JP2003142666A - Element transfer method, element manufacturing method, integrated circuit, circuit board, electro-optical device, IC card, and electronic equipment - Google Patents

Abstract

(57) Abstract: Provided is a method for manufacturing a semiconductor device capable of directly forming a substrate having excellent flexibility and impact resistance on a semiconductor element by using a peeling transfer technique. Provided is a semiconductor device in which a manufactured semiconductor device does not include an adhesive layer. SOLUTION: A separation layer (2) is formed on an element formation substrate (1), an element formation layer (3) including an electric element is formed on the separation layer, and a bonding layer (4) capable of dissolving the element formation layer is formed. ) To the temporary transfer substrate (5), to separate the element formation layer from the element formation substrate by weakening the bonding force of the separation layer, move this to the temporary transfer substrate (5) side, A curable resin (6) is applied on the element forming layer (3) transferred to (5), and is cured to form a transfer substrate (6) .The bonding layer (4) is dissolved to transfer the transfer substrate ( The temporary transfer substrate (5) is separated from 6). Thereby, a structure in which the transfer substrate is directly formed on the element formation layer (3) is obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device using an inter-substrate transfer technique for thin film elements.

[0002]

2. Description of the Related Art In a semiconductor application device such as a liquid crystal display (LCD) panel and an electroluminescence (EL) display, a plastic substrate is used as a base substrate for reasons such as prevention of deformation due to deformation and dropping and cost reduction. It may be desirable.

However, in manufacturing a thin film transistor used for a panel type display, a high temperature process is used.
Some plastic substrates and circuit elements such as EL elements cannot withstand high temperatures.

Therefore, the applicant manufactures a semiconductor device on a heat-resistant basic substrate by a conventional semiconductor manufacturing technique including a high temperature process, and then peels off the element forming film (layer) on which the semiconductor device is formed from the substrate. , A transfer technique for manufacturing a semiconductor application device by adhering this to a plastic substrate is proposed. For example, JP-A-10-1259
29, JP-A-10-125930, and JP-A-10-1.
No. 25931 describes it in detail as "peeling method" and the like.

[0005]

A semiconductor device manufactured by using the above-mentioned peeling technique includes an element forming layer such as a thin film transistor, an adhesive layer coated with an adhesive, and a plastic substrate. Film thickness is 10-100μ
m, the thickness of the substrate is about 50 to 500 μm, and the thickness of the entire semiconductor device becomes relatively large. Further, the adhesive must be capable of satisfactorily adhering (or joining) both the element forming layer and the substrate. Further, if there is a difference in the coefficient of thermal expansion between the layers containing the adhesive, it may cause warpage or cracks and the heat resistance (reliability) of the semiconductor application device.
Is considered to be lowered.

Therefore, the present invention provides a semiconductor device manufactured by using a technique of peeling a formation layer of an electric element from a heat-resistant substrate and transferring it to another substrate without including an adhesive layer. The purpose is to do.

Another object of the present invention is to make a semiconductor device manufactured by a manufacturing process using a peeling transfer technique thinner.

Another object of the present invention is to make a semiconductor device manufactured by a manufacturing process using a peeling transfer technique a semiconductor device having higher heat resistance.

[0009]

In order to achieve the above object, in the first transfer method of the element of the present invention, the bonding force is weakened when a certain condition is given on the element forming substrate for forming the element. A step of forming a separation layer, a step of forming an element forming layer including an element on the separation layer, and a step of joining the element forming layer to a temporary transfer substrate via a dissolvable joining layer,
A step of separating the element forming layer from the element forming substrate by weakening the bonding force of the separation layer and moving the element forming layer to the temporary transfer substrate side, and a resin on the element forming layer moved to the temporary transfer substrate. Is applied and cured to form a transfer substrate, and the step of dissolving the bonding layer to separate the temporary transfer substrate from the transfer substrate.

With this structure, the transfer substrate and the element forming substrate are bonded to each other and no adhesive layer is included between them, so that the thickness of the semiconductor device can be reduced. In addition, conventional element formation layers (thin film transistors, etc.),
Since the three-layer structure of the adhesive layer (adhesive) and transfer substrate (plastic substrate) becomes a two-layer structure (element formation layer, transfer substrate), it is easy to match the thermal expansion coefficient of each layer, and it is possible to reduce warpage and cracks. Becomes

The second transfer method of the element of the present invention is
On the element formation substrate for forming the element, a step of forming a separation layer whose binding force is weakened when a certain condition is given, and a step of forming an element formation layer including an element on the separation layer,
A step of applying a resin on the element forming layer and curing the resin to form a transfer substrate; and peeling the element forming substrate from the element forming layer by weakening the bonding force of the separation layer. Is moved to the transfer substrate side.

With this structure also, since the transfer substrate and the element forming substrate are joined and no adhesive layer is included between the two, the semiconductor device can be formed thin. In this case, it becomes possible to transfer the element forming layer with fewer steps.

The present invention further includes a step of forming a contact hole in the element forming layer to form a wiring layer or an electrode layer, whereby elements and wirings / electrodes are provided in the inverted element forming layer. It can be included.

In the present invention, "element" means T
Including FT, diode, resistor, inductor, capacitor, and other single element whether active element or passive element,
There is no limitation on its configuration, shape, or size.

In the present invention, the term "separation layer" preferably means that the separation layer loses or reduces the bonding force between atoms or molecules upon irradiation with light such as a laser beam.
It is a peeling layer that causes peeling (ablation), and is made of a material that causes such peeling.

[0016] Preferably, the separation layer is one or more materials selected from the group consisting of amorphous silicon, silicon nitride, and metal, and may be a multilayer film which is a combination thereof. As a result, peeling in the separation layer,
It facilitates peeling at the boundary between the separation layer and the adjacent layer. For example, silicon nitride contains nitrogen, and when irradiated with light, the nitrogen is separated and the bonding force between molecules becomes weak.

Preferably, the separation layer also contains hydrogen. As a result, when irradiated with light, hydrogen is separated (gasified), and the bonding force between molecules becomes weak.

Preferably, the bonding layer is a liquid dissolving adhesive, for example, a water-soluble adhesive, which is eluted by washing with water.

The present invention is also an element manufacturing method including the steps of the element transfer method. It is also an integrated circuit manufactured by the transfer method.

In the present invention, the term "integrated circuit" means a circuit in which elements and other wirings are integrated so as to have a certain function. The "integrated circuit" is, for example, a plurality of active elements (thin film transistors, etc.) and passive elements (resistors, capacitors, etc.) formed on the same substrate (finally, a transfer substrate in the present invention) by a chemical method such as ion implantation, diffusion, and photo etching. A small-scale integrated circuit (NANDO circuit, NOR circuit, etc.) depending on the degree of integration,
It can be classified into a medium-scale integrated circuit (counter, register circuit, etc.) and a large-scale integrated circuit (memory, microprocessor, DSP, etc.).

The present invention is also a circuit board manufactured by the above-mentioned element transfer method. For example, it may be a circuit substrate manufactured by the above-mentioned transfer method, in which elements are arranged on a plurality of pixel electrodes arranged two-dimensionally, for example, an active matrix substrate.

The present invention is also an electro-optical device including the circuit board.

Here, the "electro-optical device" refers to a general device provided with an electro-optical element that emits light by an electric action or changes the state of light from the outside, which emits light by itself and from the outside. Includes both those that control the passage of light. For example, as an electro-optical element, a liquid crystal element, an electrophoretic element, an EL (electroluminescence) element, an active matrix type display device having an electron emitting element that emits light by applying electrons generated by application of an electric field to a light emitting plate, etc. Say. However, it is not limited to these devices.

The present invention also relates to an electronic device manufactured by the above-mentioned element transfer method.

Here, the "electronic device" refers to a general device that performs a certain function by combining a plurality of elements or circuits, and is configured to include, for example, an electro-optical device and a memory. Although the configuration is not particularly limited, for example, an IC card, a mobile phone, a video camera, a personal computer, a head mounted display, a rear type or front type projector, a fax machine with a display function, a viewfinder of a digital camera, a portable TV. , DS
It includes a P device, a PDA, an electronic notebook, an electronic bulletin board, and a display for advertisement.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described below with reference to the drawings. (First Embodiment) In the first embodiment of the present invention, an element forming layer is bonded to a temporary transfer substrate via a soluble bonding layer, and a resin is applied to the element forming layer moved to the temporary transfer substrate. Is applied to form a transfer substrate, and the bonded bonding layer is melted to separate the temporary transfer substrate from the transfer substrate. That is, the present invention relates to a method of forming a transfer substrate, which is a final substrate after the transfer, and then removing the substrate or the like that was primarily transferred.

FIGS. 1 (a) to 1 (e) show a manufacturing process (process) of the element according to the first embodiment of the present invention.

First, as shown in FIG. 1A, for example,
A translucent heat-resistant substrate 1 such as quartz glass that can withstand about 1000 ° C. is used as an element formation substrate.

Here, it is preferable that the element forming substrate 1 has a light transmitting property capable of transmitting light. Accordingly, the peeling layer can be irradiated with light through the substrate, and the peeling layer can be peeled quickly and accurately by light irradiation. In this case, the light transmittance is preferably 10% or more, more preferably 50% or more. This is because the higher the transmittance, the smaller the light attenuation (loss), and the smaller the amount of light required for peeling the peeling layer 2.

The substrate 1 is preferably made of a highly reliable material, particularly preferably a material having excellent heat resistance. The reason is that, for example, when forming an element forming layer or an intermediate layer to be described later, the process temperature may become high (for example, about 350 to 1000 ° C.) depending on the type and forming method, but even in that case, the element forming This is because if the substrate 1 is excellent in heat resistance, the range of setting of film forming conditions such as temperature conditions when forming the element forming layer or the like on the substrate 1 is widened. As a result, when a large number of elements and circuits are manufactured on the element formation substrate, desired high temperature processing can be performed, and highly reliable and high performance elements and circuits can be manufactured.

Therefore, the element formation substrate 1 is composed of the element formation layer 2
When the maximum temperature during the formation of Tmax is Tmax, the strain point is Tmax
Those composed of the above materials are preferable. Specifically, the constituent material of the element formation substrate 1 preferably has a strain point of 350 ° C. or higher, more preferably 500 ° C. or higher. Examples of such a material include heat-resistant glass such as quartz glass, Corning 7059, and Nippon Electric Glass OA-2.

The thickness of the element forming substrate 1 is not particularly limited, but normally it is preferably about 0.1 to 5.0 mm, more preferably about 0.5 to 1.5 mm. . If the thickness of the substrate 1 is thicker, the strength is further increased, and if it is thinner, the transmittance of the substrate 1 is low,
This is because light is less likely to be attenuated. When the light transmittance of the element formation substrate 1 is high, its thickness is
It may exceed the upper limit value.

It is preferable that the element forming substrate 1 has a uniform thickness so that the light can be uniformly irradiated.

As described above, the element forming substrate has various conditions, but since it can be repeatedly used, it is possible to suppress increase in manufacturing cost by repeated use even if a relatively expensive material is used. Is.

That is, since the element formation substrate does not become a part of the final product, it is possible to select a suitable one for element formation without being restricted by the strength, thickness, weight and cost of the final product. Of.

For the peeling layer 2, a material is selected which causes peeling (also referred to as "intra-layer peeling" or "interfacial peeling") in the layer or at the interface by irradiation light such as laser light. That is, by irradiating with light of a certain intensity, the interatomic or intermolecular binding force in the atoms or molecules constituting the constituent substance disappears or decreases, and ablation (ablat
ion) and the like to cause peeling. Further, the irradiation of the irradiation light may release the gas from the peeling layer 2 to cause separation. In some cases, the component contained in the peeling layer 2 is released as a gas to be separated, and in other cases, the peeling layer 2 absorbs light to become a gas and its vapor is discharged to be separated.

Examples of the composition of the peeling layer 2 include those described in A to E below. A. Amorphous Silicon (a-Si) This amorphous silicon may contain hydrogen (H). In this case, the H content is preferably about 2 atomic% or more, and more preferably about 2 to 20 atomic%. As described above, when a predetermined amount of hydrogen (H) is contained, the hydrogen is released by the irradiation of light, and an internal pressure is generated in the peeling layer 2, which serves as a force for peeling the upper and lower thin films. The content of hydrogen (H) in the amorphous silicon is adjusted by appropriately setting film forming conditions such as gas composition in CVD, gas pressure, gas atmosphere, gas flow rate, temperature, substrate temperature, and input power. be able to. Amorphous silicon has good light absorption, and
Film formation is easy and highly practical. Therefore, when the peeling layer is made of amorphous silicon, the peeling layer that causes accurate peeling by light irradiation can be formed at low cost. B. As various oxide ceramics such as silicon oxide or silicic acid compound, titanium oxide or titanic acid compound, zirconium oxide or zirconic acid compound, lanthanum oxide or lanthanum oxide compound, electric conductor (ferroelectric substance) or semiconductor silicon oxide, SiO , SiO ₂ , and Si ₃ O ₂ , and examples of the silicic acid compound include K ₂ Si.
O ₃ , Li ₂ SiO ₃ , CaSiO ₃ , ZrSiO ₄ , Na
₂ SiO ₃ may be mentioned.

As titanium oxide, TiO, Ti
_TwoO₃, TiO_TwoAs the titanic acid compound,
Is, for example, BaTiO 3._Four, BaTiO₃, Ba_TwoTi₉
O₂₀, BaTi_FiveO_Two, CaTiO₃, SrTiO₃, P
bTiO₃, MgTiO₃, ZrTiO _Two, SnTi
O_Four, Al_TwoTiO_Five, FeTiO₃Is mentioned.

Examples of zirconium oxide include ZrO ₂ , and examples of zirconate compounds include BaZrO 2.
₃ , ZrSiO ₄ , PbZrO ₃ , MgZrO ₃ , K ₂ Zr
O ₃ may be mentioned.

Further, it is preferable to be composed of silicon containing nitrogen. This is because when nitrogen-containing silicon is used for the peeling layer, nitrogen is released with the irradiation of light, which promotes peeling in the peeling layer. C. Ceramics such as PZT, PLZT, PLLZT, PBZT or dielectrics (ferroelectric) D. Nitride ceramics such as silicon nitride, aluminum nitride and titanium nitride E. Organic Polymer Material As the organic polymer material, --CH
-, -CO- (ketone), -CONH- (amide),-
NH- (imide), -COO- (ester), -N = N
Any one having a bond such as-(azo) or -CH = N- (Schiff) (these bonds are cleaved by irradiation with light), particularly any one having many such bonds may be used. The organic polymer material may have an aromatic hydrocarbon (one or more benzene rings or condensed rings thereof) in the constitutional formula.

Specific examples of such organic polymer materials include polyolefins such as polyethylene and polypropylene, polyimides, polyamides, polyesters, polymethylmethacrylate (PMMA), polyphenylene sulfide (PPS), polyether sulfone (PE).
S), epoxy resin and the like. F. As the metal, for example, Al, Li, Ti, Mn, I
Examples thereof include n, Sn, Y, La, Ce, Nd, Pr, Gd, Sm, or an alloy containing at least one of these.

In addition, the peeling layer may be made of a hydrogen-containing alloy. This is because when a hydrogen-containing alloy is used for the peeling layer, hydrogen is released with the irradiation of light, which promotes peeling in the peeling layer.

Further, the peeling layer may be made of a nitrogen-containing alloy. This is because when a nitrogen-containing alloy is used for the peeling layer, nitrogen is released with the irradiation of light, and this promotes peeling in the peeling layer.

Further, the peeling layer may be composed of a multilayer film. The multi-layer film can be made of, for example, an amorphous silicon film and a metal film formed thereon. The material for the multilayer film may be composed of at least one of the above-mentioned ceramics, metals, and organic polymer materials. When the peeling layer is formed as a multi-layered film or a film formed by combining different kinds of materials as described above, the peeling in the separation layer is promoted by the release of hydrogen gas or nitrogen gas accompanying light irradiation, as in the case of amorphous silicon. .

The thickness of the peeling layer 2 varies depending on various conditions such as the purpose of peeling, the composition of the peeling layer 2, the layer structure, and the forming method, but it is usually preferably about 1 nm to 20 μm.
More preferably, it is about 40 nm
More preferably, it is about 1 μm. The larger the film thickness of the peeling layer 2, the more uniform the film formation and the less likely the unevenness of peeling occurs. On the other hand, the thinner the film thickness, the light power for ensuring good peeling property of the peeling layer 2. This is because the (light amount) can be small and the time required for the work when the peeling layer 2 is later removed becomes shorter. The thickness of the peeling layer 2 is preferably as uniform as possible.

The peeling layer 2 can be formed by any method as long as it can form the peeling layer 2 with a uniform thickness.
It is appropriately selected according to various conditions such as film composition and film thickness. For example, CVD (MOCVD, low pressure CVD, ECR-CV
(Including D), vapor deposition, molecular beam deposition (MB), sputtering, ion plating, various vapor deposition methods such as PVD, electroplating, immersion plating (dipping), various plating methods such as electroless plating, Langmuir. Examples of the method include a coating method such as a projet (LB) method, spin coating, spray coating, and roll coating, various printing methods, a transfer method, an inkjet coating method, a powder jet method, and the like, and two or more of these are formed in combination. You can also

For example, when the composition of the release layer 2 is amorphous silicon (a-Si), CVD, especially low pressure CV
It is preferable to form the film by D or plasma CVD.

When the peeling layer 2 is made of ceramics by the sol-gel method, or when it is made of an organic polymer material, it is preferable to form a film by a coating method, particularly spin coating.

Although not shown in FIG. 1A, an intermediate layer for the purpose of improving the adhesiveness between the element forming substrate 1 and the peeling layer 2 is formed according to the properties of the element forming substrate 1 and the peeling layer 2. It may be provided between. This intermediate layer prevents migration of components to or from a protective layer, an insulating layer, a transfer layer that physically or chemically protects the transfer layer during manufacture or use. It has at least one of the functions of a barrier layer and a reflective layer.

The composition of the intermediate layer can be appropriately selected according to the purpose. For example, in the case of the intermediate layer formed between the peeling layer made of amorphous silicon and the transferred layer, silicon oxide such as SiO 2 may be used. Further, as the composition of the other intermediate layer, for example, Pt, Au, W, Ta,
Examples thereof include metals such as Mo, Al, Cr, Ti or alloys containing these as main components.

The thickness of the intermediate layer is appropriately determined according to the purpose of forming it. Usually, the thickness is preferably about 10 nm to 5 μm, more preferably about 40 nm to 1 μm. The larger the thickness of the intermediate layer, the more uniform the film is formed and the less likely the adhesiveness becomes uneven. On the other hand, the smaller the film thickness, the less the light to be transmitted to the release layer is attenuated. is there.

As the method for forming the intermediate layer, various methods described for the peeling layer 2 can be applied. The intermediate layer may be formed of a single layer, or may be formed of two or more layers using a plurality of materials having the same or different compositions.

Next, an element forming layer 3 including elements is formed on the peeling layer 2. The element forming layer 3 includes a circuit including an active element such as a TFT, a passive element, or a combination thereof. That is, what is formed in the element forming layer 3 is an individual element or a chip having an independent function such as an integrated circuit, and does not have an independent function between the two, but is different from other elements or circuits. It may be a part of a circuit that functions independently by combining them. Therefore, its structure and size are not limited.

Particularly, in the present invention, it is preferable to form an integrated circuit composed of a plurality of thin film elements on the element forming layer 3. A high temperature process is required for manufacturing a thin film element, and the base material for forming the thin film element is the element forming substrate 1.
It is necessary to satisfy various conditions such as. On the other hand, it is considered that the final transfer substrate to be commercialized is, for example, a flexible substrate having flexibility. As described above, in the production of the thin film element, the requirements required for the final substrate and the requirements required for the substrate for producing the thin film element may conflict with each other, but if the element transfer method of the present invention is applied, the production conditions are It is possible to manufacture a thin film element on a substrate that satisfies the requirements and then transfer the thin film element to a transfer substrate that does not satisfy the manufacturing conditions.

As an example of such a thin film element, in addition to a TFT, for example, a thin film diode, a photoelectric conversion element (photo sensor, solar cell) made of a PIN junction of silicon, a silicon resistance element, other thin film semiconductor devices, Electrodes (eg, ITO, transparent electrodes such as mesa film), switching elements, memory, actuators such as piezoelectric elements, micro mirrors (piezo thin film ceramics), magnetic recording thin film heads, coils, inductors, resistors, capacitors, thin film high transparency There are magnetic materials and micro magnetic devices combining them, filters, reflective films, dichroic mirrors, and the like.

In the present embodiment, the element forming layer 3 is formed including the thin film transistor. That is, as shown in FIG. 1A, the element forming layer 3 includes an insulating layer 31 such as a silicon oxide film, a silicon layer 32 including source / drain regions doped with impurities, and a gate insulating film 3.
3, a gate wiring film 34, an interlayer insulating film 35, a source / drain wiring film 36, and the like.

FIG. 3 shows a method of manufacturing the element formation layer 3
A method for manufacturing the thin film transistor T will be illustrated.

First, as shown in FIG. 3A, a SiO ₂ film is deposited on the element forming substrate 1 to form an insulating layer 31 as a base layer. A known method for forming the SiO ₂ film is, for example, a plasma chemical vapor deposition method (PECVD).
Method), a low pressure chemical vapor deposition method (LPCVD method), and a vapor deposition method such as a sputtering method. For example, PEC
The insulating layer 31 having a thickness of 1 μm is formed by using the VD method. Then, a known method, for example, the LPCVD method is applied to form the silicon layer 32. This silicon layer 32
Is patterned to form a semiconductor region of the thin film transistor.

Next, as shown in FIG. 3B, SiO ₂
A gate insulating film 33 such as a predetermined manufacturing method, for example, electron cyclotron resonance PECVD method (ECR-CVD method),
It is formed by the parallel plate PECVD method or the LPCVD method.

Next, as shown in FIG.
Metals, such as tantalum or aluminum
After forming the thin film by the sputtering method, the patterning
Then, the gate wiring film 34 is formed. So
Then, using the gate wiring film 34 as a mask, the donor or
Implants impurity ions that serve as acceptors,
A source / drain region on the doped silicon layer 32;
The channel region is self-aligned with the gate wiring film 34.
To make. For example, make an NMOS transistor
In order to do so, phosphorus (P) as an impurity element has a predetermined concentration,
For example, 1 × 10 ¹⁶cm^-2Source / drain with concentration
Type in the area. Then apply appropriate energy, eg
For example, XeCl excimer laser irradiation energy density 20
0 to 400 mJ / cm^TwoIrradiate at about 250 ℃
Impure by heat treatment at a temperature of about 450 to 450 ° C
Activates physical elements.

Next, as shown in FIG. 3D, SiO ₂ of about 500 nm is formed on the upper surfaces of the gate insulating film 33 and the gate wiring film 34 by a predetermined method such as PECVD.
And the like to form the interlayer insulating film 35. Next, the contact holes reaching the source / drain regions are formed with insulating films 33 and 35.
Then, aluminum or the like is deposited on the contact holes and the peripheral portions of the contact holes by a predetermined method, for example, a sputtering method to form the wiring film 36 and patterning.

Although the thin film transistor T can be formed on the element forming layer 3 through the above steps, the method of forming such an element can be variously applied by applying a known technique.

Although the SiO ₂ film is used as the insulating layer 31 which is a base layer provided in contact with the peeling layer 2, other insulating films such as Si ₃ N ₄ may be used. The thickness of the insulating layer 31 is appropriately determined according to the purpose of formation and the degree of function that can be exerted, but is usually 1
It is preferably about 0 nm to 5 μm, and 40 nm to 1
More preferably, it is about μm. This insulating layer 31 is
It may be formed for various purposes, for example, it may be formed so as to serve as the intermediate layer. That is, of the functions of a protective layer that physically or chemically protects the element formed in the element forming layer 3, an insulating layer, a conductive layer, a laser light shielding layer, a migration preventing barrier layer, and a reflecting layer. To perform at least one function,
An insulating layer can also be formed.

If the element forming layer is decomposed or the performance is deteriorated even after the peeling layer is separated, such an insulating layer 31 is not formed and the insulating layer 31 is directly formed on the peeling layer 2. Elements may be formed.

Next, as shown in FIG. 1B, a soluble adhesive such as a water-soluble adhesive is applied on the element forming layer 3 to form an adhesive film 4.

Examples of the adhesive for the adhesive film 4 include liquid-soluble adhesives, and water-soluble adhesives are particularly preferable. Suitable examples of such an adhesive are appropriately selected from adhesives that can be relatively easily dissolved in any solvent such as water, alcohol, acetone, ethyl acetate, toluene, etc., and can peel off an adhesive. It can be used, for example, polyvinyl alcohol type, aqueous vinyl urethane type, acrylic type,
Many organic solvent-soluble adhesives such as polyvinylpyrrolidone, alpha-olefin, maleic acid-based, water-soluble adhesives such as photocurable adhesives, acrylic adhesives, epoxy adhesives, silicone adhesives, etc. can be mentioned. .

In the present embodiment, the adhesive for forming the adhesive film 4 is used only on the element forming layer 3 as a temporary transfer substrate 5.
Applied to only one or both.

As a method for forming this adhesive film, a method such as a spin coating method, an ink jet coating method using an ink jet type thin film forming apparatus described later, or a printing method can be used.

Next, the temporary transfer substrate 5 is placed on this, and the element formation substrate 1 (the element formation layer 3 thereof) and the temporary transfer substrate 5 are placed.
And stick together. As the temporary transfer substrate 5, for example, the glass substrate described above can be used.

Next, as shown in FIG. 1C, the entire surface is irradiated with laser light from the first substrate side 1. This causes ablation in the peeling layer 2, and
The gas contained in the peeling layer 2 is released, and further, a phase change such as melting and evaporation occurs immediately after irradiation, and the element forming substrate side 1 and the element forming layer 3 are peeled off. As a result, the element forming layer 3 is transferred to the temporary transfer substrate 5.

Here, the ablation means that the fixing material (the constituent material of the peeling layer 2) that absorbs the irradiation light is photochemically or thermally excited, and the bonds of atoms or molecules on the surface or inside thereof are cut and released. The release layer 2
All or part of the constituent materials of the above appears as a phenomenon that causes a phase change such as melting and evaporation (vaporization). In addition, the phase change may cause a minute foaming state, resulting in a decrease in binding force.

Whether the peeling layer 2 causes intralayer peeling, interfacial peeling, or both depends on the composition of the peeling layer 2 and various other factors. One of the factors is as follows. Examples include conditions such as the type of light to be irradiated, wavelength, intensity, and reach depth.

The light to be irradiated may be any light as long as it causes intra-layer peeling and / or interfacial peeling in the peeling layer 2, and examples thereof include X-rays, ultraviolet rays, visible light, infrared rays (heat rays) and laser light. , Millimeter waves, microwaves, electron beams, radiation (α rays, β rays, γ rays) and the like.

Of these, laser light is preferable because it facilitates the exfoliation (ablation) of the exfoliation layer 2 and enables highly accurate local irradiation. The laser light is coherent light, and is suitable for irradiating the peeling layer with high-power pulsed light through the element formation substrate 1 to cause peeling at a desired portion with high accuracy. Therefore, the element forming layer 3 can be easily and surely peeled off by using the laser beam.

Various gas lasers, solid-state lasers (semiconductor lasers) and the like can be mentioned as the laser device for generating this laser beam. Excimer laser, Nd-YAG laser, Ar laser, CO ₂ laser, CO laser, He- N
An e-laser or the like is preferably used.

This laser light has a wavelength of 100 nm.
Laser light having ˜350 nm is preferred. By using the short-wavelength laser light as described above, the light irradiation accuracy can be improved and the peeling in the peeling layer 2 can be effectively performed.

As the laser light satisfying the above conditions,
For example, an excimer laser can be mentioned. The excimer laser is a gas laser capable of outputting high-energy laser light in the short wavelength ultraviolet region, and uses a rare gas (Ar, Kr, Xe, etc.) and a halogen gas (F) as a laser medium.
₂ and HCl, etc., can be used to output laser light of four typical wavelengths (XeF = 351 nm, XeCl = 308 n).
m, KrF = 248 nm, ArF = 193 nm). Since the excimer laser outputs high energy in a short wavelength range, it can ablate the peeling layer 2 in an extremely short time, and thus the temperature of the adjacent temporary transfer substrate 5, element formation substrate 1, etc. almost rises. Without letting
The element forming layer 3 can be peeled off without causing deterioration or damage to the element or the like.

Alternatively, for the release layer 2, for example, gas release,
When giving a separation characteristic by causing a phase change such as vaporization or sublimation, the wavelength of the irradiated laser light is 350 to 120.
About 0 nm is preferable.

Laser light having such a wavelength is generated by YAG,
A laser light source or an irradiation device widely used in general processing fields such as a gas laser can be used, and light irradiation can be performed easily at low cost. Further, by using the laser light having the wavelength in the visible light region, it is sufficient that the element formation substrate 1 is transparent to visible light, and the degree of freedom in selecting the element formation substrate 1 can be expanded.

Further, the energy density of the irradiated laser light, especially the energy density in the case of the excimer laser, is
It is preferably about 10 to 5000 mJ / cm ² ,
More preferably, it is set to about 100 to 500 mJ / cm ² . The irradiation time is preferably about 1 to 1000 nsec, more preferably about 10 to 100 nsec. The higher the energy density or the longer the irradiation time, the more likely it is that ablation will occur.
This is because the lower the energy density or the shorter the irradiation time, the less the possibility that the irradiation light transmitted through the peeling layer 2 may adversely affect the element or the like.

Irradiation light typified by laser light is preferably irradiated so that its intensity becomes uniform. The irradiation direction of the irradiation light is not limited to the direction perpendicular to the peeling layer 2, and may be the direction inclined with respect to the peeling layer 2 by a predetermined angle.

When the area of the peeling layer 2 is larger than the irradiation area of the irradiation light at one time,
It is also possible to irradiate the irradiation light in multiple times. Also,
Irradiation may be performed twice or more on the same location. Further, irradiation light (laser light) of different types and different wavelengths (wavelength ranges) may be applied to the same region or different regions two or more times.

As a measure against the adverse effect of the irradiation light transmitted through the peeling layer 2 reaching the element, for example, a method of forming the above-mentioned intermediate layer such as tantalum (Ta) on the peeling layer 2 is used. is there. Alternatively, the insulating film 31 that is a base of the element formation layer may be formed so as to function as an intermediate layer. As a result, the laser light that has passed through the peeling layer 2 is completely reflected at the interface of the metal film and does not adversely affect the elements above it.

On the back side of the peeled element forming layer 3,
The peeling residue of the peeling layer 2 may adhere, and it is desirable to completely remove it. Releasing release layer 2
The method for removing the above can be appropriately selected and used from methods such as cleaning, etching, ashing, and polishing, or a combination thereof. Further, the peeling layer 2 attached to the surface of the substrate 1 separated from the element forming layer 3 can also be removed by a method similar to this, whereby the element forming substrate 1 can be reused (recycled). it can.

Next, as shown in FIG. 1D, a liquid resin material is uniformly applied to the entire surface of the element forming layer 3 on the base side,
The resin substrate 6 is formed by an appropriate method according to the resin material, for example, thermosetting, photo-curing, leaving and curing.

As the resin material, a polyolefin resin (polyethylene, polypropylene, EVA, etc.),
It is possible to use one kind or a mixture of two or more kinds of epoxy resin, fluorine resin, hot-melt resin such as carboxyl group-containing acrylic resin, polyester resin, acrylate resin, silicone resin and the like. The application of the resin is appropriately selected from various methods such as spin coating, roll coating, and spraying.

The material of the resin substrate 6 is not particularly limited, but may be inferior to the substrate 1 in characteristics such as heat resistance and corrosion resistance. This is because the resin substrate 6 is provided after the formation of the element that requires high heat, and does not depend on the temperature conditions or the like when the element formation layer 3 is formed.

Therefore, when the maximum temperature during the formation of the element forming layer 3 is Tmax, a material having a phase transition point (Tg) or a softening point of Tmax or less can be used as a constituent material of the resin substrate 6. For example, the resin substrate 6 has a phase transition point (Tg) or softening point of preferably 800 ° C. or lower, more preferably 500 ° C. or lower, and further preferably 3 ° C.
It can be composed of a material having a temperature of 20 ° C. or less.

As described above, since there is no restriction on the use of the material for the resin substrate 6 depending on the temperature, the range of material selection is wide and, for example, the thermal expansion of the element forming layer and the resin substrate can be easily matched. Therefore, it is possible to form a structure that is unlikely to warp or crack due to heat generation, and to improve heat resistance.

The resin substrate 6 is preferably formed so as to have a certain degree of rigidity (strength) as mechanical characteristics, but it may have some flexibility and elasticity. By using such a flexible resin substrate, excellent characteristics that cannot be obtained with a glass substrate having high rigidity can be realized. Therefore, in the present invention, by using, for example, an electro-optical device by using a flexible final substrate, it is possible to realize an electro-optical device which is supple, light and strong against a drop impact.

As a material for forming such a resin substrate 6, various synthetic resins are preferable. The synthetic resin may be either a thermoplastic resin or a thermosetting resin, and examples thereof include polyolefins such as polyethylene, polypropylene, ethylene-prepylene copolymer, ethylene-vinyl acetate copolymer (EVA), cyclic polyolefins, and modified polyolefins. Polyolefin, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, polyimide, polyamideimide, polycarbonate, poly- (4-methylpentene-1),
Ionomer, acrylic resin, polymethylmethacrylate, acrylic-styrene copolymer (AS resin), butadiene-styrene copolymer, polio copolymer (EVO
H), polyethylene terephthalate (PET), polyptyrene terephthalate (PBT), polycyclohexane terephthalate (PCT) and other polyesters, polyethers, polyether ketones (PEK), polyether ether ketones (PEEK), polyether imides, polyacetals (polyacetals). POM), polyphenylene oxide, modified polyphenylene oxide, polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluorine-based resin, styrene-based, polyolefin-based, polyvinyl chloride-based, polyurethane-based, fluorine-based Various thermoplastic elastomers such as rubber type and chlorinated polyethylene type, epoxy resin, phenol resin, urea resin, melamine resin, unsaturated polyester,
Examples thereof include silicone resins, polyurethanes, and copolymers, blends, and polymer alloys containing these as a main component, and one or more of these are used in combination (for example, as a laminate of two or more layers). be able to.

Examples of the glass material include silicate glass (quartz glass), alkali silicate glass, soda lime glass, potassium lime glass, lead (alkali) glass, barium glass and borosilicate glass. Of these, those other than silicate glass are preferable because they have a lower melting point than silicate glass, are relatively easy to mold and process, and are inexpensive.

Since the final substrate is made of resin, various advantages such as low material cost and low manufacturing cost can be enjoyed. Therefore, the use of such a synthetic resin is advantageous in manufacturing a large-sized and inexpensive device (for example, a liquid crystal display).

However, other materials can be used as long as they have the same molding easiness and cost merit as the synthetic resin.

The thickness of the resin substrate 6 is selected according to the strength of the resin after curing, the thickness of the element forming layer 3 to be transferred, the area, the strength, etc., but is, for example, 50 μm to 100 μm.
It is preferably about 0 μm, and 100 μm to 400
More preferably, it is about μm. This is because as the resin substrate is thicker, one of the advantages of the present invention that the adhesive layer is eliminated to reduce the thickness of the final product as a whole is reduced, and as the resin substrate is thinner, the strength of the final product cannot be ensured.

As the resin substrate 6, it is preferable to use an adhesive sheet in which a resin material is continuously formed in an appropriate shape on a flexible film. This is because the adhesive sheet can be continuously supplied, which simplifies the procedure and improves manufacturing efficiency.

Next, as shown in FIG. 1E, the adhesive film 4
Is dissolved in a solvent (water or organic solvent) suitable for the property of the adhesive such as washing with water, and the temporary transfer substrate 5 is separated from the element forming layer 3.

Through the above steps, a curable resin is applied to the element forming layer formation 3 to form the transfer substrate 6, and the semiconductor device can be formed on the plastic resin substrate 6 having a relatively low heat resistance temperature. Such a semiconductor device manufacturing process is convenient when applied to a manufacturing process of a liquid crystal display or an EL panel.

That is, according to the first embodiment of the present invention, unlike the conventional device, since the adhesive layer is not provided between the transfer substrate and the element forming layer, the thickness of the semiconductor device is reduced. The material of the resin substrate, which is the base substrate of the element forming layer, may be selected in consideration of the adhesivity with the element forming layer, etc., and there is more room for material selection, and thermal expansion and the like can be easily matched. In the final product that matches the conditions such as the coefficient of thermal expansion, warpage and cracks due to heat generation are unlikely to occur, and the heat resistance is improved.

In particular, according to the first embodiment, when the present invention is applied to the case where the substrate area must be increased as in the case where the final product is a large-sized display device, the active matrix having a large area can be used. A thin resin substrate is used for the final product while the pixel circuit of the substrate is manufactured on a relatively thick and sturdy element formation substrate. That is, it is possible to satisfy both contradictory requirements at the time of manufacturing and on the product, such that a thin product can be finally manufactured while performing stable manufacturing without causing a crack or a defective portion in the element formation layer. .

Further, in the conventional transfer method, the final substrate is separately attached with an adhesive or the like. According to the first embodiment, however, the layer formed of resin is finally used as a substrate for supporting the entire circuit. Since it has been decided to use it, it is possible to produce much thinner final products by conventional transfer methods.

(Second Embodiment) According to the second embodiment of the present invention, a resin is applied on the element forming layer and cured to form a transfer substrate, and the original substrate is removed. Second
Transfer method. In particular, this is a transfer method that eliminates the need to attach the transfer destination substrate.

FIGS. 2 (a) to 2 (e) show a manufacturing process (process) of the element and the circuit board according to the second embodiment of the present invention. The parts corresponding to those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted. In the second embodiment, the use of the temporary transfer substrate 5 is omitted, and the number of transfers is one.

First, as shown in FIG. 2A, a peeling layer 2 is formed on a heat resistant element forming substrate 1 such as quartz. As described above, the peeling layer 2 has a property of peeling due to separation inside when it is irradiated with heat or light. The separation film 2 is as described in the first embodiment, and for example, amorphous silicon (a-Si) containing hydrogen can be used.

On the peeling layer 2, an element forming layer 3 in which electric elements such as thin film transistors are formed is formed. The element forming layer 3 is as described in the first embodiment, and for example, the insulating layer 3 such as a silicon oxide film.
1. A silicon layer including source / drain regions doped with impurities, a gate insulating film 33, a gate wiring film 34, an interlayer insulating film 35, a source / drain wiring film 36, and the like.

Next, as shown in FIG. 2B, a liquid heat or photocurable resin material is uniformly applied to the entire surface of the element forming layer 3 and cured by an appropriate method depending on the resin material. Then, the resin substrate 6 is formed. The resin material is as described in the first embodiment, and various resins such as acrylic resin and silicon resin can be used, and are appropriately selected. The application of the resin is appropriately selected from various methods such as spin coating, roll coating and spraying. The resin can be cured by irradiation with light or heat.

The conditions for the mechanical strength and the thickness of the resin substrate 6 can be considered as in the first embodiment.

Next, as shown in FIG. 2C, the entire surface of the device forming substrate 1 is irradiated with, for example, a laser beam, and the hydrogen in the peeling layer 2 is molecularized and separated from the crystal bonds to form the device. The formation substrate side 1 and the element formation layer 3 are separated. As a result, the element forming layer 3 is transferred to the transfer substrate 6. The irradiation of laser light is as described in the first embodiment, and for example, an excimer laser is used.

Next, as shown in FIG. 2D, the insulating film 31 on the base side of the element forming layer 3 is patterned to form, for example, 2
A contact hole with a diameter of about 0 to 30 μm is opened.
For the patterning, photolithography, an ink jet method, a dropping of an etching solution, laser etching, or the like can be applied.

Next, as shown in FIG. 2E, an arbitrary wiring or electrode, for example, an IT of a transparent electrode is provided on the back side of the element forming layer 3.
O7 is laminated and patterned to form pixel electrodes, terminal electrodes and the like. Such a circuit board is used as an electro-optical device such as a liquid crystal display or an EL display.

As described above, according to the second embodiment,
In addition to the effect similar to that of the first embodiment, the element forming layer 3 such as an electronic circuit is transferred and formed on the resin substrate 6 without the step of using the temporary transfer substrate 5.

The wiring on the back side of the element forming layer in FIGS. 2D and 2E is not essential, and the contact hole and the wiring may not be present.

In particular, according to the second embodiment, since the layer that was only the adhesive layer in the conventional transfer method is finally used as the substrate for supporting the entire circuit, the conventional transfer method is used. It is possible to produce significantly thinner end products.

(Third Embodiment) The third embodiment is an integrated circuit manufactured by the transfer method according to each of the above embodiments, and is a circuit board.

The integrated circuit according to the present embodiment relates to a static RAM which is an LSI formed by the device transfer method according to the present invention. FIG. 4A is a plan view of the integrated circuit according to the present embodiment, and FIG. 4B is a partial view taken along the line AA of FIG. 4A when the first embodiment is applied. An enlarged cross-sectional view and a partially enlarged cross-sectional view when the second embodiment is applied are shown in (c).

As shown in FIG. 4A, the integrated circuit 1
00 is the memory cell array 101 and the address buffer 1
02, a row decoder 103, a word driver 104, an address buffer 105, a column decoder 106, a column selection switch 107, an input / output circuit 108, and a control circuit 109. A circuit centered on the thin film transistor is formed in each block, and a wiring is formed between the blocks by patterning a metal layer.

FIG. 4B is a sectional view showing a case where the integrated circuit 100 is manufactured by applying the first embodiment, that is, the p-type MOS transistor Tp and the n-type MOS.
It shows the vicinity where the transistor Tn is formed. As shown in the sectional view, a resin substrate 6 is formed below the element forming layer 3. The element forming layer 3 includes a silicon layer 200 as a base, a wiring layer 201 having a layered structure of a large number of elements and wirings, a protective layer 202 for protecting the upper surface, and the like.

In the wiring layer 201, a well region 210, a semiconductor region 211 into which impurities are introduced to form a source or a drain, a gate insulating film 212, and a gate wiring film 21.
3, the interlayer insulating film 214, the metal wiring layer 215, etc. form a circuit. Such a layer structure can be formed by a procedure similar to that of forming the thin film transistor in the first embodiment.

The protective layer 202 is a film for protecting the wiring layer 201. When the first embodiment is used, the mechanical strength is ensured by the resin substrate 6 of the lower layer.
The wiring layer 201 need only be thick enough to be protected, and need not be formed thick.

FIG. 4C is a cross-sectional view when the integrated circuit 100 is manufactured by applying the second embodiment, and the silicon layer 200 and the wiring layer 201 are shown in FIG. It is formed in the same manner as in (b). However, since the resin substrate 6 is formed on the upper surface of the wiring layer 201 here,
The resin substrate 6 also serves as a protective layer that protects the wiring layer 201 at the same time. That is, the resin substrate 6
The material is selected and the thickness is set so that the material has strength as a substrate body in addition to the viewpoint as a protective layer.

As described in the second embodiment, the metal wiring layer 216 provided on the wiring layer 201 may be partially or entirely provided with the metal wiring layer 216 on the back side.

As described above, according to the third embodiment, the same effect as that of each of the above-described embodiments can be obtained. In particular, in the conventional integrated circuit, various elements are formed on a silicon wafer, but by applying the present invention, the circuit can be integrated on a silicon layer having a structure thinner than that of the silicon wafer. That is, the element forming layer 3 is significantly thinned by forming the wiring layer 201 after forming the silicon layer 200 that can function as a semiconductor device on the peeling layer 2 by a predetermined method such as a sputtering method. can do.

(Fourth Embodiment) In a fourth embodiment of the present invention, an element manufactured by the element transfer method according to the above-mentioned embodiment is applied to a plurality of two-dimensionally arranged pixel electrodes. The present invention relates to an electro-optical device including an active matrix type circuit board arranged and configured.

FIG. 5 is a connection diagram of the electro-optical (display) device 40 according to the fourth embodiment. The display device 40 of the present embodiment includes a light emitting layer OELD capable of emitting light by the electroluminescence effect in each pixel region G, and a storage capacitor C that stores a current for driving the light emitting layer OELD. A semiconductor device to be manufactured, here, it is configured to include thin film transistors T1 to T4. From the driver area 41, the scanning line Vsel and the light emission control line Vgp are supplied to each pixel area G. The data line Idata and the power supply line Vdd are supplied to each pixel region G from the driver region 42. By controlling the scanning line Vsel and the data line Idata, the current program for each pixel region G is performed, and the light emission by the light emitting section OELD can be controlled.

The active matrix type circuit is an example of a circuit in the case of using an electroluminescent element as a light emitting element, and other circuit configurations are possible. It is also possible to use a liquid crystal display element as the light emitting element by changing the circuit configuration in various ways.

The electro-optical device according to this embodiment is manufactured by applying either the transfer method according to the first embodiment or the transfer method according to the second embodiment. That is, after forming an active matrix type circuit including a pixel region on an element formation substrate, a resin substrate is formed as in the first embodiment and the transfer substrate is removed, or the second embodiment is performed. The resin layer is formed on the element forming layer tablet and cured as in the above-mentioned mode, and then the substrate for transfer is removed.

According to the fourth embodiment, the transfer method of the present invention is applied to the manufacture of such an active matrix type circuit board and electro-optical device. Therefore, the first or second embodiment described above is applied. The same effect as the effect in the above form is obtained.

In particular, according to the fourth embodiment, in the case of a large-area active matrix type circuit board such as a large-sized display device or an electro-optical device using the same, manufacturing of a circuit board having a large area The circuit structure can be provided on a thin resin substrate in the final product while performing the step on a relatively thick and tough device forming substrate. Therefore, it is possible to satisfy both contradictory requirements at the time of manufacturing and on the product such that a thin product can be finally manufactured while performing stable manufacturing without generating a crack or a defective portion in the pixel region.

Further, according to the fourth embodiment, since a circuit board having a substrate or a layer formed of a thin resin as a structural body can be used in the final product, it is possible to use a conventional circuit board or electro-optical device. It is possible to produce a final product that is significantly thinner than the device.

(Fifth Embodiment) The fifth embodiment relates to an electronic apparatus manufactured by the transfer method according to each of the above embodiments.

The electronic device according to the present embodiment is configured to include at least a part of the circuit board formed by the device transfer method according to the present invention.

FIGS. 6A to 6F show examples of electronic equipment according to the present embodiment.

FIG. 6A shows an example of a mobile phone manufactured by the transfer method of the present invention.
Electro-optical device (display panel) 111, audio output unit 11
2, a voice input unit 113, an operation unit 114, and an antenna unit 115. The transfer method of the present invention is applied to, for example, the display panel 111 or a built-in circuit board.

FIG. 6B shows an example of a video camera manufactured by the transfer method of the present invention.
Reference numeral 20 denotes an electro-optical device (display panel) 121, an operation unit 1
22, a voice input unit 123, and an image receiving unit 124. The transfer method of the present invention is applied to, for example, the display panel 121 or a built-in circuit board.

FIG. 6C shows an example of a portable personal computer manufactured by the transfer method of the present invention. The computer 50 is an electro-optical device (display panel) 1.
31, an operation unit 132, and a camera unit 133. The transfer method of the present invention is applied to, for example, the display panel 131 or a built-in circuit board.

FIG. 6D shows an example of a head mounted display, which is a head mounted display 140.
Includes an electro-optical device (display panel) 141, an optical system housing 142, and a band 143. The transfer method of the present invention is applied to, for example, the display panel 141 or a built-in circuit board.

FIG. 6 (e) is an example of a rear type projector manufactured by the transfer method of the present invention. The projector 150 includes an electro-optical device (optical modulator) 151,
Light source 152, synthetic optical system 153, mirrors 154 and 155
A mirror and screen 157 are provided within the housing 156. The transfer method of the present invention is applied to, for example, the optical modulator 151 or a built-in circuit board.

FIG. 6F shows an example of a front type projector manufactured by the transfer method of the present invention. The projector 160 is an electro-optical device (image display source) 1
61 and an optical system 162 are provided in a housing 163, and an image can be displayed on the screen 164. The transfer method of the present invention is applied to, for example, the image display source 161 or a built-in circuit board.

The transfer method according to the present invention is not limited to the above example.
It can be applied to all electronic devices that use elements and circuits. For example, in addition to this, a fax machine with a display function,
It can also be used as a viewfinder of a digital camera, a portable TV, a DSP device, a PDA, an electronic notebook, an electronic bulletin board, a display for advertisement, and the like.

According to the transfer method of the present invention, the same effect as that of the first embodiment can be obtained. That is, the adhesive layer does not exist between the elemental layer and the transfer substrate as in the conventional case,
Since it becomes possible to obtain a very thin thin film device, it is suitable for providing a circuit board that constitutes a thin portable electronic device.

(Sixth Embodiment) The fifth embodiment relates to an IC card as a suitable example of the electronic apparatus according to the fourth embodiment.

FIG. 7 shows a schematic perspective view of the IC card according to the present embodiment. As shown in FIG. 7, the IC card 170 includes a display panel 171, a fingerprint detector 173, an external terminal 174, a microprocessor 175, a memory 176, and a communication circuit 17 on a circuit board built in a main body 172.
7 and an antenna section 178.

According to the transfer method of the present invention, the same effect as that of the first embodiment can be obtained. That is, the adhesive layer does not exist between the elemental layer and the transfer substrate as in the conventional case,
Since it is possible to obtain a very thin thin film device, IC
It is particularly suitable for an electronic device such as a card that requires an extremely thin circuit board.

The transfer method of the present invention is not limited to the IC card as described above, and an apparatus requiring a thin substrate,
For example, it can be applied to banknotes, credit cards, prepaid cards, and the like.

[0145]

As described above, in the present invention, the resin is applied to the element forming layer in which the thin film transistors and the like are formed and cured to form the resin substrate of the element. An adhesive layer does not exist between the layer and the transfer substrate, and a very thin thin film device can be obtained. In addition, the curable resin is preferable because it has good adhesiveness to the element forming layer, and allows a wider choice of materials.
Further, according to the present invention, since the adhesive layer formed by the adhesive applied on the element forming layer is finally used as the substrate for supporting the entire circuit, it is possible to manufacture a significantly thin final product by the conventional transfer method. It is possible.

[Brief description of drawings]

FIG. 1 is a manufacturing step cross-sectional view illustrating a first embodiment of the present invention.

FIG. 2 is a manufacturing step sectional view illustrating a second embodiment of the present invention.

FIG. 3 is a manufacturing step sectional view illustrating a second embodiment of the present invention.

FIG. 4 is an example of an integrated circuit according to the present invention, FIG. 4 (a) is a plan view thereof, and FIG. 4 (b) is a partially enlarged cross-sectional view of the case where the first embodiment is applied. Yes, (c) is a partially enlarged cross-sectional view when the second embodiment is applied.

FIG. 5 is a connection diagram of an active matrix type substrate and an electro-optical device according to the present invention.

FIG. 6 is an example of an electronic device according to the present invention, FIG. 6 (a) is a mobile phone, FIG. 6 (b) is a video camera, and FIG.
6C shows a portable personal computer, FIG. 6D shows a head mounted display, FIG. 6E shows a rear projector, and FIG. 6F shows an example applied to a front projector.

FIG. 7 is a schematic perspective view illustrating the structure of an IC card according to the present invention.

[Explanation of symbols]

1 element formation substrate 2 Peeling (separation) layer 3 Element formation layer 4 Adhesive layer (solubility) 5 Temporary transfer substrate 6 Transfer board

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/8242 H01L 29/78 612B 21/8244 27/10 381 27/08 331 671C 27/092 27/08 321B 27/108 21/76 D 27/11 29/786 F term (reference) 2H092 JA23 JA25 JB56 KA05 KB24 KB25 KB28 MA05 MA10 MA12 MA18 MA27 NA25 NA27 NA29 PA01 5F032 AA02 CA09 CA14 CA15 CA17 CA21 CA23 DA01 DA02 DA04 DA06 DA07 DA10 DA21 DA41 DA71 5F048 AA07 AB01 AC03 AC04 BA16 BC12 BC18 BG12 5F083 AD02 HA02 ZA04 5F110 AA30 BB02 BB04 BB07 BB20 CC02 DD01 DD02 DD03 DD06 DD07 DD12 DD13 DD14 DD19 DD24 EE03 EE04 EE44 FF02 FF30 FF31 FF32 GG02 GG47 HJ01 HJ04 HJ13 HJ22 HJ23 HL03 HL23 NN02 NN04 NN23 NN35 NN72 QQ16

Claims (15)

[Claims] 1. A device-forming substrate for forming a device,
A step of forming a separation layer whose binding force is weakened under a given condition, a step of forming an element formation layer including an element on the separation layer, and a step of temporarily disposing the element formation layer via a bonding layer capable of dissolving A step of joining to the transfer substrate, a step of weakening the bonding force of the separation layer to separate the element forming layer from the element forming substrate, and moving the element forming layer to the temporary transfer substrate side; And a step of applying a resin on the element forming layer and curing the resin to form a transfer substrate, and a step of dissolving the bonding layer to separate the temporary transfer substrate from the transfer substrate. Transfer method. 2. An element formation substrate for forming an element,
A step of forming a separation layer whose binding force is weakened when given a certain condition, a step of forming an element formation layer including an element on the separation layer, and applying a resin on the element formation layer and curing the resin. Forming a transfer substrate, and weakening the bonding force of the separation layer to separate the element forming substrate from the element forming layer, and moving the element forming layer to the transfer substrate side, Device transfer method. 3. The method of transferring an element according to claim 1, further comprising the step of forming a contact hole in the element forming layer to form a wiring layer or an electrode layer. 4. The method for transferring an element according to claim 1, wherein the separation layer is made of a material whose bonding force between atoms or molecules disappears or is reduced by irradiation with light. 5. The method of transferring an element according to claim 1, wherein the separation layer is a multilayer film. 6. The method of transferring an element according to claim 1, wherein the separation layer is made of one or more materials selected from the group consisting of amorphous silicon, silicon nitride, and metal. 7. The method for transferring a device according to claim 1, wherein the separation layer contains hydrogen. 8. The bonding layer is a liquid-soluble adhesive.
The method for transferring an element according to claim 1. 9. A method of manufacturing an element, comprising the steps of the method of transferring the element according to claim 1 or 2. 10. An integrated circuit manufactured by the device transfer method according to claim 1. 11. A circuit board manufactured by the method for transferring an element according to claim 1. 12. A circuit board manufactured by the method of transferring an element according to claim 1, wherein the element is arranged on a plurality of two-dimensionally arranged pixel electrodes. 13. An electro-optical device using the circuit board according to claim 12. 14. An electronic device manufactured by the method for transferring an element according to claim 1 or 2. 15. An IC card manufactured by the element transfer method according to claim 1.