JP2002158929A - Solid-state imaging device, solid-state imaging device, and imaging system - Google Patents

Abstract

(57) [Problem] To make it possible to easily match the center of each pixel group with the center of each imaging lens. SOLUTION: In a solid-state imaging device including a plurality of pixel groups in which pixels having a photoelectric conversion element for converting incident light into an electric signal are two-dimensionally arranged, in a row direction and / or a column direction of the pixel groups 101a to 101d, The same redundant pixel 102 as the effective pixel of the pixel group is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device having a pixel area in which pixels having a photoelectric conversion element for converting incident light into an electric signal are two-dimensionally arranged, and an imaging optical system is provided on the solid-state imaging device. The present invention relates to a provided solid-state imaging device and an imaging system.

[0002]

2. Description of the Related Art An imaging lens is arranged on a solid-state imaging device.
In a solid-state imaging device in which light from a subject is imaged by an imaging lens and converted into an electric signal by a solid-state imaging device, alignment between the imaging center of the imaging lens and the center of a pixel region of the solid-state imaging device is performed. Had been

[0003]

However, the alignment between the image forming center of the image forming lens and the center of the pixel area of the solid-state image pickup device in the solid-state image pickup device is not always an easy operation, and it is structurally highly accurate. When alignment is required, more complicated work is required.

An object of the present invention is to provide a solid-state imaging device capable of adjusting the center of the pixel region of the solid-state imaging device and the center of the imaging lens with high precision and efficiency when assembling the solid-state imaging device and the imaging lens. An object of the present invention is to provide a solid-state imaging device in which an imaging lens is provided on the solid-state imaging device and an imaging system.

[0005]

In order to solve the above-mentioned problems, a solid-state imaging device according to the present invention comprises: a pixel region in which pixels having photoelectric conversion elements for converting incident light into electric signals are two-dimensionally arranged; An imaging optical system for imaging incident light on the pixel region; and a signal from a pixel in a predetermined region smaller than the pixel region, based on a positional relationship between the imaging optical system and the pixel region. Signal processing means for outputting as information,
It is characterized by having.

Further, the solid-state imaging device according to the present invention has a first pixel group in which pixels having photoelectric conversion elements for converting incident light into electric signals are two-dimensionally arranged, and the incident light is applied to the first pixel group. An imaging optical system for forming an image, and used when the center of image formation of the imaging optical system and the center position of the pixel group are shifted.
And a second pixel group including a plurality of pixels around the first pixel group.

A solid-state image pickup device according to the present invention is a solid-state image pickup device comprising a plurality of pixel groups in which pixels having photoelectric conversion elements for converting incident light into electric signals are two-dimensionally arranged. In addition, the same redundant pixels as the effective pixels of the pixel group are provided.

Further, according to the solid-state imaging device of the present invention, there is provided a solid-state imaging device having a plurality of pixel groups in which pixels having photoelectric conversion elements for converting incident light into electric signals are two-dimensionally arranged. And providing the same redundant pixel as the effective pixel in the column direction.

Further, the solid-state imaging device of the present invention is provided with a plurality of pixel groups in which pixels having photoelectric conversion elements for converting incident light into electric signals are two-dimensionally arranged, and in a row direction and / or a column direction of the pixel groups. In addition, it has the same redundant pixel as an effective pixel of the pixel group, first reading means for reading a signal from each pixel of the plurality of pixel groups, and second reading means for reading a signal from the redundant pixel. It is characterized by.

Further, in the solid-state imaging device according to the present invention, an imaging optical system is provided on a solid-state imaging device having a plurality of pixel groups in which pixels having photoelectric conversion elements for converting incident light into electric signals are two-dimensionally arranged. In the solid-state imaging device, in one of the row direction and the column direction of the pixel group, the pixel is moved in a direction in which it is difficult to match the imaging center position of the imaging optical system with the center position of the pixel group. It is characterized in that the same redundant pixels as the effective pixels of the group are provided.

In the solid-state imaging device according to the present invention, a plurality of pixel groups in which pixels each having a photoelectric conversion element for converting incident light into an electric signal are two-dimensionally arranged are arranged in a row direction and a column direction. A solid-state imaging device in which the width between the groups and the width between the pixel groups in the row direction are different, an imaging optical system that makes light incident on the pixel groups, and one of the row direction and the column direction of the pixel groups , The same redundant pixels as the effective pixels of the pixel group are provided in the direction in which the width between the pixel groups is narrow.

[0012] An imaging system according to the present invention includes the solid-state imaging device according to the present invention, an optical system that forms light on the solid-state imaging device, and a signal processing circuit that processes an output signal from the solid-state imaging device. It is characterized by.

Further, an imaging system according to the present invention includes the solid-state imaging device according to the present invention, and a signal processing circuit for processing an output signal from the solid-state imaging device.

The present invention extends the range of a conventional pixel group in a solid-state imaging device having a pixel group in which pixels having photoelectric conversion elements are two-dimensionally arranged. Specifically, an output signal from a pixel group whose range is enlarged is processed in an image processing unit, and a pixel for forming an image, that is, a range of effective pixels is selected, and the center of the pixel group of the solid-state imaging device is selected. Adjust the position of.

The plurality of color separation filters are R
The filter and the B filter are continuously arranged diagonally, and 2
One G filter is continuously arranged diagonally.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION The present inventor has a plurality of imaging lenses, and condenses light from an object to be imaged by each imaging lens to a two-dimensional sensor or the like having a photoelectric conversion element. The output signal of (1) is processed in an image processing unit, and a compound-eye solid-state imaging device that forms an image was examined.

FIG. 9 is a schematic diagram showing a configuration of an example of the solid-state imaging device. In FIG. 9, reference numeral 901 denotes an imaging lens for condensing light from an imaging target to pixel groups 902a to 902d provided with R, G1, G2, and B color filters; and 903, a solid-state imaging device including a plurality of photoelectric conversion elements. is there. R, G1, G2, B
By providing each of the filters, compound eye imaging can be performed.

Although the scope of the present invention is not particularly limited to the solid-state image pickup device, the compound-eye solid-state image pickup device condenses light from a compound-eye solid-state image pickup device and an object to be imaged onto the solid-state image pickup device. When assembling a plurality of imaging lenses, R, G
Fine adjustment to match the center of the imaging area of each pixel group of 1, G2, and B with the imaging center by the imaging lens is more difficult than that of a monocular solid-state imaging device, and the efficiency of assembly may be low. Since the present invention can provide an adjustment method other than the optical path adjustment, the present invention can be particularly suitably applied.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1) FIGS. 1 and 2 are schematic diagrams showing the configuration of a solid-state image sensor of a solid-state image sensor according to a first embodiment of the present invention. FIG. 1 is a plan view of the solid-state imaging device according to the present embodiment, and shows a so-called four-lens type.
As shown in FIG. 9, the solid-state imaging device includes an imaging lens (imaging optical system) disposed in front of the solid-state imaging device.

In FIG. 1, reference numerals 101 and 102 denote pixel regions in which photoelectric conversion elements for converting incident light into electric signals are two-dimensionally arranged.
103 is a pixel group provided in the row direction for adjusting the position of the center of the pixel group of the solid-state imaging device (to be a redundant pixel group);
Denotes one pixel constituting the pixel groups 101a to 101d. In the figure,
“+” Indicates the image forming center of each imaging lens, and “X” indicates the center of each pixel group.

FIG. 2 is a plan view showing a case where the solid-state imaging device of FIG. 1 has a readout circuit. In FIG.
101a to 101d denote pixel groups (in the figure, reference numerals 101b to 101d are omitted), and 102 denotes a pixel group provided in the row direction for adjusting the center position of the pixel group of the solid-state imaging device. , 203 is a horizontal shift register (HSR) for reading the output from the pixel group, 204 is a vertical shift register (VSR) for reading the output from the pixel group, and 205 is for amplifying the output read from the pixel group. It is an amplifier.
The pixel groups 101a to 101d and 102 are composed of pixels as shown in FIG.

FIG. 3 is an equivalent circuit diagram showing the configuration of the 103 pixel. 301 is a photodiode for photoelectrically converting incident light, 302 is a transfer switch for transferring an electric signal to a floating diffusion (FD) region, 303 is a reset switch for resetting charges in the floating diffusion (FD) region, and 304 is a floating diode. A MOS transistor, which has a gate connected to the fusion (FD) region, for obtaining an amplified signal, and 305, a vertical output line for outputting a signal charge.

A vertical shift register (VSR) shown in FIG.
After being transferred from the photodiode 301 to the floating diffusion region by the 204 and amplified by the MOS transistor 304, an electric signal is output to the vertical output line, and the signal is output to the horizontal shift register (HSR) in FIG.
The signal is read from the vertical output line 305 to the amplifier 205 by 203,
Amplified.

The solid-state imaging device according to the present embodiment includes R, G1,
It has four pixel groups 101a to 101d provided with four filters G2 and B, and makes incident light incident on the pixels 103 constituting each of the pixel groups 101a to 101d by an imaging lens.

When assembling the solid-state imaging device and the imaging lens as shown in FIG. 1, in order to align the center of each pixel group with the center of each imaging lens, the pixel group 101a and the pixel group 102 provided in this embodiment are used. By setting the effective pixel range, the center of each pixel group and the center of each imaging lens can be easily adjusted, and the efficiency of assembly can be increased. This embodiment is effective for an assembling method in which a horizontal shift is large. Also, the pixels of the pixel group 102 that are not used as effective pixels also photoelectrically convert incident light and output electric signals, and the light output signals are read out by the vertical shift register 204 and the horizontal shift register 203. Then, the signal is amplified by the amplifier 205 and output to a signal processing unit for forming an image. Signals from pixels not used as image information need not be read in the signal processing unit and imported as image information. . Then, various processes such as color processing are performed on signals from pixels used as image information, and the processed signals are output to a display (display means), a memory, or the like.

In addition to the so-called CMOS sensor shown in FIG. 3, for example, an amplified MOS imager (AMI), a charge modulation device (CMD),
Any sensor such as a CCD may be used.

The present embodiment is suitably used when it is difficult to align the center of the pixel group of the solid-state image sensor with the image forming center of the imaging lens in the row direction of the pixel group. For example,
As shown in FIG. 11, when the width of the selective oxide film region 110 separating the pixel groups is larger in the column direction than in the row direction, that is, the R pixel group and the G2 pixel group, and the G1 pixel group and the B pixel group The width of the selective oxide film region that separates the R pixel group and G1
When the pixel group and the selective oxide film region for separating the G2 pixel group and the B pixel group are formed to be wider than each other, the arrangement of the pixel group and the imaging lens is as shown in FIGS.

When the positional relationship between the imaging lens and the pixel group of the solid-state imaging device is viewed from the Y direction in FIG. 11, the distance between the imaging lenses is short because the width of the selective oxide film is small as shown in FIG. Become. Here, for example, when an image is formed on an adjacent B pixel group by the imaging lens 111 which originally functions to form an image on the G2 pixel group, a phenomenon called smear occurs. Therefore, the R pixel group and the G1 pixel group,
In the horizontal direction (row direction) where the width of the selective oxide film separating the G2 pixel group and the B pixel group is small, the optical center of the imaging lens 111 and the center of each pixel group need to be adjusted with high precision. On the other hand, when the positional relationship between the imaging lens and the pixel group of the solid-state imaging device is viewed from the X direction in FIG.
As shown in (1), since the width of the selective oxide film is large, the distance between the imaging lenses increases. In this case, light to be imaged on a certain pixel group is less likely to be imaged on an adjacent pixel group. Therefore, the R pixel group and the G2 pixel group, and
In the vertical direction (column direction) where the width of the selective oxide film separating the G1 pixel group and the B pixel group is large, the optical center of the imaging lens and the center of each pixel group are adjusted in position compared to the horizontal direction (row direction). May have low accuracy.

Therefore, in the configuration shown in FIG. 11, it is difficult to align the center of the pixel group of the solid-state image sensor with the imaging center of the imaging lens in the horizontal direction (row direction) of the pixel group, and the redundant pixel shown in FIG. It is desirable to provide groups 102 in the horizontal direction.

A circuit (analog logic), GND, etc. may be provided in the LOCOS area in the vertical and horizontal directions.

Further, without forming a selective oxide film for separating the pixel group R and the pixel group G1, and the pixel group G2 and the pixel group B, the pixel group R and the pixel group G1 and the pixel group G2 and the pixel group B are adjacent to each other. Sometimes it is made.

In a second embodiment described later, an example in which a redundant pixel group is provided in the column direction will be described. Similarly, the alignment between the center of the pixel group of the solid-state imaging device and the imaging center of the imaging lens is performed by the pixel group. Is preferably used when the column direction (vertical direction) is difficult.

(Embodiment 2) FIGS. 4 and 5 are schematic views showing the configuration of a solid-state image sensor of a solid-state image sensor according to a second embodiment of the present invention. FIG. 4 is a plan view of the solid-state imaging device of the present embodiment, which shows a so-called four-lens type.
As shown in FIG. 9, the solid-state imaging device is configured by arranging an imaging lens in front of a solid-state imaging device.

Referring to FIG. 4, reference numerals 401 and 402 denote pixel regions in which photoelectric conversion elements for converting incident light into electric signals are two-dimensionally arranged.
403, a pixel group (to be a redundant pixel group) provided in the column direction for adjusting the position of the center of the pixel group of the solid-state imaging device;
Denotes one pixel constituting the pixel groups 401a to 401d. The pixel configuration is the same as that shown in FIG. In the figure, “+” indicates the image formation center of each imaging lens, and “X” indicates the center of each pixel group.

FIG. 5 is a plan view showing a case where the solid-state imaging device of FIG. 4 has a readout circuit.
Reference numerals 401a to 401d denote pixel groups (in the figure, reference numerals 401b to 401d are omitted in the drawing), and 402 denotes a pixel group provided in the column direction for adjusting the position of the center of the pixel group of the solid-state imaging device. ,
Reference numeral 503 denotes a horizontal shift register (HSR) for reading output from the pixel group, 504 denotes a vertical shift register (VSR) for reading output from the pixel group, and 505 denotes an amplifier for amplifying the output read from the pixel group. It is. FIG.
5 is transferred from the photodiode to the floating diffusion region by the vertical shift register (VSR) 504, amplified by the MOS transistor, and then outputs an electric signal to the vertical output line. The signal is read by the (HSR) 503 and amplified by the amplifier 505.

The solid-state imaging device according to the present embodiment includes R, G1,
It has four pixel groups 401a to 401d provided with four filters G2 and B, and makes incident light incident on the pixels 403 constituting each of the pixel groups 401a to 401d by an imaging lens.

When assembling the solid-state imaging device and the imaging lens as shown in FIG. 4, the pixel group 401a and the pixel group 402 provided in the present embodiment are used to align the center of each pixel group with the center of each imaging lens. By setting the effective pixel range, the center of each pixel group and the center of each imaging lens can be easily adjusted, and the efficiency of assembly can be increased. This embodiment is effective for an assembling method in which a vertical deviation is large. Further, the pixels of the pixel group 402 that are not used as effective pixels are also subjected to photoelectric conversion and output electric signals, and the optical output signals are output to a vertical shift register.
504 and the horizontal shift register 503, the signal is amplified by the amplifier 505, and output to the signal processing unit for forming an image. Should not be taken as image information. Then, various processes such as color processing are performed on signals from pixels used as image information, and the processed signals are output to a display, a memory, or the like.

In addition to the CMOS sensor shown in FIG. 3, for example, an amplified MOS imager (AMI), a charge modulation device (CMD),
Any sensor such as a CCD may be used.

(Embodiment 3) FIGS. 6 and 7 are schematic diagrams showing the configuration of a solid-state image sensor of a solid-state image sensor according to a third embodiment of the present invention. FIG. 6 is a plan view of the solid-state imaging device according to the present embodiment, which is a so-called four-lens type.
As shown in FIG. 9, the solid-state imaging device is configured by arranging an imaging lens in front of a solid-state imaging device.

In FIG. 6, reference numerals 601 and 602 denote pixel regions in which photoelectric conversion elements for converting incident light into electric signals are two-dimensionally arranged.
Is a pixel group (which is a redundant pixel group) provided in the row and column directions to adjust the position of the center of the pixel group of the solid-state imaging device, and 603 is one pixel constituting the pixel groups 601a to 601d. The pixel configuration is the same as that shown in FIG. In the figure,
“+” Indicates the image forming center of each imaging lens, and “X” indicates the center of each pixel group.

FIG. 7 is a plan view showing a case where the solid-state imaging device of FIG. 6 has a readout circuit.
Reference numerals 601a to 601d denote pixel groups (in the figure, reference numerals 601b to 601d are omitted), and 602 is provided in the row and column directions to adjust the position of the center of the pixel group of the solid-state imaging device. A pixel group, 703 is a horizontal shift register (HSR) for reading output from the pixel group, 704 is a vertical shift register (VSR) for reading output from the pixel group, and 705 amplifies the output read from the pixel group. For the amplifier.

The vertical shift register (VSR) 704 of FIG.
Then, after being transferred from the photodiode to the floating diffusion region and amplified by the MOS transistor, an electric signal is output to the vertical output line, and the signal is read by the horizontal shift register (HSR) 703 in FIG. , And amplified by the amplifier 705.

The solid-state imaging device according to the present embodiment comprises R, G1,
It has four pixel groups 601a to 601d provided with four filters G2 and B, and the incident light is incident on the pixels 603 constituting each of the pixel groups 601a to 601d by the imaging lens.

When assembling the solid-state imaging device and the imaging lens as shown in FIG. 6, in order to align the center of each pixel group with the center of each imaging lens, the pixel group 601a and the pixel group 602 provided in this embodiment are used. By setting the effective pixel range, the center of each pixel group and the center of each imaging lens can be easily adjusted, and the efficiency of assembly can be increased. This embodiment is effective for an assembling method in which the displacement in the horizontal and vertical directions is large. The pixel group 602
Pixels that are not used as effective pixels among the pixels described above also photoelectrically convert incident light, and the light output signal thereof is output to the vertical shift register 70.
4 and read by the horizontal shift register 703, amplified by the amplifier 705, and output to the signal processing unit for forming an image. Should not be taken as image information. Then, various processes such as color processing are performed on signals from pixels used as image information, and the processed signals are output to a display, a memory, or the like.

In addition to the so-called CMOS sensor shown in FIG. 3, for example, an amplified MOS imager (AMI), a charge modulation device (CMD),
Any sensor such as a CCD may be used.

(Embodiment 4) FIG. 8 is a plan view showing a case where a readout circuit is provided in a solid-state imaging device. In FIG. 8, reference numerals 801 and 802 denote photoelectric conversion elements for converting incident light into electric signals. Is a pixel area in which pixels are arranged two-dimensionally. Specifically, reference numeral 801 denotes a pixel group, and 802 denotes a pixel group provided for adjusting the position of the center of the pixel group of the solid-state imaging device (to be a redundant pixel group). , 803, a horizontal shift register (HSR) for reading output from the pixel group; 804, a vertical shift register (VSR) for reading output from the pixel group;
5 is an amplifier for amplifying the output read from the pixel group, 806 is a horizontal decoder for reading the output from the pixel group provided for adjusting the position of the center of the pixel group in the horizontal direction, and 807 is a vertical decoder. It is a vertical decoder for reading an output from the pixel group provided for adjusting the position of the center of the pixel group in the direction. Vertical shift register (VS
R) 804 and a vertical decoder 807 transfer an electric signal from a photodiode to a floating diffusion and amplify it by a MOS transistor, and then output an electric signal to a vertical output line.
SR) 803 and the horizontal decoder 806, and are amplified by the amplifier 805.

The solid-state imaging device according to the present embodiment includes R, G1,
It has four pixel groups provided with four filters G2 and B, and the incident light is made incident on pixels constituting each pixel group by an imaging lens. When assembling the solid-state imaging device and the imaging lens, an effective pixel range is set from the pixel group 801 provided to align the center of each pixel group with the center of each imaging lens and the pixel group 802 provided in the present embodiment. As a result, the center of each pixel group and the center of each imaging lens can be easily adjusted, and the efficiency of assembly can be increased. This embodiment is effective for an assembling method in which the displacement in the horizontal or vertical direction is large.
Further, the output from the pixel group 801 is read out by the horizontal shift register and the vertical shift register, and only the pixels used as effective pixels in the pixel group 802 are read out by the horizontal decoder and the vertical decoder. Can be shortened. After that, a process for forming an image is performed in the signal processing unit. Then, the processed signal is output to a display, a memory, or the like.

When a pixel group such as a pixel group 801 provided to align the center of each pixel group with the center of each imaging lens is provided in the row direction, the center of each pixel group is aligned with the center of each imaging lens. By setting the effective pixel range from the pixel group 801 and the pixel group such as the pixel group 802 provided in the present embodiment, it is possible to easily align the center of each pixel group with the center of each imaging lens, The efficiency of assembly can be increased. In the present embodiment, when a pixel group such as the pixel group 802 is provided in the horizontal direction, it is effective for an assembling method in which the horizontal shift is large, and the pixel group in the vertical direction is
When a pixel group like 802 is provided, it is effective for an assembling method in which a vertical shift is large. In the case where a pixel group such as the pixel group 802 is provided in the horizontal direction and the vertical direction, it is more effective for an assembling method in which the displacement is large in the horizontal direction and the vertical direction.

In addition to the so-called CMOS sensor shown in FIG. 3, for example, an amplified MOS imager (AMI), a charge modulation device (CMD),
Any sensor such as a CCD may be used.

An embodiment in which the solid-state imaging device of the present invention is applied to a still camera will be described in detail with reference to FIG.

FIG. 10 is a block diagram showing a case where the solid-state imaging device of the present invention is applied to a "still video camera".

In FIG. 10, reference numeral 1 denotes a barrier which serves both as protection of the lens and as a main switch, 2 as a lens for forming an optical image of a subject on the solid-state image pickup device 4, and 3 as an aperture for varying the amount of light passing through the lens 2. Numeral 4 denotes a solid-state image sensor for capturing a subject formed by the lens 2 as an image signal. The solid-state imaging device 4 is a compound-eye solid-state imaging device, and includes four pixel groups provided with the above-described R, G1, G2, and B color filters. The lens 2 is provided corresponding to each pixel group. Reference numeral 6 denotes an A / D converter for performing analog-to-digital conversion of an image signal output from the solid-state imaging device 4, and reference numeral 7 performs various corrections on the image data output from the A / D converter 6 and compresses the data. A signal processing unit 8 is a timing generation unit that outputs various timing signals to the solid-state imaging device 4, the imaging signal processing circuit 5, the A / D converter 6, and the signal processing unit 7. An overall control / arithmetic unit for controlling, a memory unit 10 for temporarily storing image data, an interface unit 11 for recording or reading out on a recording medium, and a reference numeral 12 for recording or reading out image data A detachable recording medium 13 such as a semiconductor memory is an interface unit for communicating with an external computer or the like.

Next, the operation of the still video camera at the time of shooting in the above configuration will be described.

When the barrier 1 is opened, the main power is turned on, then the power of the control system is turned on.
The power of the imaging system circuit such as the / D converter 6 is turned on. Then, in order to control the exposure amount, the overall control / arithmetic unit 9 opens the aperture 3 and the signal output from the solid-state imaging device 4 is converted by the A / D converter 6 and then sent to the signal processing unit 7. Is entered.

In the signal processing section 7, for example, as described in the first embodiment, the pixels which are not used as effective pixels among the pixels of the pixel group 102 also photoelectrically convert incident light and output electric signals. The optical output signal is output to the vertical shift register 204
And read out by the horizontal shift register 203, amplified by the amplifier 205, and output to the signal processing unit 7,
Signals from pixels that are not used as image information are processed by the signal processing unit 7 so that they are not read as image information. Then, various processes such as color processing are performed on signals from pixels used as image information.
The overall control / arithmetic unit 9 calculates the exposure based on the data.

The brightness is determined based on the result of the photometry, and the overall control / arithmetic unit 9 controls the aperture according to the result.

Next, based on the signal output from the solid-state imaging device 4, high-frequency components are extracted, and the distance to the subject is calculated by the overall control / calculation unit 9. Thereafter, the lens is driven to determine whether or not the lens is in focus. When it is determined that the lens is not focused, the lens is driven again to perform distance measurement. Then, after the focus is confirmed, the main exposure starts.

When the exposure is completed, the image signal output from the solid-state imaging device 4 is A / D converted by the A / D converter 6, and
The data is written into the memory unit by the overall control / arithmetic unit 9 through the signal processing unit 7.

After that, the data stored in the memory unit 10 is transferred to the recording medium control I / O under the control of the overall control / arithmetic unit 9.
Removable recording medium 1 such as a semiconductor memory passing through F section 11
2 is recorded.

Further, the image may be processed by inputting it directly to a computer or the like through the external I / F unit 13.

[0062]

As described above, according to the present invention, in a solid-state imaging device having a pixel group in which photoelectric conversion elements for converting incident light into electric signals are two-dimensionally arranged, redundant pixels are provided in the pixel group. This makes it possible to easily align the center of the pixel group with the center of each imaging lens during assembly,
High-precision assembly and the efficiency of assembly can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic plan view showing a first embodiment according to the present invention.

FIG. 2 is a schematic plan view showing a first embodiment according to the present invention.

FIG. 3 is a schematic plan view showing a configuration of a pixel used in first to third embodiments according to the present invention.

FIG. 4 is a schematic plan view showing a second embodiment according to the present invention.

FIG. 5 is a schematic plan view showing a second embodiment according to the present invention.

FIG. 6 is a schematic plan view showing a third embodiment according to the present invention.

FIG. 7 is a schematic plan view showing a third embodiment according to the present invention.

FIG. 8 is a schematic plan view showing a fourth embodiment according to the present invention.

FIG. 9 is a schematic plan view showing a solid-state imaging device.

FIG. 10 is a block diagram showing a case where the solid-state imaging device of the present invention is applied to a still video camera.

FIG. 11 is a plan view illustrating a configuration of a solid-state imaging device.

FIG. 12 is a cross-sectional view illustrating an arrangement of a pixel group and an imaging lens of a solid-state imaging device.

FIG. 13 is a cross-sectional view illustrating an arrangement of a pixel group and an imaging lens of the solid-state imaging device.

[Explanation of symbols]

101a, 101b, 101c, 101d, 102,201,202,401a, 401b, 401c, 401
d, 402,501,502,601a, 601b, 601c, 601d, 602,701,702,801,
802,902a, 902b, 902c, 902d Pixel group 103,403,603 pixel 203,503,703,803 Horizontal shift register 204,504,704,804 Vertical shift register 205,505,705,805 Amplifier 301 Photodiode 302,303,304 MOS transistor 305 Vertical output line 806 Horizontal decoder 807 Vertical decoder 901 Imaging lens 903 Solid state image sensor

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) H04N 9/07 H01L 27/14 A F term (reference) 4M118 AA10 AB01 BA10 BA14 CA02 FA01 FA06 GC08 GC09 GD02 5C022 AA13 AB45 AC42 AC54 5C024 BX01 CX38 CY32 CY47 CY49 DX01 EX18 EX42 EX52 GX03 GY31 HX17 HX40 HX41 5C065 AA01 AA03 BB26 BB42 DD01 EE05 EE06 EE12 GG30 GG35

Claims (13)

[Claims] 1. A pixel region in which pixels having photoelectric conversion elements for converting incident light into electric signals are two-dimensionally arranged; an imaging optical system for forming an image of the incident light on the pixel region; Based on the positional relationship between the image optical system and the pixel area,
A signal processing unit that outputs a signal from a pixel in a predetermined area smaller than the pixel area as image information. 2. The solid-state imaging device according to claim 1, wherein the signal processing unit outputs the image information to a display unit and / or a memory. 3. A first pixel group in which pixels each having a photoelectric conversion element for converting incident light into an electric signal are two-dimensionally arranged, and an imaging for imaging the incident light on the first pixel group. An optical system, and a second pixel group including a plurality of pixels around the first pixel group, which is used when an image forming center of the image forming optical system deviates from a center position of the pixel group. A solid-state imaging device comprising: 4. The solid-state imaging device according to claim 3, wherein a plurality of the first pixel groups are arranged in a row direction and a column direction, and the first pixel groups are arranged between the first pixel groups in the row direction and the first pixels in the column direction. The width between the pixel groups is different, and the second pixel group is arranged such that, in one of the row direction and the column direction of the first pixel group, the width of the plurality of arranged first pixel groups is narrow. A solid-state imaging device characterized by being provided. 5. A solid-state imaging device including a plurality of pixel groups in which pixels each having a photoelectric conversion element for converting incident light into an electric signal are two-dimensionally arranged, the pixel groups being arranged in a row direction or a column direction of the pixel group. A solid-state imaging device comprising the same redundant pixel as an effective pixel. 6. A solid-state image pickup device comprising a plurality of pixel groups in which pixels having photoelectric conversion elements for converting incident light into electric signals are two-dimensionally arranged. In a solid-state image pickup device, effective pixels are arranged in a row direction and a column direction of the plurality of pixel groups. A solid-state imaging device comprising the same redundant pixel. 7. A solid-state imaging device having an imaging optical system provided on the solid-state imaging device according to claim 5 or 6, wherein an imaging center position of the imaging optical system and a center of the pixel group. A solid-state imaging device using an output from the redundant pixel when the position is shifted. 8. A plurality of pixels each having a two-dimensional array of pixels having a photoelectric conversion element for converting incident light into an electric signal, and an effective pixel group provided in a row direction and / or a column direction of the pixel group. A solid-state imaging device comprising: a redundant pixel that is the same as a pixel; first reading means for reading a signal from each pixel of the plurality of pixel groups; and second reading means for reading a signal from the redundant pixel. 9. The solid-state imaging device according to claim 8, further comprising: an imaging optical system provided on the solid-state imaging device, wherein the second readout unit is configured to control an imaging center of the imaging optical system. A solid-state imaging device which is used when a position deviates from a center position of the pixel group. 10. A solid-state imaging device in which an imaging optical system is provided on a solid-state imaging device having a plurality of pixel groups in which pixels having photoelectric conversion elements for converting incident light into electric signals are two-dimensionally arranged, In either the row direction or the column direction of the pixel group,
A solid-state imaging device, wherein the same redundant pixel as an effective pixel of the pixel group is provided in a direction in which it is difficult to match an image forming center position of the image forming optical system with a center position of the pixel group. 11. A pixel group in which pixels each having a photoelectric conversion element for converting incident light into an electric signal are two-dimensionally arranged in a row direction and a column direction, and a plurality of pixel groups are arranged in a row direction and a column direction. A solid-state imaging device having a different width between the pixel groups, an imaging optical system that makes light incident on the pixel group, and one of a row direction and a column direction of the pixel group.
A solid-state imaging device, wherein the same redundant pixels as the effective pixels of the pixel group are provided in a direction in which the width between the pixel groups is narrow. 12. The solid-state imaging device according to claim 5, an optical system that forms an image of light on said solid-state imaging device, and an output signal from said solid-state imaging device. An image pickup system comprising: 13. An imaging system, comprising: the solid-state imaging device according to claim 3, 4, and a signal processing circuit that processes an output signal from the solid-state imaging device. .