GB2315920B - Semiconductor arrangement - Google Patents

Semiconductor arrangement

Info

Publication number: GB2315920B
Authority: GB; United Kingdom
Prior art keywords: semiconductor arrangement; semiconductor; arrangement
Prior art date: 1996-07-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

GB9715319A

Other versions

GB2315920A (en

GB9715319D0 (en

Inventor

Ulrich Bommer

Jochen Gerner

Klaus Gillessen

Albert Marshall

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Vishay Semiconductor GmbH

Aumovio Microelectronic GmbH

Original Assignee

Vishay Semiconductor GmbH

Temic Telefunken Microelectronic GmbH

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1996-07-30

Filing date

1997-07-21

Publication date

2000-12-06

1997-07-21 Application filed by Vishay Semiconductor GmbH, Temic Telefunken Microelectronic GmbH filed Critical Vishay Semiconductor GmbH

1997-09-24 Publication of GB9715319D0 publication Critical patent/GB9715319D0/en

1998-02-11 Publication of GB2315920A publication Critical patent/GB2315920A/en

2000-12-06 Application granted granted Critical

2000-12-06 Publication of GB2315920B publication Critical patent/GB2315920B/en

2017-07-21 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions

GB9715319A 1996-07-30 1997-07-21 Semiconductor arrangement Expired - Lifetime GB2315920B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE19630689A DE19630689C1 (en)	1996-07-30	1996-07-30	Semiconductor device and manufacturing method

Publications (3)

Publication Number	Publication Date
GB9715319D0 GB9715319D0 (en)	1997-09-24
GB2315920A GB2315920A (en)	1998-02-11
GB2315920B true GB2315920B (en)	2000-12-06

Family

ID=7801249

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB9715319A Expired - Lifetime GB2315920B (en)	1996-07-30	1997-07-21	Semiconductor arrangement

Country Status (4)

Country	Link
JP (1)	JPH10107314A (en)
DE (1)	DE19630689C1 (en)
GB (1)	GB2315920B (en)
TW (1)	TW408507B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE19962037A1 (en) *	1999-12-22	2001-07-12	Vishay Semiconductor Gmbh	Illuminating diode used in wireless data transmission has a light-producing layer sequence made of gallium aluminum arsenide and a neighboring p-conducting semiconductor layer
DE10032531A1 (en) *	2000-07-05	2002-01-24	Osram Opto Semiconductors Gmbh	emitting diode
DE10039945B4 (en) *	2000-08-16	2006-07-13	Vishay Semiconductor Gmbh	A method of fabricating a dual heterostructure GaAIAs light emitting semiconductor device and corresponding semiconductor device
DE10056476B4 (en) *	2000-11-15	2012-05-03	Osram Opto Semiconductors Gmbh	Radiation-emitting semiconductor body and method for its production
DE10329079B4 (en) *	2003-06-27	2014-10-23	Osram Opto Semiconductors Gmbh	Radiation-emitting semiconductor component

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0143957A1 (en) *	1983-10-28	1985-06-12	Siemens Aktiengesellschaft	Process for making A3B5 light-emitting diodes
EP0317228A2 (en) *	1987-11-13	1989-05-24	Mitsubishi Kasei Polytec Company	Epitaxial wafer
US5525539A (en) *	1994-09-27	1996-06-11	Opto Diode Corporation	Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0356027A1 (en) *	1988-07-29	1990-02-28	Kuraray Co., Ltd.	Near-infrared ray absorbent resin composition and method for production thereof

1996
- 1996-07-30 DE DE19630689A patent/DE19630689C1/en not_active Expired - Lifetime
1997
- 1997-07-15 TW TW086109937A patent/TW408507B/en not_active IP Right Cessation
- 1997-07-21 GB GB9715319A patent/GB2315920B/en not_active Expired - Lifetime
- 1997-07-29 JP JP23531697A patent/JPH10107314A/en active Pending

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0143957A1 (en) *	1983-10-28	1985-06-12	Siemens Aktiengesellschaft	Process for making A3B5 light-emitting diodes
US4606780A (en) *	1983-10-28	1986-08-19	Siemens Aktiengesellschaft	Method for the manufacture of A3 B5 light-emitting diodes
EP0317228A2 (en) *	1987-11-13	1989-05-24	Mitsubishi Kasei Polytec Company	Epitaxial wafer
US5525539A (en) *	1994-09-27	1996-06-11	Opto Diode Corporation	Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength

Also Published As

Publication number	Publication date
DE19630689C1 (en)	1998-01-15
TW408507B (en)	2000-10-11
JPH10107314A (en)	1998-04-24
GB2315920A (en)	1998-02-11
GB9715319D0 (en)	1997-09-24

Publication	Publication Date	Title
GB2309336B (en)	2001-05-23	Semiconductor device
GB2316208B (en)	2001-04-11	Semiconductor device
GB2309589B (en)	2001-01-03	Semiconductor device
GB2316533B (en)	1999-05-26	Semiconductor device
SG63690A1 (en)	1999-03-30	Semiconductor device
GB2310758B (en)	2000-12-20	Semiconductor device
SG54501A1 (en)	1998-11-16	Semiconductor device
GB9713846D0 (en)	1997-09-03	Semiconductor device
EP0855719A4 (en)	1998-10-28	Semiconductor device
GB2315920B (en)	2000-12-06	Semiconductor arrangement
SG45513A1 (en)	1998-01-16	Leadframe
SG68622A1 (en)	1999-11-16	Semiconductor device
GB2355584B (en)	2001-05-30	Semiconductor decice
GB2310317B (en)	1998-03-25	Semiconductor device
GB2355095B (en)	2001-05-23	Semiconductor circuitry
GB9703275D0 (en)	1997-04-09	Semiconductor devices
GB9613406D0 (en)	1996-08-28	Semiconductor devices
GB9607060D0 (en)	1996-06-05	Semiconductor devices
GB9611219D0 (en)	1996-07-31	Semiconductor devices
GB9601448D0 (en)	1996-03-27	Semiconductor devices
GB2314673B (en)	1998-12-30	Semiconductor device
GB9610110D0 (en)	1996-07-24	Semiconductor integrated assemblies
GB9612680D0 (en)	1996-08-21	Radiation-emissive semiconductor materials
TW307268U (en)	1997-06-01	Improved semiconductor device
GB9609834D0 (en)	1996-07-17	Semiconductor device

Legal Events

Date	Code	Title	Description
1999-07-07	732E	Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
2017-08-09	PE20	Patent expired after termination of 20 years	Expiry date: 20170720