-06
SE527922C2 (sv) 2006-07-11
US7365363B2 (en) 2008-04-29

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