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HUP0004504A3 - Semiconductor component - Google Patents

Semiconductor component

Info

Publication number
HUP0004504A3
HUP0004504A3 HU0004504A HUP0004504A HUP0004504A3 HU P0004504 A3 HUP0004504 A3 HU P0004504A3 HU 0004504 A HU0004504 A HU 0004504A HU P0004504 A HUP0004504 A HU P0004504A HU P0004504 A3 HUP0004504 A3 HU P0004504A3
Authority
HU
Hungary
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Application number
HU0004504A
Other languages
English (en)
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of HUP0004504A2 publication Critical patent/HUP0004504A2/hu
Publication of HUP0004504A3 publication Critical patent/HUP0004504A3/hu

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/415—Insulated-gate bipolar transistors [IGBT] having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
HU0004504A 1997-11-18 1998-11-16 Semiconductor component HUP0004504A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19750992A DE19750992A1 (de) 1997-11-18 1997-11-18 Halbleiterbauelement
PCT/DE1998/003363 WO1999026295A1 (de) 1997-11-18 1998-11-16 Hochspannungs-halbleiterbauelement

Publications (2)

Publication Number Publication Date
HUP0004504A2 HUP0004504A2 (hu) 2001-04-28
HUP0004504A3 true HUP0004504A3 (en) 2002-11-28

Family

ID=7849035

Family Applications (1)

Application Number Title Priority Date Filing Date
HU0004504A HUP0004504A3 (en) 1997-11-18 1998-11-16 Semiconductor component

Country Status (8)

Country Link
US (1) US6794689B1 (hu)
EP (1) EP1038321A1 (hu)
JP (1) JP4718004B2 (hu)
KR (1) KR100585030B1 (hu)
BR (1) BR9814661A (hu)
DE (1) DE19750992A1 (hu)
HU (1) HUP0004504A3 (hu)
WO (1) WO1999026295A1 (hu)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10221082A1 (de) * 2002-05-11 2003-11-20 Bosch Gmbh Robert Halbleiterbauelement
JP2005109163A (ja) * 2003-09-30 2005-04-21 Nec Electronics Corp 半導体素子
CN109244068B (zh) * 2018-08-29 2020-11-03 南京邮电大学 一种ligbt型高压esd保护器件
CN111816699B (zh) * 2020-08-31 2021-05-14 电子科技大学 一种具有自适应性的soi ligbt器件

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
GB2173037A (en) * 1985-03-29 1986-10-01 Philips Electronic Associated Semiconductor devices employing conductivity modulation
JPH0716009B2 (ja) * 1988-12-02 1995-02-22 株式会社日立製作所 横型絶縁ゲートバイポーラトランジスタ
JPH02275675A (ja) * 1988-12-29 1990-11-09 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
DE4020478C2 (de) * 1989-07-04 2001-03-29 Fuji Electric Co Ltd Mos Halbleitervorrichtung
EP0434234B1 (en) * 1989-12-22 1995-05-24 AT&T Corp. MOS devices having improved electrical match
JP3099917B2 (ja) * 1992-03-09 2000-10-16 日本電気株式会社 電界効果トランジスタ
US5395776A (en) * 1993-05-12 1995-03-07 At&T Corp. Method of making a rugged DMOS device
JP3085037B2 (ja) * 1993-08-18 2000-09-04 富士電機株式会社 絶縁ゲートバイポーラトランジスタ
JP3243902B2 (ja) 1993-09-17 2002-01-07 株式会社日立製作所 半導体装置
JP3106844B2 (ja) * 1994-03-24 2000-11-06 富士電機株式会社 横型絶縁ゲート型バイポーラトランジスタ
JPH0823091A (ja) * 1994-07-06 1996-01-23 Nec Kansai Ltd 電界効果トランジスタ及びその製造方法
US5569982A (en) * 1995-05-17 1996-10-29 International Rectifier Corporation Clamping circuit for IGBT in spark plug ignition system
JP3519173B2 (ja) * 1995-06-14 2004-04-12 富士電機デバイステクノロジー株式会社 横型半導体装置およびその製造方法
US5592124A (en) * 1995-06-26 1997-01-07 Burr-Brown Corporation Integrated photodiode/transimpedance amplifier
JP3522983B2 (ja) * 1995-08-24 2004-04-26 株式会社東芝 横型ｉｇｂｔ

Also Published As

Publication number Publication date
KR100585030B1 (ko) 2006-06-01
WO1999026295A1 (de) 1999-05-27
BR9814661A (pt) 2000-10-03
EP1038321A1 (de) 2000-09-27
JP4718004B2 (ja) 2011-07-06
KR20010032187A (ko) 2001-04-16
DE19750992A1 (de) 1999-06-02
HUP0004504A2 (hu) 2001-04-28
JP2001523894A (ja) 2001-11-27
US6794689B1 (en) 2004-09-21

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Legal Events

Date Code Title Description
FD9A Lapse of provisional protection due to non-payment of fees