JP2009162540A - Magnetometric sensor and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a magnetometric sensor for equalizing each resistance change temperature coefficient (TCR) of a fixed resistance element and a magnetoresistance effect element furthermore in comparison with hitherto, and manufacturing the fixed resistance element more easily than hitherto, for example, agreement of each resistance value is not required. <P>SOLUTION: The fixed resistance elements 4, 5 have the same element part 12 as the magnetoresistance effect elements 2, 3, and a fixed magnetization direction of a fixed magnetic layer of the element part 12 is faced to an element length direction (Y-direction). An extension part having a width dimension W2 larger than an element width W1 of the element part 12, and extending from both sides of the element width of the element part 12 to the element width direction is provided at an interval on the upside of the element part 12 constituting the fixed resistance element, and an extension part having a length dimension L2 larger than an element length L1, and extending from both sides of the element length direction of the element part 12 to the element length direction is provided, and the first soft magnetic body 23 whose length dimension L2 is larger than the width dimension W2 is arranged. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a magnetic sensor using a magnetoresistive effect element used as, for example, a geomagnetic sensor, and a manufacturing method thereof.

  The magnetic sensor is provided with a bridge circuit composed of a magnetoresistive effect element and a fixed resistance element. The magnetoresistive element has a laminated structure of a pinned magnetic layer whose magnetization direction is fixed in one direction and a free magnetic layer formed on the pinned magnetic layer through a nonmagnetic layer.

  Conventionally, the fixed resistance element has been formed using a resistance material different from that of the magnetoresistive effect element. As a result, there arises a problem that the resistance change temperature coefficient (TCR) is different between the magnetoresistive effect element and the fixed resistance element. Further, after measuring the resistance values of the magnetoresistive effect element and the fixed resistance element, for example, it is necessary to pattern the fixed resistance element to adjust the midpoint potential, which complicates the manufacturing process.

  On the other hand, the fixed resistance element is formed with a laminated structure of a fixed magnetic layer / free magnetic layer / nonmagnetic layer by replacing the free magnetic layer and the nonmagnetic layer constituting the magnetoresistive effect element, and fixed to the magnetoresistive effect element. It was considered that the resistance change temperature coefficient (TCR) of the magnetoresistive effect element and the fixed resistance element can be made equal by matching the constituent layers with the resistance element.

However, the magnetoresistive effect element and the fixed resistance element cannot be formed in the same manufacturing process, and eventually the resistance change temperature coefficient (TCR) cannot be matched with high accuracy, or the resistance change temperature coefficient (TCR). ) Has a large variation. Moreover, the resistance values of the magnetoresistive effect element and the fixed resistance element are also likely to be different, and a patterning step for adjusting the midpoint potential is required as in the prior art.
JP 2005-183614 A

  Therefore, the present invention is to solve the above-described conventional problems, and the resistance change temperature coefficient (TCR) of the fixed resistance element and the magnetoresistive effect element can be made equal to that of the conventional one, and the resistance value need not be adjusted. An object of the present invention is to provide a magnetic sensor that can manufacture the fixed resistance element more easily than in the past.

The present invention is a magnetic sensor comprising a magnetoresistive effect element and a fixed resistance element connected in series to the magnetoresistive effect element via an output extraction portion,
The magnetoresistive element includes an element part having a pinned magnetic layer whose magnetization direction is fixed, and a free magnetic layer which is laminated on the pinned magnetic layer via a nonmagnetic layer and changes the magnetization direction upon receiving an external magnetic field With
The fixed resistance element includes an elongated element portion having an element length L1 longer than an element width W1, and the element portion constituting the fixed resistance element includes the fixed magnetic layer and the fixed magnetic layer. And the free magnetic layer laminated via the nonmagnetic layer, and the pinned magnetization direction of the pinned magnetic layer is directed to the element length direction,
A width dimension W2 in the same direction as the element width W1 is larger than the element width W1 and spaced from both sides of the element width of the element section in the element width direction at a distance from the element portion constituting the fixed resistance element. An extension portion is provided, and a length dimension L2 in the same direction as the element length L1 is larger than the element length L1 and extends from both sides of the element portion in the element length direction in the element length direction. A first soft magnetic body having an extending portion that protrudes and having a length dimension L2 larger than the width dimension W2 is laminated.

  With the above configuration, the resistance change temperature coefficient (TCR) of the fixed resistance element and the magnetoresistive effect element can be made equal as compared with the prior art. In addition, by disposing the first soft magnetic body above the element portion constituting the fixed resistance element, it is possible to appropriately shield the external magnetic field flowing into the element portion, and to achieve fixed resistance. In addition, the fixed resistance element can be manufactured more easily than in the prior art because it is not necessary to match the resistance value.

  In the present invention, the magnetoresistive effect element has an elongated element portion having an element length longer than an element width, and the fixed magnetization direction of the fixed magnetic layer is directed to the element width direction. Each element portion is arranged such that the element length direction of the element portion constituting the magnetoresistive effect element and the element length direction of the element portion constituting the fixed resistance element are orthogonal to each other, and the magnetoresistive effect It is preferable that the fixed magnetization direction of the fixed magnetic layer constituting the element and the fixed magnetization direction of the fixed magnetic layer constituting the fixed resistance element are oriented in the same direction. Thereby, the said fixed resistance element can be manufactured more easily.

  In the present invention, it is preferable that the order of lamination and the film thickness of each element portion constituting the magnetoresistive effect element and the fixed resistance element are equal. Thereby, it can adjust with high precision so that the resistance change temperature coefficient (TCR) of a fixed resistive element and a magnetoresistive effect element may correspond.

Further, in the present invention, a plurality of the element portions constituting the fixed resistance element are arranged at intervals in the element width direction, and the end portions of each element portion are connected to form a meander shape,
The first soft magnetic body can be individually arranged for each element portion constituting the fixed resistance element.

  At this time, it is preferable that the first soft magnetic body is further disposed outside both outer surfaces of the element portion located on both sides in the element width direction. Thereby, it can suppress more effectively that a magnetic field penetrate | invades in the element part which comprises the said magnetoresistive effect element, and can improve the performance as fixed resistance.

Alternatively, in the present invention, a plurality of the element parts constituting the fixed resistance element are arranged at intervals in the element width direction, and the ends of each element part are connected to form a meander shape,
One said 1st soft-magnetic body can be made into the structure currently formed in the magnitude | size which covers the upper part of all the said element parts which comprise the said fixed resistance element.

In the present invention, a plurality of element portions constituting the magnetoresistive effect element are arranged at intervals in the element width direction, and the end portions of each element portion are connected to form a meander shape. The second soft magnetic body having a width dimension W3 in the same direction as the element width W1 and a length dimension L3 in the same direction as the element length direction is either on either side, directly above or directly below the portion. Formed without contact with the element,
The length L3 of the second soft magnetic body is longer than the element length L1, and the soft magnetic body extends from both sides of the element portion in the element length direction in the element length direction. It can be made a structure equipped with. For example, although the magnetic sensor of the present invention is used as a geomagnetic sensor, the above configuration can appropriately shield an external magnetic field flowing from the direction orthogonal to the sensitivity axis with respect to the magnetoresistive effect element, and can be effectively used as a geomagnetic sensor.

Further, the present invention relates to a method for manufacturing a magnetic sensor comprising a magnetoresistive effect element and a fixed resistance element connected in series to the magnetoresistive effect element via an output extraction portion.
A laminated film having a pinned magnetic layer whose magnetization direction is fixed and a free magnetic layer whose magnetization direction is changed by receiving an external magnetic field laminated on the pinned magnetic layer via a nonmagnetic layer is formed on a substrate. ,
Patterning the laminated film located in the fixed resistance element forming region to form an elongated element portion in which the element length L1 is longer than the element width W1;
Forming an element portion having the pinned magnetic layer in the magnetoresistive element forming region and the free magnetic layer laminated on the pinned magnetic layer via the nonmagnetic layer;
A step of fixedly magnetizing the fixed magnetic layer of the element portion constituting the fixed resistance element in the element length direction, and a fixed magnetization of the fixed magnetic layer of the element portion constituting the magnetoresistive effect element in the element width direction;
Forming electrode portions on both sides of the element portion in the element length direction;
Forming an insulating layer on the element portion;
A width dimension W2 in the same direction as the element width W1 is larger than the element width W1 via the insulating layer on the element portion constituting the fixed resistance element, and the element width direction from both sides of the element width of the element portion And a length dimension L2 in the same direction as the element length L1 is larger than the element length L1 from both sides of the element length direction in the element length direction. Forming a first soft magnetic body that includes an extending portion that extends and the length dimension L2 is greater than the width dimension W2.
It is characterized by having.

  According to the above manufacturing method, the fixed resistance can be appropriately and easily formed by forming the first soft magnetic body above the element portion including the fixed magnetic layer, the nonmagnetic layer, and the free magnetic layer. Therefore, the fixed resistance element can be easily manufactured as compared with the conventional case. Also, the resistance change temperature coefficient (TCR) of the magnetoresistive effect element and the fixed resistance element can be easily matched as compared with the conventional case.

In the present invention, the element part constituting the magnetoresistive effect element is formed in an elongated shape in which the laminated film located in the magnetoresistive effect element forming region is patterned and the element length is longer than the element width. It has been
Comprising fixed magnetization of the pinned magnetic layer of the laminated film,
When patterning each element part from the laminated film, the fixed magnetization direction of the fixed magnetic layer of the element part constituting the magnetoresistive effect element faces the element width direction, and the fixed magnetism of the element part constituting the fixed resistor element The element constituting the fixed resistance element in such a direction that the element length direction of the element portion constituting the magnetoresistive effect element is orthogonal to the fixed magnetization direction so that the fixed magnetization direction of the layer faces the element length direction It is preferable to form a pattern with the element length direction of the portion directed to the fixed magnetization direction.

Alternatively, in the present invention, the element portion constituting the magnetoresistive effect element has an elongated shape formed by patterning the laminated film located in the magnetoresistive effect element forming region so that the element length is longer than the element width. Formed,
Each element portion is patterned from the laminated film so that the element length direction of the element portion constituting the magnetoresistive effect element and the element length direction of the element portion constituting the fixed resistance element are orthogonal to each other,
In the fixed magnetization step of the same fixed magnetic layer, the fixed magnetic layer of the element part constituting the magnetoresistive effect element is fixedly magnetized in the element width direction, and the fixed magnetic layer of the element part constituting the fixed resistance element is element length It is preferable to perform fixed magnetization in the direction.

  According to the above, since the element part constituting the magnetoresistive effect element and the element part constituting the fixed resistance element can be patterned in the same process from the laminated film, there is no need for a process for adjusting the resistance value. Can be manufactured more easily than before. In addition, it is not necessary to separately perform the fixed magnetization process for the fixed magnetic layer of the magnetoresistive effect element and the fixed magnetization process for the fixed magnetic layer of the fixed resistance element, and the fixed resistance element can be manufactured more easily and appropriately.

Further, in the present invention, a plurality of the element parts constituting the fixed resistance element are arranged at intervals in the element width direction, and the ends of each element part are connected to form a meander shape,
The first soft magnetic body can be individually disposed above each element portion constituting the fixed resistance element via an insulating layer.

  At this time, it is preferable to dispose the first soft magnetic body further outside the outer side surfaces of the element portion located on both sides in the element width direction in order to improve the performance as a fixed resistance.

Alternatively, in the present invention, a plurality of the element portions constituting the fixed resistance element are arranged at intervals in the element width direction, and the end portions of each element portion are connected to form a meander shape,
One said 1st soft magnetic body can be formed in the magnitude | size which covers the upper direction of all the said element parts which comprise the said fixed resistance element.

Further, in the present invention, a plurality of the element portions constituting the magnetoresistive effect element are arranged at intervals in the element width direction, and the end portions of each element portion are connected to form a meander shape. ,
In the same step as the step of forming the first soft magnetic layer, the width dimension in the same direction as the element width W1 is W3 on either side of or directly above each element portion constituting the magnetoresistive element. Forming a second soft magnetic body having a length dimension L3 in the same direction as the element length direction through an insulating layer;
At this time, the length L3 of the second soft magnetic body is formed longer than the element length L1, and the second soft magnetic body is further moved from both sides of the magnetoresistive element in the element length direction. When formed with an extending portion extending in the length direction, a magnetic sensor having appropriate sensitivity only for an external magnetic field from the sensitivity axis direction can be manufactured.

  Also, the first soft magnetic body may not be formed above the element portion, or the first soft magnetic body may be formed below the element portion with an insulating layer along with the upper portion of the element portion. It is.

  According to the present invention, the resistance change temperature coefficient (TCR) of the fixed resistance element and the magnetoresistive effect element can be made equal to the conventional one, and the fixed resistance element is simpler than the conventional one, such as no need to match the resistance value. It is possible to provide a magnetic sensor that can be manufactured.

  1A and 1B are views showing a part of a magnetoresistive effect element and a fixed resistance element of the magnetic sensor according to the first embodiment ((a) is a partial plan view, and (b) is taken along line AA in (a)). (C) is a partial cross-sectional view cut in the height direction (Z direction in the figure) and viewed from the arrow direction), (c) is cut in the height direction (Z direction in the figure) along the BB line in (a). 2 is a partial plan view showing a part of the magnetoresistive effect element and the fixed resistance element of the magnetic sensor in the second embodiment, and FIG. 3 is a magnetoresistive of the magnetic sensor in the third embodiment. FIG. 4 is a partial plan view showing portions of the effect element and the fixed resistance element, and FIG. 4 is a diagram for explaining the relationship between the fixed magnetization direction of the fixed magnetic layer and the magnetization direction of the free magnetic layer of the magnetoresistive effect element and the electric resistance value. Fig. 5 shows cutting when the magnetoresistive element is cut from the film thickness direction. Sectional view, FIG. 6 shows a shows a circuit diagram of a magnetic sensor of the present embodiment, it is.

  The magnetic sensor 1 provided with the magnetoresistive effect element and the fixed resistance element in the present embodiment is used as a geomagnetic sensor mounted on a mobile device such as a mobile phone.

  As shown in FIG. 6, the magnetic sensor 1 includes a sensor unit 6 in which magnetoresistive elements 2 and 3 and fixed resistor elements 4 and 5 are bridge-connected, and an input terminal electrically connected to the sensor unit 6. 7, an integrated circuit (IC) 11 having a ground terminal 8, a differential amplifier 9, an external output terminal 10, and the like.

  As shown in FIG. 1, the magnetoresistive effect elements 2 and 3 have a plurality of element portions 12 that are formed in an element length L1 longer than the element width W1 and are elongated in the X direction in the figure, and are orthogonal to the X direction. They are arranged in parallel in the Y direction with a predetermined interval, and the end portions of the respective element portions 12 are electrically connected by the connection electrode portions 13 to form a meander shape. An electrode portion 15 connected to the input terminal 7, the ground terminal 8, or the output extraction portion 14 is connected to one of the element portions 12 at both ends formed in a meander shape.

  All the element portions 12 constituting the magnetoresistive effect elements 2 and 3 have the same laminated structure shown in FIG. FIG. 5 shows a cut surface cut in the film thickness direction from the direction parallel to the element width W1.

  The element portion 12 is formed by laminating an antiferromagnetic layer 33, a pinned magnetic layer 34, a nonmagnetic layer 35, and a free magnetic layer 36 in this order, and the surface of the free magnetic layer 36 is covered with a protective layer 37. Yes. The element unit 12 is formed by sputtering, for example.

  The antiferromagnetic layer 33 is made of an antiferromagnetic material such as an Ir—Mn alloy (iridium-manganese alloy). The pinned magnetic layer 34 is formed of a soft magnetic material such as a Co—Fe alloy (cobalt-iron alloy). The nonmagnetic layer 35 is made of Cu (copper) or the like. The free magnetic layer 36 is made of a soft magnetic material such as a Ni—Fe alloy (nickel-iron alloy). The protective layer 37 is a Ta (tantalum) layer. In the above configuration, the nonmagnetic layer 35 is a giant magnetoresistive effect element (GMR element) formed of a nonmagnetic conductive material such as Cu, but a tunnel type magnetoresistive effect element (TMR element) formed of an insulating material such as Al2O3. ).

  In the element portion 12, the magnetization direction of the fixed magnetic layer 34 is fixed by an exchange coupling magnetic field (HeX) generated between the antiferromagnetic layer 33 and the fixed magnetic layer 34. As shown in FIGS. 1 and 5, the pinned magnetization direction (P direction) of the pinned magnetic layer 34 faces the element width W1 direction (Y direction). That is, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 is orthogonal to the element length direction (longitudinal direction) of the element unit 12.

  On the other hand, the magnetization direction (F direction) of the free magnetic layer 36 varies toward the direction of the external magnetic field.

  As shown in FIG. 4, the external magnetic field Y1 acts from the same direction as the fixed magnetization direction (P direction) of the fixed magnetic layer 34, and the magnetization direction (F direction) of the free magnetic layer 36 faces the external magnetic field Y1 direction. Then, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 and the magnetization direction (F direction) of the free magnetic layer 36 approach each other, and the electric resistance value decreases.

  On the other hand, as shown in FIG. 4, the external magnetic field Y2 acts from the direction opposite to the fixed magnetization direction (P direction) of the fixed magnetic layer 34, and the magnetization direction (F direction) of the free magnetic layer 36 changes to the external magnetic field Y2 direction. , The fixed magnetization direction (P direction) of the fixed magnetic layer 34 and the magnetization direction (F direction) of the free magnetic layer 36 approach antiparallel, and the electrical resistance value increases.

  As shown in FIG. 1B, the magnetoresistive elements 2 and 3 are formed on a substrate 16. The magnetoresistive elements 2 and 3 are covered with an insulating layer 17 such as Al2O3 or SiO2. The space between the element portions 12 constituting the magnetoresistive effect elements 2 and 3 is also filled with the insulating layer 17. The insulating layer 17 is formed by sputtering, for example.

  As shown in FIG. 1B, the upper surface of the insulating layer 17 is formed on a flat surface by using, for example, a CMP technique. However, the upper surface of the insulating layer 17 may be an uneven surface following the step between the element portion 12 and the substrate 16.

  As shown in FIGS. 1A and 1B, a second soft magnetic body 18 is provided via an insulating layer 17 directly above each element portion 12 constituting the magnetoresistive effect elements 2 and 3. . The second soft magnetic body 18 is formed into a thin film by sputtering or plating, for example. The second soft magnetic body 18 is made of NiFe, CoFe, CoFeSiB, CoZrNb, or the like. The width dimension W3 of the second soft magnetic body 18 is smaller than the element width W1 of the element portion 12. In addition, the length dimension L3 of the second soft magnetic body 18 is longer than the element length L1 of the element section 12, and the second soft magnetic body 18 includes the element section 12 as shown in FIG. Extending portions 18a extending in the element length direction from both sides in the element length direction (X direction).

  Although not shown, the second soft magnetic body 18 and the second soft magnetic body 18 are covered with an insulating protective layer.

  As shown in FIG. 1A, the fixed resistance elements 4 and 5 connected in series to the magnetoresistive effect elements 2 and 3 via the output extraction section 14 also include the same element section 12 as the magnetoresistive effect elements 2 and 3. . In other words, the stacked structure described in FIG. 5 is provided, the element width is W1, and the element length is L1. Further, the end portions of the element portions 12 constituting the fixed resistance elements 4 and 5 are connected to each other through the connection electrode portion 13 and have a meander shape.

  The meander shape of the fixed resistance elements 4 and 5 matches the shape obtained by rotating the meander shape of the magnetoresistive effect elements 2 and 3 by 90 ° counterclockwise. As shown in FIG. 1C, the fixed resistance elements 4 and 5 are also formed on the substrate 16 in the same manner as the magnetoresistance effect elements 2 and 3. The fixed resistance elements 4 and 5 are also covered with an insulating layer 17 covering the magnetoresistive effect elements 2 and 3, and a first soft layer is interposed above the fixed resistance elements 4 and 5 via the insulating layer 17. A magnetic body 23 is arranged.

  The first soft magnetic body 23 has a width dimension W2 in the same direction (X direction) as the element width W1 constituting the fixed resistance elements 4 and 5, and a length in the same direction (Y direction) as the element length L1. It is formed with a dimension L2. The width dimension W2 is larger than the element width W1, and the first soft magnetic body 23 includes extending portions 23a extending in the element width direction from both sides of the element width of the element portion 12. The length dimension L2 is larger than the element length L1, and the first soft magnetic body 23 extends in the element length direction from both sides of the element portion 12 in the element length direction (Y direction). The extending part 23b is provided. As shown in FIG. 1A, the length dimension L2 is larger than the width dimension W2. That is, the first soft magnetic body 23 is formed in an elongated shape in the Y direction in the figure.

  As described above, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 of the magnetoresistive effect elements 2 and 3 is oriented in the element width direction (Y direction), but the fixed resistance elements 4 and 5 are fixed. The fixed magnetization direction (P direction) of the magnetic layer 34 is oriented in the element length direction (Y direction). In the form of FIG. 1, since the element portion 12 constituting the magnetoresistive effect elements 2 and 3 and the element portion 12 constituting the fixed resistance elements 4 and 5 are orthogonal to each other, The fixed magnetization direction (P direction) of the fixed magnetic layer 34 and the fixed magnetization direction (P direction) of the fixed magnetic layer 34 of the fixed resistance elements 4 and 5 coincide with each other. In both the forms of FIG. 1, the fixed magnetization direction (P direction) is the upward direction (Y direction) of the drawing.

Each dimension will be described.
The element width W1 of the element part 12 which comprises the said magnetoresistive effect elements 2 and 3 exists in the range of 5-8 micrometers (refer Fig.1 (a)). Moreover, the element width W1 of the element part 12 which comprises the fixed resistance elements 4 and 5 is about 2-6 micrometers when using it as a magnetic sensor. The element length L1 of the element unit 12 is in the range of 60 to 100 μm (see FIG. 1A). Moreover, the film thickness T1 of the element portion 12 is in the range of 200 to 300 mm (see FIG. 1B). The width dimension W3 of the second soft magnetic body 18 is narrower than W1 and within a range of 2 to 6 μm when used as a geomagnetic sensor (see FIG. 1A). The aspect ratio (element length L1 / element width W1) of the element portion 12 is 10 or more when used as a geomagnetic sensor. The aspect ratio (length dimension L3 / width dimension W3) of the second soft magnetic body 18 is equal to or greater than the aspect ratio of the element portion 12 constituting the magnetoresistive effect elements 2 and 3. The length L3 of the second soft magnetic body 18 is in the range of 80 to 200 μm (see FIG. 1A). The film thickness T2 of the second soft magnetic body 18 is in the range of 2000 to 10,000 mm (see FIG. 1B).

  A distance (distance in the Y direction) T3 between the second soft magnetic bodies 18 is 6 to 10 μm (see FIG. 1B). A distance T5 in the height direction (Z direction) between the second soft magnetic body 18 and the element portion 12 is 0.1 to 1 μm (see FIG. 1B).

  The width dimension W2 of the first soft magnetic body 23 is 6 to 10 μm (element width or more) (see FIG. 1A). The length L2 of the first soft magnetic body 23 is 80 to 200 μm (see FIG. 1A). The aspect ratio (length dimension L2 / width dimension W2) of the first soft magnetic body 23 is 10 or more. The distance between the first soft magnetic bodies 23 (distance in the X direction) T4 is 2 μm or more (see FIG. 1C).

  The film thickness of the first soft magnetic body 23 is the same as the film thickness T2 of the second soft magnetic body 18 and extends in the height direction (Z direction) between the first soft magnetic body 23 and the element portion 12. The distance is the same as the distance T5 in the height direction (Z direction) between the second soft magnetic body 18 and the element portion 12.

  In this embodiment, since the same element portion 12 is used for the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5, the resistance change temperature coefficient (TCR) of the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 is used. Can be made equal. Further, since the resistance value is the same, a patterning process for matching the resistance value as in the prior art is not required.

  Further, above the fixed resistance elements 4 and 5, the element portion 12 of the fixed resistance elements 4 and 5 is completely covered in a plan view, and a long and narrow length L2 is formed longer than the width dimension W2. By making the 1 soft magnetic body 23 face each other, the external magnetic field flowing into the element portion 12 constituting the fixed resistance elements 4 and 5 can be appropriately shielded. Further, the magnetic permeability of the first soft magnetic body 23 is larger than the magnetic permeability of the element portion 12. For this reason, most of the external magnetic field flows on the first soft magnetic body 23 side, the external magnetic field flowing into the element part 12 can be very small, and the resistance change in the element part 12 constituting the fixed resistance elements 4 and 5 The rate (MR ratio) can be made very small. When the magnetic sensor 1 shown in FIG. 1 is a geomagnetic sensor, the external magnetic field combining the geomagnetism and the leakage magnetic field generated inside the device is about 5 to 10 Oe. At this time, the resistance change rate ( MR ratio) can be suppressed to 0.2% or less.

  Here, the important point in configuring the fixed resistance elements 4 and 5 is that the fixed magnetization direction (P direction) of the fixed magnetic layer 34 of the element portion 12 configuring the fixed resistance elements 4 and 5 is the element length direction. Further, as described above, the first soft magnetic body 23 disposed above the element portion 12 is sized to completely cover the element portion 12 in a plan view, and in the longitudinal direction of the element portion 12. It is in the point which is formed in the elongated shape. Thereby, both the element part 12 and the first soft magnetic body 23 are given shape anisotropy having the same easy axis direction. Further, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 and the magnetization direction of the free magnetic layer are oriented in the easy magnetization axis direction. With such a configuration, it has been found that a fixed resistance can be appropriately achieved even in experiments to be described later.

  On the other hand, for example, when the fixed magnetization direction (P direction) of the fixed magnetic layer 34 of the element portion 12 constituting the fixed resistance elements 4 and 5 is directed in the element width direction in the same manner as the magnetoresistance effect elements 2 and 3. It has been found from experiments to be described later that the rate of change in resistance (MR ratio) may not be sufficiently small as compared with the structure described above. Further, for example, it has been found from experiments to be described later that even when the first soft magnetic body 23 having a square shape is used, the resistance change rate (MR ratio) may not be reduced.

  In the embodiment shown in FIG. 1, the second soft magnetic body 18 is also provided above the element portion 12 constituting the magnetoresistive effect elements 2 and 3. The second soft magnetic body 18 is formed in the same process as the first soft magnetic body 23. The width dimension W3 of the second soft magnetic body 18 is preferably smaller than the element width W1 of the element portion 12. On the other hand, the length L3 of the second soft magnetic body 18 is formed longer than the element length L1 of the element portion 12, and the second soft magnetic body 18 is formed in the element length direction (longitudinal direction) of the element portion 12. An extending portion 18a extending in the element length direction (longitudinal direction) is provided from both sides. Thus, for example, when a leakage magnetic field acts from the X direction orthogonal to the sensitivity axis direction (Y direction), the leakage magnetic field can be shielded by the second soft magnetic body 18. On the other hand, the sensitivity as a magnetic sensor can be maintained with respect to an external magnetic field (geomagnetism) from the sensitivity axis direction (Y direction), and the magnitude of the electric resistance value varies based on the magnetic field strength of the geomagnetism. The geomagnetism from can be detected properly. The second soft magnetic body 18 exhibits an appropriate magnetic shield with respect to the external magnetic field from the sensitivity axis direction. As a result, the magnetic field strength of the external magnetic field flowing into the element portion 12 constituting the magnetoresistive effect elements 2 and 3 can be apparently reduced (the amplification factor of the magnetic field strength can be reduced to 100% or less), and thus the magnetic saturation. In addition, the linear region (sensitivity region) in which the rate of change in resistance (or electrical resistance value) of the magnetoresistive effect elements 2 and 3 with respect to the change in magnetic field strength can be increased.

  In another embodiment shown in FIG. 2, the first soft magnetic body 23 is integrated. The first soft magnetic body 23 shown in FIG. 2 is formed to have a size that covers the upper part of all the element portions 12 constituting the fixed resistance elements 4 and 5. However, as shown in FIG. 1, the width dimension W2 of the second soft magnetic body 23 shown in FIG. 2 that faces in the element width W1 direction is smaller than the length dimension L2 that faces in the element length L1 direction. In this embodiment, the length dimension of the extending portion from the element portion 12 in the first soft magnetic body 23 is preferably 20 μm or more in both the X direction and the Y direction.

  In the embodiment shown in FIG. 2, the second soft magnetic body 18 is provided on both sides in the element width W <b> 1 direction of the element portions 12 constituting the magnetoresistive effect elements 2 and 3. The element width W1 is 2 to 6 μm, and the element width W3 of the second soft magnetic body 18 is 1 to 6 μm smaller than W1. The second soft magnetic body 18 is disposed on the insulating layer 17 buried between the element portions 12. Even in such a configuration, the leakage magnetic field acting from the X direction orthogonal to the sensitivity axis direction (Y direction) can be shielded by the second soft magnetic body 18, and the external magnetic field (Y direction) from the sensitivity axis direction (Y direction) The sensitivity as a magnetic sensor can be maintained, and the magnitude of the electric resistance value varies based on the magnetic field strength of the geomagnetism, and the geomagnetism from the Y direction can be detected appropriately. The second soft magnetic body 18 exhibits an appropriate magnetic shield with respect to the external magnetic field from the sensitivity axis direction, and the resistance change rate (or electrical resistance value) of the magnetoresistive effect elements 2 and 3 with respect to the change in magnetic field strength. ) Also has an effect of widening a linear region (sensitivity region) in which fluctuates.

  In addition, the first soft magnetic body 23 and the second soft magnetic body 18 cannot be formed in the same process, but the second soft magnetic body 18 is placed directly below the element portion 12 constituting the magnetoresistive effect elements 2 and 3. You may arrange | position at intervals.

  Next, the fixed resistance elements 4 and 5 in the embodiment shown in FIG. 3 have the same shape as the fixed resistance elements 4 and 5 shown in FIG. In FIG. 3, the element portion 1 constituting the magnetoresistive effect elements 2 and 3 and the element portion 12 constituting the fixed resistance elements 4 and 5 are both arranged with the X direction shown in the figure as the element length direction (longitudinal direction). Yes. The fixed magnetization direction (P direction) of the fixed magnetic layer 34 constituting the fixed resistance elements 4 and 5 is the X direction which is the element length direction. In the form shown in FIG. 3 as well, the element portion 12 constituting the fixed resistance elements 4 and 5 can be appropriately fixed resistance by the shielding effect of the first soft magnetic body 23.

  However, in the form of FIG. 3, the fixed magnetization direction (P direction; X direction) of the fixed magnetic layer 34 of the element portion 12 constituting the fixed resistance elements 4 and 5 and the element portion 12 constituting the magnetoresistive effect elements 2 and 3. Since the fixed magnetization direction (P direction; Y direction) of the fixed magnetic layer 34 is different, the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 cannot be fixedly magnetized in the same process. Therefore, in order to fix and magnetize the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 in the same process, the element length of the element portion 12 constituting the magnetoresistive effect elements 2 and 3 as shown in FIG. It is preferable that the vertical direction and the element length direction of the element part 12 constituting the fixed resistance elements 4 and 5 are orthogonal to each other.

  Each of the element parts 12 constituting the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 may be only one, but by providing a plurality of meander shapes, the element resistance can be increased and the power consumption can be reduced. Reduction can be achieved, which is preferable.

  The magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 may be provided one by one. However, as shown in FIG. 6, a bridge circuit is formed, and the output obtained from the output extraction unit 14 is supplied to the differential amplifier 9. By using differential output, the output value can be increased and high-precision magnetic field detection can be performed.

  The formation of the second soft magnetic body 18 is not essential. Whether or not the second soft magnetic body 18 is formed can be determined in accordance with the use application of the magnetic sensor 1 or the like.

  As shown in FIG. 7, when the first soft magnetic body 24 is further positioned outside both outer surfaces 12a of the element portion 12 positioned on both sides in the element width direction constituting the fixed resistance elements 4 and 5, the fixed resistance It is more suitable for conversion. In FIG. 7, the connection electrode part 13 and the electrode part 15 that connect the element parts 12 are not shown. The first soft magnetic body 24 located on the outermost side is formed on the insulating layer 17 in the same manner as the first soft magnetic body 23 located above each element portion 12. FIG. 7 also shows the magnetic field simulation results. In the simulation, an external magnetic field of 5 Oe is applied in the element length direction, and the hatched portion is a region where the magnetic flux density B of the magnetic field is stronger than other regions, specifically, 7.75e-4 (T) or more. Magnetic flux density. As shown in FIG. 7, the region where the magnetic flux density of the magnetic field is strong does not reach the outermost element portion 12.

  On the other hand, as shown in FIG. 8, in the configuration in which the first soft magnetic body 23 is provided only above the element portion 12 (the first soft magnetic body 24 is not provided), the magnetic field of the other region indicated by the oblique lines is greater. It has been found that a region where the magnetic flux density B is strong (specifically, a magnetic flux density of 7.75e-4 (T) or more) tends to reach a part of the element portion 12. Although the embodiment shown in FIG. 8 can be used as a fixed resistance element, the embodiment shown in FIG. 7 can further suppress the resistance change rate (MR ratio). As described above, when the first soft magnetic body 24 is further positioned outside the outer side surfaces 12a of the element portion 12 positioned on both sides in the element width direction constituting the fixed resistance elements 4 and 5, it is more effective. , It becomes difficult for the magnetic field to enter the element portion 12, and the performance as a fixed resistance can be improved.

  Next, the manufacturing method of the magnetic sensor 1 in this embodiment is demonstrated. FIG. 9 is a flowchart showing the manufacturing process. The drawing of FIG. 1 is also used.

  First, in step (1) shown in FIG. 9, a laminated film having the structure shown in FIG. 5 is formed on the entire surface of the substrate 16 shown in FIG.

  Next, in step (2) shown in FIG. 9, an exchange coupling magnetic field (Hex) is generated between the pinned magnetic layer 34 and the antiferromagnetic layer 33 by annealing in a magnetic field, and the pinned magnetic layer 34 is formed. Fixed magnetization in the Y direction.

  Next, in the step (3) shown in FIG. 9, the laminated films located in the magnetoresistive element formation region and the fixed resistance element formation region on the substrate 16 are patterned, and the element is compared with the element width W1. An elongated element portion 12 having a long length L1 is formed. All the laminated films other than the element part 12 are removed by etching. At this time, as shown in FIG. 1A, the element length direction (longitudinal direction) of the element portion 12 constituting the magnetoresistive effect elements 2 and 3 faces the X direction, and the fixed resistance elements 4 and 5 are constituted. Each element portion 12 is patterned so that the element length direction (longitudinal direction) of the element portion 12 faces the Y direction. As a result, the fixed magnetization direction (P direction) of the fixed magnetic layer 34 of the element portion 12 constituting the magnetoresistive effect elements 2 and 3 becomes the element width direction, and the fixed magnetic layer of the element portion 12 constituting the fixed resistance elements 4 and 5 is formed. The fixed magnetization direction (P direction) 34 is the element length direction.

  Next, in the step (4) shown in FIG. 9, the connection electrode portion 13 and the electrode portion 15 shown in FIG. 1A are formed, and the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 are both in a meander shape. To form. Further, an output extraction portion 14 is formed to connect the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 in series.

  Next, in step (5) shown in FIG. 9, an insulating layer 17 is formed on the element portion 12, the connection electrode portion 13, the electrode portion 15, the output extraction portion 14 and the exposed substrate 16 by, for example, sputtering. Form. The upper surface of the insulating layer 17 may be planarized using a CMP technique.

  Next, in step (6) shown in FIG. 9, the first soft magnetic body 23 is placed on the insulating layer 17 at a position facing the element portion 12 constituting the fixed resistance elements 4 and 5 in the height direction. Further, a second soft magnetic body 18 is formed on the insulating layer 17 at a position facing the element portion 12 constituting the magnetoresistive effect elements 2 and 3 in the height direction (FIG. 1A). reference). The first soft magnetic body 23 and the second soft magnetic body 18 are formed by sputtering or plating. First, a soft magnetic material is formed on the entire surface of the insulating layer 17, and then the first soft magnetic material 23 and the second soft magnetic material 18 are patterned by etching, or a resist layer is formed on the insulating layer 17. After forming the extraction pattern of the first soft magnetic body 23 and the second soft magnetic body 18 and forming the soft magnetic body in the extraction pattern, the resist layer is removed.

  Subsequently, after forming an insulating protective layer (not shown) on the first soft magnetic body 23 and the second soft magnetic body 18, in the step (7) shown in FIG. 9, the input terminal 7, the ground terminal 8, and the output Each pad portion such as the terminal 10 (see FIG. 6) is formed.

  In the manufacturing method of the magnetic sensor 1 of the present embodiment described above, the element portion 12 and the fixed resistance elements 4 and 5 constituting the magnetoresistive effect elements 2 and 3 are formed from the laminated film in the same step (3) of FIG. Since the element portion 12 to be patterned can be patterned, a patterning step for adjusting the resistance value is not necessary in a later step. Further, in the same step (6) of FIG. 9, the second soft magnetic body 18 on the magnetoresistive effect elements 2 and 3 side and the first soft magnetic body 23 on the fixed resistance elements 4 and 5 side are formed. Therefore, the fixed resistance elements 4 and 5 can be formed in parallel with the formation of the magnetoresistive effect elements 2 and 3, and the fixed resistance elements 4 and 5 can be manufactured more easily and appropriately than in the past. Further, the resistance change temperature coefficient (TCR) of the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 can be easily matched as compared with the conventional one.

  9 is performed after step (1) in FIG. 9, and then, as shown in step (8) in FIG. 9, the fixed magnetic layer 34 of each element section 12 is fixedly magnetized in the Y direction. Annealing in the magnetic field may be performed.

  In any case, in the manufacturing method described above, the fixed magnetization direction of the fixed magnetic layer 34 of the element portion 12 that constitutes the magnetoresistive effect elements 2 and 3 and the fixed magnetism of the element portion 12 that constitutes the fixed resistance elements 4 and 5. Since the fixed magnetization direction of the layer 34 is the same direction, the fixed magnetization process for the fixed magnetic layer 34 of the element portion 12 constituting the magnetoresistive effect elements 2 and 3 and the element portion 12 constituting the fixed resistance elements 4 and 5. It is not necessary to separately perform the fixed magnetization step for the fixed magnetic layer 34, and the fixed resistance elements 4 and 5 can be manufactured more easily and appropriately.

  In the step (6) of FIG. 9, the first soft magnetic body 23 can be integrally formed as shown in FIG. In the step (6) of FIG. 9, the second soft magnetic body 18 is formed not on the element portion 12 constituting the magnetoresistive elements 2 and 3 but on both sides as shown in FIG. You can also.

  In the above, both the magnetoresistive effect elements 2 and 3 and the element portion 12 constituting the fixed resistance elements 4 and 5 have the same shape. For example, the element width W1 of the element portion 12 constituting the fixed resistance elements 4 and 5; The element width W1 of the element portion 12 constituting the magnetoresistive effect elements 2 and 3 may be different, the element length L1 of the element portion 12 constituting the fixed resistance elements 4 and 5, and the magnetoresistive effect. The element length constituting the elements 2 and 3 may be different. However, in order to easily match the resistance values, it is preferable that the magnetoresistive effect elements 2 and 3 and the element portion 12 constituting the fixed resistance elements 4 and 5 have the same shape.

  Furthermore, in the above description, the stacking order and film thickness of the element portions 12 constituting the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 are the same, but they may be different. For example, the fixed resistance elements 4 and 5 are in the stacking order of FIG. 12, but the magnetoresistive effect elements 2 and 3 are the free magnetic layer 36, the nonmagnetic layer 35, the fixed magnetic layer 34, the antiferromagnetic layer 33, and the like from the bottom. The protective layers 37 may be stacked in this order. However, the manufacturing process can be simplified by making the stacking order and film thickness of the element portions 12 constituting the magnetoresistive effect elements 2 and 3 and the fixed resistance elements 4 and 5 the same. 3 and the resistance change temperature coefficient (TCR) of the fixed resistance elements 4 and 5 can be adjusted more easily and with high accuracy.

  The first soft magnetic body 23 may be formed below the element portion 12 via an insulating layer. At this time, the first soft magnetic body 23 is formed on both the upper and lower sides of the element portion 12 or on one side.

  The fixed resistance element shown in FIG. 1 was formed. Six element portions 12 were formed to have a meander shape. The element width 12 of the element part 12 is 3 μm, the element length L1 is 60 μm, the film thickness T1 is 270 mm, the width dimension W2 of the first soft magnetic body (CoFeSiB) is 6 μm, the length dimension L2 is 100 μm, the film thickness is 5000 mm, A distance T5 in the height direction between the first soft magnetic body 23 and the element portion 12 of the magnetoresistive effect element was set to 0.3 μm. The fixed magnetic layer 34 was fixedly magnetized in the length direction (Y direction) by annealing in a magnetic field.

  The element unit 12 is an element that exhibits a resistance change rate (MR ratio) of about 3% with respect to an external magnetic field of ± 5 Oe in the form in which the first soft magnetic body 23 is not provided.

  An external magnetic field in the range of ± 5 Oe from each of the X direction and Y direction shown in FIG. 1 was flowed into the fixed resistance element, and the resistance change rate (MR ratio) was examined. As shown in FIG. 10, it was found that the resistance change rate (MR ratio) can be suppressed to about 0.02% or less by applying an external magnetic field in the range of ± 5 Oe from either the X direction or the Y direction. .

  Next, as shown in the left diagram of FIG. 11, the element portion 12 in which the Y direction is the longitudinal direction and the fixed magnetization direction of the fixed magnetic layer 34 is oriented in the Y direction, and the Y direction is above the element portion 12. A first soft magnetic body in the longitudinal direction was formed. The left diagram of FIG. 11 corresponds to one element portion 12 constituting the fixed resistance elements 4 and 5 of FIG. 1A and a first soft magnetic body 23 facing the element portion 12 in the film thickness direction. .

  In the graph on the right side of FIG. 11, for example, “5 μmL20” on the horizontal axis indicates the element width W1 of the element portion 12 in the first half and the first from the element length direction (longitudinal direction) with respect to the element portion 12. The amount of protrusion (one side) of the soft magnetic material 23 is shown. That is, “5 μmL20” indicates that the element width W1 of the element unit 12 is 5 μm, and the amount of protrusion (one side) of the first soft magnetic body 23 is 20 μm.

  Further, the film thickness T1 of the element portion 12 is 270 mm, the width dimension W2 of the first soft magnetic body (CoFeSiB) is 6 μm, the length dimension L2 is 100 μm, the film thickness is 5000 mm, and the first soft magnetic body 23 and the magnetoresistive effect. An interval T5 in the height direction between the element portions 12 of the element was set to 0.3 μm.

  As shown on the horizontal axis of FIG. 11, the element width W1 and the amount of protrusion (one side) of the first soft magnetic body 23 are changed, and at this time, an external magnetic field of ± 5 Oe is applied from the X direction and the Y direction, respectively. The resistance change rate (MR ratio) was determined. As shown in FIG. 11, it was found that the resistance change rate (MR ratio) can be suppressed to 0.2% or less.

  Next, as shown in the left diagram of FIG. 12, the element portion 12 in which the X direction is the longitudinal direction and the fixed magnetization direction of the pinned magnetic layer 34 is oriented in the Y direction, and the X direction is the longitudinal direction above the element portion 12. A first soft magnetic body in the direction was formed.

  The film thickness T1 of the element portion 12 is 270 mm, the width dimension W2 of the first soft magnetic body (CoFeSiB) is 6 μm, the length dimension L2 is 100 μm, the film thickness is 5000 mm, and the first soft magnetic body 23 and the magnetoresistive element An interval T5 in the height direction between the element portions 12 was set to 0.3 μm.

  As shown in the horizontal axis of FIG. 12, the element width W1 and the amount of protrusion (one side) of the first soft magnetic body 23 are changed, and at this time, an external magnetic field of ± 5 Oe is applied from the X direction and the Y direction, respectively. The rate of change (MR ratio) was determined. As shown in FIG. 12, the rate of change in resistance (MR ratio) was larger than that in FIG. 11, indicating that it cannot be used as a fixed resistance element.

  Next, the fixed resistance element shown in the left figure of FIG. 13 was formed. Although similar to the left diagram of FIG. 11, in FIG. 13, the width of the first soft magnetic body 23 is set to 2 μm, which is smaller than the element width W <b> 1 of the element section 12. The other conditions were the same as in FIG. As shown in the graph of FIG. 13, the resistance change rate (MR ratio) was larger than that in FIG. In particular, the resistance change rate (MR ratio) increased with respect to the external magnetic field from the Y direction. Therefore, in the form of FIG. 13, it turned out that it cannot be used as a fixed resistance element.

  Next, the fixed resistance element shown in the left figure of FIG. 14 was formed. The configuration of the element portion 12 is the same as that in FIG. 11, and the six element portions 12 have a meander shape. A first soft magnetic body 23 having a size of 150 μm × 150 μm was formed.

  As shown in the graph of FIG. 14, the rate of change in resistance (MR ratio) was larger than that in FIG. Therefore, it was found that the configuration of FIG. 14 cannot be used as a fixed resistance element.

The figure which shows the part of the magnetoresistive effect element and fixed resistance element especially of the magnetic sensor in 1st Embodiment ((a) is a partial top view, (b) is a height direction along the AA line of (a). (Partial cross-sectional view cut in the Z direction shown in the figure and viewed from the arrow direction), (c) is cut in the height direction (Z direction shown in the figure) along the line BB in (a) and viewed from the arrow direction. (Partial sectional view), The partial top view which shows the part of the magnetoresistive effect element and fixed resistance element of the magnetic sensor in 2nd Embodiment, The partial top view which shows the part of the magnetoresistive effect element especially fixed resistance element of the magnetic sensor in 3rd Embodiment, The figure for demonstrating the relationship between the fixed magnetization direction of the fixed magnetic layer of a magnetoresistive effect element, the magnetization direction of a free magnetic layer, and an electrical resistance value, Sectional drawing which shows the cut surface at the time of cut | disconnecting a magnetoresistive effect element from a film thickness direction, A circuit diagram of the magnetic sensor of the present embodiment, Partial plan view showing the configuration of the fixed resistance element of another preferred embodiment and the simulation result of the magnetic field, FIG. 7 is a partial plan view showing the configuration of the fixed resistance element of this embodiment different from FIG. The flowchart which shows the manufacturing process of the magnetic sensor of this embodiment, A graph showing a rate of change in resistance (MR ratio) when an external magnetic field in a range of ± 5 Oe from the direction of the X direction and the Y direction is applied to the fixed resistance element of this example; A graph showing a rate of change in resistance (MR ratio) when an external magnetic field of ± 5 Oe from the X direction and the Y direction acts on the fixed resistance element (example) in the left diagram; A graph showing a rate of change in resistance (MR ratio) when an external magnetic field of ± 5 Oe acts from the X direction and the Y direction on the fixed resistance element (comparative example) in the left figure; A graph showing a rate of change in resistance (MR ratio) when an external magnetic field of ± 5 Oe acts from the X direction and the Y direction on the fixed resistance element (comparative example) in the left figure; A graph showing a rate of change in resistance (MR ratio) when an external magnetic field of ± 5 Oe acts from the X direction and the Y direction on the fixed resistance element (comparative example) in the left figure;

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Magnetic sensor 2, 3 Magnetoresistance effect element 4, 5 Fixed resistance element 6 Bridge circuit 7 Input terminal 8 Ground terminal 9 Differential amplifier 10 External output terminal 11 Integrated circuit 12 Element part 13 Connection electrode part 14 Output extraction part 16 Substrate 17 Insulating layer 18 Second soft magnetic material 23 First soft magnetic material 33 Antiferromagnetic layer 34 Fixed magnetic layer 36 Free magnetic layer L1 Element length L2 (of the first soft magnetic material) Length dimension L3 (Second soft magnetic material) Length dimension W1 element width W2 (first soft magnetic body) width dimension W3 (second soft magnetic body) width dimension

Claims (15)

A magnetic sensor comprising a magnetoresistive effect element and a fixed resistance element connected in series to the magnetoresistive effect element via an output extraction portion,
The magnetoresistive element includes an element part having a pinned magnetic layer whose magnetization direction is fixed, and a free magnetic layer which is laminated on the pinned magnetic layer via a nonmagnetic layer and changes the magnetization direction upon receiving an external magnetic field With
The fixed resistance element includes an elongated element portion having an element length L1 longer than an element width W1, and the element portion constituting the fixed resistance element includes the fixed magnetic layer and the fixed magnetic layer. And the free magnetic layer laminated via the nonmagnetic layer, and the pinned magnetization direction of the pinned magnetic layer is directed to the element length direction,
A width dimension W2 in the same direction as the element width W1 is larger than the element width W1 and spaced from both sides of the element width of the element section in the element width direction at a distance from the element portion constituting the fixed resistance element. An extension portion is provided, and a length dimension L2 in the same direction as the element length L1 is larger than the element length L1 and extends from both sides of the element portion in the element length direction in the element length direction. A magnetic sensor comprising a first soft magnetic body that includes an extending portion that protrudes and has a length dimension L2 larger than the width dimension W2.   The magnetoresistive effect element has an elongated element portion formed with an element length longer than an element width, and a fixed magnetization direction of the fixed magnetic layer is directed in an element width direction, Each element portion is arranged so that the element length direction of the element portion constituting the magnetoresistive effect element and the element length direction of the element portion constituting the fixed resistance element are orthogonal to each other to constitute the magnetoresistive effect element The magnetic sensor according to claim 1, wherein a fixed magnetization direction of the fixed magnetic layer and a fixed magnetization direction of the fixed magnetic layer constituting the fixed resistance element are directed in the same direction.   3. The magnetic sensor according to claim 1, wherein the stacking order and film thicknesses of the element portions constituting the magnetoresistive effect element and the fixed resistance element are equal. A plurality of the element portions constituting the fixed resistance element are arranged at intervals in the element width direction, and the end portions of each element portion are connected to form a meander shape,
4. The magnetic sensor according to claim 1, wherein the first soft magnetic body is individually arranged for each element portion constituting the fixed resistance element. 5.   5. The magnetic sensor according to claim 4, wherein the first soft magnetic body is further disposed outside both outer surfaces of the element portion located on both sides in the element width direction. A plurality of the element portions constituting the fixed resistance element are arranged at intervals in the element width direction, and the end portions of each element portion are connected to form a meander shape,
4. The magnetic sensor according to claim 1, wherein one of the first soft magnetic bodies is formed to have a size that covers all of the element portions constituting the fixed resistance element. 5. A plurality of the element portions constituting the magnetoresistive effect element are arranged at intervals in the element width direction, and the end portions of each element portion are connected to form a meander shape. On the other hand, the second soft magnetic body having a width dimension W3 in the same direction as the width dimension of each element and a length dimension L3 in the same direction as the element length direction is either above, directly below, or directly below. Formed without contact with the element,
The length dimension L3 of the second soft magnetic body is longer than the length of each element, and the soft magnetic body extends from both sides of the element length direction of the element section in the element length direction. A magnetic sensor according to claim 1, comprising: In a method of manufacturing a magnetic sensor comprising a magnetoresistive effect element and a fixed resistance element connected in series to the magnetoresistive effect element via an output extraction portion,
A laminated film having a pinned magnetic layer whose magnetization direction is fixed and a free magnetic layer whose magnetization direction is changed by receiving an external magnetic field laminated on the pinned magnetic layer via a nonmagnetic layer is formed on a substrate. ,
Patterning the laminated film located in the fixed resistance element forming region to form an elongated element portion in which the element length L1 is longer than the element width W1;
Forming an element portion having the pinned magnetic layer in the magnetoresistive element forming region and the free magnetic layer laminated on the pinned magnetic layer via the nonmagnetic layer;
A step of fixedly magnetizing the fixed magnetic layer of the element portion constituting the fixed resistance element in the element length direction, and a fixed magnetization of the fixed magnetic layer of the element portion constituting the magnetoresistive effect element in the element width direction;
Forming electrode portions on both sides of the element portion in the element length direction;
Forming an insulating layer on the element portion;
A width dimension W2 in the same direction as the element width W1 is larger than the element width W1 via the insulating layer on the element portion constituting the fixed resistance element, and the element width direction from both sides of the element width of the element portion And a length dimension L2 in the same direction as the element length L1 is larger than the element length L1 from both sides of the element length direction in the element length direction. Forming a first soft magnetic body that includes an extending portion that extends and the length dimension L2 is greater than the width dimension W2.
A method of manufacturing a magnetic sensor, comprising: The element part constituting the magnetoresistive effect element is formed in an elongated shape in which the laminated film located in the magnetoresistive effect element forming region is patterned and the element length is longer than the element width. Yes,
Comprising fixed magnetization of the pinned magnetic layer of the laminated film,
When patterning each element part from the laminated film, the fixed magnetization direction of the fixed magnetic layer of the element part constituting the magnetoresistive effect element faces the element width direction, and the fixed magnetism of the element part constituting the fixed resistor element The element constituting the fixed resistance element in such a direction that the element length direction of the element portion constituting the magnetoresistive effect element is orthogonal to the fixed magnetization direction so that the fixed magnetization direction of the layer faces the element length direction The method of manufacturing a magnetic sensor according to claim 8, wherein the pattern is formed with the element length direction of the portion directed toward the fixed magnetization direction. The element part constituting the magnetoresistive effect element is formed in an elongated shape in which the laminated film located in the magnetoresistive effect element forming region is patterned and the element length is longer than the element width. Yes,
Each element portion is patterned from the laminated film so that the element length direction of the element portion constituting the magnetoresistive effect element and the element length direction of the element portion constituting the fixed resistance element are orthogonal to each other,
In the fixed magnetization step of the same fixed magnetic layer, the fixed magnetic layer of the element part constituting the magnetoresistive effect element is fixedly magnetized in the element width direction, and the fixed magnetic layer of the element part constituting the fixed resistance element is element length The method of manufacturing a magnetic sensor according to claim 8, wherein the magnetization is fixed in the direction. A plurality of the element parts constituting the fixed resistance element are arranged at intervals in the element width direction, and the ends of each element part are connected to form a meander shape,
11. The method of manufacturing a magnetic sensor according to claim 8, wherein the first soft magnetic body is individually disposed above each element portion constituting the fixed resistance element via an insulating layer.   The method of manufacturing a magnetic sensor according to claim 11, wherein the first soft magnetic body is further disposed outside both outer surfaces of the element portion located on both sides in the element width direction. A plurality of the element parts constituting the fixed resistance element are arranged at intervals in the element width direction, and the ends of each element part are connected to form a meander shape,
11. The method of manufacturing a magnetic sensor according to claim 8, wherein one of the first soft magnetic bodies is formed to have a size that covers the upper part of all the element portions constituting the fixed resistance element. A plurality of the element portions constituting the magnetoresistive effect element are arranged at intervals in the element width direction, and the end portions of each element portion are connected and formed in a meander shape,
In the same step as the step of forming the first soft magnetic layer, the width dimension in the same direction as the element width W1 is W3 on either side of or directly above each element portion constituting the magnetoresistive element. Forming a second soft magnetic body having a length dimension L3 in the same direction as the element length direction through an insulating layer;
At this time, the length L3 of the second soft magnetic body is formed longer than the element length L1, and the second soft magnetic body is further moved from both sides of the magnetoresistive element in the element length direction. The method for manufacturing a magnetic sensor according to claim 8, wherein the magnetic sensor is formed by including an extending portion extending in a length direction.   15. The first soft magnetic body is not formed above the element portion, or the first soft magnetic body is formed below the element portion via an insulating layer together with the upper portion of the element portion. The manufacturing method of the magnetic sensor in any one of.

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