JPH10125929A - Peeling method - Google Patents

Abstract

(57) [Problem] To provide a peeling method which can be easily peeled irrespective of characteristics, conditions and the like of an object to be peeled, and in particular, can be transferred to various transfer bodies. A light-absorbing layer (2) made of, for example, amorphous silicon is provided on a light-transmitting substrate (1).
Forming a separation layer 2 which is a laminate of the metal layer 1 and a reflective layer 22 made of a metal thin film; forming a transfer layer 4 on the separation layer 2 directly or via a predetermined intermediate layer 3; Bonding the transfer body 6 to the transfer layer 4 on the side opposite to the substrate 1 via the adhesive layer 5, and irradiating the separation layer 2 with irradiation light 7 such as laser light from the back side of the substrate 1, 21 to cause ablation to occur, to cause separation in the layer of the separation layer 2 and / or at the interface, to separate the transferred layer 4 from the substrate 1, and transfer it to the transfer body 6.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of peeling an object to be peeled, and more particularly to a method of peeling a layer to be transferred made of a thin film such as a functional thin film and transferring the transferred layer to a transfer body such as a transparent substrate. It is.

[0002]

2. Description of the Related Art For example, when manufacturing a liquid crystal display (LCD) using a thin film transistor (TFT), a process of forming the thin film transistor on a transparent substrate by CVD or the like is performed.

The thin film transistors include those using amorphous silicon (a-Si) and those using polysilicon (p-S
i), and those formed of polysilicon are classified into those formed through a high-temperature process and those formed through a low-temperature process.

Since such a thin film transistor is formed on a transparent substrate at a high temperature, it is necessary to use a transparent substrate made of a material having excellent heat resistance. Therefore, at present, a transparent substrate made of quartz glass is used because it has a high softening point and a high melting point and can sufficiently withstand a temperature of about 1000 ° C. in a high-temperature process. In the low-temperature process,
Since a temperature around 500 ° C. becomes the highest process temperature, heat-resistant glass is used.

However, quartz glass having such excellent heat resistance is a rare and extremely expensive material as compared with ordinary glass, and it is difficult to produce a large transparent substrate. In addition, heat-resistant glass can be made larger than quartz glass, but it is significantly more expensive than ordinary glass. In addition, both quartz glass and heat-resistant glass are brittle and easily broken, and the weight is large. This is a serious drawback in configuring an LCD. Therefore, it has been an obstacle in producing a large and inexpensive liquid crystal display.

[0006]

SUMMARY OF THE INVENTION An object of the present invention is to provide a peeling method which can be easily peeled irrespective of the properties and conditions of an object to be peeled, and in particular, can be transferred to various transfer members. To provide.

[0007]

This and other objects are achieved by the present invention which is defined below as (1) to (30).

(1) A separation method for separating an object to be separated, which is present on a substrate through a separation layer composed of a plurality of layers, from the substrate, wherein the separation layer is irradiated with irradiation light. A separation method, wherein separation is caused in the separation layer and / or at the interface, and the object to be separated is separated from the substrate.

(2) A separation method for separating an object to be separated, which is present on a light-transmitting substrate through a separation layer formed of a laminate of a plurality of layers, from the substrate, wherein the separation layer is provided from the substrate side. A peeling method in which light is irradiated onto the substrate to cause peeling in the layer and / or interface of the separation layer, and the object to be peeled is separated from the substrate.

(3) A method of peeling a transfer layer formed on a substrate through a separation layer composed of a laminate of a plurality of layers from the substrate and transferring the transfer layer to another transfer body, wherein After joining the transfer body to the side of the layer opposite to the substrate, the separation layer is irradiated with irradiation light to irradiate the inside of the separation layer and / or
Alternatively, a peeling method is provided in which peeling occurs at an interface, and the transferred layer is separated from the substrate and transferred to the transfer body.

(4) A method in which a transfer-receiving layer formed on a light-transmitting substrate via a separation layer composed of a laminate of a plurality of layers is peeled off from the substrate and transferred to another transfer member. After bonding the transfer body to the opposite side of the transfer-receiving layer from the substrate, the separation layer is irradiated with irradiation light from the substrate side to cause separation in the separation layer and / or at the interface. Separating the transferred layer from the substrate and transferring the transferred layer to the transfer body.

(5) A step of forming a separation layer composed of a laminate of a plurality of layers on a light-transmitting substrate, and a step of forming a transferred layer on the separation layer directly or via a predetermined intermediate layer Bonding a transfer body to the opposite side of the transfer-receiving layer from the substrate; and irradiating the separation layer with irradiation light from the substrate side to cause separation in the separation layer and / or at the interface. Separating the transferred layer from the substrate and transferring the transferred layer to the transfer body.

(6) The peeling method according to the above (5), further comprising a step of removing the separation layer adhering to the substrate side and / or the transfer body side after the transfer of the transfer-receiving layer to the transfer body. Method.

(7) The peeling method according to any one of the above (3) to (6), wherein the transferred layer is a functional thin film or a thin film device.

(8) The peeling method according to any one of the above (3) to (6), wherein the transferred layer is a thin film transistor.

(9) The peeling method according to any one of the above (3) to (8), wherein the transfer body is a transparent substrate.

(10) The transfer body has a glass transition point (T
g) or the peeling method according to any one of the above (3) to (9), which is made of a material having a softening point of Tmax or less.

(11) The transfer body has a glass transition point (T
g) or the peeling method according to any one of the above (3) to (10), which is made of a material having a softening point of 800 ° C. or lower.

(12) The peeling method according to any one of the above (3) to (11), wherein the transfer body is made of a synthetic resin or a glass material.

(13) The peeling method according to any one of the above (1) to (12), wherein the substrate has heat resistance.

(14) The substrate according to any one of (3) to (12) above, wherein the strain point is made of a material having a maximum temperature of Tmax or more when the maximum temperature at the time of forming the layer to be transferred is Tmax. The stripping method as described.

(15) The separation layer includes at least two layers having different compositions or characteristics.
The peeling method according to any one of 4).

(16) The light-emitting device according to any one of (1) to (14), wherein the separation layer includes a light-absorbing layer that absorbs the irradiation light, and another layer having a different composition or characteristics from the light-absorbing layer. 4. The peeling method according to 1.

(17) The stripping method according to any one of (1) to (14), wherein the separation layer includes a light absorbing layer that absorbs the irradiation light and a light-shielding layer that blocks the irradiation light.

(18) The stripping method according to the above (17), wherein the light shielding layer is located on the opposite side of the light absorbing layer from the incident direction of the irradiation light.

(19) The stripping method according to the above (17) or (18), wherein the light-shielding layer is a reflection layer that reflects the irradiation light.

(20) The peeling method according to the above (19), wherein the reflection layer is formed of a metal thin film.

(21) The separation layer is peeled off due to disappearance or decrease of the interatomic or intermolecular bonding force of the substance constituting the light absorbing layer.
0) The peeling method according to any one of the above.

(22) The stripping method according to any one of the above (1) to (21), wherein the separation layer has a light absorption layer made of amorphous silicon.

(23) The stripping method according to the above (22), wherein the amorphous silicon contains H (hydrogen) in an amount of 2 at% or more.

(24) The peeling method according to any one of the above (1) to (21), wherein the separation layer has a light absorbing layer made of ceramics.

(25) The stripping method according to any one of the above (1) to (21), wherein the separation layer has a light absorbing layer made of a metal.

(26) The stripping method according to any one of the above (1) to (21), wherein the separation layer has a light absorbing layer made of an organic polymer material.

(27) The organic polymer material is -CH
_{-, - CH 2 -, -} CO -, - CONH -, - NH-,
The stripping method according to the above (26), which has at least one kind of bond of -COO-, -N = N-, and -CH = N-.

(28) The peeling method according to any one of the above (1) to (27), wherein the irradiation light is a laser light.

(29) The wavelength of the laser light is 100 to
The stripping method according to the above (28), wherein the thickness is 350 nm.

(30) The wavelength of the laser light is 350 to
The stripping method according to the above (28), wherein the thickness is 1200 nm.

[0038]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a peeling method according to the present invention will be described in detail with reference to preferred embodiments shown in the accompanying drawings.

1 to 8 are sectional views showing the steps of an embodiment of the peeling method of the present invention. Hereinafter, the steps of the peeling method (transfer method) of the present invention will be sequentially described based on these drawings.

[1] As shown in FIG. 1, a separation layer 2 composed of a laminate of a plurality of layers is formed on one surface (separation layer formation surface 11) of a substrate 1. In this case, the separation layer 2 is provided in order from a layer closer to the substrate 1 by a method described later.

When the substrate 1 is irradiated with the irradiation light 7 from the substrate 1 side, it is preferable that the substrate 1 has a light-transmitting property through which the irradiation light 7 can pass.

In this case, the transmittance of the irradiation light 7 is preferably at least 10%, more preferably at least 50%. If the transmittance is too low, the attenuation (loss) of the irradiation light 7 increases, and a larger amount of light is required to peel off the separation layer 2.

The substrate 1 is preferably made of a highly reliable material, particularly preferably a material having excellent heat resistance. The reason for this is that, for example, when forming the transferred layer 4 and the intermediate layer 3 described later, the process temperature increases depending on the type and the forming method (for example, 3
(About 50 to 1000 ° C).
This is because if the substrate 1 is excellent in heat resistance, the range of setting of film forming conditions such as temperature conditions in forming the transferred layer 4 and the like on the substrate 1 is widened.

Therefore, it is preferable that the substrate 1 be made of a material having a strain point equal to or higher than Tmax, where Tmax is the maximum temperature at the time of forming the layer 4 to be transferred. Specifically, the constituent material of the substrate 1 preferably has a strain point of 350 ° C. or higher, more preferably 500 ° C. or higher. Examples of such a material include heat-resistant glass such as quartz glass, soda glass, Corning 7059, and NEC Glass OA-2.

If the process temperature for forming the later-described separation layer 2, intermediate layer 3 and transfer layer 4 is to be lowered, an inexpensive glass material or synthetic resin having a low melting point is also used for the substrate 1. be able to.

The thickness of the substrate 1 is not particularly limited, but is usually preferably about 0.1 to 5.0 mm, and more preferably about 0.5 to 1.5 mm. If the thickness of the substrate 1 is too small, the strength is reduced. If the thickness is too large, the irradiation light 7 is likely to be attenuated when the transmittance of the substrate 1 is low. When the transmittance of the irradiation light 7 of the substrate 1 is high, the thickness may exceed the upper limit.

It is preferable that the thickness of the separation layer forming portion of the substrate 1 is uniform so that the irradiation light 7 can be uniformly irradiated.

Further, the separation layer forming surface 11 and the irradiation light incident surface 12 of the substrate 1 are not limited to the flat surface as shown, but may be a curved surface.

According to the present invention, the substrate 1 is separated by separating the separation layer 2 between the substrate 1 and the transferred layer 4 instead of removing the substrate 1 by etching or the like. At the same time, there is a wide range of options for the substrate 1 such as using a relatively thick substrate.

Next, the separation layer 2 will be described.

The separation layer 2 absorbs irradiation light 7 described later,
It has a property of causing peeling (hereinafter, referred to as “intralayer peeling” or “interfacial peeling”) in the layer and / or at the interface.

The separation layer 2 includes at least two layers having different compositions or characteristics. In particular, the light absorption layer 21 that absorbs the irradiation light 7 and the light absorption layer 21 that has a different composition or characteristics. And a layer of Further, it is preferable that the other layer is a light shielding layer (reflection layer 22) for shielding the irradiation light 7. This light-shielding layer is composed of the light-absorbing layer 2
1 is located on the opposite side (upper side in the figure) to the incident direction of the irradiation light 7, and reflects or absorbs the irradiation light 7 and
Has a function of preventing or suppressing intrusion into the layer to be transferred 4 side.

In this embodiment, a reflection layer 22 for reflecting the irradiation light 7 is formed as a light shielding layer. This reflection layer 22
The irradiation light 7 is preferably at least 10%, more preferably at least 30%.
% As long as it can reflect at a reflectance of not less than%.

Examples of such a reflective layer 22 include a metal thin film composed of a single layer or a plurality of layers, and an optical thin film composed of a laminate of a plurality of thin films having different refractive indices. For that reason, it is preferable that the metal film is mainly composed of a metal thin film.

As a constituent metal of the metal thin film, for example, T
a, W, Mo, Cr, Ni, Co, Ti, Pt, Pd,
Ag, Au, Al, and the like, or an alloy containing at least one of these as a basic component may be used. Preferable additional elements constituting the alloy include, for example, Fe, Cu,
C, Si, and B are mentioned. By adding these, the thermal conductivity and the reflectance can be controlled. Also,
When the reflective layer 22 is formed by physical vapor deposition, there is an advantage that a target can be easily manufactured. Further, by alloying, there is an advantage that a material can be easily obtained and the cost is lower than that of a pure metal.

The thickness of the reflection layer (light-shielding layer) 22 is not particularly limited, but is usually 10 nm to 10 μm.
Is preferably about 50 nm to 5 μm.
If the thickness is too large, it takes time to form the reflective layer 22, and it takes time to remove the reflective layer 22 later. If the thickness is too small, the light-shielding effect may be insufficient depending on the film composition.

The light absorption layer 21 is a layer that contributes to the separation of the separation layer 2, absorbs the irradiation light 7, and eliminates or reduces the bonding force between the atoms or molecules of the substance constituting the light absorption layer 21. And phenomenologically, ablation or the like causes delamination and / or interfacial delamination.

Further, by the irradiation of the irradiation light 7, a gas may be released from the light absorption layer 21 and a separation effect may be exhibited. That is, the case where the component contained in the light absorption layer 21 is released as a gas and the case where the separation layer 2 absorbs light to become a gas for a moment and the vapor is released and contributes to the separation. is there.

The composition of the light absorbing layer 21 is as follows.
For example, the following are mentioned.

Amorphous Silicon (a-Si) This amorphous silicon may contain H (hydrogen). In this case, the content of H is preferably about 2 at% or more, and more preferably about 2 to 20 at%. As described above, when H is contained in a predetermined amount, irradiation of the irradiation light 7 releases hydrogen, and an internal pressure is generated in the separation layer 2, which serves as a force for peeling the upper and lower thin films.

The H content in the amorphous silicon can be adjusted by appropriately setting film forming conditions such as gas composition, gas pressure, gas atmosphere, gas flow rate, temperature, substrate temperature, and input power in CVD. Can be adjusted.

Various oxide ceramics such as silicon oxide or silicate compound, titanium oxide or titanate compound, zirconium oxide or zirconate compound, lanthanum oxide or lanthanic acid compound, dielectric (ferroelectric) or semiconductor silicon oxide , SiO, SiO ₂ , and Si ₃ O _2. Examples of the silicate compound include K ₂ SiO
₃ , Li ₂ SiO ₃ , CaSiO ₃ , ZrSiO ₄ , N
a ₂ SiO ₃ .

As the titanium oxide, TiO, Ti ₂ O
₃ and TiO _2. Examples of the titanate compound include BaTiO ₄ , BaTiO ₃ and Ba ₂ Ti ₉
O ₂₀ , BaTi ₅ O ₁₁ , CaTiO ₃ , SrTiO ₃ ,
PbTiO ₃ , MgTiO ₃ , ZrTiO ₂ , SnTi
O ₄ , Al ₂ TiO ₅ and FeTiO ₃ are mentioned.

Examples of zirconium oxide include ZrO ₂ , and examples of zirconate compounds include BaZrO 2
₃ , ZrSiO ₄ , PbZrO ₃ , MgZrO ₃ , K ₂
ZrO ₃ is mentioned.

PZT, PLZT, PLLZT, PB
Ceramic or dielectric material such as ZT (ferroelectric) silicon nitride, aluminum nitride, as the nitride ceramic organic polymeric materials Organic polymeric materials such as titanium _{nitride, -CH -, - CH 2 -} , - C
O- (ketone), -CONH- (amide), -NH-
(Imido), -COO- (ester), -N = N- (azo), -CH = N- (shif) or the like (these bonds are broken by irradiation with irradiation light 7); In particular, any material having many of these bonds may be used. Specifically, for example, polyolefin such as polyethylene and polypropylene, polyimide, polyamide, polyester, polymethyl methacrylate (PMM
A), polyphenylene sulfide (PPS), polyether sulfone (PES), epoxy resin and the like.

Metal As the metal, for example, Al, Li, Ti, Mn, I
n, Sn, Y, La, Ce, Nd, Pr, Sm, Gd
Or an alloy containing at least one of these.

Specific examples of the hydrogen storage alloy include a hydrogen storage alloy of a rare earth transition metal compound such as LaNi ₅ or a Ti-based or Ca-based hydrogen storage alloy storing hydrogen.

Specific examples of the nitrogen storage alloy include rare earth iron, rare earth cobalt, rare earth nickel such as Sm—Fe and Nd—Co, and a rare earth manganese compound in which nitrogen is stored.

The thickness of the light-absorbing layer 21 varies depending on the purpose of peeling and various conditions such as the composition, layer structure, and forming method of the separation layer 2. However, it is usually preferably about 1 nm to 20 μm, and preferably about 10 nm. About 2 μm, more preferably about 40 μm.
More preferably, it is about nm to 1 μm.

If the thickness of the light absorbing layer 21 is too small, the uniformity of the film is impaired, and the peeling may be uneven.
On the other hand, if the film thickness is too large, it is necessary to increase the power (light amount) of the irradiation light 7 in order to secure good peelability, and it takes time to remove the separation layer 2 later. . It is preferable that the thicknesses of the light absorbing layer 21 and the reflecting layer 22 be as uniform as possible.

For the same reason as described above, the total thickness of the separation layer 2 is more preferably about 2 nm to 50 μm, and further preferably about 20 nm to 20 μm.

Each layer constituting the separation layer 2 (in this embodiment,
The method of forming the light absorption layer 21 and the reflection layer 22) is not particularly limited, and is appropriately selected according to various conditions such as a film composition and a film thickness. For example, CVD (MOCVD, low pressure CVD, EC
R-CVD), vapor deposition, molecular beam deposition (MB), sputtering, ion plating, various vapor deposition methods such as PVD, electroplating, immersion plating (dipping),
Various plating methods such as electroless plating, Langmuir-Blodgett (LB) method, coating methods such as spin coating, spray coating and roll coating, various printing methods, transfer methods, ink jet methods, powder jet methods, and the like. Can be formed by combining two or more of the above. In addition,
The method of forming the light absorption layer 21 and the reflection layer 22 may be the same or different, and is appropriately selected according to the composition or the like.

For example, when the composition of the light absorbing layer 21 is amorphous silicon (a-Si), CVD, especially low pressure CVD
It is preferable to form a film by plasma CVD.

When the light absorbing layer 21 is made of a ceramic by a sol-gel method or made of an organic polymer material, it is preferable to form the film by a coating method, particularly spin coating.

The reflection layer 22 made of a metal thin film is formed by vapor deposition, molecular beam vapor deposition (MB), laser ablation vapor deposition,
It is preferable to form by sputtering, ion plating, the above-mentioned various plating, and the like.

The formation of each layer constituting the separation layer 2 is as follows.
Each may be performed in two or more steps (for example, a layer forming step and a heat treatment step).

[2] As shown in FIG. 2, an intermediate layer (underlayer) 3 is formed on the separation layer 2.

The intermediate layer 3 is formed for various formation purposes. For example, a protective layer, an insulating layer, a conductive layer, a radiation layer, which physically or chemically protects a layer to be transferred 4 described later during manufacturing or use. Examples of the light-shielding layer include a layer that functions as a light-shielding layer, a barrier layer that prevents migration of components to or from the transferred layer 4, and a reflective layer.

The composition of the intermediate layer 3 is appropriately set according to the purpose of its formation. For example, the composition of the intermediate layer 3 is formed between the separation layer 2 including the light absorbing layer 21 made of amorphous silicon and the transfer layer 4 made of a thin film transistor. In the case of the intermediate layer 3
Silicon oxide such as SiO ₂ , the separation layer 2 and PZT
In the case of the intermediate layer 3 formed between the transfer layer 4 and the transfer layer 4, a metal such as Pt, Au, W, Ta, Mo, Al, Cr, Ti, or an alloy mainly containing these is used.

The thickness of the intermediate layer 3 is appropriately determined according to the purpose of forming the intermediate layer 3 and the degree of the function that can be exhibited.
Usually, it is preferably about 10 nm to 5 μm,
More preferably, it is about nm to about 1 μm.

The method for forming the intermediate layer 3 is the same as the method for forming the intermediate layer 3. Also,
The formation of the intermediate layer 3 may be performed in two or more steps.

The intermediate layer 3 may be formed of two or more layers having the same or different composition. In the present invention, the transfer layer 4 may be formed directly on the separation layer 2 without forming the intermediate layer 3.

[3] As shown in FIG. 3, a transferred layer (substrate) 4 is formed on the intermediate layer 3.

The transfer layer 4 is a layer to be transferred to a transfer body 6 described later, and can be formed by the same method as the formation method described above for the separation layer 2.

The purpose, type, form, structure, composition, physical or chemical properties, etc. of the layer 4 to be transferred are not particularly limited, but in consideration of the purpose and usefulness of the transfer, a thin film, especially a functional thin film Alternatively, it is preferably a thin film device.

As the functional thin film and the thin film device,
For example, thin film transistors, thin film diodes, other thin film semiconductor devices, electrodes (eg, transparent electrodes such as ITO and mesa films), photoelectric conversion elements used for solar cells and image sensors, switching elements, memories, piezoelectric elements, etc. Actuators, micromirrors (piezoelectric thin film ceramics), magnetic recording media, magneto-optical recording media, recording media such as optical recording media, magnetic recording thin-film heads, coils, inductors, thin-film high-permeability materials and micro-magnetic devices combining them, Optical thin films such as filters, reflective films, dichroic mirrors, and polarizing elements, semiconductor thin films, superconducting thin films (eg, YBCO thin films), magnetic thin films, metal multilayer thin films, metal ceramic multilayer thin films, metal semiconductor multilayer thin films, ceramic semiconductor multilayer thin films, An organic thin film and a multilayer thin film of another substance;

Among these, the application to a thin film device, a micro magnetic device, a structure of a micro three-dimensional structure, an actuator, a micro mirror, and the like is particularly high and preferable.

Such a functional thin film or thin film device is usually formed through a relatively high process temperature in relation to the method of forming the functional thin film or the thin film device. Therefore, in this case, as described above, the substrate 1 needs to have a high reliability that can withstand the process temperature.

The transferred layer 4 may be a single layer or a laminate of a plurality of layers. Further, a predetermined patterning such as the thin film transistor may be applied. The formation (lamination) and patterning of the transfer-receiving layer 4 are performed by a predetermined method according to the method. Such a transferred layer 4 is usually formed through a plurality of steps.

The formation of the transfer-receiving layer 4 by the thin film transistor is described in, for example, Japanese Patent Publication No. 2-50630 or H.
Ohshima et al: International Symposium Digest of
Technical Papers SID 1983 ”B / W and Color LC Video
Display Addressed by PolySi TFTs ”.

The thickness of the transferred layer 4 is not particularly limited, either, and is appropriately set according to various conditions such as the purpose of formation, function, composition, and characteristics. When the layer 4 to be transferred is a thin film transistor, the total thickness is preferably about 0.5 to 200 μm, more preferably about 1.0 to 10 μm. In the case of other thin films, a suitable total thickness may be in a wider range, for example, about 50 nm to 1000 μm.

The layer 4 to be transferred is not limited to a thin film as described above, but may be a thick film such as a coating film or a sheet. )
May be an object to be transferred or an object to be peeled.

[4] As shown in FIG. 4, an adhesive layer 5 is formed on the layer to be transferred (object to be peeled) 4, and the transfer body 6 is bonded (joined) via the adhesive layer 5.

Preferable examples of the adhesive constituting the adhesive layer 5 include a light-curable adhesive such as a reaction-curable adhesive, a thermosetting adhesive, and an ultraviolet-curable adhesive, and an anaerobic-curable adhesive. Various curable adhesives can be used. As the composition of the adhesive,
For example, any type such as an epoxy type, an acrylate type, and a silicone type may be used. The formation of the adhesive layer 5 is performed by, for example, a coating method.

In the case of using the curable adhesive, for example, a curable adhesive is applied on the layer 4 to be transferred, and a transfer member 6 described later is bonded thereon, and then cured according to the characteristics of the curable adhesive. The transferable layer 4 and the transfer body 6 are adhered and fixed by curing the curable adhesive by a method.

In the case of a photocurable adhesive, it is preferable that after the translucent transfer member 6 is disposed on the adhesive layer 5, light is irradiated from above the transfer member 6 to cure the adhesive. Further, if the substrate 1 is translucent, it is preferable to cure the adhesive by irradiating light from both sides of the substrate 1 and the transfer body 6, which is preferable because the curing is ensured.

It is to be noted that, different from the illustration, the adhesive layer 5 may be formed on the transfer body 6 side, and the transferred layer 4 may be bonded thereon. Further, an intermediate layer as described above may be provided between the transfer layer 4 and the adhesive layer 5. Further, for example, when the transfer body 6 itself has an adhesive function, the formation of the adhesive layer 5 may be omitted.

The transfer body 6 is not particularly limited.
Substrates (plate materials), particularly transparent substrates, may be mentioned. Note that such a substrate may be a flat plate or a curved plate.

The transfer member 6 may be inferior to the substrate 1 in properties such as heat resistance and corrosion resistance. The reason is that, in the present invention, the transferred layer 4 is formed on the substrate 1 side,
After that, since the transferred layer 4 is transferred onto the transfer member 6, the characteristics required for the transfer member 6, especially the heat resistance, do not depend on the temperature conditions at the time of forming the transferred layer 4.

Accordingly, assuming that the maximum temperature at the time of forming the transfer layer 4 is Tmax, a material having a glass transition point (Tg) or softening point of Tmax or less can be used as the material of the transfer body 6. For example, the transfer body 6 can be made of a material having a glass transition point (Tg) or a softening point of preferably 800 ° C. or lower, more preferably 500 ° C. or lower, and further preferably 320 ° C. or lower.

The mechanical properties of the transfer body 6 are preferably those having some rigidity (strength), but may be those having flexibility and elasticity.

As a constituent material of such a transfer body 6,
Various synthetic resins and various glass materials are mentioned, and particularly, various synthetic resins and ordinary (low melting point) inexpensive glass materials are preferable.

As the synthetic resin, any of a thermoplastic resin and a thermosetting resin may be used. For example, polyolefin such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA),
Cyclic polyolefin, modified polyolefin, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, polyimide, polyamideimide, polycarbonate, poly- (4-methylpentene-1), ionomer, acrylic resin, polymethyl methacrylate, acrylonitrile-butadiene- Styrene copolymer (ABS
Resin), acrylonitrile-styrene copolymer (AS resin), butadiene-styrene copolymer, polyoxymethylene, polyvinyl alcohol (PVA), ethylene-vinyl alcohol copolymer (EVOH), polyethylene terephthalate (PET), polybutylene Terephthalate (PBT), polycyclohexane terephthalate (PC
T) and other polyesters, polyethers, polyetherketone (PEK), polyetheretherketone (PEE)
K), polyetherimide, polyacetal (PO
M), polyphenylene oxide, modified polyphenylene oxide, polysulfone, polyether sulfone, polyphenylene sulfide, polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluororesins, styrene, polyolefin , Polyvinyl chloride, polyurethane, polyester, polyamide, polybutadiene, trans polyisoprene, fluorine rubber,
Various thermoplastic elastomers such as chlorinated polyethylene,
Epoxy resins, phenolic resins, urea resins, melamine resins, unsaturated polyesters, silicone resins, polyurethanes, and the like, or copolymers, blends, polymer alloys, and the like based on these, and one or two of these More than one kind can be used in combination (for example, as a laminate of two or more layers).

Examples of the glass material include silicate glass (quartz glass), alkali silicate glass, soda lime glass, potassium lime glass, lead (alkali) glass, barium glass, borosilicate glass and the like. Of these, those other than silicate glass have a lower melting point than silicate glass, are relatively easy to mold and process, and are inexpensive, and are therefore preferable.

When a transfer body 6 made of synthetic resin is used, the large transfer body 6 can be integrally formed and has a complicated shape such as a body having a curved surface or irregularities. However, various advantages such as easy production and low material cost and low production cost can be enjoyed. Therefore, a large and inexpensive device (for example, a liquid crystal display) can be easily manufactured.

The transfer member 6 may be one that constitutes an independent device itself, such as a liquid crystal cell, or a device such as a color filter, an electrode layer, a dielectric layer, an insulating layer, or a semiconductor element. May be a part of the above.

Further, the transfer member 6 may be a material such as metal, ceramics, stone, wood, paper, or the like, or may be on any surface constituting a product (on a clock, on an air conditioner, or on a print surface). On a substrate, etc.), or on the surface of a structure such as a wall, a column, a beam, a ceiling, or a window glass.

[5] As shown in FIG. 5, the irradiation light 7 is irradiated from the back side of the substrate 1 (the irradiation light incident surface 12 side). After passing through the substrate 1, the irradiation light 7 is applied to the separation layer 2 from the interface 2 a side. More specifically, a part of the irradiation light 7 which is irradiated and absorbed by the light absorption layer 21 and not absorbed by the light absorption layer 21 is reflected by the reflection layer 22 and transmitted through the light absorption layer 21 again.

As a result, the separation layer 2 is delaminated and / or
Alternatively, interfacial peeling occurs and the bonding force decreases or disappears. Therefore, as shown in FIG. 6 or FIG.
Is separated from the substrate 1, the transferred layer 4 separates from the substrate 1,
The image is transferred to the transfer body 6.

FIG. 6 shows a case in which separation in the separation layer 2 has occurred, and FIG. 7 shows a case in which separation in the separation layer 2 at the interface 2a has occurred. The principle that the separation and / or interfacial separation of the separation layer 2 occurs is that ablation occurs in the constituent material of the light absorption layer 21, the release of gas contained in the light absorption layer 21, and immediately after the irradiation. It is presumed that this is due to a phase change such as melting and transpiration that occurs during the heating.

Here, ablation means that a solid material (constituting material of the light absorbing layer 21) that has absorbed the irradiation light is photochemically or thermally excited to break the bonds of atoms or molecules on its surface or inside. The term "emission" refers to a phenomenon in which all or a part of the constituent material of the light absorption layer 21 undergoes a phase change such as melting and evaporation (vaporization). In addition, a minute foaming state may be caused by the phase change, and the bonding force may be reduced.

Whether the separation layer 2 causes separation within the layer, separation at the interface, or both of them depends on the layer configuration of the separation layer 2, the composition and thickness of the light absorbing layer 21, and other various factors. One of the factors depends on conditions such as the type, wavelength, intensity, and reaching depth of the irradiation light 7.

The irradiation light 7 may be any light as long as it causes separation within the separation layer 2 and / or separation at the interface, such as X-ray, ultraviolet light, visible light, infrared light (heat ray), and laser light. , Millimeter wave, microwave, electron beam,
Radiation (α-rays, β-rays, γ-rays) and the like can be mentioned, and among them, laser light is preferable because it easily causes separation (ablation) of the separation layer 2.

Examples of a laser device for generating this laser beam include various gas lasers and solid-state lasers (semiconductor lasers). Excimer lasers, Nd-YAG lasers, Ar lasers, CO ₂ lasers, CO lasers, He— N
An e-laser or the like is suitably used, and among them, an excimer laser is particularly preferable.

Since the excimer laser outputs high energy in a short wavelength range, ablation can be caused in the light absorbing layer 21 in a very short time, and therefore, the reflection layer 22, the intermediate layer 3, and the adjacent or adjacent layers can be ablated. The separation layer 2 can be peeled off without substantially increasing the temperature of the transfer-receiving layer 4, the substrate 1, or the like, that is, without causing deterioration or damage.

When the irradiation light for causing ablation in the light absorption layer 21 has wavelength dependency, the wavelength of the laser light to be irradiated is preferably about 100 to 350 nm.

When a separation characteristic is given to the separation layer 2 by causing a phase change such as gas release, vaporization, and sublimation, the wavelength of the irradiated laser beam is 350 to 1200 nm.
It is preferred to be on the order of magnitude.

The energy density of the irradiated laser beam, particularly the energy density of an excimer laser, is
It is preferably about 10 to 5000 mJ / cm ² ,
More preferably, it is about 500 mJ / cm ² . Further, the irradiation time is preferably about 1 to 1000 nsec,
More preferably, it is about 10 to 100 nsec. If the energy density is low or the irradiation time is short, sufficient ablation does not occur, and if the energy density is high or the irradiation time is long, the separation layer 2 may be excessively broken.

Irradiation light 7 represented by such a laser light
Is preferably applied so that its intensity becomes uniform.

The irradiation direction of the irradiation light 7 is not limited to the direction perpendicular to the separation layer 2 but may be a direction inclined at a predetermined angle with respect to the separation layer 2.

When the area of the separation layer 2 is larger than one irradiation area of the irradiation light, the entire area of the separation layer 2 is
Irradiation light can be irradiated in a plurality of times. Also,
The same location may be irradiated more than once.

In addition, different types and different wavelengths (wavelength ranges)
Irradiation light (laser light) in the same area or a different area
Irradiation may be performed more than once.

In this embodiment, since the reflection layer 22 is provided adjacent to the light absorption layer 21 on the side opposite to the substrate 1, the light 7 can be effectively irradiated to the light absorption layer 21 without loss. The light shielding function of the reflection layer (light shielding layer) 22
There is an advantage that the irradiation light 7 can be prevented from being irradiated to the transferred layer 4 and the like, and adverse effects such as deterioration and deterioration of the transferred layer 4 can be prevented.

In particular, the fact that the irradiation light 7 can be irradiated to the light absorbing layer 21 effectively without loss means that the energy density of the irradiation light 7 can be reduced accordingly, that is, the irradiation area for one irradiation can be reduced. This means that a certain area of the separation layer 2 can be separated with a smaller number of irradiations, which is advantageous in manufacturing.

[6] As shown in FIG. 8, the separation layer 2 adhering to the intermediate layer 3 is removed by, for example, a method such as cleaning, etching, ashing, polishing, or a combination thereof.

In the case of separation within the separation layer 2 as shown in FIG. 6, if necessary, the light absorbing layer 2 adhering to the substrate 1 may be used.
1 is similarly removed.

If the substrate 1 is made of an expensive or rare material such as quartz glass, the substrate 1
Is preferably subjected to reuse. In other words, the present invention can be applied to the substrate 1 to be reused, and is highly useful.

Through the steps described above, the transfer of the transfer-receiving layer 4 to the transfer member 6 is completed. Thereafter, removal of the intermediate layer 3 adjacent to the layer to be transferred 4 or formation of another arbitrary layer can also be performed.

In the present invention, since the transferred layer 4 itself, which is the object to be peeled, is not directly peeled but is peeled off at the separation layer 2 joined to the layer 4 to be transferred, the object to be peeled (the layer 4 to be transferred) Irrespective of the characteristics, conditions, etc., the transfer (transfer) can be easily and surely and uniformly performed, and there is no damage to the transfer target layer (transfer target layer 4) due to the peeling operation. High reliability can be maintained.

The layer configuration of the separation layer 2 is not limited to the illustrated one. For example, the separation layer 2 may be formed by laminating a plurality of light absorbing layers different in at least one of conditions such as film composition, film thickness, and characteristics. Furthermore, in addition to these, any material may be used as long as a plurality of layers are laminated, such as a material having another layer such as the above-described reflective layer. For example, the separation layer 2 includes the first
And a three-layer laminate in which a reflective layer is interposed between the light absorbing layer and the second light absorbing layer.

The interface between the layers constituting the separation layer 2 does not necessarily need to be clear, and the composition, the concentration of a predetermined component, the molecular structure, the physical or chemical properties, and the like are continuous in the vicinity of the interface. (Having a gradient).

In the illustrated embodiment, the method of transferring the transfer-receiving layer 4 to the transfer body 6 has been described. However, the transfer method of the present invention may not perform such transfer. In this case, an object to be peeled is used instead of the above-mentioned layer to be transferred 4. The object to be peeled may be either a layered material or a material that does not constitute a layer.

The purpose of peeling the object to be peeled is, for example, removal (trimming) of an unnecessary portion of the thin film (particularly, a functional thin film) as described above, dust, oxide, heavy metal, carbon, and other impurities. Any method may be used, such as removal of attached matter and recycling of substrates and the like using the same.

The transfer body 6 is not limited to the above-described one, and may be a material having completely different properties from the substrate 1 (whether or not it has a light-transmitting property), such as various metallic materials, ceramics, carbon, paper, and rubber. ) May be used. In particular, when the transfer body 6 is a material that cannot directly form the transfer-receiving layer 4 or is not suitable for forming the transfer-receiving layer 4, the application of the present invention is highly valuable.

Further, in the illustrated embodiment, the irradiation light 7 is irradiated from the substrate 1 side. However, for example, when the adhered substance (object to be peeled) is removed, or when the transfer layer 4 is irradiated with the irradiation light 7, the irradiation light 7 is adversely affected. In the case of not receiving the light, the irradiation direction of the irradiation light 7 is not limited to the above, and the irradiation light may be irradiated from the side opposite to the substrate 1. In this case, the separation layer 2 preferably reverses the positional relationship between the light absorption layer 21 and the reflection layer 22 as described above.

As described above, the peeling method of the present invention has been described with reference to the illustrated embodiment, but the present invention is not limited to this.

For example, the transfer layer 4 may be peeled or transferred in the above-described pattern by irradiating irradiation light partially in the plane direction of the separation layer 2, that is, in a predetermined pattern. First method). In this case, in the step [5], the irradiation light incident surface 12 of the substrate 1 is subjected to masking corresponding to the pattern and irradiated with the irradiation light 7, or the irradiation position of the irradiation light 7 is changed. It can be performed by a method such as precise control.

The separation layer 2 is formed on the separation layer forming surface 1 of the substrate 1.
Instead of forming on the entire surface, the separation layer 2 can be formed in a predetermined pattern (second method). in this case,
A method in which the separation layer 2 is formed in a predetermined pattern by masking or the like in advance, or a method in which the separation layer 2 is formed on the entire surface of the separation layer formation surface 11 and then patterned or trimmed by etching or the like is possible.

According to the first and second methods as described above, the transfer of the transferred layer 4 can be performed together with the patterning and trimming.

Further, by the same method as described above,
The transfer may be repeated two or more times. In this case, if the number of transfers is an even number, the positional relationship between the front and back of the transfer layer formed on the last transfer body should be the same as the state where the transfer layer was first formed on the substrate 1. it can.

Further, a large transparent substrate (for example, an effective area of 900 mm × 1600 mm) is used as a transfer body 6, and a small unit transfer layer 4 (for example, an effective area of 45 mm × 40 mm) formed on a small substrate 1 (for example, 45 mm × 40 mm). Thin film transistor) a plurality of times (for example, about 800 times), preferably successively to adjacent positions,
The transferred layer 4 may be formed so as to cover the entire effective area of the large transparent substrate, and finally a liquid crystal display having the same size as the large transparent substrate can be manufactured.

[0142]

Next, specific examples of the present invention will be described.

(Example 1) A quartz substrate having a length of 50 mm x a width of 50 mm x a thickness of 1.1 mm (softening point: 1630 ° C, strain point: 10
70 ° C., transmittance of an excimer laser or the like: almost 100%), and two surfaces of a light absorption layer and a reflection layer are provided on one surface of the quartz substrate.
A separation layer composed of a layered product was formed.

As the light absorbing layer, amorphous silicon (a-
Low pressure CVD method (Si ₂ H ₆ gas, 425 ° C.)
Formed. The thickness of this light absorbing layer was 120 nm.

The reflective layer was formed by sputtering a metal thin film of Ta on the light absorbing layer. The thickness of the reflective layer was 100 nm, and the reflectivity of laser light described later was 60%.

Next, on the separation layer, SiO ₂ was used as an intermediate layer.
The film is formed by ECR-CVD (SiH ₄ + O ₂ gas, 100
C). The thickness of the intermediate layer was 200 nm.

Next, on the intermediate layer, a layer having a thickness of 6
A 0 nm amorphous silicon film is formed by a low pressure CVD method (Si ₂ H ₆ gas, 425 ° C.), and the amorphous silicon film is crystallized by irradiating the amorphous silicon film with laser light (wavelength 308 nm). And Thereafter, predetermined patterning, ion implantation, and the like were performed on the polysilicon film to form a thin film transistor.

Next, an ultraviolet-curing adhesive was applied on the thin film transistor (film thickness: 100 μm), and a large-sized 200 mm × 300 mm × 1.1 mm thick transfer member was applied to the coating film. Transparent glass substrate (soda glass,
(Softening point: 740 ° C., strain point: 511 ° C.), and then the adhesive was cured by irradiating ultraviolet rays from the glass substrate side, and these were bonded and fixed.

Next, a Xe-Cl excimer laser (wavelength:
308 nm) from the quartz substrate side to cause peeling (intralayer peeling and interfacial peeling) of the separation layer. Irradiated Xe-
The energy density of Cl excimer laser is 160mJ / c
m ² , and the irradiation time was 20 nsec.

Excimer laser irradiation includes spot beam irradiation and line beam irradiation. In the case of spot beam irradiation, a predetermined unit area (for example, 10 mm × 1) is used.
0 mm), and the spot irradiation is performed while shifting the spot irradiation by about 1/10 of the unit area. Also,
In the case of line beam irradiation, a predetermined unit area (for example, 3
78 mm × 0.1 mm and 378 mm × 0.3 mm (these are regions where 90% or more of energy can be obtained)
Irradiation is carried out while shifting the degree. Thereby, each point of the separation layer receives at least 10 irradiations. This laser irradiation is performed while shifting the irradiation area over the entire surface of the quartz substrate.

Thereafter, a quartz substrate and a glass substrate (transfer body)
Were separated from each other by peeling off at the separation layer, and the thin film transistor and the intermediate layer were transferred to the glass substrate side.

Thereafter, the separation layer attached to the surface of the intermediate layer on the glass substrate side was removed by etching, washing, or a combination thereof. The same processing was performed on the quartz substrate, and the quartz substrate was reused.

Example 2 The light absorbing layer was formed by adding H (hydrogen) to 1
Example 1 except that an amorphous silicon film containing 8 at% was used.
The transfer of the thin film transistor was performed in the same manner as described above.

The adjustment of the amount of H in the amorphous silicon film was performed by appropriately setting the conditions at the time of film formation by the low-pressure CVD method.

(Example 3) A ceramic thin film in which a light absorption layer was formed by a sol-gel method by spin coating (composition:
Example 1 except that PbTiO ₃ (film thickness: 200 nm) was used.
The transfer of the thin film transistor was performed in the same manner as described above.

Example 4 A ceramic thin film (composition: BaTiO) in which a light absorbing layer was formed by sputtering
₃ , the film thickness: 400 nm), and the reflective layer was formed by sputtering a metal thin film of Al (film thickness: 120 nm,
The transfer of the thin film transistor was performed in the same manner as in Example 1 except that the reflectance of the laser beam was 85%.

Example 5 A ceramic thin film (composition: Pb) in which a light absorbing layer was formed by a laser ablation method
(Zr, Ti) O ₃ (PZT), film thickness: 50 nm)
The reflective layer was formed of a metal thin film (thickness: 80) of an Fe—Cr alloy formed by sputtering using an alloy target.
Example 1 except that the laser beam reflectance was 65 nm.
The transfer of the thin film transistor was performed in the same manner as described above.

Example 6 A thin film transistor was transferred in the same manner as in Example 1 except that the light absorption layer was a polyimide film (thickness: 200 nm) formed by spin coating.

(Example 7) A Pr layer (rare earth metal layer) formed by sputtering a light absorbing layer (film thickness: 500)
nm), and the transfer of the thin film transistor was performed in the same manner as in Example 1.

Example 8 Example 2 was performed except that a Kr-F excimer laser (wavelength: 248 nm) was used as irradiation light.
The transfer of the thin film transistor was performed in the same manner as described above. The energy density of the irradiated laser was 180 mJ / c
m ² , and the irradiation time was 20 nsec.

Example 9 A thin film transistor was transferred in the same manner as in Example 2 except that an Ar laser (wavelength: 1024 nm) was used as irradiation light. The energy density of the irradiated laser was 250 mJ / cm ² , and the irradiation time was 50 nsec.

Example 10 The same procedure as in Example 1 was carried out except that the transferred layer was a thin film transistor of a polysilicon film (thickness: 90 nm) formed by a high-temperature process (1000 ° C.).
The transfer of the thin film transistor was performed.

Example 11 The procedure of Example 2 was repeated, except that the transferred layer was a thin film transistor of a polysilicon film (thickness: 80 nm) formed by a high-temperature process (1030 ° C.).
The transfer of the thin film transistor was performed.

Example 12 The procedure of Example 4 was repeated, except that the transferred layer was a thin film transistor of a polysilicon film (thickness: 80 nm) formed by a high-temperature process (1030 ° C.).
The transfer of the thin film transistor was performed.

Example 13 A thin film transistor was transferred in the same manner as in Example 1 except that a transparent substrate made of polycarbonate (glass transition point: 130 ° C.) was used as a transfer body.

Example 14 A thin film transistor was transferred in the same manner as in Example 2 except that a transparent substrate made of an AS resin (glass transition point: 70 to 90 ° C.) was used as a transfer body.

Example 15 A thin film transistor was transferred in the same manner as in Example 3 except that a transparent substrate made of polymethyl methacrylate (glass transition point: 70 to 90 ° C.) was used as a transfer body.

Example 16 A thin film transistor was transferred in the same manner as in Example 5, except that a transparent substrate made of polyethylene terephthalate (glass transition point: 67 ° C.) was used as a transfer body.

Example 17 A thin film transistor was transferred in the same manner as in Example 6, except that a transparent substrate made of high-density polyethylene (glass transition point: 77 to 90 ° C.) was used as a transfer body.

Example 18 A thin film transistor was transferred in the same manner as in Example 8, except that a transparent substrate made of polyamide (glass transition point: 145 ° C.) was used as a transfer body.

Example 19 A thin film transistor was transferred in the same manner as in Example 9 except that a transparent substrate made of an epoxy resin (glass transition point: 120 ° C.) was used as a transfer body.

Example 20 A thin film transistor was transferred in the same manner as in Example 10 except that a transparent substrate made of polymethyl methacrylate (glass transition point: 70 to 90 ° C.) was used as a transfer body.

In each of Examples 1 to 20, the state of the transferred thin film transistor was observed with the naked eye and a microscope. As a result, all of the thin film transistors were uniformly transferred without any defect or unevenness.

[0174]

As described above, according to the peeling method of the present invention, the peeling can be easily and reliably performed regardless of the properties and conditions of the object (layer to be transferred). It is possible to transfer to various transfer bodies regardless of the body. For example, even when a thin film cannot be directly formed or is not suitable for forming, a material that is easily formed, a material formed of an inexpensive material, or a large object that is difficult to move, it is transferred. To form it.

In particular, as the transfer body, materials such as various synthetic resins and glass materials having a low melting point, which have inferior properties such as heat resistance and corrosion resistance as compared with the substrate material, can be used. Therefore, for example, when manufacturing a liquid crystal display in which a thin film transistor (especially a polysilicon TFT) is formed on a transparent substrate, a quartz glass substrate having excellent heat resistance is used as a substrate, and various synthetic resins and low melting points are used as a transfer body. By using a transparent substrate made of an inexpensive and easy-to-process material such as a glass material, a large and inexpensive liquid crystal display can be easily manufactured. Such advantages are not limited to the liquid crystal display, but are the same in the manufacture of other devices.

While enjoying the above advantages,
A transferable layer such as a functional thin film can be formed and patterned on a highly reliable substrate, especially a substrate with high heat resistance such as a quartz glass substrate, regardless of the material characteristics of the transfer body. Thus, a highly reliable functional thin film can be formed on the transfer member.

Although such a highly reliable substrate is expensive, it can be reused, thereby reducing the manufacturing cost.

In the case where the separation layer has a light-shielding layer, particularly a reflective layer, transmission of irradiation light is prevented from adversely affecting a transfer-receiving layer such as a thin film transistor. Because it can be used,
The separation layer can be peeled more efficiently.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing the steps of an embodiment of the peeling method of the present invention.

FIG. 2 is a cross-sectional view showing the steps of an embodiment of the peeling method of the present invention.

FIG. 3 is a cross-sectional view showing the steps of an example of the peeling method of the present invention.

FIG. 4 is a cross-sectional view showing the steps of an embodiment of the peeling method of the present invention.

FIG. 5 is a cross-sectional view showing the steps of an embodiment of the peeling method of the present invention.

FIG. 6 is a cross-sectional view showing a step of an embodiment of the peeling method of the present invention.

FIG. 7 is a cross-sectional view showing a step of an embodiment of the peeling method of the present invention.

FIG. 8 is a cross-sectional view showing the steps of an example of the peeling method of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 11 Separation layer formation surface 12 Irradiation light incident surface 2 Separation layer 2a Interface 21 Light absorption layer 22 Reflection layer 3 Intermediate layer 4 Transfer receiving layer 5 Adhesive layer 6 Transfer body 7 Irradiation light

Claims (30)

[Claims] 1. A separation method for separating an object to be separated which is present on a substrate through a separation layer formed of a laminate of a plurality of layers from the substrate, wherein the separation layer is irradiated with irradiation light. A separation method in which separation is caused in a layer and / or an interface of the separation layer, and the object to be separated is separated from the substrate. 2. A separation method for separating an object to be separated, which is present on a light-transmitting substrate through a separation layer including a stacked body of a plurality of layers from the substrate, wherein the separation layer is formed from the substrate side. A peeling method, comprising: irradiating irradiation light to cause peeling in a layer and / or an interface of the separation layer, thereby separating the object from the substrate. 3. A transfer layer formed on a substrate via a separation layer composed of a laminate of a plurality of layers is separated from the substrate,
A method of transferring to another transfer body, wherein after joining the transfer body to the opposite side of the transfer-receiving layer from the substrate, the separation layer is irradiated with irradiation light, and the inside of the separation layer and / or Alternatively, a peeling method is provided in which peeling occurs at an interface, and the transferred layer is separated from the substrate and transferred to the transfer body. 4. A method of peeling a transferred layer formed on a light-transmitting substrate via a separation layer composed of a laminate of a plurality of layers from the substrate, and transferring the transferred layer to another transfer body. After bonding the transfer body to the opposite side of the transfer-receiving layer from the substrate, irradiating the separation layer with irradiation light from the substrate side to cause separation in the separation layer and / or at the interface, A peeling method, wherein the transferred layer is separated from the substrate and transferred to the transfer body. 5. A step of forming a separation layer composed of a laminate of a plurality of layers on a light-transmitting substrate; and a step of forming a transfer-receiving layer directly or via a predetermined intermediate layer on the separation layer. Bonding a transfer body to the opposite side of the transfer-receiving layer from the substrate; and irradiating the separation layer with irradiation light from the substrate side to cause separation in the separation layer and / or at the interface. Separating the transferred layer from the substrate and transferring the transferred layer to the transfer body. 6. After transferring the transfer-receiving layer to the transfer body,
The stripping method according to claim 5, further comprising a step of removing the separation layer attached to the substrate side and / or the transfer body side. 7. The peeling method according to claim 3, wherein the transferred layer is a functional thin film or a thin film device. 8. The method according to claim 3, wherein the transferred layer is a thin film transistor. 9. The transfer member according to claim 3, wherein the transfer member is a transparent substrate.
9. The peeling method according to any one of items 1 to 8. 10. The transfer member is made of a material having a glass transition point (Tg) or a softening point equal to or lower than Tmax, where Tmax is a maximum temperature at the time of forming a layer to be transferred. The stripping method according to any one of the above. 11. The transfer body has a glass transition point (Tg).
The peeling method according to any one of claims 3 to 10, wherein the peeling method is made of a material having a softening point of 800 ° C or lower. 12. The method according to claim 3, wherein the transfer body is made of a synthetic resin or a glass material. 13. The peeling method according to claim 1, wherein the substrate has heat resistance. 14. The peeling method according to claim 3, wherein the substrate is made of a material having a strain point equal to or higher than Tmax when a maximum temperature at the time of forming the transferred layer is Tmax. . 15. The peeling method according to claim 1, wherein the separation layer includes at least two layers having different compositions or characteristics. 16. The separation according to claim 1, wherein the separation layer includes a light absorption layer that absorbs the irradiation light, and another layer having a different composition or characteristics from the light absorption layer. Method. 17. The peeling method according to claim 1, wherein the separation layer includes a light absorbing layer that absorbs the irradiation light and a light blocking layer that blocks the irradiation light. 18. The light shielding layer is located on the opposite side of the light absorbing layer from the direction of incidence of the irradiation light.
4. The peeling method according to 1. 19. The peeling method according to claim 17, wherein the light-shielding layer is a reflection layer that reflects the irradiation light. 20. The peeling method according to claim 19, wherein the reflection layer is made of a metal thin film. 21. The peeling method according to claim 16, wherein the peeling of the separation layer is caused by a loss or a decrease in a bonding force between atoms or molecules of a substance constituting the light absorbing layer. . 22. The separation method according to claim 1, wherein the separation layer has a light absorption layer made of amorphous silicon. 23. The stripping method according to claim 22, wherein the amorphous silicon contains H (hydrogen) in an amount of 2 at% or more. 24. The peeling method according to claim 1, wherein the separation layer has a light absorbing layer made of ceramics. 25. The separation method according to claim 1, wherein the separation layer has a light absorption layer made of a metal. 26. The peeling method according to claim 1, wherein the separation layer has a light absorption layer made of an organic polymer material. 27. The organic polymer material comprises —CH—,
_{CH 2 -, - CO -,} - CONH -, - NH -, - CO
At least one of O-, -N = N-, -CH = N-
27. The stripping method according to claim 26, having a kind of bonding. 28. The peeling method according to claim 1, wherein the irradiation light is a laser light. 29. The wavelength of the laser light is 100 to 35.
The method according to claim 28, wherein the thickness is 0 nm. 30. The wavelength of the laser light is from 350 to 12
29. The method according to claim 28, wherein the thickness is 00 nm.