JP2009175120A - Magnetic sensor and magnetic sensor module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To especially provide a magnetic sensor and magnetic sensor module which is rationalized in arrangement of fixed resistance provided with a first soft magnetic material and a magnetoresistance effect element. <P>SOLUTION: The fixed resistance elements 4, 5 are approximately serially arranged in a longitudinal direction (Y1-Y2 direction). The fixed resistance elements 4, 5 are composed of an element part 12 provided with a fixed magnetic layer, nonmagnetic layer and free magnetic layer and a first soft magnetic material 23 positioning above the elementary part 12. A fixed resistance element formation region 80 surrounding the fixed resistance elements 4, 5 and the magnetoresistance effective elements 2, 3 are opposing in a lateral direction (X1-X2 direction). In a region between the magnetoresistance effective elements 2, 3 and the fixed resistance element formation regent 80, a third soft magnetic material 71 is provided. The third soft magnetic material 71 is formed long in a longitudinally direction. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The magnetic sensor is provided with a bridge circuit composed of a magnetoresistive effect element and a fixed resistance element. The magnetoresistive effect element has a laminated structure of a pinned magnetic layer whose magnetization direction is fixed in one direction and a free magnetic layer formed on the pinned magnetic layer via a nonmagnetic layer.

  For example, when a laminated body that exhibits a magnetoresistive effect is used for the element portion that constitutes the fixed resistance element, and a soft magnetic material that exhibits a magnetic shield effect is disposed above the element portion, , Can be fixed resistance.

  For example, as shown in FIG. 25, four elements constituting the bridge circuit are arranged. Reference numerals 100 and 101 are magnetoresistive elements, and reference numerals 102 and 103 are fixed resistance elements. The Y direction shown in FIG. 25 is the sensitivity axis direction of the magnetoresistive effect elements 100 and 101. Reference numeral 104 denotes an element portion that exhibits a meander-shaped magnetoresistive effect constituting the magnetoresistive effect elements 100 and 101, reference numeral 105 denotes a soft magnetic material constituting the fixed resistance elements 102 and 103, and reference numeral 106 denotes the fixed resistance elements 102 and 103. Is a meander-shaped element part. The magnetoresistive elements 100 and 101 are sensitive to a magnetic field from a vertical direction parallel to the sensitivity axis direction. That is, the magnetoresistive effect elements 100 and 101 change in resistance based on the magnetization relationship between the fixed magnetic layer and the free magnetic layer by the action of a magnetic field from a direction parallel to the sensitivity axis direction.

  As shown in FIG. 25, the magnetoresistive effect element 100 and the fixed resistance element 102, and the magnetoresistive effect element 101 and the fixed resistance element 103 are arranged at intervals in the sensitivity axis direction (Y direction).

However, in the element arrangement shown in FIG. 25, the magnetic field from the direction parallel to the sensitivity axis direction is amplified by the soft magnetic body 105 constituting the fixed resistance elements 102 and 103 and enters the magnetoresistive effect elements 100 and 101. Such an amplification effect of the magnetic field causes the magnetic saturation of the magnetoresistive effect elements 100 and 101 to be accelerated and the magnetic sensitivity to be lowered.
JP 2005-183614 A

  Accordingly, the present invention is to solve the above-described conventional problems, and in particular, provides a magnetic sensor and a magnetic sensor module in which the arrangement of the fixed resistance element and the magnetoresistive effect element including the first soft magnetic material is optimized. For the purpose.

The present invention is a magnetic sensor comprising a magnetoresistive effect element and a fixed resistance element,
The magnetoresistive element includes an element part having a pinned magnetic layer whose magnetization direction is fixed, and a free magnetic layer which is laminated on the pinned magnetic layer via a nonmagnetic layer and changes the magnetization direction upon receiving an external magnetic field The fixed magnetization direction of the fixed magnetic layer is a sensitivity axis direction,
The fixed resistance element includes an elongated element portion having an element length L1 longer than an element width W1, and the element portion constituting the fixed resistance element includes the fixed magnetic layer and the fixed magnetic layer. And the free magnetic layer laminated via the non-magnetic layer,
A first soft magnetic body that exhibits a magnetic shielding effect with respect to the element portion with a gap from an element portion that constitutes the fixed resistance element is laminated,
The fixed resistance element is arranged at a position that is not opposed to the magnetoresistive effect element in a longitudinal direction parallel to the sensitivity axis direction.

  As a result, the magnetic field from the longitudinal direction parallel to the sensitivity axis direction acting on the magnetoresistive effect element can be suppressed from being amplified by the first soft magnetic material, and magnetic saturation of the magnetoresistive effect element can be prevented. The sensitivity of can be kept appropriate.

  In the present invention, it is preferable that at least a part of the fixed resistance element is disposed to face the magnetoresistive element in a lateral direction perpendicular to the longitudinal direction. Thereby, the magnetoresistive effect element and the fixed resistance element are suppressed in a small region, and the magnetic field from the longitudinal direction parallel to the sensitivity axis direction acting on the magnetoresistive effect element is suppressed from being amplified by the first soft magnetic body. Can be placed properly in the state.

  In the present invention, the magnetoresistive effect element and the fixed resistance element can be arranged in a substantially line in the lateral direction.

  Moreover, in this invention, it can be set as the structure by which the said some fixed resistance element is arrange | positioned substantially serially in the said vertical direction. As a result, the magnetic shield range for the element portion of the fixed resistance element can be widened.

  In the present invention, it is preferable that the fixed resistance element forming regions of the plurality of fixed resistance elements and the magnetoresistive effect element are arranged to face each other in a horizontal direction orthogonal to the vertical direction. Thereby, the magnetic field from the vertical direction parallel to the sensitivity axis direction acting on the magnetoresistive effect element is more effectively amplified by the first soft magnetic body. In addition, the magnetic shield range can be increased with respect to the element portion of the fixed resistance element.

  In the present invention, the magnetoresistive effect element is not in contact with the element portion constituting the magnetoresistive effect element, and with respect to a magnetic field from a lateral direction orthogonal to a longitudinal direction parallel to the sensitivity axis direction. A second soft magnetic body that exhibits a magnetic shielding effect may be provided.

In the present invention, the magnetoresistive effect element is in contact with the magnetic field from the lateral direction orthogonal to the longitudinal direction parallel to the sensitivity axis direction and not in contact with the element portion constituting the magnetoresistive effect element. A second soft magnetic body that exhibits a magnetic shielding effect is provided, and both the second soft magnetic body and the first soft magnetic body constituting the fixed resistance element are formed in a shape that is long in the lateral direction. And
In a region between the magnetoresistive effect element and the fixed resistance element, a non-contact third soft magnetic body is disposed on both the magnetoresistive effect element and the fixed resistance element, and the third soft magnetic body is It is preferable that it is formed in a shape that is long in the vertical direction and has a length that is equal to or greater than the length of the magnetoresistive effect element and the fixed resistance element facing the entire area in the vertical direction. Thereby, the amplification effect of the magnetic field from the lateral direction orthogonal to the sensitivity axis direction can be suppressed.

  In the present invention, a plurality of the element portions constituting the magnetoresistive effect element are arranged at intervals in the vertical direction, and end portions of each element portion are connected to form a meander shape, It is preferable that the second soft magnetic body is formed in a non-contact manner with each of the element portions on either side of the element portion in the longitudinal direction, directly above, or directly below.

Further, in the present invention, a plurality of the element portions constituting the fixed resistance element are arranged at intervals in the element width direction, and the end portions of each element portion are connected to form a meander shape,
It is preferable that the first soft magnetic body is individually arranged for each element portion constituting the fixed resistance element. At this time, it is preferable that the first soft magnetic body is further disposed outside the outer surface of the element portion located on both sides in the element width direction. Thereby, the magnetic shielding effect with respect to the element part which comprises a fixed resistance element can be exhibited more effectively.

Further, a plurality of the element portions constituting the fixed resistance element are arranged at intervals in the element width direction, and the end portions of each element portion are connected to form a meander shape,
One of the first soft magnetic bodies may be formed to have a size that covers all of the element portions constituting the fixed resistance element.

  In the present invention, the first soft magnetic body has a width dimension W2 in the same direction as the element width W1 that is larger than the element width W1 and extends from both sides of the element width of the element portion in the element width direction. An extension that includes a protruding portion and that has a length dimension L2 in the same direction as the element length L1 that is larger than the element length L1 and extends from both sides of the element length direction of the element portion in the element length direction. And the length dimension L2 is preferably larger than the width dimension W2. Thereby, the magnetic shield effect with respect to the element part which comprises a fixed resistance element can be exhibited more effectively, and it can be appropriately fixed resistance.

  In the present invention, it is preferable that the stacking order and the film thicknesses of the element portions constituting the magnetoresistive effect element and the fixed resistance element are equal. Thereby, it can adjust with high precision so that the resistance change temperature coefficient (TCR) of a fixed resistive element and a magnetoresistive effect element may correspond.

  A magnetic sensor module according to the present invention includes a plurality of the magnetic sensors according to any one of the above, and each of the magnetic sensors has a sensitivity axis of a pair of magnetoresistive effect elements orthogonal to each other. It is characterized by being arranged. For example, the magnetic sensor module of the present invention can be used as a geomagnetic sensor.

  According to the magnetic sensor of the present invention, the magnetic field from the longitudinal direction parallel to the sensitivity axis direction acting on the magnetoresistive effect element can be suppressed from being amplified by the first soft magnetic material, and the magnetic saturation of the magnetoresistive effect element can be reduced. The sensitivity as a magnetic sensor can be maintained appropriately.

  FIG. 1A is a plan view of the magnetoresistive effect element and fixed resistance element of the magnetic sensor according to the first embodiment, and FIG. 1B is a height direction along the line CC shown in FIG. FIG. 2A is a plan view of the magnetoresistive effect element and the fixed resistance element of the magnetic sensor according to the second embodiment, and FIG. 2A is a schematic diagram of a fixed resistance element formation region and a magnetic shield range for explaining that the element arrangement is excellent, and FIG. 3 is a diagram of a magnetoresistive effect element and a fixed resistance element obtained by improving the configuration of FIG. FIG. 4 is a plan view of the magnetoresistive effect element and fixed resistance element of the magnetic sensor in the third embodiment. FIG. 5 is a plan view of the magnetoresistive effect element and fixed resistance element of the magnetic sensor in the fourth embodiment. 6 (a) is a plan view of the magnetoresistive effect element, FIG. ) Is a partial cross-sectional view taken in the height direction (Z direction in the figure) along the AA line of (a) and viewed from the arrow direction, and FIG. 7A is a magnetic sensor of a magnetic sensor different from that in FIG. FIG. 7B is a partial cross-sectional view taken along the line AA in FIG. 7A in the height direction (Z direction in the figure) and viewed from the arrow direction, FIG. FIG. 8A is a plan view of a magnetoresistive element of a magnetic sensor different from those in FIGS. 6 and 7, and FIG. 8B is a height direction (Z direction in the drawing) along the line AA in FIG. FIG. 9 is a plan view of a magnetoresistive effect element different from FIGS. 6 to 8, and FIG. 10A is a magnetoresistive effect different from FIGS. 6 to 9. FIG. 10B is a partial cross-sectional view taken along the line AA in FIG. 10A in the height direction (Z direction in the drawing) and viewed from the arrow direction, and FIG. FIG. 12 is a plan view of a magnetoresistive effect element different from FIGS. 6 to 11, and FIG. 13 is a magnetoresistive effect different from FIGS. 6 to 12. FIG. 14 is a plan view showing a portion of the element, FIG. 14 is a partially enlarged sectional view taken along the DD line shown in FIG. 13 in the height direction (Z direction in the drawing), and seen from the arrow direction, and FIG. FIG. 16 (a) is a plan view of a magnetoresistive effect element different from those shown in FIGS. 6 to 12, and FIG. 16 (b) is a plan view of FIG. 16 (a). ) In FIG. 17 is a partial cross-sectional view taken along the line A-A in the height direction (Z direction in the figure) and viewed from the arrow direction. FIG. 17 is a plan view of a magnetoresistive effect element different from FIGS. 18 (a) is a plan view of the fixed resistance element, and FIG. 18 (b) is a B- FIG. 19 is a partial cross-sectional view taken along the line B in the height direction (Z direction in the drawing) and viewed from the arrow direction, FIG. 19 is a plan view of a fixed resistance element different from FIG. 18, and FIG. 21 is a plan view of different fixed resistance elements, FIG. 21 is a diagram for explaining the relationship between the fixed magnetization direction of the fixed magnetic layer and the magnetization direction of the free magnetic layer of the magnetoresistive effect element, and the electric resistance value, and FIG. FIG. 23 is a sectional view showing a cut surface when the magnetoresistive element is cut from the film thickness direction, FIG. 23 is a circuit diagram of the magnetic sensor of the present embodiment, and FIG. 24 is a perspective view of the magnetic sensor module.

  In each figure, X1-X2 is a horizontal direction, Y1-Y2 direction is a vertical direction orthogonal to the horizontal direction, and Z1-Z2 direction is a height (film thickness) direction. In each embodiment, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 constituting the magnetoresistive elements 2 and 3 is the Y1 direction (see FIG. 22 and the like), and the Y1 direction is the sensitivity axis direction.

  The magnetic sensor 1 provided with the magnetoresistive effect element and the fixed resistance element in the present embodiment is used as a geomagnetic sensor module mounted on a portable device such as a mobile phone.

  As shown in FIG. 23, the magnetic sensor 1 includes a sensor unit 6 in which magnetoresistive effect elements 2 and 3 and fixed resistance elements 4 and 5 are bridge-connected, an input terminal 7 electrically connected to the sensor unit 6, The integrated circuit (IC) 11 includes a ground terminal 8, a differential amplifier 9, an external output terminal 10, and the like.

  In the embodiment shown in FIG. 1, the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 are arranged in the horizontal direction (X1-X2 direction) with a space T11 in a substantially line. Here, “substantially one row” allows not only manufacturing errors but also a slight shift in the vertical direction (Y1-Y2 direction). In the present embodiment, the center O1 of each of the magnetoresistive elements 2 and 3 and the center O2 of the fixed resistance element are shifted in the vertical direction (Y1-Y2 direction) by about several tens of μm due to the design of the extraction electrode. Is acceptable. The interval T11 is about 30 to 100 μm. Here, the interval T11 refers to the element portion 12 and the second soft magnetic body 18 constituting the magnetoresistive effect elements 2 and 3, and the element portion 12 and the first soft magnetic body 23 constituting the fixed resistance elements 4 and 5. Refers to the narrowest distance between. In the embodiment shown in FIG. 1, the distance is between the first soft magnetic body 23 and the second soft magnetic body 18.

  In the embodiment shown in FIG. 2A, the fixed resistance elements 4 and 5 are arranged substantially in series with a space T12 in the vertical direction (Y1-Y2 direction). In FIG. 2A, the center O4 of the fixed resistance element 4 and the center O5 of the fixed resistance element 5 coincide in the vertical direction (Y1-Y2 direction), but somewhat in the horizontal direction (X1-X2 direction). It may be displaced. Specifically, the center O4 and O5 of each fixed resistance element 4 and 5 is allowed to be displaced by about several tens of μm in the lateral direction (X1-X2 direction) due to the design of the extraction electrode.

  The fixed resistance element forming region 80 surrounded by the two fixed resistance elements 4 and 5 and the magnetoresistive effect elements 2 and 3 are arranged in the horizontal direction (X1-X2 direction) with an interval T11. The “fixed resistance element forming region 80” here is an area where the two fixed resistance elements 4 and 5 are surrounded, and the two fixed resistance elements 4 and 5 are configured as shown in FIG. The area | region which tied the outer side end surface (surface which does not oppose other adjacent 1st soft-magnetic bodies 23) of each 1st soft-magnetic body 23 to perform linearly.

  In the embodiment of FIG. 2A, the interval T12 between the fixed resistance element 4 and the fixed resistance element 5 is 2 μm or more. In order to improve the magnetic field distribution in the fixed resistance, T13 in FIG. Is preferably equal to In FIG. 2A, the center O3 of the fixed resistance element formation region 80 and the center O1 of the magnetoresistive effect elements 2 and 3 are located at substantially the same position in the lateral direction (X1-X2 direction). A configuration in which O3 is displaced in the vertical direction (Y1-Y2 direction) is also allowed.

  The configurations of the individual magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 will be described in detail below. First, the configuration of the magnetoresistive effect elements 2 and 3 will be described.

  As shown in FIG. 6, the magnetoresistive effect elements 2 and 3 have a plurality of element portions 12 that are elongated in the X direction shown in the drawing and are formed in the lateral direction (X1-X2). Are arranged side by side in the vertical direction (Y1-Y2 direction) orthogonal to the direction), and the end portions of each element portion 12 are electrically connected by the connection electrode portion 13 to form a meander shape. . An electrode portion 15 connected to the input terminal 7, the ground terminal 8, and the output extraction portion 14 (see FIG. 23) is connected to one of the element portions 12 at both ends formed in the meander shape. The connection electrode part 13 and the electrode part 15 are nonmagnetic conductive materials, such as Al, Ta, Au. The connection electrode portion 13 and the electrode portion 15 are formed by sputtering or plating.

  Each element part 12 which comprises the magnetoresistive effect elements 2 and 3 is comprised by the same laminated structure shown in FIG. FIG. 22 shows a cut surface cut in the film thickness direction from the direction parallel to the element width W3.

  The element unit 12 is formed by stacking, for example, an antiferromagnetic layer 33, a pinned magnetic layer 34, a nonmagnetic layer 35, and a free magnetic layer 36 in this order from below, and the surface of the free magnetic layer 36 is covered with a protective layer 37. It has been broken. The element part 12 is formed by sputtering, for example.

The antiferromagnetic layer 33 is made of an antiferromagnetic material such as an Ir—Mn alloy (iridium-manganese alloy). The pinned magnetic layer 34 is formed of a soft magnetic material such as a Co—Fe alloy (cobalt-iron alloy). The nonmagnetic layer 35 is made of Cu (copper) or the like. The free magnetic layer 36 is made of a soft magnetic material such as a Ni—Fe alloy (nickel-iron alloy). The protective layer 37 is made of Ta (tantalum) or the like. In the above configuration, the nonmagnetic layer 35 is a giant magnetoresistive effect element (GMR element) formed of a nonmagnetic conductive material such as Cu, but a tunnel type magnetoresistive effect element formed of an insulating material such as Al ₂ O _3. (TMR element) may be used. Further, the stacked configuration of the element section 12 shown in FIG. 22 is an example, and another stacked configuration may be used. For example, the free magnetic layer 36, the nonmagnetic layer 35, the pinned magnetic layer 34, the antiferromagnetic layer 33, and the protective layer 37 may be stacked in this order from the bottom.

  In the element unit 12, the magnetization direction of the pinned magnetic layer 34 is fixed by antiferromagnetic coupling between the antiferromagnetic layer 33 and the pinned magnetic layer 34. As shown in FIGS. 6 and 22, the pinned magnetization direction (P direction) of the pinned magnetic layer 34 faces the element width direction (Y1 direction). That is, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 is orthogonal to the longitudinal direction of the element portion 12.

On the other hand, the magnetization direction (F direction) of the free magnetic layer 36 varies depending on the external magnetic field.
As shown in FIG. 21, when the external magnetic field H1 acts from the same direction as the fixed magnetization direction (P direction) of the fixed magnetic layer 34 and the magnetization direction (F direction) of the free magnetic layer 36 faces the external magnetic field H1 direction, The fixed magnetization direction (P direction) of the fixed magnetic layer 34 and the magnetization direction (F direction) of the free magnetic layer 36 approach parallel to each other, and the electric resistance value decreases.

  On the other hand, as shown in FIG. 21, the external magnetic field H2 acts from the direction opposite to the fixed magnetization direction (P direction) of the fixed magnetic layer 34, and the magnetization direction (F direction) of the free magnetic layer 36 faces the external magnetic field H2. Then, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 and the magnetization direction (F direction) of the free magnetic layer 36 approach antiparallel, and the electrical resistance value increases.

As shown in FIG. 6B, the magnetoresistive elements 2 and 3 are formed on the substrate 16. The magnetoresistive elements 2 and ₃ are covered with an insulating layer 17 such as Al ₂ O ₃ or SiO ₂ . Also, the space between the element portions 12 constituting the magnetoresistive effect elements 2 and 3 is filled with the insulating layer 17. The insulating layer 17 is formed by sputtering, for example.

  As shown in FIG. 6B, the upper surface of the insulating layer 17 is formed on a flat surface by using, for example, a CMP technique. However, the upper surface of the insulating layer 17 may be formed as an uneven surface following the step between the element portion 12 and the substrate 16. The same applies to FIGS. 7B, 8B, 10B, and 18B.

  As shown in FIG. 6, the 2nd soft magnetic body 18 is provided between the element parts 12 which comprise the magnetoresistive effect elements 2 and 3, and the outer side of the element part 12 located in the outermost side. The second soft magnetic body 18 is formed into a thin film by sputtering or plating, for example. The second soft magnetic body 18 is made of NiFe, CoFe, CoFeSiB, CoZrNb, or the like. In this embodiment, the width dimension W4 of the second soft magnetic body 18 is smaller than the element width W3 of the element portion 12. In addition, the length dimension L4 of the second soft magnetic body 18 is longer than the element length L3 of the element section 12, and the second soft magnetic body 18 has a lateral direction of the element section 12 as shown in FIG. An extending portion 18a extending in the longitudinal direction from both sides (X1-X2 direction) is provided.

  As shown in FIG. 6B, the second soft magnetic body 18 is formed on the insulating layer 17 between the element portions 12. Although not shown, the second soft magnetic body 18 and the second soft magnetic body 18 are covered with an insulating protective layer.

Each dimension will be described.
The element width W3 of the element portion 12 constituting the magnetoresistive effect elements 2 and 3 is in the range of 2 to 6 μm in order to use shape anisotropy when used as a geomagnetic sensor (see FIG. 6A). ). Moreover, the element length L3 of the element part 12 exists in the range of 60-100 micrometers (refer Fig.6 (a)). The film thickness T1 of the element portion 12 is in the range of 200 to 300 mm (see FIG. 6B). In this embodiment, the width dimension W4 of the second soft magnetic body 18 is in the range of 1 to 6 μm when used as a geomagnetic sensor (see FIG. 6A). The length L4 of the second soft magnetic body 18 is in the range of 80 to 200 μm (see FIG. 6A). The film thickness T2 of the second soft magnetic body 18 is in the range of 0.2 to 1 μm (see FIG. 6B). The aspect ratio (element length L3 / element width W3) of the element portion 12 is 10 or more when used as a geomagnetic sensor. The aspect ratio (length dimension L4 / width dimension W4) of the second soft magnetic body 18 is preferably equal to or greater than the aspect ratio of the element portion 12. Moreover, the length dimension T8 of the extending portion 18a of the second soft magnetic body 18 is 20 μm or more (see FIG. 6A).

  The distance (distance in the Y1-Y2 direction) T3 between the second soft magnetic bodies 18 in the embodiment of FIG. 6 is 2 to 8 μm in the width dimension W4 or more of the second soft magnetic bodies (FIG. 6B). reference). The distance T4 in the Y1-Y2 direction between the second soft magnetic body 18 located adjacent to the element portion 12 is 0 <T4 <3 μm (see FIG. 6B). The distance T5 in the height direction (Z direction) between the second soft magnetic body 18 and the element portion 12 is 0.1 to 1 μm (see FIG. 6B).

  Next, in the embodiment shown in FIG. 7, unlike FIG. 6, the second soft magnetic body 18 is arranged directly above each element portion 12 via the insulating layer 17. Further, in the embodiment shown in FIG. 8, unlike FIG. 1, the second soft magnetic body 18 is disposed directly below each element portion 12 via the insulating layer 17. In FIG. 8, the second soft magnetic body 18 is formed on the substrate 16, the insulating layer 17 is formed on the substrate 16 between the second soft magnetic body 18 and the second soft magnetic body 18, and the magnetic layer is formed on the insulating layer 17. In this configuration, resistance effect elements 2 and 3 are formed. In the embodiment in which the second soft magnetic body 18 is disposed directly below the element portion 12 as shown in FIG. 8, the second soft magnetic body 18 is processed before forming the element portion 12 when, for example, an annealing process is desired. The influence on the element part 12 can be suppressed.

  In the embodiment shown in FIGS. 7 and 8, the width dimension W4 of the second soft magnetic body 18 is smaller than the element width W3, as in FIG. The length L4 of the second soft magnetic body 18 is longer than the element length L3, and the second soft magnetic body 18 has an extending portion 18a extending in the longitudinal direction from both sides in the longitudinal direction (X direction) of the element portion 12. Is formed.

  In the embodiment shown in FIGS. 7 and 8, the second soft magnetic body 18 whose width dimension W4 is smaller than the element width W3 is within the element width W3 of the element portion 12 in plan view (extrudes in the element width W3 direction). Is arranged).

  The element width W3 in the embodiment shown in FIGS. 7 and 8 is 5 to 8 μm. When used as a geomagnetic sensor, the width dimension W4 of the second soft magnetic body 18 is narrower than W3 and within a range of 2 to 6 μm (see FIGS. 7A and 8A).

  The distance (distance in the Y1-Y2 direction) T6 between the second soft magnetic bodies 18 shown in FIGS. 7B and 8B is 6 to 10 μm. A distance T7 in the height direction (Z direction) between the second soft magnetic body 18 and the element portion 12 is 0.1 to 1 μm.

  The magnetic sensor 1 in this embodiment is for detecting geomagnetism from the vertical direction (Y1-Y2 direction; element width direction). Therefore, the Y1-Y2 direction shown in the figure is the sensitivity axis direction, and the lateral direction (X1-X2 direction) is the longitudinal direction of the element portion 12. The fixed magnetization direction (P direction) of the fixed magnetic layer 34 is oriented in the Y1 direction, which is the sensitivity axis direction.

  In the present embodiment, the second soft magnetic body 18 that is not in contact with the element portion 12 is provided. The second soft magnetic body 18 has a shape elongated in the lateral direction (X1-X2 direction), similar to the element section 12, and both the easy magnetization axis directions of the element section 12 and the second soft magnetic body 18 are the same direction. Shape anisotropy is imparted. Further, the magnetic permeability of the second soft magnetic body 18 is larger than the magnetic permeability of the element portion 12.

  Furthermore, the second soft magnetic body 18 in the present embodiment includes an extending portion 18 a extending in the lateral direction from both sides in the lateral direction (X direction) of each element portion 12 constituting the magnetoresistive effect elements 2 and 3.

  For this reason, even if an external magnetic field acts from the lateral direction (X1-X2 direction), the magnetic field easily passes through the second soft magnetic body 18 with priority. Therefore, the second soft magnetic body 18 exhibits a magnetic shielding effect in the lateral direction orthogonal to the sensitivity axis direction. On the other hand, the sensitivity as a magnetic sensor can be maintained with respect to an external magnetic field (geomagnetism) from the sensitivity axis direction (Y1-Y2 direction), and the magnitude of the electric resistance value varies based on the magnetic field strength of the geomagnetism. The geomagnetism from the Y1-Y2 direction can be detected appropriately.

  In this embodiment, the width dimension W4 of the second soft magnetic body 18 is the same as the element width W3 of the element section 12 as shown in FIG. 9, or the width dimension of the second soft magnetic body 18 as shown in FIG. Even if W4 is larger than the element width W3 of the element part 12, the distance T9 (FIG. 10B) in the longitudinal direction (Y1-Y2 direction) between the element part 12 and the second soft magnetic body 18 and the element part 12 By appropriately adjusting the distance T10 (FIG. 10B) in the height direction from the second soft magnetic body 18 together, the second soft magnetic body 18 causes the lateral direction (X1) orthogonal to the sensitivity axis direction. The magnetic shield effect in the −X2 direction) is appropriately exhibited, and the sensitivity as a magnetic sensor can be maintained with respect to the external magnetic field (geomagnetism) from the sensitivity axis direction (Y1-Y2 direction). The distance T9 in the vertical direction (Y1-Y2 direction) between the second soft magnetic body 18 and the element portion 12 is preferably in the range of 0 to 3 μm. Moreover, it is preferable that the distance T10 of the element part 12 and the 2nd soft magnetic body 18 in the height direction exists in the range of 0.1-1 micrometer. The distance T12 in the longitudinal direction (Y1-Y2 direction) between the second soft magnetic bodies 18 is preferably in the range of 2 ≦ T12 ≦ 6 μm.

  Further, the embodiment shown in FIG. 11 is obtained by partially improving the configuration of the magnetoresistive effect elements 2 and 3 shown in FIG. In FIG. 11, the second soft magnetic body 24 is formed on the outer side of the outer side surfaces 12 a of the element portion 12 located on both sides of the longitudinal direction (Y1-Y2 direction) constituting the magnetoresistive effect elements 2 and 3. .

  As shown in FIG. 11, by providing the second soft magnetic body 24 on the outer side of the element unit 12, the magnetic shielding effect against the magnetic field from the lateral direction (X1-X2 direction) orthogonal to the sensitivity axis direction is more effectively achieved. Can be improved. 6 (a), FIG. 9, and FIG. 10, the second soft magnetic body 18 already exists outside the element portion 12, but the implementation of FIG. 6 (a), FIG. 9, and FIG. Also in the embodiment, by providing the second soft magnetic body 24 on both sides thereof, the magnetic shielding effect against the magnetic field from the lateral direction (X1-X2 direction) orthogonal to the sensitivity axis direction can be improved more effectively. .

  In the embodiment shown in FIG. 12, a plurality of element parts 12 are arranged in parallel in the lateral direction (X1-X2 direction), and the intermediate permanent magnet layer 60 is formed in the gaps between the element parts 12. Intervene. Thereby, the element coupling body 61 extending in a strip shape in the lateral direction (X1-X2 direction) in which the element portions 12 are coupled via the intermediate permanent magnet layer 60 is configured. A plurality of element coupling bodies 61 are arranged in parallel in the vertical direction (Y1-Y2 direction), and the end portions of each element coupling body 61 are connected by a connection layer 62 to form a meander-shaped magnetoresistive effect element. 2 and 3 are configured. The connection layer 62 may be a permanent magnet or a nonmagnetic electrode.

  In the embodiment of FIG. 12, since the plurality of element portions 12 are connected by the intermediate permanent magnet layer 60 and the connection layer 62 and have a meander shape that increases the total element length, the element resistance can be increased and the power consumption can be increased. Can be reduced.

  In the embodiment of FIG. 12, an element coupling body 61 in which a plurality of element portions 12 are coupled via the intermediate permanent magnet layer 60 is formed, and the plurality of element coupling bodies 61 are arranged side by side in the element width direction. End portions of the coupling body 61 are connected by a connection layer 62. Therefore, as compared with a configuration in which all the element portions 12 are arranged in parallel in the vertical direction (Y1-Y2 direction) and the end portions of each element portion 12 are connected by the connection layer 62 (intermediate permanent magnet layer 60). In the vertical direction (Y1-Y2 direction), the length of the magnetoresistive effect elements 2 and 3 in the vertical direction (Y1-Y2 direction) can be reduced.

  In the embodiment shown in FIG. 12, the second soft magnetic body 18 is formed between the element coupling bodies 61 and outside the element coupling body 61 located on the outermost side in the element width direction as in FIG. . The interval between the second soft magnetic bodies 18 is the same as the distance T12 in FIG. 10, and 2 ≦ T12 ≦ 6 μm.

  FIG. 13 is a modification of FIG. In the embodiment shown in FIG. 13, in the magnetoresistive effect elements 2 and 3, the connection layer 62 that connects between the end portions of the element coupling body 61 is formed in a straight line shape (band shape) in the Y direction. The second soft magnetic body 18 passes through the insulating layer. That is, the connection layer 62 and the second soft magnetic body 18 intersect each other in the height direction (Z direction in the drawing). The connection layer 62 is made of a good conductor such as Al, Au, or Cu.

  The electrode layer 62 only needs to be electrically insulated from the soft magnetic body 18 and may be formed on the soft magnetic body 18.

  In FIG. 12, the connection layer 62 is formed so as to bypass the second soft magnetic body 18 in a plane, but in FIG. 13, the connection layer 62 and the second soft magnetic body 18 are arranged in the height direction (Z in the drawing). Direction), the length of the magnetoresistive effect elements 2 and 3 in the X direction shown in the figure can be reduced, and the wiring resistance of the electrode layer 62 not involved in the magnetoresistive effect can be reduced, resulting in sensor characteristics. improves. In addition, the insulation between the connection layer 62 and the second soft magnetic body 18 is low, and even if a short circuit occurs, there is no short circuit on the side opposite to the side intersecting the electrode layer 19 due to the meander shape, and no bypass circuit is generated. Therefore, there is no significant influence on the sensor characteristics. Further, by forming the connection layer 62 with a nonmagnetic good conductor, the parasitic resistance can be reduced as compared with the configuration in which the connection layer 62 is formed with a permanent magnet layer. Although the magnetic body 18 is affected and the shielding effect is lowered, such a problem does not occur in the present embodiment.

  As shown in the cross-sectional view of FIG. 14, the antiferromagnetic layer 33, the pinned magnetic layer 34, and the nonmagnetic layer 35 constituting each element unit 12 are not divided at the formation position of the permanent magnet layer 60 and are integrated. . That is, at the position where the permanent magnet layer 60 is formed, the protective layer 37 and the free magnetic layer 36 constituting the element portion 12 are scraped by ion milling or the like to form the recess 63. Therefore, the nonmagnetic layer 35 is exposed on the bottom surface 63 a of the recess 63. Note that the recess 63 may be formed by cutting a part of the nonmagnetic layer 35. A permanent magnet layer 60 is provided in the recess 63. Since the pinned magnetic layer 34 is not divided by the configuration shown in FIG. 14, the magnetization of the pinned magnetic layer 34 can be stabilized in the Y direction in the drawing, and the uniaxial anisotropy can be improved. Further, in the configuration in which the permanent magnet layer 60 is provided between the element portions 12 by dividing the pinned magnetic layer 34 and the antiferromagnetic layer 33, electrical contact between the permanent magnet layer 60 and the element portion 12 is on each side. Although the parasitic resistance tends to increase, the parasitic resistance can be reduced by making the electrical contact between the permanent magnet layer 60 and the element portion 12 planar contact as in the present embodiment.

  Further, as shown in FIG. 14, a low resistance layer 64 having a resistance value smaller than that of the permanent magnet layer 60 is formed on the upper surface of the permanent magnet layer 60 in an overlapping manner. The low resistance layer 64 is preferably formed of a nonmagnetic good conductor such as Au, Al, or Cu. The low resistance layer 64 is formed by sputtering or plating in the same manner as the permanent magnet layer 60. As shown in FIG. 14, by forming the low resistance layer 64 on the permanent magnet layer 60, the parasitic resistance can be reduced more effectively.

  Further, when the aspect ratio (element length L11 / element width W3) (see FIG. 15) of the element portion 12 sandwiched between the permanent magnet layers 60 is increased, the bias magnetic field from the permanent magnet layer 60 is reduced. It will not be properly supplied to the whole. For this reason, hysteresis tends to occur in the resistance change region when the magnetic field is applied from the direction orthogonal to the sensitivity axis direction (X direction) and the magnetic field strength is gradually increased. Therefore, the resistance change area with respect to the magnetic field (disturbance magnetic field) from the orthogonal direction is widened, so that the disturbance magnetic field resistance is easily lowered. Therefore, it is preferable that the aspect ratio of the element unit 12 is small in order to appropriately supply a bias magnetic field to the entire element unit 12 to improve disturbance magnetic field resistance. Specifically, the aspect ratio of the element portion 12 is preferably 3 or less, more preferably less than 1.

  In the embodiment shown in FIG. 16, the magnetoresistive effect elements 2 and 3 have a plurality of element portions 12 that are elongated in the longitudinal direction (Y1-Y2 direction) in which the element length L3 is formed longer than the element width W3. The elements are arranged side by side in the horizontal direction (X1-X2 direction) with a predetermined interval, and the end portions of the element portions 12 are electrically connected by the connection electrode portion 13 to form a meander shape. In this embodiment, since the electrode parts 13 and 15 which connect between the element parts 12 can be formed with a material whose resistance is sufficiently smaller than that of the element parts 12, compared with the conventional case where the element parts 12 are connected by a permanent magnet layer. Parasitic resistance can be reduced. The connection electrode portion 13 and the electrode portion 15 are formed by sputtering or plating.

  In the embodiment of FIG. 16, the pinned magnetization direction (P direction) of the pinned magnetic layer 34 is oriented in the longitudinal direction (Y1-Y2 direction). That is, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 is the longitudinal direction of the element portion 12.

  As shown in FIG. 16, permanent magnet layers 19 are arranged on both sides of each element portion 12 in the lateral direction (X1-X2 direction) with a space therebetween. The permanent magnet layer 19 has a width dimension W10 facing in the same direction as the horizontal direction (X1-X2 direction) and a length dimension L10 facing the vertical direction (Y1-Y2 direction). The length dimension L10 is larger than the width dimension W10, and the permanent magnet layer 19 has an elongated shape extending in the longitudinal direction (Y1-Y2 direction).

  The permanent magnet layer 19 is made of a hard magnetic material such as CoPt or CoPtCr. The permanent magnet layer 19 is formed by sputtering, for example.

  In the embodiment of FIG. 16, a bias magnetic field is supplied from the permanent magnet layer 19 to the element unit 12 from the lateral direction (X1-X2 direction). As a result, the magnetization direction (F direction) of the free magnetic layer 36 is directed in the lateral direction (X1-X2 direction).

  In the embodiment shown in FIG. 16, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 faces the longitudinal direction (Y1-Y2 direction; element length direction) which is the easy axis direction. On the other hand, the element width direction (X1-X2 direction) is the hard axis direction.

  With the configuration of FIG. 16, it is possible to reduce the magnetic sensitivity with respect to the magnetic field from the lateral direction orthogonal to the sensitivity axis direction while maintaining good magnetic sensitivity to the magnetic field in the sensitivity axis direction.

  In the embodiment of FIG. 17, unlike FIG. 16, the pair of permanent magnet layers 19 is disposed only outside the element portion 12 located on both sides in the lateral direction (X1-X2 direction). Even if the permanent magnet layers 19 are not arranged on both sides of each element portion 12 as shown in FIG. 16, the arrangement as shown in FIG. 17 may be used as long as a large bias magnetic field can be supplied to the entire element portion 12.

  In the embodiment shown in FIGS. 16 and 17, the second soft magnetic body 18 that exhibits a magnetic shielding effect against a magnetic field from the lateral direction is formed with the lateral direction (X1-X2 direction) as the longitudinal direction. The second soft magnetic body 18 is formed on an insulating layer (not shown) (corresponding to the insulating layer 17 in FIG. 6B) that covers the permanent magnet layer 19 and the element portion 12 shown in FIG.

Next, the configuration of the fixed resistance elements 4 and 5 constituting the magnetic sensor 1 will be described.
As shown in FIG. 18A, in the present embodiment, the fixed resistance elements 4 and 5 also include the same element portion 12 as the magnetoresistive effect elements 2 and 3. That is, the stacked structure described in FIG. 22 is provided. The fixed resistor elements 4 and 5 have an element width W1 and an element length L1. The element width W1 and the element length L1 of the element portion 12 of the fixed resistance elements 4 and 5 can be made equal to the element width W3 and the element length L3 of the element portion 12 of the magnetoresistive effect elements 2 and 3 (see FIG. 6 and the like). ).

  Further, the end portions of the element portion 12 constituting the fixed resistance elements 4 and 5 are connected to each other through the connection electrode portion 13 and have a meander shape.

  As shown in FIG. 18A, each element portion 12 constituting the fixed resistance elements 4 and 5 is formed with the horizontal direction (X1-X2 direction) as the longitudinal direction.

  As shown in FIG. 1B, the fixed resistance elements 4 and 5 are also formed on the substrate 16 in the same manner as the magnetoresistance effect elements 2 and 3. The fixed resistance elements 4 and 5 are also covered with the insulating layer 17 covering the magnetoresistive effect elements 2 and 3, and the first soft magnetic body 23 is disposed above the fixed resistance elements 4 and 5 via the insulating layer 17. Has been placed.

  The first soft magnetic body 23 is formed as a thin film by sputtering or plating, for example. The first soft magnetic body 23 is made of NiFe, CoFe, CoFeSiB, CoZrNb, or the like.

  In FIG. 18, shape anisotropy is imparted to the element portion 12 constituting the fixed resistance elements 4 and 5 and the first soft magnetic body 23 in the same easy axis direction.

  The first soft magnetic body 23 has a width dimension W2 in the same direction (X1-X2 direction) as the element width W1 constituting the fixed resistance elements 4 and 5, and is long in the same direction (Y1-Y2 direction) as the element length L1. It is formed with a length L2. The width dimension W2 is larger than the element width W1, and the first soft magnetic body 23 includes extending portions 23a extending in the element width direction from both sides of the element width of the element portion 12. Further, the length dimension L2 is larger than the element length L1, and the first soft magnetic body 23 includes extending portions 23b extending in the lateral direction from both sides of the element portion 12 in the lateral direction (X1-X2 direction). . As shown in FIG. 1A, the length dimension L4 is larger than the width dimension W4.

  The fixed magnetization direction (P direction) of the fixed magnetic layer 34 of the element unit 12 constituting the fixed resistance elements 4 and 5 may be directed in the vertical direction (Y1-Y2) or in the horizontal direction (X1-X2 direction). May be directed to.

  The element width dimension W1 is about 2 to 6 μm when used as a geomagnetic sensor, and the width dimension W2 of the first soft magnetic body 23 is not less than the element width W1 and 6 to 10 μm (see FIG. 18A). The length dimension L2 of the first soft magnetic body 23 is 80 to 200 μm (see FIG. 18A). The aspect ratio (length dimension L2 / width dimension W2) of the first soft magnetic body 23 is 10 or more. The distance between the first soft magnetic bodies 23 (distance in the X direction) T13 is 2 μm or more (see FIG. 18B).

  The film thickness of the first soft magnetic body 23 is the same as the film thickness T2 of the second soft magnetic body 18, and the distance T14 between the first soft magnetic body 23 and the element portion 12 in the height direction (Z direction) is The distance T5 in the height direction (Z direction) between the second soft magnetic body 18 and the element portion 12 is the same (see FIG. 6B).

  The element portion 12 constituting the magnetoresistive effect elements 2 and 3 and the element portion 12 constituting the fixed resistance elements 4 and 5 may be used in different laminated structures, but the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 are fixed. Since the same element portion 12 (with the same stacking order and film thickness) is used for the resistance elements 4 and 5, the resistance change temperature coefficient (TCR) of the magnetoresistance effect elements 2 and 3 and the fixed resistance elements 4 and 5 can be made equal. Moreover, since the resistance value is the same, a patterning process for matching the resistance value is not necessary.

  Also, above the fixed resistance elements 4 and 5, the element portion 12 of the fixed resistance elements 4 and 5 is completely covered in a plan view, and the elongated first softening having a length dimension L2 longer than the width dimension W2 is formed. By facing the magnetic body 23, it is possible to appropriately shield the external magnetic field flowing into the element portion 12 constituting the fixed resistance elements 4 and 5. Further, the magnetic permeability of the first soft magnetic body 23 is larger than the magnetic permeability of the element portion 12. For this reason, most of the external magnetic field flows on the first soft magnetic body 23 side, and the external magnetic field flowing into the element part 12 can be made very small, and the unit magnetic field per unit magnetic field in the element part 12 constituting the fixed resistance elements 4 and 5 can be reduced. The resistance change rate (MR ratio) can be very small. When the magnetic sensor 1 shown in FIG. 1 is a geomagnetic sensor, the external magnetic field combining the geomagnetism and the leakage magnetic field generated inside the device is about 5 to 10 Oe. At this time, the unit magnetic field per unit magnetic field of the fixed resistance elements 4 and 5 The resistance change rate (MR ratio) can be suppressed to 0.2% or less.

  Note that the same shielding effect can be obtained even if the first soft magnetic body 23 is arranged facing the lower portion of the element portion 12. In that case, the second soft magnetic body 18 may be similarly disposed below the element portion 12 in the magnetoresistive effect elements 2 and 3. Further, the first soft magnetic body 23 may be arranged on both the upper and lower sides of the element portion 12.

  In another embodiment shown in FIG. 19, the first soft magnetic body 23 is integrated. The first soft magnetic body 23 shown in FIG. 19 is formed to have a size that covers the top of all the element portions 12 constituting the fixed resistance elements 4 and 5. However, as shown in FIG. 18, the width dimension W2 of the first soft magnetic body 23 shown in FIG. 19 facing in the element width W1 direction is smaller than the length dimension L2 facing in the element length L1 direction. It is preferable that the length dimension of the extension part from the element part 12 in the first soft magnetic body 23 is 20 μm or more in both the X1-X2 direction and the Y1-Y2 direction.

  For the fixed resistance elements 4 and 5, in addition to the configuration described in FIGS. 18 and 19, for example, as shown in FIG. 20, the fixed resistance elements 4 and 5 of FIG. It is good also as arrangement | positioning in which the longitudinal direction of the magnetic body 23 faces a vertical direction (Y1-Y2 direction). The pinned magnetization direction (P direction) of the pinned magnetic layer 34 at this time is not limited, but if the Y1 direction which is the longitudinal direction of the element is used, the pinned magnetization direction (P direction) of the pinned magnetic layer 34 of the magnetoresistive effect elements 2 and 3. ), The manufacture of the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 can be facilitated.

  As shown in FIGS. 1 and 2, in this embodiment, the fixed resistance elements 4 and 5 do not face the magnetoresistive effect elements 2 and 3 in the longitudinal direction (Y1-Y2 direction) parallel to the sensitivity axis direction. Placed in position. Specifically, in the embodiment shown in FIG. 1, the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 are arranged in a line in the horizontal direction (X1-X2 direction). In the embodiment shown in FIG. 2, the two fixed resistance elements 4 and 5 are arranged substantially in series in the vertical direction (Y1-Y2 direction), and the fixed resistance elements surrounding the two fixed resistance elements 4 and 5. The formation region 80 and the magnetoresistive effect elements 2 and 3 are arranged to face each other in the lateral direction (X1-X2 direction).

  Thereby, it is possible to suppress the magnetic field from the longitudinal direction parallel to the sensitivity axis direction acting on the magnetoresistive effect elements 2 and 3 from being amplified by the first soft magnetic body 23. When the magnetic sensor 1 is used as a geomagnetic sensor, the amount of leakage magnetic field inside the device generated in the portable device tends to be larger than the amount of geomagnetism. The leakage magnetic field is assumed to be several Oe or more (about 5 to 10 Oe) with respect to the geomagnetism of the comma number Oe. In this embodiment, even if such a leakage magnetic field acts from the sensitivity axis direction, the amplification effect can be suppressed as described above, so that magnetic saturation of the magnetoresistive effect elements 2 and 3 can be prevented, and the magnetic sensor 1 The sensitivity can be kept appropriate.

  In the embodiment shown in FIGS. 1 and 2, the fixed resistance elements 4 and 5 and the magnetoresistive effect elements 2 and 3 are arranged so as to face each other substantially in the lateral direction (X1-X2 direction). The magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 are placed in a small area, and the magnetic field from the longitudinal direction parallel to the sensitivity axis direction acting on the magnetoresistive effect elements 2 and 3 is caused by the first soft magnetic body 23. Arrangement can be made appropriately in a state where amplification is suppressed.

  Next, in the embodiment shown in FIG. 2, unlike the embodiment shown in FIG. 1, the fixed resistance elements 4 and 5 are arranged substantially in series in the vertical direction (Y1-Y2 direction). With such an arrangement, the magnetic shield range for the element portion 12 constituting the fixed resistance elements 4 and 5 can be widened.

  FIG. 2B shows a schematic diagram of the magnetic shield range. 2B shows a fixed resistance element formation region 81 of each fixed resistance element 4 and 5 when the fixed resistance elements 4 and 5 are arranged in the horizontal direction as shown in FIG. The right figure of b) shows the fixed resistive element formation region 80 of FIG. The shaded area shown in FIG. 2B is the magnetic shield range. That is, as shown in FIG. 2B, the vicinity of the four corners of the fixed resistance element forming regions 80 and 81 is a place where the external magnetic field is relatively large and the magnetic shielding effect is small. As shown in FIG. 2B, the fixed resistance elements 4 and 5 are arranged in series and the fixed resistance element forming region 80 is enlarged, so that the area between the fixed resistance element 4 and the fixed resistance element 5 (see FIG. Even in the vicinity of the dotted line area shown in b), the magnetic shielding effect is appropriately exhibited. Therefore, the magnetic shield range for each of the fixed resistance elements 4 and 5 can be widened by arranging the fixed resistance elements 4 and 5 substantially in series in the vertical direction as shown in FIG.

  The magnetic sensor 1 shown in FIG. 1 and FIG. 2 described above is a basic form characterized by the arrangement of the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5. It does not depend on whether or not the second soft magnetic body 18 is formed and the direction of the first soft magnetic body 23 provided in the fixed resistance elements 4 and 5 in the longitudinal direction.

  As described above, the configuration of the magnetoresistive effect elements 2 and 3 of the embodiment shown in FIGS. 1 and 2 has been described with reference to FIG. 6 and subsequent figures. In the magnetoresistive effect elements 2 and 3, the lateral direction ( The means may be means other than providing the second soft magnetic body 18 as long as it is not sensitive to the magnetic field from the (X1-X2 direction). For example, there is means for supplying a bias magnetic field from the lateral direction to the element unit 12 using a permanent magnet layer. This is already practiced in FIGS. 12, 16, and 17. FIG. In the embodiment shown in FIGS. 12, 16, and 17, the external magnetic field from the lateral direction (X1-X2 direction) perpendicular to the sensitivity axis is obtained by the shape anisotropy of each element portion 12 and the action of the permanent magnet layer. Therefore, even if the second soft magnetic body 18 is not formed, it functions sufficiently. However, the second soft magnetic body 18 is formed so that the lateral sensitivity can be further reduced. In the configuration of FIG. 6 and the like, the second soft magnetic body 18 is not provided, and the connection electrode portion 13 and the electrode portion 15 are formed of a permanent magnet layer, so that the transverse direction (X1-X2 direction) perpendicular to the sensitivity axis is obtained. The sensitivity to the external magnetic field from can be lowered.

  The arrangement order of the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 shown in FIGS. 1 and 2 is not particularly limited. For example, in FIG. 1, the fixed resistance elements 4 and 5 are arranged in the middle of the array and the magnetoresistive elements 2 and 3 are arranged on both sides thereof. However, the magnetoresistive effect elements 2 and 3 are arranged on both sides of the array. The fixed resistance elements 4 and 5 may be arranged, or the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 may be alternately arranged. In FIG. 2, the fixed resistance element forming region 80 is located in the middle, but may be disposed on the outer side of the magnetoresistive effect elements 2 and 3.

  Further, the number of magnetoresistive effect elements and fixed resistance elements is not limited. In FIG. 1 and FIG. 2, two magnetoresistive elements 2 and 3 and two fixed resistive elements 4 and 5 are provided to form the bridge circuit shown in FIG. Each may be sufficient, and there may be more than two magnetoresistive effect elements and fixed resistance elements.

  The embodiment shown in FIG. 3 is a configuration obtained by improving the embodiment shown in FIG. That is, in the embodiment shown in FIG. 3, among the element portions 12 constituting the fixed resistance elements 4, 5, the first outside the outer surface 12 a of the element portion 12 in the element width direction (vertical direction; Y1-Y2 direction). A soft magnetic body 25 is provided. As a result, it is possible to more effectively exhibit the magnetic shield effect on the element portion 12 constituting the fixed resistance elements 4 and 5. The hatched portion shown in FIG. 3 is a portion where the external magnetic field is relatively large. As shown in FIG. 3, by providing the first soft magnetic body 25 on both sides of the first soft magnetic body 23, it is possible to prevent a large external magnetic field from acting on the element portion 12 more effectively, and the effect of fixed resistance is achieved. Can be promoted.

The embodiment shown in FIGS. 4 and 5 differs from the embodiment shown in FIGS. 1 and 2 in the following points.
In the embodiment shown in FIG. 4, the magnetoresistive effect elements 2 and 3 and the fixed resistance element are arranged between the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 in the lateral direction (X1-X2 direction). A non-contact third soft magnetic body 70 is provided at 4 and 5. The width dimension of the third soft magnetic body 70 is W5, and the length dimension orthogonal to the width dimension W5 is L5. The width dimension W5 of the third soft magnetic body 70 is about 2 to 20 μm. As shown in FIG. 4, the third soft magnetic body 70 is arranged so that the length direction of the third soft magnetic body 70 is directed in the longitudinal direction (Y1-Y2 direction). The length dimension L5 of the third soft magnetic body 70 extends in the vertical direction of the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 positioned in the lateral direction (X1-X2 direction) of the third soft magnetic body 70. It is formed with the length which opposes the whole area of this. That is, the longitudinal dimension (Y1-Y2 direction) of the magnetoresistive elements 2 and 3 is L6, and the longitudinal dimension (Y1-Y2 direction) of the fixed resistive elements 4 and 5 is L7. The length dimension L5 of the third soft magnetic body 70 is not less than the length dimension L6 of the magnetoresistive effect elements 2 and 3, and is not less than the length dimension L7 of the fixed resistance elements 4 and 5.

  In the embodiment shown in FIG. 4, the third soft magnetic body 70 has both ends in the longitudinal direction (Y1-Y2 direction) of the magnetoresistive effect elements 2, 3 and the longitudinal direction (Y1-Y2 direction) of the fixed resistance elements 4, 5. It has the extension part 70a extended in the vertical direction from both ends.

  The third soft magnetic body 70 is on the same insulating layer 17 as the second soft magnetic body 18 constituting the magnetoresistive effect elements 2 and 3 and the first soft magnetic body 23 constituting the fixed resistance elements 4 and 5 (FIG. 1). (See (b)).

  In the embodiment shown in FIG. 5, the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 4 are arranged between the magnetoresistive effect elements 2 and 3 and the fixed resistance element forming region 80 in the lateral direction (X1-X2 direction). 5 is provided with a non-contact third soft magnetic body 71. The width dimension of the third soft magnetic body 71 is W8, and the length dimension orthogonal to the width dimension W8 is L8. The width dimension W8 of the third soft magnetic body 71 is about 2 to 20 μm. As shown in FIG. 2, the third soft magnetic body 71 is arranged so that the length direction of the third soft magnetic body 71 is directed in the longitudinal direction (Y1-Y2 direction). The length dimension L8 of the third soft magnetic body 71 is set in the longitudinal direction of the magnetoresistive effect elements 2 and 3 and the fixed resistance element forming region 80 located in the lateral direction (X1-X2 direction) of the third soft magnetic body 70. It is formed with the length which opposes the whole region. That is, the longitudinal dimension (Y1-Y2 direction) of the magnetoresistive effect elements 2 and 3 is L6 (see also FIG. 23), and the longitudinal dimension (Y1-Y2 direction) of the fixed resistor element formation region 80. Is L9, but the length dimension L8 of the third soft magnetic body 71 is not less than the length dimension L6 of the magnetoresistive effect elements 2 and 3, and is not less than the length dimension L9 of the fixed resistance element forming region 80.

  In the embodiment shown in FIG. 5, the third soft magnetic body 71 has both ends in the longitudinal direction (Y1-Y2 direction) of the magnetoresistive effect elements 2 and 3 and the longitudinal direction (Y1-Y2 direction) of the fixed resistance element forming region 80. It has the extension part 71a extended in the vertical direction from both ends.

  The third soft magnetic body 71 is on the same insulating layer 17 as the second soft magnetic body 18 constituting the magnetoresistive effect elements 2 and 3 and the first soft magnetic body 23 constituting the fixed resistance elements 4 and 5 (FIG. 1). (See (b)).

  The third soft magnetic bodies 70 and 71 are formed into a thin film by sputtering or plating, for example. The third soft magnetic bodies 70 and 71 are made of NiFe, CoFe, CoFeSiB, CoZrNb, or the like.

  In the present embodiment, as in the embodiment shown in FIGS. 1 and 2, the laminated structure is different between the element portion 12 constituting the magnetoresistive effect elements 2 and 3 and the element portion 12 constituting the fixed resistance elements 4 and 5. However, since the same element portion 12 (the order of lamination and film thickness is equal) is used for the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5, the magnetoresistive effect elements 2 and 3 are fixed. The resistance change temperature coefficient (TCR) of the resistance elements 4 and 5 can be made equal. Moreover, since the resistance value is the same, a patterning process for matching the resistance value is not necessary. Further, the first soft magnetic body 23, the second soft magnetic body 18, and the third soft magnetic body 70 shown in FIGS. 1 and 2 can be formed in the same process.

  4 and 5, the fixed resistance elements 4 and 5 and the magnetoresistive effect elements 2 and 3 are arranged to face each other in a substantially horizontal direction (X1-X2 direction). The first soft magnetic body 23 and the second soft magnetic body 18 constituting the magnetoresistive effect elements 2 and 3 are both formed in a shape that is long in the lateral direction (X1-X2 direction).

  In such a form, the amplification effect of the external magnetic field from the lateral direction (X1-X2 direction) by the first soft magnetic body 23 and the second soft magnetic body 18 is increased, and the magnetoresistance effect elements 2 and 3 and the fixed resistance element 4 and 5 are inherently insensitive to external magnetic fields from the lateral direction, that is, the resistance change rate (MR ratio) per unit magnetic field may increase. In the embodiment shown in FIG. 4, in order to suppress such a large increase effect of the external magnetic field from the lateral direction, the magnetoresistive effect elements 2, 3 and the fixed resistance elements 4, 5 are not illustrated. In the embodiment shown in FIG. 5, third soft magnetic bodies 70 and 71 are disposed between the magnetoresistive effect elements 2 and 3 and the fixed resistance element forming region 80, respectively.

  As shown in FIGS. 4 and 5, the third soft magnetic bodies 70 and 71 are formed in a shape that is long in the longitudinal direction (Y1-Y2 direction). In addition, the third soft magnetic bodies 70 and 71 have length dimensions facing the entire longitudinal direction of both the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 facing in the lateral direction (X1-X2 direction). It is formed as described above.

  Thus, unlike the first soft magnetic body 23 and the second soft magnetic body 18, the third soft magnetic bodies 70 and 71 have a shape anisotropy in which the easy axis direction is the longitudinal direction (Y1-Y2 direction). Is granted. As a result, the amplification effect of the external magnetic field from the lateral direction (X1-X2 direction) can be suppressed by the third soft magnetic bodies 70 and 71, and the first soft magnetic body 23 and the second soft magnetism with respect to the external magnetic field from the lateral direction. Reduction of the magnetic shielding effect of the body 18 can be suppressed.

  The magnetic sensor 1 in this embodiment is used as a geomagnetic sensor (magnetic sensor module) shown in FIG. 24, for example. In each of the X-axis magnetic field detection unit 50, the Y-axis magnetic field detection unit 51, and the Z-axis magnetic field detection unit 52, a sensor unit of a bridge circuit shown in FIG. 23 is provided. In the X-axis magnetic field detection unit 50, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 of the element unit 12 of the magnetoresistive effect elements 2 and 3 faces the X direction that is the sensitivity axis, and the Y-axis magnetic field detection unit In 51, the fixed magnetization direction (P direction) of the pinned magnetic layer 34 of the element portion 12 of the magnetoresistive effect elements 2 and 3 faces the Y direction which is the sensitivity axis, and in the Z-axis magnetic field detector 52, the magnetoresistive effect The pinned magnetization direction (P direction) of the pinned magnetic layer 34 of the element portion 12 of the elements 2 and 3 faces the Z direction that is the sensitivity axis.

  The X-axis magnetic field detection unit 50, the Y-axis magnetic field detection unit 51, the Z-axis magnetic field detection unit 52, and the integrated circuit (ASIC) 54 are all provided on the base 53. The formation surfaces of the magnetoresistive elements 2 and 3 of the X-axis magnetic field detector 50 and the Y-axis magnetic field detector 51 are both XY planes. Is formed on the X-Z plane, and the formation surface of the magnetoresistive effect elements 2 and 3 of the Z-axis magnetic field detection unit 52 is the magnetoresistive effect element 2 of the X-axis magnetic field detection unit 50 and the Y-axis magnetic field detection unit 51. , 3 are orthogonal to the formation surface.

  In the present embodiment, two or more detection units among the X-axis magnetic field detection unit 50, the Y-axis magnetic field detection unit 51, and the Z-axis magnetic field detection unit 52 can be provided on the base 53. Each detector can appropriately shield the magnetic field from the direction orthogonal to the sensitivity axis direction, and can appropriately detect the geomagnetism from the sensitivity axis direction of each detector.

  In addition to the configuration of FIG. 24, a module in which a geomagnetic sensor and an acceleration sensor are combined can be used.

FIG. 1A is a plan view of the magnetoresistive effect element and fixed resistance element of the magnetic sensor according to the first embodiment, and FIG. 1B is a height direction along the line CC shown in FIG. A partial cross-sectional view cut in the (Z direction in the figure) and seen from the arrow direction, 2A is a plan view of the magnetoresistive effect element and the fixed resistance element of the magnetic sensor according to the second embodiment, and FIG. 2B is a diagram for explaining that the element arrangement of FIG. 2A is excellent. Schematic diagram of fixed resistance element formation region and magnetic shield range of The top view of the magnetoresistive effect element which improved the form of FIG. 2, and a fixed resistance element, The top view of the magnetoresistive effect element and fixed resistance element of the magnetic sensor in 3rd Embodiment, The top view of the magnetoresistive effect element and fixed resistance element of the magnetic sensor in 4th Embodiment, FIG. 6A is a plan view of the magnetoresistive effect element, and FIG. 6B is a portion cut in the height direction (Z direction in the drawing) along the line AA in FIG. Sectional view, 7A is a plan view of a magnetoresistive element of a magnetic sensor different from that in FIG. 6, and FIG. 7B is a height direction (Z direction in the figure) along the line AA in FIG. ) And a partial cross-sectional view as seen from the direction of the arrow, FIG. 8A is a plan view of a magnetoresistive element of a magnetic sensor different from those in FIGS. 6 and 7, and FIG. 8B is a height direction along the line AA in FIG. A partial cross-sectional view as seen from the direction of the arrow cut in the Z direction shown in the figure, FIG. 6 is a plan view of a magnetoresistive effect element different from those shown in FIGS. 10A is a plan view of a magnetoresistive effect element different from those shown in FIGS. 6 to 9, and FIG. 10B is a height direction (Z direction shown) along the line AA in FIG. ) And a partial cross-sectional view as seen from the direction of the arrow, FIG. 6 is a plan view of a magnetoresistive effect element different from FIG. FIG. 6 is a plan view of a magnetoresistive effect element different from those shown in FIGS. FIG. 13 is a plan view showing a portion of a magnetoresistive effect element different from those shown in FIGS. The partial expanded sectional view which cut | disconnected in the height direction (Z direction shown in figure) along the DD line | wire shown in FIG. 13, and was seen from the arrow direction, A partially enlarged plan view showing a part of the element part in the form of a preferable magnetoresistive element, 16A is a plan view of a magnetoresistive effect element different from those shown in FIGS. 6 to 12, and FIG. 16B is a height direction (Z direction shown) along the line AA in FIG. 16A. A partial cross-sectional view as seen from the direction of the arrow FIG. 6 is a plan view of a magnetoresistive effect element different from FIG. 18A is a plan view of the fixed resistance element, and FIG. 18B is a sectional view taken along the line BB in FIG. 18A in the height direction (Z direction in the drawing) and viewed from the arrow direction. Partial sectional view, The top view of the fixed resistive element different from FIG. The top view of the fixed resistive element different from FIG.18 and FIG.19, The figure for demonstrating the relationship between the fixed magnetization direction of the fixed magnetic layer of a magnetoresistive effect element, the magnetization direction of a free magnetic layer, and an electrical resistance value, Sectional drawing which shows the cut surface at the time of cut | disconnecting a magnetoresistive effect element from a film thickness direction, A circuit diagram of the magnetic sensor of the present embodiment, A perspective view of the magnetic sensor module, Plan view of magnetoresistive effect element and fixed resistance element of conventional magnetic sensor,

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Magnetic sensor 2, 3 Magnetoresistance effect element 4, 5 Fixed resistance element 6 Bridge circuit 7 Input terminal 8 Ground terminal 9 Differential amplifier 10 External output terminal 11 Integrated circuit 12 Element part 13 Connection electrode part 14 Output extraction part 16 Substrate 17 Insulating layers 18, 24 First soft magnetic body 23, 25 Second soft magnetic body 33 Antiferromagnetic layer 34 Fixed magnetic layer 36 Free magnetic layer 37 Protective layer 50 X-axis magnetic field detector 51 Y-axis magnetic field detector 52 Z-axis magnetic field Sensor 60 Permanent magnet layer 61 Element coupling body 62 Connection layer 63 Recess 64 Low resistance layers 70, 71 Third soft magnetic bodies 80, 81 Fixed resistance element formation regions L1, L3 Element length L2 (of the first soft magnetic body) Length dimension L4 (second soft magnetic body) length dimension W1, W3 Element width W2 (first soft magnetic body) width dimension W4 (second soft magnetic body) width dimension

Claims (15)

A magnetic sensor comprising a magnetoresistive effect element and a fixed resistance element,
The magnetoresistive element includes an element part having a pinned magnetic layer whose magnetization direction is fixed, and a free magnetic layer which is laminated on the pinned magnetic layer via a nonmagnetic layer and changes the magnetization direction upon receiving an external magnetic field The fixed magnetization direction of the fixed magnetic layer is a sensitivity axis direction,
The fixed resistance element includes an elongated element portion having an element length L1 longer than an element width W1, and the element portion constituting the fixed resistance element includes the fixed magnetic layer and the fixed magnetic layer. And the free magnetic layer laminated via the non-magnetic layer,
A first soft magnetic body that exhibits a magnetic shielding effect with respect to the element portion with a gap from an element portion that constitutes the fixed resistance element is laminated,
The magnetic sensor according to claim 1, wherein the fixed resistance element is disposed at a position that does not face the magnetoresistive effect element in a longitudinal direction parallel to the sensitivity axis direction.   2. The magnetic sensor according to claim 1, wherein at least a part of the fixed resistance element is disposed opposite to the magnetoresistive element in a lateral direction orthogonal to the longitudinal direction.   The magnetic sensor according to claim 2, wherein the magnetoresistive effect element and the fixed resistance element are arranged in a line in the lateral direction.   The magnetic sensor according to claim 1, wherein the plurality of fixed resistance elements are arranged substantially in series in the vertical direction.   The magnetic sensor according to claim 4, wherein a fixed resistance element forming region surrounding the plurality of fixed resistance elements and the magnetoresistive effect element are arranged to face each other in a horizontal direction orthogonal to the vertical direction.   The magnetoresistive effect element has a magnetic shielding effect against a magnetic field from a lateral direction that is non-contact with the element portion constituting the magnetoresistive effect element and is orthogonal to a longitudinal direction parallel to the sensitivity axis direction. The magnetic sensor according to claim 1, further comprising a second soft magnetic body to be exhibited. The magnetoresistive effect element has a magnetic shielding effect against a magnetic field from a lateral direction that is non-contact with the element portion constituting the magnetoresistive effect element and is orthogonal to a longitudinal direction parallel to the sensitivity axis direction. A second soft magnetic body to be exhibited is provided, and both the second soft magnetic body and the first soft magnetic body constituting the fixed resistance element are formed in a shape that is long in the lateral direction;
In a region between the magnetoresistive effect element and the fixed resistance element, a non-contact third soft magnetic body is disposed on both the magnetoresistive effect element and the fixed resistance element, and the third soft magnetic body is 6. The magnetism according to claim 2, 3 or 5, wherein the magnetism is formed in a shape that is long in the vertical direction and has a length that is equal to or greater than the length of the magnetoresistive effect element and the fixed resistance element facing the entire area in the vertical direction. Sensor.   A plurality of the element portions constituting the magnetoresistive effect element are arranged at intervals in the vertical direction, and the end portions of each element portion are connected to form a meander shape. 8. The magnetic sensor according to claim 6, wherein the second soft magnetic body is formed in a non-contact manner with each of the element portions on either side in the vertical direction, directly above, or directly below. A plurality of the element portions constituting the fixed resistance element are arranged at intervals in the element width direction, and the end portions of each element portion are connected to form a meander shape,
The magnetic sensor according to any one of claims 1 to 8, wherein the first soft magnetic body is individually arranged for each element portion constituting the fixed resistance element.   10. The magnetic sensor according to claim 9, wherein the first soft magnetic body is further disposed outside an outer surface of the element portion located on both sides in the element width direction. A plurality of the element portions constituting the fixed resistance element are arranged at intervals in the element width direction, and the end portions of each element portion are connected to form a meander shape,
9. The magnetic sensor according to claim 1, wherein one of the first soft magnetic bodies is formed to have a size that covers all of the element portions constituting the fixed resistance element.   The first soft magnetic body includes an extension portion having a width dimension W2 in the same direction as the element width W1 larger than the element width W1 and extending in the element width direction from both sides of the element width of the element portion. A length dimension L2 in the same direction as the element length L1 is larger than the element length L1, and includes an extending part extending in the element length direction from both sides of the element length direction of the element part, and The magnetic sensor according to claim 1, wherein the length dimension L2 is larger than the width dimension W2.   The magnetic sensor according to any one of claims 1 to 12, wherein each element portion constituting the magnetoresistive effect element and the fixed resistance element has the same stacking order and thickness.   The magnetic sensor according to any one of claims 1 to 13, wherein a permanent magnet layer for supplying a bias magnetic field from a lateral direction orthogonal to the longitudinal direction is provided to an element portion constituting the magnetoresistive effect element.   15. A plurality of magnetic sensors according to claim 1, wherein each magnetic sensor is arranged so that sensitivity axes of a set of magnetoresistive effect elements are orthogonal to each other among at least the plurality of magnetic sensors. A magnetic sensor module.

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