JP2002314062A - Solid-state imaging device and imaging system - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To enable detection of frequency components in a plurality of directions. In a solid-state imaging device including a pixel region in which pixels having a photoelectric conversion function are two-dimensionally arranged, a photoelectric conversion unit of the pixel is divided into two parts, and the pixel region is divided into a plurality of types having different division directions. It is composed of pixels. In the pixel region, the photoelectric conversion unit of an arbitrary pixel is divided in parallel to one arrangement direction of the pixel, and the photoelectric conversion units of other pixels are divided at right angles to one arrangement direction. In the pixel area, any pixel has a photoelectric conversion unit of 45
The pixel is divided in the direction of °, and the photoelectric conversion units of the other pixels are divided in the direction of −45 ° with respect to one arrangement direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device and an image pickup system having both a distance measuring function and an image pickup function.

[0002]

2. Description of the Related Art The following has been proposed as a solid-state imaging device incorporating a focus detection device using a conventional phase difference detection method. An example will be described with reference to FIG. 101 and 102 are representatives of light beams passing through an area called viewpoint A, and 103 and 104 are representatives of light beams passing through an area called viewpoint B. One microlens 105 is provided for the two light receiving units of the photoelectric conversion unit 106 that captures the light beam that has passed through the viewpoint A and the photoelectric conversion unit 107 that captures the light beam that has passed the viewpoint B. In each pair, image data A (1)... A that captures the luminous flux of the viewpoint A
(N), image data B (1) that captures the luminous flux of the viewpoint B
B (N) is obtained, and by performing a correlation operation on them, the amount of defocus can be detected, the optical system can be changed to a desired state, and focus detection can be performed.

FIG. 12 shows a pixel of a solid-state imaging device incorporating a focus detection device using such a phase difference detection method. The micro lens 400 corresponds to 105 in FIG.
The photoelectric conversion units 401 and 402 correspond to the photoelectric conversion units 106 and 107 in FIG. 11, respectively. In this figure, elements other than the microlens and the photoelectric conversion unit in the pixel are omitted.

FIG. 13 shows an example of an equivalent circuit diagram of this pixel. In FIG. 13, the photoelectric conversion unit 501, the photoelectric conversion unit 5
02 is connected to the transfer MOS transistor 50
3. Connected to the gate of the source follower input MOS transistor 505 via the transfer MOS transistor 504,
The drain of the source follower input MOS transistor 505 is connected to the source of the selection MOS transistor 506, and the source is connected to the vertical signal line 508. Select MO
The drain of the S transistor 506 is connected to the power supply 509. The reset MOS transistor 507 is used for resetting the charge stored in the photoelectric conversion units 501 and 502.

In this circuit, a signal voltage is generated at the gate of the source follower input MOS transistor 505 in accordance with the electric charge stored in the photoelectric conversion units 501 and 502, and the signal voltage is amplified by the source follower circuit and is amplified by the vertical signal line 508. It is to read. In the pixel shown in the equivalent circuit diagram of FIG. 13, at the time of distance measurement, the transfer MOS transistor 503 reads the photoelectric conversion result of the photoelectric conversion unit 501, and then the transfer MOS transistor 504 reads the photoelectric conversion unit 502.
By reading out the photoelectric conversion results in the above, these can be read out independently. At the time of imaging, the transfer MOS transistors 503 and 504 are simultaneously turned on to add and read out the photoelectric conversion results in the photoelectric conversion units 501 and 502. It is possible. Also, for example, in a pixel in which a photoelectric conversion unit is divided into a plurality of parts, a signal line is provided for each of the plurality of photoelectric conversion units, thereby independently reading out a photoelectric conversion result, and performing addition outside the pixel. , Other methods can be used. This allows
A solid-state imaging device having both distance measurement and imaging functions by reading out the photoelectric conversion results independently from each other in a pixel in which the photoelectric conversion unit is divided into a plurality at the time of distance measurement and adding and reading the result at the time of imaging. Can be configured.

[0006]

When distance measurement is performed by the above-described solid-state imaging device, the photoelectric conversion units of the pixels are divided in the horizontal direction as shown in FIG. And only the vertical line component can be detected for the image. However, in order to realize more accurate distance measurement, simultaneous detection of a vertical line component and a horizontal line component is required.

The present invention has been made to solve the above problems, and has as its object to detect frequency components in a plurality of directions with one solid-state imaging device. It is another object of the present invention to perform high-speed detection of frequency components in a plurality of directions in order to achieve higher-performance ranging.

[0008]

According to the present invention, there is provided a solid-state imaging device including a pixel region in which pixels having a photoelectric conversion function are two-dimensionally arranged. The pixel region is characterized by being constituted by a plurality of types of pixels having different division directions.

Further, in the solid-state imaging device according to the present invention, in a solid-state imaging device having a pixel region in which pixels having a photoelectric conversion function are two-dimensionally arranged, in the pixel region, an arbitrary pixel is a pixel whose photoelectric conversion unit is a pixel. And the other pixel is characterized in that the photoelectric conversion unit is divided at right angles to the one arrangement direction.

The solid-state imaging device according to the present invention is a solid-state imaging device having a pixel region in which pixels having a photoelectric conversion function are two-dimensionally arranged. The pixel is divided in a direction of 45 ° with respect to one arrangement direction, and the other pixels are characterized in that the photoelectric conversion units are divided in a direction of −45 ° with respect to the one arrangement direction.

[0011]

According to the present invention, for example, a pixel for detecting a vertical line component and a pixel for detecting a horizontal line component are provided in a pixel area. By using the pixels in which the photoelectric conversion unit is divided in the horizontal direction, a horizontal correlation operation can be performed on the image data, and a vertical line component can be detected on the image. On the other hand, by using pixels in which the photoelectric conversion unit is divided in the vertical direction, a vertical correlation operation can be performed on the image data, and a horizontal line component can be detected on the image. . As described above, according to the present invention, it is possible to detect the vertical line component and the horizontal line component with respect to the image, thereby realizing high quality ranging.

[0012]

Embodiments of the present invention will be described below in detail with reference to the drawings.

(First Embodiment) A first embodiment of the solid-state imaging device according to the present invention will be described with reference to FIGS. 1, 2, 3 and 4. FIG.

FIG. 1 is a plan view showing a configuration of a pixel region of a solid-state imaging device according to a first embodiment of the present invention. FIG. 1 shows a pixel region in a solid-state imaging device including a pixel region in which a plurality of pixels having a photoelectric conversion function are arranged two-dimensionally and a peripheral circuit. In the figure, the hatched pixels indicate that the photoelectric conversion unit is in the row direction (row arrangement direction; vertical direction in the figure)
Is a pixel divided in parallel (horizontal direction) with respect to the other pixels.
Are divided into pixels.

FIGS. 2 and 3 show a pixel in which a photoelectric conversion unit is divided into a plurality of parts. The division of the photoelectric conversion unit is performed by, for example, device separation by LOCOS or the like, separation by a light shielding layer, or simply forming a photoelectric conversion unit. Any structure may be used, such as separation only at the junction of impurities. In FIG. 2, a photoelectric conversion unit is divided in parallel (horizontal direction) with respect to a microlens 500 in a row direction (row arrangement direction), and photoelectric conversion units 501 and 502 are provided. Also, in FIG.
With respect to the microlens 600, the photoelectric conversion unit is divided at a right angle (vertical direction) with respect to the row direction (row arrangement direction), and photoelectric conversion units 601 and 602 are provided.

In this embodiment, a CMOS solid-state imaging device is used. However, in FIGS. 2 and 3, a transfer switch, a reset unit, a readout unit, a selection unit, a diffusion region, and the like included in a pixel are omitted. are doing. The equivalent circuit of the pixel unit is the same as that shown in FIG. 13. In the pixel unit of the present embodiment using the pixel configuration of FIG.
After reading the photoelectric conversion result in the photoelectric conversion unit 501 by the OS transistor 503, the transfer MOS transistor 5
By reading out the photoelectric conversion result in the photoelectric conversion unit 502 by using the information 04, it is possible to read these independently. During imaging, the transfer MOS transistor 503,
By simultaneously turning on 504, the photoelectric conversion unit 501,
It is possible to add and read the photoelectric conversion result in 502.

Also, for example, in a pixel in which the photoelectric conversion unit is divided into a plurality of parts, a signal line is provided for each of the plurality of photoelectric conversion units, so that the result of the photoelectric conversion is independently read out, and the addition is performed outside the pixel. Other methods such as the method described above can be used. It is needless to say that the circuit configuration in the present embodiment is merely an example, and other circuit configurations can be used. In the present embodiment, the present invention is applied to a CMOS solid-state imaging device. However, the present invention is not limited to this, and is also applicable to a solid-state imaging device such as a CCD.

In this embodiment, the photoelectric conversion units of the pixels hatched in FIG. 1 are arranged in the horizontal direction (horizontal direction (parallel direction) with respect to the row direction (row arrangement direction)) as shown in FIG.
For example, by using the signal of a pixel in which the photoelectric conversion unit in the area A in FIG. 1 is divided into two in the horizontal direction, the phase difference of the frequency component of the corresponding subject in the horizontal direction can be detected. It can be carried out. On the other hand, the photoelectric conversion units of the pixels not hatched are divided into two in the vertical direction (perpendicular (perpendicular) to the row direction (row arrangement direction)) as shown in FIG. , Region B in FIG.
By using the signal of the pixel whose photoelectric conversion unit is vertically divided into two, the phase difference of the vertical frequency component of the corresponding subject can be detected.

As described above, in the present embodiment, a solid-state imaging device for both distance measurement and imaging capable of measuring distances in both directions is provided by providing pixels for detecting vertical lines and horizontal lines in a pixel area. be able to. In the present invention, the pixel shape and the pixel arrangement are not limited to the present embodiment.

Also, using a solid-state imaging device such as a CMOS solid-state imaging device capable of reading out the photoelectric conversion results of pixels belonging to a desired block, and reading out only the photoelectric conversion results of pixels in an area used for distance measurement. This makes it possible to reduce the time spent for ranging.

This will be described with reference to FIG. First, a method for reading all pixels will be described. First, the MOS transistors Q1 and Q2 are turned on to reset the residual charges of the output lines OUT # U and OUT # L. Next, when the level of the signal line V1 of the vertical shift register VSR is high, the transfer MOS transistors HU and HL
Is turned on, the signal charges from the pixels in the row indicated by P1 are read out to the storage capacitors CU1 to CU7 and CL1 to CL7. The transfer MOS transistors QU1 to QU7 are sequentially turned on by the horizontal shift register HSR1, and the transfer MOS transistors QL1 to QL7 are sequentially turned on by the horizontal shift register HSR2 to output the signal charges stored in the storage capacitors CU1 to CU7 and CL1 to CL7. Read to lines OUT # U and OUT # L.

Next, the MOS transistors Q1 and Q2 are turned on to reset the residual charges on the output lines OUT # U and OUT # L, and the level of the signal line V2 is set high by the vertical shift register VSR, which is also indicated by P2. The optical signals of the pixels in the row are read. Similarly, by sequentially setting the signal lines V3 to V10 to the high level, the optical signals of all the pixels are read.

Next, a method for reading out the pixels belonging to the block indicated by A in FIG. 4 will be described. First, the MOS transistors Q1 and Q2 are turned on to reset the residual charges of the output lines OUT # U and OUT # L. Next, when the signal line V4 of the vertical shift register VSR is at a high level, the transfer MOS transistors HU, H
When L is turned on, the signal charges from the pixels in one row including the pixels in the block A are stored in the storage capacitors CU1 to CU7, CL1 to C
Read to L7. Transfer by horizontal shift register HSR1
By sequentially turning on the transfer MOS transistors QL3 and QL4 by the MOS transistors QU3 and QU4 and the horizontal shift register HSR2, the signal charges accumulated in the storage capacitors are read out to the output lines OUT # U and OUT # L.

Next, the MOS transistors Q1 and Q2 are turned on to reset the residual charges on the output lines OUT # U and OUT # L, and the signal line V5 is set to a high level by the vertical shift register VSR, and the other signals in the block A are similarly set. The signal charges from one row of pixels are read. In the present embodiment, the block A is composed of 4 horizontal pixels × 2 vertical pixels, but is not limited to this, and the number of pixels in the block can be set to an arbitrary number. Further, a case where a block is composed of one horizontal pixel × one vertical pixel, that is, one pixel is also included. That is, the pixel from which the signal is read can be arbitrarily selected.

FIG. 14 shows an example in which the circuit of the output section of the vertical shift register VSR shown in FIG. 4 is configured as a decoder circuit as a configuration for selecting the pixels in the block. What is required as the output of the vertical shift register VSR is to selectively set the outputs of V1 to V10 to high.
Therefore, by changing the inputs of S1 to S4, V1 to V10 can be changed according to the operation shown in the logic table of FIG.
Can be selectively made high. In the case of horizontal shift registers HSR1 and HSR2, QU1 to QU7, QL1 to
It is possible to turn on QL7 selectively. (Second Embodiment) A second embodiment of the solid-state imaging device of the present invention will be described with reference to FIGS.

In the present embodiment, the pixel area is composed of a pixel whose photoelectric conversion unit is divided into two at an oblique angle of 45 ° and a pixel at which the photoelectric conversion unit is divided into two at an oblique angle of -45 °.

In this embodiment, the photoelectric conversion units of the pixels hatched in FIG.
For example, by using a signal of a pixel in which the photoelectric conversion unit in the area A in FIG. 5 is bisected in the oblique 45 ° direction, the frequency component in the 45 ° direction of the corresponding subject is used. Can be detected.

On the other hand, as shown in FIG. 7, the photoelectric conversion portion of the pixel not hatched is divided into two portions in the diagonal direction of -45 °. By using the signals of the pixels divided into two in the direction, the phase difference of the frequency component in the oblique −45 ° direction of the corresponding subject can be detected. Also, FIG.
Since the pixel dividing direction shown in FIG. 7 also has a horizontal component and a vertical component, for example, by using the pixels in the regions C and D in FIG. The phase difference of the frequency component in the direction can be detected. In the present embodiment, the two types of pixels are symmetric with respect to the column direction, so that the layout is easy, and not only the phase difference detection of the frequency components in the ± 45 ° direction of the subject, but also the horizontal and vertical The phase difference of the frequency component can be detected, and high-performance ranging can be easily achieved.

In this embodiment, as in the first embodiment, a solid-state imaging device such as a CMOS solid-state imaging device capable of reading out the photoelectric conversion results of pixels belonging to a desired block is used for distance measurement. By reading out only the photoelectric conversion result of the pixel in the area to be used, it is possible to reduce the time spent for distance measurement.

Means for further reducing the time spent for distance measurement will be described with reference to FIGS.

FIG. 8 shows an example of an equivalent circuit of the pixel portion used in this embodiment. In the figure, one end of each of a photoelectric conversion unit 1101 and a photoelectric conversion unit 1102 is connected to the gate of a source follower input MOS transistor 1105 via a transfer MOS transistor 1103 and a transfer MOS transistor 1104. The drain is connected to the source of the selection MOS transistor 1106, and the source is connected to the vertical signal line 1108. The drain of the selection MOS transistor 1106 is connected to the source of the selection MOS transistor 1107, and the drain of the selection MOS transistor 1107 is connected to the power supply 1
109 is connected. Reset MOS transistor 1
108 is used for resetting the electric charge stored in the photoelectric conversion unit. The selection MOS transistor 1106 is turned on and off by a vertical shift register (not shown),
The on / off state of the transistor 1107 is controlled by oblique selection lines a1 to a9 and b1 to b9. In this circuit, a signal voltage is generated at the gate of the source follower input MOS transistor 1105 according to the electric charge accumulated in the photoelectric conversion unit of the pixel selected simultaneously by both of the selection MOS transistors 1106 and 1107, and the signal voltage is generated by the source follower circuit. The charge is amplified and read out by a vertical signal line. The circuit configuration in this embodiment is merely an example, and it goes without saying that other circuit configurations can be used. Next, a method of performing normal reading and oblique reading at the time of AF (autofocus) with the present circuit configuration will be described.

When performing normal reading, first, the MOS
The transistors Q1 and Q2 are turned on to reset the residual charges on the output lines OUT # U and OUT # L. Next, diagonal selection lines a1 to a9, b1 to
The level of b9 is set to high, the levels of the signal lines V1 and V2 of the vertical shift register VSR (not shown) are set to high,
By turning on the transistors HU and HL, the signal charges from the two rows of pixels indicated by P1 are stored in the storage capacitors CU1 to CU.
6, read out to CL1 to CL6. Horizontal shift register HSR1
By sequentially turning on the transfer MOS transistors QL1 to QL7 by the transfer MOS transistors QU1 to QU6 and the horizontal shift register VSR2, the signal charges stored in the storage capacitors CU1 to CU6 and CL1 to CL6 are output to the output lines OUT # U and OUT # L. Read out.
Similarly, by setting V3 to V8 of the vertical shift register VSR to high, optical signals of all pixels are read.

Next, a description will be given of a method of performing oblique reading at the time of AF for pixels in P2 in the figure. In this case, the selection lines V1 to V8,
By turning the diagonal selection line a5 high and turning on the MOS transistor HL, the optical signal of the pixel in P2 is stored in the storage capacitor CL2.
To CL5. Transfer MOS by horizontal scanning circuit VSR2
By sequentially turning on the transistors QL2 to QL5, the signal charges stored in the storage capacitors CL2 to CL5 are output to the output line OUT # L.
Read out.

In this method, since the optical signals of the pixels belonging to different rows are simultaneously transferred to the storage capacitor, it is possible to read the optical signals of the pixels in P2 in a time equivalent to the read time of one row. The phase difference of the frequency component in the oblique direction of the subject can be detected at high speed.

In the present embodiment, the diagonal selection line is connected to all the pixels in the pixel region. However, the present invention is not limited to this, and only the pixels determined in the pixel region are
The oblique selection line or the one in FIG. 9 in which the selection MOS transistor 1107 in FIG. 8 or both of them are included. That is, the selection MOS transistor 1107 is not formed even if the diagonal selection line is formed only in the pixel determined in the pixel region. The diagonal selection line is not formed even if the selection MOS transistor 1107 is formed. Diagonal selection line and selection MOS transistor 11
07 are both formed or diagonal selection line and selection
The case where neither the MOS transistor 1107 nor the MOS transistor 1107 is formed is also included.

Further, in the first embodiment, the pixel region is constituted by the pixels shown in FIGS. 2 and 3, and in the second embodiment, the pixel region is constituted by the pixels shown in FIGS. However, the present invention is not limited to these examples. For example, a case in which a pixel region is configured by four types of pixels shown in FIGS. 2, 3, 6, and 7 is also included in the present invention. Things.

Next, an imaging system using the solid-state imaging devices of the first and second embodiments will be described. FIG.
An embodiment in which the solid-state imaging device of the present invention is applied to a still camera will be described in detail based on the above.

FIG. 10 is a block diagram showing a case where the solid-state imaging device of the present invention is applied to a "still video camera".

In FIG. 10, reference numeral 101 denotes a barrier which functions both as protection of the lens and as a main switch; 102, a lens for forming an optical image of a subject on the solid-state image sensor 104;
Reference numeral 03 denotes an aperture for varying the amount of light passing through the lens 102, reference numeral 104 denotes a solid-state imaging device for capturing an object formed by the lens 102 as an image signal, and reference numeral 106 denotes an analog image signal output from the solid-state imaging device 104. An A / D converter for performing digital conversion; 107, a signal processing unit for performing various corrections on the image data output from the A / D converter 106 and compressing the data; 108, a solid-state image sensor 104; Circuit 105, A / D converter 10
6. Timing generator for outputting various timing signals to the signal processor 107; 109, an overall control / arithmetic unit for controlling various operations and the entire still video camera; 110, a memory unit for temporarily storing image data And 111, an interface unit for recording or reading on a recording medium; 112, a removable recording medium such as a semiconductor memory for recording or reading image data;
Is an interface unit for communicating with an external computer or the like.

Next, the operation of the still video camera at the time of shooting in the above-described configuration will be described.

When the barrier 101 is opened, the main power is turned on, the power of the control system is turned on, and the power of the imaging system circuit such as the A / D converter 106 is turned on.

Then, in order to control the exposure amount, the overall control / arithmetic unit 109 opens the aperture 103, and the signal output from the solid-state image sensor 104 is converted by the A / D converter 106, and then the signal is processed. The data is input to the unit 107. The overall control / arithmetic unit 109 calculates the exposure based on the data.

The brightness is determined based on the result of the photometry, and the overall control / arithmetic unit 109 controls the aperture according to the result.

Next, based on the signal output from the solid-state imaging device 104, the overall control / calculation unit 109 calculates the distance to the subject. Thereafter, the lens is driven to determine whether or not the lens is in focus. If it is determined that the lens is not in focus, the lens is driven again to perform distance measurement.

Then, after the focus is confirmed, the main exposure starts. When the exposure is completed, the image signal output from the solid-state imaging device 104 is AD-converted by the A / D converter 106,
The signal passes through the signal processing unit 107 and is written into the memory unit by the overall control / calculation 109. Thereafter, the data stored in the memory unit 110 is recorded on a removable recording medium 112 such as a semiconductor memory through the recording medium control I / F unit under the control of the overall control / arithmetic unit 109. External I / F unit 113
May be input directly to a computer or the like to process the image.

[0046]

As described above, according to the present invention,
Detection of frequency components in a plurality of directions becomes possible, and higher quality ranging can be realized. In addition, by reading out signals of pixels in a desired block in a pixel area by block reading, it is possible to reduce the time spent for distance measurement.

Further, according to the present invention, the photoelectric conversion part is formed obliquely.
By forming a pixel area by pixels divided in the direction of 5 ° and in the direction of −45 °, it is possible to detect the frequency component of the subject in the oblique direction. Further, by using a plurality of selection lines and simultaneously transferring signals of pixels belonging to different rows to the storage unit, it is possible to greatly reduce the time spent for distance measurement.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating a configuration of a pixel region according to a first embodiment of a solid-state imaging device of the present invention.

FIG. 2 is a plan view showing a pixel in which a photoelectric conversion unit is divided into a plurality.

FIG. 3 is a plan view showing a pixel in which a photoelectric conversion unit is divided into a plurality.

FIG. 4 is a configuration diagram illustrating a solid-state imaging device capable of reading a photoelectric conversion result of a pixel belonging to a desired block.

FIG. 5 is a plan view illustrating a configuration of a pixel region of a solid-state imaging device according to a second embodiment of the present invention.

FIG. 6 is a plan view showing a pixel in which a photoelectric conversion unit is divided into a plurality.

FIG. 7 is a plan view showing a pixel in which a photoelectric conversion unit is divided into a plurality.

FIG. 8 is a circuit configuration diagram showing an equivalent circuit of a pixel.

FIG. 9 is a configuration diagram illustrating a solid-state imaging device capable of reading a photoelectric conversion result of a pixel belonging to a desired block.

FIG. 10 is a block diagram showing a case where the solid-state imaging device of the present invention is applied to a still video camera.

FIG. 11 is a diagram for explaining an operation of a solid-state imaging device incorporating a focus detection device using a conventional phase difference detection method.

FIG. 12 is a plan view showing a pixel in which a photoelectric conversion unit is divided into a plurality.

FIG. 13 is a circuit configuration diagram showing an equivalent circuit of a pixel.

14 is a diagram illustrating an example in which a circuit of an output unit of the vertical shift register VSR illustrated in FIG. 4 is configured as a decoder circuit.

[Explanation of symbols]

500, 600, 900, 1000 microlenses 501, 502, 601, 602, 901, 902, 1
001, 1002, 1101, 1102 Photoelectric conversion units 503, 504, 1103, 1104 Transfer MOS transistors 505, 1105 Source follower input MOS transistors 506, 1106, 1107 Select MOS transistors 507, 1108 Reset MOS transistors 508, 1208 Vertical signal lines 509, 1109 Power supply

Continued on front page F term (reference) 4M118 AA10 AB01 AB03 AB09 BA14 CA02 CA19 CA22 FA06 FA34 FA42 GD04 GD07 5C022 AA13 AB03 AB28 AC42 AC56 AC69 5C024 CY17 GY31 GZ24

Claims (11)

[Claims] 1. A solid-state imaging device including a pixel region in which pixels having a photoelectric conversion function are two-dimensionally arranged, wherein a photoelectric conversion unit of the pixel is divided into two, and the pixel region is
A solid-state imaging device comprising a plurality of types of pixels having different division directions. 2. A solid-state imaging device including a pixel region in which pixels having a photoelectric conversion function are two-dimensionally arranged, wherein, in the pixel region, an arbitrary pixel is arranged such that a photoelectric conversion unit is arranged in a direction in which the pixels are arranged. A solid-state imaging device, wherein the pixels are divided in parallel, and the other pixels have the photoelectric conversion units divided at right angles to the one arrangement direction. 3. A solid-state imaging device including a pixel region in which pixels having a photoelectric conversion function are two-dimensionally arranged, wherein in the pixel region, an arbitrary pixel is arranged such that a photoelectric conversion unit is arranged in a direction in which the pixels are arranged. The solid-state imaging device is characterized in that the pixel is divided in a direction of 45 °, and the other pixels are divided in a direction of −45 ° with respect to the arrangement direction of the photoelectric conversion units. 4. The solid-state imaging device according to claim 1, wherein one microlens is provided on the pixel where the photoelectric conversion unit is divided. 5. The pixel has two transfer units for transferring a signal from each of the divided photoelectric conversion units, and a first control mode for reading signals by turning on the two transfer units independently. The solid-state imaging device according to any one of claims 1 to 4, further comprising a second control mode in which the two transfer units are simultaneously turned on to add signals. 6. The solid-state imaging device according to claim 1, wherein the pixel from which a signal is read is arbitrarily selected. 7. A vertical / horizontal selecting means for selectively reading the signal of the pixel, and a means for dividing the pixel into blocks of a plurality of pixels and reading signals of the pixels belonging to the block of a plurality of pixels. The solid-state imaging device according to claim 1, wherein: 8. The solid-state imaging device according to claim 1, further comprising a unit that simultaneously transfers signals of the pixels belonging to different rows to a storage unit. 9. The pixel according to claim 1, wherein a plurality of selection switches for selecting the pixel from which a signal is to be read and a plurality of selection lines for sending a control signal to the selection switch are provided for each pixel. 9. The solid-state imaging device according to any one of items 1 to 8. 10. A plurality of selection switches for selecting a pixel from which a signal is to be read for an arbitrary pixel and a plurality of selection lines for transmitting a control signal to the selection switch are provided in the pixel region. 10. A pixel is provided with a selection switch and a selection line for sending a control signal to the selection switch, one by one.
The solid-state imaging device according to claim 1. 11. A solid-state imaging device according to claim 1, an optical system for imaging light onto said solid-state imaging device, and a signal for processing an output signal from said solid-state imaging device. An imaging system comprising a processing circuit.